High-density plasma enhanced chemical vapor deposition chamber

Abstract

The present disclosure relates to methods and apparatus for showerheads for deposition chambers. In one embodiment, a showerhead for a plasma deposition chamber is provided, the showerhead comprising: a plurality of perforated tiles, each perforated tile coupled to one or more of a plurality of support members; and a plurality of inductive couplers located within the showerhead, wherein an inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated tiles, wherein the support members provide precursor gas to a volume formed between the inductive couplers and the perforated tiles.

Description

[0001] background

[0002] field

[0003] Embodiments of the present disclosure generally relate to an apparatus for processing large area substrates. More particularly, embodiments of the present disclosure relate to a chemical vapor deposition system for device fabrication.

[0004] Description of related technologies

[0005] In the manufacture of solar panels or flat panel displays, a number of processes are used to deposit thin films on substrates such as semiconductor substrates, solar panel substrates, and liquid crystal display (LCD) and / or organic light emitting diode (OLED) substrates to form electronic devices on the substrates. Deposition is typically accomplished by introducing precursor gases into a vacuum chamber having a substrate on a temperature-controlled substrate support. The precursor gases are typically directed through a gas distribution plate located near the top of the vacuum chamber. The precursor gases in the vacuum chamber can be excited (e.g., activated) into a plasma by applying radio frequency (RF) power from one or more RF sources coupled to the chamber to a conductive showerhead disposed in the chamber. The activated gases react to form a layer of material on the surface of the substrate, which is located on the temperature-controlled substrate support.

[0006] Today, substrates used to form electronic devices often exceed 1 square meter in surface area. Achieving uniform film thickness across these substrates is difficult. As substrate size increases, achieving uniform film thickness becomes even more challenging. Traditionally, plasma formation in conventional chambers to ionize gas atoms and form deposition gas radicals is useful for depositing film layers on substrates of this size using capacitively coupled electrode arrangements. Recently, the benefits of inductively coupled plasma arrangements, previously used for deposition on circular substrates or wafers, are being explored for use in deposition processes for these large substrates. However, inductive coupling utilizes dielectric materials as structural support components, and these materials lack the structural strength to withstand the structural loads (caused by atmospheric pressure on one side of the material against the large-area structural portion of the chamber) and the vacuum pressure conditions on the other side (as used in conventional chambers for these large substrates). Consequently, inductively coupled plasma systems have been developed for large-area substrate plasma processes. However, process uniformity, such as deposition thickness uniformity across large substrates, has been unsatisfactory.

[0007] Therefore, there is a need for an inductively coupled plasma source for use on large area substrates that is configured to improve film thickness uniformity across the substrate deposition surface.

[0008] Overview

[0009] Embodiments of the present disclosure include methods and apparatus for a showerhead, and a plasma deposition chamber having a showerhead, capable of forming one or more films on large area substrates.

[0010] In one embodiment, a showerhead for a plasma deposition chamber is provided, the showerhead comprising: a plurality of perforated tiles, each perforated tile coupled to one or more of a plurality of support members; and a plurality of inductive couplers within the showerhead, wherein an inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated tiles, wherein the support members provide precursor gas to a volume formed between the inductive couplers and the perforated tiles.

[0011] In another embodiment, a plasma deposition chamber is provided, comprising: a showerhead having a plurality of perforated tiles; an inductive coupler corresponding to one or more of the plurality of perforated tiles; and a plurality of support members for supporting each of the perforated tiles, wherein one or more of the support members provides a precursor gas to a volume formed between the inductive couplers and the perforated tiles.

[0012] In another embodiment, a plasma deposition chamber is provided, comprising: a showerhead having a plurality of perforated tiles, each perforated tile coupled to one or more of a plurality of support members; a plurality of dielectric plates, one of the plurality of dielectric plates corresponding to one of the plurality of perforated tiles; and a plurality of inductive couplers, wherein one of the plurality of inductive couplers corresponds to one of the plurality of dielectric plates, wherein the support members provide precursor gas to a volume formed between the inductive couplers and the perforated tiles.

[0013] In another embodiment, a method for depositing a film on a substrate is disclosed, the method comprising: flowing a precursor gas to a plurality of gas volumes of a showerhead, each of the gas volumes comprising a perforated brick and an inductive coupler electrically connected to the corresponding gas volume; and varying the flow rate of the precursor gas into each of the gas volumes.

[0014] BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order that the manner in which the above-described features of the present disclosure may be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to its embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of its scope, as the disclosure may admit to other equally effective embodiments.

[0016] Figure 1 is a cross-sectional side view illustrating an exemplary processing chamber according to one embodiment of the present disclosure.

[0017] Figure 2A yes Figure 1 An enlarged view of a portion of the cover assembly.

[0018] Figure 2B is a top plan view of one embodiment of a coil.

[0019] Figure 3A is a bottom plan view of one embodiment of a face plate of a showerhead.

[0020] Figure 3B It is a partial bottom plan view of another embodiment of a face plate of a showerhead.

[0021] Figure 4 is a schematic bottom plan view showing another embodiment of flow control of a spray head.

[0022] Figure 5 is a cross-sectional plan view of a support frame for a sprinkler head.

[0023] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.

[0024] Specific instructions

[0025] Embodiments of the present disclosure include a processing system operable to deposit multiple layers on a large area substrate. As used herein, a large area substrate is a large area substrate, for example, a substrate having a surface area typically about 1 square meter or greater. However, the substrate is not limited to any particular size or shape. In one aspect, the term "substrate" represents any polygonal, square, rectangular, curved, or other non-circular workpiece, such as a glass or polymer substrate used in the manufacture of a flat panel display.

[0026] Here, the showerhead is configured to flow gas through the showerhead and into the processing volume of the chamber in several independently controlled zones to improve processing uniformity of substrate surfaces exposed to the gas in the processing zones. Furthermore, each zone is configured with a gas chamber, one or more perforated plates, and a coil or portion of a coil, the one or more perforated plates being positioned between the gas chamber and the processing volume of the chamber, with the coil or portion of the coil being dedicated to a particular zone or individual perforated plates. The gas chamber is formed between the dielectric window, the perforated plates, and the surrounding structure. Each gas chamber is configured to allow process gas to flow into the chamber and be distributed to produce a relatively uniform flow rate, or in some cases, a customized flow rate, of gas through the perforated plates and into the processing volume. The thickness of the gas chamber is preferably less than twice the thickness of the dark space of the plasma, which is formed within the gas chamber from the process gas at the gas chamber pressure. An inductive coupler, preferably in the shape of a coil, is located behind the dielectric window and inductively couples energy through the dielectric window, gas chamber, and perforated plates to impact and support the plasma in the processing volume. In addition, additional process gas flow is provided in the areas between adjacent perforated plates. The flow of process gas in each zone and through the areas between the perforated plates is controlled to produce a uniform or customized gas flow to achieve the desired process results on the substrate.

[0027] Embodiments of the present disclosure include high density plasma chemical vapor deposition (HDP CVD) process chambers operable to form one or more layers or films on a substrate. The process chambers as disclosed herein are suitable for delivering excited species of a precursor gas generated in a plasma. The plasma can be generated by inductively coupling energy into the gas under vacuum. The embodiments disclosed herein may be suitable for use in a chamber available from AKT USA, Inc., a subsidiary of Applied Materials, Inc. in Santa Clara, California. It should be understood that the embodiments discussed herein may also be practiced in chambers available from other manufacturers.

[0028] Figure 1 1 is a cross-sectional side view of an illustrative processing chamber 100 according to one embodiment of the present disclosure. An exemplary substrate 102 is shown within a chamber body 104. The processing chamber 100 also includes a lid assembly 106 and a pedestal or substrate support assembly 108. The lid assembly 106 is disposed at an upper end of the chamber body 104, and the substrate support assembly 108 is at least partially disposed within the chamber body 104. The substrate support assembly 108 is coupled to a shaft 110. The shaft 110 is coupled to a drive 112, which moves the substrate support assembly 108 vertically (in the Z direction). Figure 1, the substrate support assembly 108 of the processing chamber 100 is shown in a processing position. However, the substrate support assembly 108 can be lowered in the Z direction to a position adjacent to the transfer port 114. When lowered, lift pins 116 movably disposed in the substrate support assembly 108 contact the bottom 118 of the chamber body 104. When the lift pins 116 contact the bottom 118, the lift pins 116 can no longer move downward with the substrate support assembly 108, and as the substrate receiving surface 120 of the substrate support assembly 108 moves downward from the lift pins 116, the lift pins 116 hold the substrate 102 in a fixed position. Thereafter, an end effector or robotic blade (not shown) is passed through the transfer port 114 and inserted between the substrate 102 and the substrate receiving surface 120 to transfer the substrate 102 out of the chamber body 104.

[0029] The lid assembly 106 can include a backing plate 122 disposed on the chamber body 104. The lid assembly 106 also includes a gas distribution assembly or showerhead 124. The showerhead 124 delivers process gases from a gas source to a processing region 126 between the showerhead 124 and the substrate 102. The showerhead 124 is also coupled to a clean gas source that provides a clean gas, such as a fluorine-containing gas, to the processing region 126.

[0030] The showerhead 124 also serves as a plasma source 128. To function as the plasma source 128, the showerhead 124 includes one or more inductively coupled plasma generating components or coils 130. Each of the one or more coils 130 can be a single coil 130, two coils 130, or more than two coils 130, as briefly described below. Each of the one or more coils 130 is coupled across a power supply and a ground 133. The showerhead 124 also includes a faceplate 132 comprising a plurality of discrete perforated tiles 134. The power supply includes matching circuitry or tuning capabilities for adjusting the electrical characteristics of the coils 130.

[0031] Each perforated tile 134 is supported by a plurality of support members 136. Each of the one or more coils 130 or portions of the one or more coils 130 is located on or above a corresponding dielectric plate 138. Figure 2AAn example of a coil 130 disposed above a dielectric plate 138 within the lid assembly 106 is more clearly shown in FIG. A plurality of gas volumes 140 are defined by the surfaces of the dielectric plate 138, the perforated tiles 134, and the support member 136. Each of the one or more coils 130 is configured to generate an electromagnetic field that excites a process gas into a plasma in a processing region 126 below the gas volume 140 as the gas flows through adjacent perforated tiles into the gas volume 140 and into the chamber volume below the gas volume 140. Process gas is provided from a gas source to each gas volume 140 through conduits in the support member 136. The volume or flow rate of gas entering and exiting the showerhead 124 is controlled in different zones of the showerhead 124. Zone control of the process gas is provided by a plurality of flow controllers, such as Figure 1 140 . For example, the flow rate of gas flowing to the periphery or outer region of the showerhead 124 is controlled by the flow controllers 142 and 143, while the flow rate of gas flowing to the central region of the showerhead 124 is controlled by the flow controller 144. When it is necessary to clean the chamber, a cleaning gas from a cleaning gas source flows to each gas volume 140 and from there into the processing volume, where the cleaning gas is excited into ions, radicals, or both ions and radicals. To clean chamber components, the excited cleaning gas flows through the perforated bricks 134 and into the processing region 126.

[0032] Figure 2A yes Figure 1 106 . As described above, the precursor gas is passed from the gas source to the gas volume 140 via the first conduits 200 formed through the backing plate 122. Each first conduit 200 is coupled to a second conduit 205 formed in the support member 136. The second conduits 205 provide the precursor gas to the gas volume 140 at the opening 210. Some second conduits 205 provide gas to two adjacent gas volumes 140 ( Figure 2A One of the second conduits 205 is shown in dashed lines). Figure 4 The flow of gas into the representative gas volume 140 is more clearly shown. The second conduit 205 may include a flow restrictor 215 to control the flow to the gas volume 140. To control the flow of gas through the flow restrictors 215, the size of the flow restrictors 215 may be varied. For example, each flow restrictor 215 may include an orifice of a specific size (e.g., diameter) for controlling the flow rate. Furthermore, each flow restrictor 215 may be modified as needed to provide a larger orifice size or a smaller orifice size as needed to control the flow rate through the flow restrictor.

[0033] like Figure 2AAs shown in FIG, the perforated tile 134 includes a plurality of openings 220 extending therethrough. Because the diameter of the openings 220 extends between the gas volume 140 and the processing region 126, each of the plurality of openings 220 allows gas to flow from the gas volume 140 into the processing region 126 at a desired flow rate. To balance the gas flow through each opening 220 in one or more perforated tiles 134, the openings 220 and / or rows and columns of openings 220 may be of different sizes and / or spaced differently. Alternatively, the gas flow rate from each opening 220 may be non-uniform, depending on the desired gas flow characteristics.

[0034] In addition to the perforated tiles 134, the faceplate 132 includes a plurality of perforated strips 225 extending along the sides of the perforated tiles 134. Each of the plurality of perforated strips 225 includes a plurality of openings 230 that allow gas to flow from the second conduit 205 into the second plenum 235 and then into the processing region 126 to ignite the gas into a plasma.

[0035] The support members 136 are coupled to the backing plate 122 by fasteners 240, such as bolts or screws. Each support member 136 supports the perforated tiles 134 using an interface portion 245. Each interface portion 245 can be a ledge or partition that supports a portion or edge of the perimeter of the perforated tiles 134. In some embodiments, the interface portion 245 includes a removable strip 250. The removable strip 250 is fastened to the support member 136 by fasteners (not shown), such as bolts or screws. A portion of the interface portion 245 is L-shaped, while another portion of the interface portion 245 is T-shaped. Each interface portion 245 also supports the perimeter or edge of the perforated strip 225. The gas volume 140 is sealed using one or more seals 265. For example, the seal 265 is an elastomeric material, such as an O-ring seal or a polytetrafluoroethylene (PTFE) joint sealant material. One or more seals 265 may be provided between the support member 136 and the perforated tiles 134 and the perforated strips 225. The removable strips 250 are used to support one or both of the perforated strips 225 and the perforated tiles 134 on the support member 136. The removable strips 250 may be removed as needed to replace one or both of the perforated strips 225 and the perforated tiles 134.

[0036] In addition, each support member 136 utilizes a spacer 270 extending therefrom (at Figure 2A14 (shown in FIG. 14 ) to support the dielectric plates 138. In embodiments of the showerhead 124 / plasma source 128, the dielectric plates 138 have a relatively small lateral surface area (in the XY plane) compared to the surface area of ​​the entire showerhead 124 / plasma source 128. Spacers 270 are utilized to support the dielectric plates 138. The reduced lateral surface area of ​​the plurality of dielectric plates 138 allows the use of the dielectric material as a physical barrier between the plasma and processing region 126 in the vacuum environment and gas volume 140 and the atmospheric environment where the adjacent coils 130 are typically located without imposing significant stresses in the dielectric material due to the large area supporting the atmospheric pressure load.

[0037] Seal 265 is used to seal volume 275 (at atmospheric or near atmospheric pressure) from gas volume 140 (at subatmospheric pressure in the millitorr or less range during processing). Interface member 280 is shown extending from support member 136, and fasteners 285 are used to secure (i.e., urge) dielectric plate 138 relative to seal 265 and spacer 270. Seal 265 can also be used to seal the space between the outside perimeter of perforated plate 134 and support member 136.

[0038] The material used for the showerhead 124 / plasma source 128 is selected based on one or more of electrical properties, strength, and chemical stability. The coil 130 is made of a conductive material. The backing plate 122 and the support member 136 are made of a material capable of supporting the weight of the supported component and the atmospheric pressure load, which may include a metal or other similar material. The backing plate 122 and the support member 136 can be made of a non-magnetic material (e.g., a non-paramagnetic or non-ferromagnetic material), such as an aluminum material. The removable strip 250 is also formed of a non-magnetic material, such as a metal material, such as aluminum, or a ceramic material (e.g., alumina (Al2O3) or sapphire (Al2O3)). The perforated strip 225 and the perforated brick 134 are made of a ceramic material, such as quartz, alumina, or other similar materials. The dielectric plate 138 is made of quartz, alumina, or sapphire material.

[0039] In some embodiments, the support member 136 includes one or more coolant channels 255 therein. The one or more coolant channels 255 are fluidly coupled to a fluid source 260 that is configured to provide a coolant medium to the coolant channels 255.

[0040] Figure 2B is a top view of one embodiment of a coil 130 positioned on a dielectric plate 138 in a lid assembly 106. In one embodiment, a Figure 2BThe coil 130 configuration shown in FIG is formed so that each planar coil is connected in series with the adjacently positioned coil 130 in a desired pattern across the showerhead 124. The coil 130 includes a rectangular spiral conductor pattern 290. The electrical connections include an electrical input terminal 295A and an electrical output terminal 295B. Each of the one or more coils 130 of the showerhead 124 is connected in series and / or in parallel.

[0041] Figure 3A FIG is a bottom plan view of one embodiment of the panel 132 of the showerhead 124. As described above, the showerhead 124 is configured to include one or more zones, each zone having an independently controlled gas flow rate to the zone. For example, the panel 132 includes a center zone 300A, a middle zone 300B, and one or more outer zones 300C and 300D. The gas flow rates to the zones are controlled by flow controllers 142, 143, and 144 (e.g., Figure 1 ) control.

[0042] Figure 3B is a partial bottom plan view of another embodiment of a face plate 132 of a showerhead 124. In this embodiment, the perforated tiles 134 are supported by perforated strips 225. The perforated strips 225 and the removable strips 250 are secured to support members 136 using fasteners 305, which are not shown in this view because they are located behind the perforated strips 225 and the removable strips 250.

[0043] Figure 4 1 is a schematic bottom plan view of another embodiment of a showerhead 124 illustrating a gas flow injection pattern formed into the gas volume 140 within the showerhead 124. The length 400 and width 405 of the substrate are shown on the side of the showerhead 124. The precursor flow can be provided to the gas volume 140 unidirectionally as shown by arrow 410 or bidirectionally as shown by arrow 415. The precursor flow can be provided to the gas volume 140 by flow controllers 142, 143 and 144 (e.g. Figure 1 In addition, flow controllers 142, 143 and 144 (as shown in Figure 1 ) provide airflow zones such as edge zones 420, corner zones 425, and center zones 430. The openings 220, 230, and the restrictors 215 (all in FIG. Figure 2A The flow rate of the precursor to each gas volume 140 and / or zone can be adjusted by the size of one or a combination of the gas volumes 140 and / or zones shown in FIG.

[0044] The flow rate to each gas volume 140 may be the same or different. Figure 1140. The flow rate to the gas volume 140 is controlled by mass flow controllers 142, 143, and 144 shown in FIG. As described above, the flow rate to the gas volume 140 can be additionally controlled by sizing the flow restrictor 215. The flow rate to the processing region 126 can be controlled by the size of the openings 220 in the perforated tiles 134 and the size of the openings 230 in the perforated strips 225. Bidirectional flow or unidirectional flow into the gas volume 140 can be used as needed to provide sufficient gas flow to the processing region 126.

[0045] Methods of controlling gas flow include: 1) multi-zone (center / edge / corner / any other zone) control using different flow rates from mass flow controllers 142, 143 and 144; 2) flow control through different orifice sizes (size of restrictor 215); 3) flow direction control into the gas volume 140 (one-way or two-way); and 4) flow control through the size of the openings 220 in the perforated brick 134, the number of openings 220 in the perforated brick 134, and / or the position of the openings 220 in the perforated brick 134.

[0046] Figure 5 It is from Figure 1 The support frame 500 is a bottom cross-sectional view of the support frame 500 viewed along the section line shown in FIG. The support frame 500 is composed of a plurality of support members 136. Figure 5 The support frame 500 is shown cut along a cross section of the second conduit 205, showing the various diameters (pore sizes) of the restrictors 215. In one embodiment, the various pores of each restrictor 215 can be varied or configured based on desired gas flow characteristics.

[0047] In this embodiment, each flow restrictor 215 includes a first diameter portion 505, a second diameter portion 510, and a third diameter portion 515. Each of the diameters of the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 can be different or the same. Each diameter can be selected based on the desired flow characteristics of the spray head 124. In one embodiment, the first diameter portion 505 has the smallest diameter, the third diameter portion 515 has the largest diameter, and the second diameter portion 510 has a diameter between the first diameter portion 505 and the third diameter portion 515. In the illustrated embodiment, a plurality of flow restrictors 215 having the first diameter portion 505 are shown in the center portion of the support frame 500, while a plurality of flow restrictors 215 having the third diameter portion 515 are shown in the outer portions of the support frame 500.

[0048] In addition, a plurality of flow restrictors 215 having a second diameter portion 510 are shown in the intermediate region between the center portion and the outer portion. In other embodiments, the positions of the flow restrictors 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 may be as shown in FIG. Figure 5 Alternatively, the restrictor 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 may be placed in various portions of the support frame 500 depending on the desired characteristics and control through the gas volume 140. In some embodiments, uniform airflow across the showerhead 124 may be desired. However, in other embodiments, the airflow to each gas volume 140 of the showerhead 124 may be non-uniform. The non-uniform airflow may be due to certain physical structures and / or geometries of the processing chamber 100. For example, it may be desirable to have uniform airflow in the portion adjacent to the transfer port 114 (at Figure 1 There is more airflow in the portion of the nozzle 124 (shown in FIG).

[0049] Embodiments of the present disclosure include methods and apparatus for a showerhead and a plasma deposition chamber having a showerhead capable of forming one or more films on a large area substrate. Plasma uniformity and gas (or precursor) flow can be controlled by a combination of individual perforated tiles 134, coils 130 dedicated to specific ones of the perforated tiles 134, and / or flow controllers 142, 143, and 144, and by varying the size and / or position of the flow restrictor 215.

[0050] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is determined by the claims that follow.

Claims

1. A plasma deposition chamber, comprising: a showerhead having a plurality of perforated tiles, each of the plurality of perforated tiles being coupled to and supported by a plurality of support members; a plurality of dielectric plates, each of the dielectric plates corresponding to one of the perforated tiles, and each of the plurality of dielectric plates and the corresponding one of the plurality of perforated tiles being supported by the same support member; and a plurality of inductive couplers, wherein each of the plurality of inductive couplers is positioned over one of the plurality of dielectric plates, wherein a surface of each of the plurality of dielectric plates, a surface of a corresponding one of the plurality of perforated bricks, and a surface of the support members supporting the dielectric plates and the corresponding perforated bricks form a gas volume, and wherein the support members supporting the dielectric plates and the corresponding perforated bricks provide precursor gas to the gas volume.

2. The chamber of claim 1, wherein each of the plurality of support members comprises a conduit formed therein for flowing the precursor gas.

3. The chamber of claim 1, wherein each of the plurality of support members comprises a coolant channel formed therein for flowing a coolant.

4. The chamber of claim 1, wherein the dielectric plate defines one side of the gas volume.

5. The chamber of claim 1, wherein each of the plurality of perforated tiles and each of the support members supporting the perforated tiles comprises an interface portion.

6. The chamber of claim 5, wherein each interface portion comprises a removable strip.

7. The chamber of claim 1, wherein a portion of the plurality of perforated tiles are separated by perforated strips.

8. The chamber of claim 7, wherein each perforated strip is coupled to a support member of the plurality of support members through an interface portion.

9. The chamber of claim 8, wherein each interface portion comprises a removable strip.

10. A showerhead for a plasma deposition chamber, the showerhead comprising: a support member including a plurality of first support surfaces and a plurality of second support surfaces, wherein the plurality of first support surfaces are disposed a first distance from the plurality of second support surfaces in a first direction; A plurality of gas delivery assemblies comprising a plurality of perforated tiles and a plurality of dielectric plates, wherein each of the plurality of gas delivery assemblies comprises: a perforated tile disposed on a first support surface of the plurality of first support surfaces; and a dielectric plate disposed on a second supporting surface among the plurality of second supporting surfaces, wherein a gas volume is defined between a surface of the dielectric plate and a surface of the perforated brick; a plurality of gas delivery ports, wherein each gas delivery port is configured to deliver gas to a gas volume of the plurality of gas delivery assemblies; and One or more coils, each of the one or more coils or portions of the one or more coils being located above a respective dielectric plate.

11. The showerhead of claim 10, wherein the support member comprises a conduit formed in the support member for flowing a precursor gas.

12. The showerhead of claim 10, wherein the support member comprises a coolant channel formed therein for flowing a coolant.

13. The showerhead of claim 10, the dielectric plate defining one side of the gas volume.

14. The showerhead of claim 10, wherein each of the plurality of perforated tiles and the support member include an interface portion.

15. The showerhead of claim 14, wherein each interface portion comprises a removable strip, and wherein a portion of the plurality of perforated tiles are separated by the perforated strips.

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