Semiconductor Modules

Abstract

The semiconductor module (1) of the present invention comprises: a semiconductor switch element (T1-T4); a plurality of bases (11), at least any one of which has the semiconductor switch element (T1-T4) mounted thereon; a molded resin (10) sealing the semiconductor switch element (T1-T4) and the plurality of bases (11); a plurality of terminals (C1-C6, B1, B2, G1, G2, M1, M2) formed integrally with each of the plurality of bases (11) and arranged to be received by the molded resin (10); The outer peripheral side protrudes; the concave portion (12) or the convex portion (13) has a depth or height that ensures the creepage distance between the multiple terminals (C1-C6, B1, B2, G1, G2, M1, M2) in a part of the outer peripheral (9) side of the molded resin (10) between the multiple terminals (C1-C6, B1, B2, G1, G2, M1, M2), and is formed to cross the relative parts between the multiple terminals (C1-C6, B1, B2, G1, G2, M1, M2).

Description

Technical Field

[0001] The present application relates to a semiconductor module. Background Art

[0002] Conventionally, as a countermeasure for leakage, in semiconductor module packaging, the space between terminals protruding from the outer periphery of the package is made into a concave-convex shape, thereby making the creepage distance between the terminals longer. For example, in the conventional IC package of a semiconductor module disclosed in Patent Document 1, the entire side surface of the IC package is made into a concave-convex stepped shape, and the external wire is configured to be led out from the concave and convex parts of the package outer shape in a zigzag arrangement, thereby extending the creepage distance between the terminals.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Utility Model Publication No. 1-113346 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] However, the IC package of the semiconductor module disclosed in the above-mentioned Patent Document 1 has the following problems: the outer shape of the package and the terminals are different between adjacent ones, and the metal mold of the package formed by resin molding is manufactured into a complex shape, and the processability is complicated. In addition, when demolding from the metal mold, the surface of the metal mold in contact with the resin is wide, so there is a problem that resin peeling occurs and the reliability of the semiconductor module is impaired.

[0008] The present application discloses a technology for solving the above-mentioned problems, and aims to provide a semiconductor module that ensures a creepage distance between terminals, simplifies the processability of a molding resin, and improves reliability.

[0009] Technical means for solving technical problems

[0010] The semiconductor module disclosed in the present application includes: a semiconductor switching element; a plurality of bases, at least any one of which is mounted with the semiconductor switching element; a molding resin, which seals the semiconductor switching element and the plurality of bases; a plurality of terminals, which are integrally formed with each of the plurality of bases and are arranged to protrude from the peripheral side surface of the molding resin; and a recess or a protrusion, which has a depth or height that ensures a creepage distance between the plurality of terminals in a portion of the peripheral side surface of the molding resin between the plurality of terminals, and is formed to cross relative portions between the plurality of terminals.

[0011] Effects of the Invention

[0012] According to the semiconductor module disclosed in the present application, it is possible to obtain a semiconductor module that ensures the creepage distance between terminals, simplifies the processability of the molding resin, and improves reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 1 is a circuit diagram showing a semiconductor module according to the first embodiment.

[0014] Figure 2A This is a plan view showing the internal structure of the semiconductor module according to the first embodiment.

[0015] Figure 2B This is a side view showing the semiconductor module according to the first embodiment.

[0016] Figure 3 This is a partial detailed view showing the semiconductor module according to the first embodiment.

[0017] Figure 4 This is a partial detailed view showing the semiconductor module according to the first embodiment.

[0018] Figure 5A It is a partial plan view showing a semiconductor module according to the second embodiment.

[0019] Figure 5B This is a partial side view showing a semiconductor module according to the second embodiment. DETAILED DESCRIPTION

[0020] Hereinafter, the semiconductor module according to the first embodiment will be described with reference to the drawings.

[0021] In addition, in each drawing, the same reference numerals are used to indicate the same parts or corresponding parts.

[0022] Implementation method 1.

[0023] Figure 1 1 is a circuit diagram showing a semiconductor module according to Embodiment 1. The semiconductor module 1 incorporates at least one of a plurality of semiconductor switching elements T1 to T4 . Figure 1 The H-bridge circuit for driving the motor 2 is shown. The semiconductor module 1 includes the motor 2, a positive (+) power supply 3, and a ground 4. Figure 1 In FIG. 1 , double circle marks represent terminals C1 to C6, B1, B2, G1, G2, M1, and M2. The semiconductor switch elements T1 to T4 are, for example, field effect transistors (FETs). Figure 1As shown, in the semiconductor module 1, a bridge circuit is formed by four FETs, and the motor 2 is connected to the intermediate connection position between the upper and lower arms, namely, the terminals C5 and C6 for small signals and the terminals M1 and M2 for large currents.

[0024] In addition, terminals C1, C2, C3, and C4 for small signals are control signal terminals for gate driving of FETs, and terminals C5 and C6 for small signals are voltage monitoring terminals for motor 2. Terminals B1 and B2 for large currents are connected to a positive (+) power supply 3, and terminals G1 and G2 for large currents are connected to ground 4. Output terminals to motor 2 are terminals M1 and M2 for large currents.

[0025] Figure 2A is a plan view showing the internal structure of the semiconductor module according to the first embodiment. Figure 1 The circuit structure shown in is formed as a semiconductor module 1. In addition, Figure 2A The semiconductor module 1 is shown in perspective, and the outer shape of the molded resin 10 is shown by a single dotted line. For example, a plate-shaped base 11 of copper or copper alloy is divided into a plurality of patterns. Terminals C1-C6, B1, B2, G1, G2, M1, and M2 are respectively formed integrally with the plurality of bases 11, so that semiconductor switching elements T1-T4 are mounted on the bases 11. On the side surface of the outer periphery 9 of the molded resin 10 of the semiconductor module 1, terminals G1, B1, M1, M2, B2, and G2 for large currents and terminals C2, C6, C1, C3, C5, and C4 for small signals are formed, which are arranged to extend and protrude from the base 11. As shown in FIG. Figure 2A As shown, terminals G1, B1, M1, M2, B2, and G2 for large current are arranged on the lower side of the figure, and terminals C2, C6, C1, C3, C5, and C4 for small signals are arranged in sequence on the upper side of the figure.

[0026] like Figure 1 As shown in the figure, in the H-bridge circuit, FETs are connected in series with the upper and lower arms, and they form pairs, so Figure 2A The configuration in the figure also becomes the same configuration on both sides, that is, a mirror configuration. Therefore, only one of the configuration and connection will be described.

[0027] like Figure 2AAs shown, the base 11 of the copper plate extends from the terminal B1 for large current to the inside of the semiconductor module 1, and a FET as a semiconductor switch element T1 is installed. The gate (not shown) of the FET as the semiconductor switch element T1 is connected to the terminal C1 for small signals through the lead J3 based on wire bonding. The base 11 of the copper plate is directly connected to the drain (not shown) of the FET as the semiconductor switch element T1, and on the other hand, the source (not shown) is electrically wired through the jumper J1. The jumper J1 is also formed in the shape of a copper plate like the base 11 of the copper plate, and not only a large current flows, but also excellent thermal conductivity.

[0028] One of the jumpers J1 (the lower side in the figure) is connected to the other base 11, and is connected to the output terminal to the motor 2, that is, the terminal M1 for large current. The other side (the upper side in the figure) is connected to the base 11 of the FET of the semiconductor switch element T2 as the lower arm. The FET as the semiconductor switch element T2 is also the same as the FET as the semiconductor switch element T1, and the gate is connected to the terminal C2 for small signals through the lead J3 based on the lead bonding, and the source is connected to the terminal G1 for large current as the ground terminal via the jumper J2.

[0029] As described above, in the semiconductor module 1 according to the first embodiment, after the semiconductor switch elements T1, T2, T3, T4, the base 11, the jumpers J1, J2, etc. are arranged and connected, the entirety is covered and sealed with the mold resin 10 indicated by a single dot-dashed line.

[0030] In the semiconductor module 1, the semiconductor switch elements T1-T4 are driven to be turned on and off and are controlled by a relatively large current. Specifically, the terminals G1, B1, M1, M2, B2, and G2 for large current carry a maximum current of about 100 A. In addition, the terminals C1-C6 for small signals are controlled by relatively small current signals and carry less than a few mA.

[0031] The terminals C1-C6, B1, B2, G1, G2, M1, and M2 are arranged close to each other to realize the miniaturization of the entire device, i.e., the semiconductor module 1. In addition, there is a possibility of leakage due to the environment in which the device, i.e., the semiconductor module 1, is installed, or the material and coating of the molding resin 10, etc., and ensuring the insulation not only affects the normal driving of the device, i.e., the semiconductor module 1, but also affects the reliability of the entire device including the semiconductor module 1, such as a power conversion device.

[0032] Therefore, in the semiconductor module 1 in the first embodiment, it is necessary to ensure the creepage distance, but if the distance is set too large, it will hinder the miniaturization of the device. The creepage distance is usually specified according to its material, degree of contamination, etc., but the operating voltage is particularly important. For example, when the device is installed in a vehicle, the voltage is generally the battery voltage of 14V, so since it is a relatively low voltage, the creepage distance can be about 1mm. However, if it is about 350V in an electric car, it is a high voltage, so if the operating voltage is also assumed to be 350V, the creepage distance needs to be about 3mm.

[0033] In addition, the creepage distance is the shortest distance between the terminals along the mold resin 10 as the insulating resin, and therefore, the relative position to the adjacent terminal, the thickness and width of the terminal itself, and the distance between the sides of the terminal must also be considered. According to the semiconductor module 1 involved in the first embodiment, the concave portion 12 or the convex portion 13 is provided on a part of the outer periphery 9 of the semiconductor module 1 between the terminals. Thus, the shortest distance between the terminals is extended by the concave and convex surface.

[0034] like Figure 2A As shown, the outer periphery 9 of the molded resin 10 on the upper side of the figure is provided with terminals C1, C6, and C2 for small signals, and the outer periphery 9 between the terminals C1, C6, and C2 for small signals is provided with a recessed portion 12. On the other hand, the outer periphery 9 of the molded resin 10 on the lower side of the figure is provided with terminals M1, B1, and G1 for large currents, and the outer periphery 9 between the terminals M1, B1, and G1 for large currents is provided with a protruding portion 13. Figure 2A As shown, when the recess 12 and the convex portion 13 are not formed, the shortest distance between the terminals becomes the outer periphery 9 represented by the single-dot chain line, but by providing the recess 12 and the convex portion 13, the distance along the outer periphery 9 can be arbitrarily obtained by using the depth of the recess 12 or the height of the convex portion 13. In addition, there is a gap so that the plurality of terminals C1, C6, C2 are not in contact with the recess 12 or the plurality of terminals M1, B1, G1 are not in contact with the convex portion 13.

[0035] In addition, in the space 14a between the small signal terminals C1 and C3 and the space 14b between the large current terminals M1 and M2, since the length between the terminals is long and wide, it is not necessary to provide the recessed portion 12 or the convex portion 13 to ensure the creepage distance. Figure 2B FIG. 2 is a side view showing a semiconductor module according to Embodiment 1. Figure 2BAs shown, the shape of the convex portion 13 is a mountain shape (including a trapezoidal shape) formed in the extending direction of the terminal G2. In addition, in the semiconductor module 1, the convex portion 13 may not be formed entirely across the side of the outer periphery 9 of the molding resin 10. In addition, the convex portion 13 may be provided between the terminals C1-C6 for small signals and the concave portion 12 may be provided between the terminals G1, B1, M1, M2, B2, and G2 for large currents, or either the concave portion 12 or the convex portion 13 may be provided.

[0036] Next, use Figure 3 , Figure 4 The concavoconvex portion will be described in further detail. Figure 3 This is a partial detailed view showing the semiconductor module according to the first embodiment. Figure 3 is from Figure 2A 1 is a cross-sectional view of the semiconductor module 1 shown in FIG. 1 , in which the terminal C6 - B1 is viewed from C2 - G1 . The dashed-dotted line indicates the outer periphery 9 of the semiconductor module 1 .

[0037] In the semiconductor module 1 according to the first embodiment, the recess 12 provided near the terminal C2 for small signals is hollowed out from the outer periphery 9 in a substantially semicircular shape. On the other hand, the convex portion 13 is formed to protrude in the extension direction of the terminal G1 and is in a trapezoidal shape. The creepage distance is the shortest distance between the ends of the terminal. Therefore, in the semiconductor module 1 according to the first embodiment, the portion of the convex portion 13 opposite to the terminal G1 for large current in the thickness direction t is the highest and gradually becomes lower as it moves away from the terminal in the thickness direction t. That is, the convex height of the convex portion 13 can also be changed according to the distance between the opposing portions 8 of the terminals.

[0038] The convex portion 13 is arranged so as to cross the opposing portions 8 between the terminals, and its height is variable so that the creepage distance can be ensured. Similarly, in the concave portion 12, as shown by the dotted line 12a, the thickness direction of the terminal C2, that is, the opposing portions 8 between the terminals are the deepest, and the concave portion 12 can be made shallower as it moves away from the thickness direction t. In addition, by providing the concave portion 12 or the convex portion 13, the spatial distance between the opposing portions 8 between the terminals can also be naturally extended, so it is effective not only to prevent leakage but also to prevent discharge from the terminals.

[0039] Figure 41 is a partial detailed view showing a semiconductor module according to Embodiment 1, and is a three-dimensional enlarged view showing a partial enlargement of the convex portion 13. The convex portion 13 is arranged on the side surface (wall surface) of the outer periphery 9 of the molded resin 10 between the terminal G1 for large current and the terminal B1 for large current in the semiconductor module 1. Here, when observing the creepage distance between the terminal G1 for large current and the terminal B1 for large current, a line L1 drawn straightly from a corner where the terminal G1 for large current and the terminal B1 for large current face each other along the surface of the convex portion 13 is longer than when the convex portion 13 does not exist. This length can be regarded as the creepage distance, and therefore, by making the height of the convex portion 13 variable, the length can be changed to a desired distance.

[0040] In addition, for line L2, the corners of the terminals as the starting and ending points are the same as those of line L1, but the terminals are led out around the lower point of the protrusion 13. The line length of line L2 must also be such that the desired creepage distance is ensured, and the inclined surface 7 needs to be carefully determined in the case where the line gradually becomes lower from the top of the protrusion 13. That is, the shortest distance between the terminals is not limited to a straight line, and the periphery of the concave portion 12 or the protrusion 13 and the outer periphery 9 of the molded resin 10 as a package should also be considered.

[0041] Furthermore, the recess 12 may also be formed to have a smooth inclined surface 7 from the inside toward the outer periphery 9. Providing the inclined surface 7 in the recess 12 or the projection 13 also has the advantage that mold resin 10 for molding the entire semiconductor module 1 can be easily demolded.

[0042] In the semiconductor module 1 according to the first embodiment, no matter which of the recessed portion 12 and the convex portion 13 is provided, the significant difference in ensuring the creepage distance is small, but it is also possible to select which one to provide according to other conditions. For example, when the base 11 and the like are provided at a position close to the outer periphery 9 of the molded resin 10, since there is no room for providing the recessed portion 12, providing the recessed portion 13 can obtain a semiconductor module 1 with high reliability. In addition, when it is necessary to further extend the creepage distance, the recessed portion 12 and the convex portion 13 can also be provided in combination.

[0043] As described above, according to the semiconductor module 1 of the first embodiment, the recess 12 or the convex portion 13 is included in a part of the side surface of the outer periphery 9 of the mold resin 10 between the plurality of terminals C1-C6, B1, B2, G1, G2, M1, and M2, and the recess 12 or the convex portion 13 has a depth or a height that ensures the creepage distance between the plurality of terminals C1-C6, B1, B2, G1, G2, M1, and M2 and is formed to cross the facing portion 8 between the plurality of terminals C1-C6, B1, B2, G1, G2, M1, and M2, thereby improving the reliability of the semiconductor module 1. In addition, the convex portion 13 may not be formed integrally with the mold resin 10 of the semiconductor module 1, but if it is integrally formed, it can be formed by the same process during molding, so there is an effect that the manufacturing process can be simplified.

[0044] In addition, according to the semiconductor module 1 of the first embodiment, the spatial distance between the terminals can be extended while ensuring the creepage distance to improve the reliability. In addition, in the semiconductor module 1, the terminals are concave-convex in a part of the periphery 9 of the molding resin 10, so the configuration and shape of the terminals themselves are not affected, and thus the processability of the semiconductor module 1 used for manufacturing the device is not reduced.

[0045] Implementation method 2.

[0046] Figure 5A is a partial top view of a semiconductor module according to Embodiment 2. Figure 5B This is a partial side view of the semiconductor module according to the second embodiment. Figure 5A and Figure 5B In the embodiment, the circuit structure is the same as that of the first embodiment, but a semiconductor module 1a of another structure is shown. Figure 5A as well as Figure 5B This section explains how to ensure the creepage distance between multiple terminals C10-C13.

[0047] like Figure 5B As shown, in the semiconductor module 1a of the second embodiment, the plurality of terminals C10-C13 are arranged in a chimera-like (sawtooth-like) configuration from the outer peripheral side surface 9 of the molding resin 10. In addition, not only the thickness of each terminal C10-C13 but also the width direction of each terminal C10-C13 affects the relative portion 8 of each terminal C10-C13. For such an arrangement of the plurality of terminals C10-C13, the creepage distance is the shortest distance between the relative portions 8 between the plurality of terminals C10-C13, and therefore becomes a straight line from each side of the terminals C10-C13. Figure 5A and Figure 5BIn the embodiment 2, the dotted line 18 is a plurality of lines connecting the corners of the terminal C10 from the corner of the terminal C12, and the relative line 17 indicated by other dotted lines is equivalent to the relative portion 8 of the terminal C10 and the terminal C12, so it is necessary to provide a concave-convex portion to cross between the regions. That is, the relative portion 8 between the plurality of terminals C10-C13 in the second embodiment is an area portion sandwiched and surrounded by a plurality of lines connecting any positions around the adjacent plurality of terminals C10-C13 with the shortest distance.

[0048] exist Figure 5A and Figure 5B In the example of forming the protrusion 15 in the opposing portion 8 between the plurality of terminals C10-C13, the description is made. Figure 5B As shown, for example, the relative portion 8 of the terminal C10 and the terminal C12 is the area of ​​the area portion sandwiched and surrounded by the relative line 17 represented by other dotted lines, which is represented by oblique lines. In addition, the relative portion 8 of the terminal C10 and the terminal C13 is also the area of ​​the area portion sandwiched and surrounded by the relative line 17 represented by other dotted lines. Figure 5A and Figure 5B As shown, in the semiconductor module 1a of the second embodiment, the convex portion 15 is provided in the opposing portion 8 surrounded by the opposing line 17 indicated by another dotted line. Therefore, in the semiconductor module 1a of the second embodiment, the convex portion 15 is in a laterally long shape. Thus, in the semiconductor module 1a of the second embodiment, the convex portion 15 is provided between the upper and lower terminals.

[0049] Furthermore, the convex portion 16 is also provided between terminals adjacent to each other in the lateral direction, for example, between the terminal C10 and the terminal C11 and between the terminal C12 and the terminal C13 .

[0050] As described above, according to the semiconductor module 1a involved in the second embodiment, the convex portion 15 or the convex portion 16 is provided on the relative portion 8 between the terminals, thereby ensuring the creepage distance. The convex portion 15 or the convex portion 16 is provided to cross (cut off) the relative portion 8, so that, in particular, the horizontal position of the convex portion 15 in the figure cuts off the relative line 17, and thus, there is a degree of freedom in the configuration in the left and right directions. In addition, compared with the convex portion 15, the shortest distance between the terminals of the convex portion 16 is longer, so the height of the convex portion 16 can be formed to be lower than the height of the convex portion 15.

[0051] In the semiconductor module 1a according to the second embodiment, the convex portion 15 or the convex portion 16 may not be formed integrally with the molded resin 10 of the semiconductor module 1a, but if formed integrally, it can be formed by the same process during molding, thereby having an effect of simplifying the manufacturing process. In addition, in the semiconductor module 1a according to the second embodiment, a concave portion (not shown) can be provided so as to cut off the opposing portion 8 between the terminals C10-C13. In the semiconductor module 1a according to the second embodiment, the concave and convex portions can be unified into either the concave portion or the convex portion as much as possible to make it a simple structure.

[0052] In the second embodiment, the opposing portion 8 between the plurality of terminals C10-C13 is defined as an area portion sandwiched and surrounded by a plurality of lines that connect any positions around the plurality of adjacent terminals C10-C13 to each other at the shortest distance. However, in the semiconductor module 1 of the first embodiment, for example Figure 4 The opposing portion 8 of the terminal G1 and the terminal B1 shown in the figure may of course be an area portion sandwiched and surrounded by a plurality of lines connecting a plurality of adjacent terminals, for example, arbitrary locations around the terminal G1 and the terminal B1, with the shortest distance.

[0053] Although the present application describes various exemplary embodiments and examples, various features, forms, and functions described in one or more embodiments are not limited to being applicable to specific embodiments, and may be applicable to the embodiments individually or in various combinations.

[0054] Therefore, it can be considered that numerous variations not shown are also included in the technical scope disclosed in the specification of this application. For example, it is assumed that at least one structural element is deformed, added, or omitted, and at least one structural element is extracted and combined with structural elements of other embodiments.

[0055] Description of symbols

[0056] 1, 1a semiconductor module; 2 electric motor; 3 power supply; 4 ground; 7 inclined surface; 8 opposing portion; 9 periphery; 10 molding resin; 11 base; 12 recessed portion; 12a dotted line; 13, 15, 16 convex portions; 17 opposing line; 18 dotted line; C1, C2, C3, C4, C5, C6, C10, C11, C12, C13, B1, B2, G1, G2, M1, M2 terminals; T1, T2, T3, T4 semiconductor switching elements.

Claims

1. A semiconductor module, characterized in that: include: Semiconductor switching elements; a plurality of bases, the semiconductor switch element being mounted on at least any one of the plurality of bases; a molding resin that seals the semiconductor switch element and the plurality of bases; a plurality of terminals formed integrally with each of the plurality of bases and arranged to protrude from an outer peripheral side of the molded resin; as well as a concave portion or a convex portion, which is a portion of the outer peripheral side surface of the molded resin between the plurality of terminals, and has a depth or a height that ensures the creepage distance between the plurality of terminals and is formed to cross the opposing portions between the plurality of terminals, The plurality of terminals are arranged in a zigzag pattern from the outer peripheral side of the molding resin. The concave portion or the convex portion is provided between upper and lower terminals among the plurality of terminals arranged in the sawtooth shape, and is formed into a laterally long shape in a plan view. A gap is provided so that the plurality of terminals do not contact the concave portion or the convex portion.

2. The semiconductor module according to claim 1, wherein: The concave portion or the convex portion is made of the same material as the molding resin.

3. The semiconductor module according to claim 1 or 2, characterized in that The convex portion is a mountain-shaped portion formed in the extending direction of the terminal and has a first portion opposite to the thickness direction of the terminal. The height of the protrusion is formed to be gradually lower than the first portion as it becomes farther away from the terminal in the thickness direction.

4. The semiconductor module according to claim 1 or 2, characterized in that The concave portion is formed by digging out a semicircular shape from the outer peripheral side surface of the molding resin. The depth of the recessed portion is formed to become shallower as it becomes farther away from the terminal in the thickness direction.

5. The semiconductor module according to any one of claims 1 to 4, characterized in that The concave portion or the convex portion has an inclined surface.

6. The semiconductor module according to any one of claims 1 to 5, characterized in that The opposing portions between the plurality of terminals are areas sandwiched by a plurality of lines connecting the surrounding portions of the plurality of adjacent terminals to each other at the shortest distance. The concave portion or the convex portion is arranged to divide the region.

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