Coating and Developing Equipment

Abstract

The present invention provides a coating and developing device, which includes a cassette module, a first process module, a second process module, and an interface module. One end of the first process module and the second process module is connected to the cassette module, and the other end of the first process module and the second process module is connected to the interface module. The first process module and the second process module can work independently of each other, saving maintenance time and improving production efficiency. A first inter-layer process robot, an intra-layer process robot group, and a second inter-layer process robot are arranged between the first process module and the second process module. The robots in the first inter-layer process robot, the second inter-layer process robot, and the intra-layer process robot group all have two sets of end effectors with opposite orientations, and the number of each set of end effectors is m, where m is a natural number greater than or equal to 2, which can realize the handling of multiple wafers and improve production efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and particularly to a spin coating and developing device. Background Art

[0002] In the existing lithography process of semiconductor processing, a spin coating device, a lithography device, and a developing device respectively complete the spin coating process flow, the lithography process flow, and the developing process flow. With the improvement of the semiconductor processing technology level, the market mainstream connects the spin coating and developing device with the lithography device to complete the entire lithography process flow. Usually, the spin coating process flow and the developing process flow are integrated on the same device. At the same time, the production capacity of the spin coating and developing device needs to be greater than that of the lithography device, and the production capacity of the spin coating and developing device is determined by the bottleneck production capacity of the process unit and the bottleneck production capacity of the robot. The form of the traditional device robot is fixed, and the speed of the robot has approached the limit. To improve the bottleneck production capacity of the device robot, it can only be achieved by increasing the number of robots. However, increasing the number of robots will lead to an increase in the floor area of the developing device, and the increase in the floor area becomes another limiting condition for restricting the production capacity.

[0003] Therefore, it is necessary to provide a new type of spin coating and developing device to solve the above problems existing in the prior art. Summary of the Invention

[0004] The purpose of the present invention is to provide a spin coating and developing device, which can improve the working efficiency of the developing device on the premise of the same number of robots and the robot speed.

[0005] To achieve the above purpose, the spin coating and developing device of the present invention includes a cassette module, a first process module, a second process module, and an interface module. One end of the first process module and the second process module is connected to the cassette module, and the other end of the first process module and the second process module is connected to the interface module. A first interlayer process robot, an in-layer process robot group, and a second interlayer process robot are arranged between the first process module and the second process module. The robots in the first interlayer process robot, the second interlayer process robot, and the in-layer process robot group all have two sets of end effectors with opposite orientations, and the number of each set of end effectors is m, where m is a natural number greater than or equal to 2.

[0006] The beneficial effects of the present invention are as follows: The first process module and the second process module are arranged side by side between the cassette module and the interface module. The first process module and the second process module can work independently of each other, saving maintenance time and improving production efficiency. Each of the manipulators in the first interlayer process manipulator, the second interlayer process manipulator, and the intra-layer process manipulator group has two end effectors with opposite orientations. The number of each group of end effectors is m, where m is a natural number greater than or equal to 2. Multiple wafers can be simultaneously transported in one direction, improving production efficiency.

[0007] Preferably, the intra-layer process manipulator group includes, from bottom to top, a first intra-layer process manipulator, a second intra-layer process manipulator, and a third intra-layer process manipulator with the same structure. The beneficial effects are as follows: The first intra-layer process manipulator, the second intra-layer process manipulator, and the third intra-layer process manipulator can be used to transport wafers at different positions in the first process module and the second process module. Independent operation improves production efficiency, and the arrangement from bottom to top makes full use of the vertical space and saves floor area.

[0008] More preferably, the first intra-layer process manipulator includes a first vertical sliding part, a first horizontal sliding part, and a first actuator pedestal. The first vertical sliding part is arranged above the first horizontal sliding part, and the first vertical sliding part is slidably connected to the first horizontal sliding part. The first actuator pedestal is arranged on one side of the first vertical sliding part. The beneficial effect is that it facilitates the movement of the first actuator pedestal in the horizontal and vertical directions.

[0009] More preferably, the first actuator pedestal includes a connecting part, a first executing part, and a second executing part.

[0010] More preferably, the connecting plate includes a bearing part and a vertical connecting part. The vertical connecting part is arranged on one side of the bearing part, and the vertical connecting part is slidably connected to the first vertical sliding part.

[0011] More preferably, an actuator slide rail is provided on the upper side of the bearing part. The actuator slide rail is perpendicular to the vertical connecting part. The first executing part and the second executing part are arranged on the upper side of the actuator slide rail. The first executing part and the second executing part are both parallel to the vertical connecting part. The second executing part is fixedly connected to the actuator slide rail. An actuator slider is provided on the lower side of the first executing part, and the actuator slider is slidably connected to the actuator slide rail. The beneficial effect is that it facilitates the adjustment of the assembly error between the first executing part and the second executing part.

[0012] Further preferably, a first upper slideway and a first lower slideway are provided on a side of the first actuator facing away from the second actuator. A first upper bending plate is provided on the first upper slideway. The first upper bending plate is slidably connected to the first upper slideway. A first lower bending plate is provided on the first lower slideway. The first lower bending plate is slidably connected to the first lower slideway. A first upper fixing plate is arranged above the first upper bending plate and the first lower bending plate. A first group of end effectors is provided on one side of the first upper fixing plate. The beneficial effect is that the first upper bending plate and the first lower bending plate jointly fix the first upper fixing plate, which can ensure the stability of the first upper fixing plate and prevent shaking.

[0013] Further preferably, a second upper slideway and a second lower slideway are provided on a side of the second actuator facing away from the first actuator. A second upper bending plate is provided on the second upper slideway. The second upper bending plate is slidably connected to the second upper slideway. A second lower bending plate is provided on the second lower slideway. The second lower bending plate is slidably connected to the second lower slideway. A second upper fixing plate is arranged above the second upper bending plate and the second lower bending plate. A second group of end effectors is provided on one side of the second upper fixing plate. The beneficial effect is that the second upper bending plate and the second lower bending plate jointly fix the second upper fixing plate, which can ensure the stability of the second upper fixing plate and prevent shaking.

[0014] Further preferably, the extending direction of the first group of end effectors is opposite to the extending direction of the second group of end effectors, and there is a first height difference between the first group of end effectors and the second group of end effectors. The beneficial effect is that there is a height difference between the first group of end effectors and the second group of end effectors, and the first group of end effectors and the second group of end effectors can overlap in the vertical direction, saving the occupied area on the horizontal plane.

[0015] Further preferably, there is a second height difference between the first process module and the second process module, and the first height difference is equal to the second height difference. The beneficial effect is that the height difference between the first process module and the second process module is the same as the height difference between the first group of end effectors and the second group of end effectors, enabling the first group of end effectors and the second group of end effectors to complete the grasping and placement of the wafer.

[0016] Further preferably, the first group of end effectors includes a first end effector and a second end effector, and the second group of end effectors includes a third end effector and a fourth end effector.

[0017] Further preferably, the first interlayer process manipulator and the second interlayer process manipulator have the same structure. The first interlayer process manipulator includes a second vertical sliding part and a second actuator pedestal, and the second actuator pedestal has the same structure as the first actuator pedestal.

[0018] Preferably, the cassette module includes a cassette manipulator and a cassette group. The cassette manipulator is disposed between the cassette group and the first process module. The beneficial effect is that it is convenient for the cassette manipulator to transfer the wafers from the cassette to the first process module.

[0019] Further preferably, the cassette manipulator includes n end effectors with the same orientation, where n is a natural number greater than or equal to 2. The beneficial effect is that it is convenient to transfer multiple wafers from the cassette group simultaneously.

[0020] Further preferably, the interface module is internally provided with an interface manipulator, and the interface manipulator has the same structure as the cassette manipulator. The beneficial effect is that it is convenient to transfer multiple wafers from the second interlayer process unit simultaneously.

[0021] Preferably, the first process module and the second process module have the same structure. The first process module includes a first interlayer process module, an in-layer process module, and a second interlayer process module arranged in sequence. The beneficial effect is that the first process module and the second process module have the same structure, which simplifies the process control of the first interlayer process manipulator, the in-layer process manipulator group, and the second interlayer process manipulator.

[0022] Further preferably, the first interlayer process module includes a first interlayer process unit and a first in-layer transfer unit. The first interlayer process unit is located between the cassette module and the first in-layer transfer unit. The beneficial effect is that it is convenient for the first interlayer process unit to receive wafers from the cassette module and for the first in-layer transfer unit to receive the processed wafers from the first interlayer process unit.

[0023] Further preferably, the first interlayer process unit includes a first high-precision cooling control unit group for wafer transfer, a first wafer transfer unit group, a second wafer transfer unit group, a second high-precision cooling control unit group for wafer transfer, an adhesion enhancement unit group, a wafer defect detection unit group, and a third high-precision cooling control unit group for wafer transfer. The first wafer transfer unit group is disposed above the first high-precision cooling control unit group for wafer transfer, the second wafer transfer unit group is disposed above the first wafer transfer unit group, the second high-precision cooling control unit group for wafer transfer is disposed above the second wafer transfer unit group, the adhesion enhancement unit group is disposed above the second high-precision cooling control unit group for wafer transfer, the wafer defect detection unit group is disposed above the adhesion enhancement unit group, and the third high-precision cooling control unit group for wafer transfer is disposed above the wafer defect detection unit group.

[0024] Further preferably, the first in-layer transfer unit is internally provided with a first high-precision cooling control unit group, and the first high-precision cooling control unit group is connected to the adhesion enhancement unit group.

[0025] Further preferably, the in-layer process module includes a first in-layer process unit and a second in-layer process unit. The first in-layer process unit is connected to the first interlayer process module, and the second in-layer process unit is connected to the second interlayer process module.

[0026] Further preferably, the first in-layer process unit includes a first high-level in-layer process unit, a second high-level in-layer process unit, and a third high-level in-layer process unit. The second high-level in-layer process unit is disposed above the first high-level in-layer process unit, and the third high-level in-layer process unit is disposed above the second high-level in-layer process unit.

[0027] Further preferably, the first high-level in-layer process unit includes an anti-reflective bottom layer coating unit group and a photoresist coating unit group. The photoresist coating unit group is disposed above the anti-reflective bottom layer coating unit group. The second high-level in-layer process unit includes an anti-reflective top layer coating unit group and a wafer backside cleaning unit group. The wafer backside cleaning unit group is disposed above the anti-reflective top layer coating unit group. The third high-level in-layer process unit includes a first developing unit group.

[0028] Further preferably, the second in-layer process unit includes a fourth high-level in-layer process unit, a fifth high-level in-layer process unit, and a sixth high-level in-layer process unit. The fifth high-level in-layer process unit is disposed above the fourth high-level in-layer process unit, and the sixth high-level in-layer process unit is disposed above the fifth high-level in-layer process unit.

[0029] Further preferably, the process units in the fourth height layer include a high-temperature heat treatment unit group and a first heat treatment unit group. The first heat treatment unit group is arranged above the high-temperature heat treatment unit group. The process units in the fifth height layer include a second heat treatment unit group and an edge exposure unit group. The edge exposure unit group is arranged above the second heat treatment unit group. The process units in the sixth height layer include a second development unit group and a third heat treatment unit group. The third heat treatment unit group is arranged above the second development unit group.

[0030] Further preferably, the second interlayer process module includes a second interlayer process unit and a second in-layer transfer unit. The second interlayer process unit is connected to the interface module, and the second in-layer transfer unit is connected to the in-layer process module.

[0031] Further preferably, the second interlayer process unit includes a third wafer transfer unit group, a wafer surface cleaning unit group, a fourth wafer transfer unit group, a fourth heat treatment unit group, and a fourth wafer transfer high-precision cooling control unit group. The wafer surface cleaning unit group is arranged above the third wafer transfer unit group. The fourth wafer transfer unit group is arranged above the wafer surface cleaning unit group. The fourth heat treatment unit group is arranged above the fourth wafer transfer unit group. The fourth wafer transfer high-precision cooling control unit group is arranged above the fourth heat treatment unit group.

[0032] Further preferably, the second in-layer transfer unit includes a second high-precision cooling control unit group, and the second high-precision cooling control unit group is connected to the high-temperature heat treatment unit group.

[0033] Further preferably, the in-layer process manipulator in the first layer, the process units in the first height layer, and the process units in the fourth height layer are located in the same horizontal plane. The in-layer process manipulator in the second layer, the process units in the second height layer, and the process units in the fifth height layer are located in the same horizontal plane. The in-layer process manipulator in the third layer, the process units in the third height layer, and the process units in the sixth height layer are located in the same horizontal plane. The beneficial effect is that it is convenient for the in-layer process manipulator in the first layer to carry wafers in the process units in the first height layer and the fourth height layer, convenient for the in-layer process manipulator in the second layer to carry wafers in the process units in the second height layer and the fifth height layer, and convenient for the in-layer process manipulator in the third layer to carry wafers in the process units in the third height layer and the sixth height layer. Description of the Drawings

[0034] Figure 1 It is a top view of the spin coating and developing equipment of the present invention;

[0035] Figure 2 Schematic diagram of the in-layer process robot group of the present invention;

[0036] Figure 3 Schematic diagram of the first type of robot of the present invention;

[0037] Figure 4 Schematic diagram of the first in-layer process robot of the present invention;

[0038] Figure 5 Schematic diagram of the first inter-layer process robot of the present invention;

[0039] Figure 6 Schematic diagram of the first actuator pedestal of the present invention;

[0040] Figure 7 is Figure 1 Cross-sectional view along the A-A' direction. Detailed implementation manners

[0041] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention. Obviously, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art to which the present invention pertains. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0042] In view of the problems existing in the prior art, the embodiments of the present invention provide a coating and developing device. Refer to Figure 1, the glue coating and developing equipment 10 includes a cassette module 11, a first process module 12, a second process module 13 and an interface module 14. One end of the first process module 12 and the second process module 13 is connected to the cassette module 11, and the other end of the first process module 12 and the second process module 13 is connected to the interface module 14. The first process module 12 and the second process module 13 have the same structure, and there is a second height difference between the first process module 12 and the second process module 13. A first interlayer process manipulator 15, an in-layer process manipulator group 16 and a second interlayer process manipulator 17 are arranged between the first process module 12 and the second process module 13. The first interlayer process manipulator 15 is connected to the cassette module 11, the second interlayer process manipulator 17 is connected to the interface module 14, and the in-layer process manipulator group 16 is connected to the second interlayer process manipulator 17. The manipulators in the first interlayer process manipulator 15, the second interlayer process manipulator 17 and the in-layer process manipulator group 16 all have two sets of end effectors with opposite orientations (not marked in the figure). The first process module 12 includes a first interlayer process module 121, an in-layer process module 122 and a second interlayer process module 123 arranged in sequence. The first interlayer process module 121 includes a first interlayer process unit 1211 and a first in-layer transfer unit 1212. The first interlayer process unit 1211 is located between the cassette module 11 and the first in-layer transfer unit 1212. The in-layer process module 122 includes a first in-layer process unit 1221 and a second in-layer process unit 1222. The first in-layer process unit 1221 is connected to the first interlayer process module 121, and the second in-layer process unit 1222 is connected to the second interlayer process module 123. The second interlayer process module 123 includes a second interlayer process unit 1231 and a second in-layer transfer unit 1232. The second interlayer process unit 1231 is connected to the interface module 14, and the second in-layer transfer unit 1232 is connected to the in-layer process module 122.

[0043] In some embodiments of the present invention, the interface module is connected to a lithography machine.

[0044] In some embodiments of the present invention, the number of each group of the end effectors is m, and m is a natural number greater than or equal to 2.

[0045] Figure 2 It is a schematic structural diagram of the in-layer process manipulator group in some specific embodiments of the present invention. Refer to Figure 2 , the in-layer process manipulator group 16 includes a first in-layer process manipulator 161, a second in-layer process manipulator 162 and a third in-layer process manipulator 163 with the same structure from bottom to top.

[0046] In some embodiments of the present invention, with reference to Figure 1 , the cassette module 11 includes a cassette manipulator 111 and a cassette group 112. The cassette manipulator 111 is disposed between the cassette group 112 and the first process module 12. The cassette group 112 includes a first cassette 1121, a second cassette 1122, a third cassette 1123, and a fourth cassette 1124.

[0047] In some embodiments of the present invention, with reference to Figure 1 , the cassette manipulator 111 includes n end effectors (not labeled in the figure) with the same orientation, where n is a natural number greater than or equal to 2.

[0048] In some embodiments of the present invention, with reference to Figure 1 , the interface module 14 is internally provided with an interface manipulator 141, and the interface manipulator 141 has the same structure as the cassette manipulator 111.

[0049] Figure 3 is a schematic structural diagram of the first type of manipulator in some specific embodiments of the present invention. With reference to Figure 1 and Figure 3 , the structures of the interface manipulator 141 and the cassette manipulator 111 are both the same as those of the first type of manipulator 30. The first type of manipulator 30 includes a vertical slide plate 31, a horizontal slide plate 32, and a fixed seat 33. On the upper surface of the fixed seat 33, there are a left end effector 331 and a right end effector 32 with the same orientation. A rotating shaft (not labeled in the figure) is provided inside the fixed seat 33, and the rotating shaft is driven by a motor (not labeled in the figure) to rotate the upper surface of the fixed seat 33, thereby driving the left end effector 331 and the right end effector 32 to rotate. The rotation direction of the rotating shaft is the same as the rotation direction of θ. The left end effector 331 and the right end effector 332 perform telescopic movement along the R1 direction. The vertical slide plate 31 is slidably connected to the horizontal slide plate 32 and is driven by a motor (not labeled in the figure) to drive the sliding seat to drive the vertical slide plate 31 to slide along the horizontal slide plate 32. The fixed seat 33 is slidably connected to the vertical slide plate 31 and is driven by a motor (not labeled in the figure) to drive the fixed seat 33 to slide along the vertical slide plate 31. The interface manipulator 141 and the cassette manipulator 111 are both well-known technologies in the art and will not be elaborated further.

[0050] Figure 4 is a schematic structural diagram of the in-layer process manipulator in some specific embodiments of the present invention. With reference to Figure 4, the in-layer process manipulator 40 includes a first vertical sliding part 41, a first horizontal sliding part 42 and a first actuator pedestal 43. The first vertical sliding part 41 and the first horizontal sliding part 42 are straight plate-shaped. Two horizontally parallel slide rails 421 are provided on the upper side of the first horizontal sliding part 42. Two first sliders (not marked in the figure) are provided on the lower side of the first vertical sliding part 41. The two first horizontal sliders are slidably connected to the two slide rails 421 one by one, and the two slide rails 421 are perpendicular to the first vertical sliding part 41. Two parallel first vertical slide rails 411 are provided on one side of the first vertical sliding part 41.

[0051] Figure 5 is a schematic structural diagram of the in-layer process manipulator in some specific embodiments of the present invention. Refer to Figure 5 , the in-layer process manipulator 50 includes a second vertical sliding part 51 and a second actuator pedestal 52. The second actuator pedestal 52 is slidably connected to the second vertical sliding part 51. The second vertical sliding part 51 is straight plate-shaped. Two parallel second vertical slide rails 511 are provided on one side of the second vertical sliding part 51.

[0052] In some embodiments of the present invention, the second in-layer process manipulator has the same structure as the first in-layer process manipulator, and the second actuator pedestal has the same structure as the first actuator pedestal.

[0053] Figure 6 is a schematic structural diagram of the first actuator pedestal in some specific embodiments of the present invention. Refer to Figure 4 and Figure 6 , the first actuator pedestal 43 includes a connecting part 431, a first actuator part 432 and a second actuator part 433. The connecting plate 431 includes a bearing part 4311 and a vertical connecting part 4312. The vertical connecting part 4312 is provided on one side of the bearing part 4311. Two second sliders (not marked in the figure) are provided on the side of the vertical connecting part 4312 facing away from the second actuator part 433. The two second sliders are slidably connected to the two first vertical slide rails 411 one by one.

[0054] In some preferred embodiments of the present invention, refer to Figure 6 , both the bearing part 4311 and the vertical connecting part 4312 are rectangular plate-shaped. The width of the vertical connecting part 4312 is smaller than the width of the bearing part 4311. One long side of the vertical connecting part 4312 is connected to one long side of the bearing part 4311 and has the same length.

[0055] In some preferred embodiments of the present invention, refer to Figure 4 and Figure 6, the vertical connecting portion 4312 is perpendicular to the bearing portion 4311, and the vertical connecting portion is parallel to the first vertical sliding portion 41, so that the bearing portion 4311 can move vertically while maintaining a horizontal state.

[0056] Referring to Figure 6 , an actuator slide rail 43111 is provided on the upper side of the bearing portion 4311. The number of the actuator slide rails 43111 is two. The first actuator 432 and the second actuator 433 are arranged on the upper sides of the two actuator slide rails 43111. Both the first actuator 432 and the second actuator 433 are parallel to the vertical connecting portion 4312. The second actuator 433 is fixedly connected to the actuator slide rail 43111. An actuator slider 4321 is provided on the lower side of the first actuator 432. The number of the actuator sliders 4321 is two, and the actuator sliders 4321 are slidably connected to the actuator slide rail 43111 in a one-to-one correspondence, so as to facilitate adjusting the assembly error between the first actuator 432 and the second actuator 433.

[0057] In some preferred embodiments of the present invention, referring to Figure 6 , the two actuator slide rails 43111 are respectively arranged along a short side of the bearing portion 4311, and the two actuator slide rails 43111 are both perpendicular to the vertical connecting portion 4312, so that the stroke of the two actuator slide rails 43111 is the shortest.

[0058] In some preferred embodiments of the present invention, referring to Figure 6 , the second actuator 433 is fixed to one end of the two actuator slide rails 43111, and a movable space is formed between the first actuator 432 and the second actuator 433, so that the first actuator 432 can move relative to the second actuator 433, which is convenient for adjusting the relative position between the first actuator 432 and the second actuator 433.

[0059] Referring to Figure 6, on the side of the first actuator 432 facing away from the second actuator 433, there are a first upper slideway 4322 and a first lower slideway 4323 that are parallel to each other. On the first upper slideway 4322, there is a first upper bending plate 43221, and the first upper bending plate 43221 is slidably connected to the first upper slideway 4322. On the first lower slideway 4323, there is a first lower bending plate 43231, and the first lower bending plate 43231 is slidably connected to the first lower slideway 4323. On the upper sides of the first upper bending plate 43221 and the first lower bending plate 43231, there is a first upper fixing plate 4324. The first upper bending plate 43221 and the first lower bending plate 43231 jointly fix the first upper fixing plate 4324 to increase the stability of the first upper fixing plate 4324 and prevent shaking. On one side of the first upper fixing plate 4324, there is a first group of end effectors 43241. The first group of end effectors 43241 includes a first end effector 432411 and a second end effector 432412. The first end effector 432411 and the second end effector 432412 are both well-known technologies in the art and will not be elaborated here.

[0060] In some preferred embodiments of the present invention, referring to Figure 6 , the first actuator 432 is a cuboid, and both the first upper bending plate 43221 and the first lower bending plate 43231 are L-shaped, enabling the first upper bending plate 43221 and the first lower bending plate 43231 to only adhere to one surface of the first actuator 432, thereby reducing the occupied space of the first upper bending plate 43221 and the first lower bending plate 43231.

[0061] In still other preferred embodiments of the present invention, referring to Figure 6 , the first upper slideway 4322 and the first lower slideway 4323 are cuboid slideways, and both the first upper slideway 4322 and the first lower slideway 4323 are parallel to the upper surface of the first actuator 432, enabling the first group of end effectors 43241 to perform horizontal movement.

[0062] In still other preferred embodiments of the present invention, referring to Figure 6 , at the end of the first upper bending plate 43221 connected to the first upper slideway 4322, there is a first embedded slider (not marked in the figure). The first embedded slider can slide within the first upper slideway 4322, reducing the friction between the first upper bending plate 43221 and the first upper slideway 4322 and facilitating the sliding of the first upper bending plate 43221.

[0063] In still other preferred embodiments of the present invention, referring to Figure 6, one end of the first downward bending plate 43231 connected to the first downward slideway 4323 is provided with a second embedded slider (not marked in the figure), and the second embedded slider can slide in the first downward slideway 4323 to reduce the friction between the first downward bending plate 43231 and the first downward slideway 4323, facilitating the sliding of the first downward bending plate 432331.

[0064] In some further preferred embodiments of the present invention, referring to Figure 6 , the first end effector 432411 and the second end effector 432412 are arranged on both sides of the same end of the first upper fixing plate 4324, and the first end effector 432411 and the second end effector 432412 are located in the same plane, so as to facilitate the simultaneous grasping or placing of two wafers.

[0065] Referring to Figure 6 , on the side of the second execution part 433 facing away from the first execution part 432, there are a second upper slideway (not marked in the figure) and a second downward slideway (not marked in the figure) that are parallel to each other. A second upper bending plate 4331 is arranged on the second upper slideway, and the second upper bending plate 4331 is slidably connected to the second upper slideway. A second downward bending plate 4332 is arranged on the second downward slideway, and the second downward bending plate 4332 is slidably connected to the second downward slideway. A second upper fixing plate 4333 is arranged on the upper sides of the second upper bending plate 4331 and the second downward bending plate 4332. The second upper bending plate 4331 and the second downward bending plate 4332 jointly fix the second upper fixing plate 4333 to increase the stability of the second upper fixing plate 4333 and prevent shaking. On one side of the second upper fixing plate 4333, there is a second group of end effectors 4334. The second group of end effectors 4334 includes a third end effector 43341 and a fourth end effector 43342. The third end effector 43341 and the fourth end effector 43342 are both well-known technologies in the art and will not be elaborated here.

[0066] In some preferred embodiments of the present invention, referring to Figure 6 , the second execution part 433 is a cuboid, and both the second upper bending plate 4331 and the second downward bending plate 4332 are L-shaped, enabling the second upper bending plate 4331 and the second downward bending plate 4332 to only adhere to one surface of the second execution part, thereby reducing the occupied space of the second upper bending plate 4331 and the second downward bending plate 4332.

[0067] In some further preferred embodiments of the present invention, referring to Figure 6, the second upper slideway and the second lower slideway are cuboid slideways, and both the second upper slideway and the second lower slideway are parallel to the upper surface of the second actuator part 433, so that the second set of end effectors 4334 can perform horizontal movement.

[0068] In some further preferred embodiments of the present invention, referring to Figure 6 , one end of the second upper bending plate 4331 connected to the second upper slideway is provided with a third embedded slider (not marked in the figure), and the third embedded slider can slide in the second upper slideway, reducing the friction between the second upper bending plate 4331 and the second upper slideway, and facilitating the sliding of the second upper bending plate 4331.

[0069] In some further preferred embodiments of the present invention, referring to Figure 6 , one end of the second lower bending plate 4332 connected to the second lower slideway is provided with a fourth embedded slider (not marked in the figure), and the fourth embedded slider can slide in the first lower slideway, reducing the friction between the second lower bending plate 4332 and the second lower slideway, and facilitating the sliding of the second lower bending plate 4332.

[0070] In some further preferred embodiments of the present invention, referring to Figure 6 , the third end effector 43341 and the fourth end effector 43342 are arranged on both sides of the same end of the second upper fixing plate 4333, and the third end effector 43341 and the fourth end effector 43342 are located in the same plane, so as to facilitate the simultaneous grasping or placing of two wafers.

[0071] Referring to Figure 6 , the extending direction of the first set of end effectors 43241 is opposite to the extending direction of the second set of end effectors 4334, and the first set of end effectors 43241 is located above the second set of end effectors 4334. There is a first height difference between the first set of end effectors 43241 and the second set of end effectors 4334, so that the first set of end effectors 43241 can overlap above the second set of end effectors 4334, making full use of the space in the vertical direction of the first actuator pedestal 43 and reducing the space occupied in the horizontal direction.

[0072] The above-mentioned manipulators are all driven by motors, and the motors provide the driving force for sliding.

[0073] In some preferred embodiments of the present invention, referring to Figure 1 and Figure 6, the first set of end effectors 43241 is located above the second set of end effectors 4334, and the distance between the horizontal plane where the highest point of the upper surface of the first set of end effectors 43241 is located and the horizontal plane where the highest point of the upper surface of the second set of end effectors 4334 is located is d, that is, the first height difference is d; the lowest point of the bottom surface of the first process module 12 is higher than the lowest point of the bottom surface of the second process module 13, and the distance between the two horizontal planes is d, that is, the second height difference is d; the first height difference is equal to the second height difference, and the overall structures, sizes, etc. of the first process module 12 and the second process module 13 are exactly the same. Therefore, the lowest point of the bottom surface of each sub-module in the first process module 12 is higher than the lowest point of the bottom surface of the corresponding sub-module in the second process module 13, and the height difference is also d, so that the first set of end effectors 43241 can complete the grasping and placement of the wafer from the sub-module in the first process module 12, and at the same time, the second set of end effectors 4334 can complete the grasping and placement of the wafer from the corresponding sub-module in the second process module 13.

[0074] In some preferred embodiments of the present invention, referring to Figure 6 , there is the same height difference between the first process module 12 and the second process module 13 as that between the first set of end effectors 43241 and the second set of end effectors 4334, that is, the first height difference is equal to the second height difference. When the first set of end effectors 43241 and the second set of end effectors 4334 grasp or place the wafer, when the height of the sub-module in the second process module 13 is adapted to the height of the second set of end effectors 4334, there is no need to specially set a thimble mechanism in the first process module 12 to raise the position of the sub-module to adapt to the first set of end effectors 43241, or when the height of the sub-module in the first process module 12 is adapted to the height of the first set of end effectors 43241, there is no need to specially set a thimble mechanism in the second process module 13 to lower the position of the sub-module to adapt to the second set of end effectors 4334, making the process control simple.

[0075] Figure 7 For Figure 1 is a cross-sectional view along the A-A' direction. Referring to Figure 7, the first interlayer process unit 1211 includes a first high-precision wafer transfer cooling control unit group 12111, a first wafer transfer unit group 12112, a second wafer transfer unit group 12113, a second high-precision wafer transfer cooling control unit group 12114, an adhesion increasing unit group 12115, a wafer defect detection unit group 12116, and a third high-precision wafer transfer cooling control unit group 12117. The first wafer transfer unit group 12112 is disposed above the first high-precision wafer transfer cooling control unit group 12111. The second wafer transfer unit group 12113 is disposed above the first wafer transfer unit group 12112. The second high-precision wafer transfer cooling control unit group 12114 is disposed above the second wafer transfer unit group 12113. The adhesion increasing unit group 12115 is disposed above the second high-precision wafer transfer cooling control unit group 12114. The wafer defect detection unit group 12116 is disposed above the adhesion increasing unit group 12115. The third high-precision wafer transfer cooling control unit group 12117 is disposed above the wafer defect detection unit group 12116.

[0076] In some embodiments of the present invention, referring to Figure 7 , the first in-layer transfer unit (not labeled in the figure) is internally provided with a first high-precision cooling control unit group 12121, and the first high-precision cooling control unit group 12121 is connected to the adhesion increasing unit group 12115.

[0077] In some embodiments of the present invention, referring to Figure 7 , the first in-layer process unit 1221 includes a first high-height in-layer process unit 12211, a second high-height in-layer process unit 12212, and a third high-height in-layer process unit 12213. The second high-height in-layer process unit 12212 is disposed above the first high-height in-layer process unit 12211. The third high-height in-layer process unit 12213 is disposed above the second high-height in-layer process unit 12212.

[0078] In some embodiments of the present invention, the first high-height in-layer process unit includes an anti-reflective bottom layer coating unit group and a photoresist coating unit group. The photoresist coating unit group is disposed above the anti-reflective bottom layer coating unit group.

[0079] In some embodiments of the present invention, the second high-height in-layer process unit includes an anti-reflective top layer coating unit group and a wafer backside cleaning unit group. The wafer backside cleaning unit group is disposed above the anti-reflective top layer coating unit group.

[0080] In some embodiments of the present invention, the third high-height in-layer process unit includes a first developing unit group.

[0081] In some embodiments of the present invention, refer to Figure 7 , the second in-layer process unit 1222 includes a fourth-height in-layer process unit 12221, a fifth-height in-layer process unit 12222, and a sixth-height in-layer process unit 12223. The fifth-height in-layer process unit 12222 is disposed above the fourth-height in-layer process unit 12221, and the sixth-height in-layer process unit 12223 is disposed above the fifth-height in-layer process unit 12222.

[0082] In some embodiments of the present invention, the fourth-height in-layer process unit includes a high-temperature heat treatment unit group and a first heat treatment unit group. The first heat treatment unit group is disposed above the high-temperature heat treatment unit group.

[0083] In some embodiments of the present invention, the fifth-height in-layer process unit includes a second heat treatment unit group and an edge exposure unit group. The edge exposure unit group is disposed above the second heat treatment unit group.

[0084] In some embodiments of the present invention, the sixth-height in-layer process unit includes a second development unit group and a third heat treatment unit group. The third heat treatment unit group is disposed above the second development unit group.

[0085] In some embodiments of the present invention, refer to Figure 7 , the second inter-layer process unit 1231 includes a third wafer transfer unit group 12311, a wafer surface cleaning unit group 12312, a fourth wafer transfer unit group 12313, a fourth heat treatment unit group 12314, and a fourth wafer transfer high-precision cooling control unit group 12315. The wafer surface cleaning unit group 12312 is disposed above the third wafer transfer unit group 12311, the fourth wafer transfer unit group 12313 is disposed above the wafer surface cleaning unit group 12312, the fourth heat treatment unit group 12314 is disposed above the fourth wafer transfer unit group 12313, and the fourth wafer transfer high-precision cooling control unit group 12315 is disposed above the fourth heat treatment unit group 12314.

[0086] In some embodiments of the present invention, refer to Figure 7 , the second in-layer transfer unit (not labeled in the figure) includes a second high-precision cooling control unit group 12321, and the second high-precision cooling control unit group 12321 is connected to the high-temperature heat treatment unit group (not labeled in the figure).

[0087] In some embodiments of the present invention, the in-layer 1 process manipulator, the in-layer 1 process unit at the first height layer, and the in-layer 4 process unit at the fourth height layer are located in the same horizontal plane, and the end effector on the in-layer 1 process manipulator can reach any position of the in-layer 1 process unit at the first height layer and the in-layer 4 process unit at the fourth height layer. The in-layer 2 process manipulator, the in-layer 2 process unit at the second height layer, and the in-layer 5 process unit at the fifth height layer are located in the same horizontal plane, and the end effector on the in-layer 2 process manipulator can reach any position of the in-layer 2 process unit at the second height layer and the in-layer 5 process unit at the fifth height layer. The in-layer 3 process manipulator, the in-layer 3 process unit at the third height layer, and the in-layer 6 process unit at the sixth height layer are located in the same horizontal plane, and the end effector of the in-layer 3 process manipulator can reach any position of the in-layer 3 process unit at the third height layer and the in-layer 6 process unit at the sixth height layer.

[0088] In some embodiments of the present invention, the first wafer transfer high-precision cooling control unit group, the second wafer transfer high-precision cooling control unit group, the third wafer transfer high-precision cooling control unit group, and the fourth wafer transfer high-precision cooling control unit group each include at least two wafer transfer high-precision cooling control units. Specifically, the first wafer transfer high-precision cooling control unit group, the second wafer transfer high-precision cooling control unit group, the third wafer transfer high-precision cooling control unit group, and the fourth wafer transfer high-precision cooling control unit group each include two wafer transfer high-precision cooling control units. The first wafer transfer high-precision cooling control unit group, the second wafer transfer high-precision cooling control unit group, and the third wafer transfer high-precision cooling control unit group extend from the inter-layer 1 process unit to the in-layer 1 transfer unit. The fourth wafer transfer high-precision cooling control unit group extends from the inter-layer 2 process unit to the in-layer 2 transfer unit. The wafer transfer high-precision cooling control unit is a well-known technology in the art, and details are not described herein.

[0089] In some embodiments of the present invention, the first wafer transfer unit group and the third wafer transfer unit group each include at least two wafer transfer units. Specifically, the first wafer transfer unit group and the third wafer transfer unit group each include two wafer transfer units. The first wafer transfer unit group extends from the inter-layer 1 process unit to the in-layer 1 transfer unit, and the first high-precision cooling control unit group is disposed above the first wafer transfer unit group. The third wafer transfer unit extends from the inter-layer 2 process unit to the in-layer 2 transfer unit.

[0090] In some embodiments of the present invention, the second wafer transfer unit group and the fourth wafer transfer unit group include at least two wafer transfer units. Specifically, both the first wafer transfer unit group and the third wafer transfer unit group include two such wafer transfer units. The wafer transfer unit is a well-known technology in the art, and details are not elaborated herein.

[0091] In some embodiments of the present invention, the first high-precision cooling control unit group and the second high-precision cooling control unit group include at least two high-precision cooling control units. Specifically, both the first high-precision cooling control unit group and the second high-precision cooling control unit group include two such high-precision cooling control units. The high-precision cooling control unit is a well-known technology in the art, and details are not elaborated herein.

[0092] In some embodiments of the present invention, the tackifying unit group includes at least two tackifying units. Specifically, the tackifying unit group includes four such tackifying units. The tackifying unit is a well-known technology in the art, and details are not elaborated herein.

[0093] In some embodiments of the present invention, the wafer defect detection unit group includes at least two wafer defect detection units. Specifically, the wafer defect detection unit group includes two such wafer defect detection units. The wafer defect detection unit is a well-known technology in the art, and details are not elaborated herein.

[0094] In some embodiments of the present invention, the anti-reflective bottom layer coating unit group includes at least two wafer defect detection units. Specifically, the anti-reflective bottom layer coating unit group includes two such wafer defect detection units. The wafer defect detection unit is a well-known technology in the art, and details are not elaborated herein.

[0095] In some embodiments of the present invention, the photoresist coating unit group includes at least two photoresist coating units. Specifically, the photoresist coating unit group includes two such photoresist coating units. The photoresist coating unit is a well-known technology in the art, and details are not elaborated herein.

[0096] In some embodiments of the present invention, the anti-reflective top layer coating unit group includes at least two anti-reflective top layer coating units. Specifically, the anti-reflective top layer coating unit group includes two such anti-reflective top layer coating units. The anti-reflective top layer coating unit is a well-known technology in the art, and details are not elaborated herein.

[0097] In some embodiments of the present invention, the wafer backside cleaning unit group includes at least two wafer backside cleaning units. Specifically, the wafer backside cleaning unit group includes two such wafer backside cleaning units. The wafer backside cleaning unit is a well-known technology in the art, and details are not elaborated herein.

[0098] In some embodiments of the present invention, both the first developing unit group and the second developing unit group include at least two developing units. Specifically, the first developing unit group includes four such developing units, and the second developing unit group includes two such developing units. The developing unit is a well-known technology in the art, and details are not elaborated herein.

[0099] In some embodiments of the present invention, the high-temperature heat treatment unit group includes at least two high-temperature heat treatment units. Specifically, the high-temperature heat treatment unit group includes six such high-temperature heat treatment units. The high-temperature heat treatment unit is a well-known technology in the art, and details are not elaborated herein.

[0100] In some embodiments of the present invention, each of the first heat treatment unit group, the second heat treatment unit group, the third heat treatment unit group, and the fourth heat treatment unit group includes at least two heat treatment units. Specifically, each of the first heat treatment unit group, the second heat treatment unit group, the third heat treatment unit group, and the fourth heat treatment unit group includes six such heat treatment units. The heat treatment unit is a well-known technology in the art, and details are not elaborated herein.

[0101] In some embodiments of the present invention, the edge exposure unit group includes at least two edge exposure units. Specifically, the edge exposure unit group includes six such edge exposure units. The edge exposure unit is a well-known technology in the art, and details are not elaborated herein.

[0102] In some embodiments of the present invention, the wafer surface cleaning unit group includes at least two wafer surface cleaning units. Specifically, the wafer surface cleaning unit group includes two such wafer surface cleaning units. The wafer surface cleaning unit is a well-known technology in the art, and details are not elaborated herein.

[0103] In the present invention, the first process module and the second process module have the same structure, and the process flows of the first process module and the second process module are the same. Only the process flow of the first process module is described herein.

[0104] When the present invention works, refer to Figure 1 、 Figure 2 and Figure 7 , and the specific process is as follows:

[0105] The cassette group 112 contains wafers. The cassette manipulator 111 grabs a wafer from the cassette group 112, transfers the wafer into the first wafer transfer unit group 12112, and then the first interlayer process manipulator 15 transfers the wafer to the adhesion enhancement unit group 12115 to complete the adhesion enhancement process. After completing the adhesion enhancement process, the first interlayer process manipulator 15 transfers the wafer to the first wafer transfer high-precision cooling control unit group 12111;

[0106] The in-layer process manipulator 161 of the first layer grabs a wafer from within the first wafer transfer high-precision cooling control unit group 12111, and then sequentially transfers the wafer to the anti-reflective bottom layer coating unit group, the high-temperature heat treatment unit group, the second high-precision cooling control unit group 12321, the photoresist coating unit group, the first heat treatment unit group, and the first wafer transfer unit group 12112;

[0107] The first inter-layer process manipulator 15 grabs a wafer from the first wafer output unit group 12112, and then transfers the wafer to the second wafer transfer high-precision cooling control unit group 12114;

[0108] The in-layer process manipulator 162 of the second layer grabs a wafer from within the second wafer transfer high-precision cooling control unit group 12114, and then sequentially transfers the wafer to the anti-reflective top layer coating unit group, the second heat treatment unit group, the first high-precision cooling control unit group 12121, the edge exposure unit group, the wafer backside cleaning unit group, and the fourth wafer transfer unit group 12313;

[0109] The interface manipulator 141 grabs a wafer from within the fourth wafer transfer unit group 12313, and then transfers the wafer into a lithography machine to complete the lithography process. After the lithography process is completed, the interface manipulator 141 grabs the wafer from the lithography machine, and then transfers the wafer to the fourth wafer transfer unit group 12313;

[0110] The second inter-layer process manipulator 17 grabs a wafer from within the fourth wafer transfer unit group 12313, and then sequentially transfers the wafer to the wafer surface cleaning unit group 12312, the fourth heat treatment unit group 12314, and the fourth wafer transfer high-precision cooling control unit group 12315;

[0111] The in-layer process manipulator 163 of the third layer grabs a wafer from within the fourth wafer transfer high-precision cooling control unit group 12315, and then sequentially transfers the wafer to the second development unit group, the third heat treatment unit group, and the third wafer transfer high-precision cooling control unit group 12117;

[0112] The first inter-layer process manipulator 15 grabs a wafer from within the third wafer transfer high-precision cooling control unit group 12117, and then sequentially transfers the wafer to the wafer defect detection unit group 12116 and the second wafer transfer unit group 12113;

[0113] The cassette manipulator 111 grabs a wafer from within the second wafer transfer unit group 12113, and then transfers the wafer to the cassette group 112 to complete one lithography process flow.

[0114] Although the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are all within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. A glue coating and developing device, characterized in that, It includes a cassette module, a first process module, a second process module and an interface module. One end of the first process module and the second process module is connected to the cassette module, and the other end of the first process module and the second process module is connected to the interface module. A first interlayer process manipulator, an in-layer process manipulator group and a second interlayer process manipulator are arranged between the first process module and the second process module. The manipulators in the first interlayer process manipulator, the second interlayer process manipulator and the in-layer process manipulator group all have two sets of end effectors with opposite orientations, and the number of each set of end effectors is m, where m is a natural number greater than or equal to 2; The in-layer process manipulator group includes, from bottom to top, a first in-layer process manipulator, a second in-layer process manipulator and a third in-layer process manipulator with the same structure; The first in-layer process manipulator includes a first vertical sliding part, a first horizontal sliding part and a first actuator pedestal. The first vertical sliding part is arranged on the upper side of the first horizontal sliding part, and the first vertical sliding part is slidably connected to the first horizontal sliding part. The first actuator pedestal is arranged on one side of the first vertical sliding part; The cassette module includes a cassette manipulator and a cassette group. The cassette manipulator is arranged between the cassette group and the first process module.

2. The glue coating and developing device according to claim 1, wherein The first actuator pedestal includes a connecting part, a first execution part and a second execution part.

3. The glue coating and developing device according to claim 2, wherein, The connecting part includes a bearing part and a vertical connecting part. The vertical connecting part is arranged on one side of the bearing part, and the vertical connecting part is slidably connected to the first vertical sliding part.

4. The glue coating and developing device according to claim 3, wherein, An actuator slide rail is arranged on the upper side of the bearing part. The actuator slide rail is perpendicular to the vertical connecting part. The first execution part and the second execution part are arranged on the upper side of the actuator slide rail, and both the first execution part and the second execution part are parallel to the vertical connecting part. The second execution part is fixedly connected to the actuator slide rail. An actuator slider is arranged on the lower side of the first execution part, and the actuator slider is slidably connected to the actuator slide rail.

5. The glue coating and developing device according to claim 4, characterized in that, A first upper slideway and a first lower slideway are arranged on the side of the first execution part facing away from the second execution part. A first upper bending plate is arranged on the first upper slideway, and the first upper bending plate is slidably connected to the first upper slideway. A first lower bending plate is arranged on the first lower slideway, and the first lower bending plate is slidably connected to the first lower slideway. A first upper fixing plate is arranged on the upper sides of the first upper bending plate and the first lower bending plate. A first group of end effectors is arranged on one side of the first upper fixing plate.

6. The glue coating and developing device according to claim 5, characterized in that, A second upper slideway and a second lower slideway are arranged on the side of the second execution part facing away from the first execution part. A second upper bending plate is arranged on the second upper slideway, and the second upper bending plate is slidably connected to the second upper slideway. A second lower bending plate is arranged on the second lower slideway, and the second lower bending plate is slidably connected to the second lower slideway. A second upper fixing plate is arranged on the upper sides of the second upper bending plate and the second lower bending plate. A second group of end effectors is arranged on one side of the second upper fixing plate.

7. The glue coating and developing device according to claim 6, characterized in that, The extending direction of the first set of end effectors is opposite to that of the second set of end effectors, and there is a first height difference between the first set of end effectors and the second set of end effectors.

8. The glue coating and developing device according to claim 7, characterized in that There is a second height difference between the first process module and the second process module, and the first height difference is equal to the second height difference.

9. The glue coating and developing device according to claim 7, wherein, The first set of end effectors includes a first end effector and a second end effector, and the second set of end effectors includes a third end effector and a fourth end effector.

10. The glue coating and developing device according to claim 1, wherein, The first interlayer process manipulator and the second interlayer process manipulator have the same structure. The first interlayer process manipulator includes a second vertical sliding part and a second actuator pedestal, and the second actuator pedestal has the same structure as the first actuator pedestal.

11. The glue coating and developing device according to claim 10, wherein, The cassette manipulator includes n end effectors with the same orientation, where n is a natural number greater than or equal to 2.

12. The glue coating and developing device according to claim 11, wherein, The interface module is internally provided with an interface manipulator, and the interface manipulator has the same structure as the cassette manipulator.

13. The glue coating and developing device according to claim 1, wherein The first process module and the second process module have the same structure. The first process module includes an interlayer process module, an in-layer process module, and a second interlayer process module arranged in sequence.

14. The glue coating and developing device according to claim 13, characterized in that, The first interlayer process module includes a first interlayer process unit and a first in-layer transfer unit, and the first interlayer process unit is located between the cassette module and the first in-layer transfer unit.

15. The glue coating and developing device according to claim 14, characterized in that, The first interlayer process unit includes, from bottom to top, a first wafer transfer high-precision cooling control unit group, a first wafer transfer unit group, a second wafer transfer unit group, a second wafer transfer high-precision cooling control unit group, an adhesion enhancement unit group, a wafer defect detection unit group, and a third wafer transfer high-precision cooling control unit group.

16. The glue coating and developing device according to claim 15, characterized in that, The first in-layer transfer unit is internally provided with a first high-precision cooling control unit group, and the first high-precision cooling control unit group is connected to the adhesion enhancement unit group.

17. The glue coating and developing device according to claim 13, wherein The in-layer process module includes a first in-layer process unit and a second in-layer process unit. The first in-layer process unit is connected to the first interlayer process module, and the second in-layer process unit is connected to the second interlayer process module.

18. The glue coating and developing device according to claim 17, wherein The first in-layer process unit includes, from bottom to top, a first height in-layer process unit, a second height in-layer process unit, and a third height in-layer process unit.

19. The glue coating and developing device according to claim 18, wherein, The first height in-layer process unit includes, from bottom to top, an anti-reflection bottom coating unit group and a photoresist coating unit group. The second height in-layer process unit includes, from bottom to top, an anti-reflection top coating unit group and a wafer backside cleaning unit group. The third height in-layer process unit includes a first development unit group.

20. The glue coating and developing device according to claim 18, characterized in that, The second in-layer process unit includes, from bottom to top, a fourth height in-layer process unit, a fifth height in-layer process unit, and a sixth height in-layer process unit.

21. The glue coating and developing device according to claim 20, wherein, The fourth height in-layer process unit includes, from bottom to top, a high-temperature heat treatment unit group and a first heat treatment unit group. The fifth height in-layer process unit includes, from bottom to top, a second heat treatment unit group and an edge exposure unit group. The sixth height in-layer process unit includes, from bottom to top, a second development unit group and a third heat treatment unit group.

22. The glue coating and developing device according to claim 21, wherein The second interlayer process module includes a second interlayer process unit and a second in-layer transfer unit. The second interlayer process unit is connected to the interface module, and the second in-layer transfer unit is connected to the in-layer process module.

23. The glue coating and developing device according to claim 22, wherein The second interlayer process unit includes, from bottom to top, a third wafer transfer unit group, a wafer surface cleaning unit group, a fourth wafer transfer unit group, a fourth heat treatment unit group, and a fourth wafer transfer high-precision cooling control unit group.

24. The glue coating and developing device according to claim 22, wherein, The second in-layer transfer unit includes a second high-precision cooling control unit group, and the second high-precision cooling control unit group is connected to the high-temperature heat treatment unit group.

25. The glue coating and developing device according to claim 20, wherein, The first in-layer process manipulator, the first high-level in-layer process unit, and the fourth high-level in-layer process unit are located in the same horizontal plane. The second in-layer process manipulator, the second high-level in-layer process unit, and the fifth high-level in-layer process unit are located in the same horizontal plane. The third in-layer process manipulator, the third high-level in-layer process unit, and the sixth high-level in-layer process unit are located in the same horizontal plane.

Images