Components that progressively heat a substrate using a heater based on a TCR element

Abstract

A heater control system for a heating component of a substrate processing system includes N heater zones, where N is an integer greater than zero. Each of the N heater zones heats a component of the substrate processing system and includes a resistive heater and a temperature sensor for sensing a local temperature of a corresponding heater zone in the N heater zones. A controller is configured to determine an average temperature of each of the N heater zones based on a resistance of the resistive heater in each of the N heater zones. The controller controls the resistive heater based on the average temperature and the local temperature of each of the N heater zones.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Patent Application No. 16 / 058,216 filed on August 8, 2018. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to substrate processing systems, and more particularly to progressively heating components of substrate processing systems utilizing both thermocouples and temperature coefficient of resistance (TCR) heaters. Background Art

[0004] The background description provided here is for the purpose of generally presenting the context of the present disclosure. The work of the presently designated inventors is neither explicitly nor implicitly admitted to be prior art against the present disclosure to the extent that it is described in this background section and in aspects of the specification that were not determined to be prior art at the time the application was filed.

[0005] The substrate processing system can be used to perform etching, deposition and / or other processing on a substrate such as a semiconductor wafer. Exemplary processes that can be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), atomic layer etching (ALE), plasma enhanced atomic layer deposition (PEALD) and / or other etching, deposition and cleaning processes. During processing, the substrate is arranged on a substrate support, such as a pedestal, an electrostatic chuck (ESC), etc., in a processing chamber of the substrate processing system. A process gas mixture is supplied to the processing chamber to process the substrate. In some examples, a plasma can be excited to enhance chemical reactions in the processing chamber.

[0006] The gas supply line supplies the gas mixture to the process chamber. If the temperature of the gas mixture in the gas supply line is not carefully controlled, condensation of the gas mixture may occur on the walls of the gas supply line. Condensation of the gas mixture may cause defects and is often difficult to remove. Summary of the invention

[0007] A heater control system for a heating component of a substrate processing system includes N heater zones, where N is an integer greater than zero. Each of the N heater zones heats a component of the substrate processing system and includes a resistive heater and a temperature sensor for sensing a local temperature of a corresponding heater zone in the N heater zones. A controller is configured to determine an average temperature of each of the N heater zones based on a resistance of the resistive heater in each of the N heater zones. The controller controls the resistive heater based on the average temperature and the local temperature of each of the N heater zones.

[0008] In other features, the controller is configured to selectively control the power supplied to the resistive heater in each of the N heater zones based on the local temperature, and selectively override the power supplied to the resistive heater in each of the N heater zones based on the average temperature.

[0009] In other features, the controller is configured to selectively control the power supplied to the resistive heater in each of the N heater zones based on the average temperature, and to selectively override the power supplied to the resistive heater in each of the N heater zones based on the local temperature.

[0010] In other features, a current sensor senses current supplied to each of the N heater zones. The controller determines the resistance of each of the N heater zones based on the current.

[0011] In other features, a voltage sensor senses a voltage supplied to each of the N heater zones. The controller determines the resistance of each of the N heater zones based on the voltage.

[0012] In other features, a heater driver drives one of the N heater zones based on a duty cycle. A resistance estimation device estimates the resistance of the one of the N heater zones based on the duty cycle. The controller determines the local temperature of the one of the N heater zones based on the resistance.

[0013] In other features, the controller is configured to: selectively control the power supplied to the resistive heater in each of the N heater zones based on the local temperature; and selectively override the power supplied to the resistive heater in each of the N heater zones when the average temperature is outside a predetermined temperature range.

[0014] In other features, the controller is configured to control the power supplied to the resistive heater in each of the N heater zones based on at least one of a default duty cycle and a default power level when the average temperature is outside the predetermined temperature range.

[0015] In other features, the controller is configured to: selectively control the power supplied to the resistive heater in each of the N heater zones based on the average temperature; and selectively override the power supplied to the resistive heater in each of the N heater zones based on the local temperature.

[0016] In other features, the controller is configured to increase power supplied to the resistive heater in each of the N heater zones when the local temperature is below a predetermined temperature.

[0017] In other features, the N heater zones are disposed around a plurality of gas lines from a source to a process chamber. The N heater zones provide a progressive heating profile from the source to the process chamber.

[0018] A heater control system for a gas delivery system of a substrate processing system includes an oven for surrounding one or more components of the substrate processing system and maintaining a predetermined temperature in the oven. N resistive heaters are disposed in the oven, where N is an integer greater than 1. Each of the N resistive heaters selectively heats at least a portion of one of the components in the oven. The N resistive heaters are not insulated. A controller is configured to maintain the predetermined temperature in a localized area in the oven by determining a resistance in each of the N resistive heaters and adjusting a power of each of the N resistive heaters based on a resistance ratio of N-1 of the N resistive heaters compared to one of the N resistive heaters.

[0019] In other features, a first temperature sensor is positioned away from the N resistive heaters to sense a temperature in the oven. The oven includes a heating element. The controller determines an average temperature in the oven based on the first temperature sensor, and controls the heating element in the oven to maintain the predetermined temperature based on the average temperature.

[0020] In other features, the N-1 resistance ratios are determined at the predetermined temperature. The predetermined temperature is ambient temperature. The controller is further configured to adjust the N-1 resistance ratios to provide progressive heating. The component includes at least one of a gas line and a valve in a gas flow path.

[0021] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0023] Figure 1 is a functional block diagram of an example of a substrate processing system according to the present disclosure;

[0024] Figures 2A to 2C is a functional block diagram of an example of a heating system according to the present disclosure;

[0025] Figure 3 is a graph illustrating temperature as a function of length along a gas flow path to a processing chamber;

[0026] Figure 4 An example of a heater zone containing a thermocouple is illustrated;

[0027] Figure 5 and 6 is a graph illustrating the functional relationship of temperature to the length along a gas flow path in a zone;

[0028] Figure 7 and 8 is a flow chart illustrating an example of a method according to the present disclosure for controlling temperature in a gas flow path using a thermocouple and a TCR heater in each of a plurality of heater zones;

[0029] Fig. 9 is a functional block diagram of a heating system including an oven surrounding a gas flow path and an uninsulated TCR heater disposed in one or more locations;

[0030] Fig.10 For operation Fig. 9 A flow chart of a method of heating a system.

[0031] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0032] Progressive heating can be used to overcome the risk of condensation in gas lines. However, the temperature measured by thermocouples at positions along the gas line cannot capture load-based changes across the entire heater zone. Pressure conversion and / or load changes caused by factors such as expansion, valves, etc. can cause local temperature changes. In addition, pipelines / heaters designed for one application are often used for another application and the temperature distribution may change. If a thermocouple (TC) is located at a position where the pressure is reduced / expanded, the thermocouple will sense low temperatures, and the gas line may be heated hotter than expected. If the thermocouple is positioned away from the pressure drop, local cooling may occur. A possible solution is to increase the number of heater zones. However, this solution will increase costs (caused by more connections) and challenges to service capabilities.

[0033] A heating system for a gas delivery system according to the present disclosure uses a heater including a TCR heater element. In some examples, the TCR heater element has a high TCR above 0.001 ppm / °C. By way of example only, a molybdenum or tungsten (W) heater element may be used. In other examples, the TCR heater element has a lower TCR below 0.001 ppm / °C. By way of example only, copper or nickel may be used.

[0034] The resistance of a TCR-based heater can be measured to provide an average temperature in a heater zone. A controller can be used to correlate resistance and temperature using a lookup table or formula. The temperature in each zone is also monitored using a TC to provide a local temperature (representing a point location in the heater zone). In some examples, the TC is located at the start or end of a heater zone to measure the sensed temperature at that location. As will be explained further below, a combination of primary control and secondary override / monitoring can be performed using feedback from the TCR heater and TC from each heater zone.

[0035] In a first approach, the temperature sensed by the TC is used as the control set point for the heater zone and the average temperature sensed by the TCR heater is used as a monitor / override. If the average temperature of the heater zone falls below or exceeds a specific value, the controller uses a default duty cycle. An acceptable range of average values ​​may be specified on a per-zone basis to increase along the gas flow path in a stepwise or monotonically manner. In some examples, TCR heaters use high TCR elements. In other examples, TCR heaters use low TCR elements due to the use of average values ​​as a safety check / override.

[0036] In a second approach, the average temperature sensed by the TCR heater is used as the control variable. If there is a local temperature drop in a section of the heater zone due to expansion-related cooling, the entire heater zone can be heated hotter. In some examples, a local TC can be set near the expansion point to monitor and override if necessary. If there is cooling at the location monitored by the TC, a limited stop is triggered and heat is increased in advance.

[0037] In both methods, the average temperature ensures progressive heating. Local temperature measurements from the TC allow the heating system to react to local changes. The control system described above avoids overreactions by the heating system, which could cause overheating in the heater zone.

[0038] In some examples, fewer heater zones are used to cover a larger area. In other examples, TCs are set only at expected expansion zones to address specific condensation risks, but the remaining heating zones are part of a single large zone.

[0039] Reference now Figure 1 , an exemplary substrate processing system 120 is shown. Although a processing chamber using capacitively coupled plasma (CCP) for chemical vapor deposition (CVD) or atomic layer deposition (ALD) is shown for illustrative purposes, any other type of substrate processing system may be used.

[0040] The substrate processing system 120 includes a processing chamber 122 that surrounds the other components of the substrate processing system 120 and contains an RF plasma (if used). The substrate processing system 120 includes an upper electrode 124 and a substrate support 126, such as an electrostatic chuck (ESC), a pedestal, etc. During operation, a substrate 128 is disposed on the substrate support 126.

[0041] By way of example only, the upper electrode 124 may include a gas distribution device 129, such as a showerhead, which introduces and distributes the process gas. The gas distribution device 129 may include a stem portion including one end connected to the top surface of the process chamber. The base portion is generally cylindrical and extends radially outward from the opposite end of the stem portion at a position spaced apart from the top surface of the process chamber. The surface or faceplate of the base portion of the showerhead facing the substrate includes a plurality of holes for allowing precursors, reactants, etching gases, inert gases, carrier gases, other process gases, or purge gases to flow through. Alternatively, the upper electrode 124 may include a conductive plate and the process gas may be introduced in another manner.

[0042] The substrate support 126 includes a base plate 130 that serves as a lower electrode. The base plate 130 supports a heating plate 132, which may correspond to a ceramic multi-zone heating plate. A thermal resistance layer 134 may be arranged between the heating plate 132 and the base plate 130. The base plate 130 may include one or more channels 136 for flowing a coolant through the base plate 130.

[0043] If plasma is used, the RF generation system 140 generates an RF voltage and outputs the RF voltage to one of the upper electrode 124 and the lower electrode (e.g., the substrate 130 of the substrate support 126). The other of the upper electrode 124 and the substrate 130 can be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 140 can include an RF generator 142 that generates RF power that is fed to the upper electrode 124 or the substrate 130 by a matching and distribution network 144. In other examples, the plasma can be generated inductively or remotely.

[0044] The gas delivery system 150 includes one or more gas sources 152-1, 152-2, ... and 152-N (collectively referred to as gas sources 152), where N is an integer greater than zero. The gas sources 152 are connected to the manifold 160 through primary valves 154-1, 154-2, ... and 154-N (collectively referred to as primary valves 154) and MFCs 156-1, 156-2, ... and 156-N (collectively referred to as MFCs 156) and / or secondary valves (not shown). Although a single gas delivery system 150 is shown, two or more gas delivery systems may be used.

[0045] The temperature controller 163 is connected to a plurality of resistive heaters 164 disposed in the heating plate 132. The temperature controller 163 may also be connected to one or more thermocouples 165 disposed in the heating plate 132. The temperature controller 163 may be used to control the plurality of resistive heaters 164 to adjust and control the temperature of the substrate support 126 and the substrate 128. In some examples, a vapor delivery system 167 supplies vapor to the processing chamber.

[0046] In some examples, the temperature controller 163 and / or other controllers can also communicate with the coolant assembly 166 to control the coolant flowing through the channel 136. For example, the coolant assembly 166 can include a coolant pump, a reservoir, and / or one or more thermocouples. In some examples, the temperature controller 163 operates the coolant assembly 166 to selectively flow the coolant through the channel 136 to cool the substrate support 126.

[0047] A valve 170 and a pump 172 may be used to evacuate reactants from the process chamber 122. A system controller 180 may be used to control the components of the substrate processing system 120.

[0048] Reference now Figure 2A , which shows a heating system for a vapor delivery system 167 according to the present disclosure. Although the heating system in FIG. 2 is shown as including an ampoule 200 for supplying vaporized precursor, the heating system can heat other components of the substrate processing system. A temperature sensor 214 monitors the temperature of the precursor. A heater 218 is used to heat the liquid precursor based on the sensed temperature and the desired temperature. The controller 180 or other controller can be used to monitor the temperature sensor 214 and control the heater 218 based on the measured temperature and the desired temperature.

[0049] Valves V214, V205, and V213 selectively supply carrier gas or a mixture of carrier gas and vaporized precursor to the gas flow path. Additional valves V220, V206A, V206B, V71, V55, V79, V65, V164, and V207 are provided to control the flow of gas along various gas flow paths. Multiple heater zones 250-1, 250-2, 250-N (collectively referred to as heater zones 250) (where N is an integer greater than 1) are used to heat gas lines, valves, and / or other components along the gas flow path.

[0050] Reference now Figure 2B , the operation of the heater zones 250 may be controlled using a controller 280. Power may be supplied to the TCR heaters 283 using a heater driver 282. The temperature in the plurality of heater zones 250 may be sensed using one or more temperature sensors or thermocouples 284. The current supplied to the TCR heaters by the heater driver 282 may be sensed using a current sensor 288. The voltage supplied to the TCR heaters by the heater driver 282 may be sensed using a voltage sensor 290.

[0051] Reference now Figure 2C , the operation of the heater zone 250 can be controlled using the controller 280. In this example, the current sensor 288 and the voltage sensor 290 are omitted and the resistance estimation device 294 is used to monitor the duty cycle of the heater zone 250 and estimate the resistance of the heater zone 250 based on the corresponding duty cycle. In this example, it is assumed that the voltage or current is a constant value and the duty cycle of the current or voltage varies. In other words, the controller 280 estimates the resistance based on the known voltage or current and the duty cycle of the current or voltage.

[0052] Reference now Figure 3 , illustrates the ideal temperature as a function of the length along the gas flow path to the process chamber. In some applications, it is desirable that the temperature of the gas flow path increases monotonically as the gas passes through the multiple heater zones 250. If the temperature decreases, condensation may occur. Figure 3In FIG. 1 , the ideal temperature characteristic is shown as a straight line with a positive slope. In reality, however, the temperature of the gas flowing through the gas flow path may be less than ideal due to local heating or cooling. For example, the gas cools as it flows through a pressure drop / expansion location.

[0053] Reference now Figure 4 , which illustrates an example of a heater zone 400. The heater zone 400 includes a first gas line 410, which is connected to a second gas line 420 at a node 430 near a transition / fitting 434. The insulated heater 440 includes an insulating material 442 and a heater element 444. The temperature of each heater zone of the plurality of heater zones can be monitored using a thermocouple. For example, the thermocouple TC can be disposed at a first location TC p1 or second position TC p2 However, different temperature control characteristics will occur, depending on the selected position of the thermocouple TC.

[0054] Reference now Figure 5 and 6 , which illustrates the temperature as a function of the length of the gas flow path along the region. Figure 5 In , the target temperature profile increases monotonically from one end of the region to the other. Figure 6 In the case of a pressure drop / expansion, the temperature will drop due to the pressure drop / expansion position. How the temperature is controlled will vary depending on where the thermocouple is located. When the thermocouple is located after the pressure drop / expansion position (such as the TC p2 ) will result in a higher overall temperature and may cause a subsequent drop in temperature in other areas. p1 ) results in a lower overall temperature and can cause the temperature in the heater zone to drop.

[0055] Reference now Figure 7 and 8 A flow chart illustrating an example of a method of controlling the temperature in a gas flow path using a thermocouple and a TCR heater in each of a plurality of heater zones. Figure 7 In the method 700, the temperature measurement from the thermocouple is used as the primary control and the average temperature sensed by the TCR heater is used as the stop limit or override. At 720, the method monitors the temperature T1 of the heater zone using the thermocouple. At 724, the method monitors the temperature T2 of the heater zone using the TCR heater. In some examples, the temperature T2 is determined based on the resistance of the TCR heater. The resistance is determined by measuring the current and voltage and / or estimating the resistance based on the duty cycle.

[0056] At 732, the method determines TH 1A <=T2<=TH1B Whether it is established, it can correspond to an upper limit value and a lower limit value. In other examples, additional checks can be performed. For example, the method can also determine whether the difference between the first temperature and the second temperature is less than or equal to a predetermined temperature threshold. In some examples, the absolute value of the difference between T1 and T2 is compared with a predetermined temperature threshold.

[0057] If 732 is true, the method continues to 734. At 734, the method determines whether the temperature T1 is less than or equal to the temperature threshold TH2. If 734 is true, the method continues at 738 and increases the power or duty cycle sent to the TCR heater. If 734 is false, the method continues at 744 and determines whether the temperature T1 is greater than or equal to the temperature threshold TH3. If 744 is true, the method decreases the power or duty cycle sent to the TCR heater at 748. The method proceeds to 720 from 738 and 748. If 732 is false, the method uses a thermocouple for override and uses a default power or duty cycle at 750. The method may also generate an override notification.

[0058] exist Figure 8 In the example, method 800 uses the average temperature measurement from the TCR heater as the primary control and uses the temperature sensed by the thermocouple as the override. At 808, the method determines whether the local temperature T1 is less than or equal to the temperature threshold TH4. In other examples, additional checks may be performed. If 808 is false, the method continues at 809 and increases the power or duty cycle sent to the TCR heater.

[0059] At 810, the method determines whether the temperature T2 is less than or equal to the temperature threshold TH5. If 810 is true, the method continues at 811 and increases the power or duty cycle to the TCR heater. If 810 is false, the method continues at 820 and determines whether the temperature T2 is greater than or equal to the temperature threshold TH6. If 820 is true, the method decreases the power or duty cycle to the TCR heater at 748.

[0060] Reference now Fig. 9 , a heating system 900 for a gas delivery system includes an oven 910 surrounding one or more components of a substrate processing system. In some examples, the components include components of a gas delivery system and / or a gas flow path. A thermocouple 920 and one or more oven heating elements 922 may be disposed in the oven 910 and used to maintain an average temperature within the oven 910.

[0061] As described above, localized cooling and / or heating of components within the substrate processing system may occur. For example, gas lines may experience localized cooling due to various factors such as expansion of gas through fittings, valves, etc. Although the oven maintains an average temperature in the oven, TCR heaters 940-1, 940-2, and 940-R (collectively referred to as TCR heaters 940) (where R is an integer greater than 1) are disposed at locations (such as portions of components) where temperature changes (such as cooling) are more likely to occur as shown. When localized cooling occurs, TCR heaters 940 provide heat in an attempt to maintain the temperature at a predetermined temperature even with localized cooling. Examples of locations may include locations of pressure drops / expansion or other locations where localized heating changes may occur.

[0062] In some examples, the TCR heater 940 is not insulated. In other words, when the TCR heater 940 is not operating, the TCR heater 940 will be heated by the oven.

[0063] In some examples, one of the plurality of TCR heaters 940 is designated as a reference TCR heater, and the other TCR heaters in the plurality of TCR heaters 940 are controlled based on a corresponding ratio of the resistance of the TCR heater to the resistance of the reference TCR heater. A resistance ratio between the reference TCR heater 940 and the other TCR heaters in the plurality of TCR heaters 940 may be maintained. The resistance ratio may be determined when all of the TCR heaters 940 are at the same reference temperature (e.g., ambient temperature or other temperature). In some examples, the plurality of TCR heaters 940 are fabricated using the same material for the resistive element of the TCR heater 940. Therefore, since all of the TCR heaters should have approximately the same slope (temperature as a function of resistance), the resistance ratio should remain relatively constant at other temperatures.

[0064] In other words, the resistance ratios R2 / R1, R3 / R1, R4 / R1, . . . , and R are determined at a predetermined temperature at which all TCR heaters 940 are at the same temperature. R / R1. In some examples, the predetermined temperature used to determine the ratio is the ambient temperature. During operation, the resistance of each of the plurality of TCR heaters 940 is measured, and the power output provided to each TCR heater 940 is varied by the controller to maintain the predetermined ratio. Alternatively, a plurality of TCR heater zones (e.g., similar to Figure 2A Additional details of controlling the resistance ratio of a TCR heater may be found in commonly assigned U.S. Provisional Patent Application Serial No. 62 / 694,171, filed on July 5, 2018, the entire contents of which are incorporated herein by reference.

[0065] The control system can be used to control Figure 2B and 2C . In this example, TC 920 monitors the average temperature in oven 910. Controller 280 stores the resistance ratios of the plurality of TCRs and controls the power output of the plurality of TCR heaters based on the resistance ratios. In some examples, the resistance ratios of the plurality of TCRs are maintained by controller 280 to maintain a uniform temperature in each of the plurality of heater zones. In other examples, controller 280 also adjusts the resistance ratios of the plurality of TCRs based on position. For example, controller 280 adds an increase value to the resistance ratios of the plurality of TCRs so as to adjust the resistance ratios of the plurality of TCRs in an incremental manner. This scheme can be used to achieve a gradual increase in the temperature of the gas line in a direction from the source toward the processing chamber.

[0066] Reference now Fig.10 , shows the operation for Fig. 9 The method 1000 of the heating system 900 of the present invention is provided. At 1010, the temperature of the oven is monitored using a thermocouple. At 1020, a predetermined temperature is maintained in the oven based on the measured temperature and a desired temperature. At 1030, the resistance of a plurality of TCR heaters is measured. At 1040, a predetermined resistance ratio is maintained between a reference TCR heater and other heaters of the plurality of heaters by varying the power supplied to the heater zone.

[0067] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not clearly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0068] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0069] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer substrate supports, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out tools and other transfer tools and / or load locks connected to or connected to a specific system through an interface.

[0070] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0071] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0072] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0073] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A heater control system for heating a component of a substrate processing system, comprising: N heater zones, wherein N is an integer greater than zero, wherein each of the N heater zones heats a component of the substrate processing system, and comprising: Resistive heaters; as well as a temperature sensor disposed at a first position or a second position where a temperature change is expected to occur, and configured to sense a local temperature of a corresponding heater zone among the N heater zones; as well as A controller configured to: determining an average temperature of each of the N heater zones based on the resistance of the resistive heater in each of the N heater zones, and controlling the resistive heater based on the average temperature and the local temperature of each of the N heater zones, Wherein, when the temperature sensor is arranged at the first position, the control method of the resistance heater is different from that when the temperature sensor is arranged at the second position.

2. The heater control system of claim 1 , wherein the controller is configured to selectively control the power supplied to the resistive heater in each of the N heater zones based on the local temperature, and to selectively override the power supplied to the resistive heater in each of the N heater zones based on the average temperature.

3. The heater control system of claim 1 , wherein the controller is configured to selectively control the power supplied to the resistive heater in each of the N heater zones based on the average temperature, and to selectively override the power supplied to the resistive heater in each of the N heater zones based on the local temperature.

4. The heater control system of claim 1 further comprising a current sensor for sensing current supplied to each of the N heater zones, wherein the controller determines the resistance of each of the N heater zones based on the current.

5. The heater control system of claim 1 further comprising a voltage sensor for sensing a voltage supplied to each of the N heater zones, wherein the controller determines the resistance of each of the N heater zones based on the voltage.

6. The heater control system of claim 1, further comprising: a heater driver for driving one of the N heater zones based on a duty cycle; and resistance estimating means for estimating the resistance of the one of the N heater zones based on the duty cycle, Wherein the controller determines the local temperature of the one of the N heater zones based on the resistance.

7. The heater control system of claim 1, wherein the controller is configured to: selectively controlling power supplied to the resistive heater in each of the N heater zones based on the local temperature; and Power supplied to the resistive heater in each of the N heater zones is selectively overridden when the average temperature is outside of a predetermined temperature range.

8. The heater control system of claim 7, wherein the controller is configured to control the power supplied to the resistive heater in each of the N heater zones based on at least one of a default duty cycle and a default power level when the average temperature is outside the predetermined temperature range.

9. The heater control system of claim 1 , wherein the controller is configured to: selectively controlling power supplied to the resistive heater in each of the N heater zones based on the average temperature; and Based on the local temperature, power supplied to the resistive heater in each of the N heater zones is selectively overridden. 10 . The heater control system of claim 9 , wherein the controller is configured to increase power supplied to the resistive heater in each of the N heater zones when the local temperature is below a predetermined temperature.

11. The heater control system of claim 1, wherein the N heater zones are disposed around a plurality of gas lines from a source to a process chamber, wherein the N heater zones provide a progressive heating profile from the source to the process chamber. 12 . The heater control system of claim 1 , wherein the first position and the second position are a start position and an end position of a temperature zone, respectively.

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