Preventing sticking and / or repairing vapor delivery heads for high aspect ratio structures

Abstract

A vapor delivery head for wet processing of substrates includes a body having an upper surface, a lower surface, an upper plenum, and a lower plenum. A first hole is disposed on the upper surface of the body and is fluidically connected to the upper plenum for supplying a heated fluid. A second hole is disposed on the upper surface of the body and is connected to the upper plenum for removing the heated fluid. A third hole is disposed on the upper surface of the body and is connected to the lower plenum for receiving a gas mixture. A plurality of through-holes extending through the lower surface of the body are in fluidic communication with the lower plenum.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of U.S. Provisional Application No. 62 / 721,710, filed on August 23, 2018. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to processing of substrates, and more particularly, to preventing stiction of high aspect ratio (HAR) structures and / or repairing HAR structures. Background Art

[0004] The background description provided here is for the purpose of generally presenting the context of the present disclosure. No admission is made, either explicitly or implicitly, that the work of the presently designated inventors is prior art to the present disclosure to the extent that it is described in this background section and in aspects of the specification that were not determined to be prior art at the time the application was filed.

[0005] Substrate processing systems can be used to deposit films on substrates such as semiconductor wafers or to etch, clean, and / or otherwise process the surface of a substrate. In some processes, the substrate may be wet processed. In such processes, the substrate may be mounted on a spin chuck. As the spin chuck rotates, fluid nozzles may be used to dispense fluids such as liquids or gases and / or heat may be applied to process the substrate.

[0006] Some substrates contain high aspect ratio (HAR) structures. For example, HAR structures may include nanopillars, trenches, or vias. The width of the HAR structure (parallel to the substrate surface) is significantly smaller than the depth of the feature (perpendicular to the substrate surface). HAR structures with aspect ratios greater than 5:1 are quite common. More advanced processes include HAR structures with even higher aspect ratios. Pattern collapse occurs when one or more HAR structures collapse, move laterally relative to the substrate surface, and / or directly contact an adjacent HAR structure. Pattern collapse often occurs during the drying period following a wet cleaning process.

[0007] Several processes have been used to reduce pattern collapse when drying substrates. For example, substrates can be dried using supercritical CO2. However, supercritical CO2 is relatively expensive and has implementation issues. The surface of the substrate can be modified with a layer to prevent sticking. However, surface modification is generally expensive because it requires the use of additional chemicals. Surface modification also results in material loss because the modified layer needs to be removed. The substrate can also be dried using isopropyl alcohol (IPA), which is delivered to the substrate surface at a temperature close to the boiling point of IPA. However, some aspect ratios cannot be dried using boiling IPA without pattern collapse.

[0008] The substrate can also be treated using hydrofluoric acid (HF) vapor etching in a vacuum apparatus operating under vacuum pressure. However, vacuum apparatus is typically expensive and cannot be used for wet cleaning. A pre-wet cleaning step is often necessary to remove organic or metallic contaminants from the surface of the substrate.

[0009] Repairing collapsed structures can be performed using plasma etching in a vacuum apparatus. However, the required plasma etching hardware is expensive. Summary of the Invention

[0010] A vapor delivery head for wet processing of substrates includes a body having an upper surface, a lower surface, an upper plenum, and a lower plenum. A first hole is disposed on the upper surface of the body and is fluidically connected to the upper plenum for supplying a heated fluid. A second hole is disposed on the upper surface of the body and is connected to the upper plenum for removing the heated fluid. A third hole is disposed on the upper surface of the body and is connected to the lower plenum for receiving a gas mixture. A plurality of through-holes extending through the lower surface of the body are in fluidic communication with the lower plenum.

[0011] In other features, the body includes a first side, a second side, and a third side, wherein the body has a sector shape. An angle is defined between the first side and the second side, the angle being in a range of 30° to 75°. An angle is defined between the first side and the second side being in a range of 45° to 60°. A radius of the body is greater than 80% of a radius of the substrate.

[0012] In other features, the body further defines an outer plenum disposed below the upper plenum and outside the lower plenum. The upper plenum includes a first upper plenum, a second upper plenum, and a divider disposed between the first and second upper plenums. The outer plenum is positioned below the upper plenum and outside the lower plenum.

[0013] In other features, the heated fluid flows into the first aperture, into the first upper plenum, into the outer plenum, into the second upper plenum, and out through the second aperture. The heated fluid comprises heated gas.

[0014] In other features, a baffle is disposed within the lower plenum between the third hole and the lower plenum. The baffle includes a plurality of baffle portions to distribute the gas mixture within the lower plenum.

[0015] In other features, a baffle is arranged within the lower plenum between the third aperture and the lower plenum and includes a plurality of baffle portions arranged about an opening into the lower plenum to distribute more of the gas mixture to an area adjacent the third side than to an area adjacent a junction of the first and second sides.

[0016] In other features, the plurality of baffle portions include: a first baffle portion; a second baffle portion; and a third baffle portion. The first, second, and third baffle portions are arranged 120° apart around the opening into the lower plenum. The first baffle portion is located closest to the third side on a radial line of the body.

[0017] In other features, the plurality of through-holes are arranged in a triangular-shaped area on the lower surface.

[0018] An apparatus for wet processing of a substrate includes: a chuck for holding and rotating the substrate; and a vapor delivery head. The lower surface of the body is arranged parallel to the substrate during processing.

[0019] A method includes using the apparatus to direct the gas mixture containing hydrogen fluoride over an upper surface of the substrate.

[0020] In other features, prior to using the apparatus to direct the gas mixture over the surface of the substrate, the method includes: swirl-rinsing the surface of the substrate with a first rinse liquid; and swinging the first rinse liquid off the surface of the substrate.

[0021] In other features, the hydrogen fluoride is the first reactive component, and the gas mixture further comprises a second reactive component. At least one of the following exists: the second reactive component is a proton acceptor; and / or the second reactive component includes an OH group. The second reactive component is selected from the group consisting of water vapor, alcohol vapor, ammonia, and an amine.

[0022] An apparatus for wet processing of a substrate includes a chuck for holding and rotating the substrate. An arm is movable relative to the chuck. A vapor delivery head is connected to the arm and includes a body. A first fluid channel delivers a gas mixture through the body. A vapor receiving chamber is located on a surface of the body facing the substrate. A nozzle is located in the vapor receiving chamber and is fluidically connected to the first fluid channel.

[0023] In other features, the vapor containment chamber increases the residence time of the gas mixture adjacent to the substrate. The gas mixture includes hydrogen fluoride. Alternatively, the gas mixture includes hydrogen fluoride, an inert gas, or an alcohol. The nozzle has a circular cross-section or is a slit-shaped nozzle. The vapor delivery head includes a plurality of nozzles.

[0024] In other features, the vapor containment chamber has a depth in the range of 0.2 mm to 20 mm. Alternatively, the vapor containment chamber has a depth in the range of 0.3 mm to 10 mm or in the range of 1 mm to 6 mm. The body defines a plenum to receive the gas mixture. The body also includes a first portion (which includes the first fluid channel) and a second portion. The plenum is defined between the first portion and the second portion and is in fluid communication with the first fluid channel of the first portion.

[0025] In other features, the nozzle extends through the second portion. A heater is disposed in the body of the vapor delivery head. The heater may include a resistive heater or a fluid channel that receives a heated fluid. The heater heats the vapor delivery head to a temperature in the range of 50° C. to 200° C., or in the range of 50° C. to 100° C.

[0026] The vapor containment cavity is defined as an area between 0.1% and 30% of the area of ​​the substrate. In some examples, the vapor containment cavity is defined as an area between 1% and 15% of the area of ​​the substrate. The plurality of through-holes are arranged in a portion of the area of ​​the vapor containment cavity, the portion being located near a leading edge of the vapor delivery head. The portion of the area of ​​the vapor containment cavity is less than 50% of the area of ​​the vapor containment cavity. A seal is located between the first portion and the second portion.

[0027] In other features, the second portion includes a downwardly projecting flange located on a surface of the second portion facing the substrate, wherein an inner surface of the downwardly projecting flange defines an outer boundary of the vapor containment chamber.

[0028] In other features, the first portion further defines a second fluid channel. The plenum is in fluid communication with the second fluid channel. The vapor delivery head has a rectangular or banana-shaped cross-section in a plane parallel to the substrate.

[0029] In other features, a liquid nozzle head is connected to a second arm and delivers rinsing liquid onto the substrate, and a motor causes the second arm with the liquid nozzle head to scan over the substrate. Alternatively, a liquid nozzle head is connected to the arm and delivers rinsing liquid onto the substrate, and a motor causes the arm with the liquid nozzle head and the vapor delivery head to scan over the substrate.

[0030] In other features, the arm is configured to sweep the vapor delivery head across the substrate with the vapor containment chamber located a predetermined distance from the substrate. The predetermined distance is in a range of greater than or equal to 0.1 mm to less than or equal to 10 mm. In some examples, the predetermined distance is in a range of 1 mm to 3 mm.

[0031] A method includes using the apparatus to direct a gas mixture containing hydrogen fluoride over an upper surface of the substrate. Prior to using the apparatus to direct the gas mixture over the surface of the substrate, the method includes: swirl-rinsing the surface of the substrate with a first rinse liquid; and spinning the first rinse liquid off the surface of the substrate.

[0032] In other features, the hydrogen fluoride is the first reactive component, and the gas mixture further comprises a second reactive component. The second reactive component is a proton acceptor; and / or the second reactive component comprises an OH- group. The second reactive component is selected from the group consisting of water vapor, alcohol vapor, ammonia, and an amine.

[0033] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0035] Figures 1A-1C A side cross-sectional view of a substrate before and after wet cleaning and drying, and after repairing according to the present invention is shown;

[0036] Figure 2A is an exemplary functional block diagram of a spin chuck with a vapor delivery head for processing a substrate according to the present invention;

[0037] Figure 2B for Figure 2A A plan view of a rotary chuck;

[0038] Figure 2C is a plan view of another example of a spin chuck according to the present invention, the spin chuck having an arm that sweeps across a substrate in a radial direction;

[0039] Figure 2D and 2E is a side view of an example of a combination head according to the present invention, the combination head including a vapor delivery head and a nozzle head;

[0040] Figure 3 and 4are top and bottom perspective views of an example of a vapor delivery head according to the present invention;

[0041] Figure 5A and 5B are side cross-sectional and bottom views of an example of a vapor delivery head according to the present invention;

[0042] Figure 6A and 6B are side cross-sectional and bottom views of another example of a vapor delivery head according to the present invention;

[0043] Figure 7A and 7B are side cross-sectional and bottom views of another example of a vapor delivery head according to the present invention;

[0044] Figure 8A and 8B are side cross-sectional and bottom views of another example of a vapor delivery head according to the present invention;

[0045] Figure 9A is a plan view of another example of a curved vapor delivery head according to the present invention;

[0046] Figure 9B for Figure 9A A side cross-sectional view of a curved vapor delivery head;

[0047] Figure 9C for Figure 9A A side view of a curved vapor delivery head;

[0048] Figure 10A is a top perspective view of a vapor delivery head according to the present invention;

[0049] Figure 10B is a bottom perspective view of a vapor delivery head according to the present invention;

[0050] Figure 10C According to the present invention, along the radial center line ( Figure 10B A cross-sectional view of the vapor delivery head taken along CC;

[0051] Figure 10D According to the present invention, the radial direction is parallel to the center line ( Figure 10B A cross-sectional view of the vapor delivery head taken along DD;

[0052] Figure 10E is a partial perspective view of the bottom surface of a vapor delivery head according to the present invention, wherein the bottom surface has been removed;

[0053] Figure 10F is a side partial cross-sectional view of a vapor delivery head according to the present invention taken along a line perpendicular to the radial centerline;

[0054] Figure 10G According to the present invention Figure 10F A planar cross-sectional view of the vapor delivery head taken along line GG in FIG; and

[0055] Figure 10H According to the present invention Figure 10F A planar cross-sectional view of the vapor delivery head taken along line HH in FIG.

[0056] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0057] A vapor delivery head according to the present invention can be used during dry etching of a substrate containing high aspect ratio (HAR) structures following wet processing.The vapor delivery head is positioned in close proximity to the substrate (when the substrate is rotated).

[0058] In some examples, a vapor delivery head includes a body having an upper surface and a bottom surface having a plurality of through-holes. The body defines first and second upper plenums, a lower plenum, and an outer plenum disposed around the lower plenum. A gas mixture inlet disposed on the upper surface of the body is in fluid communication with the lower plenum. A gas mixture flows into the gas mixture inlet, into the lower plenum, and out through the plurality of through-holes.

[0059] A heated fluid (e.g., heated gas) flows into another inlet disposed on the upper surface of the main body and enters the first upper plenum. The heated fluid flows downward into the outer plenum, upward into the second upper plenum, and out through an outlet disposed on the upper surface of the main body. The heated fluid heats the main body of the vapor delivery head to prevent condensation of the gas mixture.

[0060] In some examples, the body has a fan-shaped body, although other shapes may be used. In some examples, the position of the vapor delivery head is fixed relative to the substrate during processing using vapor (while the substrate is rotated). In some examples, the vapor delivery head is removed after vapor processing to enable other types of substrate processing to be performed.

[0061] In other examples, the vapor delivery head includes a vapor containment chamber that increases the concentration of the gas mixture near the substrate, thereby enhancing etching. After the substrate has been processed, wet processing and dry etching can be performed in a wet clean tool at or near atmospheric pressure. Combining wet processing and dry etching in a single hard tool offers a less expensive alternative to other dry processes with little increase in processing time. Alternatively, wet processing can be completed in a wet processing tool, and the repair process can be performed in a separate repair tool.

[0062] In some examples, a vapor delivery head is used to dispense a gas mixture onto the surface of the substrate after exposure to a rinse solution such as isopropyl alcohol (IPA). In some examples, the gas mixture includes a fluorine gas species such as hydrofluoric acid (HF) gas, although other gases or gas mixtures may be used. Additional details regarding the use of HF gas can be found in U.S. Provisional Patent Application No. 62 / 575,705, filed on October 23, 2017. The vapor delivery head according to the present invention is used to increase the residence time of the gas mixture above the substrate and reduce dilution of the gas mixture by ambient gases (compared to systems using standard nozzles to dispense the gas mixture).

[0063] In some examples, the gas mixture may also include a second reactive component (e.g., solvent vapor, a proton acceptor, or a component having OH groups) and / or a carrier gas. In some examples, the carrier gas includes molecular nitrogen (N2), although other carrier gases may also be used. In some examples, the second reactive component includes water or an alcohol (methanol, IPA, or other alcohols). For example, an adsorbed layer of the solvent is formed and HF2 is generated. SiO2 reacts with HF2 and forms SiF4, which causes evaporation (etching) of the SiO2 layer.

[0064] In some examples, the gas mixture includes HF in a range of 0.5% to 5% (volume percent), IPA in a range of 0.5% to 2.5% (volume percent), and N2 in a range of 92.5% to 99% (volume percent). In some examples, the gas mixture is generated by flowing N2 gas as a carrier gas through a concentrated HF aqueous solution (HF concentration in a range of 45% to 55% (e.g., 49% (volume percent))).

[0065] In other examples, the gas mixture includes an inert gas in a range of 80% to 99.9% (volume percent), HF in a range of 0.05% to 10% (volume percent), and alcohol in a range of 0.05% to 10% (volume percent). In other examples, the gas mixture includes an inert gas in a range of 90% to 99.8% (volume percent), HF in a range of 0.1% to 5% (volume percent), and alcohol in a range of 0.1% to 5% (volume percent).

[0066] In some examples, the gas mixture is generated by flowing N2 gas as a carrier gas through a concentrated HF aqueous solution (HF concentration ranging from 45 vol% to 55 vol% (eg, 49 vol%)).

[0067] In other examples, ammonia (NH3) or any amine (e.g., ethylamine, ethylenediamine, pyrrolidine) may be optionally added to the gas mixture when the processing temperature is above 100° C. The addition of NH3 is particularly useful at temperatures above 100° C., where the formation of NH4F is suppressed (because it is above the sublimation temperature) and volatile (NH4)2SiF6 is formed.

[0068] Alternatively, the process can be applied to the substrate after the rinse liquid has been spun off the substrate and the substrate is relatively dry. In some examples, the process can include exposing in the presence of the rinse liquid and exposing again after the rinse liquid has been spun off and dried. The process can be repeated one or more times.

[0069] In some examples, the process is performed at or near atmospheric pressure. For example, the substrate surface can be maintained at a pressure in the range of 900 to 1100 hectopascals (hPa) during processing. In some examples, the gas mixture is delivered to the substrate using a nozzle that is scanned across the substrate surface in a linear direction (e.g., along a radial line) or in an arcuate path. Additionally, vapors that may enhance the process, such as water or ammonia NH3 vapor (gas), or amines, can be supplied.

[0070] In some examples, the process is performed at a predetermined temperature in the range of 20° C. to 400° C. In other examples, the process is performed at a predetermined temperature in the range of 50° C. to 200° C. or 50° C. to 100° C. The partial pressures of HF and solvent vapors can vary between 1 mTorr and up to their respective saturated vapor pressures at a particular process temperature.

[0071] In some embodiments, the controllable method of vapor etching is to use a vapor transport head to add reactive vapor (such as HF / solvent vapor combination) to the drying process to provide improved results. In some examples, the controllable method of vapor etching is to use a substrate heater with radial heating and / or a vapor transport head that can be scanned in radial direction and / or along an arcuate path above the substrate to perform. Except reducing hardware and chemical costs, method described herein also improves the productive rate of technology. When using the vapor transport head, the efficiency of this technology improves.

[0072] Now refer to Figures 1A-1C , which shows the processing of the substrate. Figure 1A , which shows a substrate 110 before wet processing and drying. The substrate 110 includes high aspect ratio (HAR) structures 112-1, 112-2, 112-3, and 112-4 (collectively referred to as HAR structures 112) defined on one or more underlying layers 114. For example, the HAR structures 112 include pillars, vias, trenches, and / or other features. Figure 1A The substrate 110 in the embodiment is wet treated and dried.

[0073] exist Figure 1B , which shows the substrate 110 after wet processing and drying. The HAR structures 112-2 and 112-3 partially collapse and tilt toward each other. In some examples, a bridging oxide 120 is formed between the HAR structures 112-2 and 112-3. Examples of bridging oxides that can be formed include silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), titanium oxide (TiO x ) etc. Figure 1C , the substrate 110 is shown after being processed using the methods described herein, such that the bridging oxide 120 is removed and the collapsed HAR structures 112 - 2 and 112 - 3 are repaired.

[0074] Reference Figure 2A , which shows an example of a system 200 for wet processing and repairing a substrate. The system 200 includes a chamber 202 that houses a spin chuck 206. A substrate 208 is disposed on a surface of the spin chuck 206. The spin chuck 206 rotates the substrate 208 as liquid is dispensed onto the substrate 208, and / or is used to spin the liquid off. The substrate 208 can be attached to the spin chuck 206 using any suitable mechanism. For example, the substrate 208 can be attached to the spin chuck 206 using clamping pins 209. Suitable examples of clamping pins are presented and described in commonly assigned U.S. patent application Ser. No. 15 / 232,594 (Agent Docket No. 3877-1US) for "Method and Apparatus for Processing Wafer-Shaped Articles."

[0075] In some examples, the surface 210 of the spin chuck 206 is transparent, and the heater 211 is disposed below the surface 210. In some examples, the heater 211 includes a plurality of light emitting diodes (LEDs) arranged in one or more radial zones to enable radial heating of the substrate 210. In some examples, the heater 211 can be operated to provide a moving heat wave that moves outward from a central position of the substrate to its radially outer edge. In some examples, the spin chuck 206 rotates while the heater 211 is stationary. A suitable example of a spin chuck for radially heating a substrate is presented and described in U.S. patent application Ser. No. 15 / 232,594.

[0076] In some examples, the rotary chuck 206 is rotated by a motor 212 via a drive shaft 213, as shown. In other examples, the motor 212 includes a rotor and a stator, and the rotor is magnetically driven without physical contact. Suitable examples are shown in commonly assigned U.S. Patent No. 6,485,531. The rinse liquid is delivered by an arm 214 (which is shown in an inactive position) and a nozzle 216 that scans the substrate 208 everywhere through a motor 220. The motor 220 scans the arm to various locations of the rotating substrate in a radial or arcuate direction. A valve 222 selectively supplies the rinse liquid from a liquid supply source 224.

[0077] The other arm 234 (which is shown in Figure 2A ) and vapor delivery head 236 can be used to deliver a gas mixture. In some examples, the gas mixture includes one or more of hydrofluoric acid (HF) gas, a carrier gas, and / or a second reactive component (e.g., solvent vapor and / or ammonia (NH3)), as further described below. In some examples, the vapor receiving chamber of vapor delivery head 236 is arranged within a predetermined distance from the surface of substrate 208 during etching. In some examples, the predetermined distance is in a range of greater than or equal to 0.1 mm to less than or equal to 10 mm. In other examples, the predetermined distance is in a range of greater than or equal to 0.1 mm and less than or equal to 3 mm. In other examples, the predetermined distance is in a range of 1 mm to 3 mm. In some examples, the predetermined distance is 2 mm + / - 0.5 mm. In some examples, the gas mixture is delivered at a predetermined velocity in a range of 1 to 50 m / s. In some examples, the gas mixture is delivered at a predetermined flow rate in a range of 1 to 20 standard liters per minute (slm).

[0078] Motor 240 can be used to scan the vapor delivery head 236 to various locations on the substrate 208, and valve 242 can be used to selectively supply a gas mixture. Gas delivery system 250 includes a vapor supply source 252 and a valve 254. In some examples, vapor supply source 252 includes a heated liquid ampoule, bubbler, or other vaporizer. Gas delivery system 250 also includes one or more gas supply sources 262-1, 262-2, ..., and 262-N (collectively referred to as gas supply sources 262) and valves 264-1, 264-2, ..., and 264-N (collectively referred to as valves 264). Manifold 270 can be used to allow gases to mix before being delivered through valve 242. In some examples, a mass flow controller (not shown) and / or auxiliary valves are provided to more accurately control the gas and / or solvent vapor. Controller 280 controls the valves, motor, and gas delivery system 250.

[0079] exist Figure 2B, arms 214 and 234 are shown in plan view. Arm 214 is shown in a dispensing position above substrate 208, while arm 234 is shown in an inactive position. Arm 214 dispenses rinsing liquid onto the substrate, and the rinsing liquid is spun off. After dispensing the rinsing liquid, arm 214 moves to the inactive position, and arm 234 dispenses the gas mixture using vapor delivery head 236, as further described below.

[0080] exist Figure 2A and 2B In FIG, vapor delivery head 236 moves along an arcuate path to the substrate. Figure 2C In FIG. 2 , vapor delivery head 236 may be moved in a linear direction, such as along a radial line or another line across substrate 208 , by motor 290 and arm 292 .

[0081] exist Figure 2D In FIG. 2 , the combination head 294 includes a vapor delivery head 236 and a nozzle head 295. The nozzle head 295 includes one or more nozzles 296 to deliver gases and / or liquids to the substrate. For example, one or more nozzles 296 can be used to deliver gases such as molecular nitrogen (N2), propanol (IPA) and / or deionized water (DIW). It will be appreciated that this arrangement requires a single arm rather than a single arm. Figure 2A and 2B The two arms shown in .

[0082] In some examples, vapor delivery header 236 includes a heater 297 to control its temperature. In some examples, heater 297 comprises a resistive heater. A temperature sensor 298, such as a thermocouple, may be used to sense the temperature of vapor delivery header 236. Controller 280 monitors temperature sensor 298 and adjusts the operation of the heater to provide the desired temperature. In other examples, heater 297 comprises a temperature coefficient of resistance (TCR) heater, which has a resistance that is related to its temperature. If a TCR heater is used, controller 280 monitors the voltage and / or current supplied to the TCR heater to determine the resistance and varies the voltage and current to provide the desired resistance corresponding to the desired temperature.

[0083] Reference Figure 2E Vapor delivery head 236 includes heater 299 that receives a heated fluid, such as a heated gas or a heated liquid, from a fluid source (not shown). Non-limiting examples of suitable fluids include heater molecular nitrogen (N2), heated coolant, heated water, etc. A pump (not shown) may be used to move the fluid through a channel formed in a portion of vapor delivery head 236.

[0084] Reference Figure 3 and Figure 4 , which shows vapor delivery head 300. Figure 3, vapor delivery head 300 includes body 308. Body 308 includes first portion 310 (including upper portion 311 connected to flanged lower portion 314) and second portion 318. It will be appreciated that vapor delivery head 300 may be implemented with additional or fewer portions.

[0085] Fasteners 322 are disposed in holes defined in flange lower portion 314 and second portion 318 to connect first portion 310 to second portion 318. Vapor delivery head 300 includes a backside surface 326 and a bottom surface 330. Backside surface 326 can be connected to an arm, nozzle head, or other support structure. Bottom surface 330 is disposed adjacent to and scans the top surface of a substrate during processing.

[0086] exist Figure 4 , backside surface 326 includes one or more ports 410 and 412 that receive a gas mixture and / or a liquid mixture. In some examples, ports 410 and 412 include tube clamps to engage gas tubes (not shown) connected thereto. Bottom surface 330 defines a vapor containment cavity 450. The vapor containment cavity increases the residence time of the gas mixture adjacent to the substrate and reduces dilution due to ambient gases.

[0087] In some examples, vapor containment cavity 450 is defined by the side surfaces and the downward-facing surface of second portion 318. In some examples, the vapor containment cavity has a generally rectangular cross-section with rounded edges in a plane perpendicular to the substrate, although other shapes may be used. In some examples, the vapor containment cavity has a banana-shaped cross-section in a plane perpendicular to the substrate, although other shapes may be used.

[0088] Through holes 454 extend through bottom surface 330 from the inner plenum defined by vapor delivery head 300 (shown below) to supply vapor and / or other gases to vapor containment cavity 450. Although through holes 454 are shown, one or more nozzles or slit-shaped nozzles may be used. Alternatively, the fluid channel may pass through the body of the vapor delivery head and connect directly to the through holes, nozzles, or slit-shaped nozzles. In some examples, the diameter of through holes 454 is in the range of 0.1 mm to 2 mm, although other diameters may be used. In some examples, the diameter of through holes 454 is in the range of 0.4 mm to 0.6 mm, although other diameters may be used. In some examples, the vapor containment cavity defines an area covering 0.1% to 30% of the substrate area. Alternatively, one or more slit-shaped nozzles may be used.

[0089] As further described below, the number and relative arrangement of through-holes 454 can be varied. Similarly, the cross-sectional shape of vapor delivery head 300 and the shape of vapor containment chamber 450 can be varied. In some examples, through-holes 454 are arranged adjacent to the leading edge of vapor delivery head 300 (with the rows of through-holes arranged perpendicular to the scan direction) as vapor delivery head 300 scans across a rotating substrate during processing. In some examples, the through-holes of the vapor delivery head are removed from the edge of the substrate when the vapor delivery head is not in use.

[0090] Now refer to Figure 5A and 5B Vapor delivery head 300 defines an inner plenum 510 that is in fluid communication with one end of through-hole 454. The opposite end of through-hole 454 is in fluid communication with vapor containment chamber 450. In some examples, inner plenum 510 is defined by the bottom surface of flange lower portion 314 and a top surface 512 of second portion 318. In some examples, downwardly projecting flange 514 of second portion 318 surrounds vapor containment chamber 450 and maintains a predetermined distance from the top surface of the substrate during etching. In some examples, the predetermined distance is greater than or equal to 0.1 mm and less than or equal to 6 mm, or less than or equal to 5 mm, or less than or equal to 4 mm, or less than or equal to 3 mm, or less than or equal to 2 mm, or less than or equal to 1 mm. In some examples, the vertical depth of the vapor containment chamber is less than or equal to 4 mm, less than or equal to 3 mm, less than or equal to 2 mm, or less than or equal to 1 mm. In some examples, the predetermined distance is greater than 0.5 mm. In some examples, the depth of the vapor containment cavity is in the range of 0.3 mm and 6 mm.

[0091] In some examples, a seal 320, such as an O-ring or gasket disposed in a channel (not shown) formed on the first portion 310 and / or the second portion 318, can be used to provide a seal between the first portion 310 and the second portion 318. In other examples, the first portion 310 and the second portion 318 can be welded together to provide a seal.

[0092] A tube clamp 530, disposed at the opening of airflow channel 534, clamps one end of tube 532. In some examples, airflow channel 534 is arranged horizontally. Airflow channel 534 is fluidically connected to airflow channel 538. In some examples, airflow channel 538 is arranged vertically. Airflow channel 538 fluidically connects airflow channel 534 to inner plenum 510.

[0093] Tube clamp 540, positioned at the opening of airflow channel 544, clamps one end of tube 542. In some examples, airflow channel 544 is arranged horizontally. Airflow channel 544 is fluidically connected to airflow channel 548. In some examples, airflow channel 548 is arranged vertically. Airflow channel 548 fluidically connects airflow channel 544 to inner plenum 510.

[0094] In some examples, through-holes 454 are arranged adjacent to edge 560 of vapor delivery head 300. In some examples, through-holes 454 comprise staggered rows comprising 9, 8, and 9 through-holes 454, although additional or fewer rows and / or through-holes may be used. In some examples, through-holes 454 are arranged in an area less than or equal to 25% of the area defined by vapor containment chamber 450. Figure 5B 3. In the embodiment of the present invention, second portion 318 defines a downwardly projecting flange 514 surrounding the outer periphery of bottom surface 330. Downwardly projecting flange 514 defines the outer periphery of vapor containment chamber 450.

[0095] Now refer to Figure 6A and 6B , which shows another example of a vapor delivery head 600 according to the present invention. Additional rows of through-holes 454 are provided. In some examples, through-holes 454 include six staggered rows of 8 or 9 through-holes 454, although other arrangements may be used. In some examples, through-holes 454 are arranged in an area less than 50% of vapor containment chamber 450. In some examples, the rows are evenly spaced. In other examples, the spacing increases or decreases monotonically.

[0096] exist Figure 6A In FIG, heater 620 defines a path through first portion 310 of vapor delivery head 600. Figure 6B 6. In the embodiment of the present invention, heater 630 defines a passage through second portion 318 of vapor delivery header 600. Heaters 620 and / or 630 may include the resistive or TCR heaters described above and / or the fluid heaters described above. One or both of heaters 620 and 630 may be used to heat vapor delivery header 600 to a predetermined temperature (with or without local temperature feedback). The use of a fluid heater eliminates the need for electrical connections. Temperature control using heaters 620 and / or 630 may be implemented to reduce or eliminate condensation of the gas mixture supplied by vapor delivery header 600. In some examples, heaters 620 and / or 630 heat the vapor delivery header to a temperature in the range of 50° C. to 200° C. or in the range of 50° C. to 100° C.

[0097] In some examples, ammonia (NH3) or any amine (e.g., ethylamine, ethylenediamine, pyrrolidine) may be optionally added to the gas mixture when the processing temperature is above 100°C. The addition of NH3 is particularly useful at temperatures above 100°C, where the formation of NH4F is suppressed (because it is above the sublimation temperature) and volatile (NH4)2SiF6 is formed.

[0098] Now refer to Figure 7A and 7B , which shows another example of a vapor delivery head 700 according to the present invention. Bottom 318 includes downwardly projecting flanges 708-1 and 708-2 that share a common edge and define a first vapor-receiving chamber 710-1 and a second vapor-receiving chamber 710-2. A first group 714-1 of through-holes 454 fluidly connects inner plenum 510 to first vapor-receiving chamber 710-1. A second group 714-2 of through-holes 454 fluidly connects inner plenum 510 to second vapor-receiving chamber 710-2. In some examples, first group 714-1 and second group 714-2 include three staggered rows, each including 9, 8, and 9 through-holes 454, although other numbers of rows and / or through-holes may be used.

[0099] Reference Figure 8A and 8B , which shows another example of a vapor delivery head 800. A first group 814-1 of through holes 454 fluidly connects the inner plenum 510 to the vapor receiving chamber 450. A second group 814-2 of through holes 454 fluidly connects the inner plenum 510 to the vapor receiving chamber 450. In this example, the through holes 454 include irregular spacing between one or more rows of through holes. In some examples, the first group 814-1 and the second group 814-2 include three staggered rows, each including 9, 8, and 9 through holes 454, respectively, although other numbers of rows and / or through holes may be used. The first group 814-1 and the second group 814-2 of through holes 454 are spaced apart by a distance that is greater than the spacing between the individual rows within the first group 814-1 and the second group 814-2 of through holes 454.

[0100] Now refer to Figures 9A to 9C , which shows a curved vapor delivery head 920. Figure 9A , which shows curved vapor delivery head 920 relative to underlying substrate 922. In some examples, portion 924 of curved vapor delivery head 920 is arcuate and the vapor receiving cavity is generally banana-shaped. In some examples, portion 924 has the same or similar curvature as a section of substrate 922. Curved vapor delivery head 920 can be attached to nozzle tip 930, as shown. Figure 2D Curved vapor delivery head 920 defines vapor receiving cavity 950 .

[0101] exist Figure 9B9, curved vapor delivery head 920 includes a first portion 934 connected to a second portion 936. A plenum 942 is defined between first portion 934 and second portion 936. Second portion 936 defines a vapor receiving cavity 948. A plurality of through holes 946 connects plenum 942 to vapor receiving cavity 948.

[0102] exist Figure 9C In some examples, spoiler 950 can be arranged along the leading edge of vapor delivery head 920 to reduce turbulence that may occur due to a blunt leading edge. In some examples, spoiler 950 has a wedge shape configured to disperse air or other ambient gas.

[0103] Now refer to Figures 10A to 10H , which shows another example of a vapor delivery head 1000 for delivering a gas mixture to a substrate according to the present invention. Figure 10A and 10B In the embodiment of the present invention, vapor delivery head 1000 includes a body 1002 having an upper surface 1004, a side surface 1006, and a side surface 1008. In some examples, side surface 1006 comprises a substantially straight section, while side surface 1008 comprises a curved or arcuate section. In some examples, the angle defined between side surfaces 1006 is in the range of 30° to 75°. In some examples, the angle defined between side surfaces 1006 is in the range of 45° to 60°. In some examples, the length of the radial centerline of the body is in the range of 70-150%, 80-130%, or 90-120% of the radius of the substrate to be processed.

[0104] Vapor delivery head 1000 also includes a mounting pad 1014 disposed on upper surface 1004. Mounting pad 1014 includes holes 1022 for receiving fasteners to attach connection fixtures (not shown) (for vapor and heated fluid) to vapor delivery head 1000. Mounting pad 1014 also includes holes 1016, 1018, and 1020. In some examples, hole 1016 is associated with a heated fluid outlet or inlet, respectively, hole 1018 is associated with a gas mixture inlet, respectively, and hole 1020 is associated with a heated fluid inlet or outlet, respectively.

[0105] In some examples, vapor delivery head 1000 is mounted above the substrate during processing of the substrate using the gas mixtures described herein. Vapor delivery head 1000 can be removed when performing other substrate processing. In some examples, vapor delivery head 1000 is fixed relative to the rotating substrate. In some examples, vapor delivery head 1000 is mounted to an arm that vertically moves vapor delivery head 1000 to provide a predetermined distance between vapor delivery head 1000 and the substrate. In some examples, the predetermined distance is in the range of 0.3 mm to 5 mm. In some examples, the arm moves the vapor delivery head laterally to provide top access to the substrate for other processing arms / nozzles. In some examples, the spin chuck is disposed in a chamber having an annular duct disposed around the radially outer surface of the spin chuck to collect liquid ejected from the substrate during spin processing.

[0106] In some examples, hole 1018 supplies the above-mentioned gas mixture, while holes 1016 and 1020 supply a heated fluid, such as a heated liquid or a heated gas. In some examples, the heated gas includes a heated inert gas, such as molecular nitrogen N2, but other types of gases can also be used.

[0107] exist Figure 10B , bottom surface 1030 of body 1002 is shown as including a plurality of through-holes 1040 arranged in a drill hole pattern. In some examples, plurality of through-holes 1040 includes 50 to 1000 through-holes. In other examples, plurality of through-holes 1040 includes 300 to 500 through-holes. In some examples, the outer boundary of the drill hole pattern is generally triangular, though other shapes may be used. In some examples, each of the plurality of through-holes is also arranged in a triangular pattern relative to adjacent through-holes within the outer boundary. It will be appreciated that the through-holes may be arranged in other patterns.

[0108] As further described below, the gas mixture is supplied to hole 1018 and distributed to the adjacent exposed surface of the substrate through a plurality of through holes 1040. Heated fluid is supplied to hole 1020 and circulated through body 1002 (without mixing with the gas mixture) to heat body 1002 to an elevated temperature and prevent condensation of vapor in the gas mixture. The heated fluid returns to hole 1016, which corresponds to the heated fluid outlet.

[0109] Now refer to Figures 10C to 10D The upper portion 1050 of the body 1002 defines a first upper plenum 1044A in fluid communication with the aperture 1016 corresponding to the heated fluid inlet. The upper portion 1050 of the body 1002 also defines a second upper plenum 1044B (shown in FIG. Figure 10H), which is in fluid communication with the hole 1018 corresponding to the heated fluid outlet. The first upper plenum 1044A and the second upper plenum 1044B may be collectively referred to herein as the upper plenum 1044.

[0110] Upper plenum 1044 is defined between horizontal surface 1061 and horizontal surface 1063 of body 1002. Lower plenum 1046 is defined by horizontal surface 1063, sidewall 1054, and upper portion 1065 of bottom surface 1030 (which includes plurality of through-holes 1040). Outer plenum 1048 is disposed below upper plenum 1044 and exterior to lower plenum 1046 (between sidewall 1054 and side 1006).

[0111] Now refer to Figure 10C and 10E The heated fluid enters the main body 1002 through hole 1020 and flows into the first upper plenum 1044A. The heated fluid flows downward from the first upper plenum 1044A into the outer plenum 1048. The heated fluid then flows through the outer plenum 1048 and upward into the second upper plenum 1044B. The heated fluid flows out of the main body 1002 through hole 1016.

[0112] exist Figure 10E , which shows the path 1070 of the heated fluid from the first upper plenum 1044A to a location near one side of the junction between the side surfaces 1006 of the body 1002. The heated fluid flows downwardly into the outer plenum 1048 and around the circumference of the body 1002 adjacent to and outside of the lower plenum 1046. The heated fluid flows upwardly into the second upper plenum 1044B at a location near the other side of the junction between the side surfaces 1006 of the body 1002.

[0113] The distribution of the gas mixture in the lower plenum 1046 is also shown in FIG. Figure 10E The holes 1018 corresponding to the gas mixture inlet deliver the gas mixture to the baffle 1060. The baffle 1060 distributes the gas mixture in the lower plenum 1046 and avoids high pressure directly below the holes 1018.

[0114] exist Figure 10F 、 10G and 10H, which illustrate additional features of vapor delivery head 1000. Figure 10F In the embodiment, holes 1067 receive fasteners to attach a connection fixture (not shown) to upper surface 1004 of vapor delivery head 1000. Figure 10G, baffle 1060 is shown in greater detail to include baffle sections 1072-1, 1072-2, and 1072-M (collectively, baffle sections 1072) arranged at 360° / M. In some examples, M=3, and one of the baffle sections (e.g., 1072-2) is arranged on the radial centerline away from the junction between side surfaces 1006. The arrangement of baffle section 1072 directs more of the gas mixture toward the larger area of ​​lower plenum 1046 adjacent to surface 1008, compared to the smaller area of ​​lower plenum 1046 adjacent to the junction of side surfaces 1006. Baffle 1060 also provides a more uniform pressure by reducing high pressure that would otherwise occur directly below orifice 1018.

[0115] exist Figure 10H , a central divider 1080 is disposed between the first upper plenum 1044A and the second upper plenum 1044B to prevent heated fluid from flowing directly therebetween. The central divider 1080 includes a middle portion 1084, a first portion 1082 located near the junction between the sides 1006, and a second portion 1086 located adjacent the sides 1008. In some examples, the middle portion 1084 is wider than the first portion 1082 and the middle portion 1084 (in a direction perpendicular to the radial centerline). Holes 1016, 1018, and 1020 are disposed between the middle portion 1084 and the first portion 1082. The first portion 1082 includes a first arcuate recess 1092 to direct heated fluid from the first upper plenum 1044A into the outer plenum 1048. The first portion 1082 includes a second arcuate recess 1094 to direct heated fluid from the outer plenum 1048 into the second upper plenum 1044B.

[0116] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because other modifications will become apparent when studying the drawings, description and appended claims. It should be understood that one or more steps in the method can be performed in a different order (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the embodiments described are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0117] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0118] In some implementations, the controller is part of a system that can be part of the examples above. Such a system can include semiconductor processing equipment that includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller" that can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out tools and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0119] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various separate settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or the die of the wafer.

[0120] In some implementations, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or all or part of a wafer fab host system that can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, review the history of past manufacturing operations, review trends or performance metrics for multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system via a network (which can include a local network or the Internet). The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., process and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0121] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0122] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport of wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A vapor delivery head for wet processing of substrates, comprising: a main body comprising an upper surface, a lower surface, an upper plenum chamber, and a lower plenum chamber; a first hole disposed on the upper surface of the body and fluidly connected to the upper plenum to supply heated fluid; a second aperture disposed on the upper surface of the body and connected to the upper plenum for removing heated fluid; a third hole disposed on the upper surface of the body and connected to the lower plenum to receive a gas mixture; a plurality of through holes extending through the lower surface of the body and in fluid communication with the lower plenum; as well as A baffle is disposed in the lower plenum between the third hole and the lower plenum, wherein the baffle includes a plurality of baffle portions to distribute the gas mixture in the lower plenum.

2. The vapor delivery head of claim 1 , wherein the body comprises a first side, a second side, and a third side, wherein the body has a sector shape.

3. The vapor delivery head of claim 2, wherein an angle defined between the first side and the second side is in the range of 30° to 75°.

4. The vapor delivery head of claim 2, wherein an angle defined between the first side and the second side is in the range of 45° to 60°.

5. The vapor delivery head of claim 1, wherein a radius of the body is greater than 80% of a radius of the substrate.

6. The vapor delivery head of claim 1 , wherein the body further defines an outer plenum disposed below the upper plenum and external to the lower plenum.

7. The vapor delivery head of claim 1, wherein the heated fluid comprises a heated gas.

8. The vapor delivery head of claim 1 , wherein the plurality of through-holes are arranged in a triangular shaped area on the lower surface.

9. A vapor delivery head for wet processing of substrates, comprising: a main body comprising an upper surface, a lower surface, an upper plenum chamber, and a lower plenum chamber; a first hole disposed on the upper surface of the body and fluidly connected to the upper plenum to supply heated fluid; a second aperture disposed on the upper surface of the body and connected to the upper plenum for removing heated fluid; a third hole disposed on the upper surface of the body and connected to the lower plenum to receive a gas mixture; as well as a plurality of through holes passing through the lower surface of the body and in fluid communication with the lower plenum, The upper inflatable chamber includes a first upper inflatable chamber, a second upper inflatable chamber and a partition, wherein the partition is arranged between the first upper inflatable chamber and the second upper inflatable chamber, and further includes an outer inflatable chamber located below the upper inflatable chamber and outside the lower inflatable chamber.

10. The vapor delivery head of claim 9, wherein the heated fluid flows into the first aperture, into the first upper plenum, into the outer plenum, into the second upper plenum, and out through the second aperture.

11. A vapor delivery head for wet processing of substrates, comprising: a body comprising an upper surface, a lower surface, an upper plenum, and a lower plenum, wherein the body comprises a first side, a second side, and a third side, wherein the body has a fan-shaped shape; a first hole disposed on the upper surface of the body and fluidly connected to the upper plenum to supply heated fluid; a second aperture disposed on the upper surface of the body and connected to the upper plenum for removing heated fluid; a third hole disposed on the upper surface of the body and connected to the lower plenum to receive a gas mixture; a plurality of through holes extending through the lower surface of the body and in fluid communication with the lower plenum; as well as a baffle disposed within the lower plenum between the third aperture and the lower plenum and comprising a plurality of baffle portions disposed about an opening into the lower plenum to distribute more of the gas mixture to an area adjacent the third side than to an area adjacent a junction of the first and second sides.

12. The vapor delivery head of claim 11, wherein the plurality of baffle sections comprises: a first baffle portion; a second baffle portion; as well as The third baffle portion, The first baffle portion, the second baffle portion, and the third baffle portion are arranged 120° apart around the opening into the lower plenum, and the first baffle portion is located closest to the third side on a radial line of the main body.

13. An apparatus for wet processing of a substrate, comprising: a chuck for holding the substrate and rotating the substrate; as well as The vapor delivery head of any one of claims 1-12, wherein the lower surface of the body is arranged parallel to the substrate during processing.

14. A method for wet processing of a substrate, comprising: Using the apparatus of claim 13 to direct the gas mixture containing hydrogen fluoride over the upper surface of the substrate.

15. The method of claim 14, further comprising, before using the apparatus to direct the gas mixture over the surface of the substrate: Spin-rinsing the surface of the substrate using a first rinsing liquid; and The first rinse liquid is thrown away from the surface of the substrate.

16. The method of claim 15, wherein the hydrogen fluoride is a first reactive component and the gas mixture further contains a second reactive component.

17. The method of claim 16, wherein at least one of the following is present: The second reactive component is a proton acceptor; and / or The second reactive component includes an OH-group.

18. The method of claim 16, wherein the second reactive component is selected from the group consisting of water vapor, alcohol vapor, ammonia, and amine.

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