Substrate processing apparatus and apparatus cleaning method

Abstract

The present invention provides a substrate processing apparatus and an apparatus cleaning method that can suppress clogging of a liquid discharge pipe in a substrate processing apparatus performing batch processing. The substrate processing apparatus of the present invention includes: a processing tank, a liquid receiving portion, a liquid receiving portion discharge pipe, a storage portion, a first liquid supply pipe, a second liquid supply pipe, a release pipe, a first liquid flow rate adjustment portion, and a second liquid flow rate adjustment portion. The liquid receiving portion receives the processing liquid spilled from the processing tank. The liquid receiving portion discharge pipe discharges the processing liquid from the liquid receiving portion. The first liquid supply pipe supplies a first liquid of a cleaning liquid, which contains the first liquid and the second liquid and is used to remove precipitates from the processing liquid. The second liquid supply pipe supplies the second liquid. The release pipe is connected to the first liquid supply pipe and the second liquid supply pipe and releases the cleaning liquid, the first liquid, or the second liquid to the liquid receiving portion. The first liquid flow rate adjustment portion is provided in the first liquid supply pipe and adjusts the flow rate of the first liquid flowing in the first liquid supply pipe. The second liquid flow rate adjustment portion is provided in the second liquid supply pipe and adjusts the flow rate of the second liquid flowing in the second liquid supply pipe.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a method for cleaning the apparatus. Background Art

[0002] In the prior art, a batch process is performed by immersing a lot formed of a plurality of substrates in a processing tank storing a processing liquid, and processing the substrates in the lot all at once.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Laid-Open No. 3-38827 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] The present invention provides a technique for suppressing clogging of a drainage pipe in a substrate processing apparatus that performs batch processing.

[0008] Technical Solution for Solving the Technical Problem

[0009] A substrate processing apparatus according to one aspect of the present invention includes: a processing tank, a liquid receiving portion, a liquid receiving portion discharge pipe, a storage portion, a first liquid supply pipe, a second liquid supply pipe, a release pipe, a first liquid flow rate adjustment portion, and a second liquid flow rate adjustment portion. The processing tank can accommodate a plurality of substrates and store a processing liquid. The liquid receiving portion receives the processing liquid spilled from the processing tank. The liquid receiving portion discharge pipe discharges the processing liquid from the liquid receiving portion. The storage portion is connected to the liquid receiving portion via the liquid receiving portion discharge pipe and stores the processing liquid discharged from the liquid receiving portion. The first liquid supply pipe supplies a first liquid of a cleaning liquid, which contains a first liquid and a second liquid and is used to remove precipitates from the processing liquid. The second liquid supply pipe supplies the second liquid. The release pipe is connected to the first liquid supply pipe and the second liquid supply pipe and releases the cleaning liquid, the first liquid, or the second liquid to the liquid receiving portion. The first liquid flow rate adjustment portion is provided in the first liquid supply pipe and adjusts the flow rate of the first liquid flowing in the first liquid supply pipe. The second liquid flow rate adjustment portion is provided in the second liquid supply pipe and adjusts the flow rate of the second liquid flowing in the second liquid supply pipe.

[0010] Advantageous Effects of the Invention

[0011] According to the present invention, clogging of a drainage pipe can be suppressed in a substrate processing apparatus that performs batch processing. Brief Description of the Drawings

[0012] Figure 1 is a top view of the substrate processing apparatus according to the embodiment.

[0013] Figure 2 is a block diagram showing the structure of the processing tank for etching according to the embodiment.

[0014] Figure 3 It is a diagram showing the structure of the etching processing apparatus of the embodiment.

[0015] Figure 4 It is a flowchart showing the process of the cleaning process of the embodiment.

[0016] Figure 5 It is a flowchart showing the process of the cleaning process of the first modification example.

[0017] Figure 6 It is a flowchart showing the process of the cleaning process of the second modification example.

[0018] Figure 7 It is a flowchart showing the process of the cleaning process of the third modification example.

[0019] Figure 8 It is a diagram showing the structure of the cleaning unit of the fourth modification example.

[0020] Figure 9 It is a diagram showing the structure of the cleaning unit of the fifth modification example.

[0021] Explanation of reference numerals

[0022] W Wafer

[0023] 1 Substrate processing apparatus

[0024] 60 Etching processing apparatus

[0025] 61 Processing tank

[0026] 200 Liquid receiving part

[0027] 201 First liquid receiving part

[0028] 202 Second liquid receiving part

[0029] 210 Liquid receiving part discharge pipe

[0030] 211 First discharge pipe

[0031] 212 Second discharge pipe

[0032] 220 Processing tank discharge pipe

[0033] 230 Cooling box

[0034] 240 Cleaning unit

[0035] 243 DIW supply pipe

[0036] 244 HF supply pipe

[0037] 245 DIW flow regulator

[0038] 246 HF Flow Regulator Detailed Embodiment

[0039] Next, with reference to the accompanying drawings, embodiments of the substrate processing apparatus and the apparatus cleaning method of the present invention (hereinafter referred to as "embodiments") will be described in detail. In addition, the substrate processing apparatus and the apparatus cleaning method of the present invention are not limited by this embodiment. In addition, the respective embodiments can be appropriately combined within a range where the processing contents do not conflict. In addition, in the following respective embodiments, the same reference numerals are assigned to the same parts, and repeated descriptions are omitted.

[0040] In addition, in the respective drawings referred to below, for the sake of easy explanation, an orthogonal coordinate system that defines the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other and has the positive Z-axis direction as the vertically upward direction is sometimes shown.

[0041] <Structure of Substrate Processing Apparatus>

[0042] First, with reference to Figure 1 , the structure of the substrate processing apparatus according to the embodiment will be described. Figure 1 is a top view of the substrate processing apparatus 1 according to the embodiment.

[0043] As Figure 1 shown, the substrate processing apparatus 1 according to the embodiment includes: a carrier loading / unloading unit 2, a lot forming unit 3, a lot placing unit 4, a lot conveying unit 5, a lot processing unit 6, and a control unit 7.

[0044] The carrier loading / unloading unit 2 includes: a carrier stage 20, a carrier conveying mechanism 21, carrier stocks 22, 23, and a carrier placing table 24.

[0045] The carrier stage 20 places a plurality of carriers 9 conveyed from the outside. The carrier 9 is a container that houses a plurality of (for example, 25) wafers W arranged horizontally one above the other. The carrier conveying mechanism 21 conveys the carrier 9 between the carrier stage 20, the carrier stocks 22, 23, and the carrier placing table 24.

[0046] A plurality of wafers W before processing are sent from the carrier 9 placed on the carrier placing table 24 to the lot processing unit 6 by the substrate conveying mechanism 30 described later. Moreover, a plurality of wafers W after processing are sent from the lot processing unit 6 to the carrier 9 placed on the carrier placing table 24 by the substrate conveying mechanism 30.

[0047] The lot forming unit 3 has a substrate transfer mechanism 30 that forms a lot. A lot is composed of a plurality (e.g., 50) of wafers W that are combined from wafers W stored in one or more carriers 9 and are processed simultaneously. The plurality of wafers W forming one lot are arranged at a certain interval with their plate surfaces facing each other.

[0048] The substrate transfer mechanism 30 transfers a plurality of wafers W between the carrier 9 placed on the carrier mounting table 24 and the lot mounting unit 4.

[0049] The lot mounting unit 4 has a lot transfer table 40 that temporarily mounts (makes it standby) the lot transferred between the lot forming unit 3 and the lot processing unit 6 by the lot transfer unit 5. The lot transfer table 40 has: a feed side lot mounting table 41 that mounts the lot before processing formed by the lot forming unit 3; and a discharge side lot mounting table 42 that mounts the lot after being processed by the lot processing unit 6. The plurality of wafers W of one lot are mounted on the feed side lot mounting table 41 and the discharge side lot mounting table 42 in a standing posture and arranged one after another.

[0050] The lot transfer unit 5 has a lot transfer mechanism 50 that transfers the lot between the lot mounting unit 4 and the lot processing unit 6 or inside the lot processing unit 6. The lot transfer mechanism 50 has: a guide rail 51, a moving body 52, and a substrate holding body 53.

[0051] The guide rail 51 is arranged in the X-axis direction straddling the lot mounting unit 4 and the lot processing unit 6. The moving body 52 can move along the guide rail 51 while holding a plurality of wafers W. The substrate holding body 53 is provided on the moving body 52 and holds a plurality of wafers W arranged one after another in a standing posture.

[0052] The lot processing unit 6 performs etching processing, cleaning processing, drying processing, etc. on a plurality of wafers W arranged one after another in a standing posture as one lot. In the lot processing unit 6, two etching processing devices 60, a cleaning processing device 70, a substrate holding body cleaning processing device 80, and a drying processing device 90 are arranged side by side along the guide rail 51.

[0053] The etching processing device 60 performs etching processing on the lot. The cleaning processing device 70 performs cleaning processing on the lot. The substrate holding body cleaning processing device 80 performs cleaning processing on the substrate holding body 53. The drying processing device 90 performs drying processing on the lot. Among them, the number of the etching processing device 60, the cleaning processing device 70, the substrate holding body cleaning processing device 80, and the drying processing device 90 is not limited to Figure 1 the example.

[0054] The etching processing device 60 includes: a processing tank 61 for etching, a processing tank 62 for rinsing, and substrate lifting mechanisms 63, 64.

[0055] The processing tank 61 can accommodate a batch of wafers W arranged in an upright posture and store a processing liquid for etching (hereinafter also referred to as "etching liquid"). Details of the processing tank 61 will be described later.

[0056] A processing liquid for rinsing (such as pure water) is stored in the processing tank 62. A plurality of wafers W forming a batch are held in a substrate lifting mechanism 63, 64 in an upright posture and arranged one after another.

[0057] The etching processing apparatus 60 holds the batch conveyed by the batch conveying unit 5 with the substrate lifting mechanism 63 and immerses it in the etching liquid in the processing tank 61 to perform etching processing. The etching processing is performed for about 1 hour to 3 hours, for example.

[0058] The batch that has undergone etching processing in the processing tank 61 is conveyed by the batch conveying unit 5 to the processing tank 62. Then, the etching processing apparatus 60 holds the conveyed batch with the substrate lifting mechanism 64 and immerses it in the rinsing liquid in the processing tank 62 to perform rinsing processing. The batch that has undergone rinsing processing in the processing tank 62 is conveyed by the batch conveying unit 5 to the processing tank 71 of the cleaning processing apparatus 70.

[0059] The cleaning processing apparatus 70 includes: a processing tank 71 for cleaning, a processing tank 72 for rinsing, and substrate lifting mechanisms 73, 74. A processing liquid for cleaning (such as SC-1 (a mixed liquid of ammonia, hydrogen peroxide, and water), etc.) is stored in the processing tank 71 for cleaning.

[0060] A processing liquid for rinsing (such as pure water) is stored in the processing tank 72 for rinsing. A plurality of wafers W in a batch are held in the substrate lifting mechanisms 73, 74 in an upright posture and arranged one after another.

[0061] The cleaning processing apparatus 70 holds the batch conveyed by the batch conveying unit 5 with the substrate lifting mechanism 73 and immerses it in the cleaning liquid in the processing tank 71 to perform cleaning processing.

[0062] The batch that has undergone cleaning processing in the processing tank 71 is conveyed by the batch conveying unit 5 to the processing tank 72. Then, the cleaning processing apparatus 70 holds the conveyed batch with the substrate lifting mechanism 74 and immerses it in the rinsing liquid in the processing tank 72 to perform rinsing processing. The batch that has undergone rinsing processing in the processing tank 72 is conveyed by the batch conveying unit 5 to the processing tank 91 of the drying processing apparatus 90.

[0063] The drying processing apparatus 90 has: a processing tank 91 and a substrate lifting mechanism 92. A processing gas for drying (such as IPA (isopropyl alcohol), etc.) is supplied to the processing tank 91. A plurality of wafers W in a batch are held in the substrate lifting mechanism 92 in an upright posture and arranged one after another.

[0064] The substrate lifting mechanism 92 of the drying processing device 90 holds the lot conveyed by the lot conveying unit 5 and performs drying processing using the processing gas for drying supplied into the processing tank 91. The lot that has undergone drying processing in the processing tank 91 is conveyed by the lot conveying unit 5 to the lot placement unit 4.

[0065] The substrate holder cleaning processing device 80 supplies a processing liquid for cleaning to the substrate holder 53 of the lot conveying mechanism 50 and further supplies a drying gas, thereby performing cleaning processing of the substrate holder 53.

[0066] The control unit 7 controls the operations of the respective parts of the substrate processing device 1 (the carrier loading / unloading unit 2, the lot forming unit 3, the lot placement unit 4, the lot conveying unit 5, the lot processing unit 6, etc.). The control unit 7 controls the operations of the respective parts of the substrate processing device 1 based on signals from switches, various sensors, etc.

[0067] The control unit 7 is, for example, a computer and has a computer-readable storage medium 8. Programs for controlling various processes executed in the substrate processing device 1 are stored in the storage medium 8.

[0068] The control unit 7 controls the operation of the substrate processing device 1 by reading and executing the programs stored in the storage medium 8. In addition, the programs can also be stored in a computer-readable storage medium 8 and installed from another storage medium into the storage medium 8 of the control unit 7.

[0069] Examples of the computer-readable storage medium 8 include a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disc (MO), a memory card, etc.

[0070] <Structure of the Processing Tank for Etching>

[0071] Next, with reference to Figure 2 , the processing tank 61 for etching will be described. Figure 2 is a block diagram showing the structure of the processing tank 61 for etching according to the embodiment.

[0072] In the processing tank 61, etching processing is performed, that is, using a prescribed etching liquid, the silicon nitride film (SiN) among the silicon nitride film and the silicon oxide film (SiO2) formed on the wafer W is selectively etched. In the above etching processing, a solution in which a silicon (Si)-containing compound is added to an aqueous phosphoric acid (H3PO4) solution and the silicon concentration is adjusted is used as the etching liquid.

[0073] As a method for adjusting the silicon concentration in the etching solution, a method of dissolving silicon by immersing a simulation substrate in an aqueous phosphoric acid solution (seasoning) or a method of dissolving a silicon-containing compound such as colloidal silica in an aqueous phosphoric acid solution can be used. In addition, an aqueous solution of a silicon-containing compound can be added to the aqueous phosphoric acid solution to adjust the silicon concentration.

[0074] As Figure 2 shown, the processing tank 61 for etching includes an inner tank 101 and an outer tank 102. The inner tank 101 is a box-shaped tank open at the top and stores the etching solution inside. A batch formed by a plurality of wafers W is immersed in the inner tank 101. The outer tank 102 is open at the top and is disposed around the upper part of the inner tank 101. The overflowing etching solution flows from the inner tank 101 to the outer tank 102.

[0075] In addition, the processing tank 61 includes: an aqueous phosphoric acid solution supply unit 103, a silicon supply unit 104, and a DIW supply unit 105.

[0076] The aqueous phosphoric acid solution supply unit 103 has: an aqueous phosphoric acid solution supply source 131, an aqueous phosphoric acid solution supply pipe 132, and a flow regulator 133.

[0077] The aqueous phosphoric acid solution supply source 131 supplies an aqueous phosphoric acid solution in which the phosphoric acid concentration is concentrated to a required concentration. The aqueous phosphoric acid solution supply pipe 132 is connected to the aqueous phosphoric acid solution supply source 131 and the outer tank 102, and supplies the aqueous phosphoric acid solution from the aqueous phosphoric acid solution supply source 131 to the outer tank 102.

[0078] The flow regulator 133 is provided in the aqueous phosphoric acid solution supply pipe 132 and adjusts the supply amount of the aqueous phosphoric acid solution supplied to the outer tank 102. The flow regulator 133 is composed of an on-off valve, a flow control valve, a flow meter, etc.

[0079] The silicon supply unit 104 has a silicon supply source 141, a silicon supply pipe 142, and a flow regulator 143.

[0080] The silicon supply source 141 is a storage tank for storing an aqueous solution of a silicon-containing compound. The silicon supply pipe 142 is connected to the silicon supply source 141 and the outer tank 102, and supplies the aqueous solution of the silicon-containing compound from the silicon supply source 141 to the outer tank 102.

[0081] The flow regulator 143 is provided in the silicon supply pipe 142 and adjusts the supply amount of the aqueous solution of the silicon-containing compound supplied to the outer tank 102. The flow regulator 143 is composed of an on-off valve, a flow control valve, a flow meter, etc. By adjusting the supply amount of the aqueous solution of the silicon-containing compound with the flow regulator 143, the silicon concentration of the etching solution can be adjusted.

[0082] The DIW supply unit 105 includes a DIW supply source 151, a DIW supply pipeline 152, and a flow regulator 153. The DIW supply unit 105 supplies DIW (DeIonized Water: pure water) to the outer tank 102 to replenish the water evaporated due to heating the etching solution.

[0083] The DIW supply pipeline 152 is connected to the DIW supply source 151 and the outer tank 102, and supplies DIW at a specified temperature from the DIW supply source 151 to the outer tank 102.

[0084] The flow regulator 153 is provided in the DIW supply pipeline 152 to adjust the supply amount of the DIW supplied to the outer tank 102. The flow regulator 153 is composed of an on-off valve, a flow control valve, a flow meter, etc. By adjusting the supply amount of the DIW with the flow regulator 153, the temperature, phosphoric acid concentration, and silicon concentration of the etching solution can be adjusted.

[0085] In addition, the processing tank 61 includes a circulation unit 106. The circulation unit 106 circulates the etching solution between the inner tank 101 and the outer tank 102. The circulation unit 106 includes a circulation pipeline 161, a plurality of processing liquid supply nozzles 162, a filter 163, a heater 164, and a pump 165.

[0086] The circulation pipeline 161 connects the outer tank 102 and the inner tank 101. One end of the circulation pipeline 161 is connected to the outer tank 102, and the other end of the circulation pipeline 161 is connected to a plurality of processing liquid supply nozzles 162 disposed inside the inner tank 101.

[0087] The filter 163, the heater 164, and the pump 165 are provided in the circulation pipeline 161. The filter 163 removes impurities from the etching solution flowing in the circulation pipeline 161. The heater 164 heats the etching solution flowing in the circulation pipeline 161 to a temperature suitable for the etching process. The pump 165 sends the etching solution in the outer tank 102 to the circulation pipeline 161. The filter 163, the heater 164, and the pump 165 are arranged in this order from the upstream side.

[0088] The circulation unit 106 sends the etching solution from the outer tank 102 to the inner tank 101 via the circulation pipeline 161 and a plurality of processing liquid supply nozzles 162. The etching solution sent to the inner tank 101 overflows from the inner tank 101 and flows out to the outer tank 102 again. In this way, the etching solution circulates between the inner tank 101 and the outer tank 102.

[0089] In addition, the circulation unit 106 can also heat the etching solution with the heater 164 to make the etching solution in a boiling state.

[0090] <Structure of the liquid holding part and the cleaning part>

[0091] A liquid receiving portion for receiving the etching solution spilled from the processing tank 61 is disposed around the processing tank 61. As described above, a silicon-containing compound is added to the etching solution. However, since the temperature of the etching solution decreases, the silicon-containing compound (e.g., SiO2) dissolved in the etching solution may precipitate. That is, SiO2 may precipitate in the liquid receiving portion or the drainage path for discharging the etching solution from the liquid receiving portion, and the drainage path may be blocked due to the precipitated SiO2.

[0092] The etching processing apparatus 60 of the embodiment has a cleaning function for automatically cleaning the liquid receiving portion and the discharge path, and can effectively suppress the blockage of the discharge path of the processing liquid. Refer to Figure 3 The structure of the above-described etching processing apparatus 60 will be described. Figure 3 It is a diagram showing the structure of the etching processing apparatus 60 of the embodiment.

[0093] As Figure 3 shown, the etching processing apparatus 60 includes: a liquid receiving portion 200, a liquid receiving portion discharge pipe 210, a processing tank discharge pipe 220, a cooling tank 230, and a cleaning portion 240.

[0094] The liquid receiving portion 200 is a container for receiving the etching solution spilled from the processing tank 61. The liquid receiving portion 200 includes a first liquid receiving portion 201 and a second liquid receiving portion 202. Herein, the "etching solution spilled from the processing tank 61" refers to the etching solution that has leaked, scattered, or overflowed from the inner tank 101 or the outer tank 102 and has leaked out of the inner tank 101 or the outer tank 102.

[0095] The first liquid receiving portion 201 is disposed below the processing tank 61. The first liquid receiving portion 201 receives, for example, the etching solution that has dripped from the processing tank 61 due to overflow or leakage from the processing tank 61.

[0096] The lower part of the side surface of the first liquid receiving portion 201 is connected to a first discharge pipe 211 for discharging the etching solution received by the first liquid receiving portion 201 from the first liquid receiving portion 201. In Figure 3 the example shown, the first discharge pipe 211 is connected to the lower part of the side surface of the first liquid receiving portion 201 on the positive X-axis side.

[0097] The second liquid receiving portion 202 has a larger volume than the first liquid receiving portion 201, and houses the processing tank 61 and the first liquid receiving portion 201 therein. The second liquid receiving portion 202 receives, for example, the etching solution that has scattered from the processing tank 61 due to boiling.

[0098] The bottom surface 201a of the first liquid receiving portion 201 is inclined toward the first discharge pipe 211. That is, the bottom surface 201a of the first liquid receiving portion 201 is formed such that the negative X-axis side is higher than the positive X-axis side.

[0099] Thus, the etching liquid received by the first liquid holding portion 201 can be effectively discharged from the first liquid holding portion 201. In addition, the remaining of the etching liquid in the first liquid holding portion 201 can be suppressed.

[0100] The lower side of the second liquid holding portion 202 is connected to a second discharge pipe 212 for discharging the etching liquid received by the second liquid holding portion 202 from the second liquid holding portion 202. Figure 3 In the example shown, the second discharge pipe 212 is connected to the lower side of the side surface of the second liquid holding portion 202 in the positive X-axis direction.

[0101] The liquid holding portion discharge pipe 210 connects the liquid holding portion 200 and the cooling tank 230, and discharges the etching liquid received by the liquid holding portion 200 to the cooling tank 230. The liquid holding portion discharge pipe 210 branches into the above-mentioned first discharge pipe 211 and second discharge pipe 212 on the upstream side. The first discharge pipe 211 is connected to the first liquid holding portion 201, and the second discharge pipe 212 is connected to the second liquid holding portion 202.

[0102] In addition, the liquid holding portion discharge pipe 210 may independently have the first discharge pipe 211 and the second discharge pipe 212.

[0103] The processing tank discharge pipe 220 is connected to the processing tank 61. Specifically, it connects the inner tank 101 and the cooling tank 230, and discharges the etching liquid stored in the inner tank 101 from the inner tank 101 to the cooling tank 230. An on-off valve 221 for opening and closing the processing tank discharge pipe 220 is provided in the middle of the processing tank discharge pipe 220.

[0104] The cooling tank 230 is connected to the first liquid holding portion 201 and the second liquid holding portion 202 via the liquid holding portion discharge pipe 210. And the cooling tank 230 is connected to the processing tank 61 via the processing tank discharge pipe 220. The cooling tank 230 temporarily stores the etching liquid discharged from the processing tank 61, the first liquid holding portion 201, and the second liquid holding portion 202.

[0105] The cooling tank 230 is connected to a cooling tank discharge pipe 231 for discharging the etching liquid stored in the cooling tank 230 from the cooling tank 230. An on-off valve 232 for opening and closing the cooling tank discharge pipe 231 is provided in the cooling tank discharge pipe 231.

[0106] The etching liquid discharged from the processing tank 61, the first liquid holding portion 201, and the second liquid holding portion 202 is cooled after being stored in the cooling tank 230, and then is discharged to the outside of the substrate processing apparatus 1 via the cooling tank discharge pipe 231.

[0107] The cleaning unit 240 supplies a cleaning liquid for cleaning the liquid holding portion 200, the liquid holding portion discharge pipe 210, the cooling tank 230, and the cooling tank discharge pipe 231 to the liquid holding portion 200.

[0108] The cleaning unit 240 includes a DIW supply source 241 and an HF supply source 242. The DIW supply source 241 supplies DIW. The HF supply source 242 supplies HF (liquid hydrogen fluoride).

[0109] In addition, the cleaning unit 240 includes: a DIW supply pipe 243, an HF supply pipe 244, a DIW flow regulator 245, an HF flow regulator 246, a first DIW on-off valve 247a, a second DIW on-off valve 247b, a first HF on-off valve 248a, and a second HF on-off valve 248b. In addition, the cleaning unit 240 includes: a first mixing unit 249a, a second mixing unit 249b, a first discharge pipe 250a, and a second discharge pipe 250b.

[0110] The DIW supply pipe 243 is connected to the DIW supply source 241. The DIW supply pipe 243 branches into a first DIW supply pipe 243a and a second DIW supply pipe 243b in the middle. The first DIW supply pipe 243a is connected to the first mixing unit 249a via the first DIW on-off valve 247a. The second DIW supply pipe 243b is connected to the second mixing unit 249b via the second DIW on-off valve 247b.

[0111] The HF supply pipe 244 is connected to the HF supply source 242. The HF supply pipe 244 branches into a first HF supply pipe 244a and a second HF supply pipe 244b in the middle. The first HF supply pipe 244a is connected to the first mixing unit 249a via the first HF on-off valve 248a. The second HF supply pipe 244b is connected to the second mixing unit 249b via the second HF on-off valve 248b.

[0112] The DIW flow regulator 245 is provided on the upstream side of the branch point of the first DIW supply pipe 243a and the second DIW supply pipe 243b in the DIW supply pipe 243, and regulates the flow rate of the DIW flowing in the DIW supply pipe 243. The HF flow regulator 246 is provided on the upstream side of the branch point of the first HF supply pipe 244a and the second HF supply pipe 244b in the HF supply pipe 244, and regulates the flow rate of the HF flowing in the HF supply pipe 244.

[0113] The first DIW on-off valve 247a is provided in the middle of the first DIW supply pipe 243a to open and close the first DIW supply pipe 243a. The second DIW on-off valve 247b is provided in the middle of the second DIW supply pipe 243b to open and close the second DIW supply pipe 243b. The first HF on-off valve 248a is provided in the middle of the first HF supply pipe 244a to open and close the first HF supply pipe 244a. The second HF on-off valve 248b is provided in the middle of the second HF supply pipe 244b to open and close the second HF supply pipe 244b.

[0114] The first mixing unit 249a is connected to the first DIW supply pipe 243a and the first HF supply pipe 244a on the upstream side. The first mixing unit 249a mixes the DIW supplied from the DIW supply source 241 via the first DIW supply pipe 243a with the HF supplied from the HF supply source 242 via the first HF supply pipe 244a.

[0115] The second mixing unit 249b is connected to the second DIW supply pipe 243b and the second HF supply pipe 244b on the upstream side. The second mixing unit 249b mixes the DIW supplied from the DIW supply source 241 via the second DIW supply pipe 243b with the HF supplied from the HF supply source 242 via the second HF supply pipe 244b.

[0116] The first discharge pipe 250a is connected to the first mixing unit 249a on the upstream side, and discharges the mixed solution of DIW and HF (dilute hydrofluoric acid), i.e., DHF, generated by the first mixing unit 249a onto the bottom surface 201a of the first liquid receiving part 201. In addition, when the first DIW on-off valve 247a is open and the first HF on-off valve 248a is closed, the first discharge pipe 250a can discharge DIW. Further, when the first DIW on-off valve 247a is closed and the first HF on-off valve 248a is open, the first discharge pipe 250a can discharge HF.

[0117] The second discharge pipe 250b is connected to the second mixing unit 249b on the upstream side, and discharges the DHF generated by the second mixing unit 249b onto the bottom surface 202a of the second liquid receiving part 202. In addition, when the second DIW on-off valve 247b is open and the second HF on-off valve 248b is closed, the second discharge pipe 250b can discharge DIW. Further, when the second DIW on-off valve 247b is closed and the second HF on-off valve 248b is open, the second discharge pipe 250b can discharge HF.

[0118] The HF contained in the cleaning liquid can dissolve the SiO2 precipitated from the etching liquid. Therefore, by supplying DHF as the cleaning liquid to the liquid receiving part 200, the SiO2 attached to the liquid receiving part 200 can be dissolved and removed from the liquid receiving part 200. In addition, the cleaning liquid supplied to the liquid receiving part 200 flows through the liquid receiving part discharge pipe 210, the cooling tank 230, and the cooling tank discharge pipe 231. Therefore, the SiO2 attached to the liquid receiving part discharge pipe 210, the cooling tank 230, and the cooling tank discharge pipe 231 can be dissolved and removed from the liquid receiving part discharge pipe 210, the cooling tank 230, and the cooling tank discharge pipe 231.

[0119] As described above, the etching processing apparatus 60 of the embodiment can dissolve SiO2 adhering to the liquid holding part 200, the liquid holding part discharge pipe 210, the cooling box 230, and the cooling box discharge pipe 231 by supplying a cleaning liquid containing HF to the liquid holding part 200. Therefore, according to the etching processing apparatus 60 of the embodiment, clogging of the etching liquid in the discharge path can be suppressed.

[0120] <Specific operations of the etching processing apparatus>

[0121] Figure 4 is a flowchart showing the process of the cleaning process of the embodiment. In addition, the etching processing apparatus 60 executes the Figure 4 processing flow shown.

[0122] As Figure 4 shown, the etching processing apparatus 60 first releases DHF to the liquid holding part 200 (step S001). Specifically, the etching processing apparatus 60 opens the first DIW opening / closing valve 247a, the second DIW opening / closing valve 247b, the first HF opening / closing valve 248a, and the second HF opening / closing valve 248b. Thereby, DIW and HF are supplied to the first mixing part 249a, and the DHF mixed by the first mixing part 249a is supplied from the first release pipe 250a to the first liquid holding part 201. Moreover, DIW and HF are supplied to the second mixing part 249b, and the DHF mixed by the second mixing part 249b is supplied from the second release pipe 250b to the second liquid holding part 202.

[0123] Next, the etching processing apparatus 60 closes the first HF opening / closing valve 248a and the second HF opening / closing valve 248b to release DIW to the liquid holding part 200 (step S002). After that, the etching processing apparatus 60 closes the first DIW opening / closing valve 247a and the second DIW opening / closing valve 247b, thereby stopping the release of DIW to the liquid holding part 200 and ending the cleaning process.

[0124] As described above, the etching processing apparatus 60 may also release DIW to the liquid holding part 200 after releasing DHF to the liquid holding part 200, and then end the cleaning process. Thereby, it is possible to suppress the remaining DHF in the liquid holding part 200, the liquid holding part discharge pipe 210, the cooling box 230, and the cooling box discharge pipe 231.

[0125] <Modification example of the cleaning process>

[0126] Here, with reference to Figures 5 - 7 , another example of the above cleaning process will be described. Figure 5 is a flowchart showing the process of the cleaning process of the first modification example. Figure 6 is a flowchart showing the process of the cleaning process of the second modification example. Figure 7It is a flowchart showing the process of the cleaning process of the third modification example. In addition, the etching processing apparatus 60 executes the Figures 5 - 7 processing process shown.

[0127] As Figure 5 shown, the etching processing apparatus 60 first opens each of the on-off valves 247a, 247b, 248a, and 248b to release DHF of the first concentration to the first liquid holding portion 201 and the second liquid holding portion 202 (step S101). The DHF of the first concentration is obtained by adjusting the flow rates of DIW and HF using the DIW flow rate regulator 245 and the HF flow rate regulator 246.

[0128] Next, the etching processing apparatus 60 releases DHF of the second concentration, which is lower than the first concentration, to the first liquid holding portion 201 and the second liquid holding portion 202 (step S102). For example, the etching processing apparatus 60 can generate DHF of the second concentration by changing the flow rate ratio of DIW and HF using the DIW flow rate regulator 245 and the HF flow rate regulator 246.

[0129] As described above, the etching processing apparatus 60 may also release DHF of the second concentration, which has a lower HF concentration, to the liquid holding portion 200 after releasing DHF of the first concentration, which has a higher HF concentration, to the liquid holding portion 200. Thereby, the consumption amount of HF can be suppressed, and the liquid holding portion 200, the liquid holding portion discharge pipe 210, the cooling box 230, and the cooling box discharge pipe 231 can be effectively cleaned.

[0130] Next, the etching processing apparatus 60 closes the first HF on-off valve 248a and the second HF on-off valve 248b to release DIW to the first liquid holding portion 201 and the second liquid holding portion 202 (step S103). After that, the etching processing apparatus 60 closes the first DIW on-off valve 247a and the second DIW on-off valve 247b, thereby stopping the release of DIW to the first liquid holding portion 201 and the second liquid holding portion 202 (step S104), and ending the cleaning process.

[0131] As another example, as Figure 6 shown, the etching processing apparatus 60 first opens each of the on-off valves 247a, 247b, 248a, and 248b to release DHF to the first liquid holding portion 201 and the second liquid holding portion 202 (step S201). After that, the etching processing apparatus 60 closes each of the on-off valves 247a, 247b, 248a, and 248b to stop the release of DHF to the first liquid holding portion 201 and the second liquid holding portion 202 (step S202).

[0132] Next, the etching processing apparatus 60 determines whether the processes of steps S201 and S202 have been repeated a set number of times (step S203). In this process, when the number of times the processes of steps S201 and S202 are repeated has not reached the set number (step S203, No), the etching processing apparatus 60 returns the process to step S201 and repeats the processes of steps S201 and S202.

[0133] On the other hand, in step S203, it is determined that the processes of steps S201 and S202 have been repeated a set number of times (step S203, Yes). In this case, the etching processing apparatus 60 closes the first HF on-off valve 248a and the second HF on-off valve 248b to discharge DIW to the first liquid storage portion 201 and the second liquid storage portion 202 (step S204). After that, the etching processing apparatus 60 closes the first DIW on-off valve 247a and the second DIW on-off valve 247b, thereby stopping the discharge of DIW to the first liquid storage portion 201 and the second liquid storage portion 202 (step S205), and ending the cleaning process.

[0134] As described above, the etching processing apparatus 60 can also intermittently discharge DHF to the liquid storage portion 200. Thereby, compared with the case of continuously discharging DHF, the flow of DHF can be made chaotic. Therefore, the physical force for peeling off foreign substances such as SiO2 from the liquid storage portion 200 and the like can be increased.

[0135] In addition, the etching processing apparatus 60 can also repeat the processes of steps S204 and S205 a set number of times. That is, the etching processing apparatus 60 can not only intermittently discharge DHF but also intermittently discharge DIW. In this case, the etching processing apparatus 60 can make the interval from when the discharge of DIW stops to when the discharge of DIW starts again shorter than the interval from when the discharge of DHF stops to when the discharge of DHF starts again. Thereby, it is possible to more reliably suppress the remaining DHF in the liquid storage portion 200, the liquid storage portion discharge pipe 210, the cooling box 230, and the cooling box discharge pipe 231.

[0136] As another example, as Figure 7 shown, the etching processing apparatus 60 first opens the first HF on-off valve 248a and the second HF on-off valve 248b to discharge HF to the first liquid storage portion 201 and the second liquid storage portion 202 (step S301). Then, the etching processing apparatus 60 closes the first HF on-off valve 248a and the second HF on-off valve 248b to stop the discharge of HF to the first liquid storage portion 201 and the second liquid storage portion 202 (step S302).

[0137] Next, the etching processing apparatus 60 closes the first HF on-off valve 248a and the second HF on-off valve 248b, and opens the first DIW on-off valve 247a and the second DIW on-off valve 247b. Thereby, the etching processing apparatus 60 discharges DIW to the first liquid receiving portion 201 and the second liquid receiving portion 202 (step S303). After that, the etching processing apparatus 60 closes the first DIW on-off valve 247a and the second DIW on-off valve 247b to stop discharging DIW to the first liquid receiving portion 201 and the second liquid receiving portion 202 (step S304).

[0138] Next, the etching processing apparatus 60 determines whether the processes of steps S301 to S304 have been repeated a set number of times (step S305). In this process, when the number of times of repeating the processes of steps S301 to S304 has not reached the set number of times (step S305, NO), the etching processing apparatus 60 returns the process to step S301 and repeats the processes of steps S301 to S304. On the other hand, in step S305, when it is determined that the processes of steps S301 to S304 have been repeated a set number of times (step S305, YES), the etching processing apparatus 60 ends the cleaning process.

[0139] As described above, the etching processing apparatus 60 may also alternately discharge HF and DIW to the liquid receiving portion 200. In this case, by mixing HF and DIW in the liquid receiving portion 200, DHF can be generated in the liquid receiving portion 200.

[0140] In addition, here, DIW is discharged after HF has been discharged to the liquid receiving portion 200, but the etching processing apparatus 60 may also discharge HF after DIW has been discharged to the liquid receiving portion 200. In this case, after it is determined in step S305 that the set number of repetitions has been reached, DIW may be discharged to the liquid receiving portion 200 for a certain period of time, and then the cleaning process may be ended.

[0141] <First discharge pipe modification example>

[0142] Next, with reference to Figure 8 and Figure 9 , a modification example of the cleaning unit will be described. Figure 8 is a diagram showing the structure of the cleaning unit of the fourth modification example. Figure 9 is a diagram showing the structure of the cleaning unit of the fifth modification example.

[0143] As Figure 8 shown, the cleaning unit 240A of the fourth modification example includes a discharge unit 251. The discharge unit 251 is connected to the downstream end of the first discharge pipe 250a.

[0144] The release part 251 is disposed above the upper part of the inclined bottom surface 201a of the first liquid receiving part 201. In other words, it is disposed above the side opposite to the side where the first discharge pipe 211 is provided. By being disposed at the above position, DHF or the like can flow along the bottom surface 201a serving as an inclined surface, and thus the flow rate of DHF or the like can be increased. In this way, by increasing the flow rate of DHF or the like, foreign matters attached to the first liquid receiving part 201 or the like can be removed more effectively.

[0145] The release part 251 includes a plurality of release ports 251a. The plurality of release ports 251a are arranged side by side in the width direction of the inclined bottom surface 201a (the horizontal direction orthogonal to the horizontally extending direction of the inclination, which is the Y-axis direction here). In this way, by arranging the plurality of release ports 251a in the width direction of the bottom surface 201a, DHF or the like can be sufficiently spread over the first liquid receiving part 201.

[0146] As Figure 9 shown, the cleaning part 240B of the fifth modification includes a plurality of release parts 252. The plurality of release parts 252 are connected to the downstream end of the first release pipe 250a. Figure 9 In the example shown, the cleaning part 240B includes two release parts 252. One of the two release parts 252 is disposed on one side of the two sides in the width direction of the bottom surface 201a, and the other of the two release parts 252 is disposed on the other side of the two sides in the width direction of the bottom surface 201a.

[0147] The release part 252 includes a plurality of release ports 252a. The plurality of release ports 252a are arranged side by side in the horizontally extending direction of the inclination of the bottom surface 201a (the horizontal component of the inclination direction), and are arranged side by side in the X-axis direction here. In this way, by arranging the plurality of release ports 252a in the inclination direction of the bottom surface 201a serving as an inclined surface, the first liquid receiving part 201 can be cleaned more effectively.

[0148] As described above, the substrate processing apparatus according to the embodiment (as an example, the etching processing apparatus 60) includes: a processing tank (as an example, the processing tank 61), a liquid receiving portion (as an example, the liquid receiving portion 200), a liquid receiving portion discharge pipe (as an example, the liquid receiving portion discharge pipe 210), a storage portion (as an example, the cooling box 230), a first liquid supply pipe (as an example, the DIW supply pipe 243), a second liquid supply pipe (as an example, the HF supply pipe 244), a release pipe (as an example, the first release pipe 250a and the second release pipe 250b), a first liquid flow rate adjusting portion (as an example, the DIW flow rate regulator 245), and a second liquid flow rate adjusting portion (as an example, the HF flow rate regulator 246). The processing tank can accommodate a plurality of substrates (as an example, wafers W) and perform processing of a processing liquid (as an example, an etching liquid). The liquid receiving portion receives the processing liquid spilled from the processing tank. The liquid receiving portion discharge pipe discharges the processing liquid from the liquid receiving portion. The storage portion is connected to the liquid receiving portion via the liquid receiving portion discharge pipe and stores the processing liquid discharged from the liquid receiving portion. The first liquid supply pipe supplies a first liquid of a cleaning liquid, which contains a first liquid (as an example, DIW) and a second liquid (as an example, HF) and is used to remove precipitates (as an example, SiO2) from the processing liquid. The second liquid supply pipe supplies the second liquid. The release pipe is connected to the first liquid supply pipe and the second liquid supply pipe and supplies the cleaning liquid, the first liquid, or the second liquid to the liquid receiving portion. The first liquid flow rate adjusting portion is provided in the first liquid supply pipe and adjusts the flow rate of the first liquid flowing in the first liquid supply pipe. The second liquid flow rate adjusting portion is provided in the second liquid supply pipe and adjusts the flow rate of the second liquid flowing in the second liquid supply pipe.

[0149] Therefore, in the substrate processing apparatus according to the embodiment, in a substrate processing apparatus that performs batch processing, clogging of the drain line can be suppressed.

[0150] The first liquid may be pure water, and the second liquid may be hydrogen fluoride. In addition, the processing liquid may contain phosphoric acid and a dissolved silicon-containing compound. The hydrogen fluoride contained in the cleaning liquid, i.e., dilute hydrofluoric acid, can dissolve SiO2 precipitated from the processing liquid. Therefore, by supplying dilute hydrofluoric acid as the cleaning liquid to the liquid receiving portion, the SiO2 attached to the liquid receiving portion can be dissolved and removed from the liquid receiving portion. In addition, the cleaning liquid supplied to the liquid receiving portion flows through the liquid receiving portion discharge pipe and the storage portion. Therefore, the SiO2 attached to the liquid receiving portion discharge pipe and the storage portion can be dissolved and removed from the liquid receiving portion discharge pipe and the storage portion.

[0151] The substrate processing apparatus according to the embodiment may further include a control portion that controls the first liquid flow rate adjusting portion and the second liquid flow rate adjusting portion. In this case, the control portion can adjust the concentration of the cleaning liquid by controlling the first liquid flow rate adjusting portion and the second liquid flow rate adjusting portion. Thereby, a more effective cleaning process can be achieved.

[0152] The liquid receiving portion may include a first liquid receiving portion (as an example, the first liquid receiving portion 201) disposed below the processing tank, and a second liquid receiving portion (as an example, the second liquid receiving portion 202) that houses the processing tank and the first liquid receiving portion. In addition, the liquid receiving portion discharge pipe may include: a first discharge pipe (as an example, the first discharge pipe 211) connected to the first liquid receiving portion, which discharges the processing liquid from the first liquid receiving portion; and a second discharge pipe (as an example, the second discharge pipe 212) connected to the second liquid receiving portion, which discharges the processing liquid from the second liquid receiving portion. Further, the first liquid receiving portion may have a bottom surface (as an example, the bottom surface 201a) inclined toward the first discharge pipe.

[0153] Thereby, the processing liquid received by the first liquid receiving portion can be effectively discharged from the first liquid receiving portion. Moreover, the retention of the processing liquid in the first liquid receiving portion can be suppressed.

[0154] The release pipe may include a release portion (as an example, the release portion 251) having a plurality of release ports (as an example, the release ports 251a) arranged along the width direction of the bottom surface. By arranging a plurality of release ports along the width direction of the bottom surface, the cleaning liquid and the like can be sufficiently spread over the first liquid receiving portion.

[0155] The release pipe may include a release portion (as an example, the release portion 252) having a plurality of release ports (as an example, the release ports 252a) arranged along the inclined direction of the bottom surface. By arranging a plurality of release ports along the inclined direction of the bottom surface as an inclined surface, the first liquid receiving portion can be cleaned more effectively.

[0156] In addition, the apparatus cleaning method of the embodiment is an apparatus cleaning method for cleaning the substrate processing apparatus (as an example, the etching processing apparatus 60) of the embodiment, and includes a supply step and an adjustment step. In the supply step, a cleaning liquid (as an example, an etching liquid), a first liquid (as an example, DIW), or a second liquid (as an example, HF) is supplied from the release pipe (as an example, the first release pipe 250a and the second release pipe 250b) to the liquid receiving portion (as an example, the first liquid receiving portion 201 and the second liquid receiving portion 202). In the adjustment step, the flow rates of the first liquid and the second liquid are adjusted by the first liquid flow rate adjustment unit (as an example, the DIW flow rate regulator 245) and the second liquid flow rate adjustment unit (as an example, the HF flow rate regulator 246). Therefore, according to the apparatus cleaning method of the embodiment, in the substrate processing apparatus performing batch processing, clogging of the drain pipe can be suppressed.

[0157] The first liquid may be pure water, and the second liquid may be hydrogen fluoride. In this case, in the step of supplying, after supplying the cleaning liquid adjusted to the first concentration through the adjusting step to the liquid receiving portion, the cleaning liquid adjusted to the second concentration lower than the first concentration through the adjusting step may be supplied to the liquid receiving portion. Thereby, the consumption amount of the second liquid can be suppressed, and the liquid receiving portion, the liquid receiving portion discharge pipe, and the storage portion can be effectively cleaned.

[0158] In the step of supplying, the cleaning liquid may be intermittently supplied to the liquid receiving portion. Thereby, compared with the case of continuously discharging the cleaning liquid, the flow of the cleaning liquid can be made chaotic. Therefore, the physical force for peeling the precipitate from the liquid receiving portion can be increased.

[0159] In the step of supplying, the process of supplying the first liquid supplied from the first liquid supply pipe to the liquid receiving portion and the process of supplying the second liquid supplied from the second liquid supply pipe to the liquid receiving portion may be repeated. In this case, by mixing the first liquid and the second liquid in the liquid receiving portion, a cleaning liquid can be generated in the liquid receiving portion.

[0160] It should be considered that the embodiments disclosed in the present invention are illustrative in all respects and not restrictive. In fact, the above embodiments can be implemented in various embodiments. In addition, the above embodiments can be omitted, replaced, and changed in various ways without departing from the claims and their gist.

Claims

1. A substrate processing apparatus, characterized in that, Comprising: A processing tank for storing a processing liquid capable of accommodating a plurality of substrates; A liquid receiving portion for receiving the processing liquid spilled from the processing tank; A liquid receiving portion discharge pipe for discharging the processing liquid from the liquid receiving portion; A storage portion connected to the liquid receiving portion via the liquid receiving portion discharge pipe and storing the processing liquid discharged from the liquid receiving portion; A first liquid supply pipe for supplying a first liquid of a cleaning liquid, wherein the cleaning liquid contains the first liquid and a second liquid and is used to remove precipitates from the processing liquid; A second liquid supply pipe for supplying the second liquid; A release pipe connected to the first liquid supply pipe and the second liquid supply pipe for releasing the cleaning liquid, the first liquid or the second liquid to the liquid receiving portion; A first liquid flow rate adjusting portion provided in the first liquid supply pipe for adjusting the flow rate of the first liquid flowing in the first liquid supply pipe; And A second liquid flow rate adjusting portion provided in the second liquid supply pipe for adjusting the flow rate of the second liquid flowing in the second liquid supply pipe.

2. The substrate processing apparatus according to claim 1, wherein: The first liquid is pure water and the second liquid is hydrogen fluoride, The processing liquid contains phosphoric acid and a dissolved silicon-containing compound.

3. The substrate processing apparatus according to claim 1 or 2, wherein: It further includes a control portion for controlling the first liquid flow rate adjusting portion and the second liquid flow rate adjusting portion, The control portion adjusts the concentration of the cleaning liquid by controlling the first liquid flow rate adjusting portion and the second liquid flow rate adjusting portion.

4. The substrate processing apparatus according to claim 1 or 2, wherein: The liquid receiving portion includes: A first liquid receiving portion disposed below the processing tank; and A second liquid receiving portion for accommodating the processing tank and the first liquid receiving portion, The liquid receiving portion discharge pipe includes: A first discharge pipe connected to the first liquid receiving portion for discharging the processing liquid from the first liquid receiving portion; and A second discharge pipe connected to the second liquid receiving portion for discharging the processing liquid from the second liquid receiving portion, The first liquid receiving portion has a bottom surface inclined downward toward the first discharge pipe.

5. The substrate processing apparatus according to claim 4, wherein: The release pipe includes a release portion having a plurality of release ports arranged along the width direction of the bottom surface.

6. The substrate processing apparatus according to claim 4, wherein: The release pipe includes a release portion having a plurality of release ports arranged along the inclined direction of the bottom surface.

7. A method for cleaning a substrate processing apparatus as described in claim 1, characterized in that, Comprising: A supply step of supplying the cleaning liquid, the first liquid or the second liquid from the release pipe to the liquid receiving portion; And An adjustment step of adjusting the flow rates of the first liquid and the second liquid using the first liquid flow rate adjusting portion and the second liquid flow rate adjusting portion.

8. The apparatus cleaning method according to claim 7, wherein: The first liquid is pure water, The second liquid is hydrogen fluoride, In the supply step, after supplying the cleaning liquid adjusted to a first concentration through the adjustment step to the liquid receiving portion, the cleaning liquid adjusted to a second concentration lower than the first concentration through the adjustment step is supplied to the liquid receiving portion.

9. The device cleaning method according to claim 7 or 8, characterized in that: In the supply step, the cleaning liquid is intermittently supplied to the liquid receiving portion.

10. The device cleaning method according to claim 7, characterized in that: In the supply step, the process of supplying the first liquid supplied from the first liquid supply pipe to the liquid receiving portion and the process of supplying the second liquid supplied from the second liquid supply pipe to the liquid receiving portion are repeatedly performed.

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