Semiconductor process system and method for processing semiconductor wafer

Abstract

A semiconductor process system and a method for processing a semiconductor wafer, wherein the semiconductor process system processes a semiconductor wafer in a process chamber. The process chamber includes a semiconductor processing device for performing a semiconductor process in the chamber. The process chamber includes a heat pipe integrated with one or more components of the process chamber. The heat pipe effectively transfers heat from the chamber to the outside of the chamber.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor process system and a method for processing a semiconductor wafer. Background Art

[0002] Semiconductor wafers are processed in semiconductor processing equipment. Semiconductor wafers undergo a large number of processes, including thin film deposition, photoresist patterning, etching processes, dopant implantation processes, annealing processes, and other types of processes. Many of these processes are performed in semiconductor processing chambers. In order to achieve uniform results in various semiconductor processes, it is beneficial to maintain the temperature in the semiconductor processing chamber within a selected range.

[0003] However, the temperature within a semiconductor processing chamber can be difficult to control. Semiconductor processes often utilize heaters to raise the temperature within a semiconductor processing chamber. However, it can be difficult to dissipate enough heat from the semiconductor processing chamber to ensure that the temperature of the semiconductor processing chamber does not rise above a selected level or outside a selected range. If the temperature cannot be well controlled within a semiconductor processing environment, it is possible that semiconductor wafers will have poor uniformity, less than expected performance characteristics, or may need to be scrapped entirely. Summary of the invention

[0004] One aspect of an embodiment of the present disclosure provides a semiconductor processing system, comprising: a heater, a wall defining an interior volume, a wafer support positioned in the interior volume and configured to hold one or more semiconductor wafers, and a deposition shield positioned in the interior volume. The deposition shield comprises a first surface, a second surface, and a heat pipe vapor chamber positioned between the first surface and the second surface.

[0005] Another aspect of an embodiment of the present disclosure is a semiconductor processing system, comprising: a semiconductor processing chamber, a wafer support, a heater, and a heat pipe. The semiconductor processing chamber defines an internal volume. The wafer support is positioned within the semiconductor processing chamber and is configured to hold a semiconductor wafer during semiconductor processing. The heater is positioned to heat the internal volume. The heat pipe is positioned to receive heat from the internal volume.

[0006] Another embodiment of the present disclosure is a method for processing a semiconductor wafer, comprising: supporting the semiconductor wafer in a semiconductor process chamber; outputting heat into the semiconductor process chamber through a heater; performing a semiconductor process on the semiconductor wafer positioned in the semiconductor process chamber; and transferring heat from the semiconductor process chamber through a heat pipe. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

[0008] Figure 1 is a block diagram of a semiconductor process system according to some embodiments;

[0009] Figure 2A is a side cross-sectional view of a semiconductor processing system including a deposition shield formed as a heat pipe according to some embodiments;

[0010] Figure 2B According to one embodiment Figure 2A A top view of a deposition shield;

[0011] Figure 2C According to one embodiment Figure 2A A side view of a deposition shield;

[0012] Figure 2D is a schematic diagram of a heater pad according to one embodiment;

[0013] Figure 3A and Figure 3B is a schematic diagram of a vapor chamber heat pipe according to some embodiments;

[0014] Figure 4A and Figure 4B is a schematic diagram of a heat pipe according to some embodiments;

[0015] Figure 5 is a flow chart of a method for processing a semiconductor wafer according to some embodiments.

[0016]

Explanation of symbols

[0017] 100:Semiconductor Processing System

[0018] 102: Semiconductor Processing Chamber

[0019] 103: Internal volume

[0020] 104: Processing Equipment

[0021] 106: Wafer

[0022] 108: Heater

[0023] 109a: Wire

[0024] 109b: Wire

[0025] 110: Temperature sensor

[0026] 111a: Heater gasket

[0027] 111b: Heater gasket

[0028] 112: Heat pipe

[0029] 114: Control System

[0030] 116: wall

[0031] 120:Deposition Shield

[0032] 121: Slot

[0033] 124: Cover

[0034] 126: Wafer support

[0035] 127: Bottom electrode

[0036] 128: Top electrode

[0037] 130: Gas source

[0038] 134: Ventilation hole

[0039] 140: first surface

[0040] 142: Second surface

[0041] 143: Exhaust grille

[0042] 144: Inner surface

[0043] 145: Stepped surface

[0044] 146: Outer surface

[0045] 147: Top surface

[0046] 149: Opening

[0047] 151: Heating element

[0048] 152: Capillary material

[0049] 154: column

[0050] 156: Steam channel

[0051] 160: Hot

[0052] 162: Hot

[0053] 166: Arrow

[0054] 168: Arrow

[0055] 170: Hot Surface

[0056] 171: First End

[0057] 172: Cooling surface

[0058] 173: The Second End

[0059] 500:Method

[0060] 502: Steps

[0061] 504: Steps

[0062] 506: Steps

[0063] 508: Steps

[0064] D1: Diameter

[0065] D2: Diameter

[0066] W1: Width

[0067] W2: Width

[0068] W3: Width

[0069] W4: Width

[0070] H1: Height

[0071] H2: Height

[0072] H3: Height

[0073] T1: Thickness

[0074] T2: Thickness

[0075] T3:Thickness

[0076] L: Length DETAILED DESCRIPTION

[0077] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. The following describes specific embodiments of components and arrangements to simplify the present disclosure. Of course, these are only embodiments and are not intended to be restrictive. For example, in the following description, a first feature is formed on or on a second feature and may include an embodiment in which the first feature and the second feature are formed as direct contact, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may repeat element symbols and / or letters in various embodiments. This repetition is for simplification and clarity purposes, and does not itself represent the relationship between the various embodiments and / or configurations discussed.

[0078] Additionally, for simplicity of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used herein to describe the relationship of one element or feature to another (additional) element or feature as depicted in the figures. Such spatially relative terms are intended to encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0079] Figure 1 1 is a block diagram of a semiconductor processing system 100 according to one embodiment. The semiconductor processing system 100 includes a semiconductor processing chamber 102 and a control system 114. The semiconductor processing chamber 102 has an interior volume 103. A processing device 104 is at least partially positioned within the semiconductor processing chamber 102. A wafer 106 and a temperature sensor 110 are positioned within the interior volume 103. A heater 108 is positioned outside the semiconductor processing chamber 102. The processing device 104 includes a heat pipe 112. The semiconductor processing chamber 102 includes a wall 116 that at least partially defines the interior volume 103.

[0080] In one embodiment, the semiconductor processing chamber 102 is configured to perform one or more semiconductor processes on the wafer 106. The wafer 106 is a semiconductor wafer. Typically, semiconductor wafers undergo a large number of processes during manufacturing. These processes may include thin film deposition, photoresist patterning, etching processes, dopant implantation processes, annealing processes, and other types of processes. After all processing steps are completed, the wafer 106 will be cut into a plurality of individual integrated circuits.

[0081] In one embodiment, the semiconductor process chamber 102 is a thin film deposition chamber. The thin film deposition chamber may include a chemical vapor deposition chamber, a sputtering chamber, a physical vapor deposition chamber, an atomic layer deposition chamber, a plasma enhanced vapor deposition chamber, an epitaxial growth chamber, or other types of thin film deposition chambers. Those skilled in the art will recognize that according to some embodiments of the present disclosure, the semiconductor process chamber 102 may include a thin film deposition chamber different from the above without departing from the scope of the present disclosure.

[0082] In one embodiment, the semiconductor processing chamber 102 is an etching chamber. The etching chamber is configured to etch a thin film deposited on the wafer 106. The etching chamber may include a chamber for wet etching, dry etching, plasma etching, or other types of etching processes. Without departing from the scope of the present disclosure, etching chambers other than those described above may be utilized.

[0083] In one embodiment, the semiconductor processing chamber 102 is a dopant implantation chamber. The dopant implantation chamber may include an ion implantation chamber that bombards the wafer 106 with dopant ions. The dopant ions are implanted in the wafer 106 according to selected parameters for the ion implantation process. The dopant implantation chamber may include dopant implants of different types than those described above without departing from the scope of the present disclosure.

[0084] The semiconductor processing chamber 102 includes processing equipment 104. The processing equipment 104 assists in performing semiconductor processes. The processing equipment 104 may include equipment that assists in thin film deposition processes, etching processes, ion implantation processes, annealing processes, photolithography processes, and other types of processes. Some of the processing equipment 104 may be positioned entirely within the semiconductor processing chamber 102. Some of the processing equipment 104 may be positioned partially within the semiconductor processing chamber 102 and partially outside the semiconductor processing chamber 102. Some of the processing equipment 104 may be positioned entirely outside the semiconductor processing chamber 102.

[0085] The processing device 104 may include electrical components for generating electric fields, voltages, magnetic fields, electronic signals, or other types of electrical effects. Thus, the processing device 104 may include electrodes, wires, radio frequency power supplies, transmitters, receivers, or other types of electrical devices that may be utilized in semiconductor processes.

[0086] The processing equipment 104 may include equipment for managing gases or fluids within the semiconductor processing chamber 102. The processing equipment may include components for introducing gases or fluids into the semiconductor processing chamber 102, for removing gases or fluids from the semiconductor processing chamber, and for monitoring and controlling the flow, presence, or composition of gases within the semiconductor processing chamber 102.

[0087] The processing equipment 104 may include a protective device for shielding a portion of the interior volume 103 during semiconductor processing. For example, the processing equipment 104 may include a deposition shield or multiple types of protective devices.

[0088] In some semiconductor processes, it is necessary to maintain the temperature within the semiconductor process chamber 102 within a selected range. In some cases, a heater 108 may be used to heat the semiconductor process chamber 102 or the wafer 106 to a selected temperature. However, in some cases, the semiconductor process may generate excessive heat, resulting in a temperature higher than the selected range. In these cases, it may be difficult to maintain the selected temperature range using conventional techniques.

[0089] In some embodiments, to assist in controlling the temperature within the semiconductor process chamber 102, the processing equipment 104 includes a heat pipe 112. The heat pipe 112 facilitates the conduction of heat from the interior volume of the semiconductor process chamber 102 to the exterior of the semiconductor process chamber 102. Thus, the heat pipe 112 enhances the ability to transfer heat from within the semiconductor process chamber 102 to the exterior of the semiconductor process chamber 102. This in turn enables tighter control of the temperature within the semiconductor process chamber 102. The temperature sensor 110 senses the temperature within the semiconductor process chamber 102 and transmits a temperature signal to the control system 114. The control system 114 controls the operation of the heater 108 in response to the temperature signal from the temperature sensor 110. In particular, the heater 108 can be operated with a reduced risk that the heater 108 will generate more heat than is dissipated from within the semiconductor process chamber 102. Therefore, if the temperature within the semiconductor processing chamber 102 exceeds the selected temperature range or temperature threshold, the output of the heater 108 may be reduced, and the heat pipe 112 may quickly transfer heat from the semiconductor processing chamber 102 so that the temperature quickly returns to the selected temperature range. In this way, the temperature within the semiconductor processing chamber 102 can be maintained within the selected temperature range during semiconductor processing.

[0090] Semiconductor processing equipment within a semiconductor processing chamber often includes various metal components. The metal components are selected to be strong enough to withstand the conditions within the semiconductor processing chamber. The metal components can be selected to withstand high temperatures, vacuum conditions, strong electric fields, strong magnetic fields, and particle bombardment.

[0091] In one embodiment, one or more heat pipes 112 are coupled to one or more of the metal components within the semiconductor processing chamber 102. The heat pipes 112 are in physical contact with one or more of the metal components within the semiconductor processing chamber 102. The heat pipes 112 receive heat from the one or more metal components and transfer heat from the one or more metal components.

[0092] In one embodiment, one or more heat pipes 112 extend between the one or more metal components and the exterior of the semiconductor process chamber 102. Through a process that will be explained in more detail below, the heat pipes 112 transfer heat from the one or more metal components within the semiconductor process chamber 102 to the exterior of the semiconductor process chamber 102. The one or more heat pipes 112 may be connected to a heat sink or another type of physical object outside the semiconductor process chamber 102. The one or more heat pipes transfer heat from the one or more metal components within the semiconductor process chamber 102 to the one or more physical objects outside the semiconductor process chamber 102.

[0093] In one embodiment, one or more heat pipes 112 transfer heat from one or more metal components within the semiconductor process chamber 102 to another area within the semiconductor process chamber 102. In other words, the heat pipe 112 can transfer heat from one area of ​​the semiconductor process chamber 102 to another area of ​​the semiconductor process chamber 102. In these cases, there may be specific areas or components of the semiconductor process chamber 102 from which heat needs to be transferred. The heat receiving area may be an area that absorbs more heat or is connected to other cooling systems that can transfer heat to the outside of the semiconductor process chamber 102.

[0094] In one embodiment, one or more conventional metal components of the semiconductor process chamber 102 include a heat pipe 112. Thus, a portion of a conventional metal component of the semiconductor process chamber 102 may be replaced with a heat pipe 112. Additionally, or alternatively, an entire metal component may be replaced with a heat pipe 112. The heat pipe 112 may have a shape and structure that performs the function of the conventional metal component that the heat pipe 112 replaces. The heat pipe 112 is also sufficiently strong to withstand the high temperatures, vacuum conditions, strong electric fields, strong magnetic fields, ion bombardment, and other conditions that may exist within the semiconductor process chamber 102. The heat pipe 112 may provide the additional benefit of facilitating heat transfer from the interior of the semiconductor process chamber 102 to the exterior of the semiconductor process chamber 102.

[0095] In one embodiment, the heat pipe 112 is part of a wall 116 of the semiconductor processing chamber 102. The wall 116 may at least partially define the interior volume 103 of the semiconductor processing chamber 102. The wall 116 may include one or more heat pipes 112. The one or more heat pipes 112 conduct heat from the interior of the semiconductor processing chamber 102 to the exterior of the semiconductor processing chamber 102.

[0096] In one embodiment, wall 116 is a heat pipe 112, or a group of heat pipes 112. The inner surface of wall 116 corresponds to the heat receiving area of ​​one or more heat pipes. The outer surface of wall 116 corresponds to the heat dissipation area of ​​one or more heat pipes 112. Therefore, heat pipe 112 transfers heat received at the inner surface of wall 116 to the outer surface of wall 116. In this way, heat pipe 112 dissipates heat from the interior of semiconductor processing chamber 102 to the outside of semiconductor processing chamber 102.

[0097] In one embodiment, the heat pipe 112 is a heat transfer element that combines the principles of heat conduction and phase change to effectively transfer heat between two interfaces. The heat pipe 112 includes an internal volume for accommodating a working fluid. The heat pipe 112 operates by transferring heat to the working fluid at a heat receiving area and dissipating heat from the working fluid at a heat dissipation area. The working fluid transfers heat from the heat receiving area to the heat dissipation area. Therefore, the heat pipe 112 includes a hot interface and a cooling interface. The hot interface corresponds to the heat receiving area or the area to be cooled. The cooling interface corresponds to the heat dissipation area or the area to which heat is transferred from the hot interface via the working fluid.

[0098] In one embodiment, the heat pipe 112 operates by transferring heat to the working fluid, so that the working fluid is converted from a liquid to a gas or vapor at the thermal interface. The heat pipe 112 operates by further transferring heat from the working fluid at the cooling interface, so that the working fluid is converted from a gas or vapor to a liquid. More specifically, when the working fluid circulates through the internal channel, the working fluid enters the heat receiving area or approaches the thermal interface in a liquid state. The heat is then transferred to the working fluid in the heat receiving area or the thermal interface, and the working fluid boils or vaporizes. The gaseous working fluid then flows through the channel toward the heat dissipation area or the cooling interface. In the heat dissipation area or the cooling interface, the gaseous working fluid dissipates heat until the working fluid condenses into a liquid form. The liquid working fluid is then absorbed by the capillary material in the heat pipe through capillary action. The liquid working fluid flows through the capillary material facing away from the thermal interface or the heat receiving area. The liquid working fluid then passes through the channel toward the receiving area and continues to circulate again. In this way, the heat pipe 112 transfers heat from the receiving area to the heat dissipation area. This operation of the heat pipe 112 can effectively transfer heat from the interior volume of the semiconductor processing chamber 102 to the exterior of the semiconductor processing chamber 102. Additionally or alternatively, the heat pipe can effectively transfer heat from one area inside the semiconductor processing chamber 102 to another area inside the semiconductor processing chamber 102.

[0099] Figure 2A FIG. 1 is a diagram of a semiconductor processing system 100 according to one embodiment. The semiconductor processing system 100 includes a semiconductor processing chamber 102. The semiconductor processing chamber 102 includes an interior volume 103. The semiconductor processing chamber 102 further includes a wafer support 126 configured to hold a wafer 106.

[0100] exist Figure 2AIn an embodiment of the present invention, the semiconductor processing system 100 is a plasma enhanced chemical vapor deposition (PECVD) system. The PECVD system may be used to deposit a dielectric layer on the wafer 106. The dielectric layer may include silicon oxide, silicon nitride, or other types of dielectric layers. The semiconductor processing system 100 may be used to deposit other types of layers or perform other types of semiconductor processes other than those described above without departing from the scope of the present disclosure.

[0101] In one embodiment, the semiconductor processing system 100 includes a bottom electrode 127, a top electrode 128, and a gas source 130. Figure 2A In the embodiment of the present invention, the top electrode 128 is a showerhead type electrode including a plurality of vents 134 to allow gas to flow from the gas source 130 into the interior volume 103. The bottom electrode 127 and the top electrode 128 are coupled to an RF power source. The RF power source may be coupled to the control system 114 or may be part of the control system 114.

[0102] During the PECVD process, deposition gas is delivered from the gas source 130 through the vent 134 of the top electrode 128 into the interior volume 103. The RF power source generates plasma from the deposition gas within the interior volume 103 by applying a voltage between the bottom electrode 127 and the top electrode 128. The plasma enhances the deposition of thin films on the wafer 106. In one embodiment, the semiconductor processing chamber 102 is a deposition shield 120. The deposition shield 120 is placed within the interior volume 103, surrounding the wafer support 126 and the wafer 106. The deposition shield 120 rests against the chamber wall 116. When the lid 124 is raised or removed, the deposition shield 120 can be lowered into the interior volume 103. As described in further detail below, the deposition shield 120 can be lowered into the interior volume 103 according to the embodiment of the present invention. Figure 2B and Figure 2C Further understanding the shape of the deposition shield 120. The deposition shield 120 may include an exhaust grille 143. The exhaust grille 143 may include apertures or holes that allow exhaust gases from the deposition process to pass from the interior volume 103 of the deposition chamber. The exhaust grille 143 may be an integral part of the deposition shield 120, or may be a separate part connected to the deposition shield 120.

[0103] In one embodiment, the deposition shield 120 prevents material from accumulating on the wall 116 of the semiconductor processing chamber 102. For example, during an etching or deposition process, etching material or material supplied into the interior volume 103 may accumulate on the inner surface of the wall 116. To prevent the accumulation, the semiconductor processing chamber 102 includes the deposition shield 120. The deposition shield 120 may be easily removed and replaced, or removed and cleaned, after each semiconductor process.

[0104] In some cases, it is desirable to maintain the temperature of the wafer 106 within a selected temperature range during the deposition process. The heater 108 may be operated to provide heat to the interior volume 103. In particular, the heater pads 111a, 111b may be coupled to the deposition shield 120. The heater pads 111a, 111b may include resistive elements. Current may be delivered to the heater pads 111a, 111b via the wires 109a, 109b. When current passes through the resistive elements of the heater pads 111a, 111b, the resistive elements generate heat, which is delivered to the interior volume 103 via the deposition shield 120. Therefore, the heater pads 111a, 111b may be considered part of the heater 108. Many other types of heaters may be utilized without departing from the scope of the present disclosure.

[0105] In an embodiment of a low temperature PECVD process for depositing a silicon oxide layer on wafer 106, it may be desirable to maintain the temperature of interior volume 103 between 50° C. and 70° C. Therefore, control system 114 may intermittently or continuously operate heater 108 to heat wafer 106. However, in some cases, the PECVD process may result in excessive heat generation, heating the interior volume to a temperature that exceeds the desired temperature range, resulting in erroneous deposition of the silicon oxide layer.

[0106] To facilitate rapid dissipation of heat from the interior volume 103, the deposition shield 120 includes a heat pipe structure. The heat pipe structure transfers heat from the interior volume surrounded by the deposition shield 120 to the exterior of the deposition shield 120. Thus, the deposition shield 120 is a heat pipe 112. The deposition shield 120 includes a first surface 140 and a second surface 142. The first surface 140 may be considered an inner surface. The second surface 142 may be considered an outer surface.

[0107] In one embodiment, the deposition shield is a flat plate heat pipe. The flat plate heat pipe includes a vapor chamber between the first surface 140 and the second surface 142. Figure 3A and Figure 3B In more detail, the vapor chamber transfers heat from the first surface 140 to the second surface 142 .

[0108] The deposition shield 120 may include a top surface 147 and a stepped surface 145. The deposition shield 120 has a shape that enables the deposition shield 120 to be lowered into the process chamber 102 and stably supported by the chamber wall 116. The deposition shield 120 may be removed from the semiconductor process chamber 102 and cleaned between deposition processes or after certain specific deposition processes. The deposition shield 120 may have shapes and components different from those described above without departing from the scope of the present disclosure.

[0109] The cover 124 rests on the top surface 147 of the deposition shield 120. Figure 2A In FIG. 1 , the cover 124 is shown as a single component. However, in practice, the cover 124 may include various components coupled together, coupled to the deposition shield 120, and coupled to the top electrode 128.

[0110] In one embodiment, the wall 116 includes an inner surface 144 and an outer surface 146. The wall 116 may be cylindrical. The cylindrical chamber wall may surround the deposition shield 120 and may partially define the interior volume 103.

[0111] In one embodiment, the wall 116 includes a heat pipe structure. The heat pipe structure transfers heat from the interior volume 103 surrounded by the wall 116 to the exterior of the wall 116. Therefore, the wall 116 can be a heat pipe 112. The heat pipe 112 can include a vapor chamber between the inner surface 144 and the outer surface 146. The vapor chamber transfers heat from the inner wall 144 to the outer surface 146.

[0112] Although not in Figure 2A 1 , the semiconductor processing chamber 102 may include other types of heat pipes 112 than those described above. As will be described in more detail below, the other types of heat pipes 112 may include heat pipes other than flat plate vapor chamber pipes.

[0113] Figure 2B According to one embodiment Figure 2A FIG. 1 is a top view of the deposition shield 120 . Figure 2B The top view of FIG. 1 depicts a generally annular deposition shield 120. An exhaust grill 143 at the bottom of the deposition shield 120 defines an opening 149. The opening 149 surrounds the wafer support 126 when the deposition shield 120 is lowered into the deposition chamber.

[0114] The deposition shield 120 has an outer diameter (diameter D1). The outer diameter (diameter D1) corresponds to the diameter of the top surface 147 of the deposition shield 120. The diameter D1 may have a range between 340 mm and 400 mm. Without departing from the scope of the present disclosure, the diameter D1 of the deposition shield 120 may have other values. In some embodiments, the deposition shield 120 has an inner diameter less than 400 mm or less than 340 mm at the top surface 147. Without departing from the scope of the present disclosure, the inner diameter of the deposition shield 120 at the top surface 147 may have other values. The outer diameter of the deposition shield 120 at the stepped surface is smaller than the outer diameter D1 (diameter D1) and larger than the inner diameter of the deposition shield 120 at the top surface 147. The deposition shield 120 has an inner diameter at the stepped surface (i.e., the inner surface (first surface 140) that is smaller than the inner diameter of the deposition shield 120 at the top surface 147 and smaller than the outer diameter of the deposition shield 120 at the second surface 142. In some embodiments, the inner diameter of the deposition shield 120 at the inner surface (first surface 140) is less than 330 mm or less than 310 mm. The inner diameter of the deposition shield 120 at the inner surface (first surface 140) may have other values ​​without departing from the scope of the present disclosure.

[0115] The opening 149 has a diameter D2. The diameter D2 is defined by the inner edge of the exhaust grille 143. The diameter D2 may have a range between 310 mm and 330 mm. The diameter D2 may have other values ​​without departing from the scope of the present disclosure. The exhaust grille 143 may have a width W1. The width W1 may have a value between 20 mm and 50 mm. The width W1 may have other values ​​without departing from the scope of the present disclosure.

[0116] Figure 2C According to one embodiment Figure 2A 1 is a side view of the deposition shield 120. Figure 2C 1 shows a side view of the deposition shield 120 showing the slots 121 in the deposition shield 120. When the deposition shield 120 is positioned in the deposition chamber, the wafer 106 can be placed on the wafer support 126 by passing the wafer 106 through the slots 121. The wall 116 of the deposition chamber can also include an opening or port through which the wafer can pass from outside the deposition chamber through the slots 121. The deposition shield 120 can have other shapes and configurations without departing from the scope of the present disclosure.

[0117] The deposition shield 120 has an overall height H1. The height H1 corresponds to the distance between the top surface 147 and the bottom of the exhaust grid 143. In some embodiments, the height H1 may have a value between 200 mm and 300 mm. The height H1 may have other values ​​without departing from the scope of the present disclosure.

[0118] Figure 2DFIG. 1 is a schematic diagram of a heater pad 111 a and a heater pad 111 b according to an embodiment. Figure 2D In FIG. 1 , the heater pads 111a and 111b are not shown coupled to the deposition shield 120. When used, as shown in FIG. Figure 2A As shown, the heater pad 111a and the heater pad 111b are coupled to opposite sides of the outer surface (the second surface 142) of the deposition shield 120. In other embodiments, more than two heater pads are coupled to the deposition shield 120.

[0119] Each heater pad 111a and heater pad 111b has a height H2 and a width W2. In some embodiments, the height H2 may be between 80 mm and 150 mm, and the width W2 may be between 80 mm and 150 mm. Other values ​​of the height H2 and the width W2 may be used without departing from the scope of the present disclosure.

[0120] Each heater pad 111a, 111b has a heating element 151. In one embodiment, the heating element 151 is a resistive coil. When current passes through the resistive coil, the resistive coil generates heat. The resistive coil is coupled to the corresponding wire 109a and 109b. In one embodiment, each heater pad 111a, 111b consumes between 400W and 600W of power when generating heat. The heater pads 111a and 111b may utilize other types of heating elements and other values ​​of power consumption without departing from the scope of the present disclosure. Figure 3A According to one embodiment FIG. 2A to FIG. 2C A cross-sectional view of a portion of the deposition shield 120. Specifically, Figure 3A An enlarged cross-sectional view of the internal structure between the inner surface (first surface 140) and the outer surface (second surface 142) of the deposition shield 120 is shown. Specifically, in one embodiment, the internal structure of the deposition shield 120 between the inner surface (first surface 140) and the outer surface (second surface 142) is a heat pipe structure. According to one embodiment, the deposition shield 120 can be formed as a steam chamber type heat pipe 112. In addition or alternatively, Figure 3A The heat pipe 112 may correspond to other types of processing equipment 104 included in the semiconductor processing chamber 102 .

[0121] In one embodiment, the deposition shield 120 includes a capillary material 152 positioned between the first surface 140 and the second surface 142. Specifically, the capillary material 152 is positioned along the first surface 140. The capillary material is configured to draw liquid via capillary action. As will be described in more detail below, once entering the capillary material 152, the liquid can pass through the capillary material 152. The capillary material 152 can also be positioned along the second surface 142.

[0122] In one embodiment, the posts 154 of the capillary material 152 extend between the first surface 140 and the second surface 142. The posts 154 of the capillary material 152 may also be coupled to support rods or pillars extending between the first surface 140 and the second surface 142. The posts 154 of the capillary material 152 may surround the support rods or pillars. Thus, the support rods or pillars are positioned within the posts 154 of the capillary material 152 and are not visible. Figure 3A The support columns or struts can help prevent the vapor chamber between the first surface 140 and the second surface 142 from collapsing.

[0123] In one embodiment, the steam passage 156 is positioned between the posts 154 of the capillary material 152. As will be described in more detail below, the steam passage 156 supports steam flow between the first surface 140 and the second surface 142. In one embodiment, the steam passage 156 forms a single continuous steam passage surrounding the posts 154 of the capillary material 152.

[0124] In one embodiment, the capillary material 152 is a sintered material. The sintered material may be a sintered metal. The sintered metal may include titanium, aluminum, iron, copper, or other types of metals. The sintered metal includes pores that can absorb liquids via capillary action. The liquid can travel along the sintered metal through the network of pores. The sintered metal can be produced by generating a powder of the metal and pressing the metal powders together at a temperature below the melting point of the metal. The resulting porous metal can absorb liquids via capillary action. Other materials and processes can be used for the sintered material without departing from the scope of the present disclosure.

[0125] In one embodiment, the capillary material 152 is a groove material. For example, the column 154 may include a groove extending along the length of the column in a direction between the second surface 142 and the first surface 140. The groove can absorb liquid by capillary action. The liquid can then travel between the second surface 142 and the first surface 140 along the length of the groove. The groove material may include a metal, such as titanium, aluminum, copper, iron, or other types of metals. The groove material may include other types of metals or materials other than metals without departing from the scope of the present disclosure. The groove material may also be a sintered material.

[0126] In one embodiment, the capillary material 152 comprises a wrapped screen. In this case, the capillary material 152 comprises a screen having a large number of holes. The screen is then wrapped. The screen can absorb liquid via capillary action. Once entering the capillary material 152, the liquid can pass through the network of holes or pores in the column 154 between the second surface 142 and the first surface 140. Without departing from the scope of the present disclosure, the capillary material 152 may include other types of capillary materials that are different from the screen, sintered material, or groove material.

[0127] In one embodiment, the thickness of the heat pipe 112 is between 2 mm and 50 mm. Therefore, the deposition shield 120, configured as a flat steam chamber tube wrapped in a cylinder, can have a thickness similar to that of a conventional deposition shield. In addition, the flat steam chamber heat pipe can be used in other components of the semiconductor processing chamber 102 without departing from the scope of the present disclosure.

[0128] In one embodiment, the heat pipe 112 includes a working fluid in a vapor chamber between the first surface 140 and the second surface 142. During operation of the heat pipe 112, the working fluid repeatedly transitions between a gaseous state and a liquid state while circulating through the vapor chamber between the first surface 140 and the second surface 142. The working fluid may be selected based on the expected temperature range in the environment in which the heat pipe 112 is placed. In one embodiment, to achieve a temperature range between -70°C and 200°C, the working fluid may include water, Freon, NH 3 , CH 3 COCH 3 , CH 3 OH, C 2 H 5 OH and C 7 H 16 In one embodiment, to achieve a temperature range between 200°C and 500°C, the working fluid may include naphthalene, Downtherm, Thermex, sulfur, and mercury. In one embodiment, to achieve a temperature range between 500°C and 1000°C, the working fluid may include cesium, rubidium, potassium, and sodium. Other working fluids than those described above may be utilized for various temperature ranges without departing from the scope of the present disclosure.

[0129] The deposition shield 120 has a thickness T1. The thickness T1 corresponds to the distance between the outer surface (second surface 142) and the inner surface (first surface 140) of the deposition shield 120. The thickness T1 may have a value between 5 mm and 15 mm. Other thicknesses are possible without departing from the scope of the present disclosure.

[0130] The post 154 has a thickness T2. The thickness T2 may have a value between 2 mm and 10 mm, although other values ​​are possible without departing from the scope of the present disclosure.

[0131] The capillary material 152 adjacent to the inner surface (first surface 140) of the deposition shield 120 may have a width W3 at locations between adjacent pillars 154. The width W3 may have a value between 2 mm and 5 mm, although other values ​​may be utilized without departing from the scope of the present disclosure.

[0132] The steam channel 156 has a height H3. The height H3 corresponds to the distance between adjacent posts 154. The height H3 may have a value between 5 mm and 10 mm, although other values ​​for the height H3 may be utilized without departing from the scope of the present disclosure.

[0133] Figure 3B According to one embodiment Figure 3A An annotated diagram of the deposition shield 120 illustrating the operation of the heat pipe. Figure 3B In FIG. 1 , the first surface 140 is a hot surface or a heat receiving side of the heat pipe 112 . The second surface 142 is a cooling surface or a heat dissipating side of the heat pipe 112 .

[0134] In one embodiment, heat 160 received by the heat pipe 112 is depicted as wavy lines incident on the first surface 140 of the heat pipe 112. The heat 160 is absorbed by the heat pipe 112. Heat 162 dissipated by the heat pipe 112 is depicted as wavy lines exiting the second surface 142. Although not shown in FIG. Figure 3B , but the heat pipe 112 may be in physical contact with solid material on one or both of the surfaces (first surface 140, second surface 142).

[0135] In one embodiment, the flow of the working fluid and the heat transfer mechanism within the heat pipe 112 are illustrated by arrows 166 and 168. Arrow 166 pointing to the second surface 142 illustrates the working fluid in a vapor or gaseous state traveling in the vapor channel 156 toward the second surface 142. Arrow 168 pointing to the first surface 140 illustrates the working fluid in a liquid state traveling in the column 154 of the capillary material 152 toward the first surface 140.

[0136] When heat 160 is received at the first surface 140, the working fluid absorbs the heat 160 and changes from a liquid state to a vapor or gas state. According to the physical phase change principle, the transition of a material from a liquid state to a gas state requires a relatively large amount of heat. Therefore, the working fluid absorbs a large amount of heat when changing between a liquid state and a gas state at the receiving area or hot surface corresponding to the first surface 140.

[0137] In one embodiment, after the working fluid has been converted to a gaseous state, the working fluid flows through the vapor channel 156 toward the second surface 142. The flow direction of the gaseous working fluid is the result of the pressure difference in the vapor chamber. The pressure is higher in the receiving area. The pressure is lower in the heat dissipation area. This will be described in more detail below, in part based on the fact that the working fluid becomes a liquid in the heat dissipation area.

[0138] In one embodiment, when the gaseous working fluid approaches the second surface 142 within the steam channel 156, the gaseous working fluid begins to transfer heat to the second surface 142. After the working fluid has transferred a sufficient amount of heat, the working fluid changes from a vapor or gaseous state to a liquid state. The change from a gaseous state to a liquid state requires a large amount of heat dissipation. Therefore, a large amount of thermal energy is transferred when the working fluid changes to a liquid state. Heat 162 is the heat dissipated from the second surface 142.

[0139] In one embodiment, when the working fluid is converted to a liquid state at the second surface 142, the working fluid is absorbed by the capillary material 152 in the column 154. The liquid working fluid is absorbed by the capillary material 152 via capillary action. The liquid working fluid then flows through the capillary material of the column 154 and flows toward the first surface 140. When the liquid working fluid reaches the first surface 140, the liquid working material absorbs heat 160 and converts to a vapor or gas state, and the cycle of absorbing heat and dissipating heat is repeated. In this way, the flat steam chamber heat pipe (heat pipe 112) can transfer heat from one side of the heat pipe 112 to the other side.

[0140] As described above, in one embodiment, the wall 116 may include Figure 3A and Figure 3B 1. In particular, wall 116 may include a flat vapor chamber heat pipe (heat pipe 112) that can transfer a large amount of heat from interior volume 103 of semiconductor processing chamber 102 to the exterior of semiconductor processing chamber 102. Other types of heat pipes other than those described above may be utilized without departing from the scope of the present disclosure. Additionally, other components of the semiconductor processing chamber may include heat pipes without departing from the scope of the present disclosure.

[0141] Figure 4A FIG. 1 is a cross-sectional view of a discrete heat pipe (heat pipe 112 ) according to an embodiment. According to an embodiment, the heat pipe 112 is formed as a single-tube heat pipe 112 . Figure 4A The heat pipe 112 may be included as part of a processing device 104 of a semiconductor processing chamber 102. The heat pipe 112 may be positioned adjacent to the processing device 104 of the semiconductor processing chamber 102 and may transfer heat from the processing device 104 of the semiconductor processing chamber 102. In one embodiment, the heat pipe 112 is positioned to physically support the processing device 104 within the semiconductor processing chamber 102. Those skilled in the art will recognize that the heat pipe 112 may be utilized in many ways and in conjunction with many components within the semiconductor processing chamber 102 in accordance with the present disclosure without departing from the scope of the present disclosure. The heat pipe 112 may be positioned in an environment where the heat pipe receives heat at a heat receiving region or hot surface 170 and the heat pipe 112 dissipates heat at a heat dissipation region or cooling surface 172.

[0142] In one embodiment, the heat pipe 112 may be positioned between the deposition shield 120 and the wall 116. In this embodiment, the heat receiving area or heat surface 170 is the second surface 142 of the deposition shield 120. The heat dissipation area or cooling surface 172 is the inner surface of the wall 116. In this embodiment, the heat pipe 112 may be positioned below the heater pad 111a between the deposition shield 120 and the wall 116. The heat pipe 112 receives heat from the second surface 142 of the deposition shield 120 and dissipates heat to the wall 116. In this way, the heat pipe 112 can promote heat dissipation from the interior of the processing chamber to the exterior of the processing chamber. In one embodiment, a plurality of discrete heat pipes (heat pipes 112) may be placed between the deposition shield 120 and the wall 116. The heat pipe 112 may be placed at other locations to promote heat dissipation from the interior of the processing chamber to the exterior of the processing chamber.

[0143] In one embodiment, the heat pipe 112 separates an internal vapor channel 156 and includes a capillary material 152 positioned along the inner surface of the heat pipe 112. The capillary material 152 is configured to draw liquid via capillary action. As will be described in more detail below, once the liquid enters the capillary material 152, it can pass through the capillary material 152.

[0144] In one embodiment, the capillary material 152 is a sintered material. The sintered material may be a sintered metal. The sintered metal may include titanium, aluminum, iron, copper, or other types of metals. The sintered metal includes pores that can absorb liquids via capillary action. The liquid can travel along the sintered metal through the network of pores. The sintered metal can be produced by generating a powder of the metal and pressing the metal powder together at a temperature below the melting point of the metal. The resulting porous metal can absorb liquids via capillary action. Other materials and processes can be used for the sintered material without departing from the scope of the present disclosure.

[0145] In one embodiment, the capillary material 152 is a groove material. The groove can absorb liquid by capillary action. The liquid can then travel along the length of the groove. The groove material can include a metal, such as titanium, aluminum, copper, iron, or other types of metals. The groove material can include other types of metals or materials other than metals without departing from the scope of the present disclosure. The groove material can also be a sintered material.

[0146] In one embodiment, the capillary material 152 comprises a wrapped screen. In this case, the capillary material comprises a screen having a large number of holes. The screen is then wrapped. The screen can absorb liquid via capillary action. Once the liquid enters the capillary material 152, the liquid can pass through the network of holes or pores. Without departing from the scope of the present disclosure, the capillary material 152 may include other types of capillary materials that are different from the screen, sintered material, or groove material.

[0147] In one embodiment, the heat pipe 112 includes a working fluid in a vapor chamber between the first surface 140 and the second surface 142. During operation of the heat pipe 112, the working fluid repeatedly switches between a gaseous state and a liquid state while passing through an internal cycle between a heat receiving area (hot surface 170) and a heat dissipating area (cooling surface 172). The working fluid may be selected based on the expected temperature range in the environment in which the heat pipe 112 is placed. In one embodiment, to achieve a temperature range between -70°C and 200°C, the working fluid may include water, Freon, NH 3 , CH 3 COCH 3 , CH 3 OH, C 2 H 5 OH and C 7 H 16 In one embodiment, to achieve a temperature range between 200°C and 500°C, the working fluid may include naphthalene, Downtherm, Thermex, sulfur, and mercury. In one embodiment, to achieve a temperature range between 500°C and 1000°C, the working fluid may include cesium, rubidium, potassium, and sodium. Other working fluids than those described above may be utilized for various temperature ranges without departing from the scope of the present disclosure.

[0148] In one embodiment, the heat pipe 112 has a length L. The length L corresponds to the distance between the first end 171 and the second end 173. The first end 171 is positioned at the heat receiving area or hot surface 170. The second end 173 is positioned at the heat dissipation area or cooling surface 172. The length L may be between 10 mm and 30 mm, although other lengths are possible without departing from the scope of the present disclosure. The capillary material may have a thickness T3. The thickness T3 may have a value between 1 mm and 5 mm, although other thicknesses are possible without departing from the scope of the present disclosure. The internal steam channel 156 may have a width W4. The width W4 may have a value between 3 mm and 10 mm, although other values ​​may be utilized without departing from the scope of the present disclosure.

[0149] Figure 4B According to one embodiment Figure 4A FIG. 1 is an annotated diagram of a heat pipe 112 illustrating the operation of the heat pipe. In one embodiment, heat 160 received by the heat pipe 112 is depicted as wavy lines incident on the first surface 140 of the heat pipe 112. The heat 160 is absorbed by the heat pipe 112. Heat 162 dissipated by the heat pipe 112 is depicted as wavy lines exiting the second surface 142.

[0150] In one embodiment, the flow of the working fluid and the heat transfer mechanism in the heat pipe 112 are illustrated by arrows 166 and 168. Arrow 166 pointing to the heat dissipation region (cooling surface 172) illustrates the working fluid in a vapor or gaseous state, traveling toward the heat dissipation region (cooling surface 172) in the vapor channel 156. Arrow 168 pointing to the heat receiving region (heat surface 170) illustrates the working fluid in a liquid state, traveling toward the heat receiving region (heat surface 170) in the capillary material 152.

[0151] When heat 160 is received at the heat receiving area, the working fluid absorbs the heat 160 and changes from a liquid state to a vapor or gas state. According to the physical phase change principle, the transition of a material from a liquid state to a gas state requires a relatively large amount of heat. Therefore, the working fluid absorbs a large amount of heat when it changes between a liquid state and a gas state at the receiving area of ​​the hot surface 170.

[0152] In one embodiment, after the working fluid has been converted to a gaseous state, the working fluid flows through the vapor channel 156 toward the heat dissipation area (cooling surface 172). The flow direction of the gaseous working fluid is a result of the pressure difference within the vapor chamber. The pressure is higher at the heat receiving area (hot surface 170). The pressure is lower at the heat dissipation area (cooling surface 172). This will be described in more detail below, in part based on the fact that the working fluid becomes a liquid in the heat dissipation area.

[0153] In one embodiment, when the gaseous working fluid approaches the heat dissipation region (cooling surface 172) within the steam channel 156, the gaseous working fluid begins to transfer heat to the second surface 172. After the working fluid has transferred a sufficient amount of heat, the working fluid changes from the vapor or gas state to the liquid state. The change from the gas state to the liquid state requires a large amount of heat dissipation. Therefore, a large amount of thermal energy is transferred when the working fluid changes to the liquid state. Heat 162 is the heat dissipated at the heat dissipation region (cooling surface 172).

[0154] In one embodiment, when the working fluid is converted into a liquid state at the heat dissipation area (cooling surface 172), the working fluid is absorbed by the capillary material 152. The liquid working fluid is absorbed by the capillary material 152 via capillary action. The liquid working fluid then flows toward the heat receiving area through the capillary material 152. When the liquid working fluid reaches the heat receiving area, the liquid working material absorbs heat 160 and converts into a vapor or gas state, and repeats the cycle of heat absorption and heat dissipation. In this way, the flat steam chamber heat pipe (heat pipe 112) can transfer heat from one side of the heat pipe 112 to the other side.

[0155] Figure 5 is a flow chart of a method 500 according to one embodiment. At step 502, the method 500 includes supporting a semiconductor wafer in a semiconductor processing chamber. One embodiment of a semiconductor processing chamber is Figure 1The method 500 includes outputting heat into the semiconductor processing chamber 102 via a heater at step 504. One embodiment of the heater is Figure 1 The method 500 includes performing a semiconductor process on a semiconductor wafer positioned in a semiconductor processing chamber. At step 508, the method 500 includes transferring heat from the semiconductor processing chamber via a heat pipe. An embodiment of the heat pipe is Figure 3A The heat pipe 112 is provided.

[0156] In one embodiment, a semiconductor processing chamber includes a heater, a wall defining an interior volume, a wafer support positioned in the interior volume and configured to hold one or more semiconductor wafers, and a deposition shield positioned in the interior volume. The deposition shield includes a first surface, a second surface, and a heat pipe vapor chamber positioned between the first surface and the second surface.

[0157] In one embodiment, the heat pipe vapor chamber includes a capillary material, one or more channels, and a working fluid. In one embodiment, the heat pipe vapor chamber includes one or more pillars extending between a first surface and a second surface. In one embodiment, the capillary material is coupled to the one or more pillars. In one embodiment, the capillary material is a sintered capillary material. In one embodiment, the capillary material is a grooved capillary material. In one embodiment, the capillary material includes one or more screens. In one embodiment, the capillary material is a metal. In one embodiment, a deposition shield surrounds a wafer support, wherein a first surface of the deposition shield is closer to the wafer support than a second surface of the deposition shield.

[0158] In one embodiment, a semiconductor processing system includes a semiconductor processing chamber defining an interior volume, and a wafer support positioned within the semiconductor processing chamber and configured to hold a semiconductor wafer during semiconductor processing. The system includes a heater positioned to heat the interior volume, and a heat pipe positioned to receive heat from the interior volume.

[0159] In one embodiment, the semiconductor process system further includes a temperature sensor and a control system. The temperature sensor is configured to sense the temperature within the internal volume. The control system is coupled to the temperature sensor and the heater, and is configured to control the heater in response to the temperature sensor. In one embodiment, the heat pipe is positioned within the internal volume. In one embodiment, the semiconductor process system further includes a processing device positioned within the internal volume and coupled to the heat pipe. In one embodiment, the semiconductor process chamber includes a wall that at least partially defines the internal volume, wherein the heat pipe is integrated with the wall. In one embodiment, the heat pipe is a flat steam chamber heat pipe. In one embodiment, the semiconductor process chamber includes one or more of a thin film deposition chamber, a thin film etching chamber, and an ion implantation chamber. In one embodiment, the heat pipe includes a sealed internal chamber, a capillary material positioned in the internal chamber, and a working fluid positioned in the internal chamber.

[0160] In one embodiment, a method includes supporting a semiconductor wafer in a semiconductor processing chamber and outputting heat into the semiconductor processing chamber via a heater. The method includes performing a semiconductor process on the semiconductor wafer positioned in the semiconductor processing chamber and transferring heat from within the semiconductor processing chamber via a heat pipe.

[0161] In one embodiment, the heat pipe is integrated with a deposition shield positioned within a semiconductor processing chamber.In one embodiment, the heat pipe includes an interior volume, a capillary material positioned within the interior volume, and a working fluid.

[0162] The principles of some embodiments of the present disclosure provide enhanced temperature control of a semiconductor processing environment. Reliable control of the temperature of the semiconductor processing environment results in semiconductor wafers that meet design specification characteristics. In addition, reliable temperature control results in uniform characteristics of integrated circuits cut from the semiconductor wafer. As a result, the integrated circuits have reliable performance, and fewer wafers and integrated circuits are scrapped due to poor temperature control. As described herein, heat pipes implemented in a semiconductor processing environment can enhance the dissipation of heat from the semiconductor processing environment. The temperature within the semiconductor processing environment is better controlled.

[0163] The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art will appreciate that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for achieving the same purposes and / or achieving the same advantages of the embodiments described herein. Those skilled in the art will also recognize that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and replacements herein without departing from the spirit and scope of the present disclosure.

Claims

1. A semiconductor process system, characterized in that: include: a heater; a wall, defining an interior volume; a wafer support positioned within the interior volume and configured to hold one or more semiconductor wafers; as well as a deposition shield positioned within the interior volume and comprising: a first surface; a second surface; and A heat pipe vapor chamber is positioned between the first surface and the second surface, the heat pipe vapor chamber comprising: a capillary material, wherein a plurality of columns of the capillary material extend between the first surface and the second surface; a continuous vapor passage positioned between and surrounding the columns of capillary material; and A working fluid.

2. The semiconductor process system according to claim 1, wherein: The continuous steam channel is a single continuous steam channel.

3. The semiconductor process system according to claim 1, wherein: The heat pipe vapor chamber includes one or more struts extending between the first surface and the second surface.

4. The semiconductor process system according to claim 3, wherein: The capillary material is coupled to the one or more pillars.

5. The semiconductor process system according to claim 1, wherein: The capillary material is a sintered capillary material.

6. The semiconductor process system according to claim 1, wherein: The capillary material is a groove capillary material.

7. The semiconductor process system according to claim 1, wherein: The capillary material comprises one or more screens.

8. The semiconductor process system according to claim 1, wherein: The capillary material is metal.

9. The semiconductor process system according to claim 1, wherein: The deposition shield surrounds the wafer support, wherein the first surface of the deposition shield is closer to the wafer support than the second surface of the deposition shield.

10. A semiconductor process system, characterized in that: include: a semiconductor processing chamber defining an internal volume; a wafer support positioned within the semiconductor processing chamber and configured to hold a semiconductor wafer during a semiconductor process; a heater positioned to heat the interior volume; as well as a heat pipe positioned to receive heat from the interior volume, the heat pipe comprising: a capillary material, wherein a plurality of columns of the capillary material extend between the first surface and the second surface; a continuous vapor passage positioned between and surrounding the columns of capillary material; and A working fluid.

11. The semiconductor process system according to claim 10, wherein: Further including: a temperature sensor configured to sense a temperature within the interior volume; as well as A control system is coupled to the temperature sensor and the heater and is configured to control the heater in response to the temperature sensor.

12. The semiconductor process system according to claim 10, wherein: The heat pipe is positioned within the interior volume.

13. The semiconductor process system according to claim 10, wherein: Further included is a processing device positioned within the interior volume and coupled to the heat pipe.

14. The semiconductor process system according to claim 10, wherein: The semiconductor processing chamber includes a wall at least partially defining the interior volume, wherein the heat pipe is integrated with the wall.

15. The semiconductor process system according to claim 14, wherein: The heat pipe is a flat steam chamber heat pipe.

16. The semiconductor process system according to claim 10, wherein: The semiconductor processing chamber includes one or more of the following: a thin film deposition chamber; a thin film etching chamber; and An ion implantation chamber.

17. The semiconductor process system according to claim 10, wherein: The height of the continuous steam channel corresponds to the distance between adjacent columns.

18. A method for processing a semiconductor wafer, characterized in that: include: Supporting a semiconductor wafer in a semiconductor processing chamber; Outputting heat into the semiconductor process chamber through a heater; performing a semiconductor process on the semiconductor wafer positioned in the semiconductor process chamber; as well as Heat is transferred from the semiconductor processing chamber by a heat pipe, the heat pipe comprising: a capillary material, wherein a plurality of columns of the capillary material extend between the first surface and the second surface; a continuous vapor passage positioned between and surrounding the columns of capillary material; and A working fluid.

19. The method according to claim 18, characterized in that The heat pipe is integrated with a deposition shield positioned within the semiconductor processing chamber.

20. The method according to claim 18, characterized in that The height of the continuous steam channel corresponds to the distance between adjacent columns.

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