Method for regulating power supply voltage of amplifier and controller of amplifier

Abstract

The present invention discloses a method for adjusting the power supply voltage of an amplifier and a controller of the amplifier, wherein the method for adjusting the power supply voltage of the amplifier comprises: receiving a temperature value; and adjusting the power supply voltage provided to the amplifier according to the temperature value. The implementation of the technical solution of the present invention can improve the temperature adaptability of the amplifier.

Description

Technical Field

[0001] The present invention relates to the field of mobile communication technology, and more particularly, to a method for adjusting a power supply voltage of an amplifier and a controller of the amplifier. Background Art

[0002] Radio frequency (RF) circuits for wireless communication, such as RF power amplifiers for amplifying and outputting RF signals to antennas, are very important and essential to communication systems (e.g., portable phones or handheld user devices, such as mobile phones or smartphones) and telematics systems. However, handheld communication systems and telematics systems follow different standards. For example, the Third Generation Partnership Project (3GPP) for mobile communications requires user devices to meet certain performance requirements in the temperature range of -10°C to 55°C, while the Grade 3 of the Automotive Electronics Council Q100 (AEC-Q100) requires that electronic products (including RF circuits in telematics systems) can operate normally in a wider temperature range of -40°C to 85°C. In other words, the RF circuits that implement 3GPP mobile communications in telematics systems must meet 3GPP performance requirements in the wider temperature range of AEC-Q100 Grade 3. However, migrating from the narrower temperature range of 3GPP to the wider temperature range of AEC-Q100 Grade 3 without degrading performance poses challenges to the development of RF circuits. Summary of the invention

[0003] The present invention therefore provides a method for adjusting the power supply voltage of an amplifier and a controller of the amplifier to solve the above-mentioned problem.

[0004] The present invention provides a method for adjusting the power supply voltage of an amplifier, which may include: receiving a temperature value; and adjusting the power supply voltage provided to the amplifier according to the temperature value.

[0005] A controller of an amplifier provided by the present invention may include: a sensor port for receiving a temperature value; and an internal circuit coupled between the sensor port and a power supply circuit for managing the power supply voltage provided to the amplifier; wherein: when the temperature value is higher than a first temperature threshold or lower than a second temperature threshold, the internal circuit is used to drive the power supply circuit to adjust the power supply voltage.

[0006] Implementing the technical solution of the present invention can improve the temperature adaptability of the amplifier. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 System 100 is shown according to an embodiment of the present invention.

[0008] Figure 2aEight sample curves a1 to a8 show how the ACLR of the amplifier 120 varies with temperature over eight different communication channels f1 to f8 of a frequency band (eg, uplink frequency band) when the power supply voltage Vpa is fixed at 3.0 volts over the entire temperature range of AEC-Q100 Grade 3.

[0009] Figure 2b Eight sample curves b1 to b8 show how the ACLR of the amplifier 120 varies with temperature on eight different communication channels f1 to f8 , respectively, when the power supply voltage Vpa is fixed at 3.4 volts over the entire temperature range of AEC-Q100 Grade 3.

[0010] FIG. 2c shows a case where the power supply voltage Vpa provided to the amplifier 120 is Figure 3 and Figure 4a Eight sample curves c1 to c8 are provided showing how the ACLR of the amplifier 120 changes with temperature on eight different communication channels f1 to f8 when dynamically set.

[0011] Figure 3 Flowchart 300 is shown according to an embodiment of the present invention.

[0012] Figure 4a and Figure 4b Each of 304 illustrates an embodiment of a temperature compensation voltage setting that may be implemented at step 306 . DETAILED DESCRIPTION

[0013] Certain words are used in the specification and claims to refer to specific components. It should be understood by those skilled in the art that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criteria for distinction. "Including" and "including" mentioned throughout the specification and claims are open-ended terms, so they should be interpreted as "including but not limited to". "Substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect. In addition, the term "coupled" includes any direct and indirect electrical connection means. Therefore, if the text describes a first device coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connection means. The following is a preferred way to implement the present invention, the purpose of which is to illustrate the spirit of the present invention rather than to limit the scope of protection of the present invention. The scope of protection of the present invention shall be subject to the definition of the attached claims.

[0014] The following description is the best embodiment of the present invention. These descriptions are used to illustrate the general principles of the present invention and should not be used to limit the present invention. The scope of protection of the present invention should be determined based on the claims of the present invention.

[0015] The present invention can improve the temperature adaptability of RF circuits, for example, it can help RF circuits that initially meet the 3GPP performance requirements only within a narrow temperature range of 3GPP to adapt to the wider temperature range of AEC-Q100 Grade 3, so that the RF circuit can maintain compliance with the 3GPP performance requirements within the wider temperature range of AEC-Q100 Grade 3. For ease of discussion, an RF power amplifier is used as an example of an RF circuit below.

[0016] Figure 1 System 100 is shown according to an embodiment of the present invention. For example, system 100 may be an electronic system that needs to meet 3GPP performance requirements within the temperature range of AEC-Q100 Grade 3. System 100 may be a telematics system for a vehicle, or a communication system such as a portable / handheld user device that complies with 2G, 3G, 4G, or 5G (or higher) specifications specified by 3GPP standards. System 100 may include one or more temperature sensors (e.g., Figure 1 As shown, the one or more temperature sensors may include an ambient temperature sensor 124 and an amplifier temperature sensor 126), a temperature sensing module 102, a controller 110, a power supply circuit 112, an amplifier 120, and an antenna 122. The one or more temperature sensors may sense one or more temperatures respectively; the temperature sensing module 102 may be connected to the one or more temperature sensors, and may obtain a temperature value Ta from the one or more temperatures sensed by the one or more temperature sensors. The ambient temperature sensor 124 may sense an ambient temperature TS1 of the system 100. The amplifier temperature sensor 126 may be disposed near the amplifier 120, and may sense a temperature TS2 of the amplifier 120. The temperature sensing module 102 may be connected to the ambient temperature sensor 124 and the amplifier temperature sensor 126, and may obtain a temperature value Ta from the ambient temperature TS1 and the temperature TS2 of the amplifier 120, for example, the temperature value Ta may be a weighted average of the temperatures TS1 and TS2.

[0017] The controller 110 may include a sensor port 104, a power control port 106, and an internal circuit 108. The sensor port 104 may be coupled to the temperature sensing module 102 to receive a temperature value Ta. The power control port 106 may be coupled to a power supply circuit 112. The internal circuit 108 may be coupled to the sensor port 104 and the power control port 106. The power supply circuit 112 may be coupled between the power control port 106 and the amplifier 120, and may be used to manage a direct current (DC) power supply voltage Vpa provided to the amplifier 120. In one embodiment, the controller 110 may be implemented by a logic circuit (e.g., a processor IC) in an integrated circuit (IC), and the power supply circuit 112 may be located in a different IC, such as a power management IC (PMIC). In one embodiment, the controller 110 and the power supply circuit 112 may be integrated into the same IC. In one embodiment, the temperature sensing module 102 and the controller 110 may be integrated into the same IC. In different embodiments, the temperature sensing module 102 and the controller 110 may be respectively provided in two different ICs.

[0018] The amplifier 120 can be an RF power amplifier (PA), which is coupled to the power supply circuit 112 and powered by the power supply voltage Vpa. The amplifier 120 can receive a wired RF signal s1 (for example, from an RF pre-stage circuit), amplify the power of the RF signal s1 to generate an amplified RF signal s2, and output the amplified RF signal s2 to the antenna 122 for transmission via electromagnetic waves.

[0019] In other words, the amplifier 120 may serve as the last stage of the RF transmitter of the system 100; therefore, the overall RF transmission performance of the system 100, such as the RF transmission power at different frequencies (channels), may be governed by the performance of the amplifier 120. With respect to RF transmission power, 3GPP describes (e.g., in 3GPP TS 25.101, 25.102, 34.121, 34.122, 36.101, 36.521-1, 38.101-1, 45.005, 45.008, 45.010 and / or 51.010-1) performance requirements related to UE maximum output power, Spectrum Emission Mask (SEM) and Adjacent Channel Leakage Power Ratio (ACLR), e.g., in order to achieve high-quality communication, ACLR should be kept as low as possible.

[0020] Figure 2aEight sample curves a1 to a8 are shown showing how the ACLR of the amplifier 120 varies with temperature on eight different communication channels f1 to f8 of a frequency band (e.g., uplink frequency band) when the power supply voltage Vpa is fixed at 3.0 volts over the entire temperature range of AEC-Q100 Grade 3 (i.e., -40°C to 85°C). For example, when the power supply voltage Vpa is fixed at 3.0 volts over the entire temperature range of AEC-Q100 Grade 3, curve a1 shows that on channel f1, the ACLR is lower than -40 dB at low temperature (e.g., -40°C, the lower limit of the AEC-Q100 Grade 3 temperature range) and normal temperature (e.g., 25°C), but rises to a higher value between -40 dB and -35 dB at high temperature (e.g., 85°C, the upper limit of the AEC-Q100 Grade 3 temperature range). As another example, when the power supply voltage Vpa is fixed at 3.0 volts over the entire temperature range of AEC-Q100 Grade 3, curve a2 shows that on channel f2, the ACLR is close to -40 dB at low temperature, almost reaches -45 dB at normal temperature, and rises back to a value between -40 dB and -35 dB at high temperature.

[0021] In order to meet the 3GPP performance requirements within the AEC-Q100 Grade 3 temperature range, the ACLR must remain below an ACLR threshold (e.g., -33 dB) on each of the eight different channels f1 to f8 within the AEC-Q100 Grade 3 temperature range, the lower the better. Figure 2a As shown in curve a8 in FIG. 8 , on channel f8 , when the power supply voltage Vpa is fixed at 3.0 volts, the ACLR will exceed the ACLR threshold at high temperature.

[0022] Since ACLR is related to the linearity of the amplification gain, ACLR can be improved (eg, reduced) by adjusting (eg, increasing) the power supply voltage Vpa. Figure 2b Eight sample curves b1 to b8 show how the ACLR of the amplifier 120 varies with temperature on eight different communication channels f1 to f8, respectively, when the power supply voltage Vpa is fixed at 3.4 volts over the entire temperature range of AEC-Q100 Grade 3. For example, when the power supply voltage Vpa is fixed at 3.4 volts over the entire temperature range of AEC-Q100 Grade 3, curve b8 shows that on channel f8, the ACLR is close to -35 dB at low temperature (e.g., -40°C), is lower than -45 dB at normal temperature (e.g., 25°C), and rises to a higher value between -40 dB and -35 dB at high temperature (e.g., 85°C). Figure 2bAs shown, by fixing the supply voltage Vpa to a higher 3.4 volts over the entire temperature range of AEC-Q100 Grade 3, ACLR can be maintained below the -33dB ACLR threshold on each of channels f1 to f8 over the entire temperature range of AEC-Q100 Grade 3. However, the margin between the -33dB ACLR threshold and the worst-case ACLR (e.g., -35dB at a low temperature of -40°C as shown by curve f8) will be very insufficient. Figure 2a and 2b It should be understood that: over the full temperature range of AEC-Q100 Grade 3, the amplifier 120 ( Figure 1 ) to a higher voltage value can improve the performance at high temperature (e.g., 85°C) (not only for ACLR but also for SEM and maximum output power (although not shown in the figure), but on the other hand may degrade the performance at low temperature (e.g., -40°C).

[0023] In order to overcome the disadvantage of constantly setting the voltage Vpa to a fixed voltage value over the entire temperature range, the present invention provides a temperature compensation voltage setting that can dynamically adjust the amplifier 120 ( Figure 1 ) power supply voltage Vpa. Figure 1 , Figure 3 Flowchart 300 is shown according to an embodiment of the present invention. Internal circuit 108 ( Figure 1 ) may be configured to execute flowchart 300 to implement temperature compensation voltage setting for amplifier 120. Executing flowchart 300 may improve the performance of amplifier 120 over the entire temperature range of AEC-Q100 Grade 3, including ACLR, and thus may improve the temperature adaptability of amplifier 120 (and system 100). Flowchart 300 may include steps 302, 304, and 306. In step 302, the internal circuit 108 may initiate flowchart 300. In step 304, the internal circuit 108 may receive a temperature value Ta from the temperature sensing module 102. In step 306, the internal circuit 108 may dynamically adjust the voltage Vpa provided to the amplifier 120 based on the temperature value Ta. After step 306, flowchart 300 may iteratively return to step 304 to continue receiving updated temperature values ​​Ta. In combination Figure 1 and Figure 3 , Figure 4a and Figure 4b Each of 304 illustrates an embodiment of a temperature compensation voltage setting that may be implemented at step 306 .

[0024] like Figure 4a or Figure 4bAs shown, according to an embodiment of the present invention, in step 306, when the temperature value Ta is higher than the first temperature threshold value T1 or lower than the second temperature threshold value T2, the internal circuit 108 can drive the power supply circuit 112 to adjust the power supply voltage Vpa. For example, in step 306, when the temperature value Ta exceeds the temperature threshold value T1, the internal circuit 108 can drive the power supply circuit 112 to adjust the power supply voltage Vpa, and when the temperature value Ta is lower than the temperature threshold value T2, the internal circuit 108 can drive the power supply circuit 112 to adjust the power supply voltage Vpa. Figure 4a or Figure 4b As shown, according to an embodiment of the present invention, in step 306, when the temperature value Ta is higher than the temperature threshold value T1 and the power supply voltage Vpa is not the first voltage value V1, the internal circuit 108 can drive the power supply circuit 112 to adjust the power supply voltage Vpa to the first voltage value V1. When the temperature value Ta is lower than the temperature threshold value T2 and the power supply voltage Vpa is not the second voltage value V2, the internal circuit 108 can drive the power supply circuit 112 to adjust the power supply voltage Vpa to the second voltage value V2.

[0025] like Figure 4a or Figure 4b As shown, in one embodiment, the voltage value V1 may be higher than the voltage value V2, and the temperature thresholds T1 and T2 may be different, for example, the temperature threshold T1 may be higher than the temperature threshold T2. Figure 4a or Figure 4b As shown, in one embodiment, the temperature thresholds T1 and T2 may be higher than the upper limit TP1 of the temperature range of 3GPP, but may be lower than the upper limit TQ1 of the temperature range of AEC-Q100 Grade 3. For example, in one embodiment, since the upper limits TP1 and TQ1 may be 55°C and 85°C, respectively, the temperature thresholds T1 and T2 may be set to 75°C and 70°C, respectively.

[0026] like Figure 4b As shown, according to an embodiment of the present invention, in step 306, when the temperature value Ta is lower than the fourth temperature threshold value T4 and the power supply voltage Vpa is not the third voltage value V3, the internal circuit 108 can further drive the power supply circuit 112 to adjust the power supply voltage Vpa to the third voltage value V3. When the temperature value Ta is higher than the third temperature threshold value T3 and the power supply voltage Vpa is not the second voltage value V2, the internal circuit 108 can further drive the power supply circuit 112 to adjust the power supply voltage Vpa to the second voltage value V2. Figure 4b As shown, in one embodiment, the voltage value V2 may be higher than the voltage value V3, and the temperature thresholds T3 and T4 may be different, for example, the fourth temperature threshold T4 may be lower than the third temperature threshold T3. Figure 4bAs shown, in one embodiment, the temperature threshold T3 may be lower than the temperature threshold T2, and the relationship between the temperature thresholds T1 to T4 may be: T1>T2>T3>T4. Figure 4b As shown, in one embodiment, the temperature thresholds T3 and T4 may be higher than the lower limit TQ2 of the AEC-Q100 Grade 3 temperature range, but may be lower than the lower limit TP2 of the 3GPP temperature range. For example, in one embodiment, since the lower limits TQ2 and TP2 may be -40°C and -10°C, respectively, the temperature thresholds T3 and T4 may be set to -20°C and -25°C, respectively.

[0027] Combination Figure 1 , Figure 3 , Figure 4a and Figure 4b , FIG. 2c shows that when provided to the amplifier 120 ( Figure 1 ) of the power supply voltage Vpa according to Figure 3 and Figure 4a Eight sample curves c1 to c8 are provided showing how the ACLR of the amplifier 120 changes with temperature on eight different communication channels f1 to f8 when dynamically set. For example, the voltage Vpa can be set to 3.0 volts (i.e., V2=3.0) at low and normal temperatures, and set to a higher 3.4 volts (i.e., V1=3.4) at high temperatures. As shown in all eight curves c1 to c8 in FIG. 2c, by applying the temperature compensation voltage setting of the present invention, the ACLR can be maintained below the -33dB ACLR threshold on all channels f1 to f8, and with sufficient margin over the entire temperature range of AEC-Q100 Grade 3. The temperature compensation voltage setting of the present invention can also improve performance in other aspects other than ACLR, such as SEM and maximum output power, over the entire temperature range of AEC-Q100 Grade 3.

[0028] In summary, setting the power supply voltage of the RF power amplifier to a fixed constant value over the entire temperature range will degrade the transmission performance (e.g., at high or low temperatures). Compared with such a temperature-independent voltage setting, the temperature-compensated voltage setting of the present invention can dynamically adjust the power supply voltage in response to temperature, and thus can improve the transmission performance over the entire temperature range.

[0029] Those skilled in the art will readily observe that various modifications and variations can be made to the apparatus and methods while maintaining the teachings of the present invention.Therefore, the above disclosure should be interpreted as being limited only by the appended claims.

Claims

1. A method for adjusting the power supply voltage of an amplifier, characterized in that: include: Receive temperature value; and adjusting a power supply voltage provided to the amplifier according to the temperature value; Wherein, adjusting the power supply voltage provided to the amplifier according to the temperature value comprises: When the temperature value is higher than a first temperature threshold and the power supply voltage is not a first voltage value, adjusting the power supply voltage to the first voltage value; When the temperature value is lower than a second temperature threshold and the power supply voltage is not a second voltage value, adjusting the power supply voltage to the second voltage value; Wherein, the second voltage value is different from the first voltage value, and the first temperature threshold is higher than the second temperature threshold; The first temperature threshold and the second temperature threshold are higher than an upper limit of a temperature range of a 3rd Generation Partnership Project (3GPP) and lower than an upper limit of a temperature range of AEC-Q100 Grade 3.

2. The method for adjusting the power supply voltage of an amplifier according to claim 1, characterized in that: The temperature value is derived from at least one of an ambient temperature and a temperature of the amplifier.

3. The method for adjusting the power supply voltage of an amplifier according to claim 1, characterized in that: Adjusting the power supply voltage provided to the amplifier according to the temperature value also includes: When the temperature value is lower than a fourth temperature threshold and the power supply voltage is not the third voltage value, adjusting the power supply voltage to the third voltage value; The fourth temperature threshold is different from the first temperature threshold and the second temperature threshold.

4. The method for adjusting the power supply voltage of an amplifier according to claim 3, characterized in that: Adjusting the power supply voltage provided to the amplifier according to the temperature value also includes: When the temperature value is higher than a third temperature threshold and the power supply voltage is not the second voltage value, adjusting the power supply voltage to the second voltage value; The fourth temperature threshold is lower than the third temperature threshold, and the third temperature threshold is lower than the second temperature threshold.

5. The method for adjusting the power supply voltage of an amplifier according to claim 4, characterized in that: The third temperature threshold and the fourth temperature threshold are higher than a lower limit of the AEC-Q100 Grade 3 temperature range and lower than a lower limit of the 3GPP temperature range.

6. The method for adjusting the power supply voltage of an amplifier according to claim 1, characterized in that: The amplifier is a power amplifier for amplifying a radio frequency signal and outputting it to an antenna of a telematics system or a communication system.

7. The method for adjusting the power supply voltage of an amplifier according to claim 6, characterized in that: The communication system is a portable / handheld user equipment that complies with 2G, 3G, 4G or 5G specifications as specified by the 3rd Generation Partnership Project (3GPP) standards.

8. A controller for an amplifier, characterized in that: include: Sensor port, used to receive temperature values; and an internal circuit coupled between the sensor port and a power supply circuit for managing a power supply voltage provided to the amplifier; wherein: When the temperature value is higher than a first temperature threshold or lower than a second temperature threshold, the internal circuit is used to drive the power supply circuit to adjust the power supply voltage; Wherein, the first temperature threshold is higher than the second temperature threshold, and when the temperature value is higher than the first temperature threshold, the internal circuit is used to drive the power supply circuit to adjust the power supply voltage to a first voltage value; when the temperature value is lower than the second temperature threshold, the internal circuit is used to drive the power supply circuit to adjust the power supply voltage to a second voltage value; The first temperature threshold and the second temperature threshold are higher than an upper limit of a temperature range of the Third Generation Partnership Project (3GPP) and lower than an upper limit of a temperature range of AEC-Q100 Grade 3.

9. The controller according to claim 8, characterized in that: The temperature value is obtained from at least one of the ambient temperature and the temperature of the amplifier through a temperature sensing module.

10. The controller according to claim 8, characterized in that: When the temperature value is lower than a fourth temperature threshold and the power supply voltage is not the third voltage value, the internal circuit is further used to adjust the power supply voltage to the third voltage value; The fourth temperature threshold is different from the first temperature threshold and the second temperature threshold.

11. The controller according to claim 10, characterized in that: When the temperature value is higher than a third temperature threshold and the power supply voltage is not the second voltage value, the internal circuit is further used to adjust the power supply voltage to the second voltage value; The fourth temperature threshold is lower than the third temperature threshold, and the third temperature threshold is lower than the second temperature threshold.

12. The controller according to claim 11, characterized in that: The third temperature threshold and the fourth temperature threshold are higher than a lower limit of the AEC-Q100 Grade 3 temperature range and lower than a lower limit of the 3GPP temperature range.

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