Optoelectronic device

Abstract

An optoelectronic device includes a light emitter and a light receiver. The emitter is encapsulated in a transparent block. An opaque conductive layer is applied to the upper surface and the side surfaces of the transparent block. The receiver is mounted to the opaque conductive layer at the upper surface. An electrical connection is made between the receiver and the opaque conductive layer. A conductive strip is also mounted to the side surface of the transparent block and is isolated from the opaque conductive layer. A further electrical connection is made between the receiver and the conductive strip.

Description

[0001] Priority Claim

[0002] This application claims priority to French Patent Application No. 1912261, filed on October 31, 2019, the content of which is incorporated herein by reference in its entirety to the maximum extent permitted by law. Technical Field

[0003] The present disclosure generally relates to optoelectronic devices, and more particularly to devices including a light emitter and a light receiver. Background Art

[0004] Many electronic devices include a light emitter and a receiver configured to receive the light emitted by the emitter. For example, these are time-of-flight (TOF) sensors or optical switches.

[0005] A time-of-flight sensor enables the measurement of the distance between the sensor and an element of a scene. To this end, the time-of-flight sensor illuminates the scene with light and calculates the time taken for the light to travel between the element and the sensor. The time of flight of this light is proportional to the distance between the sensor and the object of the scene, thereby measuring the distance from the object of the scene to the sensor.

[0006] For example, when the distance between an optical switch and an object of a scene is shorter than a certain distance, the optical switch switches from one state to another state.

[0007] There is a need in the art to address all or some of the drawbacks of known optoelectronic devices. Summary of the Invention

[0008] One embodiment provides an optoelectronic device including a light emitter and a light receiver, the receiver being located on a layer that is opaque to the wavelength of light that can be emitted by the emitter, the opaque layer extending above the emitter.

[0009] According to one embodiment, the receiver faces a non-light-emitting portion of the emitter.

[0010] According to one embodiment, the opaque layer is made of a conductive material that electrically couples the receiver to a node to which a voltage is applied.

[0011] According to one embodiment, the emitter is covered by a first piece of material that is at least partially transparent to the wavelength of light that can be emitted by the emitter.

[0012] According to one embodiment, the opaque layer at least partially covers the first piece.

[0013] According to one embodiment, the belt at least partially extends over the first block, the receiver is electrically coupled to the belt, and the belt is made of a conductive material that is opaque to the wavelength of the light that can be emitted by the emitter.

[0014] According to one embodiment, the opaque layer completely covers the first block except for the region separating the opaque layer and the belt and except for the region facing the portion of the emitter intended to emit light.

[0015] According to one embodiment, a second block material that is at least partially transparent to the wavelength of the light that can be emitted by the emitter extends from the first block in the case of the portion of the emitter intended to emit light, and the sidewalls of the second block are covered by the opaque layer.

[0016] According to one embodiment, at least one filter is located at a position opposite the portion of the emitter intended to emit light and the portion of the receiver intended to receive light.

[0017] Another embodiment provides a method of manufacturing an optoelectronic device, the optoelectronic device including a receiver and an emitter of light, the method including: forming a layer that is opaque to the wavelength of the light that can be emitted by the emitter, the opaque layer extending above the emitter, and the receiver being located on the opaque layer.

[0018] According to one embodiment, the method includes forming a first block material that is at least partially transparent to the wavelength of the light that can be emitted by the emitter, and the first block covers the emitter.

[0019] According to one embodiment, the method includes forming a belt of conductive material that is opaque to the wavelength of the light that can be emitted by the emitter, the belt of conductive material at least partially extends over the first block, and the receiver is electrically coupled to the belt.

[0020] According to one embodiment, the opaque layer is formed to completely cover the first block except for the region separating the opaque layer and the belt and except for the region facing the portion of the emitter intended to emit light.

[0021] According to one embodiment, the method includes forming a second block material that is at least partially transparent to the wavelength of the light that can be emitted by the emitter, the second block material extends from the first block in the case of the portion of the emitter intended to emit light, and the sidewalls of the second block are covered by the opaque layer.

[0022] According to one embodiment, the first block and the second block are formed by resin molding. Description of the Drawings

[0023] In the following description of specific embodiments given by way of example and not limitation, the above features and advantages and other features and advantages will be described in detail with reference to the accompanying drawings, in which:

[0024] Figure 1 A three-dimensional view that is part of an embodiment of an optoelectronic device;

[0025] Figure 2 Is Figure 1 A cross-sectional view of an embodiment of;

[0026] Figure 3 Illustrates the manufacturing of Figure 1 Steps of an embodiment of;

[0027] Figure 4 Illustrates the manufacturing of Figure 1 Another step of an embodiment of;

[0028] Figure 5 Illustrates the manufacturing of Figure 1 Another step of an embodiment of;

[0029] Figure 6 Illustrates the manufacturing of Figure 1 Another step of an embodiment of; and

[0030] Figure 7 Is a cross-sectional view of another embodiment of an optoelectronic device. Detailed Description

[0031] In the respective figures, similar features have been designated by similar reference numerals. In particular, structural and / or functional features common among the various embodiments may have the same reference numerals and may be arranged with the same structure, dimensions, and material properties.

[0032] For clarity, only the operations and elements useful for understanding the embodiments described herein are illustrated and described in detail.

[0033] Unless otherwise indicated, when referring to two elements connected together, this means a direct connection without any intermediate element other than a conductor; and when referring to two elements coupled together, this means that the two elements may be connected or they may be coupled via one or more other elements.

[0034] In the following disclosure, unless otherwise indicated, when referring to absolute position modifiers (such as the terms "front", "rear", "top", "bottom", "left", "right", etc.) or relative position modifiers (such as, the terms "above", "below", "higher", "lower", etc.), or when referring to orientation modifiers (such as, "horizontal", "vertical", etc.), it refers to the orientation shown in the figure.

[0035] Unless otherwise specified, the expressions "about", "approximate", "substantially", and "approximately" mean within 10%, preferably within 5%.

[0036] Figure 1 and Figure 2 shows an embodiment of the optoelectronic device 10. Figure 1 is a three-dimensional view of a part of the device 10. Figure 2 is a cross-sectional view of the device 10 along the cross-sectional plane A.

[0037] For example, the device 10 is a time-of-flight sensor or an optical switch. The device 10 includes a transmitter 100 of light ( Figure 2 ) and a receiver 102 of light. The light emitted by the transmitter 100 is, for example, infrared light (for example, having a wavelength greater than 700 nm). The receiver 102 is configured to receive at least a part of the light emitted by the transmitter 100. For example, the receiver 102 is configured to receive the light emitted by the transmitter 100 and reflected on an element of a scene located opposite to the device 10.

[0038] For example, the receiver 102 and the transmitter 100 include circuitry (not shown) or are coupled to circuitry (not shown) that is configured to: determine the distance of an element of the scene based on the time between the emission of the light by the transmitter 100 and the reception of the light by the receiver 102.

[0039] The device 10 includes a support 104. The transmitter 100 is located on the support 104 and bonded to the support 104. The support 104 is made of, for example, at least partially an electrically insulating material.

[0040] In Figure 1 and Figure 2 embodiments, a conductive pad 106, such as a metal pad ( Figure 1 not shown in

[0041] is located on the upper surface of the support 104. The pads 106 are coupled together and / or to other electronic components (not shown) via connection components (not shown). The connection components are, for example, conductive vias and metallization layers located in the support 104. The connection components are, for example, conductive traces located on the upper surface of the support 104.

[0042] The transmitter 100 is located on a conductive pad 106, which is designated by the reference numeral 106a in Figure 2 . For example, the transmitter 100 is bonded to the pad 106a by a bonding layer 108 (for example, an adhesive layer). Preferably, the bonding layer 108 is a conductive layer.

[0043] For example, the transmitter 100 is coupled to one or more other conductive pads 106b, for example, by wire bonding, for example, by electrical bonding wires. Figure 2 A single pad 106a and a single pad 106b are shown.

[0044] The emitter 100 is coupled to a first node to which a potential is applied, for example via pad 106a. The emitter 100 is coupled to a second node to which a potential is applied, for example via pad 106b.

[0045] The device 10 includes a block 110 covering the emitter 100. The block 110 forms a protective housing around the emitter 100. The block 110 is made of a material that is at least partially transparent to the wavelength of the light that can be emitted by the emitter 100. Preferably, the block 110 is made of an electrically insulating material. For example, the block 110 is made of resin. The term material transparent to a wavelength designates a material that is at least 90% transparent to light having that wavelength.

[0046] The block 110 covers (e.g., encapsulates) the emitter 100, the conductive pad 106a, and the pad 106b. For example, the block 110 has a parallelepiped shape. The block 110 includes, for example, a substantially flat upper surface. The upper surface is, for example, substantially horizontal. The flat upper surface is, for example, substantially parallel to the upper surface of the support 104. The block 110 further includes side surfaces extending from the flat upper surface to the upper surface of the support 104. The side surfaces are, for example, substantially vertical. The side surfaces are, for example, substantially perpendicular to the flat upper surface and the upper surface of the support 104.

[0047] The device 10 further includes another block 112. The block 112 is made of a material that is at least partially transparent to the wavelength of the light that can be emitted by the emitter 100. Preferably, the block 112 is made of an electrically insulating material. For example, the block 112 is made of resin. The block 112 is preferably made of the same material as the block 110.

[0048] The block 112 is located on the upper surface of the block 110. The block 112 is in contact with the upper surface of the block 110. The block 112 faces the emitter 100. More precisely, the block 112 faces the part of the emitter 100 that emits light. The block 112 is positioned such that the light emitted by the emitter 100 passes through the block 110 and then through the block 112 before being emitted from the device 10 and reaching (i.e., irradiating) the scene.

[0049] The block 112 preferably has a parallelepiped shape. At the height where it is in contact with the block 110, the dimensions of the block 112 are preferably at least equal to the dimensions of the part of the emitter 100 that emits light. The block 112 includes, for example, a substantially flat upper surface. The upper surface is, for example, substantially horizontal. The flat upper surface is, for example, substantially parallel to the upper surface of the block 110. The block 112 further includes side surfaces extending from the flat upper surface to the side surface of the block 110. The side surfaces are, for example, substantially vertical. The side surfaces are, for example, substantially perpendicular to the flat upper surface and the upper surface of the block 110.

[0050] Block 112 partially covers block 110. Thus, the upper surface of block 110 includes an area not covered by block 112. In particular, block 110 includes an area not covered by block 112 that is large enough to accommodate receiver 102.

[0051] Device 10 includes layer 114, which at least partially covers block 110 and block 112. Layer 114 preferably entirely covers the side surfaces of block 112. More precisely, layer 114 completely covers the surfaces of block 112 except for the lower surface (i.e., the surface in contact with block 110) and the upper surface of block 112. In other words, layer 114 completely covers all the surfaces of block 112 except for the surfaces that cross the light rays arriving at the scene. Layer 114 at least partially covers the upper surface and the side surfaces of block 110.

[0052] Layer 114 includes, for example, portion 115 that extends on support 104. For example, like conductive pad 106, portion 115 is coupled to the conductive pad and / or to other electronic components via connection components, such as conductive vias and metallization layers located in support 104 or conductive traces located on the upper surface of support 104.

[0053] As a variant, layer 114 does not include portion 115 and is directly coupled to the connection components through the portion of layer 114 that covers the side walls of block 110.

[0054] Layer 114 is made of a conductive material, such as metal. Layer 114 is made of a material that is opaque to the wavelength of the light that can be emitted by the emitter. Layer 114 is made of copper, for example. For example, layer 114 is preferably covered with an additional layer (not shown) made of an alloy including nickel and gold. The additional layer not shown provides better bonding to blocks 110, 112. In addition, the additional layer not shown makes it possible to avoid oxidation of copper. The thickness of layer 114 is, for example, in the range from about 10 nm to about 15 nm. The term material opaque to the wavelength designates a material through which less than 0.001% of the light having that wavelength passes.

[0055] Preferably, layer 114 includes opening 116 (shown in Figure 1 but not shown in Figure 2 ). In the examples of Figure 1 and Figure 2 , opening 116 extends along the entire height of side surface 118 of block 110. However, opening 116 preferably does not extend over the entire surface 118. Preferably, opening 116 extends partially over the upper surface of block 110.

[0056] The belt 120 extends in the opening 116 on the block 110. Preferably, the belt 120 extends from the upper surface of the block 110 to the upper surface of the support 104. More precisely, the belt 120 extends partially on the upper surface of the block 110 and along the entire height of the block 110. Preferably, the belt 120 extends partially on the upper surface of the support 104.

[0057] The belt 120 is made of a conductive material such as metal. The belt 120 is made of a material that is opaque to the wavelength of the light that can be emitted by the emitter 100. Preferably, the belt 120 is made of the same material as the layer 114.

[0058] The belt 120 does not contact the layer 114. The belt 120 is not electrically connected to the layer 114. For example, like the conductive pad 106, the belt 120 is coupled to the conductive pad and / or other electronic components, for example by means of conductive vias and metallization layers located in the support 104, or by means of conductive traces located on the upper surface of the support 104.

[0059] As a variant, at the position of the belt 120, a cavity (not shown) can be positioned at the level of the opening 116 in the block 110. The depth of the opening 116 is preferably less than or equal to (preferably equal to) the thickness of the belt 120. The belt 120 is then positioned in the cavity.

[0060] Thus, except for the area in contact with the block 112 and except for the grooves that separate and electrically insulate the belt 120 from the layer 114, the block 110 is completely covered by materials (layer 114 and belt 120) that are opaque to the wavelength of the light that can be emitted by the emitter 100.

[0061] The receiver 102 is located above the block 110. Thus, the receiver 102 is located between the emitter and the scene. The receiver 102 is separated from the upper surface of the block 110 by the layer 114 and thus from the upper surface of the emitter 100. Thus, the receiver 102 is located on the layer 114 that covers the upper surface of the block 110. The receiver 102 is preferably bonded to the layer 114 by a bonding layer 122 (for example, an adhesive layer). The bonding layer 122 is preferably made of a conductive material.

[0062] The receiver 102 is offset with respect to the part of the light emitted by the emitter 100 to avoid blocking the emission of light passing through the block 112. Thus, the receiver 102 preferably faces the part of the emitter 100 that does not emit light.

[0063] The receiver 102 is preferably located near the belt 120. The receiver 102 is preferably located between the block 112 and the belt 120. Preferably, the receiver 102 is close enough to the belt 120 to be coupled to the belt 120 by a wire.

[0064] For example, the receiver 102 is coupled to the layer 114 on one hand and to the strip 120 on the other hand. For example, the layer 114 is coupled to a node that applies a reference voltage (e.g., ground voltage). Thus, the receiver 102 is coupled to the node applying the reference voltage via, for example, the bonding layer 122 and the layer 114. For example, the strip 120 is coupled to a node that applies another voltage. The receiver 102 is coupled to the node applying the other voltage via a wire and the strip 120. Similarly, the transmitter 100 is coupled to a node applying a voltage via the connection pad 106.

[0065] The device 10 further includes a block 124 that covers (i.e., encapsulates) the layer 114, the receiver 102, the layer 122, and a part of the support 104. The block 124 forms a protective housing around the receiver 102 and the blocks 100 and 112. The block 124 is made of a material that is at least partially transparent to the wavelength of the light that can be emitted by the transmitter 100. The block 124 is preferably made of an electrically insulating material. For example, the block 124 is made of resin. The block 112 is preferably made of the same material as the blocks 110 and 112.

[0066] The block 124 has, for example, a parallelepiped shape. The upper surface of the block 124 is, for example, coplanar with the upper surface of the block 112. For example, the block 124 surrounds the block 112 and exposes the upper surface of the block 112.

[0067] As a variation, the block 124 can at least partially cover the upper surface of the block 112.

[0068] Filters 126 and 128 are formed opposite the transmitter 100 and the receiver 102, respectively. Preferably, the filters 126 and 128 are made of a material having the following transmittance values: for wavelengths shorter than about 650 nm, preferably for wavelengths shorter than 750 nm, the transmittance value is less than about 10%; and for wavelengths greater than 900 nm, preferably for wavelengths greater than 850 nm, the transmittance value is greater than about 90%.

[0069] For example, the size of the filter 126 is substantially equal to or larger than the size of the area of the light emitted by the transmitter 100. In particular, the filter 126 preferably covers at least the entire surface of the block 112. Similarly, the horizontal size of the filter 128 is, for example, substantially equal to or larger than the size of the part of the light received by the receiver 102.

[0070] For clarity, Figure 1 the block 124 and the filters 126 and 128 are not shown in []. Similarly, Figure 1 the transmitter 100, the bonding layer 108, and the conductive pad 106 located below the layer 114 are not shown in [].

[0071] As a variant, the opening 116 can extend over a smaller area, for example, it may not extend over the upper surface of the block 110. The wire extending from the receiver to the strip 120 is then longer.

[0072] As a variant, the layer 114 completely covers the block 110 except for the portions in contact with the block 112 or the support 104. The transmitter 100 is coupled, for example, by a wire to a conductive pad, such as one located on the support.

[0073] For example, the path of the light rays emitted by the transmitter 100 includes: passing through the portion of the block 110 facing the transmitter 100, passing through the block 112, passing through the filter 126, propagating from the device 10 to an element in the scene, reflecting from the element in the scene, propagating from the element to the device 10, passing through the filter 128, and passing through the portion of the block 124 facing the receiver 102. The presence of the layer 114 around the blocks 110 and 112, especially between the paths of the light rays in the blocks 110, 112, and the receiver 102, enables ensuring that the receiver 102 does not directly receive light from the transmitter, that is, does not receive light emitted by the transmitter 100 that has not been reflected from an element in the scene.

[0074] Figures 3 to 6 An embodiment of a method for manufacturing Figure 1 and Figure 2 the device is shown, preferably in consecutive steps. Figures 3 to 6 The manufacturing of a single device 10 is described. In practice, multiple devices 10 are manufactured on multiple wafers, that is, multiple devices 10 are manufactured simultaneously on the same wafer. The multiple devices 10 form, for example, an array of devices. The devices 10 are separated from each other, for example, by a distance greater than or equal to approximately 250 μm. The steps described in conjunction Figures 3 to 6 are implemented simultaneously at multiple locations in the wafer.

[0075] Figure 3 An embodiment of the steps for manufacturing Figure 1 is shown.

[0076] During this step, a conductive pad 106 is formed on the support 104. Similarly, components for coupling the conductive pads are formed, that is, vias and metallization layers located in the support or conductive traces located on the support 104.

[0077] Then, the previously manufactured transmitter 100 is bonded to the pad 106. For example, the transmitter 100 is bonded to the pad 106a through a bonding layer 108 deposited on the pad 106.

[0078] A connection can also be formed between the emitter 100 and the pad 106b. This connection is formed, for example, as described above, for example, by an electrical (bonding) wire that couples the emitter 100 and the pad 106b.

[0079] Figure 4 Shows another step of manufacturing Figure 1 of an embodiment.

[0080] During this step, a block 110 is formed on the emitter 100. Preferably, the block 110 covers the conductive pad 106. For example, the block 110 is formed by resin molding to encapsulate the emitter 100 and the pad 106.

[0081] This step also includes forming a portion 114a of the layer 114, including forming the portion 115 if needed. This step also includes forming the strip 120.

[0082] According to one embodiment, a layer made of the materials of the layer 114 and the strip 120 is formed over the entire block 110 except for the positions of the opening 116 and the block 112. For example, these positions are covered by a mask during the formation of the portion 114a and the strip 120.

[0083] According to one embodiment, this step includes forming a cavity (not shown) in the block 110 and at the position of the strip 120. Preferably, the portion 114a and the strip 120 are formed after the cavity is formed.

[0084] Figure 5 Shows another step of manufacturing Figure 1 of an embodiment.

[0085] During this step, the receiver 102, which is preferably pre-formed, is bonded to the portion 114a. More precisely, the receiver 102 is bonded to the region of the portion 114a that is located on the upper surface of the block 110.

[0086] For example, the step of bonding the receiver includes forming a bonding layer 122 on the portion 114a and depositing the receiver 102 on the layer 122. Thus, the receiver 102 is electrically coupled to the portion 114a, for example, through the bonding layer 122.

[0087] During this step, an electrical connection is formed between the receiver 102 and the strip 120. For example, an electrical (bonding) wire is formed between the receiver 102 and the strip 120.

[0088] Figure 6 Shows Figure 1 another step in the manufacture of an embodiment.

[0089] During this step, the block 112 and the block 124 are formed.

[0090] According to one embodiment, a layer 30 made of the materials of block 112 and block 124 is formed on the structure obtained from the previous steps. The layer 30 is then etched to form block 124 and block 112. In particular, for example, the layer 30 is etched to be planarized at the level of the upper surface of block 124. The layer 30 is further etched to separate block 124 from the block 124 of other devices 10 on the same wafer. Trenches 32 are further etched at the position of the portion of layer 114 surrounding block 112. Thus, the trenches extend from the upper surface of layer 30 and extend all the way to portion 114a. The trenches 32 thus surround block 112.

[0091] As a variant, block 112 and block 124 can be separately formed, for example, by using a resin molding die.

[0092] Manufacturing Figure 1 The method of the embodiment includes steps not shown. In particular, during subsequent steps, the trenches 32 are filled with a material opaque to the wavelength of the light that can be emitted by the emitter 102. Preferably, this material is the same as the material of portion 114a of the layer 114 that has already been formed.

[0093] The method further includes forming filters 126 and 128.

[0094] For example, a masking film is formed on the upper surfaces of block 112 and block 124 to cover the positions not covered by the filters 126 and 128. Then, the filters 126 and 128 are formed at the positions not covered by the mask.

[0095] As a variant, for example, a layer made of the materials of filters 126 and 128 is formed to completely cover block 112 and 124 and the exposed portion of layer 114. The layer made of the materials of filters 126 and 128 is then etched to form filters 126 and 128.

[0096] The method further includes the step during which different devices 10 on the same wafer are individualized, that is, for example, the support 104 is sawed between different devices 10.

[0097] Figure 7 is a cross-sectional view of another embodiment of the optoelectronic device 40.

[0098] Except for the filters 126 and 128, the device 40 is the same as the device 10, and the filters 126 and 128 are replaced by a layer 42 made of the materials of filters 126 and 128. The receiver 102 and the emitter 100 face the same filter.

[0099] In Figure 7In the example of, layer 42 completely covers block 124 as well as the upper surface of block 112 and the exposed portion of layer 114. More precisely, in this embodiment, layer 42 covers the side surface of block 124, the upper surface of block 124, the upper surface of block 112, and the exposed portion of layer 114.

[0100] As a variant, layer 42 may not cover the side surface of block 124.

[0101] As a variant, layer 42 may partially cover the upper surface of block 124. Preferably, layer 42 covers at least the area opposite the portions of the emitter 100 and the receiver 102 that emit and receive light.

[0102] One advantage of the described embodiments is that the surface area used by each device is less than that used by a similar device in which both its emitter 100 and receiver 102 are formed on the support 104.

[0103] Another advantage of the described embodiments is that the opaque material separates the emitter and the receiver, thereby preventing light from reaching the receiver without being reflected off the scene, which would interfere with the measurement.

[0104] Various embodiments and variants have been described. Those skilled in the art will understand that certain features of these embodiments can be combined, and other variants will readily occur to those skilled in the art.

[0105] Finally, based on the functional descriptions provided above, the actual implementation of the embodiments and variants described herein is within the capabilities of those skilled in the art.

[0106] Such changes, modifications, and improvements are intended to be part of this disclosure and are intended to fall within the spirit and scope of the invention. Accordingly, the foregoing description is by way of example only and is not intended to be limiting. The invention is limited only by the appended claims and their equivalents.

Claims

1. An optoelectronic device, comprising: A support member having an upper surface, the upper surface including a first pad, a second pad, and a third pad; A transmitter mounted to the upper surface of the support member and electrically connected to the first pad; A first transparent block mounted to the upper surface of the support member and encapsulating the transmitter and the first pad; A first layer of conductive material extending on a side surface and an upper surface of the first transparent block, the first layer of conductive material being electrically connected to the second pad; A receiver mounted to the first layer of conductive material at the upper surface of the first transparent block; A second layer of conductive material extending on the side surface of the first transparent block, the second layer of conductive material being electrically connected to the third pad and the receiver; 2. The optoelectronic device according to claim 1, further comprising: A second transparent block mounted to the upper surface of the first transparent block at a position facing the transmitter; 3. The optoelectronic device according to claim 2, wherein the second layer of the conductive material also extends on a side surface of the second transparent block.

4. The optoelectronic device according to claim 2, further comprising a filter, the filter being mounted on an upper surface of the second transparent block.

5. The optoelectronic device according to claim 1, further comprising a third transparent block, the third transparent block being mounted on the upper surface of the support member and encapsulating the second solder pad, the third solder pad, the first layer of the conductive material, the second layer of the conductive material, and the receiver.

6. The optoelectronic device according to claim 5, further comprising a filter, the filter being mounted on an upper surface of the third transparent block at a position above the receiver.

7. The optoelectronic device according to claim 5, further comprising a second transparent block, the second transparent block being mounted on an upper surface of the first transparent block at a position facing the emitter.

8. The optoelectronic device according to claim 7, wherein the third transparent block also encapsulates the second transparent block.

9. The optoelectronic device according to claim 8, further comprising an opaque material between a side surface of the second transparent block and the third transparent block.

10. The optoelectronic device according to claim 5, further comprising a layer made of a filter material, the layer being mounted on an upper surface and a side surface of the third transparent block.

11. The optoelectronic device according to claim 1, wherein a part of the second layer of the conductive material extends on the upper surface of the first transparent block.

12. The optoelectronic device according to claim 1, wherein the first layer of the conductive material and the second layer of the conductive material are opaque.

13. The optoelectronic device according to claim 1, further comprising a first electrical connection between the receiver and the second layer of the conductive material.

14. The optoelectronic device according to claim 1, wherein the first electrical connection is a wire.

15. The optoelectronic device according to claim 13, further comprising a second electrical connection between the receiver and the first layer of the conductive material.

16. An optoelectronic device, comprising: A transmitter of light; A receiver of light; A first transparent block encapsulating the transmitter; And A layer on the upper surface of the first transparent block, wherein the layer is opaque to the wavelength of the light from the transmitter and wherein the layer extends partially over the transmitter; Wherein the receiver is mounted to the layer at the upper surface of the first transparent block; 17. The optoelectronic device according to claim 16, wherein the receiver is mounted at a position facing a non-light-emitting portion of the emitter.

18. The optoelectronic device according to claim 16, wherein the layer is made of a conductive material, and wherein the receiver is electrically coupled to a node to which a voltage is applied through the layer.

19. The optoelectronic device according to claim 16, wherein the layer extends on a side surface of the first transparent block.

20. The optoelectronic device according to claim 19, further comprising a strip made of a conductive material, the strip being opaque to the wavelength of the light from the emitter, the strip extending on the side surface of the first transparent block, isolated from the layer, and wherein the receiver is electrically connected to the strip.

21. The optoelectronic device according to claim 20, wherein the layer completely covers the surface of the first transparent block, except for the positions where the strip is located, a first region separating the layer and the strip; and a second region facing the light-emitting portion of the emitter.

22. The optoelectronic device according to claim 16, further comprising a second transparent block, the second transparent block being mounted on the upper surface of the first transparent block at a position facing the light-emitting portion of the emitter.

23. The optoelectronic device according to claim 22, further comprising an opaque layer covering the side surface of the second transparent block.

24. The optoelectronic device according to claim 16, further comprising: A filter located opposite the light-emitting portion of the transmitter and a filter located opposite the light-receiving portion of the receiver; 25. A method of manufacturing an optoelectronic device, comprising: Encapsulating a light transmitter in a first transparent block; Forming a layer at least partially covering the upper surface and the side surface of the first transparent block, the layer being opaque to the wavelength of the light emitted by the transmitter; Mounting a light receiver to the layer at the upper surface of the first transparent block; 26. The method according to claim 25, wherein the layer is electrically conductive and further comprises electrically connecting the receiver to the electrically conductive layer.

27. The method according to claim 25, further comprising: Forming a strip made of a conductive material, the strip extending on the side surface of the first transparent block; And Electrically connecting the receiver to the strip; 28. The method according to claim 27, wherein the tape is opaque to the wavelength of the light emitted by the emitter.

29. The method according to claim 28, wherein the layer completely covers the first transparent block, except for the locations of: the tape; the regions separating the layer and the tape; and the regions facing the light-emitting portion of the emitter.

30. The method according to claim 25, further comprising: Forming a second transparent block extending from the upper surface of the first transparent block at a position facing the light-emitting portion of the transmitter; 31. The method according to claim 30, further comprising: Covering the side wall of the second transparent block with an opaque layer.

32. The method according to claim 30, wherein the first transparent block and the second transparent block are formed by resin molding.

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