AC Solid State Switches

Abstract

An AC electronic solid-state switch includes: an electrically insulating and thermally conductive layer; a first conductive trace; a second conductive trace; and a plurality of semiconductor die, each semiconductor die being electrically connected to the first conductive trace and the second conductive trace. Each of the plurality of semiconductor dies forms a MOSFET, an IGBT, or other type of electronically controllable switch. The AC electronic solid-state switch also includes a common drain conductor electrically connected to each drain terminal of the plurality of semiconductor dies. The AC electronic solid-state switch is configured to block between 650 volts and 1700 volts in a first direction and a second direction in an off state, the second direction being opposite to the first direction, and the AC electronic solid-state switch is configured to carry at least 500 A continuously in an on state, with a voltage drop of less than 2 V.

Description

Technical Field

[0001] introduction

[0002] The present disclosure relates to electrical components, and more particularly to alternating current (AC) electronic solid state switches and assemblies. Background Art

[0003] Existing high voltage, high current electromechanical relays are heavy (i.e., have a mass greater than 0.5 kg), have slow switching speeds (i.e., switching speeds greater than 10 ms), and are prone to contact welding during high current switching due to contact bounce. Further, existing electromechanical relays generate audible noise during switching that is annoying to customers. Therefore, there is a need to develop a switch that is lightweight, has a fast switching speed, and is reliable. Further, for fault-tolerant and / or dual-purpose applications, effective control in both directions may be useful for some solid-state switches. For example, in order to effectively control reconfigurable storage in both charging and discharging modes, a bidirectionally controllable solid-state switch with a low voltage drop is useful. Summary of the invention

[0004] The presently disclosed AC electronic solid-state switch is capable of bidirectionally blocking at least between 650 volts and 1700 volts during an off state. Further, the AC electronic solid-state switch continuously carries at least 500 amperes of direct current during an on state with a voltage drop of less than 2 volts. In addition, the AC electronic solid-state switch has a mass equal to or less than 300 grams. The AC electronic solid-state switch has a maximum width between 65 mm and 70 mm, a maximum length between 85 mm and 95 mm, and a maximum height of 25 mm, thereby minimizing the size of the switch assembly.

[0005] In aspects of the present disclosure, an AC electronic solid-state switch may include: a substrate; an electrically insulating and thermally conductive layer disposed on the substrate; a first conductive trace disposed on the electrically insulating and thermally conductive layer; a second conductive trace disposed on the electrically insulating and thermally conductive layer; and a plurality of semiconductor dies, each semiconductor die being electrically connected to the first conductive trace and the second conductive trace. Each of the plurality of semiconductor dies forms a MOSFET, an IGBT, or other type of electronically controllable switch. The electronically controllable switch (e.g., a MOSFET) includes a gate terminal, a drain terminal, and a source terminal. The AC electronic solid-state switch also includes a common drain conductor electrically connected to each drain terminal of the plurality of semiconductor dies. Each of the plurality of semiconductor dies is disposed on the common drain conductor. The AC electronic solid-state switch has an on state and an off state, wherein the AC electronic solid-state switch is configured to block between 650 volts and 1700 volts in a first direction and a second direction in the off state, the second direction being opposite to the first direction, and the AC electronic solid-state switch is configured to continuously carry at least 500 A in the on state, wherein the voltage drop is less than 2 V.

[0006] Each drain terminal of the plurality of semiconductor dies may be directly connected to a common drain conductor. The common drain conductor may be the only drain conductor. Each of the plurality of semiconductor dies may be in direct contact with the common drain conductor. The semiconductor dies may be electrically connected to each other in parallel.

[0007] The AC electronic solid state switch may also include a plurality of signal conductors. The signal conductors may be electrically connected to the semiconductor die. The signal conductors may include a plurality of gate conductors and a plurality of source conductors.

[0008] The AC electronic solid-state switch also includes a plurality of electrical bonds. The electrical bonds include wire bonds and ribbon bonds. Each source terminal of the plurality of semiconductor dies can be electrically connected to the plurality of source conductors. The ribbon bonds can electrically connect the plurality of semiconductor dies to the source conductors.

[0009] Each gate terminal of the semiconductor die may be electrically connected to the plurality of gate conductors. A wire bond may electrically connect the semiconductor die to the plurality of gate conductors. Each of the semiconductor dies has a minimum area of ​​20 square millimeters. The thickness of the substrate may be between 2 millimeters and 3 millimeters, and the substrate includes copper. The semiconductor die includes between 8 and 24 semiconductor dies, each semiconductor die having a voltage rating between 650 V and 1700 V. Each semiconductor die has a specific on-resistance of less than 4.5 mΩ-cm 2 The mass of an AC electronic solid-state switch can be less than 300 grams.

[0010] In aspects of the present disclosure, an AC electronic solid-state switch may include: a substrate; an electrically insulating and thermally conductive layer disposed on the substrate; and a first conductive trace disposed on the electrically insulating and thermally conductive layer. The first conductive trace is a first drain conductor. The AC electronic solid-state switch also includes a second conductive trace disposed on the electrically insulating and thermally conductive layer. The second conductive trace is a second drain conductor. The AC electronic solid-state switch also includes a plurality of semiconductor dies, each of which is electrically connected to the first conductive trace and the second conductive trace. Each of the semiconductor dies forms a MOSFET, and the MOSFET includes a gate terminal, a drain terminal, and a source terminal. The semiconductor dies include a first group of semiconductor dies and a second group of semiconductor dies. The first group of semiconductor dies is disposed on the first conductive trace. The second group of semiconductor dies is disposed on the second conductive trace. The AC electronic solid-state switch may include a common source conductor electrically connected to each source terminal of the plurality of semiconductor dies. Each of the semiconductor dies is disposed on the common source conductor. The AC electronic solid-state switch has an on state and an off state. The AC electronic solid-state switch is configured to block between 650 volts and 1700 volts in a first direction and a second direction in an off state, the second direction being opposite to the first direction, and is configured to carry at least 500 A continuously in an on state with a voltage drop of less than 2 V.

[0011] Each source terminal of the semiconductor die may be directly connected to a common source conductor. The common source conductor may be the only source conductor. Each of the first group of semiconductor dies may be in direct contact with the first conductive trace. Each of the second group of semiconductor dies may be in direct contact with the second conductive trace. Each of the plurality of semiconductor dies may be electrically connected in parallel to each other.

[0012] The AC electronic solid-state switch also includes a plurality of signal conductors. Each of the plurality of signal conductors may be electrically connected to the plurality of semiconductor dies. The signal conductor may include a plurality of gate conductors. The AC electronic solid-state switch may also include a plurality of electrical bonds. The electrical bonds may include wire bonds and ribbon bonds. Each source terminal of a semiconductor die may be electrically connected to a common source conductor. A ribbon bond may electrically connect the plurality of semiconductor dies to a common source conductor. Each gate terminal of the plurality of semiconductor dies may be electrically connected to the plurality of gate conductors. A wire bond may electrically connect the plurality of semiconductor dies to the plurality of gate conductors. Each of the plurality of semiconductor dies may have a minimum area of ​​20 square millimeters. The thickness of the substrate may be between 2 millimeters and 3 millimeters, and the substrate may include copper, aluminum, molybdenum, or alloys thereof, or a metal matrix composite material (such as AlSiC).

[0013] The AC electronic solid-state switch may include between 8 and 24 semiconductor dies, each semiconductor die having a voltage rating between 650 V and 1700 V. The specific on-resistance of each semiconductor die is less than 4.5 mΩ-cm 2 The AC electronic solid-state switch has a mass of less than 300 grams.

[0014] Solution 1. An alternating current (AC) electronic solid-state switch, the electronic solid-state switch comprising:

[0015] Electrical insulation and thermal conductivity layer;

[0016] a first electrically conductive trace disposed on the electrically insulating and thermally conductive layer;

[0017] a second electrically conductive trace disposed on the electrically insulating and thermally conductive layer;

[0018] a plurality of semiconductor dies, each semiconductor die electrically connected to the first conductive trace and the second conductive trace, wherein each of the plurality of semiconductor dies forms a MOSFET, and the MOSFET includes a gate terminal, a drain terminal, and a source terminal;

[0019] a common drain conductor electrically connected to each drain terminal of the plurality of semiconductor dies, wherein each of the plurality of semiconductor dies is disposed on the common drain conductor; and

[0020] The AC electronic solid-state switch has an on state and an off state, wherein the AC electronic solid-state switch is configured to block between 650 volts and 1700 volts in a first direction and a second direction in the off state, the second direction being opposite to the first direction, and the AC electronic solid-state switch is configured to continuously carry at least 500 A in the on state with a voltage drop of less than 2 V.

[0021] Option 2. According to Option 1, the AC electronic solid-state switch also includes a substrate, wherein the electrical insulation and thermal conductivity layer is disposed on the substrate, each drain terminal of the plurality of semiconductor dies is directly connected to the common drain conductor, wherein the common drain conductor is the only drain conductor, each of the plurality of semiconductor dies is in direct contact with the common drain conductor, and the plurality of semiconductor dies are electrically connected in parallel to each other.

[0022] Option 3. The AC electronic solid-state switch according to Option 2 further comprises a plurality of signal conductors, wherein the plurality of signal conductors are electrically connected to the plurality of semiconductor dies, and the plurality of signal conductors comprise a plurality of gate conductors and a plurality of source conductors.

[0023] Option 4. According to Option 3, the AC electronic solid-state switch also includes a plurality of electrical bonds, the plurality of electrical bonds including wire bonds and ribbon bonds, wherein each source terminal of the plurality of semiconductor tube cores is electrically connected to the plurality of source conductors, and the ribbon bonds electrically connect the plurality of semiconductor tube cores to the plurality of source conductors.

[0024] Embodiment 5. The AC electronic solid-state switch of Embodiment 4, wherein each gate terminal of the plurality of semiconductor dies is electrically connected to the plurality of gate conductors, and the wire bonds electrically connect the plurality of semiconductor dies to the plurality of gate conductors.

[0025] Embodiment 6. The AC electronic solid-state switch of Embodiment 5, wherein each of the plurality of semiconductor dies has a minimum area of ​​20 square millimeters.

[0026] Embodiment 7. An AC electronic solid-state switch according to Embodiment 6, wherein the thickness of the substrate is between 2 mm and 3 mm, and the substrate comprises copper.

[0027] Embodiment 8. The AC electronic solid-state switch of Embodiment 7, wherein the plurality of semiconductor dies includes between 8 and 24 semiconductor dies, each semiconductor die having a voltage rating between 650 V and 1700 V.

[0028] Solution 9. An AC electronic solid-state switch according to Solution 8, wherein the specific on-resistance of each semiconductor die is less than 4.5 mΩ-cm 2 .

[0029] Option 10. The AC electronic solid-state switch according to Option 9, wherein the mass of the AC electronic solid-state switch is less than 300 grams.

[0030] Solution 11. An alternating current (AC) electronic solid-state switch, the AC electronic solid-state switch comprising:

[0031] Electrical insulation and thermal conductivity layer;

[0032] a first electrically conductive trace disposed on the electrically insulating and thermally conductive layer, wherein the first electrically conductive trace is a first drain conductor;

[0033] a second electrically conductive trace disposed on the electrically insulating and thermally conductive layer, wherein the second electrically conductive trace is a second drain conductor;

[0034] a plurality of semiconductor dies, each semiconductor die being electrically connected to the first conductive trace and the second conductive trace, wherein each of the plurality of semiconductor dies forms an electronically controllable switch, the plurality of semiconductor dies comprising a first group of semiconductor dies and a second group of semiconductor dies, the first group of semiconductor dies being disposed on the first conductive trace and the second group of semiconductor dies being disposed on the second conductive trace;

[0035] a common source conductor electrically connected to each source terminal of the plurality of semiconductor dies, wherein each of the plurality of semiconductor dies is disposed on the common source conductor; and

[0036] The AC electronic solid-state switch has an on state and an off state, wherein the AC electronic solid-state switch is configured to block between 650 volts and 1700 volts in a first direction and a second direction in the off state, the second direction being opposite to the first direction, and the AC electronic solid-state switch is configured to continuously carry at least 500 A in the on state with a voltage drop of less than 2 V.

[0037] Option 12. According to Option 11, the AC electronic solid-state switch also includes a substrate, wherein the electrically insulating and thermally conductive layer is disposed on the substrate, each source terminal of the multiple semiconductor tube cores is directly connected to the common source conductor, wherein the common source conductor is the only source conductor, each of the first group of semiconductor tube cores is directly in contact with the first conductive trace, each of the second group of semiconductor tube cores is directly in contact with the second conductive trace, and each of the multiple semiconductor tube cores is electrically connected in parallel to each other, the electronically controllable switch is at least selected from MOSFET and IGBT, and the MOSFET includes a gate terminal, a drain terminal and a source terminal.

[0038] Embodiment 13. The AC electronic solid-state switch according to Embodiment 12, further comprising a plurality of signal conductors, wherein each of the plurality of signal conductors is electrically connected to the plurality of semiconductor dies, and the plurality of signal conductors comprises a plurality of gate conductors.

[0039] Option 14. According to Option 13, the AC electronic solid-state switch also includes a plurality of electrical bonds, wherein the plurality of electrical bonds include wire bonds and ribbon bonds, each source terminal of the plurality of semiconductor dies is electrically connected to the common source conductor, and the ribbon bonds electrically connect the plurality of semiconductor dies to the common source conductor.

[0040] Embodiment 15. The AC electronic solid-state switch of Embodiment 14, wherein each gate terminal of the plurality of semiconductor dies is electrically connected to the plurality of gate conductors, and the wire bonds electrically connect the plurality of semiconductor dies to the plurality of gate conductors.

[0041] Embodiment 16. The AC electronic solid-state switch of Embodiment 15, wherein each of the plurality of semiconductor dies has a minimum area of ​​20 square millimeters.

[0042] Option 17. An AC electronic solid-state switch according to Option 16, wherein the thickness of the substrate is between 2 mm and 3 mm, and the substrate includes at least one selected from the following: copper, aluminum, molybdenum, alloys thereof, and metal matrix composite materials.

[0043] Embodiment 18. An AC electronic solid-state switch according to Embodiment 17, wherein the plurality of semiconductor dies includes between 8 and 24 semiconductor dies, each semiconductor die having a voltage rating between 650 V and 1700 V.

[0044] Embodiment 19. An AC electronic solid-state switch according to embodiment 18, wherein the specific on-resistance of each semiconductor die is less than 4.5 mΩ-cm 2 .

[0045] Option 20. An AC electronic solid-state switch according to Option 19, wherein the mass of the AC electronic solid-state switch is less than 300 grams.

[0046] The above features and advantages and other features and advantages of the present teachings are readily apparent from the following detailed description of some of the best modes and other embodiments for carrying out the present teachings as defined in the appended claims when taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 is a schematic circuit diagram of an AC electronic solid-state switch having a common drain conductor.

[0048] Figure 2 yes Figure 1 Schematic top view of an AC electronic solid-state switch.

[0049] Figure 3 is a schematic top view of an AC electronic solid-state switch with a common drain conductor according to another aspect of the present disclosure.

[0050] Figure 4 yes Figure 1 Schematic front view of the semiconductor die of an AC electronic solid-state switch.

[0051] Figure 5is a schematic circuit diagram of an AC electronic solid-state switch having a common source conductor.

[0052] Figure 6 yes Figure 4 Schematic top view of an AC electronic solid-state switch.

[0053] Figure 7 is a schematic top view of an AC electronic solid-state switch with a common drain conductor according to another aspect of the present disclosure. DETAILED DESCRIPTION

[0054] The following detailed description is merely exemplary in nature and is not intended to limit the application and uses. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding introduction, summary or the following detailed description.

[0055] Embodiments of the present disclosure may be described herein in terms of functional and / or logical block components and various processing steps. It should be appreciated that such block components may be implemented by many hardware, software and / or firmware components configured to perform specified functions. For example, embodiments of the present disclosure may employ various integrated circuit components, such as memory elements, digital signal processing elements, logic elements, lookup tables, etc., which may implement a variety of functions under the control of one or more microprocessors or other control devices. In addition, those skilled in the art will appreciate that embodiments of the present disclosure may be practiced in conjunction with many systems, and the systems described herein are merely exemplary embodiments of the present disclosure.

[0056] For the sake of brevity, technologies related to signal processing, data fusion, signaling, control, and other functional aspects of the system (and the various operating components of the system) may not be described in detail herein. In addition, the connecting lines shown in the various figures included herein are intended to represent example functional relationships and / or physical connections between various elements. It should be noted that alternative or additional functional relationships or physical connections may exist in embodiments of the present disclosure.

[0057] refer to Figure 1 and Figure 2, the AC electronic solid-state switch 102 has an off state and an on state, and can be part of a switch assembly. The switch assembly may additionally include a polymer housing for accommodating and encapsulating the AC electronic solid-state switch 102 and retaining hardware. Due to its configuration as described below, the AC electronic solid-state switch 102 is capable of bidirectionally blocking between 650 volts and 1700 volts during the off state (as indicated by the double arrow DA). The double arrow indicates a first direction A1 and a second direction A1 opposite to the first direction A2. Due to its configuration as described below, the AC electronic solid-state switch continuously carries at least 500 amperes of direct current during the on state, wherein the voltage drop is less than 2 volts. Due to its configuration as described below, the AC electronic solid-state switch 102 has a mass equal to or less than 300 grams. Due to its configuration as described below, the switch assembly (and therefore the AC electronic solid-state switch 102) has a maximum width between 65 mm and 70 mm, a maximum length between 85 mm and 95 mm, and a maximum height of 25 mm, thereby minimizing the size of the switch assembly.

[0058] The AC electronic solid-state switch 102 includes a substrate 106 having mounting holes on opposite sides of the substrate 106. The maximum thickness of the substrate 106 may be between 2 mm and 3 mm to minimize the overall size of the AC electronic solid-state switch 102. Further, the substrate 106 has a substantially planar shape (and thus a flat configuration) to minimize the overall size of the AC electronic solid-state switch 102. In addition, the substrate 106 may be made of a conductive material (such as metal) in whole or in part. For example, the substrate 106 may be made of copper in whole or in part and may be mounted to a heat sink. The substrate 106 may preferably have pin-fins. The substrate 106 may include holes 107 for mounting to another structure.

[0059] The AC electronic solid-state switch 102 includes an electrically insulating and thermally conductive layer 108 disposed on the substrate 106 (although not directly thereon). The electrically insulating and thermally conductive layer 108 may be made of a ceramic material in whole or in part. Suitable ceramic materials for the electrically insulating and thermally conductive layer 108 include, but are not limited to, aluminum oxide (Al2O3), aluminum nitride (AlN), aluminum silicon carbide (AlSiC), silicon nitride (Si3N4), diamond, gallium oxide, and the like. The electrically insulating and thermally conductive layer 108 may be part of a directly bonded substrate, such as a directly bonded aluminum (DBA) substrate or a directly bonded copper (DBC) substrate, and its thickness may be between 0.1 mm and 0.4 mm. In addition to the electrically insulating and thermally conductive layer 108, the directional bonded substrate also includes a metal sheet bonded to the electrically insulating and thermally conductive layer 108.

[0060] A solder layer may be disposed between the substrate 106 and the electrically insulating and thermally conductive layer 108 to couple the substrate 106 to the electrically insulating and thermally conductive layer 108. The term "solder" means a low melting point alloy used to join less fusible metals, particularly low melting point alloys based on lead and tin or (for higher temperatures) based on brass or silver. The solder layer may be disposed directly on the substrate 106 to facilitate and enhance the connection between the solder layer and the substrate 106. Each of the substrate 106, the electrically insulating and thermally conductive layer 108, and the solder layer may have a planar shape to minimize the size of the connection through the AC electronic solid-state switch 102.

[0061] The AC electronic solid-state switch 102 also includes a first conductive trace 116 disposed directly on the electrically insulating and thermally conductive layer 108 to minimize the size occupied by the AC electronic solid-state switch 102. The first conductive trace 116 is disposed directly on (and directly bonded to) the electrically insulating and thermally conductive layer 108 to enhance the structural integrity of the AC electronic solid-state switch 102. The first conductive trace 116 has a planar shape to minimize its size and is directly connected to the first power terminal 132a. Further, the first conductive trace 116 is made in whole or in part of a metallic material (such as copper, aluminum, and / or alloys thereof).

[0062] The AC electronic solid-state switch 102 also includes a second conductive trace 118 disposed directly on the electrically insulating and thermally conductive layer 108 to minimize the space occupied by the AC electronic solid-state switch 102. For example, the second conductive trace 118 is disposed directly on (and directly bonded to) the electrically insulating and thermally conductive layer 108. The second conductive trace 118 has a planar shape to minimize its size and is directly connected to the second power terminal 132b. Further, the conductive trace 118 is made of a metallic material such as copper, aluminum, and / or alloys thereof.

[0063] The AC electronic solid-state switch 102 also includes a plurality of signal conductors 120 (i.e., source conductors and gate conductors) disposed directly on the electrically insulating and thermally conductive layer 108. The signal conductors 120 include a first source conductor 120a, a second source conductor 120b, a first gate conductor 120c, and a second gate conductor 120d. The first conductive trace 116 may have a rectangular shape to facilitate manufacturing. The second conductive trace 118 may also have a rectangular shape to facilitate manufacturing. The first source conductor 120a, the second source conductor 120b, the first gate conductor 120c, and the second gate conductor 120d are made entirely or partially of a metallic material (such as copper or aluminum) and are directly bonded to the electrically insulating and thermally conductive layer 108 (e.g., a ceramic layer). The AC electronic solid-state switch 120 is kept on or off by drawing near zero power (i.e., less than one watt) through a control input carried by the signal conductors 120, and the AC electronic solid-state switch 102 is configured to selectively control current in either direction (as indicated by the double arrow DA).

[0064] The AC electronic solid-state switch 102 also includes a common drain conductor 121 disposed directly on the electrically insulating and thermally conductive layer 108. The common drain conductor 121 can be the only drain conductor in the AC electronic solid-state switch 102 to minimize the complexity of the AC electronic solid-state switch 102. The common drain conductor 121 can have a rectangular shape to facilitate manufacturing and can be made of a metallic material (such as copper or aluminum) in whole or in part. The first source conductor 120a and the first gate conductor 120c are disposed between the first conductive trace 116 and the common drain conductor 121. The second source conductor 120b and the second gate conductor 120d are disposed between the common drain conductor 121 and the second conductive trace 118.

[0065] The AC electronic solid-state switch 102 includes a plurality of semiconductor dies 122, each of which is directly placed on a common drain source 121 to facilitate the flow of electricity. Although the depicted embodiment shows sixteen semiconductor dies 122, the AC electronic solid-state switch 102 includes between 8 and 24 semiconductor dies 122 (each having a voltage rating from 650 volts to 1700 volts) electrically connected in parallel with each other to carry 500 A current and enhance scalability. Each of the plurality of semiconductor dies 122 forms a metal oxide semiconductor field effect transistor (MOSFET) 123, an insulated gate bipolar transistor (IGBT), or other types of electronically controllable switches. Therefore, the element 123 may refer to a MOSFET, an IGBT, or other types of electronically controllable switches. The MOSFET 123 includes a source terminal S, a gate terminal G, and a drain terminal D. Each of the semiconductor dies 122 has a minimum area of ​​20 square millimeters to carry 400 A current.

[0066] Each of the plurality of semiconductor dies 122 includes a semiconductor material such as silicon, silicon carbide, gallium oxide, and gallium nitride. The semiconductor dies 122 are arranged in a predetermined placement point on top of the directly bonded substrate to maintain substantially equal resistance between the first power terminal 132a and the second power terminal 132b in each semiconductor die 122. The bottom side of each of the semiconductor dies 122 is directly coupled to the common drain conductor 121. Each of the semiconductor dies 122 has a resistance of less than 4.5 m-Ωcm 2 The placement of the semiconductor die 122 and the pattern of the directly bonded substrate 108 achieve equal current distribution and low parasitic inductance. The AC electronic solid-state switch 102 may include a plurality of damping resistors 125, each damping resistor being electrically connected in series to the gate terminal G of a corresponding MOSFET 123 to prevent or at least minimize power oscillations. The plurality of semiconductor die 122 are electrically connected in parallel to each other.

[0067] The AC electronic solid-state switch 102 includes a plurality of first electrical bonds 126, each of which is electrically connected to a corresponding one of the plurality of semiconductor dies 122. Specifically, each of the plurality of first electrical bonds 126 electrically connects the source terminal S of the corresponding MOSFET 123 to either the first conductive trace 116 or the second conductive trace 118. Each of the plurality of first electrical bonds 126 electrically interconnects the plurality of semiconductor dies 122 and the second conductive trace 118. Each of the plurality of first electrical bonds 126 can be a high-current aluminum or copper ribbon bond or foil bond to minimize parasitic inductance and resistance. For simplicity, only three semiconductor dies 122 are shown, wherein the electrical bonds 126 are attached to either the first conductive trace 116 or the second conductive trace 118. However, each of the semiconductor dies 122 is attached to two electrical bonds 126.

[0068] The AC electronic solid-state switch 102 also includes a plurality of second electrical bonds 128, each of which electrically connects the plurality of signal conductors 120 to the plurality of semiconductor dies 122. Specifically, each of the plurality of second electrical bonds 128 electrically connects the gate terminal G or the source terminal S of the corresponding MOSFET 123 to the first source conductor 120a, the second source conductor 120b, the first gate conductor 120c, or the second gate conductor 120d. The plurality of second electrical bonds 128 can be short low-current wire bonds to minimize parasitic inductance and resistance. For simplicity, only three semiconductor dies 122 are shown, wherein the plurality of second electrical bonds 128 are attached to the signal conductors 120. However, each of the semiconductor dies 122 is attached to two of the plurality of second electrical bonds 128.

[0069] The AC electronic solid-state switch 102 may include a plurality of power terminals 132 (e.g., Figure 2 1 . The first power terminal 132a is directly coupled to (and electrically connected to) the first conductive trace 116. The second power terminal 132b is directly coupled to (and electrically connected to) the second conductive trace 118. The power terminals 132 are electrically isolated from the substrate 106.

[0070] Optionally, the AC electronic solid-state switch 102 may include Figure 2 One or more thermistors 134 are shown in FIG. 1 , which are directly connected to the directly bonded substrate 115 to measure (with optimal accuracy) the temperature of the AC electronic solid state switch 102 . The thermistor 134 measures and monitors the temperature of the AC electronic solid state switch 102 .

[0071] about Figure 3 , except for the features described below, the structure and function of the AC electronic solid-state switch 102a are substantially the same as the AC electronic solid-state switch 102 described above. The first conductive trace 116 is disposed between the first source conductor 120a and the common drain conductor 121. The second conductive trace 118 is disposed between the second source conductor 120b and the common drain conductor 121. This configuration facilitates manufacturing and enhances reliability.

[0072] about Figure 5 and Figure 6, except for the features described below, the structure and function of the AC electronic solid-state switch 102b are substantially the same as the AC electronic solid-state switch 102 described above. The semiconductor die 122 is directly disposed on the first conductive trace 116 and the second conductive trace 118. The drain terminal D of the MOSFET 123 is electrically connected (and directly connected) to either the first conductive trace 116 or the second conductive trace 118. Therefore, the first conductive trace 116 may be referred to as a first drain conductor, and the second conductive trace 118 may be referred to as a second drain conductor. Further, the semiconductor die 122 includes a first group of semiconductor dies 122a and a second group of semiconductor dies 122b. The semiconductor dies 122 are electrically connected in parallel to each other. Each of the first group of semiconductor dies 122a is directly disposed on (and in direct contact with) the first conductive trace 116 to enhance the structural integrity of the AC electronic solid-state switch 102. Each of the second group of semiconductor dies 122b is disposed directly on (and in direct contact with) the second conductive trace 118 to enhance the structural integrity of the AC electronic solid-state switch 102. The AC electronic solid-state switch 102 also includes a common source conductor 127 that is electrically connected to each of the semiconductor dies 122 through the plurality of first electrical bonds 126 (e.g., ribbon bonds). The first source conductor 120a and the first gate conductor 120c are disposed between the first conductive trace 116 and the common source conductor 127. The second source conductor 120b and the second gate conductor 120d are disposed between the common source conductor 127 and the second conductive trace 118. The common source conductor 127 is the only source conductor to minimize the complexity of the AC electronic solid-state switch 102.

[0073] about Figure 7 , except for the features described below, the structure and function of the AC electronic solid-state switch 102c are substantially the same as the AC electronic solid-state switch 102b described above. The first conductive trace 116 is disposed between the first source conductor 120a and the common source conductor 127. The second conductive trace 118 is disposed between the second source conductor 120b and the common source conductor 127. This configuration facilitates manufacturing and enhances reliability.

[0074] The detailed description and the accompanying drawings or diagrams support and describe the present teaching, but the scope of the present teaching is limited only by the claims. Although the best mode and some of the other embodiments for implementing the present teaching have been described in detail, there are various alternative designs and embodiments for practicing the present teaching defined in the appended claims.

Claims

1. An alternating current electronic solid-state switch, the electronic solid-state switch comprising: Electrical insulation and thermal conductivity layer; a first electrically conductive trace disposed on the electrically insulating and thermally conductive layer; a second electrically conductive trace disposed on the electrically insulating and thermally conductive layer; a plurality of semiconductor dies, each semiconductor die electrically connected to the first conductive trace and the second conductive trace, wherein each of the plurality of semiconductor dies forms a MOSFET, and the MOSFET includes a gate terminal, a drain terminal, and a source terminal; a common drain conductor electrically connected to each drain terminal of the plurality of semiconductor dies, wherein each of the plurality of semiconductor dies is disposed on the common drain conductor; and The AC electronic solid-state switch has an on state and an off state, wherein the AC electronic solid-state switch is configured to block between 650 volts and 1700 volts in a first direction and a second direction in the off state, the second direction being opposite to the first direction, and the AC electronic solid-state switch is configured to continuously carry at least 500A in the on state, wherein the voltage drop is less than 2V.

2. The AC electronic solid-state switch according to claim 1, further comprising a substrate, wherein: The electrically insulating and thermally conductive layer is disposed on the substrate, each drain terminal of the plurality of semiconductor dies is directly connected to the common drain conductor, wherein the common drain conductor is the only drain conductor, each of the plurality of semiconductor dies is in direct contact with the common drain conductor, and the plurality of semiconductor dies are electrically connected in parallel to each other.

3. The AC electronic solid-state switch according to claim 2, further comprising a plurality of signal conductors, wherein: The plurality of signal conductors are electrically connected to the plurality of semiconductor dies, and the plurality of signal conductors include a plurality of gate conductors and a plurality of source conductors.

4. The AC electronic solid-state switch according to claim 3, further comprising a plurality of electrical connectors, the plurality of electrical connectors comprising wire connectors and belt connectors, wherein: Each source terminal of the plurality of semiconductor dies is electrically connected to the plurality of source conductors, and the ribbon bond electrically connects the plurality of semiconductor dies to the plurality of source conductors.

5. The AC electronic solid-state switch according to claim 4, wherein: Each gate terminal of the plurality of semiconductor dies is electrically connected to the plurality of gate conductors, and the wire bonds electrically connect the plurality of semiconductor dies to the plurality of gate conductors.

6. The AC electronic solid-state switch according to claim 5, wherein: Each of the plurality of semiconductor dies has a minimum area of ​​20 square millimeters.

7. The AC electronic solid-state switch according to claim 6, wherein: The substrate has a thickness between 2 mm and 3 mm and comprises copper.

8. The AC electronic solid-state switch according to claim 7, wherein: The plurality of semiconductor dies includes between 8 and 24 semiconductor dies, each semiconductor die having a voltage rating between 650V and 1700V.

9. The AC electronic solid-state switch according to claim 8, wherein: The specific on-resistance of each semiconductor die is less than 4.5mΩ-cm 2 .

10. The AC electronic solid-state switch according to claim 9, wherein: The mass of the AC electronic solid-state switch is less than 300 grams.

11. An alternating current electronic solid-state switch, comprising: Electrical insulation and thermal conductivity layer; a first electrically conductive trace disposed on the electrically insulating and thermally conductive layer, wherein the first electrically conductive trace is a first drain conductor; a second electrically conductive trace disposed on the electrically insulating and thermally conductive layer, wherein the second electrically conductive trace is a second drain conductor; a plurality of semiconductor dies, each semiconductor die being electrically connected to the first conductive trace and the second conductive trace, wherein each of the plurality of semiconductor dies forms an electronically controllable switch, the plurality of semiconductor dies comprising a first group of semiconductor dies and a second group of semiconductor dies, the first group of semiconductor dies being disposed on the first conductive trace and the second group of semiconductor dies being disposed on the second conductive trace; a common source conductor electrically connected to each source terminal of the plurality of semiconductor dies, wherein each of the plurality of semiconductor dies is disposed on the common source conductor; and The AC electronic solid-state switch has an on state and an off state, wherein the AC electronic solid-state switch is configured to block between 650 volts and 1700 volts in a first direction and a second direction in the off state, the second direction being opposite to the first direction, and the AC electronic solid-state switch is configured to continuously carry at least 500A in the on state, wherein the voltage drop is less than 2V.

12. The AC electronic solid-state switch according to claim 11, further comprising a substrate, wherein: The electrically insulating and thermally conductive layer is disposed on the substrate, each source terminal of the plurality of semiconductor dies is directly connected to the common source conductor, wherein the common source conductor is the only source conductor, each of the first group of semiconductor dies is in direct contact with the first conductive trace, each of the second group of semiconductor dies is in direct contact with the second conductive trace, and each of the plurality of semiconductor dies is electrically connected in parallel to each other, the electronically controllable switch comprises a MOSFET and / or an IGBT, and the MOSFET comprises a gate terminal, a drain terminal and a source terminal.

13. The AC electronic solid-state switch of claim 12, further comprising a plurality of signal conductors, wherein: Each of the plurality of signal conductors is electrically connected to the plurality of semiconductor dies, and the plurality of signal conductors includes a plurality of gate conductors.

14. The AC electronic solid-state switch according to claim 13, further comprising a plurality of electrical coupling members, wherein: The plurality of electrical bonds include wire bonds and ribbon bonds, each source terminal of the plurality of semiconductor dies is electrically connected to the common source conductor, and the ribbon bonds electrically connect the plurality of semiconductor dies to the common source conductor.

15. The alternating current electronic solid-state switch of claim 14, wherein: Each gate terminal of the plurality of semiconductor dies is electrically connected to the plurality of gate conductors, and the wire bonds electrically connect the plurality of semiconductor dies to the plurality of gate conductors.

16. The alternating current electronic solid-state switch of claim 15, wherein: Each of the plurality of semiconductor dies has a minimum area of ​​20 square millimeters.

17. The AC electronic solid-state switch of claim 16, wherein: The thickness of the substrate is between 2 mm and 3 mm, and the substrate includes at least one selected from the group consisting of copper, aluminum, molybdenum, a copper alloy, an aluminum alloy, a molybdenum alloy, and a metal matrix composite material.

18. The alternating current electronic solid-state switch of claim 17, wherein: The plurality of semiconductor dies includes between 8 and 24 semiconductor dies, each semiconductor die having a voltage rating between 650V and 1700V.

19. The AC electronic solid-state switch of claim 18, wherein: The specific on-resistance of each semiconductor die is less than 4.5mΩ-cm 2 .

20. The alternating current electronic solid state switch of claim 19, wherein: The mass of the AC electronic solid-state switch is less than 300 grams.

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