Image Sensor

Abstract

An image sensor is disclosed. The image sensor may include: a pixel region including a first microlens array including microlenses arranged in a first direction and a second direction perpendicular to the first direction; and a shielding region configured to surround the pixel region and configured to include a second microlens array formed into a shape obtained when the first microlens array is rotated by a predetermined angle relative to the first direction.

Description

Technical Field

[0001] Technologies and implementations disclosed in this patent document generally relate to an image sensor that includes a microlens array. Background Art

[0002] Image sensors are used to capture light of optical images and convert them into electrical signals to display the captured images and further process the captured images. The development of various industries and fields including the automotive, medical, computer and communication industries has created various demands and growth for high-quality and high-performance image sensors in various devices and systems such as smartphones, digital cameras, game consoles, the Internet of Things (IoT), robots, surveillance cameras, medical miniature cameras, etc.

[0003] One common type of image sensing device is the charge coupled device (CCD), which has long dominated the field of image sensors. Another common type of image sensing device is the complementary metal oxide semiconductor (CMOS) image sensing device. CCD image sensors have advantages over CMOS image sensors in terms of noise characteristics and image quality. However, CMOS image sensors are now widely used due to some advantages over CCD image sensors, including, for example, higher frame rates and shutter speeds. In addition, CMOS image sensors and signal processing circuits can be integrated into a single chip, making it possible to miniaturize electronic devices while achieving lower power consumption. In addition, the use of CMOS manufacturing technology can reduce manufacturing costs. This characteristic of CMOS image sensors makes these sensors more suitable for implementation in mobile devices. Summary of the invention

[0004] Among other features and benefits, embodiments of the disclosed technology relate to an image sensor capable of reducing or minimizing noise in an image by preventing scattered light (or diffuse light) from affecting imaging pixels.

[0005] In an embodiment of the disclosed technology, an image sensor may include: a pixel area, which includes a first microlens array, the first microlens array including microlenses arranged in a first direction and a second direction perpendicular to the first direction; and an occlusion area, which is configured to surround the pixel area and is configured to include a second microlens array, the second microlens array being formed into a shape obtained when the first microlens array is rotated by a predetermined angle relative to the first direction.

[0006] In another embodiment of the disclosed technology, an image sensor may include: a first microlens array, which includes microlenses arranged in a first direction and a second direction perpendicular to the first direction corresponding to individual pixels; and a second microlens array, which surrounds the first microlens array and includes microlenses arranged in a third direction and a fourth direction perpendicular to the third direction with the same spacing as the microlenses arranged in the first microlens array, and the third direction is rotated by a predetermined angle relative to the first direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a block diagram illustrating an example of an image sensor based on some implementations of the disclosed technology.

[0008] Figure 2 Some examples of implementations based on the disclosed technology Figure 1 A schematic layout diagram of an example of an image sensor is shown.

[0009] Figure 3A is an example of some implementations based on the disclosed technology. Figure 2 A schematic diagram of an example of a first microlens array in an image sensor is shown.

[0010] Figure 3B is an example of some implementations based on the disclosed technology. Figure 2 A schematic diagram of another example of the first microlens array in the image sensor shown.

[0011] Figure 4A is an example of some implementations based on the disclosed technology. Figure 2 A schematic diagram of an example of a second microlens array in an image sensor shown.

[0012] Figure 4B is an example of some implementations based on the disclosed technology. Figure 2 FIG. 5 is a schematic diagram of another example of a second microlens array in an image sensor shown.

[0013] Figure 5 An example arrangement of a second microlens array obtained by rotating the axis of a first microlens array in a two-dimensional plane based on some implementations of the disclosed technology is shown.

[0014] Fig. 6A Various possible rotation angles of a plurality of second microlens arrays according to alignment of respective positions relative to adjacent first microlens arrays are shown based on some implementations of the disclosed technology.

[0015] Figure 6BInvariant (constant) rotation angles of the second microlens array according to various positions inside the image sensor based on some implementations of the disclosed technology are shown.

[0016] Figure 7 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of an example of an image sensor taken along line II′ is shown.

[0017] Fig. 8A is an example Figure 7 An enlarged view of the active pixel area of ​​the image sensor is shown, Figure 8B is an example Figure 7 A magnified view of the additional “dummy” pixel area of ​​the image sensor is shown. Figure 8C is an example Figure 7 A magnified view of a pixel occluded region of an image sensor is shown, and Fig.8D is an example Figure 7 A magnified view of the logically occluded area of ​​the image sensor is shown.

[0018] Fig. 9 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0019] Fig.10 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0020] Fig.11 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0021] Fig.12 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0022] Fig.13 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0023] Fig.14 is a schematic diagram illustrating an example of a camera system for illustrating backscattering of incident light based on some implementations of the disclosed technology.

[0024] Fig.15is a photographic image illustrating an example of an image captured by a camera system including a conventional image sensor.

[0025] Fig.16A is a graph illustrating that far-field intensity values ​​measured by a camera system including a conventional image sensor may vary according to backscattered light (BL) angles.

[0026] Fig. 16B is a graph illustrating far-field intensity values ​​that may vary according to backscattered light (BL) angles as measured by a camera system including any one of the image sensors based on some implementations of the disclosed technology.

[0027] Fig. 16C is an example of enlargement Fig.16A and Fig. 16B The glare phenomenon shown in Fig.15 The results of the far-field intensity value of the backscattered light (BL) with a specific angle as shown in FIG. Fig.16A The amplified far-field intensity value is Fig. 16B A graph showing the comparison results between the enlarged far-field intensity values.

[0028] Fig.17 are photographic images illustrating examples of images captured by a camera system including any one of the image sensors based on some implementations of the disclosed technology. DETAILED DESCRIPTION

[0029] This patent document provides implementations and examples of image sensors capable of reducing noise that occurs due to scattered light (or diffuse light). In some embodiments of the disclosed technology, the image sensor may include a peripheral microlens array rotated relative to an effective microlens array to reduce noise by minimizing glare that can be generated by backscattered light (BL) from the microlenses.

[0030] Reference will now be made in detail to embodiments of the disclosed technology, examples of which are shown in the accompanying drawings. The same reference numerals will be used throughout the accompanying drawings to refer to the same or similar parts as much as possible. Although the present disclosure is susceptible to various modifications and alternative forms, its specific embodiments are shown by way of example in the accompanying drawings. However, the present disclosure should not be construed as being limited to the embodiments set forth herein, but on the contrary, the present disclosure is intended to cover various modifications, equivalents and substitutions that fall within the spirit and scope of the embodiments. In the accompanying drawings, the size and shape of the elements may be exaggerated for convenience and clarity of description.

[0031] Figure 1 is a block diagram illustrating an example of an image sensor 100 based on some implementations of the disclosed technology.

[0032] In some implementations, image sensor 100 may include pixel array 110, correlated double sampler (CDS) circuit 120, analog-to-digital converter (ADC) circuit 130, buffer 140, row driver 150, timing generator 160, control register 170, and ramp signal generator 180.

[0033] The pixel array 110 may include a plurality of pixel blocks 115 arranged in a matrix shape. Each pixel block 115 may convert optical image information into an electrical image signal, and may output the electrical image signal through a column line to a correlated double sampler (CDS) circuit 120. Each pixel block 115 may be connected to any one of the row lines and any one of the column lines.

[0034] CMOS image sensors can use correlated double sampling (CDS) to remove undesired offset values ​​of pixels by sampling the pixel signal twice to remove the difference between the two samples. In one example, correlated double sampling (CDS) can remove undesired offset values ​​of pixels by comparing pixel output voltages obtained before and after a light signal is incident on the pixel, making it possible to measure a pixel output voltage based only on the incident light.

[0035] The correlated double sampler (CDS) circuit 120 may sample the electrical image signal received from the pixel block 115 of the pixel array 110. For example, the correlated double sampler (CDS) circuit 120 may perform sampling of a reference voltage level and a voltage level of the received electrical image signal in response to a clock signal received from the timing generator 160, and may transmit an analog signal corresponding to a difference between the reference voltage level and the voltage level of the received electrical image signal to the analog-to-digital converter (ADC) circuit 130.

[0036] The analog-to-digital converter (ADC) circuit 130 is used to convert the analog CDS signal into a digital signal. Examples of the analog-to-digital converter (ADC) circuit 130 may include a ramp comparison type analog-to-digital converter that compares the analog pixel signal with a reference signal such as a ramp signal that ramps up or down, and a timer that counts until the voltage of the ramp signal matches the analog pixel signal.

[0037] The analog-to-digital converter (ADC) circuit 130 may convert a received analog signal into a digital signal and may transmit the digital signal to the buffer 140 .

[0038] The buffer 140 may temporarily hold or "latch" the received digital signal to sequentially output the latched digital signal to an external image signal processor. The buffer 140 may include a memory for latching the digital signal and a sense amplifier for amplifying the digital signal.

[0039] The row driver 150 may be used to activate or drive the row lines in the pixel block 115 of the pixel array 110 in response to the output signal of the timing generator 160. For example, the row driver 150 may generate a selection signal to select any one of the row lines and / or may generate a driving signal to drive any one of the row lines.

[0040] The timing generator 160 may generate timing signals to control the correlated double sampler (CDS) circuit 120 , the analog-to-digital converter (ADC) circuit 130 , the row driver 150 , and the ramp signal generator 180 .

[0041] The control register 170 may generate control signals to control the buffer 140 , the timing generator 160 , and the ramp signal generator 180 .

[0042] The ramp signal generator 180 may generate a ramp signal for allowing the ADC circuit 130 to perform analog-to-digital conversion (ADC) in response to a control signal received from the timing generator 160 .

[0043] Figure 2 Some examples of implementations based on the disclosed technology Figure 1 A schematic layout diagram of an example of an image sensor 100 is shown.

[0044] Reference Figure 2 , the image sensor 100 may include a pixel region 10 and an occlusion region 50 .

[0045] The pixel area 10 may include an effective pixel area 20 and an additional "dummy" pixel area 30. Here, the effective pixel area 20 may include effective pixels, which are pixels that capture images to convert them into image data. The additional "dummy" pixel area 30 may include "dummy pixels", which are peripheral pixels used for other sensing operations and whose output signals are not directly used to form a part of the output image. In some implementations, the output signals from the peripheral pixels can be used to compensate for errors caused by electrical interference or optical interference between different imaging pixels. The effective pixel area 20 can be formed in a rectangular shape and can be located in the center of the image sensor 100. The dummy pixel area 30 can be formed in a rectangular frame shape surrounding the effective pixel area 20.

[0046] The shielding area 50 may include at least one pixel shielding area 50A and at least one logic shielding area 50B. The pixel shielding area 50A may be arranged in a rectangular frame shape surrounding the peripheral area of ​​the pixel area 10. The logic shielding area 50B may be spaced a predetermined distance from the pixel area 10 and arranged to surround the pixel area 10 and the pixel shielding area 50A. For example, the logic shielding area 50B may be arranged in or above the pixel shielding area 50A. The logic shielding area 50B may be arranged in a strip shape or an island shape adjacent to the side and / or corner of the pixel shielding area 50A. The horizontal or vertical length of each logic shielding area 50B may be equal to or less than the horizontal width or vertical width of the dummy pixel area 30.

[0047] In some implementations, the logical occlusion region 50B may be optionally arranged. For example, the logical occlusion region 50B may be arranged in at least one of the four sides of the pixel occlusion region 50A, and / or may be arranged in at least two of the four corners of the pixel occlusion region 50A.

[0048] Figure 3A is an example of some implementations based on the disclosed technology. Figure 2 FIG. 1 is a schematic diagram of an example of a first microlens array ( ML1 ) in the image sensor 100 shown.

[0049] Reference Figure 3A , the first microlens array (ML1) may refer to a microlens array arranged in the image sensor 100, and the first microlens array (ML1) may be arranged in the effective pixel area 20. In some embodiments of the disclosed technology, the microlens array (ML1) may be arranged in at least a portion of the dummy pixel area 30.

[0050] The first microlens array (ML1) may include a plurality of microlenses 300 arranged in rows and columns in the X-axis or Y-axis direction. The microlenses 300 may be formed according to the same specifications (e.g., shape, width, thickness, curvature, diameter, volume). In some implementations, the X-axis direction may refer to the row direction of the pixel array 110, and the Y-axis direction may refer to the column direction of the pixel array 110. A cross-sectional view of the first microlens array (ML1) taken along a line AA′ parallel to the X-axis direction is illustrated in FIG. Figure 3Ato the right of . That is, the microlenses 300 arranged in the first microlens array (ML1) can be repeatedly arranged side by side. In some implementations, the first microlens array (ML1) can include a set of first iterative (or periodic) units, such that each first iterative unit includes one microlens. Each first iterative unit has a first width (P1). For example, the horizontal width (e.g., diameter) of each microlens 300 can be substantially the same as the first width (P1) of each first iterative unit. Here, the first width can also be referred to as a "pitch".

[0051] In addition, each microlens 300 can be used to focus and converge light as will be described below. Figure 7 The arrangement is on a corresponding light sensing device (eg, a photodiode) below each microlens 300 .

[0052] exist Figure 3A , an example of light is illustrated in FIG. Incident light (IL) refers to light incident on the first microlens array (ML1); reflected light (RL) refers to light reflected by the microlens 300, and backscattered light (BL) refers to light reflected by the microlens in a direction that is a small angle to the direction of the incident light IL. In one example, reflected light (RL) may refer to light reflected in a direction different from the source of the incident light (IL), and backscattered light (BL) may refer to light reflected in a direction opposite or almost opposite to the incident direction of the incident light (IL).

[0053] Figure 3B is an example of some implementations based on the disclosed technology. Figure 2 A schematic diagram of another example of the first microlens array in the image sensor shown.

[0054] Reference Figure 3B , the first microlens array (ML1′) may refer to a microlens array disposed in the image sensor 100, and may be disposed in the effective pixel region 20. In some embodiments of the disclosed technology, the first microlens array (ML1′) may be disposed in at least a portion of the dummy pixel region 30.

[0055] Figure 3B The first microlens array (ML1′) shown may include a plurality of microlenses 300′ arranged in rows and columns in the X-axis or Y-axis direction. Each microlens 300′ may be formed in a rectangular shape with each corner being curved (or rounded), rather than Figure 3A The microlenses 300 are shown to be circular in shape.

[0056] Figure 3B The remaining components except the shape of the microlens 300' in the first microlens array (ML1') are the same as those shown in FIG. Figure 3A The first microlens array (ML1) shown is identical or similar in structure and material.

[0057] Figure 4A is an example of some implementations based on the disclosed technology. Figure 2 FIG. 1 is a schematic diagram of an example of a second microlens array ( ML2 ) in the image sensor 100 shown.

[0058] Reference Figure 4A , the second microlens array (ML2) may refer to a microlens array arranged in the image sensor 100, and may be arranged in at least one of the peripheral "dummy" pixel region 30, the pixel shielding region 50A, and the logical shielding region 50B. That is, the second microlens array (ML2) may be arranged along the edge of the effective pixel region 20.

[0059] Similar to the first microlens array (ML1), the second microlens array (ML2) may include a plurality of microlenses 400 arranged in rows and columns. However, compared to the first microlens array (ML1), the second microlens array (ML2) is rotated by a predetermined rotation angle (θ) around the center (or Z-axis) of the array. For example, the second microlens array (ML2) may be implemented by rotating the first microlens array (ML1) by a predetermined rotation angle (θ).

[0060] In other words, a plurality of microlenses 300 may be arranged in a first microlens array (ML1) along a first direction (e.g., a column direction) or a second direction (e.g., a row direction) perpendicular to the first direction, and a second microlens array (ML2) may be implemented by rotating the first microlens array (ML1) by a predetermined angle (θ) relative to the first direction.

[0061] The microlenses 400 may be formed with the same specifications (eg, shape, width, thickness, curvature, diameter, volume). Figure 3A The microlenses 300 shown are formed with the same specifications as Figure 4A Microlens 400 is shown.

[0062] A cross-sectional view of the second microlens array (ML2) taken along a line BB′ parallel to the X-axis is shown in FIG. Figure 4A on the right side. Figure 4A The cutting line BB′ and Figure 3AThe cutting lines AA′ can be arranged in the same direction (for example, the first direction). In this case, the first direction may refer to the X-axis or Y-axis direction. That is, the microlenses 400 arranged in the second microlens array (ML2) can be repeatedly arranged so that the second iterative unit is repeated and has a second width (P2). Since the second microlens array is rotated relative to the first microlens array, the second width (P2) is greater than the first width (P1), and thus, the microlenses in the second microlens array are arranged at a larger spacing in the arrangement direction of the microlenses in the first microlens array than the microlenses in the first microlens array. In other words, the microlenses in the second microlens array arranged in the first direction are spaced farther apart than the microlenses in the first microlens array arranged in the first direction. As Figure 4A As shown, the microlenses 400 used only in one second width (P2) may have different heights, different widths, and different areas, and the microlenses 400 adjacent to each other may be arranged at intervals of different distances.

[0063] In some implementations, the second width (P2) can be longer than the first width (P1).

[0064] Incident light (IL) refers to light incident on the second microlens array (ML2), reflected light (RL) refers to light reflected by the microlens 400, and backscattered light (BL) refers to light reflected by the microlens 400 at a smaller phase angle.

[0065] The backscattered light (BL) generated by the second microlens array (ML2) may cause a flare phenomenon, through which the camera system (CS) including the image sensor 100 (see Fig.14 ) generates noise.

[0066] The degree of the glare phenomenon caused by the backscattered light (BL) can be closely related to the second width (P2) of the second iterative unit, and the microlens 400 is repeated in the second microlens array (ML2) according to the second iterative unit. As described above, the image sensor 100 may include a second microlens array (ML2) that is rotated by a predetermined rotation angle (θ) around the arrangement axis of the microlenses in the effective pixel area 20. Due to the increase in the width of the second iterative unit in the second microlens array (ML2), the glare phenomenon caused by the backscattered light (BL) can be significantly reduced. As will be discussed below (see Fig.14 ), the increased width of the second iteration unit leads to an increased spacing between adjacent iteration microlenses in a certain direction, thereby reducing the glare phenomenon caused by backscattered light (BL). Adjacent iteration microlenses may have substantially the same height as each other.

[0067] Figure 4B is an example of some implementations based on the disclosed technology. Figure 2 FIG. 5 is a schematic diagram of another example of a second microlens array in an image sensor shown.

[0068] Reference Figure 4B , the second microlens array (ML2′) may refer to a microlens array arranged in the image sensor 100, and the second microlens array (ML2′) may be arranged in at least one of the dummy pixel region 30, the pixel shielding region 50A, and the logical shielding region 50B. That is, the second microlens array (ML2′) may be arranged in an edge region relative to the effective pixel region 20.

[0069] The second microlens array (ML2′) may include a plurality of microlenses 400′, each of which is implemented when the first microlens array (ML1′) is rotated by a predetermined rotation angle (θ) based on the center point of any microlens 300′ or an axis (e.g., Z axis) perpendicular to the plane between the X-axis and the Y-axis (or the first microlens array ML1′). In other words, the second microlens array (ML2′) may be implemented by rotating the first microlens array (ML1′) by a predetermined rotation angle (θ).

[0070] In other words, a plurality of microlenses 300′ may be arranged in a first direction (e.g., a column direction) or in a second direction (e.g., a row direction) perpendicular to the first direction in a first microlens array (ML1′), and a second microlens array (ML2′) may be realized by rotating the first microlens array (ML1′) by a predetermined angle (θ) relative to the first direction.

[0071] Each microlens 400' may have a different Figure 4A The illustrated rounded manner of the microlens 400 is formed in a rectangular shape in which each corner is curved (or rounded).

[0072] The microlenses 400' may be formed in the same specifications (eg, shape, width, thickness, curvature, diameter, volume). According to this embodiment of the disclosed technology, Figure 4B The microlens 400' shown in FIG. Figure 3B The microlenses 300' shown are formed with the same specifications.

[0073] Although the present embodiment of the disclosed technology has exemplarily disclosed that each microlens is formed in a circular or rectangular shape for ease of description, the scope or spirit of the microlens is not limited thereto, and each microlens may be formed in any shape as needed.

[0074] In addition, Figure 4BThe right side of exemplifies a cross-sectional view of the second microlens array (ML2′) taken along line BB′ parallel to the X-axis. Figure 4B The cutting line BB′ and Figure 3B The cutting line AA′ may refer to the same direction (eg, the first direction). In this case, the first direction may refer to the X-axis or Y-axis direction. That is, the microlenses 400′ arranged in the second microlens array (ML2′) may be repeatedly arranged at intervals of the second width (P2). Figure 4B As shown, the microlenses 400 used only in one second width (P2) may have different heights, different widths, and different areas, and the microlenses 400 adjacent to each other may be arranged at intervals of different distances.

[0075] In addition, the second width (P2) may be longer than the first width (P1).

[0076] Incident light (IL) refers to light incident on the second microlens array (ML2'), reflected light (RL) refers to light reflected by the microlens 400', and backscattered light (BL) refers to light reflected by the microlens 400'.

[0077] The backscattered light (BL) generated by the second microlens array (ML2′) may cause a glare phenomenon, through which the camera system (CS) including the image sensor 100 (see Fig.14 ) generates noise.

[0078] The degree of the glare phenomenon caused by the backscattered light (BL) can be closely related to the second width (P2), and the microlens 400' is repeated in the second microlens array (ML2') according to the second width (P2). As described above, the image sensor 100 may include a second microlens array (ML2') obtained when the first microlens array (ML1') is rotated by a predetermined rotation angle (θ) near the edge portion based on the effective pixel area 20. Since the width of the second microlens array (ML2') is increased, the glare phenomenon caused by the backscattered light (BL) can be significantly reduced. Fig.14 The following drawings describe the reason why the glare phenomenon caused by the backscattered light (BL) is reduced by increasing the width of the second microlens array (ML2').

[0079] As described above, the second microlens array (ML2′) can be implemented by rotating the first microlens array (ML1′) by a predetermined rotation angle (θ) so that each second iteration unit in the second microlens array (ML2′) can have a second width (P2) in the first direction, and the second width (P2) is longer than the first width (P1) of each first iteration unit in the first microlens array (ML1′). If the first microlens array (ML1′) is not rotated by the predetermined angle (θ) and each microlens 300′ is rotated around its center point, the second microlens array has a first width (P1) in the first direction instead of the second width (P2), so that the glare phenomenon is not reduced in the same way as the second microlens array (ML2′).

[0080] Figure 5 An example arrangement of a second microlens array obtained by rotating the axis of a first microlens array on a two-dimensional plane based on some implementations of the disclosed technology is illustrated.

[0081] like Figure 5 As shown, the first microlens array (ML1) can be sequentially rotated by a rotation angle ranging from 0° to 90°, so that the second microlens array (ML2) can be constructed, and a detailed description thereof will be given below with reference to the accompanying drawings. Although for convenience, Figure 5 See the following drawings Figure 3A The first microlens array (ML1) and Figure 4A The second microlens array (ML2) of FIG. 1 illustrates various embodiments, but the scope of the disclosed technology is not limited thereto, and the same technical idea or concept can also be applied not only to Figure 3B The first microlens array (ML1′) is applied to Figure 4B A second microlens array (ML2′) is provided.

[0082] By comparing the second microlens array (ML2) rotated by a rotation angle of 20° with another second microlens array (ML2) rotated by a rotation angle of 70°, it can be seen that the two second microlens arrays (ML2) are symmetrical to each other about an arbitrary straight line passing through the center point of the second microlens array (ML2). That is, the two second microlens arrays (ML2) can have the same second width (P2) in the direction of the incident light (or the cutting line).

[0083] Therefore, it can be recognized that the second microlens array (ML2) rotated by a rotation angle of 20° is optically equivalent to another second microlens array (ML2) rotated by a rotation angle of 70° (or equivalent with the same width). That is, it can be seen that the range of the rotation angle (θ) of the second microlens array (ML2) is 0° to 45°.

[0084] Fig. 6A Various possible rotation angles of a plurality of second microlens arrays according to their alignment relative to respective positions of adjacent first microlens arrays are shown.

[0085] Reference Fig. 6A , the second microlens array (ML2-1) may be arranged on the upper left side of the effective pixel area 20, the second microlens array (ML2-2) may be arranged on the upper side of the effective pixel area 20, the second microlens array (ML2-3) may be arranged on the upper right side of the effective pixel area 20, the second microlens array (ML2-4) may be arranged on the right side of the effective pixel area 20, the second microlens array (ML2-5) may be arranged on the lower right side of the effective pixel area 20, the second microlens array (ML2-6) may be arranged on the lower side of the effective pixel area 20, the second microlens array (ML2-7) may be arranged on the lower left side of the effective pixel area 20, and the second microlens array (ML2-8) may be arranged on the left side of the effective pixel area 20. The plurality of second microlens arrays ML2-1 to ML2-8 may have the same rotation angle, and at least two of the second microlens arrays ML2-1 to ML2-8 may have different rotation angles.

[0086] not only Fig. 6A Any position of the second microlens arrays ML2 - 1 to ML2 - 8 shown in FIG. 2 and located outside the effective pixel area 20 may be defined as a first position, and other positions adjacent to the first position may be defined as a second position.

[0087] If the rotation angle of any second microlens array (e.g., ML2-1) is different from the rotation angle of other second microlens arrays (e.g., ML2-2) adjacent to the arbitrary second microlens array (e.g., ML2-1), the rotation angle of the second microlens array may gradually change inversely proportional to the distance from the second microlens array (e.g., ML2-1) to the other second microlens arrays (e.g., ML2-2). Alternatively, there may be a blank space of a predetermined size in the boundary between any second microlens array (e.g., ML2-1) and other second microlens arrays (e.g., ML2-2) adjacent to the second microlens array (e.g., ML2-1).

[0088] The rotation angle of the second microlens array ML2-1 to ML2-8 can be determined through experiments considering the incident angle of the main light component that causes the glare phenomenon among the main light rays M-1 to M-8 passing through the lens module, the shape of the camera system (CS) including the image sensor 100, and the shape of the second microlens array to minimize the glare phenomenon.

[0089] Just as an example, Fig. 6AEight second microlens arrays ML2 - 1 to ML2 - 8 are shown in FIG. 1 , and each second microlens array arranged in the image sensor 100 may be divided into a plurality of parts.

[0090] Figure 6B An invariant (constant) rotation angle of the second microlens array according to various positions inside the image sensor is shown.

[0091] Reference Figure 6B , the second microlens array (ML2-1′) may be arranged on the upper left side of the effective pixel area 20, the second microlens array (ML2-2′) may be arranged on the upper side of the effective pixel area 20, the second microlens array (ML2-3′) may be arranged on the upper right side of the effective pixel area 20, the second microlens array (ML2-4′) may be arranged on the right side of the effective pixel area 20, the second microlens array (ML2-5′) may be arranged on the lower right side of the effective pixel area 20, the second microlens array (ML2-6′) may be arranged on the lower side of the effective pixel area 20, the second microlens array (ML2-7′) may be arranged on the lower left side of the effective pixel area 20, and the second microlens array (ML2-8′) may be arranged on the left side of the effective pixel area 20. The plurality of second microlens arrays ML2-1′ to ML2-8′ may be arranged in a manner similar to that of the second microlens arrays ML2-1′ to ML2-8′. Fig. 6A Different ways with the same rotation angle.

[0092] The rotation angle of the second microlens array ML2-1′ to ML2-8′ can be determined through experiments considering the incident angle of the main light component that causes the glare phenomenon among the main light rays M-1 to M-8 passing through the lens module, the shape of the camera system (CS) including the image sensor 100, and the shape of the second microlens array to minimize the glare phenomenon.

[0093] Figure 7 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of one example of an image sensor taken along line II′ is shown. Fig. 8A is an example Figure 7 An enlarged view of the active pixel area of ​​the image sensor is shown, Figure 8B is an example Figure 7 An enlarged view of a virtual pixel area of ​​an image sensor is shown, Figure 8C is an example Figure 7 A magnified view of a pixel occluded region of an image sensor is shown, and Fig.8D is an example Figure 7 A magnified view of the logically occluded area of ​​the image sensor is shown.

[0094] Reference Figure 7 and Fig. 8AThe image sensor 100A may include a pixel region 10 including an effective pixel region 20 and an additional “dummy” pixel region 30 , and the image sensor 100A may also include an occlusion region 50 including a pixel occlusion region 50A and a logical occlusion region 50B.

[0095] Reference Fig. 8A The effective pixel area 20 of the image sensor 100A may include an effective photodiode 21 formed in the substrate 5, an effective grid pattern 22 formed above the substrate 5, an effective color filter 25 formed above the substrate 5, an effective over-coating layer 26 formed on the effective color filter 25, and an effective microlens 27 formed on the effective over-coating layer 26.

[0096] Reference Figure 7 and Figure 8B The dummy pixel region 30 of the image sensor 100A may include a dummy photodiode 31 formed in the substrate 5, a dummy grid pattern 32 formed above the substrate 5, a dummy color filter 35 formed above the substrate 5, a dummy outer coating 36 formed above the dummy color filter 35, and a dummy microlens 37 formed above the dummy outer coating 36.

[0097] Reference Figure 7 , Figure 8C and Fig.8D , the pixel blocking region 50A of the image sensor 100A may include a peripheral photodiode 51 formed in the substrate 5, a blocking layer 52 formed above the substrate 5, a peripheral color filter 55, a peripheral outer coating 56, and a peripheral microlens 57. The logical blocking region 50B may include a blocking layer 52 formed above the substrate 5, a peripheral color filter 55, a peripheral outer coating 56, and a peripheral microlens 57. The logical blocking region 50B may also include an upper color filter 58 covering the peripheral color filter 55. In addition, the logical blocking region 50B may not include a peripheral photodiode arranged in the pixel blocking region 50A. In other words, the peripheral photodiode 55 may be formed only in the pixel blocking region 50A, and may not be formed in the logical blocking region 50B.

[0098] The substrate 5 may include a single crystal silicon layer or an epitaxially grown silicon layer. An insulating layer 70 including various transistors (not shown) and metal lines (not shown) may be formed under the substrate 50. The insulating layer 70 may include an insulating material, for example, a silicon oxide material or a silicon nitride material.

[0099] The effective photodiode 21, the dummy photodiode 31, and the peripheral photodiode 51 may include an N-type ion doped region having phosphorus (P) ions or arsenic (As) ions. According to another embodiment, the effective photodiode 21, the dummy photodiode 31, and the peripheral diode 51 may include a P-type ion doped region having boron (B) ions.

[0100] When viewed from the top, the effective grid pattern 22 may be formed in a lattice-like mesh shape, and when viewed from the top, the dummy grid pattern 32 may be formed in a lattice-like mesh shape. Each effective grid pattern 22 may include a lower effective grid pattern 23 and an upper effective grid pattern 24, and each dummy grid pattern 32 may include a lower dummy grid pattern 33 and an upper dummy grid pattern 34.

[0101] The shielding layer 52 may be formed in a flat plate or plate shape. The shielding layer 52 may include a lower shielding layer 53 and an upper shielding layer 52. The lower effective grid pattern 23, the lower dummy grid pattern 33, and the lower shielding layer 53 may include an insulating material, for example, a silicon oxide material, a silicon oxynitride material, and / or a silicon nitride material. The upper effective grid pattern 24, the upper dummy grid pattern 34, and the upper shielding layer 52 may include a metal material such as tungsten (W).

[0102] The effective color filter 25 may be formed to fill the space between the effective grid patterns 22. The dummy color filter 35 may be formed to fill the space between the dummy grid patterns 32. The peripheral color filter 55 and the upper color filter 58 may be formed above the shielding layer 52. The peripheral color filter 55 may be formed above the shielding layer 52 so that the peripheral color filter 55 may be located at a higher level than the effective color filter 25 and the dummy color filter 35. The effective color filter 25, the dummy color filter 35, and the peripheral color filter 55 may include a red filter, a green filter, and a blue filter, respectively. In the logical shielding area 50B, the peripheral color filter 55 may include a red filter and a green filter, and the upper color filter 58 may include a blue filter. The effective color filter 25, the dummy color filter 35, and the peripheral color filter 55 having the same color may have substantially the same or similar vertical thickness. The effective color filters 25, the dummy color filters 35, and the peripheral color filters 55 having different colors may have different vertical thicknesses. The vertical thickness of the upper color filter 58 may be greater than the vertical thickness of each peripheral color filter 55. Therefore, the upper color filter 58 may be formed to cover the peripheral color filter 55 within the logical shielding area 50B.

[0103] The effective outer coating 26 may be formed above the effective color filter 25, the dummy outer coating 36 may be formed above the dummy color filter 35, and the peripheral outer coating 56 may be formed above the peripheral color filter 55 and the upper color filter 58. Each of the effective outer coating 26, the dummy outer coating 36, and the peripheral outer coating 56 may have a planar top surface. Since the thickness of the upper color filter 58 arranged in the logical shielding area 50B is greater than the thickness of the peripheral color filter 55, the peripheral outer coating 56 arranged in the logical shielding area 50B may be formed at a higher level than the peripheral outer coating 56 arranged in the pixel shielding area 50A. Each of the effective outer coating 26, the dummy outer coating 36, and the peripheral outer coating 56 may include a polymer material.

[0104] The effective microlens 27 may be formed over the effective outer coating 26. The dummy microlens 37 may be formed over the dummy microlens 37. The peripheral microlens 57 may be formed over the peripheral outer coating 56. The effective microlens 27 may be formed of the same material as that of the effective outer coating 26, the dummy microlens 37 may be formed of the same material as that of the dummy outer coating 36, and the peripheral microlens 57 may also be formed of the same material as that of the peripheral outer coating 56.

[0105] Reference Fig. 8A , in the effective pixel area 20, the effective microlenses 27 can be repeatedly arranged side by side. In some implementations, the effective pixel area 20 can include a set of iterative units, so that each iterative unit includes a microlens. Each iterative unit has a first width (P1). For example, the horizontal width (e.g., diameter) of each microlens 27 can be substantially the same as the first width (P1). In other words, the effective microlenses 27 can be repeatedly arranged side by side at intervals of the first width (P1) within the effective pixel area 20.

[0106] Reference Figure 8B, in the dummy pixel area 30, the dummy microlenses 37 may be repeatedly arranged side by side at intervals of the first width (P1). For example, in the dummy pixel area 30A arranged to be located near the effective pixel area 20 in the dummy pixel area 30, the dummy microlenses 37 may be arranged at intervals of the first width (P1) in the same manner as the effective microlenses 27. In addition, in the dummy pixel area 30B located outside the dummy pixel area 30 near the shielding area 50, the dummy microlenses 37 may be repeatedly arranged at intervals of a second width (P2) different from the first width (P1). In other words, in the dummy pixel area 30, the dummy microlenses 37 may be repeatedly arranged at intervals of the second width (P2). For ease of description, the second width (P2) may be at least three times longer than the first width (P1). In more detail, assuming that the first width (P1) is set to 1 μm, the second width (P2) may be set to 3 μm or more. According to the relative concept of the disclosed technology, the inner dummy pixel region 30A can be positioned relatively closer to the effective pixel region 20, the outer dummy pixel region 30B can be positioned relatively closer to the occlusion region 50, and the boundary between the inner dummy pixel region 30A and the outer dummy pixel region 30B can be randomly determined.

[0107] Reference Figure 8C and Fig.8D , in each of the pixel blocking area 50A and the logic blocking area 50B, the peripheral micro lenses 57 may be repeatedly arranged at intervals of the second width (P2).

[0108] In summary, the effective microlenses 27 may be repeatedly arranged at intervals of the first width (P1) in the effective pixel region 20 of the pixel region 10, and the dummy microlenses 37 may be repeatedly arranged at intervals of the first width (P1) in the inner dummy pixel region 30A. In other words, the effective microlenses 27 arranged in the effective pixel region 20 and the dummy microlenses 37 arranged in the inner dummy pixel region 30A may correspond to the first microlens array (ML1).

[0109] In each of the outer dummy pixel region 30A of the pixel region 10 and the pixel blocking region 50A and the logical blocking region 50B of the blocking region 50, the dummy microlenses 37 and the peripheral microlenses 57 may be repeatedly arranged at intervals of the second width (P2). That is, the dummy microlenses 37 arranged in the outer dummy pixel region 30A and the peripheral microlenses 57 arranged in the pixel blocking region 50A and the logical blocking region 50B may correspond to the second microlens array (ML2).

[0110] The effective microlenses 27 , the dummy microlenses 37 , and the peripheral microlenses 57 may be formed in the same specifications (eg, shape, width, thickness, curvature, diameter, volume).

[0111] According to an example of the disclosed technology, the virtual microlenses 37 located at the same main light rays M-1 to M-8 can have different rotation angles, and the peripheral microlenses 57 located at the same main light rays M-1 to M-8 can also have different rotation angles, thereby minimizing the glare phenomenon.

[0112] Fig. 9 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0113] Reference Fig. 9 According to another embodiment of the disclosed technology, an image sensor 100B may include a pixel region 10 and a blocking region 50. The pixel region 10 may include an effective pixel region 20 provided with an effective photodiode 21 and a dummy pixel region 30 provided with a dummy photodiode 31. The blocking region 50 may include a pixel blocking region 50A and a logical blocking region 50B. Figure 7 Compared with the image sensor 100A shown in FIG. Fig. 9 The occlusion area 50 shown is omitted Figure 7 In addition, according to another embodiment of the disclosed technology, the dummy photodiode 31 may be partially formed in the dummy pixel region 30 of the image sensor 100B or omitted from the dummy pixel region 30 of the image sensor 100B. Figure 8B In contrast, the dummy photodiode 31 may be formed in the inner dummy pixel region 30A located near the effective pixel region 20 , and the dummy photodiode 31 may be omitted from the outer dummy pixel region 30B located near the shielding region 50 .

[0114] Fig.10 is an example along the Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0115] Reference Fig.10 , an image sensor 100C according to another embodiment of the disclosed technology may include a pixel region 10, a pixel blocking region 50A, and a logical blocking region 50B. The pixel region 10 may include an effective pixel region 20 provided with an effective color filter 25 and a dummy pixel region 30 provided with a dummy color filter 35. The pixel blocking region 50A may include a peripheral color filter 55. The logical blocking region 50B may include an upper color filter 58. Figure 7 Compared to the image sensor 100A shown in FIG. Figure 7 The peripheral color filter 55 shown in FIG. 5 may not be formed in the logical shielding area 50B, but may be omitted from the logical shielding area 50B, as shown in FIG. Fig.10 That is, only the upper color filter 58 may be formed in the logic shielding area 50B.

[0116] Fig.11 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0117] Reference Fig.11 , an image sensor 100D according to another embodiment of the disclosed technology may include a pixel region 10, a pixel shielding region 50A not provided with a peripheral color filter 55, and a logical shielding region 50B. In this case, the pixel region 10 may include an effective pixel region 20 provided with an effective color filter 25 and a dummy pixel region 30 provided with a dummy color filter 35. Figure 7 Compared to the image sensor 100A shown in FIG. Figure 7 The peripheral color filter 55 shown in the figure may not be formed in the pixel shielding area 50A and the logic shielding area 50B, but may be omitted from the pixel shielding area 50A and the logic shielding area 50B. The upper color filter 58 may be formed in the logic shielding area 50B. That is, in the pixel shielding area 50A, the peripheral outer coating 56 may be formed directly above the shielding layer 52, and in the logic shielding area 50B, the upper color filter 58 may be formed above the shielding layer 52 and the peripheral outer coating 56 may be formed above the upper color filter 58.

[0118] Fig.12 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0119] Reference Fig.12 , an image sensor 100E according to another embodiment of the disclosed technology may include a pixel region 10 and a shielding region 50. The pixel region 10 may include an effective pixel region 20 and a dummy pixel region 30. The shielding region 50 may include a pixel shielding region 50A and a logic shielding region 50B, each of which has an overcoat layer 56 formed directly above a shielding layer 52. Figure 7 Compared to the image sensor 100A shown in , the peripheral color filter 55 and the upper color filter 58 may not be formed in the pixel blocking area 50A and the logic blocking area 50B, and may be omitted from the pixel blocking area 50A and the logic blocking area 50B.

[0120] Fig.13 is an example of some implementations based on the disclosed technology. Figure 2 A cross-sectional view of another example of the image sensor taken along line II′ is shown.

[0121] Reference Fig.13 , an image sensor 100F according to another embodiment of the disclosed technology may include a pixel region 10 and a blocking region 50. The pixel region 10 may include an effective pixel region 20 provided with an effective photodiode 21 and a dummy pixel region 30 provided with a dummy photodiode 31. The blocking region 50 may include a pixel blocking region 50A and a logical blocking region 50B each including a peripheral microlens 57. Figure 7 Compared to the image sensor 100A shown in FIG. 1 , in the dummy pixel region 30, the dummy microlenses 37 may be repeatedly arranged at intervals of the first width (P1) without the need for Fig.13 A distinction is shown between an inner dummy pixel region 30A and an outer dummy pixel region 30B.

[0122] Fig.14 is a schematic diagram illustrating an example of a camera system (CS) for accounting for backscattering of incident light (IL) based on some implementations of the disclosed technology.

[0123] Reference Fig.14 , the camera system (CS) may include a housing (H), a lens module (LM), an infrared filter (IR) and an image sensor (IS). The lens module (LM), the infrared filter (IR) and the image sensor (IS) may be arranged in the housing (H). The infrared filter (IR) may filter out infrared light, and the lens module (LM) may include a plurality of optical lenses (OL). For example, among the multiple lights incident on the lens module (LM) of the camera system (CS) from any one of the light source (L) and the target object, the light irradiated on the first peripheral area (PA1) of the image sensor (IS) may be backscattered from the microlens (ML), may be reflected from the optical lens of the lens module (LM), and may be reflected again so that the resulting light may be radiated onto the second peripheral area (PA2) of the image sensor (IS). The first peripheral area (PA1) and the second peripheral area (PA2) may be located near the corners facing each other in the diagonal direction from the image sensor (IS).

[0124] Fig.15 is a photographic image illustrating an example of an image captured by a camera system (CS) including a conventional image sensor.

[0125] Reference Fig.14 and Fig.15, light incident on the first peripheral area (PA1) may be backscattered to the optical lens (OL) of the lens module (LM), and then may be incident on the second peripheral area (PA2) again. Therefore, a glare phenomenon may occur in the second peripheral area (PA2). The glare phenomenon (F) has been measured as the most dominant component of the backscattered light (BL) having a specific angle.

[0126] Fig.16A is a graph illustrating that far-field intensity values ​​measured by a camera system (CS) including a conventional image sensor may vary according to a backscattered light (BL) angle. Fig. 16B is a graph illustrating far-field intensity values ​​that may vary according to the backscattered light (BL) angle measured by the camera system (CS) including any one of the image sensors 100A to 100F. Fig. 16C is an example of enlargement Fig.16A and Fig. 16B The glare phenomenon shown in Fig.15 The results of the far-field intensity value of the backscattered light (BL) with a specific angle as shown in FIG. Fig.16A The amplified far-field intensity value is Fig. 16B A graph showing the comparison results between the enlarged far-field intensity values.

[0127] exist FIG. 16A to FIG. 16C In the graph shown, the X-axis value may refer to the angle of backscattered light (BL), and the Y-axis value may refer to the square of the far-field intensity value (E 2 ).

[0128] Reference Fig.16A The camera system (CS) shown includes a conventional image sensor, and it can be recognized that backscattered light (BL) having an angle of about (-)27°, backscattered light (BL) having an angle of about (+)2°, and backscattered light (BL) having an angle of about (+)31.5° have been generated. Specifically, area (A) may refer to the area causing Fig.15 The backscattered light (BL) of the glare phenomenon (F) is obtained, and the angle of the area (A) may correspond to the incident angle of the main component causing the glare phenomenon (F).

[0129] Reference Fig. 16B In the camera system (CS) including any one of the image sensors 100A to 100F according to various embodiments of the disclosed technology, it can be recognized that a plurality of backscattered lights have been generated at various angles. Specifically, as can be seen from the area (B), it can be recognized that the backscattered lights caused Fig.15 The far-field intensity values ​​of the backscattered light (BL) and the glare phenomenon (F) have been significantly reduced.

[0130] Reference Fig. 16C,and Fig.16A Compared with the far-field intensity value of the backscattered light (BL) of the area (A) measured by the camera system (CS) including the conventional image sensor shown in FIG. 1 , it can be appreciated that the far-field intensity value of the backscattered light (BL) of the area (B) measured by the camera system (CS) including any one of the image sensors 100A to 100F has been significantly reduced, as shown in FIG. Fig. 16C shown.

[0131] Therefore, in a camera system (CS) including any one of the image sensors 100A to 100F according to various embodiments of the disclosed technology, Fig.15 The glare phenomenon (F) shown in can be greatly reduced, so that the glare phenomenon (F) can disappear or be ignored. Fig. 16B In the embodiment, the remaining backscattered light (BL) except the backscattered light (BL) of the region (B) may not cause the glare phenomenon (F) at all, so that the remaining backscattered light (BL) is negligible.

[0132] Since the second width (P2) of the second iteration unit of the second microlens array (ML2) is longer than the first width (P1) of the first iteration unit of the first microlens array (ML1), the diffraction order can be increased (wherein 2πm / a is a constant, "m" is the diffraction order, and "a" is the width). In addition, as the diffraction order gradually increases, the power (or intensity) of the backscattered light (BL) gradually decreases. As a result, as described above, the remaining backscattered light (BL) except the backscattered light (BL) of the region (B) can be ignored.

[0133] Depending on the size, width, etc. of the microlenses 27, 37, and 57 of the image sensors 100A to 100F according to various embodiments of the disclosed technology, the microlenses 27, 37, and 57 may be formed at various positions of the image sensors 100A to 100F. Fig.15 For example, in the case where the horizontal width of each microlens 27, 37, and 57 is set to about 1.12 μm, if the width of each microlens 37 and the width of each peripheral microlens 57 are about three times the width of each effective microlens 27, the glare phenomenon (F) is significantly reduced, as shown in FIG. Fig. 16C Therefore, in the case of changing the specifications, widths, etc. of the microlenses 27, 37, and 57, the width of each dummy microlens 37 and / or the width of each peripheral microlens 57 can be configured to have various multiples to minimize the glare phenomenon (F).

[0134] Fig.17 are photographic images illustrating examples of images captured by a camera system (CS) including any of the image sensors 100A to 100F based on some implementations of the disclosed technology.

[0135] Reference Fig.17 , can be obtained from Fig.15 The second peripheral area (PA2) is shown to minimize or eliminate glare (F).

[0136] As is apparent from the above description, an image sensor implemented based on an embodiment of the disclosed technology can reduce noise by minimizing a glare phenomenon due to backscattered light (BL) from a microlens.

[0137] Although this patent document contains many details, these details should not be interpreted as limitations on the scope of any invention or the scope that can be claimed, but rather as descriptions of features that can be specific to a specific embodiment of a specific invention. Some features described in the context of separate embodiments in this patent document may also be implemented in combination in a single embodiment. On the contrary, the various features described in the context of a single embodiment may also be implemented separately in multiple embodiments or in any suitable sub-combination. In addition, although the features may be described above as working in some combinations and even initially claimed as such, in some cases, one or more features from the claimed combination may be deleted from the combination, and the claimed combination may involve a sub-combination or a variation of a sub-combination.

[0138] Similarly, while operations are depicted in a particular order in the drawings, this should not be understood as requiring that such operations be performed in the particular order shown or in a sequential order, or that all of the illustrated operations be performed, in order to achieve the desired results. Furthermore, the separation of various system components in the embodiments described in this patent document should not be understood as requiring such separation in all embodiments.

[0139] Only a few implementations and examples are described, and other implementations, enhancements, and variations may be made based on what is described and illustrated in this patent document.

[0140] CROSS-REFERENCE TO RELATED APPLICATIONS

[0141] This patent document claims priority to and the benefit of Korean Patent Application No. 10-2019-0143580, filed on November 11, 2019, the disclosure of which is incorporated herein by reference in its entirety as a part of the disclosure of this patent document.

Claims

1. An image sensor, comprising: a pixel region, the pixel region comprising a first microlens array, the first microlens array comprising microlenses arranged in a first direction and in a second direction perpendicular to the first direction; as well as a shielding area, the shielding area being configured to surround the pixel area and being configured to include a second microlens array, the second microlens array being formed into a shape obtained when the first microlens array is rotated by a predetermined angle relative to the first direction, The first microlens array has a first iterative unit having a first width in the first direction, and the second microlens array has a second iterative unit having a second width longer than the first width in the first direction.

2. The image sensor according to claim 1, wherein: A rotation angle between the first microlens array and the second microlens array ranges from 0° to 45°.

3. The image sensor according to claim 1, wherein: The predetermined angle includes a different rotation angle depending on the position of the second microlens array in the shielding area, and A first rotation angle of the second microlens array at a first position of the shielding area is different from a second rotation angle of the second microlens array at a second position of the shielding area.

4. The image sensor according to claim 3, wherein: The rotation angle between the first position and the second position gradually changes from the first rotation angle to the second rotation angle.

5. The image sensor according to claim 3, wherein: The first rotation angle is determined based on an incident angle of a light component associated with a glare phenomenon among main rays incident on the first position.

6. The image sensor according to claim 1, wherein: The pixel region includes an effective pixel region located at a central portion of the pixel region and a dummy pixel region formed to surround the effective pixel region, and Wherein, the effective pixel area includes: an effective photodiode formed in a substrate; an effective grid pattern, the effective grid pattern being disposed above the substrate; an effective color filter disposed in a space between the effective grid patterns; an active overcoat layer formed over the active color filter; and an effective microlens formed over the effective outer coating, and Wherein, the dummy pixel area includes: a dummy photodiode formed in the substrate; a dummy grid pattern, the dummy grid pattern being disposed above the substrate; a dummy color filter disposed in a space between the dummy grid patterns; a dummy overcoat layer formed over the dummy color filter; and a dummy microlens formed above the dummy outer coating, Thus, the first microlens array includes the effective microlenses and the dummy microlenses.

7. The image sensor according to claim 1, wherein: The shading area includes a first shading area and a second shading area surrounding the first shading area. Wherein, each of the first shading area and the second shading area includes: A shielding layer, wherein the shielding layer is disposed above the substrate; a peripheral outer coating, the peripheral outer coating being disposed above the shielding layer; and a peripheral microlens disposed above the peripheral outer coating, and Wherein, the second microlens array includes the peripheral microlenses.

8. The image sensor according to claim 7, wherein: The first shielding region further includes a peripheral color filter formed above the shielding layer; and The second shielding region further includes an upper color filter formed above the shielding layer, and Wherein, the upper color filter has a greater vertical thickness than the peripheral color filter.

9. The image sensor according to claim 8, wherein: The upper color filter is a blue color filter.

10. The image sensor according to claim 8, wherein: The second shielding region further includes a peripheral color filter formed above the shielding layer; and The upper color filters are formed between the peripheral color filters.

11. The image sensor according to claim 7, wherein: The shielding layer is formed in a flat plate shape or a plate shape and includes a lower shielding layer and an upper shielding layer, and Wherein, the lower shielding layer comprises an insulating material, and the upper shielding layer comprises a metal material.

12. The image sensor according to claim 1, wherein: Each microlens arranged in the first microlens array and each microlens arranged in the second microlens array are formed according to the same specifications.

13. An image sensor, comprising: a first microlens array, the first microlens array comprising microlenses arranged in a first direction and in a second direction perpendicular to the first direction corresponding to respective pixels; as well as a second microlens array, the second microlens array surrounding the first microlens array and comprising microlenses arranged at the same pitch as the microlenses arranged in the first microlens array in a third direction and a fourth direction perpendicular to the third direction, the third direction being rotated by a predetermined angle relative to the first direction, wherein the first microlens array has a first iterative unit having a first width in the first direction, and the second microlens array has a second iterative unit having a second width different from the first width in the first direction, and Wherein, the first iteration unit includes one microlens, and the second iteration unit includes a plurality of microlenses having different heights in a cross-sectional view taken along a line parallel to the first direction.

14. The image sensor according to claim 13, wherein: The first microlens array is arranged in the effective pixel area. Wherein, the effective pixel area includes: a first pixel grid pattern disposed above a substrate; a first pixel color filter formed in a space between the first pixel grid patterns; and A first pixel overcoat layer is disposed between the first microlens array and the first pixel color filter.

15. The image sensor according to claim 14, wherein: The second microlens array is arranged in the shielding area, Wherein, the blocked area includes: a shielding layer, the shielding layer being disposed above the substrate; and A peripheral outer coating is disposed between the shielding layer and the second microlens array.

Images