Light emitting device and method for manufacturing the same

Abstract

The light-emitting device includes: a substrate; a first electrode arranged on the substrate, including a hole and having an inclined surface formed along the periphery of the hole; a second electrode arranged on the substrate and respectively located in the holes of the first electrode; and a light-emitting element located between the first electrode and the second electrode and electrically connected to the first electrode and the second electrode.

Description

Technical Field

[0001] The present invention relates to a device comprising a light emitting diode and a method for manufacturing the device. Background Art

[0002] A light emitting diode (LED) is an element that utilizes the characteristics of compound semiconductors to convert electrical signals into the form of light such as infrared rays, visible light, etc. LEDs are used in household appliances, remote controllers, electronic boards, various types of automation devices, etc., and the application range of LEDs is gradually expanding.

[0003] In addition, attempts to apply LEDs to display devices are expanding. For example, attempts to use LEDs as backlights of display devices or to directly realize self-emissive display devices by miniaturizing LEDs into units of fine pixels capable of displaying images are expanding.

[0004] Therefore, in order to reduce the size of the LED and ensure sufficient brightness for use in various types of devices, a structure in which a plurality of LEDs can be integrated is required. Summary of the invention

[0005] Technical issues

[0006] A wall is formed around the light emitting diode, and a reflective electrode is formed on the wall to reflect light emitted from a side surface of the light emitting diode forward, thereby increasing light emitting efficiency of the light emitting diode.

[0007] However, a process of manufacturing a light emitting device may be complicated due to forming a wall, forming a reflective electrode, and the like.

[0008] Therefore, the present invention is directed to providing a light emitting device that allows manufacturing through a more simplified process.

[0009] Furthermore, the present invention also provides a method for manufacturing a light emitting device having improved light emitting efficiency.

[0010] The scope of the present invention is not limited to the above-mentioned objects, and other unmentioned objects can be clearly understood by those skilled in the art through the following description.

[0011] Technical Solution

[0012] According to an embodiment of the present disclosure, a light-emitting device includes: a substrate; a first electrode, which is arranged on the substrate, includes a hole, and has an inclined surface formed along the periphery of the hole; second electrodes, which are arranged on the substrate, and each second electrode is arranged in one of the holes of the first electrode; and a light-emitting element, which is arranged between the first electrode and the second electrode and is electrically connected to the first electrode and the second electrode.

[0013] The light emitting device may further include: a transistor electrically connected to the first electrode; and a power supply line electrically connected to the second electrode.

[0014] A power line may be disposed under the substrate, and each of the second electrodes may be electrically connected to the power line through a through hole that penetrates the substrate to expose the power line.

[0015] The first electrode may include a first metal bonding layer, a metal conductive layer disposed on the first metal bonding layer, and a second metal bonding layer disposed on the metal conductive layer, the metal conductive layer may have a thickness greater than that of the first metal bonding layer and greater than that of the second metal bonding layer, and an inclined surface may be formed on the metal conductive layer.

[0016] The metal conductive layer may include a reflective material, and light emitted from the light emitting element may be reflected by the metal conductive layer.

[0017] An inclined angle formed by the inclined surface based on the substrate may be less than 60 degrees and greater than 20 degrees.

[0018] A first taper angle of an inner sidewall of the metal conductive layer may be different from a second taper angle of an outer sidewall of the metal conductive layer, and the inner sidewall of the metal conductive layer may be adjacent to the second electrode.

[0019] The inner sidewall of the metal conductive layer may be formed by a process different from a process for forming the outer sidewall of the metal conductive layer.

[0020] The light emitting device may further include a first pixel wall disposed on the first electrode, wherein the first pixel wall may include a bank hole corresponding to the hole.

[0021] The light emitting device may further include a second pixel wall disposed on each of the second electrodes.

[0022] Each of the second electrodes may include a central portion, a first peripheral portion, and a first connecting portion, the first peripheral portion being spaced apart from the central portion, extending along an edge of the central portion, and having two ends spaced apart from each other, the first connecting portion being configured to connect the central portion to the first peripheral portion, the first electrode may include a main body portion, a second peripheral portion, and a second connecting portion, the main body portion including a hole, the second peripheral portion extending along an edge of the central portion between the central portion and the first peripheral portion, and having two ends with the first connecting portion interposed therebetween, the second connecting portion passing through an area between the ends of the first peripheral portion to connect the second peripheral portion to the main body portion.

[0023] The central portion may have a circular planar shape, and each of the first peripheral portion and the second peripheral portion may have a ring shape in which a portion is cut in a plan view.

[0024] The light-emitting device may also include: a first insulating layer, which is arranged below the light-emitting element between the first electrode and the second electrode; an organic insulating layer, which is configured to cover the light-emitting element and expose both ends of each of the light-emitting elements; a first contact electrode, which is electrically connected to the first electrode, is arranged on the organic insulating layer, and is in contact with the first end of each of the light-emitting elements; and a second contact electrode, which is electrically connected to the second electrode, is arranged on the organic insulating layer, and is in contact with the second end of each of the light-emitting elements.

[0025] The first contact electrode and the second contact electrode may face each other and be disposed to be spaced apart from each other, and the light emitting device may further include a second insulating layer covering the first contact electrode and the second contact electrode and disposed in a region where the first contact electrode is spaced apart from the second contact electrode.

[0026] The first contact electrode and the second contact electrode may be arranged to be substantially coplanar.

[0027] Each of the light emitting elements may have a cylindrical shape, and a portion of a lower surface of each of the light emitting elements may be in direct contact with the first insulating layer.

[0028] According to an embodiment of the present disclosure, a method for manufacturing a light-emitting device is provided, the method comprising the following steps: forming an electrode layer on a substrate; patterning the electrode layer and forming a first pixel electrode and an unseparated electrode pattern, the first pixel electrodes being independently arranged, and the unseparated electrode pattern surrounding the first pixel electrode; arranging light-emitting elements on the unseparated electrode pattern and the first pixel electrode; forming an electric field between the unseparated electrode pattern and the first pixel electrode, and aligning the light-emitting elements; and patterning the unseparated electrode pattern and forming a second pixel electrode, the second pixel electrode surrounding at least one of the first pixel electrodes.

[0029] The unseparated electrode pattern may have a grid structure.

[0030] The step of forming the first pixel electrode and the unseparated electrode pattern may further include forming a first insulating layer, the first insulating layer being disposed on and between the first pixel electrode and the unseparated electrode pattern, and the light emitting element may be disposed on the first insulating layer.

[0031] The step of forming the first pixel electrode and the unseparated electrode pattern may further include forming a first pixel wall on the first insulating layer, and the first pixel wall may overlap the unseparated electrode pattern and surround each of the first pixel electrodes in a plan view.

[0032] The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments of the present invention with reference to the attached drawings.

[0033] Beneficial Effects

[0034] According to an embodiment of the present invention, the light emitting device includes the first electrode and the second electrode serving as integrated reflective electrodes, and thus the light emitting device can be manufactured through a more simplified process.

[0035] Furthermore, the first electrode is provided to surround the second electrode, and the light emitting element is provided between the first electrode and the second electrode, and therefore, the arrangement area of ​​the region in which the light emitting element is provided can be reduced, and light emitting efficiency can be improved.

[0036] According to an embodiment of the present invention, in a method of manufacturing a light emitting device, an electric field is formed using a non-separated electrode pattern before patterning a first electrode, and thus alignment efficiency of a light emitting element can be improved.

[0037] The effects according to the embodiments of the present invention are not limited to the above-exemplified contents, and more various effects are included in the specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 is a plan view of a light emitting device according to an embodiment.

[0039] Figure 2 It is shown along Figure 1 A cross-sectional view of an example of a light emitting device taken along line II'.

[0040] Figure 3 It is shown that the Figure 1 A view of an example of a light emitting element in a light emitting device.

[0041] Figures 4 to 18 It shows the manufacturing Figure 1 A view of a method of emitting light.

[0042] Fig.19 It is shown along Figure 1 A cross-sectional view of an example of a light emitting device taken along line II-II'.

[0043] Fig. 20 It is shown along Figure 1 A cross-sectional view of another example of the light emitting device taken along line II'.

[0044] Fig.21 is a plan view showing a light emitting device according to another embodiment.

[0045] Fig. 22 yes Fig.21 Magnified view of area AA.

[0046] Fig.23 It is shown along Fig. 22 A cross-sectional view of an example of the light emitting device taken along line III-III'.

[0047] Fig.24 It is shown along Fig. 22 A cross-sectional view of another example of the light emitting device taken along line III-III'.

[0048] Fig.25 is a circuit diagram of one pixel of a light emitting device according to an embodiment. DETAILED DESCRIPTION

[0049] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, the present invention may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art.

[0050] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Throughout the specification, the same reference numerals refer to the same components.

[0051] It will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the teachings of the present invention, the first element discussed below may be named as the second element. Similarly, the second element may also be named as the first element.

[0052] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0053] Figure 1 is a plan view of a light emitting device according to an embodiment.

[0054] Reference Figure 1 , the light emitting device 10 may include a first pixel PX1, a second pixel PX2, and a third pixel PX3. The first pixel PX1, the second pixel PX2, and the third pixel PX3 may be repeatedly arranged along the first direction D1.

[0055] Each of the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be a light-emitting unit of the smallest unit that emits light. When the light-emitting device 10 displays an image, each of the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be a light-emitting unit of the smallest unit that displays the color included in the image. The first pixel PX1, the second pixel PX2, and the third pixel PX3 may emit multiple groups of light (pieces of light, or multiple beams of light) having different colors. For example, the first pixel PX1 may emit light having a first color (e.g., red), the second pixel PX2 may emit light having a second color (e.g., green), and the third pixel PX3 may emit light having a third color (e.g., blue). Color may be achieved by a combination of the colors of the light emitted by the first pixel PX1, the second pixel PX2, and the third pixel PX3. The following will refer to Fig.19 A first pixel PX1 , a second pixel PX2 , and a third pixel PX3 are described.

[0056] The first, second and third pixels PX1, PX2 and PX3 may be substantially the same except for the multiple groups of emitted light colors. Hereinafter, common characteristics of the first, second and third pixels PX1, PX2 and PX3 will be described based on the first pixel PX1 and overlapping descriptions will not be repeated.

[0057] The first pixel PX1 may include a first electrode 330 (or pixel electrode), a second electrode 340 (or common electrode), and a light emitting element 350 formed on a circuit board 100 (or substrate). The circuit board 100 may be included in the light emitting device 10.

[0058] The circuit board 100 (or substrate) may include a transistor (not shown) that supplies current to the first pixel PX1 and the power electrode 162. Figure 2 The circuit board 100 will be described.

[0059] The first electrode 330 may be disposed on the circuit board 100. The first electrode 330 may have a rectangular shape in which a length in the first direction D1 is smaller than a length in the second direction D2, but the above shape is an example and the present disclosure is not limited thereto.

[0060] The first electrode 330 may include a plurality of holes. For example, the first electrode 330 may include a first hole HOL1, a second hole HOL2, and a third hole HOL3 arranged along the second direction D2, but the present invention is not limited thereto. For example, the first electrode 330 may include one hole, two holes, or four or more holes.

[0061] Hereinafter, an example in which the first electrode 330 includes the first hole HOL1 , the second hole HOL2 , and the third hole HOL3 will be described.

[0062] Each of the first hole HOL1 , the second hole HOL2 , and the third hole HOL3 may form a closed loop in a plan view and may not be connected to the outside.

[0063] like Figure 1 As shown in , each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 may have a circular planar shape. However, the above shapes are exemplary, and the present invention is not limited thereto. Each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 is not limited in shape as long as the shape can provide a space in which the second electrode 340 is disposed. For example, each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 may have a planar shape such as an elliptical shape, a rectangular shape, or other polygonal shapes.

[0064] The second electrode 340 may be provided on the circuit board 100. A plurality of second electrodes 340 may be provided, for example, three second electrodes 340 may be provided to correspond to the first hole HOL1, the second hole HOL2, and the third hole HOL3. Each of the second electrodes 340 may be located in one of the first hole HOL1, the second hole HOL2, and the third hole HOL3. The second electrode 340 may be surrounded by the first electrode 330.

[0065] The light emitting element 350 may be disposed between the first electrode 330 and the second electrode 340 on the circuit board 100, and may be electrically connected to the first electrode 330 and the second electrode 340. For example, the light emitting element 350 may be repeatedly arranged along the edge of the second electrode 340 in the first hole HOL1 of the first electrode 330. The light emitting element 350 may be arranged irregularly (or at irregular intervals), but the present invention is not limited thereto. For example, the light emitting element 350 may be repeatedly arranged at regular intervals (or at isometric angles based on the center of the area of ​​the second electrode 340).

[0066] The second electrode 340 may be electrically connected to the power electrode 162 .

[0067] The power electrode 162 may be disposed inside the circuit board 100, may extend in the second direction D2, and may be connected to the second electrode 340. In the circuit board 100, a contact hole 319_2 (or a fifth contact hole) may be formed through the upper surface of the circuit board 100 to expose the power electrode 162, and the second electrode 340 may be electrically connected to the power electrode 162 through the contact hole 319_2 (or the fifth contact hole).

[0068] As reference Figure 1As described, the first electrode 330 may include a first hole HOL1, a second hole HOL2, and a third hole HOL3, each of the second electrodes 340 may be disposed in one of the first hole HOL1, the second hole HOL2, and the third hole HOL3, and the light emitting element 350 may be repeatedly disposed in the first hole HOL1, the second hole HOL2, and the third hole HOL3 along the edge of the second electrode 340. In this case, the arrangement area (or arrangement space) in which the light emitting element 350 is disposed between the first electrode 330 and the second electrode 340 may be larger than the arrangement area (i.e., the area of ​​the region in which the light emitting element is disposed) in which the light emitting element is disposed between the electrodes having a linear form, and more light emitting elements 350 may be disposed, and thus, the maximum brightness of the light emitting device 10 may be improved.

[0069] At the same time, Figure 1 , the power electrode 162 is shown to extend along the second direction D2 (e.g., along the column direction) and intersect each of the first pixel PX1, the second pixel PX2, and the third pixel PX3, but the above configuration is exemplary and the power electrode 162 is not limited thereto. For example, the power electrode 162 may extend along the row direction, or may be arranged in the form of a grid.

[0070] Figure 2 It is shown along Figure 1 A cross-sectional view of an example of a light emitting device taken along line II'.

[0071] Reference Figure 2 , the light-emitting device 10 may include a circuit board 100 (or a circuit element layer) and a light-emitting element layer 300. The circuit board 100 includes a substrate 110, a first transistor 120 (or a first thin film transistor, a first switching element) and a second transistor 140 (or a second thin film transistor, a second switching element). The transistors 120 and 140 may include active layers 126 and 146, gate electrodes 121 and 141, source electrodes 124 and 144, and drain electrodes 123 and 143, respectively. The light-emitting element layer 300 may include a first electrode 330, a second electrode 340, and a light-emitting element 350. The above-mentioned transistors 120 and 140, the first electrode 330, the second electrode 340, and the light-emitting element 350 may constitute a pixel circuit. Fig.25 A specific example of a pixel circuit is shown in FIG.

[0072] Fig.25 is a circuit diagram of one pixel of a light emitting device according to an embodiment.

[0073] Reference Fig.25 , the pixel circuit may include a first transistor TR1 ( Figure 2 120), the second transistor TR2 ( Figure 2140), capacitor Cst and light emitting diode (LED).

[0074] The first transistor TR1 may be a driving transistor, and the second transistor TR2 may be a switching transistor. Fig.25 A case is shown in which both the first transistor TR1 and the second transistor TR2 are p-channel metal oxide semiconductor (PMOS) transistors, but any one of the first transistor TR1 and the second transistor TR2 or both the first transistor TR1 and the second transistor TR2 may be n-channel metal oxide semiconductor (NMOS) transistors.

[0075] The source electrode ( Figure 2 124) is connected to the first power line ELVDDL, the drain electrode ( Figure 2 123) is connected to the anode electrode ( Figure 2 The source electrode ( Figure 2 144) is connected to the data line DL, the drain electrode ( Figure 2 143 in) is connected to the gate electrode ( Figure 2 121 in FIG. 121). The capacitor Cst is connected between the gate electrode and the source electrode of the first transistor TR1. The cathode electrode ( Figure 2 The second power voltage ELVSS may be a voltage lower than the first power voltage ELVDD provided from the first power line ELVDDL.

[0076] In response to the scan signal applied to the scan line SL, the second transistor TR2 can output the data signal applied to the data line DL. The capacitor Cst can be charged with a voltage corresponding to the data signal received from the second transistor TR2. The first transistor TR1 can control the driving current flowing through the LED to correspond to the amount of charge stored in the capacitor Cst. Fig.25 The equivalent circuit diagram of is only one embodiment, and the pixel circuit may include a larger number (eg, seven) of transistors and capacitors.

[0077] Refer again Figure 2 The circuit board 100 may include a substrate 110 , a buffer layer 115 , a semiconductor layer, a first insulating layer 170 , a first conductive layer, a second insulating layer 180 , a second conductive layer, a third insulating layer 190 , a third conductive layer, and a fourth insulating layer 310 .

[0078] The substrate 110 may be an insulating substrate. The substrate 110 may be made of an insulating material such as glass, quartz, polymer resin, etc. The polymer material may include polyethersulfone (PES), polyacrylate (PA), polyarylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide (PI), polycarbonate (PC), cellulose triacetate (CAT), cellulose acetate propionate (CAP), or a combination thereof. The substrate 110 may be a rigid substrate or a flexible substrate that can be bent, folded, curled, etc.

[0079] The buffer layer 115 may be disposed on the substrate 110. The buffer layer 115 may prevent diffusion of impurity ions, prevent penetration of moisture or external air, and perform a surface planarization function. The buffer layer 115 may include silicon nitride, silicon oxide, silicon oxynitride, or the like.

[0080] The semiconductor layer may be disposed on the buffer layer 115. The semiconductor layer may include the first active layer 126 of the first transistor 120, the second active layer 146 of the second transistor 140, and the auxiliary layer 163. The semiconductor layer may include polycrystalline silicon, single crystal silicon, oxide semiconductor, or the like.

[0081] The first insulating layer 170 may be disposed on the semiconductor layer. The first insulating layer 170 may cover the semiconductor layer. The first insulating layer 170 may be used as a gate insulating film of a transistor. The first insulating layer 170 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc. The above materials may be used alone or in combination with each other.

[0082] The first conductive layer may be disposed on the first insulating layer 170. The first conductive layer may include a first gate electrode 121 disposed on the first active layer 126 of the first transistor 120, a second gate electrode 141 disposed on the second active layer 146 of the second transistor 140, and a power supply line 161 disposed on the auxiliary layer 163, and the first insulating layer 170 is disposed between the first gate electrode 121 and the first active layer 126, between the second gate electrode 141 and the second active layer 146, and between the power supply line 161 and the auxiliary layer 163. The first conductive layer may include one or more metals selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The first conductive layer may be a single-layer film or a multi-layer film.

[0083] The second insulating layer 180 may be disposed on the first conductive layer 100. The second insulating layer 180 may be made of an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, aluminum oxide, titanium oxide, tantalum oxide, zinc oxide, or the like.

[0084] The second conductive layer may be disposed on the second insulating layer 180. The second conductive layer may include a capacitor electrode 128 disposed on the first gate electrode 121, with the second insulating layer 180 interposed between the capacitor electrode 128 and the first gate electrode 121. The capacitor electrode 128 may form a storage capacitor (e.g., a capacitor that stores or holds an electrical signal) together with the first gate electrode 121.

[0085] Similar to the first conductive layer, the second conductive layer may include one or more metals selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W) and copper (Cu).

[0086] The third insulating layer 190 may be disposed on the second conductive layer. The third insulating layer 190 may be an interlayer insulating film. In addition, the third insulating layer 190 may perform a surface planarization function. The third insulating layer 190 may include an organic insulating material such as a polyacrylate resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene ether resin, a polyphenylene sulfide resin, benzocyclobutene (BCB), etc.

[0087] The third conductive layer may be disposed on the third insulating layer 190. The third conductive layer may include the first drain electrode 123 and the first source electrode 124 of the first transistor 120, the second drain electrode 143 and the second source electrode 144 of the second transistor 140, and the power electrode 162 disposed above the power line 161.

[0088] Each of the first source electrode 124 and the first drain electrode 123 may be electrically connected to the first active layer 126 through a first contact hole 129 passing through the third insulating layer 190, the second insulating layer 180, and the first insulating layer 170. Each of the second source electrode 144 and the second drain electrode 143 may be electrically connected to the second active layer 146 through a second contact hole 149 passing through the third insulating layer 190, the second insulating layer 180, and the first insulating layer 170. The power electrode 162 may be electrically connected to the power line 161 through a third contact hole 169 passing through the third insulating layer 190 and the second insulating layer 180.

[0089] The third conductive layer may include one or more metals selected from aluminum (Al), molybdenum (Mo), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W) and copper (Cu). The third conductive layer may be a single-layer film or a multi-layer film. For example, the third conductive layer may be formed as a stacked structure of Ti / Al / Ti, Mo / Al / Mo, Mo / AlGe / Mo, Ti / Cu, etc.

[0090] The fourth insulating layer 310 may be disposed on the third conductive layer. The fourth insulating layer 310 may be made of an organic insulating material such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, BCB, etc. The surface of the fourth insulating layer 310 may be flat.

[0091] Hereinafter, the light emitting element layer 300 will be described.

[0092] The first electrode 330 and the second electrode 340 may be disposed on the fourth insulating layer 310. The first electrode 330 may be electrically connected to the first drain electrode 123 of the first transistor 120 through a fourth contact hole 319_1 passing through the fourth insulating layer 310. The second electrode 340 may be disposed to be spaced apart from the first electrode 330, and may be electrically connected to the power electrode 162 through a fifth contact hole 319_2 passing through the fourth insulating layer 310.

[0093] The first electrode 330 and the second electrode 340 may include one or more metals selected from aluminum (Al), molybdenum (Mo), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W) and copper (Cu). The first electrode 330 and the second electrode 340 may be a single-layer film or a multi-layer film. For example, the first electrode 330 and the second electrode 340 may be formed as a stacked structure of Ti / Al / Ti, Mo / Al / Mo, Mo / AlGe / Mo, Ti / Cu, etc.

[0094] In an embodiment, the first electrode 330 and the second electrode 340 may include a reflective material (or a material with high reflectivity) having a reflective property of reflecting light. Here, the reflective material may include at least one selected from the group consisting of silver (Ag), magnesium (Mg), chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W), aluminum (Al), aluminum-lithium (Al-Li), magnesium-indium (Mg-In) and magnesium-silver (Mg-Ag). In this case, the first electrode 330 and the second electrode 340 may be used as a reflective wall that reflects light emitted from the side surface of the light emitting element 350.

[0095] In an embodiment, at least one of the thickness of the first electrode 330 and the thickness of the second electrode 340 may be greater than the thickness of the light emitting element 350 .

[0096] The thickness of the first electrode 330 and the thickness of the second electrode 340 may be determined by the position of the light emitting element 350 in the thickness direction (e.g., the third direction D3), the angle at which light is emitted from the light emitting element 350, the separation distance from the light emitting element 350, etc., but the thickness of the first electrode 330 and the thickness of the second electrode 340 may be substantially greater than the thickness of the light emitting element 350 (e.g., ) is large. For example, the thickness of the first electrode 330 may be or larger, or greater or or greater, or can be In addition, the thickness of the first electrode 330 and the thickness of the second electrode 340 may be greater than the length (or maximum length, for example, ) is large. For example, the thickness of the first electrode 330 may be or greater. The thickness of the first electrode 330 and the thickness of the second electrode 340 may be less than

[0097] In an embodiment, the first electrode 330 and the second electrode 340 may have inclined sidewalls or tapered cross-sectional shapes.

[0098] The inner sidewall 332_S1 (or the first inclined surface) of the first electrode 330 adjacent to the light emitting element 350 may form an acute angle with the fourth insulating layer 310. Similarly, the outer sidewall 342_S1 (or the inclined surface) of the second electrode 340 adjacent to the light emitting element 350 may form an acute angle with the fourth insulating layer 310. That is, the inner sidewall 332_S1 of the first electrode 330 and the outer sidewall 342_S1 of the second electrode 340 positioned adjacent to the light emitting element 350 may be formed to be inclined. In this case, light emitted from the side surface of the light emitting element 350 may be substantially reflected upward by the inner sidewall 332_S1 of the first electrode 330 and the outer sidewall 342_S1 of the second electrode 340. In addition, the outer sidewall 332_S2 (or the second inclined surface) of the first electrode 330 may also form an acute angle with the fourth insulating layer 310, or may be formed to be inclined.

[0099] In some embodiments, the first inclination angle θ1 (or the first taper angle) of the inner side wall 332_S1 (or the first inclined surface) of the first electrode 330 may be 60 degrees or less, in the range of 20 degrees to 60 degrees, or in the range of 40 degrees to 50 degrees. In this case, the light emitted from the side surface of the light emitting element 350 may be Figure 1 1 is substantially reflected upward in the area occupied by the first pixel PX1 shown in . Similarly, the inclination angle of the outer sidewall 342_S1 of the second electrode 340 may be the same or similar to the first inclination angle θ1. As will be described below, the inner sidewall 332_S1 of the first electrode 330 and the outer sidewall 342_S1 of the second electrode 340 may be formed by the same process (e.g., a patterning process, a mask process, or an etching process), and therefore, the first inclined surface of the first electrode 330 may be substantially the same as the inclined surface of the second electrode 340.

[0100] In an embodiment, a first inclination angle θ1 of an inner sidewall 332_S1 of a first electrode 330 may be different from a second inclination angle θ2 (or a second taper angle) of an outer sidewall 332_S2 of the first electrode 330. Here, the outer sidewall 332_S2 of the first electrode 330 may be a side surface formed along an outer edge of the first electrode 330, may be spaced apart from the second electrode 340, and may be adjacent to or may face a first electrode of another pixel (e.g., a second pixel PX2).

[0101] If you will refer to Fig.13As described, the outer sidewall 332_S2 of the first electrode 330 may be formed by a process different from the process in which the inner sidewall 332_S1 of the first electrode 330 is formed (or at a time point different from the time point in which the inner sidewall 332_S1 of the first electrode 330 is formed), and the outer sidewall 332_S2 of the first electrode 330 does not need to be used as a reflective wall that reflects light in a specific direction. Therefore, the second inclination angle θ2 of the outer sidewall 332_S2 of the first electrode 330 may be different from the first inclination angle θ1 of the inner sidewall 332_S1 of the first electrode 330. For example, the second inclination angle θ2 of the outer sidewall 332_S2 of the first electrode 330 may be greater than the first inclination angle θ1 of the inner sidewall 332_S1 of the first electrode 330.

[0102] However, the above configuration is exemplary and the present invention is not limited thereto. For example, the second inclination angle θ2 of the outer sidewall 332_S2 of the first electrode 330 may be smaller than the first inclination angle θ1 of the inner sidewall 332_S1 of the first electrode 330, or the second inclination angle θ2 of the outer sidewall 332_S2 of the first electrode 330 may be the same as the first inclination angle θ1 of the inner sidewall 332_S1 of the first electrode 330.

[0103] In some embodiments, the first electrode 330 and the second electrode 340 may include first metal bonding layers 331 and 341, metal conductive layers 332 and 342, and second metal bonding layers 333 and 343, respectively. Based on the first electrode 330, the first metal bonding layer 331 may be disposed on the circuit board 100 (or the fourth insulating layer 310), and may have a low contact resistance relative to the lower conductive layer (e.g., the first drain electrode 123, the power electrode 162). The metal conductive layer 332 may be disposed on the first metal bonding layer 331, and may have a relatively high electrical conductivity (or conductivity). The second metal bonding layer 333 may be disposed on the metal conductive layer 332, and may have a relatively high bonding force with the fifth insulating layer 510 to be described below.

[0104] The metal conductive layer 332 may have a thickness greater than that of the first metal bonding layer 331 and greater than that of the second metal bonding layer 333. In this case, the inclined inner sidewall 332_S1 and the inclined outer sidewall 332_S2 (or the first inclined surface and the second inclined surface) of the first electrode 330 may be formed on the metal conductive layer 332. Similarly, the inclined outer sidewall 342_S1 of the second electrode 340 may be formed on the metal conductive layer 342.

[0105] Since the metal conductive layer 332 may have a relatively large thickness, the first electrode 330 may be relatively thickly formed, and thus the resistance value of the first electrode 330 may be relatively small. Therefore, a drop (e.g., IR drop) of an electrical signal (e.g., a data signal corresponding to an image or a power source V for arrangement of the light emitting element 350 to be described below) due to the first electrode 330 may be reduced, and alignment efficiency of the light emitting element 350 may be improved.

[0106] Refer again Figure 2 , the fifth insulating layer 510 may be disposed on some regions of the first electrode 330 and the second electrode 340. The fifth insulating layer 510 may be disposed in a space between the first electrode 330 and the second electrode 340. For example, the fifth insulating layer 510 may include a first insulating pattern 511, a second insulating pattern 512, and a third insulating pattern 513.

[0107] In a top view, the first insulating pattern 511 may form a closed loop along the periphery of the holes HOL1, HOL2, and HOL3 of the first electrode 330 (or the edge of the second electrode 340), and in a top view, the first insulating pattern 511 may have, for example, a ring shape. The second insulating pattern 512 may be disposed on the first electrode 330, and the third insulating pattern 513 may be disposed on the second electrode 340.

[0108] The first insulating pattern 511 may be disposed between the light emitting element 350 and the fourth insulating layer 310. The lower surface of the first insulating pattern 511 may be in contact with the fourth insulating layer 310, and the light emitting element 350 may be disposed on the upper surface of the first insulating pattern 511. The first insulating pattern 511 may be in contact with the first electrode 330 and the second electrode 340 at both side surfaces, may physically separate the first electrode 330 from the second electrode 340, and may prevent the first electrode 330 and the second electrode 340 from directly contacting each other. That is, the first insulating pattern 511 may prevent the first electrode 330 and the second electrode 340 from being directly electrically connected to each other on the same plane.

[0109] The fifth insulating layer 510 (or the first insulating pattern 511) may overlap some regions of the first electrode 330 and the second electrode 340 (e.g., a portion of the inclined surfaces of the first electrode 330 and the second electrode 340 formed in the direction in which the first electrode 330 and the second electrode 340 face each other). For example, both ends of the first insulating pattern 511 may cover the inclined surfaces formed in the direction in which the first electrode 330 and the second electrode 340 face each other. The first insulating pattern 511 may protect the region overlapping the first electrode 330 and the second electrode 340, while electrically insulating the first electrode 330 from the second electrode 340. In addition, the first semiconductor layer 351 and the second semiconductor layer 352 of the light emitting element 350 to be described below may be prevented from directly contacting other base materials, thereby preventing the light emitting element 350 from being damaged.

[0110] exist Figure 2 , the first insulating pattern 511 is shown to extend longer than the light emitting element 350, but the present invention is not limited thereto. For example, the first insulating pattern 511 may have a length similar to that of the light emitting element 350, and both side surfaces of the first insulating pattern 511 may be aligned with both side surfaces of the light emitting element 350.

[0111] The first electrode 330 and the second electrode 340 may be disposed at a predetermined interval from each other, and the interval may be less than or equal to the length of the light emitting element 350. In this case, electrical contact between the first electrode 330 and the second electrode 240 may be smooth.

[0112] The pixel walls 421 and 422 may be formed on the fifth insulating layer 510. The pixel walls 421 and 422 may define the boundaries between the pixels PX1, PX2, and PX3. In addition, the pixel walls 421 and 422 may define the areas in which the light emitting element solution S (i.e., the solution including the light emitting element 350) is disposed using an inkjet printing method or the like (this will be Fig.10 ) area.

[0113] The first pixel wall 421 may be disposed on the second insulating pattern 512, and the second pixel wall 422 may be disposed on the third insulating pattern 513. The second pixel wall 422 may be omitted. Figure 2 , the first pixel wall 421 is shown to be disposed to overlap the second insulating pattern 512 , but the present invention is not limited thereto. For example, the first pixel wall 421 may be disposed to overlap the outer side surface of the first electrode 330 .

[0114] The light emitting element 350 may be disposed between the first electrode 330 and the second electrode 340. The light emitting element 350 may emit light having different colors according to the material of the active material layer. When different types of light emitting elements 350 are arranged in the pixels PX1, PX2, and PX3, the pixels PX1, PX2, and PX3 may emit multiple groups of light having different colors. For example, the light emitting element 350 emits light in a blue band, a green band, or a red band, so that the pixels PX1, PX2, and PX3 may emit blue light, green light, and red light, respectively. However, the present invention is not limited thereto. In some cases, the light emitting element 350 may all emit light of the same color band, so that the pixels PX1, PX2, and PX3 may be implemented to emit light having the same color (e.g., blue). In addition, the light emitting element 350 emitting multiple groups of light having different color bands may be disposed in one pixel (e.g., the first pixel PX1) to emit multiple groups of light having different colors (e.g., white).

[0115] The light emitting element 350 may be an LED. The light emitting element 350 may have a nanostructure having a size of a nanometer unit. The light emitting element 350 may be an inorganic light emitting diode made of an inorganic material. When the light emitting element 350 is an inorganic light emitting diode, a light emitting material having an inorganic crystal structure may be disposed between two electrodes facing each other, and when an electric field is formed on the light emitting material in a specific direction, the inorganic light emitting diode may be disposed between two electrodes having a specific polarity. Fig.11 The arrangement of the light emitting elements 350 is described.

[0116] The sixth insulating layer 520 may be disposed on the light emitting element 350 to protect the light emitting element 350 and fix the light emitting element 350 between the first electrode 330 and the second electrode 340. The sixth insulating layer 520 may also be disposed on the outer surface of the light emitting element 350 to fix the light emitting element 350. The sixth insulating layer 520 may be disposed in some areas of the outer surface of the light emitting element 350 so that both side surfaces of the light emitting element 350 may be exposed.

[0117] The sixth insulating layer 520 may include an insulating inorganic material. When the sixth insulating layer 520 is formed by a mask process, defects (seams) of inorganic material crystals may be generated in the upper surface and the peripheral surface of the light-emitting element 350 and in the region adjacent to the light-emitting element 350. When defects are generated in the region where the light-emitting element 350 and the inorganic material layer for forming the sixth insulating layer 520 are in contact with each other, the inorganic material layer may be excessively etched due to the defects during the subsequent mask process, or in some cases, the materials in contact with each other may be separated. In addition, a gap may be formed between the light-emitting element 350 and the fourth insulating layer 310. In addition, when the inorganic material layer is deposited, the sixth insulating layer 520 may be unevenly formed on the light-emitting element 350 due to low step coverage. In addition, even in the case where the first contact electrode 360 ​​and the second contact electrode 370 are formed when the step coverage is low, the contact electrode material may be cut and the light-emitting element 350 may be electrically disconnected.

[0118] Therefore, the seventh insulating layer 530 may be disposed on the sixth insulating layer 520. A cross section of the seventh insulating layer 530 may be disposed on a cross section of the sixth insulating layer 520, and the seventh insulating layer 530 may be disposed to cover at least a portion of an outer surface of the sixth insulating layer 520.

[0119] The seventh insulating layer 530 can fill defects (seam) that may be formed in the inorganic material layer (such as the sixth insulating layer 520) or gaps that may be formed under the light emitting element 350. Therefore, the low step coverage of the sixth insulating layer 520 can be eliminated, and the disconnection of the contact electrode material can be prevented. In addition, the sixth insulating layer 520 can be planarized by the seventh insulating layer 530. When the upper surface of the sixth insulating layer 520 is planarized by the seventh insulating layer 530, the subsequent process of forming the first contact electrode 360 ​​and the second contact electrode 370 can be performed relatively smoothly.

[0120] The length of the seventh insulating layer 530 may be smaller than the length of the light emitting element 350 , in which case the light emitting element 350 and the seventh insulating layer 530 may be stacked in a stepped manner.

[0121] The first contact electrode 360 ​​and the second contact electrode 370 may be disposed on the seventh insulating layer 530. The first contact electrode 360 ​​may be disposed on the first electrode 330 and may overlap at least a portion of the seventh insulating layer 530. The second contact electrode 370 may be disposed on the second electrode 340, may be disposed to be spaced apart from the first contact electrode 360, and may contact at least a portion of the seventh insulating layer 530.

[0122] The first contact electrode 360 ​​and the second contact electrode 370 may be electrically connected to the first electrode 330 and the second electrode 340 partially exposed by the fifth insulating layer 510 (or the second insulating pattern 512, the third insulating pattern 513), respectively. The first contact electrode 360 ​​and the second contact electrode 370 may be respectively disposed on the upper surfaces of the first electrode 330 and the second electrode 340 (i.e., the upper surfaces exposed by the second insulating pattern 512 and the third insulating pattern 513). The first contact electrode 360 ​​and the second contact electrode 370 may be in contact with the upper surfaces (and / or side surfaces, inclined surfaces) of the first electrode 330 and the second electrode 340, respectively. The first contact electrode 360 ​​and the second contact electrode 370 may be in contact with the first semiconductor layer 351 and the second semiconductor layer 352 of the light emitting element 350, respectively. Therefore, the first contact electrode 360 ​​and the second contact electrode 370 may transmit the signals applied to the first electrode 330 and the second electrode 340, respectively, to the light emitting element 350.

[0123] The first contact electrode 360 ​​may be disposed on the first electrode 330 to cover the first electrode 330, and the lower surface of the first contact electrode 360 ​​may be in partial contact with the light emitting element 350 and the seventh insulating layer 530. One end of the first contact electrode 360 ​​in the direction in which the second electrode 340 is disposed may be disposed on the seventh insulating layer 530. The second contact electrode 370 may be disposed on the second electrode 340 to cover the second electrode 340, and the lower surface of the second contact electrode 370 may be in partial contact with the light emitting element 350, the seventh insulating layer 530, and the eighth insulating layer 540. One end of the second contact electrode 370 in the direction in which the first electrode 330 is disposed may be disposed on the eighth insulating layer 540.

[0124] The first contact electrode 360 ​​and the second contact electrode 370 may be disposed on the seventh insulating layer 530 or the eighth insulating layer 540 to be spaced apart from each other. That is, the first contact electrode 360 ​​and the second contact electrode 370 may contact the light emitting element 350 and the seventh insulating layer 530 or the eighth insulating layer 540, but may be spaced apart from each other on the seventh insulating layer 530 without being connected. The first contact electrode 360 ​​and the second contact electrode 370 may be physically spaced apart from each other, and thus, different voltages may be applied to the first contact electrode 360 ​​and the second contact electrode 370. For example, an electrical signal (e.g., a driving voltage) applied from the first transistor 120 to the first electrode 330 may be applied to the first contact electrode 360 ​​connected to the first electrode 330 by passing through the fourth contact hole 319_1 of the fourth insulating layer 310, and a power supply voltage applied from the power supply line 161 and the power supply electrode 162 to the second electrode 340 may be applied to the second contact electrode 370 connected to the second electrode 340 by passing through the fifth contact hole 319_2 of the fourth insulating layer 310. However, the present invention is not limited thereto.

[0125] The first contact electrode 360 ​​and the second contact electrode 370 may include a conductive material. For example, the first contact electrode 360 ​​and the second contact electrode 370 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), aluminum (Al), etc. However, the present invention is not limited thereto.

[0126] The first contact electrode 360 ​​and the second contact electrode 370 may be disposed on the first electrode 330 and the second electrode 340 in substantially the same pattern to make contact with the first electrode 330 and the second electrode 340 .

[0127] The eighth insulating layer 540 may be disposed above the first contact electrode 360, may physically separate the first contact electrode 360 ​​from the second contact electrode 370, and may prevent the first contact electrode 360 ​​and the second contact electrode 370 from directly contacting each other. The eighth insulating layer 540 may be disposed to cover the first contact electrode 360, and may be disposed not to overlap with a partial region of the light emitting element 350 so that the light emitting element 350 may be connected to the second contact electrode 370. On the upper surface of the seventh insulating layer 530, the eighth insulating layer 540 may be in partial contact with the first contact electrode 360 ​​and the seventh insulating layer 530. The eighth insulating layer 540 may be disposed on the upper surface of the seventh insulating layer 530 to cover one end of the first contact electrode 360. Therefore, the eighth insulating layer 540 may protect the first contact electrode 360, and at the same time may prevent the first contact electrode 360 ​​from directly contacting the second contact electrode 370.

[0128] One end portion of the eighth insulating layer 540 in a direction in which the second electrode 340 is disposed may be disposed to cover the seventh insulating layer 530 , and may be aligned with one side surface of the sixth insulating layer 520 .

[0129] The eighth insulating layer 540 may be omitted. Therefore, the first contact electrode 360 ​​and the second contact electrode 370 may be disposed substantially coplanar, may be physically separated from each other by a passivation layer 550 to be described below, and may not be directly connected to each other.

[0130] The passivation layer 550 may be formed over the eighth insulating layer 540 and the second contact electrode 370, and may be used to protect the components disposed on the fourth insulating layer 310 from the external environment. When the first contact electrode 360 ​​and the second contact electrode 370 are exposed, since a disconnection problem of the contact electrode material may occur due to damage to the electrodes, the first contact electrode 360 ​​and the second contact electrode 370 may be covered with the passivation layer 550. That is, the passivation layer 550 may be provided to cover the first electrode 330, the second electrode 340, the light emitting element 350, and the like. In addition, when the eighth insulating layer 540 is omitted, the passivation layer 550 may be formed over the first contact electrode 360 ​​and the second contact electrode 370. In this case, the passivation layer 550 may electrically insulate the first contact electrode 360 ​​from the second contact electrode 370.

[0131] In an embodiment, each of the fifth insulating layer 510, the sixth insulating layer 520, the eighth insulating layer 540, and the passivation layer 550 may include an inorganic insulating material. For example, the fifth insulating layer 510, the sixth insulating layer 520, the eighth insulating layer 540, and the passivation layer 550 may include an inorganic insulating material such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), etc. The fifth insulating layer 510, the sixth insulating layer 520, the eighth insulating layer 540, and the passivation layer 550 may be made of the same material or different materials. In addition, various materials that impart insulation may be applied to the fifth insulating layer 510, the sixth insulating layer 520, the eighth insulating layer 540, and the passivation layer 550.

[0132] Meanwhile, the fifth insulating layer 510, the eighth insulating layer 540, and the passivation layer 550 may also include an organic insulating material like the seventh insulating layer 530. However, the present invention is not limited thereto. Any material may be used as the organic insulating material included in the seventh insulating layer 530 without any particular limitation as long as the material is within a range that does not affect the characteristics of the light-emitting element solution S. For example, the organic insulating material may include at least one selected from the group consisting of epoxy resin, cardo resin, polyimide resin, acrylic resin, siloxane resin, and silsesquioxane resin, but the present invention is not limited thereto.

[0133] As reference Figure 2As described, the light emitting device 10 may include a first electrode 330 and a second electrode 340, which are made of a reflective material and have a thick and inclined surface, and may include a light emitting element 350, the first electrode 330 and the second electrode 340 being arranged between the first electrode 330 and the second electrode 340. That is, the first electrode 330 and the second electrode 340 may be formed as an integrated reflective electrode, rather than including separate walls, electrodes, reflective electrodes, etc., and therefore, the manufacturing process of the light emitting device 10 may be simplified.

[0134] In addition, the first electrode 330 and the second electrode 340 can be formed to be relatively thick so that their resistance values ​​can be relatively reduced. Therefore, the decrease of the electric signal (for example, power for aligning the light emitting element 350 or a data signal for displaying an image) applied to the first electrode 330 and the second electrode 340 can be prevented, and the light emitting efficiency (or alignment efficiency of the light emitting element 350) and the display quality of the light emitting device 10 can be improved.

[0135] Figure 3 It is shown that the Figure 1 A view of an example of a light emitting element in a light emitting device.

[0136] Reference Figure 3 , the light emitting element 350 may include semiconductor layers 351 and 352 and an active material layer 353 disposed between the semiconductor layers 351 and 352. In addition, the light emitting element 350 may further include an insulating material layer 354. An electrical signal applied from the first electrode 330 and the second electrode 340 may be transmitted to the active material layer 353 through the semiconductor layers 351 and 352, so that the light emitting element 350 emits light.

[0137] The first semiconductor layer 351 may be an n-type semiconductor layer. For example, when the light emitting element 350 emits light in the blue wavelength band, the first semiconductor layer 351 may be an n-type semiconductor layer. x Al y Ga 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) semiconductor material. For example, the first semiconductor layer 351 may be any one or more of n-type doped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN. The first semiconductor layer 351 may be doped with a first conductive dopant, which may be, for example, Si, Ge, Se, Sn, etc. The first semiconductor layer 351 may have a length in the range of 1.5 μm to 5 μm, but the present invention is not limited thereto.

[0138] The second semiconductor layer 352 may be a p-type semiconductor layer. For example, when the light emitting element 350 emits light in the blue wavelength band, the second semiconductor layer 352 may be a p-type semiconductor layer.x Al y Ga 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) semiconductor material. For example, the second semiconductor layer 352 may be any one or more of p-type doped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN. The second semiconductor layer 352 may be doped with a second conductive dopant, which may be, for example, Mg, Zn, Ca, Ba, etc. The second semiconductor layer 352 may have a length in the range of 0.08 μm to 0.25 μm, but the present invention is not limited thereto.

[0139] The active material layer 353 may be disposed between the first semiconductor layer 351 and the second semiconductor layer 352, and may include a material having a single quantum well structure or a multi-quantum well structure. However, the present invention is not limited thereto, and the active material layer 353 may have a structure in which semiconductor materials having high band gap energy and semiconductor materials having low band gap energy are alternately stacked.

[0140] According to the electrical signal applied through the first semiconductor layer 351 and the second semiconductor layer 352, the active material layer 353 can emit light by the combination of electron-hole pairs. For example, when the active material layer 353 emits light in the blue band, the active material layer 353 may include materials such as AlGaN, AlInGaN, etc., and may include other III-group to V-group semiconductor materials according to the band of the emitted light. Therefore, the light emitted from the active material layer 353 is not limited to the light in the blue band, and in some cases, light in the red band or the green band may be emitted. The active material layer 353 may have a length in the range of 0.05 μm to 0.25 μm, but the present invention is not limited thereto.

[0141] The light emitted from the active material layer 353 may be emitted not only to the outer surface of the light emitting element 350 in the radial direction but also to both side surfaces. That is, the light emitted from the active material layer 353 is not limited to one direction in terms of directivity.

[0142] The insulating material layer 354 may be formed at the outer side of the light emitting element 350 to protect the light emitting element 350. For example, the insulating material layer 354 may be formed to surround the outer surface of the light emitting element 350, and may not be formed on both ends of the light emitting element 350 in the longitudinal direction (for example, both ends of the first semiconductor layer 351 and the second semiconductor layer 352). However, the present invention is not limited thereto. The insulating material layer 354 may include a material having an insulating property, for example, silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x Ny ), aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) etc. Therefore, an electrical short circuit that may occur when the active material layer 353 is in direct contact with the first electrode 330 or the second electrode 340 can be prevented. In addition, since the insulating material layer 354 protects the outer surface of the light emitting element 350 and the active material layer 353, a reduction in light emitting efficiency can be prevented.

[0143] The insulating material layer 354 may have a thickness in the range of 0.5 μm to 1.5 μm, but the present invention is not limited thereto.

[0144] The light emitting element 350 may have a cylindrical shape. However, the shape of the light emitting element 350 is not limited thereto, and the light emitting element 350 may have various shapes such as a cubic shape, a rectangular parallelepiped shape, a hexagonal column shape, etc. The light emitting element 350 may have a length l in the range of 1 μm to 10 μm (or a range of 2 μm to 5 μm), preferably, a length l of about 4 μm. In addition, the light emitting element 350 may have a diameter (thickness in cross section) in the range of 400 nm to 700 nm, preferably, a diameter (thickness in cross section) of about 500 nm.

[0145] In some embodiments, the light emitting element 350 may further include an electrode layer, which is located on at least one of the two side surfaces on which the first semiconductor layer 351 and the second semiconductor layer 352 are disposed. In this case, the insulating material layer 354 may be formed to extend in the longitudinal direction to cover the outer surface of the electrode layer. However, the present invention is not limited thereto, and the insulating material layer 354 may only cover the first semiconductor layer 351, the active material layer 353, and the second semiconductor layer 352, or may only cover a portion of the outer surface of the electrode layer, so that some portions of the outer surface of the electrode layer may be exposed.

[0146] The electrode layer may be an ohmic contact electrode. However, the present invention is not limited thereto, and the electrode layer may be a Schottky contact electrode. The electrode layer may include a conductive metal. For example, the electrode layer may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), and silver (Ag).

[0147] Figures 4 to 18 It shows the manufacturing Figure 1 A view of a method of emitting light.

[0148] First, refer to Figure 1 , Figure 2 and Figure 4 , set the circuit board 100. Figure 4, only the fourth insulating layer 310 of the circuit board 100 is shown, but the substrate 110, the transistors 120 and 140, the power line 161, etc. are omitted for ease of description, and reference is made to Figure 2 The circuit board 100 described above can be applied to Figures 4 to 18 The configuration of the circuit board 100 does not need to be changed.

[0149] Subsequently, an unseparated mother electrode 210 is formed on the circuit board 100. The mother electrode 210 is an electrode that is formed entirely on the entire surface of one surface of the circuit board 100 and is an electrode that will be separated by patterning to become a plurality of first electrodes and a plurality of second electrodes. A plurality of fourth contact holes ( Figure 2 319_1) and a plurality of fifth contact holes ( Figure 2 319_2 in the figure), so that the mother electrode 210 can be electrically connected to the first drain electrode 123 and the power electrode 162 of the first transistor 120 through the fourth contact hole 319_1 and the fifth contact hole 319_2.

[0150] The mother electrode 210 may include a first metal bonding layer 211, a metal conductive layer 212, and a second metal bonding layer 213. Here, the first metal bonding layer 211, the metal conductive layer 212, and the second metal bonding layer 213 may be respectively connected to the reference Figure 2 The described first metal bonding layer 331 , metal conductive layer 332 , and second metal bonding layer 333 are substantially the same.

[0151] Then, if Figure 5 As shown in FIG. 1 , the mother electrode 210 is patterned to form a plurality of second electrodes 340 and an unseparated electrode pattern 230. The unseparated electrode pattern 230 is a residual electrode pattern remaining after the plurality of second electrodes 340 are formed from the mother electrode 210, and is an electrode pattern to be separated to become a plurality of first electrodes 330. Figure 6 is with Figure 5 The corresponding plan view. Figure 6 As shown in , the unseparated electrode pattern 230 may have a shape of one electrode pattern (i.e., one electrode pattern that is not divided for each of the pixels PX1, PX2, and PX3) surrounding the second electrode 340 and disposed on the circuit board 100. In an embodiment, the unseparated electrode pattern 230 may have a grid structure.

[0152] That is to say, in reference Figure 1 and Figure 2 Among the described first electrodes 330 and second electrodes 340 , only the second electrodes 340 (and the unseparated electrode patterns 230 ) required for the alignment of the light emitting element 350 may be preferentially patterned or formed.

[0153] As reference Figure 2 As described, the second electrode 340 may have a tapered shape, and the unseparated electrode pattern 230 may also have a tapered shape. The second electrode 340 may have a tapered angle of 60 degrees or less, and the unseparated electrode pattern 230 formed by patterning from the same mother electrode 210 may have the same tapered angle as that of the second electrode 340.

[0154] Then, if Figure 7 As shown in FIG. 5 , a fifth insulating layer 510 is formed to cover the second electrode 340 and the unseparated electrode pattern 230 .

[0155] Then, refer to Figure 8 , a pixel wall 420 is formed on the fifth insulating layer 510, and the fifth insulating layer 510 is patterned to form a first insulating pattern 511, a second insulating pattern 512, and a third insulating pattern 513. The patterning of the fifth insulating layer 510 may be performed after forming the pixel wall 420, or the pixel wall 420 may be formed after first patterning the fifth insulating layer 510.

[0156] The pixel wall 420 may include a first pixel wall 421 and a second pixel wall 422. The first pixel wall 421 may be formed on the second insulating pattern 512 formed on the unseparated electrode pattern 230, and the second pixel wall 422 may be formed on the third insulating pattern 513 formed on the second electrode 340. Fig. 9 is with Figure 8 The corresponding plan view. Fig. 9 As shown in FIG, the first pixel wall 421 may be disposed to overlap a region of the unseparated electrode pattern 230 in which the first electrode 330 is formed. That is, the first pixel wall 421 may be disposed in a region of each of the pixels PX1, PX2, and PX3.

[0157] In some embodiments, the first pixel wall 421 may also be disposed between the second electrodes 340 adjacent to each other along the second direction D2. Figure 1 The periphery of each of the holes HOL1, HOL2 and HOL3 described (or the periphery of each of the holes HOL1, HOL2 and HOL3 described in reference Figure 1 The first pixel wall 421 is disposed adjacent to the periphery of each of the holes HOL1, HOL2, and HOL3 described above. For example, when the first pixel PX1 includes the second electrode 340, the first pixel wall 421 may be disposed along the edge of the first pixel PX1. As another example, when the first pixel PX1 includes a plurality of second electrodes 340, the first pixel wall 421 may divide the region in which the second electrode 340 is disposed, and may also be disposed between adjacent second electrodes 340.

[0158] That is, the first pixel wall 421 may have the same Figure 1 The described first electrode 330 may have a substantially same or similar plan shape and may include bank holes corresponding to the holes HOL1 , HOL2 , and HOL3 of the first electrode 330 .

[0159] In this case, a light emitting element solution S to be described below may be provided only inside the bank hole, and thus, the manufacturing cost of the light emitting device 10 may be reduced.

[0160] At the same time, Fig. 9 , the bank hole of the first pixel wall 421 is shown to have an octagonal planar shape, but the above configuration is exemplary and the present invention is not limited thereto. For example, the bank hole of the first pixel wall 421 may have a planar shape such as a circular shape, a quadrilateral shape, a hexagonal shape, an elliptical shape, a rectangular shape, etc., within a wider range than the holes HOL1, HOL2, and HOL3 of the first electrode 330.

[0161] Similarly, the second pixel wall 422 has a shape similar to the planar shape of the second electrode 340, but the present invention is not limited thereto. The second pixel wall 422 may be omitted.

[0162] Reference Fig.10 , after forming the pixel wall 420, a light-emitting element solution S including the light-emitting element 350 is loaded on the circuit board 100, and the light-emitting element 350 is disposed between the pixel walls 420 (or between the unseparated electrode pattern 230 and the second electrode 340). Here, the light-emitting element solution S may have a formula such as ink or paste, and may include any one or more of acetone, water, ethanol, and toluene as a solvent. However, the present invention is not limited thereto, and any material that can be evaporated at room temperature or evaporated by heating may be used without any particular limitation.

[0163] In this case, the light emitting element solution S may be in contact with the pixel wall 420, and may maintain a hemispherical shape due to the surface tension of the light emitting element solution S. A force may be applied to a region in which the light emitting element solution S is in contact with the pixel wall 420 in a central direction of the light emitting element solution S, and thus the light emitting element solution S does not overflow from the pixel wall 420. Therefore, the light emitting element 350 may be prevented from moving to another adjacent pixel.

[0164] Reference Fig.11 After the light emitting element 350 is disposed, alternating current (AC) power may be applied, and the light emitting element 350 may be aligned using dielectrophoresis (DEP).

[0165] When the power source V applies power to the unseparated electrode pattern 230 and the second electrode 340, an electric field E may be formed between the unseparated electrode pattern 230 and the second electrode 340. Here, the power source V may be an external power source or an internal power source of the light emitting device 10. The power source V may supply AC power or direct current (DC) power having a predetermined amplitude and period. The DC power may be repeatedly applied to the unseparated electrode pattern 230 and the second electrode 340 so that power having a predetermined amplitude and period may be achieved.

[0166] Bipolarity is induced in the light emitting element 350 under the electric field E, and the light emitting element 350 receives a force with a greater or lesser inclination toward the electric field E due to the DEP force. The light emitting element 350 may be self-aligned between the unseparated electrode pattern 230 and the second electrode 340 due to the DEP force.

[0167] After the light emitting element 350 is aligned, the solvent included in the light emitting element solution S may be evaporated and removed at room temperature or evaporated and removed by heating, so that the light emitting element 350 may be disposed between the unseparated electrode pattern 230 and the second electrode 340 .

[0168] Fig.12 is with Fig.11 In the corresponding plan view, the light emitting elements 350 can be arranged or aligned relatively evenly. Fig. 9 As shown in , the unseparated electrode pattern 230 is not divided for each of the pixels PX1, PX2, and PX3, and has a grid structure as a whole, so the resistance value of the unseparated electrode pattern 230 can be very small compared to the first electrode 330 after being separated into independent electrodes. That is, the voltage drop caused by the unseparated electrode pattern 230 can be very small. Therefore, the power applied to align the light-emitting element 350 can be uniformly applied for each of the pixels PX1, PX2, and PX3, and further can be uniformly applied for each region in the pixel (for example, a region adjacent to each second electrode 340), and a very uniform electric field E can be formed between the unseparated electrode pattern 230 and the second electrode 340. Therefore, the light-emitting element 350 can be relatively uniformly arranged in a uniform direction due to the uniform electric field E, so that the light-emitting efficiency and display quality of the light-emitting device 10 can be improved.

[0169] In an embodiment, the light-emitting element solution S may include at least one type of light-emitting element 350. In order to align the light-emitting elements 350 emitting multiple groups of light having different colors in the pixels PX1, PX2, and PX3 of the light-emitting device 10, the light-emitting element solution S may include the light-emitting elements 350 emitting multiple groups of light having various colors. In addition, the light-emitting elements 350 emitting multiple groups of light having different colors may be mixed in the light-emitting element solution S. However, the present invention is not limited thereto.

[0170] Reference Fig.13 After aligning the light emitting element 350, a plurality of first electrodes 330 are formed by performing a patterning process on the unseparated electrode pattern 230. Figure 5 and Figure 6 When the patterning process of the first electrode 330 is performed by the same process as the process described for forming the second electrode 340, the second inclination angle of the second inclined surface of the first electrode 330 (i.e., the outer surface adjacent to or facing another first electrode) can be basically the same as the first inclination angle of the first inclined surface of the first electrode 330 (i.e., the inner surface adjacent to or facing the second electrode 340).

[0171] However, since the first electrode 330 is formed at a different time point from the time point when the second electrode 340 is formed, environmental factors that cannot be controlled by the process equipment may vary. Therefore, the second inclination angle of the second inclined surface of the first electrode 330 may be different from the first inclination angle of the first inclined surface. In addition, since the second inclined surface of the first electrode 330 is not in direct contact with the light emitting element 350 and does not reflect light, the second inclination angle of the second inclined surface of the first electrode 330 may not need to be limited to the range of the first inclination angle of the first inclined surface. In addition, as the second inclination angle of the second inclined surface of the first electrode 330 decreases, the separation distance between the pixels PX1, PX2 and PX3 increases, and therefore, as the second inclination angle of the second inclined surface of the first electrode 330 increases, the density of the pixels PX1, PX2 and PX3 may increase. Therefore, the second inclination angle of the second inclined surface of the first electrode 330 may be different from the first inclination angle of the first inclined surface, for example, the second inclination angle of the second inclined surface of the first electrode 330 may be greater than the first inclination angle of the first inclined surface.

[0172] like Fig.14 As shown in FIG. 1 , after the first electrode 330 is patterned, a sixth insulating layer 520 and a seventh insulating layer 530 are formed on the light emitting element 350 .

[0173] Afterwards, if Fig.15 As shown in FIG. 5 , the first contact electrode 360 ​​is formed on the first electrode 330 . The first contact electrode 360 ​​is formed to cover the first electrode 330 , and some regions of the first contact electrode 360 ​​may contact the light emitting element 350 and the seventh insulating layer 530 .

[0174] Reference Fig.16, and then, an eighth insulating layer 540 is formed on the first contact electrode 360. The eighth insulating layer 540 may be formed to cover the first contact electrode 360 ​​and expose the second electrode 340. The eighth insulating layer 540 may cover one end of the first contact electrode 360 ​​(i.e., one end in a direction along which the second electrode 340 is disposed) and may expose one side surface of the seventh insulating layer 530 (i.e., one side surface in a direction along which the second electrode 340 is disposed).

[0175] Reference Fig.17 , and then, a second contact electrode 370 is formed on the upper surface of the second electrode 340. The second contact electrode 370 may partially contact the second electrode 340, the light emitting element 350, the seventh insulating layer 530, and the eighth insulating layer 540. The second contact electrode 370 may even be formed on some areas on the upper portion of the eighth insulating layer 540. The second contact electrode 370 may be physically separated from the first contact electrode 360 ​​by the eighth insulating layer 540, and the second contact electrode 370 may be prevented from directly contacting the first contact electrode 360.

[0176] Afterwards, if Fig.18 As shown in , a passivation layer 550 may be formed to cover the eighth insulating layer 540 and the second contact electrode 370 .

[0177] Can refer to Figures 4 to 18 The series of processes described above manufacture the light emitting device 10. In the manufacturing process of the light emitting device 10, all of the first electrode 330 and the second electrode 340 having inclined surfaces can be formed by one mother electrode 210, and therefore, the manufacturing process of the light emitting device 10 can be simplified compared to the manufacturing process of a light emitting device including separate walls, electrodes, reflective electrodes, etc.

[0178] Furthermore, the light emitting element 350 is aligned in a state in which only the second electrode 340 is patterned, and thus, alignment efficiency of the light emitting element 350 and light emitting efficiency and display quality of the light emitting device 10 may be improved.

[0179] Furthermore, the pixel wall 420 is formed to separate not only the pixels PX1 , PX2 , and PX3 but also the respective second electrodes 340 , and therefore, the light emitting element solution S can be prevented from being supplied to unnecessary areas and the manufacturing cost of the light emitting device 10 can be reduced.

[0180] Fig.19 It is shown along Figure 1 A cross-sectional view of an example of a light emitting device taken along line II-II'.

[0181] Reference Figure 1 , Figure 2 and Fig.19, the light emitting device 10_1 may include pixels PX1 , PX2 , and PX3 , and may include a light emitting element layer 300 and a color conversion unit 500 constituting the pixels PX1 , PX2 , and PX3 .

[0182] The pixels PX1, PX2, and PX3 may emit multiple groups of light having different colors. For example, the first pixel PX1 may emit light having a first color L1, the second pixel PX2 may emit light having a second color L2, and the third pixel PX3 may emit light having a third color L3. However, the present invention is not limited thereto, and in some cases, adjacent pixels may emit light having the same color.

[0183] In an embodiment, the central wavelength of the first color L1 is longer than the central wavelength of the second color L2, and the central wavelength of the second color L2 is longer than the central wavelength of the third color L3. For example, the first color L1 may be red having a central wavelength in the range of about 610nm to 650nm, the second color L2 may be green having a central wavelength in the range of about 530nm to 570nm, and the third color L3 may be blue having a central wavelength in the range of about 430nm to 470nm. However, the present invention is not limited thereto, and the first color L1, the second color L2, and the third color L3 are not particularly limited to having different central wavelengths.

[0184] Each of the light emitting element layer 300 and the color conversion unit 500 may include an area overlapping each of the pixels PX1, PX2, and PX3 of the light emitting device 10_1. For ease of description, the area where the light emitting element layer 300 overlaps the first pixel PX1 is defined as a first pixel portion, the area where the light emitting element layer 300 overlaps the second pixel PX2 is defined as a second pixel portion, and the area where the light emitting element layer 300 overlaps the third pixel PX3 is defined as a third pixel portion. Similarly, the area where the color conversion unit 500 overlaps the first pixel PX1 is defined as a first pixel layer, the area where the color conversion unit 500 overlaps the second pixel PX2 is defined as a second pixel layer, and the area where the color conversion unit 500 overlaps the third pixel PX3 is defined as a third pixel layer.

[0185] Since the first to third pixel portions of the light emitting element layer 300 are different from the reference pixel portions Figure 2 The first to third pixel portions of the light emitting element layer 300 of the described light emitting device 10 are substantially the same, so the overlapping description will not be repeated.

[0186] The light emitting element layer 300 may include the light emitting element 350 and emit light of a specific wavelength band, so that the light may be provided to the color conversion unit 500 .

[0187] The color conversion unit 500 may convert light of a specific wavelength band provided from the light emitting element layer 300 into light of another wavelength band. The color conversion unit 500 may include a support substrate 501, a color conversion layer 502, a color filter layer 505, a light blocking member BM, and a planarization layer OC.

[0188] The support substrate 501 may support the color filter layer 505 , the color conversion layer 502 , the light blocking member BM, etc. disposed therebelow. The support substrate 501 may emit light provided from the light emitting element layer 300 to the outside of the light emitting device 10_1 .

[0189] The support substrate 501 may be a transparent insulating substrate. For example, the support substrate 501 may include glass, quartz, or a light-transmitting plastic material, but the present invention is not limited thereto.

[0190] The light blocking member BM may be disposed under the supporting substrate 501. The light blocking member BM may be an area in which the transmission of light provided from the light emitting element layer 300 is substantially blocked. Therefore, mixing of light emitted from the pixel layer may be prevented, and thus, color reproducibility may be improved. The light blocking member BM may be disposed in a predetermined pattern. For example, the light blocking member BM may have a lattice pattern surrounding the pixel layer.

[0191] The light blocking member BM may include a material having a high absorptivity to visible light. For example, the light blocking member BM may include a metal such as chromium, a metal nitride, a metal oxide, or a resin material colored in black, but the present invention is not limited thereto.

[0192] The color conversion layer 502 may convert light incident from the light emitting element layer 300 into light of another wavelength band. For example, when light having a third color L3 (e.g., blue) is incident from the light emitting element layer 300, the color conversion layer 502 may convert the light having the third color L3 (e.g., blue) into light having a second color L2 (e.g., green). However, the present invention is not limited thereto.

[0193] The color conversion layer 502 may be disposed between the light blocking members BM disposed below the support substrate 501 to be spaced apart from each other. However, the present invention is not limited thereto, and a portion of the color conversion layer 502 may be disposed to overlap at least a portion of the light blocking member BM. For example, the color conversion unit 500 may include first to third color conversion layers, which may convert incident light into a plurality of groups of light having different colors and emit the plurality of groups of light.

[0194] The color conversion layer 502 may include color conversion particles 503 that convert incident first light of any wavelength band into light of a wavelength band different from that of the first light. The color conversion particles 503 may be a quantum dot material or a phosphor material.

[0195] In the case where the color conversion particles 503 are quantum dot materials, when a first light of any wavelength band is incident, electrons in the valence band (VB) of the quantum dot material are excited to the conduction band (CB) energy level. While the electrons transition back to the VB, a second light of the wavelength band of the converted light can be emitted. When the color conversion particles 503 are quantum dot materials, the wavelength of the emitted light can be controlled by adjusting the particle size of the quantum dot material. For example, the particle size of the quantum dot material can be about to In the range of , blue light can be incident to emit red light. In addition, the particle size of the quantum dot material can be about to In the range of , blue light can be incident to emit green light. However, the present invention is not limited thereto.

[0196] The color conversion particles 503 may be dispersed in the light-transmitting resin R. Any material may be used as the light-transmitting resin R without any particular limitation as long as the material does not absorb light incident on the color conversion layer 502 and does not affect light absorption and emission of the color conversion particles 503. For example, the light-transmitting resin R may include an organic material such as an epoxy resin, an acrylic resin, etc., but the present invention is not limited thereto. The color conversion layer 502 including the color conversion particles 503 may be formed using various processes such as an inkjet injection method, a photoresist (PR) method, etc., but the present invention is not limited thereto.

[0197] Color filter layer 505 may be disposed between color conversion layer 502 and support substrate 501. Color filter layer 505 may be a layer for determining the color of light incident from light emitting element layer 300 and passing through color conversion layer 502 and finally displayed on pixels PX1, PX2, and PX3 of light emitting device 10.

[0198] The color filter layer 505 can be used as a transmission layer that transmits incident light without changing the color of the incident light. However, the present invention is not limited thereto, and the color filter layer 505 can be a color filter or a wavelength selection filter that transmits the first light of any wavelength band but blocks the second light, the third light, etc. of other wavelength bands.

[0199] The color filter layer 505 may include a transparent organic film and may be used as a color transmission layer for transmitting incident light without changing the color of the incident light. In addition, in order to increase the color purity of the transmitted color, the color filter layer 505 may include a colorant having a color of any wavelength band. The colorant may be dispersed in the transparent organic film of the color filter layer 505. However, the present invention is not limited thereto.

[0200] The color filter layer 505 may include a first color filter layer 551, a second color filter layer 552, and a third color filter layer 553. The first color filter layer 551, the second color filter layer 552, and the third color filter layer 553 may be disposed on the first pixel layer to the third pixel layer. The plurality of groups of light incident on the color conversion layer 502 from each of the pixel portions of the light emitting element layer 300 may have different colors. Therefore, in order to control the color displayed on each of the pixels PX1, PX2, and PX3 of the light emitting device 10_1, the color filter layer 505 may be selectively disposed on the pixel layer.

[0201] For example, the first color filter layer 551 may be disposed on the first pixel layer and may be used as a color transmission layer for transmitting incident light without changing the color of the incident light. The second color filter layer 552 and the third color filter layer 553 may be disposed on the second pixel layer and the third pixel layer, respectively, and may be used as a color filter that transmits only light of a specific wavelength band and blocks or reflects other multiple groups of light. However, the present invention is not limited thereto, and all of the first color filter layer 551, the second color filter layer 552, and the third color filter layer 553 may be used as color filters. For example, the first color filter layer 551 may transmit light having a first color L1 (e.g., red), the second color filter layer 552 may transmit light having a second color L2 (e.g., green), and the third color filter layer 553 may transmit light having a third color L3 (e.g., blue).

[0202] The cap layer CL may be disposed on the outer surface of the color conversion layer 502 to cover and protect the color conversion particles 503, the light-transmitting resin R, etc. The cap layer CL may include an inorganic material. For example, the cap layer CL may include silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiO x N y ), but the present invention is not limited thereto.

[0203] The planarization layer OC may be disposed below the color conversion layer 502, the color filter layer 505, the light blocking member BM, etc. The planarization layer OC may be disposed to cover all members disposed below the support substrate 501. Therefore, the planarization layer OC may planarize the lower surface of the color conversion unit 500 to minimize the step difference caused by the members disposed below the support substrate 501. Since the lower surface of the color conversion unit 500 is planarized by the planarization layer OC, the light emitting device 10 may be manufactured by combining with the light emitting element layer 300 manufactured by a separate process.

[0204] The planarization layer OC may include an organic material. For example, the planarization layer OC may include a thermosetting resin. For example, the planarization layer OC may include at least one selected from the group consisting of cardo resin, polyimide resin, acrylic resin, siloxane resin, and silsesquioxane resin, but the present invention is not limited thereto.

[0205] When the color conversion unit 500 and the light emitting element layer 300 are manufactured and combined by separate processes, the color conversion unit 500 and the light emitting element layer 300 may be combined by the adhesive layer PSI. The adhesive layer PSI may be provided on the upper surface of the light emitting element layer 300 and the surface of the color conversion unit 500 flattened by the flattening layer OC, and the light emitting element layer 300 and the color conversion unit 500 may be combined with each other.

[0206] Any material can be used as the adhesive layer PSI without any particular limitation as long as the material is a type of material that can bond multiple components to be bonded. For example, the adhesive layer PSI can be made of an optically clear adhesive (OCA), an optically clear resin (OCR), a pressure-sensitive adhesive (PSA), etc.

[0207] As reference Fig.19 As described, the light-emitting device 10_1 may include a type of light-emitting element 350, and also include a color conversion unit 500 that implements a first color L1 (e.g., red), a second color L2 (e.g., green), and a third color L3 (e.g., blue), and therefore, the light-emitting device 10_1 may be implemented as a display device that displays an image.

[0208] Fig. 20 It is shown along Figure 1 A cross-sectional view of another example of the light emitting device taken along line II'.

[0209] Reference Figure 1 , Figure 2 and Fig. 20 , Fig. 20 The light emitting device 10_2 is similar to the reference Figure 2 The light emitting device 10 described above is different in that the fourth insulating layer 310_1 has a protruding portion, and the first electrode 330_1 and the second electrode 340_1 are disposed on the protruding portion of the fourth insulating layer 310_1. Figure 2 The light emitting devices 10 are substantially the same or similar. Therefore, overlapping descriptions will not be repeated.

[0210] A protruding portion may be formed in the upper surface of the fourth insulating layer 310_1. Fig. 20As shown in , a portion of the upper surface of the fourth insulating layer 310_1 that overlaps with the second electrode 340_1 (or contacts with the second electrode 340_1) may protrude upward compared to other portions. For example, a portion of the upper surface of the fourth insulating layer 310_1 may protrude upward from an edge of the lower surface of the second electrode 340_1 along a closed loop located inside the second electrode 340_1 by the thickness of the second electrode 340_1. The thickness of the protruding portion of the fourth insulating layer 310_1 is not limited, but may be, for example, or or larger.

[0211] Similarly, a portion of the upper surface of the fourth insulating layer 310_1 overlapping the first electrode 330_1 may protrude upward compared to other portions. For example, a portion of the upper surface of the fourth insulating layer 310_1 may protrude upward from an edge of the lower surface of the first electrode 330_1 along a closed loop located inside the first electrode 330_1 by the thickness of the first electrode 330_1.

[0212] The first electrode 330_1 and the second electrode 340_1 may be the same as the reference electrode 330_1 and the second electrode 340_1 except for the thickness of the first electrode 330_1 and the second electrode 340_1. Figure 2 The first electrode 330 and the second electrode 340 are described to be substantially the same. Therefore, overlapping descriptions will not be repeated.

[0213] The protrusion is formed in the upper surface of the fourth insulating layer 310_1, and thus, the thickness of the first electrode 330_1 and the thickness of the second electrode 340_1 may be relatively reduced. Figure 2 The thickness of the first electrode 330 and the thickness of the second electrode 340 shown in FIG. And the thickness of the protruding portion of the fourth insulating layer 310_1 is about hour, Fig. 20 The thickness of the first electrode 330_1 and the thickness of the second electrode 340_1 shown in FIG. 3 may be approximately

[0214] Due to the protruding portion of the fourth insulating layer 310_1, the first electrode 330_1 and the second electrode 340_1 may have inclined surfaces. Therefore, the first electrode 330_1 and the second electrode 340_1 having inclined surfaces with a specific inclination angle (eg, an angle of 60 degrees or less) may be more easily formed.

[0215] As reference Fig. 20 As described, a protrusion may be formed in the upper surface of the fourth insulating layer 310_1 (or the circuit board 100 ), in which case the first electrode 330_1 and the second electrode 340_1 having a cone angle sufficient to reflect light emitted from the side surface of the light emitting element 350 may be more easily formed.

[0216] Fig.21 is a plan view showing a light emitting device according to another embodiment. Fig. 22 yes Fig.21 Magnified view of area AA.

[0217] Reference Figure 1 , Fig.21 and Fig. 22 , the light emitting device 10_3 may include a first pixel PX1_1, a second pixel PX2_1, and a third pixel PX3_1. Since the first pixel PX1_1, the second pixel PX2_1, and the third pixel PX3_1 are substantially identical to each other, common characteristics of the first pixel PX1_1, the second pixel PX2_1, and the third pixel PX3_1 will be described based on the first pixel PX1_1.

[0218] The first pixel PX1_1 and the reference Figure 1 The first pixel PX1 described above is different in that the first pixel PX1_1 includes a first electrode 330_2 and a second electrode 340_2. In addition to the shapes of the first electrode 330_2 and the second electrode 340_2, the first electrode 330_2 and the second electrode 340_2 may be the same as the first electrode 330_2 and the second electrode 340_2. Figure 1 and Figure 2 The first electrode 330 and the second electrode 340 are described as being substantially the same or similar. Therefore, overlapping descriptions will not be repeated.

[0219] and Figure 1 Similar to the second electrode 340 shown in FIG. 1 , a plurality of second electrodes 340_2 may be provided, and three second electrodes 340_2 may be provided in the first pixel PX1_1. The above configuration is exemplary, and the present invention is not limited thereto. For example, one second electrode 340_2, two second electrodes 340_2, or four or more second electrodes 340_2 may be included in the first pixel PX1_1.

[0220] like Fig. 22 As shown in FIG, the second electrode 340_2 may include a central portion 340a, a first peripheral portion 340b, and a first connection portion 340c.

[0221] The center portion 340a may have a circular planar shape and may have a specific area or a specific size. The center portion 340a may have a larger area than the reference Figure 1 The contact hole 319_2 (or the fifth contact hole) is described as having a larger plane area.

[0222] The first peripheral portion 340b may be spaced apart from the central portion 340a to extend along the outer surface of the central portion 340a and may have both ends spaced apart from each other. For example, the first peripheral portion 340b may have a planar shape of an inverted C shape or a ring shape in which a portion is cut.

[0223] The first connection portion 340c may connect the central portion 340a to the first peripheral portion 340b. The first connection portion 340c may extend from the central portion 340a in a specific direction (eg, the first direction D1) to be connected to the first peripheral portion 340b.

[0224] Meanwhile, the first electrode 330_2 may have a shape corresponding to the second electrode 340_2 , may be spaced apart from the second electrode 340_2 , and may surround the entire second electrode 340_2 .

[0225] The first electrode 330_2 may include a main body portion 330a having a hole therein, a second peripheral portion 330b disposed in the hole, and a second connection portion 330c extending from the main body portion 330a and connected to the second peripheral portion 330b. The second electrode 340_2 may be disposed in the hole of the main body portion 330a. The second peripheral portion 330b may be disposed between the central portion 340a and the first peripheral portion 340b of the second electrode 340_2. The second peripheral portion 330b may be spaced apart from the central portion 340a of the second electrode 340_2 to extend along the outer surface of the central portion 340a, and may have two ends spaced apart from each other, with the first connection portion 340c of the second electrode 340_2 disposed between the two ends. The second peripheral portion 330b may have a planar shape that is the same as or similar to the planar shape of the first peripheral portion 340b. The second connection portion 330c may pass through the area between the two ends of the first peripheral portion 340b of the second electrode 340_2 and extend, and may connect the second peripheral portion 330b to the main body portion 330a.

[0226] The first electrode 330_2 may be spaced apart from the second electrode 340_2 by a predetermined interval along an edge of the second electrode 340_2. The light emitting element 350 may be disposed between the first electrode 330_2 and the second electrode 340_2 (or in a space between the first electrode 330_2 and the second electrode 340_2).

[0227] like Fig. 22 As shown in , the light emitting device 10_3 may have a region in which the light emitting elements 350 formed in three concentric circles are arranged. Therefore, the density and arrangement efficiency of the light emitting elements 350 may be improved, and the light emitting characteristics (eg, maximum brightness) of the light emitting device 10_3 may be improved.

[0228] At the same time, Fig.21 and Fig. 22 , the shape of the first electrode 330_2 (or the shape of the second peripheral portion 330b) and the shape of the second electrode 340_2 (or the shape of the central portion 340a, the shape of the first peripheral portion 340b) are shown as having a ring shape, but the present invention is not limited thereto. For example, the outermost portion of the first peripheral portion 340b of the second electrode 340_2 may have a shape such as a polygonal shape (such as a triangular shape, a rectangular shape, a hexagonal shape, an octagonal shape, etc.) or an elliptical shape. The shape of the second electrode 340_2 is not limited to a specific shape as long as the shape is an island shape that is independently provided from other electrodes.

[0229] Fig.23 It is shown along Fig. 22 A cross-sectional view of an example of the light emitting device taken along line III-III'.

[0230] Reference Figure 2 and Figure 21 to Figure 23 , in addition to the Fig.23 In addition to the number of light emitting elements 350 in the light emitting device 10_3, Fig.23 The light emitting device 10_3 can be used with Figure 2 Therefore, overlapping descriptions will not be repeated.

[0231] like Fig. 22 and Fig.23 As shown in FIG. 3 , three light emitting elements 350 may be disposed between an edge of the second electrode 340_2 and a center of a region of the second electrode 340_2 .

[0232] Reference Fig.23 , from left to right, the first electrode 330_2 (or the main part 330a), the second electrode 340_2 (or the first peripheral part 340b), the first electrode 330_2 (or the second peripheral part 330b) and the second electrode 340_2 (or the central part 340a) can be arranged sequentially, and the light emitting element 350 can be arranged between the above components.

[0233] The structure of the light emitting portion between the main body portion 330a and the first peripheral portion 340b may be similar to Figure 2 The structure of the light emitting element layer 300 shown in FIG. 1 is the same as that of the light emitting element layer 300 shown in FIG. 1 , and the structure of the light emitting portion between the first peripheral portion 340 b and the second peripheral portion 330 b may be the same as that of the light emitting element layer 300 shown in FIG. 1 . Figure 2 The structure of the light emitting element layer 300 shown in FIG. 3 is the same as the structure in which the left and right sides are reversed, and the structure of the light emitting portion between the second peripheral portion 330b and the central portion 340a may be the same as Figure 2 The structure of the light emitting element layer 300 shown in FIG.

[0234] Fig.24 It is shown along Fig. 22 A cross-sectional view of another example of the light emitting device taken along line III-III'.

[0235] Reference Figure 21 to Figure 24 , Fig.24 The light emitting device 10_4 and Fig.23 The light emitting device 10_3 is different in that the light emitting device 10_4 does not include the second pixel wall 422 .

[0236] In the light-emitting device 10_4, the light-emitting elements 350 (or a large number of light-emitting elements 350) having a relatively high density are disposed over the entire pixel region (e.g., the region in which the first pixel PX1 is disposed), and therefore, there may be no need for the second pixel wall 422. In this case, the light-emitting element solution S including the light-emitting elements 350 may be disposed in the space formed by the first pixel wall 421 over the pixel region.

[0237] At the end of the detailed description, it will be appreciated by those skilled in the art that many variations and modifications may be made to the preferred embodiments without departing substantially from the principles of the invention. Therefore, the disclosed preferred embodiments of the invention are used in a general and descriptive sense only and not for purposes of limitation.

Claims

1. A light-emitting device, comprising: substrate; a first electrode disposed on the substrate, including a hole, and having an inclined surface formed along a periphery of the hole; second electrodes disposed on the substrate, and each second electrode is disposed in one of the holes of the first electrode; a light emitting element disposed between the first electrode and the second electrode and electrically connected to the first electrode and the second electrode; as well as a first insulating layer provided on a lower surface of a corresponding light emitting element among the light emitting elements between the first electrode and the second electrode, The first electrode includes a first metal bonding layer, a metal conductive layer disposed on the first metal bonding layer, and a second metal bonding layer disposed on the metal conductive layer. The metal conductive layer has a thickness greater than that of the first metal bonding layer and greater than that of the second metal bonding layer, The inclined surface is formed on the metal conductive layer, and The first insulating layer extends from the lower surface of the corresponding light emitting element to cover a corresponding inclined surface among the inclined surfaces.

2. The light emitting device according to claim 1, further comprising: a transistor electrically connected to the first electrode; as well as A power line is electrically connected to the second electrode.

3. The light emitting device according to claim 2, wherein: The power line is disposed below the substrate, and Each of the second electrodes is electrically connected to the power line through a through hole that penetrates the substrate to expose the power line.

4. The light emitting device according to claim 1, wherein: The metal conductive layer includes a reflective material, and Light emitted from the light emitting element is reflected by the metal conductive layer.

5. The light emitting device according to claim 1, wherein: An inclination angle formed by the inclined surface based on the substrate is less than 60 degrees and greater than 20 degrees.

6. The light emitting device according to claim 5, wherein: The first taper angle of the inner side wall of the metal conductive layer is different from the second taper angle of the outer side wall of the metal conductive layer, and The inner sidewall of the metal conductive layer is adjacent to the second electrode.

7. The light emitting device according to claim 6, wherein: The inner sidewall of the metal conductive layer is formed by a process different from a process of forming the outer sidewall of the metal conductive layer.

8. The light emitting device according to claim 1, further comprising a first pixel wall disposed on the first electrode, in, The first pixel wall includes a bank hole corresponding to the hole. 9 . The light emitting device according to claim 8 , further comprising a second pixel wall disposed on each of the second electrodes.

10. The light emitting device according to claim 1, wherein: Each of the second electrodes includes a central portion, a first peripheral portion that is spaced apart from the central portion, extends along an edge of the central portion, and has two ends that are spaced apart from each other, and a first connecting portion configured to connect the central portion to the first peripheral portion, and The first electrode includes a main body portion, a second peripheral portion, and a second connecting portion, the main body portion including the hole, the second peripheral portion extending along the edge of the central portion between the central portion and the first peripheral portion and having two ends with the first connecting portion interposed therebetween, the second connecting portion passing through an area between the ends of the first peripheral portion to connect the second peripheral portion to the main body portion.

11. The light emitting device according to claim 10, wherein: The central portion has a circular plan shape, and In a plan view, each of the first peripheral portion and the second peripheral portion has a ring shape in which a portion is cut.

12. The light emitting device according to claim 1, further comprising: an organic insulating layer configured to cover the light emitting elements and expose both end portions of each of the light emitting elements; a first contact electrode electrically connected to the first electrode, disposed on the organic insulating layer and in contact with a first end portion of each of the light emitting elements; as well as A second contact electrode, electrically connected to the second electrode, is provided on the organic insulating layer and is in contact with a second end portion of each of the light emitting elements.

13. The light emitting device according to claim 12, wherein: The first contact electrode and the second contact electrode face each other and are disposed to be spaced apart from each other, and The light emitting device further includes a second insulating layer covering the first contact electrode and the second contact electrode and disposed in a region where the first contact electrode is spaced apart from the second contact electrode.

14. The light emitting device according to claim 13, wherein: The first contact electrode and the second contact electrode are arranged to be coplanar.

15. The light emitting device according to claim 12, wherein: Each of the light emitting elements has a cylindrical shape, and A portion of a lower surface of each of the light emitting elements is in direct contact with the first insulating layer.

16. A method for manufacturing a light emitting device, the method comprising the following steps: forming an electrode layer on a substrate; patterning the electrode layer and forming first pixel electrodes and unseparated electrode patterns, the first pixel electrodes being independently arranged from each other, and the unseparated electrode patterns surrounding the first pixel electrodes; forming an insulating layer on the unseparated electrode pattern and the first pixel electrode and patterning the insulating layer to form a first insulating layer; disposing a light emitting element on the first insulating layer between the unseparated electrode pattern and the first pixel electrode; forming an electric field between the unseparated electrode pattern and the first pixel electrode and aligning the light emitting element; as well as patterning the unseparated electrode pattern and forming a second pixel electrode including a hole, the second pixel electrode surrounding at least one of the first pixel electrodes and having an inclined surface formed along a periphery of the hole, The second pixel electrode includes a first metal bonding layer, a metal conductive layer disposed on the first metal bonding layer, and a second metal bonding layer disposed on the metal conductive layer. The metal conductive layer has a thickness greater than that of the first metal bonding layer and greater than that of the second metal bonding layer, and The inclined surfaces are formed on the metal conductive layer, and the first insulating layer extends from a lower surface of a corresponding one of the light emitting elements to cover a corresponding one of the inclined surfaces.

17. The method according to claim 16, wherein: The unseparated electrode pattern has a grid structure.

18. The method according to claim 16, wherein: The step of forming the first pixel electrode and the unseparated electrode pattern further includes forming a first insulating layer, the first insulating layer being disposed on the first pixel electrode and the unseparated electrode pattern and between the first pixel electrode and the unseparated electrode pattern, and The light emitting element is disposed on the first insulating layer.

19. The method according to claim 18, wherein: The step of forming the first pixel electrode and the unseparated electrode pattern further includes forming a first pixel wall on the first insulating layer, and In a plan view, the first pixel wall overlaps the unseparated electrode pattern and surrounds each of the first pixel electrodes.

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