A multi-electrode semiconductor laser packaging structure

Abstract

The present invention discloses a multi-electrode semiconductor laser packaging structure, which belongs to the field of laser technology, and includes a multi-electrode semiconductor laser chip and a heat sink; the multi-electrode semiconductor laser chip includes a plurality of chip areas; the chip area includes a chip area positive electrode and a chip area negative electrode; the heat sink includes a negative electrode metallization layer and a plurality of mutually insulated positive electrode metallization layers; the plurality of positive electrode metallization layers correspond one-to-one to the chip area positive electrodes of the plurality of chip areas, and the chip area positive electrodes are attached to the corresponding positive electrode metallization layers; the chip area negative electrodes of the plurality of chip areas are electrically connected to the negative electrode metallization layers. The multi-electrode semiconductor laser packaging structure of the present invention can meet the requirements of injecting currents of different sizes into different electrodes, and short circuits will not occur between different electrode pairs, thereby realizing the functions of the multi-electrode semiconductor laser chip, having good heat dissipation performance, and being stable and reliable.

Description

Technical Field

[0001] The invention belongs to the field of laser technology, and in particular relates to a multi-electrode semiconductor laser packaging structure. Background Art

[0002] Semiconductor lasers have the advantages of high electro-optical efficiency, long life, and high reliability. They have broad application prospects in the fields of material processing, military defense, communications, medical treatment, and beauty. Semiconductor laser chips are the core of semiconductor lasers. Traditional semiconductor laser chips usually have only one pair of electrodes. The chip can be soldered on a heat sink substrate using a flip-chip packaging structure to achieve its function. Compared with traditional semiconductor laser chips, multi-electrode semiconductor laser chips have the characteristics of good beam quality and high brightness, and have excellent application prospects. However, for multi-electrode semiconductor laser chips, since there are more than two pairs of electrodes, that is, the negative electrode is shared and the positive electrodes are insulated, if the traditional semiconductor laser chip packaging structure is used, a short circuit will occur between different electrode pairs of the multi-electrode semiconductor laser chip, and separate electrical injection cannot be performed, that is, different currents are injected into different electrodes, which ultimately leads to the inability to achieve its function. When working, due to the limitation of electro-optical efficiency, part of the injected power of high-power semiconductor lasers will be dissipated in the form of heat. If the heat dissipation is insufficient, the beam quality of the semiconductor laser will also deteriorate. Summary of the invention

[0003] The purpose of the present invention is to provide a multi-electrode semiconductor laser packaging structure to address the above shortcomings, and to solve the problems that the existing multi-electrode semiconductor laser chip cannot be separated into electrical injections and has insufficient heat dissipation performance. To achieve the above purpose, the present invention provides the following technical solutions:

[0004] A multi-electrode semiconductor laser packaging structure includes a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 includes a plurality of chip regions 3; the chip region 3 includes a chip region positive electrode 4 and a chip region negative electrode 5; the heat sink 2 includes a negative electrode metallization layer 6 and a plurality of mutually insulated positive electrode metallization layers 7; the plurality of positive electrode metallization layers 7 correspond to the chip region positive electrodes 4 of the plurality of chip regions 3 one by one, and the chip region positive electrodes 4 are attached to the corresponding positive electrode metallization layers 7; the chip region negative electrodes 5 of the plurality of chip regions 3 are electrically conductive with the negative electrode metallization layers 6. As can be seen from the above structure, the multi-electrode semiconductor laser chip 1 includes a plurality of chip regions 3, and the multi-electrode semiconductor laser chip 1 can have a plurality of electrically insulating spacing grooves to divide itself into a plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are shared, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip area 3 can realize different functions and requires different current injections. The heat sink 2 includes a negative electrode metallization layer 6 and a plurality of mutually insulated positive electrode metallization layers 7; the plurality of positive electrode metallization layers 7 correspond one to one with the chip area positive electrodes 4 of the plurality of chip areas 3, that is, each chip area positive electrode 4 is electrically connected to a positive electrode metallization layer 7, and the chip area positive electrode 4 can be welded, bonded or sintered on the positive electrode metallization layer 7; the plurality of positive electrode metallization layers 7 are mutually insulated; the chip area negative electrodes 5 of the plurality of chip areas 3 are electrically connected to the negative electrode metallization layer 6; in this way, different currents can be injected into the positive electrodes 4 of different chip areas, and short circuits will not occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separate electric injection can be realized to realize its function. The area of ​​the negative electrode metallization layer 6 is larger than the chip area negative electrode 5, which improves the heat dissipation efficiency of the chip area negative electrode 5, and the area of ​​the positive electrode metallization layer 7 is larger than the chip area positive electrode 4, which improves the heat dissipation efficiency of the chip area positive electrode 4 and the withstand current of the positive electrode metallization layer 7. Good heat dissipation leads to better beam quality of multi-electrode semiconductor lasers.

[0005] Furthermore, the chip area negative electrode 5 and the negative electrode metallization layer 6 of the plurality of chip areas 3 are connected via a plurality of electrode leads 8. As can be seen from the above structure, the negative electrode metallization layer 6 and the corresponding chip area negative electrode 5 are connected via a plurality of electrode leads 8, and a plurality of electrode leads 8 increase the connection reliability and the withstand current.

[0006] Furthermore, the heat sink 2 also includes a substrate 9; the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 are arranged on the top surface of the substrate 9; the top surface of the chip area 3 is the chip area negative electrode 5, and the bottom surface is the chip area positive electrode 4. From the above structure, it can be seen that the substrate 9 can be an insulating ceramic, and the heat of the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 is dissipated through the substrate 9 with stronger heat dissipation capacity, thereby improving the heat dissipation efficiency. Since the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 are arranged on the top surface of the substrate 9, the overall size of the multi-electrode semiconductor laser is smaller in the height direction, saving space in the height direction, and is larger in the width and length directions, which is convenient for accelerating heat dissipation.

[0007] Furthermore, a first insulating gap 10 is provided between several positive electrode metallization layers 7. As can be seen from the above structure, the first insulating gap 10 insulates and disconnects the adjacent positive electrode metallization layers 7 to avoid short circuit. The multi-electrode semiconductor laser chip 1 can have several electrically insulating spacing grooves to divide itself into several chip areas 3, and the electrically insulating spacing grooves correspond to the first insulating gaps 10, so that several positive electrode metallization layers 7 correspond to the chip area positive electrodes 4 of several chip areas 3, that is, each chip area positive electrode 4 is electrically conductive with a positive electrode metallization layer 7, and the chip area positive electrode 4 can be welded, bonded or sintered on the positive electrode metallization layer 7; an insulating convex strip can be provided on one of the first insulating gaps 10, and the insulating convex strip can cooperate with the electrically insulating spacing groove, so that the multi-electrode semiconductor laser chip 1 can be quickly positioned with the negative electrode metallization layer 6 and the positive electrode metallization layer 7.

[0008] Furthermore, a second insulating gap 11 is provided between the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7. As can be seen from the above structure, the second insulating gap 11 insulates and disconnects the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 to avoid short circuit.

[0009] Furthermore, solder is pre-set on several positive electrode metallization layers 7. As can be seen from the above structure, solder is pre-set on the positive electrode metallization layer 7, so that the chip area positive electrode 4 of the chip area 3 can be welded on the positive electrode metallization layer 7, and the positive electrode metallization layer 7 with a larger area accelerates heat dissipation.

[0010] Furthermore, the size of the positive electrode metallization layer 7 exceeds the size of the chip area positive electrode 4 of the corresponding chip area 3. From the above structure, it can be seen that the area of ​​the positive electrode metallization layer 7 is larger than the size of the chip area positive electrode 4 of the corresponding chip area 3, which improves the heat dissipation efficiency of the chip area positive electrode 4 and the withstand current of the positive electrode metallization layer 7.

[0011] Furthermore, the substrate 9 is provided with a plurality of mutually parallel through holes 13; a piezoelectric blower is provided on one end side of the through hole 13. As can be seen from the above structure, the piezoelectric blower blows air toward the through hole 13, and the substrate 9 with the through hole 13 has a large heat dissipation area and a strong heat dissipation capacity, so that the multi-electrode semiconductor laser chip 1 can quickly dissipate heat.

[0012] Furthermore, grid plates 14 are fixed on both sides of the substrate 9; the grid plates 14 extend beyond the top surface of the multi-electrode semiconductor laser chip 1. As can be seen from the above structure, grid plates 14 are fixed on both sides of the substrate 9, which increases the heat dissipation area of ​​the substrate 9, improves the heat dissipation capacity, and does not increase the space size. Moreover, the gap on the grid plates 14 allows the pins of the negative electrode metallization layer 6 or the positive electrode metallization layer 7 to be led out. The grid plates 14 extend beyond the top surface of the multi-electrode semiconductor laser chip 1, which protects the multi-electrode semiconductor laser chip 1.

[0013] The beneficial effects of the present invention are:

[0014] The present invention discloses a multi-electrode semiconductor laser packaging structure, which belongs to the field of laser technology, and includes a multi-electrode semiconductor laser chip and a heat sink; the multi-electrode semiconductor laser chip includes a plurality of chip areas; the chip area includes a chip area positive electrode and a chip area negative electrode; the heat sink includes a negative electrode metallization layer and a plurality of mutually insulated positive electrode metallization layers; the plurality of positive electrode metallization layers correspond one-to-one to the chip area positive electrodes of the plurality of chip areas, and the chip area positive electrodes are attached to the corresponding positive electrode metallization layers; the chip area negative electrodes of the plurality of chip areas are electrically connected to the negative electrode metallization layers. The multi-electrode semiconductor laser packaging structure of the present invention can meet the requirements of injecting currents of different sizes into different electrodes, and short circuits will not occur between different electrode pairs, thereby realizing the functions of the multi-electrode semiconductor laser chip, having good heat dissipation performance, and being stable and reliable. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a schematic diagram of the top view of the structure of embodiments one and two;

[0016] Figure 2 yes Figure 1 A schematic diagram of the front view structure of

[0017] Figure 3 is a front view structural schematic diagram of embodiment 3;

[0018] Figure 4 It is a schematic diagram of the three-dimensional structure of embodiments one and two;

[0019] In the attached drawings: 1-multi-electrode semiconductor laser chip, 2-heat sink, 3-chip area, 4-positive electrode of chip area, 5-negative electrode of chip area, 6-negative electrode metallization layer, 7-positive electrode metallization layer, 8-electrode lead, 9-substrate, 10-first insulating gap, 11-second insulating gap, 13-through hole, 14-grid. DETAILED DESCRIPTION

[0020] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific implementation methods, but the present invention is not limited to the following embodiments.

[0021] Embodiment 1:

[0022] See attached Figures 1-2 4. A multi-electrode semiconductor laser packaging structure, comprising a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip regions 3; the chip region 3 comprises a chip region positive electrode 4 and a chip region negative electrode 5; the heat sink 2 comprises a negative electrode metallization layer 6 and a plurality of mutually insulated positive electrode metallization layers 7; the plurality of positive electrode metallization layers 7 correspond one-to-one to the chip region positive electrodes 4 of the plurality of chip regions 3, and the chip region positive electrodes 4 are attached to the corresponding positive electrode metallization layers 7; the chip region negative electrodes 5 of the plurality of chip regions 3 are electrically conductive with the negative electrode metallization layers 6. As can be seen from the above structure, the multi-electrode semiconductor laser chip 1 comprises a plurality of chip regions 3, and the multi-electrode semiconductor laser chip 1 may have a plurality of electrically insulating spacing grooves to divide itself into a plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are shared, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip area 3 can realize different functions and requires different current injections. The heat sink 2 includes a negative electrode metallization layer 6 and a plurality of mutually insulated positive electrode metallization layers 7; the plurality of positive electrode metallization layers 7 correspond one to one with the chip area positive electrodes 4 of the plurality of chip areas 3, that is, each chip area positive electrode 4 is electrically connected to a positive electrode metallization layer 7, and the chip area positive electrode 4 can be welded, bonded or sintered on the positive electrode metallization layer 7; the plurality of positive electrode metallization layers 7 are mutually insulated; the chip area negative electrodes 5 of the plurality of chip areas 3 are electrically connected to the negative electrode metallization layer 6; in this way, different currents can be injected into the positive electrodes 4 of different chip areas, and short circuits will not occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separate electric injection can be realized to realize its function. The area of ​​the negative electrode metallization layer 6 is larger than the chip area negative electrode 5, which improves the heat dissipation efficiency of the chip area negative electrode 5, and the area of ​​the positive electrode metallization layer 7 is larger than the chip area positive electrode 4, which improves the heat dissipation efficiency of the chip area positive electrode 4 and the withstand current of the positive electrode metallization layer 7. Good heat dissipation leads to better beam quality of multi-electrode semiconductor lasers.

[0023] Embodiment 2:

[0024] See attached Figures 1-2 4. A multi-electrode semiconductor laser packaging structure, comprising a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip regions 3; the chip region 3 comprises a chip region positive electrode 4 and a chip region negative electrode 5; the heat sink 2 comprises a negative electrode metallization layer 6 and a plurality of mutually insulated positive electrode metallization layers 7; the plurality of positive electrode metallization layers 7 correspond one-to-one to the chip region positive electrodes 4 of the plurality of chip regions 3, and the chip region positive electrodes 4 are attached to the corresponding positive electrode metallization layers 7; the chip region negative electrodes 5 of the plurality of chip regions 3 are electrically conductive with the negative electrode metallization layers 6. As can be seen from the above structure, the multi-electrode semiconductor laser chip 1 comprises a plurality of chip regions 3, and the multi-electrode semiconductor laser chip 1 may have a plurality of electrically insulating spacing grooves to divide itself into a plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are shared, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip area 3 can realize different functions and requires different current injections. The heat sink 2 includes a negative electrode metallization layer 6 and a plurality of mutually insulated positive electrode metallization layers 7; the plurality of positive electrode metallization layers 7 correspond one to one with the chip area positive electrodes 4 of the plurality of chip areas 3, that is, each chip area positive electrode 4 is electrically connected to a positive electrode metallization layer 7, and the chip area positive electrode 4 can be welded, bonded or sintered on the positive electrode metallization layer 7; the plurality of positive electrode metallization layers 7 are mutually insulated; the chip area negative electrodes 5 of the plurality of chip areas 3 are electrically connected to the negative electrode metallization layer 6; in this way, different currents can be injected into the positive electrodes 4 of different chip areas, and short circuits will not occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separate electric injection can be realized to realize its function. The area of ​​the negative electrode metallization layer 6 is larger than the chip area negative electrode 5, which improves the heat dissipation efficiency of the chip area negative electrode 5, and the area of ​​the positive electrode metallization layer 7 is larger than the chip area positive electrode 4, which improves the heat dissipation efficiency of the chip area positive electrode 4 and the withstand current of the positive electrode metallization layer 7. Good heat dissipation leads to better beam quality of multi-electrode semiconductor lasers.

[0025] The chip area negative electrode 5 and the negative electrode metallization layer 6 of several chip areas 3 are connected through several electrode leads 8. From the above structure, it can be seen that the negative electrode metallization layer 6 and the corresponding chip area negative electrode 5 are connected through several electrode leads 8, and multiple electrode leads 8 increase the connection reliability and improve the withstand current.

[0026] The heat sink 2 also includes a substrate 9; the negative electrode metallization layer 6 and a plurality of positive electrode metallization layers 7 are arranged on the top surface of the substrate 9; the top surface of the chip area 3 is the chip area negative electrode 5, and the bottom surface is the chip area positive electrode 4. From the above structure, it can be seen that the substrate 9 can be an insulating ceramic, and the heat of the negative electrode metallization layer 6 and a plurality of positive electrode metallization layers 7 is dissipated through the substrate 9 with stronger heat dissipation ability, thereby improving the heat dissipation efficiency. Since the negative electrode metallization layer 6 and a plurality of positive electrode metallization layers 7 are arranged on the top surface of the substrate 9, the overall size of the multi-electrode semiconductor laser is smaller in the height direction, saving space in the height direction, and is larger in the width and length directions, which is convenient for accelerating heat dissipation.

[0027] A first insulating gap 10 is provided between several positive electrode metallization layers 7. As can be seen from the above structure, the first insulating gap 10 insulates and disconnects the adjacent positive electrode metallization layers 7 to avoid short circuit. The multi-electrode semiconductor laser chip 1 can have several electrically insulating spacing grooves to divide itself into several chip areas 3, and the electrically insulating spacing grooves correspond to the first insulating gaps 10, so that several positive electrode metallization layers 7 correspond to the chip area positive electrodes 4 of several chip areas 3, that is, each chip area positive electrode 4 is electrically conductive with a positive electrode metallization layer 7, and the chip area positive electrode 4 can be welded, bonded or sintered on the positive electrode metallization layer 7; an insulating convex strip can be provided on one of the first insulating gaps 10, and the insulating convex strip can cooperate with the electrically insulating spacing groove, so that the multi-electrode semiconductor laser chip 1 can be quickly positioned with the negative electrode metallization layer 6 and the positive electrode metallization layer 7.

[0028] A second insulating gap 11 is provided between the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7. As can be seen from the above structure, the second insulating gap 11 insulates and disconnects the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 to avoid short circuit.

[0029] Solder is pre-placed on several positive electrode metallization layers 7. As can be seen from the above structure, solder is pre-placed on the positive electrode metallization layer 7, so that the chip area positive electrode 4 of the chip area 3 can be welded on the positive electrode metallization layer 7, and the positive electrode metallization layer 7 with a larger area accelerates heat dissipation.

[0030] The size of the positive electrode metallization layer 7 exceeds the size of the chip area positive electrode 4 of the corresponding chip area 3. From the above structure, it can be seen that the area of ​​the positive electrode metallization layer 7 is larger than the size of the chip area positive electrode 4 of the corresponding chip area 3, which improves the heat dissipation efficiency of the chip area positive electrode 4 and the withstand current of the positive electrode metallization layer 7.

[0031] Embodiment three:

[0032] See attached Figure 3. A multi-electrode semiconductor laser packaging structure, comprising a multi-electrode semiconductor laser chip 1 and a heat sink 2; the multi-electrode semiconductor laser chip 1 comprises a plurality of chip regions 3; the chip region 3 comprises a chip region positive electrode 4 and a chip region negative electrode 5; the heat sink 2 comprises a negative electrode metallization layer 6 and a plurality of mutually insulated positive electrode metallization layers 7; the plurality of positive electrode metallization layers 7 correspond one-to-one to the chip region positive electrodes 4 of the plurality of chip regions 3, and the chip region positive electrodes 4 are attached to the corresponding positive electrode metallization layers 7; the chip region negative electrodes 5 of the plurality of chip regions 3 are electrically conductive with the negative electrode metallization layers 6. As can be seen from the above structure, the multi-electrode semiconductor laser chip 1 comprises a plurality of chip regions 3, and the multi-electrode semiconductor laser chip 1 may have a plurality of electrically insulating spacing grooves to divide itself into a plurality of chip regions 3, each chip region 3 has a chip region positive electrode 4 and a chip region negative electrode 5, the chip region negative electrodes 5 of the plurality of chip regions 3 are shared, and the chip region positive electrodes 4 of the plurality of chip regions 3 are spaced apart from each other. Each chip area 3 can realize different functions and requires different current injections. The heat sink 2 includes a negative electrode metallization layer 6 and a plurality of mutually insulated positive electrode metallization layers 7; the plurality of positive electrode metallization layers 7 correspond one to one with the chip area positive electrodes 4 of the plurality of chip areas 3, that is, each chip area positive electrode 4 is electrically connected to a positive electrode metallization layer 7, and the chip area positive electrode 4 can be welded, bonded or sintered on the positive electrode metallization layer 7; the plurality of positive electrode metallization layers 7 are mutually insulated; the chip area negative electrodes 5 of the plurality of chip areas 3 are electrically connected to the negative electrode metallization layer 6; in this way, different currents can be injected into the positive electrodes 4 of different chip areas, and short circuits will not occur between different electrode pairs of the multi-electrode semiconductor laser chip 1, and separate electric injection can be realized to realize its function. The area of ​​the negative electrode metallization layer 6 is larger than the chip area negative electrode 5, which improves the heat dissipation efficiency of the chip area negative electrode 5, and the area of ​​the positive electrode metallization layer 7 is larger than the chip area positive electrode 4, which improves the heat dissipation efficiency of the chip area positive electrode 4 and the withstand current of the positive electrode metallization layer 7. Good heat dissipation leads to better beam quality of multi-electrode semiconductor lasers.

[0033] The chip area negative electrode 5 and the negative electrode metallization layer 6 of several chip areas 3 are connected through several electrode leads 8. From the above structure, it can be seen that the negative electrode metallization layer 6 and the corresponding chip area negative electrode 5 are connected through several electrode leads 8, and multiple electrode leads 8 increase the connection reliability and improve the withstand current.

[0034] The heat sink 2 also includes a substrate 9; the negative electrode metallization layer 6 and a plurality of positive electrode metallization layers 7 are arranged on the top surface of the substrate 9; the top surface of the chip area 3 is the chip area negative electrode 5, and the bottom surface is the chip area positive electrode 4. From the above structure, it can be seen that the substrate 9 can be an insulating ceramic, and the heat of the negative electrode metallization layer 6 and a plurality of positive electrode metallization layers 7 is dissipated through the substrate 9 with stronger heat dissipation ability, thereby improving the heat dissipation efficiency. Since the negative electrode metallization layer 6 and a plurality of positive electrode metallization layers 7 are arranged on the top surface of the substrate 9, the overall size of the multi-electrode semiconductor laser is smaller in the height direction, saving space in the height direction, and is larger in the width and length directions, which is convenient for accelerating heat dissipation.

[0035] A first insulating gap 10 is provided between several positive electrode metallization layers 7. As can be seen from the above structure, the first insulating gap 10 insulates and disconnects the adjacent positive electrode metallization layers 7 to avoid short circuit. The multi-electrode semiconductor laser chip 1 can have several electrically insulating spacing grooves to divide itself into several chip areas 3, and the electrically insulating spacing grooves correspond to the first insulating gaps 10, so that several positive electrode metallization layers 7 correspond to the chip area positive electrodes 4 of several chip areas 3, that is, each chip area positive electrode 4 is electrically conductive with a positive electrode metallization layer 7, and the chip area positive electrode 4 can be welded, bonded or sintered on the positive electrode metallization layer 7; an insulating convex strip can be provided on one of the first insulating gaps 10, and the insulating convex strip can cooperate with the electrically insulating spacing groove, so that the multi-electrode semiconductor laser chip 1 can be quickly positioned with the negative electrode metallization layer 6 and the positive electrode metallization layer 7.

[0036] A second insulating gap 11 is provided between the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7. As can be seen from the above structure, the second insulating gap 11 insulates and disconnects the negative electrode metallization layer 6 and the plurality of positive electrode metallization layers 7 to avoid short circuit.

[0037] Solder is pre-placed on several positive electrode metallization layers 7. As can be seen from the above structure, solder is pre-placed on the positive electrode metallization layer 7, so that the chip area positive electrode 4 of the chip area 3 can be welded on the positive electrode metallization layer 7, and the positive electrode metallization layer 7 with a larger area accelerates heat dissipation.

[0038] The size of the positive electrode metallization layer 7 exceeds the size of the chip area positive electrode 4 of the corresponding chip area 3. From the above structure, it can be seen that the area of ​​the positive electrode metallization layer 7 is larger than the size of the chip area positive electrode 4 of the corresponding chip area 3, which improves the heat dissipation efficiency of the chip area positive electrode 4 and the withstand current of the positive electrode metallization layer 7.

[0039] The substrate 9 is provided with a plurality of mutually parallel through holes 13; a piezoelectric blower is provided at one end side of the through hole 13. As can be seen from the above structure, the piezoelectric blower blows air toward the through hole 13, and the substrate 9 with the through hole 13 has a large heat dissipation area and a strong heat dissipation capacity, so that the multi-electrode semiconductor laser chip 1 can quickly dissipate heat.

[0040] Grid plates 14 are fixed on both sides of the substrate 9; the grid plates 14 extend beyond the top surface of the multi-electrode semiconductor laser chip 1. As can be seen from the above structure, grid plates 14 are fixed on both sides of the substrate 9, which increases the heat dissipation area of ​​the substrate 9, improves the heat dissipation capacity, and does not increase the space size. In addition, the gap on the grid plates 14 allows the pins of the negative metallization layer 6 or the positive metallization layer 7 to be led out. The grid plates 14 extend beyond the top surface of the multi-electrode semiconductor laser chip 1, which protects the multi-electrode semiconductor laser chip 1.

[0041] The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A multi-electrode semiconductor laser packaging structure, characterized in that: The invention comprises a multi-electrode semiconductor laser chip (1) and a heat sink (2); the multi-electrode semiconductor laser chip (1) comprises a plurality of chip regions (3); the chip region (3) comprises a chip region positive electrode (4) and a chip region negative electrode (5); the heat sink (2) comprises a negative electrode metallization layer (6) and a plurality of mutually insulated positive electrode metallization layers (7); the plurality of positive electrode metallization layers (7) correspond one-to-one to the chip region positive electrodes (4) of the plurality of chip regions (3), and the chip region positive electrodes (4) are attached to the corresponding positive electrode metallization layers (7); the chip region negative electrodes (5) and the negative electrode metallization layers (6) of the plurality of chip regions (3) are electrically conductive; the chip region negative electrodes (5) and the negative electrode metallization layers (6) of the plurality of chip regions (3) are connected via a plurality of electrode leads (8); the heat sink (2) further comprises a substrate (9) ; the negative electrode metallization layer (6) and a plurality of positive electrode metallization layers (7) are arranged on the top surface of the substrate (9); the top surface of the chip area (3) is the chip area negative electrode (5), and the bottom surface is the chip area positive electrode (4); a first insulating gap (10) is arranged between the plurality of positive electrode metallization layers (7); a second insulating gap (11) is arranged between the negative electrode metallization layer (6) and the plurality of positive electrode metallization layers (7); the size of the positive electrode metallization layer (7) exceeds the size of the chip area positive electrode (4) of the corresponding chip area (3); a plurality of mutually parallel through holes (13) are arranged on the substrate (9); a piezoelectric blower is arranged on one end side of the through hole (13); grid plates (14) are fixed on both sides of the substrate (9); the grid plates (14) extend beyond the top surface of the multi-electrode semiconductor laser chip (1).

2. A multi-electrode semiconductor laser packaging structure according to claim 1, characterized in that: Solder is pre-placed on a plurality of positive electrode metallization layers (7).

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