Sensor device and semiconductor device

Abstract

Provided is a semiconductor device including a light-emitting element and a sensor element and having flexibility. The semiconductor device includes a sensor device, a processor, and a communication device. The sensor device has a first pixel and a second pixel formed on a flexible substrate. The first pixel includes a light-emitting element and a first transistor, and the second pixel includes a sensor element having a photoelectric conversion function and a second transistor. The light emitted from the light-emitting element has a peak wavelength. The wavelength range detected by the sensor element includes the peak wavelength. The semiconductor layers of the first transistor and the second transistor contain the same elements, and the pixel electrode of the light-emitting element has a function of being electrically connected to the first transistor and can block diffused light to the sensor element.

Description

Technical Field

[0001] One aspect of the present invention relates to a sensor device and a semiconductor device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. One aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, as an example of the technical field of one aspect of the present invention disclosed in this specification, semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, imaging devices, communication devices, driving methods of these devices, or manufacturing methods of these devices can be cited.

[0003] Note that in this specification and the like, a semiconductor device refers to all devices that can operate by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one aspect of a semiconductor device. In addition, a storage device, a display device, an imaging device, a communication device, and an electronic device sometimes include a semiconductor device. Background Art

[0004] Techniques for forming transistors using an oxide semiconductor film formed on a substrate have attracted attention. For example, Patent Document 1 discloses an imaging device having a structure in which a transistor having a very low off-state current including an oxide semiconductor is used for a pixel circuit.

[0005] [Prior Art Documents]

[0006] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-119711 Summary of the Invention

[0008] Technical Problem to be Solved by the Invention

[0009] Imaging devices are used not only as means for visualizing visible light images but also for various purposes. For example, they are used for personal identification, defect analysis, medical diagnosis, security purposes, etc. In these applications, in addition to visible light, short-wavelength light such as X-rays and long-wavelength light such as infrared rays are used depending on the application.

[0010] As one of the medical diagnostic methods for preventing or managing lifestyle diseases, a biological monitor using light having a peak wavelength in the infrared region of 700 nm or more has been proposed.

[0011] As an example, it is known that if the state of continuously high blood glucose levels persists, diabetes is likely to cause various complications. Methods for managing blood glucose levels by monitoring glucose values in the blood have been proposed. The glucose value in the blood has an absorption peak in the wavelength region of 700 nm or more. If a bulb-type lamp or an LED is used as a light source that emits light in this wavelength region, there will be a problem of the device becoming large. In addition, since the light irradiated onto the object becomes reflected light that is scattered on the top surface and inside of the object, the detection accuracy of the sensor decreases. Therefore, it is required that the sensor for detecting this reflected light improve the detection accuracy by increasing the light-receiving area (sensor area).

[0012] Therefore, one of the objects of one aspect of the present invention is to provide a novel semiconductor device. Another object of one aspect of the present invention is to provide a novel sensor device. Another object of one aspect of the present invention is to provide a sensor device having a thin light source and a thin sensor. Another object of one aspect of the present invention is to provide a sensor device having a thin light source and a sensor, wherein the sensor detects light emitted from the light source and reflected by the subject. In addition, one of the objects of one aspect of the present invention is to provide a sensor device having a light-emitting element that emits light with a peak wavelength of 700 nm or more.

[0013] Note that the description of these objects does not preclude the existence of other objects. Note that one aspect of the present invention does not need to achieve all of the above objects. Objects other than the above are obvious from the description in the specification, drawings, claims, etc., and can be extracted from the description.

[0014] Means for Solving the Technical Problem

[0015] One aspect of the present invention relates to a semiconductor device having a sensor device.

[0016] One aspect of the present invention is a semiconductor device including a sensor device, a processor, and a communication device. The sensor device includes a first pixel and a second pixel formed on a substrate. The first pixel includes a light-emitting element and a first transistor. The second pixel includes a sensor element having a photoelectric conversion function and a second transistor. The light emitted from the light-emitting element has a peak wavelength, and the wavelength range detected by the sensor element includes this peak wavelength. The semiconductor layers of the first transistor and the second transistor contain the same elements. The pixel electrode included in the light-emitting element has a function of being electrically connected to the first transistor and a function of shielding diffused light from the sensor element. The processor calculates the light detected by the sensor element. The communication device is a semiconductor device that transmits the calculation result.

[0017] Another aspect of the present invention is a sensor device including a first pixel and a second pixel formed on a substrate. The first pixel includes a light-emitting element and a first transistor. The second pixel includes a sensor element having a photoelectric conversion function and a second transistor. The light emitted from the light-emitting element has a peak wavelength, and the wavelength range detected by the sensor element includes the peak wavelength. The semiconductor layers of the first transistor and the second transistor contain the same elements. The pixel electrode included in the light-emitting element is a sensor device having a function of being electrically connected to the first transistor and a function of shielding diffused light to the sensor element.

[0018] The substrate may also be flexible.

[0019] The peak wavelength of the light-emitting element is preferably 700 nm or more and 9000 nm or less.

[0020] Preferably, the light-emitting element includes a first organic compound and a common layer, and the sensor element includes a second organic compound and the common layer.

[0021] Preferably, there is an area between the first pixel and the second pixel that does not include a conductive layer.

[0022] Preferably, the first transistor and the second transistor contain a metal oxide in the semiconductor layer, and the metal oxide contains In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). In addition, the first transistor or the second transistor preferably includes a back gate.

[0023] Advantages of the Invention

[0024] One aspect of the present invention can provide a novel semiconductor device. In addition, a novel sensor device can be provided. In addition, a sensor device having a thin light source and a thin sensor can be provided. In addition, a sensor device having a thin light source and a sensor can be provided, in which the sensor detects light emitted from the light source and reflected by a subject. Furthermore, a sensor device having a light-emitting element that emits light with a peak wavelength of 700 nm or more can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a block diagram illustrating a semiconductor device.

[0026] Figure 2 is a block diagram illustrating a semiconductor device.

[0027] Figure 3A is a circuit diagram illustrating a pixel array. Figure 3B1 and Figure 3B2 is a circuit diagram illustrating a pixel.

[0028] Figure 4A is a circuit diagram illustrating a pixel array.Figure 4B is a circuit diagram illustrating pixels. Figure 4C1 and Figure 4C2 are circuit diagrams illustrating circuit 46 and circuit 46a, respectively.

[0029] Figure 5 is a diagram illustrating a sensor device.

[0030] Figure 6 is a diagram illustrating a sensor device.

[0031] Figure 7 is a diagram illustrating a sensor device.

[0032] Figure 8A and Figure 8B is a diagram illustrating a sensor device.

[0033] Figures 9A to 9C is a cross-sectional view showing an example of a sensor device.

[0034] Figures 10A to 10C is a cross-sectional view showing an example of a sensor device.

[0035] Figures 11A to 11C is a cross-sectional view showing an example of a sensor device.

[0036] Figure 12A and Figure 12B is a cross-sectional view showing an example of a sensor device.

[0037] Figure 13A and Figure 13B is a cross-sectional view showing an example of a sensor device.

[0038] Figure 14A and Figure 14B is a cross-sectional view showing an example of a sensor device.

[0039] Figure 15 is a cross-sectional view showing an example of a sensor device.

[0040] Figures 16A to 16D is a diagram illustrating an electronic device.

[0041] Figures 17A to 17C is a diagram illustrating an electronic device. Detailed Description

[0042] The embodiments will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following description, and it is easily understandable to those of ordinary skill in the art that the embodiments and details of the present invention can be changed into various forms without departing from its spirit and scope. Therefore, the present invention should not be construed as being limited only to the content described in the embodiments shown below. Note that in the structure of the invention described below, the same reference numerals are used in different drawings to denote the same parts or parts having the same functions, and the repeated description thereof is omitted. Note that sometimes the shading of the same constituent elements is appropriately omitted or changed in different drawings.

[0043] Hereinafter, the embodiments will be described with reference to the accompanying drawings. However, the embodiments can be implemented in multiple different ways, and it is easily understandable to those of ordinary skill in the art that the ways and details thereof can be changed into various forms without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited only to the content described in the embodiments shown below.

[0044] In addition, in the drawings, for the sake of clear illustration, the sizes, thicknesses of layers, or regions are sometimes exaggeratedly described. Therefore, the present invention is not limited to the dimensions in the drawings. Furthermore, in the drawings, ideal examples are schematically shown, and are not limited to the shapes, numerical values, etc. shown in the drawings.

[0045] In addition, the ordinal numbers such as "first", "second", "third", etc. used in this specification are attached for the convenience of identifying constituent elements, and are not for limiting in terms of the number.

[0046] In this specification, for convenience, the phrases such as "upper" and "lower" indicating the arrangement are used to describe the positional relationship of the constituent elements with reference to the drawings. In addition, the positional relationship of the constituent elements is appropriately changed according to the directions for describing each constituent element. Therefore, it is not limited to the phrases described in the specification, and the phrases can be appropriately changed according to the circumstances.

[0047] In this specification and the like, a transistor refers to an element including at least three terminals: a gate, a drain, and a source. The transistor has a channel formation region between the drain (drain terminal, drain region, or drain electrode) and the source (source terminal, source region, or source electrode), and current can flow between the source and the drain through the channel region. Note that in this specification and the like, the channel formation region refers to the region where current mainly flows.

[0048] In addition, in the case of using transistors with different polarities or when the current direction changes during the operation of the circuit, etc., the functions of the source and the drain sometimes swap with each other. Therefore, in this specification and the like, the source and the drain can swap with each other.

[0049] In addition, in this specification and the like, "electrically connected" includes cases where connection is made via "a substance having a certain electrical effect". Here, there are no particular limitations on the "element having a certain electrical effect" as long as it can transfer electrical signals between the connection targets. For example, the "element having a certain electrical effect" includes not only electrodes and wirings formed of different conductive layers, but also switching elements such as transistors, resistive elements, inductors, capacitors, and other elements having various functions.

[0050] In this specification and the like, "parallel" means a state where the angle formed by two straight lines is -10° or more and 10° or less. Therefore, it also includes a state where the angle is -5° or more and 5° or less. In addition, "perpendicular" means a state where the angle between two straight lines is 80° or more and 100° or less. Therefore, it also includes a state where the angle is 85° or more and 95° or less.

[0051] In this specification and the like, "film" and "layer" can be interchanged. For example, sometimes "conductive layer" can be interchanged with "conductive film". In addition, sometimes "insulating film" can be changed to "insulating layer".

[0052] In addition, in this specification and the like, unless otherwise specified, the off-state current refers to the drain current when the transistor is in the off state (also referred to as the non-conducting state, cut-off state). Unless otherwise specified, in an n-channel transistor, the off state means a state where the voltage Vgs between the gate and the source is lower than the threshold voltage Vth, and in a p-channel transistor, the off state means a state where the voltage Vgs between the gate and the source is higher than the threshold voltage Vth. For example, the off-state current of an n-channel transistor sometimes refers to the drain current when the voltage Vgs between the gate and the source is lower than the threshold voltage Vth.

[0053] The off-state current of a transistor sometimes depends on Vgs. Therefore, "the off-state current of the transistor is I or less" sometimes means that there is a value of Vgs that makes the off-state current of the transistor I or less. The off-state current of a transistor sometimes refers to: the off-state current in the off state when Vgs is a predetermined value; the off-state current in the off state when Vgs is a value within a predetermined range; or the off-state current in the off state when Vgs is a value that can obtain a sufficiently low off-state current, etc.

[0054] As an example, consider an n-channel transistor with a threshold voltage Vth of 0.5V, a drain current of 1×10 -9 A when Vgs is 0.5V, and a drain current of 1×10 -13 A when Vgs is 0.1V, and a drain current of 1×10 -19A. When Vgs is -0.8V, the drain current is 1×10 -22 A. When Vgs is -0.5V or in the range of Vgs from -0.5V to -0.8V, the drain current of this transistor is 1×10 -19 A or less. Therefore, sometimes the off-state current of this transistor is said to be 1×10 -19 A or less. Since there is a Vgs value for which the drain current of this transistor is 1×10 -22 A or less, sometimes the off-state current of this transistor is said to be 1×10 -22 A or less.

[0055] In this specification and the like, sometimes the off-state current of a transistor having a channel width W is represented by the current value per channel width W. Additionally, sometimes the off-state current of a transistor having a channel width is represented by the current value per a predetermined channel width (e.g., 1μm). In the latter case, the unit of the off-state current is sometimes represented by a unit having a dimension of current / length (e.g., A / μm).

[0056] The off-state current of a transistor sometimes depends on temperature. In this specification, unless otherwise specified, the off-state current sometimes represents the off-state current at room temperature, 60°C, 85°C, 95°C, or 125°C. Or, sometimes it represents the off-state current at a temperature that ensures the reliability of a semiconductor device including this transistor, etc., or at a temperature at which a semiconductor device including this transistor is used (e.g., any temperature in the range of 5°C to 35°C). "The off-state current of a transistor is I or less" sometimes means that there exists a value of Vgs at room temperature, 60°C, 85°C, 95°C, 125°C, at a temperature that ensures the reliability of a semiconductor device including this transistor, etc., or at a temperature at which a semiconductor device including this transistor is used (e.g., any temperature in the range of 5°C to 35°C) such that the off-state current of the transistor becomes I or less.

[0057] The off-state current of a transistor sometimes depends on the voltage Vds between the drain and the source. In this specification, unless otherwise specified, the off-state current sometimes refers to the off-state current when Vds is 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, or 20V. Alternatively, it sometimes refers to the off-state current when Vds ensures the reliability of a semiconductor device including the transistor or when Vds is used in a semiconductor device including the transistor. "The off-state current of the transistor is I or less" sometimes means that there exists a value of Vgs such that the off-state current of the transistor becomes I or less under Vds of 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, 20V, Vds that ensures the reliability of the semiconductor device including the transistor, or Vds used in a semiconductor device including the transistor.

[0058] In the above description of the off-state current, the drain can be interchanged with the source. That is, the off-state current sometimes refers to the current flowing through the source when the transistor is in the off state.

[0059] In this specification and the like, the off-state current is sometimes denoted as the leakage current. In this specification and the like, the off-state current sometimes refers to the current flowing between the source and the drain when the transistor is in the off state.

[0060] Note that voltage refers to the difference between the potentials of two points, while potential refers to the electrostatic energy (potential energy) possessed by a unit charge at a certain point in an electrostatic field. Note that generally, the potential difference between the potential of a certain point and a standard potential (such as the ground potential) is simply referred to as potential or voltage, and in many cases, potential and voltage are synonyms. Therefore, in this specification, unless otherwise specified, both "potential" can be referred to as "voltage", and "voltage" can be referred to as "potential".

[0061] (Embodiment 1)

[0062] In this embodiment, a semiconductor device according to one aspect of the present invention will be described.

[0063] The semiconductor device includes a sensor device, a processor, a memory, a battery, and a communication device. The sensor device includes a first region and a second region formed on a substrate. Note that the substrate can also be flexible. A plurality of first pixels are arranged in a matrix in the first region, and a plurality of second pixels are arranged in a matrix in the second region. The first pixel includes a light-emitting element and a first transistor. The second pixel includes a sensor element having a photoelectric conversion function and a second transistor.

[0064] The semiconductor layers of the first transistor and the second transistor contain the same elements.

[0065] The light emitted by the light-emitting element has a peak wavelength, and the wavelength range detected by the sensor element includes this peak wavelength. The peak wavelength of the light-emitting element is preferably 700 nm or more and 9000 nm or less.

[0066] Here, the case where the semiconductor device using one embodiment of the present invention detects or inspects an object will be described. When the object (such as a material) has the property of absorbing light within an inherent wavelength range, the light-emitting element preferably includes a peak wavelength within this inherent wavelength range. The object absorbs the light having this peak wavelength when reflecting or transmitting the irradiated light. When the sensor element detects the reflected light or transmitted light from the object part, the sensor element can detect the light having this peak wavelength. In addition, the object sometimes absorbs light within a plurality of different wavelength ranges. Therefore, the light-emitting element preferably emits light having peak wavelengths within different wavelength ranges. Furthermore, the sensor element preferably can detect the light having peak wavelengths within this different wavelength range. By detecting the light having peak wavelengths within different wavelength ranges, the object can be correctly detected or inspected.

[0067] As an example, it is known that glucose in a vein has a first wavelength range that easily absorbs light with a wavelength of 1600 nm and its vicinity, and a second wavelength range that easily absorbs light with a wavelength of 6000 nm to 9000 nm. Therefore, by having the sensor element detect the reflected light of the light irradiated onto the vein, the amount of glucose in the vein can be detected. The reflected light detected by the sensor element is calculated in the processor and converted into a blood glucose value. The communication device can send this conversion result to a mobile information terminal such as a server, a personal computer, or a smartphone via a network.

[0068] As another example, light with a wavelength of 760 nm and its vicinity is easily absorbed by hemoglobin in a vein. Therefore, by receiving reflected light from a palm or a finger and imaging it, the position of the vein can be detected. This effect can be used for biometric identification. In addition, non-destructive inspections such as detecting foreign substances in food or analyzing defects in industrial products can also be performed using infrared light with an appropriate wavelength.

[0069] The light-emitting element can achieve a thin light source by including a first organic compound and a common layer. In addition, the sensor element can achieve a thin sensor by including a second organic compound and this common layer.

[0070] Note that since the light-emitting element and the sensor element are formed on the same substrate, it is preferable to provide a region or layer having a light-shielding function between the light-emitting element and the sensor element. More preferably, a region not including a conductive layer is provided between the first region and the second region in order to reduce diffuse reflection caused by the conductive layer.

[0071] Next, a semiconductor device according to one embodiment of the present invention will be described with reference to the accompanying drawings.

[0072] One embodiment of the present invention is a sensor device including a light-emitting element. The sensor element receives light emitted by the light-emitting element and reflected by an object. By using an organic light-emitting element as the light-emitting element and an organic sensor element as the sensor element, a thin sensor device with an attached light source is formed. Note that the sensor element has a photoelectric conversion function.

[0073] Figure 1 FIG. is a block diagram illustrating a semiconductor device according to one embodiment of the present invention. The semiconductor device 10 includes a sensor device 20, a processor 11, a memory 12, a battery 13, a communication device 14, and an image processing circuit 15. The sensor device 20 includes a region 30 and a region 40.

[0074] The image processing circuit 15 can control the driving timing of the sensor device 20. The processor 11 can calculate the detection data detected by the sensor device 20 and supply the calculation result to the communication device 14. The communication device 14 can send the calculation result to the server 90 via the network 91. Note that the communication device 14 can also be sent to a portable information terminal such as a smartphone or a personal computer via the network 91.

[0075] The region 30 includes a light-emitting region 31, a circuit 32 (gate driver), and a circuit 33 (source driver). The light-emitting region 31 includes a plurality of first pixels, and the plurality of first pixels are arranged in a matrix. Note that in Figure 3A , Figure 3B1 and Figure 3B2 the first pixel will be described in detail. The circuit 32 can select a plurality of first pixels. The circuit 33 can supply emission data to the first pixels selected by the circuit 32 according to the emission intensity of the light-emitting element.

[0076] The region 40 includes a sensor region 41, a circuit 42 (row driver), a circuit 43 (analog-to-digital conversion), and a circuit 44 (column driver). The sensor region 41 includes a plurality of second pixels, and the plurality of second pixels are arranged in a matrix. Note that in Figure 4A , Figure 4B , Figure 4C1 and Figure 4C2 the second pixel will be described in detail. The circuit 42 can select a plurality of second pixels. The sensor element included in the second pixel can convert light into a voltage of an analog signal through the photoelectric conversion function. The circuit 43 converts the analog signal detected by the second pixel into a digital signal as detection data. The circuit 44 can supply the detection data to the image processing circuit 15. The image processing circuit 15 can supply the detection data to the processor 11.

[0077] Figure 2It is a block diagram showing a semiconductor device 10 having a sensor device 20a with different structures. The sensor device 20a includes a light-emitting region 31a, a light-emitting region 31b, a sensor region 41a, a sensor region 41b, and a sensor region 41c. The circuits 32 and 33 can drive the light-emitting region 31a and the light-emitting region 31b, and the circuits 42 and 43 can drive the sensor region 41a, the sensor region 41b, and the sensor region 41c.

[0078] The light-emitting region 31a can emit light having a peak wavelength different from that of the light-emitting region 31b. Alternatively, the light-emitting region 31a can also emit light having the same peak wavelength as that of the light-emitting region 31b.

[0079] The sensor region 41a can detect a wavelength region different from that of the sensor region 41b or the sensor region 41c. For example, the sensor region 41a can detect light having the peak wavelength emitted by the light-emitting region 31a. In addition, the sensor region 41c can detect light having the peak wavelength emitted by the light-emitting region 31b. The sensor region 41b can detect either light having the peak wavelength emitted by the light-emitting region 31a or light having the peak wavelength emitted by the light-emitting region 31b. Alternatively, the sensor region 41b can detect both light having the peak wavelength emitted by the light-emitting region 31a and light having the peak wavelength emitted by the light-emitting region 31b.

[0080] As described above, a sensor device including a light source that emits light having a plurality of different peak wavelengths and a sensor region that detects light having a plurality of different peak wavelengths is suitable for appropriately detecting an object having an absorption band in different wavelength regions, such as glucose. For example, when the object to be detected is glucose, it includes a first wavelength range that absorbs light having a wavelength of 1600 nm and its vicinity and a second wavelength range that absorbs light having a wavelength of 6000 nm to 9000 nm. However, it is known that the absorption intensities in each wavelength region are different. That is, by comparing or operating the first detection data measured in the first wavelength range and the second detection data measured in the second wavelength range, the glucose value or the content ratio of the object can be detected more accurately.

[0081] Figure 3AIt is a circuit diagram of the pixel array included in the display area 30. The area 30 includes a light-emitting area 31, a circuit 32, and a circuit 33. The light-emitting area 31 includes pixels 35(1, 1) to pixels 35(m, n) arranged in a matrix, wirings G1(1) to wirings G1(n), wirings G2(1) to wirings G2(n), and wirings S1(1) to wirings S1(m). The circuit 32 includes a shift register 32a, a plurality of selector circuits 32b, wirings SR1(1) to wirings SR1(n), wirings SR2(1) to wirings SR2(n), a wiring SEL, and a wiring EN. Note that m and n are integers of 2 or more. The shift register 32a may be constituted by a decoding circuit.

[0082] Each pixel 35 is electrically connected to the wiring G1, the wiring G2, and the wiring S1.

[0083] The shift register 32a is electrically connected to the wiring G1 through the wiring SR1. The wiring SEL is electrically connected to the first input terminal of the selector circuit 32b. The shift register 32a is electrically connected to the second input terminal of the selector circuit 32b through the wiring SR2. The wiring EN is electrically connected to the third input terminal of the selector circuit 32b. The output terminal of the selector circuit 32b is electrically connected to the wiring G2.

[0084] The signal supplied to the wiring SEL can supply, as the output signal of the selector circuit 32b to the wiring G2, one of the signals supplied to the second input terminal and the third input terminal of the selector circuit 32b. The signal supplied to the second input terminal is the output signal of the shift register 32a supplied to the wiring SR2. The signal supplied to the third input terminal is the signal supplied to the wiring EN. As an example, when a signal "L" is supplied to the wiring SEL, the selector circuit 32b can output the output signal of the shift register 32a to the wiring G2. When a signal "H" is supplied to the wiring SEL, the selector circuit 32b can output the signal supplied to the wiring EN to the wiring G2.

[0085] Note that when a signal "H" is supplied to the wiring SEL, the signal supplied to the wiring EN is output to the wirings G2(1) to G2(n) simultaneously. Therefore, the pixels 35(1, 1) to pixels 35(m, n) can be made to emit light or turn off the light simultaneously. That is, light that emits instantaneously, such as the light of a camera flash, can be generated. Note that the light-emitting intensity of the pixels 35(1, 1) to pixels 35(m, n) is determined by the light-emitting data supplied to each pixel 35 through the wirings S1(1) to S1(m).

[0086] Figure 3B1The pixel 35 is illustrated using a circuit diagram. The pixel 35 includes transistors 51 to 54, a capacitor 55, and a light-emitting element 56. A wiring G1 is electrically connected to the gates of the transistor 51 and the transistor 54. A wiring G2 is electrically connected to the gate of the transistor 52. A wiring S1 is connected to one of the source and drain of the transistor 51. The other of the source and drain of the transistor 51 is electrically connected to one of the source and drain of the transistor 52 and one electrode of the capacitor 55. The other of the source and drain of the transistor 52 is electrically connected to the gate of the transistor 53. One of the source and drain of the transistor 53 is electrically connected to a wiring 61. The other of the source and drain of the transistor 53 is connected to one electrode of the light-emitting element 56, one electrode of the transistor 54, and the other electrode of the capacitor 55. The other of the source and drain of the transistor 54 is electrically connected to a wiring 62. The other electrode of the light-emitting element 56 is electrically connected to a wiring 63.

[0087] The signal supplied to the wiring G1 can control the on or off state of the transistor 51 and the transistor 54. The transistor 51 is used as a selection switch of the pixel. In addition, during the period when the transistor 51 is on, the transistor 54 can supply the potential supplied to the wiring 62 to the other electrode of the capacitor 55. Note that the potential supplied to the wiring 62 is preferably a potential that does not cause the light-emitting element 56 to emit light. In addition, during the period when the potential of the other of the source and drain of the transistor 53 is fixed by the potential supplied to the wiring 62, one electrode of the capacitor 55 is supplied with light-emission data through the wiring S1. Note that the gate of the transistor 54 can also be connected to a different wiring G3. By providing the wiring G3, the on or off state of the transistor 51 and the transistor 54 can be controlled at different timings.

[0088] The signal supplied to the wiring G2 can control the timing of supplying the light-emission data held by the capacitor 55 to the gate of the transistor 53. Note that it is preferable to supply a potential same as the potential of the other of the source and drain of the transistor 53 to the gate of the transistor 53 before supplying the light-emission data to the capacitor 55.

[0089] OS transistors including metal oxides in the semiconductor layer can be used for the transistors 51 to 54. The OS transistor has a characteristic of extremely low off-state current. By using the OS transistor for the transistors 51 to 54, the period during which the capacitor 55 holds the charge can be made very long.

[0090] In addition, the transistor 53 may also include a semiconductor layer different from that of the transistor 51. For example, the transistor 53 may also be an Si transistor including Si in the semiconductor layer. As the Si transistor, a transistor containing amorphous silicon, a transistor containing crystalline silicon (typically low-temperature polysilicon, single-crystalline silicon, etc.) can be cited. When the transistor 53 is an Si transistor, the light emission intensity of the light-emitting element 56 can be easily increased. Furthermore, when the transistor 51 is an OS transistor, since the off-state current is small, the period during which the capacitor 55 can hold the charge can be made extremely long.

[0091] As another example, the transistor 53 may also include a semiconductor layer different from that of the transistor 51. The transistor 51 may also be an Si transistor including Si in the semiconductor layer. When the transistor 51 is an Si transistor, the responsiveness of the selection switch can be improved. Furthermore, when the transistor 53 is an OS transistor, the channel length of the transistor can be reduced. By reducing the channel length of the transistor, the size of the pixel can be reduced. That is, the resolution of the light-emitting region 31 can be improved.

[0092] When the transistor 53 includes a semiconductor layer different from that of the transistor 51 as described above, the transistor 52 or the transistor 54 may also be an OS transistor. When the transistor 52 is an OS transistor, the off-state current is small, so it can be used as a switch to reduce the current leakage of the light-emitting data held by the capacitor 55 to the gate of the transistor 53. Thereby, the light emission of the light-emitting element 56 caused by the leakage current can be suppressed. In addition, when the transistor 54 is an OS transistor, the off-state current is small, so it can be used as a switch to suppress the change in the light emission intensity of the light-emitting element 56 caused by the leakage current passing through the transistor 54.

[0093] As another example, when the transistor 53 includes a semiconductor layer different from that of the transistor 51, the transistor 52 or the transistor 54 may also be an Si transistor. By being an Si transistor, the responsiveness of the switch is improved. In addition, by reducing the channel length and channel width of the transistor, the parasitic capacitance of the transistor can be reduced, and the resolution of the light-emitting region 31 can be improved.

[0094] Figure 3B2 An example is shown in which the transistors 51a to 54a in the pixel 35a include a back gate. The back gate is electrically connected to the gate of each transistor. However, the connection object of the back gate is not limited. It can be electrically connected to the source of the transistor, and the back gates of multiple transistors can also be connected to other wirings and the multiple transistors are uniformly controlled by the wiring.

[0095] Figure 4AUse a circuit diagram to illustrate the pixel array included in region 40. Region 40 includes a sensor region 41, circuits 42, 43, 44, and 46. The sensor region 41 includes pixels 45(1, 1) to 45(m, n) configured in a matrix, wirings SE(1) to SE(n), and wirings S2(1) to S2(m). A circuit 46 is provided for each wiring S2. Alternatively, one circuit 46 may be provided for multiple wirings S2.

[0096] The pixel 45 is electrically connected to the wiring SE and the wiring S2. The pixel 45 is electrically connected to the circuit 46 through the wiring S2. The circuit 46 is electrically connected to the circuit 43. The circuit 43 is electrically connected to the circuit 44. The circuit 44 is electrically connected to the image processing circuit 15.

[0097] The circuit 42 is used as a row decoder and preferably includes either a decoder or a shift register. The circuit 42 can select any pixel 45 through the wiring SE. Each pixel 45 includes a sensor element. The sensor element converts incident light into a voltage of analog data through photoelectric conversion. That is, the pixel 45 can convert light into a voltage and supply it as output data to the circuit 46.

[0098] The circuit 46 is a source follower circuit for supplying the output data of the circuit 45 to the circuit 43. The circuit 43 performs correlated double sampling processing on the supplied output data through the source follower circuit. Furthermore, the circuit 43 has a function of converting the output data subjected to the correlated double sampling processing into digital data. The circuit 44 can transfer the digital data to the image processing circuit 15. The circuit 44 is used as a column decoder.

[0099] Figure 4B Use a circuit diagram to illustrate the pixel 45. Note that the pixel 45 is electrically connected to the wirings 64 to 67.

[0100] The pixel 45 includes transistors 71 to 75, capacitors 76, capacitor 77, and sensor element 78. Wiring PR is electrically connected to the gate of transistor 71. Wiring Tx is electrically connected to the gate of transistor 72. Wiring W is electrically connected to the gate of transistor 73. Wiring SE is electrically connected to the gate of transistor 75. One of the source and drain of transistor 71 is electrically connected to one of the source and drain of transistor 72 and one electrode of capacitor 76. The other of the source and drain of transistor 71 is electrically connected to wiring 64. The other of the source and drain of transistor 72 is electrically connected to one electrode of sensor element 78. The other electrode of sensor element 78 is electrically connected to wiring 65. The other electrode of capacitor 76 is electrically connected to one of the source and drain of transistor 73, the gate of transistor 74, and one electrode of capacitor 77. Wiring 66 is electrically connected to the other of the source and drain of transistor 73 and the other electrode of capacitor 77. One of the source and drain of transistor 74 is electrically connected to one of the source and drain of transistor 75. The other of the source and drain of transistor 74 is electrically connected to wiring 67. The other of the source and drain of transistor 75 is electrically connected to wiring S2.

[0101] Transistors 71 to 75 can use OS transistors including metal oxide in the semiconductor layer. The OS transistor has the characteristic of extremely low off-state current. By using the OS transistor for transistors 71 to 75, the period during which capacitors 76 and 77 can hold charges can be made extremely long.

[0102] Note that transistor 74 can also include a semiconductor layer different from transistors 71 to 73 and transistor 75. For example, transistor 74 can also be a Si transistor including Si in the semiconductor layer. When transistor 74 is a Si transistor, the responsiveness of the transistor can be improved. Furthermore, when transistor 75 is an OS transistor, since the off-state current is small, the leakage current of wiring S2 can be suppressed. In addition, when transistor 71 is an OS transistor, the leakage current of capacitor 76 can be reduced. In addition, when transistor 73 is an OS transistor, the period during which capacitor 77 can hold charges can be made extremely long.

[0103] As other examples, transistor 74 can also include a semiconductor layer different from transistors 71 to 73 and transistor 75. For example, transistor 74 can also be an OS transistor. When transistor 74 is an OS transistor, the channel length of the transistor can be reduced. In addition, by making transistors 71 to 73 and transistor 75 Si transistors, the channel length of the transistor can be reduced. That is, the resolution of the sensor area 41 can be improved.

[0104] [OS Transistor]

[0105] As a semiconductor material for an OS transistor, a metal oxide having a band gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more can be used. Typically, an indium-containing oxide semiconductor or the like can be used. For example, CAAC-OS or CAC-OS mentioned later can be used. In CAAC-OS, the atoms constituting the crystal are stable, and it is suitable for transistors that emphasize reliability. CAC-OS exhibits high mobility characteristics and is suitable for transistors for high-speed driving.

[0106] Since the band gap of the semiconductor layer of the OS transistor is large, it exhibits an extremely low off-state current characteristic. Different from Si transistors, OS transistors do not suffer from impact ionization, avalanche breakdown, short-channel effect, etc., and thus a circuit with high breakdown voltage and high reliability can be formed. In addition, electrical characteristic deviations due to non-uniformity caused by crystallinity, which occur in Si transistors, are not easily generated in OS transistors.

[0107] As the semiconductor layer in the OS transistor, for example, a film represented by "In-M-Zn type oxide" containing indium, zinc, and M (metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium) can be used.

[0108] When the oxide semiconductor constituting the semiconductor layer is an In-M-Zn type oxide, it is preferable that the atomic number ratio of the metal elements of the sputtering target used to form the In-M-Zn oxide film satisfies In≥M and Zn≥M. The atomic number ratio of the metal elements of such a sputtering target is preferably In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5:1:8, etc. Note that the atomic number ratio of the semiconductor layer formed may vary within the range of ±40% of the atomic number ratio of the metal elements in the above sputtering target.

[0109] As the semiconductor layer, an oxide semiconductor with a low carrier density can be used. For example, as the semiconductor layer, a carrier density of 1×10 17 / cm 3 or less, preferably 1×10 15 / cm 3 or less, more preferably 1×10 13 / cm 3 or less, further preferably 1×10 11 / cm 3 or less, even more preferably less than 1×10 10 / cm 3 is used, and 1×10 -9 / cm 3The above oxide semiconductor. Such an oxide semiconductor is referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. The defect energy level density of this oxide semiconductor is low, so it can be said to be an oxide semiconductor with stable characteristics.

[0110] Note that the present invention is not limited to the above description, and materials with appropriate compositions can be used according to the semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the required transistors. In addition, it is preferable to appropriately set the carrier density, impurity concentration, defect density, atomic number ratio of metal elements to oxygen, interatomic distance, density, etc. of the semiconductor layer to obtain the semiconductor characteristics of the required transistors.

[0111] When the oxide semiconductor constituting the semiconductor layer contains silicon or carbon, which is one of the Group 14 elements, oxygen defects increase, and the semiconductor layer becomes n-type. Therefore, the concentration of silicon or carbon in the semiconductor layer (the concentration measured by secondary ion mass spectrometry) is set to 2×10 18 atoms / cm 3 or less, preferably 2×10 17 atoms / cm 3 or less.

[0112] In addition, sometimes when alkali metals and alkaline earth metals bond with the oxide semiconductor, carriers are generated, increasing the off-state current of the transistor. Therefore, the concentration of alkali metals or alkaline earth metals in the semiconductor layer (the concentration measured by secondary ion mass spectrometry) is set to 1×10 18 atoms / cm 3 or less, preferably 2×10 16 atoms / cm 3 or less.

[0113] In addition, when the oxide semiconductor constituting the semiconductor layer contains nitrogen, electrons are generated as carriers, the carrier density increases, and it is prone to n-type conversion. As a result, transistors using an oxide semiconductor containing nitrogen are prone to become normally-on characteristics. Therefore, the nitrogen concentration in the semiconductor layer (the concentration measured by secondary ion mass spectrometry) is preferably 5×10 18 atoms / cm 3 or less.

[0114] In addition, the semiconductor layer may also have a non-single crystal structure, for example. The non-single crystal structure includes, for example, CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor) having a c-axis oriented crystal, a polycrystalline structure, a microcrystalline structure, or an amorphous structure. Among the non-single crystal structures, the amorphous structure has the highest defect state density, and CAAC-OS has the lowest defect state density.

[0115] An oxide semiconductor film having an amorphous structure, for example, has a disordered atomic arrangement and does not have a crystalline component. Alternatively, an oxide film having an amorphous structure is, for example, a completely amorphous structure and does not have a crystalline portion.

[0116] In addition, the semiconductor layer may also be a mixed film of two or more of a region having an amorphous structure, a region having a microcrystalline structure, a region having a polycrystalline structure, a region of CAAC-OS, and a region having a single crystal structure. The mixed film sometimes has, for example, a single-layer structure or a stacked structure including two or more of the above regions.

[0117] Hereinafter, the structure of CAC (Cloud-Aligned Composite)-OS of one mode of the non-single crystal semiconductor layer will be described.

[0118] CAC-OS refers to a structure in which elements contained in an oxide semiconductor are unevenly distributed, and the size of a material containing the unevenly distributed elements is 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less or an approximate size. Note that hereinafter, a state in which one or more metal elements are unevenly distributed in an oxide semiconductor and regions containing the metal elements are mixed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less or an approximate size is also referred to as a mosaic or patch state.

[0119] The oxide semiconductor preferably contains at least indium. Particularly preferably, it contains indium and zinc. In addition to this, it may also contain one or more selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the like.

[0120] For example, CAC-OS in In-Ga-Zn oxide (in CAC-OS, particularly, In-Ga-Zn oxide may be referred to as CAC-IGZO) means that the material is divided into indium oxide (hereinafter, referred to as InO X1 (X1 is a real number greater than 0)) or indium zinc oxide (hereinafter, referred to as In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0)) and gallium oxide (hereinafter, referred to as GaO X3 (X3 is a real number greater than 0)) or gallium zinc oxide (hereinafter, referred to as Ga X4 Zn Y4 O Z4 (X4, Y4, and Z4 are real numbers greater than 0)) and the like to become a mosaic state, and the mosaic InO X1 or In X2 Zn Y2 OZ2 A composition that is uniformly distributed in the film (hereinafter, also referred to as cloud-like).

[0121] In other words, CAC-OS is a composite oxide semiconductor having a structure in which regions mainly composed of GaO X3 and regions mainly composed of In X2 Zn Y2 O Z2 or InO X1 are mixed together. In this specification, for example, when the atomic ratio of In to element M in the first region is greater than the atomic ratio of In to element M in the second region, the In concentration in the first region is higher than that in the second region.

[0122] Note that IGZO is a general term and sometimes refers to a compound containing In, Ga, Zn, and O. As a typical example, InGaO 3 (ZnO) m1 (where m1 is a natural number) or In (1+x0) Ga (1-x0) O 3 (ZnO) m0 (-1 ≤ x0 ≤ 1, and m0 is an arbitrary number) can be cited as a crystalline compound.

[0123] The above crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a crystalline structure in which multiple nanocrystals of IGZO have c-axis orientation and are connected in a non-oriented manner on the a-b plane.

[0124] On the other hand, CAC-OS is related to the material composition of the oxide semiconductor. CAC-OS refers to the following composition: in a material composition containing In, Ga, Zn, and O, nano-particle-like regions mainly composed of Ga are observed in part, and nano-particle-like regions mainly composed of In are observed in part, and these regions are randomly dispersed in a mosaic pattern. Therefore, in CAC-OS, the crystal structure is a secondary factor.

[0125] CAC-OS does not include a stacked structure of two or more films having different compositions. For example, it does not include a structure composed of two layers of a film mainly composed of In and a film mainly composed of Ga.

[0126] Note that sometimes no clear boundary can be observed between the regions mainly composed of GaO X3 and the regions mainly composed of In X2 Zn Y2 O Z2 or InO X1 .

[0127] When one or more selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. are included in CAC-OS to replace gallium, CAC-OS refers to the following composition: a nano-particle-like region mainly composed of the metal element is observed in a part, and a nano-particle-like region mainly composed of In is observed in a part, and they are irregularly dispersed in a mosaic pattern.

[0128] CAC-OS can be formed, for example, by sputtering under the condition of not intentionally heating the substrate. When forming CAC-OS by sputtering, as the film-forming gas, one or more selected from inert gases (typically argon), oxygen gas, and nitrogen gas can be used. In addition, the lower the flow ratio of oxygen gas in the total flow rate of the film-forming gas during film formation, the better. For example, the flow ratio of oxygen gas is set to be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0129] CAC-OS has the following characteristics: when measured by θ / 2θ scanning using the Out-of-plane method, one of the X-ray diffraction (XRD: X-ray diffraction) measurement methods, no distinct peak is observed. That is, according to X-ray diffraction, it can be known that there is no orientation in the a-b plane direction and the c-axis direction in the measurement region.

[0130] In addition, in the electron diffraction pattern of CAC-OS obtained by irradiating an electron beam with a beam diameter of 1 nm (also called a nano-beam), a bright annular region (annular region) and multiple bright spots within the annular region are observed. Thus, according to the electron diffraction pattern, it can be known that the crystal structure of CAC-OS has an nc (nano-crystal) structure without orientation in the plane direction and the cross-sectional direction.

[0131] In addition, for example, in the CAC-OS of In-Ga-Zn oxide, according to the EDX surface analysis (mapping) image obtained by energy dispersive X-ray spectroscopy (EDX), it can be confirmed that there are regions mainly composed of GaO X3 and regions mainly composed of In X2 Zn Y2 O Z2 or InO X1 and they are unevenly distributed and mixed.

[0132] The structure of CAC-OS is different from that of the IGZO compound in which metal elements are uniformly distributed, and it has properties different from those of the IGZO compound. In other words, CAC-OS has GaO X3Regions mainly composed of etc. and In X2 Zn Y2 O Z2 or InO X1 Regions mainly composed of are separated from each other, and the regions mainly composed of each element have a mosaic structure.

[0133] Here, the conductivity of the region mainly composed of In X2 Zn Y2 O Z2 or InO X1 is higher than that of the region mainly composed of GaO X3 etc. In other words, when carriers flow through the region mainly composed of In X2 Zn Y2 O Z2 or InO X1 it exhibits the conductivity of an oxide semiconductor. Therefore, when the region mainly composed of In X2 Zn Y2 O Z2 or InO X1 is distributed in the oxide semiconductor in a cloud-like manner, a high field-effect mobility (μ) can be achieved.

[0134] On the other hand, the insulation of the region mainly composed of GaO X3 etc. is higher than that of the region mainly composed of In X2 Zn Y2 O Z2 or InO X1 In other words, when the region mainly composed of GaO X3 etc. is distributed in the oxide semiconductor, leakage current can be suppressed to achieve good switching operation.

[0135] Therefore, when CAC-OS is used for semiconductor elements, through the complementary action due to the insulation of GaO X3 etc. and the conductivity of In X2 Zn Y2 O Z2 or InO X1 a high on-state current (I on ) and a high field-effect mobility (μ) can be achieved.

[0136] In addition, semiconductor elements using CAC-OS have high reliability. Therefore, CAC-OS is suitable as a constituent material for various semiconductor devices.

[0137] Figure 4C1This is a circuit diagram showing circuit 46. Circuit 46 includes transistor 81, terminal 83, and terminal 84. The gate of transistor 81 is electrically connected to wiring BR. One of the source and drain of transistor 81 is electrically connected to terminal 83 and terminal 84. The other of the source and drain of transistor 81 is electrically connected to wiring 68.

[0138] Figure 4C2 This is a circuit diagram showing circuit 46a. Circuit 46a is different from Figure 4C1 in that it includes transistor 82. Wiring BR is electrically connected to the gate of transistor 81 and the gate of transistor 82. Wiring 68 is electrically connected to the other of the source and drain of transistor 81 and the other of the source and drain of transistor 82. One of the source and drain of transistor 81 is electrically connected to terminal 83 and terminal 84.

[0139] Figure 5 This is a diagram for Figure 2 detailed description of the sensor device 20a described in. For ease of explanation, Figure 5 the light-emitting region 31a, the sensor region 41a, and the sensor region 41b are described.

[0140] The sensor region 41a and the sensor region 41b are electrically connected to circuit 42. The light-emitting region 31a is electrically connected to circuit 32. Circuit 42 is electrically connected to the pixel 45 included in the sensor region 41a and the sensor region 41b via wiring SEa and wiring SEb. Circuit 32 is electrically connected to the pixel 35 included in the light-emitting region 31a via wiring G1a and wiring G2a.

[0141] A region CL1 is formed between the sensor region 41a and the light-emitting region 31a, and no wiring or circuit is provided in the region CL1. By not arranging wiring or circuit in the region CL1, the distance between the sensor region 41a and the light-emitting region 31a can be ensured. Thus, when the diffused light emitted from the light-emitting region 31a becomes stray light, the stray light can be suppressed from entering the sensor region 41a by ensuring the region CL1. In addition, when the sensor device 20a is flexible, by having a region where no wiring or circuit is arranged, the structure not arranged in the region CL1 has a smaller radius of curvature, so the flexibility is improved.

[0142] Note that the pixel 45 including the sensor element can be either a pixel of the same size as the pixel 35 including the light-emitting element 56 or a pixel of a different size. For example, when the pixel 45 is the same size as the pixel 35, the light-emitting region 31 and the sensor region 41 can use synchronized signals. This can simplify the circuit structure. In addition, the light-emitting region 31 and the sensor region 41 can be independently driven respectively. Therefore, it is easy to make the sensor region 41 larger than the light-emitting region 31.

[0143] Next, an example where the sizes of pixel 45 and pixel 35 are different will be described. When the light-emitting region 31 is simultaneously lit like the light of a flash, the time for supplying light-emitting data to the pixel can be reduced by increasing the light-emitting element 56. The sensor region 41 can switch between the global shutter method and the rolling shutter method to detect the reflected light from the object. For example, the differential data between the third detection data and the fourth detection data detected by the global shutter method can be detected. This differential data is applicable to detecting the change amount between the third detection data and the fourth detection data. The third data is the data for detecting the reflected light that has changed due to the object receiving light, and the fourth data is the data for detecting the reflected light that changes over time for the object.

[0144] Note that the rolling shutter method is a working method in which a plurality of pixels 45 included in the sensor region are sequentially exposed and data is read out, and the readout period of one row overlaps with the exposure period of other rows. Exposure means converting the light received by the sensor element into voltage through the photoelectric conversion function. Since the reading operation is performed immediately after the exposure, even a circuit structure with a short holding period of the detection data can perform shooting. However, since the image of one frame is composed of detection data without simultaneity of imaging, distortion occurs in the image when shooting a moving object.

[0145] On the other hand, the global shutter method is a working method in which exposure is simultaneously performed in all pixels, detection data is obtained in each pixel, and data is read out for each row. Thus, an undistorted image can be obtained even when shooting a moving object.

[0146] For example, as the transistors 73 and 75 included in the pixel 45, by using transistors with metal oxides in the semiconductor layer, the holding period of the charge held by the capacitor 77 can be very long. Therefore, the global shutter method in which charge storage operations are simultaneously performed in all pixels can be adopted without using a complex circuit structure or working method.

[0147] Figure 6 is a diagram for Figure 5 detailed description of a different sensor device 20a. The light-emitting region 31a, the sensor region 41a, and the sensor region 41b will be described.

[0148] The sensor region 41a, the light-emitting region 31a, and the sensor region 41b are electrically connected to the circuit 42a, the circuit 32e, and the circuit 42b, respectively. The circuit 42a is electrically connected to the pixel 45 included in the sensor region 41a via the wiring SEa. The circuit 32e is electrically connected to the pixel 35 included in the light-emitting region 31a via the wiring G1a and the wiring G2a. The circuit 42b is electrically connected to the pixel 45 included in the sensor region 41b via the wiring SEb.

[0149] A region CL2 is formed between the sensor region 41a and the light-emitting region 31a, and a circuit 32e is provided in the region CL2. When the diffused light emitted from the light-emitting region 31a becomes stray light, the circuit 32e disposed in the region CL2 can suppress the incidence on the sensor region 41a by shielding the stray light.

[0150] Figure 7 It is a diagram for Figure 6 detailed description of a different sensor device 20a. The light-emitting region 31a, the sensor region 41a, and the sensor region 41b are described.

[0151] The sensor region 41a and the sensor region 41b are electrically connected to the circuit 42. The light-emitting region 31a is electrically connected to the circuit 32. The circuit 42 is electrically connected to the pixels 45 included in the sensor region 41a and the sensor region 41b via the wiring SEa. The circuit 32 is electrically connected to the pixels 35 included in the light-emitting region 31a via the wiring G1a and the wiring G2a.

[0152] A region CL3 is formed between the sensor region 41a and the light-emitting region 31a, and wiring is provided in the region CL3. The distance between the sensor region 41a and the light-emitting region 31a is ensured by the region CL3. Therefore, when the diffused light emitted from the light-emitting region 31a becomes stray light, the region CL3 can suppress the incidence of the stray light on the sensor region 41a. In addition, when the sensor device 20a is flexible, by having a region where no circuit or the like is arranged, the number of structures disposed in the region CL3 becomes smaller, so the radius of curvature becomes smaller and the flexibility is improved.

[0153] [Organic light-emitting element]

[0154] The light-emitting element 56 can use an organic light-emitting element. As the organic light-emitting element, an element that emits infrared light can be used. Particularly preferably, an organic light-emitting element that emits infrared light having a peak at a wavelength of 700 nm or more and 9000 nm or less is used.

[0155] In addition, by using an organic light-emitting element for the light-emitting element 56, a thin imaging device with an attached light source can be realized, which is easy to install on various devices and the portability can also be improved.

[0156] As the organic light-emitting element, a light-emitting element using electroluminescence (EL element) can be used. The EL element has a layer containing a light-emitting compound (EL layer) between a pair of electrodes. When a potential difference higher than the threshold voltage of the EL element is generated between the pair of electrodes, holes are injected into the EL layer from the anode side, and electrons are injected into the EL layer from the cathode side. The injected electrons and holes recombine in the EL layer, and thus the light-emitting substance contained in the EL layer emits light.

[0157] EL elements are classified according to whether the light-emitting material is an organic compound or an inorganic compound. Usually, the former is called an organic EL element, and the latter is called an inorganic EL element.

[0158] In an organic EL element, by applying a voltage, electrons are injected into the EL layer from one electrode, and holes are injected into the EL layer from the other electrode. Through the recombination of these carriers (electrons and holes), the light-emitting organic compound forms an excited state and emits light when returning from this excited state to the ground state. Due to this mechanism, such a light-emitting element is called a current-excited light-emitting element.

[0159] The EL layer can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer printing, printing, inkjet, coating, etc.

[0160] Inorganic EL elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements according to their element structures. The dispersed inorganic EL element includes a light-emitting layer in which particles of a light-emitting material are dispersed in a binder, and its light-emitting mechanism is donor-acceptor recombination-type luminescence using donor energy levels and acceptor energy levels. The thin-film inorganic EL element has a structure in which the light-emitting layer is sandwiched between dielectric layers, and the dielectric layers sandwiching the light-emitting layer are sandwiched between electrodes, and its light-emitting mechanism is local-type luminescence using inner-shell electron transitions of metal ions.

[0161] Describe the structure of the light-emitting element. For example, the EL layer can be composed of multiple layers such as a first layer, a light-emitting layer, and a second layer. The first layer can include, for example, a layer containing a substance with high electron injection properties (electron injection layer) and a layer containing a substance with high electron transport properties (electron transport layer), etc. The light-emitting layer can contain, for example, a light-emitting compound. The second layer can include, for example, a layer containing a substance with high hole injection properties (hole injection layer) and a layer containing a substance with high hole transport properties (hole transport layer).

[0162] The EL layer provided between the first electrode and the second electrode can be used as a single light-emitting unit. Note that multiple light-emitting layers can also be provided between the first layer and the second layer. The emission direction of light is determined by using a light-transmissive conductive film for either the first electrode or the second electrode.

[0163] The light-emitting element can emit light of various wavelengths according to the material constituting the EL layer. In one aspect of the present invention, a material that emits infrared light (light having a peak wavelength in the wavelength range of 700 nm to 9000 nm) is used as the material constituting the EL layer. For example, materials that emit peak wavelengths within the target wavelength range such as 720 nm, 760 nm, 850 nm, 900 nm, etc. can be used according to the application.

[0164] In addition, in one embodiment of the present invention, as the light-emitting material (also referred to as the guest material or dopant material) of the EL layer, an organometallic iridium complex that emits infrared light is preferably used. As the organometallic iridium complex, a dimethylphenyl skeleton and a quinoxaline skeleton are preferably provided. In addition, as the above organometallic iridium complex, bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-2-quinoxalinyl-κN]phenyl-κC}(2,2',6,6'-tetramethyl-3,5-heptanedionato-κ 2 O,O')iridium(III) (abbreviation: Ir(dmdpq) 2 (dpm)), etc. can typically be used. By using the above organometallic iridium complex, an imaging element with high quantum efficiency or luminous efficiency can be provided.

[0165] In addition, as the substance (i.e., the host material) for dispersing the above organometallic iridium complex, for example, in addition to compounds having an arylamine skeleton such as 2,3-bis(4-diphenylaminophenyl)quinoxaline (abbreviation: TPAQn), NPB, it is preferable to use: carbazole derivatives such as CBP, 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), etc.; or metal complexes such as bis[2-(2-hydroxyphenyl)pyridinato]zinc (abbreviation: Znpp 2 ) and bis[2-(2-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(BOX) 2 ), bis(2-methyl-8-hydroxyquinolinato)(4-phenylphenolato)aluminum (abbreviation: BAlq), tris(8-hydroxyquinolinato)aluminum (abbreviation: Alq 3 ), etc. In addition, a polymer compound such as PVK can also be used.

[0166] In addition, as the substance (host material) for dispersing the above organometallic iridium complex, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) is preferably used.

[0167] In addition, by forming a light-emitting layer by including the above organometallic iridium complex (guest material) and the above host material, highly efficient infrared phosphorescent light emission can be obtained from the EL layer.

[0168] At least a part of this embodiment can be implemented in appropriate combination with other embodiments described in this specification.

[0169] (Embodiment 2)

[0170] In this embodiment, with reference to FIGS. 8 to Figure 15 a sensor device according to one embodiment of the present invention will be described.

[0171] The sensor device shown below is a device with a light-emitting function and a photographing function. The sensor device shown below can be applied to the light-emitting area or the sensor area in Embodiment 1.

[0172] [Summary]

[0173] The sensor device of this embodiment includes a sensor element and a light-emitting element on a flexible substrate. Specifically, in the light-emitting area, the light-emitting elements are arranged in a matrix, and this light-emitting area is used as a light source. In addition, in the sensor area, the sensor elements are arranged in a matrix, and this sensor area is used as a light-receiving part. The light-receiving part can be used for a detection sensor, an image sensor, or a touch sensor. That is, by detecting light with the light-receiving part, it is possible to detect the reflected light from an object that receives the light from the light-emitting element or the approach or contact of an object (such as a finger or a pen).

[0174] In the sensor device of this embodiment, when the light emitted by the light-emitting elements included in the light-emitting area is reflected by an object, the sensor elements in the sensor area can detect this reflected light, and thus it can be pasted on the object for use or easily embedded in a wearable electronic device (such as a watch, etc.).

[0175] As the light-emitting element, an organic light-emitting element may also be used. For example, as the organic light-emitting element, an EL element such as an organic light-emitting diode (OLED: Organic Light Emitting Diode) or a quantum dot light-emitting diode (QLED: Quantum-dot Light Emitting Diode) can be used. As the light-emitting substance included in the EL element, substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), inorganic compounds (quantum dot materials, etc.), substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials), etc. can be cited. In addition, as the light-emitting element, an LED such as a micro light-emitting diode (MicroLED) can also be bonded to a pixel for use. The light-emitting elements described below include organic light-emitting elements (EL elements) and micro light-emitting diodes, etc.

[0176] The sensor device of this embodiment has a function of detecting light using the sensor element.

[0177] The sensor element preferably can detect light having a peak wavelength of 700 nm or more. By detecting the light of 700 nm or more that returns as the reflected light from an object, it is possible to detect the type, composition, and image of the object.

[0178] For example, a sensor device can be used to detect hemoglobin, glucose, etc. in blood. Additionally, it is also possible to detect the sugar content of fruits, foreign objects such as needles mixed in clothes, etc. That is to say, the sensor device of the present embodiment can provide a biometric monitor or a sensor for biometric identification. For example, by disposing the sensor device inside an electronic device such as a clock, compared with the case of separately disposing the sensor device and the biometric monitor, the number of components of the electronic device can be reduced, and thus miniaturization and weight reduction of the electronic device can be achieved.

[0179] In addition, when the sensor element is used for a touch sensor, the sensor device of the present embodiment using the sensor element can be used as a sensor for biometric identification such as vein identification.

[0180] As the sensor element, for example, a pn-type or pin-type photodiode can be used. The sensor element is used as a photoelectric conversion element that detects the light incident on the sensor element to generate charges. The amount of charge generated depends on the amount of incident light.

[0181] In particular, as the sensor element, an organic photodiode having a layer containing an organic compound is preferably used. The organic photodiode is easily thinned, light-weighted, and made large-area, and has a high degree of freedom in shape and design, and thus can be applied to various sensor devices.

[0182] In one aspect of the present invention, an organic EL element is used as the light-emitting element, and an organic photodiode is used as the sensor element. There are many layers in the organic photodiode that can be formed with the same structure as the organic EL element. Therefore, the sensor element can be disposed in the sensor device without significantly increasing the manufacturing process. For example, the active layer of the sensor element and the light-emitting layer of the light-emitting element can be formed separately, while other layers are shared by the sensor element and the light-emitting element.

[0183] Figures 8A to 8B A sensor device showing one aspect of the present invention.

[0184] Figure 8AThe sensor device 100A shown includes a light-emitting region (31a, 31b), a sensor region (41a, 41b, 41c), and an FPC 172. The sensor device 100A is electrically connected to the semiconductor device through the FPC 172. Note that an IC (integrated circuit) including an image processing circuit may also be provided on the FPC 172 in a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like. For example, the IC 173 preferably includes a timing control circuit, a signal line driving circuit, a source follower circuit, an analog-to-digital conversion circuit, and the like. Note that as the IC 173, an IC packaged using an anisotropic conductive film (ACF: Anisotropic Conductive Film) or an anisotropic conductive paste (ACP: Anisotropic Conductive Paste) may be used, or a bare chip may be mounted using a flip chip mounting method.

[0185] Figure 8B The shown sensor device is different from the FPC 172 and can be connected to the semiconductor device through an electrode 244 provided on a substrate. Note that as an example, Figure 8B The structure of the sensor device 100A without an IC provided is shown.

[0186] In Figure 8A or Figure 8B between the first substrate and the second substrate, a layer having sensor element transistors, a layer having sensor elements, and a layer having light-emitting elements are included.

[0187] The more detailed structure of the sensor device according to one embodiment of the present invention will be described below with reference to FIGS. 9 to 11.

[0188] [Sensor device 300A]

[0189] Figure 9A A cross-sectional view of the sensor device 300A is shown.

[0190] The sensor device 300A includes a sensor element 110 and a light-emitting element 190.

[0191] The sensor element 110 includes a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a common electrode 115.

[0192] The light-emitting element 190 includes a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115.

[0193] The pixel electrode 111, the pixel electrode 191, the common layer 112, the active layer 113, the light-emitting layer 193, the common layer 114, and the common electrode 115 can each have either a single-layer structure or a stacked structure.

[0194] The partition wall 219 is located on the insulating layer 214. The partition wall 219 is an insulating layer.

[0195] The pixel electrode 111 and the pixel electrode 191 are located on the insulating layer 214. However, the pixel electrode 191 is located on the insulating layer 214 and the partition wall 219. The pixel electrode 111 and the pixel electrode 191 can be formed using the same material and the same process.

[0196] The common layer 112 is located on the pixel electrode 111 and the pixel electrode 191. The common layer 112 is a layer shared by the sensor element 110 and the light-emitting element 190.

[0197] The active layer 113 overlaps with the pixel electrode 111 with the common layer 112 therebetween. The light-emitting layer 193 overlaps with the pixel electrode 191 with the common layer 112 therebetween. The active layer 113 contains a first organic compound, and the light-emitting layer 193 contains a second organic compound different from the first organic compound.

[0198] The common layer 114 is located on the common layer 112, the active layer 113, and the light-emitting layer 193. The common layer 114 is a layer shared by the sensor element 110 and the light-emitting element 190.

[0199] The common electrode 115 has a portion that overlaps with the pixel electrode 111 with the common layer 112, the active layer 113, and the common layer 114 therebetween. In addition, the common electrode 115 has a portion that overlaps with the pixel electrode 191 with the common layer 112, the light-emitting layer 193, and the common layer 114 therebetween. The common electrode 115 is a layer shared by the sensor element 110 and the light-emitting element 190.

[0200] In the sensor device of the present embodiment, the active layer 113 of the sensor element 110 uses an organic compound. The layers other than the active layer 113 of the sensor element 110 can adopt the same structure as that of the light-emitting element 190 (EL element). Thus, as long as a process for forming the active layer 113 is added to the manufacturing process of the light-emitting element 190, the sensor element 110 can be formed while forming the light-emitting element 190. In addition, the light-emitting element 190 and the sensor element 110 can be formed on the same substrate. Therefore, the sensor element 110 can be provided in the sensor device without significantly increasing the manufacturing process.

[0201] In the sensor device 300A, only the active layer 113 of the sensor element 110 and the light-emitting layer 193 of the light-emitting element 190 are formed separately, and the other layers can be shared by the sensor element 110 and the light-emitting element 190. However, the structures of the sensor element 110 and the light-emitting element 190 are not limited thereto. In addition to the active layer 113 and the light-emitting layer 193, the sensor element 110 and the light-emitting element 190 may also have other separately formed layers (refer to the sensor devices 300K, 300L, and 300M described later). The sensor element 110 and the light-emitting element 190 preferably share one or more layers (common layers). Thus, the sensor element 110 can be provided in the sensor device without significantly increasing the manufacturing process.

[0202] The sensor device 300A includes a sensor element 110, a light-emitting element 190, a transistor 47, a transistor 48, etc. between a pair of substrates (substrate 151 and substrate 152).

[0203] In the sensor element 110, the common layer 112, the active layer 113, and the common layer 114 located between the pixel electrode 111 and the common electrode 115 can each be referred to as an organic layer (a layer containing an organic compound). The pixel electrode 111 preferably has a function of reflecting light. The partition wall 216 is located on the partition wall 219. The end portion of the pixel electrode 111 is covered by the partition wall 216. The pixel electrode 191 included in the light-emitting element 190 includes a region 191a in contact with the partition wall 219 and the partition wall 216 shown by a dotted line. The common electrode 115 preferably has a function of transmitting light.

[0204] The sensor element 110 has a function of detecting light. Specifically, the sensor element 110 is a photoelectric conversion element that receives the light 22 incident from the outside of the sensor device 300A and converts it into an electrical signal. The light 22 can also be said to be the light reflected by the object of the light of the light-emitting element 190. In addition, the light 22 can also be incident on the sensor element 110 through a lens described later.

[0205] A light-shielding layer BM is provided on the surface of the substrate 152 on the side of the substrate 151. The light-shielding layer BM is formed with openings at positions overlapping the sensor element 110 and at positions overlapping the light-emitting element 190. By providing the light-shielding layer BM, the range of light detected by the sensor element 110 can be controlled.

[0206] As the light-shielding layer BM, a material that blocks the light from the light-emitting element can be used. The light-shielding layer BM preferably absorbs light. As the light-shielding layer BM, for example, a black matrix can be formed using a metal material or a resin material containing a pigment (such as carbon black) or a dye. The light-shielding layer BM can also adopt a laminated structure of a red filter, a green filter, or a blue filter.

[0207] Here, the sensor element 110 detects the light from the light-emitting element 190 reflected by the object. However, sometimes the light from the light-emitting element 190 is reflected within the sensor device 300A and enters the sensor element 110 without passing through the object. The light-shielding layer BM can reduce the negative impact of such diffused light. For example, in the case where the light-shielding layer BM is not provided, sometimes the light 23a emitted by the light-emitting element 190 is reflected by the substrate 152, and thus the reflected light 23b enters the sensor element 110. By providing the light-shielding layer BM, the incidence of the reflected light 23b on the sensor element 110 can be suppressed. Furthermore, by including the region 191a, the light 23c emitted by the light-emitting element 190 is reflected by the pixel electrode 191 and the reflected light 23d is emitted in substantially the same direction as the light emission 21. Therefore, the light that would otherwise become noise as diffused light can be effectively utilized. That is, by including the region 191a, the pixel electrode 191 can have a light-shielding function and a light-collecting function. Thereby, noise can be reduced and the sensitivity of the sensor using the sensor element 110 can be improved.

[0208] In the light-emitting element 190, the common layer 112, the light-emitting layer 193, and the common layer 114 respectively located between the pixel electrode 191 and the common electrode 115 can be referred to as the EL layer. The pixel electrode 191 preferably has a function of reflecting light. The end portion of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 111 and the pixel electrode 191 are electrically insulated from each other by the partition wall 216. The common electrode 115 has a function of transmitting light.

[0209] The light-emitting element 190 has a function of emitting light. Specifically, the light-emitting element 190 is an electroluminescent element that emits light toward the substrate 152 side when a voltage is applied between the pixel electrode 191 and the common electrode 115 (refer to the light emission 21).

[0210] The light-emitting layer 193 is preferably formed so as not to overlap with the light-receiving region (sensor region) of the sensor element 110. Thereby, absorption of the light 22 by the light-emitting layer 193 can be suppressed and the amount of light irradiated onto the sensor element 110 can be increased.

[0211] The pixel electrode 111 is electrically connected to the source or drain of the transistor 47 through an opening provided in the insulating layer 214. The end portion of the pixel electrode 111 is covered by the partition wall 216.

[0212] The pixel electrode 191 is electrically connected to the source or drain of the transistor 48 through an opening provided in the insulating layer 214. The end portion of the pixel electrode 191 is covered by the partition wall 216. The transistor 48 has a function of controlling the driving of the light-emitting element 190.

[0213] The transistors 47 and 48 are formed in contact with each other on the same layer ( Figure 9Aon the substrate 151).

[0214] At least a part of the circuit electrically connected to the sensor element 110 is preferably formed using the same materials and processes as the circuit electrically connected to the light-emitting element 190. Thus, compared with the case where two circuits are formed separately, the thickness of the sensor device can be reduced, and the manufacturing process can be simplified.

[0215] The sensor element 110 and the light-emitting element 190 are each preferably covered with a protective layer 195. In Figure 9A it, the protective layer 195 is provided on and in contact with the common electrode 115. By providing the protective layer 195, the entry of impurities such as water into the sensor element 110 and the light-emitting element 190 can be suppressed, and thus the reliability of the sensor element 110 and the light-emitting element 190 can be improved. In addition, an adhesive layer 142 can be used to bond the protective layer 195 and the substrate 152.

[0216] In addition, as Figure 10A shown, there may be no protective layer on the sensor element 110 and the light-emitting element 190. In Figure 10A it, the common electrode 115 and the substrate 152 are bonded using the adhesive layer 142.

[0217] [Sensor device 300B]

[0218] Figure 9B A cross-sectional view of the sensor device 300B is shown. In addition, in the description of the sensor device to be described later, the description of the same structure as the previously described sensor device may sometimes be omitted.

[0219] Figure 9B The sensor device 300B shown includes a lens 149 in addition to the structure of the sensor device 300A.

[0220] The sensor device of the present embodiment may also include a lens 149. The lens 149 is provided at a position overlapping the sensor element 110. In the sensor device 300B, the lens 149 is provided in contact with the substrate 152. The lens 149 included in the sensor device 300B has a convex surface on the side of the substrate 151. Alternatively, the lens 149 may have a convex surface on the side of the substrate 152.

[0221] When both the light-shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, there is no limitation on the formation order thereof. Although an example in which the lens 149 is formed first is shown in Figure 9B , the light-shielding layer BM may also be formed first. In Figure 9B , the end portion of the lens 149 is covered with the light-shielding layer BM.

[0222] The sensor device 300B has a structure in which light 22 is incident on the sensor element 110 through the lens 149. Compared with the case where the lens 149 is not provided, by providing the lens 149, the imaging range of the sensor element 110 can be reduced, thereby suppressing the overlap of the imaging ranges of adjacent sensor elements 110. Thus, a clear image with less blurring can be captured. In addition, when the imaging ranges of the sensor elements 110 are equal, compared with the case where the lens 149 is not provided, by providing the lens 149, the size of the pinhole (equivalent to the opening size of the BM overlapping the sensor element 110 in Figure 9B can be increased. Thus, by having the lens 149, the amount of light incident on the sensor element 110 can be increased.

[0223] Similar to the Figure 9B shown sensor device 300B, Figure 10B and Figure 10C shown sensor devices also each have a structure in which light 22 is incident on the sensor element 110 through the lens 149.

[0224] In Figure 10B , the lens 149 is provided in contact with the top surface of the protective layer 195. Figure 10B The lens 149 included in the shown sensor device has a convex surface on the side of the substrate 152.

[0225] Figure 10C The shown sensor device is provided with a lens array 146 on the display surface side of the substrate 152. The lenses included in the lens array 146 are provided at positions overlapping the sensor elements 110. Preferably, a light-shielding layer BM is provided on the surface of the substrate 152 on the side of the substrate 151.

[0226] As a method for forming the lens of the sensor device for this embodiment, a lens such as a microlens can be directly formed on the substrate or the sensor element, or a lens array such as a separately fabricated microlens array can be bonded to the substrate.

[0227] [Sensor device 300C]

[0228] Figure 9C A cross-sectional view of the sensor device 300C is shown.

[0229] Figure 9C The shown sensor device 300C is different from the sensor device 300A in that it includes a substrate 153, a substrate 154, an adhesive layer 155, an insulating layer 212, partition walls 219a and 217, and does not include the substrate 151, the substrate 152, and the partition wall 216. Note that the partition wall 219a can be formed of an organic layer or a conductive layer.

[0230] The substrate 153 and the insulating layer 212 are bonded together by the bonding layer 155. The substrate 154 and the protective layer 195 are bonded together by the bonding layer 142.

[0231] The sensor device 300C is formed by transposing the insulating layer 212, the transistor 47, the transistor 48, the sensor element 110, the light-emitting element 190, etc. formed on the manufacturing substrate onto the substrate 153. The substrate 153 and the substrate 154 preferably have flexibility. Thereby, the flexibility of the sensor device 300C can be improved. For example, the substrate 153 and the substrate 154 are preferably made of resin.

[0232] As the substrate 153 and the substrate 154, the following materials can be used: polyester resins such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, and cellulose nanofibers, etc. One or both of the substrate 153 and the substrate 154 can also use glass with a thickness having a flexible degree.

[0233] The substrate included in the sensor device of the present embodiment can use a thin film with high optical isotropy. As the thin film with high optical isotropy, there can be mentioned cellulose triacetate (TAC, also known as cellulose acetate triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, acrylic film, etc.

[0234] The partition wall 217 preferably absorbs the light emitted by the light-emitting element. As the partition wall 217, for example, a resin material containing a pigment or a dye can be used to form a black matrix. In addition, by using a brown resist material, the partition wall 217 can be formed by the colored insulating layer.

[0235] The light 23e emitted by the light-emitting element 190 is reflected by the surface of a part of the partition wall 217 to become the reflected light 23g. Sometimes, a part of the reflected light 23g is reflected by the substrate 154, so that the reflected light 23h is incident on the sensor element 110. In addition, sometimes the light 23e passes through the partition wall 217 and is reflected by the transistor or wiring, etc., so that the reflected light is incident on the sensor element 110. In addition, by absorbing a part of the light 23f by the partition wall 217, the amount of the reflected light 23g can be reduced and the amount of light incident on the sensor element 110 can be suppressed. Thereby, noise can be reduced and the sensitivity of the sensor using the sensor element 110 can be improved.

[0236] Therefore, the partition wall 217 preferably absorbs at least the light having the wavelength of the light detected by the sensor element 110. For example, when the sensor element 110 detects the green light emitted by the light-emitting element 190, the partition wall 217 preferably absorbs at least the green light. For example, when the partition wall 217 has a red filter, the green light 23e can be absorbed, whereby the amount of the reflected light 23h incident on the sensor element 110 can be suppressed.

[0237] [Sensor devices 300K, 300L, and 300M]

[0238] Figure 11A A cross-sectional view showing the sensor device 300K, Figure 11B A cross-sectional view showing the sensor device 300L, and Figure 11C A cross-sectional view showing the sensor device 300M.

[0239] The sensor device 300K is different from the sensor device 300A in that it includes the buffer layers 184 and 194 and does not have the common layer 114. The buffer layers 184 and 194 can have either a single-layer structure or a stacked-layer structure.

[0240] In the sensor device 300K, the sensor element 110 includes a pixel electrode 111, a common layer 112, an active layer 113, a buffer layer 184, and a common electrode 115. In addition, in the sensor device 300K, the light-emitting element 190 includes a pixel electrode 191, a common layer 112, a light-emitting layer 193, a buffer layer 194, and a common electrode 115.

[0241] The sensor device 300L is different from the sensor device 300A in that it includes the buffer layers 182 and 192 and does not have the common layer 112. The buffer layers 182 and 192 can have either a single-layer structure or a stacked-layer structure.

[0242] In the sensor device 300L, the sensor element 110 includes a pixel electrode 111, a buffer layer 182, an active layer 113, a common layer 114, and a common electrode 115. In addition, in the sensor device 300L, the light-emitting element 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a common layer 114, and a common electrode 115.

[0243] The sensor device 300M is different from the sensor device 300K or 300L in that it includes the buffer layers 182, 184, 192, and 194 and does not have the common layers 112 and 114.

[0244] In the sensor device 300M, the sensor element 110 includes a pixel electrode 111, a buffer layer 182, an active layer 113, a buffer layer 184, and a common electrode 115. In addition, in the sensor device 300M, the light-emitting element 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a buffer layer 194, and a common electrode 115.

[0245] In the manufacture of the sensor element 110 and the light-emitting element 190, not only can the active layer 113 and the light-emitting layer 193 be formed separately, but also the other layers can be formed separately.

[0246] In the sensor device 300K, an example of separately forming the buffer layer 184 between the common electrode 115 and the active layer 113 and the buffer layer 194 between the common electrode 115 and the light-emitting layer 193 is shown. As the buffer layer 194, for example, one or both of an electron injection layer and an electron transport layer can be formed.

[0247] In the sensor device 300L, an example of separately forming the buffer layer 182 between the pixel electrode 111 and the active layer 113 and the buffer layer 192 between the pixel electrode 191 and the light-emitting layer 193 is shown. As the buffer layer 192, for example, one or both of a hole injection layer and a hole transport layer can be formed.

[0248] In the sensor device 300M, an example in which there is no common layer between the sensor element 110 and the light-emitting element 190 between a pair of electrodes (the pixel electrode 111 or the pixel electrode 191 and the common electrode 115) is shown. As the sensor element 110 and the light-emitting element 190 included in the sensor device 300M, the pixel electrode 111 and the pixel electrode 191 are formed of the same material and in the same process on the insulating layer 214. The buffer layer 182, the active layer 113, and the buffer layer 184 are formed on the pixel electrode 111, and the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 are formed on the pixel electrode 191. Then, the common electrode 115 is formed so as to cover the pixel electrode 111, the buffer layer 182, the active layer 113, the buffer layer 184, the pixel electrode 191, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194. There is no particular limitation on the formation order of the stacked structures of the buffer layer 182, the active layer 113, and the buffer layer 184 and the stacked structures of the buffer layer 192, the light-emitting layer 193, and the buffer layer 194. For example, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be formed after the buffer layer 182, the active layer 113, and the buffer layer 184 are formed. On the contrary, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be formed before the buffer layer 182, the active layer 113, and the buffer layer 184 are formed. In addition, they may be alternately formed in the order of the buffer layer 182, the buffer layer 192, the active layer 113, the light-emitting layer 193, and so on.

[0249] The following refers to FIGS. 12 to Figure 15 describe the more detailed structure of the sensor device according to one embodiment of the present invention.

[0250] [Sensor device 100A]

[0251] Figure 12A A cross-sectional view of the sensor device 100A is shown.

[0252] The sensor device 100A has a structure in which the bonding substrate 151 and the substrate 152 are bonded. In Figure 8A the substrate 151 is shown by a dashed line.

[0253] The sensor device 100A includes a light-emitting region 31a, a sensor region 41a, a circuit 42a, a wiring 165, and the like. Figure 12A An example in which the FPC 172 is mounted in the sensor device 100A is shown. Note that although Figure 12A not shown, the IC 173 shown in Figure 8A is also mounted. Therefore, the structure shown in Figure 12A can also be referred to as a sensor module including the sensor device 100A, the IC, and the FPC.

[0254] As the circuit 42a, for example, a scan line driving circuit can be used.

[0255] The wiring 165 has a function of supplying signals and power to the light-emitting region 31a, the sensor region 41a, and the circuit 42a. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from Figure 8A the IC 173 shown in

[0256] FIG. 12 shows Figure 8A an example of a cross-section of a part of the region including the FPC 172, a part of the region including the circuit 42a, a part of the region including the sensor region 41a, a part of the region including the light-emitting region 31a, a part of the region including the region CL1, and a part of the region including the end portion of the sensor device 100A shown in

[0257] Figure 12A The sensor device 100A shown in

[0258] includes a transistor 201, a transistor 205, a transistor 206, a light-emitting element 190, a sensor element 110, etc. between the substrate 151 and the substrate 152. Figure 12AIn this case, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is adopted. The adhesive layer 142 may also overlap with the light-emitting element 190. In addition, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may also be filled with a resin different from the adhesive layer 142.

[0259] The light-emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 are sequentially stacked from the side of the insulating layer 214. The partition wall 219 is located on the insulating layer 214, and the pixel electrode 191 includes a region 191a in contact with the insulating layer 214 and the partition wall 216. The pixel electrode 191 is connected to the conductive layer 222b included in the transistor 206 through an opening formed in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light-emitting element 190. The partition wall 216 covers the end portion (region 191a) of the pixel electrode 191. The pixel electrode 191 contains a material that reflects light, while the common electrode 115 contains a material that transmits light.

[0260] The sensor element 110 has a stacked structure in which a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a common electrode 115 are sequentially stacked from the side of the insulating layer 214. The pixel electrode 111 is electrically connected to the conductive layer 222b included in the transistor 205 through an opening formed in the insulating layer 214. The partition wall 216 covers the end portion of the pixel electrode 111. The pixel electrode 111 contains a material that reflects light, while the common electrode 115 contains a material that transmits light.

[0261] The light-emitting element 190 emits light to the side of the substrate 152. In addition, the sensor element 110 receives light through the substrate 152 and the space 143. The substrate 152 is preferably made of a material with high light transmittance.

[0262] The pixel electrode 111 and the pixel electrode 191 can be formed using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are used for both the sensor element 110 and the light-emitting element 190. Except for the active layer 113 and the light-emitting layer 193, the sensor element 110 and the light-emitting element 190 can share other layers. Thus, the sensor element 110 can be provided in the sensor device 100A without significantly increasing the manufacturing process.

[0263] The region 191a included in the pixel electrode 191 has the function of reflecting the light emitted by the light-emitting element 190 and shielding the diffused light incident on the sensor element. Moreover, it also has the function of reflecting the light emitted by the light-emitting element 190 and collecting light in the approximate direction in which the light-emitting element emits light. Furthermore, a light-shielding layer BM is provided on the surface of the substrate 152 on the side of the substrate 151. The light-shielding layer BM is formed with openings at positions overlapping the sensor element 110 and at positions overlapping the light-emitting element 190. By providing the light-shielding layer BM, the range of light detected by the sensor element 110 can be controlled. In addition, by providing the light-shielding layer BM, it is possible to suppress light from directly entering the sensor element 110 from the light-emitting element 190 without passing through the object. Thus, a sensor with less noise and high sensitivity can be achieved.

[0264] The transistor 201, the transistor 205, and the transistor 206 are all provided on the substrate 151. These transistors can be formed using the same material and the same process.

[0265] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are sequentially provided on the substrate 151. A part of the insulating layer 211 serves as the gate insulating layer of each transistor. A part of the insulating layer 213 serves as the gate insulating layer of each transistor. The insulating layer 215 is provided so as to cover the transistors. The insulating layer 214 is provided so as to cover the transistors and is used as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistors, and it can be either one or two or more.

[0266] Preferably, a material in which impurities such as water or hydrogen do not easily diffuse is used for at least one of the insulating layers covering the transistors. Thus, the insulating layer can be used as a barrier layer. By adopting such a structure, it is possible to effectively suppress the diffusion of impurities from the outside into the transistors, thereby improving the reliability of the sensor device.

[0267] Preferably, an inorganic insulating film is used for the insulating layer 211, the insulating layer 213, and the insulating layer 215. As the inorganic insulating film, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or an aluminum nitride film can be used. In addition, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can also be used. In addition, two or more of the above insulating films can also be laminated.

[0268] Here, the barrier property of the organic insulating film is lower than that of the inorganic insulating film in many cases. Therefore, the organic insulating film preferably includes an opening near the end of the sensor device 100A. Thereby, the intrusion of impurities through the organic insulating film from the end of the sensor device 100A can be suppressed. In addition, the organic insulating film can also be formed such that its end is located inside the end of the sensor device 100A to protect the organic insulating film from being exposed to the end of the sensor device 100A.

[0269] The insulating layer 214 used as the planarization layer preferably uses an organic insulating film. As materials that can be used for the organic insulating film, for example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, silicone resin, benzocyclobutene resin, phenolic resin, and precursors of these resins can be used.

[0270] In Figure 12A In the region 228 shown, an opening is formed in the insulating layer 214. Thereby, even when an organic insulating film is used as the insulating layer 214, the intrusion of impurities from the outside through the insulating layer 214 into the light-emitting region 31a and the sensor region 41a can be suppressed. Thereby, the reliability of the sensor device 100A can be improved.

[0271] The transistors 201, 205, and 206 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; conductive layers 222a and 222b serving as source and drain electrodes; a semiconductor layer 231; an insulating layer 213 serving as a gate insulating layer; and a conductive layer 223 serving as a gate. Here, multiple layers obtained by processing the same conductive film are attached with the same hatching. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0272] There is no particular limitation on the transistor structure included in the sensor device of the present embodiment. For example, a planar transistor, a staggered transistor, or an inverse staggered transistor can be adopted. In addition, each transistor can have a top-gate structure or a bottom-gate structure. Alternatively, a gate can be provided above and below the semiconductor layer forming the channel.

[0273] As the transistors 201, 205, and 206, a structure in which a semiconductor layer forming a channel is clamped by two gates is adopted. In addition, the two gates can also be connected, and the transistors can be driven by supplying the same signal to the two gates. Alternatively, by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other, the threshold voltage of the transistor can be controlled.

[0274] There is no particular limitation on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor or a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystalline region in a part thereof) can be used. When a semiconductor having crystallinity is used, deterioration of the transistor characteristics can be suppressed, which is therefore preferable.

[0275] The semiconductor layer of the transistor preferably uses a metal oxide (oxide semiconductor). In addition, the semiconductor layer of the transistor may also contain silicon. Examples of silicon include amorphous silicon, crystalline silicon (low-temperature polycrystalline silicon, single crystal silicon, etc.).

[0276] For example, the semiconductor layer preferably contains indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium). In particular, M is preferably one or more selected from aluminum, gallium, yttrium, or tin.

[0277] In particular, as the semiconductor layer, an oxide (IGZO) containing indium (In), gallium (Ga), and zinc (Zn) is preferably used.

[0278] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the sputtering target preferably used to form the In-M-Zn oxide is equal to or more than the atomic ratio of M. Examples of the atomic ratio of the metal elements of such a sputtering target include In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5:1:8, In:M:Zn = 6:1:6, In:M:Zn = 5:2:5, etc.

[0279] In addition, a target containing polycrystalline oxide is preferably used as the sputtering target, whereby a semiconductor layer having crystallinity can be easily formed. Note that the atomic ratio of the formed semiconductor layer is respectively within the range of ±40% of the atomic ratio of the metal elements in the above sputtering target. For example, when the composition of the sputtering target used for the semiconductor layer is In:Ga:Zn = 4:2:4.1 [atomic ratio], the composition of the formed semiconductor layer may be In:Ga:Zn = 4:2:3 [atomic ratio] or near it.

[0280] When it is described that the atomic ratio is In:Ga:Zn = 4:2:3 or around it, the following cases are included: when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. In addition, when it is described that the atomic ratio is In:Ga:Zn = 5:1:6 or around it, the following cases are included: when the atomic ratio of In is 5, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. In addition, when it is described that the atomic ratio is In:Ga:Zn = 1:1:1 or around it, the following cases are included: when the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less.

[0281] The transistors included in the circuit 42a, the transistors included in the sensor region 41a, and the transistors included in the light-emitting region 31a may have the same structure or different structures. The multiple transistors included in the circuit 42a may have the same structure or two or more different structures. Similarly, the multiple transistors included in the light-emitting region 31a may have the same structure or two or more different structures. Similarly, the multiple transistors included in the sensor region 41a may have the same structure or two or more different structures.

[0282] A connection portion 204 is provided in a region where the substrate 151 and the substrate 152 do not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 through the conductive layer 166 and the connection layer 242. The conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed on the top surface of the connection portion 204. Therefore, the connection portion 204 and the FPC 172 can be electrically connected through the connection layer 242. Note that the wiring 165 may be formed simultaneously with the conductive layer 222 or the conductive layer 223.

[0283] In addition, various optical members can be disposed on the outer surface of the substrate 152. As the optical members, a polarizing plate, a retardation plate, a light diffusion layer (diffusion film, etc.), an antireflection layer, a condensing film, etc. can be used. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that is not easily soiled, a hard coating film that suppresses damage during use, a buffer layer, etc. can also be disposed on the outer surface of the substrate 152.

[0284] The substrates 151 and 152 can be made of glass, quartz, ceramics, sapphire, resin, etc. By using a flexible material for the substrates 151 and 152, the flexibility of the sensor device can be improved.

[0285] As the adhesive layer, various curable adhesives such as ultraviolet curable adhesives and other photocurable adhesives, reaction curable adhesives, heat curable adhesives, anaerobic adhesives, etc. can be used. As these adhesives, epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene-vinyl acetate) resins, etc. can be cited. In particular, materials with low moisture permeability such as epoxy resins are preferably used. In addition, two-component mixed resins can also be used. In addition, adhesive sheets, etc. can also be used.

[0286] As the connection layer 242, an anisotropic conductive film, an anisotropic conductive paste, etc. can be used.

[0287] The light-emitting element 190 has a top emission structure, a bottom emission structure, a double-sided emission structure, etc. As the electrode on the light extraction side, a conductive film that transmits light is used. In addition, as the electrode on the non-light extraction side, a conductive film that reflects light is preferably used.

[0288] The light-emitting element 190 includes at least a light-emitting layer 193. As the layers other than the light-emitting layer 193, the light-emitting element 190 may further include layers containing substances with high hole injection properties, substances with high hole transport properties, hole blocking materials, substances with high electron transport properties, substances with high electron injection properties, or bipolar substances (substances with high electron transport and hole transport properties), etc. For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. The common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0289] The common layer 112, the light-emitting layer 193, and the common layer 114 can use low molecular weight compounds or high molecular weight compounds, and may also contain inorganic compounds. The layers constituting the common layer 112, the light-emitting layer 193, and the common layer 114 can be formed by methods such as vapor deposition methods (including vacuum vapor deposition methods), transfer methods, printing methods, inkjet methods, coating methods, etc.

[0290] The light-emitting layer 193 may also contain inorganic compounds such as quantum dots as the light-emitting material.

[0291] The active layer 113 of the sensor element 110 contains a semiconductor. As this semiconductor, inorganic semiconductors such as silicon and organic semiconductors containing organic compounds can be cited. In the present embodiment, an example of using an organic semiconductor as the semiconductor contained in the active layer is shown. By using an organic semiconductor, the light-emitting layer 193 of the light-emitting element 190 and the active layer 113 of the sensor element 110 can be formed by the same method (for example, vacuum vapor deposition method), and manufacturing equipment can be used in common, so it is preferable.

[0292] As the material of the n-type semiconductor contained in the active layer 113, fullerenes (for example, C60 , C 70 ), or derivatives thereof, and other organic semiconductor materials with an electron-accepting property. In addition, as the material of the p-type semiconductor contained in the active layer 113, examples include organic semiconductor materials with an electron-donating property such as copper(II) phthalocyanine (CuPc) or tetraphenyldibenzoperiflanthene (DBP).

[0293] For example, it is preferable to co-evaporate the n-type semiconductor and the p-type semiconductor to form the active layer 113.

[0294] As materials for the conductive layers such as the gate, source, and drain of the transistor and various wirings and electrodes constituting the sensor device, examples include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of the above metals. A single layer or a laminate of films containing these materials can be used.

[0295] In addition, as a conductive material with translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal materials (for example, titanium nitride) can also be used. In addition, when using metal materials, alloy materials (or their nitrides), it is preferable to form them thinly to have translucency. In addition, a laminate film of the above materials can be used as the conductive layer. For example, by using a laminate film of an alloy of silver and magnesium and indium tin oxide, the conductivity can be improved, so it is preferable. The above materials can also be used for the conductive layers such as various wirings and electrodes constituting the sensor device, and the conductive layers included in the display element (the conductive layers used as pixel electrodes and common electrodes).

[0296] As insulating materials that can be used for each insulating layer, examples include resins such as acrylic resin or epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, or aluminum oxide.

[0297] Figure 12B There is a connection portion 204a different from Figure 12A . In the connection portion 204a, the wiring 165 is electrically connected to the electrode 244 through the conductive layer 166 and the connection layer 243. On the top surface of the connection portion 204a, the conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed. Therefore, the connection portion 204a can be electrically connected to the electrode 244 through the connection layer 243. The electrode 244 preferably contains one or more of copper, nickel, gold, silver, and tin, etc.

[0298] [Sensor device 100B]

[0299] Figure 13A A cross-sectional view of the sensor device 100B is shown.

[0300] The sensor device 100B is different from the sensor device 100A mainly in that it includes a region CL2, a lens 149, and a protective layer 195. A circuit 32e is arranged in the region CL2. The circuit 32e includes at least a transistor 203.

[0301] By providing the protective layer 195 that covers the sensor element 110 and the light-emitting element 190, it is possible to prevent impurities such as water from mixing into the sensor element 110 and the light-emitting element 190, and thus the reliability of the sensor element 110 and the light-emitting element 190 can be improved.

[0302] In a region 228 near the end of the sensor device 100B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through an opening of the insulating layer 214. In particular, it is particularly preferable that the inorganic insulating film contained in the insulating layer 215 is in contact with the inorganic insulating film contained in the protective layer 195. Thereby, it is possible to prevent impurities from mixing into the light-emitting region 31a from the outside through the organic insulating film. Therefore, the reliability of the sensor device 100B can be improved.

[0303] Figure 13B An example in which the protective layer 195 has a three-layer structure is shown. In Figure 13B this case, the protective layer 195 includes an inorganic insulating layer 195a on the common electrode 115, an organic insulating layer 195b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0304] The ends of the inorganic insulating layer 195a and the ends of the inorganic insulating layer 195c extend to the outside of the ends of the organic insulating layer 195b and are in contact with each other. In addition, the inorganic insulating layer 195a is in contact with the insulating layer 215 (inorganic insulating layer) through an opening of the insulating layer 214 (organic insulating layer). Thereby, it is possible to surround the sensor element 110 and the light-emitting element 190 with the insulating layer 215 and the protective layer 195, and the reliability of the sensor element 110 and the light-emitting element 190 can be improved.

[0305] In this way, the protective layer 195 can also have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, the ends of the inorganic insulating film are preferably extended to the outside of the ends of the organic insulating film.

[0306] A lens 149 is provided on the surface of the substrate 151 on one side of the substrate 152. The convex surface of the lens 149 is on the side of the substrate 151. The light-receiving area (sensor area) of the sensor element 110 preferably overlaps with the lens 149 and does not overlap with the light-emitting layer 193. Thereby, the sensitivity and accuracy of the sensor using the sensor element 110 can be improved.

[0307] The refractive index of the lens 149 is preferably 1.3 or more and 2.5 or less. The lens 149 can be formed of an inorganic material or an organic material. For example, a material containing resin can be used for the lens 149. In addition, a material containing an oxide or a sulfide can be used for the lens 149.

[0308] Specifically, a resin containing chlorine, bromine or iodine, a resin containing heavy metal atoms, a resin containing an aromatic ring, a resin containing sulfur, etc. can be used for the lens 149. Or, a resin, a material of nanoparticles having a refractive index higher than that of the resin can be used for the lens 149. As the nanoparticles, titanium oxide or zirconium oxide, etc. can be used.

[0309] In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, or an oxide containing indium, gallium and zinc, etc. can be used for the lens 149. Or, zinc sulfide, etc. can be used for the lens 149.

[0310] In addition, in the sensor device 100B, the protective layer 195 and the substrate 152 are bonded by the bonding layer 142. The bonding layer 142 overlaps with the sensor element 110 and the light-emitting element 190, and the sensor device 100B adopts a solid-sealed structure.

[0311] [Sensor device 100C]

[0312] Figure 14A A cross-sectional view of the sensor device 100C is shown.

[0313] The sensor device 100C is different from the sensor device 100B in the structure of the transistor. In addition, the sensor device 100C includes a region CL3. A wiring 165 is arranged in the region CL3. Note that the sensor device 100C shows an example in which the wiring 165 and the conductive layer 222 are formed simultaneously.

[0314] The sensor device 100C includes transistors 208, 209 and 210 on the substrate 151.

[0315] The transistor 208, the transistor 209, and the transistor 210 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; a semiconductor layer including a channel formation region 231i and a pair of low-resistance regions 231n; a conductive layer 222a connected to one of the pair of low-resistance regions 231n; a conductive layer 222b connected to the other of the pair of low-resistance regions 231n; an insulating layer 213 serving as a gate insulating layer; a conductive layer 223 serving as a gate; and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 213 is located between the conductive layer 223 and the channel formation region 231i.

[0316] The conductive layer 222a and the conductive layer 222b are connected to the low-resistance regions 231n through openings respectively provided in the insulating layer 213 and the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b serves as a source electrode, and the other serves as a drain electrode.

[0317] The pixel electrode 191 of the light-emitting element 190 is electrically connected to one of the pair of low-resistance regions 231n of the transistor 208 through the conductive layer 222b.

[0318] The pixel electrode 111 of the sensor element 110 is electrically connected to the other of the pair of low-resistance regions 231n of the transistor 209 through the conductive layer 222b.

[0319] Figure 14A An example in which the insulating layer 213 covers the top surface and the side surfaces of the semiconductor layer is shown. On the other hand, in Figure 14B , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low-resistance regions 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, the structure shown in Figure 14B can be formed. Figure 14B The transistor 202 shown in Figure 14B can be replaced with the transistors 208 to 210. In

[0320] [Sensor device 100D]

[0321] Figure 15 A cross-sectional view of the sensor device 100D is shown.

[0322] In addition, the main difference between the sensor device 100D and the sensor device 100C is that it does not include the substrates 151 and 152 but includes the substrates 153, 154, the adhesive layer 155, the insulating layer 212, and the lens 149.

[0323] The substrate 153 and the insulating layer 212 are bonded by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded by the adhesive layer 142.

[0324] The sensor device 100D is formed by transferring the insulating layer 212, the transistors 208 and 209, the sensor element 110, the light-emitting element 190, etc., formed on the manufacturing substrate, onto the substrate 153. The substrates 153 and 154 preferably have flexibility. Thereby, the flexibility of the sensor device 100D can be improved.

[0325] As the insulating layer 212, an inorganic insulating film that can be used for the insulating layers 211, 213, and 215 can be used.

[0326] In addition, as an example of the sensor device 100C, the case without the lens 149 is shown, and as an example of the sensor device 100D, the case with the lens 149 is shown. The lens 149 can be appropriately set according to the use of the sensor, etc.

[0327] As described above, the sensor device of the present embodiment includes a light-emitting element in the light-emitting region and a sensor element in the sensor region, and this sensor device has the following two functions: the light-emitting region has the function of emitting light; the sensor region has the function of detecting light in a wavelength range including the peak wavelength of the light emitted by the light-emitting region. Thereby, compared with the case where the sensor is provided outside the light-emitting region or outside the sensor device, miniaturization and weight reduction of the electronic device can be achieved. In addition, an electronic device with more functions can also be realized by combining with a sensor provided outside the light-emitting region or outside the sensor device.

[0328] At least one layer other than the active layer of the sensor element can be the same as the light-emitting element. In addition, all layers other than the active layer of the sensor element can also be the same as the light-emitting element. For example, as long as a process of forming the active layer is added to the manufacturing process of the light-emitting element, the light-emitting element and the sensor element can be formed on the same substrate. In addition, the sensor element and the light-emitting element can use the same material and the same process to form the pixel electrode and the common electrode. In addition, by manufacturing the circuit electrically connected to the sensor element and the circuit electrically connected to the light-emitting element using the same material and the same process, the manufacturing process of the sensor device can be simplified. Thereby, a sensor device with high convenience having a sensor element built therein can be manufactured without complicated processes.

[0329] In addition, in the sensor device of the present embodiment, the pixel electrode included in the light-emitting element has a light-shielding function and a light-collecting function and includes a colored layer between the sensor element and the light-emitting element. This colored layer can also serve as a partition wall that electrically insulates the sensor element and the light-emitting element. Since the colored layer can absorb the diffused light in the sensor device, the sensitivity of the sensor using the sensor element can be improved.

[0330] At least a part of the structural examples shown in the present embodiment and the drawings corresponding to these examples can be implemented in appropriate combination with other structural examples or drawings.

[0331] At least a part of the present embodiment can be implemented in appropriate combination with other embodiments described in this specification.

[0332] (Embodiment 3)

[0333] In the present embodiment, an example of an electronic device that can use the sensor device according to one aspect of the present invention will be described.

[0334] In Figure 16A , the electronic device 500 described in Embodiment 1 or Embodiment 2 will be described. The electronic device 500 includes a semiconductor device 10 and a sensor device 20. The semiconductor device 10 includes a processor, a memory, a battery, an image processing circuit, a communication module, etc. Note that the semiconductor device 10 also includes a socket portion 10a, and the structure is such that the flexible sensor device 20 is inserted into the socket portion 10a.

[0335] The sensor device 20 includes light-emitting regions (31a, 31b), sensor regions (41a, 41b, 41c), and terminals composed of a plurality of electrodes 244. The light-emitting regions (31a, 31b) can emit light having different peak wavelengths. Since the sensor regions (41a, 41b, 41c) include the peak wavelengths of the light emitted from each light-emitting region within the detection range, light having different peak wavelengths can be detected simultaneously.

[0336] In Figure 16B , the electronic device 500A will be described. The electronic device 500A includes a housing 501. The housing 501 includes an opening 501a and an insertion portion 501b. The semiconductor device 10 is preferably housed in the housing 501. The sensor device 20 is inserted from the insertion portion 501b, and the sensor device 20 is electrically connected to the semiconductor device 10 through the socket portion 10a inside the housing 501. The light-emitting regions (31a, 31b) and the sensor regions (41a, 41b, 41c) are preferably located at the opening 501a.

[0337] In Figure 16CIn this, the electronic device 500B is described. The electronic device 500B is a portable terminal built into the electronic device 500. The portable terminal includes a display unit 502, and through the display unit 502, operations such as a clock 502a, sending and receiving emails 502b, a communication function 502c, battery management 502d, a calendar 502e, and a call function can be performed. The display unit 502 is provided on the outward side of the electronic device 500B, and the sensor device 20 is provided on the inward side of the electronic device 500B.

[0338] As an example, Figure 16D is a diagram of the electronic device 500B mounted on the wrist. By arranging the sensor device 20 towards the inside, the sensor device can be used as a biological monitor. For example, by detecting the amount of glucose in the blood, blood glucose levels can be managed. The detected amount of glucose is stored as data in the memory of the mobile terminal, and the change in blood glucose throughout the day can be managed. Additionally, by managing the change in blood glucose, the electronic device 500B can notify diabetic patients of the administration timing of insulin, etc. through vibration, display content, lighting, etc. Further, through the communication function 502c, this data can be sent to a server or the like.

[0339] Figure 17A is a biometric device, including a thin frame 911, an operation button 912, a sensor device 913, etc. By placing a hand or finger on the sensor device 913 or in close contact with the sensor device 913, the shape of the vein can be recognized. By sending the acquired data to a server by a wireless communication unit 914 and checking it against a database, an individual can be identified. Additionally, a password or the like can be input using the operation button. The sensor device 913 of one embodiment of the present invention can form a thin authentication device having a light-emitting area and a sensor area. Because it is thin, it is easy to install it in various devices. In addition, portability is also improved.

[0340] Figure 17B is a non-destructive testing device, including a frame 921, an operation panel 922, a transfer mechanism 923, a display 924, a detection unit 925, etc. The detection unit 925 has a sensor device. The member to be detected 926 is transferred by the transfer mechanism 923 directly below the detection unit 925. The member to be detected 926 is photographed by the sensor device 927 of one embodiment of the present invention provided in the detection unit 925, and the photographed image is displayed on the display 924. Then, the member to be detected 926 is transferred to the exit of the frame 921, and defective products are sorted and recycled. By using infrared light for photographing, defective elements such as defects or foreign substances in the non-detection member can be detected at high speed in a non-destructive manner. The sensor device 927 of one embodiment of the present invention can simultaneously form a light-emitting area and a sensor area, so the detection unit 925 can be formed inexpensively.

[0341] Figure 17C It is a food sorting device, including a housing 931, operation buttons 932, a display unit 933, a light-shielding cover 934, etc. By closely contacting the light-shielding cover 934 provided around the light-receiving part with the food to be detected such as fruits and taking pictures, foreign substances, insects, and cavities or spoilage inside the food can be detected. In addition, the sugar content or water content of the food can also be detected based on the intensity of the detected infrared light. The food sorting device can perform classification of defective products or grades or determination of the harvest period. Since the sensor device 935 of one embodiment of the present invention provided in the light-receiving part has a light-emitting area and a sensor area, a thin, lightweight, and highly portable food sorting device can be formed at low cost. In addition, the structure shown in Figure 17B can be used as a food sorting device. Alternatively, the structure shown in Figure 17C can be used as a non-destructive testing device.

[0342] This embodiment can be appropriately combined with the descriptions of other embodiments.

[0343] [Symbol description]

[0344] : G1: Wiring, G1a: Wiring, G2: Wiring, G2a: Wiring, G3: Wiring, S1: Wiring, S2: Wiring, SR1: Wiring, SR2: Wiring, 10: Semiconductor device, 10a: Socket portion, 11: Processor, 12: Memory, 13: Battery, 14: Communication device, 15: Image processing circuit, 20: Sensor device, 20a: Sensor device, 21: Light emission, 22: Light, 23a: Light, 23b: Reflected light, 23c: Light, 23d: Reflected light, 30: Region, 31: Light-emitting region, 31a: Light-emitting region, 31b: Light-emitting region, 32: Circuit, 32a: Shift register, 32b: Selector circuit, 32e: Circuit, 33: Circuit, 35: Pixel, 40: Region, 41: Sensor region, 41a: Sensor region, 41b: Sensor region, 41c: Sensor region, 42: Circuit, 42a: Circuit, 42b: Circuit, 43: Circuit, 44: Circuit, 45: Pixel, 46: Circuit, 46a: Circuit, 47: Transistor, 48: Transistor, 51: Transistor, 52: Transistor, 53: Transistor, 54: Transistor, 55: Capacitor, 56: Light-emitting element, 61: Wiring, 62: Wiring, 63: Wiring, 64: Wiring, 65: Wiring, 66: Wiring, 67: Wiring, 68: Wiring, 71: Transistor, 72: Transistor, 73: Transistor, 74: Transistor, 75: Transistor, 76: Capacitor, 77: Capacitor, 78: Sensor element, 81: Transistor, 82: Transistor, 83: Terminal, 84: Terminal, 90: Server, 91: Network, 100A: Sensor device, 100B: Sensor device, 100C: Sensor device, 100D: Sensor device, 110: Sensor element, 111: Pixel electrode, 112: Common layer, 113: Active layer, 114: Common layer, 115: Common electrode, 142: Adhesive layer, 143: Space, 146: Lens array, 149: Lens, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 182: Buffer layer, 184: Buffer layer, 190: Light-emitting element, 191: Pixel electrode, 191a: Region, 192: Buffer layer, 193: Light-emitting layer, 194: Buffer layer, 195: Protective layer, 195a: Inorganic insulation, 195b: Organic insulating layer, 195c: Inorganic insulating layer, 201: Transistor, 203: Transistor, 204: Connection portion, 204a: Connection portion, 205: Transistor, 206: Transistor, 208: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer, 212: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer, 216: Partition wall, 217: Partition wall, 218: Insulating layer, 219: Partition wall, 219a: Partition wall,221: Conductive layer, 222: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region, 231: Semiconductor layer, 231i: Channel formation region, 231n: Low-resistance region, 242: Connection layer, 243: Connection layer, 244: Electrode, 300A: Sensor device, 300B: Sensor device, 300C: Sensor device, 300K: Sensor device, 300L: Sensor device, 300M: Sensor device.,

Claims

1. A semiconductor device, comprising: a sensor device; a processor; and a communication device, wherein the sensor device includes a first pixel and a second pixel formed on a substrate, the first pixel includes a light-emitting element and a first transistor, the second pixel includes a sensor element having a photoelectric conversion function and a second transistor, a first insulating layer is provided on the first transistor and the second transistor, a first partition wall is provided on the first insulating layer, a second partition wall is provided on the first partition wall, the light emitted from the light-emitting element has a peak wavelength, the wavelength range detected by the sensor element includes the peak wavelength, the semiconductor layers of the first transistor and the second transistor contain the same elements, the pixel electrode included in the light-emitting element is provided on the first insulating layer and is electrically connected to the first transistor, the pixel electrode in the light-emitting element includes a region that is on and in contact with the first partition wall, and this region has the function of shielding the diffused light to the sensor element, the second partition wall covers the region of the pixel electrode in the light-emitting element and the end portion of the pixel electrode of the sensor element, the processor calculates the light detected by the sensor element, and the communication device transmits the result of the calculation.

2. A sensor device, comprising: a first pixel and a second pixel formed on a substrate, wherein the first pixel includes a light-emitting element and a first transistor, the second pixel includes a sensor element having a photoelectric conversion function and a second transistor, a first insulating layer is provided on the first transistor and the second transistor, a first partition wall is provided on the first insulating layer, a second partition wall is provided on the first partition wall, the light emitted from the light-emitting element has a peak wavelength, the wavelength range detected by the sensor element includes the peak wavelength, the semiconductor layers of the first transistor and the second transistor contain the same elements, the pixel electrode included in the light-emitting element is provided on the first insulating layer and is electrically connected to the first transistor, the pixel electrode in the light-emitting element includes a region that is on and in contact with the first partition wall, and this region has the function of shielding the diffused light to the sensor element, and the second partition wall covers the region of the pixel electrode in the light-emitting element and the end portion of the pixel electrode of the sensor element.

3. The sensor device according to claim 2, wherein the substrate is flexible.

4. The sensor device according to claim 2, wherein the peak wavelength is 700 nm or more and 9000 nm or less.

5. The sensor device according to claim 2, wherein the light-emitting element includes a first organic compound and a common layer, and the sensor element includes a second organic compound and the common layer.

6. The sensor device according to claim 2, wherein there is a region between the first pixel and the second pixel that does not include a conductive layer.

7. The sensor device according to claim 2, wherein both the first transistor and the second transistor contain metal oxide in the semiconductor layer.

8. The sensor device according to claim 7, wherein at least one of the first transistor and the second transistor has a back gate.

9. The sensor device according to claim 2, wherein the sensor device is configured to detect an amount of glucose in blood.

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