Plasma processing apparatus and gas introduction method

Abstract

The present invention provides a plasma processing apparatus and a gas introduction method. A gas is introduced from a side wall of a chamber to a plasma processing space at different angles. The plasma processing apparatus includes: a chamber having a side wall and a plasma processing space surrounded by the side wall; a first side gas introduction line and a second side gas introduction line configured to introduce a gas from the side wall to the plasma processing space, the first side gas introduction line including a plurality of first side gas injectors arranged symmetrically around the side wall, the plurality of first side gas injectors each configured to introduce a gas into the plasma processing space in a first direction, the second side gas introduction line including a plurality of second side gas injectors arranged symmetrically around the side wall, the plurality of second side gas injectors each configured to introduce a gas into the plasma processing space in a second direction different from the first direction.

Description

Technical Field

[0001] This invention relates to plasma processing apparatus and gas introduction method. Background Technology

[0002] For example, Patent Document 1 proposes a plasma processing apparatus comprising: a dielectric window constituting the upper part of a chamber; a gas supply unit supplying gas into the chamber from the upper part of the chamber; an antenna disposed above the chamber and surrounding the gas supply unit, generating plasma of the gas in the chamber by supplying high frequency into the chamber; and a power supply unit supplying high frequency power to the antenna.

[0003] The gas supply section has a flow path for the gas supplied to the chamber. A protrusion located at the lower part of the gas supply section and protruding into the chamber from the lower surface of the dielectric window has a first injection port that sprays the gas downward and a second injection port that sprays the gas laterally or obliquely downward.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2019-67503 Summary of the Invention

[0005] The problem the invention aims to solve

[0006] This disclosure provides a plasma processing apparatus and a gas introduction method capable of introducing gas from the sidewall of a chamber into the plasma processing space at different angles.

[0007] Solution for solving the problem

[0008] According to a technical solution of this disclosure, a plasma processing apparatus is provided, comprising: a chamber having sidewalls and a plasma processing space surrounded by the sidewalls; and a first side gas inlet line and a second side gas inlet line, the first side gas inlet line and the second side gas inlet line being configured to introduce gas from the sidewalls into the plasma processing space, the first side gas inlet line including a plurality of first side gas injectors symmetrically arranged around the sidewalls, the plurality of first side gas injectors being respectively configured to introduce gas into the plasma processing space in a first direction, the second side gas inlet line including a plurality of second side gas injectors symmetrically arranged around the sidewalls, the plurality of second side gas injectors being respectively configured to introduce gas into the plasma processing space in a second direction different from the first direction.

[0009] The effects of the invention

[0010] According to one technical solution, gas can be introduced into the plasma processing space from the side wall of the chamber at different angles. Attached Figure Description

[0011] Figure 1 This is a cross-sectional schematic diagram showing the plasma processing apparatus according to the first embodiment.

[0012] Figure 2 This is a diagram showing the internal structure of the side gas injector according to the embodiment.

[0013] Figure 3 This is a cross-sectional schematic diagram illustrating another example of the configuration of the side gas injector involved in the embodiment.

[0014] Figure 4 This is a diagram showing the branch structure of the side gas inlet pipeline involved in the embodiment.

[0015] Figure 5 This is a graph showing the relationship between the gas introduction angle and the pressure distribution on the substrate in the embodiment.

[0016] Figure 6 This is a graph showing the relationship between the total flow rate of the gas involved in the implementation method and the etching rate.

[0017] Figure 7 This is a diagram showing the flow of gas in the plasma processing space corresponding to the gas introduction angle involved in the embodiment.

[0018] Figure 8 This is a cross-sectional schematic diagram showing the plasma processing apparatus according to the second embodiment.

[0019] Figure 9 This is a graph showing the relationship between the gas introduction angle of the side gas injector and the center gas injector involved in the embodiment and the amount of reaction products deposited on the substrate.

[0020] Figure 10 This is a schematic cross-sectional view of the plasma processing apparatus involved in the first modified example.

[0021] Figure 11 This is a diagram showing the presence or absence of the regulator and the timing of gas switching in the implementation method.

[0022] Figure 12 This is a schematic cross-sectional view of the plasma processing apparatus involved in the second variation. Detailed Implementation

[0023] The following description, with reference to the accompanying drawings, illustrates the manner in which this disclosure is carried out. In the drawings, parts of the same structure are labeled with the same reference numerals, and instances of repeated description are omitted.

[0024] <First Embodiment>

[0025] [Plasma Processing Device]

[0026] First, use Figure 1 The plasma processing apparatus 10 according to the first embodiment will be described. Figure 1 This is a cross-sectional schematic diagram showing the plasma processing apparatus 10 according to the first embodiment. The plasma processing apparatus 10 has a chamber 11. The chamber 11 has a side wall 11a and a plasma processing space 11s surrounded by the side wall 11a and the dielectric window 53.

[0027] The plasma processing apparatus 10 includes a substrate support 20. The substrate support 20 is disposed within the plasma processing space 11s and is configured to support a substrate W (e.g., a wafer). The substrate support 20 has a lower electrode 21, which functions as a bias electrode. The central axis of the substrate support 20 is defined as the Z-axis.

[0028] A high-frequency power supply 30 for biasing is connected to the lower electrode 21. The high-frequency power supply 30 supplies bias RF (Radio Frequency) power with a frequency of, for example, 13 MHz to the lower electrode 21. The frequency and power of the bias RF power are controlled by the control unit 100.

[0029] The substrate support portion 20 has an electrostatic chuck 23 for holding the substrate W by electrostatic adsorption force. The substrate support portion 20 has an edge ring 24 disposed on the upper surface of the peripheral portion of the lower electrode 21 in a manner that surrounds the substrate W.

[0030] Additionally, although not illustrated, in one embodiment, the substrate support 20 may further include a temperature control module configured to adjust at least one of the electrostatic chuck 23 and the substrate W to a target temperature. The temperature control module may include a heater, a flow path, or a combination thereof. A temperature-regulating fluid such as a refrigerant or heat transfer gas flows through the flow path. The temperature control module is controlled by the control unit 100.

[0031] An exhaust port 13 is formed on the bottom surface of the chamber 11, and the exhaust port 13 is connected to an exhaust device 15. The interior of the plasma processing space 11s is vented using the exhaust device 15. The exhaust device 15 is controlled by the control unit 100.

[0032] The plasma processing apparatus 10 has a first side gas inlet line L1 and a second side gas inlet line L2. The first side gas inlet line L1 is configured to introduce gas from the side wall 11a into the plasma processing space 11s, and has a first side gas injector 61 and a valve 64a.

[0033] Multiple first side gas injectors 61 are arranged symmetrically with respect to the Z-axis around the sidewall 11a. In one embodiment, eight first side gas injectors 61 are arranged at equal intervals around the sidewall 11a (see Figure 1). Figure 4 (a) However, the number of first side gas injectors 61 is not limited to eight; any number is acceptable. The plurality of first side gas injectors 61 are configured to introduce gas into the plasma processing space 11s in a first direction from the first inlet 61a.

[0034] The first direction can be inclined upward. In this embodiment, the first direction is a direction 45 degrees upward relative to the horizontal plane, but it is not limited to this, and can be any direction within the range of 0° to 90° with the horizontal plane as positive. In addition, the first direction is not limited to inclined upward, and can be other directions such as inclined downward.

[0035] Valve 64a controls the supply and cessation of gas introduced from the first side gas injector 61 into the plasma processing space 11s by opening and closing.

[0036] The second side gas inlet line L2 is configured to introduce gas from the side wall 11a into the plasma processing space 11s, and has a second side gas injector 62 and a valve 64b.

[0037] Multiple second-side gas injectors 62 are arranged symmetrically with respect to the Z-axis around the sidewall 11a. In this embodiment, eight second-side gas injectors 62 are arranged at equal intervals around the sidewall 11a (see reference). Figure 4 (b)). However, the number of second side gas injectors 62 is not limited to eight; any number is acceptable. The multiple second side gas injectors 62 are configured to introduce gas into the plasma processing space 11s from the second inlet 62a in a second direction different from the first direction.

[0038] The second direction can be inclined downwards. In this embodiment, the second direction is a direction 45 degrees downwards relative to the horizontal plane, but it is not limited to this. It can be any direction different from the first direction within the range of 0° to -90° downwards relative to the horizontal plane. For example, the second direction can be a direction toward the edge region of the substrate support portion 20. In addition, the second direction is not limited to inclined downwards, and can be other directions different from the first direction.

[0039] Valve 64b controls the supply and cessation of gas introduced from the second side gas injector 62 into the plasma processing space 11s by opening and closing. Hereinafter, the first side gas injector 61 and the second side gas injector 62 will also be collectively referred to as the side gas injector 60.

[0040] The plasma processing apparatus 10 includes a gas supply unit GS. The gas supply unit GS has a gas supply source 44 and a distributor 48 sequentially arranged from upstream. The gas supply unit GS is in fluid communication with a first side gas inlet line L1 and a second side gas inlet line L2, and supplies gas to them. The distributor 48 is configured to control the gas supply ratio to the first side gas inlet line L1 and the second side gas inlet line L2. The distributor 48 is an example of a first flow distribution unit configured to control the gas supply ratio to the first side gas inlet line L1 and the second side gas inlet line L2. Furthermore, the first flow distribution unit is not limited to the distributor 48, and may also be a switch configured to selectively introduce gas to either the first side gas inlet line L1 or the second side gas inlet line L2.

[0041] The plasma processing apparatus 10 has a plasma generating antenna 54 disposed on the upper part or above the chamber 11 (dielectric window 53). The antenna 54 has at least one coil. Figure 1 In this example, there is an outer coil 541 and an inner coil 542. The inner coil 542 is configured such that its central axis aligns with the Z-axis. The outer coil 541 is configured to surround the inner coil 542.

[0042] At least one of the outer coil 541 and the inner coil 542 functions as a primary coil connected to the high-frequency power supply 71. Therefore, the high-frequency power supply 71 supplies source RF power to at least one of the outer coil 541 and the inner coil 542. Figure 1 In this example, the high-frequency power supply 71 is connected to the outer coil 541, and source RF power is supplied to the outer coil 541. The frequency of the source RF power is greater than the frequency of the bias RF power. In the outer coil 541 and the inner coil 542, the coil not connected to the high-frequency power supply 71 functions as a secondary coil inductively coupled to the primary coil. Figure 1 In this example, the inner coil 542 is inductively coupled to the outer coil 541. The frequency and power of the source RF power are controlled by the control unit 100. Furthermore, the outer coil 541 and the inner coil 542 can be configured at the same height or at different heights.

[0043] The control unit 100 controls each part of the plasma processing apparatus 10. The control unit 100 includes a memory such as ROM (Read Only Memory) or RAM (Random Access Memory) and a processor such as a CPU (Central Processing Unit). The memory within the control unit 100 stores process data, programs, etc. The processor within the control unit 100 reads and executes the programs stored in the memory, and controls each part of the plasma processing apparatus 10 based on the process data stored in the memory.

[0044] [Structure of the side gas injector]

[0045] Next, refer to Figure 2 Explain the structure of the side gas injector 60. Figure 2 This is a diagram showing the internal structure of the side gas injector 60 according to the embodiment. Figure 2 (a) is a diagram obtained by cutting the first side gas injector 61 along a plane passing through the central axis AX1 in the length direction. Figure 2 (b) is a diagram obtained by cutting the second side gas injector 62 along a plane passing through the central axis AX2 in the length direction.

[0046] The first side gas injector 61 and the second side gas injector 62 are formed of dielectric materials such as ceramic and quartz, and have a generally cylindrical shape. The first side gas injector 61 has a first inlet 61a at its top, which communicates with a gas pipe 61b. The second side gas injector 62 has a second inlet 62a at its top, which communicates with a gas pipe 62b. The angle θ1 formed by the central axis AX1 and the first inlet 61a is 45 degrees upward relative to the horizontal plane. The angle θ2 formed by the central axis AX2 and the second inlet 62a is 45 degrees downward relative to the horizontal plane.

[0047] [Side gas injector configuration]

[0048] return Figure 1 This describes the configuration of the side gas injectors 60. The number of first side gas injectors 61 is the same as the number of second side gas injectors 62, and the plurality of first side gas injectors 61 are configured at a different height than the plurality of second side gas injectors 62.

[0049] exist Figure 1In this configuration, a plurality of first side gas injectors 61 and a plurality of second side gas injectors 62 are arranged at equal intervals in vertical positions along the circumference of the sidewall 11a. The plurality of first side gas injectors 61 have an upward inlet angle of 45 degrees, and the plurality of second side gas injectors 62 have a downward inlet angle of 45 degrees, but are not limited to these. The first direction of the plurality of first side gas injectors 61 and the second direction of the plurality of second side gas injectors 62 can be different directions, and can be any direction, or either the first direction or the second direction can be 0 degrees (horizontal angle) relative to the horizontal plane.

[0050] Figure 3 This is a cross-sectional schematic diagram illustrating another example of the configuration of the side gas injector involved in the embodiment. Figure 3 In the plasma processing apparatus 10 shown in (a), the number of first side gas ejectors 61 is the same as the number of second side gas ejectors 62. The plurality of first side gas ejectors 61 and the plurality of second side gas ejectors 62 are arranged in an alternating configuration at the same height. Figure 3 In (a), the adjacent first side gas injector 61 and second side gas injector 62 are equally spaced, but are not limited to this.

[0051] Multiple first-side gas injectors 61 have an upward inlet angle, and multiple second-side gas injectors 62 have a downward inlet angle, which are different inlet angles. The first direction of the multiple first-side gas injectors 61 and the second direction of the multiple second-side gas injectors 62 can be different directions, and can be any direction, or either the first direction or the second direction can be 0 degrees relative to the horizontal plane.

[0052] exist Figure 3 In the plasma processing apparatus 10 shown in (b), the number of first side gas injectors 61 is the same as the number of second side gas injectors 62. Multiple first side gas injectors 61 and multiple second side gas injectors 62 are arranged in an alternating pattern at different heights along the circumference of the sidewall 11a. Figure 3 In (b), the adjacent first side gas injector 61 and second side gas injector 62 are equally spaced, but are not limited to this.

[0053] Multiple first-side gas injectors 61 have an upward inlet angle, and multiple second-side gas injectors 62 have a downward inlet angle, which are different inlet angles. The first direction of the multiple first-side gas injectors 61 and the second direction of the multiple second-side gas injectors 62 can be different directions, and can be any direction, or either the first direction or the second direction can be 0 degrees relative to the horizontal plane.

[0054] [Branch Structure of Side Gas Inlet Pipeline]

[0055] Next, refer to Figure 4 Explain the branch structure of the side gas inlet pipelines L1 and L2. Figure 4 This is a diagram showing the branch structure of the side gas inlet lines L1 and L2 involved in the embodiment, and is a top view of the side gas injector 60.

[0056] Figure 4 (a) indicates the branch configuration of the side gas inlet line L1 connected to the plurality of first side gas injectors 61. The branch configuration of the side gas inlet line L2 is the same as that of the side gas inlet line L1, and the branch configuration of the side gas inlet line L2 is arranged below the branch configuration of the side gas inlet line L1 in a direction perpendicular to the branch configuration of the side gas inlet line L1.

[0057] The following is for reference Figure 4 (a) describes the branch structure of the side gas inlet line L1, and omits the description of the branch structure of the side gas inlet line L2, which has the same structure.

[0058] The first side gas inlet line L1 has multiple bifurcated branches. The multiple bifurcated branches include a first bifurcated branch line T11, two second bifurcated branches T21 and T22, and four third bifurcated branches T31, T32, T33, and T34.

[0059] The first two-way branch line T11 includes one inlet I11 and two outlets O11 and O12. One inlet I11 of the first two-way branch line T11 is connected to the inlet I10 of the first side gas inlet line L1.

[0060] The two second bifurcated branch lines T21 and T22 each include two inlets I21 and I22 and four outlets O21, O22, O23, and O24. The two inlets I21 and I22 of the two second bifurcated branch lines T21 and T22 are respectively connected to the two outlets O11 and O12 of the first bifurcated branch line.

[0061] The four third bifurcated branches T31, T32, T33, and T34 include four inlets I31, I32, I33, and I34 and eight outlets O31, O32, O33, O34, O35, O36, O37, and O38. The four inlets I31, I32, I33, and I34 of the four third bifurcated branches T31, T32, T33, and T34 are respectively connected to the four outlets O21, O22, O23, and O24 of the two second bifurcated branches T21 and T22.

[0062] The eight outlets O31, O32, O33, O34, O35, O36, O37, and O38 of the four third bifurcated pipelines T31, T32, T33, and T34 are respectively connected to the eight first side gas injectors 61.

[0063] The distance from one inlet of the first bifurcation line T11 to the eight outlets of the four third bifurcation lines T31, T32, T33, and T34 is the same.

[0064] exist Figure 3 In the plasma processing apparatus 10 shown in (a), the branch structure of the plurality of second side gas injectors 62 is as follows: Figure 4 As shown in (b) Figure 4 The branched configurations of the plurality of first side gas injectors 61 shown in (a) are staggered. As a result, the plurality of second side gas injectors 62 are arranged at the same height as the plurality of first side gas injectors 61 and are offset by 22.5 degrees in the circumferential direction.

[0065] As described above, the plurality of first side gas injectors 61 and the plurality of second side gas injectors 62 are branched structures, which are designed to distribute gas equally to the plasma processing space 11s.

[0066] [Gas introduction methods used in plasma processing devices]

[0067] Next, a gas introduction method used in a plasma processing apparatus 10, which includes a chamber 11, a first side gas introduction line L1, and a second side gas introduction line L2, will be described. The chamber 11 has a side wall 11a and a plasma processing space 11s surrounded by the side wall 11a.

[0068] The first side gas inlet line L1 includes a plurality of first side gas injectors 61 arranged symmetrically in the circumferential direction around the side wall 11a. The second side gas inlet line L2 includes a plurality of second side gas injectors 62 arranged symmetrically in the circumferential direction around the side wall 11a.

[0069] The gas introduction method has the following steps (a) to (c).

[0070] (a) Control the amount of gas supplied to the first side gas inlet line L1 and the second side gas inlet line L2.

[0071] (b) Gas is introduced into the plasma processing space in a first direction from a plurality of first side gas injectors 61 within 11 seconds.

[0072] (c) Gas is introduced into the plasma processing space in a second direction from multiple second-side gas injectors 62 within 11 seconds. The first direction is different from the second direction.

[0073] Processes (b) and (c) can be performed simultaneously. In this case, process (a) may include the following process: controlling the gas supply ratio for the first side gas inlet line L1 and the second side gas inlet line L2 using the previously described splitter.

[0074] Steps (b) and (c) can be performed alternately. In this case, step (a) may include the following step: selectively introducing gas into the first side gas inlet line L1 or the second side gas inlet line L2 using the previously described switch.

[0075] In addition, processes (b) and (c) can be repeated.

[0076] Next, the simulation and experiment of the side gas ejector 60 of the plasma processing device 10 using the above-described structure will be described.

[0077] [Simulation 1: Correlation between gas introduction angle and pressure distribution on the substrate]

[0078] First, refer to Figure 5 This section describes the results of a simulation of the pressure distribution on the substrate when the angles of multiple first-side gas injectors 61 were changed (designated as Simulation 1). Figure 5 This is a graph showing the relationship between the gas introduction angle and the pressure distribution on the substrate in the embodiment. The following shows the conditions for Simulation 1.

[0079] <Simulation Conditions>

[0080] · Figure 5 In the low-pressure case of (a), the chamber pressure is 1.33 Pa.

[0081] · Figure 5 Under the high-pressure condition (b), the chamber pressure is 53.33 Pa.

[0082] • Side gas injector: Introduces 500 sccm of O2 gas

[0083] Figure 5 (a) and Figure 5 (b) The horizontal axis is the radial position of the substrate with a diameter of 300mm, 0mm is the center of the substrate, and 150mm is the edge of the substrate. Figure 5 (a) and Figure 5 The vertical axis of (b) represents the pressure on the substrate at each location.

[0084] Figure 5 Line A of (a) and Figure 5Line C in (b) represents the pressure distribution on the substrate when the gas introduction angle of the plurality of first side gas injectors 61 is set to 45 degrees upward relative to the horizontal plane. Figure 5 Line B of (a) and Figure 5 Line D in (b) represents the pressure distribution on the substrate when the gas introduction angle of the plurality of first side gas injectors 61 is set to 45 degrees downward relative to the horizontal plane.

[0085] Regardless of the pressure inside the chamber Figure 5 The low-pressure situation in (a) is still Figure 5 In the case of high pressure (b), when the gas introduction angle of the multiple first side gas injectors 61 is 45 degrees upward relative to the horizontal plane, the pressure in the edge region of the substrate W is lower than the pressure in the central region.

[0086] Furthermore, regardless of whether the pressure inside the chamber is low or high, when the gas introduction angle of the multiple first side gas injectors 61 is 45 degrees downward relative to the horizontal plane, the pressure in the edge region of the substrate W is higher than the pressure in the central region.

[0087] Based on the above description, by switching the first direction of the plurality of first side gas injectors 61 and / or the second direction of the plurality of second side gas injectors 62, it may be possible to control at least the pressure distribution in the cavity at the edge region of the substrate W.

[0088] [Experiment 1: Correlation between total gas flow rate and etching rate]

[0089] Next, refer to Figure 6 The results of an experiment (designated as Experiment 1) were presented using the plasma processing apparatus 10 described in the embodiment to investigate the relationship between the gas introduction angle and the etching rate. Figure 6 This is a graph showing the relationship between the total flow rate of the gas involved in the implementation method and the etching rate. The following shows the conditions of Experiment 1.

[0090] <Experimental Conditions>

[0091] · Figure 6 In the case of □: the gas inlet angle of the plurality of first side gas injectors 61 is set to 45 degrees upward (gas does not flow from the plurality of second side gas injectors 62).

[0092] · Figure 6 In the case of ◆, the gas inlet angle of the plurality of first side gas injectors 61 is set to 45 degrees downward (no gas flows from the plurality of second side gas injectors 62).

[0093] Figure 6The horizontal axis of the graph represents the total flow rate of gas introduced at 45 degrees upwards and 45 degrees downwards towards the multiple first side gas injectors 61, and the vertical axis represents the uniformity of the etching rate.

[0094] The results of Experiment 1 revealed the following tendency: when the total gas flow rate is around 200 sccm or below, and when the gas introduction angle of multiple first side gas injectors 61 is set to 45 degrees downward ( Figure 6 The etching rate is increased in the edge region of substrate W (◆). Figure 6 In this context, this tendency is referred to as "fast edge." Additionally, the following tendency was also found: when the gas introduction angle of the multiple first side gas injectors 61 is set to 45 degrees upwards ( Figure 6 The etching rate is increased in the central region of substrate W (□). Figure 6 In China, this tendency is referred to as "central speed".

[0095] Based on the above explanation, it can be seen that when the total gas flow rate is below 200 sccm, setting the gas introduction angle to 45 degrees downward results in higher etching rate uniformity compared to setting it to 45 degrees upward. Furthermore, it can be seen that when the total gas flow rate is above 300 sccm, the impact on etching rate uniformity is minimal regardless of whether the gas introduction angle is set to 45 degrees upward or downward.

[0096] [Simulation 2: Gas introduction angle and gas flow in the plasma processing space]

[0097] Next, refer to Figure 7 This section describes the results of a simulation of the gas flow in the plasma processing space when gas is introduced from multiple first-side gas injectors 61 or multiple second-side gas injectors 62 (designated as Simulation 2). Figure 7 This is a diagram showing the gas flow in the plasma processing space 11s corresponding to the gas introduction angle involved in the embodiment. The following shows the conditions of Simulation 2.

[0098] <Simulation Conditions>

[0099] • Chamber pressure: 400 mT (53.3 Pa)

[0100] • Side gas injector: Introduces 500 sccm of Ar gas

[0101] · Figure 7 In case (a): the gas inlet angle of the plurality of first side gas injectors 61 is set to 45 degrees upward (gas does not flow from the plurality of second side gas injectors 62).

[0102] · Figure 7 Case (b): The gas inlet angle of the plurality of second side gas injectors 62 is set to 45 degrees downward (gas does not flow from the plurality of first side gas injectors 61).

[0103] Figure 7 (a) and Figure 7 (b) is indicated by the arrow representing the Z-axis (see reference). Figure 1 The flow of gas in the plasma processing space on the right side for 11 seconds.

[0104] like Figure 7 As shown in (a), when the gas is introduced at an upward angle of 45 degrees and ejected toward the top wall, an airflow is generated from the central side of the substrate W toward the edge and the exhaust port 13. In this case, a flow is formed that efficiently removes the reaction products generated on the substrate W during etching.

[0105] On the contrary, such as Figure 7 As shown in (b), when the gas is introduced at a downward angle of 45 degrees and ejected toward the edge or edge ring 24 of the substrate, an airflow is generated from the edge side of the substrate W toward the center side. In this case, a flow that obstructs the discharge of reaction products on the substrate W is formed.

[0106] Based on the above explanation, by switching the gas introduction angles of the plurality of first-side gas injectors 61 and the plurality of second-side gas injectors 62, the discharge of reaction products on the substrate W can be controlled. For example, when it is desired to efficiently discharge reaction products and gases from the substrate W, the gas introduction angles of the plurality of first-side gas injectors 61 are controlled upwards. Alternatively, when it is desired to retain gas, as an example, the plurality of second-side gas injectors 62 are controlled downwards.

[0107] like Figure 7 As shown in (a), when the gas introduction angle is upward, it is preferable to set the gas introduction angle to an angle facing any side of the top wall. Additionally, as... Figure 7 As shown in (b), when the gas introduction angle is downward, it is preferable to set the gas introduction angle to an angle toward the edge of the substrate W or the edge ring 24.

[0108] <Second Implementation>

[0109] [Plasma Processing Device]

[0110] Next, use Figure 8 The plasma processing apparatus 10 according to the second embodiment will be described. Figure 8This is a cross-sectional schematic diagram showing the plasma processing apparatus 10 according to the second embodiment. The plasma processing apparatus 10 according to the second embodiment differs from the plasma processing apparatus 10 according to the first embodiment in the following aspects ( Figure 1 The difference lies in that it has a central gas injector 41, which is connected to the gas supply unit GS via a first central gas inlet line L3 and a second central gas inlet line L4. Other structures of the plasma processing apparatus 10 according to the second embodiment are the same as those of the plasma processing apparatus 10 according to the first embodiment. Therefore, the structures of the different aspects described above will be described below, while descriptions of other structures will be omitted.

[0111] A central gas injector 41 is disposed at the center of the top wall of chamber 11. The central gas injector 41 is generally cylindrical in shape and is located at the central opening of the shielding box 51 and dielectric window 53 with its central axis aligned with the Z-axis. The central gas injector 41 is configured to introduce gas into the plasma processing space 11s in both downward and lateral directions.

[0112] The upper part of the central gas injector 41 is provided with supply ports 42a and 42b for supplying gas into the central gas injector 41. The lower part of the central gas injector 41 protrudes downward from the lower surface of the dielectric window 53. The lower part of the central gas injector 41 has an inlet 43a for introducing gas downward along the Z-axis and an inlet 43b for introducing gas laterally, i.e., away from the Z-axis.

[0113] The gas supply unit GS, starting from the upstream, includes a gas supply source 44, a distributor 45, and a distributor 48. The gas supply unit GS is in fluid communication with the first central gas inlet line L3 and the second central gas inlet line L4, thereby connecting the central gas injector 41 to the gas supply unit GS. The distributor 45 is configured to control the gas supply ratio to the first central gas inlet line L3 and the second central gas inlet line L4. The distributor 45 is an example of a second flow distribution unit configured to control the gas supply ratio to the central gas injector 41 and the distributor 48.

[0114] Furthermore, the second flow distribution unit is not limited to the splitter 45, but can also be a switch configured to selectively introduce gas into the central gas injector 41 or the splitter 48. The gas supply source 44 supplies etching gases such as CF4 gas and chlorine gas into the chamber 11.

[0115] [Simulation 3: Combination of side gas injectors and central gas injectors]

[0116] Next, refer to Figure 9This describes the results of a simulation of the deposition state of reaction products on the substrate W when gas is introduced from the side gas injector 60 and the central gas injector 41 (designated as simulation 3). Figure 9 This is a graph showing the relationship between the gas introduction angle of the side gas injector 60 and the central gas injector 41 as described in the embodiment and the amount of reaction products deposited on the substrate. The conditions of Simulation 3 are shown below.

[0117] <Simulation Conditions>

[0118] • Chamber pressure: 400 mT (53.3 Pa)

[0119] • Side gas injectors and / or central gas injectors: Introduce 500 sccm of Ar gas.

[0120] • To simulate the reaction products on the substrate, 50 sccm of SiCl4 was introduced.

[0121] Figure 9 The horizontal axis represents the radial position of the substrate, with 0mm being the center of the substrate and 150mm being the edge of the substrate. Figure 9 The vertical axis represents the amount of reaction product (SiCl4) deposited on the substrate at each location. SiCl4 is an example of a reaction product generated during etching in the plasma processing apparatus 10.

[0122] Figure 9 Line E represents the amount of reaction product deposited when 500 sccm of Ar gas is introduced downwards from the central gas injector 41. At this time, no gas is supplied from the side gas injector 60.

[0123] Figure 9 Line F represents the amount of reaction product deposited when a total of 500 sccm of Ar gas is introduced at a flow rate ratio of 1:1 from the central gas injector 41 downwards and from the multiple first side gas injectors 61 upwards at a 45-degree angle.

[0124] Figure 9 Line G indicates the amount of reaction product deposited when 500 sccm of Ar gas is introduced upward at a 45-degree angle from multiple first side gas injectors 61. At this time, no gas is supplied from the central gas injector 41.

[0125] Figure 9 Line H indicates the amount of reaction product deposited when 500 sccm of Ar gas is introduced downwards at a 45-degree angle from multiple second-side gas injectors 62. At this time, no gas is supplied from the central gas injector 41.

[0126] According to the results of Simulation 3, in the case of online H (gas is introduced downward from multiple second-side gas injectors 62), the amount of reaction products deposited on the substrate W is the largest, centered on the central side. In the case of online G (gas is introduced upward from multiple first-side gas injectors 61), the amount of reaction products deposited on the substrate W is the second largest, centered on the central side.

[0127] Next, following the sequence of line F (gas introduced from the central gas injector 41 and multiple first side gas injectors 61) and line E (gas introduced from the central gas injector 41), the amount of reaction product deposited decreases.

[0128] Based on the above results, by changing the flow rate ratio of the central gas injector 41 and the side gas injector 60, the amount of reaction products deposited on the substrate can be controlled.

[0129] Thus, by combining the control of the side gas injector 60 and the control of the central gas injector 41, the control range can be expanded.

[0130] Based on the above description, in the plasma processing apparatus 10 according to the embodiment, a plurality of first side gas ejectors 61 and a plurality of second side gas ejectors 62 are arranged on the side wall 11a of the chamber 11. Furthermore, the direction (first direction) of the gas introduced from the plurality of first side gas ejectors 61 and the direction (second direction) of the gas introduced from the plurality of second side gas ejectors 62 are controlled to be different. This allows for efficient process control of etching rate, deposition amount of reaction products, film formation rate, etc.

[0131] For example, a side gas injector 60 (e.g., a plurality of second side gas injectors 62) is configured to introduce gas at an angle toward the edge or edge ring 24 of the substrate W in order to reduce uneven gas distribution on the substrate. This allows for a greater supply of reactive gas to the edge of the substrate W, reducing the etch rate deviation from the central region.

[0132] Another type of side gas injector 60 (e.g., a plurality of first side gas injectors 61) is configured to introduce gas at an angle toward the top wall. As a result, since an airflow is formed from the central side of the substrate W toward the edge side, reaction products can be efficiently discharged. Thus, the gas introduction angle of the side gas injector 60 can be set at any angle and height depending on the purpose. Alternatively, a rotation mechanism 65 can be provided in the side gas injector 60, allowing the gas introduction angle of the side gas injector 60 to be arbitrary during the process.

[0133] Furthermore, by controlling the switching or flow ratio of the gases supplied to the plurality of first side gas injectors 61 and the plurality of second side gas injectors 62, the gas flow within the chamber 11 can be altered. This enables more efficient process control and control of reaction product discharge.

[0134] For example, gas pressurized by its respective regulators 63a and 63b can be ejected from multiple first-side gas injectors 61 and multiple second-side gas injectors 62, or the flow rate can be reduced. This allows for rapid switching of the gas within chamber 11. Gas can also be introduced at a predetermined angle while switching between gas supply and supply stoppage by opening and closing valves 64a and 64b. Alternatively, valves 64a and 64b can be opened, and the gas pressure controlled by regulators 63a and 63b can be used to introduce gas at a predetermined angle and pressure from the first inlet 61a and the second inlet 62a. In this embodiment, the flow rate of gas flowing to the first-side gas injectors 61 and the second-side gas injectors 62 is divided using a flow divider 48 to switch the gas and / or pressurize it. Therefore, the flow division ratio can be changed using the flow divider 48. Furthermore, if a pressure-controlled flow divider is used, both the flow division ratio and the gas pressure can be controlled.

[0135] <Example 1>

[0136] [Plasma Processing Device]

[0137] Next, use Figure 10 The plasma processing apparatus 10 involved in the first modified example is explained. Figure 10 This is a schematic cross-sectional view of the plasma processing apparatus 10 according to the first modification. The plasma processing apparatus 10 according to the first modification differs from the plasma processing apparatus 10 according to the first embodiment in the following aspects ( Figure 1 The difference lies in that the first side gas inlet line L1 and the second side gas inlet line L2 have multiple regulators 63a and multiple regulators 63b. The other structures of the plasma processing apparatus 10 according to the first modification are the same as those according to the first embodiment. Therefore, the structures of the different aspects described above will be described below, while descriptions of other structures will be omitted. Furthermore, the plasma processing apparatus 10 according to the first modification may also have the structure of the plasma processing apparatus 10 according to the second embodiment. Figure 8 The central gas injector 41 is shown in the figure.

[0138] The first side gas inlet line L1 has a plurality of regulators 63a corresponding to a plurality of first side gas injectors 61 respectively. The plurality of regulators 63a is an example of a plurality of first regulators provided on the first side gas inlet line L1 and corresponding to a plurality of first side gas injectors 61 respectively.

[0139] In this embodiment, a plurality of first side gas injectors 61, regulators 63a and valves 64a are sequentially connected to the first side gas inlet line L1 at the top, but regulators 63a may also be configured between valves 64a and splitters 48.

[0140] In other words, multiple regulators 63a are respectively connected between the corresponding first side gas injector 61 and the splitter 48, configured to introduce pressurized gas from the corresponding first side gas injector 61 into the plasma processing space 11s.

[0141] The second side gas inlet line L2 has multiple regulators 63b corresponding to the multiple second side gas injectors 62 respectively. The multiple regulators 63b are an example of multiple second regulators provided on the second side gas inlet line L2 and corresponding to the multiple second side gas injectors 62 respectively.

[0142] In this embodiment, a plurality of second-side gas injectors 62, regulators 63b, and valves 64b located at the top are sequentially connected to the second-side gas inlet line L2. However, the regulators 63b may also be configured between the valves 64b and the distributor 48.

[0143] In other words, multiple regulators 63b are respectively connected between the corresponding second side gas injector 62 and the splitter 48, configured to introduce pressurized gas from the corresponding second side gas injector 62 into the plasma processing space 11s.

[0144] [Simulation 4: High-speed gas switching by a regulator]

[0145] Finally, refer to Figure 11 This section describes the simulation results comparing the presence or absence of the regulator and the gas switching time (set as Simulation 4). Figure 11 This is a diagram showing the presence or absence of the regulator and the timing of gas switching in the implementation method.

[0146] In specific processes such as ALD (Atomic Layer Deposition) and ALE (Atomic Layer Etching), where the gas type changes rapidly, it is crucial to accelerate gas switching times and improve processing capacity. Therefore, in the plasma processing apparatus 10 according to this embodiment, multiple regulators 63a are provided corresponding to each of the multiple first-side gas injectors 61. Additionally, multiple regulators 63b are provided corresponding to each of the multiple second-side gas injectors 62.

[0147] Furthermore, the gas is pressurized by multiple regulators 63a and 63b and ejected from multiple first side gas injectors 61 and multiple second side gas injectors 62.

[0148] In Simulation 4, after Ar gas is supplied from the plurality of first side gas injectors 61, the supply of Ar gas from the plurality of first side gas injectors 61 is stopped. Then, O2 gas is supplied from the plurality of second side gas injectors 62, and the supply of O2 gas from the plurality of second side gas injectors 62 is stopped.

[0149] In this case of switching from Ar gas to O2 gas Figure 11 Line M in (a) represents the amount of O2 gas on the substrate without regulators 63a and 63b. Figure 11 The line N in (b) indicates the amount of O2 gas on the substrate when the regulators 63a and 63b are present.

[0150] Therefore, when line N has regulators 63a and 63b, the amount of O2 gas on the substrate increases in a shorter time compared to the case where line M does not have regulators 63a and 63b. In other words, when line N has regulators 63a and 63b, the switching time from Ar gas to O2 gas is shortened compared to the case where line M does not have regulators 63a and 63b.

[0151] Figure 11 (b) indicates the moment when the Ar gas on the substrate is switched to the O2 gas without the regulators 63a and 63b. Figure 11 (c) indicates the moment when the Ar gas on the substrate is switched to O2 gas when the regulators 63a and 63b are present.

[0152] Therefore, in Figure 11 In the case shown in (b) without regulators 63a and 63b, the time from the cessation of Ar gas supply to the stabilization of O2 on the substrate is approximately 3 seconds. In contrast, in Figure 11 In the case shown in (c) with regulators 63a and 63b, due to the introduction of pressurization... Figure 11 As shown in (b), the gas pressure is approximately twice that without regulators 63a and 63b, so the time until the O2 level on the substrate stabilizes is approximately 1 second. Therefore, the switching time from Ar gas to O2 gas can be reduced by approximately 70%. Based on the above explanation, by providing regulators 63a and 63b, the gas switching time can be significantly reduced.

[0153] Alternatively, one of the Ar gas and the O2 gas can be introduced from any one of the plurality of first side gas injectors 61 and the plurality of second side gas injectors 62. Additionally, the other of the Ar gas and the O2 gas can be introduced from the other one of the plurality of first side gas injectors 61 and the plurality of second side gas injectors 62.

[0154] After Ar gas is introduced from the central gas injector 41, O2 gas can be introduced from the side gas injectors 60. By using multiple first side gas injectors 61, multiple second side gas injectors 62, and the central gas injector 41, gases can be introduced at efficient angles for each type of gas.

[0155] <Second Variation>

[0156] [Plasma Processing Device]

[0157] Next, use Figure 12 The plasma processing apparatus 10 involved in the second modified example is explained. Figure 12 This is a cross-sectional schematic diagram showing the plasma processing apparatus 10 according to the second modification. The plasma processing apparatus 10 according to the second modification differs from the plasma processing apparatus 10 according to the first embodiment in that it has a rotating mechanism 65 for rotating the side gas ejector 60. Figure 1 The plasma processing apparatus 10 in the second modification is different from that in the first embodiment. Other structures of the plasma processing apparatus 10 are the same. Therefore, the structures of the different aspects described above will be explained below, and descriptions of other structures will be omitted. Furthermore, the plasma processing apparatus 10 in the second modification may also have the same structure as that in the second embodiment. Figure 8 The central gas injector 41 is shown in the figure.

[0158] like Figure 2 As shown, the plurality of first side gas injectors 61 are generally cylindrical in shape with a central axis AX1 and have a first inlet 61a with a first angle relative to the central axis AX1. The plurality of second side gas injectors 62 are generally cylindrical in shape with a central axis AX2 and have a second inlet 62a with a second angle relative to the central axis AX2.

[0159] return Figure 12 The plasma processing apparatus 10 includes a rotation mechanism 65, which has a first rotation unit 65a and a second rotation unit 65b. The first rotation unit 65a is configured to rotate a plurality of first side gas injectors 61 about a central axis AX1. The second rotation unit 65b is configured to rotate a plurality of second side gas injectors 62 about a central axis AX2. This allows for dynamic adjustment of the gas introduction angle during the substrate processing. Consequently, the degree of freedom in gas control within the chamber is increased.

[0160] As explained above, the plasma processing apparatus according to the embodiment can introduce gas from the sidewall 11a of the chamber 11 into the plasma processing space 11s at different angles. This allows for efficient process control of etching rate, deposition amount of reaction products, film formation rate, etc. Furthermore, it enables efficient control of reaction product discharge.

[0161] It should be considered that the plasma processing apparatus disclosed herein is illustrative in all respects and is not restrictive. The above embodiments can be modified and improved in various forms without departing from the scope and spirit of the appended claims. The items described in the above embodiments can also be adopted in other structures without contradiction, and can also be combined without contradiction.

[0162] The plasma processing apparatus disclosed herein can also be applied to any type of apparatus, including atomic layer deposition (ALD) apparatus, capacitively coupled plasma (CCP), inductively coupled plasma (ICP), radial line slot antenna (RLSA), electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP). The plasma processing apparatus can be any apparatus that performs plasma processing such as film deposition or etching on a substrate. Therefore, the plasma processing apparatus disclosed herein can be applied to apparatuses comprising a chamber having a plasma processing space, a substrate support disposed within the plasma processing space, and a plasma generation unit configured to generate plasma from gas supplied to the plasma processing space.

Claims

1. A plasma processing apparatus, wherein, The plasma processing device includes: A chamber having sidewalls and a plasma processing space surrounded by the sidewalls; A first side gas inlet line and a second side gas inlet line, configured to introduce gas from the sidewall into the plasma processing space; and The gas supply unit is in fluid communication with both the first side gas inlet pipeline and the second side gas inlet pipeline. The first side gas inlet pipeline includes a plurality of first side gas injectors symmetrically arranged around the sidewall, each of which is configured to introduce gas into the plasma processing space in a first direction. The second side gas inlet pipeline includes a plurality of second side gas injectors symmetrically arranged around the sidewall. Each of the plurality of second side gas injectors is configured to introduce gas into the plasma processing space in a second direction different from the first direction. The first direction is inclined upwards, and the second direction is inclined downwards. The gas supply unit has a first flow distribution unit configured to control the gas supply ratio to the first side gas inlet line and the second side gas inlet line. The first side gas inlet pipeline has a plurality of first regulators corresponding to the plurality of first side gas injectors. The plurality of first regulators are respectively connected between the corresponding first side gas injector and the first flow distribution section, configured to introduce pressurized gas from the corresponding first side gas injector into the plasma processing space. The second side gas inlet pipeline has multiple second regulators corresponding to the multiple second side gas injectors. These multiple second regulators are respectively connected between the corresponding second side gas injector and the first flow distribution section, configured to introduce pressurized gas from the corresponding second side gas injector into the plasma processing space. The plasma processing apparatus has a central gas ejector, which is disposed at the center of the top wall of the chamber. The central gas injector is connected to the gas supply unit. The gas supply unit has a second flow distribution unit configured to control the gas supply ratio between the central gas injector and the first flow distribution unit. The plasma processing apparatus further includes a control unit, which controls the execution of the following processes: (a) Controlling the amount of gas supplied to the first side gas inlet line and the second side gas inlet line; (b) Introducing gas into the plasma processing space from the plurality of first side gas injectors in a first direction; and (c) Gas is introduced into the plasma processing space from the plurality of second side gas injectors in a second direction. In this process, steps (b) and (c) are performed simultaneously.

2. The plasma processing apparatus according to claim 1, wherein, The plasma processing apparatus also includes a substrate support portion disposed within the plasma processing space and configured as a support substrate. The second direction is the direction toward the edge region of the substrate support portion.

3. The plasma processing apparatus according to claim 1 or 2, wherein, The first direction is a direction that is 45 degrees upward relative to the horizontal plane. The second direction is a direction that is 45 degrees downward relative to the horizontal plane.

4. The plasma processing apparatus according to claim 1 or 2, wherein, The number of first side gas injectors is the same as the number of second side gas injectors, and the plurality of first side gas injectors are configured at a different height than the plurality of second side gas injectors.

5. The plasma processing apparatus according to claim 1 or 2, wherein, The number of first side gas injectors is the same as the number of second side gas injectors, and the plurality of first side gas injectors are configured at the same height as the plurality of second side gas injectors.

6. The plasma processing apparatus according to claim 1 or 2, wherein, The plurality of first side gas injectors and the plurality of second side gas injectors are arranged in an alternating pattern along the circumference of the sidewall.

7. The plasma processing apparatus according to claim 1 or 2, wherein, The first side gas inlet line has multiple bifurcated branches. The plurality of bifurcated branch lines have: The first two-way branch pipeline includes one inlet and two outlets, and the inlet of the first two-way branch pipeline is connected to the inlet of the first side gas inlet pipeline; Two second bifurcated branch lines, each comprising two inlets and four outlets, wherein the two inlets of the two second bifurcated branch lines are respectively connected to the two outlets of the first bifurcated branch line; and Four third bifurcated branch lines, each comprising four inlets and eight outlets, wherein the four inlets of the four third bifurcated branch lines are respectively connected to the four outlets of the two second bifurcated branch lines. The eight outlets of the four third bifurcated branch lines are respectively connected to the plurality of first side gas injectors. The distance from one inlet of the first bifurcation pipeline to the eight outlets of the four third bifurcation pipelines is the same.

8. The plasma processing apparatus according to claim 1 or 2, wherein, The plurality of first side gas injectors are each generally cylindrical in shape with a central axis and include a first inlet having a first angle relative to the central axis. The plurality of second side gas injectors are generally cylindrical in shape with a central axis and include a second inlet having a second angle relative to the central axis.

9. The plasma processing apparatus according to claim 8, wherein, The plasma processing device also features: The first rotating unit is configured to cause the plurality of first side gas injectors to rotate about the central axis; and The second rotating unit is configured to cause the plurality of second side gas injectors to rotate about the central axis.

10. A plasma processing apparatus, wherein, The plasma processing device includes: A chamber having sidewalls and a plasma processing space surrounded by the sidewalls; A first side gas inlet line and a second side gas inlet line, configured to introduce gas from the sidewall into the plasma processing space; and The gas supply unit is in fluid communication with both the first side gas inlet pipeline and the second side gas inlet pipeline. The first side gas inlet pipeline includes a plurality of first side gas injectors symmetrically arranged around the sidewall, each of which is configured to introduce gas into the plasma processing space in a first direction. The second side gas inlet pipeline includes a plurality of second side gas injectors symmetrically arranged around the sidewall. Each of the plurality of second side gas injectors is configured to introduce gas into the plasma processing space in a second direction different from the first direction. The first direction is inclined upwards, and the second direction is inclined downwards. The gas supply unit has a first flow distribution unit configured to selectively introduce gas into either the first side gas inlet line or the second side gas inlet line. The first side gas inlet pipeline has a plurality of first regulators corresponding to the plurality of first side gas injectors. The plurality of first regulators are respectively connected between the corresponding first side gas injector and the first flow distribution section, configured to introduce pressurized gas from the corresponding first side gas injector into the plasma processing space. The second side gas inlet pipeline has multiple second regulators corresponding to the multiple second side gas injectors. These multiple second regulators are respectively connected between the corresponding second side gas injector and the first flow distribution section, configured to introduce pressurized gas from the corresponding second side gas injector into the plasma processing space. The plasma processing apparatus has a central gas ejector, which is disposed at the center of the top wall of the chamber. The central gas injector is connected to the gas supply unit. The gas supply unit has a second flow distribution unit configured to control the gas supply ratio between the central gas injector and the first flow distribution unit. The plasma processing apparatus further includes a control unit, which controls the execution of the following processes: (a) Controlling the amount of gas supplied to the first side gas inlet line and the second side gas inlet line; (b) Introducing gas into the plasma processing space from the plurality of first side gas injectors in a first direction; and (c) Gas is introduced into the plasma processing space from the plurality of second side gas injectors in a second direction. In this process, steps (b) and (c) are performed alternately.

11. The plasma processing apparatus according to claim 10, wherein, The first side gas inlet line has multiple bifurcated branches. The plurality of bifurcated branch lines have: The first two-way branch pipeline includes one inlet and two outlets, and the inlet of the first two-way branch pipeline is connected to the inlet of the first side gas inlet pipeline; Two second bifurcated branch lines, each comprising two inlets and four outlets, wherein the two inlets of the two second bifurcated branch lines are respectively connected to the two outlets of the first bifurcated branch line; and Four third bifurcated branch lines, each comprising four inlets and eight outlets, wherein the four inlets of the four third bifurcated branch lines are respectively connected to the four outlets of the two second bifurcated branch lines. The eight outlets of the four third bifurcated branch lines are respectively connected to the plurality of first side gas injectors. The distance from one inlet of the first bifurcation pipeline to the eight outlets of the four third bifurcation pipelines is the same.

12. The plasma processing apparatus according to claim 10, wherein, The plurality of first side gas injectors are each generally cylindrical in shape with a central axis and include a first inlet having a first angle relative to the central axis. The plurality of second side gas injectors are generally cylindrical in shape with a central axis and include a second inlet having a second angle relative to the central axis.

13. The plasma processing apparatus according to claim 12, wherein, The plasma processing device also features: The first rotating unit is configured to cause the plurality of first side gas injectors to rotate about the central axis; and The second rotating unit is configured to cause the plurality of second side gas injectors to rotate about the central axis.

14. A gas introduction method, which is a gas introduction method used in a plasma processing apparatus, wherein, The plasma processing device includes: A chamber having sidewalls and a plasma processing space surrounded by the sidewalls; The first side gas inlet line and the second side gas inlet line; and The gas supply unit is in fluid communication with both the first side gas inlet pipeline and the second side gas inlet pipeline. The first side gas inlet line includes a plurality of first side gas injectors arranged symmetrically in the circumferential direction around the sidewall. The second side gas inlet line includes a plurality of second side gas injectors arranged circumferentially symmetrically around the sidewall. The gas supply unit has a first flow distribution unit configured to control the gas supply ratio to the first side gas inlet line and the second side gas inlet line. The first side gas inlet pipeline has a plurality of first regulators corresponding to the plurality of first side gas injectors. The plurality of first regulators are respectively connected between the corresponding first side gas injector and the first flow distribution section, configured to introduce pressurized gas from the corresponding first side gas injector into the plasma processing space. The second side gas inlet pipeline has multiple second regulators corresponding to the multiple second side gas injectors. These multiple second regulators are respectively connected between the corresponding second side gas injector and the first flow distribution section, configured to introduce pressurized gas from the corresponding second side gas injector into the plasma processing space. The plasma processing apparatus has a central gas ejector, which is disposed at the center of the top wall of the chamber. The central gas injector is connected to the gas supply unit. The gas supply unit has a second flow distribution unit configured to control the gas supply ratio between the central gas injector and the first flow distribution unit. The gas introduction method comprises the following steps: (a) Controlling the amount of gas supplied to the first side gas inlet line and the second side gas inlet line; (b) Introducing gas into the plasma processing space from the plurality of first side gas injectors in a first direction; and (c) Gas is introduced into the plasma processing space from the plurality of second side gas injectors in a second direction. The first direction is different from the second direction, wherein the first direction is inclined upwards, and the second direction is inclined downwards. In this process, steps (b) and (c) are performed simultaneously. Step (a) includes a step of controlling the gas supply ratio for the first side gas inlet line and the second side gas inlet line through the first flow distribution unit.

15. A gas introduction method, which is a gas introduction method used in a plasma processing apparatus, wherein, The plasma processing device includes: A chamber having sidewalls and a plasma processing space surrounded by the sidewalls; The first side gas inlet line and the second side gas inlet line; and The gas supply unit is in fluid communication with both the first side gas inlet pipeline and the second side gas inlet pipeline. The first side gas inlet line includes a plurality of first side gas injectors arranged symmetrically in the circumferential direction around the sidewall. The second side gas inlet line includes a plurality of second side gas injectors arranged circumferentially symmetrically around the sidewall. The gas supply unit has a first flow distribution unit configured to selectively introduce gas into either the first side gas inlet line or the second side gas inlet line. The first side gas inlet pipeline has a plurality of first regulators corresponding to the plurality of first side gas injectors. The plurality of first regulators are respectively connected between the corresponding first side gas injector and the first flow distribution section, configured to introduce pressurized gas from the corresponding first side gas injector into the plasma processing space. The second side gas inlet pipeline has multiple second regulators corresponding to the multiple second side gas injectors. These multiple second regulators are respectively connected between the corresponding second side gas injector and the first flow distribution section, configured to introduce pressurized gas from the corresponding second side gas injector into the plasma processing space. The plasma processing apparatus has a central gas ejector, which is disposed at the center of the top wall of the chamber. The central gas injector is connected to the gas supply unit. The gas supply unit has a second flow distribution unit configured to control the gas supply ratio between the central gas injector and the first flow distribution unit. The gas introduction method comprises the following steps: (a) Controlling the amount of gas supplied to the first side gas inlet line and the second side gas inlet line; (b) Introducing gas into the plasma processing space from the plurality of first side gas injectors in a first direction; and (c) Gas is introduced into the plasma processing space from the plurality of second side gas injectors in a second direction. The first direction is different from the second direction, wherein the first direction is inclined upwards, and the second direction is inclined downwards. In this process, steps (b) and (c) are performed alternately. Step (a) includes the step of selectively introducing gas into the first side gas inlet line or the second side gas inlet line through the first flow distribution unit.

16. The gas introduction method according to claim 15, wherein, The gas introduction method also includes the following steps: (d) Repeat steps (b) and (c).

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