Substrate processing equipment

Abstract

A substrate processing apparatus capable of minimizing the influence of a filling gas in a lower space on substrate processing comprises: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transferred to the exhaust unit through a first channel, a second gas in the lower space below the substrate supporting unit is transferred to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based on and claims priority under 35 U.S.C. §119 to U.S. patent application No. 62 / 942,038 filed in the U.S. Patent and Trademark Office on November 29, 2019, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an improved exhaust structure. Background Art

[0004] In substrate processing equipment, the reaction gases introduced into the reaction chamber are exhausted to the outside through the exhaust space. However, some of the reaction gases are introduced into the bottom of the heating block, particularly the bottom of the reactor, on which a base, such as a substrate mounting portion, is mounted. In particular, when a non-homogeneous gas is supplied, reaction byproducts are generated in the lower space of the chamber. These reaction byproducts become contaminants in the processed substrates and reduce the yield of the device. Furthermore, when highly corrosive cleaning gases are used to remove the reaction byproducts, there is the problem of damage to chamber components and, consequently, a shortened lifespan of the substrate processing equipment.

[0005] To prevent the reaction gas supplied to the reaction space from flowing into the bottom of the reactor, gas is supplied from the bottom of the reactor. This gas is also called a filler gas because it fills the bottom of the reactor, and is typically an inert gas such as Ar or N2. The filler gas balances the pressure between the reaction space above the substrate mounting portion and the lower space of the reactor, preventing the reaction gas from entering the lower space of the reactor. U.S. Patent Publication No. 2018-0155836 discloses a substrate processing apparatus configuration using this filler gas. Summary of the Invention

[0006] One or more embodiments include a substrate processing apparatus capable of minimizing the influence of a filling gas on substrate processing when achieving pressure balance between a reaction space and a lower space of a reactor using the filling gas.

[0007] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0008] According to one or more embodiments, a substrate processing apparatus includes: a substrate supporting unit; at least one ring disposed to surround the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transferred to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transferred to the exhaust unit through a second channel, and the first channel and the second channel can be separated by the at least one ring.

[0009] According to an example of the substrate processing apparatus, the at least one ring may include an outer ring disposed to surround the substrate supporting unit; and a flow control ring disposed between the substrate supporting unit and the outer ring.

[0010] According to another example of the substrate processing apparatus, the first channel and the second channel may be separated by an outer ring.

[0011] According to another example of the substrate processing apparatus, the flow control ring may include a first portion disposed to overlap with at least a portion of a substrate supporting unit; a second portion extending from the first portion along a side of the substrate supporting unit; and a third portion disposed to overlap with at least a portion of an outer ring from the second portion.

[0012] According to another example of the substrate processing equipment, at least one of the exhaust duct and the outer ring may include a curved structure, wherein the second portion of the flow control ring and the outer ring are separated from each other to form a space, and the curved surface may be configured to help exhaust the reaction gas located in the space to the first channel.

[0013] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include: a support configured to support the processing unit and the exhaust unit, the first channel may be formed between the exhaust unit and the outer ring, and the second channel may be formed between the outer ring and the support.

[0014] According to another example of the substrate processing apparatus, the substrate supporting unit may be configured to be vertically movable, and the flow control ring may be configured to contact the substrate supporting unit and the outer ring surface when the substrate supporting unit moves upward, and to move up and down with the vertical movement of the substrate supporting unit.

[0015] According to another example of the substrate processing apparatus, the exhaust efficiency of the first channel C1 and the exhaust efficiency of the second channel C2 may vary according to the degree of vertical movement of the substrate supporting unit.

[0016] According to another example of the substrate processing apparatus, the first channel and the second channel may be separated by a flow control ring.

[0017] According to another example of the substrate processing apparatus, the flow control ring may include a first portion disposed to overlap at least a portion of the outer ring; and a second portion extending from the first portion along a side of the substrate supporting unit.

[0018] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a support configured to support the processing unit and the exhaust unit, a first channel may be formed between the exhaust unit and the flow control ring, and a second channel may be formed between the flow control ring and the outer ring.

[0019] According to another example of the substrate processing apparatus, the substrate supporting unit may be configured to be vertically movable, and when the substrate supporting unit moves upward, the flow control ring may self-align while sliding relative to the outer ring by a thrust of the substrate supporting unit.

[0020] According to one or more embodiments, a substrate processing apparatus includes: a substrate supporting unit; at least one ring disposed to surround the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein the reaction space can be communicated with the exhaust space of the exhaust unit via a first channel between the exhaust unit and the at least one ring, and when the substrate supporting unit moves upward, the at least one ring can be configured to contact a surface of the substrate supporting unit and move up and down with the vertical movement of the substrate supporting unit.

[0021] According to an example of the substrate treating apparatus, the second gas in the lower space below the substrate supporting unit may be transferred to the exhaust unit through the second channel, and the first channel and the second channel may be separated by at least one ring.

[0022] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a support member configured to support the processing unit and the exhaust unit, the at least one ring may include an outer ring, the first channel may be between the exhaust unit and the outer ring, and the second channel may be between the outer ring and the support member.

[0023] According to an example of the substrate processing apparatus, the at least one ring may further include a flow control ring disposed between the outer ring and the substrate supporting unit.

[0024] According to another example of the substrate processing apparatus, at least one ring may include: an outer ring disposed to surround a substrate supporting unit; and a flow control ring disposed between the substrate supporting unit and the outer ring, wherein the first channel may be between the exhaust unit and the flow control ring, and the second channel may be between the flow control ring and the outer ring.

[0025] According to one or more embodiments, a substrate processing apparatus includes: a substrate supporting unit configured to be movable in a first direction; at least one ring disposed around the substrate supporting unit; and a processing unit on the substrate supporting unit, wherein the at least one ring can be configured to move in a second direction different from the first direction by movement of the substrate supporting unit in the first direction.

[0026] According to an example of the substrate processing apparatus, the first gas in the reaction space above the substrate supporting unit is exhausted through the first channel, the second gas in the lower space below the substrate supporting unit is exhausted through the second channel, and the first channel and the second channel may be separated by at least one ring.

[0027] According to another example of the substrate processing apparatus, at least one ring may be configured to contact the substrate supporting unit when the substrate supporting unit moves in a first direction, and may be configured to self-align while moving in a second direction by a force generated when the substrate supporting unit continues to move in the first direction while in contact with the at least one ring. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent through the following description in conjunction with the accompanying drawings, in which:

[0029] Figure 1 and 2 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0030] Figures 3 to 5 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0031] Figure 6 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0032] Figure 7 and 8 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0033] Figures 9 to 11 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0034] Figures 12 to 14 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0035] Figure 15 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0036] Figure 16 yes Figure 15 A partial enlarged view of a substrate processing device;

[0037] Figure 17 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0038] Figure 18 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0039] Figure 19 yes Figure 18 A partial enlarged view of a substrate processing device;

[0040] Figure 20 and 21 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept;

[0041] Figure 22 is a diagram for explaining a ring self-alignment process performed according to the rise of the heating block; and

[0042] Figure 23 yes Figure 22 A view of the ring is shown. DETAILED DESCRIPTION

[0043] With reference now to embodiment in detail, the example of embodiment is shown in the accompanying drawings, wherein the same reference numerals represent the same elements from time to time. In this regard, the present embodiment can have different forms and should not be construed as being limited to the description set forth herein. Therefore, the following only describes the embodiment with reference to the accompanying drawings to explain the various aspects of this specification. As used herein, the term "and / or" includes any and all combinations of one or more related listed items. When an expression such as "at least one" precedes an element list, it modifies the entire element list and does not modify the individual elements in the list.

[0044] The terms used herein are for the purpose of describing specific embodiments and are not intended to limit the present disclosure. As used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms, unless the context clearly indicates otherwise. It will also be understood that the terms "comprises", "includes", and variations thereof used herein specify the presence of the features, integers, steps, processes, components, parts, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, processes, components, parts, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0045] It will be understood that although the terms first, second, etc. may be used herein to describe various components, parts, regions, layers, and / or portions, these components, parts, regions, layers, and / or portions should not be limited by these terms. These terms do not indicate any order, quantity, or importance, but are merely used to distinguish between components, regions, layers, and / or portions. Thus, without departing from the teachings of the embodiments, a first component, component, region, layer, and / or portion discussed below may be referred to as a second component, component, region, layer, and / or portion.

[0046] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings, in which embodiments of the present disclosure are schematically shown. In the drawings, variations from the shapes shown are to be expected due to, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments of the present disclosure should not be construed as limited to the specific shapes shown herein, but may include deviations in shape resulting from, for example, the manufacturing process.

[0047] Figure 1 and 2 is a view of a substrate treating apparatus according to an embodiment of the inventive concept. Figure 1 A substrate processing apparatus and a portion of the substrate processing apparatus (a cross section of a portion where an opening of the exhaust unit 120 is not formed) are shown. Figure 2 The substrate processing apparatus and another portion of the substrate processing apparatus (a cross section of a portion forming the opening OP of the exhaust unit 120 ) are shown.

[0048] Reference Figure 1 and 2 The substrate processing apparatus may include a partition 100 , a substrate supporting unit 150 , a processing unit 110 , an exhaust unit 120 , and at least one ring R. The substrate processing apparatus may include a reaction space 51 and an exhaust space 55 connected to the reaction space 51 .

[0049] The partition 100 is a chamber for accommodating the substrate support unit 150, which may also be referred to as a chamber. In one embodiment, the reactor including the reaction space 51 is referred to as an inner chamber, and the overall structure of the substrate processing equipment surrounding multiple reactors (e.g., four reactors) is referred to as an outer chamber. The exhaust duct 18 may be provided in the partition 100. In some embodiments, the exhaust duct 18 may be formed to extend along the interior of the side wall of the partition 100. In one embodiment, the substrate processing equipment includes a first surface and a second surface adjacent to the first surface, and the exhaust duct 18 may extend along the edge between the first surface and the second surface. In other embodiments, the exhaust duct 18 may be formed to extend along the interior of the lower wall of the partition 100.

[0050] The processing unit 110 may be located on a substrate supporting unit 150 configured to support a substrate. A reaction space 51 may be defined between the substrate supporting unit 150 and the processing unit 110. The processing unit 110 may serve as a first cover defining an upper surface of the reaction space 51. In other words, the first cover on the substrate supporting unit may include at least one processing unit 110.

[0051] The processing unit 110 may include components that perform appropriate functions depending on the function of the substrate processing apparatus. For example, when the substrate processing apparatus performs a deposition function, the processing unit 110 may include a reactant supplier (e.g., a showerhead assembly). In another embodiment, when the substrate processing apparatus performs a polishing function, the processing unit 110 may include a polishing pad.

[0052] The processing unit 110 may be a conductor and may be used as an electrode for generating plasma. That is, the processing unit 110 may be used as one electrode for generating plasma. Hereinafter, the processing unit 110 in this manner (the manner in which the processing unit 110 is used as an electrode) is referred to as a gas supply electrode.

[0053] The substrate support unit 150 may be configured to provide an area where an object to be processed (not shown), such as a semiconductor or display substrate, is located. The substrate support unit 150 may be supported by a driver (not shown) capable of vertical and / or rotational movement. Furthermore, the substrate support unit 150 may be a conductor and may serve as an electrode for generating plasma (i.e., an electrode opposite to a gas supply electrode).

[0054] The exhaust unit 120 may be located between the processing unit 110 and the support member TLD. The exhaust unit 120 may extend to surround the reaction space 51. Gas in the reaction space 51 may be exhausted to the exhaust port 13 through the exhaust unit 120.

[0055] In one embodiment, the exhaust unit 120 may serve as a second cover defining the side surface of the reaction space 51. The second cover including the exhaust unit 120 may include an exhaust space 55 connected to the reaction space 51. Therefore, the exhaust unit 120 may provide the exhaust space 55. In addition, the exhaust unit 120 may provide a space in which the processing unit 110 is accommodated. When the processing unit 110 is accommodated in this space, the processing unit 110 may be in contact with the exhaust unit 120.

[0056] The exhaust unit 120 may include a partition wall W between the reaction space 51 and the exhaust space 55. A first surface (e.g., an outer surface) of the partition wall W may define the reaction space 51, while a second surface (i.e., an inner surface facing the first surface) of the partition wall W may define the exhaust space 55. For example, the reaction space 51 may be defined by the first surface side of the partition wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110 as the first cover. In other words, the side of the reaction space 51 may be defined by the partition wall W of the exhaust unit 120.

[0057] The exhaust unit 120 can provide a portion of the space for objects to be processed. For example, when the substrate processing apparatus performs a deposition function, the reaction space 51 used for deposition can be defined by the exhaust unit 120. Furthermore, an exhaust space 55 can be defined within the exhaust unit 120. The reaction space 51 can be connected to the exhaust port 13 via the exhaust space 55 of the exhaust unit 120. More specifically, the gas in the reaction space 51 can be exhausted to the exhaust port 13 through the first channel C1, the exhaust space 55, and the opening OP.

[0058] In one example, the exhaust unit 120 may include a connecting wall C and an outer wall O extending from the partition wall W. The outer wall O of the exhaust unit 120 is arranged parallel to the partition wall W and may contact the support member TLD. An opening OP may be formed in the outer wall O, and the exhaust unit 120 and the exhaust port 13 may be connected to each other through the opening OP. The connecting wall C of the exhaust unit 120 may extend to connect the partition wall W to the outer wall O. The connecting wall C may provide a contact surface with the processing unit 110. The processing unit 110, which serves as the first cover, and the exhaust unit 120, which serves as the second cover, may contact each other through the contact surface.

[0059] The support member TLD may contact the exhaust unit 120 to support the processing unit 110 and the exhaust unit 120. The support member TLD may be supported by the partition 100. As described above, the support member TLD may serve as a top cover supported by the partition 100 to cover the outer chamber while supporting the processing unit 110 as a first cover and the exhaust unit 120 as a second cover.

[0060] The support member TLD may be between the partition 100 and a cover (e.g., a second cover including the exhaust unit 120). Furthermore, the support member TLD may be between the partition 100 and the exhaust port 13. The support member TLD may include a path P that connects the exhaust port 13 to the exhaust line 18 of the partition 100. In other embodiments, a sealing member (not shown) may be between the support member TLD and the partition. The sealing member may extend along the circumference of the exhaust line 18 or path P, thereby preventing leakage of gas from the path P to the exhaust line 18.

[0061] At least one ring R may be provided to surround the substrate support unit 150. For example, the at least one ring R may include a flow control ring FCR. The flow control ring FCR may be located below the exhaust unit 120. More specifically, the flow control ring FCR may be arranged to vertically overlap at least a portion of the exhaust unit 120. Due to this overlapping arrangement, a first channel C1 may be formed between the flow control ring FCR and the exhaust unit 120. As a result, the first gas (e.g., source gas and / or reactant gas) in the reaction space 51 may be transferred to the exhaust space 55 of the exhaust unit 120 via a first surface (e.g., an upper surface) of the flow control ring FCR.

[0062] In more detail, the partition wall W of the exhaust unit 120 may provide a first channel C1 connecting the reaction space 51 to the exhaust space 55. For example, the first channel C1 may be formed between the exhaust unit 120 and at least one ring R, particularly between the exhaust unit 120 and the flow control ring FCR. The first channel C1 may serve as a channel between the reaction space 51 and the exhaust space 55. Therefore, the reaction space 51 and the exhaust space 55 may communicate with each other through the first channel C1 provided by the partition wall W.

[0063] The flow control ring FCR can be separated from the support member TLD to form a second channel C2. The flow control ring FCR can move laterally on the substrate support unit 150 (i.e., slide against the substrate support unit 150). By adjusting the width or spacing of the second channel C2 through lateral movement, the pressure balance between the reaction space 51 and the lower space 57 below the substrate support unit 150 (i.e., the inner space of the outer chamber) can be controlled.

[0064] The second gas introduced into the lower space 57 through the filling gas inlet 114 can be transferred to the exhaust space 55 through the second channel C2. In more detail, the second gas in the lower space 57 can be transferred to the exhaust space 55 of the exhaust unit 120 through the second surface (e.g., side surface) of the flow control ring FCR.

[0065] The support TLD may provide a second channel C2 connecting the lower space 57 to the exhaust space 55. For example, the second channel C2 may be formed between the support TLD and at least one ring R, particularly between the support TLD and the flow control ring FCR. The second channel C2 may serve as a passage between the lower space 57 and the exhaust space 55. Therefore, the lower space 57 and the exhaust space 55 may communicate with each other through the second channel C2 provided by the support TLD.

[0066] In this way, the first gas in the reaction space 51 and the second gas in the lower space 57 can move through different channels (i.e., the first channel C1 and the second channel C2). The first gas and the second gas that move to the different channels can meet each other at a point other than the reaction space 51. For example, the first gas and the second gas can meet each other outside the reaction space 51. In more detail, the first gas and the second gas can meet each other below the exhaust unit 120 located outside the reaction space 51.

[0067] In one example, the first gas and the second gas can be transferred from the corresponding channels C1 and C2 to the exhaust unit 120 through a junction I below the exhaust unit 120. The junction I can be provided outside the partition wall W. More specifically, the junction I can be provided outside the side surface of the partition wall W where the partition wall W contacts the reaction space 51. In one example, the junction I can be below the partition wall W of the exhaust unit 120. In another example, the junction I can be the exhaust space 55 in the exhaust unit 120.

[0068] In either example, the first gas in the reaction space 51 and the second gas in the lower space 57 will not meet each other in the reaction space 51. Therefore, the first gas (e.g., reaction gas) and the second gas (e.g., filler gas) can be prevented from colliding in the substrate edge region. In other words, by configuring the substrate processing apparatus so that the first gas in the reaction space 51 and the second gas in the lower space 57 meet each other outside the surface of the partition wall in contact with the reaction space 51, turbulence that may occur in the substrate edge region can be prevented.

[0069] Furthermore, the first channel C1, through which the first gas in the reaction space 51 passes, and the second channel C2, through which the second gas in the lower space 57 passes, can be separated by at least one ring R. Separation of the channels here means that the two channels extend without encountering each other. Therefore, the first channel C1 and the second channel C2, separated by at least one ring R, particularly the flow control ring FCR, can each extend without encountering each other. The first channel C1 and the second channel C2, separated by the flow control ring FCR, can potentially meet at a junction I outside the flow control ring FCR and be transported to the exhaust space 55.

[0070] Thus, according to embodiments of the present inventive concept, the effect of the fill gas supplied from the lower portion of the reactor on the processing on the substrate can be minimized. In addition, according to embodiments of the present inventive concept, rapid gas exhaust can be achieved by allowing the gas to be diverted and exhausted through at least one ring structure (such as a flow control ring).

[0071] Figures 3 to 5 is a view of a substrate processing apparatus according to some embodiments of the present inventive concept. In more detail, Figure 3A portion of the substrate processing apparatus (eg, exhaust lines 18 and 28 , connection port CP, external path EC connected to an external pump, etc.) is shown except for the cover (ie, the processing unit and the exhaust unit) and the exhaust port. Figure 4 Observed from the first direction Figure 3 View, Figure 5 Observed from the second direction Figure 3 The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0072] refer to Figures 3 to 5 , exhaust pipes 18 and 28 are formed in the partition 100. The exhaust pipes 18 and 28 are connected to the external path EC through the connection port CP, and the external path EC is connected to the main exhaust path 211. Therefore, the gas in the reaction space and the gas in the lower space are exhausted to the exhaust pump EP through the exhaust ports 13 and 23, the exhaust pipes 18 and 28, the external path EC, and the main exhaust path 211. Although not shown in the drawings, according to an embodiment of the present inventive concept, each exhaust port 13 and 23 is provided with a flow control unit.

[0073] like Figure 4 As shown, two reactors R1a and R1b in a first direction use internal exhaust lines 18a and 18b, while the remaining two reactors in a direction opposite to the first direction use other internal exhaust lines 28a and 28b. The two internal exhaust lines 18 and 28 are connected to an external path EC via connection ports CP and CP', respectively. The external path EC can be implemented in one configuration or in multiple configurations.

[0074] As a result, it can be seen that the four reactors use at least one of the external paths EC and EC', the main exhaust path 211 and the exhaust pump EP. An isolation valve 210 may be added to the main exhaust path 211. Therefore, during maintenance, the isolation valve 210 can protect the exhaust pump EP from the influence of the external atmosphere. In addition, a pressure control valve (such as a throttle valve) may be added to the main exhaust path 211. The external path EC may be fixed so as not to move into close contact with the lower surface of the partition 100 of the outer chamber. In an alternative embodiment, the two inner exhaust lines 18 and 28 may be connected to each other within the bottom wall of the partition 100 of the outer chamber and directly connected to the main exhaust path 211 without the external path EC.

[0075] Reference again Figure 3, the first external path EC connected to the first connection port CP may extend toward the first corner portion C1 of the outer chamber under the partition 100. In addition, the second external path EC' connected to the second connection port CP' (not shown) may extend toward the second corner portion C2 of the outer chamber under the partition 100. The exhaust pump EP may be arranged on one surface of the substrate processing apparatus, for example, corresponding to the center between the first corner portion C1 and the second corner portion C2. The first external path EC may extend from a portion extending to the first corner portion C1 to the exhaust pump EP. Moreover, the second external path EC' may extend from a portion extending to the second corner portion C2 to the exhaust pump EP.

[0076] Figure 6 1 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept. The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0077] Figure 6 There is shown an upper surface of the multi-reactor chamber 311. A plurality of reactors RT are arranged in the chamber 311, and one side of each reactor RT is connected to an exhaust port 313. Figure 6 It is shown that each reactor RT is connected to each exhaust port 313 , and the exhaust ports 313 are asymmetrically disposed with respect to the center of each reactor RT.

[0078] A plurality of exhaust ducts (not shown) may be formed in the partition of chamber 311. For example, chamber 311 may be rectangular in shape, and the plurality of exhaust ducts may include a first exhaust duct, a second exhaust duct, a third exhaust duct, and a fourth exhaust duct. In some embodiments, the first to fourth exhaust ducts may be arranged to correspond to the four vertices of the rectangle.

[0079] The chamber 311 may include a first reactor, a second reactor, a third reactor, and a fourth reactor. Each reactor may include a substrate supporting unit, at least one ring, a processing unit, an exhaust unit, and an exhaust port.

[0080] In more detail, the first reactor may include a first substrate supporting unit (not shown) housed in a partition of a chamber 311, at least one first ring surrounding the first substrate supporting unit, a first processing unit 312 on the first substrate supporting unit, a first exhaust unit 314 connected to a first reaction space between the first substrate supporting unit and the first processing unit 312, and a first exhaust port 313 connected to at least a portion of the first exhaust unit 314. As described above, the gas in the first reaction space and the gas in the lower space below the first substrate supporting unit may meet each other outside the first reaction space. In addition, the gas in the first reaction space and the gas in the lower space below the first substrate supporting unit may be transmitted to the first exhaust unit 314 through different channels. The different channels may be separated by the at least one first ring. The different channels may also extend along different surfaces of the at least one first ring.

[0081] The second reactor may include a second substrate supporting unit (not shown) housed in a partition of the chamber 311, at least one second ring surrounding the second substrate supporting unit, a second processing unit 312 on the second substrate supporting unit, a second exhaust unit 314 connected to the second reaction space between the second substrate supporting unit and the second processing unit 312, and a second exhaust port 313 connected to at least a portion of the second exhaust unit 314. As described above, the gas in the second reaction space and the gas in the lower space below the second substrate supporting unit may meet each other outside the second reaction space. In addition, the gas in the second reaction space and the gas in the lower space below the second substrate supporting unit may be transmitted to the second exhaust unit 314 through different channels. The different channels may be separated by the at least one second ring. The different channels may also extend along different surfaces of the at least one second ring.

[0082] The third reactor may include a third substrate supporting unit (not shown) housed in a partition of the chamber 311, at least one third ring surrounding the third substrate supporting unit, a third processing unit 312 on the third substrate supporting unit, a third exhaust unit 314 connected to the third reaction space between the third substrate supporting unit and the third processing unit 312, and a third exhaust port 313 connected to at least a portion of the third exhaust unit 314. As described above, the gas in the third reaction space and the gas in the lower space below the third substrate supporting unit may meet each other outside the third reaction space. In addition, the gas in the third reaction space and the gas in the lower space below the third substrate supporting unit may be transmitted to the third exhaust unit 314 through different channels. The different channels may be separated by the at least one third ring. The different channels may also extend along different surfaces of the at least one third ring.

[0083] The fourth reactor may include a fourth substrate supporting unit (not shown) housed in a partition of the chamber 311, at least one fourth ring surrounding the fourth substrate supporting unit, a fourth processing unit 312 on the fourth substrate supporting unit, a fourth exhaust unit 314 connected to a fourth reaction space between the fourth substrate supporting unit and the fourth processing unit 312, and a fourth exhaust port 313 connected to at least a portion of the fourth exhaust unit 314. As described above, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate supporting unit may meet each other outside the fourth reaction space. In addition, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate supporting unit may be transmitted to the fourth exhaust unit 314 through different channels. The different channels may be separated by at least one fourth ring. The different channels may also extend along different surfaces of the at least one fourth ring.

[0084] Figure 7 and 8 1 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept. The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0085] Reference Figure 7 and 8 The at least one ring R may include at least one of a flow control ring FCR and an outer ring OR. The outer ring OR may be provided to surround the flow control ring FCR. Therefore, the flow control ring FCR may be between the substrate support unit 150 and the outer ring OR.

[0086] The first channel C1 through which the first gas of the reaction space 51 flows may be between the exhaust unit 120 and the flow control ring FCR. The second channel C2 through which the second gas of the lower space 57 flows may be between the outer ring OR and the flow control ring FCR. In this way, the first channel C1 and the second channel C2 are separated by the flow control ring FCR. Since the separated first channel C1 and the second channel C2 can be connected to each other at the junction point I outside the reaction space 51 and connected to the exhaust space 55, a stable processing schedule can be achieved.

[0087] The flow control ring FCR may be implemented in an "L" shape, and to this end, the flow control ring FCR may include a first portion FCR-1 and a second portion FCR-2. The first portion FCR-1 may be defined as a portion overlapping at least a portion of the substrate support unit 150. In an alternative embodiment, the first portion FCR-1 of the flow control ring FCR may be configured to slide on the substrate support unit 150.

[0088] In some embodiments, the substrate support unit 150 may be configured to be vertically movable. When the substrate support unit 150 is elevated, the flow control ring FCR may move up and down along with the vertical movement of the substrate support unit 150 by virtue of the first portion FCR-1 of the flow control ring FCR being arranged to overlap with the substrate support unit 150.

[0089] The second portion FCR-2 may be defined as a portion extending from the first portion FCR-1 in the vertical direction along the side of the substrate support unit 150. In addition, the second portion FCR-2 of the flow control ring FCR may extend in the horizontal direction (circumferential direction) along the side of the support member TLD. In some embodiments, the second portion FCR-2 may extend to overlap at least a portion of the exhaust unit 120. Although not shown in the drawings, in another embodiment, the flow control ring FCR may further include a third portion (see FIG. Figure 18 , which extends from the second portion FCR-2 to overlap with at least a portion of the exhaust unit 120.

[0090] The outer ring OR may be on the support TLD. More specifically, the outer ring OR may be between the exhaust unit 120 and the support TLD. The outer ring OR may be configured to slide on the support TLD. The flow control ring FCR may be separated from the outer ring OR to form a second channel C2. By adjusting the spacing of the second channel C2, the pressure balance between the reaction space 51 and the inner space of the outer chamber (i.e., the lower space 57) can be controlled.

[0091] The outer ring OR may include a curved structure at a corner portion adjacent to the junction I between the first channel C1 and the second channel C2. Such a curved structure can accelerate the flow of gas around the curved structure. In an alternative embodiment, the exhaust unit 120 may also include a curved structure at a corner portion adjacent to the junction I. In this case, the junction I will be between the curved structure of the outer ring OR and the curved structure of the exhaust unit 120.

[0092] By introducing the curved structure of the outer ring OR, the second gas moving through the second channel C2 can be accelerated along the curved structure in a laminar flow to the exhaust unit 120. Therefore, it is possible to reduce the collision at the junction I of the first gas moving through the first channel C1 and the second gas moving through the second channel C2. As a result, the exhaust of the gas around the junction I can be facilitated by the curved structure.

[0093] Figures 9 to 11 1 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept. The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0094] refer to Figure 9 and 10 The flow control ring FCR may include a first portion FCR-1′ and a second portion FCR-2. The first portion FCR-1′ of the flow control ring FCR may be defined as a portion overlapping at least a portion of the support member TLD. Furthermore, the first portion FCR-1′ may extend to overlap at least a portion of the substrate support unit 150. Thus, the flow control ring FCR may be implemented in a "T" shape.

[0095] Although Figure 9 and 10 It is shown that the first portion FCR-1' is configured to overlap with the support member TLD and the substrate supporting unit 150, but the first portion FCR-1' may be configured to overlap only with the support member TLD (see Figure 21 ). In this case, the flow control ring FCR will be realized in an "L" shape.

[0096] The second portion FCR-2 of the flow control ring FCR may extend vertically from the first portion FCR-1′ along the side of the substrate support unit 150. Furthermore, the second portion FCR-2 of the flow control ring FCR may extend horizontally (circumferentially) along the side of the support member TLD. That is, the second portion FCR-2 of the flow control ring FCR may extend between the substrate support unit 150 and the support member TLD.

[0097] By the configuration of the flow control ring FCR, the first channel C1 and the second channel C2 can be separated from each other in the reaction space 51. That is, the first channel C1 formed between the exhaust unit 120 and the flow control ring FCR and the outer ring OR formed between the flow control ring FCR and the support TLD (or the support TLD) are separated from each other. Figure 12 The second channels C2 between the two channels C1 and C2 may extend in the reaction space 51 without meeting each other.

[0098] In some embodiments, as Figure 9 and 10 As shown, the first channel C1 and the second channel C2 may be separated by a flow control ring FCR and extended to the exhaust unit 120. In this case, the junction of the first gas passing through the first channel C1 and the second gas passing through the second channel C2 will become the exhaust space 55 outside the reaction space 51.

[0099] The substrate support unit 150 may be configured to be vertically movable. For example, the substrate support unit 150 may be moved downward to load / unload a substrate in the lower space 57. Furthermore, the substrate support unit 150 may be moved upward to process a substrate in the reaction space 51. As the substrate support unit 150 moves upward and downward, the flow control ring FCR may contact the surface of the substrate support unit 150.

[0100] For example, when the substrate supporting unit 150 moves up and down, the lower surface of the first portion FCR-1' configured to overlap the substrate supporting unit 150 of the flow control ring FCR and the upper surface of the step of the substrate supporting unit 150 may contact each other. As a result, the reaction space 51 and the lower space 57 may communicate with the exhaust space 55 through the first channel C1 and the second channel C2 separated by the flow control ring FCR, respectively.

[0101] In some embodiments, the first portion FCR-1' of the flow control ring FCR may include an uneven structure Y. More specifically, the uneven structure Y may be formed in the first portion FCR-1' of the flow control ring FCR so as to overlap at least a portion of the upper surface of the step of the support member TLD. The uneven structure Y may form a second channel C2 between the first portion FCR-1' of the flow control ring FCR and the support member TLD.

[0102] In an alternative embodiment, the first portion FCR-1' of the flow control ring FCR may not include an uneven structure. In this case, as the substrate support unit 150 moves up and down, the flow control ring FCR may also move up and down. As the flow control ring FCR moves up and down, a second channel C2 may be generated between the first portion FCR-1' and the upper surface of the step of the support member TLD. In either case, the first gas in the reaction space can be transferred to the exhaust unit via the first surface of the flow control ring FCR, while the second gas in the lower space can be transferred to the exhaust unit via the second surface of the flow control ring FCR.

[0103] In some embodiments, the flow control ring FCR may move up and down along with the vertical movement of the substrate support unit 150. Furthermore, the flow control ring FCR may slide relative to the support member TLD along with the vertical movement of the substrate support unit 150. In this case, the exhaust efficiency of the first channel C1 and / or the exhaust efficiency of the second channel C2 may vary depending on the degree of vertical movement of the substrate support unit 150.

[0104] Figure 11 Shown in Figure 9 and 10 The exemplary configuration of the flow control ring FCR used in the embodiment of FIG. The flow control ring FCR having the first portion FCR-1′ and the second portion FCR-2 may have a shape corresponding to the shape of the substrate to be processed. For example, when the substrate to be processed is a circular wafer, the flow control ring may be implemented as a circle with a larger diameter. Figure 11As shown, the flow control ring FCR may be implemented to have a "T"-shaped cross section. In addition, the first portion FCR-1" of the flow control ring FCR may have an uneven structure Y, and the second gas in the lower space may be transmitted to the exhaust unit through the uneven structure Y.

[0105] Figures 12 to 14 1 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept. The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0106] Reference Figure 12 and 13 The substrate processing apparatus may further include an outer ring OR disposed around the flow control ring FCR. In this case, a first portion FCR-1' of the flow control ring FCR may overlap at least a portion of the outer ring OR. Furthermore, a first channel C1 may be between the exhaust unit 120 and the flow control ring FCR, and a second channel C2 may be between the outer ring OR and the flow control ring FCR. The outer ring OR may be on the support member TLD.

[0107] The flow control ring FCR may be configured to slide on the outer ring OR. For example, the lower surface of the flow control ring FCR or the upper surface of the outer ring OR may be surface-treated to have a relatively low roughness (eg, a roughness of 0.4 or less).

[0108] The second portion FCR-2 of the flow control ring FCR, ie, a portion extending in a vertical direction from the first portion FCR-1′ along the side of the substrate supporting unit 150, may have a surface inclined with respect to the substrate supporting unit 150 (see FIG. 1 ). Figure 12 and 13 ). For example, the side surface of the substrate supporting unit 150 may extend in the vertical direction, and the side surface of the second portion FCR-2 of the flow control ring FCR may extend in a direction inclined with respect to the vertical direction. In another example, the side surface of the second portion FCR-2 of the flow control ring FCR may extend in the vertical direction, and the side surface of the substrate supporting unit 150 may extend in a direction inclined with respect to the vertical direction.

[0109] In this manner, by configuring the flow control ring FCR to be slidable on the outer ring OR, and by configuring the side surface of the second portion FCR-2 of the flow control ring FCR and the side surface of the substrate support unit 150 to be inclined relative to each other, the flow control ring FCR can move in the second direction as the substrate support unit 150 moves in the first direction. More specifically, when the substrate support unit 150 moves in the first direction, the substrate support unit 150 can contact the flow control ring FCR. The flow control ring FCR can move in the second direction (e.g., can slide in the horizontal direction) due to the force generated when the substrate support unit 150 continues to move in the first direction while in contact with the flow control ring FCR.

[0110] This force can be defined as the force of the substrate supporting unit pushing the flow control ring FCR. Since the flow control ring FCR is slidable on the outer ring OR, when the substrate supporting unit 150 moves up and down, the pushing force causes the flow control ring FCR to slide relative to the outer ring OR.

[0111] Figure 14 Shown in Figure 12 and 13 An exemplary configuration of a flow control ring FCR used in an embodiment of the present invention is shown. As described above, the flow control ring FCR may include a first portion FCR-1' extending to overlap the substrate support unit 150 and the outer ring OR, and a second portion FCR-2 extending vertically from the first portion. Furthermore, the second portion FCR-2 may be configured to have an inclined surface. For example, the inclined surface may be formed such that the inner diameter of one end closer to the first portion FCR-1' is smaller than the inner diameter of the other end farther from the first portion FCR-1'.

[0112] Figure 15 is a view of a substrate treating apparatus according to an embodiment of the inventive concept. Figure 16 yes Figure 15 The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0113] Reference Figure 15 , a substrate (not shown) is mounted on a heating block 79. A heating block driver 710 in the lower space can vertically move the heating block 79. The vertical movement of the heating block 79 can be used to load and unload the substrate.

[0114] The gas supplied to the reactor is introduced into the reaction space 711 on the heating block 79 (not shown) where the substrate is located through the gas inlet 713 and the showerhead 72. The process gas 716 is then exhausted after the substrate processing (e.g., deposition) is completed using the gas (or during the substrate processing). The process gas 716 is transferred to the exhaust pipe 74 through the space between the flow control ring 75 and the exhaust pipe 74. The process gas 716 transferred to the exhaust pipe 74 can be exhausted to an exhaust pump (not shown) through the exhaust port 73 and the reactor wall 71.

[0115] When the gas 715 is introduced into the reaction space 711 through the gas inlet 713, the filling gas 717 is introduced into the lower space 712 of the reactor through the filling gas inlet 714. Figure 15 As shown in region A of FIG, while the process gas 716 is exhausted into the exhaust space 76 in the exhaust duct 74, the filling gas 717 is supplied to the separation space between the heating block 79 and the flow control ring 75. By supplying the filling gas 717 to the separation space, the process gas 716 is prevented from being introduced into the reactor lower space 712. To achieve this prevention, an adjustment operation may be performed to balance the process pressure in the reaction space 711 and the pressure in the reactor lower space 712 to which the filling gas 717 is supplied.

[0116] Filling gas 717 introduced into the separation space between heating block 79 and flow control ring 75 can reduce exhaust efficiency. Specifically, after the reaction, filling gas 717 introduced into the separation space collides with process gas 716, potentially reducing exhaust efficiency. Furthermore, this gas collision occurs at the substrate edge. Consequently, this gas collision can affect the uniformity of the thin film being processed.

[0117] In more detail, Figure 16 FIG. 7 illustrates a case where a heating block 79 is raised to form a reaction space 711 for substrate processing. A collision may occur between process gas 716 and fill gas 717 traveling through the space between the heating block 79 and the flow control ring 75. This gas collision hinders the proper exhaust flow of the gases into the exhaust duct 74. Due to this poor exhaust flow in the substrate edge region, the uniformity of the thin film at the substrate edge is reduced. Therefore, the present invention seeks to disclose a configuration and apparatus for minimizing the impact of the fill gas on processing in the reaction space.

[0118] Figure 17 1 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept. The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0119] Reference Figure 17To prevent the fill gas 717 from the lower space and the process gas 716 from the reaction space 711 from directly colliding near the edge of the substrate (i.e., the edge of the heating block 79), the flow control ring 75 is placed at the edge of the heating control block 79. A first exhaust channel through which the process gas 716 passes is formed between the flow control ring 75 and the exhaust pipe 74, while a second exhaust channel through which the fill gas 717 passes is formed between the flow control ring 75 and the outer ring 718.

[0120] Therefore, if Figure 17 As shown in FIG. 7( b ), direct collision of the process gas 716 and the filler gas 717 around the substrate can be prevented. Furthermore, because the corner portion of the outer ring 718 has a curved structure, the filler gas 717 can be accelerated along the curved structure of the outer ring 718 constituting the second exhaust passage through the Coanda effect. The accelerated filler gas 717 can be efficiently exhausted into the exhaust space 76 of the exhaust duct 74 while forming a laminar flow.

[0121] At the same time, the flow control ring 75 can move up and down together with the heating block 79. In this case, the height of the first exhaust channel formed between the flow control ring 75 and the exhaust duct 74 can be adjusted according to the rising height of the heating block 79 and the flow control ring 75. Therefore, the exhaust efficiency of the process gas 716 exhausted into the exhaust space 76 through the first exhaust channel can be controlled.

[0122] As the heat block 79 is lowered, the flow control ring 75 located on the heat block 79 can be lowered. When the heat block 79 is lowered further for loading / unloading of substrates to be processed, the flow control ring 75 can be separated from the heat block 79, and the separated flow control ring 75 can be located on the support member 750. The support member 750 can be fixed below the chamber CH. In an alternative embodiment, the support member 750 can be configured to be detachable below the chamber CH.

[0123] When the heating block 79 is raised, the flow control ring 75 located on the support member 750 can be located again on the heating block 79. Therefore, when the heating block 79 moves up and down, the flow control ring 75 on the support member 750 is separated from the support member 750, and the flow control ring 75 can move up and down together with the heating block 79.

[0124] Figure 18 is a view of a substrate treating apparatus according to an embodiment of the inventive concept. Figure 19 yes Figure 18 The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0125] refer to Figure 18, the exhaust paths of the process gas 716 and the filling gas 717 are separated from each other. That is, the first exhaust channel through which the process gas 716 is exhausted and the second exhaust channel through which the exhaust gas is exhausted can be separated by the outer ring 718. Figure 18 As shown in FIG. 2B , the process gas 716 is exhausted into the exhaust duct 74 through a first exhaust channel formed between the exhaust duct 74 and the outer ring 718 without colliding with the filling gas 717. The filling gas 717 is exhausted into the exhaust duct 74 through a second exhaust channel between the chamber wall (i.e., the support member) and the outer ring 718 without colliding with the process gas 716.

[0126] The flow control ring 75 may include a first portion FCR-1″ disposed to overlap at least a portion of the substrate supporting unit including the heating block 79, a second portion FCR-2 extending from the first portion FCR-1″ in a vertical direction along a side of the substrate supporting unit, and a third portion FCR-3 extending from the second portion FCR-2 in a horizontal direction to overlap at least a portion of the outer ring 718.

[0127] The flow control ring 75 is disposed at the edge of the heating block 79 and moves up and down together with the heating block 79. When the heating block 79 is raised to the substrate processing position, the flow control ring 75 and the outer ring 718 perform a face seal 719 to physically prevent collision between the reaction gas and the filling gas.

[0128] In more detail, as the heating block 79 rises, the lower surface of the first portion FCR-1" can contact the heating block 79, and the upper surface of the third portion FCR-3 can be connected to the lower surface of the outer ring 718. Therefore, as the heating block 79 continues to rise, the flow control ring FCR can also rise through the first portion FCR-1", and the outer ring 718 can also rise through the third portion FCR-3. When the outer ring 718 rises through the accompanying rising action, a second exhaust channel can be formed by the separation between the chamber wall CH (i.e., the support member) and the outer ring 718.

[0129] When the heating block 79 descends, the lower surface of the outer ring 718 may contact the chamber wall CH (i.e., the support member), and the outer ring 718 may be located on the chamber wall CH. Then, as the heating block 79 continues to descend, the flow control ring 75 located on the heating block 79 may separate from the heating block 79, and the lower surface of the third portion FCR-3 may contact the upper surface of the support member 750. As a result, the flow control ring 75 separated from the heating block 79 will be located on the support member 750.

[0130] and Figure 17 The embodiments are different, according to Figure 18In the embodiment, the heights of the first and second exhaust channels can be determined based on the degree to which the flow control ring 75 elevates the outer ring 718, that is, the height of the heater block 79. Therefore, the exhaust efficiency of the fill gas 717 or the process gas 716 can be controlled, and the elevation position of the heater block 79 can be determined to achieve optimal exhaust efficiency.

[0131] At the same time, Figure 18 In (b), the side of outer ring 718 can be separated from the side of flow control ring 75. More specifically, the second portion FCR-2 of flow control ring 75 and outer ring 718 can be separated from each other to form a space. Due to this space, a blind spot 720 exists between outer ring 718 and flow control ring 75. Since no fill gas is supplied to the blind spot, some process gas exhausted from the reaction space remains. Figure 19 yes Figure 18 (b) is an enlarged view of the area around the blind spot 720.

[0132] like Figure 19 As shown, in some embodiments, at least one of the exhaust duct 74 and the outer ring 718 may include a curved structure. The curved structure may be configured to facilitate exhausting the process gas (e.g., reactant gas) located in the aforementioned space into the first exhaust channel. For example, the curved structure may have a certain radius of curvature.

[0133] refer to Figure 19 The reaction gas discharged from the reaction space to the exhaust pipe 74 is discharged in about three forms. The flow in the form of "G1" is discharged directly from the reaction space into the exhaust space 76 ( Figure 18 ). Flow in the form of "G2" flows along the outer wall of exhaust duct 74 and is accelerated near the curved surface L of exhaust duct 74 and introduced into the exhaust channel. Flow in the form of "G3" flows into blind spot 720 and then flows back into the exhaust channel due to the suction force in the exhaust space. Here, flow in the form of "G3" is accelerated near the curved surface L' of outer ring 718 to be introduced into the exhaust channel. In other words, due to the curved structure of outer ring 718, residual gas and its turbulent flow can be prevented from entering the blind spot, and the process gas can be discharged and removed more quickly and smoothly.

[0134] Figure 20 1 is a view of a substrate processing apparatus according to an embodiment of the present inventive concept. The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0135] Reference Figure 20, the exhaust duct 74 may include a first curved structure D1, and the outer ring 718 may include a second curved structure D2. In this case, the junction I between the first channel through which the process gas 716 is exhausted and the second channel through which the fill gas 717 is exhausted may be between the first curved structure D1 of the exhaust duct 74 and the second curved structure D2 of the outer ring 718. Thus, the corners of the outer ring 718 and the exhaust duct 74 exposed to the exhaust channel are curved. Therefore, the exhaust of the fill gas 717 and the process gas 716 (e.g., reactant gas) may be accelerated along the curved surface of the outer ring 718 or the exhaust duct 74 by inducing a Coanda effect.

[0136] exist Figures 18 to 20 In the embodiment, to allow the filling gas 717 and the process gas 716 to be discharged smoothly and quickly, the corners of the exhaust duct and the outer ring where the gases meet are curved to induce a Coanda effect. To achieve this, the curvature of the curved surface can preferably be R1 or greater (i.e., a curvature radius of 1 mm or greater).

[0137] Figures 18 to 20 The technical features of the embodiment are as follows.

[0138] 1. Bypassing the gap connecting the upper and lower spaces of the reactor. That is, it is possible to prevent gas movement from the upper part to the lower part and from the lower part to the upper part, and to suppress the lower part discharge by immediately discharging the lower gas.

[0139] 2. The distance between the existing flow control ring and the heating block (ie, the channel through which the filling gas in the lower space is exhausted) can be separated from the substrate to suppress process variations caused by the lower gas.

[0140] 3. A plasma confinement effect can be obtained by arranging the flow control ring on the side of the heating block, and uniform and stable plasma processing can be performed by concentrating the plasma in the reaction space on the substrate.

[0141] 4. The flow control ring arranged on the side of the heating block can move according to the vertical movement of the heating block. Therefore, the width and volume of the exhaust channel formed between the exhaust duct and the outer ring and between the outer ring and the chamber wall can be controlled.

[0142] In the above Figures 18 to 20 In an embodiment, the exhaust gas flow is controlled by arranging the flow control ring on the side of the heating block (ie, arranging the flow control ring to overlap a portion of the heating block in the vertical direction). Figure 21 A structure in which a flow control ring is provided on an outer ring so as to overlap a portion of the outer ring is shown. In this embodiment, the exhaust gas flow is controlled by a structure that prevents collision between the reaction gas and the filling gas around the heating block.

[0143] refer to Figure 21 The separation distance between the side of the heating block 79 and the flow control ring 75 is very narrow. For example, the separation distance can be configured to be within 0.2 mm. As a result, it is difficult for the fill gas 717 to enter the reaction space or for the process gas 716 to enter the lower space. On the other hand, the flow control ring 75 and the outer ring 718 are sufficiently separated from each other to allow gas to pass through, thereby forming an exhaust channel for the fill gas 717.

[0144] Therefore, if Figure 21 As shown, the processing gas 716 and the filling gas 717 do not collide with each other around the heating block and can be exhausted into the exhaust space 76 through the corresponding exhaust channels. Figure 21 In the embodiment of the present invention, by greatly narrowing the separation distance between the side of the heating block 79 and the flow control ring 75, the collision between the processing gas 716 and the filling gas 717 is minimized. However, another advantage of this structure is that it can promote the self-alignment of the flow control ring 75 in the reaction space. For example, when the flow control ring 75 is asymmetrically arranged on the upper surface of the outer ring 718, that is, when the symmetric center of the inner diameter of the flow control ring 75 is not consistent with the center of the heating block 79, as the heating block 79 rises, the heating block 79 contacts a portion of the inner surface of the flow control ring 75, thereby applying a force in the horizontal direction relative to the flow control ring 75. Therefore, the symmetric center of the inner diameter of the flow control ring 75 and the center of the heating block 79 can coincide.

[0145] Figure 22 This process is shown. Figure 22 The process of self-alignment of the flow control ring 75 by the heating block 79 is shown.

[0146] -First Operation( Figure 22 (a)): The heating block 79 rises.

[0147] - Second Operation ( Figure 22 (b)): The side of the heating block 79 is in contact with the inner side of the flow control ring 75.

[0148] -Third Operation ( Figure 22 (c)): While the heating block 79 continues to rise in contact with the flow control ring 75, the flow control ring 75 begins to move. For example, the flow control ring 75 moves laterally relative to the outer ring 718 (i.e., slides) on the upper surface of the step of the outer ring 718 in surface contact.

[0149] -Fourth Operation ( Figure 22 (d)): As the heating block 79 continues to rise in contact with the flow control ring 75, self-alignment of the flow control ring 75 proceeds.

[0150] -Fifth Operation ( Figure 22(e)): The heating block 79 is raised to the substrate processing position and the self-alignment of the flow control ring 75 is completed.

[0151] according to Figure 22 The control method of the substrate processing apparatus of the embodiment (particularly the self-alignment of the flow control ring) is particularly important in high-temperature processes (e.g., processes at temperatures exceeding 500°C). At high temperatures, due to thermal deformation of the heat block 79 and the flow control ring 75, the width of the gap between the heat block 79 and the flow control ring 75 depends on the position on the side surfaces of the heat block 79 and the flow control ring 75. Therefore, when the flow control ring 75 is fixed to the outer ring 718, filler gas or reactive gas may be introduced into the gap at a specific position, which may affect the uniformity of the thin film around the substrate.

[0152] according to Figure 22 In this embodiment, the flow control ring 75 is self-aligned by contact between the heat block 79 and the flow control ring 75, thereby preventing deformation caused by high temperatures and the resulting non-uniformity in processing. To maintain this structure, the sidewalls of the flow control ring 75 and the sidewalls of the outer ring 718 are separated at regular intervals to promote alignment of the flow control ring 75 on the upper surface of the outer ring 718.

[0153] Figure 23 yes Figure 22 Figure 7 is a diagram of a flow control ring 75 used in a flow control ring.

[0154] refer to Figure 22 and 23 The lower surface of the flow control ring 75, i.e., the portion of the flow control ring 75 that contacts the upper surface of the outer ring 718, has an uneven structure Y, which supports the flow control ring 75 on the outer ring 718 while providing an exhaust passage for a filler gas, such as nitrogen (N2). Furthermore, the surface roughness of the inner surface of the flow control ring can be 0.4 or less, so that the inner surface of the flow control ring 75 contacts the heating block 79, slides due to the weight of the flow control ring, and self-alignment is achieved by sliding.

[0155] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention as defined by the following claims.

Claims

1. A substrate processing device comprising: substrate supporting unit; at least one ring surrounding the substrate support unit; a processing unit on the substrate supporting unit; as well as a discharge unit connected to the reaction space between the substrate supporting unit and the processing unit, The first gas in the reaction space is transmitted to the exhaust unit through the first channel. The second gas in the lower space below the substrate supporting unit is transmitted to the exhaust unit through the second passage, and the first channel and the second channel being separated by the at least one ring, The at least one ring includes a flow control ring that moves laterally relative to the substrate support unit to adjust a width or spacing of the second channel.

2. The substrate processing apparatus according to claim 1, in, The at least one ring further includes: an outer ring surrounding the substrate supporting unit; and Wherein, the flow control ring is between the substrate supporting unit and the outer ring.

3. The substrate processing apparatus according to claim 2, in, The first channel and the second channel are separated by the outer ring.

4. The substrate processing apparatus according to claim 3, in, The flow control ring comprises: a first portion overlapping at least a portion of the substrate supporting unit; a second portion extending from the first portion along a side of the substrate supporting unit; and A third portion overlaps at least a portion of the outer ring from the second portion.

5. The substrate processing apparatus according to claim 4, in, At least one of the discharge unit and the outer ring includes a curved structure, The second portion of the flow control ring and the outer ring are separated from each other to form a space, and The curved structure is configured to facilitate exhaustion of the reaction gas in the space to the first channel.

6. The substrate processing apparatus according to claim 3, further comprising: a support member configured to support the processing unit and the discharge unit, The first passage is formed between the discharge unit and the outer ring, and The second channel is formed between the outer ring and the support.

7. The substrate processing apparatus according to claim 3, in, The substrate supporting unit is configured to be vertically movable, and The flow control ring contacts the substrate supporting unit and the outer ring surface as the substrate supporting unit moves upward, and moves up and down according to the vertical movement of the substrate supporting unit.

8. The substrate processing apparatus according to claim 7, in, The exhaust efficiency of the first channel and the exhaust efficiency of the second channel vary with the extent of vertical movement of the substrate supporting unit.

9. The substrate processing apparatus according to claim 2, in, The first and second passages are separated by the flow control ring.

10. The substrate processing apparatus according to claim 9, in, The flow control ring comprises: a first portion that overlaps at least a portion of the outer ring; and The second portion extends from the first portion along a side surface of the substrate supporting unit.

11. The substrate processing apparatus according to claim 10, further comprising: a support member configured to support the processing unit and the discharge unit, wherein the first channel is between the discharge unit and the flow control ring, and The second passage is formed between the flow control ring and the outer ring.

12. The substrate processing apparatus according to claim 10, in, The substrate supporting unit is configured to be vertically movable, and When the substrate supporting unit moves upward, the flow control ring is self-aligned while sliding relative to the outer ring by a thrust of the substrate supporting unit.

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