Substrate processing equipment

Abstract

A substrate processing apparatus capable of preventing the deflection of an exhaust flow that may occur when introducing an asymmetric exhaust structure, comprising: an exhaust unit that provides an exhaust space surrounding a reaction space; an exhaust port connected to the exhaust unit; and a flow control unit disposed in the exhaust space, wherein the exhaust port is disposed asymmetrically with respect to the reaction space, and the flow control unit may include: an upper flow control plate including a plurality of first through holes; a lower flow control plate disposed below the upper flow control plate and including a plurality of second through holes.

Description

[0001] Cross - reference to related applications

[0002] This application claims the benefit of U.S. Application No. US62 / 940,812, filed on November 26, 2019, with the United States Patent and Trademark Office, under 35 U.S.C.§119, the entire content of which is incorporated herein by reference. Technical field

[0003] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an improved exhaust structure. Background art

[0004] In recent semiconductor substrate processing apparatuses, substrate processing apparatuses equipped with a plurality of individual reactors are widely used to increase the productivity per hour. Different from conventional batch furnaces, the advantage of such an apparatus is the ability to increase productivity while precisely controlling individual substrates. Korean Patent No. 0782529 discloses such a substrate processing apparatus.

[0005] In a substrate processing apparatus equipped with a plurality of individual reactors, the gas supply and exhaust systems of each reactor are important for achieving process reproducibility and the continuity of subsequent processes. For example, when the thickness and uniformity of a thin film deposited on a substrate are not constant depending on the position on the substrate, and when the deviation is severe, it may lead to a decrease in reproducibility between reactors and an increase in the defect rate of subsequent processes.

[0006] Meanwhile, in the case where a substrate processing apparatus has a plurality of individual reactors, each reactor is equipped with a gas supply device such as a shower head. Therefore, the gas supplied to the reactor can be evenly distributed. However, generally, since such a substrate processing apparatus employs an asymmetric exhaust system, it causes deflection of the exhaust flow, which results in deflection of the final thickness and the uniformity of the thin film on the substrate without uniform distribution. Summary of the invention

[0007] One or more embodiments include a substrate processing apparatus that can prevent deflection of the exhaust flow that may occur when introducing an asymmetric exhaust structure.

[0008] Additional aspects will be set forth in part in the description that follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0009] According to one or more embodiments, a substrate processing apparatus includes: an exhaust unit that provides an exhaust space surrounding a reaction space; and an exhaust port connected to the exhaust unit; a flow control unit disposed in the exhaust space, wherein the exhaust port is disposed asymmetrically with respect to the reaction space, and the flow control unit may include: an upper flow control plate including a plurality of first through-holes; a lower flow control plate disposed below the upper flow control plate and including a plurality of second through-holes.

[0010] According to an example of the substrate processing apparatus, the plurality of first through-holes may be arranged along a first circumference having a first diameter, and the plurality of second through-holes may be arranged along a second circumference having a second diameter greater than the first diameter.

[0011] According to another example of the substrate processing apparatus, an exhaust flow from the exhaust space toward the reaction space may be generated between the upper flow control plate and the lower flow control plate.

[0012] According to another example of the substrate processing apparatus, the exhaust flow may include: a first exhaust flow that moves away from the exhaust port in a first region of the exhaust space adjacent to the exhaust port; a second exhaust flow that is guided toward the exhaust port in a second region of the exhaust space spaced apart from the exhaust port.

[0013] According to another example of the substrate processing apparatus, the diameter of the plurality of first through-holes may be greater than the diameter of the plurality of second through-holes.

[0014] According to another example of the substrate processing apparatus, the density of the plurality of first through-holes may be less than the density of the plurality of second through-holes.

[0015] According to another example of the substrate processing apparatus, the plurality of first through-holes may be arranged to alternate with the plurality of second through-holes.

[0016] According to another example of the substrate processing apparatus, the upper flow control plate may include a first region adjacent to the exhaust port and a second region separated from the exhaust port, the through-holes in the first region of the plurality of first through-holes may be arranged along a third circumference having a third diameter, and the through-holes in the second region of the plurality of first through-holes may be arranged along a fourth circumference having a fourth diameter greater than the third diameter.

[0017] According to another example of the substrate processing apparatus, the exhaust unit may further include: a partition wall that defines a side portion of the reaction space; an outer wall parallel to the partition wall; a connecting wall that extends to connect the partition wall to the outer wall.

[0018] According to another example of the substrate processing apparatus, at least one of the upper flow control plate and the lower flow control plate may be arranged to contact the partition wall and the outer wall.

[0019] According to another example of a substrate processing apparatus, the substrate processing apparatus may further include a support configured to support the discharge unit, and the reaction space and the discharge space may communicate with each other through a gap between the partition wall and the support.

[0020] According to another example of a substrate processing apparatus, the lower flow control plate may include: a first portion extending between the partition wall and the outer wall; and a second portion extending from the first portion and contacting the support portion, wherein the plurality of second through holes may be arranged to pass through the first portion.

[0021] According to another example of a substrate processing apparatus, the outer wall may include an opening connecting the discharge unit and the discharge port, and the opening may be above the gap.

[0022] According to another example of a substrate processing apparatus, the upper flow control plate and the lower flow control plate may be provided between the opening and the gap.

[0023] According to another example of a substrate processing apparatus, the gas in the reaction space is discharged to the discharge port along a path in the discharge space, and the path may include: a first path extending from the gap toward the outer wall; a second path extending from the first path to pass through the lower flow control plate; a third path extending from the second path toward the partition wall; and a fourth path extending from the third path to pass through the upper flow control plate.

[0024] According to another example of a substrate processing apparatus, the flow control unit is configured to generate a discharge having a first discharge efficiency in the discharge space adjacent to the discharge port, and generate a discharge having a second discharge efficiency higher than the first discharge efficiency in the discharge space spaced apart from the discharge port.

[0025] According to one or more embodiments, a substrate processing apparatus includes: a discharge unit providing a discharge space surrounding a reaction space; a discharge port connected to the discharge unit; and a flow control unit disposed in the discharge space, wherein the discharge port is asymmetrically disposed with respect to the reaction space, and the flow control unit may be configured to generate a discharge having a first discharge efficiency in the discharge space adjacent to the discharge port, and generate a discharge having a second discharge efficiency higher than the first discharge efficiency in the discharge space spaced apart from the discharge port.

[0026] According to an example of a substrate processing apparatus, the flow control unit may include a flow control plate including a plurality of through holes arranged to surround the reaction space.

[0027] According to one or more embodiments, a substrate processing apparatus includes: an exhaust unit that provides an exhaust space surrounding a reaction space; an exhaust port connected to the exhaust unit; and a flow control unit disposed in the exhaust space, wherein the exhaust port is asymmetrically disposed with respect to the reaction space, and the flow control unit may be configured to generate a first exhaust flow and a second exhaust flow, the first exhaust flow flowing away from the exhaust port in a first region of the exhaust space adjacent to the exhaust port, and the second exhaust flow being guided toward the exhaust port in a second region of the exhaust space spaced apart from the exhaust port.

[0028] According to an example of the substrate processing apparatus, the exhaust in the exhaust space adjacent to the exhaust port may have a first exhaust efficiency through the first exhaust flow flowing away from the exhaust port, and the exhaust in the exhaust space away from the exhaust port may have a second exhaust efficiency higher than the first exhaust efficiency through the second exhaust flow being guided toward the exhaust port. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects, features, and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0030] Figure 1 and Figure 2 Schematically illustrates a substrate processing apparatus according to an embodiment of the inventive concept, wherein, Figure 1 shows a part of the substrate processing apparatus, Figure 2 shows another part of the substrate processing apparatus.

[0031] Figures 3 to 5 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0032] Figures 6 to 8 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0033] Figure 9 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0034] Figure 10 and Figure 11 is a diagram of a comparative example of an exhaust flow in an existing substrate processing apparatus and an exhaust flow in the substrate processing apparatus of the present invention.

[0035] Figure 12 is a view of an embodiment of an upper flow control plate and a lower flow control plate.

[0036] Figures 13(a) - 13(c) is a diagram of various embodiments of an arrangement of exhaust holes on an upper flow control plate and a lower flow control plate in a direction facing an exhaust port in a reaction space.

[0037] Figure 14 views of a substrate processing apparatus according to some embodiments of the inventive concept; and

[0038] Figure 15 is a view of a flow control plate configured to have a "T" - shaped cross - section. DETAILED DESCRIPTION

[0039] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals always refer to like elements. In this regard, the present embodiments may have different forms and should not be construed as limited to the descriptions set forth herein. Accordingly, the embodiments are described below only by referring to the accompanying drawings to explain aspects of the present specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one", when preceding a list of elements, modify the entire list of elements and not individual elements of the list.

[0040] The terms used herein are for the purpose of describing particular example embodiments only and are not intended to limit the present disclosure. As used herein, the singular forms "a", "an" and "the" may also be intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms "comprises", "has" and / or "contains" are used in this specification, the presence of the stated features, integers, steps, processes, components, parts and / or combinations thereof is specified, but the presence or addition of one or more other features, integers, steps, processes, components, parts and / or combinations thereof is not excluded. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0041] It should be understood that although the terms first, second, etc. may be used herein to describe various components, parts, regions, layers and / or sections, these components, parts, regions, layers and / or sections should not be limited by these terms. These terms do not denote any order, quantity or importance, but are only used to distinguish one component, region, layer and / or section from another. Thus, without departing from the teachings of the example embodiments, the first component, part, region, layer or section discussed below may be referred to as the second component, part, region, layer or section.

[0042] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings, in which embodiments of the present disclosure are schematically shown. In the drawings, variations from the shown shapes can be expected due to, for example, manufacturing techniques and / or tolerances. Accordingly, embodiments of the present disclosure should not be construed as limited to the specific shapes of the regions shown herein, but may include, for example, shape deviations caused by the manufacturing process.

[0043] Figures 1 to 2 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. Figure 1 shows a substrate processing apparatus and a part of the substrate processing apparatus (a cross-section of a part where an opening of the discharge unit 120 is not formed). Figure 2 shows a substrate processing apparatus and another part of the substrate processing apparatus (a cross-section of a part where an opening OP of the discharge unit 120 is formed).

[0044] Referring to Figure 1 and Figure 2 , the substrate processing apparatus may include a partition 100, a substrate support unit 150, a processing unit 110, a discharge unit 120, and a flow control unit 130. The substrate processing apparatus may include a reaction space 51 and a discharge space 55 connected to the reaction space 51.

[0045] The partition 100 is a chamber for accommodating the substrate support unit 150, and it may also be referred to as a chamber. In one embodiment, a reactor including the reaction space 51 is referred to as an inner chamber, and the overall structure of the substrate processing apparatus surrounding a plurality of reactors (e.g., four reactors) may be referred to as an outer chamber. A discharge line 18 may be provided in the partition 100. In some embodiments, the discharge line 18 may be formed to extend along the inner side of the sidewall of the partition 100. In one embodiment, the substrate processing apparatus includes a first surface and a second surface adjacent to the first surface, and the discharge line 18 may extend along a corner between the first surface and the second surface. In another embodiment, the discharge line 18 may be formed to extend along the inner side of the lower wall of the partition 100.

[0046] The processing unit 110 may be located on the substrate support unit 150 configured to support a substrate. A reaction space may be defined between the substrate support unit 150 and the processing unit 110. The processing unit 110 may serve as a first cover defining an upper surface of the reaction space 51. In other words, the first cover on the substrate support unit 150 may include at least one processing unit 110.

[0047] The processing unit 110 may include components that perform appropriate functions according to the functions of the substrate processing apparatus. For example, when the substrate processing apparatus performs a deposition function, the processing unit 110 may include a reactant supplier (e.g., a showerhead assembly). In another embodiment, when the reactor performs a polishing function, the processing unit 110 may include a polishing pad.

[0048] The processing unit 110 may be a conductor and may serve as an electrode for generating plasma. That is, the processing unit 110 may serve as one of the electrodes for generating plasma. Hereinafter, the processing unit 110 in this manner (using the processing unit 110 itself as an electrode) will be referred to as a gas supply electrode.

[0049] The substrate support unit 150 may be configured to provide an area for an object to be processed (not shown), such as a semiconductor or display substrate, to be seated. The substrate support unit 150 may be supported by a support (not shown) capable of vertical and rotational movement. In addition, the substrate support unit 150 may be a conductor and may be used as an electrode for generating plasma (i.e., the opposite electrode of the gas supply electrode).

[0050] The discharge unit 120 may be located between the processing unit 110 and the support TLD. The discharge unit 120 may extend to surround the reaction space 51. The gas in the reaction space 51 may be discharged to the discharge port 13 through the discharge unit 120. However, as will be described later, since the discharge port 13 is asymmetrically configured with respect to the reaction space 51, there is a possibility of generating discharge deflection. To prevent such deflection of the discharge, the flow control unit 130 may be installed in the discharge space. The flow control unit 130 may be configured to generate a discharge having a first discharge efficiency in the discharge space adjacent to the discharge port 13 (see Figure 2 ) and generate a discharge having a second discharge efficiency higher than the first discharge efficiency in the discharge space spaced apart from the discharge port 13 (see Figure 1 ).

[0051] In one embodiment, the discharge unit 120 may serve as a second cover that defines a side surface of the reaction space 51. The second cover including the discharge unit 120 may include a discharge space 55 connected to the reaction space 51. Accordingly, the discharge unit 120 may provide the discharge space 55. In addition, the discharge unit 120 may provide a space in which the processing unit 110 is accommodated. When the processing unit 110 is accommodated in the space, the processing unit 110 may be in contact with the discharge unit 120.

[0052] The discharge unit 120 may include a partition wall W between the reaction space 51 and the discharge space 55. The first surface (e.g., the outer surface) of the partition wall W may define the reaction space 51, and the second surface (i.e., the inner surface, which is the surface facing the first surface) of the partition wall W may define the discharge space 55. For example, the reaction space 51 may be defined by the first surface side of the partition wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110 serving as the first cover. In other words, one side of the reaction space 51 may be defined by the partition wall W of the discharge unit 120.

[0053] The discharge unit 120 may provide a part of the space for the object to be processed. For example, when the substrate processing apparatus performs a deposition function, a reaction space 51 for deposition may be defined by the discharge unit 120. In addition, a discharge space 55 may be defined inside the discharge unit 120. The reaction space 51 may be connected to the discharge port 13 through the discharge space 55 of the discharge unit 120. More specifically, the gas in the reaction space 51 may be discharged to the discharge port 13 through the gap E, the discharge space 55, and the opening OP.

[0054] The flow control unit 130 may be disposed in the discharge space 55. For example, the flow control unit 130 may extend to have a circumference corresponding to the shape of the substrate. In this case, the area defined by the circumference formed by extending the flow control unit 130 may be larger than the area of the substrate. In one embodiment, the flow control unit 130 may be formed to entirely extend over the discharge space 55. In another embodiment, the flow control unit 130 may be formed to extend over a part of the discharge space 55.

[0055] The flow control unit 130 may be introduced to prevent deflection of the discharge flow, which may occur when the discharge port 13 is asymmetrically arranged with respect to the reaction space 51. For example, the discharge efficiency of the discharge space 55 ( Figure 2 ) around the discharge port 13 may be greater than that of the discharge space 55 ( Figure 1 ) other than the discharge port 13, and the flow control unit 130 may be introduced to reduce such a difference in discharge efficiency.

[0056] In one embodiment, the flow control unit 130 may include a plurality of through holes arranged to surround the reaction space 51. With such an arrangement of the through holes, partial control of the discharge efficiency may be achieved. For example, the flow control unit 130 may include at least one flow control plate, and the flow control plate includes a plurality of through holes. The flow control plate may be implemented in various forms. In one example, the flow control plate may be implemented to have an "L" shape in the cross-section of the discharge space 55. In another example, the flow control plate may be implemented to have a "T" shape in the cross-section of the discharge space 55. In another example, the flow control plate may be implemented to have various shapes.

[0057] In some embodiments, the flow control unit 130 may generate a first discharge flow F1 (in Figure 2 ) that moves away from the discharge port 13 in a first region of the discharge space 55 (in Figure 2 ) adjacent to the discharge port 13. That is, the flow control unit 130 may generate the first discharge flow F1 (in Figure 2 ) in a direction opposite to the direction from the opening OP of the discharge unit 120 toward the discharge port 13.

[0058] In addition, the flow control unit 130 can generate a second discharge flow F2 (in Figure 2 ) in a second region of the discharge space 55 that is separate from the discharge port 13 and that is directed toward the discharge port 13. That is, the flow control unit 130 can generate the second discharge flow F2 (in Figure 1 ) in a direction from the opening OP of the discharge unit 120 toward the discharge port 13. Figure 1

[0059] In this way, the discharge in the discharge space 55 adjacent to the discharge port 13 ( Figure 2 ) can have a first discharge efficiency by the first discharge flow F1 moving away from the discharge port 13, and the discharge in the discharge space 55 far from the discharge port 13 ( Figure 1 ) can have a second discharge efficiency higher than the first discharge efficiency by the second discharge flow F2 being directed toward the discharge port 13.

[0060] In some embodiments, the flow control unit 130 can include a plurality of flow control plates. For example, the flow control unit 130 can include an upper flow control plate 133 and a lower flow control plate 135 disposed below the upper flow control plate 133.

[0061] The upper flow control plate 133 can include a plurality of first through holes TH1. The plurality of first through holes TH1 can be arranged along a first circumference having a first diameter. The lower flow control plate 135 can include a plurality of second through holes TH2. The plurality of second through holes TH2 can be arranged along a second circumference having a second diameter greater than the first diameter.

[0062] The gas in the reaction space 51 can be discharged to the discharge port 13 through the first through holes TH1 and the second through holes TH2. The first through holes TH1 arranged along the first circumference having a smaller diameter of the upper flow control plate 133 and the second through holes TH2 arranged along the second circumference having a larger diameter of the lower flow control plate 135 can generate a discharge flow from the discharge space 55 toward the reaction space 51. This discharge flow can also be defined as a discharge flow from the outer wall O of the discharge unit 120 toward the partition wall W of the discharge unit 120.

[0063] More specifically, an exhaust flow from the exhaust space 55 toward the reaction space 51 can be generated between the upper flow control plate 133 and the lower flow control plate 135. That is, the gas in the reaction space 51 can pass through the second through-hole TH2 arranged along the second circumference having a larger diameter, and then can pass through the first through-hole TH1 arranged along the first circumference having a smaller diameter. Since the second through-hole TH2 is located outside the exhaust space 55 and the first through-hole TH1 is located inside the exhaust space 55, an exhaust flow from the outside to the inside may be generated when the gas in the reaction space 51 is exhausted.

[0064] Such an exhaust flow from the outside to the inside can be in the exhaust space 55 adjacent to the exhaust port 13 ( Figure 2 ) and in the exhaust space 55 separated from the exhaust port 13 ( Figure 1 ) to generate different exhaust flows with respect to the exhaust port 13. That is, since the exhaust port 13 is arranged asymmetrically with respect to the reaction space 51 or the exhaust space 55, a forward exhaust flow toward the exhaust port 13 can be generated in a part, and a reverse exhaust flow opposite to the exhaust port 13 can be generated in another part.

[0065] More specifically, for example, the exhaust flow from the outside to the inside can include a first exhaust flow F1 (in Figure 2 ) which moves away from the exhaust port 13 in a first region (e.g., the space between the upper flow control plate 133 and the lower flow control plate 135) of the exhaust space 55 near the exhaust port 13 (in Figure 2 ). Additionally, the exhaust flow from the outside to the inside can include a second exhaust flow F2 (in Figure 1 ) which is guided toward the exhaust port 13 in a second region of the exhaust space 55 separated from the exhaust port 13 (in Figure 1 , e.g., the space between the upper flow control plate 133 and the lower flow control plate 135).

[0066] In the example, the exhaust unit 120 can include a connecting wall C and an outer wall O extending from the partition wall W. The outer wall O of the exhaust unit 120 is arranged parallel to the partition wall W and can contact the support member TLD. An opening OP can be formed in the outer wall O, and the exhaust unit 120 and the exhaust port 13 can be connected to each other through the opening OP. The connecting wall C of the exhaust unit 120 can extend to connect the partition wall W to the outer wall O. The connecting wall C can provide a contact surface with the processing unit 110. The processing unit 110 as the first cover and the exhaust unit 120 as the second cover can contact each other through the contact surface.

[0067] The support member TLD can contact the discharge unit 120 to support the processing unit 110 and the discharge unit 120. The support member TLD can be supported by the partition 100. As described above, the support member TLD can be used as a top cover that is supported by the partition 100 to cover the outer chamber while supporting the processing unit 110 as the first cover and the discharge unit 120 as the second cover.

[0068] The support member TLD can be between the partition 100 and the discharge port 13. The support member TLD can include a path P of the discharge pipeline 18 that connects the discharge port 13 to the partition 100. In one embodiment, the cross-sectional area of the path P and the cross-sectional area of the discharge pipeline 18 can be substantially the same. For example, when the path P and the discharge pipeline 18 are formed as circles, the diameter of the path P can be the same as the diameter of the discharge pipeline 18. In another embodiment, a sealing member (not shown) can be between the support member TLD and the partition 100. The sealing member can extend along the circumference of the path P or the discharge pipeline 18 to prevent gas leakage from the path P to the discharge pipeline 18.

[0069] [[ID=’6]]The support member TLD can be between the partition 100 and a cover (e.g., the second cover including the discharge unit 120). The airflow control ring FCR can be on the support member TLD. In addition, the airflow control ring FCR can be between the support member TLD and the substrate support unit 150. The airflow control ring FCR can slide on the support member TLD. The airflow control ring FCR can be spaced apart from the substrate support unit 150 to form a gap G, and the pressure balance between the reaction space 51 and the internal space of the outer chamber can be controlled by adjusting the gap G.

[0070] The partition wall W can provide a gap E that connects the reaction space 51 to the discharge space 55. For example, the gap E can be formed between the discharge unit 120 and the airflow control ring FCR. The gap E can be a channel between the reaction space 51 and the discharge space 55. Therefore, the reaction space 51 and the discharge space 55 can communicate with each other through the channel.

[0071] The discharge port 13 can include a channel that extends in a first direction toward the discharge unit 120 and a second direction different from the first direction. In an exemplary embodiment, the discharge port 13 can have an L-shaped or L-shaped-like channel formed therein, so that the gas in the discharge space 55 can flow laterally toward the discharge port 13 and can be discharged downward. In another example, the gas in the discharge space 55 can flow laterally and can be discharged upward. The gas discharged through the discharge port 13 can be transferred to a discharge pump (not shown) through the discharge pipeline 18, and the gas can be discharged to the outside through the discharge pump (not shown).

[0072] In some embodiments, the downstream flow control plate 135 may be arranged to contact the partition wall W and the outer wall O of the discharge unit 120. For example, the downstream flow control plate 135 may include a first portion extending between the partition wall W and the outer wall O, and this first portion contacts the partition wall W and the outer wall O. The downstream flow control plate 135 may further include a second portion that extends from the first portion and contacts the support member TLD. The second through hole TH2 of the downstream flow control plate 135 may be arranged to penetrate the first portion.

[0073] In some embodiments, the upstream flow control plate 133 may be arranged to contact the partition wall W and the outer wall O of the discharge unit 120. For example, the upstream flow control plate 133 may include a third portion extending between the partition wall W and the outer wall O, and this third portion contacts the partition wall W and the outer wall O. The upstream flow control plate 133 may further include a fourth portion that extends from the third portion and contacts the downstream flow control plate 135. The first through hole TH1 of the upstream flow control plate 133 may be arranged to penetrate the third portion.

[0074] The opening OP may be arranged above the gap E, and the upstream flow control plate 133 and the downstream flow control plate 135 may be arranged between the opening OP and the gap E. Thus, the gas in the reaction space 51 can be discharged to the discharge port 13 through the gap E, the second through hole TH2 of the downstream flow control plate 135, the first through hole TH1 of the upstream flow control plate 133, and the opening OP. The path in this discharge space includes the following paths:

[0075] (1) A first path extending from the gap E to the outer wall O;

[0076] (2) A second path extending from the first path through the downstream flow control plate 135, and the second path extends through the second through hole TH2;

[0077] (3) A third path extending from the second path toward the partition wall W, wherein, as described above, a forward discharge flow and a reverse discharge flow relative to the opening OP can be generated through the third path;

[0078] (4) A fourth path extending from the third path through the upstream flow control plate 133, and this fourth path extends through the first through hole TH1; and

[0079] (5) A fifth path extending from the fourth path to the opening OP.

[0080] Thus, according to an embodiment of the inventive concept, by disposing at least one flow control plate in an exhaust unit (e.g., an exhaust pipe) surrounding a reactor and forming through-holes on each plate, the deflection of the exhaust flow can be improved through asymmetrically arranged exhaust ports. In addition, by changing the size, shape, and density of the through-holes, the deflection of the exhaust flow in the reaction space can be improved. In particular, the deflection of the exhaust flow can be further improved by providing a unit for forming a reverse exhaust flow in the exhaust unit.

[0081] Figures 3 to 5 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. More specifically, Figure 3 shows a part of the substrate processing apparatus (e.g., exhaust pipelines 18 and 28, connection port CP, external path EC connected to an external pump, etc.) except for the lid (i.e., the processing unit and the exhaust unit) and the exhaust ports. Figure 4 is viewed from a first direction Figure 3 of Figure 5 is viewed from a second direction Figure 3 of

[0082] Referring to Figures 3 to 5 , exhaust pipelines 18 and 28 are formed in partition 100. Exhaust pipelines 18 and 28 are connected to external path EC through connection port CP, and external path EC is connected to main exhaust path 211. Thus, the gas in the reaction space is exhausted to exhaust pump EP via exhaust ports 13 and 23, exhaust pipelines 18 and 28, external path EC, and main exhaust path 211. Although not shown in the drawings, according to an embodiment of the inventive concept, each of exhaust ports 13 and 23 is provided with a flow control unit.

[0083] As Figure 4 shown, two reactors R1a and R1b in a first direction use internal exhaust pipelines 18a and 18b, while the remaining two reactors in a direction opposite to the first direction use other internal exhaust pipelines 28a, 28b (see Figure 3 ). The two internal exhaust pipelines 18 and 28 are respectively connected to external path EC through connection ports CP and CP'. External path EC can be implemented in one configuration or in multiple configurations.

[0084] As a result, it can be seen that the four reactors use the external paths EC and EC', and at least one of the main discharge path 211 and the discharge pump EP. An isolation valve 210 can be added to the main discharge path 211. Thus, during maintenance, the discharge pump EP can be protected from the external atmosphere by the isolation valve 210. In addition, a pressure control valve (e.g., a throttle valve) can be added to the main discharge path 211. The external path EC can be fixed to be in close contact with the lower surface of the partition 100 of the outer chamber without moving. In an alternative embodiment, the two internal discharge pipelines 18 and 28 can be connected to each other within the bottom wall of the partition 100 of the outer chamber and directly connected to the main discharge path 211 without the external path EC.

[0085] Referring again to Figure 3 , the first external path EC connected to the first connection port CP can extend downward from the partition 100 toward the first corner portion C1 of the outer chamber. Additionally, a second external path EC' connected to a second connection port CP' (not shown) can extend downward from the partition 100 toward the second corner portion C2 of the outer chamber. The discharge pump EP can be disposed on one surface of the substrate processing apparatus, e.g., corresponding to the center between the first corner portion C1 and the second corner portion C2. The first external path EC can extend from the portion extending to the first corner portion C1 to the discharge pump EP. Additionally, the second external path EC' can extend from the portion extending to the second corner portion C2 to the discharge pump EP.

[0086] Figures 6 to 8 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment can be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repetitive description of the embodiment will not be given.

[0087] Figure 6 shows the upper surface of the multi-reactor chamber 311. A plurality of reactors R are disposed in the chamber 311, and one side of each reactor R is connected to a discharge port 313. Figure 6 shows that each reactor R is connected to each discharge port 313, and the discharge ports 313 are asymmetrically disposed with respect to the center of each reactor R.

[0088] A plurality of discharge pipelines 318 can be formed in the partition of the chamber 311. For example, the chamber 311 can be rectangular in shape, and the plurality of discharge pipelines 318 can include a first discharge pipeline, a second discharge pipeline, a third discharge pipeline, and a fourth discharge pipeline. In some embodiments, the first to fourth discharge pipelines can be disposed corresponding to the four vertices of the rectangle, respectively.

[0089] The chamber 311 may include a first reactor, a second reactor, a third reactor, and a fourth reactor. Each reactor may include a substrate support unit, a processing unit, an exhaust unit, and an exhaust port.

[0090] More specifically, the first reactor may include a first substrate support unit (not shown) accommodated in a partition of the chamber 311, a first processing unit 312 on the first substrate support unit, a first exhaust unit 314 connected to a first reaction space between the first substrate support unit and the first processing unit 312, and a first exhaust port 313 connected to at least a part of the first exhaust unit 314. In this case, the first exhaust port 313 may be configured to connect the first exhaust unit 314 to a first exhaust line 318 in the partition.

[0091] More specifically, the second reactor may include a second substrate support unit (not shown) accommodated in a partition of the chamber 311, a second processing unit 312 on the second substrate support unit, a second exhaust unit 314 connected to a second reaction space between the second substrate support unit and the second processing unit 312, and a second exhaust port 313 connected to at least a part of the second exhaust unit 314. In this case, the second exhaust port 313 may be configured to connect the second exhaust unit 314 to a second exhaust line 318 in the partition.

[0092] The third reactor may include a third substrate support unit (not shown) accommodated in a partition of the chamber 311, a third processing unit 312 on the third substrate support unit, a third exhaust unit 314 connected to a third reaction space between the third substrate support unit and the third processing unit 312, and a third exhaust port 313 connected to at least a part of the third exhaust unit 314. In this case, the third exhaust port 313 may be configured to connect the third exhaust unit 314 to a third exhaust line 318 in the partition.

[0093] The fourth reactor may include a fourth substrate support unit (not shown) accommodated in a partition of the chamber 311, a fourth processing unit 312 on the fourth substrate support unit, a fourth exhaust unit 314 connected to a fourth reaction space between the fourth substrate support unit and the fourth processing unit 312, and a fourth exhaust port 313 connected to at least a part of the fourth exhaust unit 314. In this case, the fourth exhaust port 313 may be configured to connect the fourth exhaust unit 314 to a fourth exhaust line 318 in the partition.

[0094] As referred to above Figures 3 to 5 The substrate processing apparatus may further include: ( Figure 3 and Figure 5a first connection port CP, which connects the first discharge pipeline and the second discharge pipeline; and ( Figure 3 and 5 a second connection port CP', which connects the third discharge pipeline to the fourth discharge pipeline. Additionally, the substrate processing equipment may further include at least one of an external path EC and EC'( Figure 3 ), the external path EC and EC' connect the first connection port to the discharge pump EP( Figure 4 ), and connect the second connection port to the discharge pump. The external paths EC and EC' may be disposed outside the partition of the chamber 311.

[0095] Figure 7 A side perspective view of the reactor R is shown. The reaction space of the reactor R may be defined as the space surrounded by: a cover having a discharge unit 314 (e.g., a discharge pipe); an airflow control ring 315 below the cover; a processing unit (e.g., a showerhead (not shown)) in the internal space surrounded by the discharge unit 34; and a substrate support unit (e.g., a heater (not shown)) arranged to face the processing unit.

[0096] The discharge unit 314 and the airflow control ring 315 may be separated from each other to form a gap. A space of, for example, 1 mm may be formed therebetween, and the gas in the reaction space is discharged to a discharge pump (not shown) through the discharge space 316, the discharge port 313, and the discharge pipeline 318 in the discharge unit 314 through the gap (i.e., the void). The discharge port 313 may include a passage for discharging the gas downward.

[0097] In Figure 7 and 8 , the gas discharge path is indicated by arrows. As can be seen from the above drawings, according to the inventive concept, a side pumping structure for discharging gas through the interior of the chamber wall is adopted.

[0098] The gas supplied from the top of the reactor to the reaction space through the processing unit 312 may be radially dispersed. The radially dispersed gas may move toward the discharge space 316 of the discharge unit 314. The gas radially dispersed and directed to the discharge space 316 may be discharged into the discharge space 316 through the gap between the discharge unit 314 and the airflow control ring 315. The gas is discharged to the outside through the discharge port 313 connected to one surface of the discharge unit 314.

[0099] In this way, the gas remaining in the reaction space has a side pumping structure for discharging through the side surface of the reactor. More specifically, the discharge pipeline 318 formed in the partition is formed in the side wall and the bottom wall of the chamber 311, and the discharge pipeline 318 and the discharge unit 314 communicate with each other through the discharge port 313.

[0100] Referring toFigures 6 to 8 A substrate processing apparatus having a lateral discharge structure, in which gas is supplied to each reactor through a central portion (i.e., processing unit 312) above each reactor, and the gas is discharged through a discharge port 313 installed at the side of the reactor. As described above, the discharge system may include a discharge path formed in the inner wall of the chamber, and the gas in the reaction space may be discharged through the discharge port installed at the side of the reactor and the discharge path formed in the inner wall of the chamber. One end of the discharge path formed in the inner wall of the chamber may be connected to the discharge port, and the other end may be connected to a discharge pump outside the chamber.

[0101] Referring to Figures 6 to 8 , the gas supplied to the reaction space from the top of the reactor through a processing unit 312 such as a showerhead is discharged to an external discharge pump (not shown) through a discharge unit, a discharge path 316 that is an inner space of the discharge unit 314, a discharge port 313 connected to one surface of the discharge unit 314, and a discharge path 318 in the inner wall of the chamber, passing through a gap between the discharge unit 314 and the airflow control ring 315.

[0102] A substrate processing apparatus including a plurality of such reactors has a side pumping structure, in which the gas of the reactor is discharged through the side of the reactor. More specifically, a main discharge path is formed in the side wall and the bottom wall of the chamber 311, and the main discharge path and the discharge unit 314 communicate with each other through the discharge port 313.

[0103] However, as Figure 8 shown, when the discharge ports 313 are asymmetrically arranged, the uniformity of discharge in the reaction space is reduced. In other words, the discharge flow E1 in the direction toward the discharge port 313 and the discharge flow E2 in the direction opposite to the discharge port 313 are different from each other (i.e., E1≠E2). For example, the flow rate of the discharge flow E1 may be greater than the flow rate of the discharge flow E2.

[0104] As described above, when the discharge ports 313 are asymmetrically arranged, since the discharge flow varies with position, the symmetry of the film profile and the thickness of the finally deposited film deteriorate around the substrate. This deterioration of symmetry leads to an increase in the difficulty of subsequent processes and device defects. Therefore, the present invention discloses an apparatus for achieving uniform discharge of gas in a reactor of a semiconductor substrate processing apparatus having a side discharge system. More specifically, the present invention discloses an apparatus for controlling the airflow in the discharge path.

[0105] Figure 9 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0106] Reference Figure 9 , the flow control plates 11 and 12 are disposed in the discharge path 6 in the discharge pipe 4 of the substrate processing apparatus. More specifically, the upper flow control plate 12 and the lower flow control plate 11 are configured to be stacked. Discharge holes are arranged in each of the flow control plates 11 and 12, and the discharge flow in the discharge space 6 in the discharge pipe 4 can be controlled according to the configuration and arrangement of the discharge holes.

[0107] When gas is supplied to a substrate (not shown) on the heater block 10 through the nozzle 2, the gas moves through the gap between the discharge pipe 4 and the flow control ring 5 to the discharge space 6. During this movement, the gas passes through the upper flow control plate 12 and the lower flow control plate 11.

[0108] When the gas passes through the upper flow control plate 12 and the lower flow control plate 11, the discharge efficiency of the gas can be changed. For example, in the discharge space separated from the discharge port, a positive discharge flow toward the discharge port can be generated, thereby improving the discharge efficiency. At the same time, in the discharge space adjacent to the discharge port, a discharge flow in the opposite direction is generated to move away from the discharge port, thereby reducing the discharge efficiency.

[0109] Figure 10 and Figure 11 are diagrams of a comparative example of the discharge flow in an existing substrate processing apparatus and the discharge flow in the substrate processing apparatus of the present invention.

[0110] Figure 10 shows the discharge flow in a reactor without a flow control plate. The gas in the reactor is discharged through the discharge path formed inside the chamber wall via the gap between the discharge pipe and the gas flow control ring, the discharge space in the discharge pipe, and the discharge port.

[0111] Figure 11 shows an embodiment of the discharge flow according to the present disclosure, and the gas is discharged through the lower flow control plate, the upper flow control plate, and the discharge port in the discharge pipe and the discharge path formed inside the chamber wall.

[0112] Contrary to Figure 10 's discharge flow, according to Figure 11 's embodiment of the discharge flow, the gas in the reactor is not directly discharged toward the discharge port. That is, Figure 11 's discharge flow has a discharge flow in the opposite direction to the discharge port in the space between the lower flow control plate and the upper flow control plate.

[0113] Reverse discharge flow can be achieved by different arrangements of the discharge holes in the lower flow control plate and the upper flow control plate. In other words, by configuring the discharge holes on the lower flow control plate to be close to the discharge port and the discharge holes on the upper flow control plate to be far from the discharge port, a reverse discharge flow can be achieved. Through this arrangement, the technical effect of controlling the discharge flow in the discharge pipe can be achieved.

[0114] Figure 12 is a view of an embodiment of the upper flow control plate and the lower flow control plate. Referring to Figure 12 , the discharge air flow in the discharge pipe can be controlled by changing the size of the discharge holes, the gap between the holes, and the density of the holes (the number of holes per unit length) on the upper flow control plate and the lower flow control plate. For example, the diameter of the plurality of first through holes formed in the upper flow control plate can be larger than the diameter of the plurality of second through holes formed in the lower flow control plate.

[0115] FIG. 13 is a diagram showing various embodiments of the arrangement of the discharge holes on the upper flow control plate and the lower flow control plate in the direction facing the discharge port in the reaction space. Referring to FIG. 13(a), as described above, the diameter of the plurality of first through holes formed in the upper flow control plate can be larger than the diameter of the plurality of second through holes formed in the lower flow control plate. At the same time, the density of the first through holes and the second through holes can be the same.

[0116] Referring to FIG. 13(b), in another embodiment, the density of the first through holes of the upper flow control plate can be less than the density of the second through holes of the lower flow control plate. At the same time, the diameter of the first through holes can be larger than the diameter of the second through holes. In another embodiment, the diameter of the first through holes can be equal to or less than the diameter of the second through holes.

[0117] Referring to FIG. 13(c), in another embodiment, the first through holes of the upper flow control plate can be arranged alternately with the second through holes of the lower flow control plate. At the same time, the diameter of the first through holes can be the same as the diameter of the second through holes. In another embodiment, the diameter of the first through holes can be different from the diameter of the second through holes.

[0118] FIG. 13 shows an embodiment in which the size, shape, and arrangement of the second through holes are changed with respect to the lower flow control plate. However, the size, shape, and arrangement of the discharge holes on the upper flow control plate can be changed, or the size, shape, and arrangement of the discharge holes on both plates can be changed simultaneously.

[0119] In some embodiments, through-holes having the arrangement of FIG. 13(a) (i.e., the diameter of the first through-hole is larger than that of the second through-hole, and the densities of both are the same) may be implemented near the position of the discharge port, and through-holes having the arrangement of FIG. 13(b) (i.e., the diameter of the first through-hole is larger than that of the second through-hole, and the density of the second through-hole is greater than that of the first through-hole) may be implemented at a position away from the discharge port. By providing such discharge holes, the technical effect that can be achieved is: the deflection of the discharge flow in the reaction space can be improved.

[0120] Figure 14 FIG. is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0121] Referring to Figure 14 , the upper flow control plate may include a first region A adjacent to the discharge port and a second region B separated from the discharge port. In this case, among the plurality of first through-holes in the upper flow control plate, the through-holes in the first region A may be arranged along a third circumference having a third diameter, and the through-holes in the second region B may be arranged along a fourth circumference having a fourth diameter greater than the third diameter.

[0122] The plurality of second through-holes in the lower flow control plate may be arranged along a fourth circumference having a fourth diameter. In this case, in the first region A near the discharge port, a reverse discharge flow may be formed in the discharge pipe. That is, by causing the gas to move from the second through-holes arranged along the fourth diameter of the lower flow control plate to the first through-holes arranged along the third diameter smaller than the fourth diameter of the upper flow control plate, a flow opposite to the suction force (suction direction) of the discharge port may be generated. Due to this reverse discharge flow, the discharge path of the gas in the first region A near the discharge port becomes longer, and thus the discharge efficiency may decrease.

[0123] Meanwhile, this reverse discharge flow may not be formed in the second region B away from the discharge port. That is, by causing the gas to move from the second through-holes arranged along the fourth diameter of the lower flow control plate to the first through-holes arranged along the fourth diameter of the upper flow control plate, the gas may move from the lower flow control plate to the upper flow control plate without the above-described reverse discharge flow. Therefore, the discharge path of the gas in the second region B near the discharge port becomes relatively short, and thus the discharge efficiency can be improved.

[0124] In the above figures, two flow control plates are arranged in the discharge pipe, but two or more flow control plates can be arranged, or one flow control plate can be arranged. The deflection of the discharge flow in the reaction space can be controlled and improved by changing the number, size, and density of the discharge holes on the flow control plate according to the relative distance and position from each point on the flow control plate to the discharge port.

[0125] In some embodiments, the flow control plate may include a first extension extending in a first direction and a second extension extending in a second direction different from the first direction. When the second extension extends from one end of the first extension, an "L"-shaped flow control plate can be achieved. When the second extension extends from a portion between the two ends of the first extension, a "T"-shaped flow control plate can be achieved. Figure 15 is a view of a flow control plate configured to have a "T"-shaped cross-section.

[0126] In the case of the "T"-shaped flow control plate, through holes can be formed in each of the first extension and the second extension. The number and / or size of the through holes can be adjusted according to the relative positions of the through holes. Similarly, as Figure 11 shown, a plurality of "T"-shaped flow control plates can also be stacked longitudinally. In addition, a plurality of "T"-shaped flow control plates can be arranged in the horizontal direction.

[0127] It should be understood that the embodiments described herein should be considered only in a descriptive sense and not for the purpose of limitation. The description of the features or aspects in each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the drawings, those of ordinary skill in the art will understand that various changes can be made in form and detail without departing from the spirit and scope of the present disclosure as defined by the appended claims.

Claims

1. A substrate processing apparatus, comprising: An exhaust unit providing an exhaust space surrounding a reaction space; An exhaust port connected to the exhaust unit; And A flow control unit disposed in the exhaust space, Wherein the exhaust port is asymmetrically disposed with respect to the reaction space, and The flow control unit includes: An upper flow control plate including a plurality of first through holes; And A lower flow control plate disposed below the upper flow control plate and including a plurality of second through holes, The upper flow control plate includes a first region adjacent to the exhaust port and a second region separated from the exhaust port, The through holes in the first region of the plurality of first through holes are arranged along a third circumference having a third diameter, and The through holes in the second region of the plurality of first through holes are arranged along a fourth circumference having a fourth diameter greater than the third diameter.

2. The substrate processing apparatus according to claim 1, wherein An exhaust flow from the exhaust space toward the reaction space is generated between the upper flow control plate and the lower flow control plate. [[ID=**********]]3. The substrate processing apparatus according to claim 2, wherein The exhaust flow includes: A first exhaust flow that moves away from the exhaust port in a first region of the exhaust space adjacent to the exhaust port; and A second exhaust flow that is guided toward the exhaust port in a second region of the exhaust space spaced apart from the exhaust port.

4. The substrate processing apparatus according to claim 1, wherein The diameters of the plurality of first through holes are different from the diameters of the plurality of second through holes.

5. The substrate processing apparatus according to claim 1, wherein The densities of the plurality of first through holes are different from the densities of the plurality of second through holes.

6. The substrate processing apparatus according to claim 1, wherein The plurality of first through holes are arranged alternately with the plurality of second through holes.

7. The substrate processing apparatus according to claim 1, wherein The exhaust unit further includes: A partition wall defining a side portion of the reaction space; An outer wall parallel to the partition wall; and A connecting wall extending to connect the partition wall to the outer wall.

8. The substrate processing apparatus according to claim 7, wherein At least one of the upper flow control plate and the lower flow control plate is arranged to contact the partition wall and the outer wall.

9. The substrate processing apparatus according to claim 7, further comprising: A support member configured to support the exhaust unit, Wherein the reaction space and the exhaust space communicate with each other through a gap between the partition wall and the support member.

10. The substrate processing apparatus according to claim 9, wherein The lower flow control plate includes: A first portion extending between the partition wall and the outer wall; and A second portion extending from the first portion and contacting the support member, Wherein the plurality of second through holes are arranged to pass through the first portion.

11. The substrate processing apparatus according to claim 9, wherein The outer wall includes an opening connecting the exhaust unit to the exhaust port, and the opening is above the gap.

12. The substrate processing apparatus according to claim 11, wherein, the upper flow control plate and the lower flow control plate are disposed between the opening and the gap.

13. The substrate processing apparatus according to claim 12, wherein, the gas in the reaction space is discharged to the discharge port along a path in the discharge space, and the path includes: a first path extending from the gap toward the outer wall; a second path extending from the first path to pass through the lower flow control plate; a third path extending from the second path toward the partition wall; and a fourth path extending from the third path to pass through the upper flow control plate.

14. The substrate processing apparatus according to claim 1, wherein, the flow control unit is configured to generate a discharge having a first discharge efficiency in the discharge space adjacent to the discharge port, and generate a discharge having a second discharge efficiency higher than the first discharge efficiency in the discharge space spaced apart from the discharge port.

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