Stage and substrate processing apparatus

Abstract

The present invention provides a stage and a substrate processing apparatus which stably apply a voltage to a ring. The stage includes a substrate placement surface which places a substrate; a ring placement surface which places a ring around the substrate placement surface; and an electrode which is formed in the ring placement surface and which is electrically conductive, and which is capable of supplying a voltage to the ring.

Description

TECHNICAL FIELD

[0001] The present application relates to a stage and a substrate processing apparatus. BACKGROUND

[0002] For example, Patent Document 1 discloses a plasma processing apparatus in which a focus ring is disposed so as to surround a substrate placed on an electrostatic chuck. In order to adjust the upper end position of a sheath layer on the focus ring, a direct current voltage is applied to the focus ring.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Application Publication No. 2007-258417 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present application seeks to provide a technique for stably applying a voltage to a focus ring.

[0008] MEANS FOR SOLVING THE PROBLEMS

[0009] According to one embodiment of the present application, there is provided a stage including: a substrate placement surface on which a substrate is placed; a focus ring placement surface on which a focus ring is placed around the substrate placement surface; and an electrode formed on the focus ring placement surface and electrically conductive, the electrode being capable of supplying a voltage to the focus ring.

[0010] EFFECTS OF THE INVENTION

[0011] According to the present application, a technique for stably applying a voltage to a focus ring is provided. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a cross-sectional view showing the outline structure of a substrate processing apparatus according to the present embodiment.

[0013] Figure 2 is a top surface view of an electrostatic chuck of the substrate processing apparatus according to the present embodiment.

[0014] Figure 3 is a view showing power supply to a focus ring of a substrate processing apparatus according to the present embodiment.

[0015] Figure 4 is a view showing a modification of power supply to a focus ring of a substrate processing apparatus according to the present embodiment.

[0016] Figure 5 is a view showing a modification of power supply to a focus ring of a substrate processing apparatus according to the present embodiment.

[0017] Figure 6FIG. 1 is a view illustrating a substrate processing apparatus according to the present embodiment.

[0018] Figure 7 FIG. 1 is a view illustrating a substrate processing apparatus according to the present embodiment.

[0019] Figure 8 FIG. 1 is a view illustrating a substrate processing apparatus according to the present embodiment.

[0020] Figure 9 FIG. 1 is a view illustrating a substrate processing apparatus according to the present embodiment.

[0021] Figure 10 FIG. 1 is a view illustrating a substrate processing apparatus according to the present embodiment.

[0022] BRIEF DESCRIPTION OF DRAWINGS

[0023] 1 substrate processing apparatus

[0024] 10 stage

[0025] 11 pedestal

[0026] 25 electrostatic chuck

[0027] 25a center portion

[0028] 25a1 substrate placement surface

[0029] 25b outer peripheral portion

[0030] 25b1 edge ring placement surface

[0031] 91 power supply portion

[0032] 92 wiring

[0033] 93 wiring DETAILED DESCRIPTION

[0034] Hereinafter, an embodiment for carrying out the present application will be described with reference to the drawings. Furthermore, in the present specification and the drawings, the same reference numerals are attached to substantially the same structures, and thus repeated description will be omitted.

[0035] <Overall structure of substrate processing apparatus>

[0036] First, with reference to FIG. 1, one example of the overall structure of the substrate processing apparatus 1 will be described. Figure 1 Figure 1 ​is a cross-sectional view showing a schematic configuration of the substrate processing apparatus 1 according to the present embodiment. In addition, in the present embodiment, an example in which the substrate processing apparatus 1 is a RIE (Reactive Ion Etching) type substrate processing apparatus will be described. However, the substrate processing apparatus 1 can also be a plasma etching apparatus, a plasma CVD (Chemical Vapor Deposition) apparatus, or the like.

[0037] In Figure 1 the substrate processing apparatus 1 has a cylindrical processing container 2 of a ground of metal, such as aluminum or stainless steel, in which a circular plate-shaped stage 10 on which a substrate W is placed is disposed. The stage 10 has a susceptor 11 and an electrostatic chuck 25. The susceptor 11 functions as a lower electrode. The susceptor 11 is composed of, for example, aluminum. The susceptor 11 is supported by a cylindrical support member 12 of insulation to a cylindrical support 13 extending vertically upward from the bottom of the processing container 2.

[0038] An exhaust passage 14 is formed between the side wall of the processing container 2 and the cylindrical support 13, a ring-shaped baffle 15 is disposed at the inlet or midway of the exhaust passage 14, and an exhaust port 16 is provided at the bottom, which is connected to an exhaust device 18 via an exhaust pipe 17. Here, the exhaust device 18 has a dry pump and a vacuum pump, and reduces the pressure in the processing space in the processing container 2 to a prescribed vacuum degree. In addition, the exhaust pipe 17 has an APC (automatic pressure control valve) as a variable butterfly valve, which automatically controls the pressure in the processing container 2. Further, a gate valve 20 that opens and closes a substrate W feeding and discharging port 19 is installed in the side wall of the processing container 2.

[0039] The susceptor 11 is connected to a first high-frequency power source 21a via a first matcher 22a. In addition, the susceptor 11 is connected to a second high-frequency power source 21b via a second matcher 22b. The first high-frequency power source 21a supplies high-frequency electric power for plasma generation at a prescribed frequency (for example, 100 MHz) to the susceptor 11. The second high-frequency power source 21b supplies high-frequency electric power for ion attraction at a prescribed frequency (for example, 13 MHz) lower than that of the first high-frequency power source 21a to the susceptor 11.

[0040] A shower head 24 that also functions as an upper electrode is disposed at the top of the processing container 2. Thereby, high-frequency voltages at two frequencies from the first high-frequency power source 21a and the second high-frequency power source 21b are applied between the susceptor 11 and the shower head 24.

[0041] An electrostatic chuck 25 is provided on the top surface of the susceptor 11 to attract the substrate W using electrostatic attraction. The electrostatic chuck 25 comprises a disk-shaped central portion 25a capable of mounting the substrate W, and an annular peripheral portion 25b surrounding the central portion 25a. The central portion 25a protrudes upward in the figure relative to the peripheral portion 25b. The top surface of the central portion 25a serves as a substrate mounting surface 25a1 on which the substrate W is mounted. The top surface of the peripheral portion 25b serves as an edge ring mounting surface 25b1 on which an edge ring 30 is mounted. The edge ring mounting surface 25b1 supports the edge ring 30 around the substrate mounting surface 25a1. The edge ring 30 is also referred to as a focus ring. Furthermore, the central portion 25a is constructed by sandwiching an electrode plate 26 made of a conductive film between a pair of dielectric films. The electrode plate 26 is electrically connected to a DC power supply 27. The peripheral portion 25b is constructed by sandwiching an electrode plate 29 made of a conductive film between a pair of dielectric films. The electrode plate 29 is electrically connected to the DC power supply 28 .

[0042] DC power supplies 27 and 28 are capable of varying the level and polarity of the DC voltage they supply. DC power supply 27 applies a DC voltage to electrode plate 26 under the control of control unit 43, described later. DC power supply 28 applies a DC voltage to electrode plate 29 under the control of control unit 43. Electrostatic chuck 25 utilizes the voltage applied from DC power supply 27 to electrode plate 26 to generate electrostatic force, such as Coulomb force, and utilizes the electrostatic power to attract and hold substrate W on electrostatic chuck 25. Furthermore, electrostatic chuck 25 utilizes the voltage applied from DC power supply 28 to electrode plate 29 to generate electrostatic force, such as Coulomb force, and utilizes the electrostatic power to attract and hold edge ring 30 on electrostatic chuck 25.

[0043] Furthermore, in the present embodiment, the electrostatic chuck 25 for substrate W and the electrostatic chuck for edge ring 30 are integrally formed. However, the electrostatic chuck for substrate W and the electrostatic chuck for edge ring 30 may be separate electrostatic chucks. Specifically, the electrode plate 26 and the electrode plate 29 may be sandwiched between separate dielectric films. Furthermore, while the electrode plate 29 in the present embodiment is a unipolar electrode, a bipolar electrode may also be employed. Furthermore, in the bipolar configuration, the edge ring 30 can be held in a fixed position even when plasma is not being generated.

[0044] A power supply portion 91 , which is a conductive electrode for supplying voltage to the edge ring 30 , is formed on the edge ring mounting surface 25 b 1 of the electrostatic chuck 25 . Figure 2Fig. 1 is a plan view of the electrostatic chuck 25 of the substrate processing apparatus 1 according to the present embodiment. The electrostatic chuck 25 is provided with a plurality of power supply portions 91, which are referred to as power supply portions 91a, 91b, 91c,..., formed at equal intervals in the circumferential direction on the edge ring placement surface 25b1. The power supply portions 91 are provided on the outer side of the substrate placement surface 25a1. The power supply portions 91a, 91b, 91c,..., are collectively referred to as the power supply portions 91. The power supply portions 91 can be provided in a ring shape on the edge ring placement surface 25b1. In order to supply power to the power supply portions 91, a wiring 92 and a wiring 93 are provided. In order to protect the wiring 92, a protective layer 97 is provided on the side surface of the stage 10. The power supply portions 91 are connected to a power source 95 via the wiring 92 and the wiring 93. Details of the power supply portions 91, the wiring 92, and the wiring 93 are described later.

[0045] A refrigerant chamber 31, which is ring-shaped and extends in the circumferential direction, is provided inside the susceptor 11. The refrigerant chamber 31 is circulated with a refrigerant, such as cooling water, of a predetermined temperature from a cooling unit 32 via pipes 33 and 34, and the processing temperature of the substrate W on the electrostatic chuck 25 is controlled by the temperature of the refrigerant. The refrigerant is a temperature adjustment medium circulated in the pipes 33 and 34. The temperature adjustment medium not only cools the susceptor 11 and the substrate W, but can also heat them.

[0046] The electrostatic chuck 25 is connected to a heat conductive gas supply portion 35 via a gas supply line 36. The heat conductive gas supply portion 35 supplies a heat conductive gas to a space sandwiched by the central portion 25a of the electrostatic chuck 25 and the substrate W using the gas supply line 36. As the heat conductive gas, a gas having thermal conductivity, such as He gas, is suitably used.

[0047] The shower head 24 of the top portion includes an electrode plate 37 having a lower surface with a large number of gas vent holes 37a and an electrode support 38 that supports the electrode plate 37 in a detachable manner. A buffer chamber 39 is provided inside the electrode support 38. A gas introduction port 38a, which communicates with the buffer chamber 39, is connected to a processing gas supply portion 40 via a gas supply pipe 41.

[0048] The respective components of the substrate processing apparatus 1 are connected to a control portion 43. For example, the exhaust device 18, the first high frequency power source 21a, the second high frequency power source 21b, the direct current power source 27, the direct current power source 28, the power source 95, the cooling unit 32, the heat conductive gas supply portion 35, and the processing gas supply portion 40 are connected to the control portion 43. The control portion 43 controls the respective components of the substrate processing apparatus 1.

[0049] The control section 43 includes a central processing unit (CPU) and a storage device such as a memory, and performs desired processing in the substrate processing device 1 by reading and executing a program and processing scheme stored in the storage device. For example, the control section 43 performs electrostatic chucking processing for electrostatic chucking of the edge ring 30.

[0050] In the substrate processing device 1, at the time of dry etching processing, first, the gate valve 20 is brought to an open state, and the substrate W as a processing target is fed into the processing container 2 and placed on the electrostatic chuck 25. Then, in the substrate processing device 1, the processing gas (for example, a mixed gas composed of C4F8 gas, O2 gas, and Ar gas) is introduced into the processing container 2 at a prescribed flow rate and flow rate ratio by the processing gas supply section 40, and the pressure in the processing container 2 is brought to a prescribed value by the exhaust device 18 or the like.

[0051] Then, in the substrate processing device 1, high-frequency electric power of different frequencies is supplied from the first high-frequency power supply 21a and the second high-frequency power supply 21b to the susceptor 11, respectively. Further, in the substrate processing device 1, a direct-current voltage is applied from the direct-current power supply 27 to the electrode plate 26 of the electrostatic chuck 25, and the substrate W is attracted to the electrostatic chuck 25. Further, in the substrate processing device 1, a direct-current voltage is applied from the direct-current power supply 28 to the electrode plate 29 of the electrostatic chuck 25, and the edge ring 30 is attracted to the electrostatic chuck 25. The processing gas released from the shower head 24 is plasma-ized, and etching processing is performed on the substrate W using radicals and ions in the plasma.

[0052] <Structure of power supply to power supply section 91>

[0053] With regard to the substrate processing device 1 of the present embodiment, the structure of power supply to the power supply section 91 formed on the edge ring placement surface 25bl will be described.

[0054] Figure 3 is a view for explaining the power supply of the edge ring of the substrate processing device of the present embodiment. Specifically, it is an enlarged sectional view of the vicinity of the edge ring 30.

[0055] A power supply portion 91 as an electrode of electric conductivity is formed on the edge ring placement surface 25bl of the outer peripheral portion 25b of the electrostatic chuck 25. The power supply portion 91 is formed of a conductor such as a metal or an alloy, for example, gold, aluminum, tungsten, nickel, germanium, antimony, tellurium, tantalum, titanium, ruthenium, platinum, molybdenum, tin, indium, or an alloy containing any of these. The power supply portion 91 is formed by, for example, a vapor deposition method such as a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, or the like, or a liquid deposition method such as plating, coating, a sol-gel method, spin coating, or the like, or even spraying, printing, or the like. The thickness of the power supply portion 91 can be any thickness as long as the electrostatic chuck 25 can attract. However, in order to cool the edge ring 30, in a case where a heat conductive gas (for example, He gas) is supplied from the edge ring placement surface 25bl, it is preferable that the protruding height of the electrode (the thickness of the electrode) be 5 μm or less. Further, a portion of the edge ring placement surface 25bl can be dug downward, and an electrode can be formed at the bottom so that the electrode surface of the power supply portion 91 matches the height of the surface of the edge ring placement surface 25bl. In this case, it is preferable that the height be made uniform after the electrode is formed. The power supply portion 91 is one example of an electrode of electric conductivity that is formed on the edge ring placement surface 25bl and supplies a voltage to the edge ring 30.

[0056] The power supply portion 91 of the present embodiment is arranged at equal intervals in the circumferential direction of the edge ring placement surface 25bl as shown in FIG. 2. This is in order to apply a DC voltage and RF power for edge ring control to the edge ring 30 with the electrostatic chuck 25. However, in a case where the edge ring 30 is not adsorbed with the electrostatic chuck 25, the power supply portion 91 can be formed on the entire surface of the edge ring placement surface 25bl. Figure 2

[0057] A wiring 92 is provided on the side surface of the electrostatic chuck 25 and the susceptor 11 with a dielectric film (for example, ceramic) for the electrostatic chuck 25 interposed therebetween. The dielectric film is formed by spraying ceramic. The wiring 92 is formed of a conductor such as a metal or an alloy, for example, gold, aluminum, tungsten, nickel, germanium, antimony, tellurium, tantalum, titanium, ruthenium, platinum, molybdenum, tin, indium, or an alloy containing any of these. The wiring 92 is formed by, for example, a vapor deposition method such as a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, or the like, or a liquid deposition method such as plating, coating, a sol-gel method, spin coating, or the like, or even spraying, printing, or the like. The wiring 92 is connected between the power supply portion 91 and a wiring 93 on the lower surface of the susceptor 11. The wiring 92 is one example of a first wiring that is connected to the power supply portion 91. Further, the wiring 92 can use a structure that is insulated from and penetrates the susceptor 11 and the electrode plate 29.

[0058] ​A wiring 93 is provided on the lower surface (back surface) of the pedestal 11 through a dielectric film (for example, ceramic). The wiring 93 can be a conductor such as a metal or an alloy, for example, formed of gold, aluminum, tungsten, nickel, germanium, antimony, tellurium, tantalum, titanium, ruthenium, platinum, molybdenum, tin, indium, or an alloy containing any of them. In addition, in the case where the lower surface (back surface) of the pedestal 11 is in the atmosphere, the wiring 93 can be copper or a copper alloy. The wiring 93 is formed, for example, by a vapor deposition method such as a physical vapor deposition method (PVD), a chemical vapor deposition method (CVD), or the like, or a liquid deposition method such as plating, coating, a sol-gel method, spin coating, or the like, or even spraying, printing, or the like. The wiring 93 is connected to a power supply 95. The power supply 95 supplies a direct current voltage, an RF pulse to the power supply portion 91. The direct current voltage can also be applied in a pulsed manner. The RF can be continuously supplied. In addition, an electric power of an arbitrary waveform can be supplied. The RF can be a high-frequency electric power output from the first high-frequency power supply 21a, a high-frequency electric power output from the second high-frequency power supply 21b, or a high-frequency electric power of both.

[0059] The position of the sheath layer changes when the edge ring 30 is consumed. The power supply 95 supplies power to the edge ring 30 to adjust the position of the sheath layer that has changed. The wiring 93 is an example of a second wiring connected to the wiring 92 that is an example of a first wiring. In the case where the wiring 92 and the wiring 93 are in a cylindrical, circular disc, or non-shape, it is preferable that they are composed of wires or the like distributed equally to ensure plasma uniformity. In addition, the power supply to the wiring 93 is not limited to the power supply from the power supply 95. For example, the wiring 93 can be supplied with power in a manner in which the current supplied to the pedestal 11, the electrode plate 26, 29 is adjusted with a variable impedance element.

[0060] In order to protect the wiring 92, a protective layer 97 is provided on the side surface of the stage 10. The protective layer 97 is formed of ceramic, for example. In the case of ceramic, it is formed by spraying ceramic.

[0061] <Effects>

[0062] The stage 10 of the present embodiment has the power supply portion 91 on the edge ring placement surface 25b1 on which the edge ring 30 is placed. Thus, it is possible to stably apply a voltage to the edge ring 30. Furthermore, by adsorbing the edge ring 30 with the electrostatic chuck 25 of the stage 10, it is possible to hold the edge ring 30 on the edge ring placement surface 25b1. In this way, by holding the edge ring 30 on the edge ring placement surface 25b1 and pressing the power supply portion 91 to the edge ring placement surface 25b1 with the edge ring 30, it is possible to more stably ensure the contact state with the edge ring 30 and to apply a voltage in a well-reproducible manner.

[0063] As a reference example, consider a case where power is supplied while pressing the edge ring 30 on the side surface with a pressing member or the like. In order to stably supply power to the edge ring 30, it is necessary to press the edge ring 30 with a pressing member or the like with a load of a prescribed level or more. When the edge ring 30 is pressed with a strong load with the pressing member or the like, there is a case where the position of the edge ring 30 is misaligned, or the edge ring 30 is deformed. In contrast, in the stage 10 of the present embodiment, the edge ring 30 is placed on the edge ring placement surface 25bl so that power can be supplied. With the attraction force when the edge ring 30 is placed, the power supply part 91 can be brought into sufficient contact with the edge ring 30. Thus, power can be stably supplied to the edge ring 30. Further, by placing the edge ring 30 on the edge ring placement surface 25bl and supplying power thereto, deformation and misalignment of the edge ring 30 as described above can be prevented. In addition, since the edge ring 30 needs to be replaced due to consumption, the edge ring 30 can be simply detached by simply turning off the electrostatic chucking of the edge ring 30. As described above, the edge ring 30 can be simply detached, and thus the replacement work, automatic replacement, can be made simple and ended as soon as possible.

[0064] In addition, the stage 10 of the present embodiment is provided with a wiring 93 on the lower surface of the stage 10. For example, an elastic member connected to the power supply 95 can be provided on the upper surface of the cylindrical holding member 12, and the elastic member can be brought into contact with the wiring 93 provided on the lower surface of the stage 10 to supply power thereto. When configured as such, the power supply part 91 can be supplied with power by placing the stage 10 on the cylindrical holding member 12. As described above, the work at the time of manufacturing and setting up the substrate processing apparatus 1 can be simplified.

[0065] <Modification Example 1>

[0066] Next, a modification example of the method of supplying power to the power supply part 91 will be described. In addition, in the following modification example, the connection to the terminal 100 provided to the cylindrical holding member 12 will be described. Further, the terminal 100 is connected to the power supply 95, and is supplied with electric power.

[0067] Figure 4 is a view for explaining a first modification example of the present embodiment of the method of supplying power to the edge ring 30 of the substrate processing apparatus 1. In the first modification example, the terminal 100 is connected to the wiring 92a through an elastic contact 101. The wiring 92a is provided on the side surface of the electrostatic chuck 25. The elastic contact 101 presses the side surface of the wiring 92a while supplying power to the wiring 92a. In this way, power can be stably supplied to the edge ring 30. Further, the elastic contact 101 is one example of an elastic member that presses the side surface of the first wiring while supplying power thereto.

[0068] <Modification Example 2>

[0069] Figure 5 is a view explaining a second modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 of the present embodiment. In the second modification, a multi-contact 102 is connected between the terminal 100 and the wiring 92b. The wiring 92b is provided to the side surface of the electrostatic chuck 25 and the susceptor 11. The multi-contact 102 presses the side surface of the wiring 92b while supplying power to the wiring 92b. In this way, the edge ring 30 can be stably supplied with power. Further, the multi-contact 102 is one example of an elastic member that presses the side surface of the first wiring while supplying power.

[0070] <Modification 3>

[0071] Figure 6 is a view explaining a third modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 of the present embodiment. In the third modification, a terminal 103 is provided to the wiring 92c, and a power supply pin 110 is connected between the terminal 103 and the terminal 100. The wiring 92c is provided to the side surface of the electrostatic chuck 25. In this way, the edge ring 30 can be stably supplied with power.

[0072] <Modification 4>

[0073] Figure 7 is a view explaining a fourth modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 of the present embodiment. In the fourth modification, a power supply pin 110 is connected between the wiring 92d and the terminal 100. The wiring 92c is provided to the side surface of the electrostatic chuck 25. In this way, the edge ring 30 can be stably supplied with power.

[0074] <Modification 5>

[0075] Figure 8 is a view explaining a fifth modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 of the present embodiment. In the fifth modification, a recess 104 is formed to the wiring 92e, and a power supply pin 110 is connected between the recess 104 and the terminal 100. The wiring 92e is provided to the side surface of the electrostatic chuck 25 and the susceptor 11. In this way, the edge ring 30 can be stably supplied with power.

[0076] <Modification 6>

[0077] Figure 9 is a view explaining a sixth modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 of the present embodiment. In the sixth modification, a lead 105 is connected between the wiring 92f and the terminal 100. The wiring 92f is provided to the side surface of the electrostatic chuck 25. The wiring 92f and the lead 105 are connected by spot welding. In this way, the edge ring 30 can be stably supplied with power.

[0078] <Modification 7>

[0079] Figure 10 FIG. 7 is a view illustrating a seventh modification of the power supply to the edge ring 30 of the substrate processing apparatus 1 according to the present embodiment. In the seventh modification, a wire 106 is connected between the wiring 92g and the terminal 100. The wiring 92g is provided on the side surface of the electrostatic chuck 25. The wire 106 is attached to the pedestal 11 from the wiring 92g via an insulating screw 107. In this way, the edge ring 30 can be stably powered.

[0080] <Other Modifications>

[0081] The stage, the substrate processing apparatus, and the edge ring according to the present embodiment disclosed herein are illustrative in all respects and should not be considered as limiting. The above-described embodiments can be modified in various ways without departing from the scope of the appended claims and their spirit. The contents described in the above-described embodiments can be obtained in other configurations within a range not causing contradiction, and can be combined within a range not causing contradiction.

[0082] The substrate processing apparatus according to the present embodiment can apply any of a device for generating plasma based on a Capacitively Coupled Plasma (CCP), an Inductively Coupled Plasma (ICP), a microwave, such as plasma generated by a Radial Line Slot Antenna (RLSA), an Electron Cyclotron Resonance Plasma (ECR), and a Helicon Wave Plasma (HWP).

Claims

1. A table, characterized in that Comprising: a substrate placement surface on which a substrate is placed; an edge ring placement surface on which an edge ring is placed around the substrate placement surface; an electrostatic chuck having a dielectric film and an adsorption electrode sandwiched between the dielectric film, the electrostatic chuck being configured to adsorb the edge ring to the edge ring placement surface constituting an upper surface of the dielectric film using the adsorption electrode; and an electrically conductive electrode other than the adsorption electrode, formed on the dielectric film in a manner that at least a part of the dielectric film is exposed to the edge ring placement surface, capable of supplying a voltage to the edge ring.

2. The stage according to claim 1, wherein: the electrically conductive electrode is an electrically conductive film.

3. The stage according to claim 2, wherein: the electrically conductive film is formed by plating or coating.

4. The stage according to claim 2, wherein: the electrically conductive film is formed by any one of physical vapor deposition, chemical vapor deposition, sol-gel method, spin coating, spray coating, and printing.

5. The stage according to any one of claims 1 to 4, wherein: the electrode is formed of gold, aluminum, tungsten, nickel, germanium, antimony, tellurium, tantalum, titanium, ruthenium, platinum, molybdenum, tin, indium, or an alloy containing any of them.

6. The stage according to any one of claims 1 to 4, wherein: the electrode has a plurality of power supply portions in the edge ring placement surface, capable of supplying a direct current voltage or a high frequency electric power to the plurality of power supply portions respectively.

7. The stage according to claim 6, wherein: the direct current voltage or the high frequency electric power is supplied in a pulse shape.

8. The stage according to claim 6, wherein: the plurality of power supply portions are disposed equidistantly in the edge ring placement surface.

9. The stage according to claim 6, wherein: the plurality of power supply portions are disposed in a radial shape in the edge ring placement surface.

10. The stage according to claim 6, wherein: the plurality of power supply portions are disposed in a ring shape in the edge ring placement surface.

11. The stage according to claim 6, wherein: a first wiring connected to the plurality of power supply portions is provided on a side surface of the stage, capable of supplying power to the plurality of power supply portions via the first wiring.

12. The stage according to claim 11, wherein: an elastic member capable of supplying power while pressing a side surface of the first wiring is provided on the first wiring.

13. The stage according to claim 6, wherein: a first wiring connected to the plurality of power supply portions is provided on a side surface of the stage, and a second wiring connected to the first wiring is provided on a back surface of the stage.

14. The stage according to claim 13, wherein: an elastic member capable of supplying power while pressing a side surface of the second wiring is provided on the second wiring.

15. A substrate processing apparatus, comprising: the stage according to any one of claims 1 to 14.

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