Substrate support plate, substrate processing equipment including the same, and substrate processing method

Abstract

A substrate processing apparatus capable of selectively processing a thin film in its bevel region includes a substrate support plate for supporting a substrate to be processed, the substrate support plate including: an interior having an upper surface area smaller than the area of the substrate to be processed; and a peripheral portion surrounding the interior, wherein the upper surface of the peripheral portion is below the upper surface of the interior.

Description

[0001] Cross - Reference to Related Applications

[0002] This application claims priority under 35 U.S.C.§119 to U.S. Patent Application No. 62 / 942,617, filed on December 02, 2019, with the United States Patent and Trademark Office, the entire content of which is incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a substrate support plate, and more particularly, to a substrate support plate, a substrate processing apparatus including the substrate support plate, and a substrate processing method using the substrate support plate. Background Art

[0004] When forming a thin film on a substrate, portions of the thin film deposited on the upper and lower edges of the substrate may be peeled off in a subsequent process. Thus, the films deposited on the upper and lower edges of the substrate may act as contaminants, for example, forming particles in the reaction space, which may lead to an increase in the device failure rate.

[0005] Figure 1 A thin film deposited on the substrate edge is shown. Refer to Figure 1 , a thin film 94 is deposited on the upper surface 92, the side surface 95, and a part of the rear surface 93 of the substrate 91. Specifically, the films a and b deposited on the side surface 95 and a part of the rear surface 93 of the substrate are peeled off in a subsequent process, thereby causing contamination of the reactor and the structures on the substrate. Summary of the Invention

[0006] One or more embodiments include selectively processing a thin film deposited on a substrate edge (e.g., a beveled region). More specifically, one or more embodiments include a substrate processing apparatus and a substrate processing method capable of removing a thin film deposited on a substrate edge.

[0007] One or more embodiments include selectively removing a thin film on a substrate edge such as a beveled edge region. Additionally, one or more embodiments include ensuring symmetry of the bevel etch width on the substrate by controlling processing parameters (e.g., supply conditions for RF power and / or flow control of incoming gases), regardless of the alignment position of the substrate on a substrate support plate such as a susceptor.

[0008] Other aspects will be set forth in part in the description below, and in part will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0009] According to one or more embodiments, a substrate support plate for supporting a substrate to be processed includes: an interior having an upper surface area smaller than the area of the substrate to be processed; and a peripheral portion surrounding the interior, wherein the upper surface of the peripheral portion is below the upper surface of the interior, and the peripheral portion may include at least one path.

[0010] According to an example of the substrate support plate, the substrate support plate may further include at least one pad disposed on the interior.

[0011] According to another example of the substrate support plate, the path may extend from a part of the peripheral portion to another part of the peripheral portion.

[0012] According to another example of the substrate support plate, the path may include: a first portion extending from a side surface of the substrate support plate toward the peripheral portion; and a second portion extending from the peripheral portion toward the upper surface of the substrate support plate.

[0013] According to another example of the substrate support plate, the path may include a plurality of paths, and the plurality of paths may be formed symmetrically with respect to the center of the substrate support plate.

[0014] According to another example of the substrate support plate, the interior may include through holes having a diameter different from the diameter of the path.

[0015] According to another example of the substrate support plate, the distance from the center of the substrate support plate to the path may be less than the radius of the substrate to be processed.

[0016] According to one or more embodiments, a substrate processing apparatus includes: a substrate support plate including an interior having an upper surface area smaller than the area of the substrate to be processed; and a peripheral portion surrounding the interior, wherein the upper surface of the peripheral portion is below the upper surface of the interior; and a gas supply unit on the substrate support plate, wherein a first distance between the interior and the gas supply unit may be less than a second distance between the peripheral portion and the gas supply unit.

[0017] According to an example of the substrate processing apparatus, when the substrate to be processed is mounted on the interior, the distance between the substrate to be processed and the gas supply unit may be about 1 mm or less, and the second distance between the peripheral portion and the gas supply unit may be about 3 mm or more.

[0018] According to another example of the substrate processing apparatus, the interior may form a convex portion of the substrate support plate, and the peripheral portion may form a concave portion of the substrate support plate.

[0019] According to another example of the substrate processing apparatus, the gas supply unit may include a plurality of injection holes, and the plurality of injection holes may be distributed over an area smaller than the area of the substrate to be processed.

[0020] According to another example of a substrate processing apparatus, a plurality of injection holes may be distributed over an area smaller than the area of the upper surface of the interior.

[0021] According to another example of a substrate processing apparatus, the gas supply unit includes a plurality of injection holes, and a first lower surface of the gas supply unit in a region where the plurality of injection holes are distributed is flush with a second lower surface of the gas supply unit outside the region where the plurality of injection holes are distributed.

[0022] According to another example of a substrate processing apparatus, the distance between the upper surface of the substrate to be processed and the first lower surface of the gas supply unit and the distance between the upper surface of the substrate to be processed and the second lower surface of the gas supply unit are constant. Thus, without a separate alignment operation, a film on an edge region of the substrate to be processed provided between the outer peripheral portion and the gas supply unit can be processed.

[0023] According to another example of a substrate processing apparatus, a reaction space may be formed between the substrate support plate and the gas supply unit, and the reaction space may include a first reaction space between the interior and the gas supply unit; and a second reaction space between the outer peripheral portion and the gas supply unit.

[0024] According to another example of a substrate processing apparatus, power may be supplied between the gas supply unit and the substrate support plate to generate plasma, and less plasma is generated in the first reaction space than in the second reaction space.

[0025] According to another example of a substrate processing apparatus, the outer peripheral portion may include at least one path.

[0026] According to another example of a substrate processing apparatus, the substrate processing apparatus may be configured to supply a gas that reacts with a film on the substrate to be processed through the path.

[0027] According to another example of a substrate processing apparatus, the substrate processing apparatus may be configured to supply a gas different from the gas that reacts with the film through the gas supply unit.

[0028] According to one or more embodiments, a substrate processing method includes: mounting a substrate to be processed on the substrate support plate described above; generating plasma by supplying power between the gas supply unit on the substrate support plate and the substrate support plate; and using the plasma to remove at least a part of a film on an edge region of the substrate to be processed, wherein during the generation of the plasma, less plasma is generated in a first space between the interior and the gas supply unit than in a second space between the outer peripheral portion and the gas supply unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects, features, and advantages of certain embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0030] Figure 1 A thin film deposited on the edge of a substrate is shown;

[0031] Figure 2 is a view of a substrate support plate according to an embodiment of the inventive concept;

[0032] Figures 3 to 6 is a view of a substrate processing apparatus according to an embodiment of the inventive concept;

[0033] Figure 7 and 8 is a view of a substrate support plate according to an embodiment of the inventive concept;

[0034] Figure 9 and 10 is a view of a substrate processing apparatus according to an embodiment of the inventive concept;

[0035] Figure 11 is a view showing removal of a carbon thin film by reaction of oxygen radicals with the carbon thin film;

[0036] Figure 12 is a view of a region where the carbon thin film is removed from the upper edge of the substrate according to the RF power application time;

[0037] Figure 13 is a view showing removal of the carbon film according to position;

[0038] Figure 14 is a view showing removal of the carbon thin film from a 1 mm edge region of the upper surface of an actual substrate; and

[0039] Figure 15 is a view of a substrate processing apparatus according to an embodiment of the inventive concept. DETAILED DESCRIPTION

[0040] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals always refer to like elements. In this regard, these embodiments may have different forms and should not be construed as limited to the descriptions set forth herein. Accordingly, the embodiments are described below only by referring to the drawings to explain aspects of the present specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. When an expression such as "at least one" modifies the entire list of elements, it does not modify the individual elements in the list.

[0041] The terms used herein are for the purpose of describing particular embodiments and are not intended to limit the disclosure. As used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context clearly indicates otherwise. It will also be understood that the terms "comprises", "comprising", and their variants specify the presence of the stated features, integers, steps, processes, components, parts, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, processes, components, parts, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0042] It will be understood that although the terms first, second, etc. may be used herein to describe various components, parts, regions, layers, and / or sections, these components, parts, regions, layers, and / or sections should not be limited by these terms. These terms do not denote any order, quantity, or importance, but are only used to distinguish one component, region, layer, and / or section from another. Thus, without departing from the teachings of the embodiments, the first component, part, region, layer, and / or section discussed below may be referred to as the second component, part, region, layer, and / or section.

[0043] Hereinafter, embodiments of the disclosure will be described with reference to the drawings, in which the embodiments of the disclosure are schematically illustrated. In the drawings, variations from the shown shapes can be expected due to, for example, manufacturing techniques and / or tolerances. Accordingly, embodiments of the disclosure should not be construed as limited to the specific shape regions shown herein, but may include, for example, shape deviations resulting from the manufacturing process.

[0044] Figure 2 is a view of a substrate support plate according to an embodiment of the inventive concept. Figure 2 (a) is a plan view of the substrate support plate, Figure 2 (b) is a bottom view of the substrate support plate, Figure 2 (c) is a cross-sectional view of the substrate support plate taken along line A-A and line B-B.

[0045] Referring to Figure 2 , the substrate support plate is a structure for supporting a substrate to be processed, and the substrate to be processed can be placed on the substrate support plate. The substrate support plate may include an interior I, a peripheral portion P, and at least one pad D. Additionally, a path F and a through hole TH may be formed in the substrate support plate.

[0046] The interior I may be defined as the central region of the substrate support plate. The interior I may be formed to have an upper surface with an area smaller than that of the substrate to be processed. The upper surface of the interior I may have a shape corresponding to the shape of the substrate to be processed. For example, when the substrate to be processed is a circular substrate having a first diameter, the interior I may have a circular upper surface with a second diameter smaller than the first diameter.

[0047] The peripheral portion P can be formed to surround the interior I. For example, when the interior I is a plate-like structure with a circular upper surface, the peripheral portion P can be an annular configuration surrounding the plate-like structure. In one example, the peripheral portion P can extend such that the upper surface of the peripheral portion P is disposed below the upper surface of the interior I. Thus, a substrate support plate having a shape in which the interior I protrudes from the peripheral portion P can be formed. In an alternative embodiment, the interior I can form a convex portion of the substrate support plate, while the peripheral portion P can form a concave portion of the substrate support plate (see Figure 5 and 6 ).

[0048] At least one pad D can be on the interior I. For example, there can be multiple at least one pad D, and the multiple pads can be formed symmetrically with respect to the center of the substrate support plate. A substrate to be processed can be placed on the substrate support plate to contact at least one pad D. In one example, at least one pad D can be configured to prevent the substrate to be processed placed on the substrate support plate from moving horizontally. For example, at least one pad D can include a material having a certain roughness, and the roughness of the material can prevent the substrate to be processed from slipping.

[0049] The peripheral portion P can include at least one path F. In one example, as Figure 2 shown, the path F can extend from one part of the peripheral portion to another part of the peripheral portion. In another example, the path F can extend from one part of the peripheral portion to a part of the interior. As described above, the fact that the peripheral portion includes at least one path F means that at least one end of the path is formed at the peripheral portion.

[0050] In an example where the path F extends from one part of the peripheral portion P to another part of the peripheral portion P, the path F can be formed to penetrate the peripheral portion P. In an alternative example, the path F can include a first portion F1 extending from a side surface of the substrate support plate toward the peripheral portion P and a second portion F2 extending from the peripheral portion P to the upper surface of the substrate support plate.

[0051] The path F can be used as a movement path for a gas. For example, a gas that reacts with a thin film on the substrate to be processed can be supplied through the path F. While supplying the gas through the path F, the upper surface of the peripheral portion P is disposed below the upper surface of the interior I, whereby partial processing of a thin film on an edge region (e.g., bevel region) of the substrate to be processed located on the substrate support plate can be achieved.

[0052] Path F may include a plurality of paths. In one example, the plurality of paths may be formed symmetrically with respect to the center of the substrate support plate. Also, the plurality of paths may extend to face the rear surface of the substrate to be processed. For example, the distance of path F from the center of the substrate support plate to the peripheral portion P may be less than the radius of the substrate to be processed. Thus, the gas can be uniformly supplied to the rear surface of the substrate to be processed located on the substrate support plate through the plurality of symmetrically formed paths.

[0053] A through hole TH may be formed in the interior I. The through hole TH formed in the peripheral portion of the interior I may provide a space in which the substrate support pins for moving the substrate during substrate mounting move. In addition, a fixing pin (not shown) for fixing the position of the substrate support plate may be inserted into the through hole located at the center of the interior I. In this regard, the through hole TH is different from path F which serves as a gas movement path. For example, the through hole TH may be formed to have a diameter different from that of path F.

[0054] Figure 3 is a view of a substrate processing apparatus according to an embodiment of the inventive concept. The substrate processing apparatus according to these embodiments may include at least some features of the substrate support plate 103 according to the above embodiments. Hereinafter, a repeated description of the embodiments will not be given.

[0055] Figure 3 A cross-section of a semiconductor processing apparatus 100 is shown. The semiconductor processing apparatus 100 may include a substrate support plate 103 and a gas supply unit 109 on the substrate support plate 103.

[0056] The gas supply unit 109 may include a plurality of injection holes. The plurality of injection holes may be formed to face the interior of the substrate support plate 103. In one example, the plurality of injection holes may be distributed over an area smaller than the area of the substrate to be processed (see Figure 3 and 4 etc.). In another example, the plurality of injection holes may be distributed over an area smaller than the area of the upper surface of the interior (see Figure 5 and 6 etc.). Such a distribution shape of the injection holes may contribute to promoting partial processing of the thin film in the edge region of the substrate to be processed.

[0057] A first gas may be supplied through the plurality of injection holes of the gas supply unit 109. At the same time, as described above, a second gas different from the first gas may be supplied through path F of the substrate support plate 103. The first gas may include an inert gas (e.g., argon) or a highly stable gas (e.g., nitrogen). The second gas may include a material that reacts with the thin film on the substrate to be processed. For example, the second gas may include a gas for oxidizing the thin film (e.g., oxygen).

[0058] Similarly as described above, the substrate support plate 103 may include at least some configurations of the substrate support plate according to the above embodiments. For example, the substrate support plate 103 may include: an interior I, the area of the upper surface of which is smaller than the area of the substrate to be processed; and a peripheral portion P surrounding the interior I. The upper surface of the peripheral portion P may also be disposed below the upper surface of the interior I.

[0059] Since the interior I is located at a level higher than the peripheral portion P, a first distance between the interior I and the gas supply unit 109 may be smaller than a second distance between the peripheral portion P and the gas supply unit 109. That is, since the lower surface of the gas supply unit 109 is flat, a difference may occur between the first distance and the second distance. In an alternative embodiment, the lower surface of the gas supply unit 109 may not be flat (see Figure 15 ), and even in such a case, the first distance between the interior and the gas supply unit 109 may be smaller than the second distance between the peripheral portion and the gas supply unit 109.

[0060] According to some examples, when the substrate to be processed is mounted on the interior I, the distance between the substrate to be processed and the gas supply unit 109 may be about 1 mm or less, and the second distance between the peripheral portion P and the gas supply unit 109 may be about 3 mm or more. Thus, by forming a sufficient distance between the peripheral portion P and the gas supply unit 109, partial processing of the thin film on the edge region of the substrate to be processed located on the substrate support plate 103 can be achieved.

[0061] In the above embodiments, when the lower surface of the gas supply unit 109 is flat and a difference between the first distance and the second distance is achieved, further technical advantages can be realized. More specifically, when the first lower surface of the gas supply unit 109 in the region where a plurality of injection holes are distributed is flush with the second lower surface of the gas supply unit 109 outside the region where the plurality of injection holes are distributed (see Figure 4 ), the distance between the substrate to be processed and the gas supply unit 109 may be constant.

[0062] In this case, the distance between the upper surface of the substrate to be processed and the first lower surface and the distance between the upper surface of the substrate to be processed and the second lower surface are constant. As a result, without a separate alignment operation, the thin film (see Figure 1 a and b) on the edge region of the substrate to be processed disposed between the peripheral portion P and the gas supply unit 109 can be processed. For example, by adjusting the flow rate ratio of the first gas supplied through the gas supply unit 109 and the second gas supplied through at least one path F, the thin film on the edge region can be removed with respect to the substrate to be processed in a misaligned state.

[0063] Meanwhile, when the second lower surface outside the injection hole is disposed at a level different from the level of the first lower surface surrounding the injection hole (see, for example, Figure 15 ), the degree of treatment (e.g., removal) of the thin film on the edge region of the substrate to be processed may be affected by the distance between the thin film and the lower surface. Therefore, in this case, the alignment form of the substrate to be processed on the substrate support plate 103 will affect the symmetry of the treatment of the thin film on the edge region.

[0064] Referring again to Figure 3 , in the semiconductor processing apparatus 100, the reactor wall 101 may be in contact with the substrate support plate 103. More specifically, a reaction space 125 may be formed between the substrate support plate 103 and the gas supply unit 109, while the lower surface of the reactor wall 101 is in contact with the substrate support plate 103 serving as a lower electrode. The reaction space 125 may include a first reaction space 125-1 between the interior and the gas supply unit 109 and a second reaction space 125-2 between the outer peripheral portion and the gas supply unit 109.

[0065] In some embodiments, the first reaction space 125-1 may be configured to process a thin film on the central region of the substrate to be processed. The second reaction space 125-2 may be configured to process a thin film on the edge region of the substrate to be processed. For example, in order to process the thin film on the substrate, power may be supplied between the gas supply unit 109 and the substrate support plate 103, and plasma may be generated in the second reaction space 125-2 by a power source. In some other examples, plasma may be generated in both the first reaction space 125-1 and the second reaction space 125-2 by a power source.

[0066] As described above, since the distance between the substrate support plate 103 and the gas supply unit 109 in the first reaction space 125-1 is less than the distance between the substrate support plate 103 and the gas supply unit 109 in the second reaction space 125-2, less plasma can be formed in the first reaction space 125-1 at a smaller distance by Paschen's law. In other words, the plasma in the first reaction space 125-1 may be less than the plasma in the second reaction space 125-2. In this specification, it should be noted that the plasma in the first reaction space being less than the plasma in the second reaction space includes the case where plasma is formed in the second reaction space and no plasma is formed in the first reaction space.

[0067] The substrate support plate 103 may be configured to be face-sealed with the reactor wall 101. The reaction space 125 may be formed between the reactor wall 101 and the substrate support plate 103 by face-sealing. Additionally, an exhaust path 117 may be formed between the gas flow control device 105 and the gas supply unit 109 and the reactor wall by face-sealing.

[0068] The gas flow control device 105 and the gas supply unit 109 may be disposed between the reactor wall 101 and the substrate support plate 103. The gas flow control device 105 and the gas supply unit 109 may be integrally formed or may be of a separated type configuration, in which the portion having the injection holes 133 is separated. In the separated structure, the gas flow control device 105 may be stacked on the gas supply unit 109. Alternatively, the gas supply unit 109 may also be separately configured, in which case the gas supply unit 109 may include a gas injection device having a plurality of through holes and a gas passage stacked on the gas injection device.

[0069] The gas flow control device 105 may include a plate and side walls 123 protruding from the plate. A plurality of holes 111 penetrating the side walls 123 may be formed in the side walls 123.

[0070] Grooves 127, 129 and 317 for accommodating a sealing member such as an O-ring may be formed between the reactor wall 101 and the gas flow control device 105 and between the gas flow control device 105 and the gas supply unit 109. Through the sealing member, external gas can be prevented from entering the reaction space 125. Additionally, through the sealing member, the reaction gas in the reaction space 125 can leave along a defined path (i.e., see Figure 4 the exhaust path 117 and the gas outlet 115). Thus, the reaction gas can be prevented from flowing out into areas other than the defined path.

[0071] The gas supply unit 109 may be used as an electrode in plasma processing such as the capacitively coupled plasma (CCP) method. In this case, the gas supply unit 109 may include a metallic material such as aluminum (Al). In the CCP method, the substrate support plate 103 may also be used as an electrode, such that capacitive coupling can be achieved through the gas supply unit 109 serving as the first electrode and the substrate support plate 103 serving as the second electrode.

[0072] More specifically, the plasma generated in an external plasma generator (not shown) may be transmitted to the gas supply unit 109 through the RF rod 313 ( Figure 5 ). The RF rod may be mechanically connected to the gas supply unit 109 through an RF rod hole 303 ( Figure 5 ) penetrating the upper portions of the reactor wall 101 and the gas flow control device 105.

[0073] Alternatively, the gas supply unit 109 is formed of a conductor while the gas flow control device 105 includes an insulating material such as ceramic, such that the gas supply unit 109 serving as a plasma electrode can be insulated from the reactor wall 101.

[0074] AsFigure 3 As shown, a gas inlet 113 is formed in the upper part of the reactor wall 101, penetrating the reactor wall 101 and the central part of the gas flow control device 105. Additionally, a gas flow path 119 is also formed in the gas supply unit 109, so that the reaction gas supplied from an external gas supply unit (not shown) through the gas inlet 113 can be uniformly supplied to each injection hole 133 of the gas supply unit 109.

[0075] Additionally, as Figure 3 shown, a gas outlet 115 is provided at the top of the reactor wall 101 and is asymmetric with respect to the gas inlet 113. Although not shown in the figure, the gas outlet 115 can be provided symmetrically with respect to the gas inlet 113. Additionally, the side walls of the reactor wall 101 and the gas flow control device 105 (and the side walls of the gas supply unit 109) are separated from each other, so that an exhaust path 117 through which the residual gas of the reaction gas is discharged can be formed after the processing.

[0076] The film on the edge region of the substrate to be processed can be removed by the above substrate processing equipment, and the operation for removing the film can be performed as follows.

[0077] - First operation: Mount the substrate to be processed on the substrate support plate 103. For example, the substrate support plate 103 descends and the substrate support pins rise through the through holes. Then the substrate to be processed is transferred from the robotic arm to the substrate support pins. Then, the substrate support pins descend and the substrate to be processed is seated on the inside of the substrate support plate 103. Thereafter, the substrate support plate 103 rises to form a first reaction space 125-1 and a second reaction space 125-2.

[0078] - Second operation: Supply power between the gas supply unit 109 on the substrate support plate 103 and the substrate support plate 103 to generate plasma. For example, a second gas is supplied to the reaction space 125 through path F, and then the second gas is ionized by the potential difference formed between the gas supply unit 109 and the substrate support plate 103 to generate free radicals. The free radicals can react with the film of the substrate to be processed.

[0079] Meanwhile, the upper surface of the inside of the substrate support plate 103 can be located above the upper surface of the peripheral part. Therefore, a first distance between the inside and the gas supply unit 109 can be smaller than a second distance between the peripheral part and the gas supply unit 109. As a result, although the number of free radicals generated in the first reaction space 125-1 is relatively small or non-existent when the distance between the inside of the substrate support plate 103 and the gas supply unit 109 is relatively small, the number of free radicals generated in the second reaction space 125-2 will be relatively large when the distance between the peripheral part of the substrate support plate 103 and the gas supply unit 109 is relatively large.

[0080] - Third operation: The generated plasma is used to remove at least a part of the thin film on the edge region of the substrate to be processed. For example, the thin film can be removed by reacting with the radicals generated in the second operation. As described above, since relatively many radicals are formed in the peripheral portion of the substrate support plate 103, most of the thin film can be removed in the edge region of the substrate to be processed.

[0081] Figure 4 A substrate processing apparatus according to an embodiment of the inventive concept is schematically illustrated. The substrate processing apparatus according to the embodiment may be a variant of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0082] Referring to Figure 4 , the first gas G1 and the second gas G2 may be supplied to the reaction space 125 of the semiconductor processing apparatus. The second gas G2 may include components that react with the thin film on the substrate S to be processed. The second gas G2 may be supplied through the path F of the substrate support plate 103. In addition, the second gas G2 may be supplied to the back surface of the substrate S to be processed, and the second gas G2 may be supplied to the edge region of the substrate S to be processed.

[0083] The first gas G1 may include components different from those of the second gas G2. For example, the first gas G1 may include components that do not react with the thin film on the substrate S to be processed. The first gas G1 may be supplied through the injection hole 133 of the gas supply unit 109. In addition, the first gas G1 may be supplied to the upper surface (i.e., the surface on which the thin film is formed) of the substrate S to be processed. For example, the first gas G1 may be supplied to the central region of the substrate S to be processed. In another example, the first gas G1 may be uniformly supplied over the entire area of the substrate S to be processed.

[0084] As described above, the reaction space 125 may include a first reaction space 125-1 and a second reaction space 125-2. When power is applied, relatively little plasma or no plasma is generated in the first reaction space 125-1 between the interior I and the gas supply unit 109. However, relatively a large amount of plasma may be generated in the second reaction space 125-2 between the peripheral portion P and the gas supply unit 109.

[0085] Therefore, in the second reaction space 125-2 where relatively a large amount of plasma is generated, the reaction between the thin film on the substrate S to be processed and the second gas G2 can be promoted. As a result, a chemical reaction can be performed on the edge region of the substrate S to be processed, and the thin film on the edge region of the substrate S to be processed can be removed.

[0086] The residual gas after removing the film on the edge region is transmitted to the gas flow control device 105 through an exhaust path 117 formed between the reactor wall 101 and the side wall of the gas supply unit 109. The gas transmitted to the gas flow control device 105 can be introduced into the internal space of the gas flow control device 105 through a through hole 111 formed in the side wall 123, and then discharged to the outside through a gas outlet 115.

[0087] In an alternative embodiment, at least a part of the interior I of the substrate support plate 103 can be anodized. Through anodization, an insulating layer 150 can be formed on at least a part of the upper surface of the interior I. For example, the insulating layer 150 can include alumina. Through anodization treatment, the adhesion of the substrate can be achieved by electrostatic force. The unloading of the adhered substrate can be carried out more easily.

[0088] Figure 5 is a cross-sectional view of a semiconductor processing apparatus according to the present disclosure as seen from another cross-section. Refer to Figure 5 , the gas flow control device 105 includes a side wall 123, a gas inlet 113, a plate 301 surrounded by the side wall 123, an RF rod hole 303, a threaded hole 305, a through hole 111, and a groove 127 for accommodating a sealing member such as an O-ring.

[0089] The plate 301 can be surrounded by a protruding side wall 123 and can have a concave shape. A part of the gas flow control device 105 is provided with a gas inlet 113, which is a path for introducing an external reaction gas. At least two threaded holes 305 are provided around the gas inlet 113, and screws as mechanical connection members for connecting the gas flow control device 105 to the gas supply unit 109 pass through the threaded holes 305. Another part of the gas flow control device 105 is provided with an RF rod hole 303, so that an RF rod 313 connected to an external plasma supply unit (not shown) can be mechanically connected to the gas supply unit 109 below the gas flow control device 105.

[0090] The gas supply unit 109 connected to the RF rod 313 can be used as an electrode in CCP processing. In this case, the gas supplied by the gas channel and the gas injection device of the gas supply unit 109 will be activated in the reaction space by the gas supply unit 109 used as an electrode and injected onto the substrate on the substrate support plate 103.

[0091] In some embodiments, the injection holes 133 of the gas supply unit 109 may be distributed over an area smaller than the area of the substrate S to be processed. In another embodiment, the injection holes 133 of the gas supply unit 109 may be distributed over an area smaller than the area of the upper surface of the interior I of the substrate support plate. By arranging the injection holes 133 as described above, denser processing of the edge region of the substrate S to be processed can be achieved. That is, by reducing the area of the supply region of the first gas supplied through the injection holes 133, the dilution amount of the second gas supplied to the back surface of the substrate S through the first gas passage F supplied to the upper surface of the substrate S to be processed can be reduced.

[0092] In some embodiments, the interior I of the substrate support plate 103 may protrude from the peripheral portion P of the substrate support plate 103, and thus the interior I may form a convex portion of the substrate support plate 103. Moreover, in some embodiments, the peripheral portion P of the substrate support plate 103 may form a concave portion of the substrate support plate 103. That is, the portion of the substrate support plate 103 that is surface-sealed with the reactor wall 101 protrudes from the upper surface of the peripheral portion P, thereby forming a concave portion in the peripheral portion P of the substrate support plate 103.

[0093] Figure 6 is a view of a substrate processing apparatus according to an embodiment of the inventive concept. The substrate processing apparatus according to the embodiment may be a variant of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repetitive description of the embodiment will not be given.

[0094] Referring to Figure 6 , the susceptor 3 is disposed on the heating block 4, and the substrate 8 is loaded on the susceptor 3. The susceptor 3 may include a concave portion and a convex portion. The concave portion may be formed in the peripheral portion of the susceptor 3, and the convex portion may be formed in the interior of the susceptor 3. The substrate 8 may be located on the interior, and the interior of the susceptor may support the substrate 8.

[0095] The lower surface of the reactor wall 2 and the susceptor 3 may be surface-sealed at the step 9, and the reaction spaces 12 and 13 may be formed by the surface-sealing. The reaction space may include a first reaction space 12 and a second reaction space 13. The first reaction space 12 may be formed between the interior of the susceptor 3 and the gas supply unit 1. The second reaction space 13 may be formed between the peripheral portion of the susceptor 3, i.e., the edge of the back surface of the substrate 8, and the concave portion of the susceptor 3.

[0096] The first gas is supplied to the first reaction space 12 on the substrate through the first gas inlet 5 of the gas supply unit 1, and the second gas is supplied to the second reaction space 13 below the substrate edge through the second gas inlet 6 and the third gas inlet 7 formed in the susceptor 3. The second gas may include oxygen. For example, by filling the interior of an external chamber (not shown) in which the reactor is installed with oxygen, oxygen can be introduced into the reaction space as a filling gas.

[0097] The second gas inlet 6 may be formed horizontally between the lower portion of the base 3 and the heating block 4, and the third gas inlet 7 may be formed by vertically penetrating the base at a position corresponding to the second reaction space below the edge of the substrate. The second gas inlet 6 and the third gas inlet 7 may communicate with each other.

[0098] The gas in the reaction space is discharged through the exhaust portion 11. Figure 6 An upper exhaust system is shown in FIG. However, it should be noted that the exhaust system is not limited thereto, and a lower exhaust system, a side exhaust system, or a combination thereof may also be applied.

[0099] The edge of the substrate, i.e., the beveled area, is not supported by the base 3 and is exposed on the concave portion of the base 3, i.e., the second reaction space 13. The gas supply unit 1 is connected to the RF generator, and when RF power is supplied to the gas supply unit 1, plasma is generated in the second reaction space 13.

[0100] The gas supply unit 1 has a plurality of through-holes 5 therein, and the first gas can be supplied to the first reaction space 12 through the through-holes 5. The gas supply unit 1 may be, for example, a shower head and may be made of a metal material to serve as an RF electrode. The first gas supplied to the first gas inlet 5 may be nitrogen or argon. The second gas supplied to the second gas inlet 6 and the third gas inlet 7 may be oxygen.

[0101] The substrate 8 is loaded onto the pad 10 on the convex portion of the base 3. According to the prior art, the base has a recessed cavity structure to prevent sliding when loading the substrate and to allow the substrate to be placed in the cavity of the base. However, in the present disclosure, in order to etch the edge of the substrate, the base may have a structure opposite to the cavity structure. That is, the edge portion of the base has a stepped structure, so the rear surface of the edge portion of the substrate is not supported and is exposed to the second reaction space.

[0102] The pad 10 is introduced to prevent the substrate 8 from sliding through the gas cavity between the rear surface of the substrate and the base when the substrate 8 is loaded onto the base 3. That is, by introducing the pad 10, when the substrate 8 is placed on the base 3, the substrate 8 can be prevented from sliding through the gas between the rear surface of the substrate and the base.

[0103] Figure 7 and 8 are views of a substrate support plate according to an embodiment of the present inventive concept. The substrate support plate according to the embodiment may be a modification of the substrate support plate according to the above-described embodiment and the substrate support plate included in the substrate processing apparatus. Hereinafter, a repeated description of the embodiment will not be given.

[0104] Reference Figure 7, the second gas inlet 6 may be a recess formed in a straight line on the rear surface of the base in the horizontal direction. The second gas inlet 6 may form a gas path through which the second gas is supplied together with the upper surface of a heating block (not shown) that supports the base 3. In another example, the second gas inlet 6 may be formed directly through the side surface of the base 3.

[0105] The third gas inlet 7 may vertically penetrate a recess of the base 3 and communicate with the second gas inlet 6 inside the body of the base 3. The second gas may be supplied to the recess of the base 3 through the second gas inlet 6 and the third gas inlet 7. A plurality of the second gas inlets 6 and the third gas inlets 7 may be provided on the base while maintaining a certain interval with respect to the center of the base. For example, 36 second and third gas inlets may be provided on the base at 10-degree intervals. Through the plurality of second gas inlets 6 and the third gas inlets 7, a uniform amount of the second gas can be supplied to the recess.

[0106] The pad 10 may be provided inside the base 3. The pad 10 may support the substrate. As described above, since the substrate is loaded on the pad 10, separation or sliding of the substrate due to gas between the rear surface of the substrate and the upper surface of the base 3 can be prevented. A plurality of pads 10 may be provided at regular intervals based on the center of the base. For example, according to some embodiments, 10 pads 10 may be provided at 36-degree intervals. In some examples, the thickness of the pad 10 may be about 0.5 mm.

[0107] In Figure 8 the structure of the base 3 is shown in more detail. Figure 8 (a) shows the upper surface of the base, Figure 8 (c) is a cross-sectional view taken along lines C-C and D-D of Figure 8 (a). The cross-sectional view along line D-D shows that the second gas inlet and the third gas inlet are formed in the body of the base. Figure 8 (b) shows the lower surface of the base and shows a plurality of recesses, i.e., second gas inlets formed at regular intervals from the edge of the base toward the center of the lower surface.

[0108] Figure 9 A substrate processing apparatus according to an embodiment is schematically shown. The substrate processing equipment according to an embodiment may be a variant of the substrate processing equipment according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0109] Next, referring to Figure 9 , selective etching may be performed in the edge region of the substrate, particularly in the bevel region.

[0110] As Figure 9 shown, different plasma generation regions are realized according to the reactor structure.Figure 9 (a) shows that plasma 200 is generated over the entire reaction space on a substrate. However, Figure 9 (b) shows that plasma 200' is generated only in the edge region of the substrate, particularly in the bevel region. This difference may be due to the distance between the substrate and the electrode, particularly the distance between the susceptor and the upper electrode (e.g., gas supply unit 210).

[0111] According to Paschen's law, plasma generation depends on the pressure and distance in the reaction space. That is, when the pressure in the reaction space is constant, in a short-distance reaction space, the mean free path of gas molecules is short, so the possibility of collision between gas molecules is low and ionization is difficult. In addition, due to the short acceleration distance, discharge is difficult, so almost no plasma is generated. Generally, when the distance of the reaction space is less than 1 mm, it is difficult to generate plasma.

[0112] In Figure 9 (a), the distance of the reaction space between the substrate S and the electrode 210 can be 1 mm or more. In this case, when gas is supplied to the reaction space through a gas supply unit (i.e., showerhead electrode 210) and RF power is supplied, plasma 200 can be generated in the reaction space on the substrate.

[0113] In Figure 9 (b), the distance of the reaction space on the substrate S, i.e., the first reaction space, from the inside of the susceptor can be 1 mm or less. As a result, it is difficult to generate plasma in the first reaction space, even when gas and RF power are supplied. However, in the second reaction space having a bevel region (which is the edge region of the substrate), since the susceptor is recessed, the distance between the electrodes 210 and 220 can be 1 mm or more, so that plasma 200' can be generated in the second reaction space. Therefore, this reactor structure allows etching and deposition in the bevel region of the substrate.

[0114] Embodiments according to the inventive concept use this principle, and by introducing a recessed structure, the distance of the reaction space from the inside of the susceptor, e.g., the distance between the substrate and the electrode, is within about 1 mm, and the distance of the reaction space from the bevel region of the substrate, i.e., the peripheral portion of the susceptor, is 1 mm or more, so that plasma generation can be easily achieved in the bevel region of the substrate.

[0115] Figure 10 is a view of a substrate processing apparatus according to an embodiment of the inventive concept. The substrate processing apparatus according to the embodiment may be a variant of the substrate processing apparatus according to the above embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0116] Referring to Figure 10, in the beveled area of the substrate, the film deposited on the substrate can be removed. For example, a carbon film can be deposited on the substrate 8. Argon or nitrogen as the first gas can be supplied to the first reaction space 12 through the first gas inlet 5 of the gas supply unit 1. Oxygen as the second gas can be supplied to the second reaction space 13 through the second gas inlet 6 and the third gas inlet 7 of the susceptor 3.

[0117] According to one example, the first distance d of the first reaction space 12 can be 1 mm or less. Additionally, the second distance D of the second reaction space 13 can be 3 mm or more. When RF power is supplied to the gas supply unit 1, due to the short first distance d, no plasma is generated in the first reaction space 12, but plasma can be generated in the second reaction space 13. In particular, when the oxygen supplied through the second and third gas inlets is ionized, oxygen plasma can be generated. In this case, oxygen radicals and the carbon thin film in the beveled area of the substrate can react to remove the carbon thin film in the beveled area of the substrate.

[0118] According to one of the technical features of the present disclosure, regardless of where the substrate is located within the length L of the second reaction space L, a beveled etch area of the same width can be ensured on the substrate. That is, regardless of the alignment position of the substrate 8 on the susceptor 3, symmetric beveled etching of the same width can be performed on the substrate.

[0119] More specifically, as long as the edge area of the substrate is within the area of the length L of the second reaction space, symmetric beveled etching can be achieved by adjusting the magnitude of the RF power or the flow rate ratio of the first gas and the second gas flowing therein. Since the lower surface of the gas supply unit 1, i.e., the surface facing the substrate, is flat without curvature, and the first distance d between the upper surface of the substrate 8 and the lower surface of the gas supply unit 10 is constant, no plasma is generated on the upper surface of the substrate, and by adjusting the magnitude of the RF power and the flow rate ratio of the gas, symmetric beveled etching can be achieved with respect to the side surface and the lower surface of the substrate.

[0120] Figure 11 It shows the removal of the carbon thin film through the reaction of oxygen radicals with the carbon thin film. In Figure 11 , the carbon component of the carbon thin film can be converted into CO 2 gas and removed through reaction with oxygen radicals. As Figure 11 shown, it can be seen that by implementing reaction spaces of different widths, the thin film in the beveled area of the substrate is selectively removed. According to another embodiment, as described above, the removal of the thin film in the beveled area of the substrate can be controlled according to the conditions of the applied RF power, so that without performing an alignment operation on the substrate, selective removal of the thin film in the beveled area of the substrate can be achieved.

[0121] Figure 12Shows the area where the carbon film is removed from the upper edge of the substrate according to the RF power application time. Under the conditions of a heating block at 300 °C, an RF power of 800 W, 500 sccm of Ar (first gas), 1500 sccm of O 2 (second gas), and a pressure of 3 Torr in the reactor, the experimental results in Figure 12 are obtained.

[0122] As Figure 12 shown, in this experiment, it can be seen that when the RF power is applied for 60 seconds, 23% of the carbon film is removed inside the substrate 1 mm away from the substrate edge, 10% of the carbon film is removed in the part 2 mm away from the substrate edge, and 3% of the carbon film is removed in the part 3 mm away from the substrate edge.

[0123] In addition, in this experiment, it can be seen that when the RF power is applied for 120 seconds, 44% of the carbon film is removed inside the substrate 1 mm away from the substrate edge, 26% of the carbon film is removed in the part 2 mm away, and 9% of the carbon film is removed in the part 3 mm away.

[0124] In addition, in this experiment, it can be seen that when the RF power is applied for 180 seconds, 93% of the carbon film is removed inside the substrate 1 mm away from the substrate edge, 51% of the carbon film is removed in the part 2 mm away from the substrate edge, and 27% of the carbon film is removed in the part 3 mm away from the substrate edge. In Figure 13 the removal of the carbon film by position is shown in more detail.

[0125] In Figures 12 to 13 , oxygen is supplied to remove the carbon film, but the inventive concept is not limited thereto. For example, SiO 2 , SiN, Poly-Si, and metal films can be deposited on the substrate. In this case, as the second gas including a material that reacts with the film, a gas including F, such as an etching gas, such as F 2 , NF 3 , ClF 3 , and Cl 2 can be used.

[0126] Figure 14 Shows the removal of the carbon film 1 mm from the edge of the upper surface of the actual substrate, which is carried out under the above processing conditions at an RF power application time of 180 seconds in Figure 12 .

[0127] As Figure 14 shown, 90% or more of the carbon film is removed 1 mm from the edge of the substrate, and the amount of the removed film gradually decreases towards the inside of the substrate.

[0128] In Figures 12 to 14controls the RF power application time, but the same effect can be achieved by controlling the pressure ratio between the first reaction space and the second reaction space. That is, by controlling the supply ratio of the first gas and the second gas, selective film removal in the bevel region can be achieved.

[0129] For example, in Figures 12 to 14 , Ar as the first gas and O 2 are supplied at a ratio of 1:3 (i.e., 500 sccm: 1500 sccm). However, in an alternative embodiment, the supply flow rate of the first gas can be reduced to extend the supply region of oxygen radicals at the edge of the upper surface of the substrate, and in this case, the region for removing the carbon film can be enlarged.

[0130] In addition, according to other embodiments, the same effect can be achieved by changing the reactor structure (see Figure 15 ). Referring to Figure 15 , which schematically shows a substrate processing apparatus according to an embodiment of the inventive concept, a step is introduced at the edge portion of the gas supply unit 1 to increase the reaction space distance d2 of the corresponding region. Since the reaction space distance d2 is increased, a larger amount of plasma can be generated, and the region for removing the film in the upper edge portion of the substrate can be controlled.

[0131] In Figure 15 's embodiment, the width of the bevel etching region at the edge of the substrate is determined according to the width of the step region L' formed at the edge of the gas supply unit 1. Therefore, different from Figure 10 , for the symmetry of the bevel etching width, the alignment of the substrate on the susceptor 4 will be an important processing variable. That is, when plasma is generated at the edge of the substrate by providing a stepped structure at the edge of the gas supply unit to perform the bevel etching function, since the distance between the lower surface of the gas supply unit and the upper surface of the substrate is not constant (e.g., d1≠d2), the alignment of the substrate on the susceptor is important for ensuring a constant etching width.

[0132] As described above with reference to Figures 12 to 14 , by adjusting the magnitude of the RF power supplied to the reaction space and the flow rate ratio between the incoming gases regardless of the alignment of the substrate on the susceptor, a bevel removal region with a uniform width can be obtained at the edge of the substrate.

[0133] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for purposes of limitation. The description of features or aspects within each embodiment is generally to be considered available for other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those of ordinary skill in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the invention as defined by the following claims.

Claims

1. A substrate processing apparatus, comprising: a substrate support plate including an interior portion, an upper surface area of which is smaller than an area of a substrate to be processed; and a peripheral portion surrounding the interior portion, wherein an upper surface of the peripheral portion is below an upper surface of the interior portion; and a gas supply unit on the substrate support plate, the gas supply unit including an electrode surface directly facing the substrate support plate, and RF power being applied to the electrode surface, wherein a first distance between the interior portion and the gas supply unit is smaller than a second distance between the peripheral portion and the gas supply unit, wherein the peripheral portion includes at least one path, and a part of the at least one path extends perpendicularly from the peripheral portion toward an upper surface of the substrate support plate with respect to the upper surface of the substrate support plate; wherein the gas supply unit supplies at least a first gas, and the first gas is ionized by a potential difference between the electrode surface and the substrate support plate from a center lower surface to an edge lower surface of the gas supply unit; wherein generation of radicals of the first gas from the gas supply unit at a center lower surface of the gas supply unit is suppressed due to a potential difference within the first distance between the gas supply unit and the substrate, while radicals of the first gas from the gas supply unit are generated by an electrode surface at an edge lower surface of the gas supply unit due to a potential difference within a second distance between the gas supply unit and the peripheral portion of the substrate support plate, wherein the second distance is greater than the first distance; Wherein, the at least one path is in fluid communication with an external chamber to provide a second gas, the second gas comprising at least one of F 2 , NF 3 , ClF 3 , and Cl 2 ; wherein during generation of radicals of the gas, a second gas is supplied to a lower edge of the substrate and the substrate support plate through the at least one path; and wherein a magnitude of RF power and a flow rate ratio of the first gas to the second gas are adjusted to achieve symmetric angled etching.

2. The substrate processing apparatus according to claim 1, wherein when the substrate to be processed is mounted on the interior portion, the first distance between the substrate to be processed and the gas supply unit is about 1 mm or less, and the second distance between the peripheral portion and the gas supply unit is about 3 mm or more.

3. The substrate processing apparatus according to claim 1, wherein the interior portion forms a convex portion of the substrate support plate, and the peripheral portion forms a concave portion of the substrate support plate.

4. The substrate processing apparatus according to claim 1, wherein the gas supply unit includes a plurality of injection holes distributed over an area smaller than an area of the substrate to be processed.

5. The substrate processing apparatus according to claim 4, wherein the plurality of injection holes are distributed over an area smaller than an upper surface area of the interior portion.

6. The substrate processing apparatus according to claim 1, wherein the gas supply unit includes a plurality of injection holes, and a first lower surface of the gas supply unit in a region where the plurality of injection holes are distributed is flush with a second lower surface of the gas supply unit outside a region where the plurality of injection holes are distributed.

7. The substrate processing apparatus according to claim 6, wherein The distance between the upper surface of the substrate to be processed and the first lower surface of the gas supply unit, and the distance between the upper surface of the substrate to be processed and the second lower surface of the gas supply unit are constant. Therefore, without a separate alignment operation, a film provided on the edge region of the substrate to be processed between the peripheral portion and the gas supply unit is processed.

8. The substrate processing apparatus according to claim 1, wherein, a reaction space is formed between the substrate support plate and the gas supply unit, and the reaction space includes: a first reaction space between the interior and the gas supply unit; and a second reaction space between the peripheral portion and the gas supply unit.

9. A substrate processing method, comprising: mounting a substrate to be processed on a substrate support plate of the substrate processing apparatus according to claim 8; generating plasma by supplying RF power between the gas supply unit and the substrate support plate on the substrate support plate; using the plasma to remove at least a portion of the film on the edge region of the substrate to be processed; and adjusting the magnitude of the RF power and the flow rate ratio of the first gas to the second gas, wherein, during the generation of the plasma, less plasma is generated in the first space between the interior and the gas supply unit than in the second space between the peripheral portion and the gas supply unit.

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