Chip-level packaging structure and packaging method of terahertz low-temperature amplification circuit

Abstract

The present invention provides a chip-level packaging structure for a terahertz cryogenic amplification circuit and a packaging method thereof. The chip-level packaging structure includes: a packaging lower housing, a PCB circuit board having a through opening, a terahertz quantum well detector, a transimpedance amplifier, a power supply connector, and an output connector. The PCB circuit board is disposed inside the packaging lower housing. The terahertz quantum well detector is disposed inside the packaging lower housing through the through opening. The transimpedance amplifier is disposed on the PCB circuit board. One ends of the power supply connector and the output connector are both disposed on the PCB circuit board, and the other ends are both disposed outside the packaging lower housing. Through the chip-level packaging structure for a terahertz cryogenic amplification circuit and the packaging method thereof provided by the present invention, many problems existing in the existing terahertz cryogenic amplification circuit are solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of terahertz detection, and particularly relates to a chip-level packaging structure and a packaging method for a terahertz low-temperature amplification circuit. Background Art

[0002] A terahertz quantum well detector is a unipolar device based on intersubband transitions. This device utilizes the principle that electrons in the ground state in a doped quantum well of a semiconductor superlattice (GaAs / AlGaAs) absorb terahertz light and then transition to a quasi-continuous state to generate photocurrent for detection. This device has a relatively high response rate and is very suitable for high-frequency and high-speed detection applications. However, due to the low photon energy in the terahertz band, the energy difference between the energy levels of intersubband transitions during the operation of the detector is very small, much smaller than the noise level at room temperature. To suppress the above noise and improve the signal-to-noise ratio of the detector, the quantum well detector in the terahertz band must operate in an extremely low-temperature environment in the range of 4 - 10K.

[0003] In order to amplify the detection signal of the terahertz quantum well detector, low-temperature amplification technology is often required. The usual method is to connect the signal of the terahertz quantum well detector from the low-temperature environment to the normal-temperature environment through a coaxial signal line, and then amplify it through a low-noise amplifier. This amplification technology sacrifices the high bandwidth of the terahertz quantum well detector, cannot meet the requirements of fast detection, and the signal experiences a temperature gradient change before the first-stage amplification, which will introduce more noise. At the same time, due to the volume problem of the normal-temperature low-noise amplifier, it is often impossible to achieve a very high integration level, thus restricting the use range of this high-speed detector and reducing its application advantages. Summary of the Invention

[0004] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a chip-level packaging structure and a packaging method for a terahertz low-temperature amplification circuit, which are used to solve many problems existing in the existing terahertz low-temperature amplification circuit.

[0005] To achieve the above purpose and other related purposes, the present invention provides a chip-level packaging structure for a terahertz low-temperature amplification circuit, and the chip-level packaging structure includes: a packaging lower housing, a PCB circuit board with a through opening, a terahertz quantum well detector, a transimpedance amplifier, a power supply connector, and an output connector.

[0006] The PCB circuit board is arranged in the packaging lower housing, the terahertz quantum well detector is arranged in the packaging lower housing through the through opening, the transimpedance amplifier is arranged on the PCB circuit board, and one ends of the power supply connector and the output connector are both arranged on the PCB circuit board, and the other ends are both arranged outside the packaging lower housing.

[0007] Wherein, the power supply connector is used to externally connect a power supply device to supply power to the terahertz quantum well detector and the transimpedance amplifier. The terahertz quantum well detector is used to collect terahertz optical signals and convert the collected terahertz optical signals into current signals for output. The transimpedance amplifier is used to amplify the received current signal and convert it into a voltage signal for output. The output connector is used to output the voltage signal outside the chip-level packaging structure.

[0008] Optionally, the package lower housing includes: a bottom plate, side plates of the lower housing, a through-hole for the power supply connector, and a lower through-hole for the output connector. The side plates of the lower housing are provided around the bottom plate and extend vertically upward along the bottom plate. The through-hole for the power supply connector is provided on one of the side plates of the lower housing. The lower through-hole for the output connector is provided on two side plates of the lower housing adjacent to the side plate of the lower housing where the through-hole for the power supply connector is located.

[0009] Optionally, the chip-level packaging structure further includes: a package upper housing. The package upper housing includes: a top plate, side plates of the upper housing, a terahertz light incident port, and an upper through-hole for the output connector. The side plates of the upper housing are provided around the top plate and extend vertically downward along the top plate. The terahertz light incident port is provided on the top plate and corresponds to the position where the terahertz quantum well detector is located. The upper through-hole for the output connector is provided on two side plates of the upper housing and corresponds to the position where the lower through-hole for the output connector is located; wherein, the lower through-hole for the output connector and the upper through-hole for the output connector together form an output connector through-hole.

[0010] Optionally, the power supply connector adopts a pin-type signal connector, and the output connector adopts a double-ear radio frequency signal connector.

[0011] Optionally, the operating temperature of the chip-level packaging structure is not less than 4K. Among them, the substrate material of the transimpedance amplifier is selected from one of germanium silicon, gallium arsenide, or gallium nitride.

[0012] Optionally, the terahertz quantum well detector is a photoconductive terahertz quantum well detector, and its operating frequency is 2THz - 7THz.

[0013] Optionally, the bandwidth of the transimpedance amplifier is 20KHz - 5GHz.

[0014] The present invention also provides a packaging method for a chip-level packaging structure of a terahertz low-temperature amplification circuit as described above. The packaging method includes:

[0015] 1) Provide a package lower housing, a PCB circuit board with a through-opening, a terahertz quantum well detector, a transimpedance amplifier, a power supply connector, and an output connector;

[0016] 2) Place the PCB circuit board inside the lower encapsulation housing. The terahertz quantum well detector is disposed inside the lower encapsulation housing through the through-opening. The transimpedance amplifier is disposed on the PCB circuit board. One end of each of the power supply connector and the output connector is disposed on the PCB circuit board, and the other end of each is disposed outside the lower encapsulation housing.

[0017] Optionally, the encapsulation method further includes: 3) Provide an upper encapsulation housing and snap the upper encapsulation housing onto the lower encapsulation housing.

[0018] Optionally, the terahertz quantum well detector is disposed inside the lower encapsulation housing by indium soldering, and the transimpedance amplifier is disposed on the PCB circuit board by indium soldering.

[0019] As described above, a chip-level encapsulation structure and an encapsulation method for a terahertz low-temperature amplification circuit according to the present invention can perform the first-stage amplification on the current signal output by the terahertz quantum well detector completely in a low-temperature environment, thereby reducing the large electronic thermal noise generated by the coaxial cable due to the temperature gradient and the high-temperature environment. Therefore, it has a lower noise level and a higher signal-to-noise ratio. At the same time, it has a relatively high detection bandwidth, can meet the detection requirements of time-resolved spectroscopy, and has a high integration degree and a small volume. When the present invention is applied to terahertz imaging, spectral detection, etc., it has a higher time resolution and a higher signal-to-noise ratio, and is also more convenient and stable during use. Description of the Drawings

[0020] Figure 1 Shows a schematic structural diagram of the chip-level encapsulation structure of the present invention.

[0021] Figure 2 Shows a schematic structural diagram of the PCB circuit board in the chip-level encapsulation structure of the present invention.

[0022] Figure 3 Shows a schematic structural diagram of the chip-level encapsulation structure of the present invention after encapsulating the lower encapsulation housing, the PCB circuit board, the terahertz quantum well detector, the transimpedance amplifier, the power supply connector and the output connector.

[0023] Figure 4 Shows a schematic structural diagram of the chip-level encapsulation structure of the present invention after encapsulating the upper encapsulation housing, the lower encapsulation housing, the PCB circuit board, the terahertz quantum well detector, the transimpedance amplifier, the power supply connector and the output connector.

[0024] Figure 5 Shows a time-domain waveform diagram of the electrical signal output by the chip-level encapsulation structure of the present invention at a temperature of 8.17K.

[0025] Figure 6It shows the passband characteristics of the chip-level packaging structure of the present invention at temperatures of 8.17 K and 300 K.

[0026] Component Label Explanation

[0027] 10 Chip-level packaging structure

[0028] 100 Packaging lower housing

[0029] 101 Base plate

[0030] 102 Lower housing side plate

[0031] 103 Power supply connector through-hole

[0032] 104 Output connector lower through-hole

[0033] 200 PCB circuit board

[0034] 201 Substrate

[0035] 202 Through-opening

[0036] 203 Power supply connector pad

[0037] 2031 Grounding solder joint

[0038] 2032 Transimpedance amplifier power supply solder joint

[0039] 2033 Terahertz quantum well detector power supply solder joint

[0040] 2034 Operating state monitoring solder joint

[0041] 204 Output connector pad

[0042] 2041 First output solder joint

[0043] 2042 Grounding solder joint

[0044] 2043 Second output solder joint

[0045] 2044 Grounding solder joint

[0046] 205a - 205e Bonding points

[0047] 300 Terahertz quantum well detector

[0048] 400 Transimpedance amplifier

[0049] 500 Power supply connector

[0050] 600 Output connector

[0051] 601 Connector body

[0052] 602 Connector Pin

[0053] 700 Upper Package Housing

[0054] 701 Top Plate

[0055] 702 Side Plate of Upper Housing

[0056] 703 Terahertz Light Incident Port

[0057] 704 Upper Through Hole of Output Connector Detailed Implementation Manner

[0058] The following describes the implementation manners of the present invention through specific examples. Those skilled in the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0059] Please refer to Figures 1 to 6 . It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Although only the components related to the present invention are shown in the diagrams and are not drawn according to the number, shape, and size of the components in actual implementation, the form, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout form may also be more complex.

[0060] As Figure 1 shown, this embodiment provides a chip-level packaging structure for a terahertz low-temperature amplification circuit. The chip-level packaging structure 10 includes: a lower package housing 100, a PCB circuit board 200 having a through opening 202, a terahertz quantum well detector 300, a transimpedance amplifier 400, a power supply connector 500, and an output connector 600.

[0061] The PCB circuit board 200 is disposed inside the lower package housing 100. The terahertz quantum well detector 300 is disposed inside the lower package housing 100 through the through opening 202. The transimpedance amplifier 400 is disposed on the PCB circuit board 200. One ends of the power supply connector 500 and the output connector 600 are both disposed on the PCB circuit board 200, and the other ends are both disposed outside the lower package housing 100.

[0062] Among them, the power supply connector 500 is used to externally connect a power supply device to supply power to the terahertz quantum well detector 300 and the transimpedance amplifier 400. The terahertz quantum well detector 300 is used to collect terahertz optical signals and convert the collected terahertz optical signals into current signals for output. The transimpedance amplifier 400 is used to amplify the received current signal and convert it into a voltage signal for output. The output connector 600 is used to output the voltage signal outside the chip-level packaging structure.

[0063] Specifically, as Figure 1 shown, the encapsulation lower housing 100 includes: a bottom plate 101, a lower housing side plate 102, a power supply connector through-hole 103, and an output connector lower through-hole 104. The lower housing side plate 102 is disposed around the bottom plate 101 and extends vertically upward along the bottom plate 101. The power supply connector through-hole 103 is disposed on one of the lower housing side plates 102. The output connector lower through-hole 104 is disposed on two of the lower housing side plates 102 adjacent to the lower housing side plate 102 where the power supply connector through-hole 103 is located. In order to protect the PCB circuit board 200, the terahertz quantum well detector 300, the transimpedance amplifier 400, the power supply connector 500, and the output connector 600 from being collided, the chip-level packaging structure 10 further includes: a packaging upper housing 700; as Figure 1As shown, the encapsulation upper housing 700 includes: a top plate 701, upper housing side plates 702, a terahertz light incident port 703, and an upper through-hole 704 for the output connector. The upper housing side plates 702 are provided around the top plate 701 and extend vertically downward along the top plate 701. The terahertz light incident port 703 is provided on the top plate 701 and corresponds to the position of the terahertz quantum well detector 300. The upper through-hole 704 for the output connector is provided on the two upper housing side plates 702 and corresponds to the position of the lower through-hole 104 for the output connector. Among them, the lower through-hole 104 for the output connector and the upper through-hole 704 for the output connector together form an output connector through-hole. More specifically, both the encapsulation lower housing 100 and the encapsulation upper housing 700 are processed and manufactured by a milling machine process, and their materials are both oxygen-free copper. It should be noted that during the specific manufacturing process, the shape and size of the power supply connector through-hole 103 are set according to the shape and size of the power supply connector 500, and the position of the power supply connector through-hole 103 is set according to the position of the power supply connector pad on the PCB circuit board 200; the shape and size of the lower through-hole 104 for the output connector and the upper through-hole 704 for the output connector are set according to the shape and size of the output connector 600, and the position of the lower through-hole 104 for the output connector and the upper through-hole 704 for the output connector are set according to the position of the output connector pad on the PCB circuit board 200; the position of the terahertz light incident port 703 corresponds to the position of the through-opening 202 and is set according to the position of the terahertz quantum well detector 300, and the size of the terahertz light incident port 703 needs to ensure that the terahertz quantum well detector 300 can receive terahertz light signals without being affected.

[0064] Specifically, as Figure 2As shown, the PCB circuit board 200 includes: a substrate 201, a through opening 202, a power supply connector pad 203, an output connector pad 204, and a plurality of bonding points 205a - 205e. The power supply connector pad 203 is provided at one end of the substrate 201, the output connector pad 204 is provided at the other end of the substrate 201, the through opening 202 is provided on the substrate 201 and between the power supply connector pad 203 and the output connector pad 204, and the bonding points 205a - 205e are connected to the corresponding solder joints in each pad through microstrip lines. The power supply connector pad 203 includes four solder joints, namely a ground solder joint 2031, a transimpedance amplifier power supply solder joint 2032, a terahertz quantum well detector power supply solder joint 2033, and a working state monitoring solder joint 2034. Among them, the transimpedance amplifier power supply solder joint 2032 is connected to the bonding point 205a through a microstrip line, the terahertz quantum well detector power supply solder joint 2033 is connected to the bonding point 205b through a microstrip line, and the working state monitoring solder joint 2034 is connected to the bonding point 205c through a microstrip line. The output connector pad 204 includes four solder joints, namely two ground solder joints 2042, 2044, a first output solder joint 2041, and a second output solder joint 2043. Among them, the first output solder joint 2041 is connected to the bonding point 205d through a microstrip line, and the second output solder joint 2043 is connected to the bonding point 205e through a microstrip line. In practical applications, a gold wire bonding method is used to connect between the bonding point 205a and the transimpedance amplifier 400, between the bonding point 205b and the terahertz quantum well detector 300, between the bonding point 205c and the terahertz quantum well detector 300 or the transimpedance amplifier 400, between the terahertz quantum well detector 300 and the transimpedance amplifier 400, between the transimpedance amplifier 400 and the bonding point 205d, and between the transimpedance amplifier 400 and the bonding point 205e to achieve signal transmission. More specifically, the material of the substrate 201 is FR4, aluminum nitride, 4350B, etc. Optionally, in this example, the substrate 201 uses 4350B with a thickness of 0.8 mm to ensure high-frequency performance. It should be noted that during the specific manufacturing process, the layout of the positions of the pads in the PCB circuit board 200 can be designed to achieve low parasitic parameters, thereby ensuring the optimal transmission of high-frequency detection signals. The width and thickness of the microstrip lines in the PCB circuit board 200 can also be designed to further ensure the optimal transmission of high-frequency detection signals. The microstrip lines between the first output solder joint 2041 and the bonding point 205d and between the second output solder joint 2043 and the bonding point 205e can also be designed to make the impedance between the PCB circuit board 200 and the output connector 600 match 50 ohms, thereby achieving lossless output of voltage signals.

[0065] Specifically, the terahertz quantum well detector 300 is a photoconductive terahertz quantum well detector, and its operating frequency is 2 THz - 7 THz. Optionally, in this example, the peak response frequency of the terahertz quantum well detector 300 is 4.2 THz.

[0066] Specifically, since the operating temperature of the chip-level packaging structure 10 is not less than 4 K, that is, the operating temperature of the transimpedance amplifier 400 is not less than 4 K, the substrate material of the transimpedance amplifier 400 is selected from one of germanium-silicon, gallium arsenide or gallium nitride to ensure that the performance of the transimpedance amplifier 400 does not change or changes little in a low-temperature environment, so as not to affect its normal operation. The bandwidth of the transimpedance amplifier 400 is 20 KHz - 5 GHz to ensure that the low-temperature amplifier circuit of the chip-level packaging structure in this example has a high bandwidth. More specifically, the transimpedance amplifier 400 selects a commercial chip of model GN1068 or UX2066; optionally, in this example, the transimpedance amplifier 400 selects a commercial chip of model GN1068.

[0067] Specifically, the power supply connector 500 adopts a pin-type signal connector. Of course, other connectors that can achieve power supply signal transmission are also applicable to this example. More specifically, 4Pin pin holes with a pitch of 2.54 mm or 1.27 mm are used as the pin-type signal connector, where the number of pin holes can be reduced or increased according to actual needs; optionally, in this example, 4Pin pin holes with a pitch of 2.54 mm are used as the pin-type signal connector.

[0068] Specifically, the output connector 600 adopts a double-ear radio frequency signal connector; among them, the double-ear radio frequency signal connector is manufactured by an open-mold processing method, and its material is brass. More specifically, the double-ear radio frequency signal connector uses the SMA or SMB standard; optionally, in this example, the double-ear radio frequency signal connector adopts an SMA-standard external-thread internal-hole radio frequency connector, and its specific structure is as Figure 1 shown, including: a connector body 601 and connector pins 602. Among them, the connector body 601 has an external thread and an internal hole, and the connector pins 602 are arranged in the internal hole of the connector body 601, so as to realize connection with an external high-frequency line (coaxial cable) to output a voltage signal outside the chip-level packaging structure.

[0069] Correspondingly, this embodiment also provides a packaging method for the chip-level packaging structure as described above. The packaging method includes:

[0070] 1) Provide a packaging lower shell 100, a PCB circuit board 200 with a through opening 202, a terahertz quantum well detector 300, a transimpedance amplifier 400, a power supply connector 500 and an output connector 600;

[0071] 2) Place the PCB circuit board 200 inside the lower encapsulation housing 100. The terahertz quantum well detector 300 is disposed inside the lower encapsulation housing 100 through the through-opening 202. The transimpedance amplifier 400 is disposed on the PCB circuit board 200. One end of each of the power supply connector 500 and the output connector 600 is disposed on the PCB circuit board 200, and the other end of each is disposed outside the lower encapsulation housing 100 (specifically as Figure 3 shown).

[0072] Specifically, the PCB circuit board 200 is disposed inside the lower encapsulation housing 100 by indium soldering. The terahertz quantum well detector 300 is disposed inside the lower encapsulation housing 100 by indium soldering. The transimpedance amplifier 400 is disposed on the PCB circuit board 200 by indium soldering. The power supply connector 500 is disposed on the PCB circuit board 200 by tin soldering. The output connector 600 is disposed on the PCB circuit board 200 by tin soldering. The power supply connector 500 is connected to the transimpedance amplifier 400 by gold wire bonding based on the bonding point 205a. The power supply connector 500 is connected to the terahertz quantum well detector 300 by gold wire bonding based on the bonding point 205b. The power supply connector 500 is connected to the terahertz quantum well detector 300 or the transimpedance amplifier 400 by gold wire bonding based on the bonding point 205c. The terahertz quantum well detector 300 and the transimpedance amplifier 400 are connected by gold wire bonding. The output connector 600 is connected to the transimpedance amplifier 400 by gold wire bonding based on the bonding point 205d. The output connector 600 is connected to the transimpedance amplifier 400 by gold wire bonding based on the bonding point 205e, thereby realizing signal transmission. More specifically, the output connector 600 is further fixed to the lower encapsulation housing 100 by screws.

[0073] Specifically, the encapsulation method further includes: 3) Provide an upper encapsulation housing 700, and snap the upper encapsulation housing 700 onto the lower encapsulation housing 100 to protect the PCB circuit board 200, the terahertz quantum well detector 300, the transimpedance amplifier 400, the power supply connector 500, and the output connector 600 from being collided (specifically as Figure 4 shown).

[0074] Please refer to Figure 5 and 6 below to describe the performance of the chip-level encapsulation structure of the terahertz low-temperature amplification circuit according to this embodiment.

[0075] At a temperature of 8.17 K, a 4.3 THz quantum cascade laser driven by a pulsed current source is used as the signal light source. A 2635B low-noise power supply is used to power the chip-level packaging structure described in this embodiment. An HDO6034 oscilloscope is used to monitor the electrical signal output therefrom. The time-domain waveform of the electrical signal is as Figure 5 shown. It can be seen that the chip-level packaging structure described in this embodiment can effectively detect terahertz optical signals.

[0076] At temperatures of 8.17 K and 300 K, a radio frequency signal source is used to perform microwave injection on the chip-level packaging structure described in this embodiment to measure its passband characteristics. The bandwidth results are as Figure 6 shown. It can be seen that the chip-level packaging structure described in this embodiment has a relatively large bandwidth.

[0077] In summary, for the chip-level packaging structure and its packaging method of a terahertz low-temperature amplification circuit of the present invention, the present invention can completely perform the first-stage amplification on the current signal output by the terahertz quantum well detector in a low-temperature environment, thereby reducing the large electronic thermal noise generated by the coaxial cable due to the temperature gradient and high-temperature environment. Therefore, it has a lower noise level and a higher signal-to-noise ratio. At the same time, it has a relatively high detection bandwidth, can meet the detection requirements of time-resolved spectroscopy, and has a high degree of integration and a small volume. When the present invention is used in applications such as terahertz imaging and spectroscopic detection, it has a higher time resolution and a higher signal-to-noise ratio, and is also more convenient and stable during use. Therefore, the present invention effectively overcomes various disadvantages in the prior art and has high industrial utilization value.

[0078] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A chip-level packaging structure for a terahertz cryogenic amplification circuit, characterized in that, The operating temperature of the chip-level packaging structure is greater than or equal to 4K and less than or equal to 10K, and it includes: a packaging lower housing, a PCB circuit board with a through opening, a terahertz quantum well detector, a transimpedance amplifier, a power supply connector, and an output connector. The PCB circuit board is disposed in the packaging lower housing by indium soldering. The terahertz quantum well detector is disposed in the packaging lower housing by indium soldering through the through opening. The transimpedance amplifier is disposed on the PCB circuit board by indium soldering. One ends of the power supply connector and the output connector are both disposed on the PCB circuit board, and the other ends are both disposed outside the packaging lower housing. Among them, the power supply connector is used to externally connect a power supply device to supply power to the terahertz quantum well detector and the transimpedance amplifier. The terahertz quantum well detector is used to collect terahertz optical signals and convert the collected terahertz optical signals into current signals for output. The transimpedance amplifier is used to amplify the received current signal and convert it into a voltage signal for output. The output connector is used to output the voltage signal outside the chip-level packaging structure.

2. The chip-level packaging structure of the terahertz low-temperature amplification circuit according to claim 1, characterized in that The packaging lower housing includes: a bottom plate, a lower housing side plate, a power supply connector through opening, and an output connector lower through opening. The lower housing side plate is disposed around the bottom plate and extends vertically upward along the bottom plate. The power supply connector through opening is disposed on one of the lower housing side plates. The output connector lower through opening is disposed on two of the lower housing side plates adjacent to the lower housing side plate where the power supply connector through opening is located.

3. The chip-level packaging structure of the terahertz low-temperature amplification circuit according to claim 2, characterized in that, The chip-level packaging structure further includes: a packaging upper housing. The packaging upper housing includes: a top plate, an upper housing side plate, a terahertz light incident port, and an output connector upper through opening. The upper housing side plate is disposed around the top plate and extends vertically downward along the top plate. The terahertz light incident port is disposed on the top plate and corresponds to the position where the terahertz quantum well detector is located. The output connector upper through opening is disposed on two of the upper housing side plates and corresponds to the position where the output connector lower through opening is located. Among them, the output connector lower through opening and the output connector upper through opening together form an output connector through opening.

4. The chip-level packaging structure of the terahertz low-temperature amplification circuit according to claim 1, characterized in that, The power supply connector uses a pin-type signal connector, and the output connector uses a double-ear radio frequency signal connector.

5. The chip-level packaging structure of the terahertz low-temperature amplification circuit according to claim 1, characterized in that, The substrate material of the transimpedance amplifier is selected from one of germanium silicon, gallium arsenide, or gallium nitride.

6. The chip-level packaging structure of the terahertz low-temperature amplification circuit according to claim 1, characterized in that The terahertz quantum well detector is a photoconductive terahertz quantum well detector, and its operating frequency is 2THz - 7THz.

7. The chip-level packaging structure of the terahertz low-temperature amplification circuit according to claim 1, characterized in that, The bandwidth of the transimpedance amplifier is 20KHz - 5GHz.

8. A packaging method for a chip-level packaging structure of a terahertz low-temperature amplification circuit as described in any one of claims 1-7, characterized in that, The packaging method includes: 1) Provide a packaging lower housing, a PCB circuit board with a through opening, a terahertz quantum well detector, a transimpedance amplifier, a power supply connector, and an output connector. 2) Dispose the PCB circuit board in the packaging lower housing, dispose the terahertz quantum well detector in the packaging lower housing through the through opening, dispose the transimpedance amplifier on the PCB circuit board, and one ends of the power supply connector and the output connector are both disposed on the PCB circuit board, and the other ends are both disposed outside the packaging lower housing.

9. The packaging method of the chip-level packaging structure of the terahertz low-temperature amplification circuit according to claim 8, characterized in that The encapsulation method further includes: 3) providing an upper encapsulation shell and buckling the upper encapsulation shell onto the lower encapsulation shell.

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