Tray and Slide Carrier

Abstract

The present invention discloses a tray and a wafer carrier, wherein the tray is arranged in the wafer carrier used in a tubular PECVD device and holds a substrate, and comprises: a first conductor; a second conductor, an insulating medium is arranged between the first conductor and the second conductor; one of the first conductor and the second conductor can be connected to a first electrode arranged in the tubular PECVD device; the other of the first conductor and the second conductor can be connected to a second electrode of the tubular PECVD device; the substrate is held in one of the first conductor and the second conductor. The tray according to the present invention can be applied not only to a wafer carrier arranged in a tubular PECVD device, but also to the wafer carrier used in occasions such as symmetrical electrodes or asymmetrical electrodes.

Description

Technical Field

[0001] The present invention relates to the field of solar cell technology but is not limited thereto, and in particular to a tray and a wafer carrier. Background Art

[0002] PECVD equipment (plasma enhanced chemical vapor deposition) is widely used in the production of solar cells. Currently, there are two main types of PECVD equipment used for coating solar cells: plate type and tube type. Tubular PECVD equipment uses a wafer carrier such as a graphite boat, which not only occupies a small area, but also has a large single batch of wafers in the graphite boat, which can easily increase production capacity. However, the wafer carrier of the known tubular PECVD equipment is usually only used for symmetrical electrodes, and the use scenarios are limited. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the known PECVD equipment to a certain extent. To this end, the present invention proposes a tray that can be applied to a wafer carrier used in a tubular PECVD equipment and can expand the use scenarios of the wafer carrier. In addition, the present invention also proposes a wafer carrier using the tray.

[0004] The tray according to the first aspect of the present invention is arranged in a wafer carrier used in a tubular PECVD device and holds a substrate, comprising: a first conductor; a second conductor, an insulating medium is arranged between the first conductor and the second conductor; one of the first conductor and the second conductor can be connected to a first electrode arranged in the tubular PECVD device; the other of the first conductor and the second conductor can be connected to a second electrode of the tubular PECVD device; the substrate is held by one of the first conductor and the second conductor.

[0005] The tray according to the present invention has at least the following beneficial effects: it can be applied to a wafer carrier used in a tubular PECVD device, and can enable the wafer carrier to be applied in situations such as symmetrical electrodes or asymmetrical electrodes, thereby expanding the use scenarios of the wafer carrier.

[0006] In some embodiments, the first electrode is a transmitting end of a radio frequency power source, and the second electrode is a ground end of the radio frequency power source.

[0007] In some embodiments, the first conductor and the second conductor are respectively in a plate shape.

[0008] In some embodiments, the insulating medium includes a first insulator sandwiched between the first conductor and the second conductor.

[0009] In some embodiments, the first insulating member at least covers one side of the first conductor and the second conductor that are opposite to each other.

[0010] In some embodiments, the insulating medium includes an insulating layer formed on a surface of at least one of the first conductor and the second conductor, and the insulating layer is opposite to the other of the first conductor and the second conductor.

[0011] In some embodiments, the first conductor is connected to the first electrode, the second conductor is connected to the second electrode, and the substrate is held on the second conductor.

[0012] In some embodiments, a holding portion for holding the substrate is disposed on the second conductor.

[0013] In some embodiments, a plurality of the holding portions are disposed on the second conductor, and the holding portions are spaced apart along a length direction and / or a width direction of the second conductor.

[0014] In some embodiments, the holding portion holds the substrate horizontally.

[0015] In some embodiments, the holding portion includes a groove opened on the second conductor, and the substrate is horizontally held in the groove.

[0016] The wafer carrier device according to the second aspect of the present invention comprises a plurality of trays of any one of the above items which are arranged at intervals.

[0017] The wafer carrier device according to the second aspect of the present invention can expand its application scenarios.

[0018] In some embodiments, a second insulating member is disposed between two adjacent trays, and the second insulating member separates the two adjacent trays.

[0019] In some embodiments, the method further includes: a first conductive portion, respectively connecting one of the first conductor and the second conductor in the tray; and a second conductive portion, respectively connecting the other of the first conductor and the second conductor in the tray.

[0020] In some embodiments, the first conductive portion and the second conductive portion are respectively located on the same side of the tray in the length direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of a top view of an embodiment of a pallet according to the first aspect of the present invention.

[0022] Figure 2 yes Figure 1 Schematic diagram of a pallet viewed from above.

[0023] Figure 3 yes Figure 1 Side view of a tray.

[0024] Figure 4 is a side view of another embodiment of a tray.

[0025] Figure 5 It is a three-dimensional view of an embodiment of a wafer carrier device having a tray of the present invention.

[0026] Figure 6 yes Figure 5 Side view of the slide carrier apparatus in FIG.

[0027] Figure 7 yes Figure 6 A local enlarged view of point A in the figure.

[0028] Figure 8 yes Figure 7 A local enlarged view of point B in FIG. DETAILED DESCRIPTION

[0029] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0030] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0031] In the description of the present invention, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed" etc. are understood as not including the number itself, and "above", "below", "within" etc. are understood as including the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0032] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0033] Figure 1is a schematic diagram of the tray 100 when viewed from above. Figure 2 is a schematic diagram of the tray 100 when viewed from above. Figure 3 is a side view of the tray 100. Figures 1 to 3 According to the first aspect of the present invention, the tray 100 is configured in a wafer carrier 200 used in a tubular PECVD device (see Figure 5 ) and holds a substrate 101, including: a first conductor 102 and a second conductor 103. An insulating medium 106 is provided between the first conductor 102 and the second conductor 103. One of the first conductor 102 and the second conductor 103 can be connected to a first electrode 104 provided in a tubular PECVD device. The other of the first conductor 102 and the second conductor 103 can be connected to a second electrode 105 of the tubular PECVD device. The substrate 101 is held by one of the first conductor 102 and the second conductor 103.

[0034] In this embodiment, the tray 100 can be applied not only to the wafer carrier 200 used in the tubular PECVD equipment, but also to occasions such as symmetrical electrodes or asymmetrical electrodes, thereby expanding the use scenarios of the wafer carrier.

[0035] Specifically, for example, in the current tubular PECVD equipment, in order to increase the output, symmetrical electrodes are usually used, and each electrode is respectively loaded with a substrate 101. For this reason, the tubular PECVD equipment uses a medium frequency plasma source. However, the medium frequency plasma source has a low frequency, and the bombardment of the plasma may cause damage to the substrate of the solar cell, thereby possibly affecting the quality of the solar cell.

[0036] Correspondingly, when a radio frequency plasma source (for example, the first electrode 104 is used as the transmitting end (RF) of the radio frequency power source, and the second electrode 105 is used as the ground end of the radio frequency power source) is applied to the PECVD device, it is beneficial to improve the quality of the solar cell. This is because the radio frequency plasma source has the advantages of high frequency and small plasma bombardment. The use of a radio frequency plasma source can reduce the bombardment of the plasma on the substrate (such as a silicon wafer) of the solar cell, thereby improving the quality of the solar cell.

[0037] However, since the RF electrode is an asymmetric electrode (bias exists), when using an RF plasma source, the speed at which ions transfer to the RF end is different from the speed at which ions transfer to the ground end. This will cause the film growth rate of the substrate 101 of the conductor maintained at the emission end to be inconsistent with the film growth rate of the substrate 101 of the conductor maintained at the ground end, which will in turn cause inconsistent film thickness of the deposited film on the substrate 101.

[0038] Therefore, in this embodiment, when a radio frequency plasma source is connected (for example, the first electrode 104 is used as the transmitting end (RF) of the radio frequency power source, and the second electrode 105 is used as the ground end of the radio frequency power source), in order to suppress the problem of inconsistent film thickness between substrates 101, the substrate 101 is held on one of the conductors of the tray 100. In addition, in the case where the substrate 101 is held on only one of the two conductors (the first conductor 102 and the second conductor 103), in order to increase the loading capacity of the wafer carrier 200, an insulating medium 106 is provided between the first conductor 102 and the second conductor 103 to reduce the thickness of the tray 100 as much as possible as a whole, thereby increasing the number of trays 100 as a whole, and further increasing the loading capacity of the wafer carrier 200.

[0039] Therefore, when the tray 100 of this embodiment is used in a tubular PECVD device provided with symmetrical electrodes, it can achieve a loading capacity that is substantially the same as that of an existing graphite boat. When used in a tubular PECVD device provided with, for example, asymmetrical electrodes (e.g., RF power source), it can improve the coating quality of the substrate 101 while maintaining the output of the tubular PECVD device.

[0040] Specifically, the substrate 101 (indicated by dot-dash lines in the figure) can be, for example, a sheet-shaped silicon wafer, a glass wafer, etc. that can be used as a substrate for a HJT solar cell. However, it is not limited thereto, and the substrate 101 can also be any component that can be deposited and coated in a PECVD device.

[0041] Specifically, the tubular PECVD equipment may be, for example, a horizontal tubular PECVD equipment.

[0042] The tray 100 will be described in detail below.

[0043] In some embodiments, the first conductor 102 and the second conductor 103 are plate-shaped. Specifically, the materials of the conductive plate-shaped first conductor 102 and the second conductor 103 are not particularly limited as long as they are applicable to PECVD equipment, for example, metal materials such as stainless steel, graphite materials, carbon fiber materials, etc. can be selected.

[0044] In order to reduce the distance between the first conductor 102 and the second conductor 103 and to perform effective insulation, an insulating medium 106 is disposed between the first conductor 102 and the second conductor 103 .

[0045] Specifically, for example, the insulating medium 106 includes a first insulating member 107 sandwiched between the first conductor 102 and the second conductor 103. Specifically, the first insulating member 107 is, for example, in the form of a plate, and the first conductor 102 and the second conductor 103 are respectively attached to the two sides of the first insulating member 107. Thus, the thickness of the tray 100 can be reduced by sandwiching the first insulating member 107 between the first conductor 102 and the second conductor 103. The material of the first insulating member 107 is not particularly limited as long as it can be applied to the PECVD equipment and can be processed into a plate shape. For example, insulating materials such as glass, ceramics, aluminum oxide, and silicon carbide can be selected.

[0046] In addition, the substrate 101 is held on one of the first conductor 102 and the second conductor 103, that is, as a whole, the tray 100 preferably holds the substrate 101 only on one conductor. Therefore, in order to reduce the thickness of the tray 100, thereby increasing the number of trays 100 as a whole, and further increasing the amount of wafers loaded in the wafer carrier 200, the thickness T1 of the first insulating member 107 is, for example, less than 5 mm, and the thinner the better, while being able to effectively insulate and ensure the overall strength of the first insulating member 107. By reducing the thickness T1 of the first insulating member 107 as much as possible, it is possible to reduce the thickness of the tray 100 as a whole, thereby increasing the number of trays 100 as a whole, and further increasing the amount of wafers loaded in the wafer carrier 200.

[0047] In addition, in some embodiments, the first insulating member 107 at least covers the opposite side of the first conductor 102 and the second conductor 103. Specifically, in order to reduce the thickness of the tray 100 as much as possible, the thickness of the first insulating member 107 is made as thin as possible. In this case, the distance between the first conductor 102 and the second conductor 103 is very close. In this embodiment, by setting the first insulating member 107 to at least cover the opposite side of the first conductor 102 and the second conductor 103, the first conductor 102 and the second conductor 103 can be effectively prevented from being connected. Specifically, for example, the first insulating member 107 is roughly in the shape of a rectangular plate. The first conductor 102 includes a first main body 108 that is roughly in the shape of a rectangular. The second conductor 103 includes a second main body 109 that is roughly in the shape of a rectangular. The first main body 108 and the second main body 109 clamp the first insulating member 107. The two sides of the first insulating member 107 in the width direction (left-right direction in the drawings) extend outward, for example, by 20 mm relative to the two sides of the width direction (left-right direction in the drawings) of the first main body 108 and the second main body 109. Similarly, the two sides of the first insulating member 107 in the length direction (front-back direction in the drawings) also extend outward, for example, by 20 mm relative to the two sides of the length direction (front-back direction in the drawings) of the first main body 108 and the second main body 109. Thus, the first insulating member 107 can effectively prevent the first conductor 102 and the second conductor 103 from being electrically connected.

[0048] Figure 4 1 is a side view of the tray 100a. Figure 4 In some embodiments, in order to further reduce the thickness of the tray 100, the insulating medium 106 may also include an insulating layer 110, the insulating layer 110 is formed on the surface of at least one of the first conductor 102 and the second conductor 103, and the insulating layer 110 is opposite to the other of the first conductor 102 and the second conductor 103. For example, the insulating layer 110 may be formed on the upper surface of the first conductor 102, and the insulating layer 110 is opposite to and attached to the lower surface of the second conductor 103. Specifically, in the case where effective insulation can be performed, a coating or plating such as a ceramic layer, an aluminum oxide layer, etc. may be formed on the side (upper surface) of the first conductor 102 and the second conductor 103 and / or on the side (lower surface) of the second conductor 103 and the first conductor 102. In this way, the thickness of the tray 100 can be further reduced.

[0049] In addition, although the examples of providing the first insulating member 107 between the first conductor 102 and the second conductor 103 as the insulating medium 106, or forming the insulating layer 110 on the surface of the first conductor 102 and / or the second conductor 103 are described above, the present invention is not limited thereto. The insulating medium 106 may also include the first insulating member 107 and the insulating layer 110 at the same time.

[0050] Continue to refer to Figure 3 , Figure 4 In some embodiments, when the tubular PECVD device uses a radio frequency plasma source, in order to improve the coating efficiency of the substrate 101, the first conductor 102 is connected to the first electrode (i.e., the transmitting end of the radio frequency power supply) 104, the second conductor 103 is connected to the second electrode (i.e., the grounding end of the transmitting end of the radio frequency power supply) 105, and the substrate 101 is maintained on the second conductor 103. Specifically, taking a tray 100 as an example, the first conductor 102 is arranged on one side (the lower side in the drawings) of the thickness direction of the tray 100 (the upper side in the drawings) and is connected to the first electrode 104 of the radio frequency power supply. The second conductor 103 is arranged on the other side (the upper side in the drawings) of the thickness direction of the tray 100 and is connected to the second electrode 105 of the radio frequency power supply. The first insulating member 107 (if present) is clamped between the second conductor 103 and the first conductor 102. The substrate 101 is maintained on the second conductor 103 connected to the second electrode 105. As a result, the film growth rate of the substrate 101 can be accelerated, thereby improving the coating efficiency of the substrate 101.

[0051] Continue to refer to Figure 1 In some embodiments, in order to reliably hold the substrate 101, a holding portion 111 for holding the substrate 101 is provided on the second conductor 103. The holding portion 111 is not particularly limited as long as it can hold the substrate 101. For example, the holding portion 111 can hold the substrate 101 horizontally (i.e., the substrate 101 is fed into the vacuum chamber of the PECVD device in a manner such that its coating surface is parallel to the horizontal direction). In addition, the holding portion 111 can also hold the substrate 101 vertically (i.e., the substrate 101 is fed into the vacuum chamber of the PECVD device in a manner such that its coating surface is parallel to the vertical direction), or the holding portion 111 can also hold the substrate 101 obliquely (i.e., the substrate 101 is fed into the vacuum chamber of the PECVD device in a manner such that its coating surface is inclined relative to the parallel direction or the vertical direction). In addition, a plurality of holding portions 111 can be provided on the second conductor 103, and a plurality of holding portions 111 can be provided along the length direction and / or width direction of the second conductor 103.

[0052] In some embodiments, in order to suppress the plating problem that may exist on the other side of the substrate 101, the holding portion 111 holds the substrate 101 horizontally. Specifically, for example, the holding portion 111 includes a groove 112 opened on the second conductor 103, and the substrate 101 is horizontally held in the groove 112. Thus, in a state where the substrate 101 is horizontally held in the groove 112, the substrate 101 can be reliably attached to the second conductor 103 due to its own weight. Thus, the plating problem that may exist on the other side of the substrate 101 can be suppressed.

[0053] In addition, it should be noted that, when the holding portion 111 vertically holds the substrate 101 , the holding portion 111 may include a clamping point (not shown) installed on the second conductor 103 , and the substrate 101 is vertically held on the clamping point.

[0054] The overall structure of the wafer carrier device 200 is described in detail below.

[0055] Figure 5 is a perspective view of a wafer carrier device 200 having a tray 100, Figure 6 is a side view of the wafer carrier 200, Figure 7 yes Figure 6 A local enlarged view of point A in the figure. Figure 8 yes Figure 7 A partial enlarged view of point B in FIG. Figures 5 to 8 In some embodiments, in order to reliably hold each tray 100, the wafer carrier 200 further includes a base 201, which supports a plurality of trays 100 spaced apart in a vertical direction (up and down direction in the accompanying drawings). Specifically, the base 201 includes, for example, two, which are respectively located on both sides of the width direction (left and right direction in the accompanying drawings) of the wafer carrier 200. The base 201 extends along the length direction (front and back direction in the accompanying drawings) of the tray 100. The two bases 201 are respectively connected by a plurality of first connecting rods 202 spaced apart in the length direction of the base 201. In addition, support seats 203 are respectively provided at both ends of the length direction of each base 201, and the support seats 203 are used to support the wafer carrier 200 as a whole on the insulating rod (not shown) of the tubular PECVD equipment.

[0056] Reference Figure 7 And auxiliary reference Figure 6In some embodiments, in order to reliably hold each tray 100, a second insulating member 204 is provided between each two adjacent trays 100, and the second insulating member 204 separates the two adjacent trays 100. Specifically, the wafer carrier 200 further includes a plurality of columns 205, a portion of which is mounted on the base 201 and extends in a direction perpendicular to the base 201 (in the vertical direction in the figure). The first conductor 102, the second conductor 103 and both sides of the first insulating member 107 in the width direction of each tray 100 are respectively provided with mounting holes 113 for allowing the columns 205 to pass through. Thus, each tray 100 is stacked at intervals in a direction perpendicular to the base 201 through the columns 205 and the second insulating member 204. The second insulating member 204 is in the shape of a shaft sleeve and is sleeved on the columns 205. The second insulating member 204 and the trays 100 are arranged alternately, and the two ends of the second insulating member 204 in the axial direction respectively abut against the two adjacent trays 100. Thus, the second insulating member 204 can separate the two trays 100. The material of the second insulating member 204 is not particularly limited as long as it can reliably support and separate the trays 100, and a ceramic material can be selected, for example. In addition, the axial length of the second insulating member 204 is not particularly limited as long as it can insulate the two trays 100. From the perspective of increasing the number of trays 100 to increase the overall loading capacity of the wafer carrier 200, for example, 10 mm to 14 mm can be selected.

[0057] In addition, although the above description is based on the example of the wafer carrier 200 being arranged in a vertical direction (i.e., arranged in a substantially vertical manner in the working state), it is not limited thereto. The wafer carrier 200 can also be arranged in a horizontal direction (i.e., arranged in a substantially horizontal manner in the working state) with reference to the known graphite boat structure.

[0058] Reference Figure 8 And auxiliary reference Figure 5 In some embodiments, in order to simplify the access structure of the RF power supply, the wafer carrier 200 further includes: a first conductive portion 114 and a second conductive portion 115. The first conductive portion 114 is respectively connected to one of the first conductor 102 and the second conductor 103 of each tray 100. The second conductive portion 115 is respectively connected to the other of the first conductor 102 and the second conductor 103 of the tray 100. The following is an example in which the first conductive portion 114 is respectively connected to the first conductor 102 of each tray 100, and the second conductive portion 115 is respectively connected to the second conductor 103 of each tray 100. In addition, since the way the first conductive portion 114 is connected to the first conductor 102 and the way the second conductive portion 115 is connected to the second conductor 103 are roughly the same, the way the first conductive portion 114 is connected to the first conductor 102 is mainly used as an example for description.

[0059] Specifically, the first conductive portion 114 includes a plurality of first conductive blocks 116 and a second conductive block 117 for connecting to the first electrode 104 of the RF power supply. A first lug portion 118 is provided on both sides of the length direction of the first conductor 102, and the first lug portion 118 and the first main body portion 108 are integrally formed. A first conductive block 116 is provided between two adjacent trays 100, and the first conductive block 116 connects the first conductors 102 of the two trays 100 respectively. The second conductive block 117 is provided in the middle position of the plurality of trays 100 distributed at intervals, for example, in the up-down direction, and connects the first conductors 102 of the plurality of trays 100 in the middle position respectively. In addition, a first connection hole 119 is provided at one end of the second conductive block 117, for example, to allow the first electrode 104 of the RF power supply to be inserted. Thus, when the wafer carrier 200 is fed into the tubular PECVD device, the first electrode 104 of the RF power supply can be inserted into the first connection hole 119. Therefore, only one first connection hole 119 can be provided in the wafer carrier 200, that is, the first electrode 104 of the RF power source can be connected to the first conductor 102 of each tray 100, thereby simplifying the access structure of the RF power source.

[0060] Similarly, the second conductive portion 115 also includes a plurality of third conductive blocks 120 and a fourth conductive block 121 for connecting to the second electrode 105 of the RF power source. A second lug portion 122 is also provided on both sides of the length direction of the second conductor 103. The third conductive block 120 and the fourth conductive block 121 connect the second conductors 103 at the second lug portions 122 of the second conductors 103, respectively. Similarly, a second connection hole 123 is provided at one end of the fourth conductive block 121 to allow the second electrode 105 of the RF power source to be inserted. Thus, when the wafer carrier 200 is fed into the tubular PECVD device, the second electrode 105 of the RF power source can be inserted into the second connection hole 123.

[0061] In some embodiments, in order to further simplify the access structure of the RF power supply, the first conductive portion 114 and the second conductive portion 115 are respectively located on the same side of the length direction of the tray 100. Specifically, for example, the first conductive portion 114 and the second conductive portion 115 are respectively arranged on one side (the rear side in the figure) of the furnace tail end of the PEVCD device in the length direction of the wafer carrier 200. Thus, the first electrode 104 and the second electrode 105 of the RF power supply can be respectively accessed from the furnace tail end of the PEVCD device, which can simplify the access structure of the RF power supply.

[0062] It should be noted that, although the first conductive portion 114 and the second conductive portion 115 are respectively arranged on the same side of the length direction of the tray 100, the present invention is not limited thereto. For example, the first conductive portion 114 and the second conductive portion 115 may also be respectively arranged on the same side of the width direction of the tray 100 (the left side or the right side in the drawing).

[0063] Therefore, in the wafer carrier 200 of the present embodiment, since it has a plurality of trays 100 arranged at intervals, the wafer loading capacity of the wafer carrier 200 can be increased compared to the known plate-type PECVD equipment.

[0064] In the wafer carrier device 200 of this embodiment, since each tray 100 is respectively provided with a first conductor 102 and a second conductor 103 which can be connected to the first electrode 104 and the second electrode 105 of the radio frequency power supply, it is possible to connect the radio frequency power supply to the tubular PECVD equipment, thereby improving the coating quality of the substrate 101.

[0065] In addition, in the wafer carrier 200 of the present embodiment, since the first conductor 102 and the second conductor 103 of each tray 100 are insulated by an insulating medium 106 (for example, a first insulating member 107, an insulating layer 110, etc.), the thickness of the tray 100 can be reduced, thereby further increasing the loading capacity of the wafer carrier 200.

[0066] In addition, in the wafer loading device 200 of the present embodiment, since the first conductor 102 and the second conductor 103 of each tray 100 are insulated by an insulating medium 106 (such as a first insulating member 107, an insulating layer 110, etc.), the thickness of the tray 100 can be reduced, and when connected to a symmetrical electrode, the wafer loading capacity can be roughly maintained the same as that of a traditional graphite boat structure.

[0067] In addition, in the wafer carrier 200 of the present embodiment, since each substrate 101 can be respectively held in the second conductor 103 connected to the second electrode (ground terminal) 105 of the radio frequency power source, the coating efficiency of the substrate 101 can be improved.

[0068] In addition, in the wafer carrier device 200 of the present embodiment, since each tray 100 can hold the substrate 101 horizontally, it is also possible to suppress the plating wrap problem that may exist on the other side of the substrate 101, thereby improving the quality of the coating.

[0069] Furthermore, in the wafer carrier 200 of the present embodiment, since the first conductive portion 114 and the second conductive portion 115 can be disposed on the same side of the wafer carrier 200 , the access structure of the radio frequency power source can also be simplified.

[0070] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0071] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A tray, arranged in a wafer carrier used in a tubular PECVD apparatus and holding a substrate horizontally, characterized in that: include: A first conductor is in a plate shape, and the material of the first conductor is a metal material, a graphite material or a carbon fiber material; The second conductor is in a plate shape, the material of the second conductor is a metal material, a graphite material or a carbon fiber material, and an insulating medium is provided between the first conductor and the second conductor; One of the first conductor and the second conductor is connected to a first electrode disposed in the tubular PECVD device; The other of the first conductor and the second conductor is connected to the second electrode of the tubular PECVD device; The substrate is held by one of the first conductor and the second conductor; The insulating medium comprises: a first insulating member clamped between the first conductor and the second conductor, the first insulating member at least covering one side of the first conductor and the second conductor facing each other to prevent conduction between the first conductor and the second conductor, and / or, The insulating medium includes an insulating layer formed on the surface of at least one of the first conductor and the second conductor, and the insulating layer is opposite to and attached to the other of the first conductor and the second conductor; In the case where there are a plurality of trays, the trays are stacked at intervals in the vertical direction.

2. The pallet according to claim 1, characterized in that: The first electrode is a transmitting end of a radio frequency power source, and the second electrode is a grounding end of the radio frequency power source.

3. The pallet according to claim 2, characterized in that: The first conductor is connected to the first electrode, the second conductor is connected to the second electrode, and the substrate is held on the second conductor.

4. The pallet according to claim 3, characterized in that: The second conductor is provided with a holding portion for holding the substrate.

5. The pallet according to claim 4, characterized in that: A plurality of the holding portions are disposed on the second conductor, and the holding portions are spaced apart along the length direction and / or width direction of the second conductor.

6. The pallet according to claim 4, characterized in that: The holding portion holds the substrate horizontally.

7. The pallet according to claim 6, characterized in that: The holding portion includes a groove opened on the second conductor, and the substrate is horizontally held in the groove.

8. A wafer carrier device, characterized in that: The method comprises a plurality of trays according to any one of claims 1 to 7 arranged at intervals, wherein the substrate is held only on the first conductor in the plurality of trays, or is held only on the second conductor in the plurality of trays.

9. The wafer carrier device according to claim 8, characterized in that: A second insulating member is disposed between two adjacent trays, and the second insulating member separates the two adjacent trays.

10. The wafer carrier device according to claim 8, characterized in that: Also includes: a first conductive portion, respectively connecting one of the first conductor and the second conductor in the tray; The second conductive portion connects the other of the first conductor and the second conductor in the tray.

11. The wafer carrier device according to claim 10, characterized in that: The first conductive portion and the second conductive portion are respectively located on the same side in the length direction of the tray.

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