On-chip micro electron source and manufacturing method, electron source system, and electronic equipment

Abstract

The present application discloses an on-chip micro-electron source and a manufacturing method thereof, an electron source system, and an electronic device, wherein the on-chip micro-electron source includes a substrate, a driving electrode pair is formed on the substrate, a gap exists between the driving electrode pairs, an electron tunneling junction is formed in the gap, the driving electrode pair can be used to drive the electron tunneling junction to emit an electron beam, a focusing electrode can be fixed above the substrate, a focusing channel is formed on the focusing electrode and longitudinally penetrates the focusing electrode, and is used to reduce the beam spot size of the electron beam when the electron beam passes through. That is to say, in the embodiment of the present application, the electron tunneling junction can be driven by the driving electrode to emit an electron beam, and the electron tunneling junction does not need to pass through multiple material layers, and has a higher emission efficiency. The electron beam can be gathered by the focusing electrode, thereby reducing the beam spot size of the electron beam, so that an electron beam with a large emission current and a small beam spot size can be obtained.

Description

Technical Field

[0001] The present application relates to the field of electronic science and technology, and in particular to an on-chip micro electron source and a manufacturing method thereof, an electron source system, and an electronic device. Background Art

[0002] An electron source is a device that provides an electron beam that can move in free space. It is widely used in important fields such as medical X-ray equipment, X-ray nondestructive testing equipment, X-ray fluorescence testing equipment, sterilization and disinfection equipment, vacuum measurement and leak detection equipment, ion electric propulsion equipment, electron beam detection and imaging equipment, mass spectrometers, high-power microwave sources, electric vacuum devices, smart phones, computers, etc. At present, the miniaturization and on-chip of electron sources is one of the main bottlenecks restricting the miniaturization and on-chip of the above equipment. Therefore, high-performance, small-sized on-chip micro electron sources are important electronic components.

[0003] The research on on-chip micro-electron sources began in the 1960s, and there are many on-chip micro-electron sources available. However, the overall emission current of existing on-chip micro-electron sources is small, and the beam spot size of the electron beam is large, which cannot meet the needs of many applications. Summary of the invention

[0004] In view of this, the present application provides an on-chip micro electron source and a manufacturing method thereof, an electron source system, and an electronic device to reduce the beam spot size of the on-chip micro electron source, thereby meeting more application requirements.

[0005] In order to solve the above technical problems, this application adopts the following technical solutions:

[0006] The embodiment of the present application provides an on-chip micro-electronic source, comprising:

[0007] substrate;

[0008] A pair of driving electrodes on the substrate; a gap exists between the pair of driving electrodes, and an electron tunneling junction is formed in the gap; the pair of driving electrodes is used to drive the electron tunneling junction to emit an electron beam;

[0009] A focusing electrode is fixed above the substrate, and a focusing channel is formed on the focusing electrode and runs through the focusing electrode longitudinally, so as to reduce the beam spot size of the electron beam when the electron beam passes through.

[0010] Optionally, the focusing electrode is a metal electrode; or the focusing electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or lower surface of the insulating structure.

[0011] Optionally, a first supporting member is formed between the focusing electrode and the substrate.

[0012] Optionally, when the focusing electrode is an insulating structure, the insulating structure and the first supporting component are an integrated structure.

[0013] Optionally, the first supporting component is a side wall located outside the focusing electrode, and the focusing electrode and the driving electrode have conductive ends extending to the outside of the first supporting component.

[0014] Optionally, there are multiple focusing electrodes, and the multiple focusing electrodes are arranged vertically.

[0015] Optionally, a plurality of the focusing electrodes form a step structure.

[0016] Optionally, also include:

[0017] The extraction electrode fixed between the substrate and the focusing electrode is used to provide an electron accelerating electric field for the electron beam; an extraction channel is formed on the extraction electrode and vertically penetrates the extraction electrode.

[0018] Optionally, the lead-out electrode is a metal electrode; or the lead-out electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or lower surface of the insulating structure.

[0019] Optionally, a second supporting component is formed between the extraction electrode and the substrate.

[0020] Optionally, when the lead-out electrode is an insulating structure, the insulating structure and the second supporting structure are an integrated structure.

[0021] Optionally, the second supporting component is a side wall located outside the extraction electrode, and the extraction electrode and the driving electrode have conductive ends extending to the outside of the second supporting component.

[0022] Optionally, the extraction electrode and the focusing electrode form a step structure.

[0023] Optionally, the driving electrode pair is in contact with the substrate, the electron tunneling junction is formed in an insulating layer, and the insulating layer is formed between the driving electrode pair.

[0024] Optionally, an insulating layer is formed between the driving electrode pair and the substrate, and an electron tunneling junction is formed in the insulating layer directly facing the gap between the driving electrode pair.

[0025] Optionally, the material of the insulating layer is one or more of the following materials: silicon oxide, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, magnesium oxide, yttrium oxide, scandium oxide, germanium oxide, lanthanum oxide, strontium oxide, calcium oxide, barium oxide, titanium oxide, strontium titanate, lanthanum aluminate, silicon nitride, aluminum nitride, silicon carbide, diamond and amorphous carbon.

[0026] Optionally, the driving electrode pair includes two opposing finger electrodes extending outside the two regional electrodes, and each of the regional electrodes includes at least one finger electrode.

[0027] Optionally, a heat sink is formed under the substrate.

[0028] Optionally, the electrode material of the driving electrode is one or more of the following materials: metal, graphene and carbon nanotube.

[0029] Optionally, the width of the gap is less than or equal to 10 microns.

[0030] An embodiment of the present application also provides an electron source system, including a base and the micro electron source; the base is used to provide support for the micro electron source and provide a power connection port for the micro electron source.

[0031] Optionally, the electron source system further includes a control module; the control module is connected to the power connection port and is used to supply power to the micro electron source.

[0032] The present application also provides a method for manufacturing an on-chip micro-electron source, comprising:

[0033] providing a substrate;

[0034] A driving electrode pair is formed on the substrate, with a gap between the driving electrode pair and an electron tunneling junction formed in the gap; the driving electrode pair is used to drive the electron tunneling junction to emit an electron beam;

[0035] A focusing electrode is fixed above the substrate, and a focusing channel is formed on the focusing electrode and longitudinally penetrates the focusing electrode, so as to reduce the beam spot size of the electron beam when the electron beam passes through.

[0036] Optionally, the focusing electrode is a metal electrode; or the focusing electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or lower surface of the insulating structure.

[0037] Optionally, fixing the focusing electrode on the substrate comprises:

[0038] forming a first supporting member on the substrate;

[0039] A focusing electrode is formed on the first supporting member.

[0040] Optionally, before fixing the focusing electrode above the substrate, the method further comprises:

[0041] An extraction electrode is fixed on the substrate, the extraction electrode is used to provide an electron accelerating electric field for the electron beam, and an extraction channel is formed on the extraction electrode and vertically penetrates the extraction electrode.

[0042] Optionally, the lead-out electrode is a metal electrode; or the lead-out electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or lower surface of the insulating structure.

[0043] Optionally, fixing the extraction electrode on the substrate includes:

[0044] forming a second supporting member on the substrate;

[0045] An extraction electrode is formed on the second supporting member.

[0046] Optionally, the method further includes:

[0047] A heat sink is formed under the heat conductive layer and contacts the heat conductive layer.

[0048] An embodiment of the present application also provides an electronic device, which at least includes the aforementioned micro electron source or electron source system.

[0049] Optionally, the electronic equipment includes at least one of the following equipment: medical X-ray equipment, X-ray non-destructive testing equipment, X-ray fluorescence detection equipment, sterilization and disinfection equipment, vacuum measurement and leak detection equipment, ion electric propulsion equipment, electron beam detection and imaging equipment, mass spectrometer, high-power microwave source, electric vacuum device, smart phone, computer.

[0050] Compared with the prior art, this application has the following beneficial effects:

[0051] Based on the above technical solutions, the present application provides an on-chip micro-electron source and a manufacturing method thereof, an electron source system, and an electronic device, wherein the on-chip micro-electron source includes a substrate, a driving electrode pair is formed on the substrate, a gap exists between the driving electrode pairs, an electron tunneling junction is formed in the gap, the driving electrode pair can be used to drive the electron tunneling junction to emit an electron beam, a focusing electrode can be fixed above the substrate, and a focusing channel is formed on the focusing electrode that longitudinally penetrates the focusing electrode, which is used to reduce the beam spot size of the electron beam when the electron beam passes through. That is to say, in the embodiment of the present application, the electron tunneling junction can be driven by the driving electrode to emit an electron beam, and the electron tunneling junction does not need to pass through multiple material layers, and has a higher emission efficiency. The electron beam can be gathered by the focusing electrode, thereby reducing the beam spot size of the electron beam, so that an electron beam with a large emission current and a small beam spot size can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1A flow chart of a method for manufacturing an on-chip micro-electron source provided in an embodiment of the present application;

[0053] Figure 2 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0054] Figure 3 for Figure 2 A cross-sectional view of the on-chip micro electron source along the AA' direction;

[0055] Figure 4 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0056] Figure 5 for Figure 4 A cross-sectional view of the on-chip micro electron source along the AA' direction;

[0057] Figure 6 A schematic diagram of the structure of an electron tunneling junction provided in an embodiment of the present application;

[0058] Figure 7 An energy band diagram of an electron tunneling junction in an embodiment of the present application;

[0059] Figure 8 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0060] Fig. 9 for Figure 8 A cross-sectional view of the on-chip micro electron source along the AA' direction;

[0061] Fig.10 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0062] Fig.11 for Fig.10 A cross-sectional view of the on-chip micro electron source along the AA' direction is shown;

[0063] Fig.12 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0064] Fig.13 for Fig.12 A cross-sectional view of the on-chip micro electron source along the AA' direction;

[0065] Fig.14 for Fig.12 A local enlarged view of the area of ​​the on-chip micro electron source in the dotted ellipse;

[0066] Fig.15 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0067] Fig.16 for Fig.15 A cross-sectional view of the on-chip micro electron source along the AA' direction;

[0068] Fig.17 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0069] Fig.18 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0070] Fig.19 for Fig.18 A cross-sectional view of the on-chip micro electron source along the AA' direction;

[0071] Fig. 20 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0072] Fig.21 for Fig. 20 A cross-sectional view of the on-chip micro electron source along the AA' direction;

[0073] Fig. 22 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in an embodiment of the present application;

[0074] Fig.23 for Fig. 22 A cross-sectional view of the on-chip micro electron source along the AA' direction;

[0075] Fig.24 A working schematic diagram of an on-chip micro-electronic source is provided for an embodiment of the present application;

[0076] Fig.25 A schematic diagram of an electron source system provided in an embodiment of the present application;

[0077] Fig.26 A schematic diagram of another electron source system provided in an embodiment of the present application. DETAILED DESCRIPTION

[0078] An electron source is a device that provides an electron beam that can move in free space. It is widely used in important fields such as medical X-ray equipment, X-ray nondestructive testing equipment, X-ray fluorescence testing equipment, sterilization and disinfection equipment, vacuum measurement and leak detection equipment, ion electric propulsion equipment, electron beam detection and imaging equipment, mass spectrometers, high-power microwave sources, electric vacuum devices, smart phones, computers, etc. At present, the miniaturization and on-chip of electron sources is one of the main bottlenecks restricting the miniaturization and on-chip of the above equipment. Therefore, high-performance, small-sized on-chip micro electron sources are important electronic components.

[0079] The research on on-chip micro-electron sources began in the 1960s. Currently, there are many types of on-chip electron sources, such as: field emission on-chip electron source based on micro-tip structure, tunneling electron source based on metal (M)-insulator (I)-metal (M) tunneling junction, negative electron affinity on-chip electron source, on-chip micro-thermal emission electron source, etc.

[0080] Among them, the main problems of field emission on-chip electron sources are high operating voltage, ultra-high vacuum required for stable operation, poor array uniformity, etc. The main problems of MIM tunneling electron sources and negative electron affinity electron sources are low electron emission efficiency and low emission current density. In addition to low emission efficiency and low emission current density, the main problems of micro-chip thermal emission electron sources also include high local temperature and high power consumption.

[0081] In order to solve the problems existing in the above-mentioned on-chip electron source, an embodiment of the present application provides a surface tunneling electron source based on a resistive material, which is a surface tunneling micro electron source with a planar multi-region structure. It specifically includes a substrate, on the surface of which two connected conductive regions and an insulating region are formed, wherein the insulating region is located between the two conductive regions and connected to the two conductive regions, thereby forming an electron tunneling junction. The surface tunneling electron source also includes a driving electrode pair, by which a voltage is applied to the surface tunneling electron source through the driving electrode pair, so that electrons can tunnel from the conductive region with low potential in the electron tunneling junction through the insulating region into the conductive region with high potential, and are emitted from the conductive region with high potential close to the boundary of the insulating region to the vacuum.

[0082] Compared with the vertical tunneling electron source of the traditional multi-layer MIM structure, the electrons of the surface tunneling electron source do not need to pass through multiple material layers when emitting, and have higher emission efficiency. However, the inventors have found through research that the beam spot size of the electron beam emitted by the surface tunneling electron source is relatively large. For the electron beam of the same current, the larger the beam spot size, the smaller the density of the electron beam, which cannot meet more application requirements.

[0083] Based on the above technical problems, the present application provides an on-chip micro-electron source and a manufacturing method thereof, an electron source system, and an electronic device, wherein the on-chip micro-electron source includes a substrate, a driving electrode pair is formed on the substrate, a gap exists between the driving electrode pairs, an electron tunneling junction is formed in the gap, the driving electrode pair can be used to drive the electron tunneling junction to emit an electron beam, a focusing electrode can be fixed above the substrate, and a focusing channel is formed on the focusing electrode that longitudinally penetrates the focusing electrode, which is used to reduce the beam spot size of the electron beam when the electron beam passes through. That is to say, in the embodiment of the present application, the electron tunneling junction can be driven by the driving electrode to emit an electron beam, and the electron tunneling junction does not need to pass through multiple material layers, and has a higher emission efficiency. The electron beam can be gathered by the focusing electrode, thereby reducing the beam spot size of the electron beam, so that an electron beam with a large emission current and a small beam spot size can be obtained.

[0084] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0085] The present application embodiment provides a method for manufacturing an on-chip micro-electron source, referring to Figure 1 FIG. 1 is a flow chart of a method for manufacturing an on-chip micro-electron source according to an embodiment of the present application. Specifically, the method may include the following steps:

[0086] S101, providing a substrate 1, reference Figure 2 and Figure 3 shown.

[0087] In the embodiment of the present application, the substrate 1 can provide support for the micro-electronic source, and its material can be one or more of the following materials: silicon, germanium, silicon oxide, aluminum oxide, beryllium oxide, silicon nitride, aluminum nitride, boron nitride, silicon carbide, diamond, glass, ceramic, metal. Figure 2 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in the embodiment of the present application. Figure 3 Shown Figure 2 A cross-sectional view of the on-chip micro electron source along the AA' direction.

[0088] S102, forming a pair of driving electrodes 31 and 32 on the substrate 1, wherein there is a gap between the pair of driving electrodes 31 and 32, and an electron tunneling junction 2 is formed in the gap, Figure 3-Figure 19 shown.

[0089] In the embodiment of the present application, the driving electrode pair 31, 32 includes a first driving electrode 31 and a second driving electrode 32. Different voltages are applied to the first driving electrode 31 and the second driving electrode 32 during operation, so there may be a voltage difference. The driving electrode pair 31, 32 may be made of a material with good conductivity, for example, at least one of a metal, a doped semiconductor, graphene and a carbon nanotube. There may be a gap between the driving electrode pair 31, 32, that is, there is a gap between the first driving electrode 31 and the second driving electrode 32, and the width of the gap is less than or equal to 10 microns. Reference Figure 4 and Figure 5 As shown, which is a schematic diagram of the structure of the on-chip micro-electronic source in the manufacturing process in the embodiment of the present application, Figure 5 Shown Figure 4 A cross-sectional view of the on-chip micro electron source along the AA' direction.

[0090] An electron tunneling junction 2 may be formed in the gap between the driving electrode pairs 31 and 32. Figure 6As shown, it is a schematic diagram of the structure of an electron tunneling junction provided in an embodiment of the present application. From the first driving electrode 31 to the second driving electrode 32, the electron tunneling junction 2 may include a first conductive region 22, an insulating region 21, and a second conductive region 23 connected in sequence, thus forming a conductor-insulator-conductor electron tunneling junction 2. Among them, the first conductive region 22 is connected to the first driving electrode 31, and the second conductive region 23 is connected to the second driving electrode 32.

[0091] The driving electrode pair 31 and 32 can drive the electron tunneling junction 2 to emit an electron beam. Figure 7 As shown, it is an energy band diagram of the electron tunneling junction in the embodiment of the present application. After a voltage is applied to the first drive electrode 31 and the second drive electrode 32, assuming that the potential of the first drive electrode 31 is lower than the potential of the second drive electrode 32, the potential of the first conductive region 22 is also lower than the potential of the second conductive region 23. The electrons tunnel from the first conductive region 22 with a low potential through the potential barrier at the interface between the first conductive region 22 and the insulating region 21, enter the insulating region 21, and are accelerated by the electric field in the insulating region 21 to obtain energy. When the applied voltage is higher than the surface potential barrier of the second conductive region 23, the energy of the electrons after passing through the insulating region 21 is higher than the surface potential barrier of the second conductive region 23. At this time, the electrons can cross the surface potential barrier of the second conductive region 23 and be emitted into the vacuum, completing the emission process of the electrons from the inside of the solid to the vacuum.

[0092] In an embodiment of the present application, an electron tunneling junction 2 can be formed in an insulating layer, and the insulating layer can be made of a resistive material, wherein the resistive material refers to a material that is initially electrically insulating, and when a voltage is applied to it for soft breakdown, it can present a resistive state and have the ability to emit electrons. After the activation of the resistive material is completed, the resistive material changes from an electrically insulating material to a conductive material.

[0093] Specifically, the driving electrode pairs 31 and 32 can be used to softly break down the insulating layer in the gap between the driving electrode pairs 31 and 32, so that conductive filaments that cross the entire gap are formed in the insulating layer in the region, so that the insulating layer in the region is changed from an insulating state to a conductive state, and then the driving electrode pairs 31 and 32 are used to apply voltage to the insulating layer in the gap to break the conductive filaments in the region, forming an insulating region 21 at the location where the conductive filaments are broken, and the conductive filaments on both sides of the insulating region can serve as the first conductive region 22 and the second conductive region 23. The shape of the conductive filaments can be any shape, for example, a quadrilateral, or other irregular shapes.

[0094] As an example, the insulating layer can be selected from one or more of the following materials: silicon oxide, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, magnesium oxide, yttrium oxide, scandium oxide, germanium oxide, lanthanum oxide, strontium oxide, calcium oxide, barium oxide, titanium oxide, strontium titanate, lanthanum aluminate, silicon nitride, aluminum nitride, silicon carbide, diamond and amorphous carbon.

[0095] In a specific implementation, the insulating layer used to form the electron tunneling junction 2 can be located in the same layer as the driving electrode pair. Figure 4 , Figure 5 and Figure 6 In this way, after the driving electrode pairs 31 and 32 are formed on the substrate 1, an insulating layer in the gap can be formed according to the shape of the driving electrode pairs 31 and 32, or an insulating layer can be formed in the area including the gap outside the driving electrode pairs 31 and 32. When the insulating layer is softly broken down by the voltage of the driving electrode pairs 31 and 32, since there is a voltage between the driving electrode pairs 31 and 32, only the insulating layer under the gap of the driving electrode pairs 31 and 32 is softly broken down, and the insulating layer in other areas is not affected. When the insulating layer and the driving electrode pairs 31 and 32 are located in the same layer, the insulating layer can also be first formed on the substrate 1, and a part of the insulating layer can be etched away, and the driving electrode pairs 31 and 32 can be formed on the substrate exposed by removing the insulating layer. The step of etching the insulating layer can be specifically: spin coating electron beam photoresist on the insulating layer, and performing electron beam exposure, developing and fixing, wet etching, degumming and other process steps.

[0096] It should be noted that, in the scenario where the driving electrode pairs 31 and 32 are in contact with the substrate 1 , the substrate 1 is an insulating material, which does not affect the functions of the driving electrode pairs 31 and 32 .

[0097] In a specific implementation, the insulating layer used to form the electron tunneling junction 2 can be located at the lower layer of the driving electrode pair, so that Figure 8 and Fig. 9 After forming the insulating layer 20 covering the substrate 1, the driving electrode pairs 31 and 32 can be formed on the insulating layer 20. When the insulating layer 20 is soft-breakdowned by the voltage of the driving electrode pairs 31 and 32, since there is a voltage between the driving electrode pairs 31 and 32, only the insulating layer 20 under the gap between the driving electrode pairs 31 and 32 is soft-breakdowned without affecting the insulating layer 20 in other areas. Fig.10 and Fig.11 .in, Figure 8 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in the embodiment of the present application. Fig. 9 for Figure 8 A cross-sectional view of the on-chip micro electron source along the AA' direction, Fig.10 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in the embodiment of the present application. Fig.11 for Fig.10The cross-sectional view of the on-chip micro electron source along line AA' is shown.

[0098] In the embodiment of the present application, the method of forming the insulating layer 20 may be a thin film deposition process or a thermal oxidation process. For example: when the substrate 1 is a silicon substrate, the silicon substrate may be placed in a reaction tube, and the reaction tube may be heated to 800-1000°C to generate a silicon oxide layer on the surface of the silicon substrate, and the silicon oxide layer may be used as the insulating layer 20. The driving electrode pairs 31 and 32 may be formed by a thin film deposition process and a dissolution stripping technique. In order to make the insulating layer 20 in the gap between the driving electrode pairs 31 and 32 easy to be soft-broken, the width of the gap may be less than or equal to 10 microns. A smaller gap width is conducive to controlling the formation of a smaller width insulating region 21 in the electron tunneling junction 2, thereby ensuring that significant electron tunneling and electron emission can occur after applying a voltage greater than the surface barrier of the conductive region, and the insulating region 21 is not broken down by the voltage.

[0099] After the driving electrode pairs 31, 32 and the insulating layer 20 are formed, a voltage can be applied to the driving electrode pairs 31, 32, and the voltage value can be gradually increased. At the same time, the current size is monitored, and the current is limited to a certain current value, such as 100μA. When the current suddenly increases steeply, the voltage increase is stopped. At this time, the insulating layer 20 below the gap is softly broken down and exhibits a resistive switching characteristic. In this way, a conductive filament is formed in the insulating layer region that crosses the insulating layer 20 below the entire gap, so that the insulating layer region changes from an insulating state to a conductive state, and then after undergoing a transition from a low resistance state to a high resistance state, the conductive filament breaks, and an electron tunneling junction 2 is formed in the insulating layer region below the gap. The electron tunneling junction 2 is from the first driving electrode 31 to the second driving electrode 32, and includes the first conductive region 22, the insulating region 21, and the second conductive region 23 connected in sequence.

[0100] In order to improve the integration of the electron source, the driving electrode pair 31, 32 in the embodiment of the present application may include two opposing finger electrodes extending to the regional electrodes 311, 321 or outside the regional electrodes 321, 312, and each regional electrode 311, 321, 312 may include at least one finger electrode. Fig.12 A schematic diagram of the structure of an on-chip micro-electron source provided in an embodiment of the present application, Fig.13 For which Fig.12 A cross-sectional view of the on-chip micro electron source along the AA' direction, Fig.14 for Fig.12A partial enlarged view of the area in the dotted ellipse of the on-chip micro electron source in FIG. The regional electrodes 311, 312, 321 can be electrodes of larger area, and more finger electrodes can be extended outside the regional electrodes 311, 312, 321. The same voltage can be applied to the same regional electrode, so that different voltages can be applied to different regional electrodes 311, 312, 321, and two opposite finger electrodes extending from adjacent regional electrodes 311, 312, 321 can be used as driving electrode pairs 31, 32, and together with the electron tunneling junction 2 between the two finger electrodes 31, 32, form an electron emitter.

[0101] As an example, refer to Fig.12 As shown, a plurality of regional electrodes 311, 321, 312 may be formed on the insulating layer 20, each of the regional electrodes 311, 321, 312 may have a plurality of finger electrodes extending outward, the finger electrodes extending from adjacent regional electrodes may be arranged opposite to each other, two oppositely arranged finger electrodes may constitute a finger electrode pair, a finger electrode pair may be used as a driving electrode pair 31, 32, so that a plurality of driving electrode pairs 31, 32 may be arranged in an array, and the insulating layer between each driving electrode pair 31, 32 may be softly broken down to form an electron tunneling junction 2, the driving electrode pairs 31, 32 and the electron tunneling junctions 2 therebetween may form electron emitters, and a plurality of driving electrode pairs 31, 32 and a plurality of electron tunneling junctions 2 therebetween may form a plurality of electron emitters.

[0102] In order to improve the heat dissipation of the substrate 1, a heat dissipation component 10 may be provided under the substrate 1. Fig.15 and Fig.16 As shown, Fig.15 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in the embodiment of the present application. Fig.16 for Fig.15 The cross-sectional view of the on-chip micro-electron source along the AA' direction, for example, a heat sink can be arranged under the substrate, and the formed heat sink fits tightly with the substrate and forms good thermal contact, so that the heat generated by the on-chip micro-electron source during operation is dissipated in sequence through the driving electrode pair 31, 32, the insulating layer 20, the substrate 1 and the heat sink.

[0103] Since the driving electrode pair 31 and 32 only need to have a voltage difference, in order to facilitate the control of the integrated multiple electron emitters, two regional electrodes can be formed, which are used to connect high voltage and low voltage respectively. The shape of the regional electrode can be set arbitrarily, for example, one regional electrode surrounds another regional electrode, or two regional electrodes are arranged interlockingly. Those skilled in the art can also design more shapes that make the two regional electrodes have a larger relative area. In this way, multiple electron emitters can be controlled to work simultaneously, and electrons can be emitted from the multiple tunneling junctions, thereby forming a larger overall emission current and improving work efficiency.

[0104] refer to Fig.17 As shown, it is a schematic diagram of the structure of the on-chip micro-electron source in the manufacturing process in an embodiment of the present application. The regional electrode 311 and the regional electrode 312 are directly connected to form an irregularly shaped regional electrode. The same voltage can be applied, while the regional electrode 321 can be applied with another voltage. In this way, the relative finger electrodes of the regional electrode 311 and the regional electrode 321 can be used as a driving electrode pair, and the relative finger electrodes of the regional electrode 321 and the regional electrode 312 can also be used as a driving electrode pair.

[0105] S103, fixing a focusing electrode 4 above the substrate 1, wherein a focusing channel 41 is formed on the focusing electrode 4 and runs through the focusing electrode 4 in the longitudinal direction, and is used to reduce the beam spot size of the electron beam when the electron beam passes through. Figure 18-Figure 23 .

[0106] Based on the above description, it can be known that after voltage is applied to the driving electrode pair 31 and 32, electrons will be emitted from the position of the electron tunneling junction 2 between the first driving electrode 31 and the second driving electrode 31. When multiple electron emitters work at the same time, the number of emitted electrons will increase accordingly. However, the directions of electron beam emission are not the same. Especially when the number of electron emitters increases, the emitted electrons are also more dispersed. Therefore, the beam spot size of the electron beam is often larger, which will result in failure to meet actual needs in some scenarios.

[0107] In the embodiment of the present application, a focusing electrode 4 can be fixed above the substrate 1, and a focusing channel 41 is formed on the focusing electrode 4 and runs through the focusing electrode longitudinally, so as to reduce the beam spot size of the electron beam when the electron beam passes through. Fig.18 and Fig.19 As shown, Fig.18 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in the embodiment of the present application. Fig.19 for Fig.18A cross-sectional view of the on-chip micro electron source along the AA' direction in FIG. The focusing electrode 4 can be in any shape such as a flat plate, a filament, a coil, etc., and can be arranged parallel to the substrate 1 or not. Specifically, the focusing electrode 4 can be a conductor electrode or an insulating structure. Of course, a conductive layer is formed on the upper surface and / or the lower surface of the insulating structure so that the focusing electrode 4 can achieve the focusing function of the electron beam when a voltage is applied. The conductive layer can completely cover the upper surface and / or the lower surface of the insulating structure, and its properties can also be designed according to actual conditions to improve the safety of the device without affecting the function of the focusing electrode 4.

[0108] In actual work, since electrons are negatively charged, a negative voltage relative to the potential of the driving electrode can be applied to the focusing electrode 4, so that when the electron beam passes through the focusing channel 41 in the focusing electrode 4, the focusing electrode 4 will repel the electron beam, so that the electron beam is gathered toward the center of the focusing channel 41 by the electric field force, thereby reducing the beam spot size of the electron beam. In the embodiment of the present application, the focusing electrode 4 has a repelling effect on the electron beam, thereby realizing the focusing function. Therefore, when designing the voltage applied by the focusing electrode 4, the emission efficiency and beam spot size of the electron beam can be taken into account, thereby seeking a suitable voltage.

[0109] The focusing electrode 4 may be provided with a focusing channel 41 which runs through the focusing electrode longitudinally, so that the beam spot size of the electron beam can be reduced when passing through the focusing channel 41. It should be noted that the focusing channel 41 may be any shape that electrons can pass through, such as a hole, a linear slit, an annular slit, etc. The focusing channel 41 has the function of defining the shape of the electron beam, and therefore may be specifically designed according to the requirements of the shape of the electron beam in practical applications. As a specific example, the focusing channel 41 may be a hole, and the hole may be circular. If the focusing channel 41 is used to limit the size of the beam spot, the focusing electrode 4 should generally be applied with a positive voltage relative to the potential of the driving electrode, so that the interception of the emission current by the focusing electrode 4 can be weakened.

[0110] In order to allow the electrons emitted from the electron source to better pass through the focusing channel 41 of the focusing electrode 4, the focusing channel 41 can be opposite to the position of the electron emitter. When multiple electron emitters work at the same time, the focusing channel 41 can be directly opposite to the multiple electron emitters, wherein the size of the focusing channel 41 is slightly smaller than the size of the area where the multiple electron emitters are located, so that the electrons emitted by the multiple electron emitters can smoothly pass through the focusing channel 41 of the focusing electrode 4.

[0111] It should be noted that Fig.18 , Fig.19 The electron source in the figure is an exemplary description for explaining the relative positions of the substrate on which the electron emitter is formed and the focusing electrode. In fact, the electron source may also include Figure 3-Figure 17 Except for Fig.18 , Fig.19 Other forms of electron sources and focusing electrodes thereon besides the electron source shown are not illustrated one by one here.

[0112] In a specific implementation, the focusing electrode 4 can be fixed on the substrate 1. Specifically, the first supporting member 5 can be formed on the substrate 1, and then the focusing electrode 4 is formed on the first supporting member 5. The first supporting member 5 can be bonded to the substrate 1 or bonded to the substrate 1, and the focusing electrode 4 can be bonded to the first supporting member 5 or bonded to the first supporting member 5. Specifically, a bonding method such as anodic bonding or a bonding method using an adhesive can be used.

[0113] As a possible implementation, the first support member 5 may be a support between the focusing electrode 4 and the substrate 1, or may be a wall between the focusing electrode 4 and the substrate 1, see Fig. 20 and Fig.21 As shown, Fig. 20 This is a schematic diagram of the structure of the on-chip micro-electron source during the manufacturing process in the embodiment of the present application. Fig.21 for Fig. 20 In the cross-sectional view of the on-chip micro electron source along the AA' direction, the first support member 5 can surround the driving electrode pair 31, 32 and the electron tunneling junction 2 on the substrate, so that the emitted electron beam is surrounded by the focusing electrode 4, the substrate 1 and the first support member 5. The first support member 5 can be an insulating structure, and when the focusing electrode 4 is an insulating structure, the first support member 5 and the focusing electrode 4 can be an integrated structure.

[0114] In a specific implementation, if a heat dissipation component 10 is formed under the substrate 1 , the focusing electrode 4 may also be fixed on the heat dissipation component 10 .

[0115] The number of focusing electrodes can be determined according to actual conditions. If the required electron beam spot size is small, multiple focusing electrodes 4 and 6 can be set to focus the electron beam. The focusing channels 41 and 61 of the multiple focusing electrodes 4 and 6 are directly opposite in the longitudinal direction, so that the light emitted from the focusing channel 61 of the lower focusing electrode 6 enters the focusing channel 41 of the upper focusing electrode 4. In specific implementation, if multiple focusing electrodes are included, the size of the focusing channel can be reduced from bottom to top, so that the beam spot size of the electron beam passing through the focusing channel is gradually reduced.

[0116] When the focusing electrode has multiple focusing channels, the upper focusing electrode 4 can be fixed on the lower focusing electrode 6 or on the substrate 1. For example, multiple focusing electrodes can be fixed on the electrode in sequence through multiple sub-support components, and the multiple sub-support components constitute the first support component 5; multiple focusing electrodes can also be fixed on one support component, and the support component serves as the first support component 5, so that multiple focusing electrodes can be fixed on the substrate 1 by using this one support component.

[0117] When a plurality of focusing electrodes are fixed to the electrode in sequence by a plurality of sub-supporting members, in order to facilitate the connection of voltage to the focusing electrodes 4 and 6, the edges of the focusing electrodes 4 and 6 may be exposed to the outside of the first supporting member 5. Fig. 22 and Fig.23 As shown, Fig.23 for Fig. 22 A cross-sectional view of the on-chip micro electron source along the AA' direction; or the focusing electrodes 4, 6 may have lead ends, which are exposed to the outside of the first supporting member 5, and the material of the lead ends may be a conductive material or an insulating material, and a conductive layer is formed on the insulating material, and the conductive layer can be used to power the focusing electrode 4.

[0118] The edges of the plurality of focusing electrodes 4 and 6 exposed on the outside of the first supporting member 5 may be in a stepped structure, that is, the area of ​​the upper focusing electrode 4 is smaller than the area of ​​the lower focusing electrode 6, so that the stepped surface of each focusing electrode is exposed, so that the exposed stepped surface can be used to apply voltage to the focusing electrodes 4 and 6. Fig. 22 shown.

[0119] Of course, in order to facilitate the application of voltage to the driving electrode pairs 31 and 32, the driving electrode pairs 31 and 32 also need to be exposed to the outside of the first supporting structure 5. When the driving electrode pairs 31 and 32 are finger electrodes on the regional electrodes, lead ends can be set on the regional electrodes, and the lead ends are exposed to the outside of the first supporting structure 5. In this way, voltage can be applied to the regional electrode pairs 31 and 32 through the lead ends, so that the corresponding driving electrode pairs 31 and 32 have voltage.

[0120] The present application provides an on-chip micro electron source, including a substrate, a driving electrode pair formed on the substrate, a gap between the driving electrode pairs, an electron tunneling junction formed in the gap, the driving electrode pair can be used to drive the electron tunneling junction to emit an electron beam, a focusing electrode can be fixed above the substrate, a focusing channel is formed on the focusing electrode and longitudinally penetrates the focusing electrode, and is used to reduce the beam spot size of the electron beam when the electron beam passes through. That is to say, in the embodiment of the present application, the driving electrode can be used to drive the electron tunneling junction to emit an electron beam, and the electron tunneling junction does not need to pass through multiple material layers, and has a higher emission efficiency. The electron beam can be gathered by the focusing electrode, thereby reducing the beam spot size of the electron beam, thereby obtaining an electron beam with a large emission current and a small beam spot size.

[0121] In addition, the inventors have found through research that the distance between the driving electrode pair 31 and 32 is usually small, and when the electrons are emitted, the driving electrode pair 31 and 32 are applied with a voltage, which results in a strong transverse electric field between the two electrodes of the driving electrode pair 31 and 32. Therefore, when the electrons are emitted from the electron tunneling junction 2 between the driving electrodes 31 and 32, they are affected by a strong electric field force, which guides most of the emitted electrons to the side of the electrode with a higher potential in the driving electrode pair 31 and 32 and is intercepted by the electrode. Fig.24 As shown, a schematic diagram of the operation of an on-chip micro electron source is provided for an embodiment of the present application. This causes the electrons to be intercepted by the driving electrode 32 after being emitted from the solid material (electron tunneling junction) and then returned to the solid material (driving electrode), thereby making the effective emission efficiency and current of the electrons relatively small, which cannot meet the requirements of many practical applications. Moreover, if the voltage of the focusing electrode 4 is negative, the effective emission efficiency of the electrons is also reduced to a certain extent under the premise of reducing the beam spot size of the electron beam.

[0122] Therefore, in the embodiment of the present application, the extraction electrode 8 can also be fixed between the focusing electrode 4 and the electron emitter, that is, the extraction electrode 8 can be fixed before the focusing electrode 4 is fixed, and then the focusing electrode 4 is fixed above the extraction electrode 8. The extraction electrode 8 can provide an electron accelerating electric field for the electron beam, so that the electrons are subjected to the electric field force of the extraction electrode 8 and can be emitted away from the surface of the substrate 1, thereby avoiding being intercepted by the driving electrode.

[0123] The extraction electrode 8 may be in any shape such as a flat plate, a filament, or a coil, and may be arranged parallel to the substrate or not. Specifically, the extraction electrode 8 may be a conductor electrode or an insulating structure, and of course, a conductive layer is formed on the upper surface and / or the lower surface of the insulating structure so that the extraction electrode 8 can apply a voltage to provide an electron extraction electric field.

[0124] In order to realize the operation of the electron source, a first voltage V1 is applied between the driving electrodes 31 and 32 to drive the electrons to be emitted from the electron emitter into the vacuum; at the same time, a second voltage V2 is applied to the extraction electrode 8 so that the electrons are not intercepted by the driving electrodes 31 and 32, and thus are emitted away from the substrate 1. Generally speaking, to ensure a good electron extraction effect, V2 should be greater than V1, and the required size of V2 increases with the increase in the distance between the extraction electrode 8 and the substrate 1.

[0125] The extraction electrode 8 may be provided with an extraction channel 81 that vertically penetrates the extraction electrode 8, so that the electron beam is attracted by the extraction electrode 8 and then emitted from the extraction channel 81 to the space above the extraction electrode 8. It should be noted that the extraction channel 81 of the extraction electrode 8 in this embodiment may be any shape that allows electrons to pass through the extraction electrode 8, such as a hole, a linear slit, an annular slit, etc., or any number of holes arranged in any form. The extraction channel 81 has the function of defining the shape of the electron beam, and therefore may be specifically designed according to the requirements of the specific application for the shape of the electron beam.

[0126] For example, at least one hole can be provided on the extraction electrode 8 as an extraction channel 81, and multiple holes are more conducive to the extraction of electrons from the on-chip micro-electron source to the external space. In fact, the solution of providing one hole on the extraction electrode 8 is also within the scope of protection of this application. The hole on the extraction electrode 8 can be set to different shapes according to process conditions and needs. As a specific example, the hole is set to be circular.

[0127] In order to allow the electrons emitted from the electron source to better pass through the extraction channel 81 of the extraction electrode 8, the position of the extraction channel 81 can be opposite to the position of the electron emitter, and the focusing channel 41 of the focusing electrode 4 is opposite to the position of the extraction channel 81, so that the electron beam can be gathered and emitted by the focusing electrode 4 after being accelerated by the extraction electrode 8. That is to say, when the micro electron source is working, a positive voltage can be applied to the extraction electrode 8, so that the electrons are accelerated by the extraction electrode 8 and are led out to the external space through the extraction channel 81, and a negative voltage is applied to the focusing electrode 4, so that the electron beam is focused and then emitted through the focusing channel 41. The emitted electron beam has higher energy and smaller beam spot size. Of course, different voltages are applied to the extraction electrode 8 and the focusing electrode 4, respectively, so the two are fixed on the substrate respectively without any contact.

[0128] In a specific implementation, the extraction electrode 8 can be fixed on the substrate 1. Specifically, a second support member 9 can be formed on the substrate 1, and then the extraction electrode 8 is formed on the second support member 9. The second support member 9 can be bonded to the substrate 1 or bonded to the substrate 1. The second support member can be a pillar between the extraction electrode 8 and the substrate 1, or a wall between the extraction electrode 8 and the substrate 1. Fig. 22and Fig.23 As shown. Since the extraction electrode 8 is arranged below the focusing electrode 4, the second supporting member 9 can be arranged inside the first supporting member 5, or can be used as a part of the first supporting member 5, and the second supporting member 9 can support the extraction electrode 8 and the focusing electrode 4 at the same time.

[0129] The second supporting member 9 may be an insulating structure. When the extraction electrode 8 is an insulating structure, the second supporting member 9 and the focusing electrode 8 may be an integrated structure.

[0130] In a specific implementation, if a heat dissipation component 10 is formed under the substrate 1 , the lead-out electrode 8 may also be fixed on the heat dissipation component 10 .

[0131] The edge of the lead-out electrode 8 may be exposed to the outside of the first supporting member 5 and the second supporting member 9. Fig. 22 and Fig.23 Alternatively, the lead electrode 8 may have a lead end, which is exposed to the outside of the first supporting member 5 and the second supporting member 9. The lead end may be made of a conductive material or an insulating material. A conductive layer is formed on the insulating material, and the conductive layer can be used to power the lead electrode 8.

[0132] The edge of the lead-out electrode 8 exposed outside the first supporting component 5 can form a step structure with the edge of the focusing electrode 4, that is, the area of ​​the lead-out electrode 8 is larger than the area of ​​the focusing electrode 4. When there are multiple focusing electrodes, the edges of the multiple focusing electrodes 4 and 6 exposed outside the first supporting component 5 also present a step structure, which is convenient for applying voltage to the lead-out electrode 8 and the focusing electrode 4 on the exposed step surface.

[0133] Of course, in order to facilitate the application of voltage to the driving electrodes 31 and 32, the driving electrodes 31 and 32 also need to be exposed to the outside of the second supporting structure 9 and the first supporting structure 5. When the driving electrodes 31 and 32 are finger-shaped electrodes on the regional electrodes, lead-out ends can be set on the regional electrodes, and the lead-out ends are exposed to the outside of the second supporting structure 9 and the first supporting structure 5. In this way, voltage can be applied to the regional electrodes through the lead-out ends, so that the corresponding driving electrodes 31 and 32 have voltage.

[0134] An embodiment of the present application provides an on-chip micro-electron source, including a substrate, a driving electrode pair formed on the substrate, a gap between the driving electrode pairs, an electron tunneling junction formed in the gap, the driving electrode pair can be used to drive the electron tunneling junction to emit an electron beam, an extraction electrode can be fixed above the substrate to provide an electron accelerating electric field for the electron beam, thereby improving the electron emission efficiency and obtaining a larger emission current, and a focusing electrode can also be fixed above the extraction electrode to reduce the beam spot size of the electron beam, so that the emission current can be increased while reducing the beam spot size of the electron beam.

[0135] In addition, since the electron source in the present invention is processed on the surface of the chip, it is usually difficult to directly connect the electron source with the external circuit in a traditional wiring manner. In order to facilitate the connection between the electron source in the present invention and the external circuit, the electron source can be set on the base 11 in this embodiment to form an electron source system. Fig.25 , which is a schematic diagram of an electron source system provided in an embodiment of the present application. The base 11 can provide support for the micro electron source and provide a power connection port for the micro electron source. Specifically, the base 11 has a component 111 (such as a terminal, a pin, a pinhole, etc.) that can be electrically connected to a general external circuit, and also has a component 112 (such as a welding wire) that can be connected to each electrode of the electron source (including a driving electrode, an extraction electrode, and a focusing electrode), thereby realizing circuit switching between the electron source and the external circuit.

[0136] The base 11 has a certain number of components 111 that can be electrically connected to a general external circuit, and also has a certain number of components 112 that can be connected to the electrodes of the electron source, wherein the components 111 and 112 are electrically connected. The component 111 can be a terminal, a pin, or a pinhole. The component 112 can be a metal welding wire, which can be connected to the electrodes of the electron source (including the driving electrode, the extraction electrode, and the focusing electrode) by ultrasonic spot welding.

[0137] In order to provide voltage drive and control for the electron source, the present embodiment may further provide a control module 12 for the electron source. The control module 12 may be connected to the power connection port on the base 11 to supply power to the micro electron source and regulate the voltages of the drive electrode, the extraction electrode, and the focusing electrode. Fig.26 , which is a schematic diagram of another electron source system provided in an embodiment of the present application. Specifically, the control module 12 may include a voltage input terminal 121 and a plurality of voltage output terminals 122, each voltage output terminal 122 corresponds to an electrode of each electron source (including a driving electrode, an extraction electrode, and a focusing electrode), and is connected to these electrodes through the base 11. Each voltage output terminal 122 outputs a voltage according to the working requirements of the electron source.

[0138] It should be noted that Fig.25 , Fig.26 The electron source system in the figure is an exemplary description for explaining the relative positions of the electron source and the focusing electrode. In fact, the electron source system may also include Figure 3-Figure 23 Except for Fig. 20 Other electron sources besides the electron source shown are not illustrated one by one here.

[0139] The embodiment of the present application also provides an electronic device, which includes at least the above-mentioned micro electron source or electron source system, so as to provide electron beams for other components of the electronic device. The electronic device may include at least one of the following devices: medical X-ray equipment, X-ray nondestructive testing equipment, X-ray fluorescence testing equipment, sterilization and disinfection equipment, vacuum measurement and leak detection equipment, ion electric propulsion equipment, electron beam detection and imaging equipment, mass spectrometer, high-power microwave source, electric vacuum device, smart phone, computer.

[0140] Based on the manufacturing method of an on-chip micro-electronic source provided in the above embodiment, the embodiment of the present application further provides an on-chip micro-electronic source, comprising:

[0141] substrate;

[0142] A pair of driving electrodes on the substrate; a gap exists between the pair of driving electrodes, and an electron tunneling junction is formed in the gap; the pair of driving electrodes is used to drive the electron tunneling junction to emit an electron beam;

[0143] A focusing electrode is fixed above the substrate, and a focusing channel is formed on the focusing electrode and runs through the focusing electrode longitudinally, so as to reduce the beam spot size of the electron beam when the electron beam passes through.

[0144] Optionally, the focusing electrode is a metal electrode; or the focusing electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or lower surface of the insulating structure.

[0145] Optionally, a first supporting member is formed between the focusing electrode and the substrate.

[0146] Optionally, when the focusing electrode is an insulating structure, the insulating structure and the first supporting component are an integrated structure.

[0147] Optionally, the first supporting component is a side wall located outside the focusing electrode, and the focusing electrode and the driving electrode have conductive ends extending to the outside of the first supporting component.

[0148] Optionally, there are multiple focusing electrodes, and the multiple focusing electrodes are arranged vertically.

[0149] Optionally, a plurality of the focusing electrodes form a step structure.

[0150] Optionally, also include:

[0151] The extraction electrode fixed between the substrate and the focusing electrode is used to provide an electron accelerating electric field for the electron beam; an extraction channel is formed on the extraction electrode and vertically penetrates the extraction electrode.

[0152] Optionally, the lead-out electrode is a metal electrode; or the lead-out electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or lower surface of the insulating structure.

[0153] Optionally, a second supporting component is formed between the extraction electrode and the substrate.

[0154] Optionally, when the lead-out electrode is an insulating structure, the insulating structure and the second supporting structure are an integrated structure.

[0155] Optionally, the second supporting component is a side wall located outside the extraction electrode, and the extraction electrode and the driving electrode have conductive ends extending to the outside of the second supporting component.

[0156] Optionally, the extraction electrode and the focusing electrode form a step structure.

[0157] Optionally, the driving electrode pair is in contact with the substrate, the electron tunneling junction is formed in an insulating layer, and the insulating layer is formed between the driving electrode pair.

[0158] Optionally, an insulating layer is formed between the driving electrode pair and the substrate, and an electron tunneling junction is formed in the insulating layer directly facing the gap between the driving electrode pair.

[0159] Optionally, the material of the insulating layer is one or more of the following materials: silicon oxide, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, magnesium oxide, yttrium oxide, scandium oxide, germanium oxide, lanthanum oxide, strontium oxide, calcium oxide, barium oxide, titanium oxide, strontium titanate, lanthanum aluminate, silicon nitride, aluminum nitride, silicon carbide, diamond and amorphous carbon.

[0160] Optionally, the driving electrode pair includes two opposing finger electrodes extending outside the two regional electrodes, and each of the regional electrodes includes at least one finger electrode.

[0161] Optionally, a heat sink is formed under the substrate.

[0162] Optionally, the electrode material of the driving electrode is one or more of the following materials: metal, graphene and carbon nanotube.

[0163] Optionally, the width of the gap is less than or equal to 10 microns.

[0164] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. The micro-electron source embodiment can refer to the description in the micro-electron source manufacturing method embodiment.

[0165] The above is only a preferred implementation of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still falls within the scope of protection of the technical solution of the present application.

Claims

1. An on-chip micro electron source, characterized in that: include: substrate; a pair of driving electrodes on the substrate; There is a gap between the driving electrode pairs, and an electron tunneling junction is formed in the gap; The driving electrode pair is used to drive the electron tunneling junction to emit an electron beam; A focusing electrode fixed above the substrate, wherein a focusing channel is formed on the focusing electrode and runs through the focusing electrode longitudinally, and is used to reduce the beam spot size of the electron beam when the electron beam passes through; A first supporting component is formed between the focusing electrode and the substrate; the first supporting component is a side wall located outside the focusing electrode, and the focusing electrode and the driving electrode have conductive ends extending to the outside of the first supporting component; An extraction electrode fixed between the substrate and the focusing electrode, used to provide an electron accelerating electric field for the electron beam; The lead-out electrode is provided with a lead-out channel which vertically penetrates the lead-out electrode; A second supporting component is formed between the extraction electrode and the substrate; the second supporting component is a side wall located outside the extraction electrode, and the extraction electrode and the driving electrode have conductive ends extending to the outside of the second supporting component; There are multiple focusing electrodes, and the multiple focusing electrodes are arranged vertically. The extraction electrode is located between the focusing electrode and the electron tunneling junction. The extraction electrode and the multiple focusing electrodes form a step structure. The area of ​​the upper layer of focusing electrodes is smaller than the area of ​​the lower layer of focusing electrodes, so that the exposed step surface of the focusing electrode is used to apply a voltage to the focusing electrode. The area of ​​the extraction electrode is larger than the area of ​​the focusing electrode, and the exposed step surface of the extraction electrode is used to apply a voltage to the extraction electrode.

2. The micro electron source according to claim 1, characterized in that: The focusing electrode is a metal electrode; or the focusing electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or the lower surface of the insulating structure.

3. The micro electron source according to claim 2, characterized in that: When the focusing electrode is an insulating structure, the insulating structure and the first supporting component are an integrated structure.

4. The micro electron source according to claim 1, characterized in that: The lead-out electrode is a metal electrode; or the lead-out electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or the lower surface of the insulating structure.

5. The micro electron source according to claim 4, characterized in that: When the lead-out electrode is an insulating structure, the insulating structure and the second supporting component are an integrated structure.

6. The micro electron source according to claim 1, characterized in that: The driving electrode pair is in contact with the substrate, the electron tunneling junction is formed in an insulating layer, and the insulating layer is formed between the driving electrode pair.

7. The micro electron source according to claim 1, characterized in that: An insulating layer is formed between the driving electrode pair and the substrate, and an electron tunneling junction is formed in the insulating layer directly facing the gap between the driving electrode pair.

8. The micro electron source according to claim 6 or 7, characterized in that: The material of the insulating layer is one or more of the following materials: silicon oxide, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, magnesium oxide, yttrium oxide, scandium oxide, germanium oxide, lanthanum oxide, strontium oxide, calcium oxide, barium oxide, titanium oxide, strontium titanate, lanthanum aluminate, silicon nitride, aluminum nitride, silicon carbide, diamond and amorphous carbon.

9. The micro electron source according to claim 1, characterized in that: The driving electrode pair includes two opposing finger electrodes extending beyond two regional electrodes, and each of the regional electrodes includes at least one finger electrode.

10. The micro electron source according to claim 1, characterized in that: A heat sink is also formed under the substrate.

11. The micro electron source according to claim 1, characterized in that: The electrode material of the driving electrode is one or more of the following materials: metal, graphene and carbon nanotube.

12. The micro electron source according to claim 1, characterized in that: The width of the gap is less than or equal to 10 micrometers.

13. An electron source system, characterized in that: It comprises a base and the micro-electron source described in any one of claims 1 to 12; the base is used to provide support for the micro-electron source and provide a power connection port for the micro-electron source.

14. The system according to claim 13, characterized in that The electron source system further comprises a control module; the control module is connected to the power connection port and is used to supply power to the micro electron source.

15. A method for manufacturing an on-chip micro electron source, characterized in that: include: providing a substrate; forming a pair of driving electrodes on the substrate, with a gap between the pair of driving electrodes and an electron tunneling junction formed in the gap; The driving electrode pair is used to drive the electron tunneling junction to emit an electron beam; An extraction electrode is fixed on the substrate, the extraction electrode is used to provide an electron accelerating electric field for the electron beam, and an extraction channel is formed on the extraction electrode and vertically penetrates the extraction electrode; A focusing electrode is fixed above the substrate, wherein a focusing channel is formed on the focusing electrode and longitudinally penetrates the focusing electrode, and is used to reduce the beam spot size of the electron beam when the electron beam passes through; The fixing of the focusing electrode on the substrate comprises: forming a first supporting component on the substrate; forming the focusing electrode on the first supporting component; the first supporting component is a side wall located outside the focusing electrode, and the focusing electrode and the driving electrode have conductive ends extending to the outside of the first supporting component; The method of fixing the extraction electrode on the substrate comprises: forming a second supporting component on the substrate; forming the extraction electrode on the second supporting component; the second supporting component is a side wall located outside the extraction electrode, and the extraction electrode and the driving electrode have conductive ends extending to the outside of the second supporting component; There are multiple focusing electrodes, and the multiple focusing electrodes are arranged vertically. The extraction electrode is located between the focusing electrode and the electron tunneling junction. The extraction electrode and the multiple focusing electrodes form a step structure. The area of ​​the upper layer of focusing electrodes is smaller than the area of ​​the lower layer of focusing electrodes, so that the exposed step surface of the focusing electrode is used to apply a voltage to the focusing electrode. The area of ​​the extraction electrode is larger than the area of ​​the focusing electrode, and the exposed step surface of the extraction electrode is used to apply a voltage to the extraction electrode.

16. The method according to claim 15, characterized in that The focusing electrode is a metal electrode; or the focusing electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or the lower surface of the insulating structure.

17. The method according to claim 15, characterized in that The lead-out electrode is a metal electrode; or the lead-out electrode is an insulating structure, and a conductive layer is formed on the upper surface and / or the lower surface of the insulating structure.

18. The method according to claim 15, characterized in that The method further comprises: A heat sink is formed below the substrate and contacts the substrate.

19. An electronic device, characterized in that: At least comprises the micro electron source as described in any one of claims 1 to 12, or the electron source system as described in any one of claims 13 to 14.

20. The electronic device according to claim 19, characterized in that: The electronic equipment includes at least one of the following equipment: medical X-ray equipment, X-ray non-destructive testing equipment, X-ray fluorescence testing equipment, sterilization and disinfection equipment, vacuum measurement and leak detection equipment, ion electric propulsion equipment, electron beam detection and imaging equipment, mass spectrometer, high-power microwave source, electric vacuum device, smart phone, computer.

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