Complementary pattern station design

Abstract

Apparatus and methods for processing one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide a second gas flow pattern that is complementary to the first gas flow pattern.

Description

Technical Field

[0001] The present disclosure generally relates to apparatus and methods for processing wafers. In particular, the present disclosure relates to a processing chamber that provides complementary patterns at each processing station. Background Art

[0002] Current atomic layer deposition (ALD) processes have many potential problems and difficulties. Many ALD chemistries (e.g., precursors and reactants) are "incompatible," meaning that the chemicals cannot be mixed together. If incompatible chemicals are mixed together, a chemical vapor deposition (CVD) process may occur instead of an ALD process. CVD processes typically have less thickness control than ALD processes and / or can result in the creation of gas phase particles, which can cause defects in the resulting device. For traditional time-domain ALD processes that flow one reactive gas into the process chamber at a time, long purge / evacuation times occur so that the chemicals do not mix in the gas phase. Spatial ALD chambers can move one or more wafers from one environment to a second environment faster than a time-domain ALD chamber can evacuate / purge, resulting in higher throughput.

[0003] In some applications, the semiconductor industry requires high-quality films that can be deposited at lower temperatures (e.g., below 350°C). In order to deposit high-quality films at lower temperatures than the case where the film is deposited only by thermal methods, alternative energy sources are needed. Plasma schemes can be used to provide additional energy to the ALD film in the form of ions and radicals. The difficulty lies in obtaining sufficient energy on the vertical sidewall ALD film. The ions are typically accelerated through a sheath above the wafer surface in a direction perpendicular to the wafer surface. Therefore, the ions provide energy to the horizontal ALD film surface, but the energy provided to the vertical surface is insufficient because the ions move parallel to the vertical surface. In order to obtain high sidewall film quality, very high RF (VHF) plasma or microwave plasma is used. These plasma sources provide higher plasma density to obtain better film quality, but have the disadvantage of poor plasma uniformity.

[0004] Current spatial ALD processing chambers rotate multiple wafers on a heated circular platform at a constant speed, which moves the wafers from one processing environment to an adjacent environment. Different processing environments induce separation of incompatible gases. However, current spatial ALD processing chambers cannot achieve high-quality ALD films due to gas flow non-uniformity, temperature non-uniformity, and / or plasma non-uniformity, resulting in thickness non-uniformity, plasma damage, and / or processing flexibility issues.

[0005] In current spatial ALD deposition tools (or other spatial processing chambers), the main deposition step occurs when the wafer is stationary in a processing station that simulates a single wafer chamber, and the operating method generally involves moving the wafer to more than one station of the same type, so that gas flow non-uniformity, temperature non-uniformity, and / or plasma exposure non-uniformity of the processing stations lead to high film non-uniformity. Therefore, there is a need in the art for improved deposition equipment and methods. Summary of the invention

[0006] One or more embodiments of the present disclosure are directed to a processing chamber. In one embodiment, the processing chamber comprises: a first processing station having a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater; and a second processing station having a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater, the second gas diffuser, the second cooling channel pattern, or the second heater being rotated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide a second gas flow pattern complementary to the first gas flow pattern.

[0007] Additional embodiments of the present disclosure relate to film forming methods. In one or more embodiments, the method of forming a film includes: loading at least one wafer onto a substrate support surface; rotating the substrate support surface between a first processing station and a second processing station, the first processing station having a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater, and the second processing station having a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater, the second gas diffuser, the second cooling channel pattern, or the second heater being rotated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide a second gas flow pattern complementary to the first gas flow pattern; and at each processing station, exposing the top surface of the wafer to processing conditions to form a film having a substantially uniform thickness.

[0008] One or more embodiments are directed to a plasma processing chamber comprising: a first plasma processing station having a first plasma pixel pattern from a first plasma source, the first plasma source having a symmetric pixel pattern with n-fold symmetry; and a second plasma processing station having a second plasma pixel pattern from a second plasma source, the second plasma source having a symmetric pixel pattern with n-fold symmetry and rotated relative to the first plasma source to provide a second plasma pixel pattern complementary to the first plasma pixel pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to be able to understand in detail the manner in which the above-mentioned features of the present disclosure are used, a more particular description of the present disclosure briefly summarized above may be obtained by reference to the embodiments, some of which are shown in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure and are therefore not to be considered as limiting the scope of the present disclosure, as the present disclosure may admit to other equally effective embodiments.

[0010] Figure 1 A process flow diagram depicting one embodiment of a method of forming a thin film according to embodiments described herein;

[0011] Figure 2A shows a heating coil according to an embodiment described herein;

[0012] Figure 2B The embodiment described herein is shown Figure 2A A heating coil complementary to a heating coil;

[0013] Figure 3A shows a cooling channel according to an embodiment described herein;

[0014] Figure 3B The embodiment described herein is shown Figure 3A The cooling coils are complementary to the cooling channels;

[0015] Figure 4A depicts a plasma source having a pixel pattern according to one or more embodiments;

[0016] Figure 4B depicts a plasma source having a pixel pattern according to one or more embodiments;

[0017] Figure 4C depicts a complementary plasma pixel pattern according to one or more embodiments;

[0018] Figure 5A depicts a plasma source having a pixel pattern according to one or more embodiments;

[0019] Figure 5B depicts a plasma source having a pixel pattern according to one or more embodiments;

[0020] Figure 5C depicts a complementary plasma pixel pattern according to one or more embodiments;

[0021] Fig. 6A depicts a plasma source having a pixel pattern according to one or more embodiments;

[0022] Figure 6Bdepicts a plasma source having a pixel pattern according to one or more embodiments;

[0023] Figure 6C depicts a complementary plasma pixel pattern according to one or more embodiments;

[0024] Fig. 7A depicts a plasma source having a pixel pattern according to one or more embodiments;

[0025] Figure 7B depicts a plasma source having a pixel pattern according to one or more embodiments;

[0026] Figure 7C depicts a complementary plasma pixel pattern according to one or more embodiments;

[0027] Fig. 8A depicts a plasma source having a pixel pattern according to one or more embodiments;

[0028] Figure 8B depicts a plasma source having a pixel pattern according to one or more embodiments;

[0029] Figure 8C depicts a complementary plasma pixel pattern according to one or more embodiments;

[0030] Fig. 9A depicts a plasma source having a pixel pattern according to one or more embodiments;

[0031] Fig. 9B depicts a plasma source having a pixel pattern according to one or more embodiments;

[0032] Fig. 9C depicts a complementary plasma pixel pattern according to one or more embodiments;

[0033] Fig. 10A depicts a plasma source having a pixel pattern according to one or more embodiments;

[0034] Fig. 10B depicts a plasma source having a pixel pattern according to one or more embodiments;

[0035] Fig. 10C depicts a complementary plasma pixel pattern according to one or more embodiments;

[0036] Fig.11A depicts a plasma source having a pixel pattern according to one or more embodiments;

[0037] Fig. 11Bdepicts a plasma source having a pixel pattern according to one or more embodiments;

[0038] Fig. 11C depicts a complementary plasma pixel pattern according to one or more embodiments;

[0039] Fig.12 illustrates a cross-sectional isometric view of a processing chamber according to one or more embodiments of the present disclosure;

[0040] Fig.13 illustrates a cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure;

[0041] Fig.14 is an exploded cross-sectional view of a processing station according to one or more embodiments of the present disclosure;

[0042] Fig.15 is a schematic representation of a processing platform according to one or more embodiments of the present disclosure; and

[0043] Fig.16A and Fig. 16B A schematic representation of a process in accordance with one or more embodiments of the present disclosure is illustrated. DETAILED DESCRIPTION

[0044] Before describing several exemplary embodiments of the present disclosure, it should be understood that the present disclosure is not limited to the details of construction or processing steps set forth in the following description. The present disclosure is capable of other embodiments and can be practiced or carried out in various ways.

[0045] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which film processing is performed during a manufacturing process. For example, substrate surfaces on which processing can be performed include materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials, such as metals, metal nitrides, metal alloys and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. The substrate can be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal and / or bake the substrate surface. In addition to performing film processing directly on the surface of the substrate itself, in the present disclosure, any film processing step disclosed can also be performed on an underlying layer formed on the substrate, as disclosed in more detail below, and the term "substrate surface" is intended to include such an underlying layer as indicated by the context. Thus, for example, in the case where a film / layer or a portion of a film / layer has been deposited onto a substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0046] As used in this specification and the appended claims, the terms "precursor", "reactant", "reactant gas", etc. are used interchangeably to refer to any gaseous species that can react with the substrate surface or with a film formed on the substrate surface. As used in this specification and the appended claims, the terms "plasma pixel", "plasma source", etc. are used interchangeably to refer to any independently controlled plasma generating element on a plasma processing station.

[0047] One or more embodiments of the present disclosure utilize a processing tool in which the primary processing steps occur while the wafer is stationary in a processing station that simulates a single wafer chamber. In one or more embodiments, the method of operation includes moving the substrate support surface to more than one station of the same type, wherein two stations are advantageously designed such that they complement each other in some manner, thereby improving uniformity of film thickness and other film properties across the wafer.

[0048] One or more embodiments of the present disclosure relate to a processing chamber having at least two spatially separated processing environments (also referred to as processing stations). Some embodiments have more than two and some embodiments have more than four processing stations. The processing environment can be installed to be coplanar with a wafer moving in a horizontal plane. The processing environment is placed in a circular arrangement. A rotatable structure on which one to four (or more) independent wafer heaters are installed moves the wafer along a circular path, the diameter of the circular path being similar to the processing environment. Each heater can be temperature controlled and can have one or more concentric areas. In order to load the wafer, the rotatable structure can be lowered so that a vacuum robot can pick up a completed wafer and place an unprocessed wafer on a lift pin located above each wafer heater (at a lower Z position). In operation, each wafer can be in an independent environment until the process is completed, and then the rotatable structure can be rotated (90° for four stations and 120° for three stations) to move the wafer on the heater to the next environment for processing.

[0049] In a spatial ALD deposition tool (or other spatial processing chamber), a wafer is moved into a first processing station and then subsequently moved to a second processing station. In some cases, the first processing station and the second processing station are identical, resulting in a lack of uniformity in film thickness and a lack of uniformity in the deposition properties of the film (e.g., refractive index, wet etch rate, in-plane displacement, etc.).

[0050] One or more embodiments advantageously provide a processing chamber wherein different stations in a processing tool (eg, a space tool) are designed to result in improved uniformity of film thickness, as well as improved uniformity of refractive index, wet etch rate, and in-plane displacement of deposited films.

[0051] Figure 1A flow chart of a method 10 of depositing a film according to one or more embodiments of the present disclosure is depicted. Figure 1 , method 20 begins at operation 30, wherein at least one wafer is loaded onto a substrate support surface. At operation 40, the substrate support surface is rotated between a first processing station and a second processing station. In one or more embodiments, the first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater, and the second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel, or a second heater. One or more of the second gas diffuser, the second cooling channel pattern, or the second heater rotates relative to one or more of the first gas diffuser, the first cooling channel pattern, or the first heater to provide a second gas flow pattern complementary to the first gas flow pattern. At operation 50, at each processing station, the top surface of at least one wafer is exposed to a processing condition to form a film. In one or more embodiments, the processing condition includes one or more of a temperature, a pressure, a reactive gas, or the like. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term "substantially uniform" refers to a film thickness of the formed film within ±5nm, ±4nm, ±3nm, ±2nm, or ±1nm.

[0052] In one or more embodiments, at least one wafer is stationary when the film is formed. In one or more embodiments, each of the first gas diffuser, the first cooling channel pattern or the first heater and the second gas diffuser, the second cooling channel pattern or the second heater has a symmetrical hole pattern with n-fold symmetry. As used herein, the term "n-fold symmetry" refers to the quality of being composed of completely similar parts facing each other around an axis. As used herein, "n-fold" refers to the number of rotations around an axis around which a symmetrical hole pattern can be arranged and maintained symmetric. In one or more embodiments, n is an integer in the range of 1 to 10. In other embodiments, n is an integer in the range of 2 to 10. In one or more embodiments, n is selected from 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10. In other embodiments, n is selected from 2, 3, 4, 5, 6, 7, 8, 9 or 10. In one or more embodiments, n is 2. As used herein, "aperture" refers to an opening, cavity, perforation, or the like in one or more of the first gas diffuser, the first cooling channel pattern, the first heater, the second gas diffuser, the second cooling channel pattern, or the second heater, through which gas, plasma, etc. can pass. In some embodiments, the aperture is circular. In other embodiments, the aperture can be any shape desired, including but not limited to triangles, squares, rectangles, hexagons, heptagons, octagons, stars, etc. In some embodiments, the aperture pattern (i.e., the overall pattern formed by the plurality of openings) is arranged in a circle, triangle, square, rectangle, hexagon, heptagon, octagon, star, etc.

[0053] In some embodiments, one or more of the second gas diffuser, the second cooling channel pattern, or the second heater is rotated about a central axis by an amount less than or equal to about (360 / (n*2)) degrees relative to one or more of the first gas diffuser, the first cooling channel pattern, or the first heater. When the first gas diffuser, the first cooling channel pattern, or the first heater shares a common central axis with the second gas diffuser, the second cooling channel pattern, or the second heater, the maximum pattern difference occurs when the pattern is rotated by (360 / (n*2)). Rotation beyond this amount will result in a decrease in pattern difference. Thus, for example, when the symmetry of the hole pattern is 2-fold (i.e., n=2), one or more of the second gas diffuser, the second cooling channel pattern, or the second heater is rotated by less than or equal to about 90° (i.e., (360 / (n*2))=(360 / (2*2))=(360 / 4)=90 degrees) relative to the first gas diffuser, the first cooling channel pattern, or the first heater.

[0054] In one or more embodiments, each of the first gas diffuser, the first cooling channel pattern, or the first heater and each of the second gas diffuser, the second cooling channel pattern, or the second heater have the same symmetrical hole pattern with n-fold symmetry, and one or more of the second gas diffuser, the second cooling channel pattern, or the second heater are rotated less than or equal to about (360 / (n*2)) degrees relative to the first gas diffuser, the first cooling channel pattern, or the first heater. The skilled person will recognize that the rotation of less than or equal to about (360 / (n*2)) is related to patterns sharing a common central axis. Patterns with offset central axes can have different rotation amounts to provide maximum differentiation.

[0055] In one or more embodiments, the method 10 further includes controlling a rotational speed of the substrate support surface.

[0056] Figure 2A and Figure 2B A heater coil 500 is shown. Figure 2B The heater coil 500 with Figure 2A The heater coil 500 is complementary.

[0057] Figure 3A and Figure 3B The cooling channel 600 is shown. Figure 3A , the channel 600 has an inlet 610 for cooling water and an outlet 620 from which the cooling water is discharged. Figure 3B and Figure 3A The coils 600 in are complementary.

[0058] In one or more embodiments, a processing chamber includes: a first processing station, the first processing station having a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater; a second processing station, the second processing station having a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater, the second gas diffuser, the second cooling channel pattern, or the second heater being rotated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide a second gas flow pattern that is complementary to the first gas flow pattern.

[0059] In one or more embodiments, a processing chamber is provided having a plurality of processing stations having alternating thermal processing stations and plasma processing stations. Each plasma processing station is composed of a plurality of plasma pixels (independently controlled plasma generating elements), gas diffusers, cooling channels, and heaters. Each of the plasma pixel pattern, gas diffuser, cooling channel pattern, or heater of a first plasma station and the plasma pixel pattern, gas diffuser, cooling channel, or heater of a second plasma station has a symmetric pattern having n-fold symmetry.

[0060] One or more embodiments relate to a plasma processing chamber, comprising: a plurality of processing stations having alternating thermal processing stations and plasma processing stations. Each plasma station is composed of a plurality of plasma pixels (independently controlled plasma generating elements), a gas diffuser, a cooling channel, and a heater. When a wafer is stationary under the plasma station, the non-uniformity of the film is affected by the relative position of the wafer relative to the plasma pixel pattern, the gas diffuser, the cooling channel, and the heater of the plasma station. In these plasma stations: a first plasma processing station has a first plasma pixel pattern from a first plasma source, the first plasma source having a symmetrical pixel pattern with n-fold symmetry; and a second plasma processing station has a second plasma pixel pattern from a second plasma source, the second plasma source having a symmetrical pixel pattern with n-fold symmetry, and rotated relative to the first plasma source to provide a second plasma pixel pattern complementary to the first plasma pixel pattern.

[0061] FIG. 4A to FIG. 11C Various complementary plasma pixel patterns that may be produced when the second plasma station is rotated relative to the first plasma station are shown in accordance with one or more embodiments. Figure 4A , the first plasma pixel pattern 50 has a symmetrical hexagonal pattern 52a, and the hexagonal pattern 52a has a four-fold symmetry around the axis 70a. Figure 4B , the second plasma pixel pattern 54 has a symmetrical hexagonal pattern 52b, which has a 4-fold symmetry and is rotated about an axis 70b relative to the first plasma pixel pattern 50. In one or more embodiments, the first plasma pixel pattern 50 and the second plasma pixel pattern 54 have the same symmetrical hexagonal pattern, which has n-fold symmetry and has a shared central axis 70a, 70b. In one or more embodiments, the second plasma pixel pattern 54 is rotated less than or equal to about (360 / (n*2)) degrees relative to the first plasma pixel pattern 50. Therefore, referring to Figure 4A and Figure 4B , the second plasma pixel pattern 54 is rotated less than or equal to about 45 degrees relative to the first plasma pixel pattern 50 (n=4; 360 / (4*2)=45). When the wafer is processed sequentially under each of the first plasma pixel pattern 50 and the second plasma pixel pattern 54, the result is a film 60 having substantially uniform plasma exposure and high thickness uniformity. In one or more embodiments, the film 60 also has one or more of a uniform refractive index, a uniform wet etch rate, or a uniform film stress.

[0062] Reference Figure 5A, the first plasma pixel pattern 50 has a symmetrical square pattern 52a, and the square pattern 52a has a four-fold symmetry around the axis 70a. Figure 5B , the second plasma pixel pattern 54 has a symmetrical square pattern 52b, and the square pattern 52b has a four-fold symmetry around an axis 70b. The axis 70b is offset from the axis 70a. Figure 5C Shows Figure 5A and Figure 5B The combined pattern of includes axes 70a, 70b. The skilled person will appreciate that the rotation of the pattern around the axis is not shown in this exemplary embodiment. Rather, the translation of the pattern from axis 70a to axis 70b provides the greatest pattern difference.

[0063] In another embodiment, Figure 5A The plasma pixel pattern 50 in FIG. 5 has an axis 72 a around which the hole pattern has been arranged, and Figure 5B The plasma pixel pattern 54 in FIG. 5 has an axis 72b around which the holding pattern has been arranged. In this embodiment, the axis 72a and the axis 72b are shared or coaxial, and the hole pattern is asymmetric. Figure 5A and Figure 5B The hole pattern combination to form Figure 5C Although the symmetry is not shown in this configuration, for the purpose of rotation calculations it can be considered as 1-fold symmetry (n=1), resulting in 180°.

[0064] In one or more embodiments, the first plasma pixel pattern 50 and the second plasma pixel pattern 54 have the same symmetrical square pattern with n-fold symmetry. In one or more embodiments, the second plasma pixel pattern 54 is rotated less than or equal to about (360 / (n*2)) degrees relative to the first plasma pixel pattern 50. Therefore, referring to Figure 5A and Figure 5B , the second plasma pixel pattern 54 is rotated less than or equal to about 90 degrees relative to the first plasma pixel pattern 50. When the wafer is sequentially processed under each of the first plasma pixel pattern 50 and the second plasma pixel pattern 54, the wafer has complementary plasma exposures to the first plasma pixel pattern and the second plasma pixel pattern 60, such as Figure 5C The result is a film with substantially uniform plasma exposure and high thickness and property uniformity.

[0065] Reference Fig. 6A , the first plasma pixel pattern 50 has a symmetrical rectangular pattern 52a, and the rectangular pattern 52a has a two-fold symmetry around the axis 70a. Figure 6B, the second plasma pixel pattern 54 has a symmetrical rectangular pattern 52b, which has a 2-fold symmetry around the axis 70b and is rotated relative to the first plasma pixel pattern 50. In one or more embodiments, the first plasma pixel pattern 50 and the second plasma pixel pattern 54 have the same symmetrical rectangular pattern with n-fold symmetry. In one or more embodiments, the second plasma pixel pattern 54 is rotated less than or equal to about (360 / (n*2)) degrees relative to the first plasma pixel pattern 50. Therefore, referring to Figure 4A and Figure 4B , the second plasma pixel pattern 54 is rotated less than or equal to about 90 degrees relative to the first plasma pixel pattern 50. When the wafer is sequentially processed under each of the first plasma pixel pattern 50 and the second plasma pixel pattern 54, the wafer has complementary plasma exposures to the first plasma pixel pattern and the second plasma pixel pattern 60, such as Figure 6C The result is a film with substantially uniform plasma exposure and high thickness and property uniformity.

[0066] Reference Fig. 7A , the first plasma pixel pattern 50 has a symmetrical hexagonal pattern 52a, and the hexagonal pattern 52a has a three-fold symmetry around the axis 70a. Figure 7B , the second plasma pixel pattern 54 has a symmetrical hexagonal pattern 52b, which has a 3-fold symmetry around the axis 70b and is rotated relative to the first plasma pixel pattern 50. In one or more embodiments, the first plasma pixel pattern 50 and the second plasma pixel pattern 54 have the same symmetrical hexagonal pattern with n-fold symmetry. In one or more embodiments, the second plasma pixel pattern 54 is rotated less than or equal to about (360 / (n*2)) degrees relative to the first plasma pixel pattern 50. Therefore, referring to Fig. 7A and Figure 7B , the second plasma pixel pattern 54 is rotated less than or equal to about 60 degrees relative to the first plasma pixel pattern 50. When the wafer is sequentially processed under each of the first plasma pixel pattern 50 and the second plasma pixel pattern 54, the wafer has complementary plasma exposures to the first plasma pixel pattern and the second plasma pixel pattern 60, such as Figure 7C The result is a film with substantially uniform plasma exposure and high thickness and property uniformity.

[0067] Reference Fig. 8A , the first plasma pixel pattern 50 has a symmetrical outer ring plus hexagonal pattern 52a, and the outer ring plus hexagonal pattern 52a has a three-fold symmetry around the axis 70a. Figure 8B, the second plasma pixel pattern 54 has a symmetrical outer ring plus hexagonal pattern 52b, which has a 3-fold symmetry around the axis 70b and is rotated relative to the first plasma pixel pattern 50. In one or more embodiments, the first plasma pixel pattern 50 and the second plasma pixel pattern 54 have the same symmetrical outer ring plus hexagonal pattern with n-fold symmetry. In one or more embodiments, the second plasma pixel pattern 54 is rotated less than or equal to about (360 / (n*2)) degrees relative to the first plasma pixel pattern 50. Therefore, referring to Fig. 6A and Figure 6B , the second plasma pixel pattern 54 is rotated less than or equal to about 90 degrees relative to the first plasma pixel pattern 50. When the wafer is sequentially processed under each of the first plasma pixel pattern 50 and the second plasma pixel pattern 54, the wafer has complementary plasma exposures to the first plasma pixel pattern and the second plasma pixel pattern 60, such as Figure 8C The result is a film with substantially uniform plasma exposure and high thickness and property uniformity.

[0068] Reference Fig. 9A , the first plasma pixel pattern 50 has a symmetrical outer ring plus rectangular pattern 52a, and the outer ring plus rectangular pattern 52a has a two-fold symmetry around the axis 70a. Fig. 9B , the second plasma pixel pattern 54 has a symmetrical outer ring plus rectangular pattern 52b, which has a 2-fold symmetry around the axis 70b and is rotated relative to the first plasma pixel pattern 50. In one or more embodiments, the first plasma pixel pattern 50 and the second plasma pixel pattern 54 have the same symmetrical outer ring plus rectangular pattern with n-fold symmetry. In one or more embodiments, the second plasma pixel pattern 54 is rotated less than or equal to about (360 / (n*2)) degrees relative to the first plasma pixel pattern 50. Therefore, referring to Fig. 9A and Fig. 9B , the second plasma pixel pattern 54 is rotated less than or equal to about 90 degrees relative to the first plasma pixel pattern 50. When the wafer is sequentially processed under each of the first plasma pixel pattern 50 and the second plasma pixel pattern 54, the wafer has complementary plasma exposures to the first plasma pixel pattern and the second plasma pixel pattern 60, such as Fig. 9C The result is a film with substantially uniform plasma exposure and high thickness and property uniformity.

[0069] Reference Fig. 10A , the first plasma pixel pattern 50 has an outer ring plus radial pattern 52a, and the outer ring plus radial pattern 52a has nineteen pixels (numbered 1-19) around the axis 70a. Fig. 10B , the second plasma pixel pattern 54 has an outer ring plus radial pattern 52b, which has nineteen sources (numbered 1-19) around axis 70b and is slightly rotated relative to the first plasma pixel pattern 50. The pixels (numbered 2-7) of the second plasma pixel pattern are rotated 30 degrees relative to the pixels (numbered 2-7) of the first plasma pixel pattern. The pixels (numbered 8-19) of the second plasma pixel pattern are rotated 15 degrees relative to the pixels (numbered 8-19) of the first plasma pixel pattern. When the wafer is processed sequentially under each of the first plasma pixel pattern 50 and the second plasma pixel pattern 54, the wafer has complementary plasma exposures to the first plasma pixel pattern and the second plasma pixel pattern 60, as shown in FIG. Fig. 10C The result is a film with substantially uniform plasma exposure and high thickness and property uniformity.

[0070] Reference Fig.11A , the first plasma pixel pattern 50 has an outer ring plus radial pattern 52a, and the outer ring plus radial pattern 52a has seventeen sources around the axis 70a. Fig. 11B , the second plasma pixel pattern 54 has an outer ring plus radial pattern 52b, the outer ring plus radial pattern 52b has seventeen sources around axis 70b and is slightly rotated relative to the first plasma pixel pattern 50. In one or more embodiments, the symmetry of the pixel pattern 52a is 2-fold (i.e., n=2), and one or more of the second plasma pixel pattern, the second gas diffuser, the second cooling channel pattern, or the second heater is rotated less than or equal to about 90° relative to the first plasma pixel pattern, the first gas diffuser, the first cooling channel pattern, or the first heater (i.e., (360 / (n*2))=(360 / (2*2))=(360 / 4)=90 degrees). When the wafer is sequentially processed under each of the first plasma pixel pattern 50 and the second plasma pixel pattern 54, the wafer has complementary plasma exposures to the first plasma pixel pattern and the second plasma pixel pattern 60, as shown in FIG. Fig. 11C The result is a film with substantially uniform plasma exposure and high thickness and property uniformity.

[0071] Fig.12 and Fig.13 A processing chamber 100 is shown in accordance with one or more embodiments of the present disclosure. Fig.12 Illustrated is a processing chamber 100 shown as a cross-sectional isometric view in accordance with one or more embodiments of the present disclosure. Fig.13A cross-sectional view of a processing chamber 100 is illustrated in accordance with one or more embodiments of the present disclosure. Thus, some embodiments of the present disclosure are directed to a processing chamber 100 incorporating a support assembly 200 and a top plate 300.

[0072] The processing chamber 100 has a housing 102 with walls 104 and a bottom 106. The housing 102 together with the top plate 300 defines an interior volume 109, also referred to as a processing volume.

[0073] The processing chamber 100 includes a plurality of processing stations 110. The processing stations 110 are located in the interior volume 109 of the housing 102 and are positioned in a circular arrangement around the rotation axis 211 of the support assembly 200. Each processing station 110 includes a gas injector 112 having a front face 114. In some embodiments, the front face 114 of each gas injector 112 is substantially coplanar. When used in this manner, "substantially coplanar" means that the plane formed by the gas injector 112 is within ±5°, ±4°, ±3°, ±2°, or ±1° of the plane formed by the other gas injectors 112. In some embodiments, the term "substantially coplanar" means that the plane formed by each gas injector is within ±50 μm, ±40 μm, ±30 μm, ±20 μm, or ±10 μm.

[0074] The processing station 110 is defined as an area in which processing can be performed. For example, the processing station 110 can be defined by the support surface 231 of the heater 230 and the front face 114 of the gas injector 112 as described below.

[0075] In some embodiments, the processing station 110 has a gas flow pattern from one or more of a gas diffuser, a cooling channel, or a heater. In some embodiments, the gas injector (or gas diffuser) 112 is a showerhead-type gas diffuser and has a symmetrical hole pattern with n-fold symmetry. In other embodiments, the processing station 110 is configured to function as a plasma station, and the gas injector 112 is a plasma station with a pixelated geometry to produce a complementary plasma pattern. The complementary pattern of the plasma pattern can be controlled by rotating around a central axis of the plasma pixel pattern. For example, Figure 5C The embodiment shown in can be the result of rotation around the central axis of the plasma pixel pattern or the central axis of the processing station. It is also possible to control complementary plasma patterns by using two different plasma pixel patterns, such as Fig. 11C shown.

[0076] The processing station 110 can be configured to perform any suitable process and provide any suitable processing conditions. The type of gas injector 112 used will depend, for example, on the type of process being performed and the type of showerhead or gas injector. For example, a processing station 110 configured to function as an atomic layer deposition apparatus may have a showerhead or swirl-type gas injector. However, a processing station 110 configured to function as a plasma station may have a configuration of one or more electrodes and / or ground plates to generate a plasma while allowing the plasma gas to flow toward the wafer. Fig.13 , there is a processing station 110a on the left side of the figure and a processing station 110b on the right side of the figure, and the processing station 110a is of a different type than the processing station 110b. Suitable processing stations 110 include, but are not limited to, thermal processing stations, microwave plasma, three-electrode CCP, ICP, parallel plate CCP, UV exposure, laser processing, pumping chambers, annealing stations, and metrology stations.

[0077] Fig.14 An exploded view of a processing station 110 is shown in accordance with one or more embodiments of the present disclosure. The processing station 110 shown includes three main components: a top plate 300 (also referred to as a lid), a pump / purge insert 330, and a gas injector 112. Fig.14 The illustrated gas injector 112 is a showerhead type gas injector. In some embodiments, the insert is connected to or in fluid communication with a vacuum (exhaust). In some embodiments, the insert is connected to or in fluid communication with a purge gas source.

[0078] The opening 310 in the top plate 300 can be of uniform size or of varying sizes. Gas injectors 112 of varying sizes / shapes can be used with a pump / purge plug-in 330 that is shaped to transition from the opening 310 to the gas injector 112. For example, as shown, the pump / purge plug-in 330 includes a top 331 and a bottom 333 with sidewalls 335. When inserted into the opening 310 in the top plate 300, a protrusion 334 adjacent to the bottom 333 can be located on a shelf 315 formed in the opening 310. In some embodiments, there is no shelf 315 in the opening, and a flange portion 337 of the pump / purge plug-in 330 rests on the top of the top plate 300. In the illustrated embodiment, the protrusion 334 rests on the shelf 315, with an O-ring 314 located between the protrusion 334 and the shelf 315 to help form an airtight seal.

[0079] In some embodiments, one or more purge rings 309 are included in the top plate 300. The purge rings 309 may be in fluid communication with a purge plenum (not shown) or a purge gas source (not shown) to provide a positive flow of purge gas to prevent process gas leakage from the processing chamber.

[0080] The pump / purge insert 330 of some embodiments includes a plenum 336 having at least one opening 338 in the bottom 333 of the pump / purge insert 330. The plenum 336 has an inlet (not shown) typically near the top 331 or sidewall 335 of the pump / purge insert 330.

[0081] In some embodiments, plenum 336 may be filled with a purge or inert gas that may pass through openings 338 in bottom 333 of pump / purge insert 330. The flow of gas through openings 338 may help form a gas curtain type barrier to prevent process gases from leaking from inside the processing chamber.

[0082] In some embodiments, the air chamber 336 is connected to a vacuum source or is in fluid communication with a vacuum source. In such an embodiment, gas flows through an opening 338 in the bottom 333 of the pump / purge insert 330 into the air chamber 336. The gas can be evacuated from the air chamber to exhaust. This arrangement can be used to exhaust gas from the processing station 110 during use.

[0083] The pump / purge insert 330 includes an opening 339 into which the gas injector 112 may be inserted. The illustrated gas injector 112 has a flange 342 that may contact a protrusion 332 adjacent to the top 331 of the pump / purge insert 330. The diameter or width of the gas injector 112 may be any suitable size that may fit within the opening 339 of the pump / purge insert 330. This allows various types of gas injectors 112 to be used within the same opening 310 in the top plate 300.

[0084] Fig.15 A processing platform 400 is illustrated in accordance with one or more implementations of the present disclosure. Fig.15 The illustrated embodiment represents only one possible configuration and should not be considered to limit the scope of the present disclosure. For example, in some embodiments, the processing platform 400 has a different number of one or more processing chambers 100, buffer stations 420 and / or robot 430 configurations than the illustrated embodiment.

[0085] The exemplary processing platform 400 includes a central transfer station 410 having a plurality of sides 411, 412, 413, 414. The transfer station 410 is shown having a first side 411, a second side 412, a third side 413, and a fourth side 414. Although four sides are illustrated, those skilled in the art will appreciate that the transfer station 410 may have any suitable number of sides depending on, for example, the overall configuration of the processing platform 400. In some embodiments, the transfer station 410 has three sides, four sides, five sides, six sides, seven sides, or eight sides.

[0086] The transfer station 410 has a robot 430 disposed therein. The robot 430 can be any suitable robot capable of moving a wafer during processing. In some embodiments, the robot 430 has a first arm 431 and a second arm 432. The first arm 431 and the second arm 432 can move independently of each other. The first arm 431 and the second arm 432 can move in the xy plane and / or along the z axis. In some embodiments, the robot 430 includes a third arm (not shown) or a fourth arm (not shown). Each arm can move independently of the other arms.

[0087] The illustrated embodiment includes six process chambers 100, with each of the second side 412, the third side 413, and the fourth side 414 of the central transfer station 410 connecting two process chambers 100. Each process chamber 100 may be configured to perform a different process.

[0088] The processing platform 400 may also include one or more buffer stations 420 connected to the first side 411 of the central transfer station 410. The buffer stations 420 may perform the same or different functions. For example, the buffer stations may hold wafer cassettes, where the wafers are processed and returned to the original cassette, or one of the buffer stations may hold unprocessed wafers, which are moved to another buffer station after processing. In some embodiments, one or more buffer stations are configured to pre-process, pre-heat, or clean the wafers before and / or after processing.

[0089] The processing platform 400 may also include one or more slit valves 418 between the central transfer station 410 and any of the processing chambers 100. The slit valves 418 may be opened and closed to isolate the interior volume within the processing chamber 100 from the environment within the central transfer station 410. For example, if a processing chamber will generate plasma during processing, it may be desirable to close the slit valve for that processing chamber to prevent stray plasma from damaging a robot in the transfer station.

[0090] The processing platform 400 can be connected to a factory interface 450 to allow wafers or wafer boxes to be loaded into the processing platform 400. A robot 455 within the factory interface 450 can be used to move wafers or boxes into and out of the buffer station. The wafers or boxes can be moved within the processing platform 400 by a robot 430 in the central transfer station 410. In some embodiments, the factory interface 450 is a transfer station for another cluster tool (i.e., another multi-chamber processing platform).

[0091] A controller 495 may be provided and coupled to various components of the processing platform 400 to control the operation of the components. The controller 495 may be a single controller that controls the entire processing platform 400, or may be a plurality of controllers that control various portions of the processing platform 400. For example, the processing platform 400 may include a separate controller for each of the processing chambers 100, the central transfer station 410, the factory interface 450, and the robot 430.

[0092] In some embodiments, the processing chamber 100 further includes a controller 495 connected to the plurality of substantially coplanar support surfaces 231, the controller 495 being configured to control one or more of the first temperature or the second temperature. In one or more embodiments, the controller 495 controls the substrate support assembly 200 ( Fig.13 )'s movement speed.

[0093] In some embodiments, controller 495 includes a central processing unit (CPU) 496, memory 497, and support circuits 498. Controller 495 can control processing platform 400 directly or via a computer (or controller) associated with specific processing chambers and / or support system components.

[0094] The controller 495 may be any form of a general purpose computer processor that may be used in an industrial setting to control various chambers and subprocessors. The memory 497 or computer readable medium of the controller 495 may be one or more of readily available memories such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, optical storage media (e.g., compact disc or digital video disk), flash drive, or any other form of digital storage (local or remote). The memory 497 may retain a set of instructions operable by the processor (CPU 496) to control the parameters and components of the processing platform 400.

[0095] Support circuits 498 are coupled to CPU 496 to support the processor in a conventional manner. These circuits include cache memory, power supplies, clock circuits, input / output circuitry, and subsystems, etc. One or more processes may be stored in memory 498 as software programs that, when executed or called by the processor, cause the processor to control the operation of the processing platform 400 or individual processing chambers in the manner described herein. The software programs may also be stored and / or executed by a second CPU (not shown) that is remote from the hardware controlled by CPU 496.

[0096] Some or all of the processes and methods of the present disclosure may also be performed in hardware. Thus, the processes may be implemented in software and may be performed using a computer system, may be implemented in hardware, such as an application specific integrated circuit or other type of hardware implementation, or may be implemented as a combination of software and hardware. When executed by a processor, the software program converts a general purpose computer into a special purpose computer (controller) that controls chamber operations to perform the processes.

[0097] In some embodiments, the controller 495 has one or more configurations to perform individual processes or sub-processes to perform the method. The controller 495 can be connected to and configured to operate intermediate components to perform the functions of the method. For example, the controller 495 can be connected to and configured to control one or more of a gas valve, an actuator, a motor, a slit valve, a vacuum controller, or other components.

[0098] In one or more embodiments, the processing chamber 100 further includes at least one wafer on the support surface. In some embodiments, the first emissivity and the first temperature and / or the second emissivity and the second temperature provide a steady-state temperature of the wafer in the first station and the second station.

[0099] Fig.16A and Fig. 16B Another embodiment of the present disclosure is shown. Fig.16A Shown is a partial view of heater 230 and support plate 245 which have been rotated into position below processing station 110 such that wafer 101 is adjacent gas injector 112. O-ring 329 on support plate 245 or on the exterior of heater 230 is in a relaxed state.

[0100] In some embodiments, the processing station 110 has an air flow pattern from the heater 230. In some embodiments, the heater 230 has a symmetric hole pattern with n-fold symmetry.

[0101] Fig. 16B The support plate 245 and heater 230 are illustrated after being moved toward the processing station 110 so that the support surface 231 of the heater 230 is in contact or nearly in contact with the front surface 114 of the gas injector 112 in the processing station 110. In this position, the O-ring 329 is compressed, forming a seal around the outer edge of the support plate 245 or the exterior of the heater 230. This allows the wafer 101 to be moved as close to the gas injector 112 as possible to minimize the volume of the reaction area 219 so that the reaction area 219 can be purged quickly.

[0102] Gas that may flow out of the reaction area 219 is discharged into the gas chamber 336 through the opening 338 and discharged to the exhaust pipe or the foreline (not shown). A purge gas curtain outside the opening 338 can be generated by the purge gas chamber 370 and the purge gas port 371. In addition, the gap 137 between the heater 230 and the support plate 245 can help further shield the reaction area 219 and prevent the reactive gas from flowing into the interior volume 109 of the processing chamber 100.

[0103] Return to reference Fig.15 , the controller 495 of some embodiments has one or more configurations selected from the following: a configuration for moving substrates on a robot between multiple processing chambers; a configuration for loading and / or unloading substrates from the system; a configuration for opening / closing a slit valve; a configuration for powering one or more heaters; a configuration for measuring the temperature of a heater; a configuration for measuring the temperature of a wafer on a heater; a configuration for loading or unloading a wafer from a heater; a configuration for providing feedback between temperature measurement and heater power control; a configuration for rotating a support assembly about a rotational axis; a configuration for moving a support assembly along the rotational axis (i.e., along the z-axis); a configuration for setting or changing the rotational speed of a support assembly; a configuration for providing a gas flow to a gas injector; a configuration for powering one or more electrodes to generate a plasma in a gas injector; a configuration for controlling a power supply to a plasma source; a configuration for controlling the frequency and / or power of a power supply to a plasma source; and / or a configuration for providing control for a thermal annealing process station.

[0104] One or more embodiments are directed to a processing chamber 100, comprising: a first plasma processing station 110a having a first plasma pixel pattern from a first plasma source 112, the first plasma source 112 having a symmetrical plasma pixel pattern having n-fold symmetry; and a second plasma processing station 110b having a second plasma pixel pattern from a second plasma source 112, the second plasma source 112 having n-fold symmetry and rotated relative to the first plasma source 112 to provide a second plasma pixel pattern complementary to the first plasma pixel pattern. In one or more embodiments, the second plasma source is rotated less than or equal to about (360 / (n*2)) degrees relative to the first plasma source. In other embodiments, each of the first plasma source and the second plasma source has the same symmetrical pixel pattern having n-fold symmetry. In one or more embodiments, n is an integer in the range of 2 to 10. In further embodiments, the first plasma source and the second plasma source have different plasma pixel patterns to form complementary plasma pixel patterns.

[0105] References throughout this specification to "one embodiment," "certain embodiments," "one or more embodiments," or "an embodiment" mean that the particular features, structures, materials, or characteristics described in conjunction with the embodiment are included in at least one embodiment of the present disclosure. Thus, phrases such as "in one or more embodiments," "certain embodiments," "in an embodiment," or "in an embodiment" appearing in various places throughout this specification do not necessarily refer to the same embodiment of the present disclosure. Furthermore, particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0106] Although the disclosure herein has been described with reference to specific embodiments, it should be understood that these embodiments are only intended to illustrate the principles and applications of the disclosure. It will be apparent to those skilled in the art that various modifications and variations may be made to the methods and apparatus of the disclosure without departing from the spirit and scope of the disclosure. Therefore, the disclosure is intended to include modifications and variations within the scope of the appended claims and their equivalents.

Claims

1. A processing chamber, comprising: a first processing station having a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater; as well as a second processing station having a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater, the second gas diffuser, the second cooling channel pattern, or the second heater being rotated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern, Each of the first gas diffuser, the first cooling channel pattern or the first heater and the second gas diffuser, the second cooling channel pattern or the second heater has a symmetric pattern with n-fold symmetry, where n is an integer in the range of 3 to 10.

2. The processing chamber of claim 1, wherein one or more of the second gas diffuser, the second cooling channel pattern, or the second heater are rotated less than or equal to (360 / (n*2)) degrees relative to the first gas diffuser.

3. The processing chamber of claim 1 , wherein each of the first gas diffuser, the first cooling channel pattern, or the first heater and the second gas diffuser, the second cooling channel pattern, or the second heater has an identical symmetric pattern with n-fold symmetry, and the second gas diffuser, the second cooling channel pattern, or the second heater is rotated less than or equal to (360 / (n*2)) degrees relative to the first gas diffuser, the first cooling channel pattern, or the first heater.

4. The processing chamber of claim 1, further comprising a heater at one or more of the first processing station or the second processing station.

5. The processing chamber of claim 1, further comprising a controller coupled to one or more of the first processing station or the second processing station.

6. The processing chamber of claim 1, further comprising at least one wafer on one or more of the first processing station or the second processing station.

7. A method for forming a film, the method comprising: loading at least one wafer onto the substrate support surface; rotating the substrate support surface between a first processing station having a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater and a second processing station having a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater, the second gas diffuser, the second cooling channel pattern, or the second heater being rotated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern; and At each processing station, exposing the top surface of the at least one wafer to processing conditions to form a film having a substantially uniform thickness, Each of the first gas diffuser, the first cooling channel pattern or the first heater and the second gas diffuser, the second cooling channel pattern or the second heater has a symmetric pattern with n-fold symmetry, where n is an integer in the range of 3 to 10.

8. The method of claim 7, wherein the at least one wafer is stationary while the film is formed.

9. The method of claim 7, wherein one or more of the second gas diffuser, the second cooling channel pattern, or the second heater is rotated less than or equal to (360 / (n*2)) degrees relative to one or more of the first gas diffuser, the first cooling channel pattern, or the first heater.

10. The method of claim 7, wherein each of the first gas diffuser, the first cooling channel pattern, or the first heater and the second gas diffuser, the second cooling channel pattern, or the second heater has the same symmetric pattern with n-fold symmetry, and one or more of the second gas diffuser, the second cooling channel pattern, or the second heater is rotated less than or equal to (360 / (n*2)) degrees relative to the first gas diffuser, the first cooling channel pattern, or the first heater.

11. The method of claim 7, further comprising: The rotation speed of the substrate supporting surface is controlled.

12. A processing chamber comprising: a first plasma processing station having a first plasma pixel pattern from a first plasma source, the first plasma source having a symmetric pixel pattern with n-fold symmetry; as well as a second plasma processing station having a second plasma pixel pattern from a second plasma source, the second plasma source having a symmetric pixel pattern having n-fold symmetry and rotated relative to the first plasma source to provide a second plasma pixel pattern complementary to the first plasma pixel pattern, The second plasma source is rotated relative to the first plasma source by less than or equal to (360 / (n*2)) degrees, wherein n is an integer in the range of 3 to 10.

13. The processing chamber of claim 12, wherein the second plasma source has a plasma pixel pattern that is different from but complementary to the first plasma source.

14. The processing chamber of claim 12, wherein each of the first plasma source and the second plasma source possesses a same symmetric pixel pattern having n-fold symmetry.

15. The processing chamber of claim 12, further comprising a gas diffuser, a cooling channel, a heater on one or more of the first plasma processing station or the second plasma processing station.

Images