Electrostatic chuck heater

Abstract

The present invention provides an electrostatic chuck heater, wherein the electrostatic chuck heater (20) comprises a ceramic plate (22), an electrostatic electrode (24), a first region heater electrode (31) and a second region heater electrode (32), and a first region gas groove (41) and a second region gas groove (42). The ceramic plate (22) comprises a wafer mounting surface (22a) on its surface. The electrostatic electrode (24) is embedded in the ceramic plate (22). The first region heater electrode (31) and the second region heater electrode (32) are embedded in the ceramic plate (22) in correspondence with the heater regions obtained by dividing the wafer mounting surface (22a) into a plurality of parts, respectively, and can supply power separately. The region gas grooves (41, 42) are independently arranged from the heater regions and in correspondence with the gas supply regions obtained by dividing the wafer mounting surface (22a) into a plurality of parts, respectively, and can supply gas separately.

Description

Technical Field

[0001] The present invention relates to electrostatic chuck heaters. Background Art

[0002] An electrostatic chuck uses electrostatic force to attract a wafer placed on a wafer placement surface, and is used in semiconductor manufacturing equipment. As such an electrostatic chuck, for example, as described in Patent Document 1, there is known an electrostatic chuck that has a first annular protrusion and a second annular protrusion in contact with the wafer on the outer peripheral edge and the inner side of the wafer placement surface, and a first gas groove area and a second gas groove area between the first annular protrusion and the second annular protrusion and on the inner side of the second annular protrusion. When a wafer is placed on the wafer placement surface of the electrostatic chuck, the first gas groove area and the second gas groove area become closed spaces due to the wafer, and the pressure of the thermal conductive gas supplied to each closed space can be controlled individually.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-135851 Summary of the invention

[0006] Problems to be solved by the invention

[0007] However, the electrostatic chuck of Patent Document 1 does not have a built-in heater. As a heater, a zone heater electrode corresponding to each of a plurality of heater zones is sometimes built-in in the electrostatic chuck. In such an electrostatic chuck, since the amount of heat generated can be controlled by adjusting the current for each zone heater electrode, the temperature of each heater zone can be adjusted. However, such an operation alone may not be able to cope with the temperature unevenness of the wafer.

[0008] The present invention has been made to solve such a problem, and a main object of the present invention is to further improve the thermal uniformity of a wafer.

[0009] Solutions to Solve Problems

[0010] The electrostatic chuck heater of the present invention has:

[0011] A ceramic plate having a wafer mounting surface on its surface;

[0012] an electrostatic electrode embedded in the ceramic plate;

[0013] Zone heater electrodes are embedded in the ceramic plate corresponding to the heater zones obtained by dividing the wafer mounting surface into a plurality of zones, and are capable of supplying power individually; and

[0014] The zone gas grooves are provided independently of the heater and correspond to the gas supply zones respectively obtained by dividing the wafer mounting surface into a plurality of zones, and can supply gas individually.

[0015] In the electrostatic chuck heater, there are a plurality of regional heater electrodes and a plurality of regional gas grooves. When the wafer is placed on the wafer placement surface, each regional gas groove forms a closed space together with the wafer. Therefore, gas can be supplied to each closed space separately. For example, when a hot spot is generated on the wafer, the heat can be efficiently dissipated to the ceramic plate by increasing the pressure of the gas supplied to the regional gas groove corresponding to the hot spot or supplying a gas with high thermal conductivity. When a cold spot is generated on the wafer, the heat can be difficult to dissipate to the ceramic plate by reducing the pressure of the gas supplied to the regional gas groove corresponding to the cold spot or supplying a gas with low thermal conductivity. In the electrostatic chuck heater, the temperature of each heater zone can be adjusted by adjusting the power supplied to each regional heater electrode, and the temperature of each regional gas groove can be adjusted by adjusting the thermal conductivity of the gas in each regional gas groove. Therefore, the thermal uniformity of the wafer can be further improved.

[0016] In the electrostatic chuck heater of the present invention, one of the zone heater electrodes may correspond to more than one of the zone gas grooves. In this case, when the thermal uniformity of a portion of a wafer mounted on a wafer mounting surface corresponding to a certain zone heater electrode is poor, the thermal uniformity can be improved by adjusting the thermal conductivity of the gas supplied to the zone gas groove corresponding to the zone heater electrode.

[0017] In the electrostatic chuck heater of the present invention, the regional gas groove may be provided at a location where the regional heater electrode is not provided. In the case where the thermal uniformity of a portion corresponding to a region (heater-free region) where the regional heater electrode is not provided in the wafer placed on the wafer placement surface is poor, the heat exchange from the periphery of the heater-free region to the heater-free region can be adjusted by adjusting the thermal conductivity of the gas supplied to the regional gas groove corresponding to the heater-free region. Therefore, the thermal uniformity can be improved.

[0018] In the electrostatic chuck heater of the present invention, the zone gas groove corresponding to one of the two adjacent zone heater electrodes may also overlap with the other zone heater electrode. In this case, a zone gas groove is also arranged in the gap between the two adjacent zone heater electrodes. Therefore, by adjusting the thermal conductivity of the gas supplied to the zone gas groove, the thermal uniformity of the portion corresponding to the gap between the two adjacent zone heater electrodes in the wafer mounted on the wafer mounting surface can be improved.

[0019] In the electrostatic chuck heater of the present invention, the zone gas slots may each have a temperature measuring unit. In this case, the thermal conductivity of the gas supplied to the zone gas slots can be adjusted so that the temperature of each zone gas slot reaches the target temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 2 is an explanatory diagram showing a schematic configuration of the plasma processing apparatus 10 .

[0021] Figure 2 It is a perspective view of the electrostatic chuck heater 20 integrated with the cooling plate 30 .

[0022] Figure 3 yes Figure 2 AA cross-section diagram.

[0023] Figure 4 1 is a top view of the electrostatic chuck heater 20 .

[0024] Figure 5 It is a cross-sectional view of another example of the electrostatic chuck heater 20 .

[0025] Figure 6 It is a cross-sectional view of another example of the electrostatic chuck heater 20 .

[0026] Figure 7 It is a cross-sectional view of another example of the electrostatic chuck heater 20 .

[0027] Figure 8 It is a cross-sectional view of another example of the electrostatic chuck heater 20 .

[0028] Fig. 9 It is a cross-sectional view of another example of the electrostatic chuck heater 20 .

[0029] Fig.10 It is a top view of another example of the electrostatic chuck heater 20 .

[0030] Fig.11 It is a top view of another example of the electrostatic chuck heater 20 . DETAILED DESCRIPTION

[0031] Next, an electrostatic chuck heater 20 which is a preferred embodiment of the ceramic heater of the present invention will be described below. Figure 1 1 is an explanatory diagram showing a schematic configuration of a plasma processing apparatus 10 including an electrostatic chuck heater 20. Figure 2 is a perspective view of the electrostatic chuck heater 20 integrated with the cooling plate 30. Figure 3 yes Figure 2 AA cross-section diagram, Figure 4 2 is a top view of the electrostatic chuck heater 20. Figure 4In FIG. 1 , for convenience, the first area heater electrode 31 and the second area heater electrode 32 are shown with shadows. Figure 3 and Figure 4 In the figure, the tiny circular protrusions 29 on the wafer mounting surface 22a are omitted.

[0032] like Figure 1 As shown, the plasma processing apparatus 10 is provided with an electrostatic chuck heater 20 and an upper electrode 60 used for generating plasma inside a vacuum chamber 12 made of metal (e.g., aluminum) capable of adjusting the internal pressure. The electrostatic chuck heater 20 is provided inside the vacuum chamber 12 in a state of being bonded to the upper surface of a cooling plate 50. A plurality of small holes for supplying a reaction gas to the wafer surface are provided on the surface of the upper electrode 60 that faces the electrostatic chuck heater 20. The vacuum chamber 12 can introduce a reaction gas from a reaction gas introduction channel 14 to the upper electrode 60, and can reduce the internal pressure of the vacuum chamber 12 to a predetermined vacuum degree by using a vacuum pump connected to an exhaust passage 16.

[0033] like Figure 2 As shown, the electrostatic chuck heater 20 has a ceramic plate 22. The ceramic plate 22 is a disc-shaped plate made of ceramic (for example, alumina or aluminum nitride) with an outer diameter smaller than that of the wafer W, and has a wafer mounting surface 22a on the surface that can absorb and hold the wafer W. Figure 3 and Figure 4 As shown, the electrostatic electrode 24 , the first area heater electrode 31 , and the second area heater electrode 32 are buried in the ceramic plate 22 .

[0034] The electrostatic electrode 24 is a planar electrode to which a DC voltage can be applied by an ESC power supply (not shown), and is provided parallel to the wafer mounting surface 22a. When a voltage is applied to the electrostatic electrode 24, the wafer W is adsorbed and held on the wafer mounting surface 22a by Coulomb force or Johnson-Rabbeck force, and when the application of the DC voltage is released, the adsorption and holding of the wafer W on the wafer mounting surface 22a is released.

[0035] The first zone heater electrode 31 is a resistive heating element formed in a circular region (first heater zone HZ1) having a diameter smaller than that of the ceramic plate 22. If a voltage of a heater power source (not shown) is applied to terminals 31a, 31a provided at both ends of the first zone heater electrode 31, the first zone heater electrode 31 generates heat to heat the first heater zone HZ1.

[0036] The second zone heater electrode 32 is a resistive heating element formed in a one-stroke manner in an annular region (second heater zone HZ2) surrounding the first heater zone HZ1. If a voltage of a heater power supply (not shown) is applied to terminals 32a, 32a provided at both ends of the second zone heater electrode 32, the second zone heater electrode 32 generates heat to heat the second heater zone HZ2.

[0037] The first regional heater electrode 31 and the second regional heater electrode 32 are arranged on the same plane parallel to the chip mounting surface 22a, corresponding to the first heater zone HZ1 and the second heater zone HZ2 obtained by dividing the chip mounting surface 22a into two. Each regional heater electrode 31, 32 is formed of a conductive material such as W, WC, Mo, etc. The shape of each regional heater electrode 31, 32 is not particularly limited, for example, it can be a coil shape or a strip shape. In addition, it can also be obtained by printing a paste of a conductive material. For each regional heater electrode 31, 32, a voltage can be applied separately by a heater power supply using a power supply component not shown inserted from the back of the cooling plate 50.

[0038] On the wafer mounting surface 22a of the ceramic plate 22, an annular outer peripheral protrusion 26 provided along the outer periphery of the ceramic plate 22 and an annular inner peripheral protrusion 27 provided inside the outer peripheral protrusion 26 and spaced apart from the outer peripheral protrusion 26 are provided. The outer peripheral protrusion 26 and the inner peripheral protrusion 27 are provided so as to form concentric circles with the ceramic plate 22. Here, the gas groove provided corresponding to the circular area (first gas supply area GZ1) surrounded by the inner peripheral protrusion 27 on the wafer mounting surface 22a is referred to as the first area gas groove 41, and the gas groove provided corresponding to the annular area (second gas supply area GZ2) inside the outer peripheral protrusion 26 and outside the inner peripheral protrusion 27 is referred to as the second area gas groove 42. In the present embodiment, the first gas supply area GZ1 coincides with the first heater area HZ1, and the second gas supply area GZ2 coincides with the second heater area HZ2. The first region gas slot 41 and the second region gas slot 42 correspond to the first region heater electrode 31 and the second region heater electrode 32, respectively. Figure 2As shown, a plurality of tiny circular protrusions 29 having a height of several μm are formed on the bottom surfaces of the first region gas groove 41 and the second region gas groove 42. The heights of the outer peripheral protrusions 26 and the inner peripheral protrusions 27 are the same as the height of the circular protrusions 29. Therefore, the wafer W placed on the wafer placement surface 22a is supported by the upper surfaces of the circular protrusions 29, the outer peripheral protrusions 26, and the inner peripheral protrusions 27. Through holes 41a penetrating the ceramic plate 22 in the vertical direction are provided at a plurality of locations on the plane where the circular protrusions 29 are not provided in the first region gas groove 41. In addition, through holes 42a penetrating the ceramic plate 22 in the vertical direction are also provided at a plurality of locations on the plane where the circular protrusions 29 are not provided in the second region gas groove 42. In the through holes 41a and 42a, a rare gas adjusted to an arbitrary pressure is separately introduced from the outside of the plasma processing apparatus 10 by a gas piping member (not shown) inserted from the back side of the cooling plate 50.

[0039] The cooling plate 50 is a circular plate made of metal (for example, aluminum or aluminum alloy). Figure 3 As shown, the cooling plate 50 is bonded to the lower surface of the ceramic plate 22 via an adhesive 44. The cooling plate 50 has a refrigerant flow path 54 for circulating a refrigerant (cooling water) cooled by an external cooling device (not shown). The cooling plate 50 has a first sensor hole 51 and a second sensor hole 52 that penetrate in the up-down direction at positions corresponding to the first area gas groove 41 and the second area gas groove 42, respectively. A first temperature measuring sensor 61 is arranged in the first sensor hole 51, and a second temperature measuring sensor 62 is arranged in the second sensor hole 52. The first temperature measuring sensor 61 and the second temperature measuring sensor 62 are not particularly limited as long as they are sensors that can measure temperature, for example, contact thermometers (thermocouples, etc.), non-contact thermometers (IR sensors, etc.), etc. can be listed.

[0040] Next, an example of using the plasma processing device 10 thus constructed is described. First, in a state where an electrostatic chuck heater 20 is provided in the vacuum chamber 12, a wafer W is placed on the wafer mounting surface 22a of the ceramic plate 22. Then, the vacuum chamber 12 is depressurized by a vacuum pump to adjust to a predetermined vacuum degree, and a DC voltage is applied to the electrostatic electrode 24 of the ceramic plate 22 to generate a Coulomb force or a Johnson-Rabbeck force, so that the wafer W is adsorbed and held on the wafer mounting surface 22a of the ceramic plate 22. Thus, the first region gas groove 41 and the second region gas groove 42 form a closed space together with the wafer W. He gas with high thermal conductivity is introduced into each closed space in a manner to achieve a predetermined sealing pressure. Next, the vacuum chamber 12 is set to a reaction gas atmosphere of a predetermined pressure (for example, tens to hundreds of Pa), and in this state, a high-frequency voltage is applied between the upper electrode 60 in the vacuum chamber 12 and the electrostatic electrode 24 of the ceramic plate 22 to generate plasma. It should be noted that both a direct current voltage and a high-frequency voltage are applied to the electrostatic electrode 24 for generating an electrostatic force, but a high-frequency voltage may be applied to the cooling plate 50 instead of the electrostatic electrode 24. Then, the surface of the wafer W is etched using the generated plasma. When etching, the target temperature T of the wafer W is preset. The operator adjusts the power supplied to the first-region heater electrode 31, or adjusts the type and sealing pressure of the gas supplied to the first-region gas slot 41, so that the output value of the first temperature sensor 61 is consistent with the target temperature. The operator adjusts the power supplied to the second-region heater electrode 32, or adjusts the type and sealing pressure of the gas supplied to the second-region gas slot 42, so that the output value of the second temperature sensor 62 is consistent with the target temperature. A computer may also be made to execute the operations performed by the operator.

[0041] In the case where a hot spot is generated in the wafer W, the heat of the hot spot is efficiently dissipated to the ceramic plate 22 by increasing the sealing pressure of the gas supplied to the regional gas groove corresponding to the hot spot or supplying a gas with high thermal conductivity (such as He gas). Alternatively, the heat generation is suppressed by reducing the power supplied to the regional heater electrode of the heater area corresponding to the hot spot. On the other hand, in the case where a cold spot is generated in the wafer W, the heat of the cold spot is difficult to dissipate to the ceramic plate 22 by reducing the pressure of the gas supplied to the regional gas groove corresponding to the cold spot or supplying a gas with low thermal conductivity (such as Ar gas). Alternatively, the heat generation is increased by increasing the power supplied to the regional heater electrode of the heater area corresponding to the cold spot.

[0042] In the electrostatic chuck heater described in detail above, the temperature of the first heater zone HZ1 and the second heater zone HZ2 can be adjusted by adjusting the power supplied to the first zone heater 31 and the second zone heater electrode 32, respectively, and the temperature of the first zone gas slot 41 and the second zone gas slot 42 can be adjusted by adjusting the thermal conductivity of the first zone gas slot 41 and the second zone gas slot 42. Therefore, the thermal uniformity of the wafer W can be further improved.

[0043] In addition, one regional gas groove corresponds to one regional heater electrode. That is, when the electrostatic chuck heater 20 is viewed from above, the first regional gas groove 41 overlaps with the first regional heater electrode 31, and the second regional gas groove 42 overlaps with the second regional heater electrode 32. Therefore, when the thermal uniformity of the portion corresponding to a certain regional heater electrode in the wafer W mounted on the wafer mounting surface 22a is poor, the thermal uniformity can be improved by adjusting the thermal conductivity of the gas supplied to the regional gas groove corresponding to the regional heater electrode.

[0044] Furthermore, the first area gas groove 41 and the second area gas groove 42 each have a first temperature sensor 61 and a second temperature sensor 62. Therefore, the thermal conductivity of the gas supplied to the first area gas groove 41 and the second area gas groove 42 can be adjusted so that the temperature of each of the first area gas groove 41 and the second area gas groove 42 becomes the target temperature.

[0045] It should be noted that, needless to say, the present invention is not limited to any of the above-mentioned embodiments, and can be implemented in various forms as long as they fall within the technical scope of the present invention.

[0046] For example, in the above-mentioned embodiment, two zone heater electrodes correspond to one zone gas groove, but the present invention is not particularly limited thereto. Three or more zone heater electrodes may correspond to one zone gas groove, respectively. Figure 5As shown, the first to third region heater electrodes 131, 132, 133 may correspond to the first to third region gas grooves 141, 142, 143, respectively. Here, an annular outer peripheral protrusion 126 is provided on the outermost periphery of the wafer mounting surface 22a, an annular middle protrusion 127 is provided inside the annular outer peripheral protrusion 127, and an annular inner peripheral protrusion 128 is further provided inside the annular inner peripheral protrusion 128. The first region gas groove 141 is located inside the inner peripheral protrusion 128, the second region gas groove 142 is located between the inner peripheral protrusion 128 and the middle protrusion 127, and the third region gas groove 143 is located between the middle protrusion 127 and the outer peripheral protrusion 126. The first to third area gas grooves 141, 142, 143 correspond to the first to third gas supply areas GZ1, GZ2, GZ3, respectively, and gas is supplied separately through the first to third through holes 141a, 142a, 143a, respectively. The first to third gas supply areas GZ1, GZ2, GZ3 can measure the temperature by inserting the first to third temperature sensors 161, 162, 163 in the first to third sensor holes 151, 152, 153 of the cooling plate 50, respectively. The first to third area heater electrodes 131, 132, 133 are respectively arranged in the first to third heater areas HZ1, HZ2, HZ3. The first heater area HZ1 is a circular area that corresponds to the first gas supply area GZ1, the second heater area HZ2 is an annular area that corresponds to the second gas supply area GZ2, and the third heater area HZ3 is an annular area that corresponds to the third gas supply area GZ3. exist Figure 5 In the embodiment, the same reference numerals are used for the same components as those in the above-mentioned embodiment. Figure 5 The electrostatic chuck heater 20 can obtain the same effects as those of the above-mentioned embodiment.

[0047] Alternatively, one zone heater electrode may correspond to two or more zone gas slots. That is, when the electrostatic chuck heater 20 is viewed from above, two or more zone gas slots may overlap one zone heater electrode. For example, Figure 6 The electrostatic chuck heater 20 is basically the same as Figure 5 The same structure is provided, but the first zone heater electrode 231 is provided in the circular area inside the middle protrusion 127, namely the first heater zone HZ1, and the second zone heater electrode 232 is provided in the annular area between the middle protrusion 127 and the outer peripheral protrusion 126, namely the second heater zone HZ2, and the first zone heater electrode 231 corresponds to the first zone gas groove 141 and the second zone gas groove 142, and at these points Figure 5 Different. Figure 6In the embodiment, the first zone heater electrode 231 corresponds to the first zone gas groove 141 and the second zone gas groove 142, so the temperature of the first heater zone HZ1 can be adjusted by using the gases supplied to the first zone gas groove 141 and the second zone gas groove 142 separately. It should be noted that the second zone heater electrode 232 may correspond to more than two zone gas grooves.

[0048] In the above-mentioned embodiment, the zone heater electrode and the zone gas groove are arranged in a one-to-one manner, but the zone gas groove may be arranged in a portion where the zone heater electrode is not arranged. That is, the zone gas groove may be arranged in the gap between two adjacent zone heater electrodes when the electrostatic chuck heater 20 is viewed from above. For example, Figure 7 The electrostatic chuck heater 20 is basically the same as Figure 5 The same structure as the third area heater electrode 133 is not provided. Figure 5 Different. As a result, the third zone gas groove 143 is provided at a location where the zone heater electrode is not provided. In the case where the thermal uniformity of the portion corresponding to the area where the zone heater electrode is not provided (the annular area without heater that is further outward than the middle protrusion 127) in the chip W placed on the chip placement surface 22a is not good, the thermal conductivity of the gas supplied to the third zone gas groove 143 corresponding to the area without heater is adjusted. In this way, the heat exchange from the periphery of the area without heater to the area without heater can be adjusted. Therefore, the thermal uniformity can be improved. In addition, Figure 8 The electrostatic chuck heater 20 is basically the same as Figure 5 The same structure as the second area heater electrode 132 is not provided. Figure 5 As a result, the second regional gas groove 142 is provided at a location where the regional heater electrode is not provided. In the case where the thermal uniformity of the portion corresponding to the region where the regional heater electrode is not provided (the annular heater-free region between the middle protrusion 127 and the inner peripheral protrusion 128) in the wafer W placed on the wafer placement surface 22a is not good, the thermal conductivity of the gas supplied to the second regional gas groove 142 corresponding to the heater-free region is adjusted. In this way, the heat exchange from the periphery of the heater-free region to the heater-free region can be adjusted. Therefore, the thermal uniformity can be improved.

[0049] Alternatively, the zone gas groove corresponding to one of the two adjacent zone heater electrodes may overlap with the other zone heater electrode. Fig. 9 The electrostatic chuck heater 20 is basically the same as Figure 5 Same structure, but different from Figure 5 That is, when looking down Fig. 9When the electrostatic chuck heater 20 is provided, the first region gas groove 141 overlaps with the first heater zone HZ1 provided with the first region heater electrode 331, and also overlaps with the second heater zone HZ2 provided with the second region heater electrode 332. In addition, the third region gas groove 143 overlaps with the third heater zone HZ3 provided with the third region heater electrode 333, and also overlaps with the second heater zone HZ2 provided with the second region heater electrode 332. As a result, the first region gas groove 141 is arranged in the gap between the adjacent first region heater electrode 331 and the second region heater electrode 332, and the third region gas groove 143 is arranged in the gap between the adjacent second region heater electrode 332 and the third region heater electrode 333. Therefore, by adjusting the thermal conductivity of the gas supplied to the first region gas groove 141, the thermal uniformity of the portion corresponding to the gap between the adjacent first region heater electrode 331 and the second region heater electrode 332 in the wafer W placed on the wafer placement surface 22a can be improved. Furthermore, by adjusting the thermal conductivity of the gas supplied to the third region gas groove 143, the thermal uniformity of the portion of the wafer W mounted on the wafer mounting surface 22a corresponding to the gap between the adjacent second region heater electrode 332 and third region heater electrode 333 can be improved.

[0050] In the above-mentioned implementation mode, if Fig.10 As shown, the outer peripheral protrusion 26 and the inner peripheral protrusion 27 can also be connected by using four bridges 25, so as to divide the second area gas groove 42 (second gas supply area GZ2) into four parts, namely: two small area gas grooves 421, 422 (small areas GZ21, GZ22) and two large area gas grooves 423, 424 (large areas GZ23, GZ24). It should be noted that in Fig.10 In the embodiment, the same reference numerals are used for the same components as those in the above-mentioned embodiment. Fig.10 In the figure, the second area heater electrode 32 corresponds to four area gas grooves 421 to 424. The small area gas grooves 421 and 422 include the folded portion of the second area heater electrode 32. Such a folded portion is likely to become a temperature singularity, but by adjusting the thermal conductivity of the gas supplied to the small area gas grooves 421 and 422, the temperature difference with the surrounding can be reduced. It should be noted that the through hole for inserting the ejector pin for moving the wafer placed on the wafer mounting surface 22a up and down is also likely to become a temperature singularity, so a small area gas groove can also be set around the through hole.

[0051] In the above-mentioned embodiment, the two semicircular areas obtained by dividing the circular area first heater zone HZ1 may be respectively set as heater areas, and the regional heater electrodes may be arranged in a manner corresponding to each heater area. Alternatively, the first heater zone HZ1 may be divided by a plurality of radii passing through the center of the circle of the first heater zone HZ1 and separated by equal angles, and the plurality of sector-shaped areas obtained thereby may be respectively set as heater areas, and the regional heater electrodes may be arranged in a manner corresponding to each heater area.

[0052] In the above-mentioned embodiment, the regional gas groove (gas supply area) may also be set as a fan-shaped area. Fig.11 As shown in the electrostatic chuck heater 20, it has: a circular regional gas groove (gas supply area) inside the inner peripheral protrusion 128; a plurality of (here, 4) fan-shaped regional gas grooves (gas supply areas) obtained by dividing the annular area between the inner peripheral protrusion 128 and the middle protrusion 127 by a bridge portion; and a plurality of (here, 12) fan-shaped regional gas grooves (gas supply areas) obtained by dividing the annular area between the middle protrusion 127 and the outer peripheral protrusion 126 by a bridge portion. Each regional gas groove has at least one through hole for gas supply. In this case, the regional heater electrode can be set corresponding to each regional gas groove, or a plurality of regional gas grooves can be grouped and set corresponding to each group.

[0053] This application claims priority based on Japanese Patent Application No. 2020-016729 filed on February 4, 2020, the entire contents of which are incorporated herein by reference.

Claims

1. An electrostatic chuck heater, comprising: A ceramic plate having a wafer mounting surface on its surface; an electrostatic electrode embedded in the ceramic plate; zone heater electrodes which are buried in the ceramic plate corresponding to the heater zones obtained by dividing the wafer mounting surface into a plurality of zones and can be supplied with power individually; and A zone gas groove is provided independently of the heater zone and corresponds to each of the gas supply zones obtained by dividing the wafer mounting surface into a plurality of zones, and can supply gas individually. The zone gas groove corresponding to one of the two adjacent zone heater electrodes also overlaps with the other zone heater electrode, that is, one zone gas groove corresponds to two zone heater electrodes.

2. The electrostatic chuck heater according to claim 1, wherein: One of the zone heater electrodes corresponds to one or more of the zone gas grooves.

3. The electrostatic chuck heater according to claim 1 or 2, wherein: The zone gas groove is also provided at a location where the zone heater electrode is not provided.

4. The electrostatic chuck heater according to claim 1 or 2, wherein: The regional gas tank independently has a temperature measuring portion.

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