Reaction chamber for depositing semiconductor material comprising a rotating element

Abstract

The reaction chamber (100) is designed for a reactor (100) for depositing a layer of semiconductor material on a substrate; the reaction chamber comprises a tube (110) and an injector (20) and a holder (30), the tube (110) being made of quartz and having a cylindrical or prismatic shape and surrounding a reaction and deposition zone; the injector (20) being arranged to inject a precursor gas into the reaction and deposition zone; the holder (30) being arranged to support the substrate in the reaction and deposition zone during the deposition process; a graphite base element (10, 40, 50) being located inside the tube (110) for heating the reaction and deposition zone and components within the reaction and deposition zone; an inductor system (60, 70) being located outside the tube (110) for providing energy to the base element (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical tube or a prismatic tube being located inside the reaction and deposition zone and surrounding the injector (20).

Description

Field of the Invention

[0001] The present invention relates to a reaction chamber having a rotating element and a reactor for depositing semiconductor materials.

[0002] Technology Status

[0003] As is known, the reaction chamber of a reactor for depositing a layer of semiconductor material on a substrate (sometimes referred to as a "seed") is equipped with reaction and deposition zones. In particular, (see e.g. Figure 1 ——Similar to WO2004111316A1 Figure 2 and Figure 3 and JP2010280527A Figure 1 ) room usually ( Figure 1 1) includes pipe ( Figure 1 2) Syringe ( Figure 1 3) and support ( Figure 1 4); the tube surrounds the reaction and deposition zone (in Figure 1 ; this zone can be considered to be the volume associated with reference mark 6 or the entire volume inside the tubular element 5), the injector is arranged to inject the precursor gas into the reaction and deposition zone, and the holder is arranged to support the substrate in the reaction and deposition zone during the deposition process.

[0004] It is also known that during the deposition process material may be deposited not only on the substrate but also elsewhere, in particular on the outer surface of the syringe (see for example the syringes of WO2006125777A1 and JP2010280527A).

[0005] To overcome this problem, one may try and design the chamber in such a way as to limit spurious deposition on the outer surface of the injector during the deposition process.

[0006] However, it is not impossible to completely avoid such parasitic deposition; this is particularly true for certain types of reactors.

[0007] The Applicant has focused in particular on this problem in reactors for the deposition of layers such as silicon carbide on substrates (more specifically, for the “bulk” growth of “ingots / crystals” of silicon carbide on “seeds” of silicon carbide) at very high temperatures (typically, above 2000°C, and can be as high as 3000°C).

[0008] In fact, in such reactors, the injectors are usually located entirely or largely within the reaction and deposition zones (see, e.g., Figure 1 ), and therefore, the problem of parasitic deposits on the outer surface of the syringe is relevant.

[0009] Overview

[0010] The general object of the invention is to provide a reaction chamber which avoids or at least reduces the disadvantages associated with parasitic deposits on the external surfaces of the injectors. A first possible disadvantage is related to the fact that parasitic deposits tend to generate particles, for example because they adhere poorly to the surface on which they are present. A second possible disadvantage is related to the fact that parasitic deposits are an (indirect) source of compositional variations of the material deposited on the substrate; for example, we recall here the "autodoping" phenomenon. A third possible disadvantage is related to possible mechanical effects attributable to parasitic deposits: difficulties in dismantling the reactor, interference with the moving parts of the reactor.

[0011] This general object is achieved as a result of what is expressed in the accompanying claims forming an integral part of the present description.

[0012] The idea behind the invention is to use an object that moves appropriately within the reaction and deposition zone and that limits parasitic deposits. In particular, these parasitic deposits are removed from the object once they tend to exceed a predetermined thickness and / or leave a predetermined space. This idea is not only applicable to reactor injectors.

[0013] List of Figures

[0014] The present invention will become more apparent from the following detailed description to be considered in conjunction with the accompanying drawings, in which:

[0015] Figure 1 The reaction chamber of a reactor for depositing silicon carbide at very high temperatures according to the prior art is shown very schematically in side section.

[0016] Figure 2 An example of a reaction chamber of a reactor for depositing silicon carbide at very high temperatures according to the invention is schematically shown in side section, and

[0017] Figure 3 Shows Figure 2 Detail of (part of) the room.

[0018] As can be readily appreciated, there are many ways of actually implementing the invention, the invention in its primary advantageous aspects is defined in the appended claims and is not limited to the following detailed description or the appended claims.

[0019] Detailed Description

[0020] exist Figure 1In the reaction chamber 1 of a reactor for depositing a layer of semiconductor material on a substrate, for the sake of simplicity, the injector 3 is depicted as if it has a perfect cylindrical shape. Figure 2 Solutions based on cylindrical or prismatic tubes of revolution should mainly take into account the lateral surfaces of the cylinder, since parasitic deposition occurs especially on this outer surface.

[0021] exist Figure 2 In the embodiment, the syringe is associated with reference numeral 20 and is similar to Figure 1 of syringe3.

[0022] exist Figure 1 In the chamber, material continues to be slowly deposited on the injector 3 during the deposition process.

[0023] exist Figure 2 In the chamber, due to the movable element 80 (having a cylindrical or prismatic surface, which is close to the cylindrical or prismatic surface of the syringe 20, for example at a distance of 2mm-3mm, but not in contact with the cylindrical or prismatic surface of the syringe 20 before parasitic deposition), the thickness of the deposited material is limited, in particular by the distance between the inner surface of the element 80 and the outer surface of the syringe 20; as soon as these deposits approach the inner surface of the element 80 (for example a particularly protruding part of the deposit, such as the tip), the deposits are removed from the element itself.

[0024] Generally, it is advantageous to use an object that moves within the reaction and deposition zone and has at least one surface that moves close to, but not in contact with (before parasitic deposition) at least one surface undergoing parasitic deposition.

[0025] The following will use Figure 2 and Figure 3 An example of an embodiment of a reaction chamber 100 according to the present invention will be described.

[0026] The chamber 100 comprises a tube 110, an injector 20 and a holder 30; the tube 110 is made of quartz and has a cylindrical (or prismatic) shape and surrounds a reaction and deposition zone (in particular, the reaction and deposition zone corresponds substantially to the entire volume inside the tubular element 10); the injector 20 is arranged to inject precursor gas into the reaction and deposition zone; the holder 30 is arranged to support (at the bottom) the substrate in the reaction and deposition zone during the deposition process; the black rectangle in the figure corresponds to the substrate on which a relatively thick semiconductor material has been deposited. There are graphite susceptor elements 10, 40 and 50, which are located inside the tube 110 and are used to heat the reaction and deposition zone and the components inside the reaction and deposition zone; these three elements are cylindrical (or prismatic) tubes; the element 10, which is outside and has a larger diameter, is used to provide overall heating, while the elements 40 and 50 are used to provide local heating. There is an inductor system consisting of assemblies 60 and 70, located outside the tube 110, for providing energy by electromagnetic induction to the base elements 10, 40 and 50. Finally, there is a rotating element 80 in the form of a cylindrical (or prismatic) tube, located inside the reaction and deposition zone and surrounding the injector 20.

[0027] Figure 2 Also shown is a cylindrical (or prismatic) tube 120 of insulating material located between element 110 and element 10 .

[0028] It should be noted that, according to this embodiment, the components 10, 20, 30, 40, 50, 60, 70, 80, 110 and 120 have cylindrical symmetry and their axes coincide (at least substantially coincide) and correspond to the axis AA.

[0029] The element 80 may limit the deposition of semiconductor material on the outer surface of the syringe 20 and / or the inner surface of the bottom base element 50 .

[0030] Preferably, element 80 is made of graphite.

[0031] The element 80 is located between the syringe 20 and the base element 50 .

[0032] The cylindrical tube of the element 80 can be divided axially into tube sections, ie rings, which are mechanically coupled to one another.

[0033] A first cylindrical graphite susceptor element 40 is located at a first (upper) end of the tube 110 and is movable in a direction parallel to the axis AA (movement means not shown in the figure).

[0034] A second cylindrical graphite susceptor element 50 is located at the first (lower) end of the tube 110 and is movable in a direction parallel to the axis AA (the moving means are not shown in the figure).

[0035] The first inductor assembly 60 is at the first (upper) end of the tube 110 and is associated with the first base element 40; it can be moved in a direction parallel to the axis AA (movement means are not shown in the figures).

[0036] The second inductor assembly 70 is at the second (lower) end of the tube 110 and is associated with the second base element 50; it can be moved in a direction parallel to the axis AA (movement means are not shown in the figures).

[0037] At one end of the element 80, the element 80 is mechanically coupled to a base device 82, in particular a crown, which is suitable for receiving a rotational movement from a motor (schematically indicated by a frame 84 in the figure) and transmitting the rotational movement to the element 80; preferably, the base device 82 has more than one gear tooth at its radial periphery; Figure 3 In FIG. 8 , frame 84 is a small toothed pinion (driven by an electric motor) whose teeth mesh with the teeth of the large crown 82 .

[0038] The cylindrical tube of the element 80 may have a gap (not shown in the figures) extending over its length (parallel to the axis AA) and having a transverse section of annular shape.

[0039] According to a first advantageous possibility, the cylindrical tube of the rotating element 80 has a rough or rugged outer surface 80E and / or a rough or rugged inner surface 80I; these surfaces, moving relative to the surfaces of the elements 20 and 50 , favour the abrasive action on parasitic deposits.

[0040] According to a second advantageous possibility, the cylindrical tube of the rotating element 80 has an outer surface 80E with at least one helical thread and / or an inner surface 80I with at least one helical thread; these moving surfaces, which move relative to the surfaces of the elements 20 and 50, facilitate the movement of gases and / or the transport of solid material (for example downwards).

[0041] It should be noted that the first possibility and the second possibility can be combined.

[0042] exist Figure 3, a first gap is visible between the outer cylindrical surface 20E of the syringe 20 and the inner cylindrical surface 80I of the element 80, and a second gap is visible between the outer cylindrical surface 80E of the element 80 and the inner cylindrical surface 50I of the base element 50. According to an exemplary embodiment, the thickness of the first gap (e.g., 1 mm-10 mm) is smaller than the thickness of the second gap (e.g., 1 mm-10 mm); however, in general, both thicknesses may also be the same.

[0043] According to the described embodiment, the rotating element has the shape of a cylindrical or prismatic tube; however, first variants can be envisaged in which the rotating element has a different shape, such as a truncated cone or pyramidal trunk or a two-base sphere segment or ...

[0044] The reaction chamber according to the invention may advantageously comprise means for removing dust, ie dust generated by the rotating element 80 as a result of its movement; the previously mentioned helical thread may be considered as part of these means.

[0045] These devices may correspond to airflow inlets and / or airflow outlets. For example, consider Figure 3 There is a lower wall 90 of the reaction chamber having a first annular zone 92 and a second annular zone 94 highlighted; in one or both of these zones a set of holes may be provided which are suitable for sucking dust from the void.

[0046] The reaction chamber according to the invention may advantageously comprise a cleaning assembly fluidly coupled to the gas flow inlet and / or gas flow outlet. Preferably, the assembly is adapted to be inactive during the deposition process so as not to generate unwanted gas flows during the deposition process.

[0047] The reaction chamber according to the invention advantageously comprises a moving assembly mechanically coupled to the rotating element 80 and adapted to transmit a rotational movement to the rotating element 80; Figure 3 Elements 82 and 84 may be considered part of the assembly.

[0048] The moving assembly may be suitable for imparting an alternating rotational movement to the element 80 .

[0049] The moving assembly may be adapted to impart an alternating translational movement to the element 80 .

[0050] A reaction chamber such as the one just described finds use in particular in reactors for depositing layers such as silicon carbide on substrates, in particular in reactors suitable for carrying out deposition processes at very high temperatures.

Claims

1. A reaction chamber (100) for a reactor for depositing a layer of semiconductor material on a substrate, the reaction chamber (100) comprising a tube (110) and an injector (20) and a holder (30), wherein the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone, wherein the injector (20) is arranged to inject a precursor gas into the reaction and deposition zone, wherein the holder (30) is arranged to support the substrate in the reaction and deposition zone during a deposition process, wherein a graphite susceptor element is located inside the tube (110) for heating the reaction and deposition zone and components within the reaction and deposition zone, wherein an inductor system is located outside the tube (110) for providing energy to the graphite susceptor element by electromagnetic induction, wherein a rotating element (80) in the form of a cylindrical tube or a prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20); in, a first cylindrical or prismatic graphite base element (40) is at a first end of the tube (110) and a second cylindrical or prismatic graphite base element (50) is at a second end of the tube (110), and Wherein, the rotating element (80) and the retainer (30) are different and separate.

2. The reaction chamber (100) according to claim 1, wherein: The rotating element (80) is arranged so as to prevent semiconductor material from being deposited on the outer surface of the syringe (20) and / or on the inner surface of the second cylindrical or prismatic graphite base element (50) at the bottom.

3. The reaction chamber (100) according to claim 1, wherein: The first cylindrical or prismatic graphite base element (40) is movable in a direction parallel to an axis (AA) of the tube (110), and the second cylindrical or prismatic graphite base element (50) is movable in a direction parallel to the axis (AA) of the tube (110).

4. The reaction chamber (100) according to claim 2, wherein: The first cylindrical or prismatic graphite base element (40) is movable in a direction parallel to an axis (AA) of the tube (110), and the second cylindrical or prismatic graphite base element (50) is movable in a direction parallel to the axis (AA) of the tube (110).

5. The reaction chamber (100) according to claim 3, wherein: A first inductor assembly (60) is at a first end of the tube (110) and is associated with the first cylindrical or prismatic graphite base element (40), and a second inductor assembly (70) is at a second end of the tube (110) and is associated with the second cylindrical or prismatic graphite base element (50).

6. The reaction chamber (100) according to claim 4, wherein: A first inductor assembly (60) is at a first end of the tube (110) and is associated with the first cylindrical or prismatic graphite base element (40), and a second inductor assembly (70) is at a second end of the tube (110) and is associated with the second cylindrical or prismatic graphite base element (50).

7. The reaction chamber (100) according to any one of claims 1 to 6, wherein: The rotating element (80) is made of graphite.

8. The reaction chamber (100) according to any one of claims 1 to 6, wherein: The rotating element (80) is located between the injector (20) and the second cylindrical or prismatic graphite base element (50).

9. The reaction chamber (100) according to claim 7, wherein: The rotating element (80) is located between the injector (20) and the second cylindrical or prismatic graphite base element (50).

10. The reaction chamber (100) according to any one of claims 1 to 6 and 9, wherein: The cylindrical or prismatic tube of the rotating element (80) is divided axially into tube segments which are mechanically coupled to one another.

11. The reaction chamber (100) according to claim 7, wherein: The cylindrical or prismatic tube of the rotating element (80) is divided axially into tube segments which are mechanically coupled to one another.

12. The reaction chamber (100) according to claim 8, wherein: The cylindrical or prismatic tube of the rotating element (80) is divided axially into tube segments which are mechanically coupled to one another.

13. The reaction chamber (100) according to any one of claims 1-6, 9 and 11-12, wherein: The rotating element (80) is mechanically coupled at an end to a base device (82), the base device (82) being adapted to receive rotational motion from a motor (84) and to transmit the rotational motion to the rotating element (80).

14. The reaction chamber (100) according to claim 7, wherein: The rotating element (80) is mechanically coupled at an end to a base device (82), the base device (82) being adapted to receive rotational motion from a motor (84) and to transmit the rotational motion to the rotating element (80).

15. The reaction chamber (100) according to claim 8, wherein: The rotating element (80) is mechanically coupled at an end to a base device (82), the base device (82) being adapted to receive rotational motion from a motor (84) and to transmit the rotational motion to the rotating element (80).

16. The reaction chamber (100) according to claim 10, wherein: The rotating element (80) is mechanically coupled at an end to a base device (82), the base device (82) being adapted to receive rotational motion from a motor (84) and to transmit the rotational motion to the rotating element (80).

17. The reaction chamber (100) according to claim 13, wherein: The base device (82) has more than one gear tooth at its radial periphery.

18. The reaction chamber (100) according to any one of claims 14 to 16, wherein: The base device (82) has more than one gear tooth at its radial periphery.

19. The reaction chamber (100) according to any one of claims 1-6, 9, 11-12 and 14-17, wherein: The cylindrical or prismatic tube of the rotating element (80) has a gap extending along its length and having a transverse cross-section that is annular in shape.

20. The reaction chamber (100) according to claim 7, wherein: The cylindrical or prismatic tube of the rotating element (80) has a gap extending along its length and having a transverse cross-section that is annular in shape.

21. The reaction chamber (100) according to claim 8, wherein: The cylindrical or prismatic tube of the rotating element (80) has a gap extending along its length and having a transverse cross-section that is annular in shape.

22. The reaction chamber (100) according to claim 10, wherein: The cylindrical or prismatic tube of the rotating element (80) has a gap extending along its length and having a transverse cross-section that is annular in shape.

23. The reaction chamber (100) of claim 13, wherein: The cylindrical or prismatic tube of the rotating element (80) has a gap extending along its length and having a transverse cross-section that is annular in shape.

24. The reaction chamber (100) of claim 18, wherein: The cylindrical or prismatic tube of the rotating element (80) has a gap extending along its length and having a transverse cross-section that is annular in shape.

25. The reaction chamber (100) according to any one of claims 1-6, 9, 11-12, 14-17 and 20-24, wherein: The cylindrical or prismatic tube of the rotating element (80) has a rough or uneven outer surface (80E) and / or a rough or uneven inner surface (80I).

26. The reaction chamber (100) according to claim 7, wherein: The cylindrical or prismatic tube of the rotating element (80) has a rough or uneven outer surface (80E) and / or a rough or uneven inner surface (80I).

27. The reaction chamber (100) according to claim 8, wherein: The cylindrical or prismatic tube of the rotating element (80) has a rough or uneven outer surface (80E) and / or a rough or uneven inner surface (80I).

28. The reaction chamber (100) according to claim 10, wherein: The cylindrical or prismatic tube of the rotating element (80) has a rough or uneven outer surface (80E) and / or a rough or uneven inner surface (80I).

29. The reaction chamber (100) of claim 13, wherein: The cylindrical or prismatic tube of the rotating element (80) has a rough or uneven outer surface (80E) and / or a rough or uneven inner surface (80I).

30. The reaction chamber (100) of claim 18, wherein: The cylindrical or prismatic tube of the rotating element (80) has a rough or uneven outer surface (80E) and / or a rough or uneven inner surface (80I).

31. The reaction chamber (100) of claim 19, wherein: The cylindrical or prismatic tube of the rotating element (80) has a rough or uneven outer surface (80E) and / or a rough or uneven inner surface (80I).

32. The reaction chamber (100) according to any one of claims 1-6, 9, 11-12, 14-17, 20-24 and 26-31, wherein The cylindrical or prismatic tube of the rotating element (80) has an outer surface (80E) with at least one helical thread and / or an inner surface (80I) with at least one helical thread.

33. The reaction chamber (100) according to claim 7, wherein: The cylindrical or prismatic tube of the rotating element (80) has an outer surface (80E) with at least one helical thread and / or an inner surface (80I) with at least one helical thread.

34. The reaction chamber (100) according to claim 8, wherein: The cylindrical or prismatic tube of the rotating element (80) has an outer surface (80E) with at least one helical thread and / or an inner surface (80I) with at least one helical thread.

35. The reaction chamber (100) of claim 10, wherein: The cylindrical or prismatic tube of the rotating element (80) has an outer surface (80E) with at least one helical thread and / or an inner surface (80I) with at least one helical thread.

36. The reaction chamber (100) of claim 13, wherein: The cylindrical or prismatic tube of the rotating element (80) has an outer surface (80E) with at least one helical thread and / or an inner surface (80I) with at least one helical thread.

37. The reaction chamber (100) of claim 18, wherein: The cylindrical or prismatic tube of the rotating element (80) has an outer surface (80E) with at least one helical thread and / or an inner surface (80I) with at least one helical thread.

38. The reaction chamber (100) of claim 19, wherein: The cylindrical or prismatic tube of the rotating element (80) has an outer surface (80E) with at least one helical thread and / or an inner surface (80I) with at least one helical thread.

39. The reaction chamber (100) of claim 25, wherein: The cylindrical or prismatic tube of the rotating element (80) has an outer surface (80E) with at least one helical thread and / or an inner surface (80I) with at least one helical thread.

40. The reaction chamber (100) according to any one of claims 1-6, 9, 11-12, 14-17, 20-24, 26-31 and 33-39, comprising means for removing dust generated by the rotating element (80).

41. The reaction chamber (100) according to claim 7, comprising means for removing dust generated by the rotating element (80).

42. The reaction chamber (100) according to claim 8, comprising means for removing dust generated by the rotating element (80).

43. The reaction chamber (100) according to claim 10, comprising means for removing dust generated by the rotating element (80).

44. The reaction chamber (100) according to claim 13, comprising means for removing dust generated by the rotating element (80).

45. The reaction chamber (100) according to claim 18, comprising means for removing dust generated by the rotating element (80).

46. ​​The reaction chamber (100) according to claim 19, comprising means for removing dust generated by the rotating element (80).

47. The reaction chamber (100) according to claim 25, comprising means for removing dust generated by the rotating element (80).

48. The reaction chamber (100) according to claim 32, comprising means for removing dust generated by the rotating element (80).

49. The reaction chamber (100) according to claim 40, wherein: The device is an air flow inlet and / or an air flow outlet (92, 94).

50. The reaction chamber (100) according to any one of claims 41 to 48, wherein: The device is an air flow inlet and / or an air flow outlet (92, 94).

51. The reaction chamber (100) of claim 49, wherein: The gas flow inlet and / or gas flow outlet (92, 94) are located at the bottom (90) of the reaction chamber.

52. The reaction chamber (100) of claim 50, wherein: The gas flow inlet and / or gas flow outlet (92, 94) are located at the bottom (90) of the reaction chamber.

53. The reaction chamber (100) of any one of claims 49 and 51-52, comprising a cleaning assembly fluidly coupled to the gas flow inlet and / or gas flow outlet (92, 94).

54. The reaction chamber (100) of claim 50, comprising a cleaning assembly fluidly coupled to the gas flow inlet and / or gas flow outlet (92, 94).

55. The reaction chamber (100) of any one of claims 49 and 51-52, comprising a cleaning assembly fluidly coupled to the gas flow inlet and / or gas flow outlet (92, 94) and arranged to be inactive during a deposition process.

56. The reaction chamber (100) of claim 50, comprising a cleaning assembly fluidly coupled to the gas flow inlet and / or gas flow outlet (92, 94) and arranged to be inactive during a deposition process.

57. A reaction chamber (100) according to any one of claims 1-6, 9, 11-12, 14-17, 20-24, 26-31, 33-39, 41-49, 51-52, 54 and 56, comprising a moving assembly, which is mechanically connected to the rotating element (80) and is arranged to transmit rotational motion to the rotating element (80).

58. The reaction chamber (100) of claim 7, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

59. The reaction chamber (100) of claim 8, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

60. The reaction chamber (100) of claim 10, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit a rotational motion to the rotating element (80).

61. The reaction chamber (100) of claim 13, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

62. The reaction chamber (100) of claim 18, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

63. The reaction chamber (100) of claim 19, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

64. The reaction chamber (100) of claim 25, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

65. The reaction chamber (100) of claim 32, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

66. The reaction chamber (100) of claim 40, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

67. The reaction chamber (100) of claim 50, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

68. The reaction chamber (100) of claim 53, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

69. The reaction chamber (100) of claim 55, comprising a moving assembly mechanically coupled to the rotating element (80) and arranged to transmit rotational motion to the rotating element (80).

70. The reaction chamber (100) of claim 57, wherein: The moving assembly is arranged to impart an alternating rotational movement to the rotating element (80).

71. The reaction chamber (100) according to any one of claims 58 to 69, wherein: The moving assembly is arranged to impart an alternating rotational movement to the rotating element (80).

72. The reaction chamber (100) of claim 57, wherein: The moving assembly is arranged to also transmit an alternating translational movement to the rotating element (80).

73. The reaction chamber (100) according to any one of claims 58 to 69, wherein: The moving assembly is arranged to also transmit an alternating translational movement to the rotating element (80).

74. A reactor comprising a reaction chamber (100) according to any one of claims 1-73.

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