Method and related apparatus for suppressing line bending during deposition of conductive materials

Abstract

The present application relates to methods and related apparatus for inhibiting line bending during deposition of conductive materials. The method of forming a structure includes forming a pattern of elongated features extending vertically from a base structure. A conductive material is formed on the elongated features. After completing the formation of the pattern of elongated features, the elongated features, the conductive material, or both are exposed to at least one surface treatment gas. The at least one surface treatment gas includes at least one species, the at least one species being formulated to reduce attraction or cohesion at the surface of the conductive material. Apparatus and additional methods are also described.

Description

[0001] Priority claim

[0002] This application claims the benefit of the filing date of U.S. Patent Application No. 16 / 773,636, filed on January 27, 2020, for "Methods for Inhibiting Line Bending During Conductive Material Deposition, and Related Apparatus." Technical Field

[0003] Embodiments of the present disclosure relate to the field of microelectronic device design and fabrication. More specifically, embodiments of the present disclosure relate to methods for processing conductive materials, as well as depositing them on elongated features to inhibit bending of the elongated features. The present disclosure also relates to devices (e.g., structures, microelectronic devices, and electronic systems) that include the processed conductive materials. Background Art

[0004] Microelectronic device designers often desire to increase the density of features on a given substrate surface area (e.g., on a semiconductor wafer) by reducing the size of individual features and by reducing the separation distance between adjacent features. At small dimensions, forming certain materials can present challenges. For example, a material with the potential for optimal performance characteristics (e.g., low resistivity) can present increased formation challenges at small dimensions. Therefore, microelectronic device designers may turn to other materials that can be more easily or more reliably formed at small dimensions, even if such other materials do not have the optimal performance characteristics (e.g., higher resistivity).

[0005] Other challenges arise when designing and manufacturing microelectronic devices with features and materials that are relatively close to each other. For example, small-sized and relatively close features and materials may be more likely to succumb to external or internal forces, such as forces on or at the surfaces of the related features or materials. Such forces may hinder efforts to construct features and materials.

[0006] Figures 1A to 1D Explain the challenges mentioned above. Figure 1A In FIG. 1 , an idealized structure 100 is schematically illustrated in elevation cross section, and Figure 1BThe idealized structure 100 is schematically illustrated from a top view, a plan view, and a cross-sectional view. The idealized structure 100 includes elongated features 102 extending vertically from a substrate 104. The elongated features 102 are patterned in parallel lines with small spacing (e.g., with a small dimension from one point of one of the elongated features 102 to the same point of an adjacent elongated feature 102). The elongated features 102 and the openings (e.g., trenches) separating one elongated feature 102 from its adjacent elongated features can be at an aspect ratio (e.g., a high height-to-width ratio) of, for example, greater than 5:1. For example, the ratio of the height H to each of the feature width W(F) and the trench width W(T) can be greater than 5:1.

[0007] A microelectronic device designer may wish to uniformly form a coating of conductive material 106 along all surfaces of elongated features 102 and on the upper surface of substrate 104 in openings (e.g., trenches) between elongated features 102. Thus, a microelectronic device designer may ideally intend to Figure 1A and Figure 1B The ideal structure 100 forms a conductive material 106 wherein each coated elongated feature 102 is substantially parallel to its adjacent coated elongated feature 102 and wherein opposing sidewalls 114 of the conductive material 106 are substantially perpendicular and uniformly spaced apart from one another.

[0008] Steering Figure 1C and Figure 1D , illustrating a more realistic result of the efforts of microelectronic device designers to form a coating of conductive material 106. A more realistic structure 108 may not include Figure 1B Rather than having completely parallel elongated features 102 with completely perpendicular opposing sidewalls 114, the invention includes curved features 110 in which the opposing sidewalls 114 are in physical contact with each other, wherein the conductive material 106 of one curved feature 110 is in physical contact with the conductive material 106 of an adjacent curved feature 110, thereby forming a contact point (referred to herein as a "pinch point", e.g., Figure 1D The pinch point 112 described in FIG.

[0009] The bending and resulting pinch points 112 may be the result of the interaction of surface forces in forming the conductive material 106 device. For example, the conductive material 106 may exhibit attractive or cohesive surface forces during deposition, and at such small dimensions and high aspect ratios, adjacent structures may succumb to the forces and bend toward each other to form one of the pinch points 112. These pinch points 112 may prevent subsequent manufacturing processes, such as those intended to electrically isolate each of the elongated features 102 (and the conductive material 106 thereon) from its adjacent elongated features. For example, ideally, Figure 1A and Figure 1BThe idealized structure 100 may be further processed to selectively remove (e.g., etch) the conductive material 106 from between each of the elongated features 102 so that the conductive material 106 on one of the elongated features 102 is physically and electrically isolated from the conductive material 106 on the adjacent elongated features 102. In practice, however, Figure 1C and Figure 1D The presence of pinch points 112 of the more realistic structure 108 may inhibit, prevent, or at least complicate efforts to remove (eg, etch) the conductive material 106 from between adjacent curved features 110 .

[0010] Not all conductive materials 106 exhibit the same attractive or cohesive surface forces during formation. Therefore, a microelectronic device designer may resort to selecting a material that does not exhibit these forces during formation, rather than a material that does exhibit these forces as the conductive material 106. However, in cases where the latter material will exhibit a lower resistivity than the former, the microelectronic device designer's choice sacrifices manufacturing and structural reliability rather than electrical performance. Therefore, material selection and device performance take a back seat to device manufacturing reliability.

[0011] Thus, microelectronic device designers continue to be challenged in the fabrication of microelectronic devices having closely spaced high aspect ratio features upon which another material (eg, conductive material 106) is formed. Summary of the invention

[0012] A method of forming a structure is disclosed. The method includes forming a pattern of elongated features extending perpendicularly from a base structure. A conductive material is formed on the elongated features. After completing forming the pattern of elongated features, the elongated features, the conductive material, or both are exposed to at least one surface treatment gas. The surface treatment gas includes at least one species, the at least one species being formulated to reduce attraction or cohesion at a surface of the conductive material.

[0013] Also disclosed is a device comprising an elongated feature extending vertically from a base structure. A conductive material is disposed on the elongated feature. The conductive material has a thickness of less than about 1×10 -6 The at least one species is in or on the conductive material proximate to opposite sidewalls of the conductive material between adjacent ones of the elongated features. The at least one species includes one or more of silicon, titanium, chlorine, carbon, hydrogen, nitrogen, and oxygen.

[0014] In addition, a method of forming a microelectronic device is disclosed. The method includes forming an elongated feature extending from a base structure. A conductive material is deposited on opposite sidewalls of the elongated feature. At least one surface treatment gas is introduced into a deposition chamber to expose the elongated feature, the conductive material, or both to the at least one surface treatment gas. The at least one surface treatment gas includes a species that is formulated to reduce one or more of attractive forces and cohesive forces between opposing surfaces of the conductive material. After introducing the at least one surface treatment gas, a portion of the conductive material is removed from between the opposite sidewalls of the elongated feature. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1A A schematic cross-sectional elevation view of an ideal structure of a microelectronic device.

[0016] Figure 1B for Figure 1A A cross-sectional and top plan schematic diagram of an idealized structure, wherein for ease of viewing, only the top view is illustrated in the cross-sectional view.

[0017] Figure 1C For a more realistic structure of microelectronic devices (with Figure 1A Schematic diagram of a cross-sectional elevation view of the structure compared to the structure of FIG.

[0018] Figure 1D for Figure 1C A cross-sectional, top-view plan schematic diagram of a more realistic structure, wherein for ease of viewing only the top-view surface is illustrated in the cross-section.

[0019] Figure 2 Schematic cross-sectional elevation view during a processing stage in fabricating a microelectronic device structure according to an embodiment of the present disclosure, wherein the structure has been patterned to define elongated features on which conductive material is formed, and wherein the dashed box in the upper right corner of the figure is illustrated as an enlargement of the corresponding smaller dashed box.

[0020] Figure 3 In the process stage of manufacturing the microelectronic device structure according to the embodiment of the present disclosure (in Figure 2 Schematic cross-sectional elevation view during the process described in , wherein a coating of conductive material has been formed on Figure 2 in terms of structure.

[0021] Figure 4 In the process stage of manufacturing the microelectronic device structure according to the embodiment of the present disclosure (in Figure 3 ) during a process stage described in , wherein additional conductive material has been formed on Figure 3 on the structure to fill openings (e.g., trenches) between elongated features.

[0022] Figure 5According to the embodiment of the present disclosure, Figure 3 Schematic cross-sectional elevation view during a processing stage in which a surface treatment is performed between deposition of portions of conductive material.

[0023] Figure 6 According to the embodiment of the present disclosure, Figure 4 During the processing phase and Figure 5 Schematic cross-sectional elevation view after a processing stage of , in which another surface treatment is performed before depositing an additional portion of conductive material.

[0024] Figure 7 According to the embodiment of the present disclosure, Figure 3 Schematic cross-sectional elevation view during a processing stage in which surface treatment is performed after completion of deposition of the conductive material.

[0025] Figure 8 According to the embodiment of the present disclosure, Figure 3 Schematic cross-sectional elevation view during a processing stage in which surface treatment is performed before deposition of the conductive material.

[0026] Fig. 9 FIG. 1 is a schematic cross-sectional elevation view of the structure of a microelectronic device and its processing stages according to an embodiment of the present disclosure, which stages may be Figure 3 , Figure 5 , Figure 7 or Figure 8 After any of the stages.

[0027] Fig.10 FIG. 1 is a schematic cross-sectional elevation view of a microelectronic device structure and processing stages thereof according to an embodiment of the present disclosure, the stages of which may be Figure 4 or Figure 6 After any of the stages.

[0028] Fig.11A According to the embodiment of the present disclosure Fig. 9 or Fig.10 An enlarged schematic diagram of a dashed box A of any of the above, wherein a treatment species is disposed along the interface between the conductive material and the patterned elongated features in the substrate, the treatment species originating from a surface treatment performed prior to deposition of the conductive material, such as in Figure 8 in the manufacturing stage.

[0029] Fig. 11B According to the embodiment of the present disclosure Fig. 9 or Fig.10 , wherein the treatment species is disposed along the interface between the portions of the conductive material, the treatment species originating from a surface treatment performed between the portions of the conductive material being deposited, as in Figure 5 in the manufacturing stage.

[0030] Fig. 11C According to the embodiment of the present disclosure Fig. 9 FIG. 1 is an enlarged schematic diagram of a dashed box C of FIG. 1 , wherein the treatment species are disposed along the outer surface of the conductive material, the treatment species originating from a surface treatment performed after deposition of the conductive material, as in FIG. Figure 7 in the manufacturing stage.

[0031] Fig.11D According to the embodiment of the present disclosure Fig. 9 or Fig.10 An enlarged schematic diagram of a dashed box D of any of the above, wherein the treatment species are disposed along multiple interfaces between portions of the conductive material, the treatment species resulting from multiple surface treatments, at least one of which is performed between depositions of portions of the conductive material, such as in Figure 6 in the manufacturing stage.

[0032] Fig.11E According to the embodiment of the present disclosure Fig. 9 or Fig.10 An enlarged schematic diagram of a dashed box D of any of , wherein a treatment species is dispersed throughout the volume of the conductive material, the treatment species originating from at least one surface treatment performed before, during and / or after deposition of the conductive material.

[0033] Fig.12 is a schematic block diagram of an electronic system according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0034] According to an embodiment of the present disclosure, a method includes at least one surface treatment performed in conjunction with (e.g., before, during, and / or after) depositing a conductive material on an elongated feature. The surface treatment reduces the attractive or cohesive forces of the outer surfaces of the conductive material. As a result, opposing surfaces of the conductive material are inhibited or prevented from bending toward each other to form a pinch point. Thus, structures (e.g., microelectronic device structures), apparatus (e.g., microelectronic devices such as memory devices), and systems (e.g., electronic systems) can be formed by methods that enable the use of conductive materials (e.g., low resistivity conductive materials) that could not otherwise be used in situations where such conductive materials would result in bending and pinch points during fabrication.

[0035] As used herein, the term "in conjunction with" when used with respect to a surface treatment and a material forming action (e.g., material formation, such as deposition) means and refers to the surface treatment and material formation being performed close in time to each other or simultaneously. For example, a surface treatment performed "in conjunction with" material deposition means and includes a surface treatment performed before (e.g., immediately before), simultaneously with (e.g., during), and / or after (e.g., immediately after) material deposition. To continue with the example, a surface treatment performed "in conjunction with" material deposition also means and includes performing the surface treatment and material deposition in one or more repeated actions, some of which may be before, during, or after the other. In some embodiments, surface treatment performed "in conjunction with" material deposition means and includes surface treatment performed at any time between (a) forming or otherwise providing a structure on which the deposited material is to be deposited as the next deposited material (e.g., after fully completing the formation of elongated features (e.g., after patterning the structure to form the elongated features, such as by etching, and any related cleaning or drying actions); (b) forming another material having different properties than the material formed by the material forming action "in conjunction with" the surface treatment (e.g., a non-conductive material instead of a conductive material). In some embodiments, surface treatment performed "in conjunction with" material deposition means and includes surface treatment performed at any time between (a) and (b): (a) introducing the structure into a deposition chamber where material deposition is to be performed, (b) removing the structure from the deposition chamber after the material deposition is completed.

[0036] As used herein, the term "species" means and includes one or more elements (e.g., molecules, chemical groups) that make up or are derived from a material or composition. As a non-limiting example, in the case of a species including SiH 4 In the composition of 4 species; in the 8 H 24 N 4 In the composition of Ti, each of carbon (C), hydrogen (H), nitrogen (N), and titanium (Ti) may be referred to herein as C 8 H 24 N 4 Ti species; in the presence of TiCl 4 In the composition of 4 species; and in the presence of BCl 3 In the composition of 3species, whether such species is present in the original material or composition at the time of reference or is alternatively in or on another material or composition.

[0037] As used herein, the term "treatment species" means and includes species derived from a surface treatment formulated composition.

[0038] As used herein, the term "trace species" means and includes an element or elements, such as atoms or molecules, that originate from one material or composition and are thus present in trace amounts on or within the volume of another material, for example, an atomic fraction (the number of atoms of the process species relative to the number of atoms of the other material in the other material) ranging from about 1×10 -8 To about 1×10 -1 The atomic fraction (atoms of the treatment species relative to atoms of other species within other materials) may be determined based on the total volume of the material (e.g., conductive material) of the identified characteristic of the structure or region (e.g., discrete region) of the structure, although the treatment species may be, for example, concentrated at or near a surface of the material, concentrated at or near an interface between portions of the material, and / or dispersed throughout the volume (e.g., of the structure or region) of the structure.

[0039] As used herein, the term "opening" means a volume extending through at least one structure or at least one material, leaving a gap in the at least one structure or at least one material, or a volume extending between structures or materials, leaving a gap between structures or materials. Unless otherwise described, an "opening" is not necessarily free of material. In other words, an "opening" is not necessarily a pore space. An "opening" formed in a structure or material or between structures or materials may include a structure or material, rather than a structure or material in which or between which an opening is formed. In addition, a structure or material "exposed" in an opening is not necessarily in contact with the atmosphere or a non-solid environment. A structure or material "exposed" in an opening may be adjacent to or in contact with other structures or materials disposed in the opening.

[0040] As used herein, the term "substrate" means and includes a base material or other structure on which components, such as components within a memory cell, are formed. The substrate may be a semiconductor substrate, a base semiconductor material on a support structure, a metal electrode, or a semiconductor substrate formed with one or more materials, structures, or regions thereon. The substrate may be a conventional silicon substrate or other bulk substrate including a semiconducting material. As used herein, the term "bulk substrate" means and includes not only silicon wafers, but also silicon-on-insulator ("SOI") substrates, such as silicon-on-sapphire ("SOS") substrates or silicon-on-glass ("SOG") substrates, silicon epitaxial layers on a base semiconductor foundation, and other semiconductor or optoelectronic materials, such as silicon-germanium (Si1-x Ge x , where x is a mole fraction, for example, between 0.2 and 0.8), germanium (Ge), gallium arsenide (GaAs), gallium nitride (GaN), and indium phosphide (InP), among others. In addition, when a "substrate" is referred to in the following description, previous processing stages may be utilized to form materials, structures, or junctions in a base semiconductor structure or foundation.

[0041] As used herein, the term "horizontal" or "lateral" means and includes a direction parallel to the main surface of the substrate on which the reference material or structure is positioned. The width and length of the corresponding material or structure can be defined as the dimensions in the horizontal plane. With reference to the figures, the "horizontal" direction may be perpendicular to the indicated "Z" axis, and may be parallel to the indicated "X" axis, the indicated "Y" axis, and / or the "XY" plane. For ease of description, these terms may be used to describe the relationship between one element or feature and another element or feature, as illustrated in the figure. Unless otherwise specified, spatial relative terms are intended to encompass different orientations of elements and features other than the orientation specified in the figure. For example, if the material in the figure is rotated about 90 degrees, the element described as "horizontal" or "lateral" will be oriented vertically or longitudinally. Therefore, the terms "horizontal" and "lateral" may encompass both the orientation as illustrated in the figure and the orientation illustrated by the figure rotated clockwise or counterclockwise, depending on the context in which the terms are used, which will be apparent to a person of ordinary skill in the art. The materials may be otherwise oriented (rotated more or less than 90 degrees, inverted, etc.) and the spatially relative descriptors used herein interpreted accordingly.

[0042] As used herein, the term "vertical" or "longitudinal" means and includes a direction perpendicular to the main surface of the substrate on which the reference material or structure is positioned. The height of the corresponding material or structure can be defined as a dimension in a vertical plane. With reference to the figures, the "vertical" direction can be a direction along the indicated "Z" axis. For ease of description, these terms can be used to describe the relationship of one element or feature to another element or feature, as illustrated in the figures. Unless otherwise specified, spatial relative terms are intended to encompass different orientations of elements and features other than the orientation specified in the figures. For example, if the material in the figure is rotated about 90 degrees, the element described as "vertical" or "longitudinal" will be oriented horizontally or laterally. Therefore, the terms "vertical" and "longitudinal" can encompass both the orientation as illustrated in the figure and the orientation illustrated by the figure rotated clockwise or counterclockwise, depending on the context in which the terms are used, which will be apparent to a person of ordinary skill in the art. The material can be oriented in other ways (rotated more or less than 90 degrees, inverted, etc.) and the spatial relative descriptors used herein are interpreted accordingly.

[0043] As used herein, the terms "thickness" or "thinness" mean and include a dimension in a straight line direction normal to the nearest surface of an immediately adjacent material or structure that has a different composition or is otherwise distinguished from the material or structure whose thickness, thinness, or height is being discussed.

[0044] As used herein, the term "between" is a spatially relative term used to describe the relative disposition of one material, structure, or substructure relative to at least two other materials, structures, or substructures. The term "between" can encompass both the placement of one material, structure, or substructure directly adjacent to other materials, structures, or substructures, and the placement of one material, structure, or substructure indirectly adjacent to other materials, structures, or substructures.

[0045] As used herein, the term "proximity" is a spatially relative term used to describe the placement of one material, structure or substructure relative to another material, structure or substructure. The term "proximity" includes indirectly adjacent to, directly adjacent to, and disposed within.

[0046] As used herein, the term "adjacent" when referring to a material or structure means and refers to the next closest material or structure of the identified composition or characteristic. Materials or structures having other components or characteristics in addition to the identified components or characteristics may be positioned between a material or structure and its "adjacent" material or structure having the identified components or characteristics. For example, a structure of material X that is "adjacent" to a structure of material Y is, for example, the first material X structure of a plurality of material X structures that is the next closest particular structure to material Y. An "adjacent" material or structure may be directly or indirectly adjacent to a structure or material having the identified components or characteristics.

[0047] As used herein, the terms "about" and "approximately" when used with respect to a numerical value of a particular parameter include that numerical value, and the degree of variance from the numerical value as understood by one of ordinary skill in the art is within the acceptable tolerance range for the particular parameter. For example, "about" or "approximately" for a numerical value may include additional numerical values ​​within the range of 90.0% to 110.0% of the numerical value, such as within the range of 95.0% to 105.0% of the numerical value, within the range of 97.5% to 102.5% of the numerical value, within the range of 99.0% to 101.0% of the numerical value, within the range of 99.5% to 100.5% of the numerical value, or within the range of 99.9% to 100.1% of the numerical value.

[0048] As used herein, the term "substantially" with respect to a parameter, property, or condition means and includes a parameter, property, or condition that is equal to or within a degree of variance of a given value such that one of ordinary skill in the art would understand that such a given value is acceptably met, such as within an acceptable manufacturing tolerance. For example, depending on the particular parameter, property, or condition that is substantially met, the parameter, property, or condition may be "substantially" a given value when the value is at least 90.0% met, at least 95.0% met, at least 99.0% met, or even at least 99.9% met.

[0049] As used herein, referring to an element as being "on" or "above" another element means and includes that the element is directly located at the top of another element, adjacent to (e.g., laterally adjacent to, vertically adjacent to) another element, below another element, or in direct contact with another element. It also includes that the element is indirectly located at the top of another element, adjacent to (e.g., laterally adjacent to, vertically adjacent to) another element, below another element, or near another element, with other elements present between them. In contrast, when an element is referred to as being "directly on" another element or "directly adjacent to" another element, there is no intermediate element. In addition, as used herein, referring to an element (e.g., species) as being "on" or "above" another element (e.g., material) means and includes that the element (e.g., species) is (e.g., inserted into) another element (e.g., material).

[0050] As used herein, for ease of description, other spatially relative terms (e.g., "below," "lower," "bottom," "above," "upper," "top," etc.) may be used to describe the relationship of one element or feature to another element or feature, as illustrated in the figures. Unless otherwise specified, spatially relative terms are intended to encompass different orientations of the material in addition to the orientation depicted in the figures. For example, if the material in the figures were inverted, an element described as being "below" or "beneath" or "bottom" of other elements or features would be oriented "above" or "on top" of the other elements or features. Thus, the term "below" may encompass both above and below orientations, depending on the context in which the term is used, as would be apparent to one of ordinary skill in the art. The material may be otherwise oriented (rotated 90 degrees, inverted, etc.) and the spatially relative descriptors used herein interpreted accordingly.

[0051] As used herein, the terms "comprising," "including," "having," and their grammatical equivalents are inclusive or open-ended terms that do not exclude additional unrecited elements or method steps, but these terms also encompass the more restrictive terms "consisting of" and "consisting essentially of," and their grammatical equivalents. Thus, structures described as "comprising," "including," and / or "having" a material may be structures that also include additional materials in some embodiments and / or structures that do not include any other materials in some embodiments. Similarly, a component (e.g., a gas) that is described as "comprising," "including," and / or "having" a species may also include other species in some embodiments and / or components that do not include any other species in some embodiments.

[0052] As used herein, the term "may" with respect to a material, structure, feature, or method act indicates that it is intended to be used in implementing an embodiment of the present disclosure, and such terminology is used in preference to a more restrictive term ("is") so as to avoid the suggestion that other compatible materials, structures, features, and methods that may be used in combination therewith should or must be excluded.

[0053] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0054] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0055] As used herein, the terms "configured" and "configuration" mean and refer to the size, shape, material composition, orientation, and arrangement of a referenced material, structure, assembly, or device so as to facilitate the referenced operation or property of the referenced material, structure, assembly, or device in a predetermined manner.

[0056] The illustrations presented herein are not intended to be actual views of any particular material, structure, substructure, region, subregion, device, system, or manufacturing stage, but are merely idealized representations used to describe embodiments of the present disclosure.

[0057] Embodiments are described herein with reference to cross-sectional views that are schematic diagrams. Therefore, variations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes or structures illustrated, but may include shape deviations due to, for example, manufacturing techniques. For example, a structure illustrated or described as a frame may have rough and / or nonlinear features. In addition, the illustrated acute angles may be rounded. Therefore, the materials, features, and structures illustrated in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shapes of the materials, features, or structures, and do not limit the scope of the claims.

[0058] The following description provides specific details, such as material types and processing conditions, in order to provide a thorough description of the disclosed apparatus (e.g., devices, systems) and method embodiments. However, one of ordinary skill in the art will understand that the apparatus and method embodiments may be practiced without using these specific details. In fact, the apparatus and method embodiments may be practiced in conjunction with conventional semiconductor fabrication techniques employed in the industry.

[0059] The fabrication processes described herein do not form a complete process flow for processing an apparatus (e.g., device, system) or its structure. The remainder of the process flow is known to a person of ordinary skill in the art. Therefore, only methods and structures necessary to understand embodiments of the present apparatus (e.g., device, system) and method are described herein.

[0060] Unless the context indicates otherwise, the materials described herein may be formed by any suitable technique, including but not limited to spin coating, blanket coating, chemical vapor deposition ("CVD"), atomic layer deposition ("ALD"), plasma enhanced ALD, physical vapor deposition ("PVD") (e.g., sputtering), or epitaxial growth. Depending on the specific material to be formed, the technique for depositing or growing the material may be selected by one of ordinary skill in the art.

[0061] Unless the context indicates otherwise, removal of material described herein may be accomplished by any suitable technique, including but not limited to etching (eg, dry etching, wet etching, vapor etching, atomic layer etching), ion milling, abrasive planarization, or other known methods.

[0062] Reference will now be made to the drawings, wherein like numerals refer to like components throughout. The drawings are not necessarily drawn to scale.

[0063] By the methods of the present disclosure, one or more surface treatments are performed in conjunction with depositing a conductive material on an elongated feature (e.g., before, during, and / or after), to inhibit or prevent attractive or cohesive forces at the surface of the conductive material that could otherwise cause opposing sidewalls to contact each other, causing the elongated structure to bend (e.g., "line bend"), and form pinch points that would hinder subsequent fabrication processes that would electrically isolate adjacent areas of the conductive material. Thus, embodiments of the present disclosure can utilize conductive materials that would otherwise be unusable with conventional methods due to their tendency to cause line bends and pinch points that would render the resulting microelectronic devices and systems inoperable. These now available conductive materials include conductive materials that exhibit low resistivity. Thus, current microelectronic device structures include conductive substructures (e.g., control gates) that can exhibit lower resistivity and, therefore, improved electrical performance, compared to the resistivity and electrical performance of conventional microelectronic device structures.

[0064] Figure 2 A substrate 202 (eg, a base structure) is illustrated that has been patterned to include vertically extending elongated features 204 (eg, parallel to an indicated "Z" axis). Although Figure 2 Only two such elongated features 204 are illustrated, but the substrate 202 may support any number of elongated features 204 , each of which may be parallel to one or more adjacent elongated features 204 .

[0065] The substrate 202 may include or consist of any of the base materials or constructions described above. For example, the substrate 202 may include a semiconductor material (eg, silicon, such as polysilicon).

[0066] The elongated features 204 may be formed by patterning (e.g., etching) the substrate 202. Thus, in some embodiments, the elongated features 204 may include the same material as the substrate 202. In some such embodiments, the elongated features 204 may be free of linings or other additional materials on the sidewalls and / or other surfaces of the elongated features 204. In other embodiments, the elongated features 204 may include one or more additional materials. For example, Figure 2 As illustrated in the enlarged dashed box of , the elongated features 204 may include a semiconductor 206 on which a gate oxide 208 is formed, and optionally a liner 210 (e.g., a TiN liner). In other embodiments, the elongated features 204 and / or the substrate 202 may include a hard mask material on one or more surfaces thereof.

[0067] Openings 212 (e.g., trenches) separate adjacent elongated features 204. Each of the openings 212 and elongated features 204 may have a high aspect ratio. As used herein, "high aspect ratio" means and includes a height to width ratio of at least about 5:1. Thus, the height H may be at least five times the feature width W(F) and at least five times the trench width W(T).

[0068] like Figure 3 As illustrated in FIG. 1 , the coating structure 300 is formed by depositing (e.g., by ALD, by CVD, such as plasma enhanced CVD) a conductive material 302 on the elongated features 204 in one or more deposition actions. The conductive material 302 may be conformally formed on the elongated features 204. Figure 2 on all surfaces of the structure, including on the vertical sidewalls of the elongated features 204 and on Figure 2 The upper surface of the substrate 202 is exposed in the opening 212 .

[0069] The conductive material 302 may include one or more metals, metal oxides, metal nitrides, or combinations thereof, such as one or more of ruthenium (Ru), molybdenum (Mo), tungsten (W), silver (Ag), copper (Cu), palladium (P), platinum (Pt), rhodium (Rh), oxides of any of the above, nitrides of any of the above, or combinations of any of the above. The conductive material 302 may be formulated or selected to exhibit a relatively low resistivity, for example, less than about 1×10 -6 m·Ω.

[0070] Due to the surface treatment method discussed further below, the conductive material 302 is deposited on the elongated feature 204 in a manner that reduces or counteracts the strength of the attractive or cohesive forces that would otherwise exist at the opposing sidewalls 304 of the conductive material 302. Thus, the reduced or counteracted surface forces may not cause the opposing sidewalls 304 to move toward each other and bend the underlying elongated feature 204 and cause the pinch point 112 (see Figure 1C and Figure 1D ).

[0071] refer to Figure 4 , filling structure 400, in some embodiments, can be formed by depositing (through one or more additional deposition actions) additional conductive material 402 (including or consisting of any of the materials mentioned above for conductive material 302) on conductive material 302 to fill the volume between adjacent elongated features 204. In embodiments where conductive material 302 is formed in conjunction with a surface treatment, filling by additional conductive material 402 can be more reliably implemented compared to methods without surface treatment. That is, without surface treatment, line bends and pinch points can be formed with opposing sidewalls 304 contacting each other, which can also leave gaps below pinch points 112 (e.g., at the edges of the lines). Figure 1C and Figure 1D ). The pinch point 112 may prevent the additional conductive material 402 from completely filling the volume between adjacent elongated features 204. Therefore, forming the conductive material 302 in conjunction with the surface treatment of the embodiments of the present disclosure not only inhibits line bending and pinch point formation, but may also improve the reliability of forming a filled structure, such as a filled structure 400 filled with conductive materials (e.g., conductive material 302 and additional conductive material 402) that completely fills the volume between the elongated features 204.

[0072] In some embodiments, the additional conductive material 402 may be formed in conjunction with one or more surface treatments. Thus, both the conductive material 302 and the additional conductive material 402 may be formed (e.g., deposited) in conjunction with the surface treatments. Alternatively, only one of the conductive material 302 and the additional conductive material 402 may be formed (e.g., deposited) in conjunction with the surface treatments.

[0073] The surface treatment of the disclosed method includes introducing (e.g., into a deposition chamber) a surface treatment gas to a surface of a structure, such as an elongated feature 204 (e.g., Figure 2 The surface treatment gas is formulated to provide treatment species (e.g., atoms, molecules, and / or chemical groups) to the surface exposed to the gas. Thus, the surface treatment gas includes and is formulated to provide treatment species (e.g., atoms, molecules, chemical groups, reducing the surface energy of the conductive material 302 (e.g., the formed conductive material, the simultaneously formed conductive material, or the subsequently formed conductive material). The surface treatment gas may include and / or provide (e.g., as treatment species) a metal halide, a metal hydride, an organometallic compound, a Lewis acid, a halogen, hydrogen, or a combination of any of the foregoing. In some embodiments, the surface treatment gas may additionally or alternatively include polar molecules that are formulated to provide charge species that modify the surface charge to the opposite native polarity (e.g., of the surface of the deposited conductive material).

[0074] It is contemplated that the presence of the treatment species on the surface reduces (e.g., diminishes) or cancels attractive or cohesive forces along or on the surface. For example, prior to the introduction of the surface treatment gas, the exterior surface of the structure may exhibit attractive or cohesive forces (e.g., van der Waals forces, covalent forces, ionic forces, surface energy forces, and / or electrostatic forces) that, if unaffected, may result in line bending and pinch points, as described above. After the surface is exposed to the surface treatment gas, the introduction of the treatment species from the surface treatment gas onto or into the surface may reduce or counteract the strength of the attractive or cohesive forces so that adjacent surfaces (e.g., opposing sidewalls) treated will not bend toward each other (e.g., resulting in line bending and / or pinch points). Additionally or alternatively, subsequent or simultaneous material formation (e.g., growth or deposition of conductive material 302) may be at least partially influenced by a surface treatment that has been or is being subjected to such that attractive or cohesive forces that may otherwise have formed are avoided or reduced such that subsequently formed or simultaneously formed material (e.g., conductive material 302) will not bend toward adjacent portions of the material (e.g., causing line bends and / or pinch points).

[0075] In some embodiments, the surface treatment gas may include one or more of the following: SiH 4 (e.g., source of silicon (Si) processing species); C 8 H 24 N 4 Ti("TDMAT") (e.g., a source of carbon (C), hydrogen (H), nitrogen (N), and / or titanium (Ti) treating species); TiCl 4 (e.g., source of chlorine (Cl) treated species); BCl 3(e.g., a source of chlorine (Cl) treating species); carbon monoxide (CO) (a source of carbon (C) and / or oxygen (O) treating species); hydrogen (H 2 ) (source of hydrogen (H) treated species); or a mixture or combination of any of the foregoing (e.g., TiCl 4 SiH within 4 The surface treatment gas may optionally include one or more inert carrier gases (eg, xenon (Xe) gas, fluorine (F), krypton (Kr) gas, argon (Ar) gas, or a mixture of any of them).

[0076] The surface treatment may be performed on the patterned structure of the elongated features 204 (e.g. Figure 2 The surface treatment gas may be introduced at at least one stage between the formation (or provision) of the structure of the conductive material 302 and the completion of the formation of the conductive material 302 or shortly thereafter (eg, before additional materials are formed over the conductive material 302).

[0077] In some embodiments, for example Figure 5 In some embodiments, the surface treatment may be performed during the formation of the conductive material 302 (e.g., between portions of the conductive material 302 being deposited). For example, the structure 500 is formed as Figure 3 The coating structure 300 of the embodiment of the present invention may include forming (e.g., depositing) a first portion 502 of the conductive material 302 on the elongated feature 204, performing one or more surface treatments as described above, and then forming (e.g., depositing) a second portion 504 of the conductive material 302 on the first portion 502. The conductive material 302 of the first portion 502 and the second portion 504 may be the same or different conductive materials, each selected from the conductive materials described above. The first portion 502 and the second portion 504 of the conductive material 302 may each individually substantially conform to the topography of the structure and / or material directly below it.

[0078] In this or other embodiments of the present disclosure, the conductive material (e.g., conductive material 302) may be formed in one or more portions (e.g., first portion 502, second portion 504) by one or more deposition actions performed using the same or different deposition chambers. In addition, the surface treatment may be performed in the same deposition chamber (e.g., a deposition chamber configured for CVD and / or for ALD) used to form the conductive material, or may alternatively be performed in other equipment. For example, referring to Figure 5, the first portion 502 may be formed in a deposition chamber, one or more surface treatments may be performed in the deposition chamber (e.g., with or without stopping the vacuum conditions in the deposition chamber), and then the second portion 504 may be formed in the same deposition chamber (e.g., with or without stopping the vacuum conditions in the deposition chamber). In other embodiments, the first portion 502 may be formed in a deposition chamber, one or more surface treatments may be performed after the structure is removed from the deposition chamber, and then the second portion 504 may be formed with the rear of the structure in the deposition chamber or in another deposition chamber. In these or other embodiments, the formation of the conductive material (e.g., the first portion 502 and the second portion 504) and the one or more surface treatments may be performed while the substrate 202 is supported by the frame, and without removing the substrate 202 from the frame.

[0079] The surface treatment is performed after forming the first portion 502 of the conductive material 302 such that the outer surface of the first portion 502 (including the first opposing sidewall 506) is exposed to a surface treatment gas. The surface treatment gas may leave a treatment species 508 (e.g., one or more of the treatment species described above, depending on the composition of the surface treatment gas) on or in the exposure, including on or in the first opposing sidewall 506. The treatment species 508 may be formed (e.g., deposited, adhered) on or in the exposed surface in an amount occupying about .1% to about 100% of the surface area of ​​the exposed surface, at least initially. In some embodiments, the surface treatment gas may form a monolayer (e.g., a fully saturated monolayer) of the treatment species on the exposed surface. Such a monolayer may substantially cover the exposed surface. In some such embodiments, after the formation of the conductive material 302 (or conductive material) is completed, the amount of the treatment species relative to the total volume of the conductive material 302 may constitute a trace amount. In these or other embodiments, the treatment species (after formation of the conductive material 302 and any surface treatments are complete) may be present in trace amounts or greater amounts on or in the conductive material 302 (eg, on or in the surface of the conductive material 302).

[0080] The surface treatment reduces or counteracts what would otherwise be attractive or cohesive forces on the first opposing sidewalls 506 of the first portion 502 of the conductive material 302. As a result, the conductive material 302 of the first portion 502 may not incur line bends or pinch points, thereby allowing the second portion 504 of the conductive material 302 to be reliably conformally formed on the first portion 502, even within the depth of a narrow trench between the first opposing sidewalls 506. In some embodiments, the treatment species 508 may remain along the interface between the first portion 502 and the second portion 504 of the conductive material 302.

[0081] The presence of the treatment species 508 along one surface (e.g., the inner surface) of the second portion 504 of the conductive material 302 may also effectively reduce or counteract attractive or cohesive forces that may otherwise exist on the outer surface (e.g., the second opposing sidewall 512) of the second portion 504 of the conductive material 302. Thus, even after formation (e.g., deposition) of the second portion 504, regions of the conductive material 302 on the second opposing sidewall 512 may not be pulled toward each other, and line bends and pinch points may be avoided.

[0082] In some embodiments, the remaining open volume between the second opposing sidewalls 512 is still filled with another portion of the conductive material 302. Figure 6 , the filling structure 600 may be formed by forming (e.g., depositing) a third (or more) portion 602 of the conductive material 302 on the second portion 504 in one or more forming actions to fill the volume that is the open volume in the trench between the second opposing sidewalls 512. The third (or more) portion 602 of the conductive material 302 may include any of the conductive materials mentioned above, and may be the same as or different from any one or both of the first portion 502 and the second portion 504 of the conductive material 302.

[0083] Prior to forming the third (or more) portions 602 of the conductive material 302, one or more additional surface treatments may be performed by exposing the second portion 504 of the conductive material 302 to one or more surface treatment gases, which may be the same or different than the surface treatment gases to which the first portion 502 was exposed. The additional surface treatments introduce additional treatment species 604 (e.g., trace amounts or greater) onto or into the second portion 504. As before, the additional treatment species 604 may include one or more of the treatment species mentioned above, the composition of which depends on the selected surface treatment gas. In the fill structure 600, the treatment species 508 may be disposed along the interface between the first portion 502 and the second portion 504 of the conductive material 302, while the additional treatment species 604 may be disposed along the interface between the second portion 504 and the third (or more) portions 602. The presence of the additional treatment species 604 may facilitate reliable formation (e.g., deposition) of the third (or more) portions 602 because line bends and pinch points may be avoided.

[0084] In some embodiments, the surface treatment may be performed after (eg, only after, or also after) the formation (eg, deposition) of the conductive material 302 is completed. Figure 7A structure 700 having a conductive material 302 is illustrated as being formed on an elongated feature 204. The conductive material 302 may have been formed in one or more deposition actions to form a portion 702 of the conductive material 302. Then, in one or more exposure or introduction actions, one or more surface treatment gases may be introduced to introduce treatment species 508 on the exterior surface 510 of the conductive material 302, including on the opposing sidewalls 304 of the conductive material 302. The presence of the treatment species 508 from the surface treatment may inhibit subsequent attraction of the opposing sidewalls 304 toward each other to avoid line bends and pinch points. As a result, the opposing sidewalls 304 may remain substantially vertical and substantially uniformly spaced apart along their height. Subsequently, the structure 700 may be subjected to additional material formation or material removal actions, even reliably into the depth of the trench between the opposing sidewalls 304.

[0085] In some embodiments, the surface treatment is performed before (e.g., just before or also before) the conductive material 302 begins to be formed (e.g., deposited). Figure 8 The structure 800 having the conductive material 302 formed on the elongated feature 204 is illustrated, and the conductive material 302 may have been formed in one or more deposition actions to form the portion 702. Prior to forming the conductive material 302, one or more surface treatment gases may be introduced to the exposed surfaces of the elongated feature 204 and the substrate 202. This exposure may leave treatment species 508 on the outer surfaces of the elongated feature 204 and the substrate 202. Thus, the elongated feature 204 includes a liner 210 ( Figure 2 ), the treatment species 508 may be present on or in the liner 210. In embodiments where the elongated features 204 do not include a liner on an exterior surface, the treatment species 508 may be present on or in the exterior surface of the material of the elongated features 204 (e.g., which may be the same material as the substrate 202).

[0086] After surface treatment, the conductive material 302 may then be formed (e.g., deposited) on the treatment species 508 and the elongated features 204 and substrate 202. The presence of the treatment species 508 along the interface between the conductive material 302 and any of the elongated features 204 and substrate 202 may effectively reduce or counteract the attractive or cohesive forces that would otherwise be exhibited on the outer surface 510 of the conductive material 302. As a result, the conductive materials 302 may not be strongly attracted to each other along the opposing sidewalls 304, and line bends and pinch points may be avoided. As before, the structure 800 may then be subjected to additional material formation or material removal actions, even reliably into the depth of the trench between the opposing sidewalls 304.

[0087] It should be appreciated that any of the above-mentioned methods for forming a structure having a coating of conductive material on the elongated feature 204 (e.g., as in Figure 3 , Figure 5 , Figure 7 and / or Figure 8 ) may be followed by one or more additional conductive material formations (eg, deposition actions) to form structures filled with conductive material between the elongated features 204 (eg, as in Figure 4 and / or Figure 6 Furthermore, one or more surface treatments may be performed before or after any of the conductive material forming actions.

[0088] In some embodiments, one or more surface treatments may be performed (e.g., one or more surface treatment gases may be introduced) even during one or more conductive material forming actions. For example, in any of the methods mentioned above or described later, when forming (e.g., depositing) the conductive material 302, the surface treatment gas may be introduced and exposed to the surface on which the conductive material 302 is formed and also to the conductive material when the conductive material 302 is deposited. However, such surface treatment during deposition may introduce treatment species (e.g., one or more treatment species described above) to reduce or offset the strength of what would otherwise be attractive or cohesive forces on the outer surface of the conductive material 302 (once formed) and prevent line bends and pinch points. The treatment species (e.g., treatment species 508, additional treatment species 604) may be detected on the outer surface of the conductive material 302 in trace amounts or greater. In some embodiments, the treatment species may also be present in the volume of the conductive material 302 (e.g., dispersed therein) in trace amounts or greater.

[0089] In other embodiments, no treatment species from the surface treatment gas may be detected after the formation of the conductive material 302. However, exposure of the conductive material 302 or the elongated features 204 to the surface treatment gas may have reduced or counteracted attractive or cohesive forces on opposing sidewalls of the conductive material 302 that would otherwise exist during or after deposition of the conductive material 302.

[0090] Thus, a method of forming a structure is disclosed. The method includes forming a pattern of elongated features extending perpendicularly from a base structure. A conductive material is formed on the elongated features. After completing forming the pattern of elongated features, the elongated features, the conductive material, or both are exposed to at least one surface treatment gas. The at least one surface treatment gas includes at least one species, the at least one species being formulated to reduce attraction or cohesion at a surface of the conductive material.

[0091] After forming the conductive material 302, selected portions of the conductive material 302 may be removed to form desired conductive regions. For example, portions of the conductive material 302, such as from above the elongated features 204 and from above the substrate 202 between opposing sidewalls 304, may be selectively removed to electrically isolate adjacent conductive regions formed by the conductive material 302. More specifically, in Figure 3 The coated structure 300, Figure 5 Structure 500, Figure 7 Structure 700 or Figure 8 In the case of any of the structures 800 (or even in some embodiments, in the case of Figure 4 Filling structure 400 or Figure 6 In the case of a filling structure 600), a portion of the conductive material 302 may be removed (eg Fig. 9 ) to form a structure 900 having a conductive structure 902 along vertical sidewalls of elongated features 204, and wherein a floor 904 of each of trenches 906 exposes a surface of substrate 202, and wherein an upper surface of elongated features 204 is exposed and coplanar with an upper surface of conductive structure 902. Structures such as structure 900 may be configured for inclusion in a final microelectronic device structure, wherein conductive structure 902 provides a vertical control gate for, for example, a memory device.

[0092] In other embodiments, for example, Fig.10 As described in , the material removal actions following the formation and surface treatment actions of the conductive material 302 include forming a structure 1000 in which the conductive structure 1002 occupies the bottom of the volume between adjacent elongated features 204. For example, in Figure 4 Filling structure 400 or Figure 6 In the case of any one of the filling structures 600 (or in the case of the filling Figure 3 Coating structure 300, Figure 5 Structure 500, Figure 7 Structure 700 or Figure 8 After determining the remaining trench volume between the elongated features 204 of the structure 800, the upper portion of the conductive material 302 may be removed to form recesses 1004 between the elongated features 204. Each of the conductive structures 1002 is physically and electrically isolated from its neighboring conductive structures. Fig.10 The structure 1000 may be configured for inclusion in a final microelectronic device structure, where the conductive structure 1002 provides a recessed control gate for, for example, a memory device.

[0093] The microelectronic device structure formed by any one or more of the methods described herein may include treatment species 508 (and in some embodiments, additional treatment species 604) derived from one or more of the surface treatment gases used during the method. Fig.11A , the treatment species 508 may be present along the interface 1102 between the elongated feature 204 and the conductive material 302, such as in embodiments that include one or more surface treatments prior to forming the first portion of the conductive material 302 (e.g., as described above with respect to Figure 8 ). Fig. 11B , the treatment species 508 may be present along the interface 1104 between portions of the conductive material 302 (e.g., between the first portion 502 and the second portion 504 of the conductive material 302), such as in embodiments that include one or more surface treatments between two depositions of portions of the conductive material 302 (e.g., as described above with respect to Figure 5 and Figure 6 ). Fig. 11C , the treatment species 508 may be present along the outer surface 510 of the conductive material 302, such as in embodiments that include one or more surface treatments after the conductive material 302 is deposited (e.g., as described above with respect to Figure 7 ). Fig.11D , the treatment species from the surface treatment gas may be disposed along multiple interfaces within the conductive material 302, for example, where the treatment species 508 is disposed along an interface 1104 between the first portion 502 and the second portion 504 of the conductive material 302, and where the additional treatment species 604 is disposed along another interface 1106 between the second portion 504 and the third (or more) portions 602 of the conductive material 302, for example in embodiments that include one or more surface treatments performed between each of multiple depositions of portions of the conductive material 302 (e.g., as described above with respect to Figure 6 ). Fig.11E , the treatment species 508 can be dispersed within the volume of the conductive material 302, whether formed in one portion or multiple portions, or by one deposition action or multiple deposition actions, such as in embodiments where the surface treatment gas is introduced simultaneously with the formation (e.g., deposition) of the conductive material 302.

[0094] In some embodiments, the treatment species 508 (and in some embodiments, the additional treatment species 604) remain at the surface where the treatment species is first formed by exposing the surface to at least one surface treatment gas. However, in other embodiments, the treatment species 508 (and in some embodiments, the additional treatment species 604) is caused to migrate (or "float") outward (e.g., closer to the outer surface of the conductive material) during subsequent formation of the additional conductive material 302 on the treated surface of the conductive material 302. Thus, while the treatment species 508 may be disposed at the outer surface 510 ( Figure 7 ), but the treatment species 508 may be formed before the conductive material 302 is formed (e.g., as in Figure 8 ) or between portions forming the conductive material 302 (e.g., as in Figure 5 has been introduced.

[0095] Any of the above-mentioned conductive material forming (e.g., deposition) actions and / or surface treatment actions may be preceded or followed by one or more thermal treatments (e.g., annealing). For example, annealing may be performed after treating at least one surface of the conductive material and before forming another portion of the conductive material thereon. Such an annealing body may "set" the at least one surface, for example, to promote the species (e.g., treatment species 508) from the surface treatment gas to take hold on or in the at least one surface. As another example, annealing may be performed before exposing the surface to at least one surface treatment gas to prepare the surface to accept the species (e.g., treatment species 508) from the surface treatment gas.

[0096] Any of the above methods can be used in combination with other methods. Fig. 9 The structure 900 may include along Fig.11A The interface 1102 of the processing species 508, along Fig. 11B The interface 1104 of the processing species 508, along Fig. 11C The treated species 508 of the outer surface 510 is Fig.11D The additional processing species 604 of another interface 1106 and / or distributed in Fig.11E The treated species 508 within the volume of the conductive material 302 (however, in the embodiment, it also includes Fig.11D In the case of the volume described in Fig.11E Such a volume as described in may be located at Fig. 9 The conductive material 302 is other than the area indicated by the frame D). Fig.10 The structure 1000 is similar.

[0097] Thus, a device is disclosed that includes an elongated feature extending perpendicularly from a base structure. A conductive material is disposed on the elongated feature. The conductive material has a thickness of less than about 1×10-6 The at least one species is in or on the conductive material proximate to opposite sidewalls of the conductive material between adjacent ones of the elongated features. The at least one species includes one or more of silicon, titanium, chlorine, carbon, hydrogen, nitrogen, and oxygen.

[0098] However, the formation Fig. 9 Structure 900 or Fig.10 The method of forming structure 1000 includes at least one surface treatment in conjunction with forming (e.g., depositing) one or more conductive materials by one or more forming (e.g., deposition) actions (e.g., before, after, and / or during (e.g., simultaneously with, alternating with, intermittently). Moreover, the surface treatment reduces or counteracts attractive surface or cohesive forces that may otherwise cause opposing sidewalls of the conductive material to attract each other and cause line bending and pinching points. By avoiding line bending and pinching points, subsequent material formation and / or material removal (e.g., etching) actions may be more reliably performed, including material removal actions to electrically isolate adjacent conductive structures formed of the conductive material. Thus, microelectronic structures may be reliably formed even using conductive materials that (with conventional methods) would otherwise be susceptible to causing line bending and pinching points.

[0099] Thus, a method of forming a microelectronic device is disclosed. The method includes forming an elongated feature extending from a base structure, and depositing a conductive material on opposite sidewalls of the elongated feature. At least one surface treatment gas is introduced into a deposition chamber to expose the elongated feature, the conductive material, or both to the at least one surface treatment gas. The at least one surface treatment gas includes a species that is formulated to mitigate one or more of attractive forces and cohesive forces between opposing surfaces of the conductive material. After introducing the at least one surface treatment gas, a portion of the conductive material is removed from between the opposite sidewalls of the elongated feature.

[0100] According to an embodiment of the present disclosure, comprising Figures 9 to 11E Any of the structures in, or any of the arrays thereof, a microelectronic device (e.g., a semiconductor device, a memory device (e.g., a DRAM device) may be used in embodiments of the electronic system of the present disclosure. For example, Fig.12 1 is a block diagram of an illustrative electronic system 1200 according to an embodiment of the present disclosure. The electronic system 1200 may include, for example, a computer or computer hardware component, a server or other network hardware component, a cellular phone, a digital camera, a personal digital assistant (PDA), a portable media (e.g., music) player, etc. The electronic system 1200 includes at least one memory device 1204. The electronic system 1200 may further include at least one electronic signal processor device 1202 (which may otherwise be referred to in the art as a "microprocessor"). At least one of the electronic signal processor device 1202 and the at least one memory device 1204 may include, for example, Figures 9 to 11E The at least one memory device 1204 and the at least one electronic signal processor device 1202 may be combined on a "system on a chip (SoC)". Thus, at least one of the electronic signal processor device 1202 and the at least one memory device 1204 may be formed by a method that includes performing at least one surface treatment in conjunction with (e.g., before, during, and / or after) depositing a conductive material on the elongated features.

[0101] The electronic system 1200 may further include one or more input devices 1206 for inputting information into the electronic system 1200 by a user, such as a pointing device (e.g., a mouse), a keyboard, a touch pad, a button, a control panel, or a combination thereof. The electronic system 1200 may further include one or more output devices 1208 for outputting information (e.g., visual output, audio output) to the user, such as a monitor, a display, a printer, an audio output jack, a speaker, etc. In some embodiments, the input device 1206 and the output device 1208 may include a device configured for both input and output (e.g., a touch screen device), which may be used both to input information into the electronic system 1200 and to output visual information to the user. The one or more input devices 1206 and the output device 1208 may be in electrical communication with at least one of the memory device 1204 and the electronic signal processor device 1202.

[0102] Non-limiting example embodiments may include the following, alone or in combination:

[0103] Embodiment 1: A method of forming a structure, the method comprising: forming a pattern of elongated features extending vertically from a base structure; forming a conductive material on the elongated features; and after completing the formation of the pattern of elongated features, exposing the elongated features, the conductive material, or both to at least one surface treatment gas, the at least one surface treatment gas comprising at least one species formulated to reduce attraction or cohesion at the surface of the conductive material.

[0104] Embodiment 2: A method according to embodiment 1, wherein exposing the slender feature, the conductive material, or both to the at least one surface treatment gas includes exposing the portion of the conductive material to the at least one surface treatment gas after forming the portion of the conductive material on the slender feature.

[0105] Embodiment 3: The method of Embodiment 2, further comprising, after exposing the portion of the conductive material to the at least one surface treating gas, forming at least one additional portion of the conductive material on the portion of the conductive material.

[0106] Embodiment 4: The method of Embodiment 3, further comprising exposing the at least one additional portion of the conductive material to the at least one surface treatment gas.

[0107] Embodiment 5: The method of Embodiment 4, further comprising forming further conductive material on the at least one additional portion of the conductive material to fill a volume between adjacent elongated features of the pattern of elongated features.

[0108] Embodiment 6: The method of Embodiment 2, wherein exposing the portion of the conductive material to the at least one surface treatment gas is after forming the conductive material on the elongated feature is completed.

[0109] Embodiment 7: A method according to any one of embodiments 1 to 6, wherein exposing the elongated features, the conductive material, or both to the at least one surface treatment gas includes exposing the elongated features to the at least one surface treatment gas before forming the conductive material on the elongated features.

[0110] Embodiment 8: The method of any one of Embodiments 1 to 7, wherein exposing the elongated features, the conductive material, or both to the at least one surface treatment gas comprises forming the conductive material on the elongated features while introducing the at least one surface treatment gas.

[0111] Embodiment 9: The method of any one of embodiments 1 to 8 further comprises, after forming the conductive material on the elongated features, removing at least a portion of the conductive material to form electrically isolated conductive structures between adjacent elongated features of the pattern of elongated features.

[0112] Embodiment 10: The method according to any one of embodiments 1 to 9, further comprising selecting the at least one surface treatment gas to include SiH 4 , C 8 H 24 N 4 Ti、TiCl 4 , BCl 3 , CO and H 2 One or more of .

[0113] Embodiment 11: The method of any one of Embodiments 1-10, further comprising selecting the conductive material to include one or more of Ru, Mo, W, Ag, and Cu.

[0114] Embodiment 12: A device comprising: an elongated feature extending vertically from a base structure; a conductive material on the elongated feature, the conductive material having a-6 and at least one species in or on the conductive material proximate to opposite sidewalls of the conductive material between adjacent ones of the elongated features, the at least one species comprising one or more of silicon, titanium, chlorine, carbon, hydrogen, nitrogen, and oxygen.

[0115] Embodiment 13: The apparatus of Embodiment 12, wherein the elongated features solely comprise a gate oxide and a liner.

[0116] Embodiment 14: The apparatus of any of Embodiments 12 or 13, wherein the at least one species comprises at least one of silicon, titanium, and chlorine.

[0117] Embodiment 15: The apparatus of any one of Embodiments 12 to 14, wherein the at least one species is disposed along an interface between the conductive material and the elongated feature.

[0118] Embodiment 16: The apparatus of any one of Embodiments 12 to 15, wherein the at least one species is disposed along an interface between portions of the conductive material.

[0119] Embodiment 17: The apparatus of any one of Embodiments 12 to 16, wherein the at least one species is disposed along an exterior surface of the conductive material.

[0120] Embodiment 18: The apparatus of any one of Embodiments 12 to 17, wherein the at least one species is dispersed throughout a portion of the conductive material.

[0121] Embodiment 19: The apparatus of any one of Embodiments 12 to 18, wherein the conductive material comprises Ru.

[0122] Embodiment 20: A method for forming a microelectronic device, the method comprising: forming an elongated feature extending from a base structure; depositing a conductive material on opposite side walls of the elongated feature; introducing at least one surface treatment gas into a deposition chamber to expose the elongated feature, the conductive material, or both to the at least one surface treatment gas, the at least one surface treatment gas comprising at least one species, the at least one species being formulated to reduce one or more of attractive and cohesive forces between opposite surfaces of the conductive material; and after introducing the at least one surface treatment gas, removing a portion of the conductive material from between the opposite side walls of the elongated feature.

[0123] Although the disclosed devices, structures, and methods are susceptible to various modifications and alternative forms in their implementations, specific embodiments have been shown by way of example in the drawings and have been described in detail herein. However, the present disclosure is not intended to be limited to the particular forms disclosed. On the contrary, the present disclosure encompasses all modifications, combinations, equivalents, variations, and alternatives that fall within the scope of the present disclosure as defined by the following claims and their legal equivalents.

Claims

1. A method of forming a microelectronic device structure, the method comprising: forming a pattern of elongated features extending perpendicularly from a base structure; forming a conductive material on the elongated features; and After completing forming the pattern of elongated features, the elongated features, the conductive material, or both are exposed to at least one surface treatment gas comprising at least one species formulated to reduce attractive or cohesive forces at a surface of the conductive material.

2. The method of claim 1 , wherein exposing the elongated features, the conductive material, or both to the at least one surface treatment gas comprises exposing the portion of the conductive material to the at least one surface treatment gas after forming the portion of the conductive material on the elongated features. 3 . The method of claim 2 , further comprising, after exposing the portion of the conductive material to the at least one surface treating gas, forming at least one additional portion of the conductive material on the portion of the conductive material. 4 . The method of claim 3 , further comprising exposing the at least one additional portion of the conductive material to the at least one surface treatment gas. 5 . The method of claim 4 , further comprising forming further conductive material over the at least one additional portion of the conductive material to fill volumes between adjacent elongated features of the pattern of elongated features.

6. The method of claim 2, wherein exposing the portion of the conductive material to the at least one surface treatment gas is after forming the conductive material on the elongated feature is completed.

7. The method of claim 1, wherein exposing the elongated features, the conductive material, or both to the at least one surface treatment gas comprises exposing the elongated features to the at least one surface treatment gas prior to forming the conductive material on the elongated features.

8. The method of claim 1, wherein exposing the elongated features, the conductive material, or both to the at least one surface treatment gas comprises introducing the at least one surface treatment gas while forming the conductive material on the elongated features.

9. The method of any one of claims 1 to 8, further comprising, after forming the conductive material on the elongated features, removing at least a portion of the conductive material to form electrically isolated conductive structures between adjacent elongated features of the pattern of elongated features.

10. The method of any one of claims 1 to 8, further comprising selecting the at least one surface treatment gas to include SiH4, C8H 24 One or more of N4Ti, TiCl4, BCl3, CO and H2.

11. The method of any one of claims 1 to 8, further comprising selecting the conductive material to include one or more of Ru, Mo, W, Ag, and Cu.

12. A microelectronic device comprising: an elongated feature extending perpendicularly from the base structure; Conductive material having a thickness of less than 1×10 -6 Resistivity in m·Ω; and At least one species is in or on the conductive material proximate opposing sidewalls of the conductive material between adjacent ones of the elongated features, the at least one species comprising one or more of silicon, titanium, chlorine, carbon, hydrogen, nitrogen, and oxygen.

13. The microelectronic device of claim 12, wherein the elongated features solely comprise a gate oxide and a liner.

14. The microelectronic device of claim 12, wherein the at least one species comprises at least one of silicon, titanium, and chlorine.

15. The microelectronic device of any one of claims 12 to 14, wherein the at least one species is disposed along an interface between the conductive material and the elongated feature.

16. The microelectronic device of any one of claims 12 to 14, wherein the at least one species is disposed along an interface between portions of the conductive material.

17. The microelectronic device of any one of claims 12 to 14, wherein the at least one species is disposed along an exterior surface of the conductive material.

18. The microelectronic device of any one of claims 12 to 14, wherein the at least one species is dispersed throughout a portion of the conductive material.

19. The microelectronic device of any one of claims 12 to 14, wherein the conductive material comprises Ru.

20. A method of forming a microelectronic device, the method comprising: forming elongated features extending from the base structure; depositing a conductive material on opposing sidewalls of the elongated feature; introducing at least one surface treatment gas into a deposition chamber to expose the elongated features, the conductive material, or both to the at least one surface treatment gas, the at least one surface treatment gas comprising at least one species formulated to mitigate one or more of attractive and cohesive forces between opposing surfaces of the conductive material; and After introducing the at least one surface treating gas, portions of the conductive material are removed from between the opposing sidewalls of the elongated feature.

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