Stacked filter

Abstract

The present invention relates to a stacked filter. In the stacked filter (1), a first LC parallel resonance section (RP1), a second LC parallel resonance section (RP2), and an LC circuit section are formed in the base body (2). The LC circuit section is connected between the first LC parallel resonance section (RP1) and the second LC parallel resonance section (RP2) on the path between the first terminal electrode 3 and the second terminal electrode 4. In the base body (2), a conductor pattern of an inductor constituting the LC circuit section is not arranged between the conductor pattern of the first inductor (Lin1) constituting the first LC parallel resonance section (RP1) and the conductor pattern of the second inductor (Lin2) constituting the second LC parallel resonance section (RP2), and the first inductor (Lin1) of the first LC parallel resonance section (RP1) and the second inductor (Lin2) of the second LC parallel resonance section (RP2) are magnetically coupled.

Description

Technical Field

[0001] The present invention relates to a stacked filter. Background Art

[0002] As an existing stacked filter, for example, a stacked filter described in Patent Document 1 (Japanese Unexamined Patent Application Publication No. 2017-79362) is known. The stacked filter described in Patent Document 1 includes a main body and an input terminal electrode and an output terminal electrode disposed on the mounting surface of the main body. In the stacked filter of Patent Document 1, two LC parallel resonance portions are formed in the main body, and an LC series resonance portion connected between the two LC parallel resonance portions is formed. Summary of the Invention

[0003] An object of one aspect of the present invention is to provide a stacked filter capable of improving attenuation characteristics.

[0004] The stacked filter according to one aspect of the present invention includes: a main body formed by stacking a plurality of insulator layers; and a first terminal and a second terminal disposed on the outer surface of the main body. In the main body, a first LC parallel resonance portion formed by connecting a first inductor and a first capacitor in parallel, a second LC parallel resonance portion formed by connecting a second inductor and a second capacitor in parallel, and an LC circuit portion including an inductor and a capacitor are formed. The LC circuit portion is connected between the first LC parallel resonance portion and the second LC parallel resonance portion on the path between the first terminal and the second terminal. In the main body, a conductor pattern of an inductor constituting the LC circuit portion is not disposed between a conductor pattern of a first inductor constituting the first LC parallel resonance portion and a conductor pattern of a second inductor constituting the second LC parallel resonance portion, and the first inductor of the first LC parallel resonance portion and the second inductor of the second LC parallel resonance portion are magnetically coupled.

[0005] In the stacked filter according to one aspect of the present invention, in the main body, a conductor pattern of an inductor constituting the LC circuit portion is not disposed between a conductor pattern of a first inductor constituting the first LC parallel resonance portion and a conductor pattern of a second inductor constituting the second LC parallel resonance portion. Thus, in the stacked filter, since an inductor of the LC circuit portion is not disposed between the first LC parallel resonance portion and the second LC parallel resonance portion, the distance between the first LC parallel resonance portion and the second LC parallel resonance portion can be shortened. As a result, in the stacked filter, the magnetic coupling between the first inductor and the second inductor can be enhanced. Therefore, in the stacked filter, the distance between the attenuation peak (attenuation pole) of the first LC parallel resonance portion and the attenuation peak of the second LC parallel resonance portion can be separated. Therefore, in the stacked filter, the attenuation can be made steep. As a result, in the stacked filter, improvement of attenuation characteristics can be achieved.

[0006] In one embodiment, the LC circuit section may also be configured to include a first LC series resonance section and a second LC series resonance section. Among them, the first LC series resonance section is formed by connecting a third inductor and a third capacitor in series, and the second LC series resonance section is formed by connecting a fourth inductor and a fourth capacitor in series. In the element body, the first LC series resonance section and the second LC series resonance section are arranged at positions sandwiching the first LC parallel resonance section and the second LC parallel resonance section, and are separately arranged at positions closer to the outside than the first LC parallel resonance section and the second LC parallel resonance section. In this structure, compared with the magnetic coupling between the first inductor of the first LC parallel resonance section and the second inductor of the second LC parallel resonance section, the magnetic coupling between the third inductor of the first LC series resonance section and the fourth inductor of the second LC series resonance section becomes weaker. Thus, in the laminated filter, a filter with a deeper attenuation in a narrow frequency band can be realized. Therefore, in the laminated filter, an improvement in attenuation characteristics can be achieved.

[0007] In one embodiment, the first inductor, the second inductor, the third inductor, and the fourth inductor may also be respectively constituted by a conductor pattern and a via conductor.

[0008] In one embodiment, a multiplexer having a band-pass filter may also be provided. The band-pass filter is configured to include a first LC parallel resonance section, a second LC parallel resonance section, and an LC circuit section. In this structure, the laminated filter can function as a multiplexer.

[0009] According to one aspect of the present invention, an improvement in attenuation characteristics can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a perspective view of a laminated filter according to an embodiment.

[0011] Figure 2 is an exploded perspective view of the laminated filter.

[0012] Figure 3 is an equivalent circuit diagram of the laminated filter.

[0013] Figure 4 is a diagram showing the internal structure of the laminated filter.

[0014] Figure 5 is a diagram showing attenuation characteristics. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0015] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same or corresponding elements are denoted by the same reference numerals, and repeated descriptions are omitted.

[0016] As shown in Figure 1 FIG. 1, the stacked filter 1 includes a body 2, a first terminal electrode (first terminal) 3, a second terminal electrode (second terminal) 4, a first ground electrode 5, a second ground electrode 6, a third ground electrode 7, and a fourth ground electrode 8. The stacked filter 1 is a band-pass filter that passes signals in a specific frequency band and attenuates signals in frequency bands other than the specific frequency band. The stacked filter 1 is mounted on an electronic device (e.g., a circuit board or an electronic substrate) such that the first terminal electrode 3 and the second terminal electrode 4 are respectively connected to signal lines and the first ground electrode 5, the second ground electrode 6, the third ground electrode 7, and the fourth ground electrode 8 are respectively grounded.

[0017] The body 2 has a rectangular parallelepiped shape. As its outer surfaces, the body 2 has a rectangular first main surface 2a and a second main surface 2b that face each other, a first side surface 2c and a second side surface 2d that face each other, and a first end surface (side surface) 2e and a second end surface (side surface) 2f that face each other. The second main surface 2b of the body 2 constitutes a mounting surface facing the electronic device.

[0018] The relative direction between the first end surface 2e and the second end surface 2f, i.e., the long side direction of the body 2, is the first direction D1. The relative direction between the first side surface 2c and the second side surface 2d, i.e., the width direction of the body 2, is the second direction D2. The relative direction between the first main surface 2a and the second main surface 2b is the third direction D3. The rectangular parallelepiped shape includes the shape of a rectangular parallelepiped with chamfered corners and ridge lines, and the shape of a rectangular parallelepiped with rounded corners and ridge lines. The body 2 has a length L of about 1.6 mm, a width W of about 0.8 mm, and a height T of about 0.7 mm, for example.

[0019] As shown in Figure 2 FIG. 2, the body 2 is made of a dielectric ceramic (such as BaTiO3-based ceramic or glass ceramic). The body 2 is formed by stacking a plurality of dielectric layers (insulator layers) 9a to 9s. Each of the dielectric layers 9a to 9s is formed of a sintered body of a ceramic green sheet containing a dielectric material (such as BaTiO3-based material, Ba(Ti,Zr)O3-based material, (Ba,Ca)TiO3-based material, glass material, or alumina material). Among the dielectric layers 9a to 9s, the dielectric layers 9a and 9s are disposed as protective layers on the outermost surface of the body 2. In the actual body 2, the dielectric layers 9a to 9s are integrated to the extent that the boundaries between the layers cannot be recognized. The height direction of the body 2, i.e., the direction in which the first main surface 2a and the second main surface 2b face each other, is the same as the stacking direction of the plurality of dielectric layers 9a to 9s (hereinafter, simply referred to as the "stacking direction").

[0020] The first coil conductor (conductor pattern) 10, the second coil conductor 11, the third coil conductor 12, and the fourth coil conductor 13 are disposed in the dielectric layer 9b. The first coil conductor 10, the second coil conductor 11, the third coil conductor 12, and the fourth coil conductor 13 contain a conductive material (e.g., Ag or Pd, etc.). The first coil conductor 10, the second coil conductor 11, the third coil conductor 12, and the fourth coil conductor 13 are formed as sintered bodies of a conductive paste containing a conductive material (e.g., Ag powder or Pd powder, etc.). Hereinafter, the coil conductors are formed in the same manner.

[0021] The first coil conductor 10 is substantially linear (substantially in the shape of the letter "I"). The first coil conductor 10 is disposed in the dielectric layer 9b on the second end face 2f side of the base body 2. The first coil conductor 10 is disposed such that the long side direction of the first coil conductor 10 is along the second direction D2 of the base body 2. The second coil conductor 11 is substantially linear. The second coil conductor 11 is disposed on the central portion side of the dielectric layer 9b. The second coil conductor 11 is disposed such that the long side direction of the second coil conductor 11 is along the second direction D2 of the base body 2.

[0022] The third coil conductor 12 is substantially linear. The third coil conductor 12 is disposed on the central portion side of the dielectric layer 9b. The third coil conductor 12 is disposed such that the long side direction of the third coil conductor 12 is along the second direction D2 of the base body 2. The fourth coil conductor 13 is substantially linear. The fourth coil conductor 13 is disposed in the dielectric layer 9b on the first end face 2e side of the base body 2. The fourth coil conductor 13 is disposed such that the long side direction of the fourth coil conductor 13 is along the second direction D2 of the base body 2.

[0023] The fifth coil conductor 14, the sixth coil conductor 15, the seventh coil conductor 16, and the eighth coil conductor 17 are disposed in the dielectric layer 9c. The fifth coil conductor 14 has the same configuration as the first coil conductor 10. The fifth coil conductor 14 is disposed at a position overlapping the first coil conductor 10 in the stacking direction. The fifth coil conductor 14 is electrically connected to the first coil conductor 10 via the via conductor H1 and the via conductor H2.

[0024] The sixth coil conductor 15 has the same configuration as the second coil conductor 11. The sixth coil conductor 15 is disposed at a position overlapping the second coil conductor 11 in the stacking direction. The sixth coil conductor 15 is electrically connected to the second coil conductor 11 via the via conductor H3 and the via conductor H4.

[0025] The seventh coil conductor 16 has the same configuration as the third coil conductor 12. The seventh coil conductor 16 is disposed at a position overlapping the third coil conductor 12 in the stacking direction. The seventh coil conductor 16 is electrically connected to the third coil conductor 12 via the via conductor H5 and the via conductor H6.

[0026] The eighth coil conductor 17 has the same configuration as the fourth coil conductor 13. The eighth coil conductor 17 is disposed at a position overlapping the fourth coil conductor 13 in the stacking direction. The eighth coil conductor 17 is electrically connected to the fourth coil conductor 13 via through-hole conductors H7 and H8.

[0027] In the dielectric layer 9d, a ninth coil conductor 18, a tenth coil conductor 19, an eleventh coil conductor 20, and a twelfth coil conductor 21 are disposed. The ninth coil conductor 18 has the same configuration as the first coil conductor 10. The ninth coil conductor 18 is disposed at a position overlapping the fifth coil conductor 14 in the stacking direction. The ninth coil conductor 18 is electrically connected to the fifth coil conductor 14 via through-hole conductors H1 and H2.

[0028] The tenth coil conductor 19 has the same configuration as the second coil conductor 11. The tenth coil conductor 19 is disposed at a position overlapping the sixth coil conductor 15 in the stacking direction. The tenth coil conductor 19 is electrically connected to the sixth coil conductor 15 via through-hole conductors H3 and H4.

[0029] The eleventh coil conductor 20 has the same configuration as the third coil conductor 12. The eleventh coil conductor 20 is disposed at a position overlapping the seventh coil conductor 16 in the stacking direction. The eleventh coil conductor 20 is electrically connected to the seventh coil conductor 16 via through-hole conductors H5 and H6.

[0030] The twelfth coil conductor 21 has the same configuration as the fourth coil conductor 13. The twelfth coil conductor 21 is disposed at a position overlapping the eighth coil conductor 17 in the stacking direction. The twelfth coil conductor 21 is electrically connected to the eighth coil conductor 17 via through-hole conductors H7 and H8.

[0031] In the dielectric layer 9e, via conductors 22a, 22b, 22c, 22d, 22e, 22f, 22g, and 22h are disposed. The via conductor 22a is disposed at a position overlapping the through-hole conductor H1 in the stacking direction and is electrically connected to the through-hole conductor H1. The via conductor 22b is disposed at a position overlapping the through-hole conductor H2 in the stacking direction and is electrically connected to the through-hole conductor H2. The via conductor 22c is disposed at a position overlapping the through-hole conductor H3 in the stacking direction and is electrically connected to the through-hole conductor H3. The via conductor 22d is disposed at a position overlapping the through-hole conductor H4 in the stacking direction and is electrically connected to the through-hole conductor H4.

[0032] The via conductor 22e is disposed at a position overlapping with the through-hole conductor H5 in the stacking direction and is electrically connected to the through-hole conductor H5. The via conductor 22f is disposed at a position overlapping with the through-hole conductor H6 in the stacking direction and is electrically connected to the through-hole conductor H6. The via conductor 22g is disposed at a position overlapping with the through-hole conductor H7 in the stacking direction and is electrically connected to the through-hole conductor H7. The via conductor 22h is disposed at a position overlapping with the through-hole conductor H8 in the stacking direction and is electrically connected to the through-hole conductor H8.

[0033] Via conductors 23a, 23b, 23c, 23d, 23e, 23f, 23g, and 23h are disposed in the dielectric layer 9f. Via conductors 24a, 24b, 24c, 24d, 24e, 24f, 24g, and 24h are disposed in the dielectric layer 9g. Via conductors 25a, 25b, 25c, 25d, 25e, 25f, 25g, and 25h are disposed in the dielectric layer 9h. Via conductors 26a, 26b, 26c, 26d, 26e, 26f, 26g, and 26h are disposed in the dielectric layer 9i.

[0034] The via conductors 23a, 24a, 25a, and 26a are disposed at positions overlapping with the through-hole conductor H1 in the stacking direction and are electrically connected to the through-hole conductor H1. The via conductors 23b, 24b, 25b, and 26b are disposed at positions overlapping with the through-hole conductor H2 in the stacking direction and are electrically connected to the through-hole conductor H2. The via conductors 23c, 24c, 25c, and 26c are disposed at positions overlapping with the through-hole conductor H3 in the stacking direction and are electrically connected to the through-hole conductor H3. The via conductors 23d, 24d, 25d, and 26d are disposed at positions overlapping with the through-hole conductor H4 in the stacking direction and are electrically connected to the through-hole conductor H4.

[0035] The via conductors 23e, 24e, 25e, and 26e are disposed at positions overlapping with the through-hole conductor H5 in the stacking direction and are electrically connected to the through-hole conductor H5. The via conductors 23f, 24f, 25f, and 26f are disposed at positions overlapping with the through-hole conductor H6 in the stacking direction and are electrically connected to the through-hole conductor H6. The via conductors 23g, 24g, 25g, and 26g are disposed at positions overlapping with the through-hole conductor H7 in the stacking direction and are electrically connected to the through-hole conductor H7. The via conductors 23h, 24h, 25h, and 26h are disposed at positions overlapping with the through-hole conductor H8 in the stacking direction and are electrically connected to the through-hole conductor H8.

[0036] The first internal electrode 27 and via conductors 28a, 28b, 28c, 28d, 28e, 28f, 28g, and 28h are disposed in the dielectric layer 9j. The first internal electrode 27 has a rectangular shape. The first internal electrode 27 is disposed such that the long side direction of the first internal electrode 27 is along the first direction D1 of the body 2. The first internal electrode 27 contains a conductive material (e.g., Ag or Pd, etc.). The first internal electrode 27 is configured as a sintered body of a conductive paste containing a conductive material (e.g., Ag powder or Pd powder, etc.). Hereinafter, the internal electrodes are formed in the same manner.

[0037] The via conductor 28a is disposed at a position overlapping the via hole conductor H1 in the stacking direction and is electrically connected to the via hole conductor H1. The via conductor 28b is disposed at a position overlapping the via hole conductor H2 in the stacking direction and is electrically connected to the via hole conductor H2. The via conductor 28c is disposed at a position overlapping the via hole conductor H3 in the stacking direction and is electrically connected to the via hole conductor H3. The via conductor 28d is disposed at a position overlapping the via hole conductor H4 in the stacking direction and is electrically connected to the via hole conductor H4.

[0038] The via conductor 28e is disposed at a position overlapping the via hole conductor H5 in the stacking direction and is electrically connected to the via hole conductor H5. The via conductor 28f is disposed at a position overlapping the via hole conductor H6 in the stacking direction and is electrically connected to the via hole conductor H6. The via conductor 28g is disposed at a position overlapping the via hole conductor H7 in the stacking direction and is electrically connected to the via hole conductor H7. The via conductor 28h is disposed at a position overlapping the via hole conductor H8 in the stacking direction and is electrically connected to the via hole conductor H8.

[0039] Via conductors 29a, 29b, 29c, 29d, 29e, 29f, 29g, and 29h are disposed in the dielectric layer 9k. Via conductors 30a, 30b, 30c, 30d, 30e, 30f, 30g, and 30h are disposed in the dielectric layer 9l.

[0040] The via conductors 29a and 30a are disposed at positions overlapping the via hole conductor H1 in the stacking direction and are electrically connected to the via hole conductor H1. The via conductors 29b and 30b are disposed at positions overlapping the via hole conductor H2 in the stacking direction and are electrically connected to the via hole conductor H2. The via conductors 29c and 30c are disposed at positions overlapping the via hole conductor H3 in the stacking direction and are electrically connected to the via hole conductor H3. The via conductors 29d and 30d are disposed at positions overlapping the via hole conductor H4 in the stacking direction and are electrically connected to the via hole conductor H4.

[0041] The path conductors 29e and 30e are arranged at positions overlapping with the via conductor H5 in the stacking direction and are electrically connected to the via conductor H5. The path conductors 29f and 30f are arranged at positions overlapping with the via conductor H6 in the stacking direction and are electrically connected to the via conductor H6. The path conductors 29g and 30g are arranged at positions overlapping with the via conductor H7 in the stacking direction and are electrically connected to the via conductor H7. The path conductors 29h and 30h are arranged at positions overlapping with the via conductor H8 in the stacking direction and are electrically connected to the via conductor H8.

[0042] The second internal electrode 31, the third internal electrode 32, and the path conductors 33a, 33b, 33c, 33d, 33e, and 33f are arranged in the dielectric layer 9m. The second internal electrode 31 is arranged on the second end face 2f side and the second side face 2d side in the dielectric layer 9m. The second internal electrode 31 has a main body portion 31a and a lead portion 31b extending from one end of the main body portion 31a. The main body portion 31a is substantially rectangular. The lead portion 31b extends from one side of the main body portion 31a toward the second end face 2f of the element body 2. The main body portion 31a is arranged at a position overlapping with the via conductor H4 in the stacking direction and is electrically connected to the via conductor H4.

[0043] The third internal electrode 32 is arranged on the first end face 2e side and the second side face 2d side in the dielectric layer 9m. The third internal electrode 32 has a main body portion 32a and a lead portion 32b extending from one end of the main body portion 32a. The main body portion 32a is substantially rectangular. The lead portion 32b extends from one side of the main body portion 32a toward the first end face 2e of the element body 2. The main body portion 32a is arranged at a position overlapping with the via conductor H6 in the stacking direction and is electrically connected to the via conductor H6.

[0044] The path conductor 33a is arranged at a position overlapping with the via conductor H1 in the stacking direction and is electrically connected to the via conductor H1. The path conductor 33b is arranged at a position overlapping with the via conductor H2 in the stacking direction and is electrically connected to the via conductor H2. The path conductor 33c is arranged at a position overlapping with the via conductor H3 in the stacking direction and is electrically connected to the via conductor H3. The path conductor 33d is arranged at a position overlapping with the via conductor H5 in the stacking direction and is electrically connected to the via conductor H5. The path conductor 33e is arranged at a position overlapping with the via conductor H7 in the stacking direction and is electrically connected to the via conductor H7. The path conductor 33f is arranged at a position overlapping with the via conductor H8 in the stacking direction and is electrically connected to the via conductor H8.

[0045] The fourth internal electrode 34, the fifth internal electrode 35, and via conductors 36a, 36b, 36c, 36d, 36e, 36f are disposed in the dielectric layer 9n. The fourth internal electrode 34 is disposed in the dielectric layer 9n on the side of the second end face 2f. The fourth internal electrode 34 is substantially rectangular in shape. The fourth internal electrode 34 is disposed at a position overlapping the via conductor H3 in the stacking direction and is electrically connected to the via conductor H3. The fifth internal electrode 35 is disposed in the dielectric layer 9n on the side of the first end face 2e. The fifth internal electrode 35 is substantially rectangular in shape. The fifth internal electrode 35 is disposed at a position overlapping the via conductor H5 in the stacking direction and is electrically connected to the via conductor H5.

[0046] The via conductor 36a is disposed at a position overlapping the via conductor H1 in the stacking direction and is electrically connected to the via conductor H1. The via conductor 36b is disposed at a position overlapping the via conductor H2 in the stacking direction and is electrically connected to the via conductor H2. The via conductor 36c is disposed at a position overlapping the lead-out portion 31b of the second internal electrode 31 in the stacking direction and is electrically connected to the second internal electrode 31 through the via conductor H9. The via conductor 36d is disposed at a position overlapping the via conductor H7 in the stacking direction and is electrically connected to the via conductor H7. The via conductor 36e is disposed at a position overlapping the via conductor H8 in the stacking direction and is electrically connected to the via conductor H8. The via conductor 36f is disposed at a position overlapping the lead-out portion 32b of the third internal electrode 32 in the stacking direction and is electrically connected to the third internal electrode 32 through the via conductor H10.

[0047] The sixth internal electrode 37, the seventh internal electrode 38, and via conductors 39a, 39b, 39c, 39d, 39e, 39f are disposed in the dielectric layer 9o. The sixth internal electrode 37 is disposed in the dielectric layer 9o on the side of the second end face 2f. The sixth internal electrode 37 is generally L-shaped as a whole. The sixth internal electrode 37 has a first electrode portion 37a, a second electrode portion 37b extending from one end of the first electrode portion 37a, and a lead-out portion 37c extending from one end of the first electrode portion 37a. The lead-out portion 37c is disposed at a position overlapping the via conductor H2 in the stacking direction and is electrically connected to the via conductor H2.

[0048] The seventh internal electrode 38 is disposed in the dielectric layer 9o on the side of the first end face 2e. The seventh internal electrode 38 is generally L-shaped as a whole. The seventh internal electrode 38 has a first electrode portion 38a, a second electrode portion 38b extending from one end of the first electrode portion 38a, and a lead-out portion 38c extending from one end of the first electrode portion 38a. The lead-out portion 38c is disposed at a position overlapping the via conductor H8 in the stacking direction and is electrically connected to the via conductor H8.

[0049] The via conductor 39a is disposed at a position overlapping with the through-hole conductor H1 in the stacking direction and is electrically connected to the through-hole conductor H1. The via conductor 39b is disposed at a position overlapping with the through-hole conductor H9 in the stacking direction and is electrically connected to the through-hole conductor H9. The via conductor 39c is disposed at a position overlapping with the through-hole conductor H11 in the stacking direction and is electrically connected to the fourth internal electrode 34 through the through-hole conductor H11. The via conductor 39d is disposed at a position overlapping with the through-hole conductor H12 in the stacking direction and is electrically connected to the fifth internal electrode 35 through the through-hole conductor H12. The via conductor 39e is disposed at a position overlapping with the through-hole conductor H10 in the stacking direction and is electrically connected to the through-hole conductor H10. The via conductor 39f is disposed at a position overlapping with the through-hole conductor H7 in the stacking direction and is electrically connected to the through-hole conductor H7.

[0050] An eighth internal electrode 40, a ninth internal electrode 41, a tenth internal electrode 42, an eleventh internal electrode 43, and via conductors 44a, 44b, 44c, and 44d are disposed in the dielectric layer 9p. The eighth internal electrode 40 is disposed in the dielectric layer 9p on the second end face 2f side and the first side face 2c side. The eighth internal electrode 40 has a convex shape. The eighth internal electrode 40 is disposed at a position overlapping with the through-hole conductor H11 in the stacking direction and is electrically connected to the through-hole conductor H11. The ninth internal electrode 41 is disposed in the dielectric layer 9p on the first end face 2e side and the first side face 2c side. The ninth internal electrode 41 has a convex shape. The ninth internal electrode 41 is disposed at a position overlapping with the through-hole conductor H12 in the stacking direction and is electrically connected to the through-hole conductor H12.

[0051] The tenth internal electrode 42 is disposed in the dielectric layer 9p on the second side face 2d side. The tenth internal electrode 42 has a substantially L-shaped configuration. An end portion of the tenth internal electrode 42 is disposed at a position overlapping with the first electrode portion 38a of the seventh internal electrode 38 in the stacking direction and is electrically connected to the seventh internal electrode 38 through the through-hole conductor H13. The eleventh internal electrode 43 is disposed in the dielectric layer 9p on the second side face 2d side. The eleventh internal electrode 43 has a substantially L-shaped configuration. An end portion of the eleventh internal electrode 43 is disposed at a position overlapping with the first electrode portion 37a of the sixth internal electrode 37 in the stacking direction and is electrically connected to the sixth internal electrode 37 through the through-hole conductor H14.

[0052] The via conductor 44a is disposed at a position overlapping with the through-hole conductor H1 in the stacking direction and is electrically connected to the through-hole conductor H1. The via conductor 44b is disposed at a position overlapping with the through-hole conductor H9 in the stacking direction and is electrically connected to the through-hole conductor H9. The via conductor 44c is disposed at a position overlapping with the through-hole conductor H7 in the stacking direction and is electrically connected to the through-hole conductor H7. The via conductor 44d is disposed at a position overlapping with the through-hole conductor H10 in the stacking direction and is electrically connected to the through-hole conductor H10.

[0053] The twelfth internal electrode 45, the thirteenth internal electrode 46, the fourteenth internal electrode 47, and via conductors 48a and 48b are disposed in the dielectric layer 9q. The twelfth internal electrode 45 is disposed in the dielectric layer 9q on the first side surface 2c side. The twelfth internal electrode 45 extends along the first direction D1 of the element body 2. The twelfth internal electrode 45 is disposed at a position overlapping with the via conductor H1 and the via conductor H7 in the stacking direction, and is electrically connected to the via conductor H1 and the via conductor H7. The thirteenth internal electrode 46 is disposed in the dielectric layer 9q on the second end surface 2f side and the second side surface 2d side. The thirteenth internal electrode 46 has a rectangular shape. The fourteenth internal electrode 47 is disposed in the dielectric layer 9q on the first end surface 2e side and the second side surface 2d side. The fourteenth internal electrode 47 has a rectangular shape.

[0054] The via conductor 48a is disposed at a position overlapping with the via conductor H9 in the stacking direction, and is electrically connected to the via conductor H9. The via conductor 48b is disposed at a position overlapping with the via conductor H10 in the stacking direction, and is electrically connected to the via conductor H10.

[0055] The first connection conductor 49, the second connection conductor 50, the third connection conductor 51, and via conductors 52a and 52b are disposed in the dielectric layer 9r. The first connection conductor 49 is disposed in the dielectric layer 9r on the second end surface 2f side and the first side surface 2c side. The first connection conductor 49 is linear. The first connection conductor 49 is disposed at a position overlapping with the twelfth internal electrode 45 in the stacking direction, and is electrically connected to the twelfth internal electrode 45 through the via conductor H15. The first connection conductor 49 is disposed at a position overlapping with the third ground electrode 7 in the stacking direction, and is electrically connected to the third ground electrode 7 through the via conductor H17.

[0056] The second connection conductor 50 is disposed in the dielectric layer 9r on the first end surface 2e side and the first side surface 2c side. The second connection conductor 50 is linear. The second connection conductor 50 is disposed at a position overlapping with the twelfth internal electrode 45 in the stacking direction, and is electrically connected to the twelfth internal electrode 45 through the via conductor H16. The second connection conductor 50 is disposed at a position overlapping with the fourth ground electrode 8 in the stacking direction, and is electrically connected to the fourth ground electrode 8 through the via conductor H18.

[0057] The third connection conductor 51 is disposed on the second side surface 2d side in the dielectric layer 9r. The third connection conductor 51 has a rectangular shape. The third connection conductor 51 is disposed at a position overlapping with the thirteenth internal electrode 46 and the first ground electrode 5 in the stacking direction, and is electrically connected to the thirteenth internal electrode 46 and the first ground electrode 5 through a via conductor H19. The third connection conductor 51 is disposed at a position overlapping with the fourteenth internal electrode 47 and the second ground electrode 6 in the stacking direction, and is electrically connected to the fourteenth internal electrode 47 and the second ground electrode 6 through a via conductor H20.

[0058] The via conductor 52a is disposed at a position overlapping with the via conductor H9 in the stacking direction and is electrically connected to the via conductor H9. The via conductor 52a is electrically connected to the first terminal electrode 3 through the via conductor H9. The via conductor 52b is disposed at a position overlapping with the via conductor H10 in the stacking direction and is electrically connected to the via conductor H10. The via conductor 52b is electrically connected to the second terminal electrode 4 through the via conductor H10.

[0059] As Figure 1 shown, the first terminal electrode 3 and the second terminal electrode 4 are disposed on the second main surface 2b of the element body 2. The first terminal electrode 3 and the second terminal electrode 4 each have a rectangular shape. The first terminal electrode 3 is located on the second end surface 2f side of the second main surface 2b and is disposed such that the long side direction of the first terminal electrode 3 is along the second direction D2 of the element body 2. The second terminal electrode 4 is located on the first end surface 2e side of the second main surface 2b and is disposed such that the long side direction of the second terminal electrode 4 is along the second direction D2 of the element body 2. The first terminal electrode 3 and the second terminal electrode 4 are disposed at a predetermined interval in the first direction D1 of the element body 2.

[0060] The first ground electrode 5, the second ground electrode 6, the third ground electrode 7, and the fourth ground electrode 8 are disposed on the second main surface 2b of the element body 2. The first ground electrode 5, the second ground electrode 6, the third ground electrode 7, and the fourth ground electrode 8 each have a rectangular shape. The first ground electrode 5 and the second ground electrode 6 are disposed between the first terminal electrode 3 and the second terminal electrode 4. The first ground electrode 5 and the second ground electrode 6 are disposed on the second side surface 2d side of the second main surface 2b. The first ground electrode 5 is disposed on the second end surface 2f side of the second main surface 2b. The second ground electrode 6 is disposed on the first end surface 2e side of the second main surface 2b. The first ground electrode 5 and the second ground electrode 6 are disposed at a predetermined interval in the first direction D1 of the element body 2.

[0061] The third ground electrode 7 and the fourth ground electrode 8 are disposed between the first terminal electrode 3 and the second terminal electrode 4. The third ground electrode 7 and the fourth ground electrode 8 are disposed on the first side surface 2c side of the second main surface 2b. The third ground electrode 7 is disposed on the second end surface 2f side of the second main surface 2b. The third ground electrode 7 and the first ground electrode 5 are disposed at a predetermined interval in the second direction D2 of the element body 2. The fourth ground electrode 8 is disposed on the first end surface 2e side of the second main surface 2b. The fourth ground electrode 8 and the second ground electrode 6 are disposed at a predetermined interval in the second direction D2 of the element body 2. The third ground electrode 7 and the fourth ground electrode 8 are disposed at a predetermined interval in the first direction D1 of the element body 2.

[0062] The first terminal electrode 3, the second terminal electrode 4, the first ground electrode 5, the second ground electrode 6, the third ground electrode 7, and the fourth ground electrode 8 contain a conductive material (such as Ag or Pd, etc.). The first terminal electrode 3, the second terminal electrode 4, the first ground electrode 5, the second ground electrode 6, the third ground electrode 7, and the fourth ground electrode 8 are formed as sintered bodies of a conductive paste containing a conductive material (such as Ag powder or Pd powder, etc.). A plating layer is formed on the surfaces of the first terminal electrode 3, the second terminal electrode 4, the first ground electrode 5, the second ground electrode 6, the third ground electrode 7, and the fourth ground electrode 8. The plating layer is formed by electroplating, for example. The plating layer has a layer structure composed of a Cu plating layer, a Ni plating layer, and a Sn plating layer, or a layer structure composed of a Ni plating layer and a Sn plating layer, etc.

[0063] As Figure 3 shown, the stacked filter 1 includes: a first port Port1 for signal input and output, a second port Port2 for signal input and output, a first LC parallel resonance section RP1, a second LC parallel resonance section RP2, a first LC series resonance section (LC circuit section) RS1, and a second LC series resonance section (LC circuit section) RS2. The stacked filter 1 includes grounds Gnd1, Gnd2, Gnd3, Gnd4, Gnd5, and Gnd6. Each resonance section may also be referred to as a resonator or a resonance circuit.

[0064] The first port Port1 is constituted by the first terminal electrode 3. The second port Port2 is constituted by the second terminal electrode 4. The ground Gnd1 is constituted by the third ground electrode 7. The ground Gnd2 is constituted by the third ground electrode 7. The ground Gnd3 is constituted by the fourth ground electrode 8. The ground Gnd4 is constituted by the fourth ground electrode 8. The ground Gnd5 is constituted by the first ground electrode 5. The ground Gnd6 is constituted by the second ground electrode 6.

[0065] The first LC parallel resonance section RP1 is configured to include a first inductor Lin1 and a first capacitor Cin1. The first inductor Lin1 and the first capacitor Cin1 are connected in parallel. One end of the first LC parallel resonance section RP1 is connected to the first port Port1. The first inductor Lin1 is configured to include a second coil conductor 11, a sixth coil conductor 15, a tenth coil conductor 19, path conductors 22c, 23c, 24c, 25c, 26c, 28c, 29c, 30c, path conductors 22d, 23d, 24d, 25d, 26d, 28d, 29d, 30d, and via conductors H3 and H4. The first capacitor Cin1 is composed of a second internal electrode 31 and a fourth internal electrode 34.

[0066] The second LC parallel resonance section RP2 is configured to include a second inductor Lin2 and a second capacitor Cin2. The second inductor Lin2 and the second capacitor Cin2 are connected in parallel. One end of the second LC parallel resonance section RP2 is connected to the second port Port2. The second inductor Lin2 is configured to include a third coil conductor 12, a seventh coil conductor 16, an eleventh coil conductor 20, path conductors 22e, 23e, 24e, 25e, 26e, 28e, 29e, 30e, 33d, path conductors 22f, 23f, 24f, 25f, 26f, 28f, 29f, 30f, and via conductors H5 and H6. The second capacitor Cin2 is composed of a third internal electrode 32 and a fifth internal electrode 35.

[0067] The first LC series resonance section RS1 is configured to include a third inductor Lg1 and a third capacitor Cg1. One end of the first LC series resonance section RS1 is connected to the ground Gnd2, and the other end of the first LC series resonance section RS1 is connected to the ground Gnd5. The third inductor Lg1 and the third capacitor Cg1 are connected in series.

[0068] The third inductor Lg1 is configured to include a first coil conductor 10, a fifth coil conductor 14, a ninth coil conductor 18, path conductors 22a, 23a, 24a, 25a, 26a, 28a, 29a, 30a, 33a, 36a, 39a, 44a, path conductors 22b, 23b, 24b, 25b, 26b, 28b, 29b, 30b, 33b, 36b, and via conductors H1 and H2. The third capacitor Cg1 is composed of an eleventh internal electrode 43 and a fourteenth internal electrode 47.

[0069] The second LC series resonance section RS2 is configured to include a fourth inductor Lg2 and a fourth capacitor Cg2. One end of the second LC series resonance section RS2 is connected to the ground Gnd3, and the other end of the second LC series resonance section RS2 is connected to the ground Gnd6. The fourth inductor Lg2 and the fourth capacitor Cg2 are connected in series.

[0070] The fourth inductor Lg2 is configured to include a fourth coil conductor 13, an eighth coil conductor 17, a twelfth coil conductor 21, via conductors 22g, 23g, 24g, 25g, 26g, 28g, 29g, 30g, 33e, 36d, 39f, 44c, via conductors 22h, 23h, 24h, 25h, 26h, 28h, 29h, 30h, 33f, 36e, and via hole conductors H7 and H8. The fourth capacitor Cg2 is composed of a tenth internal electrode 42 and a thirteenth internal electrode 46.

[0071] The capacitor Ct1 is disposed between the first LC parallel resonance section RP1 and the ground Gnd1. The capacitor Ct1 is composed of an eighth internal electrode 40 and a twelfth internal electrode 45. The capacitor Ct2 is disposed between the second LC parallel resonance section RP2 and the ground Gnd2. The capacitor Ct2 is composed of a ninth internal electrode 41 and a twelfth internal electrode 45.

[0072] The capacitor Cl1 is disposed between the first LC parallel resonance section RP1 and the first LC series resonance section RS1. The capacitor Cl1 is composed of a fourth internal electrode 34 and a sixth internal electrode 37. The capacitor Cl2 is disposed between the second LC parallel resonance section RP2 and the second LC series resonance section RS2. The capacitor Cl2 is composed of a fifth internal electrode 35 and a seventh internal electrode 38.

[0073] The capacitors Cm1 and Cm2 are disposed between the first LC series resonance section RS1 and the second LC series resonance section RS2. The capacitors Cm1 and Cm2 are connected in parallel. The capacitor Cm1 is composed of a sixth internal electrode 37 and a tenth internal electrode 42. The capacitor Cm2 is composed of a seventh internal electrode 38 and an eleventh internal electrode 43.

[0074] The capacitors Cb1 and Cb2 are disposed between the first LC parallel resonance section RP1 and the second LC parallel resonance section RP2. The capacitors Cb1 and Cb2 are connected in series. The capacitor Cb1 is composed of a first internal electrode 27 and a fourth internal electrode 34. The capacitor Cb2 is composed of a first internal electrode 27 and a fifth internal electrode 35.

[0075] In the stacked filter 1, on the signal path between the first port Port1 and the second port Port2, between the first LC parallel resonance section RP1 and the second LC parallel resonance section RP2, a first LC series resonance section RS1 and a second LC series resonance section RS2 are provided. In the stacked filter 1, the first inductor Lin1 of the first LC parallel resonance section RP1 and the second inductor Lin2 of the second LC parallel resonance section RP2 are magnetically coupled to each other. In the stacked filter 1, the third inductor Lg1 of the first LC series resonance section RS1 and the fourth inductor Lg2 of the second LC series resonance section RS2 are magnetically coupled to each other. In the stacked filter 1, the magnetic coupling between the first inductor Lin1 of the first LC parallel resonance section RP1 and the second inductor Lin2 of the second LC parallel resonance section RP2 is stronger than the magnetic coupling between the third inductor Lg1 of the first LC series resonance section RS1 and the fourth inductor Lg2 of the second LC series resonance section RS2.

[0076] In the stacked filter 1, within the dielectric body 2, between the conductor pattern of the first inductor Lin1 constituting the first LC parallel resonance section RP1 and the conductor pattern of the second inductor Lin2 constituting the second LC parallel resonance section RP2, the conductor pattern of the third inductor Lg1 constituting the first LC series resonance section RS1 and the conductor pattern of the fourth inductor Lg2 constituting the second LC series resonance section RS2 are not arranged.

[0077] Specifically, as Figure 4As shown, between the second coil conductor 11, the sixth coil conductor 15, the tenth coil conductor 19, the via conductors 22c, 23c, 24c, 25c, 26c, 28c, 29c, 30c, the via conductors 22d, 23d, 24d, 25d, 26d, 28d, 29d, 30d and the via conductors H3 and H4 of the first inductor Lin1 constituting the first LC parallel resonance section RP1 and the third coil conductor 12, the seventh coil conductor 16, the eleventh coil conductor 20, the via conductors 22e, 23e, 24e, 25e, 26e, 28e, 29e, 30e, 33d, the via conductors 22f, 23f, 24f, 25f, 26f, 28f, 29f, 30f and the via conductors H5 and H6 of the second inductor Lin2 constituting the second LC parallel resonance section RP2, there is no arrangement of the first coil conductor 10, the fifth coil conductor 14, the ninth coil conductor 18, the via conductors 22a, 23a, 24a, 25a, 26a, 28a, 29a, 30a, 33a, 36a, 39a, 44a, the via conductors 22b, 23b, 24b, 25b, 26b, 28b, 29b, 30b, 33b, 36b and the via conductors H1 and H2 of the third inductor Lg1 constituting the first LC series resonance section RS1, and the fourth coil conductor 13, the eighth coil conductor 17, the twelfth coil conductor 21, the via conductors 22g, 23g, 24g, 25g, 26g, 28g, 29g, 30g, 33e, 36d, 39f, 44c, the via conductors 22h, 23h, 24h, 25h, 26h, 28h, 29h, 30h, 33f, 36e and the via conductors H7 and H8 of the fourth inductor Lg2 constituting the second LC series resonance section RS2.

[0078] In the stacked filter 1, within the dielectric body 2, the first LC series resonance section RS1 and the second LC series resonance section RS2 are arranged at positions sandwiching the first LC parallel resonance section RP1 and the second LC parallel resonance section RP2 therebetween, and are separately arranged at positions closer to the outside than the first LC parallel resonance section RP1 and the second LC parallel resonance section RP2. Accordingly, in the stacked filter 1, within the dielectric body 2, the distance in the first direction D1 of the dielectric body 2 between the conductor pattern of the first inductor Lin1 constituting the first LC parallel resonance section RP1 and the conductor pattern of the second inductor Lin2 constituting the second LC parallel resonance section RP2 is shorter than the distance between the conductor pattern of the third inductor Lg1 constituting the first LC series resonance section RS1 and the conductor pattern of the fourth inductor Lg2 constituting the second LC series resonance section RS2. That is, in the stacked filter 1, within the dielectric body 2, the conductor pattern of the third inductor Lg1 constituting the first LC series resonance section RS1 and the conductor pattern of the fourth inductor Lg2 constituting the second LC series resonance section RS2 are arranged to be further separated in the first direction D1 of the dielectric body 2 as compared with the conductor pattern of the first inductor Lin1 constituting the first LC parallel resonance section RP1 and the conductor pattern of the second inductor Lin2 constituting the second LC parallel resonance section RP2.

[0079] As described above, in the stacked filter 1 of the present embodiment, within the dielectric body 2, no conductor pattern of an inductor that constitutes the first LC series resonance section RS1 and the second LC series resonance section RS2 is arranged between the conductor pattern of the first inductor Lin1 constituting the first LC parallel resonance section RP1 and the conductor pattern of the second inductor Lin2 constituting the second LC parallel resonance section RP2. Thus, in the stacked filter 1, since no inductor of the first LC series resonance section RS1 and the second LC series resonance section RS2 is arranged between the first LC parallel resonance section RP1 and the second LC parallel resonance section RP2, the physical distance between the first LC parallel resonance section RP1 and the second LC parallel resonance section RP2 can be shortened. Accordingly, in the stacked filter 1, the magnetic coupling between the first inductor Lin1 and the second inductor Lin2 can be enhanced. Therefore, in the stacked filter 1, the distance between the attenuation peak (attenuation pole) of the first LC parallel resonance section RP1 and the attenuation peak of the second LC parallel resonance section RP2 can be separated. Therefore, in the stacked filter 1, the attenuation can be made steep. As a result, in the stacked filter 1, an improvement in the attenuation characteristic can be achieved.

[0080] In Figure 5 , the attenuation characteristic of the conventional stacked filter is indicated by a dotted line, and the attenuation characteristic of the stacked filter 1 of the present embodiment is indicated by a solid line. In Figure 5In this case, the horizontal axis is set to frequency [GHz], and the vertical axis is set to absolute value [dB]. In the existing laminated filter, within the element body, between the conductor pattern of the first inductor forming the first LC parallel resonance section and the conductor pattern of the second inductor forming the second LC parallel resonance section, there are conductor patterns forming the first LC series resonance section and the second LC series resonance section respectively. In Figure 5 In this case, the attenuation peak Fr1 of the first LC parallel resonance section RP1 of the laminated filter 1 and the attenuation peak Fr2 of the second LC parallel resonance section RP2 are surrounded by a dashed line. Similarly, the attenuation peak Fr11 of the first LC parallel resonance section and the attenuation peak Fr22 of the second LC parallel resonance section of the existing laminated filter are surrounded by a dashed line.

[0081] As Figure 5 shown, in the laminated filter 1, the magnetic coupling between the first LC parallel resonance section RP1 and the second LC parallel resonance section RP2 can be enhanced. Therefore, the attenuation peak Fr1 of the first LC parallel resonance section RP1 can be shifted toward the low-frequency side, and the attenuation peak Fr2 of the second LC parallel resonance section RP2 can be shifted toward the high-frequency side. As a result, in the laminated filter 1, in the high-frequency band, the distance between the attenuation peak Fr1 of the first LC parallel resonance section RP1 and the attenuation peak Fr2 of the second LC parallel resonance section RP2 can be separated compared with the attenuation peaks Fr11 and Fr22 of the existing laminated filter. Thus, in the laminated filter 1, in the high-frequency band, the attenuation can be made steep. Therefore, in the laminated filter, an improvement in the attenuation characteristic can be achieved.

[0082] The laminated filter 1 according to this embodiment includes: a first LC series resonance section RS1 formed by connecting a third inductor Lg1 and a third capacitor Cg1 in series; and a second LC series resonance section RS2 formed by connecting a fourth inductor Lg2 and a fourth capacitor Cg2 in series. Within the element body 2, the first LC series resonance section RS1 and the second LC series resonance section RS2 are arranged at positions sandwiching the first LC parallel resonance section RP1 and the second LC parallel resonance section RP2, and are separately arranged at positions closer to the outside than the first LC parallel resonance section RP1 and the second LC parallel resonance section RP2. In this structure, compared with the magnetic coupling between the first inductor Lin1 of the first LC parallel resonance section RP1 and the second inductor Lin2 of the second LC parallel resonance section RP2, the magnetic coupling between the third inductor Lg1 of the first LC series resonance section RS1 and the fourth inductor Lg2 of the second LC series resonance section RS2 becomes weaker. As a result, in the laminated filter 1, a filter with a deeper attenuation in a narrow frequency band can be realized. Therefore, in the laminated filter 1, an improvement in the attenuation characteristic can be achieved.

[0083] As described above, the embodiments of the present invention have been described. However, the present invention is not necessarily limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof.

[0084] In the above-described embodiment, an example of the embodiment in which the LC circuit section is the first LC series resonance section RS1 and the second LC series resonance section RS2 has been described. However, the LC circuit section may also be a balanced low-pass filter or the like.

[0085] In the above-described embodiment, an example of the embodiment in which the laminated filter 1 is configured as a band-pass filter including the first LC parallel resonance section RP1, the second LC parallel resonance section RP2, the first LC series resonance section RS1, and the second LC series resonance section RS2 has been described. However, the laminated filter may also be a multiplexer having the band-pass filter. In this structure, the laminated filter further includes terminal electrodes.

[0086] In the above-described embodiment, an example of the embodiment having the first LC series resonance section RS1 and the second LC series resonance section RS2 has been described. However, an LC series resonance section may also be further provided.

[0087] In the above-described embodiment, an example of the embodiment in which the first inductor Lin1 is composed of the second coil conductor 11, the sixth coil conductor 15, the tenth coil conductor 19, the path conductors 22c, 23c, 24c, 25c, 26c, 28c, 29c, 30c, and the path conductors 22d, 23d, 24d, 25d, 26d, 28d, 29d, 30d has been described. However, the first inductor Lin1 may also be composed of the second coil conductor 11, the sixth coil conductor 15, and the tenth coil conductor 19. That is, the first inductor Lin1 may also be composed of only a conductor pattern. The same applies to the second inductor Lin2, the third inductor Lg1, and the fourth inductor Lg2.

[0088] In the above-described embodiment, an example of the embodiment in which the first terminal electrode 3, the second terminal electrode 4, the first ground electrode 5, the second ground electrode 6, the third ground electrode 7, and the fourth ground electrode 8 are arranged on the second main surface 2b of the substrate 2 has been described. However, the arrangement of each electrode is not limited thereto.

Claims

1. A stacked filter, characterized in that: It includes: A body formed by stacking a plurality of insulator layers; and A first terminal and a second terminal disposed on the outer surface of the body, In the body, there are formed: a first LC parallel resonance section formed by connecting a first inductor and a first capacitor in parallel, a second LC parallel resonance section formed by connecting a second inductor and a second capacitor in parallel, and an LC circuit section formed by including an inductor and a capacitor, The LC circuit section is connected between the first LC parallel resonance section and the second LC parallel resonance section on the path between the first terminal and the second terminal, The LC circuit section is configured to include a first LC series resonance section and a second LC series resonance section, In the body, the first LC series resonance section and the second LC series resonance section are disposed at positions sandwiching the first LC parallel resonance section and the second LC parallel resonance section therebetween, In the body, between the conductor pattern of the first inductor constituting the first LC parallel resonance section and the conductor pattern of the second inductor constituting the second LC parallel resonance section, the conductor pattern of the inductor constituting the LC circuit section is not disposed, The first inductor of the first LC parallel resonance section and the second inductor of the second LC parallel resonance section are magnetically coupled.

2. The stacked filter according to claim 1, characterized in that: The first LC series resonance section is formed by connecting a third inductor and a third capacitor in series, and the second LC series resonance section is formed by connecting a fourth inductor and a fourth capacitor in series, In the body, the first LC series resonance section and the second LC series resonance section are separately disposed at positions closer to the outside than the first LC parallel resonance section and the second LC parallel resonance section.

3. The stacked filter according to claim 2, characterized in that: The first inductor, the second inductor, the third inductor, and the fourth inductor are respectively formed by a conductor pattern and a via conductor.

4. The stacked filter according to any one of claims 1 to 3, characterized in that: The stacked filter is a multiplexer having a band-pass filter, and the band-pass filter is configured to include the first LC parallel resonance section, the second LC parallel resonance section, and the LC circuit section.

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