Electronic Devices

Abstract

The present disclosure provides an electronic device. The electronic device has a peripheral region and includes a substrate, a first metal layer and a protrusion structure. The first metal layer is disposed on the substrate. The protrusion structure is disposed on the substrate and is located in the peripheral region. The first metal layer extends into the protrusion structure and ends in the protrusion structure.

Description

Technical Field

[0001] The present disclosure relates to an electronic device, and more particularly to an electronic device including a protrusion structure. Background Art

[0002] If the metal wiring extending to the peripheral area of ​​the electronic device is not properly protected, it is easy to be corroded by water vapor or oxygen, thereby affecting the electrical performance of the components in the electronic device or the display quality of the electronic device. Therefore, how to provide appropriate protection for the metal wiring in the peripheral area has become one of the research focuses of researchers in this field. Summary of the invention

[0003] The present disclosure provides an electronic device having good display quality or electrical performance.

[0004] According to an embodiment of the present disclosure, an electronic device has a peripheral region and includes a substrate, a first metal layer and a protrusion structure. The first metal layer is disposed on the substrate. The protrusion structure is disposed on the substrate and is located in the peripheral region. The first metal layer extends into the protrusion structure and ends in the protrusion structure.

[0005] Based on the above, in the embodiment of the present disclosure, the first metal layer extends into the protrusion structure and ends in the protrusion structure. The protrusion structure provides appropriate protection for the first metal layer, which can reduce the probability of the first metal layer being corroded. Therefore, the electronic device of the present disclosure can have good display quality or electrical performance.

[0006] In order to make the above features and advantages of the present disclosure more obvious and understandable, embodiments are given below with reference to the accompanying drawings for detailed description as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a partial top view schematic diagram of an electronic device according to an embodiment of the present disclosure;

[0008] Figures 2 to 8 They are Figure 1 Schematic diagram of eight sections along the median section line I-I';

[0009] FIG. 2A to FIG. 8A They are Figures 2 to 8 A magnified view of the middle protrusion structure;

[0010] Figures 2B to 8B They are Figures 2 to 8 Magnified view of the internal protrusion structure. DETAILED DESCRIPTION

[0011] The present disclosure may be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, in order to facilitate the reader's understanding and the simplicity of the drawings, the various drawings in the present disclosure only depict a portion of the electronic device / display device, and certain elements in the drawings are not drawn according to actual scale. In addition, the number and size of each element in the drawings are for illustration only and are not intended to limit the scope of the present disclosure. For example, for clarity, the relative size, thickness and position of each film layer, region or structure may be reduced or enlarged.

[0012] Certain words are used throughout this disclosure and in the claims that follow to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following description and claims, the words "having" and "including" are open-ended words and should therefore be interpreted as meaning "including but not limited to..."

[0013] The directional terms mentioned herein, such as "up", "down", "front", "back", "left", "right", etc., are only with reference to the directions of the accompanying drawings. Therefore, the directional terms used are for illustration and not for limiting the present disclosure. It should be understood that when an element or a film layer is referred to as being disposed "on" or "connected to" another element or film layer, the element or film layer may be directly on or directly connected to the other element or film layer, or there may be an intervening element or film layer between the two (indirect case). Conversely, when an element or film layer is referred to as being "directly" "on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two.

[0014] The terms "approximately", "equal to", "equal", "same", "substantially" or "approximately" mentioned herein generally represent falling within 10% of a given value or range, or represent falling within 5%, 3%, 2%, 1% or 0.5% of a given value or range. In addition, the phrases "a given range is a first value to a second value", "a given range falls within the range of a first value to a second value" indicate that the given range includes the first value, the second value and other values ​​therebetween.

[0015] In some embodiments of the present disclosure, terms such as "connection" and "interconnection" may refer to two structures being in direct contact with each other, or may refer to two structures not being in direct contact with each other, with other structures being disposed between the two structures, unless otherwise specified. Terms such as "connection" and "interconnection" may also include situations where both structures are movable or both structures are fixed. In addition, the terms "electrically connected" and "coupled" include any direct and indirect electrical connection means.

[0016] The electronic device disclosed herein may include a display device, an antenna device, a sensing device, a light-emitting device, or a splicing device, but is not limited thereto. The electronic device may include a bendable or flexible electronic device. The electronic device may, for example, include a liquid crystal, a light-emitting diode, or a quantum dot (QD). The light-emitting diode may, for example, include an organic light-emitting diode (OLED), a sub-millimeter light-emitting diode (mini LED), a micro light-emitting diode (micro LED), or a quantum dot light-emitting diode (QLED, QDLED), fluorescence, phosphorescence, or other suitable materials, or a combination thereof, but is not limited thereto. The following text will use a display device as an electronic device to illustrate the contents of the present disclosure, but the present disclosure is not limited thereto.

[0017] The display device disclosed herein may be any type of display device, such as a self-luminous display device or a non-self-luminous display device. A self-luminous display device may include a light-emitting diode, a light conversion layer or other suitable materials, or a combination thereof, but is not limited thereto. The light conversion layer may include a wavelength conversion material and / or a light filtering material, and the light conversion layer may, for example, include fluorescence, phosphorescence, quantum dots, other suitable materials, or a combination thereof, but is not limited thereto. A non-self-luminous display device may include a liquid crystal, but is not limited thereto. An organic light-emitting diode display device will be used as a display device below to illustrate the contents of the present disclosure, but the present disclosure is not limited thereto.

[0018] Figure 1 is a partial top view of an electronic device according to an embodiment of the present disclosure. Figure 1 , the electronic device 1 has a display area R1 and a peripheral area R2. The peripheral area R2 is located on at least one side of the display area R1. For example, the peripheral area R2 may be located on one side or multiple sides of the display area R1. Taking an organic light emitting diode display device as an example, a plurality of organic light emitting diodes E may be disposed in the display area R1 of the electronic device 1. The plurality of organic light emitting diodes E are arranged in an array to provide a display image. In some embodiments, the display area R1 may be defined as an area where an image can be displayed. Specifically, it may be a line connecting the outermost endpoints of the organic light emitting diodes E located at the edge (e.g. Figure 1The area defined by the dotted lines in the electronic device 1). Multiple metal traces (not shown) in the electronic device 1 may extend from the display area R1 to the peripheral area R2. Multiple organic light emitting diodes E may be electrically connected to external circuits through multiple metal traces. Multiple protrusion structures (for example, a protrusion structure PI and a protrusion structure PO) may be provided in the peripheral area R2 of the electronic device 1. The multiple protrusion structures may serve as retaining walls for the filling material in the electronic device 1 to reduce the probability of the filling material overflowing outward during packaging. The protrusion structure PI may be located between the protrusion structure PO and the display area R1. In the following embodiments, for ease of explanation, the protrusion structure PI closer to the display area R1 of the electronic device 1 is referred to as an internal protrusion structure, and the protrusion structure PO farther away from the display area R1 of the electronic device 1 is referred to as a protrusion structure.

[0019] The following combination Figures 2 to 8B Seven examples of the electronic device disclosed in the present invention are described, but it should be understood that these seven examples are only used for illustration and are not intended to limit the practicable embodiments of the electronic device disclosed in the present invention. In the following embodiments, the same or similar elements will use the same or similar reference numerals, and their redundant description will be omitted. In addition, the terms "first", "second", etc. mentioned in this specification or claims are only used to name discrete elements or distinguish different embodiments or ranges, and are not used to limit the upper or lower limit on the number of elements, nor are they used to limit the manufacturing order or setting order of the elements.

[0020] Figures 2 to 8 They are Figure 1 There are eight cross-sectional schematic diagrams along the section line II'. These seven cross-sectional schematic diagrams schematically illustrate the protrusion structure in the peripheral area of ​​the electronic device and the details of the internal protrusion structure. FIG. 2A to FIG. 8A They are Figures 2 to 8 Magnified view of the protrusion structure in the middle. Figures 2B to 8B They are Figures 2 to 8 Magnified view of the internal protrusion structure.

[0021] Please refer to Figure 2 , Figure 2A and Figure 2B The electronic device 1A includes a substrate 10, a first metal layer 11 disposed on the substrate 10, and a protrusion structure 12 disposed on the substrate 10 and located in the peripheral region R2.

[0022] The substrate 10 may carry the first metal layer 11 and the protrusion structure 12. In some embodiments, the substrate 10 may include a hard substrate or a flexible substrate. In some embodiments, the substrate 10 may include a light-transmitting substrate or a non-light-transmitting substrate. In some embodiments, the substrate 10 may be a single-layer substrate or a composite substrate.

[0023] In this embodiment, the substrate 10 includes, for example, a first substrate 100, a second substrate 102, and an intermediate layer 104. The second substrate 102 is located between the first metal layer 11 and the first substrate 100, and the intermediate layer 104 is located between the first substrate 100 and the second substrate 102. The materials of the first substrate 100 and the second substrate 102 include, for example, a flexible material such as polyimide (PI). The material of the intermediate layer 104 includes, for example, silicon oxide or nitride. In some embodiments, the thickness T100 of the first substrate 100 may be between 3 μm and 15 μm (3 μm≦T100≦15 μm), the thickness T102 of the second substrate 102 may be between 3 μm and 11 μm (3 μm≦T102≦11 μm), and the thickness T104 of the intermediate layer 104 may be between 0.3 μm and 2 μm (0.3 μm≦T104≦2 μm), but not limited thereto. In the present embodiment, the thickness T100 of the first substrate 100, the thickness T102 of the second substrate 102, and the thickness T104 of the intermediate layer 104 are, for example, 5.5 μm, 5.1 μm, and 0.6 μm, respectively. In this article, the thickness of the film layer refers to the maximum thickness of the film layer in the normal direction (or thickness direction) DT1 of the substrate 10. However, the number, type, stacking order, material or thickness of the film layers of the substrate 10 may be changed as required and are not limited to the above. In some embodiments, the thickness T102 of the second substrate 102 may be less than or equal to the thickness T100 of the first substrate 100 .

[0024] The first metal layer 11 is suitable for signal transmission. Taking the organic light emitting diode display device as an example, the first metal layer 11 can be a patterned metal layer. For example, the first metal layer 11 may include a patterned metal layer located in the display area R1 (see Figure 1 ) in the plurality of lower electrodes (not shown) of the plurality of organic light emitting diodes E, but not limited thereto. The first metal layer 11 may be a single metal layer or a metal stack layer. In some embodiments, the thickness of the first metal layer 11 may be between 50nm and 150nm (50nm≦thickness of the first metal layer 11≦150nm), or between 70nm and 110nm (70nm≦thickness of the first metal layer 11≦110nm), but not limited thereto. In the present embodiment, the first metal layer 11 includes, for example, three conductive layers. The three conductive layers are sequentially formed on the substrate 10 along the normal direction DT1 of the substrate 10. The materials of the three conductive layers are, for example, molybdenum, aluminum, molybdenum or titanium, aluminum, and titanium, in sequence. In addition, the thicknesses of the three conductive layers are, for example, 3.5nm, 77.2nm, and 5.8nm, in sequence. In some embodiments, the thicknesses of the three conductive layers of the first metal layer 11 are respectively the maximum thicknesses in the normal direction DT1, and a relatively flat portion may be selected for measurement. However, the number, type, stacking sequence, material or thickness of the first metal layer 11 can be changed according to needs and is not limited to the above.

[0025] The first metal layer 11 extends into the protrusion structure 12 and ends in the protrusion structure 12. Figure 2 As shown, the first metal layer 11 extends into the protrusion structure 12, for example, from the interior of the substrate 10 (for example, the display area R1) toward the edge of the substrate 10 (for example, the peripheral area R2), and the side of the first metal layer 11 close to the edge of the substrate 10 is located in the protrusion structure 12 and may have a distance from the outer edge S12P of the protrusion structure 12.

[0026] The protrusion structure 12 may include at least one organic insulating layer. In the embodiments disclosed herein, the protrusion structure 12 may provide appropriate protection for the first metal layer 11, reduce the probability of the first metal layer 11 being corroded, and enable the electronic device 1A to have good display quality or electrical performance. If the first metal layer 11 extending into the protrusion structure 12 is too close to the outer edge S12P of the protrusion structure 12, the probability of the first metal layer 11 being corroded may increase. On the contrary, if the first metal layer 11 extending into the protrusion structure 12 is too close to the inner edge S12N of the protrusion structure 12, insufficient protection may result due to alignment errors. In some embodiments (see Figure 2A ), the width W1 of the protrusion structure 12, and the distance G1 between the first metal layer 11 and the outer edge S12P of the protrusion structure 12 may satisfy the relationship of 0.1≦G1 / W1≦0.9, so as to enhance the protection of the first metal layer 11 by the protrusion structure 12. In some embodiments, in any cross section of the protrusion structure 12 in the normal direction DT1 of the substrate 10, the width W1 is defined as the maximum width of the protrusion structure 12 in the direction DT2, and the distance G1 is defined as the minimum distance between the first metal layer 11 and the outer edge S12P of the protrusion structure 12 in the direction DT2. The direction DT2 is perpendicular to the normal direction DT1 of the substrate 10.

[0027] According to different requirements, the electronic device 1A may further include other elements or film layers. In this embodiment, the electronic device 1A further includes a first inorganic insulating layer 14, a second inorganic insulating layer 15, an inorganic insulating layer 25, an organic insulating layer 35, a second metal layer 16, and a third metal layer 17. In addition, the protrusion structure 12 includes a first organic insulating layer 120, a second organic insulating layer 122, and a third organic insulating layer 124.

[0028] The first inorganic insulating layer 14, the second metal layer 16, the first organic insulating layer 120, the third metal layer 17, the third organic insulating layer 124, the first metal layer 11, the second organic insulating layer 122 and the second inorganic insulating layer 15 are sequentially disposed on the substrate 10, wherein the first inorganic insulating layer 14 is located between the first organic insulating layer 120 and the substrate 10, the second metal layer 16 is located between the first inorganic insulating layer 14 and the first organic insulating layer 120, the first organic insulating layer 120 is located between the second metal layer 16 and the third metal layer 17, and the third metal layer 11 is located between the first inorganic insulating layer 14 and the first organic insulating layer 120. 17 is located between the first organic insulating layer 120 and the third organic insulating layer 124, the third organic insulating layer 124 is located between the third metal layer 17 and the first metal layer 11, the first metal layer 11 is located between the third organic insulating layer 124 and the second organic insulating layer 122, the second organic insulating layer 122 is located between the first metal layer 11 and the second inorganic insulating layer 15, the second inorganic insulating layer 15 is arranged on the second organic insulating layer 122 and the first inorganic insulating layer 14, and the protrusion structure 12 is located between the second inorganic insulating layer 15 and the first inorganic insulating layer 14.

[0029] The first organic insulating layer 120, the second organic insulating layer 122, and the third organic insulating layer 124 may be made of the same or different materials. For example, the materials of the first organic insulating layer 120, the second organic insulating layer 122, and the third organic insulating layer 124 include acrylic resin or photosensitive resin, but are not limited thereto. In the present embodiment, the first organic insulating layer 120, the second organic insulating layer 122, and the third organic insulating layer 124 are made of the same or similar materials, so there is no obvious interface between the first organic insulating layer 120, the second organic insulating layer 122, and the third organic insulating layer 124. Since water and oxygen may invade along the interfaces between different materials, the first metal layer 11 extending into the protrusion structure 12 is covered by a second organic insulating layer 122 and a third organic insulating layer 124 made of the same or similar materials, and the third metal layer 17 extending into the protrusion structure 12 is covered by a first organic insulating layer 120 and a third organic insulating layer 124 made of the same or similar materials. The probability of the first metal layer 11 and the third metal layer 17 being corroded can be reduced.

[0030] The first inorganic insulating layer 14 and the second inorganic insulating layer 15 can be made of the same or different materials. For example, the materials of the first inorganic insulating layer 14 and the second inorganic insulating layer 15 may include oxides or nitrides, but are not limited thereto. Since the water and oxygen blocking ability of the inorganic insulating layer is better than the water and oxygen blocking ability of the organic insulating layer, the second inorganic insulating layer 15 and the first inorganic insulating layer 14 covering the protruding structure 12 help to improve the water and oxygen blocking effect, thereby reducing the probability of the metal layer (including the first metal layer 11, the second metal layer 16 and the third metal layer 17) being corroded. In some embodiments, the first inorganic insulating layer 14 and the second inorganic insulating layer 15 can be made of the same or similar materials, so that there is no obvious interface between the first inorganic insulating layer 14 and the second inorganic insulating layer 15, thereby reducing the probability of water and oxygen invading the protruding structure 12 from between the first inorganic insulating layer 14 and the second inorganic insulating layer 15 and corroding the metal layer. In some embodiments, at least one of the first inorganic insulating layer 14 and the second inorganic insulating layer 15 may be a stacked layer of multiple inorganic insulating layers.

[0031] The second metal layer 16 may be suitable for signal transmission. Taking the organic light emitting diode display device as an example, the second metal layer 16 may be a patterned metal layer. For example, the second metal layer 16 may include a patterned metal layer located in the display region R1 (see Figure 1 ), multiple data lines (not shown) in the substrate 10, multiple sources and multiple drains of multiple active components (not shown), but not limited to this. The second metal layer 16 may be a single metal layer or a metal stack layer. In some embodiments, the thickness of the second metal layer 16 may be between 350nm and 900nm (350nm≦thickness of the second metal layer 16≦900nm), or between 450nm and 830nm (450nm≦thickness of the first metal layer 11≦830nm), but not limited to this. In the present embodiment, the second metal layer 16 includes, for example, three conductive layers. The three conductive layers are sequentially formed on the substrate 10 along the normal direction DT1 of the substrate 10. The materials of the three conductive layers are, for example, molybdenum, aluminum, molybdenum or titanium, aluminum, and titanium in sequence. In addition, the thicknesses of the three conductive layers are, for example, 102.7nm, 609.4nm, and 54.7nm in sequence. In some embodiments, the thickness of the three conductive layers of the second metal layer 16 is the maximum thickness in the normal direction DT1, and a relatively flat portion can be selected for measurement. However, the number, type, stacking order, material or thickness of the film layers of the second metal layer 16 can be changed according to needs and are not limited to the above. In some embodiments, the thickness T2 of the second metal layer 16 can be greater than the thickness T1 of the first metal layer 11 to reduce impedance or improve the ability of signal transmission.

[0032] The second metal layer 16 extends into the protrusion structure 12 and ends in the protrusion structure 12. Figure 2 and Figure 2AAs shown, the second metal layer 16 extends from the inside of the substrate 10 (e.g., the display area R1) toward the edge of the substrate 10 (e.g., the peripheral area R2) into the protrusion structure 12, and the side of the second metal layer 16 close to the edge of the substrate 10 is located in the protrusion structure 12, wherein the distance between the second metal layer 16 and the outer edge S12P of the protrusion structure 12 is G2. Since the interface between different materials is easily invaded by water and oxygen, and the second metal layer 16 is disposed between the first inorganic insulating layer 14 and the first organic insulating layer 120 made of different materials, compared with the first metal layer 11, the second metal layer 16 can be farther from the outer edge S12P of the protrusion structure 12 (i.e., G2 is greater than G1) to enhance the protection of the second metal layer 16 (water and oxygen blocking effect).

[0033] The third metal layer 17 can be suitable for signal transmission, and the setting of the third metal layer 17 helps to improve the elasticity or flexibility of the circuit design. Taking the organic light emitting diode display device as an example, the third metal layer 17 can be a patterned metal layer. For example, the third metal layer 17 may include circuits for specific functions, such as reference signal lines, power lines or ground lines, but is not limited to this. The third metal layer 17 can be a single metal layer or a metal stack layer. In some embodiments, the thickness of the third metal layer 17 can be between 550nm and 850nm (550nm≦the thickness of the second metal layer 16≦850nm), or between 650nm and 800nm ​​(650nm≦the thickness of the second metal layer 16≦800nm), but is not limited to this. In this embodiment, the third metal layer 17, for example, includes three conductive layers. The three conductive layers are sequentially formed on the substrate 10 along the normal direction DT1 of the substrate 10. The materials of the three conductive layers are, for example, molybdenum, aluminum, molybdenum or titanium, aluminum, and titanium in sequence. In addition, the thicknesses of the three conductive layers are, for example, 68.4 nm, 561.5 nm, and 44.5 nm, respectively. In some embodiments, the thicknesses of the three conductive layers of the third metal layer 17 are respectively the maximum thicknesses in the normal direction DT1, and a relatively flat portion can be selected for measurement. However, the number, type, stacking order, material, or thickness of the film layers of the third metal layer 17 can be changed as required, and are not limited to the above. In some embodiments, the thickness T3 of the third metal layer 17 can be greater than the thickness T1 of the first metal layer 11 to reduce impedance or enhance the ability of signal transmission.

[0034] The third metal layer 17 extends into the protrusion structure 12 and ends in the protrusion structure 12. Figure 2 and Figure 2AAs shown, the third metal layer 17 extends from the inside of the substrate 10 (e.g., the display region R1) toward the edge of the substrate 10 (e.g., the peripheral region R2) into the protrusion structure 12, and a side of the third metal layer 17 close to the edge of the substrate 10 is located in the protrusion structure 12 and maintains a distance G3 from the outer edge S12P of the protrusion structure 12. In this embodiment, G3 is greater than G1, but is not limited thereto.

[0035] The electronic device 1A may further include an internal protrusion structure 18. The internal protrusion structure 18 is disposed on the substrate 10 and is located in the peripheral region R2. The protrusion structure 12 is closer to the edge of the substrate 10 than the internal protrusion structure 18, and a distance G is maintained between the protrusion structure 12 and the internal protrusion structure 18. The internal protrusion structure 18 may include at least one organic insulating layer. In the present embodiment, the internal protrusion structure 18 includes, for example, a second organic insulating layer 122 and a third organic insulating layer 124, but is not limited thereto. The first metal layer 11, the second metal layer 16, and the third metal layer 17 are located between the second inorganic insulating layer 15 and the first inorganic insulating layer 14. Figure 2 As shown, the first metal layer 11 contacts the third metal layer 17 between the protrusion structure 12 and the inner protrusion structure 18, and the third metal layer 17 contacts the second metal layer 16 between the protrusion structure 12 and the inner protrusion structure 18. In the inner protrusion structure 18, the second metal layer 16 and the third metal layer 17 remain in contact, while the first metal layer 11 and the third metal layer 17 are partially separated by the third organic insulating layer 124, and the first metal layer 11 is located between the second organic insulating layer 122 and the third organic insulating layer 124.

[0036] Figure 2 , Figure 2A and Figure 2B The relevant parameters of each film layer are listed in Table 1. However, it should be understood that the values ​​in Table 1 are only Figure 2 However, simple equivalent changes and modifications made according to the specification or claims are still within the scope of the present disclosure.

[0037] The relevant parameters in Table 1 are described as follows:

[0038] W1: maximum distance of the orthographic projection of the protrusion structure 12 on the substrate 10 in the direction DT2. In some embodiments, W1 may be between 40 μm and 80 μm (40 μm≦W1≦80 μm), or between 50 μm and 70 μm (50 μm≦W1≦70 μm), but is not limited thereto.

[0039] D1: the maximum distance of the orthographic projection of the first metal layer 11 overlapping the protrusion structure 12 on the substrate 10 in the direction DT2, and also the maximum distance in the direction DT2 between the terminal of the first metal layer 11 close to the outer edge S12P and the inner edge S12N of the protrusion structure 12. In some embodiments, D1 may be between 5 μm and 50 μm (5 μm≦D1≦50 μm), or between 10 μm and 45 μm (10 μm≦D1≦45 μm), but is not limited thereto.

[0040] D1': the maximum distance of the orthographic projection of the first metal layer 11 between the second organic insulating layer 122 and the third organic insulating layer 124 in the protrusion structure 12 on the substrate 10 in the direction DT2, and also the maximum distance of the orthographic projection of the first metal layer 11 not in contact with the third metal layer 17 in the protrusion structure 12 on the substrate 10 in the direction DT2. In some embodiments, D1' may be between 5 μm and 50 μm (5 μm≦D1'≦50 μm), or between 10 μm and 40 μm (10 μm≦D1'≦40 μm), but is not limited thereto.

[0041] D2: the maximum distance in the direction DT2 of the orthographic projection of the second metal layer 16 on the substrate 10 that is not in contact with the third metal layer 17 in the protrusion structure 12. In some embodiments, D2 may be between 5 μm and 50 μm (5 μm≦D2≦50 μm), or between 10 μm and 40 μm (10 μm≦D2≦40 μm), but is not limited thereto.

[0042] D3: the maximum distance in the direction DT2 of the orthographic projection of the third metal layer 17 that is not in contact with the second metal layer 16 in the protrusion structure 12 on the substrate 10. In some embodiments, D3 may be between 2 μm and 40 μm (2 μm≦D3≦40 μm), or between 5 μm and 35 μm (5 μm≦D3≦35 μm), but is not limited thereto.

[0043] G1: the maximum distance in the direction DT2 between the terminal of the first metal layer 11 close to the outer edge S12P and the outer edge S12P of the protrusion structure 12. In some embodiments, G1 may be between 5 μm and 60 μm (5 μm≦G1≦60 μm), or between 10 μm and 50 μm (10 μm≦G1≦50 μm), but is not limited thereto.

[0044] G2: the maximum distance in the direction DT2 between the terminal of the second metal layer 16 close to the outer edge S12P and the outer edge S12P of the protrusion structure 12. In some embodiments, G2 may be between 5 μm and 60 μm (5 μm≦G2≦60 μm), or between 10 μm and 55 μm (10 μm≦G2≦55 μm), but is not limited thereto.

[0045] G3: the maximum distance in the direction DT2 between the terminal of the third metal layer 17 close to the outer edge S12P and the outer edge S12P of the protrusion structure 12. In some embodiments, G3 may be between 5 μm and 60 μm (5 μm≦G3≦60 μm), or between 10 μm and 55 μm (10 μm≦G3≦55 μm), but is not limited thereto.

[0046] T120-12: minimum thickness of the first organic insulating layer 120 in the normal direction DT1 near the center (e.g., W1 / 2) of the protrusion structure 12. In some embodiments, T120-12 may be between 0.5 μm and 2.5 μm (0.5 μm≦T120-12≦2.5 μm), or between 1 μm and 1.7 μm (1 μm≦T120-12≦1.7 μm), but is not limited thereto.

[0047] T122-12: minimum thickness of the second organic insulating layer 122 in the normal direction DT1 near the center of the protrusion structure 12. In some embodiments, T122-12 may be between 0.5 μm and 3.5 μm (0.5 μm≦T122-12≦3.5 μm), or between 1 μm and 2.6 μm (1 μm≦T122-12≦2.6 μm), but is not limited thereto.

[0048] T124-12: minimum thickness of the third organic insulating layer 124 in the normal direction DT1 near the center of the protrusion structure 12. In some embodiments, T124-12 may be between 0.5 μm and 2 μm (0.5 μm≦T124-12≦2 μm), or between 1 μm and 1.5 μm (1 μm≦T124-12≦1.5 μm), but is not limited thereto.

[0049] T12: minimum thickness of the protrusion structure 12 in the normal direction DT1 near the center of the protrusion structure 12. In some embodiments, T12 may be between 3 μm and 7 μm (3 μm≦T12≦7 μm), or between 4 μm and 6 μm (4 μm≦T12≦6 μm), but is not limited thereto.

[0050] θ1: An angle (referred to as the first angle) between the second inorganic insulating layer 15 and the first inorganic insulating layer 14 near the outer edge S12P in the protrusion structure 12. In some embodiments, θ1 may be between 10 degrees and 50 degrees (10 degrees ≦ θ1 ≦ 50 degrees), or between 15 degrees and 40 degrees (15 degrees ≦ θ1 ≦ 40 degrees), but is not limited thereto.

[0051] θ2: An angle between the second inorganic insulating layer 15 and the first metal layer 11 near the inner edge S12N in the protrusion structure 12 (referred to as the second angle). In some embodiments, θ2 may be between 15 degrees and 55 degrees (15 degrees ≦ θ2 ≦ 55 degrees), or between 20 degrees and 45 degrees (20 degrees ≦ θ2 ≦ 45 degrees), but is not limited thereto.

[0052] θ4: An angle between the second metal layer 16 and the third metal layer 17 near the inner edge S12N in the protrusion structure 12 (referred to as the fourth angle). In some embodiments, θ4 may be between 20 degrees and 40 degrees (20 degrees ≦ θ4 ≦ 40 degrees), or between 25 degrees and 35 degrees (25 degrees ≦ θ4 ≦ 35 degrees), but is not limited thereto.

[0053] θ5: An angle between the third metal layer 17 and the first metal layer 11 near the inner edge S12N in the protrusion structure 12 (referred to as the fifth angle). In some embodiments, θ5 may be between 25 degrees and 45 degrees (25 degrees ≦ θ5 ≦ 45 degrees), or between 30 degrees and 40 degrees (30 degrees ≦ θ5 ≦ 40 degrees), but is not limited thereto.

[0054] G: minimum distance between the protrusion structure 12 and the inner protrusion structure 18 in the direction DT2 In some embodiments, G may be between 25 μm and 80 μm (25 μm≦G≦80 μm), or between 30 μm and 75 μm (30 μm≦G≦75 μm), but is not limited thereto.

[0055] W2: maximum distance of the orthographic projection of the inner protrusion structure 18 on the substrate 10 in the direction DT2. In some embodiments, W2 may be between 30 μm and 50 μm (30 μm≦W2≦50 μm), or between 35 μm and 45 μm (35 μm≦W2≦45 μm), but is not limited thereto.

[0056] W11: the maximum distance in the direction DT2 of the orthographic projection of the first metal layer 11 not connected to the third metal layer 17 in the internal protrusion structure 18 on the substrate 10. In some embodiments, W11 may be between 25 μm and 40 μm (25 μm≦W11≦40 μm), or between 30 μm and 35 μm (30 μm≦W11≦35 μm), but is not limited thereto.

[0057] W11N: the minimum distance between the first metal layer 11 not connected to the third metal layer 17 in the inner protrusion structure 18 and the inner edge S18N of the inner protrusion structure 18 in the direction DT2. In some embodiments, W11N may be between 3 μm and 6 μm (3 μm≦W11N≦6 μm), or between 4 μm and 5 μm (4 μm≦W11N≦5 μm), but is not limited thereto.

[0058] W11P: the minimum distance between the first metal layer 11 not connected to the third metal layer 17 in the inner protrusion structure 18 and the outer edge S18P of the inner protrusion structure 18 in the direction DT2. In some embodiments, W11P may be between 3 μm and 6 μm (3 μm≦W11P≦6 μm), or between 3.5 μm and 4.5 μm (3.5 μm≦W11P≦4.5 μm), but is not limited thereto.

[0059] T122-18: minimum thickness of the second organic insulating layer 122 in the normal direction DT1 near the center of the inner protrusion structure 18. In some embodiments, T122-18 may be between 1 μm and 4 μm (1 μm≦T122-18≦4 μm), or between 2 μm and 3 μm (2 μm≦T122-18≦3 μm), but is not limited thereto.

[0060] T124-18: minimum thickness of the third organic insulating layer 124 in the normal direction DT1 near the center of the inner protrusion structure 18. In some embodiments, T124-18 may be between 0.5 μm and 2.5 μm (0.5 μm≦T124-18≦2.5 μm), or between 1 μm and 2 μm (1 μm≦T124-18≦2 μm), but is not limited thereto.

[0061] T18: minimum thickness of the inner protrusion structure 18 in the normal direction DT1 near the center of the inner protrusion structure 18. In some embodiments, T18 may be between 1.5 μm and 4.5 μm (1.5 μm≦T18≦4.5 μm), or between 2 μm and 4 μm (2 μm≦T18≦4 μm), but is not limited thereto.

[0062] θ6N: An included angle between the second inorganic insulating layer 15 and the first metal layer 11 near the inner edge S18N in the inner protrusion structure 18. In some embodiments, θ6N may be between 20 degrees and 55 degrees (20 degrees ≦ θ6N ≦ 55 degrees), or between 30 degrees and 50 degrees (30 degrees ≦ θ6N ≦ 50 degrees), but is not limited thereto.

[0063] θ6P: An angle between the second inorganic insulating layer 15 and the first metal layer 11 near the outer edge S18P in the inner protrusion structure 18. In some embodiments, θ6P may be between 15 degrees and 55 degrees (15 degrees ≦ θ6P ≦ 55 degrees), or between 20 degrees and 50 degrees (20 degrees ≦ θ6P ≦ 50 degrees), but is not limited thereto.

[0064] θ7N: An included angle between the first metal layer 11 and the third metal layer 17 near the inner edge S18N in the inner protrusion structure 18. In some embodiments, θ7N may be between 20 degrees and 50 degrees (20 degrees ≦ θ7N ≦ 50 degrees), or between 25 degrees and 40 degrees (25 degrees ≦ θ7N ≦ 40 degrees), but is not limited thereto.

[0065] θ7P: An included angle between the first metal layer 11 and the third metal layer 17 near the outer edge S18P in the inner protrusion structure 18. In some embodiments, θ7P may be between 15 degrees and 45 degrees (15 degrees ≦ θ7P ≦ 45 degrees), or between 20 degrees and 40 degrees (20 degrees ≦ θ7P ≦ 40 degrees), but is not limited thereto.

[0066]

[0067] Table 1

[0068] Please refer to Figure 3 , Figure 3A and Figure 3B , the electronic device 1B and Figure 2 , Figure 2A and Figure 2B The main differences between the electronic device 1A in FIG.

[0069] In the electronic device 1B, the thickness T100 of the first substrate 100 , the thickness T102 of the second substrate 102 , and the thickness T104 of the intermediate layer 104 are, for example, 9.6 μm, 5.2 μm, and 0.6 μm, respectively, but not limited thereto.

[0070] The first metal layer 11 is a single-layer metal layer, and the thickness T1 of the first metal layer 11 is 94 nm, but not limited thereto. In some embodiments, the thickness T1 of the first metal layer 11 is the maximum thickness in the normal direction DT1, and a relatively flat portion can be selected for measurement. In the present embodiment, the first metal layer 11 includes a first portion P11 and a second portion P12. The opposite ends of the first portion P11 are respectively located in the protrusion structure 12 and the internal protrusion structure 18. The second portion P12 extends into the internal protrusion structure 18 and terminates in the internal protrusion structure 18, and the second portion P12 is separated from the first portion P11 in the internal protrusion structure 18. In other words, the second portion P12 and the first portion P11 are disconnected (separated) in the internal protrusion structure 18, rather than connected. In this way, when the first metal layer 11 in the protrusion structure 12 is corroded, the corrosion phenomenon can be reduced from spreading through the first metal layer 11 to the display area R1 (see Figure 1 ) occurs.

[0071] The second metal layer 16 includes three conductive layers, and the thickness of the three conductive layers is, for example, 85 nm, 614 nm, and 37 nm in sequence along the normal direction DT1, but is not limited thereto. In some embodiments, the thickness of the three conductive layers of the second metal layer 16 is the maximum thickness in the normal direction DT1, and a relatively flat portion can be selected for measurement. In the present embodiment, the second metal layer 16 includes a first portion P1 extending into the protrusion structure 12 and ending in the protrusion structure 12 and a plurality of second portions P2. The plurality of second portions P2 are separated from the first portion P1 and arranged from the first portion P1 toward the edge of the substrate 10. The second portion P2 of the plurality of second portions P2 that is closest to the edge of the substrate 10 overlaps with the protrusion structure 12 in the normal direction DT1 of the substrate 10. In other words, the second portion P2 that is closest to the edge of the substrate 10 does not extend to the outside of the protrusion structure 12, which can reduce the corrosion of the second metal layer 16.

[0072] The third metal layer 17 includes three conductive layers, and the thicknesses of the three conductive layers along the normal direction DT1 are, for example, 104 nm, 635 nm, and 40 nm, respectively, but not limited thereto. In some embodiments, the thicknesses of the three conductive layers of the third metal layer 17 are the maximum thicknesses along the normal direction DT1, and a relatively flat portion can be selected for measurement.

[0073] The electronic device 1B further includes a fourth metal layer 19. The fourth metal layer 19 is separated from the second metal layer 16 by the first inorganic insulating layer 14. The fourth metal layer 19 may be suitable for signal transmission. Taking the organic light emitting diode display device as an example, the fourth metal layer 19 may be a patterned metal layer, and may include a plurality of patterns 19P. For example, the fourth metal layer 19 may include a plurality of patterns 19P located in the display region R1 (see Figure 1 ), multiple scan lines (not shown) in the peripheral region R2, multiple drains of multiple active components (not shown), and multiple patterns 19P located in the peripheral region R2, but not limited thereto. In some embodiments, the protrusion structure 12 may overlap at least part of the multiple patterns 19P in the normal direction DT1, but not limited thereto. The fourth metal layer 19 may be a single metal layer or a metal stack layer. Please refer to the above description for the metal stack layer, which will not be elaborated here.

[0074] Figure 3 , Figure 3A and Figure 3B The relevant parameters of each film layer are listed in Table 2. However, it should be understood that the values ​​in Table 2 are only Figure 3 However, simple equivalent changes and modifications made according to the specification or claims are still within the scope of the present disclosure.

[0075] In Table 2, WG is the maximum distance between the separation point of the first portion P11 of the first metal layer 11 and the third metal layer 17 and the separation point of the second portion P12 of the first metal layer 11 and the third metal layer 17 in the direction DT2. In this embodiment, the protrusion structure 12 has a step-like descending edge near the outer edge S12P (e.g. Figure 3A ), in other words, the angle between the edge extension line of the protrusion structure 12 and the substrate 10 is substantially different. θ1' is the angle between the second inorganic insulating layer 15 at the step-like descending edge of the protrusion structure 12 and the substrate 10, or can be regarded as the angle between the extension line of the second inorganic insulating layer 15 at the step-like descending edge of the protrusion structure 12 and the substrate 10.

[0076] Please refer to the above for the description of other related parameters, which will not be repeated here.

[0077]

[0078] Table 2

[0079] Please refer to Figure 4 , Figure 4A and Figure 4B , the electronic device 1C and Figure 3 , Figure 3A and Figure 3B The main differences between the electronic device 1B in FIG.

[0080] In the electronic device 1C, the thickness T100 of the first substrate 100 , the thickness T102 of the second substrate 102 , and the thickness T104 of the intermediate layer 104 are, for example, 9.7 μm, 5.2 μm, and 0.7 μm, respectively, but are not limited thereto.

[0081] The first metal layer 11 may be a single metal layer, and the thickness T1 of the first metal layer 11 is 100 nm, but is not limited thereto. In some embodiments, the thickness T1 of the first metal layer 11 is the maximum thickness in the normal direction DT1, and a relatively flat portion may be selected for measurement. The second metal layer 16 includes three conductive layers, and the thicknesses of the three conductive layers are, for example, 94.8 nm, 653.1 nm, and 71.1 nm, respectively, along the normal direction DT1, but is not limited thereto. In some embodiments, the thicknesses of the three conductive layers of the second metal layer 16 are respectively the maximum thicknesses in the normal direction DT1, and a relatively flat portion may be selected for measurement. In the present embodiment, the number of the second portion P2 in the second metal layer 16 is one, but is not limited thereto. In addition, the electronic device 1C does not include Figure 3 , Figure 3A and Figure 3B In addition, the protrusion structure 12C includes a first organic insulating layer 120 and a second organic insulating layer 122, but does not include Figure 3 , Figure 3A and Figure 3B The inner protrusion structure 18C includes the second organic insulating layer 122 but does not include the third organic insulating layer 124 in the inner protrusion structure 18C. The first metal layer 11 extending into the protrusion structure 12C is located between the second organic insulating layer 122 and the first organic insulating layer 120. Figure 3 , Figure 3A and Figure 3B The third organic insulating layer 124 in the inner protrusion structure 18C is formed, and the first metal layer 11 extending into the inner protrusion structure 18C is in contact with the second metal layer 16 as a whole. Figure 3 Similarly, the electronic device 1C may include a fourth metal layer 19 having a plurality of patterns 19P. In this embodiment, the protrusion structure 12C may overlap with a portion of the pattern 19P in the normal direction DT1 and may not overlap with another portion of the pattern 19P in the normal direction DT1, but is not limited thereto.

[0082] Figure 4 , Figure 4A and Figure 4B The relevant parameters of each film layer are listed in Table 3. However, it should be understood that the values ​​in Table 3 are only Figure 4 However, simple equivalent changes and modifications made according to the specification or claims are still within the scope of the present disclosure.

[0083] In Table 3, D2' is the maximum distance of the orthographic projection of the second metal layer 16 in the protrusion structure 12C that is not in contact with the first metal layer 11 on the substrate 10 in the direction DT2. In this embodiment, the protrusion structure 12 has a step-like descending edge (such as Figure 4A As shown), in other words, the protrusion structure 12 can be roughly distinguished by a top and a bottom according to a step-like descending edge. The top can roughly correspond to the second organic insulating layer 122, and the bottom can roughly correspond to the first organic insulating layer 120, but is not limited to this. D4N is the minimum distance between the inner edge of the top of the protrusion structure 12C and the inner edge S12N of the bottom of the protrusion structure 12C in the direction DT2. D4P is the minimum distance between the outer edge of the top of the protrusion structure 12C and the outer edge S12P of the bottom of the protrusion structure 12C in the direction DT2. θ3 is the angle between the second inorganic insulating layer 15 and the second metal layer 16 in the protrusion structure 12 (referred to as the third angle). Please refer to the above for the description of other related parameters, which will not be repeated here.

[0084]

[0085] Table 3

[0086] Please refer to Figure 5 , Figure 5A and Figure 5B , the electronic device 1D and Figure 4 , Figure 4A and Figure 4B The main differences in the electronic device 1C are described as follows.

[0087] In the electronic device 1D, the thickness T100 of the first substrate 100 , the thickness T102 of the second substrate 102 , and the thickness T104 of the intermediate layer 104 are, for example, 9.9 μm, 10 μm, and 1.9 μm, respectively, but not limited thereto.

[0088] The first metal layer 11 may be a single metal layer, and the thickness T1 of the first metal layer 11 is 72.7 nm, but not limited thereto. In some embodiments, the thickness T1 of the first metal layer 11 is the maximum thickness in the normal direction DT1, and a relatively flat portion may be selected for measurement. The second metal layer 16 includes three conductive layers, and the thicknesses of the three conductive layers are, for example, 71.9 nm, 380 nm, and 37.7 nm, respectively, but not limited thereto. In some embodiments, the thicknesses of the three conductive layers of the second metal layer 16 are the maximum thickness in the normal direction DT1, and a relatively flat portion may be selected for measurement. In this embodiment, the second metal layer 16 does not include Figure 4 , Figure 4A and Figure 4B The second part P2. Figure 3 Similarly, the electronic device 1D may include a fourth metal layer 19 having a plurality of patterns 19P. In the present embodiment, the protrusion structure 12C may overlap with at least a portion of the pattern 19P in the normal direction DT1, but is not limited thereto.

[0089] Figure 5 , Figure 5A and Figure 5B The relevant parameters of each film layer are listed in Table 4. However, it should be understood that the values ​​in Table 4 are only Figure 5 However, simple equivalent changes and modifications made according to the specification or claims are still within the scope of the present disclosure.

[0090]

[0091] Table 4

[0092] Please refer to Figure 6 , Fig. 6A and Figure 6B , the electronic device 1E and Figure 5 , Figure 5A and Figure 5B The main differences in the electronic device 1D are described as follows.

[0093] In the electronic device 1E, the thickness T100 of the first substrate 100 , the thickness T102 of the second substrate 102 , and the thickness T104 of the intermediate layer 104 are, for example, 5.5 μm, 5.2 μm, and 0.7 μm, respectively, but not limited thereto.

[0094] The first metal layer 11 can be a single metal layer, and the thickness T1 of the first metal layer 11 is 88nm, but not limited thereto. In some embodiments, the thickness T1 of the first metal layer 11 is the maximum thickness in the normal direction DT1, and a relatively flat portion can be selected for measurement. The second metal layer 16 includes three conductive layers, and the thicknesses of the three conductive layers along the normal direction DT1 are, for example, 89.5nm, 589.9nm, and 34.2nm, respectively, but not limited thereto. In some embodiments, the thicknesses of the three conductive layers of the second metal layer 16 are the maximum thicknesses in the normal direction DT1, and a relatively flat portion can be selected for measurement. Figure 3 Similarly, the electronic device 1E may include a fourth metal layer 19 having at least one pattern 19P. In this embodiment, the protrusion structure 12C and the pattern 19P do not overlap in the normal direction DT1, but the present invention is not limited thereto.

[0095] Figure 6 , Fig. 6A and Figure 6B The relevant parameters of each film layer are listed in Table 5. However, it should be understood that the values ​​in Table 5 are only Figure 6 However, simple equivalent changes and modifications made according to the specification or claims are still within the scope of the present disclosure.

[0096]

[0097]

[0098] Table 5

[0099] Please refer to Figure 7 , Fig. 7A and Figure 7B , electronic device 1F and Figure 6 , Fig. 6A and Figure 6B The main differences in the electronic device 1E are described as follows.

[0100] In the electronic device 1F, the thickness T100 of the first substrate 100 , the thickness T102 of the second substrate 102 , and the thickness T104 of the intermediate layer 104 are, for example, 5.8 μm, 5.6 μm, and 1.3 μm, respectively, but not limited thereto.

[0101] The first metal layer 11 can be a single metal layer, and the thickness T1 of the first metal layer 11 is 91nm, but not limited thereto. In some embodiments, the thickness T1 of the first metal layer 11 is the maximum thickness in the normal direction DT1, and a relatively flat portion can be selected for measurement. The second metal layer 16 includes three conductive layers, and the thicknesses of the three conductive layers along the normal direction DT1 are, for example, 100nm, 660nm, and 40nm, respectively, but not limited thereto. In some embodiments, the thicknesses of the three conductive layers of the second metal layer 16 are the maximum thicknesses in the normal direction DT1, and a relatively flat portion can be selected for measurement. Figure 3 Similarly, the electronic device 1F may include a fourth metal layer 19 having at least one pattern 19P. In the present embodiment, the protrusion structure 12C and the pattern 19P do not overlap in the normal direction DT1, but the present invention is not limited thereto.

[0102] Figure 7 , Fig. 7A and Figure 7B The relevant parameters of each film layer are listed in Table 6. However, it should be understood that the values ​​in Table 6 are only Figure 7 However, simple equivalent changes and modifications made according to the specification or claims are still within the scope of the present disclosure.

[0103]

[0104] Table 6

[0105] Please refer to Figure 8 , Fig. 8A and Figure 8B , electronic device 1G and Figure 5 , Figure 5A and Figure 5B The main differences in the electronic device 1D are described as follows.

[0106] In the electronic device 1G, the thickness T100 of the first substrate 100 , the thickness T102 of the second substrate 102 , and the thickness T104 of the intermediate layer 104 are, for example, 9.3 μm, 9.5 μm, and 0.6 μm, respectively, but not limited thereto.

[0107] The first metal layer 11 may be a single metal layer, and the thickness T1 of the first metal layer 11 is 85 nm, but not limited thereto. In some embodiments, the thickness T1 of the first metal layer 11 is the maximum thickness in the normal direction DT1, and a relatively flat portion may be selected for measurement. The second metal layer 16 includes three conductive layers, and the thicknesses of the three conductive layers along the normal direction DT1 are, for example, 80 nm, 570 nm, and 20 nm, but not limited thereto. Figure 3Similarly, the electronic device 1C may include a fourth metal layer 19 having a plurality of patterns 19P. In the present embodiment, the protrusion structure 12C may overlap with at least a portion of the pattern 19P in the normal direction DT1, but is not limited thereto.

[0108] Figure 8 , Fig. 8A and Figure 8B The relevant parameters of each film layer are listed in Table 7. However, it should be understood that the values ​​in Table 7 are only Figure 8 However, simple equivalent changes and modifications made according to the specification or claims are still within the scope of the present disclosure.

[0109]

[0110] Table 7

[0111] In the embodiments disclosed herein, the protrusion structure includes at least one organic insulating layer and is located in the peripheral area of ​​the electronic device. The first metal layer can extend into the protrusion structure and end in the protrusion structure, which can provide appropriate protection for the first metal layer and reduce the probability of corrosion of the first metal layer, so that the electronic device can have good display quality or electrical performance. In some embodiments, the electronic device can further meet 0.1≦G1 / W1≦0.9 to enhance the protection of the first metal layer by the protrusion structure. In some embodiments, the metal layer extending into the protrusion structure can be coated with multiple organic insulating layers in the protrusion structure to reduce the probability of corrosion of the metal layer. In some embodiments, coating the protrusion structure with multiple inorganic insulating layers helps to enhance the water and oxygen blocking effect, thereby reducing the probability of corrosion of the metal layer extending into the protrusion structure. In some embodiments, the multiple inorganic insulating layers coating the protrusion structure can be made of the same or similar materials, so that there is no obvious interface between the multiple inorganic insulating layers, thereby reducing the probability of water and oxygen invading or corroding the metal layer extending into the protrusion structure from between the multiple inorganic insulating layers. In some embodiments, the second metal layer disposed between the inorganic insulating layer and the organic insulating layer may be further away from the outer edge S12P of the protrusion structure 12 than the first metal layer to enhance the protection of the second metal layer (water and oxygen blocking effect). In some embodiments, the first metal layer may be broken into two parts in the internal protrusion structure to reduce the probability of the corrosion phenomenon spreading to the display area through the first metal layer when the first metal layer in the protrusion structure is corroded.

[0112] The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present disclosure.

[0113] Although the embodiments and advantages of the present disclosure have been disclosed as above, it should be understood that any person skilled in the art can make changes, substitutions and modifications without departing from the spirit and scope of the present disclosure, and the features between the embodiments can be arbitrarily mixed and replaced to form other new embodiments. In addition, the scope of protection of the present disclosure is not limited to the processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person skilled in the art can understand the current or future developed processes, machines, manufacturing, material compositions, devices, methods and steps from the disclosure of the present disclosure, as long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described herein, they can all be used according to the present disclosure. Therefore, the scope of protection of the present disclosure includes the above-mentioned processes, machines, manufacturing, material compositions, devices, methods and steps. In addition, each claim constitutes a separate embodiment, and the scope of protection of the present disclosure also includes the combination of each claim and embodiment. The scope of protection of the present disclosure shall be determined by the attached claims.

Claims

1. An electronic device having a peripheral area, characterized in that: The electronic device comprises: substrate; A first metal layer is disposed on the substrate; a protrusion structure disposed on the substrate and located in the peripheral area, the protrusion structure comprising a first organic insulating layer and a second organic insulating layer, the first organic insulating layer being located between the second organic insulating layer and the substrate, and the first metal layer being located between the second organic insulating layer and the first organic insulating layer; and a second metal layer, disposed on the substrate and located between the first organic insulating layer and the substrate; wherein the first metal layer extends into the protrusion structure and ends in the protrusion structure, and the second metal layer directly contacts the first organic insulating layer; The width of the protrusion structure is W1, and W1 is the maximum width of the orthographic projection of the protrusion structure on the substrate in the direction DT2, and the direction DT2 is perpendicular to the normal direction of the substrate; In the direction DT2, the distance between the first metal layer and the outer edge of the protrusion structure is G1, the outer edge of the protrusion structure is the edge of the protrusion structure away from the first metal layer in the direction DT2, and 0.1≦G1 / W1≦0.9; A distance G2 between the second metal layer and the outer edge of the protrusion structure is greater than G1.

2. The electronic device according to claim 1, characterized in that: The substrate includes a first substrate and a second substrate. The second substrate is located between the first metal layer and the first substrate, and the thickness of the second substrate is less than or equal to the thickness of the first substrate.

3. The electronic device according to claim 1, characterized in that: Also includes: a first inorganic insulating layer, disposed on the substrate and located between the first organic insulating layer and the substrate; as well as The second inorganic insulating layer is disposed on the second organic insulating layer and the first inorganic insulating layer, and the protrusion structure is located between the second inorganic insulating layer and the first inorganic insulating layer.

4. The electronic device according to claim 3, characterized in that: The second inorganic insulating layer and the first inorganic insulating layer have a first angle in the protrusion structure, the second inorganic insulating layer and the first metal layer have a second angle in the protrusion structure, and the first angle is smaller than the second angle.

5. The electronic device according to claim 3, characterized in that: The second metal layer is located between the first organic insulating layer and the first inorganic insulating layer.

6. The electronic device according to claim 5, characterized in that: The second metal layer includes a first portion extending into and ending in the protrusion structure and at least one second portion separated from the first portion and arranged from the first portion toward an edge of the substrate.

7. The electronic device according to claim 6, characterized in that: A second portion of the at least one second portion, which is closest to the edge of the substrate, overlaps with the protrusion structure in the normal direction of the substrate.

8. The electronic device according to claim 1, characterized in that: The thickness of the second metal layer is greater than that of the first metal layer.

9. The electronic device according to claim 5, characterized in that: The second inorganic insulating layer and the first metal layer have a second angle in the protrusion structure, the second inorganic insulating layer and the second metal layer have a third angle in the protrusion structure, and the third angle is smaller than the second angle.

10. The electronic device according to claim 5, characterized in that: Also includes: A third metal layer is arranged on the substrate and located between the first metal layer and the second metal layer, and the protrusion structure also includes a third organic insulating layer, wherein the first organic insulating layer is located between the third metal layer and the second metal layer, the third organic insulating layer is located between the third metal layer and the first metal layer, and the second organic insulating layer is located between the first metal layer and the second inorganic insulating layer.

11. The electronic device according to claim 10, characterized in that: The second metal layer extends into the protrusion structure and ends in the protrusion structure, and the distance between the third metal layer and the outer edge of the protrusion structure is G3, and G3 is greater than G1.

12. The electronic device according to claim 10, characterized in that: The second inorganic insulating layer and the first metal layer have a second angle in the protrusion structure, and the third metal layer and the first metal layer have a fifth angle in the protrusion structure, wherein the fifth angle is smaller than the second angle.

13. The electronic device according to claim 5, characterized in that: Also includes: An internal protrusion structure is arranged on the substrate and located in the peripheral area, wherein the protrusion structure is closer to the edge of the substrate than the internal protrusion structure, and the first metal layer and the second metal layer are located between the second organic insulating layer and the first inorganic insulating layer.

14. The electronic device according to claim 13, characterized in that: The first metal layer includes a first portion and a second portion, the first portion has opposite ends located in the protrusion structure and the internal protrusion structure respectively, and the second portion extends into the internal protrusion structure and is separated from the first portion.

15. The electronic device according to claim 13, characterized in that: The inner protrusion structure includes at least one organic insulating layer.

16. The electronic device according to claim 13, characterized in that: The first metal layer contacts the second metal layer in a peripheral region between the protrusion structure and the inner protrusion structure.

17. The electronic device according to claim 1, characterized in that: The electronic device includes an organic light emitting diode display device.

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