Substrate processing device and substrate processing method

Abstract

The present invention provides a substrate processing device and a substrate processing method, which can reduce the residue of foreign matter such as particles while obtaining a higher removal rate of the anti-corrosion film. A substrate (11) is fixed on a turntable (14) in a housing (12) in a posture where a processing surface (S1) is separated from the upper surface of a turntable (14) by a predetermined interval and the processing surface (S1) faces downward. While the substrate (11) and the turntable (14) rotate integrally, ozone gas is ejected from an ejection portion (16) disposed in the center of the turntable (14). The ejected ozone gas is used to remove the anti-corrosion film on the processing surface (S1).

Description

Technical Field

[0001] The present invention relates to a substrate processing device such as a semiconductor wafer and a substrate processing method. Background Art

[0002] Generally, in the semiconductor wafer process, a photosensitive resin, i.e., a resist film, is widely used as a mask for etching or ion implantation to form a device structure. That is, after etching or ion implantation is performed using the resist film formed on the processing surface of the substrate as a mask, the resist film is removed from the processing surface of the substrate.

[0003] As a method for removing the resist film, a method using a mixture of sulfuric acid and hydrogen peroxide (sulfuric acid hydrogen peroxide mixture) is widely used. In addition, a method using ozone (O3) water with little environmental impact has been proposed (see patent document 1). Furthermore, there is a known method of removing the resist film using ozone or plasma, or after removing the strong degenerate layer on the surface of the resist film using plasma, removing the remaining resist film using a chemical solution, and then rinsing the treated surface using pure water (see patent document 2). When removing the resist film with ozone gas or plasma, the substrate is moved into a processing device, ozone gas is blown from above to the substrate with the treated surface facing up, or plasma is irradiated to ash the resist film, and then the substrate is transferred from the processing device to a chemical treatment device, where it is treated with a chemical solution and cleaned with pure water.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. WO2010 / 140581

[0007] Patent Document 2: Japanese Patent Application Publication No. 2009-218548 Summary of the invention

[0008] Problems to be solved by the invention

[0009] The method of removing the resist film using ozone (O3) water has little impact on the environment, but the removal rate of the resist film is low, and there is a problem that the processing time of a substrate becomes longer. On the other hand, the method of removing the resist film using ozone gas or plasma as described above leaves a large amount of foreign matter such as particles on the processed surface of the substrate, and ultimately requires sufficient cleaning with a chemical solution or pure water, so there is a problem that the processing time becomes longer.

[0010] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of achieving a high resist film removal rate while reducing the residual foreign matter such as particles.

[0011] Technical means to solve problems

[0012] The substrate processing device of the present invention includes: a turntable, which is configured to rotate freely around a vertical axis and rotates when processing a processing surface of the substrate; a substrate holding part, which is arranged on the turntable, holds the substrate in a horizontal state and rotates integrally with the turntable in a state where the processing surface is facing downward and separated from the upper surface of the turntable; a spray part, which is fixed to the lower side of the processing surface of the substrate held on the turntable and is arranged in the central part of the turntable, and has one or more nozzles for spraying the supplied fluid and supplying it to the processing surface; and an ozone gas supply part, which supplies ozone gas as the fluid to the spray part during the rotation of the turntable.

[0013] The substrate processing method of the present invention includes: a substrate holding process, using a substrate holding portion provided on a turntable to hold the substrate so that the processing surface of the substrate faces downward and is horizontal, and is in a state separated from the upper surface of the turntable that can rotate freely around a vertical axis; a rotation process, causing the turntable and the substrate to rotate integrally; and an ozone gas supply process, spraying ozone gas from the central part of the turntable to between the rotating turntable and the substrate, and supplying it to the processing surface.

[0014] Effects of the Invention

[0015] According to the present invention, ozone gas is sprayed from the center of the turntable to the space between the turntable and the substrate with the processing surface facing downward that rotates integrally with the turntable and supplied to the processing surface, thereby achieving a high removal rate while reducing the residual foreign matter such as particles. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a cross-sectional view showing the structure of a substrate processing apparatus.

[0017] Figure 2 It is a cross-sectional view showing the structure of the ejection portion.

[0018] Figure 3 1 is a flowchart showing the steps of removing the resist film.

[0019] Figure 4 This is an explanatory diagram showing an example in which four nozzle heads are provided as the ejection unit.

[0020] Figure 5 This is an explanatory diagram showing an example in which one nozzle head is provided as a discharge unit, wherein the nozzle head has two nozzles having different discharge directions, discharge amounts, and diffusion patterns of discharged fluids.

[0021] Figure 6This is an explanatory diagram showing an example in which two nozzle heads are provided as the ejection section, wherein each nozzle head has two nozzles having different ejection directions, ejection amounts, and diffusion patterns of the ejected fluid. DETAILED DESCRIPTION

[0022] Figure 1 In the embodiment, the substrate processing device 10 is a device for removing a resist film (not shown) formed on a substrate 11. The substrate processing device 10 has a dry mode for removing the resist film using ozone gas and a wet mode for removing foreign matter such as particles remaining on the substrate 11 using a processing liquid after the dry mode. The substrate 11 is, for example, a semiconductor substrate such as a silicon wafer. In this example, one surface of the substrate 11 on which various semiconductor elements and circuits are formed is a processing surface S1 to be processed, and the substrate processing device 10 is used to remove the resist film formed on the processing surface S1.

[0023] The substrate processing device 10 includes a housing 12, a turntable 14, a loading mechanism 15, a discharge unit 16, a supply unit 17, a halogen lamp heater 18, a discharge unit 19, etc., and each component is uniformly controlled by a control unit (not shown). The housing 12 is a cylindrical shape with a bottom, and an upper opening 12a having a circular opening is provided at the upper part. The upper opening 12a is formed to have a diameter larger than the substrate 11, and the substrate 11 is taken out of the housing 12 or placed in the housing 12 through the upper opening 12a. In addition, as described later, in this example, the upper opening 12a serves as an inlet for introducing external air into the housing 12.

[0024] A disc-shaped turntable 14 is accommodated in the housing 12. In addition, a substrate 11 is accommodated in the housing 12. The turntable 14 is freely rotatable around a vertical rotation axis Z, and rotates while keeping its upper surface horizontal. The turntable 14 is fixed to the upper end of a drive shaft 21. The drive shaft 21 is coaxial with the turntable 14. The drive shaft 21 penetrates the bottom surface 12b of the housing 12 in the thickness direction (up and down direction) of the bottom surface 12b of the housing 12, and is rotatably supported by a bearing 22 provided in an opening portion of the bottom surface 12b. A pulley 23 is fixed to the lower part of the drive shaft 21. A belt 26 is hung between the pulley 23 and a pulley 25 mounted on the rotating shaft of the electric motor 24. Thus, when the electric motor 24 is driven, the drive shaft 21 rotates integrally with the turntable 14. The turntable 14 rotates continuously from the beginning of the dry mode to the end of the wet mode. The rotation speed of the turntable 14 is adjusted by increasing or decreasing the speed of the electric motor 24.

[0025] The drive shaft 21 has a through hole 21a formed therein that passes through in the up-down direction. In addition, a through hole 14a connected to the through hole 21a is formed in the center of the turntable 14. A cylindrical fixed shaft 28 is disposed in the through hole 14a and the through hole 21a. The fixed shaft 28 is fixed to an external frame or the like together with the housing 12 or the like. Therefore, the turntable 14 and the drive shaft 21 rotate around the fixed shaft 28. The supply pipes 31a to 31c (see Figure 2 ) passes through the hollow portion 28a of the fixed shaft 28.

[0026] The substrate holding portion 32 for holding the substrate 11 is provided on the upper surface of the turntable 14. The substrate holding portion 32 is composed of a plurality of holding members 32a provided on the peripheral edge of the turntable 14. The plurality of holding members 32a are arranged at predetermined intervals along the circumference of the turntable 14. Each holding member 32a rotates integrally with the turntable 14. Figure 1 In the figure, only two holding members 32a are depicted, but in reality, for example, six holding members 32a are provided.

[0027] The retaining member 32a, for example, has a step formed at its front end, and the peripheral portion of the substrate 11 is placed on the step portion of each retaining member 32a. Thus, the substrate 11 is supported by the substrate retaining member 32 in a state parallel to the upper surface of the turntable 14 at a predetermined interval, that is, in a horizontal state. In addition, each retaining member 32a moves the substrate 11 in its radial direction, so that the substrate 11 is clamped by each retaining member 32a. In this way, the substrate 11 is held by the substrate retaining member 32 and fixed to be coaxial with the turntable 14. The substrate 11 fixed in this way rotates integrally with the turntable 14. The structure of the above-mentioned substrate retaining member 32 is an example and is not limited thereto. For example, the substrate retaining member 32 can also be composed of a plurality of pins that abut against the peripheral portion on the processing surface S1 side of the substrate 11 to specify the interval between the substrate 11 and the turntable 14, and a plurality of pins that clamp and fix the substrate 11 in the radial direction.

[0028] The interval between the substrate 11 and the upper surface of the turntable 14 is set to about 25 mm, for example. The interval is preferably in the range of 1 mm to 50 mm, and more preferably in the range of 10 mm to 30 mm. If the interval is greater than 1 mm, it is easy to prevent the substrate 11 from contacting the turntable 14. In addition, by making the interval about 1 mm or several mm, a high-speed airflow of ozone gas can be formed between the substrate 11 and the turntable 14 with a small supply amount. If the interval is less than 50 mm, it is easy to fill the space between the substrate 11 and the turntable 14 with a high concentration of ozone gas. In addition, if it is more than 10 mm, it is easy to make the airflow of ozone gas uniform, and if it is less than 30 mm, it is easy to maintain a higher ozone gas concentration.

[0029] The loading and placing of the substrate 11 is performed by the loading mechanism 15 through the upper opening 12a as described above. The loading mechanism 15 takes out the substrate 11 as the processing object from the storage box (not shown) and moves the substrate 11 to the position supported by the substrate holding portion 32. The substrate 11 is placed in the storage box with the processing surface S1 facing upward. Therefore, after taking out the substrate 11 from the storage box, the loading mechanism 15 turns the substrate 11 upside down so that the processing surface S1 faces downward. In addition, after taking out the processed substrate 11 from the housing 12, the loading mechanism 15 turns the substrate 11 upside down so that the processing surface S1 faces upward, and then returns the substrate 11 to the storage box.

[0030] A spraying portion 16 for spraying supplied fluid is arranged in the central portion of the turntable 14. The fluids supplied to the spraying portion 16 include: ozone gas for removing the anti-etching film, oxygen as a cooling gas for cooling the substrate 11, a chemical solution for removing foreign matter such as particles on the processing surface S1, and pure water for cleaning the processing surface S1. In this example, the chemical solution and pure water are the processing liquids. The spraying portion 16 is arranged at a position lower than the processing surface S1 of the substrate 11 held by the substrate holding portion 32. One end of the supply pipe portion 31 is connected to the spraying portion 16, and the other end is connected to the supply portion 17. The supply portion 17 is used to supply ozone gas, oxygen, chemical solution and pure water. Thus, the spraying portion 16 can selectively spray ozone gas, oxygen, chemical solution and pure water.

[0031] A halogen lamp heater 18 is disposed above the housing 12. The halogen lamp heater 18 is disposed in a posture of radiating infrared rays downward. The halogen lamp heater 18 is moved by a moving mechanism 34, such as Figure 1 As shown in FIG. 1 , the halogen lamp heater 18 moves horizontally between a heating position arranged above the upper opening 12a to heat the substrate 11 and a retreated position retreated from above the upper opening 12a to take the substrate 11 from the upper opening 12a. The halogen lamp heater 18 at the heating position is arranged at a height that forms a small gap with the peripheral edge of the upper opening 12a. Figure 1 In the figure, the gap between the halogen lamp heater 18 at the heating position and the periphery of the upper opening 12a is exaggerated for the convenience of illustration. In addition, in this example, the halogen lamp heater 18 is moved in the horizontal direction to the heating position and the retreat position, but in order not to hinder the placement and removal of the substrate 11, the halogen lamp heater 18 can also be moved in the vertical direction by using the moving mechanism 34 while being positioned upward away from the upper opening 12a as the retreat position.

[0032] When the substrate 11 is subjected to various treatments, the halogen lamp heater 18 is located at the heating position by the moving mechanism 34. The halogen lamp heater 18 at the heating position heats the substrate 11 by irradiating infrared rays to the back surface S2 (the surface opposite to the treatment surface S1) of the substrate 11 located directly below the halogen lamp heater 18 through the upper opening 12a. The halogen lamp heater 18 is turned on and irradiates infrared rays when the substrate 11 is treated with ozone gas. Since there is no obstacle between the halogen lamp heater 18 and the back surface S2, the substrate 11 can be efficiently heated. By heating the substrate 11, the oxidative decomposition of the resist film by ozone is promoted.

[0033] In addition, in this example, the halogen lamp heater 18 is used as the heater, but various other heaters may be used. In addition, if the halogen lamp heater 18 can be arranged at a sufficient interval upward from the upper opening 12a, the moving mechanism 34 may be omitted and the position of the halogen lamp heater 18 may be fixed.

[0034] A guide cylinder 35 is provided in the housing 12. The guide cylinder 35 in this example is a conical cylinder whose diameter gradually decreases from the upper part to the upper part. The guide cylinder 35 is fixed to the housing 12, for example, and its axis is adjusted to be consistent with the rotation center of the turntable 14. In addition, the lower end of the guide cylinder 35 reaches the bottom surface 12b of the housing 12. The turntable 14 is arranged in the upper opening 35a of the guide cylinder 35. The inner diameter of the opening 35a is slightly larger than the outer diameter of the turntable 14, so that the gap between the turntable 14 and the guide cylinder 35 becomes smaller. An exhaust path is formed between the guide cylinder 35 and the housing 12. In addition, by providing the guide cylinder 35, the lifting of particles caused by the rotation of the turntable 14 is prevented, the attachment of particles to the substrate 11 is suppressed, and the processing liquid and its vaporized products are prevented from flowing to the mechanism parts such as the drive shaft 21 or the bearing 22.

[0035] The discharge portion 19 is composed of the upper opening 12a as the inlet, the discharge port 37 formed on the bottom surface 12b of the housing 12, the suction device 38, etc. As the suction device 38, a pump is used, for example, and is connected to the discharge port 37 via a pipe 39. The discharge portion 19 generates a pressure difference that makes the pressure of the discharge port 37 smaller than that between the substrate 11 and the turntable 14 and the upper opening 12a by driving the suction device 38. As a result, various gases, processing liquids and their droplets flowing out from between the substrate 11 and the turntable 14, and foreign matter such as particles generated by the processing are effectively guided to the discharge port 37 and discharged to the outside of the housing 12. The suction device 38 is provided with a separation mechanism to separate and discharge the gas and liquid sucked from the discharge port 37.

[0036] In addition, by utilizing the pressure difference, external air is introduced into the housing 12 from the upper opening 12a, thereby forming an air flow from the upper opening 12a through between the housing 12 and the guide tube 35 toward the discharge port 37 ( Figure 1 Thus, ozone gas, processing liquid, vaporized product of the processing liquid, particles and other foreign matters are prevented from leaking to the outside of the housing 12 through the upper opening 12a, and various gases, processing liquid, particles and other foreign matters flowing out from between the substrate 11 and the turntable 14 are effectively introduced into the exhaust port 37 and discharged to the outside of the housing 12.

[0037] From the viewpoint of guiding the gas, liquid, particles, etc. flowing out from between the substrate 11 and the turntable 14 to the discharge port 37 by using the airflow flowing from top to bottom, the inlet constituting the discharge portion 19 may be provided at a position higher than the processing surface S1 of the substrate 11 held by the substrate holding portion 32. In addition, from the viewpoint of guiding the gas, liquid, particles, etc. flowing out from between the substrate 11 and the turntable 14 to the discharge port 37, the discharge port 37 may be provided at a position lower than the upper surface of the turntable 14. Therefore, for example, in the case of adopting a structure in which the upper opening 12a is airtightly blocked during processing, one or more openings may be provided as the inlet at a position higher than the processing surface S1 of the substrate 11 held by the substrate holding portion 32 on the side surface of the housing 12. In addition, a structure in which external air is introduced into the housing 12 from an opening at one end of a tube penetrating the housing 12 may be adopted. In this case, it is sufficient to make the opening at one end of the tube be located at a position higher than the processing surface S1 of the substrate 11 held by the substrate holding portion 32. Similarly, for example, the discharge port 37 may be provided at a position lower than the upper surface of the turntable 14 on the side of the housing 12. In addition, a structure may be adopted in which the gas and the liquid are separated and discharged to the outside of the housing 12. In addition, in the case of adopting a structure in which the upper opening 12a is blocked airtightly, the upper opening 12a is blocked with a material having a high infrared transmittance, such as quartz glass, so that the substrate 11 can be heated from the outside of the housing 12 using a halogen lamp heater 18 or the like.

[0038] like Figure 2 As shown, in this example, as the ejection portion 16, two nozzle heads 41 are provided which are fixed to the upper end of the fixed shaft 28 and arranged on the upper side of the turntable 14. Each nozzle head 41 is arranged to sandwich the rotation axis Z of the turntable 14. The nozzle head 41 is a truncated cone having a side surface 41a inclined toward the upper side, and a hollow portion 41b is formed therein. In addition, a nozzle 43 for ejecting the fluid supplied to the hollow portion 41b toward the processing surface S1 of the substrate 11 is formed on the side surface 41a. In this example, a nozzle 43 is formed on each nozzle head 41 at a portion of the side surface 41a opposite to the rotation axis Z. Each nozzle 43 ejects gas or liquid obliquely upward.

[0039] The supply unit 17 includes an ozone gas supply unit 17a, an oxygen supply unit 17b, a chemical solution supply unit 17c, and a pure water supply unit 17d. The ozone gas supply unit 17a supplies ozone gas to the hollow portion 41b of each nozzle head 41 via the supply pipe 31a in the dry mode. As described above, the ozone gas is supplied to ashed and remove the resist film. The oxygen supply unit 17b supplies oxygen to the hollow portion 41b of each nozzle head 41 via the same supply pipe 31a as the ozone gas. Oxygen is supplied after the supply of ozone gas is stopped in the dry mode. The oxygen is used as a cooling gas for cooling the substrate 11 heated to a high temperature to a temperature suitable for the subsequent processing in the wet mode.

[0040] In addition, in this example, an ozone gas supply unit 17a and an oxygen supply unit 17b are used, but the ozone gas supply unit 17a may be constituted by an ozone generator for ozonating the oxygen supplied from the oxygen supply source, and the oxygen supply unit 17b may be omitted. In this case, by turning off the ozone generator, oxygen as a cooling gas can be supplied from the ozone gas supply unit 17a. The cooling gas is not limited to oxygen, and an inert gas (such as nitrogen) or the like may also be used. When a cooling gas other than oxygen is used, it is preferred to provide a supply pipe different from the supply pipe 31a for supplying the ozone gas, and use the supply pipe to supply the cooling gas to the nozzle head 41.

[0041] The chemical solution supply unit 17c supplies the chemical solution to the hollow part 41b of each nozzle head 41 via the supply pipe 31b in the wet mode. As the chemical solution, a mixed aqueous solution SC1 (Standard Clean 1) of hydrogen peroxide and ammonia, for example, is used to remove particles on the processing surface S1. The pure water supply unit 17d supplies pure water to the hollow part 41b of each nozzle head 41 via the supply pipe 31c in order to clean (rinse with pure water) the processing surface S1 of the substrate 11. The supply of pure water is performed after the supply of the chemical solution is stopped in the wet mode.

[0042] The nozzles 43 of each nozzle head 41 and the amount of fluid supplied from the supply unit 17 to each nozzle head 41 are adjusted so that the spraying direction, the spraying amount and the diffusion pattern of the fluid such as ozone gas or chemical solution supplied to the processing surface S1 are uniform.

[0043] Alternatively, a structure may be adopted in which the ozone gas supply unit 17a, the oxygen supply unit 17b, the chemical solution supply unit 17c, and the pure water supply unit 17d are connected to each nozzle head 41 via a common supply pipe. As described above, it is preferable to use different supply pipes from the viewpoint that the treatment liquid remaining in the supply pipe due to the supply of ozone gas can be prevented from being ejected from the nozzle 43, or a mechanism for preventing the ejection can be omitted, and the supply amount of each nozzle head 41 can be independently adjusted.

[0044] Next, the function of the above structure will be described. In addition, the processing steps described below are only examples and are not intended to limit the processing steps. The suction device 38 is always driven and is in a state of sucking the inside of the housing 12. The halogen lamp heater 18 is moved to the retreat position by the moving mechanism 34. Figure 3 As shown, the substrate 11 to be processed is taken out from the box by the loading mechanism 15 (step ST1). Since the substrate 11 is contained in the box with the processing surface S1 facing upward, the loading mechanism 15 turns the taken-out substrate 11 180° so that the processing surface S1 faces downward (step ST2).

[0045] The substrate 11 after inversion is moved to the turntable 14 in the housing 12 through the upper opening 12a by the loading mechanism 15, and the periphery of the substrate 11 is placed on the steps of each holding member 32a. After the loading mechanism 15 releases the holding of the substrate 11, each holding member 32a is actuated, and the substrate 11 is held by each holding member 32a (step ST3). Thus, the substrate 11 is fixed on the turntable 14 in a state where the processing surface S1 faces downward, is spaced a predetermined distance from the upper surface of the turntable 14, and is parallel to the upper surface of the turntable 14.

[0046] After the substrate 11 is fixed, the halogen lamp heater 18 is moved to the heating position by the moving mechanism 34. Thereafter, the electric motor 24 is driven, and the turntable 14 starts to rotate integrally with the substrate 11 (step ST4).

[0047] After the turntable 14 starts rotating, the ozone gas supply unit 17a starts supplying ozone gas (step ST5). At this time, the flow rate of the ozone gas is adjusted to, for example, within a range of 2L (liters) / minute to 20L / minute. Further, the halogen lamp heater 18 is turned on (step ST6). By turning on the halogen lamp heater 18, the substrate 11 is heated from the back side S2 to a predetermined temperature. At this time, the temperature of the substrate 11 is, for example, within a range of 150°C to 450°C.

[0048] Ozone gas from the ozone gas supply unit 17a is supplied to each nozzle head 41 via the supply pipe 31a. Thus, ozone gas is ejected from the nozzle 43 of each nozzle head 41 toward the processing surface S1 of the substrate 11. The ozone gas ejected from the nozzle 43 diffuses in the circumferential direction due to the rotation of the substrate 11, and flows toward the periphery of the substrate 11. Thus, the entire surface of the processing surface S1 is exposed to the ozone gas ejected from the nozzle 43. If the anti-etching film on the processing surface S1 is exposed to the ozone gas in this way, the part is oxidized and decomposed by the ozone and gradually decomposed and removed. In addition, since the substrate 11 is heated by the halogen lamp heater 18, the oxidative decomposition of the anti-etching film based on ozone is promoted. The thermal conductivity of the ozone gas as a gas is lower than that of liquids such as ozone water, so the temperature of the substrate 11 is not easy to decrease, which effectively promotes the oxidative decomposition of the anti-etching film.

[0049] When the gas generated by the reaction of the ozone gas with the resist film and the gas containing unreacted ozone reach the periphery of the substrate 11, they are guided to the exhaust port 37 due to the pressure difference and discharged. Therefore, the gas generated by the reaction of the ozone with the resist film and the unreacted ozone gas will not leak out of the housing 12 from the upper opening 12a.

[0050] In addition, since the processing surface S1 faces downward, foreign matter such as particles generated on the processing surface S1 is unlikely to remain on the processing surface S1. The particles and the like leaving the processing surface S1 fall onto the turntable 14 or are transported to the outside of the substrate 11 together with the above-mentioned gas and discharged from the discharge port 37.

[0051] If the prescribed processing time has passed since the start of the supply of ozone gas (step ST7 is "yes"), the halogen lamp heater 18 is turned off (step ST8), the supply of ozone gas is stopped, and the supply of oxygen from the oxygen supply unit 17b is started (step ST9). The prescribed processing time is pre-set to a time that can completely remove the resist film. As described above, the processing surface S1 faces downward, and foreign matter such as particles is not easy to be retained on the processing surface S1. Therefore, at the end of the processing using the ozone gas, there are fewer foreign matter such as particles remaining on the processing surface S1.

[0052] Oxygen from the oxygen supply unit 17b is supplied to each nozzle head 41 via the supply pipe 31a, and is ejected from the nozzle 43 of each nozzle head 41. In this way, while oxygen is supplied, the rotation of the substrate 11 and the turntable 14 is continued, thereby efficiently cooling the substrate 11 to a prescribed temperature suitable for the next treatment in the wet mode. In addition, during the rotation of the substrate 11 and the turntable 14, by supplying oxygen between them, it is possible to suppress foreign matter such as particles attached to the inner wall of the housing 12 and peeled off from being introduced between the substrate 11 and the turntable 14. As a result, it is possible to prevent foreign matter such as particles from being attached to the processing surface S1 when the substrate 11 is cooled.

[0053] If the substrate 11 is cooled to a predetermined temperature (e.g., about 100° C.) (“Yes” in step ST10), the supply of oxygen is stopped (step ST11), and the process is switched to the wet mode. The temperature of the substrate 11 is measured, for example, by a non-contact temperature sensor (not shown). Alternatively, the process may be switched to the wet mode when the time required for cooling the substrate 11 to the predetermined temperature has passed.

[0054] In the wet mode, chemical treatment is first performed to remove the particles (step ST12). In addition, in the wet mode, the substrate 11 continues to rotate. During the chemical treatment, the chemical solution from the chemical solution supply unit 17c is supplied to each nozzle head 41 via the supply pipe 31b. The chemical solution is heated according to its type. The supplied chemical solution is sprayed from the nozzle 43 of each nozzle head 41 toward the processing surface S1 of the substrate 11. Thus, the chemical solution is supplied to the processing surface S1, and the chemical solution flows toward the periphery of the substrate 11 while diffusing circumferentially on the processing surface S1 due to the rotation of the substrate 11. In this way, the chemical solution is supplied to the entire surface of the processing surface S1, and the particles on the processing surface S1 are removed.

[0055] As described above, since there are few foreign matters such as particles remaining on the processing surface S1, the processing time of the chemical solution can be shortened. For example, when the chemical solution is SC1, SC1 is heated to 40°C to 80°C and supplied, and the supply of the chemical solution is stopped within 10 seconds to 60 seconds of the processing time.

[0056] After the chemical treatment, a pure water rinse treatment is performed (step ST13). Pure water is supplied from the pure water supply unit 17d to each nozzle head 41 via the supply pipe 31c, and the pure water is sprayed from the nozzle 43 of each nozzle head 41 to the processing surface S1 of the substrate 11. Thus, pure water is supplied to the processing surface S1, and the pure water diffuses in the circumferential direction on the processing surface S1 while flowing toward the periphery of the substrate 11 due to the rotation of the substrate 11. In this way, pure water is supplied to the entire surface of the processing surface S1 and cleaned. The supply of pure water is stopped after a predetermined time.

[0057] In the above-mentioned chemical treatment and pure water rinse treatment, the chemical solution and pure water are also supplied to the upper surface of the turntable 14 directly from the nozzle 43 or dropped from the processing surface S1, and diffused on the upper surface of the turntable 14. Therefore, as with the substrate 11, the upper surface of the turntable 14 is also subjected to removal of foreign matter such as particles attached thereto and cleaning with pure water. In addition, removal of foreign matter such as particles attached thereto and cleaning with pure water are also similarly performed on each retaining member 32a. The chemical solution and pure water splashed from the rotating substrate 11 and turntable 14 collide with the inner wall of the shell 12. Therefore, foreign matter such as particles attached to the inner wall of the shell 12 is removed and cleaned with pure water. In this way, the substrate processing device 10 performs internal self-cleaning of the shell 12 simultaneously with the processing of the substrate 11 in the wet mode.

[0058] After the pure water rinse treatment, the rotation speed of the turntable 14, that is, the rotation speed of the substrate 11, is increased to centrifugally dry the substrate 11 (step ST14). As a result, the pure water attached to both surfaces of the substrate 11 is scattered by the centrifugal force, and the substrate 11 is dried. At this time, the upper surface of the turntable 14 and each holder 32a are also dried.

[0059] In addition, during the chemical treatment, pure water rinsing treatment, and centrifugal drying, the chemical solution and pure water flowing out from the substrate 11 and the turntable 14, and the chemical solution and pure water adhering to the inner wall of the housing 12 and flowing down are attracted to the discharge port 37 and discharged. In addition, even if fine droplets of the chemical solution and pure water are generated, the droplets are guided to the discharge port 37 by the airflow from the upper opening 12a. Therefore, the droplets of the chemical solution and pure water do not leak out from the upper opening 12a.

[0060] After the centrifugal drying is completed, the electric motor 24 is stopped, and the rotation of the turntable 14 and the substrate 11 is stopped (step ST15). After the substrate 11 is released from the holding member 32a (step ST16), the substrate 11 is taken out through the upper opening 12a by the loading mechanism 15 (step ST17). The loading mechanism 15 turns the substrate 11 upside down so that the processing surface S1 faces upward (step ST18), and the substrate 11 is accommodated in the box (step ST19).

[0061] As described above, the processing of one substrate 11 is completed, and then the same procedure is used to process a new substrate 11. As described above, since the internal self-cleaning of the turntable 14 and the housing 12 is completed, the processing of a new substrate 11 can be immediately performed.

[0062] As described above, the substrate processing apparatus 10 performs the processing using ozone gas and the processing using the processing liquid in the same housing 12, so there is no need to set up housings and devices for each processing, and there is no need to set up a transport device for transporting the substrate between these devices.

[0063] The ejection unit in the above example is composed of two nozzle heads, but the structure of the ejection unit is not limited thereto, and may be one or more than three, and the number of nozzles may be one or more. Figure 4 Four nozzle heads 54 are provided as the ejection portion 16 at the upper end of the fixed shaft 28, and one nozzle 43 is provided on each nozzle head 54. For example, directions in which the fluids are ejected from the nozzles 43 are staggered by 90 degrees. Figure 5In the embodiment, a nozzle head 55 is provided as the ejection part 16, and two nozzles 43a and 43b are provided on the nozzle head 55, and the ejection direction, ejection amount and diffusion pattern of the ejected fluid are different. Relatively speaking, the ejection amount of the nozzle 43a and the diffusion range of the ejected fluid are small, and the ejection amount of the nozzle 43b and the diffusion range of the ejected fluid are large. Figure 6 In the embodiment, two nozzles 43c to 43f are provided on each of the two nozzle heads 56 as the ejection portion 16, and the ejection directions, ejection amounts, and diffusion patterns of the ejected fluids of the nozzles 43c to 43f are different from each other.

[0064] In the above description, the ejection unit is disposed on the turntable, but it only needs to be disposed below the processing surface of the substrate, for example, the surface on which the nozzle is formed may be set at the same height as the upper surface of the turntable or at a position lower than the upper surface of the turntable. In addition, a nozzle for ejecting a gas such as ozone gas and a nozzle for ejecting a processing liquid may be separately provided.

[0065] In the above-mentioned example, a guide cylinder is provided in the housing, but a plurality of guide cylinders with different heights of the upper opening may also be configured to be arranged to make the rotation center of the turntable consistent with each axis and to make the turntable lift in a manner that can rotate in each opening formed on the top of each guide cylinder. According to this structure, a plurality of paths of airflow are formed between the outermost guide cylinder and the housing and between the guide cylinder and the guide cylinder. Thus, according to the type of the gas or treatment liquid supplied, the height of the turntable is changed to process, thus, the flow path of the gas or treatment liquid flowing out between the turntable and the substrate can be changed, and they can be discharged outside the housing respectively. In addition, about such a structure, there is record in Japanese Patent Laid-Open No. 2012-209559 Gazette and Japanese Patent Laid-Open No. 2007-180268 Gazette.

[0066] Description of Reference Numerals

[0067] 10: Substrate processing equipment

[0068] 11: Substrate

[0069] 12: Shell

[0070] 12a: Upper opening

[0071] 14: Turntable

[0072] 16: Ejection

[0073] 17: Supply Department

[0074] 19: Discharge section

[0075] 32: Substrate holding part

[0076] 43: Nozzle

Claims

1. A substrate processing device, characterized in that: include: A turntable is configured to rotate freely around a vertical axis, and the turntable is rotated when processing the processing surface of the substrate; A substrate holding part is arranged on the turntable, so that the processing surface is facing downward and is separated from the upper surface of the turntable to hold the substrate horizontally, and the substrate holding part rotates integrally with the turntable; a spraying portion fixed to a lower side than the processing surface of the substrate held on the turntable and arranged at a central portion of the turntable, and having one or more nozzles for spraying and supplying the supplied fluid to the processing surface; and an ozone gas supplying unit for supplying ozone gas as the fluid to the ejecting unit during the rotation of the turntable, The substrate processing device comprises: a dry mode, in which ozone gas is supplied from the ozone gas supply unit to the ejection unit to process the processing surface with the ozone gas; a wet mode, in which the processing surface of the substrate rotating integrally with the turntable is processed with a processing liquid after the dry mode is switched to the wet mode, and, The substrate processing apparatus includes: a processing liquid supply unit configured to supply the processing liquid as the fluid to the ejection unit in the wet mode, and The cooling gas supply unit supplies cooling gas to the ejection unit instead of ozone gas before the transition to the wet mode, thereby cooling the substrate rotating integrally with the turntable.

2. The substrate processing apparatus according to claim 1, wherein: include: The heater heats the substrate held by the substrate holding portion from above when the ozone gas is supplied from the ozone gas supply portion to the ejection portion.

3. The substrate processing apparatus according to claim 1, wherein: The processing liquid supply unit supplies a chemical solution for removing particles as the processing liquid to the discharge unit, and then supplies pure water.

4. The substrate processing apparatus according to claim 1, wherein: The ejection unit includes a plurality of nozzles, and each nozzle ejects the fluid in a different diffusion pattern or ejection amount.

5. The substrate processing apparatus according to claim 1, wherein: include: a housing, accommodating the substrate together with the turntable; as well as The discharge part has a discharge port provided at a position lower than the upper surface of the turntable, and when ozone gas is supplied to the ejection part, a pressure difference is generated so that the pressure of the discharge port is lower than the pressure between the substrate held on the turntable and the turntable.

6. A substrate processing method, characterized in that: include: A substrate holding step, using a substrate holding portion provided on the turntable, to hold the substrate so that the processing surface of the substrate faces downward and is horizontal and is separated from the upper surface of the turntable that is rotatable around a vertical axis; A rotating step, causing the turntable and the substrate to rotate integrally; an ozone gas supplying step of spraying ozone gas from a central portion of the turntable to a space between the rotating turntable and the substrate, and supplying the ozone gas to the processing surface; a treatment liquid supplying step, which is transferred to the treatment liquid supplying step after the ozone gas supplying step, for spraying the treatment liquid from the central part of the turntable to between the rotating turntable and the substrate and supplying the treatment liquid to the treatment surface; In the cooling step, after the ozone gas supplying step and before the process liquid supplying step, the turntable and the substrate are rotated continuously and cooling gas is supplied between the turntable and the substrate to cool the substrate.

7. The substrate processing method according to claim 6, wherein: have: The heating step heats the substrate from above during the ozone gas supplying step.

8. The substrate processing method according to claim 6, wherein: In the treatment liquid supplying step, pure water is supplied as the treatment liquid after supplying a chemical solution for removing particles.

9. The substrate processing method according to claim 6, wherein: have: A drying process is performed after the processing liquid supply process to increase the rotation speed of the turntable to dry the turntable and the substrate.

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