Substrate processing equipment

Abstract

The present invention provides a substrate processing device, which suppresses the generation of discharge. The substrate processing device includes: a first plate having a first gas introduction path; a second plate having a second gas introduction path; and a gas introduction component, which is arranged between the first plate and the second plate and connects the first gas introduction path with the second gas introduction path, and the gas introduction component includes: an outer cylinder, which connects the first gas introduction path with the second gas introduction path; and a core material, which is arranged in the outer cylinder, and the core material includes a shaft body and an elastic porous body.

Description

Technical Field

[0001] The invention relates to a substrate processing device. Background Art

[0002] In order to improve the thermal conductivity between a substrate and a support table for supporting the substrate, a substrate processing apparatus is known in which a heat-conducting gas such as He gas is supplied between the upper surface of the support table and the back surface of the substrate.

[0003] Patent Document 1 discloses that, in a helium supply line for supplying helium gas to an electrostatic chuck, an insulating member having a spiral groove is disposed in a cylindrical cavity of an insulator.

[0004] <Prior Art Literature>

[0005] <Patent Documents>

[0006] Patent Document 1: U.S. Patent No. 8503151 Summary of the invention

[0007] <Problems to be Solved by the Invention>

[0008] In one aspect, the present invention provides a substrate processing apparatus that suppresses generation of discharge.

[0009] <Methods used to solve the problem>

[0010] In order to solve the above-mentioned problems, according to one method, a substrate processing device is provided, comprising: a first plate member, which has a first gas introduction path; a second plate member, which has a second gas introduction path; and a gas introduction component, which is arranged between the above-mentioned first plate member and the above-mentioned second plate member, and connects the above-mentioned first gas introduction path and the above-mentioned second gas introduction path, and the above-mentioned gas introduction component has: an outer cylinder body, which connects the above-mentioned first gas introduction path and the above-mentioned second gas introduction path; and a core material, which is arranged in the above-mentioned outer cylinder body, and the above-mentioned core material has a shaft body and an elastic porous body.

[0011] <Effects of the Invention>

[0012] According to one aspect, a substrate processing apparatus that suppresses generation of discharge can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a cross-sectional schematic diagram showing an example of a substrate processing apparatus according to an embodiment.

[0014] Figure 2 The diagram is a partially enlarged cross-sectional schematic diagram of a substrate processing apparatus according to an embodiment.

[0015] Figure 3 β is a graph showing an example of a region where discharge occurs depending on the inter-electrode distance and the voltage. DETAILED DESCRIPTION

[0016] Hereinafter, the mode for implementing the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same reference numerals are given to the same components, and repeated descriptions may be omitted.

[0017] <Substrate processing apparatus>

[0018] use Figure 1 A substrate processing apparatus 1 according to one embodiment will be described. Figure 1 It is a cross-sectional schematic diagram showing an example of a substrate processing apparatus according to an embodiment.

[0019] The substrate processing device 1 includes a chamber 10. The chamber 10 provides an internal space 10s therein. The chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. The chamber body 12 is formed of, for example, aluminum. A film having corrosion resistance is provided on the inner wall surface of the chamber body 12. The film may be a ceramic such as aluminum oxide or yttrium oxide.

[0020] A passage 12p is formed in the side wall of the chamber body 12. The substrate W is transferred between the internal space 10s and the outside of the chamber 10 through the passage 12p. The passage 12p is opened and closed by a gate valve 12g provided in the side wall of the chamber body 12.

[0021] A support portion 13 is provided on a base plate 12b as a bottom plate of the chamber body 12. The support portion 13 is formed of an insulating material. The support portion 13 has a substantially cylindrical shape. The support portion 13 extends upward from the bottom of the chamber body 12 in the internal space 10s. The support portion 13 has a support table 14 at its upper portion. The support table 14 is configured to support the substrate W in the internal space 10s.

[0022] The support platform 14 has a lower electrode 18 and an electrostatic chuck 20. The support platform 14 may further have an electrode plate 16. The electrode plate 16 is formed of a conductor such as aluminum and has a substantially disc shape. The lower electrode 18 is provided on the electrode plate 16. The lower electrode 18 is formed of a conductor such as aluminum and has a substantially disc shape. The lower electrode 18 is electrically connected to the electrode plate 16.

[0023] The electrostatic chuck 20 is disposed on the lower electrode 18. The substrate W is placed on the upper surface of the electrostatic chuck 20. The electrostatic chuck 20 has a main body and an electrode. The main body of the electrostatic chuck 20 has a substantially disc shape and is formed of a dielectric. The electrode of the electrostatic chuck 20 is a film-shaped electrode, which is disposed in the main body of the electrostatic chuck 20. The electrode of the electrostatic chuck 20 is connected to a DC power supply 20p through a switch 20s. If a voltage from the DC power supply 20p is applied to the electrode of the electrostatic chuck 20, an electrostatic attraction is generated between the electrostatic chuck 20 and the substrate W. Under the action of this electrostatic attraction, the substrate W is held by the electrostatic chuck 20.

[0024] An edge ring 25 is disposed on the peripheral portion of the lower electrode 18 so as to surround the edge of the substrate W. The edge ring 25 improves the in-plane uniformity of the plasma treatment on the substrate W. The edge ring 25 can be formed of silicon, silicon carbide, quartz, or the like.

[0025] A flow path (not shown) is provided inside the lower electrode 18. In the flow path, a heat exchange medium (e.g., a refrigerant) is supplied from a cooling unit (not shown) provided outside the chamber 10 through a pipe (not shown). The heat exchange medium supplied to the flow path is returned to the cooling unit through a pipe (not shown). In the substrate processing apparatus 1, the temperature of the substrate W placed on the electrostatic chuck 20 is adjusted by heat exchange between the heat exchange medium and the lower electrode 18.

[0026] In the substrate processing apparatus 1, a gas supply line 22 is provided. The gas supply line 22 supplies a heat-conducting gas (e.g., He gas) from a heat-conducting gas supply mechanism to between the upper surface of the electrostatic chuck 20 and the back surface of the substrate W. The gas supply line 24 supplies a heat-conducting gas (e.g., He gas) from a heat-conducting gas supply mechanism to between the upper surface of the lower electrode 18 and the back surface of the edge ring 25.

[0027] The substrate processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the support table 14. The upper electrode 30 is supported on the upper portion of the chamber body 12 via a member 32. The member 32 is formed of an insulating material. The upper electrode 30 and the member 32 close the upper opening of the chamber body 12.

[0028] The upper electrode 30 may include a top plate 34 and a support body 36. The lower surface of the top plate 34 is the lower surface on the side of the internal space 10s, which defines the internal space 10s. The top plate 34 may be formed of a low-impedance conductor or semiconductor that generates less Joule heat. The top plate 34 has a plurality of gas discharge holes 34a that penetrate the top plate 34 in the plate thickness direction.

[0029] The support body 36 supports the top plate 34 in a detachable manner. The support body 36 is formed of a conductive material such as aluminum. A gas diffusion chamber 36a is provided inside the support body 36. The support body 36 has a plurality of gas holes 36b extending downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are respectively connected to the plurality of gas exhaust holes 34a. A gas inlet 36c is formed in the support body 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0030] The gas supply pipe 38 is connected to a valve group 42, a flow controller group 44, and a gas source group 40. The gas source group 40, the valve group 42, and the flow controller group 44 constitute a gas supply unit. The gas source group 40 includes a plurality of gas sources. The valve group 42 includes a plurality of on-off valves. The flow controller group 44 includes a plurality of flow controllers. The plurality of flow controllers of the flow controller group 44 are respectively mass flow controllers or pressure-controlled flow controllers. The plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 through the corresponding on-off valves of the valve group 42 and the corresponding flow controllers of the flow controller group 44.

[0031] In the substrate processing apparatus 1, a protective member 46 is detachably provided along the inner wall surface of the chamber body 12 and the outer periphery of the support portion 13. The protective member 46 is used to prevent the reaction byproducts from adhering to the chamber body 12. The protective member 46 is formed by forming a corrosion-resistant film on the surface of a substrate formed of aluminum, for example. The corrosion-resistant film can be formed of ceramics such as yttrium oxide.

[0032] A baffle plate 48 is provided between the support portion 13 and the side wall of the chamber body 12. The baffle plate 48 is formed by, for example, forming a film having corrosion resistance (a film of yttrium oxide, etc.) on the surface of a base material formed of aluminum. A plurality of through holes are formed in the baffle plate 48. An exhaust port 12e is provided below the baffle plate 48 and at the bottom of the chamber body 12. The exhaust port 12e is connected to an exhaust device 50 through an exhaust pipe 52. The exhaust device 50 includes a pressure regulating valve and a vacuum pump such as a turbomolecular pump.

[0033] The substrate processing device 1 includes a first high-frequency power supply 62 and a second high-frequency power supply 64. The first high-frequency power supply 62 is a power supply for generating a first high-frequency power. The first high-frequency power has a frequency suitable for generating plasma. The frequency of the first high-frequency power is, for example, a frequency in the range of 27 MHz to 100 MHz. The first high-frequency power supply 62 is connected to the lower electrode 18 through a matcher 66 and an electrode plate 16. The matcher 66 has a circuit for matching the output impedance of the first high-frequency power supply 62 with the impedance of the load side (lower electrode 18 side). It should be noted that the first high-frequency power supply 62 can also be connected to the upper electrode 30 through the matcher 66. The first high-frequency power supply 62 constitutes an example of a plasma generating unit.

[0034] The second high-frequency power source 64 is a power source for generating a second high-frequency power. The second high-frequency power has a frequency lower than that of the first high-frequency power. When the second high-frequency power is used together with the first high-frequency power, the second high-frequency power is used as a high-frequency power for biasing ions introduced into the substrate W. The frequency of the second high-frequency power is, for example, a frequency in the range of 400kHz to 13.56MHz. The second high-frequency power source 64 is connected to the lower electrode 18 via a matcher 68 and an electrode plate 16. The matcher 68 has a circuit for matching the output impedance of the second high-frequency power source 64 with the impedance of the load side (lower electrode 18 side).

[0035] It should be noted that the second high-frequency power may be used instead of the first high-frequency power, that is, only a single high-frequency power may be used to generate plasma. In this case, the frequency of the second high-frequency power may be a frequency greater than 13.56 MHz, for example, 40 MHz. The substrate processing device 1 may not include the first high-frequency power supply 62 and the matching device 66. The second high-frequency power supply 64 constitutes an example of a plasma generating unit.

[0036] In the substrate processing apparatus 1, gas is supplied from the gas supply unit to the internal space 10s, thereby generating plasma. In addition, by supplying the first high-frequency power and / or the second high-frequency power, a high-frequency electric field is generated between the upper electrode 30 and the lower electrode 18. The generated high-frequency electric field is used to generate plasma.

[0037] The substrate processing apparatus 1 includes a power supply 70. The power supply 70 is connected to the upper electrode 30. The power supply 70 applies a voltage to the upper electrode 30 for introducing positive ions existing in the internal space 10s into the top plate 34.

[0038] The substrate processing device 1 may further include a control unit 80. The control unit 80 may be a computer including a processor, a storage unit such as a memory, an input device, a display device, and an input and output interface of a signal. The control unit 80 is used to control various parts of the substrate processing device 1. In the control unit 80, an operator can use an input device to input instructions in order to manage the substrate processing device 1. In addition, in the control unit 80, the operating status of the substrate processing device 1 can be visualized through a display device. In addition, a control program and scheme data are stored in the storage unit. The control program is executed by the processor in order to perform various processes in the substrate processing device 1. The processor executes the control program and controls various parts of the substrate processing device 1 according to the scheme data.

[0039] Here, the gas supply lines 22 and 24 will be further described.

[0040] The base plate 12b is provided with gas introduction paths 26a and 26b. The electrode plate 16 of the support table 14 is provided with gas introduction paths 28a and 28b. The gas introduction path 28a penetrates the electrode plate 16, the lower electrode 18, and the electrostatic chuck 20, and opens at a position where the substrate W is placed. The gas introduction path 28b penetrates the electrode plate 16 and the lower electrode 18, and opens at a position where the edge ring 25 is placed.

[0041] Gas introduction components 100a and 100b are provided between the electrode plate 16 to which high frequency power is applied and the grounded base plate 12b. The gas introduction component 100a connects the gas introduction path 26a and the gas introduction path 28a. The gas supply line 22 has the gas introduction path 26a, the gas introduction component 100a, and the gas introduction path 28a. The gas introduction component 100b connects the gas introduction path 26b and the gas introduction path 28b. The gas supply line 24 has the gas introduction path 26b, the gas introduction component 100b, and the gas introduction path 28b.

[0042] The gas introduction member 100a and the gas introduction member 100b have the same structure. Therefore, the gas introduction member 100b of the gas supply line 24 will be described, and the repeated description of the gas introduction member 100a of the gas supply line 22 will be omitted.

[0043] For the gas introduction part 100b, while referring to Figure 1 , while using Figure 2 Further explanation. Figure 2 It is a partially enlarged cross-sectional schematic diagram of the substrate processing apparatus 1 according to one embodiment, in which the upper vicinity of the gas introduction member 100 b is enlarged.

[0044] like Figure 2 As shown, a recess 16a communicating with the gas introduction path 28b is formed on the lower surface of the electrode plate 16. An eliminator 16b is arranged in the recess 16a. The eliminator 16b is formed of a conductor such as aluminum as the electrode plate 16. The eliminator 16b is fixed to the electrode plate 16 by a fixing member 16c and is electrically connected to the electrode plate 16. The height of the lower surface of the eliminator 16b is substantially equal to the height of the lower surface of the electrode plate 16.

[0045] The gas introduction member 100 b includes an outer cylindrical body 110 and a core material 120 disposed in the outer cylindrical body 110 .

[0046] The outer cylinder 110 has a cylindrical shape. The outer cylinder 110 is formed of an insulating material such as resin (polychlorotrifluoroethylene, etc.) or quartz. The upper end of the outer cylinder 110 is mounted on the lower surface of the electrode plate 16 via a sealing member 16d. The lower end of the outer cylinder 110 is mounted on the upper surface of the base plate 12b via a sealing member (not shown). Thus, the outer cylinder 110 connects the gas introduction path 26b of the base plate 12b with the gas introduction path 28b of the electrode plate 16.

[0047] The core material 120 includes a shaft body 130 and an elastic porous body 140 .

[0048] The shaft 130 is formed of insulating materials such as resin (polychlorotrifluoroethylene, etc.) and quartz, similarly to the outer cylinder 110. A spiral groove is formed between the outer circumference of the shaft 130 and the inner circumference of the outer cylinder 110 corresponding to the outer circumference of the shaft 130, so that the heat transfer gas can flow. Figure 2 In the example shown, a spiral groove 131 is formed on the outer peripheral surface of the shaft body 130. In other words, the shaft body 130 has a core shaft 135 and a spiral flange 136.

[0049] Here, a potential difference is generated between the electrode plate 16 and the base plate 12b. Therefore, in the gas introduction component 100b, the axial gaps (for example, the gap between the electrode plate 16 and the core material 120, the spiral groove 131 between the flanges 136 that are separated and connected (Japanese original text: detached) from the axial view, the gap between the base plate 12b and the core material 120, etc.) can be regarded as capacitors. That is, the gas introduction component 100b arranged between the electrode plate 16 and the base plate 12b can be regarded as capacitors arranged in series.

[0050] The charge Q of the capacitor is expressed by equation (1) using the electrostatic capacitance C and the voltage V. In addition, the electrostatic capacitance C, which is regarded as a parallel plate capacitor, is expressed by equation (2) using the dielectric constant ε, the area S, and the interval d.

[0051] (Mathematical formula 1)

[0052] Q=CV …(1)

[0053]

[0054] Furthermore, equation (3) is derived from equation (1) and equation (2).

[0055] (Mathematical formula 2)

[0056]

[0057] Figure 3This is a graph showing an example of the area where discharge occurs based on the distance between electrodes and the voltage. Here, it is assumed that the space between electrodes is filled with a heat-conducting gas (He gas) and the pressure of the heat-conducting gas is constant. Figure 3 In the graph, the horizontal axis represents the distance d between the electrodes, and the vertical axis represents the voltage V between the electrodes. Figure 3 A curve 301 of φ represents a discharge start voltage (Paschen curve). In a region (discharge region) above the discharge start voltage, discharge occurs between the electrodes.

[0058] Here, as shown in equation (3), by setting the interval d to be narrower, the voltage V can be set to be smaller. Figure 3 As shown by comparing the point 302 and the point 303, by setting the interval d to be narrower, the voltage V can be reduced compared to the discharge start voltage (curve 301), thereby preventing discharge.

[0059] That is, the shaft body 130 having the spiral groove 131 formed on the outer peripheral surface allows the heat transfer gas to flow, and sets the axial gap d to be narrow, thereby preventing discharge.

[0060] It should be noted that the spiral groove formed in the gas introduction member 100 b is not limited thereto, and the spiral groove may be formed on the outer peripheral surface of the shaft body 130 and / or on a portion of the inner peripheral surface of the outer cylinder 110 corresponding to the outer peripheral surface of the shaft body 130 .

[0061] An elastic porous body 140 is disposed between the electrode plate 16 and the shaft body 130 .

[0062] The elastic porous body 140 is formed of an elastically deformable insulating material such as fluororubber or vulcanized rubber. Specifically, the Young's modulus of the elastic porous body 140 is preferably in the range of 1 MPa to 3 MPa. In addition, the hardness of the elastic porous body 140 is preferably in the range of 20 to 90 under the A-type durometer specified in JIS K6253. In addition, the thickness of the elastic porous body 140 is preferably 5 mm or more.

[0063] In addition, the elastic porous body 140 is formed so that the heat-conducting gas can flow. Specifically, the elastic porous body 140 can be a foam. The elastic porous body 140 as a foam has irregular interconnected bubbles, and is formed so that the heat-conducting gas can flow. In addition, the elastic porous body 140 can also be a labyrinth structure in which the gaps for the heat-conducting gas to flow are formed in a labyrinth shape.

[0064] The elastic porous body 140 is disposed between the upper end of the shaft body 130 and the lower surface of the electrode plate 16. The elastic porous body 140 is elastically deformed, so that the lower end of the elastic porous body 140 is in contact with the upper end of the shaft body 130, and the upper end of the elastic porous body 140 is in contact with the lower surface of the electrode plate 16. Thus, in the region from the upper end of the shaft body 130 to the lower surface of the electrode plate 16, the heat-conducting gas can flow, and the axial gap is set to be narrow, thereby preventing discharge. In addition, the elastically deformed elastic porous body 140 presses the shaft body 130 toward the base plate 12b, thereby reducing the gap between the lower end of the shaft body 130 and the base plate 12b, thereby preventing discharge.

[0065] In addition, since the heat of the plasma generated in the internal space 10s of the chamber 10 enters the support part 13 and the like, the support part 13 and the like thermally expand. As a result, the distance from the base plate 12b to the electrode plate 16 changes. In addition, since the heat of the plasma enters the electrostatic chuck 20 and the electrode plate 16, the heat is transferred to the shaft body 130, and the shaft body 130 thermally expands. In contrast, for the gas introduction member 100b, the elastic porous body 140 elastically deforms to absorb the change in the distance from the base plate 12b to the electrode plate 16 and the elongation due to the thermal expansion of the shaft body 130, thereby preventing the shaft body 130 from being damaged or deformed. It should be noted that, with the help of the sealing component 16d between the upper end of the outer cylinder 110 and the lower surface of the electrode plate 16 and the sealing component (not shown) between the lower end of the outer cylinder 110 and the upper surface of the base plate 12b, the outer cylinder 110 can absorb the change in the distance from the base plate 12b to the electrode plate 16 and the elongation based on the thermal expansion of the outer cylinder 110.

[0066] It should be noted that in Figure 1 In the figure, the shaft 130 is set to be arranged on the side close to the base plate 12b, and the elastic porous body 140 is arranged on the side close to the electrode plate 16, but it is not limited to this. It is also possible to have a configuration in which the elastic porous body 140 is arranged on the side close to the base plate 12b, and the shaft 130 is arranged on the side close to the electrode plate 16. In addition, it is also possible to have a configuration in which one elastic porous body 140 is arranged on the side close to the base plate 12b, another elastic porous body 140 is arranged on the side close to the electrode plate 16, and the shaft 130 is arranged between one elastic porous body 140 and the other elastic porous body 140. In addition, it is also possible to have a configuration in which one shaft 130 is arranged on the side close to the base plate 12b, another shaft 130 is arranged on the side close to the electrode plate 16, and the elastic porous body 140 is arranged between one shaft 130 and the other shaft 130. That is, the core material 120 has at least one shaft 130 and at least one elastic porous body 140, and they are arranged in the axial direction of the outer cylinder 110.

[0067] As mentioned above, the embodiment of the substrate processing apparatus 1 is described, but the present invention is not limited to the above-mentioned embodiment, and various modifications and improvements can be made within the scope of the gist of the present invention described in the claims.

Claims

1. A substrate processing device, comprising: A first plate having a first gas introduction path; A second plate having a second gas introduction path; and A gas introduction component, which is disposed between the first plate and the second plate and connects the first gas introduction path and the second gas introduction path; The gas introduction component has: an outer cylinder connecting the first gas introduction path and the second gas introduction path; and The core material is arranged in the outer cylinder. The core material comprises a shaft body and an elastic porous body. The shaft body comprises a first shaft body and a second shaft body, The elastic porous body is arranged between the first shaft body and the second shaft body. A gap is formed between the inner peripheral surface of the outer cylindrical body and the outer peripheral surface of the first shaft body.

2. The substrate processing device according to claim 1, wherein: The gap is formed by a spiral groove formed on the outer peripheral surface of the shaft body and / or a spiral groove formed on a portion of the inner peripheral surface of the outer cylinder body corresponding to the outer peripheral surface of the shaft body.

3. The substrate processing apparatus according to claim 1, wherein: A high-frequency power source is included for applying high-frequency power to the second plate.

4. The substrate processing apparatus according to claim 1, wherein: The first plate is grounded.

5. The substrate processing device according to any one of claims 1 to 4, wherein: The Young's modulus of the elastic porous body is 1 MPa to 3 MPa.

6. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The elastic porous body is an elastic foam having interconnected cells.

7. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The elastic porous body is further arranged between the first shaft and the second plate.

8. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The elastic porous body is further arranged between the second shaft and the first plate.

9. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The elastic porous body further comprises: A first elastic porous body is disposed between the second shaft and the first plate; and The second elastic porous body is arranged between the first shaft body and the second plate.

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