Power semiconductor device

Abstract

The invention relates to a power semiconductor arrangement having a base body, at least one base being arranged on the base body, a power semiconductor component being arranged on the base, and the power semiconductor arrangement having a thermally conductive and electrically non-conductive heat conductor arranged on the base body and having an electrically conductive DC voltage busbar, wherein an electrically conductive busbar connection element, which is electrically conductively connected to the DC voltage busbar, extends from the DC voltage busbar in the direction of the base, wherein at least one thermally conductive element, which is thermally conductively connected to the DC voltage busbar, extends from the DC voltage busbar in the direction of the heat conductor, the power semiconductor arrangement being designed in such a way that the DC voltage busbar is pressed in the direction of the base body and thereby presses the busbar connection element against an electrically conductive conductor track of the base, as a result of which the busbar connection element is in electrically conductive pressure contact with the conductor track of the base, and also causes the thermally conductive element to be pressed against the heat conductor, so that the DC voltage busbar is thermally conductively connected to the base body via the thermally conductive element and the heat conductor.

Description

TECHNICAL FIELD

[0001] The invention relates to a power semiconductor arrangement having a base body, having at least one base arranged on the base body, and having a power semiconductor component which is arranged on the at least one base and is electrically conductively connected to the at least one base. BACKGROUND

[0002] DE 10 2016 112 77 A1 discloses a power semiconductor arrangement having a base, having a power semiconductor component which is arranged on the base and is electrically conductively connected to the base, having an electrically conductive DC voltage busbar and a capacitor, a capacitor terminal of which is electrically conductively connected to the DC voltage busbar. In order to mount the capacitor, the power semiconductor arrangement has a capacitor mounting device which has a receiving device for receiving the capacitor, the capacitor being arranged in the receiving device, wherein an electrically conductive busbar connection element which is electrically conductively connected to the busbar extends from the DC voltage busbar in the direction of the base, the electrically conductive busbar connection element pressing against electrically conductive conductor tracks of the base, such that the busbar connection element is in electrically conductive pressure contact with the conductor tracks of the base. The base is arranged on a heat sink, which cools the power semiconductor component via the base. A disadvantage of this arrangement is that the DC voltage busbar is not cooled by the heat sink or only to a small extent. SUMMARY

[0003] It is an object of the invention to create a power semiconductor arrangement whose DC voltage busbar is reliably cooled.

[0004] This object is achieved by a power semiconductor arrangement having a base body, having at least one base arranged on the base body, having a power semiconductor component which is arranged on the at least one base and is electrically conductively connected to the at least one base, and having an electrically conductive DC voltage busbar, wherein an electrically conductive busbar connection element which is electrically conductively connected to the busbar extends from the DC voltage busbar in the direction of the at least one base, wherein at least one thermally conductive element which is thermally conductively connected to the DC voltage busbar extends from the DC voltage busbar in the direction of a thermally conductive body arranged on the base body, the power semiconductor arrangement being designed such that the DC voltage busbar is pressed in the direction of the base body and, as a result, the busbar connection element is pressed against electrically conductive conductor tracks of the at least one base, with the result that the busbar connection element is in electrically conductive pressure contact with the conductor tracks of the at least one base, and also such that the at least one thermally conductive element is pressed against the thermally conductive body, such that the DC voltage busbar is thermally conductively coupled to the base body via the at least one thermally conductive element and the thermally conductive body.

[0005] It proves to be advantageous if the power semiconductor device comprises a capacitor which is electrically conductively connected to the DC voltage bus, wherein, for mounting the capacitor, the power semiconductor device has a capacitor mounting device which has a receiving device for receiving the capacitor, at least a portion of the capacitor being arranged in the receiving device, the power semiconductor device being designed in such a way that the capacitor mounting device presses the DC voltage bus in the direction of the base body and thereby presses the bus connection element against the electrically conductive conductor tracks of the at least one base, as a result of which the bus connection element is in electrically conductive pressure contact with the conductor tracks of the at least one base and also causes the at least one thermally conductive element to be pressed against the thermally conductive body, so that the DC voltage bus is thermally conductively connected to the base body via the at least one thermally conductive element and the thermally conductive body. The capacitor mounting device reliably presses the DC voltage bus in the direction of the base body.

[0006] In this connection, it proves to be advantageous if the power semiconductor device has a pressure generation means which exerts a pressure on the capacitor mounting device in the direction of the base body, thereby causing the capacitor mounting device to press the DC voltage bus in the direction of the base body. Thus, the pressure is generated in a simple manner by the power semiconductor device itself.

[0007] In this connection, it proves to be advantageous if the pressure generation means is formed as at least one screw. This makes it possible to design the pressure generation means in a particularly simple manner.

[0008] It proves to be advantageous if the thermally conductive body is designed as a thermally conductive pad or a ceramic plate. If the thermally conductive body is designed as a ceramic plate, the thermally conductive body can be designed in a particularly simple manner. If the thermally conductive body is formed as a thermally conductive pad, length changes of the thermally conductive element due to temperature changes can be compensated by the elastic properties of the thermally conductive pad, so that the thermally conductive element is very reliably thermally conductively coupled to the thermally conductive body in the event of temperature changes in the thermally conductive element.

[0009] Furthermore, it proves to be advantageous if the DC voltage bus has an electrically conductive positive potential rail and an electrically conductive negative potential rail, which are electrically insulated from one another by an electrically non-conductive insulation layer arranged between the positive potential rail and the negative potential rail. This results in a compact design of the DC voltage bus.

[0010] In this connection, it proves to be advantageous if the respective bus connection element is formed integrally with the positive potential rail or the negative potential rail. This results in a compact design of the power semiconductor device.

[0011] In addition, it proves to be advantageous if the respective thermally conductive element is formed integrally with the positive potential rail or the negative potential rail. This ensures a good thermally conductive coupling of the respective thermally conductive element to the DC voltage bus.

[0012] Furthermore, it proves advantageous if the power semiconductor arrangement has a plurality of heat-conducting elements, wherein a first group of the heat-conducting elements is formed integrally with the positive potential rail and a second group of the heat-conducting elements is formed integrally with the negative potential rail. This ensures a good thermally conductive coupling of the respective heat-conducting elements to the DC voltage busbar.

[0013] Furthermore, it proves advantageous if the at least one heat-conducting element is formed as a sheet metal element and comprises a first section which extends in the direction of the normal to the surface area of the base body and a second section which is curved relative to the first section and extends perpendicular to the direction of the normal to the surface area of the base body facing the heat conductor. This ensures a very good thermal coupling of the heat-conducting element to the base body.

[0014] Furthermore, it proves advantageous if the power semiconductor arrangement comprises a first base and a second base, the heat conductor being arranged between the first base and the second base in a direction perpendicular to the direction of the normal to the surface area of the base body facing the heat conductor. This leads to a symmetrical design of the power semiconductor arrangement.

[0015] Furthermore, it proves advantageous if the base body is an integral part of the heat sink or is designed as a base plate intended for arrangement on the heat sink. BRIEF DESCRIPTION OF DRAWINGS

[0016] The exemplary embodiments of the present application are described below with reference to the accompanying drawings listed below. In the drawings:

[0017] Figure 1 A sectional view showing the design of a power semiconductor arrangement according to the present application is shown. DETAILED DESCRIPTION

[0018] Figure 1 A sectional view showing the design of a power semiconductor arrangement 1 according to the present application is shown.

[0019] The power semiconductor arrangement 1 according to the present application has a base body 2a, at least one base 3, 3' arranged on the base body 2a, and a power semiconductor component 4 arranged on the at least one base 3, 3' and electrically conductively connected to the at least one base 3, 3'. The at least one base 3, 3' can be connected to the base body 2a in a material-bonded manner by means of a solder or sinter layer arranged between the base body 2a and the at least one base 3, 3'. Alternatively, a thermally conductive paste can be arranged between the at least one base 3 and the base body 2a. The power semiconductor component 4 is preferably electrically conductively connected to the at least one base 3, 3' by means of a solder or sinter layer arranged between the power semiconductor component 4 and the at least one base 3, 3'. In the exemplary embodiment, the power semiconductor arrangement 1 has a first base 3 and a second base 3'.

[0020] For example, the base body 2a can be an integral part of the heat sink 2, as in the exemplary embodiment. The heat sink 2 can have cooling fins 2b or cooling pins, which are preferably extended away from the base body 2a of the heat sink 2. The heat sink 2 can be implemented as an air heat sink or a water heat sink. Alternatively, the base body 2a can also be designed as a base plate (without cooling fins 2b or cooling pins), which is intended to be arranged on a heat sink (for example, an air heat sink or a water heat sink). The base body 2a is preferably composed of metal.

[0021] The substrate 3 comprises an insulator 3a (for example, a ceramic body) and an electrically conductive, structured first conductor layer 3b, which is arranged on a main side of the insulator 3a and is connected to the insulator 3a, which, due to its structure, forms electrically conductive conductor tracks 3b'. The substrate 3 preferably is composed of an electrically conductive, preferably unstructured second conductor layer 3c, between which the insulator 3a is arranged. The substrate 3 can be implemented, for example, in the form of a direct copper bonding substrate (DCB substrate), an active metal brazing substrate (AMB substrate) or an insulated metal substrate (IMS).

[0022] The power semiconductor switch 4 is preferably in the form of a transistor, such as an IGBT (insulated gate bipolar transistor) or a MOSFET (metal oxide semiconductor field effect transistor) or in the form of a thyristor.

[0023] The power semiconductor device 1 further comprises an electrically non-conductive heat conductor 9, which is arranged on the base body 2a. The heat conductor 9 is preferably connected to the base body 2a by means of an adhesive layer arranged between the heat conductor 9 and the base body 2a. The heat conductor 9 is preferably designed as a heat-conducting pad or a ceramic plate. Heat-conducting pads are also referred to as gap pads. The heat-conducting pad preferably comprises an elastic polymer material, such as silicone or silicone rubber, and preferably comprises a heat-conducting filler material, such as ceramic particles.

[0024] The power semiconductor device 1 further comprises an electrically conductive DC voltage bus 5, wherein electrically conductive bus connection elements 5a' and 5b', which are electrically conductively connected to the DC voltage bus 5, extend from the DC voltage bus 5 in the direction of the at least one substrate 3 or 3'. The DC voltage bus 5 has an electrically conductive positive potential rail 5a and an electrically conductive negative potential rail 5b, which are electrically insulated from one another by means of an electrically non-conductive insulating layer 5c (for example, a plastic film) arranged between the positive potential rail 5a and the negative potential rail 5b.

[0025] The electrically conductive busbar connection elements 5a' and 5b', which are electrically conductively connected to the DC voltage busbar 5, extend from the DC voltage busbar 5 in the direction of the at least one substrate 3, 3'. The respective busbar connection element 5a' or 5b' is preferably designed to be integral with the positive potential rail 5a or the negative potential rail 5b.

[0026] In addition, the at least one thermally conductive thermally conductive element 7, 7', which is thermally conductively connected to the DC voltage busbar 5, extends from the DC voltage busbar 5 in the direction of the heat conductor 9. In the simplest case, the at least one thermally conductive element 7, 7' can be thermally conductively connected to the DC voltage busbar 5 by mechanical contact of the at least one thermally conductive element 7, 7' with the DC voltage busbar 5. The at least one thermally conductive element 7, 7' is preferably made of metal. Figure 1 Two thermally conductive elements 7 and 7' are shown. As in the exemplary embodiment, the respective thermally conductive element 7 or 7' is preferably formed integrally with the positive potential rail 5a or the negative potential rail 5b. The power semiconductor device 1 preferably comprises a plurality of thermally conductive elements 7, 7', wherein a first group of the thermally conductive elements 7 is formed integrally with the positive potential rail 5a and a second group of the thermally conductive elements 7' is formed integrally with the negative potential rail 5b.

[0027] The at least one thermally conductive element 7, 7' is preferably formed as a sheet metal element and comprises a first section 7a, 7a' which extends in the normal direction N of the surface region 2c of the base body 2a facing the heat conductor 9 and a second section 7b, 7b' which is curved relative to the first section 7a, 7a' and extends perpendicular to the normal direction N of the surface region 2c of the base body 2a facing the heat conductor 9. The second section 7b, 7b' is in mechanical contact with the heat conductor 9.

[0028] The power semiconductor device 1 is designed such that the DC voltage busbar 5 is pressed in the direction of the base body 2a and thereby presses the busbar connection elements 5a', 5b' against the electrically conductive conductor tracks 3b' of the at least one substrate 3, 3', as a result of which the busbar connection elements 5a', 5b' are in electrically conductive pressure contact with these conductor tracks 3b' of the at least one substrate 3, 3', and also causes the at least one thermally conductive element 7, 7' to be pressed against the heat conductor 9, so that the DC voltage busbar 5 is thermally conductively coupled to the base body 2a via the at least one thermally conductive element 7, 7' and the heat conductor 9.

[0029] This results in the DC voltage busbar 5 being cooled by the base body 2a, which removes heat from the DC voltage busbar 5 via the heat conductor 9 and the at least one thermally conductive element 7, 7'. Thus, in the present application, both the power semiconductor component 4 and the DC voltage busbar 5 are cooled by means of the base body 2a.

[0030] In an exemplary embodiment, the power semiconductor arrangement 1 comprises capacitors 6 which are electrically conductively connected to the DC voltage bus 5. A first capacitor terminal 6c of the respective capacitor 6 is electrically conductively connected to the positive potential rail 5a and a second capacitor terminal 6d of the respective capacitor 6 is electrically conductively connected to the negative potential rail 5b, for example by means of a soldering, sintering or welding connection. The power semiconductor arrangement 1 has capacitor mounting means 8 for mounting the capacitors 6, which are preferably receiving means 8a having a cup shape for receiving the capacitors 6, at least a portion of the respective capacitor 6 being arranged in the respective receiving means 8a. It should be noted that the capacitor mounting means 8 can also have only a single receiving means 8a in which the capacitor 6 is arranged. The capacitor mounting means 8 are preferably made of plastic, in particular as a plastic injection-molded part.

[0031] The power semiconductor arrangement 1 is preferably designed such that the capacitor mounting means 8 press against the DC voltage bus 5 in the direction of the base body 2a and thereby press the bus connection elements 5a', 5b' against the conductor tracks 3b' of the at least one base 3, 3', as a result of which the bus connection elements 5a', 5b' are in electrically conductive pressure contact with the conductor tracks 3b' of the at least one base 3, 3', and also cause the at least one thermally conductive element 7, 7' to be pressed against the thermally conductive body 9, such that the DC voltage bus 5 is thermally coupled to the base body 2a via the at least one thermally conductive element 7, 7' and the thermally conductive body 9.

[0032] The elastically deformable element 11, which is made of, for example, silicone or silicone rubber, is preferably arranged between the capacitor mounting means 8 and the DC voltage bus 5.

[0033] The power semiconductor components 4 are preferably electrically connected to one another to form a half-bridge circuit, which can be used, for example, for rectifying and inverting voltages and currents. The power semiconductor arrangement 1 preferably comprises the capacitors 6 as electrical energy storage units which buffer DC voltages occurring on the power semiconductor arrangement 1. The capacitors 6 are therefore preferably used as DC link capacitors, but they can also be used for different purposes.

[0034] The power semiconductor arrangement 1 preferably has a pressure-generating device 10 which exerts a pressure on the capacitor mounting means 8 in the direction of the base body 2a, resulting in the capacitor mounting means 8 pressing against the DC voltage bus 5 in the direction of the base body 2a, which results in the bus connection elements 5a', 5b' being pressed against the conductor tracks 3b' of the at least one base 3, 3', as a result of which the bus connection elements 5a', 5b' are in electrically conductive pressure contact with the conductor tracks 3b' of the at least one base 3, 3', and also cause the at least one thermally conductive element 7, 7' to be pressed against the thermally conductive body 9, such that the DC voltage bus 5 is thermally coupled to the base body 2a via the at least one thermally conductive element 7, 7' and the thermally conductive body 9. Figure 1The pressure-generating means 10 is preferably formed as at least one screw. As part of the exemplary embodiment, the capacitor mounting device 8 is screwed directly to the base body 2a by means of the at least one screw 10. However, the capacitor mounting device 8 can also be screwed indirectly to the base body 2a, for example by means of the at least one screw 10, via at least one mechanically inserted element. If the base body 2a is designed as a substrate arranged on a heat sink, the capacitor mounting device 8 can be screwed directly or indirectly to the heat sink by means of the at least one screw 10.

[0035] Of course, features mentioned in singular can also exist in more than one, unless inherently excluded. It is particularly noted that the power semiconductor device according to the application can of course also comprise more than one heat-conducting body 9 arranged on the base body 2a, wherein at least one heat-conducting heat-conducting element 7, 7' extends in the direction of the more than one heat-conducting body 9. If more than one base 3, 3' is present on the base body 2a, the bases 3, 3' can be arranged alternately with the heat-conducting bodies 9 in a direction perpendicular to the normal direction N of the surface area 2c of the base body 2a facing the heat-conducting bodies 9.

Claims

1. A power semiconductor arrangement having a base body (2a), having at least one base (3, 3') arranged on the base body (2a), having a power semiconductor component (4) arranged on the at least one base (3, 3') and electrically conductively connected to the at least one base (3, 3'), and having a thermally conductive and electrically non-conductive heat conductor (9) arranged on the base body (2a) and having an electrically conductive DC voltage busbar (5), wherein, An electrically conductive busbar connection element (5a', 5b') which is electrically conductively connected to the DC voltage busbar (5) extends from the DC voltage busbar (5) in the direction of the at least one base (3, 3'), wherein at least one thermally conductive element (7, 7') which is thermally conductively connected to the DC voltage busbar (5) extends from the DC voltage busbar (5) in the direction of the thermally conductive body (9), wherein the power semiconductor arrangement (1) is designed in such a way that the DC voltage busbar (5) is pressed in the direction of the base body (2a) and thereby presses the busbar connection element (5a', 5b') against the electrically conductive conductor tracks (3b') of the at least one base (3, 3'), as a result of which the busbar connection element (5a', 5b') is in electrically conductive pressure contact with the electrically conductive conductor tracks (3b') of the at least one base (3, 3') and also causes the at least one thermally conductive element (7, 7') to be pressed against the thermally conductive body (9) in such a way that the DC voltage busbar (5) is thermally conductively connected to the base body (2a) via the at least one thermally conductive element (7, 7') and the thermally conductive body (9), wherein the DC voltage busbar (5) has an electrically conductive positive potential rail (5a) and an electrically conductive negative potential rail (5b), which are electrically insulated from one another by means of an electrically non-conductive insulation layer (5c) arranged between the positive potential rail (5a) and the negative potential rail (5b), and the power semiconductor arrangement (1) has a plurality of thermally conductive elements (7, 7'), wherein a first group of the thermally conductive elements (7) is formed integrally with the positive potential rail (5a) and a second group of the thermally conductive elements (7') is formed integrally with the negative potential rail (5b).

2. The power semiconductor device according to claim 1, characterized in that, The power semiconductor device (1) comprises a capacitor (6) which is conductively connected to the DC voltage busbar (5), wherein, for mounting the capacitor (6), the power semiconductor device (1) has a capacitor mounting device (8) which has a receiving device (8a) for receiving the capacitor (6), at least a portion of the capacitor (6) being arranged in the receiving device (8a), the power semiconductor device (1) being designed in such a way that the capacitor mounting device (8) presses the DC voltage busbar (5) against the base body (2a) and thereby presses the busbar connection elements (5a', 5b') against the electrically conductive conductor tracks (3b') of the at least one base (3, 3'), as a result of which the busbar connection elements (5a', 5b') are in electrically conductive pressure contact with these electrically conductive conductor tracks (3b') of the at least one base (3, 3') and also cause the at least one thermally conductive element (7, 7') to be pressed against the thermally conductive body (9) in such a way that the DC voltage busbar (5) is thermally conductively connected to the base body (2a) via the at least one thermally conductive element (7, 7') and the thermally conductive body (9).

3. The power semiconductor device according to claim 2, characterized in that, The power semiconductor device has a pressure-generating means (10) which exerts a pressure on the capacitor mounting device (8) in the direction of the base body (2a), thereby causing the capacitor mounting device (8) to press the DC voltage busbar (5) in the direction of the base body (2a).

4. The power semiconductor device according to claim 3, characterized in that, The pressure-generating means (10) is formed as at least one screw.

5. The power semiconductor device according to any one of claims 1 to 4, characterized in that The thermally conductive body (9) is formed as a thermally conductive pad or a ceramic plate.

6. The power semiconductor device according to claim 1, characterized in that, The respective busbar connection element (5a', 5b') is formed integrally with the positive potential rail (5a) or the negative potential rail (5b).

7. The power semiconductor device according to any one of claims 1 to 4, characterized in that, The at least one thermally conductive element (7, 7') is formed as a sheet metal element and comprises a first section (7a, 7a') which extends in the normal direction (N) of the surface area (2c) of the base body (2a) facing the thermally conductive body (9) and a second section (7b, 7b') which is bent relative to the first section (7a, 7a') and extends perpendicular to the normal direction (N) of the surface area (2c) of the base body (2a) facing the thermally conductive body (9).

8. The power semiconductor device according to any one of claims 1 to 4, characterized in that, The power semiconductor device (1) has a first base and a second base, the thermally conductive body (9) being arranged between the first base and the second base in a direction perpendicular to the normal direction (N) of the surface area (2c) of the base body (2a) facing the thermally conductive body (9).

9. The power semiconductor device according to any one of claims 1-4, characterized in that, The base body (2a) is an integral part of a heat sink (2) or is designed as a base plate intended for arrangement on a heat sink.

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