Active temperature control packaging method for high-power integrated circuit semiconductor or module

Abstract

The present invention provides an active cooling design packaging method for high-power integrated circuit semiconductors or modules. By placing a high-power wafer with high heat generation on a composite packaging shell or frame with high thermal conductivity, the composite packaging shell or frame contains a semiconductor cooling sheet. This method can reduce the operating temperature of the high-power semiconductor integrated circuit or module and improve the reliability of the product.

Description

Technical Field

[0001] The invention belongs to the field of integrated circuit semiconductor packaging, and is an active temperature regulating packaging method for a high-power integrated circuit semiconductor or module. Background Art

[0002] At present, traditional power semiconductor or module packaging, such as rectifier bridge, IGBT module, etc., uses a single metal shell as a heat sink or bracket for heat dissipation. Due to the limitations of the finished product volume and the specific heat capacity of the metal, the PD dissipation power of the finished package itself cannot be maximized. For some high-power and high-heat wafers, their electrical performance cannot be fully utilized due to the limitation of the package dissipation power. They can only be used at a reduced rating or with a larger heat sink or even a cooling fan, which wastes the wafers and increases the cost of use. It also increases the product volume and reduces the product performance. In addition, the introduction of the cooling fan reduces the reliable service life of the product. At the same time, in some high or low temperature environments, the ambient temperature exceeds the working range of the wafer, resulting in the product being unable to work reliably. Summary of the invention

[0003] In view of the defects in the existing packaging, an active temperature control packaging method for a high-power integrated circuit semiconductor or module is provided, by which the active temperature control capability of the product packaging shell can be increased, the product performance and reliability can be improved, and the product life can be extended.

[0004] In a first aspect, an active temperature control packaging method for a high-power integrated circuit semiconductor or module is provided, wherein a high-power wafer with high heat generation is placed on a composite packaging shell or frame with high thermal conductivity, wherein the composite packaging shell or frame contains a semiconductor cooling sheet.

[0005] Preferably, two electrodes of the semiconductor cooling sheet are led out to form two active temperature control pins of the packaged finished product.

[0006] Preferably, by applying voltages of different polarities to the active temperature control pin and controlling the input of different input voltages or currents, the temperature of the product can be regulated by using semiconductor cooling and heating.

[0007] Secondly, the composite packaging shell is in a fully wrapped or partially wrapped form relative to the finished product, and the exterior of the packaging shell is a shell made of a material with high heat dissipation and high thermal conductivity.

[0008] Preferably, the packaging shell can first fix the wafer and the packaging frame, and then fix the packaging frame with the wafer fixed on the semiconductor cooling chip.

[0009] Preferably, the packaging shell can also be made directly of semiconductor refrigeration chip, and the outside of the semiconductor refrigeration chip is locally metallized to form a frame for fixing the wafer and the connecting circuits between the components in the module, and then the wafer is directly fixed on the wafer fixing frame of the semiconductor refrigeration chip.

[0010] Preferably, the other non-wafer fixed end side of the semiconductor cooling plate can directly constitute the outermost layer of the package, and can also be combined with a metal frame. The metal frame is used as the outermost layer to enhance the heating capacity and the strength of the package structure.

[0011] Thirdly, because the semiconductor refrigeration chip is also a temperature difference power generation chip, the temperature difference power generation is formed at both ends of the semiconductor refrigeration chip when the product is working, and the temperature adjustment pin is changed to output voltage instead of input voltage, so that other external loads can be powered. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 Example of an active temperature control packaging method for high power integrated circuit semiconductors or modules

[0013] Note: 1. Semiconductor Refrigeration Chip 2. Wafer

[0014] 3. Semiconductor refrigeration electrode 4. Semiconductor refrigeration electrode

[0015] 5. Metal frame (added as needed, not required in some cases) DETAILED DESCRIPTION

[0016] The embodiments of the technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and are therefore only used as examples, and the protection scope of the present invention cannot be limited thereto. It should be noted that, unless otherwise specified, the technical terms or scientific terms used in this application should be the common meanings understood by those skilled in the art to which the present invention belongs.

[0017] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0018] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0019] As used in this specification and the appended claims, the term "if" may be interpreted as "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined" or "if [described condition or event] is detected" may be interpreted as meaning "upon determination" or "in response to determining" or "upon detection of [described condition or event]" or "in response to detecting [described condition or event]," depending on the context.

[0020] Example:

[0021] See also Figure 1 : Description of the drawings:

[0023] Figure 1 Example of an active temperature control packaging method for high power integrated circuit semiconductors or modules

[0024] Note: 1. Semiconductor Refrigeration Chip 2. Wafer

[0025] 3. Semiconductor refrigeration electrode 4. Semiconductor refrigeration electrode

[0026] 5. Metal frame (added as needed, not required in some cases)

[0027] In a first aspect, an active temperature control packaging method for a high-power integrated circuit semiconductor or module is provided, wherein a high-power wafer with high heat generation is placed on a composite packaging shell or frame with high thermal conductivity, wherein the composite packaging shell or frame contains a semiconductor cooling sheet.

[0028] Preferably, two electrodes of the semiconductor cooling sheet are led out to form two active temperature control pins of the packaged finished product.

[0029] Preferably, by applying voltages of different polarities to the active temperature control pin and controlling the input of different input voltages or currents, the temperature of the product can be regulated by using semiconductor cooling and heating.

[0030] Secondly, the composite packaging shell is in a fully wrapped or partially wrapped form relative to the finished product, and the exterior of the packaging shell is a shell made of a material with high heat dissipation and high thermal conductivity.

[0031] Preferably, the packaging shell can first fix the wafer and the packaging frame, and then fix the packaging frame with the wafer fixed on the semiconductor cooling chip.

[0032] Preferably, the packaging shell can also be made directly of semiconductor refrigeration chip, and the outside of the semiconductor refrigeration chip is locally metallized to form a frame for fixing the wafer and the connecting circuits between the components in the module, and then the wafer is directly fixed on the wafer fixing frame of the semiconductor refrigeration chip.

[0033] Preferably, the other non-wafer fixed end side of the semiconductor cooling plate can directly constitute the outermost layer of the package, and can also be combined with a metal frame. The metal frame is used as the outermost layer to enhance the heating capacity and the strength of the package structure.

[0034] Thirdly, because the semiconductor refrigeration chip is also a temperature difference power generation chip, the temperature difference power generation is formed at both ends of the semiconductor refrigeration chip when the product is working, and the temperature adjustment pin is changed to output voltage instead of input voltage, so that other external loads can be powered.

[0035] The method provided in the embodiment of the present invention is briefly described. For matters not mentioned in the embodiment part, reference can be made to the corresponding contents in the aforementioned product embodiment.

[0036] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. These modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention, and they should all be included in the scope of the claims and specification of the present invention.

Claims

1. An active temperature control packaging method for a high-power integrated circuit module, characterized in that: The wafer is placed on a composite packaging shell with high thermal conductivity, and the composite packaging shell contains a semiconductor cooling chip; The two electrodes of the semiconductor cooling chip are led out to form two active temperature control pins of the packaged finished product; By adding voltages of different polarities to the active temperature control pin and controlling the input of different input voltages or currents, the temperature of the product can be adjusted by using semiconductor cooling and heating. The composite packaging shell is directly made of a semiconductor cooling chip, and the exterior of the semiconductor cooling chip is partially metallized to form a frame for fixing the wafer and a connection circuit between various components in the module, and then the wafer is directly fixed on the wafer fixing frame of the semiconductor cooling chip; The other non-wafer fixed end side of the semiconductor cooling sheet directly constitutes the outermost layer of the package, or is compounded with the metal frame, with the metal frame serving as the outermost layer, thereby enhancing the heating capacity and the strength of the package structure.

2. An active cooling design packaging method for a high-power integrated circuit module, characterized in that: The composite encapsulation shell is a fully encapsulated or partially encapsulated form relative to the finished product, and the outside of the encapsulation shell is a material shell with high heat dissipation and high thermal conductivity; The composite encapsulation shell contains a semiconductor cooling chip; The two electrodes of the semiconductor cooling chip are led out to form two active temperature control pins of the packaged finished product; By adding voltages of different polarities to the active temperature control pin and controlling the input of different input voltages or currents, the temperature of the product can be adjusted by using semiconductor cooling and heating. The composite packaging shell is directly made of a semiconductor cooling chip, and the exterior of the semiconductor cooling chip is partially metallized to form a frame for fixing the wafer and a connection circuit between various components in the module, and then the wafer is directly fixed on the wafer fixing frame of the semiconductor cooling chip; The other non-wafer fixed end side of the semiconductor cooling sheet directly constitutes the outermost layer of the package, or is compounded with the metal frame, with the metal frame serving as the outermost layer, thereby enhancing the heating capacity and the strength of the package structure.

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