Semiconductor device and method for manufacturing semiconductor device

Abstract

The object is to provide a technology that can improve the heat dissipation of a semiconductor device while maintaining the processability of the product. The semiconductor device (100) comprises: a power chip (2a to 2f); a control chip (1a, 1b) that controls the power chip; a power side terminal (6) that is connected to the power chip; a control side terminal (5) that is connected to the control chip; and a molding resin (8) that covers the power chip, the control chip, one end of the power side terminal, and one end of the control side terminal. The other end of the power side terminal and the other end of the control side terminal protrude horizontally from the side of the molding resin (8) and are bent downward in the middle. A heat dissipation portion (10) that protrudes from the portion bent downward toward or away from the molding resin (8) is formed only on the other end of the power side terminal of the power side terminal and the control side terminal.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Background Art

[0002] The semiconductor device has: a power chip arranged on a lead frame; a control chip that controls the power chip; a molding resin that covers the power chip and the control chip; and a terminal that protrudes from the molding resin and is connected to a substrate on which the semiconductor device is mounted. Due to the heat generated by the power chip, the heat is transferred to the substrate via the terminal, and the temperature rise of the substrate becomes a problem.

[0003] Generally, the cross section of the terminal is rectangular, and for example, Patent Document 1 discloses a structure in which convex portions are provided on both side edges of the lead for forming the mounting terminal exposed from the molded package. Thus, the heat transferred from the mounting terminal to the molded package can be dissipated, thereby suppressing the thermal shock to the built-in electronic components in the molded package.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2006-80180

[0005] However, in the technology described in Patent Document 1, convex portions are provided on both the power-side terminal connected to the power chip and the control-side terminal connected to the control chip. Since the number of terminals, terminal pitch, and terminal width on both sides are different, deterioration of processability becomes a problem, especially at the control-side terminal with a small terminal width. Summary of the invention

[0006] Therefore, an object of the present invention is to provide a technology capable of improving the heat dissipation performance of a semiconductor device while maintaining the processability of a product.

[0007] The semiconductor device involved in the present invention comprises: a power chip; a control chip, which controls the power chip; a power side terminal, which is connected to the power chip; a control side terminal, which is connected to the control chip; and a molding resin, which covers the power chip, the control chip, one end of the power side terminal and one end of the control side terminal, the other end of the power side terminal and the other end of the control side terminal protrude horizontally from the side of the molding resin and bend downward in the middle, and only the other end of the power side terminal among the power side terminal and the control side terminal is formed with a heat dissipation portion protruding from the downward bent portion toward a direction approaching or away from the molding resin.

[0008] Effects of the Invention

[0009] According to the present invention, it is possible to improve the heat dissipation performance of a semiconductor device while maintaining the processability of a product. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a diagram showing the internal structure of the semiconductor device according to the first embodiment.

[0011] Figure 2 This is a side view showing a state where the semiconductor device is turned upside down.

[0012] Figure 3 It is a circuit diagram of a semiconductor device.

[0013] Figure 4 This is an enlarged oblique view of the power-side terminal and its surroundings.

[0014] Figure 5 The invention shows a method for manufacturing a power-side terminal and is an enlarged perspective view of the power-side terminal and its surroundings.

[0015] Figure 6 The invention shows a method for manufacturing a control-side terminal and is an enlarged perspective view of the control-side terminal and its surroundings.

[0016] Figure 7 This is an enlarged front view of a power-side terminal included in the semiconductor device according to the second embodiment and its surroundings.

[0017] Figure 8 This is an enlarged front view of a power-side terminal and its surroundings included in the semiconductor device according to the third embodiment. DETAILED DESCRIPTION

[0018] <Implementation Method 1>

[0019] Next, Embodiment 1 will be described with reference to the drawings. Figure 1 It is a diagram showing the internal structure of the semiconductor device 100 according to the first embodiment. Figure 2 It is a side view showing a state where the semiconductor device 100 is turned upside down. Figure 3 is a circuit diagram of the semiconductor device 100 .

[0020] like Figure 1 As shown, the semiconductor device 100 includes an insulating sheet 3 , lead frames 4 a to 4 f , power chips 2 a to 2 f , control chips 1 a and 1 b , and a molding resin 8 .

[0021] The insulating sheet 3 is a sheet formed by a metal foil or a metal plate and an insulating resin in close contact, and is formed of a material with excellent insulation and thermal conductivity. Lead frames 4c to 4f are arranged on the upper surface of the insulating sheet 3. The power chips 2a to 2c are mounted on the upper surface of the lead frame 4c. The power chips 2a to 2c are high-voltage power chips to which a high voltage is applied. The power chips 2d to 2f are respectively mounted on the upper surfaces of the lead frames 4d to 4f. The power chips 2d to 2f are low-voltage power chips to which a voltage lower than that of the high-voltage power chips is applied.

[0022] Lead frames 4a and 4b are arranged outside the insulating sheet 3. Control chips 1a and 1b are mounted on the upper surfaces of lead frames 4a and 4b, respectively. Control chip 1a is a so-called HVIC (High Voltage Integrated Circuit) that controls power chips 2a to 2c on the high voltage side. Control chip 1b is a so-called LVIC (Low Voltage Integrated Circuit) that controls power chips 2d to 2f on the low voltage side.

[0023] like Figure 1 and Figure 3 As shown, each power chip 2a to 2f has an IGBT (Insulated Gate Bipolar Transistor) and a FWD (Free Wheeling Diode). The control chip 1a and the power chips 2a to 2c, the control chip 1b and the power chips 2d to 2f, and the IGBT and the FWD are connected by wires.

[0024] Lead frames 4a and 4b form a part of control-side terminal 5 connected to control chips 1a and 1b, respectively, and are connected to the remaining part of control-side terminal 5. Lead frames 4c to 4f form a part of power-side terminal 6 connected to power chips 2a to 2f, and are connected to the remaining part of power-side terminal 6. Power-side terminal 6 has output terminals, positive terminals, and negative terminals for multiple phases.

[0025] The mold resin 8 covers the power chips 2a to 2f, the control chips 1a and 1b, one end of the power-side terminal 6, and one end of the control-side terminal 5. Figure 1 and Figure 2 As shown, the other ends of the power terminal 6 and the control terminal 5 are exposed from the mold resin 8. A semiconductor device in which the mold resin 8 also serves as the insulating sheet 3 is called a full mold type. A full mold type semiconductor device does not have the insulating sheet 3.

[0026] Next, use Figure 4 The structure of the power-side terminal 6 which is a feature of the first embodiment will be described. Figure 4 It is an enlarged perspective view of the power-side terminal 6 and its surroundings.

[0027] like Figure 4 As shown, the other end side of the power side terminal 6 is in a shape that protrudes horizontally from the side of the molded resin 8 and bends downward in the middle. That is, the other end side of the power side terminal 6 is L-shaped in the front view. In addition, although not shown, the other end side of the control side terminal 5 is also in a shape that protrudes horizontally from the side of the molded resin 8 and bends downward in the middle. That is, the other end side of the control side terminal 5 is L-shaped in the front view.

[0028] In order to maintain the processability of the product and improve the heat dissipation, a pair of heat dissipation portions 10 are formed only on the other end side of the power side terminal 6 of the power side terminal 6 and the control side terminal 5. The pair of heat dissipation portions 10 are rectangular in the front view and are formed on the upper part of the downwardly bent portion of the other end side of the power side terminal 6. In addition, the pair of heat dissipation portions 10 protrude from both ends in the width direction of the downwardly bent portion of the other end side of the power side terminal 6 in the width direction of the molded resin 8, that is, in a direction away from the molded resin 8.

[0029] In addition, the pair of heat dissipation portions 10 may not protrude in the direction away from the mold resin 8, but may protrude in the direction close to the mold resin 8. In addition, the pair of heat dissipation portions 10 may be formed only on the other end side of the positive terminal or the other end side of the negative terminal of the power-side terminal 6, where a temperature rise is particularly concerned when a device operated by three-phase AC power is connected to the semiconductor device 100.

[0030] Next, use Figure 5 (a) to (c) describe a method for manufacturing the power-side terminal 6. Figure 5 (a) to (c) illustrate a method for manufacturing the power-side terminal 6 and are enlarged perspective views of the power-side terminal 6 and its surroundings.

[0031] like Figure 5 As shown in (a), the other end side of the power side terminal 6 is formed to have a protrusion 10a, which extends in the horizontal direction and protrudes in the width direction from both ends in the width direction of the power side terminal 6. First, the mold resin 8 is formed in a manner covering the power chips 2a to 2f, the control chips 1a and 1b, one end side of the power side terminal 6, and one end side of the control side terminal 5.

[0032] Next, if Figure 5 As shown in (b), after the mold resin 8 is formed, the heat dissipation portion 10 is formed by bending the protruding portion 10a of the power-side terminal 6 upward or downward. Figure 5As shown in (c), the other end of the power-side terminal 6 is bent downward in the middle, so that the other end of the power-side terminal 6 is L-shaped in a front view.

[0033] Next, use Figure 6 (a) and (b) illustrate a method for manufacturing the control-side terminal 5. Figure 6 (a) and (b) illustrate a method for manufacturing the control-side terminal 5 and are enlarged perspective views of the control-side terminal 5 and its surroundings.

[0034] The control-side terminal 5 is manufactured by the same process as the power-side terminal 6. That is, Figure 6 The process shown in (a) is Figure 5 (a) is performed by the process shown in Figure 6 The process shown in (b) is carried out by Figure 5 (c) is performed by the process shown in FIG.

[0035] As described above, the semiconductor device 100 involved in embodiment 1 has: power chips 2a~2f; control chips 1a, 1b, which control the power chips 2a~2f; power side terminals 6, which are connected to the power chips 2a~2f; control side terminals 5, which are connected to the control chips 1a, 1b; and molding resin 8, which covers the power chips 2a~2f, the control chips 1a, 1b, one end side of the power side terminal 6 and one end side of the control side terminal 5, the other end side of the power side terminal 6 and the other end side of the control side terminal 5 protrude from the side of the molding resin 8 in a horizontal direction and are bent downward in the middle part, and only on the other end side of the power side terminal 6 of the power side terminal 6 and the control side terminal 5 is a heat dissipation portion 10 protruding from the downward bent part toward or away from the molding resin 8.

[0036] In addition, the other end side of the power side terminal 6 has a protruding portion 10a protruding in the width direction from both ends in the width direction of the power side terminal 6. The manufacturing method of the semiconductor device 100 includes the following steps: step (a) of forming the heat dissipation portion 10 by bending the protruding portion 10a of the power side terminal 6 after forming the molding resin 8; and step (b) of bending the middle portion of the other end side of the power side terminal 6.

[0037] Since the heat dissipation portion 10 is formed only on the other end side of the power-side terminal 6 of the power-side terminal 6 and the control-side terminal 5, it is possible to improve the heat dissipation of the semiconductor device 100. In particular, since the heat dissipation portion 10 is not formed on the control-side terminal 5 having a small terminal width, it is possible to maintain the processability of the product of the semiconductor device 100.

[0038] The power-side terminal 6 includes a positive terminal and a negative terminal, and the heat dissipation portion 10 is formed on the other end side of the positive terminal or the other end side of the negative terminal. When a device operated by three-phase AC power is connected to the semiconductor device 100, the heat dissipation portion 10 is formed only on the other end side of the positive terminal or the other end side of the negative terminal where a temperature rise is particularly concerned, thereby further taking into account both maintaining the processability of the product and improving the heat dissipation of the semiconductor device 100.

[0039] <Implementation Method 2>

[0040] Next, a semiconductor device 100 according to the second embodiment will be described. Figure 7 It is an enlarged front view of the power-side terminal 6 and its surroundings included in the semiconductor device 100 according to the second embodiment. In the second embodiment, the same components as those described in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

[0041] like Figure 7 As shown, in the second embodiment, in order to increase the surface area of ​​a pair of heat dissipating parts 10, three through holes 11 are formed in each heat dissipating part 10. The three through holes 11 are formed side by side in the vertical direction so as to penetrate each heat dissipating part 10 in the thickness direction. The three through holes 11 are formed when the power side terminal 6 is manufactured.

[0042] In addition, Figure 7 In the embodiment, the pair of heat dissipation portions 10 protrude toward the mold resin 8, but may be formed to protrude toward the direction away from the mold resin 8. In addition, the number of through holes 11 is not limited to three, and may be one or more.

[0043] As described above, in the semiconductor device 100 according to the second embodiment, the through hole 11 is formed in the heat dissipation portion 10. Therefore, the surface area of ​​the heat dissipation portion 10 increases, so that the heat dissipation property of the semiconductor device 100 is further improved.

[0044] <Implementation Method 3>

[0045] Next, a semiconductor device 100 according to a third embodiment will be described. Figure 8 It is an enlarged front view of the power-side terminal 6 and its surroundings included in the semiconductor device 100 according to the third embodiment. In the third embodiment, the same components as those described in the first and second embodiments are denoted by the same reference numerals, and the description thereof is omitted.

[0046] like Figure 8As shown, in Embodiment 3, each heat dissipation portion 10 is formed at the front end portion of the other end side of the power side terminal 6. Specifically, each heat dissipation portion 10 is formed from the lower end of the downwardly bent portion of the power side terminal 6 to a portion other than the upper end portion. In order to improve the insertability of the power side terminal 6 when the semiconductor device 100 is mounted on the substrate, the front end portion (lower end portion) of each heat dissipation portion 10 is formed in a tapered shape. This tapered shape is formed when the power side terminal 6 is manufactured.

[0047] In addition, Figure 8 In the embodiment, the pair of heat dissipating portions 10 protrude in a direction approaching the mold resin 8 , but may be formed so as to protrude in a direction away from the mold resin 8 .

[0048] As described above, in the semiconductor device 100 according to the third embodiment, the heat dissipation portion 10 is formed at the tip of the other end of the power-side terminal 6, and the tip of the heat dissipation portion 10 is tapered. Therefore, when the semiconductor device 100 is mounted on a substrate, the insertability of the power-side terminal 6 is improved.

[0049] Furthermore, the various embodiments can be freely combined, or the various embodiments can be appropriately modified or omitted.

[0050] Description of the label

[0051] 1a, 1b control chips, 2a to 2f power chips, 5 control side terminals, 6 power side terminals, 8 molding resin, 10 heat dissipation portion, 10a protruding portion, 11 through hole, 100 semiconductor device.

Claims

1. A semiconductor device comprising: Power chip; A control chip, which controls the power chip; A power side terminal connected to the power chip; a control-side terminal connected to the control chip; and a molding resin covering the power chip, the control chip, one end of the power-side terminal, and one end of the control-side terminal, The other end of the power-side terminal and the other end of the control-side terminal protrude horizontally from the side of the molded resin and are bent downward in the middle. A heat dissipation portion is formed only on the other end side of the power side terminal among the power side terminal and the control side terminal, and protrudes from the downwardly bent portion toward or away from the molding resin. A through hole is formed in the heat dissipation portion.

2. A semiconductor device comprising: Power chip; A control chip, which controls the power chip; A power side terminal connected to the power chip; a control-side terminal connected to the control chip; and a molding resin covering the power chip, the control chip, one end of the power-side terminal, and one end of the control-side terminal, The other end of the power-side terminal and the other end of the control-side terminal protrude horizontally from the side of the molded resin and are bent downward in the middle. A heat dissipation portion is formed only on the other end side of the power side terminal among the power side terminal and the control side terminal, and protrudes from the downwardly bent portion toward or away from the molding resin. The heat dissipation portion is formed at the front end portion of the other end side of the power side terminal, The front end portion of the heat dissipation portion is tapered.

3. The semiconductor device according to claim 1 or 2, wherein: The power side terminal includes a positive terminal and a negative terminal, The heat dissipation portion is formed on the other end side of the positive electrode terminal or the other end side of the negative electrode terminal.

4. A method for manufacturing a semiconductor device, comprising manufacturing the semiconductor device according to claim 1, The other end of the power side terminal has a protrusion protruding from both ends of the power side terminal in the width direction. The method for manufacturing a semiconductor device comprises the following steps: (a) after forming the mold resin, forming the heat dissipation portion by bending the protruding portion of the power-side terminal; (b) bending a middle portion of the other end side of the power side terminal; and (c) A through hole is formed in the heat dissipation portion so as to penetrate the heat dissipation portion in the thickness direction.

5. A method for manufacturing a semiconductor device, comprising manufacturing the semiconductor device according to claim 2, The other end of the power side terminal has a protrusion protruding from both ends of the power side terminal in the width direction. The method for manufacturing a semiconductor device comprises the following steps: (a) after forming the mold resin, forming the heat dissipation portion by bending the protruding portion of the power-side terminal; (b) bending a middle portion of the other end side of the power side terminal; and (c) The front end portion of the heat dissipation portion is formed into a tapered shape.

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