A redistribution method applied to a double-sided electrode chip and a core board

Abstract

The present invention discloses a redistribution method for a double-sided electrode chip and a core board, comprising the steps of: double-sided etching of a copper bracket to form a through-hole, installing the double-sided electrode chip at the through-hole, pressing a first insulating layer above the double-sided electrode chip, single-sided etching of the copper bracket to form a copper pillar, pressing a second insulating layer below the double-sided electrode chip, connecting the first insulating layer and the second insulating layer to form a third insulating layer, double-sided etching of the third insulating layer to form a copper pillar blind hole portion arranged at the copper pillar and a chip blind hole portion arranged at the double-sided electrode chip, electroplating and filling the copper bracket blind hole portion and the chip blind hole portion to form a first redistribution layer and a second redistribution layer, wherein the first redistribution layer is connected to the second redistribution layer through the copper pillar, so as to reduce the depth of the through-hole, thereby reducing the difficulty of electroplating and filling the hole, thereby ensuring product production quality.

Description

Technical Field

[0001] The present invention relates to the field of printed circuit board manufacturing, in particular to a rewiring method applied to a double-sided electrode chip and a core board. Background Art

[0002] Chips with electrodes on both sides need to have the electrodes on both sides pulled to one side of the package during packaging. However, if the electrodes on both sides need to be pulled to the same side, through-molded via (TMV) technology is required. Through-molded via (TMV) technology refers to opening an opening in the plastic layer, that is, using laser or other methods to open the plastic layer after packaging and fill it with conductive material. However, due to the large depth of the through-hole, the electroplating filling process is more difficult. Summary of the Invention

[0003] In order to overcome the deficiencies of the prior art, the purpose of the present invention is to provide a rewiring method for double-sided electrode chips and a core board, which can reduce the depth of the through-holes to reduce the difficulty of electroplating and filling the holes, thereby ensuring product production quality.

[0004] The technical solution adopted by the present invention to solve the problem is:

[0005] In a first aspect, the present invention provides a rewiring method for a double-sided electrode chip, which is applied to a double-sided electrode chip and includes the following steps:

[0006] Double-sided etching is performed on the copper bracket to form a through hole;

[0007] Mounting the double-sided electrode chip at the through hole;

[0008] A first insulating layer is laminated on top of the double-sided electrode chip;

[0009] Performing single-side etching on the copper bracket to form a copper column;

[0010] A second insulating layer is laminated below the double-sided electrode chip, the first insulating layer and the second insulating layer are connected to form a third insulating layer, and the third insulating layer wraps the copper pillar and the double-sided electrode chip;

[0011] Performing double-sided etching on the third insulating layer to form a copper pillar blind hole portion provided at the copper pillar and a chip blind hole portion provided at the double-sided electrode chip;

[0012] The copper support blind hole portion and the chip blind hole portion are electroplated to form a first redistribution layer and a second redistribution layer. The first redistribution layer is cut, and the first redistribution layer is connected to the second redistribution layer through the copper column.

[0013] Furthermore, after the step of double-sided etching the copper bracket to form a through hole, the method further includes:

[0014] A support plate is installed below the through hole.

[0015] Furthermore, after the step of laminating the first insulating layer on top of the double-sided electrode chip, the method further includes:

[0016] Remove the support plate.

[0017] Furthermore, the third insulating layer includes a first copper foil layer, an insulating material layer and a second copper foil layer arranged from top to bottom.

[0018] Furthermore, the first insulating layer includes the first copper foil layer and the upper half of the insulating material layer arranged from top to bottom, and the second insulating layer includes the lower half of the insulating material layer and the second copper foil layer arranged from top to bottom.

[0019] Furthermore, the copper bracket is double-sided etched to form a through hole, which includes the following steps:

[0020] affixing a dry film on the copper bracket;

[0021] exposing the dry film until it is in a developed state;

[0022] Performing double-sided etching on the copper bracket to form a through hole;

[0023] The dry film is released from the copper support.

[0024] Furthermore, the first redistribution layer includes a first metal layer disposed in the first blind hole and a second metal layer disposed in the second blind hole.

[0025] Furthermore, the first metal layer is electrically connected to one electrode of the double-sided electrode chip, and the second metal layer is electrically connected to the other electrode of the double-sided electrode chip through the second redistribution layer.

[0026] Furthermore, after the step of electroplating and filling the copper support blind hole portion and the chip blind hole portion to form a first redistribution layer and a second redistribution layer, the method includes:

[0027] The core board is packaged and gold-plated.

[0028] In a second aspect, the present invention provides a core plate, comprising:

[0029] Insulation layer;

[0030] a copper pillar embedded in the insulating layer;

[0031] a double-sided electrode chip, wherein the double-sided electrode chip is embedded in the insulating layer;

[0032] a first blind hole, wherein the first blind hole is arranged above the copper pillar;

[0033] a second blind hole, the second blind hole being arranged below the copper pillar;

[0034] a third blind via, the third blind via being disposed above the double-sided electrode chip and electrically connected to one electrode of the double-sided electrode chip;

[0035] a fourth blind hole, the fourth blind hole being arranged below the double-sided electrode chip;

[0036] The first blind hole, the second blind hole, the third blind hole and the fourth blind hole are all filled with the metal layer, and the first blind hole is electrically connected to the other electrode of the double-sided electrode chip through the copper column and the metal layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The present invention will be further described below with reference to the accompanying drawings and examples.

[0038] Figure 1 The present invention is a flowchart of a method for rewiring a double-sided electrode chip;

[0039] Figure 2 The present invention is a flowchart of specific steps of a rewiring method applied to a double-sided electrode chip;

[0040] Figure 3 The present invention is a process flow chart of a part of a rewiring method applied to a double-sided electrode chip;

[0041] Figure 4 This is a process flow chart of another part of the rewiring method applied to a double-sided electrode chip;

[0042] Figure 5 This is a process flow chart of another part of the rewiring method applied to a double-sided electrode chip;

[0043] Figure 6 This is a process flow chart of another part of the rewiring method applied to a double-sided electrode chip;

[0044] Figure 7 This is a process flow chart of another part of the rewiring method applied to a double-sided electrode chip;

[0045] Figure 8 This is a process flow chart of another part of the rewiring method applied to a double-sided electrode chip;

[0046] Figure 9 It is a structural diagram of a core board. DETAILED DESCRIPTION

[0047] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0048] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on the present invention.

[0049] In the description of the present invention, "several" means one or more, "many" means more than two, "greater than," "less than," and "exceed" are understood to exclude the number itself, while "above," "below," and "within" are understood to include the number itself. The use of "first" and "second" in the description is solely for the purpose of distinguishing technical features and should not be construed as indicating or implying relative importance, implicitly specifying the number of the indicated technical features, or implicitly specifying the order of the indicated technical features.

[0050] Reference Figures 1-8 The present invention provides a rewiring method for a double-sided electrode chip, comprising:

[0051] Step S1, etching the copper bracket 100 on both sides to form a through hole 110;

[0052] In step S1, the specific operation steps are as follows:

[0053] Step S8, applying a dry film on the copper bracket 100;

[0054] Step S9, exposing the dry film until it is in a developed state;

[0055] Step S10, etching the copper bracket 100 on both sides to form a through hole;

[0056] Step S11 , separating the dry film from the copper support 100 .

[0057] It should be noted that before step S1 , a step of installing a support plate 101 below the through hole 110 is also included. The function of the support plate 101 is mainly to provide support for the double-sided electrode chip 120 .

[0058] Step S2, installing the double-sided electrode chip 120 at the through hole 110;

[0059] It should be noted that in step S2 , the double-sided electrode chip 120 is placed on the support plate 101 . If there is no support plate 101 , the double-sided electrode chip 120 will directly fall from the through hole 110 .

[0060] Step S3: laminating the first insulating layer on top of the double-sided electrode chip 120;

[0061] It should be noted that in step S3, the first insulating layer includes a first copper foil layer 201 and the upper half 200 of the insulating material layer. The upper half 200 of the insulating material layer is directly adhered to the top and side surfaces of the double-sided electrode chip 120, thereby achieving the effect of sticking the double-sided electrode chip 120 to the insulating material layer 202. Therefore, after step S3, the step of removing the support plate 101 is also included.

[0062] Step S4, performing single-side etching on the copper bracket 100 to form a copper column 300;

[0063] It should be noted that before performing step S4, the upper half 200 of the insulating material layer has been shaped and the copper bracket 100 is no longer needed for shaping and support. Therefore, the copper bracket 100 is etched into a copper column 300 to serve as the intermediate conductor for pulling the two electrodes of the double-sided electrode chip 120 to the same side. It must be noted that the core board is produced in an assembly line manner, so the copper bracket 100 on the right side of the through hole 110 also needs to be etched away. Because if the copper column on the right side of the through hole 110 is not etched away, it may cause difficulties in cutting and separating the core board in the later stage, and may cause a short circuit in the double-sided electrode chip 120, thereby reducing product productivity.

[0064] Step S5: The second insulating layer is laminated under the double-sided electrode chip 120 , and the first insulating layer and the second insulating layer are connected to form a third insulating layer, which wraps the copper pillar 300 and the double-sided electrode chip 120 ;

[0065] It should be noted that in step S5, the second insulating layer includes the lower half of the insulating material layer and the second copper foil layer 203. After the second insulating layer is pressed, the upper half of the insulating material layer and the lower half of the insulating material layer will be bonded to form a complete insulating material layer 202, and the first insulating layer and the second insulating layer will become a whole, which is named the third insulating layer. The third insulating layer completely wraps the copper column and the double-sided electrode chip 120 therein.

[0066] Step S6, double-sided etching is performed on the third insulating layer to form a copper pillar blind hole portion provided at the copper pillar 300 and a chip blind hole portion provided at the double-sided electrode chip 120;

[0067] It should be noted that in step S6, the positions of the third insulating layer corresponding to the copper pillar 300 and the double-sided electrode chip 120 are double-sided etched to form a copper pillar blind hole portion set at the copper pillar 300 and a chip blind hole portion set at the double-sided electrode chip 120. The copper pillar blind hole portion includes a first copper pillar blind hole set above the copper pillar 300 and a second copper pillar blind hole set below the copper pillar 300. The chip blind hole portion includes a first chip blind hole set above the double-sided electrode chip 120 and a second chip blind hole set below the double-sided electrode chip 120.

[0068] Step S7, electroplating and filling the copper bracket blind hole part and the chip blind hole part to form the first redistribution layer 400 and the second redistribution layer 401, cutting the first redistribution layer 400, and connecting the first redistribution layer 400 with the second redistribution layer 401 through the copper column 300.

[0069] It should be noted that in step S7, the first copper pillar blind hole and the first chip blind hole are electroplated and filled to form a first redistribution layer 400, the second copper pillar blind hole and the second chip blind hole are electroplated and filled to form a second redistribution layer 401, the first redistribution layer 400 includes the first redistribution layer including a first metal layer arranged in the first blind hole and a second metal layer arranged in the second blind hole, the first chip blind hole is electroplated and filled to become a first blind hole, the first metal layer is electrically connected to an electrode of the double-sided electrode chip 120, the first copper pillar blind hole is electroplated and filled to become a second blind hole, the second metal layer is electrically connected to the double-sided electrode chip The other electrode of the double-sided electrode chip 120 is electrically connected, wherein the first metal layer and the second metal layer were originally connected. In order to avoid the connection between the two electrodes of the double-sided electrode chip 120, the first redistribution layer 400 is cut to separate the first metal layer and the second metal layer, while the second redistribution layer 401 is not cut, which means that the copper pillar 300, the second copper pillar blind hole, the second chip blind hole and the other electrode of the double-sided electrode chip 120 are electrically connected. Such an arrangement allows the second metal layer to be electrically connected to the other electrode of the double-sided electrode chip 120, thereby achieving the goal of pulling the two-sided electrodes to the same side while reducing the through-hole depth.

[0070] Furthermore, after the steps of electroplating and filling the copper pillar blind vias and the chip blind vias to form the first redistribution layer 400 and the second redistribution layer 401, the process includes packaging the core board and gold plating the core board.

[0071] Reference Figure 9 The present invention provides a core board, characterized in that it includes:

[0072] Insulation layer 600;

[0073] Copper pillar 601, copper pillar 601 is embedded in the interior of insulating layer 600;

[0074] Double-sided electrode chip 602, the double-sided electrode chip 602 is embedded in the interior of the insulating layer 600;

[0075] A first blind hole 605 is provided above the copper pillar 601;

[0076] A second blind hole 607 is provided below the copper pillar 601;

[0077] A third blind via 606 is provided above the double-sided electrode chip 602 and is electrically connected to one electrode of the double-sided electrode chip 602;

[0078] A fourth blind hole 608 is provided below the double-sided electrode chip 602;

[0079] The metal layer 609 , the first blind via 605 , the second blind via 607 , the third blind via 606 and the fourth blind via 608 are all filled with the metal layer 609 , and the first blind via 605 is electrically connected to the other electrode of the double-sided electrode chip 602 through the copper pillar 601 and the metal layer 609 .

[0080] Furthermore, it also includes a first copper foil layer 603 and a second copper foil layer 604 , and the first copper foil layer 603 and the second copper foil layer 604 wrap the insulation layer 600 .

[0081] The above is a specific description of the preferred implementation of the present invention, but the present invention is not limited to the above implementation. Those skilled in the art can make various equivalent modifications or substitutions without violating the spirit of the present invention. These equivalent modifications or substitutions are all included in the scope defined by the claims of this application.

Claims

1. A rewiring method applied to a double-sided electrode chip, characterized in that: Applied to double-sided electrode chips, the specific steps include: Double-sided etching is performed on the copper bracket to form a through hole; Mounting the double-sided electrode chip at the through hole; A first insulating layer is pressed onto the double-sided electrode chip and the copper bracket; Performing single-side etching on the copper bracket to form a copper column; A second insulating layer is laminated below the double-sided electrode chip and the copper pillar, the first insulating layer and the second insulating layer are connected to form a third insulating layer, and the third insulating layer wraps the copper pillar and the double-sided electrode chip; Performing double-sided etching on the third insulating layer to form a copper pillar blind via portion provided at the copper pillar and a chip blind via portion provided at the double-sided electrode chip, wherein the copper pillar blind via portion includes a first copper pillar blind via provided above the copper pillar and a second copper pillar blind via provided below the copper pillar, and the chip blind via portion includes a first chip blind via provided above the double-sided electrode chip and a second chip blind via provided below the double-sided electrode chip; The first copper pillar blind hole and the first chip blind hole are electroplated and filled to form a first redistribution layer, and the second copper pillar blind hole and the second chip blind hole are electroplated and filled to form a second redistribution layer. The first chip blind hole becomes a first blind hole after being electroplated and filled, and the first copper pillar blind hole becomes a second blind hole after being electroplated; the first redistribution layer includes a first metal layer arranged in the first blind hole and a second metal layer arranged in the second blind hole; the first redistribution layer is cut to separate the first metal layer and the second metal layer, the first metal layer is electrically connected to one electrode of the double-sided electrode chip, and the second metal layer is electrically connected to the other electrode of the double-sided electrode chip through the copper pillar and the second redistribution layer.

2. The rewiring method for a double-sided electrode chip according to claim 1, characterized in that: After double-sided etching of the copper bracket to form a through hole, the method further includes: A support plate is installed below the through hole.

3. The rewiring method for a double-sided electrode chip according to claim 2, characterized in that: After the step of laminating the first insulating layer on the double-sided electrode chip and the copper bracket, the method further includes: Remove the support plate.

4. The rewiring method for a double-sided electrode chip according to claim 1, characterized in that: The third insulating layer includes a first copper foil layer, an insulating material layer and a second copper foil layer arranged from top to bottom.

5. The rewiring method for a double-sided electrode chip according to claim 4, characterized in that: The first insulating layer includes the first copper foil layer and the upper half of the insulating material layer arranged from top to bottom, and the second insulating layer includes the lower half of the insulating material layer and the second copper foil layer arranged from top to bottom.

6. The rewiring method for a double-sided electrode chip according to claim 1, characterized in that: The steps of double-sided etching of the copper bracket to form a through hole include: affixing a dry film on the copper bracket; exposing the dry film until it is in a developed state; Performing double-sided etching on the copper bracket to form a through hole; The dry film is released from the copper support.

7. The rewiring method for a double-sided electrode chip according to claim 1, characterized in that: After the steps of electroplating and filling the first copper pillar blind via and the first chip blind via to form a first redistribution layer, and electroplating and filling the second copper pillar blind via and the second chip blind via to form a second redistribution layer, the method includes: The core board is packaged and gold-plated.

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