Lithography system and method for forming semiconductor device

Abstract

A lithography system and a method for forming a semiconductor device, the method comprising transferring a wafer over a wafer carrier on a wafer stage. The wafer stage comprises a stage body, a wafer carrier, a first sliding component, a second sliding component, a first cable, a first bracket and a second bracket, and a stopper. The second sliding component is movable along a first direction, wherein the first sliding component is coupled to a track of the second sliding component, and the first sliding component is movable along a second direction perpendicular to the first direction. The first bracket and the second bracket are connected by a leaf spring. The method comprises moving the wafer carrier toward an edge of the stage body so that the wafer carrier pushes the first cable outward, so that the leaf spring moves toward a first protective film on a surface of the leaf spring facing the leaf spring of the stopper.

Description

Technical Field

[0001] The present disclosure relates to lithography systems and methods of forming semiconductor devices. Background Art

[0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generations of ICs, each with smaller and more complex circuits than the previous generation. During IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased, while geometry size (i.e., the smallest component (or wire) that can be produced using a manufacturing process) has decreased. This scaling down process generally provides benefits by increasing production efficiency and reducing associated costs. This scaling down has also increased the complexity of IC processing and manufacturing. For these advances to be achieved, similar advances in IC processing and manufacturing are needed. For example, the need to perform higher resolution lithography processes has grown. One lithography technique is extreme ultraviolet lithography (EUVL). Other techniques include x-ray lithography, ion beam projection lithography, electron beam projection lithography, and multiple electron beam maskless lithography.

[0003] EUVL utilizes several scanners that use light in the extreme ultraviolet (EUV) region with a wavelength of about 1 to 100 nm. Some EUV scanners provide a 4-fold reduction in projection printing similar to some optical scanners, except that EUV scanners use reflective optics instead of refractive optics, that is, mirrors instead of lenses. The EUV scanner provides the desired pattern on the wafer by transferring a mask pattern defined by an absorber layer. Currently, binary intensity masks (BIM) accompanied by on-axis illumination (ONI) are used in EUVL. In order to achieve appropriate virtual image contrast for future nodes, such as nodes with minimum pitches of 32nm and 22nm, attenuated phase-shifting masks (AttPSM) and alternating phase-shifting masks (AltPSM) have been developed to achieve resolution enhancement for EUVL. But each technology has its limitations that need to be overcome. For example, however, the absorbing layer may not fully absorb the incident light, and a portion of the incident light is reflected from the absorbing layer. In addition, the thickness of the absorbing layer causes shadowing effects. All of these problems often result in reduced virtual image contrast, which can lead to poor pattern profiles and poor resolution, especially as pattern feature size continues to decrease. There is a need for improvements in this area. Summary of the invention

[0004] According to some embodiments of the present disclosure, a method includes transferring a wafer above a wafer carrier on a wafer table. The wafer table includes a main body, a wafer carrier, a first sliding component, a second sliding component, a first cable, a first bracket and a second bracket, and a stopper. The wafer carrier is movably disposed above the main body. The first sliding component is coupled to the wafer carrier. The second sliding component is coupled to an edge of the main body, and the second sliding component is movable along a first direction, wherein the first sliding component is coupled to a track of the second sliding component, and the first sliding component is movable along a second direction perpendicular to the first direction. The first cable is coupled to the wafer carrier and extends along the second direction. The first bracket and the second bracket fix the first cable, and the first bracket and the second bracket are connected by a leaf spring. The stopper is disposed below the first cable. The method includes moving the wafer stage toward the edge of the stage body so that the wafer stage pushes the first cable outward, causing the leaf spring to move toward a first protective film on a surface of the stopper facing the leaf spring.

[0005] According to some embodiments of the present disclosure, a method includes the following steps: transferring a wafer into a first chamber of a load lock, the first chamber coupled to a gate valve assembly, the gate valve assembly having a gate valve seal and a gate pressed against a protective film on a surface of the gate valve seal; moving the gate downward away from the protective film on the surface of the gate valve seal to reveal an opening of the gate valve seal; transferring the wafer from the first chamber to a second chamber through the opening of the gate valve seal; and performing a semiconductor process on the wafer in the second chamber.

[0006] According to some embodiments of the present disclosure, a lithography system includes a main body, a wafer carrier, a first sliding component, a second sliding component, a first cable, a first bracket, a rail guide block and a first protective film. The wafer carrier is movably disposed above the main body. The first sliding component is coupled to the wafer carrier. The second sliding component is coupled to an edge of the main body of the table, and the second sliding component is movable along a first direction, wherein the first sliding component is coupled to a track of the second sliding component, and the first sliding component is movable along a second direction perpendicular to the first direction. The first cable is coupled to the second sliding component and extends along the first direction. The first bracket fixes the first cable, and the first bracket is coupled to a roller structure, wherein the roller structure includes a main body and a wheel coupled to the main body. The rail guide block limits a movement of the wheel of the roller structure. The first protective film is adhered to a surface of the track guide block, wherein the roller structure is movable along the first protective film on the surface of the track guide block. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The aspects of this disclosure are in the attached Figure 1 The following detailed description is best understood when read together. It should be noted that, according to standard practice in the industry, various features are not drawn to scale. In fact, the sizes of various features may be arbitrarily increased or reduced for clarity of discussion.

[0008] Figure 1 is a schematic diagram of a lithography system according to some embodiments of the present disclosure;

[0009] Figure 2 is a schematic diagram of a lithography system according to some embodiments of the present disclosure;

[0010] Figure 3 is a schematic diagram of a loading lock according to some embodiments of the present disclosure;

[0011] Figure 4A and Figure 4B is a schematic diagram of a gate valve assembly according to some embodiments of the present disclosure;

[0012] Figure 5is a schematic diagram of a wafer stage of a lithography chamber according to some embodiments of the present disclosure;

[0013] Fig. 6A is a schematic diagram of a wafer stage of a lithography chamber according to some embodiments of the present disclosure;

[0014] Figure 6B is a schematic diagram of a leaf spring of a wafer stage of a lithography chamber according to some embodiments of the present disclosure;

[0015] Figure 6C and Fig.6D is a schematic diagram of a stopper of a wafer stage of a lithography chamber according to some embodiments of the present disclosure;

[0016] Fig. 7A and Figure 7B is a side view of a wafer stage of a lithography chamber according to some embodiments of the present disclosure;

[0017] Figure 8 is a schematic diagram of a wafer stage of a lithography chamber according to some embodiments of the present disclosure;

[0018] Fig. 9A and Fig. 9B is a side view of a wafer stage of a lithography chamber according to some embodiments of the present disclosure;

[0019] Fig.10 A method of forming a semiconductor device according to some embodiments of the present disclosure is illustrated;

[0020] Fig.11 A method of forming a semiconductor device according to some embodiments of the present disclosure is illustrated.

[0021]

Explanation of symbols

[0022] 10: Lithography system

[0023] 20: Lithography System

[0024] 102: Laser source

[0025] 104:Laser beam

[0026] 106: Beam Transport System

[0027] 108: Focusing system

[0028] 108a: Lens

[0029] 108b: Lens

[0030] 110: Extreme Ultraviolet (EUV) Source Container

[0031] 112: Droplets

[0032] 114: Plasma

[0033] 116: Extreme Ultraviolet (EUV) Radiation

[0034] 118: Collector mirror

[0035] 120:Fuel droplet generator

[0036] 125: Droplet collection device

[0037] 130: Intermediate Focus (IF) Unit

[0038] 140: Imager

[0039] 150: Extreme Ultraviolet (EUV) Energy Monitor

[0040] 200: Scanner

[0041] 210: Concentrator

[0042] 212a: first surface

[0043] 212b: Second surface

[0044] 214:Reflector

[0045] 220: Extreme Ultraviolet (EUV) Mask

[0046] 222a: Absorption characteristics

[0047] 222b: Absorption characteristics

[0048] 222c: Absorption characteristics

[0049] 230a: First mirror

[0050] 230b: Second mirror

[0051] 230c: Third mirror

[0052] 230d: The fourth mirror

[0053] 250: Wafer

[0054] 260: Wafer Handler

[0055] 262: Gate valve assembly

[0056] 263: Gate valve assembly

[0057] 264: Locking piece

[0058] 2642: Main body

[0059] 2643: Chamber

[0060] 2644: Lid

[0061] 265: Locking piece

[0062] 266: Wafer exchange chamber

[0063] 267: Gate valve assembly

[0064] 268: Gate valve assembly

[0065] 269:Robotic Arm

[0066] 270: Gate valve assembly

[0067] 271: Micro-image chamber

[0068] 272: Wafer stage

[0069] 273: Wafer stage

[0070] 310: Gate valve seat

[0071] 312: Opening

[0072] 320: Surface

[0073] 320A: Section

[0074] 320B: Segment

[0075] 320C: Segment

[0076] 330: Gate

[0077] 332: Valve plate

[0078] 3320: Top edge

[0079] 3320A: Segment

[0080] 3320B: Segment

[0081] 3320C: Segment

[0082] 334: Sealing material

[0083] 340: Protective film

[0084] 400: Micro-image chamber

[0085] 405: Wafer table

[0086] 410: Main body

[0087] 411: Side wall

[0088] 412: Gap

[0089] 415: Wafer stage

[0090] 420: first sliding member

[0091] 430: Second sliding member

[0092] 430A: Part I

[0093] 430B: Part 2

[0094] 432: Track

[0095] 440A: Cable

[0096] 440B: Cable

[0097] 440C: Cable

[0098] 440D: Cable

[0099] 460: Bracket

[0100] 465: Bracket

[0101] 510: First bracket

[0102] 512: Wider part

[0103] 514: Narrow part

[0104] 520: Second bracket

[0105] 530: Leaf spring

[0106] 535:Screw

[0107] 540:Frame

[0108] 550: Stopper

[0109] 550A: Part 1

[0110] 550B: Part 2

[0111] 550C: Part 3

[0112] 550S: Gap

[0113] 560: Protective film

[0114] 570: Protective film

[0115] 570A: Part 1

[0116] 570B: Part 2

[0117] 570C: Part 3

[0118] 570D: Part 4

[0119] 610: Bracket

[0120] 630: Roller structure

[0121] 632: Main body

[0122] 634:Wheels

[0123] 640: Rail guide block

[0124] 645: Stop plate

[0125] 660: Protective film

[0126] 670: Protective film

[0127] L1: Length

[0128] LA: Length

[0129] LB: Length

[0130] LC: Length

[0131] M1: Method

[0132] M2: Methods

[0133] S101: Steps

[0134] S102: Steps

[0135] S103: Steps

[0136] S104: Steps

[0137] S201: Steps

[0138] S202: Steps

[0139] S203: Steps

[0140] S204: Steps

[0141] S205: Steps

[0142] W1: Width

[0143] WA:width

[0144] WB: Width

[0145] WC: Width DETAILED DESCRIPTION

[0146] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. Specific examples of components and configurations are described below to simplify the disclosure. Of course, these components and configurations are only examples and are not intended to be restrictive. For example, in the following description, the formation of a first feature above or on a second feature may include an embodiment in which the first and second features are directly contacted, and may also include an embodiment in which an additional feature may be formed between the first and second features so that the first and second features may not be directly contacted. In addition, the disclosure may repeat reference numbers and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0147] Additionally, spatially relative terms, such as "below," "beneath," "lower," "above," "upper," and the like may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0148] Figure 1 Schematic diagram of a lithography system according to some embodiments of the present disclosure. The advanced lithography processes, methods, and materials described in the present disclosure can be used in many applications including fin-type field effect transistors (FinFETs). For example, fins can be patterned to produce relatively tight spacing between features, and the above disclosure will be well suited for such features. In addition, spacers in fins used to form FinFETs can be processed according to the above disclosure.

[0149] Figure 1 Schematic diagram of a lithography system according to some embodiments of the present disclosure. An EUV lithography system 10 is depicted herein. Although the EUV lithography system 10 is illustrated as having a certain configuration of components, it should be understood that the disclosed lithography system 10 may include additional components (e.g., additional mirrors) or have fewer components (e.g., fewer mirrors).

[0150] The EUV lithography system 10 includes an EUV source container 110. A fuel droplet generator 120 is connected to the EUV source container 110 and is used to generate a plurality of fuel droplets 112. In some embodiments, the fuel droplets 112 generated by the fuel droplet generator 120 are provided to the EUV source container 110. In some embodiments, the fuel droplets 112 may include tin (Sn). In other embodiments, the fuel droplets 112 may include different metal materials. In some embodiments, the EUV source container 110 may also be referred to as a radiation source, wherein the radiation source uses a laser produced plasma (LPP) mechanism to generate plasma, and further generates EUV light from the plasma.

[0151] The EUV lithography system 10 may also include a droplet position detection system, which may include a droplet imager 140 disposed in the EUV source container 110, and the droplet imager 140 captures an image of one or more fuel droplets 112. The droplet imager 140 may provide the captured image to a droplet position detection feedback system (not shown), which may generate droplet positions and trajectories, for example, in response to analysis of the captured image. The position detection feedback system may thus generate droplet errors, for example, on a droplet-by-droplet basis or on an average, in response to the generated droplet positions and trajectories. In some embodiments, the droplet imager 140 may include a fine droplet steering camera (FDSC), a droplet formation camera (DFC), and / or suitable devices.

[0152] The EUV lithography system 10 further includes a primary laser having a laser source 102 for generating a laser beam 104. In some embodiments, the laser source 102 may include a multi-stage laser having multiple stages for amplifying the laser light generated by the previous stages. The laser beam 104 passes through a beam transport system 106 for providing the laser beam to a focusing system 108. The focusing system 108 includes one or more lenses 108a, 108b and / or mirrors, each of which is disposed in the beam line and is used to focus the laser beam 104. The laser beam 104 is output from the focusing system 108 to an EUV source container 110.

[0153] The laser beam 104 is transmitted through a collector mirror 118 positioned within the EUV source container 110. Next, the primary laser beam 104 generated by the laser source 102 encounters the fuel droplets 112. In some embodiments, the primary laser beam 104 may be a carbon dioxide (CO2) laser. In other embodiments, the primary laser beam 104 may include an alternative type of laser. When the primary laser beam 104 impacts the fuel droplets 112, the primary laser beam 104 heats the fuel droplets 112 to a predetermined temperature. At the predetermined temperature, the fuel droplets 112 emit their electrons and become a plasma 114 including a plurality of ions. In some embodiments, the ions emit EUV radiation 116 (e.g., having a wavelength of about 13.3 nm to about 13.7 nm).

[0154] In some embodiments, the collector mirror 118 has a concave curvature. In some embodiments, the collector mirror 118 may include a multilayer coating having alternating layers of different materials. For example, in some embodiments, the collector mirror 118 may include alternating layers of molybdenum and silicon to operate as a Bragg reflector. The concave curvature of the collector mirror 118 focuses the EUV radiation 116 generated by the plasma 114 toward an intermediate focus (IF) unit 130 within an exit aperture of the EUV source container 110. The intermediate focus unit 130 is positioned between the EUV source container 110 and a scanner 200 including optics to direct the EUV radiation 116 toward a workpiece (e.g., a semiconductor substrate). In some embodiments, the intermediate focus unit 130 may include a tapered aperture to provide pressure separation between the EUV source container 110 and the scanner 200. In some embodiments, the intermediate focus unit 130 may extend into the scanner 200.

[0155] The EUV lithography system 10 may also include an EUV energy monitor 150 disposed in the EUV source container 110. The EUV energy monitor 150 is designed to monitor the EUV intensity or energy generated from the EUV source container 110. For example, the EUV energy monitor 150 includes an EUV sensing device, such as a diode, which is designed to be sensitive to EUV light and to effectively detect EUV light. In other examples, the EUV energy monitor 150 includes a plurality of diodes configured in an array to effectively detect EUV light for monitoring purposes. In some embodiments, a dose error is calculated based on the sensed EUV intensity (or energy). For example, when the sensed EUV intensity (or energy) is below a predetermined threshold value, this situation may be referred to as a dose error. Typically, the dose error is related to plasma instability, and by monitoring the EUV intensity through the EUV energy monitor 150, the dose error can be extracted from the monitored EUV intensity. Therefore, when a dose error occurs, the dose error indicates that the plasma 114 is unstable.

[0156] In some embodiments, the EUV lithography system further includes a droplet collection device 125 disposed in the EUV source container 110 and positioned opposite to the droplet generator 120. The droplet collection device 125 is used to collect the fuel droplets 112 that are not evaporated during the formation of the EUV radiation 116 and / or the fragments of the fuel droplets 112 generated during the formation of the EUV radiation 116.

[0157] The EUV radiation 116 output from the EUV source container 110 is provided to the concentrator 210 by means of the intermediate focus unit 130. In some embodiments, the concentrator 210 includes a first surface 212a and a second surface 212b for focusing the EUV radiation 116; and a reflector 214 for reflecting the EUV radiation 116 toward the EUV mask 220. The EUV mask 220 is used to reflect the EUV radiation 116 to form a pattern on the surface of the semiconductor wafer 250. To generate the pattern, the EUV mask 220 may include a plurality of absorption features 222a, 222b, and 222c disposed on the front surface of the EUV mask 220. The plurality of absorption features 222a, 222b, and 222c are used to absorb the EUV radiation 116 so that reflected rays of the EUV radiation 116 convey the pattern defined by the EUV mask 220.

[0158] The EUV radiation 116 is filtered through reducing optics including a series of first mirror 230a, second mirror 230b, third mirror 230c, and through fourth mirror 230d, which act as lenses to reduce the size of the pattern carried by the EUV radiation 116. In some embodiments, the fourth mirror 230d conveys the EUV radiation 116 onto a photoresist layer disposed on a surface of the semiconductor wafer 250. The EUV radiation 116 irradiates specific areas of the photoresist layer based on the pattern carried by the EUV radiation 116, and thus the layer of the irradiated photoresist layer may be patterned after developing it. Thus, subsequent processing may be performed on selected areas of the semiconductor wafer 250.

[0159] Figure 2 FIG. 2 is a schematic diagram of a lithography system 20 according to the present disclosure. The lithography system 20 may be used to pattern a semiconductor wafer, as described above with respect to FIG. Figure 1 2. The semiconductor wafer 250 is discussed in detail. Here, the wafer 250 is indicated by a dotted circle. Typically, the wafer is moved from the wafer handler 260 to the lithography chamber 271 via the load locks 264, 265 and the wafer exchange chamber 266. It should be understood that when the wafer 250 is positioned in the lithography chamber 271, the process performed in Figure 1 In some embodiments, the wafer 250 in the wafer handler 260 may have undergone several processes, such as resist coating, pre-baking, and other processes, before performing the lithography process. After the lithography process, the wafer is returned to the wafer handler 260 for further processing steps, such as development, post-baking, and the like.

[0160] The wafer handler 260 is separated from the loading locks 264, 265 by gate valve assemblies 262, 263. The loading locks 264, 265 are separated from the wafer exchange chamber 266 by gate valve assemblies 267, 268. Therefore, the loading locks 264, 265 can also be referred to as chambers separated from the wafer handler 260 and the wafer exchange chamber 266 by respective gate valve assemblies 267, 268. In some embodiments, the loading locks 264, 265 can be further connected to vacuum and ventilation devices (not shown) that allow the loading locks 264, 265 to transition from ambient pressure to vacuum (evacuation) and back to ambient pressure again (venting). In this way, the wafer exchange chamber 266 can be maintained at a high vacuum while the wafer handler 260 is maintained at atmospheric pressure. The load locks 264, 265 are thus used to move wafers into and out of the wafer exchange chamber 266 while transitioning from atmospheric pressure to a high vacuum.

[0161] In some embodiments, the wafer exchange chamber 266 may include a robot 269. The robot 269 is used to transfer wafers from the load locks 264, 265 to the lithography chamber 271. In some embodiments, the robot 269 may include a single end effector, or a dual-ended non-mechanical transport mechanism may also be used without departing from the scope of the present disclosure.

[0162] The wafer exchange chamber 266 is connected to the lithography chamber 271 through the gate valve assembly 270. In some embodiments, the lithography chamber 271 includes wafer stages 272, 273. The wafer stages 272, 273 can be moved in the indicated directions for fine alignment and exposure processes. The lithography chamber 271 thus further includes projection optics or other devices necessary to perform lithography patterning. Although the lithography chamber 271 is shown as having two wafer stages 272, 273, fewer or more wafer stages may also be used.

[0163] Figure 3 FIG. 2 is a schematic diagram of loading locks 264 and 265 according to some embodiments of the present disclosure. Figure 3 , respectively, loading lock 264 is coupled to gate valve assembly 262, and loading lock 265 is coupled to gate valve assembly 263. The following discussion uses loading lock 264 and gate valve assembly 262 as examples, but it should be understood that loading lock 264 and gate valve assembly 263 may include similar or identical configurations, so the relevant details will not be repeated for simplicity.

[0164] The gate valve assembly 262 includes a gate valve seat 310 and a gate 330 facing the gate valve seat 310. In some embodiments, the gate valve seat 310 of the gate valve assembly 262 may be fixed to the surface of the body 2642 of the load lock 264. In addition, the gate valve seat 310 may include an opening 312, and the opening 312 may be aligned with the slit on the body 2642 of the load lock 264, so that the opening 312 is in communication with the chamber 2643 in the body 2642 of the load lock 264, which allows a wafer (e.g., wafer 250) to enter and exit the chamber 2643 of the load lock 264 via the gate valve assembly 262.

[0165] On the other hand, the gate 330 of the gate valve assembly 262 is movable in at least one direction. For example, the gate 330 may be movable in a vertical direction, so that when the gate 330 moves upward, the gate 330 may be pressed against the gate valve seat 310 and seal the opening 312 of the gate valve seat 310, so that the loading lock 264 may be isolated from the space gas coupled to the other side of the gate valve assembly 262.

[0166] In some embodiments, the load lock 264 further includes a cover 2644 over the chamber 2643 in the body 2642 of the load lock 264. The cover 2644 can cover the chamber 2643 of the load lock 264. In some embodiments, the cover 2644 can include a thermal shield (not shown).

[0167] Figure 4A and Figure 4B According to some embodiments of the present disclosure Figure 3 A schematic diagram of a gate valve assembly 262 is shown. Figure 4A The gate 330 is shown separated from the gate valve seat 310 to expose the opening 312 of the gate valve seat 310 . Figure 4A The diagram shows a state in which the gate 330 is pressed against the gate valve seat 310 to seal the opening 312 of the gate valve seat 310 .

[0168] In more detail, the gate 330 includes a valve plate 332, and a sealing material 334 is conformally disposed on a top edge 3320 of the valve plate 332. In some embodiments, the sealing material 334 may be made of a flexible or elastic material such as rubber. In some embodiments, the top edge 3320 of the valve plate 332 has a section 3320A, and sections 3320B and 3320C on opposite sides of the section 3320A. The section 3320A of the top edge 3320 extends in a horizontal direction and can be regarded as a horizontal surface. On the other hand, the sections 3320B and 3320C are inclined relative to the section 3320A. Since the sealing material 334 is conformally disposed on the top edge 3320 of the valve plate 332, the sealing material 334 may also include a horizontal portion and an inclined portion on the opposite side of the horizontal portion.

[0169] Regarding the gate valve seat 310, the gate valve seat 310 has a surface 320 to which the sealing material 334 on the valve plate 332 of the gate 330 is pressed. In some embodiments, the surface 320 has a section 320A, and sections 320B and 320C on opposite sides of the section 320A. The section 320A of the surface 320 extends in the horizontal direction and can be regarded as a horizontal surface. On the other hand, the sections 320B and 320C are inclined relative to the section 320A. In some embodiments, the gate valve seat 310 is made of metal, and thus the surface 320 of the gate valve seat 310 is made of metal.

[0170] In some embodiments, the protective film 340 is conformally disposed on the surface 320 of the gate valve seat 310. In some embodiments, the protective film 340 substantially covers the entire surface 320 of the gate valve seat 310. That is, the protective film 340 may cover the sections 320A, 320B and 320C of the surface 320 of the gate valve seat 310. In some embodiments, the protective film 340 may be an adhesive film detachable from the surface of the gate valve seat 310, and may be made of a material different from the material of the surface 320 of the gate valve seat 310. In some embodiments, the protective film 340 may include a material having a friction coefficient of less than 0.3 and a tensile strength (at the breaking point) of greater than 48Mpa in a vacuum. In some embodiments, the protective film 340 may be an ultra high molecular weight polyethylene (UHMWPE) strip. In some embodiments, the protective film 340 may be a silicon pressure sensitive adhesive (PSA). In some embodiments, the protective film 340 can meet the requirement of zero (or negligibly small) detected by the Total Organic Carbon (TOC) test for the degassing limit of refractory materials at temperatures of about 40°C and about 100°C, which ensures that the protective film 340 will not decompose at the selected temperature and will not contaminate other structures in the lithography chamber 400.

[0171] like Figure 4B As shown in FIG. 1 , when the gate 330 moves upward, the sealing material 334 on the valve plate 332 of the gate 330 presses the protective film 340 on the surface 320 of the gate valve seat 310. The sealing material 334 can be pressed against the protective film 340 on the surface 320 of the gate valve seat 310 to seal the gas passing through the opening 312 of the gate valve seat 310. In some embodiments, since the protective film 340 substantially covers the entire surface 320 of the gate valve seat 310, when the gate 330 moves upward and seals the opening 312 (see FIG. 1 ), the sealing material 334 can be pressed against the protective film 340 on the surface 320 of the gate valve seat 310 to seal the gas passing through the opening 312 of the gate valve seat 310. Figure 4B ), the sealing material 334 does not directly contact the surface 320 of the gate valve seat 310. That is, even if the gate 330 moves upward and seals the opening 312, the sealing material 334 is separated from the surface 320 of the gate valve seat 310 by the protective film 340 because the protective film 340 is sandwiched between the sealing material 334 and the surface 320 of the gate valve seat 310.

[0172] Figure 5 FIG. 1 is a schematic diagram of a wafer stage of a lithography chamber according to some embodiments of the present disclosure. Figure 5 The lithography chamber 400 discussed in Figure 2 The lithography chamber 271 discussed in FIG.

[0173] The lithography chamber 400 includes a wafer stage 405 having a stage body 410 (e.g., a stage frame). At least one wafer stage 415 is movably disposed on the stage body 410, and thus the stage body 410 may include a flat horizontal upper surface on which the wafer stage 415 can move. Note that the wafer stage 415 here may be similar to that in Figure 2 In some embodiments, wafer stage 415 may be coupled to stage body 410 via an anti-friction device (not shown). For example, the anti-friction device may include an anti-friction bearing, such as a gas bearing, a fluid bearing, a roller bearing, or the like.

[0174] The wafer stage 405 also includes a first sliding member 420 and a second sliding member 430. In some embodiments, the second sliding member 430 has a first portion 430A extending along the upper surface of the stage body 410 and a second portion 430B on the sidewall of the stage body 410. In some embodiments, the second portion 430B of the second sliding member 430 is coupled to the slit 412 on the sidewall 411 of the stage body 410, so that the second sliding member 430 can be movable along the sidewall 411 of the stage body 410 in a first direction (e.g., X direction).

[0175] The second sliding member 430 further includes a track 432 coupled to the first portion 430A. The track 432 extends along the upper surface of the stage body 410 and extends in the second direction (e.g., the Y direction). In some embodiments, the first sliding member 420 is movably mounted on the track 432 of the second sliding member 430, so that the first sliding member 420 can be movable along the track 432 of the second sliding member 430 in the second direction (e.g., the Y direction).

[0176] The first sliding member 420 is further coupled to the wafer stage 415. Therefore, the wafer stage 415 is also coupled to the second sliding member 430 via the first sliding member 420. Therefore, with this configuration, the wafer stage 415 is movable on the upper surface of the stage body 410 along a plane (e.g., XY plane) constructed by a first direction (e.g., X direction) and a second direction (e.g., Y direction). For example, the wafer stage 415 can move along the first direction (e.g., X direction) when the second sliding member 430 is actuated to move along the slit 412 on the side wall 411 of the stage body 410, and can move along the second direction (e.g., Y direction) when the first sliding member 420 is actuated to move along the track 432 of the second sliding member 430.

[0177] Wafer stage 405 further includes a plurality of cables 440A, 440B, 440C, and 440D with tools. For example, each of cables 440A, 440B, 440C, and 440D may include: a plurality of pipes that supply pressurized dry air or vacuum air to wafer stage 415; pipes that supply and recover liquid for cooling a drive unit (not shown) inside wafer stage 415; and wires that transmit signals from a power source (not shown) and a controller (not shown) to wafer stage 415 and feed current from the power source and the controller to wafer stage 415. In some embodiments, a first side of cables 440A and 440B is connected to wafer stage 415, and a second side of cables 440A and 440B may be connected to a gas source, a liquid source, a power source, and / or a controller. In addition, the first sides of the cables 440C and 440D are connected to the second sliding member 430, and the second sides of the cables 440C and 440D can be connected to a gas source, a liquid source, a power source and / or a controller. In some other embodiments, the second sides of the cables 440A and 440B can be connected to the second sliding member 430, and connected to the first sides of the cables 440C and 440D via the second sliding member 430. In some embodiments, the cables 440A and 440B are substantially parallel to each other and extend along a second direction (e.g., the Y direction), and the cables 440C and 440D are substantially parallel to each other and extend along a first direction (e.g., the X direction).

[0178] In some embodiments, at least one bracket 460 is used to secure cables 440A and 440B together so that cable 440A can be movable with cable 440B. Similarly, at least one bracket 465 is used to secure cables 440C and 440D together so that cable 440C can be movable with cable 440D. In some embodiments, brackets 460 and 465 are also used to secure the conduits and / or wires of each of cables 440A, 440B, 440C, 440D so that the conduits and / or wires of each of cables 440A, 440B, 440C, 440D can be arranged neatly and in a desired order.

[0179] Fig. 6A FIG. 4 is a schematic diagram of a wafer stage of a lithography chamber according to some embodiments of the present disclosure. Figure 6B FIG. 4 is a schematic diagram of a leaf spring of a wafer stage of a lithography chamber according to some embodiments of the present disclosure. Figure 6C and Fig.6D Schematic diagram of a stopper of a wafer stage of a lithography chamber according to some embodiments of the present disclosure. It should be noted that Fig. 6A For Figure 5 Detailed views of the cables 440A and 440B in the wafer stage 405 are discussed in , and therefore the relevant details will not be repeated for the sake of brevity.

[0180] exist Fig. 6A , the first bracket 510 fixes the cables 440A and 440B together, and the second bracket 520 fixes the cables 440A and 440B together. With respect to the first bracket 510, the first bracket 510 includes at least wider portions 512 and narrower portions 514 alternately arranged along a first direction (e.g., X direction). For example, along a second direction (e.g., Y direction), the width of each wider portion 512 is greater than the width of each narrower portion 514. In some embodiments, each of the wider portions 512 includes a through hole for accommodating the cables 440A and 440B. In some embodiments, the narrower portions 514 are configured on opposite sides of each wider portion 512. At least one of the narrower portions 514 is between two wider portions 512, and thus this narrower portion 514 may also be referred to as a connecting portion between two wider portions 512. In some embodiments, the first bracket 510 and the second bracket 520 have substantially the same configuration, and thus the related details will not be repeated for the sake of brevity.

[0181] A plurality of leaf springs 530 are fixed to the first bracket 510 and the second bracket 520. In some embodiments, the leaf springs 530 are fixed to the first bracket 510 and the second bracket 520 by screws 535. Each leaf spring 530 is connected to the narrower portion of the first bracket 510 and the corresponding narrower portion of the second bracket 520. In some embodiments, each leaf spring 530 is a thin metal sheet and has sufficient flexibility. In some embodiments, the leaf springs 530 and the first bracket 510 and the second bracket 520 can be made of the same or similar metal, such as steel, stainless steel, or the like.

[0182] The frame 540 is disposed below the cables 440A and 440B and extends along the second direction (eg, the Y direction). Figure 5 and Fig. 6A , the frame 540 may extend horizontally to a position below the table body 410 of the wafer table 405, and may be fixed to the table body 410. In some embodiments, the frame 540 may be made of metal, such as steel, stainless steel, or the like. In some embodiments, the frame 540, the leaf spring 530, and the first bracket 510 and the second bracket 520 may be made of the same or similar materials.

[0183] The stopper 550 is disposed on the frame 540. In some embodiments, each stopper 550 is fixed to a respective frame 540. Each stopper 540 extends horizontally along the second direction (eg, the Y direction). Figure 5As discussed, the wafer stage 415 is movable along the upper surface of the stage body 410. When the wafer stage 415 moves in a direction toward the edge of the stage body 410 (for example, toward the side wall 411 of the stage body 410), the wafer stage 415 moves in a direction toward the edge of the stage body 410 (for example, toward the side wall 411 of the stage body 410). Figure 5 When the wafer stage 415 moves in the Y direction (in the Y direction), the cables 440A and 440B may be pushed in this direction, which will cause the first bracket 510 and the leaf spring 530 to move downward toward the frame 540. The stopper 550 above the frame 540 is used to "stop" the leaf spring 530 to limit the movement of the first bracket 510 and the leaf spring 530. In some embodiments, the stopper 550 and the leaf spring 530 are made of different materials. For example, the leaf spring 530 is made of metal, and the stopper 550 may be made of a polymer, such as polyetheretherketone (PEEK).

[0184] In some embodiments, each of the stoppers 550 includes a first portion 550A, a second portion 550B, and a third portion 550C. In some embodiments, the first portion 550A is connected to the second portion 550B, and a gap 550S is between the second portion 550B and the third portion 550C. In some embodiments, the first portion 550A is narrower than the second portion 550B and the third portion 550C along a first direction (e.g., X direction). This is beneficial because when the first bracket 510 moves downward toward the stopper 550, the narrower first portion 550A will be inserted into the space between the two screws 535.

[0185] The protective film 560 is disposed on the leaf spring 530, and the protective film 570 is disposed on the stopper 550. In some embodiments, each protective film 560 is disposed on a surface of the leaf spring 530 facing the corresponding stopper 550. Similarly, each protective film 570 is disposed on a surface of the stopper 550 facing the corresponding leaf spring 530.

[0186] exist Figure 6B In the embodiment of the present invention, the protective film 560 covers a portion of the surface of the leaf spring 530 while leaving a portion on the opposite side of the leaf spring 530 exposed. In more detail, several portions of the leaf spring 530 fixed by the screws 535 are covered by the protective film 560.

[0187] The protective film 560 has a length L1 and a width W1. In some embodiments, the length L1 is in a range from about 125 mm to about 130 mm, such as 128 mm. In some embodiments, the width W1 is in a range from about 17 mm to about 21 mm, such as 19 mm. If the length L1 and the width W1 are too small, the protective film 560 may not have enough area to cover the leaf spring 530. If the length L1 and the width W1 are too large, this may cause material waste and do not significantly improve performance.

[0188] exist Figure 6C In the embodiment, the protective film 570 includes a first portion 570A, a second portion 570B and a third portion 570C, wherein the first portion 570A, the second portion 570B and the third portion 570C are disposed on the first portion 550A, the second portion 550B and the third portion 550C of the stopper, respectively. That is, the gap 550S of the stopper 550 is not covered by the protective film 570.

[0189] The first portion 570A has a length LA and a width WA. In some embodiments, the length LA is in a range from about 8 mm to about 12 mm, such as 10 mm. In some embodiments, the width WA is in a range from about 3 mm to about 4 mm, such as 3.5 mm. The second portion 570B has a length LB and a width WB. In some embodiments, the length LB is in a range from about 118 mm to about 122 mm, such as 120 mm. In some embodiments, the width WB is in a range from about 14.5 mm to about 18.5 mm, such as 16.5 mm. The third portion 570C has a length LC and a width WC. In some embodiments, the length LC is in a range from about 58 mm to about 62 mm, such as 60 mm. In some embodiments, the width WC is in a range from about 14.5 mm to about 18.5 mm, such as 16.5 mm. If the lengths LA, LB, LC and the widths WA, WB, WC are too small, the protective film 570 may not have enough area to cover the stopper 550. If the lengths LA, LB, LC and the widths WA, WB, WC are too large, the protective film 570 is too large, which may cause material waste and does not significantly improve performance. In some embodiments, the first portion 570A is narrower than the second portion 570B and the third portion 570C, and the second portion 570B and the third portion 570C have substantially the same width.

[0190] exist Fig.6D In the embodiment, the protective film 570 may further include a fourth portion 570D covering the slit 550S of the stopper 550. That is, the entirety of the stopper 550 is covered by the protective film.

[0191] In some embodiments, the protective films 560 and 570 may be adhesive films detachable from the surfaces of the leaf spring 530 and the stopper 550, respectively, and may be made of a material different from the material of the leaf spring 530 and the stopper 550. In some embodiments, the protective films 560 and 570 may include a material having a friction coefficient of less than 0.3 and a tensile strength (at the breaking point) of greater than 48 MPa in a vacuum. In some embodiments, the protective films 560 and 570 may be ultrahigh molecular weight polyethylene (UHMWPE) strips. In some embodiments, the protective films 560 and 570 may be silicon pressure sensitive adhesives (PSA). In some embodiments, the protective films 560 and 570 can meet the requirement of zero (or negligibly small) detected in the Total Organic Carbon (TOC) test for the degassing limit of refractory materials at temperatures of about 40°C and about 100°C, which ensures that the protective films 560 and 570 will not decompose at the selected temperature and will not contaminate other structures in the lithography chamber 400.

[0192] Fig. 7A and Figure 7B FIG. 1 is a side view of a wafer stage of a lithography chamber according to some embodiments of the present disclosure. In more detail, Fig. 7A and Figure 7B The figure shows the structural relationship between the leaf spring 530 and the stopper 550 in different states.

[0193] See also Figure 5 and Fig. 7A , Fig. 7A The wafer stage 415 is shown in a first state at a first position away from an edge of the stage body 410 (e.g., an edge where the side wall 411 is located). For example, in order to reach the first position, the wafer stage 415 may be moved toward the +Y direction by moving the first slide member 420 along the rail 432 of the second slide member 430 toward the +Y direction. As a result, the cable 440A (or the cable 440B) is pulled inward, so that the first bracket 510 and the second bracket 520 may be lifted together with the cable 440A. As a result, the first bracket 510 and the second bracket 520 are spaced apart from the stopper 550, and the leaf spring 530 does not contact the stopper 550. In more detail, the protective film 560 on the leaf spring 530 is separated from the protective film 570 on the stopper 550 in the first state.

[0194] See also Figure 5 and Figure 7B , Figure 7BThe wafer stage 415 is shown in a second state at a second position close to an edge of the stage body 410 (e.g., an edge where the side wall 411 is located). For example, to reach the second position, the wafer stage 415 can be moved by moving the first slide member 420 along the track 432 of the second slide member 430 toward the -Y direction. Fig. 7A 4. The first position discussed in the foregoing description is moved toward the -Y direction. Therefore, the cable 440A (or the cable 440B) is pushed outward, so that the first bracket 510 and the second bracket 520 can be lowered together with the cable 440A. As a result, the first bracket 510 and the second bracket 520 are close to the stopper 550, and the leaf spring 530 contacts the stopper 550. In more detail, the protective film 560 on the leaf spring 530 contacts the protective film 570 on the stopper 550 in the second state. In some embodiments, the second bracket 520 can be inserted into the slit 550S of the stopper 550. As mentioned above, because the first portion 550A of the stopper 550 has a narrow width, the screw 535 on the first bracket 510 can bypass the first portion 550A of the stopper 550 and will not directly hit the first portion 550A of the stopper 550.

[0195] In some embodiments, because the protective films 560 and 570 are disposed on the leaf spring 530 and the stopper 550, the leaf spring 530 is Figure 7B In the second state of the stopper 550, there will be no direct contact with the stopper 550. In this configuration, particles generated in the chamber can be reduced by preventing direct friction or collision between the leaf spring 530 and the stopper 550. Therefore, the wafer stage cleaning period can be extended. In addition, because the particles are reduced, the wafer fall (which is determined by the wafer fall on the particle monitor) regarding the particle count can be reduced.

[0196] In some embodiments, one of the protective films 560 and 570 may be omitted. For example, if the protective film 560 is omitted and the protective film 570 exists, the leaf spring 530 is Figure 7B In the second state, the stopper 550 will be in direct contact with the protective film 570. On the other hand, if the protective film 570 is omitted and the protective film 560 exists, the stopper 550 will be in direct contact with the protective film 570. Figure 7B In the second state, the protective film 560 will be in direct contact with the protective film 560.

[0197] Figure 8 Schematic diagram of a wafer stage of a lithography chamber according to some embodiments of the present disclosure. It should be noted that Figure 8 For Figure 5 Detailed views of cables 440C and 440D in wafer stage 405 are discussed in , and therefore the relevant details will not be repeated for brevity.

[0198] exist Figure 8 In FIG. 4 , a plurality of brackets 610 secure cables 440C and 440D together. Fig. 6A Each of the brackets 610 may include alternately arranged wider portions and narrower portions. Fig. 6A 6, and the roller structures 630 are disposed on opposite sides of each of the brackets 610. In more detail, each roller structure 630 includes a main body 632, and two wheels 634 disposed on opposite sides of the main body 632.

[0199] The wafer table 405 further includes rail guides 640, wherein two rail guides 640 are disposed on opposite sides of each bracket 610. In some embodiments, each of the roller structures 630 is movable along the surface of the corresponding rail guide 640, wherein the rail guide 640 is capable of limiting the movement of the respective roller structure 630 and the bracket 610. In some embodiments, the rail guide 640 may include a curved shape. In some embodiments, the rail guide 640 may be made of metal, such as steel, stainless steel, or the like.

[0200] The wafer stage 405 further includes a stopper plate 645 disposed above the rail guide block 640. In some embodiments, the stopper plate 645 extends along a first direction (e.g., X direction) and is coupled to the end of the rail guide block 640. In some embodiments, the stopper plate 645 may be a thin metal sheet and be sufficiently flexible. In some embodiments, the stopper plate 645 may be made of a metal such as steel, stainless steel, or aluminum. In some other embodiments, the stopper plate 645 may be made of a polymer such as polyetheretherketone (PEEK).

[0201] The protective film 660 is disposed on the surface of the rail guide block 640 facing the corresponding roller structure 630. In some embodiments, the surface of the rail guide block 640 away from the corresponding roller structure 630 is not covered by the protective film 660. In some other embodiments, the surface of the rail guide block 640 away from the corresponding roller structure 630 may also be covered by the protective film.

[0202] The protective film 670 is disposed on the surface of the main body 632 of the roller structure 630 away from the corresponding rail guide block 640. In some embodiments, each protective film 670 covers the middle portion of the main body 632 of the corresponding roller structure 630, while the opposite side of the main body 632 connected to the wheel 634 is not covered by the protective film 670. In some embodiments, the surface of the main body 632 of the roller structure 630 facing the corresponding rail guide block 640 is not covered by the protective film 670 as a whole.

[0203] In some embodiments, the protective films 660 and 670 may be adhesive films that are detachable from the surfaces of the rail guide block 640 and the roller structure 630, respectively, and may be made of a material different from the material of the rail guide block 640 and the roller structure 630. In some embodiments, the protective films 660 and 670 may include a material having a friction coefficient less than 0.3 and a tensile strength greater than 48Mpa in a vacuum (at the breaking point). In some embodiments, the protective films 660 and 670 may be ultra high molecular weight polyethylene (UHMWPE) strips. In some other embodiments, the protective films 660 and 670 may be silicon pressure sensitive adhesives (PSA). In some embodiments, the protective films 660 and 670 can meet the requirement of zero (or negligibly small) detected by the Total Organic Carbon (TOC) test for the degassing limit of refractory materials at temperatures of about 40°C and about 100°C, which ensures that the protective films 660 and 670 will not decompose at the selected temperature and will not contaminate other structures in the lithography chamber 400.

[0204] Fig. 9A and Fig. 9B FIG. 1 is a side view of a wafer stage of a lithography chamber according to some embodiments of the present disclosure. In more detail, Fig. 9A and Fig. 9B The figure shows the structural relationship between the roller structure 630 and the rail guide block 640 in different states.

[0205] See also Figure 5 and Fig. 9A , Fig. 9A The wafer stage 415 is shown in a first state in the first position. For example, in order to reach the first position, the wafer stage 415 may be moved toward the -X direction by moving the second slide member 430 along the slit 412 of the stage body 410 toward the -X direction. As a result, the cable 440C (or the cable 440D) is pulled upward, so that the bracket 610 and the roller structure 630 may be lifted together with the cable 440C. In the first state, the roller structure 630 moves upward along the surface of the rail guide block 640 and may stop at the top portion of the rail guide block 640.

[0206] See also Figure 5 and Fig. 9B , Fig. 9BThe wafer stage 415 is shown in a second state in the second position. For example, in order to reach the second position, the wafer stage 415 may be moved toward the +X direction by moving the second slide member 430 along the slit 412 of the stage body 410 toward the +X direction. As a result, the cable 440C (or the cable 440D) is pushed downward, so that the bracket 610 and the roller structure 630 may be lifted together with the cable 440C. In the second state, the roller structure 630 moves downward along the surface of the rail guide block 640 and may stop at the top portion of the rail guide block 640.

[0207] The roller structure 630 can move up and down along the surface of the rail guide block 640. Because the protective film 660 is disposed on the surface of the rail guide block 640. The roller structure 630 can contact the protective film 660 during the movement. In this configuration, particles generated in the chamber can be reduced by preventing direct friction or collision between the roller structure 630 and the rail guide block 640. Therefore, the wafer stage cleaning period can be extended. In addition, because the particles are reduced, the wafer drop (which is determined by the wafer drop on the particle monitor) regarding the particle count can be reduced.

[0208] Fig.10 A method M1 of forming a semiconductor device according to some embodiments of the present disclosure is illustrated. Although method M1 is illustrated and / or described as a series of actions or events, it should be understood that the method is not limited to the illustrated order or actions. Therefore, in some embodiments, the actions may be performed in a different order than illustrated, and / or may be performed simultaneously. In addition, in some embodiments, the illustrated actions or events may be subdivided into multiple actions or events that are performed at independent times or simultaneously with other actions or sub-actions. In some embodiments, some of the illustrated actions or events may be omitted, and other unillustrated actions or events may be included.

[0209] In step S101, a wafer is transferred to a lithography chamber. Figure 2 As discussed in the foregoing, wafer 250 may be moved from wafer handler 260 to micro-imager 271 via load locks 264, 265 and wafer exchange chamber 266. In some embodiments, when wafer 250 is moved from one space (e.g., a chamber) to another space (e.g., a chamber), wafer 250 may pass through corresponding gate valve assemblies (e.g., gate valve assemblies 262, 263, 267, 268, and 270) between two spaces (e.g., two chambers).

[0210] See also Figure 4A and Figure 4BGenerally speaking, after the wafer 250 passes through the gate valve assembly 262, the gate valve assembly 262 is "closed", wherein the gate 330 is pressed against the protective film 340 on the gate valve seat 310 to seal the opening 312 of the gate valve assembly. However, when the wafer 250 is about to pass through the gate valve assembly 262, the gate valve assembly 262 can be "opened" to allow the wafer 250 to pass through. Figure 4A As shown in FIG. 8 , the gate 330 moves downward away from the protective film 340 on the gate valve seat 310 to reveal the opening 312 of the gate valve seat 310 .

[0211] At step S102, the wafer stage moves to a first position to receive the wafer. At step S103, the wafer stage moves to a second position where the wafer undergoes a lithography process. In some embodiments, after the wafer 250 is received by the wafer stage, the gate valve assembly 262 may be "closed" again, wherein the gate 330 moves upward to press against the protective film 340 on the gate valve seat 310 to seal the opening 312 of the gate valve assembly (see FIG. 4 and FIG. 5 ). Figure 4B ).

[0212] From step S102 to step S103, the wafer stage may move above the upper surface of the wafer stage body. Figure 5 As discussed in , the wafer stage 415 can be moved along a first direction (eg, X direction) and a second direction (eg, Y direction) by moving the second sliding member 430 and the first sliding member 420, respectively.

[0213] like Fig. 7A and Figure 7B As discussed in , when the wafer stage 415 reciprocates along the second direction (eg, the Y direction), the protective films 560 and 570 may alternately touch each other and then separate from each other. The details are described in Fig. 7A and Figure 7B and therefore the related description will not be repeated for simplicity.

[0214] like Fig. 9A and Fig. 9B As discussed in , when the wafer stage 415 reciprocates along a first direction (eg, X direction), the roller structure 630 may move up and down along the protective film 660 on the rail guide block 640. The details are in Fig. 9A and Fig. 9B and therefore the related description will not be repeated for simplicity.

[0215] In step S104 , a lithography process is performed on the wafer. Figure 1 An example of a lithography process corresponding to the action in step S101 is shown.

[0216] Fig.11A method M2 of forming a semiconductor device according to some embodiments of the present disclosure is illustrated. Although method M2 is illustrated and / or described as a series of actions or events, it should be understood that the method is not limited to the illustrated order or actions. Therefore, in some embodiments, the actions may be performed in a different order than illustrated, and / or may be performed simultaneously. In addition, in some embodiments, the illustrated actions or events may be subdivided into multiple actions or events that are performed at independent times or simultaneously with other actions or sub-actions. In some embodiments, some of the illustrated actions or events may be omitted, and other unillustrated actions or events may be included.

[0217] In step S201, a wafer is transferred into a lithography chamber. In step S202, a lithography process is performed on the wafer. In step S203, the wafer is transferred out of the lithography chamber.

[0218] At step S204, it is determined whether the surface condition of the protective film in the wafer stage is acceptable. In some embodiments, the protective film may be Figures 3 to 4B The protective film 340 discussed in 6A to 7B The protective films 560 and 570 discussed in Figures 8 to 9B It should be noted that the protective films 340, 560, 570, 660 and 670 of the embodiments may be made of the same material.

[0219] In some embodiments, the user can determine whether the contaminants on the surface of the protective film exceed a threshold value. In some embodiments, the threshold value may include the number of particles dropped on the surface of the protective film. In some other embodiments, the threshold value may include the ratio of the contamination area on the surface of the protective film to the entire area of ​​the surface of the protective film. In some other embodiments, the threshold value may include the number of scratches on the surface of the protective film.

[0220] If the surface condition of at least one of the protective films in the wafer stage does not exceed the threshold value (eg, the condition is acceptable), method M2 then returns to step S201 and continues to perform operations S202 to S203 .

[0221] However, if the surface condition of the protective film in the wafer stage exceeds the threshold value (eg, the condition is unacceptable), method M2 proceeds to step S205 where the protective film is replaced with a new protective film. In some embodiments, replacing the protective film with a new protective film may be performed manually.

[0222] If the protective film is Figure 4A and Figure 4B If the protective film 340 discussed in the above is removed, the protective film 340 can be peeled off from the surface of the gate valve seat 310, and then a new protective film 340 can be attached to the surface of the gate valve seat 310. 6A to 7B If the protective film 560 discussed in , the protective film 560 can be peeled off from the surface of the leaf spring 530, and then a new protective film 560 can be attached to the surface of the leaf spring 530. 6A to 7B If the protective film 570 discussed in the above is removed, the protective film 570 can be peeled off from the surface of the stopper 550, and then a new protective film 570 can be attached to the surface of the stopper 550. Figures 8 to 9B If the protective film 660 discussed in the above is removed, the protective film 660 can be peeled off from the surface of the track guide block 640, and then a new protective film 660 can be attached to the surface of the track guide block 640. Figures 8 to 9B If the protective film 670 discussed in , the protective film 670 can be peeled off from the surface of the drum structure 630 , and then a new protective film 670 can be attached to the surface of the drum structure 630 .

[0223] According to the aforementioned embodiments, it can be seen that the present disclosure provides advantages in manufacturing semiconductor devices. However, it should be understood that other embodiments may provide additional advantages, and not all advantages are necessarily disclosed herein, and no specific advantages are required for all embodiments. One advantage is that the protective film is used to cover the surfaces of several structures in the lithography chamber, and the surfaces of the structures can be protected during the execution of the lithography process. In this configuration, the particles generated in the chamber can be reduced by preventing direct friction or collision between structures. Therefore, the wafer stage cleaning period can be extended by improving the available time (available time, AVL) of the wafer path cleaning (PM) by 50%. On the other hand, because the particles are reduced, the wafer drop (which is determined by the wafer drop on the particle monitor) with respect to the particle count can be reduced to about 0.6ea to about 0.7ea. Another advantage is that the protective film can be inexpensive and replaceable, easy to apply to a wide area of ​​the lithography chamber, and can reduce the cost of the cleaning process. Another advantage is that the particle generation rate on the protective film is low, which will also extend the cleaning period of the lithography chamber.

[0224] According to some embodiments of the present disclosure, a method includes transferring a wafer above a wafer carrier on a wafer table. The wafer table includes a main body, a wafer carrier, a first sliding component, a second sliding component, a first cable, a first bracket and a second bracket, and a stopper. The wafer carrier is movably disposed above the main body. The first sliding component is coupled to the wafer carrier. The second sliding component is coupled to an edge of the main body, and the second sliding component is movable along a first direction, wherein the first sliding component is coupled to a track of the second sliding component, and the first sliding component is movable along a second direction perpendicular to the first direction. The first cable is coupled to the wafer carrier and extends along the second direction. The first bracket and the second bracket fix the first cable, and the first bracket and the second bracket are connected by a leaf spring. The stopper is disposed below the first cable. The method includes moving the wafer stage toward the edge of the stage body so that the wafer stage pushes the first cable outward, causing the leaf spring to move toward a first protective film on a surface of the stopper facing the leaf spring. In some embodiments, the step of moving the wafer stage toward the edge of the stage body is performed so that the first protective film is in direct contact with a second protective film on a surface of the leaf spring facing the stopper. In some embodiments, the step of moving the wafer stage toward the edge of the stage body is performed so that the second bracket moves downward into a gap of the stopper, and the gap of the stopper is not covered by the first protective film. In some embodiments, the step of moving the wafer stage toward the edge of the stage body is performed so that the second bracket moves downward into a gap of the stopper, and a surface of the gap of the stopper is covered by the first protective film. In some embodiments, the wafer stage further includes a second cable, a third bracket, and a rail guide block. The second cable is coupled to the second sliding member and extends along the first direction. The third bracket fixes the second cable, and the third bracket is coupled to a roller structure, wherein the roller structure includes a main body and a wheel coupled to the main body. The roller structure is movable along a surface of the rail guide block. The method includes moving the wafer stage along the first direction so that the roller structure moves along a second protective film on a surface of the rail guide block. In some embodiments, a third protective film is disposed on the main body of the roller structure. In some embodiments, the method further includes the steps of: determining whether a surface condition of the first protective film is acceptable; and replacing the first protective film with a new first protective film in response to the determination that the surface condition is unacceptable. In some embodiments, a surface of the leaf spring facing the stopper is not covered with a protective layer. In some embodiments, the first protective film is made of ultra-high molecular weight polyethylene (UHMWPE) strips and silicone pressure sensitive adhesive (PSA).

[0225] According to some embodiments of the present disclosure, a method includes the steps of transferring a wafer to a first chamber of a load lock, the first chamber coupled to a gate valve assembly having a gate valve seal and a gate pressed against a protective film on a surface of the gate valve seal; moving the gate downward away from the protective film on the surface of the gate valve seal to reveal an opening of the gate valve seal; transferring the wafer from the first chamber to a second chamber through the opening of the gate valve seal; and performing a semiconductor process on the wafer in the second chamber. In some embodiments, the method further includes the steps of determining whether a surface condition of the protective film is acceptable after performing the semiconductor process on the wafer; and replacing the protective film with a new protective film in response to the determination that the surface condition is unacceptable. In some embodiments, the step of replacing the protective film with the new protective film includes the steps of peeling the protective film from the surface of the gate valve seal; and attaching the new protective film on the surface of the gate valve seal. In some embodiments, the method further comprises the following steps: after transferring the wafer from the first chamber to the second chamber and before performing the semiconductor process, moving the gate upward to press a sealing material of the gate against the protective film on the surface of the gate valve seal again. In some embodiments, when the sealing material of the gate is pressed against the protective film, an entirety of the surface of the gate valve seal is separated from the sealing material of the gate by the protective film. In some embodiments, the protective film is made of ultra-high molecular weight polyethylene (UHMWPE) tape and silicon pressure sensitive adhesive (PSA).

[0226] According to some embodiments of the present disclosure, a lithography system includes a main body, a wafer carrier, a first sliding component, a second sliding component, a first cable, a first bracket, a rail guide block and a first protective film. The wafer carrier is movably disposed above the main body. The first sliding component is coupled to the wafer carrier. The second sliding component is coupled to an edge of the main body of the table, and the second sliding component is movable along a first direction, wherein the first sliding component is coupled to a track of the second sliding component, and the first sliding component is movable along a second direction perpendicular to the first direction. The first cable is coupled to the second sliding component and extends along the first direction. The first bracket fixes the first cable, and the first bracket is coupled to a roller structure, wherein the roller structure includes a main body and a wheel coupled to the main body. The rail guide block limits a movement of the wheel of the roller structure. The first protective film is adhered to a surface of the rail guide block, wherein the roller structure is movable along the first protective film on the surface of the rail guide block. In some embodiments, the body of the roller structure has a surface away from the surface of the rail guide block, and the surface of the body of the roller structure is covered by a first protective film. In some embodiments, the lithography system further includes a second cable, a second bracket and a third bracket, and a stopper. The second cable is coupled to the wafer stage and extends along the second direction. The second bracket and the third bracket fix the first cable, and the second bracket and the third bracket are connected by a leaf spring. The stopper is disposed below the first cable, wherein the stopper has a surface facing the leaf spring, and the surface of the stopper is covered by a second protective film. In some embodiments, the second protective film has a first portion, a second portion, and a third portion, the first portion is connected to the second portion, and the third portion is separated from the second portion by a gap of the stopper, wherein the first portion is narrower than the second portion and the third portion. In some embodiments, the lithography system further includes a gate valve assembly, the gate valve assembly having a gate valve seal, a gate, and a second protective layer. The gate is detachably coupled to the gate valve seal, wherein the gate includes a sealing material that is pressed against a surface of the gate valve seal. The second protective layer covers the surface of the gate valve seal.

[0227] The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art will appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for implementing the same purposes and / or achieving the same advantages of the embodiments introduced herein. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and such equivalent constructions may be variously modified, substituted, and replaced herein without departing from the spirit and scope of the present disclosure.

Claims

1. A method for forming a semiconductor device, characterized in that: Include: A wafer is transferred above a wafer stage on a wafer stage, the wafer stage comprising: A main body, the wafer stage is movably arranged above the main body; a first sliding component, the first sliding component coupled to the wafer stage; a second sliding component, the second sliding component is coupled to an edge of the table body, the second sliding component is movable along a first direction, wherein the first sliding component is coupled to a track of the second sliding component, the first sliding component is movable along a second direction perpendicular to the first direction; a first cable coupled to the wafer stage and extending along the second direction; A first bracket and a second bracket for fixing the first cable, wherein the first bracket and the second bracket are connected via a leaf spring; as well as a stopper disposed below the first cable; as well as The wafer stage is moved toward the edge of the stage body so that the wafer stage pushes the first cable outward, causing the leaf spring to move toward a first protective film on a surface of the stopper facing the leaf spring.

2. The method according to claim 1, characterized in that The step of moving the wafer stage toward the edge of the stage body is performed so that the first protection film is in direct contact with a second protection film on a surface of the leaf spring facing the stopper.

3. The method according to claim 1, characterized in that The step of moving the wafer stage toward the edge of the stage body is performed so that the second bracket moves downward into a gap of the stopper, and the gap of the stopper is not covered by the first protective film.

4. The method according to claim 1, characterized in that The step of moving the wafer stage toward the edge of the stage body is performed so that the second bracket moves downward into a gap of the stopper, and a surface of the gap of the stopper is covered by the first protective film.

5. The method according to claim 1, characterized in that The wafer stage further comprises: a second cable coupled to the second sliding member and extending along the first direction; a third bracket for fixing the second cable, the third bracket being coupled to a roller structure, wherein the roller structure comprises a main body and a wheel coupled to the main body; as well as A rail guide block, wherein the roller structure is movable along a surface of the rail guide block; and The method further includes moving the wafer stage along the first direction so that the roller structure moves along a second protective film on a surface of the rail guide block.

6. The method according to claim 5, characterized in that A third protective film is disposed on the main body of the roller structure.

7. The method according to claim 1, characterized in that Further including: determining whether a surface condition of the first protective film is acceptable; and In response to the determining that the surface condition is unacceptable, the first protective film is replaced with a new first protective film.

8. The method according to claim 1, characterized in that A surface of the leaf spring facing the stopper is not covered with a protective layer.

9. The method according to claim 1, characterized in that The first protective film is made of ultra-high molecular weight polyethylene strip and silicon pressure-sensitive adhesive.

10. A method for forming a semiconductor device, characterized in that: Include: Transferring a wafer into a first chamber of a load lock, the first chamber coupled to a gate valve assembly having a gate valve seal and a gate pressed against a first protective film on a surface of the gate valve seal; Moving the gate downward away from the first protective film on the surface of the gate valve seal to reveal an opening of the gate valve seal; transferring the wafer from the first chamber to a second chamber through the opening of the gate valve seal; The wafer is transferred above a wafer stage on a wafer stage of the second chamber, wherein a first cable is coupled to the wafer stage, the first cable is fixed by a first bracket and a second bracket connected by a leaf spring, a stopper is disposed under the first cable, and when the wafer stage is moved to push the first cable, the leaf spring moves toward a second protective film on a surface of the stopper facing the leaf spring; as well as A semiconductor process is performed on the wafer in the second chamber.

11. The method according to claim 10, characterized in that Further including: After performing the semiconductor process on the wafer, determining whether a surface condition of the first protection film is acceptable; and In response to the determining that the surface condition is unacceptable, the first protective film is replaced with a new protective film.

12. The method according to claim 11, characterized in that The step of replacing the first protective film with the new protective film comprises: peeling the first protective film from the surface of the gate valve seal; and The new protective film is attached to the surface of the gate valve seal.

13. The method according to claim 10, characterized in that Further including: After transferring the wafer from the first chamber to the second chamber and before performing the semiconductor process, the gate is moved upward to press a sealing material of the gate against the first protective film on the surface of the gate valve seal again.

14. The method according to claim 13, characterized in that When the sealing material of the gate is pressed against the first protective film, an entirety of the surface of the gate valve seal is separated from the sealing material of the gate by the first protective film.

15. The method according to claim 10, characterized in that The first protective film is made of ultra-high molecular weight polyethylene strip and silicon pressure-sensitive adhesive.

16. A lithography system, characterized in that: Include: A main body; a wafer stage, which is movably disposed above the stage body; a first sliding component, the first sliding component coupled to the wafer stage; A second sliding component coupled to an edge of the table body, the second sliding component being movable along a first direction, wherein the first sliding component is coupled to a track of the second sliding component, the first sliding component being movable along a second direction perpendicular to the first direction; a first cable coupled to the second sliding member and extending along the first direction; a first bracket for fixing the first cable, the first bracket being coupled to a roller structure, wherein the roller structure comprises a main body and a wheel coupled to the main body; a rail guide block that limits a movement of the wheel of the roller structure; and A first protective film is adhered to a surface of the track guide block, wherein the roller structure is movable along the first protective film on the surface of the track guide block.

17. The lithography system according to claim 16, wherein: The main body of the roller structure has a surface away from the surface of the rail guide block, and the surface of the main body of the roller structure is covered by a first protective film.

18. The lithography system according to claim 16, wherein: Further including: a second cable coupled to the wafer stage and extending along the second direction; A second bracket and a third bracket for fixing the first cable, the second bracket and the third bracket being connected via a leaf spring; as well as A stopper is disposed under the first cable, wherein the stopper has a surface facing the leaf spring, and the surface of the stopper is covered by a second protective film.

19. The lithography system according to claim 18, wherein: The second protective film has a first portion, a second portion and a third portion, the first portion is connected to the second portion, and the third portion is separated from the second portion by a gap of the stopper, wherein the first portion is narrower than the second portion and the third portion.

20. The lithography system of claim 16, wherein: Further comprising a gate valve assembly, the gate valve assembly comprising: a gate valve seal; a gate detachably coupled to the gate valve seal, wherein the gate comprises a sealing material pressed against a surface of the gate valve seal; and A second protective layer covers the surface of the gate valve seal.

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