Protective film, method for pasting same, and method for manufacturing semiconductor component

Abstract

The present invention provides a method for pasting a protective film, a method for manufacturing a semiconductor component, and a protective film used in the pasting method. The protective film can suppress the occurrence of defects caused by steps on the main surface of a semiconductor wafer. The pasting method includes: a placement step of placing the protective film (20) so as to cover the main surface (10A) of the semiconductor wafer (10); and a pasting step of pressing and pasting the protective film (20) onto the main surface (10A). The main surface (10A) has a first region (12) and a second region (13). The first region (12) is provided with bumps (11), and the second region (13) is a region including at least a part of the periphery of the main surface (10A) and is a region where no bumps (11) are provided. The pasting step includes a compressing step of compressing the protective film (20) in its thickness direction. The compressing step is performed using a pressing member (32) for pressing the protective film (20) against the main surface (10A) and a support member (33) provided along the outer periphery of the second region (13).

Description

Technical Field

[0001] The present invention relates to a protective film adhered to the main surface of a semiconductor wafer when manufacturing a semiconductor component from the semiconductor wafer, a method of adhering the same, and a method of manufacturing a semiconductor component including the method of adhering the protective film. Background Art

[0002] Regarding a semiconductor wafer, when the surface on which a circuit or the like is formed is defined as the main surface and the surface on the opposite side of the main surface is defined as the back surface, during the manufacture of a semiconductor component, the back surface is ground in a back grinding process to obtain a desired thickness. This back grinding process is performed by adhering a protective film to the main surface of the semiconductor wafer and adsorbing and fixing the main surface to a chuck table or the like through the protective film.

[0003] The protective film generally has a base layer and an adhesive material layer. As a general method of adhering such a protective film, the following method is adopted: after disposing the protective film on the main surface of the semiconductor wafer such that the adhesive material layer contacts the main surface, a predetermined force is applied to the base layer using a sticking roller or the like to press the adhesive material layer against the main surface.

[0004] In recent years, for many semiconductor wafers, due to the requirement for high density of semiconductor components, bumps, microelectromechanical systems (MEMS) are provided on the main surface, so that the main surface becomes uneven. When the above-described general method of adhering a protective film is adopted for such an uneven main surface, the surface of the protective film pressed against the main surface becomes uneven following the unevenness of the main surface, and various problems occur. Therefore, as a protective film, an unevenness absorbing resin layer, a step absorbing layer, etc. are provided to improve the unevenness followability, thereby making it difficult for the surface to become uneven (see Patent Document 1).

[0005] Prior Art Documents

[0006] Patent Documents

[0007] Patent Document 1: Japanese Patent Application Laid-Open No. 2000-17239 Summary of the Invention

[0008] Problems to be Solved by the Invention

[0009] In the above-described semiconductor wafer, bumps or the like are not necessarily provided over the entire area of the main surface. That is, in a semiconductor wafer, there are wafers having two regions: an uneven region on the main surface where bumps or the like are provided and a flat region where bumps or the like are not provided.

[0010] For example, as a semiconductor wafer, there are wafers in which a region where no bumps are disposed is intentionally provided at the peripheral portion of the main surface for the purpose of imprinting a serial number, a manufacturing number, etc. (see Figure 1 "Reference Numeral 13B" in (a)).

[0011] Moreover, on the main surface of the semiconductor wafer described above, a step with the uneven region being higher and the flat region being lower is generated between the uneven region and the flat region.

[0012] Figure 8 It is an explanatory diagram when the protective film 20 is pasted on the semiconductor wafer 10 having the above-mentioned step on the main surface 10A by a general pasting method.

[0013] The protective film 20 has a resin volume amount (hereinafter, also referred to as "film thickness amount") sufficient or more for absorbing the unevenness caused by the bumps 11 in the first region 12 through the unevenness absorption layer 23, but the film thickness amount is not sufficient to fill the step between the first region 12 and the second region 13, and sometimes the step cannot be completely filled.

[0014] In particular, the size (the area occupied on the main surface 10A) of the second region 13 provided on the main surface 10A for the above-mentioned purposes such as engraving serial numbers and manufacturing numbers is also large. In order to fill the step in the entire second region 13 of this size, the film thickness amount of the protective film 20 is significantly insufficient.

[0015] In addition, as Figure 8 shown by the arrow in, the film thickness portion (unevenness absorption layer 23) of the protective film 20 flows in a manner that escapes more to the outside than the peripheral edge of the main surface 10A of the semiconductor wafer 10, but the general pasting method does not have a means to restrict the flow of such a film thickness portion.

[0016] Therefore, since the film thickness amount of the protective film 20 is not sufficient to fill the step in the second region 13, defects 24 such as depressions and dents imitating the step are formed on the surface of the protective film 20.

[0017] When adsorbing and fixing the main surface in the aforementioned back grinding process, at the portion of the defect 24, the protective film 20 becomes a state of floating from the chuck table, and the vacuum is likely to be broken. Therefore, a vacuum error, that is, poor adsorption of the semiconductor wafer to the chuck table, may occur in the back grinding process.

[0018] In addition, even when no vacuum error occurs, the protective film 20 becomes a state of floating from the chuck table at the portion of the defect 24 and cannot sufficiently support the external force applied from the back side when performing the back grinding process. Therefore, cracks, fractures, or microcracks invisible to the naked eye may occur in the semiconductor wafer after performing the back grinding process.

[0019] As described above, for the steps formed on the main surface of a semiconductor wafer, even when using a protective film provided with an uneven-absorbing resin layer or the like, they cannot be filled in by the conventional method of attaching the protective film. Therefore, there are problems such as the formation of depressions, dents, etc. imitating the steps on the surface of the protective film, and the occurrence of vacuum errors, cracks, etc. during the back grinding process.

[0020] The present invention has been completed in view of the above problems, and provides a protective film, a method for attaching the same, and a method for manufacturing a semiconductor component, which can suppress the occurrence of defects caused by the steps on the main surface of a semiconductor wafer.

[0021] Means for Solving the Problem

[0022] As a means for solving the above problems, the present invention is as follows.

[0023] [1] The gist of the method for attaching a protective film according to the first aspect is to include:

[0024] a placement step of placing a protective film so as to cover the main surface of a semiconductor wafer; and

[0025] a pasting step of pressing and pasting the protective film onto the main surface,

[0026] the main surface has a first region and a second region, the first region is provided with bumps, and the second region is a region including at least a part of the periphery of the main surface and is a region where no bumps are provided,

[0027] the pasting step includes a compressing step of compressing the protective film in its thickness direction,

[0028] the compressing step is performed using a pressing member for pressing the protective film onto the main surface and a support member provided along the outer periphery of the second region.

[0029] [2] In the method for attaching a protective film according to the first aspect, it may be that: the placement step is a step of placing the protective film such that the edge portion of the protective film extends outward from the periphery of the second region,

[0030] the compressing step is a step of supporting the edge portion by the support member and sandwiching the edge portion between the support member and the pressing member, thereby compressing the edge portion.

[0031] [3] In the method for attaching a protective film according to the first aspect, it may be that: in the support member, the support surface for supporting the edge portion of the protective film is parallel to the main surface or is inclined toward the main surface side.

[0032] [4] In the method of pasting the protective film of the first aspect, it may be: when the gap between the main surface of the semiconductor wafer and the pressing surface of the pressing member is set to C 1 , and the gap between the supporting surface of the supporting member and the pressing surface of the pressing member is set to C 2 , C 1 > C 2 .

[0033] [5] In the method of pasting the protective film of the first aspect, it may be: the arranging step is a step of arranging the protective film in such a manner that the edge portion of the protective film is located on the inner peripheral side of the supporting member, and the compressing step is a step of blocking the bulging of the protective film in the outer peripheral direction of the second region due to being sandwiched between the pressing member and the main surface by the inner peripheral surface of the supporting member, and compressing the edge portion by the pressing member, the inner peripheral surface of the supporting member, and the main surface.

[0034] [6] In the method of pasting the protective film of the first aspect, the protective film may have a layer capable of exhibiting fluidity or plasticity.

[0035] [7] In the method of pasting the protective film of the first aspect, the compressing step may be performed in a state where the protective film is heated to exhibit the fluidity or the plasticity.

[0036] [8] In the method of pasting the protective film of the first aspect, it may be: when the average height of the bump is set to H1 and the average thickness of the protective film is set to H2, 0.5 ≤ H2 / H1.

[0037] [9] The gist of the method for manufacturing a semiconductor component of the second aspect is to include the method of pasting the protective film of the first aspect.

[0038]

[10] The gist of the protective film of the third aspect is for the method of pasting the protective film of the first aspect.

[0039]

[11] The gist of the method of pasting the protective film of the fourth aspect is to include:

[0040] A processing step of processing the protective film to obtain a processed film;

[0041] An arranging step of arranging the processed film so as to cover the main surface of the semiconductor wafer; and

[0042] A pasting step of pressing and pasting the processed film onto the main surface,

[0043] The main surface has a first region and a second region. The first region is provided with bumps, and the second region is a region including at least a part of the periphery of the main surface and is a region where no bumps are provided.

[0044] The processing step is a step of forming parts with different thicknesses on the protective film to obtain the processed film.

[0045] The arranging step is a step of arranging the relatively thick region among the parts with different thicknesses of the processed film corresponding to the second region.

[0046]

[12] In the method for pasting the protective film according to the fourth aspect, the protective film may have a layer capable of exhibiting fluidity or plasticity.

[0047]

[13] In the method for pasting the protective film according to the fourth aspect, the processing step may be performed in a state where the protective film is heated to exhibit the fluidity or the plasticity.

[0048]

[14] In the method for pasting the protective film according to the fourth aspect, it may be that when the average height of the bumps is set to H1 and the average thickness of the protective film is set to H2, 0.5 ≤ H2 / H1.

[0049]

[15] The gist of the method for manufacturing a semiconductor component according to the fifth aspect is to include the method for pasting the protective film according to the fourth aspect.

[0050]

[16] The gist of the protective film according to the sixth aspect is for the method for pasting the protective film according to the fourth aspect.

[0051] Advantages of the Invention

[0052] According to the method for pasting the protective film according to the first aspect and the fourth aspect, when there are steps on the main surface of the semiconductor wafer due to the presence or absence of bumps, the protective film can be pasted in a manner that suppresses or eliminates the steps. As a result, the surface of the protective film can be made substantially flat, and the occurrence of defects caused by the steps on the main surface of the semiconductor wafer can be suppressed.

[0053] According to the method for manufacturing a semiconductor component according to the second aspect and the fifth aspect, the occurrence of defects caused by the steps on the main surface of the semiconductor wafer can be suppressed. As a result, the manufacturing of semiconductor components can be performed efficiently.

[0054] According to the protective film according to the third aspect and the sixth aspect, the occurrence of defects caused by the steps on the main surface of the semiconductor wafer can be suppressed. As a result, the manufacturing of semiconductor components can be performed efficiently. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] Figure 1 ​(a) is a top view for explaining a semiconductor wafer for the bonding method of the present invention, and (b) is Figure 1 an enlarged side sectional view taken along the indicated line 1B-1B of (a) in

[0056] Figure 2 an enlarged side sectional view for explaining the protective film related to the present invention.

[0057] Figure 3 (a) is a top view for explaining a bonding device related to the bonding method of the first aspect, and (b) is an enlarged side sectional view.

[0058] Figure 4 (a) is a top view for explaining a configuration process related to the bonding method of the first aspect, and (b) is an enlarged side sectional view.

[0059] Figure 5 is an enlarged side sectional view for explaining a bonding process related to the bonding method of the first aspect.

[0060] Figure 6 is an enlarged side sectional view for explaining a compression process related to the bonding method of the first aspect.

[0061] Figure 7 is an enlarged side sectional view for explaining a semiconductor wafer with a protective film related to the bonding method of the first aspect.

[0062] Figure 8 is an enlarged side sectional view for explaining a semiconductor wafer with a protective film related to a conventional bonding method.

[0063] Figure 9 is an enlarged side sectional view for explaining a modified example of a support member related to the bonding method of the first aspect.

[0064] Figure 10 is a graph showing the results of measuring the unevenness on the surface of the protective film in the examples.

[0065] Figure 11 (a) is a top view for explaining another example of a semiconductor wafer for the bonding method of the present invention, and (b) is Figure 11 an enlarged side sectional view taken along the indicated line 11B-11B of (a) in

[0066] Figure 12 relates to the bonding method of the first aspect, and (a) and (b) are enlarged side sectional views for explaining the relationship between the gap C 1 between the semiconductor wafer and the pressing member and the gap C 2 between the support member. ​​​​​​​​​​​

[0067] Figure 13 The pasting method according to the first aspect, (a) is an enlarged side sectional view showing the arrangement process, and (b) is an enlarged side sectional view showing the compression process.

[0068] Figure 14 For the pasting method according to the fourth aspect, (a) is a side sectional view showing the processing steps involved, and (b) is an enlarged side sectional view.

[0069] Figure 15 It is an enlarged side sectional view showing the arrangement process involved in the pasting method according to the fourth aspect.

[0070] Figure 16 It is an enlarged side sectional view showing the pasting process involved in the pasting method according to the fourth aspect.

[0071] Figure 17 For another example of the processing steps involved in the pasting method according to the fourth aspect, (a) and (b) are enlarged side sectional views. Detailed Embodiments

[0072] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The matters shown herein are illustrative matters and matters for illustratively explaining the embodiments of the present invention, and are described for the purpose of providing an explanation that is considered to be able to most effectively and without difficulty understand the principles and conceptual features of the present invention. In this regard, for a fundamental understanding of the present invention, it is not intended to show the structural details of the present invention to a certain extent, but to clarify how several aspects of the present invention are actually embodied through the description in combination with the drawings.

[0073] [1] Pasting Method (First Embodiment)

[0074] This pasting method is the first embodiment according to the first aspect, and is a pasting method for a protective film 20 that protects the main surface 10A of a semiconductor wafer 10.

[0075] This pasting method includes: an arrangement process S1 of arranging the protective film 20 so as to cover the main surface 10A of the semiconductor wafer 10 (refer to Figure 4 (b)) and a pasting process S2 of pressing and pasting the protective film 20 onto the main surface 10A (refer to Figure 5 ).

[0076] The main surface 10A of the semiconductor wafer 10 has: a first region 12 where bumps 11 are arranged and a second region 13 which is a region including at least a part of the periphery of the main surface 10A and where no bumps 11 are arranged (refer to Figure 1 (a), (b)). ​​​​​

[0077] Further, the pasting step S2 includes a compressing step S3 of compressing the protective film 20 in its thickness direction (see Figure 6 ). The compressing step S3 is performed using a pressing member 32 for pressing the protective film 20 against the main surface 10A and a support member 33 provided along the outer peripheral edge of the second region 13.

[0078] The semiconductor wafer 10 with the protective film 20 pasted thereon by this pasting method is made to a desired thinness in the back grinding step, singulated, and various processes are performed, thereby manufacturing semiconductor components from the semiconductor wafer 10.

[0079] That is, this pasting method (the first embodiment) is included in the manufacturing method of the semiconductor components related to the second aspect.

[0080] The semiconductor wafer 10 to which this pasting method is applied has bumps 11 on either the front or back surface, and the entire surface on the side of the semiconductor wafer 10 having the bumps 11 is taken as the main surface 10A (see Figure 1 (b)).

[0081] This pasting method can be implemented using a pasting device 30 capable of performing the placement step S1, the pasting step S2, and the compressing step S3 (see Figure 3 ).

[0082] The above-mentioned pressing member 32 and support member 33 can be provided on the pasting device 30.

[0083] In this pasting method, the pasting step S2 includes a compressing step S3 of compressing the protective film 20 in its thickness direction. The compressing step S3 is performed using a pressing member 32 for pressing the protective film 20 against the main surface 10A and a support member 33 provided along the outer peripheral edge of the second region 13 of the main surface 10A.

[0084] In the compressing step S3, in the protective film 20 compressed in the thickness direction, a layer (the unevenness absorbing layer 23) showing fluidity or plasticity flows appropriately according to steps or unevenness, generating a concentration of film thickness portions that fill the steps or unevenness.

[0085] In addition, when the compressing step S3 is performed using the pressing member 32 and the support member 33, the flow of the film thickness portion of the protective film 20 toward the outside of the peripheral edge of the main surface 10A is restricted.

[0086] Moreover, by restricting the flow of the film thickness portion of the protective film 20 as described above, the film thickness portion (the unevenness absorbing layer 23) of the protective film 20 is concentrated thickly on the second region 13 of the main surface 10A, whereby the steps of the main surface 10A are filled and the surface of the protective film 20 becomes flat.

[0087] [2] Semiconductor wafer

[0088] The semiconductor wafer 10 involved in this bonding method is not particularly limited in terms of material and shape, and is usually made of silicon and formed into a disc shape.

[0089] As shown in Figure 1 (a) and (b) of, the semiconductor wafer 10 has a plurality of bumps 11 on the main surface 10A.

[0090] Here, the main surface 10A is the entire surface on the side where the bumps 11 are provided in the semiconductor wafer 10 having the bumps 11. The main surface 10A includes the surface of the semiconductor wafer 10 and the surface of the bumps 11. In addition, in the semiconductor wafer 10, the surface on the opposite side of the main surface 10A is the back surface.

[0091] The main surface 10A has a first region 12 where the bumps 11 are arranged and a second region 13 where the bumps 11 are not arranged.

[0092] Among them, the second region 13 has a peripheral region 13A and a blank region 13B.

[0093] In the above, the peripheral region 13A is a region constituting the periphery of the semiconductor wafer 10 (that is, a region becoming the periphery of the main surface 10A). Usually, for the semiconductor wafer 10, for the purpose of preventing notches or cracks from occurring at its periphery, a chamfered portion 14 is provided at the periphery (refer to Figure 1 (b) of and Figure 11 (b) of), and the region including the chamfered portion 14 is the peripheral region 13A. Therefore, no bumps are arranged in the peripheral region 13A including the chamfered portion 14.

[0094] On the other hand, the blank region 13B is a region where bumps can be arranged but are not actually arranged. Specifically, the blank region 13B is a region obtained by removing the peripheral region 13A from the second region 13.

[0095] The shapes (planar shapes) of the above regions are not limited. For example, in the substantially central portion of the main surface 10A, the first region 12 can be set to be substantially circular in plan view as exemplified in Figure 1 (a) of. In addition, in the substantially central portion of the main surface 10A, the first region 12 can be set to be polygonal in plan view as exemplified in Figure 11 (a) of.

[0096] It should be noted that, in order to easily understand the first region 12 and the second region 13, the boundary lines of these regions are indicated by double-dashed lines in Figure 1 (a) of and Figure 11 (a) of.

[0097] In addition, the second region 13 can be set to a shape surrounding the first region 12, for example, as illustrated in (a) of Figure 1 and Figure 11 .

[0098] Furthermore, the shape of the peripheral region 13A constituting the second region 13 can be set to be substantially circular in plan view so as to surround the first region 12 inside (see Figure 1 and Figure 11 ).

[0099] As illustrated in (a) of Figure 1 , the shape (planar shape) of the blank region 13B can be set to a bow shape. That is, it can be set that the blank region 13B is formed by the peripheral region 13A on the left side of the main surface 10A expanding in a bow shape toward the center of the main surface 10A. Such a blank region 13B can be used for the purpose of displaying (e.g., engraving) various information such as the serial number and manufacturing number of the semiconductor wafer 10. Therefore, Figure 1 the bow-shaped blank region 13B in (a) of

[0100] can also be referred to as an identification region. Figure 11 In addition, as illustrated in (a) of

[0101] , the shape (planar shape) of the blank region 13B can be formed into a shape surrounding the periphery of the first region 12 from the four sides of front, back, left, and right. More specifically, the shape of the blank region 13B can be formed into a shape in which four arc shapes are connected. Such a blank region 13B can be used as a region where no bumps 11 are arranged, for example, for reasons such as being prone to errors during productization. Figure 11 Furthermore, Figure 1 the blank region 13B in (a) of Figure 11 can also be referred to as a region formed when the size of the chip cut out from the semiconductor wafer 10 is large. That is, when the size of the chip is small, the first region 12 becomes substantially circular in plan view in Figure 11 . On the other hand, when the size of the chip is large, the first region 12 becomes substantially polygonal in plan view in Figure 11 . And when the first region 12 is substantially polygonal in plan view, the blank region 13B in 2 is formed to surround the periphery of the first region 12. When forming the blank region 13B in

[0102] , the size of the chip is, for example, 100 mm 2 or more.

[0103] The average height H1 of the bumps 11 on the main surface 10A is not particularly limited and can be arbitrarily set according to the types of the bumps 11 such as plated bumps, ball bumps, printed bumps, etc. Generally, the average height H1 of the bumps 11 on the main surface 10A is preferably less than 350 μm, more preferably in the range of 5 to 250 μm, and further preferably in the range of 10 to 150 μm.

[0104] The ratio of the area of the second region 13 to the total area of the main surface 10A is not particularly limited and can be arbitrarily set according to the size of the blank region 13B, but it is preferably less than 30%, more preferably 23% or less, and further preferably 15% or less.

[0105] The ratio of the area of the peripheral region 13A to the total area of the main surface 10A is not particularly limited, preferably 10% or less, more preferably 8% or less, and further preferably 5% or less.

[0106] In addition, the ratio of the area of the blank region 13B to the total area of the main surface 10A is not particularly limited and can be arbitrarily set, but it is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less.

[0107] In the second region 13, both the peripheral region 13A and the blank region 13B have a step with the first region 12. By forming depressions, dents, etc. on the surface of the protective film 20 imitating this step, it may cause adverse conditions such as the occurrence of vacuum errors, cracks, and cracks.

[0108] When comparing the peripheral region 13A and the blank region 13B, the area ratio of the blank region 13B to the total area of the main surface 10A is larger than that of the peripheral region 13A. Therefore, compared with the peripheral region 13A, it is easier to form larger depressions, dents, etc. on the surface of the protective film 20, and the possibility of causing the above adverse conditions is high.

[0109] Therefore, in the following description, unless otherwise specified, for the second region 13, the blank region 13B is listed for explanation.

[0110] [3] Protective film

[0111] The protective film 20 used in this pasting method is a film used in the manufacturing method of semiconductor components. More specifically, it is a film used in the back grinding process of making a semiconductor wafer into a desired thickness in the manufacturing method of semiconductor components.

[0112] That is, this protective film is the protective film involved in the third aspect.

[0113] As Figure 2 shown, the protective film 20 can have a structure including a base layer 21 and an adhesive material layer 22.

[0114] From the viewpoint of eliminating the unevenness caused by the bumps 11 and the steps caused by the height difference between the first region 12 and the second region 13, the protective film 20 preferably has a layer that can exhibit fluidity or plasticity. The protective film 20 of the present embodiment has an unevenness absorbing layer 23 between the base layer 21 and the adhesive material layer 22 as a layer that can exhibit fluidity or plasticity.

[0115] From the viewpoint of appropriately eliminating the unevenness caused by the bumps 11 and the steps caused by the height difference between the first region 12 and the second region 13, the average thickness H2 of the protective film 20 preferably satisfies the relational expression of 0.5 ≤ H2 / H1 with the average height H1 of the above-mentioned bumps 11.

[0116] Regarding the upper limit of H2 / H1, from the viewpoint that the protective film 20 absorbs with its film thickness and appropriately eliminates the unevenness caused by the bumps 11 and the steps caused by the height difference between the first region 12 and the second region 13, there is no particular limitation. From the viewpoint of suppressing the waste of materials due to the increase in the average thickness H2 of the protective film 20 and further appropriately maintaining the formability of the protective film 20, H2 / H1 is usually 10 or less (H2 / H1 ≤ 10), preferably 5 or less (H2 / H1 ≤ 5), and more preferably 4 or less (H2 / H1 ≤ 4).

[0117] Specifically, the average thickness H2 of the protective film 20 is preferably 30 μm or more, more preferably 100 μm or more, and further preferably 200 μm or more.

[0118] It should be noted that the average height H1 is the average value of the measured heights of 1 / 10 of the bumps randomly selected from all the bumps. In addition, the average thickness H2 is the average value of the measured thicknesses of the film at 10 locations selected at intervals of 2 cm or more.

[0119] Hereinafter, each layer of the protective film will be described.

[0120] (1) Base layer

[0121] The base layer 21 is a layer provided for the purpose of improving characteristics such as the operability, mechanical properties, and heat resistance of the protective film 20.

[0122] The material used in the base layer 21 is not particularly limited as long as it has mechanical strength capable of withstanding the external force applied during the grinding of the semiconductor wafer in the back grinding process.

[0123] Generally, a synthetic resin film is used as the material of the base layer 21.

[0124] Examples of the above synthetic resins include one or more thermoplastic resins selected from polyolefins such as polyethylene, polypropylene, poly(4-methyl-1-pentene), and poly(1-butene); polyesters such as polyethylene terephthalate and polybutylene terephthalate; polyamides such as nylon-6, nylon-66, and polyhexamethylene isophthalamide; polyacrylates; polymethacrylates; polyvinyl chloride; polyetherimide; ethylene-vinyl acetate copolymer; polyacrylonitrile; polycarbonate; polystyrene; ionomer; polysulfone; polyethersulfone; and polyphenylene ether.

[0125] Among these synthetic resins, from the viewpoint of appropriately protecting the semiconductor wafer in the back grinding process, one or more selected from polypropylene, polyethylene terephthalate, polyamide, and ethylene-vinyl acetate copolymer are preferred, and one or more selected from polyethylene terephthalate and ethylene-vinyl acetate copolymer are more preferred.

[0126] In addition, in the synthetic resin, as additives, plasticizers, softeners (such as mineral oil), fillers (such as carbonates, sulfates, titanates, silicates, oxides (such as titanium oxide and magnesium oxide), silica, talc, mica, clay, and fiber fillers), antioxidants, light stabilizers, antistatic agents, lubricants, and colorants can be added. These additives can be used alone or in combination of two or more.

[0127] Regardless of whether it is stretched or not, the above-mentioned film can be any of unstretched films, uniaxially stretched films, biaxially stretched films, etc. From the viewpoint of improving mechanical strength, stretched films are preferred.

[0128] In addition, the film can be either a single-layer film or a multilayer film with multiple layers.

[0129] From the viewpoint of improving the adhesiveness with the uneven absorption layer 23 etc., the base layer 21 preferably uses a film subjected to surface treatment. Specific examples of the surface treatment include corona treatment, plasma treatment, primer coating treatment, and primer application treatment.

[0130] The thickness of the base layer 21 is not particularly limited. From the viewpoint of obtaining good characteristics, it is preferably 10 to 200 μm, more preferably 20 to 150 μm, and further preferably 30 to 100 μm.

[0131] (2) Adhesive material layer

[0132] The adhesive material layer 22 is a layer provided for the purpose of pasting and fixing the protective film 20 on the main surface 10A of the semiconductor wafer 10.

[0133] The material of the adhesive material layer 22 is not particularly limited, and a material containing at least an adhesive base can be used. Examples of the adhesive base include (meth)acrylic adhesives, silicone adhesives, urethane adhesives, rubber adhesives, etc.

[0134] In addition, the material of the adhesive material layer 22 may contain a crosslinking agent in addition to the adhesive base.

[0135] As the material of the adhesive material layer 22, either an energy ray-curable adhesive material that can be cured by energy rays or an energy ray-noncurable adhesive material that cannot be cured by energy rays can be used. Among them, from the viewpoint of curing by energy ray irradiation and reducing the adhesive force, so that the protective film 20 can be peeled off from the main surface 10A without residual adhesive, the material of the adhesive material layer 22 is preferably an energy ray-curable adhesive material.

[0136] Regarding the energy ray-curable adhesive material, the type of energy ray is not particularly limited, and examples include ultraviolet rays, electron beams, infrared rays, etc.

[0137] In addition, the energy ray-curable adhesive material may contain, in addition to the adhesive base, a compound having a carbon-carbon double bond in the molecule and a photoinitiator capable of reacting with energy rays to initiate the polymerization of the curable compound. The curable compound is preferably a monomer, oligomer, or polymer having a carbon-carbon double bond in the molecule and capable of being cured by radical polymerization.

[0138] The adhesive force of the adhesive material layer 22 is not particularly limited. From the viewpoints of ensuring good adhesiveness to the semiconductor wafer and being able to suppress residual adhesive on the semiconductor wafer during peeling, the adhesive force to the silicon wafer measured according to JIS Z0237 when peeled from the surface of the silicon wafer after being pasted on the surface of the silicon wafer and left for 60 minutes (measured in an environment of 23°C and 50% relative humidity) is preferably 0.1 to 10 N / 25 mm. The adhesive force is more preferably 0.2 to 9 N / 25 mm, and further preferably 0.3 to 8 N / 25 mm.

[0139] The thickness of the adhesive material layer 22 is not particularly limited. From the viewpoints of being able to exert an appropriate adhesive force and being able to be peeled off without residual adhesive, it is preferably 1 to 50 μm, more preferably 2 to 45 μm, and further preferably 3 to 40 μm.

[0140] (3) Concavo-convex absorption layer

[0141] The uneven absorption layer 23 is a layer provided for the purpose of absorbing the uneven shape of the bumps 11 disposed on the main surface 10A through the uneven absorption property exhibited by its fluidity or plasticity, and filling the steps generated by the height difference between the first region 12 and the second region 13 to make the surface of the protective film 20 smooth.

[0142] The material of the uneven absorption layer 23 is not particularly limited as long as it has the uneven absorption property due to its fluidity or plasticity, and a thermoplastic resin is usually used.

[0143] Specific examples of the thermoplastic resin include olefin resins, ethylene-polar monomer copolymers, ABS resins, vinyl chloride resins, vinylidene chloride resins, (meth)acrylic resins, polyamide resins, fluorine resins, polycarbonate resins, polyester resins, etc. Among them, from the viewpoint of good uneven absorption property, at least one selected from olefin resins and ethylene-polar monomer copolymers is preferred.

[0144] Examples of the olefin resin include linear low density polyethylene (LLDPE), low density polyethylene, high density polyethylene, polypropylene, ethylene-α-olefin copolymers containing ethylene and α-olefins having 3 to 12 carbon atoms, propylene-α-olefin copolymers containing propylene and α-olefins having 4 to 12 carbon atoms, ethylene-cyclic olefin copolymers, ethylene-α-olefin-cyclic olefin copolymers, etc.

[0145] Examples of the ethylene-polar monomer copolymer include ethylene-(meth)acrylate copolymers such as ethylene-(meth)ethyl acrylate copolymer, ethylene-(meth)methyl acrylate copolymer, ethylene-(meth)propyl acrylate copolymer, ethylene-(meth)butyl acrylate copolymer; ethylene-vinyl ester copolymers such as ethylene-vinyl acetate copolymer, ethylene-vinyl propionate copolymer, ethylene-vinyl butyrate copolymer, ethylene-vinyl stearate copolymer, etc.

[0146] In addition, the above-mentioned thermoplastic resins can be used alone or in combination of two or more.

[0147] The density of the uneven absorption layer 23 is not particularly limited. From the viewpoint of the balance (rigidity and flexibility) of the softness related to the uneven absorption property and the rigidity related to the durability in the back grinding process, it is preferably 800 to 990 kg / m 3 , more preferably 830 to 980 kg / m 3 , further preferably 850 to 970 kg / m 3 .

[0148] The thickness of the uneven absorption layer 23 is not particularly limited as long as it can exhibit uneven absorption properties for the uneven shape caused by the bumps 11 and the steps caused by the height difference between the first region 12 and the second region 13. From the perspective of being able to appropriately exhibit uneven absorption properties, it is preferably 20 μm or more, more preferably 80 μm or more, and further preferably 170 μm or more.

[0149] Regarding the storage modulus G'(60) of the uneven absorption layer 23 at 60 °C, from the perspective of being able to make the uneven absorption layer 23 exhibit appropriate uneven absorption properties by heating during the pasting of the protective film 20, it is preferably 0.05×10 6 ~1.0×10 6 Pa, more preferably 0.075×10 6 ~0.5×10 6 Pa.

[0150] Regarding the storage modulus G'(25) of the uneven absorption layer 23 at 25 °C, from the perspective of being able to maintain its shape after the pasting of the protective film 20 and being able to maintain appropriate adhesion to the main surface 10A, it is preferably 4.0×10 6 ~7.0×10 6 Pa, more preferably 4.5×10 6 ~6.5×10 6 Pa.

[0151] Regarding the elastic modulus ratio G'(60) / G'(25) of the storage modulus G'(60) and the storage modulus G'(25) of the uneven absorption layer 23, from the perspective of being able to exhibit good uneven absorption properties and being able to maintain good adhesion to the main surface 10A, it is preferably G'(60) / G'(25) < 0.1, more preferably G'(60) / G'(25) ≤ 0.08, and further preferably G'(60) / G'(25) ≤ 0.05.

[0152] It should be noted that regarding the storage modulus G', using a dynamic viscoelasticity measuring device (for example, manufactured by Rheometrics, model "RMS-800"), under the conditions of a measurement frequency of 1 Hz and a strain of 0.1 to 3%, G'(25) is measured at 25 °C, and the storage modulus G'(60) is measured at 60 °C.

[0153] (4) Other Layers

[0154] The protective film 20 is not limited to the structure having the above-mentioned base layer 21, adhesive material layer 22, and uneven absorption layer 23, and a structure having other layers between the base layer 21 and the uneven absorption layer 23, or between the uneven absorption layer 23 and the adhesive material layer 22 can be adopted.

[0155] As other layers, an interface strength improving layer for improving the interface strength with the adhesive material layer 22, a transfer prevention layer for suppressing the transfer of low molecular weight components to the adhesive surface of the adhesive material layer 22, an antistatic layer for preventing the protective film 20 from being charged, etc. can be cited. They can be used alone or in combination of two or more.

[0156] [4]Pasting device

[0157] The pasting device 30 is not particularly limited as long as it can perform the placement process S1, the pasting process S2, and the compression process S3.

[0158] As the pasting device 30, the following configurations can be exemplified.

[0159] As Figure 3 shown in (a) and (b) of, the pasting device 30 includes a chuck table 31, a pressing member 32 disposed above the chuck table 31, and a support member 33 disposed beside the chuck table 31.

[0160] The chuck table 31 is used to support and fix the semiconductor wafer 10 placed on its surface.

[0161] The pressing member 32 is used to press the protective film 20 against the main surface 10A of the semiconductor wafer 10 supported and fixed on the chuck table 31.

[0162] The support member 33 is disposed along the outer periphery of the second region 13 of the semiconductor wafer 10 supported and fixed on the chuck table 31 and is used to support the edge portion of the protective film 20.

[0163] From the viewpoint of allowing the uneven absorption layer 23 of the protective film 20 to appropriately exhibit fluidity or plasticity, the pasting device 30 can be configured to have a heating mechanism for heating the protective film 20. As this heating mechanism, a hot air heater etc. can be exemplified.

[0164] From the viewpoint of being able to appropriately perform the placement process S1, the pasting device 30 can be configured to have a supply mechanism for supplying the protective film 20 into the device. As this supply mechanism, a film supply roller, a film supply arm etc. can be exemplified.

[0165] Hereinafter, each component of the pasting device will be described.

[0166] (1) Chuck table

[0167] The chuck table 31 only needs to be able to support and fix the semiconductor wafer 10, and there is no particular limitation on the type, configuration, etc.

[0168] From the viewpoint of being able to appropriately fix the semiconductor wafer 10 and prevent contamination and damage of the semiconductor wafer 10, the chuck table 31 is preferably a vacuum adsorption table.

[0169] (2) Pressing member

[0170] The pressing member 32 is not particularly limited in shape, configuration, etc. as long as it can press the protective film 20 against the main surface 10A of the semiconductor wafer 10.

[0171] Figure 3 The pressing member 32 shown in (a) and (b) is formed in a disc shape and is disposed above the semiconductor wafer 10 supported and fixed on the chuck table 31, and is configured to be able to approach or move away from the semiconductor wafer 10.

[0172] From the viewpoint of flattening the surface of the protective film 20 pasted on the main surface 10A of the semiconductor wafer 10, it is preferable that the pressing surface 32A of the pressing member 32 for pressing the protective film 20 is a flat surface.

[0173] From the viewpoint of suppressing deformation when pressing the protective film 20 and maintaining the pressing surface 32A as a flat surface, the hardness of the pressing surface 32A is preferably 2.5 to 8.5 on the Mohs hardness scale, more preferably 3 to 7, and further preferably 4 to 6.

[0174] The material of the pressing surface 32A is not particularly limited, and from the viewpoint of satisfying the above-mentioned Mohs hardness, metals such as iron, copper, aluminum, steel, stainless steel, and aluminum alloy, and inorganic materials such as glass and ceramics can be used.

[0175] The pressing member 32 can be configured, for example, such that only the pressing surface 32A is formed of the above-mentioned inorganic material, and the portion other than the pressing surface 32A is formed of a synthetic resin.

[0176] The configuration for moving the pressing member 32 close to or away from the semiconductor wafer 10 is not particularly limited.

[0177] For example, the pressing member 32 can be configured such that one end edge thereof is rotatably mounted on the pasting device 30, approaches the semiconductor wafer 10 when springing downward, and moves away from the semiconductor wafer 10 when springing upward.

[0178] In addition, the pressing member 32 can be configured to be mounted on a rail or the like provided in the pasting device 30 so as to extend in the thickness direction of the semiconductor wafer 10 and be movable up and down, approach the semiconductor wafer 10 when descending, and move away from the semiconductor wafer 10 when ascending.

[0179] Alternatively, the pressing member 32 can be configured to be fixed above the chuck table 31, and the chuck table 31 can be configured to be vertically movable. When the chuck table 31 moves upward, the semiconductor wafer 10 approaches the pressing member 32, and when the chuck table 31 moves downward, the semiconductor wafer 10 moves away from the pressing member 32.

[0180] (3) Support member

[0181] There are no particular limitations on the configuration of the support member 33 as long as it can compress the protective film 20 in the compression step S3.

[0182] Regarding the shape of the support member 33, there are no particular limitations as long as it can be disposed along the outer peripheral edge of the second region 13 of the semiconductor wafer 10 and can appropriately perform the compression step S3. Examples of such shapes include a circular ring shape, a sector shape, an arc shape, etc. when viewed from above.

[0183] Regarding the material of the support member 33, there are no particular limitations as long as it can compress the protective film 20 together with the pressing member 32. Examples of such materials include inorganic materials such as metals listed in the description of the pressing member 32, as well as thermoplastic resins such as engineering plastics and super engineering plastics, and thermosetting resins.

[0184] Figure 3 The support member 33 shown in (a) and (b) is formed in a circular ring shape when viewed from above so as to be able to surround the entire semiconductor wafer 10 inside.

[0185] It should be noted that when the shape of the support member 33 is a sector shape, an arc shape, etc. when viewed from above, it is preferable to dispose the support member 33 along the outer peripheral edge of the blank region 13B, particularly in the second region 13.

[0186] As Figure 6 shown, the support member 33 requires a width W of a certain size or more when viewed from above 1 , thereby enabling the function of the protective film 20 to be exerted, that is, the function of filling the step of the blank region 13B with the portion sandwiched between the pressing member 32 and the support member 33.

[0187] Regarding the volume required to fill the step, it can be appropriately adjusted according to conditions such as the height of the bump 11, the area occupied by the blank region 13B on the main surface 10A of the semiconductor wafer 10, and the thickness of the protective film 20.

[0188] Therefore, the width W of the support member 33 when viewed from above 1There is no particular limitation. From the viewpoint of being able to compress the protective film 20 while surely sandwiching it between the pressing member 32, it is generally preferably 1 to 20 mm, more preferably 2 to 15 mm, and still more preferably 3 to 10 mm.

[0189] From the viewpoint of appropriately moving the film layer (for example, the uneven absorption layer 23) at the edge of the protective film 20 compressed in the compression step S3 onto the second region 13 of the main surface 10A of the semiconductor wafer 10, particularly onto the blank region surface 101A of the blank region 13B, the support surface 33A that supports the edge of the protective film 20 in the support member 33 is parallel to the main surface 10A of the semiconductor wafer 10.

[0190] Or, as Figure 9 shown, from the viewpoint of more appropriately moving the film layer (for example, the uneven absorption layer 23) at the edge of the protective film 20 compressed in the compression step S3 onto the blank region surface 101A, the support surface 33A of the support member 33 may also be inclined so as to face the main surface 10A side of the semiconductor wafer 10.

[0191] Figure 3 In the pasting device 30 shown in (a) and (b) of 1 , from the viewpoint of being able to appropriately perform the compression step S3, when the gap between the main surface 10A of the semiconductor wafer 10 and the pressing member 32 is set to C 2 and the gap between the support member 33 and the pressing member 32 is set to C 1 , it is C 2 >C 2 . In the case of C1>C

[0192] , the support surface 33A of the support member 33 is disposed at a position higher than the blank region surface 101A in the main surface 10A of the semiconductor wafer 10. 1 It should be noted that the above-mentioned gap C 2 and the gap C 1 may also be set to C 2 =C 1 or C 2 <C 1 =C 2 . In the case of C 1 <C 2 , the support surface 33A of the support member 33 is disposed at a position lower than the surface of the second region 13 of the semiconductor wafer 10.

[0193] More specifically, when the position of the blank region surface 101A in the thickness direction of the semiconductor wafer 10 is set to P1 Set the position of the support surface 33A of the support member 33 as P 2 and these Ps 1 The distance between P 2 is set as d 1 (μm), in the case of C 1 and C 2 satisfy C 1 > C 2 In the case (refer to Figure 12 (a)), it is preferably set that 50 ≤ d 1 (μm) ≤ 2000, and more preferably set that 100 ≤ d 1 (μm) ≤ 1000.

[0194] In addition, similarly, when setting the position of the surface 101A of the blank area in the thickness direction of the semiconductor wafer 10 as P 1 and setting the position of the support surface 33A of the support member 33 as P 2 and these Ps 1 The distance between P 2 is set as d 2 (μm), in the case of C 1 and C 2 satisfy C 1 < C 2 In the case (refer to Figure 12 (b)), it is preferably set that 0 < d 2 (μm) < 400, and more preferably set that 10 ≤ d 2 (μm) ≤ 300, and more preferably set that 50 ≤ d 2 (μm) ≤ 200.

[0195] [5] Configuration process

[0196] As shown in Figure 4 (a) and (b), the configuration process S1 is a process of supplying the protective film 20 to the main surface 10A of the semiconductor wafer 10 with the pressing member 32 (not shown) in a state away from the semiconductor wafer 10.

[0197] In this configuration process S1, the supplied protective film 20 is arranged so as to cover the main surface 10A of the semiconductor wafer 10 (refer to Figure 4 (b) and Figure 5 ).

[0198] The shape of the supplied protective film 20 is not particularly limited, and any one of circular, square, rectangular, and strip-shaped can be used when viewed from above.

[0199] The supply method of the protective film 20 is not particularly limited, and either a batch type in which one protective film 20 is supplied each time or a continuous type in which the protective film 20 is continuously supplied can be used.

[0200] In Figure 4 In the placement process S1 shown in (a) and (b), the shape of the supplied protective film 20 is circular when viewed from above corresponding to the main surface 10A, and the supply method of the protective film 20 is a batch type.

[0201] In the placement process S1, from the viewpoints of supplementing a film thickness amount sufficient to fill the step in the entire second region 13 and appropriately restricting the flow of the film thickness portion to the outside of the periphery of the main surface 10A, the protective film 20 is placed in such a manner that the edge portion (peripheral portion) of the protective film 20 protrudes outward from the periphery of the second region 13.

[0202] The protruding amount of the edge portion of the protective film 20 is not particularly limited. From the viewpoint of surely performing the compression process S3, the protruding amount is preferably an amount that can place the protruding edge portion on the support surface 33A of the support member 33.

[0203] As Figure 6 shown, in order to exert the function brought by the protective film 20, that is, the function of filling the step of the blank region 13B with the portion sandwiched between the pressed member 32 and the support member 33, the protruding amount of the edge portion of the protective film 20 preferably has a width W of a certain value or more when viewed from above 2 , and is placed on the support surface 33A of the support member 33.

[0204] Regarding the volume required to fill the step, it can be appropriately adjusted according to conditions such as the height of the bump 11, the area occupied by the blank region 13B on the main surface 10A of the semiconductor wafer 10, and the thickness of the protective film 20.

[0205] Therefore, regarding the protruding amount of the edge portion of the protective film 20, the width W thereof when viewed from above 2 is not particularly limited, but from the viewpoint of reducing the amount of waste as the excess portion of the protective film 20, generally, it is more preferably set to an amount that does not further protrude outward from the periphery of the support surface 33A.

[0206] Specifically, regarding the protruding amount of the edge portion of the protective film 20, when the length between the position corresponding to the periphery of the main surface 10A on the protective film 20 and the outer periphery of the protective film 20 is set as the width W when viewed from above 2 in the case of 2 the width W is preferably 0.5 to 10 mm, more preferably 1 to 8 mm, and further preferably 1.5 to 6 mm.

[0207] [6] Pasting process

[0208] As Figure 5 shown, the pasting step S2 is a step of bringing the pressing member 32 close to the main surface 10A of the semiconductor wafer 10 and pressing and pasting the protective film 20 onto the main surface 10A by using the pressing member 32.

[0209] The pasting step S2 includes a compressing step S3 of compressing the protective film 20 in its thickness direction.

[0210] The execution timing of the compressing step S3 in the pasting step S2 is not particularly limited. For example, it can be set such that when the compressing step S3 starts, it is after the pasting step S2 starts; when the compressing step S3 ends and when the pasting step S2 ends, they are approximately simultaneous; when the compressing step S3 ends, it is before the pasting step S2 ends, etc.

[0211] In addition, in the pasting step S2, by heating the protective film 20 using the heating mechanism of the pasting device 30, the film thickness portion (concavo-convex absorption layer 23) of the protective film 20 can be appropriately deformed in the compressing step S3.

[0212] The heating temperature of the protective film 20 is not particularly limited as long as it is set to a temperature at which the concavo-convex absorption layer 23 can be appropriately deformed according to the storage modulus G' of the above-mentioned concavo-convex absorption layer 23.

[0213] Specifically, as long as it is within the range of the storage modulus G' of the above-mentioned concavo-convex absorption layer 23, the heating temperature of the protective film 20 is preferably 50 to 200 °C, more preferably 60 to 100 °C, and further preferably 70 to 90 °C.

[0214] (1) Compressing step

[0215] As Figure 6 shown, the compressing step S3 is performed by making the support member 33 support the edge portion of the protective film 20 and sandwiching the edge portion between the support member 33 and the pressing member 32 for compression.

[0216] The compression force when compressing the edge portion of the protective film 20 can be set by the pressing force of the pressing member 32. From the viewpoint of being able to appropriately compress the edge portion of the protective film 20 and prevent cracking and cracking of the semiconductor wafer 10, the specific pressing force is preferably 0.3 to 2 MPa, more preferably 0.4 to 1.5 MPa, and further preferably 0.5 to 1 MPa.

[0217] In the compressing step S3, on the first region 12 of the main surface 10A, the film thickness portion (concavo-convex absorption layer 23) of the protective film 20 that is flattened in the thickness direction by being sandwiched between the pressing member 32 and the bump 11 deforms following the concavo-convex shape of the bump 11 to fill the concavo-convex.

[0218] Moreover, a part of the film thickness portion of the protective film 20 flattened in the thickness direction flows onto the blank area 13B of the second region 13 as indicated by the arrow on the right side in Figure 6 , increasing the film thickness amount of the protective film 20 on the blank area surface 101A.

[0219] On the other hand, the edge portion of the protective film 20 compressed in the thickness direction while being sandwiched between the support member 33 and the pressing member 32 flows through the film thickness portion (concavo-convex absorption layer 23) and is squeezed onto the blank area surface 101A as indicated by the arrow on the left side in Figure 6 , thereby increasing the film thickness amount of the protective film 20 on the blank area surface 101A.

[0220] In addition, the edge portion of the protective film 20 compressed in the thickness direction prevents the film thickness portion from further escaping outward from the periphery of the second region 13 by restricting the flow of the film thickness portion from the blank area surface 101A by the support member 33 and the pressing member 32.

[0221] Therefore, the film thickness portion of the protective film 20 flows from the first region 12 and the compressed edge portion onto the blank area surface 101A, thereby supplementing a film thickness amount sufficient to fill the step in the entire second region 13. In this way, the protective film 20 on the blank area surface 101A with the supplemented film thickness amount fills the step throughout the entire second region 13 by increasing the film thickness.

[0222] In addition, since the surface of the protective film 20 is in a state of being pressed by the pressing member 32, it is not affected by the flow of the film thickness portion but becomes a flat surface following the pressing surface 32A.

[0223] After the compression process S3, the semiconductor wafer 10 with the protective film 20 pasted on the main surface 10A is taken out from the pasting device 30, and the redundant portions such as the edge portion of the compressed protective film 20 are cut off.

[0224] As Figure 7 shown, in the semiconductor wafer 10 from which the redundant portions have been cut off, the film thickness portion of the protective film 20 is thickly concentrated on the region surface 101A, thereby filling the step.

[0225] In addition, in the above description, the blank area 13B is cited as the second region 13, but similarly to the blank area 13B, in the peripheral region 13A, the film thickness portion of the protective film 20 is also thickly concentrated on the second region 13, thereby filling the step.

[0226] Moreover, the surface of the protective film 20 pasted on the semiconductor wafer 10 does not form defects imitating the steps of the semiconductor wafer 10 but becomes a uniform flat surface as a whole.

[0227] It should be noted that the above pasting method is described by taking the blank area 13B mainly used as an identification area shown in (a) and (b) of Figure 1 as an example, but the same effect can also be obtained in the blank area 13B as shown in (a) and (b) of Figure 11 . That is, in the case where there is a blank area 13B having a flat blank area surface 101A in the second area 13 which is an area where bumps are not arranged in the semiconductor wafer 10 as an object, this pasting method is particularly useful.

[0228] That is, when there is a blank area 13B with a flat blank area surface 101A in the second area 13 of the semiconductor wafer 10 as the object, which is the area where bumps are not arranged, this pasting method is particularly useful.

[0229] [7] Pasting method (second embodiment)

[0230] This pasting method is the second embodiment of the first solution.

[0231] This pasting method (second embodiment) is included in the manufacturing method of the semiconductor component of the second solution in the same way as the first embodiment.

[0232] The semiconductor wafer 10 and the protective film 20 used in this pasting method are as described in the above [2] Semiconductor Wafer and the above [3] Protective Film, and the description is omitted.

[0233] Compared with the above first embodiment, the placement process and the compression process of the pasting method of the second embodiment are different. Hereinafter, the placement process and the compression process of this pasting method will be described.

[0234] (1) Placement process

[0235] As shown in (a) of Figure 13 , the above placement process S1 can be a process of placing the protective film 20 in such a manner that the edge portion (peripheral portion) of the protective film 20 is located on the inner peripheral side of the support member 33. In this placement process S1, the edge portion of the protective film 20 is not placed on the support surface 33A of the support member 33.

[0236] In this placement process S1, in order to block the bulging of the protective film 20 in the outer peripheral direction of the second area 13 generated in the subsequent compression process S3 with the inner peripheral surface of the support member 33, it is preferable to shorten the distance in plan view between the edge portion of the protective film 20 and the inner peripheral surface of the support member 33 as much as possible.

[0237] Specifically, the distance in plan view between the edge portion of the protective film 20 and the inner peripheral surface of the support member 33 is preferably less than 1 mm, more preferably 0.5 mm or less, and further preferably 0.3 mm or less. And most preferably, the distance in plan view between the edge portion of the protective film 20 and the inner peripheral surface of the support member 33 is 0 mm, that is, the state where the edge portion of the protective film 20 is in contact with the inner peripheral surface of the support member 33.

[0238] (2) Compression process

[0239] In the compression step S3 after the arrangement step S1, the protective film 20 sandwiched between the pressing member 32 and the main surface 10A is intended to have the film thickness portion (concave-convex absorption layer 23) bulge out from the edge portion (peripheral portion) of the protective film 20 toward the outer circumference of the second region 13. Figure 13 As shown by the arrow on the left side in (b), the bulging of the thick film portion (the unevenness absorbing layer 23 ) is blocked by the inner peripheral surface of the supporting member 33 .

[0240] For the edge of the protective film 20, the film thickness portion (concave-convex absorption layer 23) blocked by the inner circumferential surface of the supporting member 33 will remain on the blank area surface 101A, and flow from the first area 12 to the blank area surface 101A through the film thickness portion, thereby supplementing the film thickness that can fill the step in the entire second area 13.

[0241] The edge of the protective film 20 on the blank area surface 101A is increased in thickness by supplementing the film thickness. Therefore, the compression step S3 is a step of compressing the edge of the protective film 20 by the pressing surface 32A of the pressing member 32, the inner peripheral surface of the supporting member 33, and the main surface 10A of the semiconductor wafer 10. And, the step is filled throughout the second area 13 by the compressed edge of the protective film 20.

[0242] The semiconductor wafer 10 to which the protective film 20 is attached by this attaching method is made into a desired thickness in a back grinding step, separated into pieces, and subjected to various processes, thereby manufacturing a semiconductor component from the semiconductor wafer 10. That is, this attaching method is included in the manufacturing method of a semiconductor component.

[0243] It should be noted that, regarding the pasting method of the present application, when comparing the first embodiment with the second embodiment, in the first embodiment, the edge of the protective film 20 is compressed and flattened between the support member 33 and the pressing member 32, whereas in the second embodiment, the edge of the protective film 20 is not compressed between the support member 33 and the pressing member 32, but the bulging of the protective film 20 is blocked by the inner circumferential surface of the support member 33, which is different in this respect. The effect produced by this difference can be more significantly produced when the protective film 20 has a layer that can show fluidity or plasticity, that is, the unevenness absorption layer 23.

[0244] That is, when the protective film 20 has a layer (concavo-convex absorbing layer 23) capable of exhibiting fluidity or plasticity, in the case of implementing the pasting method of the first embodiment, by causing the layer (concavo-convex absorbing layer 23) constituting the edge portion to flow and extruding it into the second region 13 of the main surface 10A, not only the amount extruded from the first region 12 can be used, but also the portion extruded from the edge portion outside the second region 13 can be used to supplement the film thickness amount. In short, the pasting method of the first embodiment fills the step by extruding the concavo-convex absorbing layer 23 of the protective film 20 from both the inner peripheral portion and the outer peripheral portion of the peripheral portion surrounding the second region 13 into the second region 13.

[0245] In contrast, when the protective film 20 has a layer (concavo-convex absorbing layer 23) capable of exhibiting fluidity or plasticity, that is, in the case of implementing the pasting method of the second embodiment, the layer (concavo-convex absorbing layer 23) constituting the edge portion cannot be caused to flow and extruded into the second region 13 of the main surface 10A, and it is necessary to supplement the film thickness amount only with the amount extruded from the first region 12. In short, the pasting method of the second embodiment fills the step by extruding the concavo-convex absorbing layer 23 of the protective film 20 only from the inner peripheral portion of the peripheral portion surrounding the second region 13 into the second region 13.

[0246] Therefore, when the protective film 20 has a layer (concavo-convex absorbing layer 23) capable of exhibiting fluidity or plasticity, in the first embodiment, in order to fill the step of the second region 13, the layer (concavo-convex absorbing layer 23) constituting the edge portion outside the second region 13 can be utilized. In this regard, it can also cope with the semiconductor wafer 10 having a larger blank region 13B, and it can be said that it is more advantageous than the second embodiment.

[0247] [8] Pasting method (third embodiment)

[0248] This pasting method is the third embodiment of the fourth aspect.

[0249] The semiconductor wafer 10 used in this pasting method (third embodiment) is the same as the semiconductor wafer used in the pasting methods of the above embodiments, and its detailed content is as described in the above [2] Semiconductor Wafer, so the description is omitted.

[0250] The protective film 20 used in this pasting method (third embodiment) is the same as the protective film used in the pasting methods of the above embodiments, and its detailed content is as described in the above [3] Protective Film, so the description is omitted. That is, the protective film 20 is also the protective film related to the sixth aspect.

[0251] This pasting method (third embodiment) includes: a processing step S11 of processing the protective film 20 to obtain a processed film 20A (refer to Figure 14(a) and (b)); a step S12 of disposing the processed film 20A so as to cover the main surface 10A of the semiconductor wafer 10 (see Figure 15 ); and a step S13 of pressing and pasting the processed film 20A onto the main surface 10A (see Figure 16 ).

[0252] The processing step S11 is a step of forming portions with different thicknesses on the protective film 20 to obtain the processed film 20A.

[0253] Moreover, the disposing step S12 is a step of disposing the processed film 20A such that a relatively thick region 201 in the portions with different thicknesses of the processed film 20A corresponds to the second region 13.

[0254] The semiconductor wafer 10 pasted with the protective film 20 by this pasting method is ground to a desired thinness in the back grinding step, singulated, and subjected to various processes, thereby manufacturing semiconductor components from the semiconductor wafer 10.

[0255] That is, this pasting method (third embodiment) is included in the manufacturing method of the semiconductor components according to the fifth aspect.

[0256] In this pasting method, the processing step S11 can be implemented using a processing apparatus 40 capable of performing this step (see Figure 14 (a) and (b)).

[0257] In the processing step S11, the protective film 20 is processed to form portions with different thicknesses and made into the processed film 20A by causing uneven concentration of the film thickness in a layer (uneven absorption layer 23) that exhibits fluidity or plasticity.

[0258] In this pasting method, the disposing step S12 and the pasting step S13 can be implemented using a pasting apparatus 30 capable of performing these steps (see Figure 15 Figure 16 ).

[0259] In the disposing step S12, the processed film 20A is disposed on the main surface 10A such that a relatively thick region 201 in the portions with different thicknesses is located on the blank region surface 101A.

[0260] In the pasting step S13, the processed film 20A is pressed onto the main surface 10A by a pressing member 32, and the film thickness portion (uneven absorption layer 23) is unevenly concentrated in the relatively thick region 201 disposed on the blank region surface 101A of the main surface 10A, thereby filling the steps of the main surface 10A and making the surface of the protective film 20 (processed film 20A) flat.

[0261] ​Note that the pasting device 30 used in the configuration process S12 and the pasting process S13 of this pasting method can use a pasting device having a chuck table 31, a pressing member 32, a support member 33, etc., which is substantially the same as the pasting device used in the pasting methods of the above first and second embodiments. For the details of this pasting device 30, as described in the above [4] Pasting Device, the description is omitted here.

[0262] [9] Processing Device

[0263] The processing device 40 is not particularly limited as long as it can perform the processing process S11.

[0264] As the processing device 40, the following configurations can be exemplified.

[0265] As shown in Figure 14 (a) and (b) of, the processing device 40 has a first roller 41 and a second roller 42 that are arranged opposite to each other with the protective film 20 sandwiched therebetween.

[0266] The first roller 41 is rotatably supported above the protective film 20 in contact with the base layer 21 of the protective film 20.

[0267] The second roller 42 is rotatably supported below the protective film 20 in contact with the adhesive material layer 22 of the protective film 20.

[0268] A plurality of convex portions 43 are protrudingly provided on the circumferential surface of the second roller 42.

[0269] The first roller 41, the second roller 42, and the convex portions 43 are not particularly limited as long as they can process the protective film 20, and there are no special limitations on the material, drive method, configuration, etc.

[0270]

[10] Processing Process

[0271] As shown in Figure 14 (a) of, the processing process S11 is to supply the protective film 20 between the first roller 41 and the second roller 42 of the processing device 40, and send the protective film 20 out from between the first roller 41 and the second roller 42 in the Figure 14 traveling direction indicated by the arrow in (a) of.

[0272] In the processing process S11, the protective film 20 sent out from between the first roller 41 and the second roller 42 is made into a processed film 20A having portions with different thicknesses.

[0273] The shape of the protective film 20 supplied to the processing device 40 is not particularly limited, and any one of circular, square, rectangular, and strip-shaped can be used when viewed from above.

[0274] The supply method of the protective film 20 is not particularly limited, and either a batch type in which one protective film 20 is supplied each time or a continuous type in which the protective film 20 is continuously supplied can be used.

[0275] In Figure 14 In the processing steps S11 shown in (a) and (b), the shape of the supplied protective film 20 is circular in a plan view corresponding to the main surface 10A, and the supply method of the protective film 20 is a batch type.

[0276] In the processing device 40, when the protective film 20 is sandwiched between the first roller 41 and the second roller 42 and sent out in the traveling direction, the first roller 41 and the second roller 42 are rotated respectively.

[0277] The second roller 42 is provided with a convex portion 43 protruding on its circumferential surface. As shown in Figure 14 (b) thereof, as it rotates, the convex portion 43 comes into contact with the protective film 20.

[0278] The portion of the protective film 20 in contact with the convex portion 43 is flattened in the thickness direction between the convex portion 43 and the first roller 41.

[0279] As shown in Figure 14 (b) thereof, as indicated by the arrow, the film thickness portion (the uneven absorption layer 23) of the flattened portion of the protective film 20 flows and accumulates toward the portion adjacent to the flattened portion, thereby increasing the film thickness amount of the adjacent portion.

[0280] Moreover, on the protective film 20, portions with different thicknesses are formed in such a manner that the flattened portion becomes thinner and the portion adjacent to the flattened portion becomes thicker, and the processed film 20A is obtained.

[0281] The processed film 20A has a relatively thick region 201 in the portions with different thicknesses, and in the placement step S12, this relatively thick region 201 is utilized.

[0282]

[11] Placement step

[0283] As shown in Figure 15 , the placement step S12 is a step of supplying the processed film 20A obtained in the above-described processing step S11 onto the main surface 10A of the semiconductor wafer 10 after the pressing member 32 is moved away from the semiconductor wafer 10 fixed to the chuck table 31.

[0284] In this placement step S12, the supplied processed film 20A is placed so as to cover the main surface 10A of the semiconductor wafer 10.

[0285] In addition, a support member 33 is provided along the outer peripheral edge of the second region 13 beside the semiconductor wafer 10.

[0286] At this time, the processed film 20A is arranged such that the relatively thick region 201 corresponds to the second region 13, so that the relatively thick region 201 is located above the blank region surface 101A.

[0287]

[12] Pasting process

[0288] As Figure 16 shown, the pasting process S13 is a process in which the edge portion of the protective film 20 is supported by the support member 33, the pressing member 32 is brought close to the main surface 10A of the semiconductor wafer 10, and the protective film 20 is pressed and pasted onto the main surface 10A by the pressing member 32.

[0289] In the pasting process S13, on the first region 12 of the main surface 10A, the film thickness portion (concavo-convex absorption layer 23) of the processed film 20A sandwiched between the pressing member 32 and the bump 11 and flattened in the thickness direction deforms following the concavo-convex of the bump 11 to fill the concavo-convex.

[0290] In the compression process S3, by sandwiching the edge portion of the protective film 20 between the support member 33 and the pressing member 32, the flow of the film thickness portion from the blank region surface 101A toward the edge portion of the protective film 20 is restricted, preventing the film thickness portion from further escaping outward from the periphery of the second region 13.

[0291] Then, a part of the film thickness portion of the processed film 20A flattened in the thickness direction flows onto the blank region 13B of the second region 13 as shown by the arrow in Figure 16 , increasing the film thickness amount of the processed film 20A on the blank region surface 101A.

[0292] Regarding the processed film 20A, on the blank region surface 101A, since the relatively thick region 201 has been arranged in the arrangement process S12 (refer to Figure 15 ), therefore, by adding the flow amount from the first region 12 in the pasting process S13, the film thickness amount of the processed film 20A on the blank region surface 101A is further increased (refer to Figure 16 ).

[0293] In addition, in the processed film 20A, the portion adjacent to the relatively thick region 201 is flattened and thinned in the above-described processing process S11, so that it is possible to suppress the film thickness portion from further escaping outward from the periphery of the second region 13 through the flattened and thinned portion.

[0294] Furthermore, in the pasting process S13, by sandwiching the portion flattened and thinned in the processing process S11 between the support member 33 and the pressing member 32, it is possible to prevent the film thickness portion from further escaping outward from the periphery of the second region 13.

[0295] Therefore, the processed film 20A supplements the film thickness amount sufficient to fill the step in the entire second region 13 by making the relatively thick region 201 correspond to the second region 13 and flowing into the film thickness portion from the first region 12.

[0296] Moreover, the processed film 20A on the surface 101A of the blank region supplemented with the film thickness amount fills the step throughout the second region 13 by increasing the film thickness.

[0297] In addition, since the surface of the processed film 20A is in a state of being pressed by the pressing member 32, it is not affected by the flow of the film thickness portion, but becomes a flat surface following the pressing surface 32A.

[0298] In the above description, the blank region 13B is cited as the second region 13 for explanation. However, similarly to the blank region 13B, in the peripheral region 13A, the step is also filled by making the film thickness portion of the processed film 20A thickly concentrated on the second region 13.

[0299] Furthermore, the blank region 13B is not limited to the region mainly used as an identification region as shown in (a) and (b) of Figure 1 , and the same effect can also be obtained in the blank region 13B as shown in (a) and (b) of Figure 11 .

[0300] That is, when there is a blank region 13B having a flat blank region surface 101A in the second region 13 which is a region where bumps are not arranged in the semiconductor wafer 10 as an object, this pasting method is particularly useful.

[0301] Moreover, no defect imitating the step of the semiconductor wafer 10 is formed on the surface of the protective film 20 pasted on the semiconductor wafer 10, and the whole becomes a uniform flat surface.

[0302]

[13] Processing step (Fourth Embodiment)

[0303] The pasting method including this processing step is the fourth embodiment of the fourth aspect. This pasting method (Fourth Embodiment) is the same as the above-described third embodiment except for the processing device 40 and the processing step S11 using the processing device 40, and detailed description other than the processing device 40 and the processing step S11 is omitted.

[0304] It should be noted that the pasting method (Fourth Embodiment) including this processing step is included in the manufacturing method of the semiconductor component according to the fifth aspect in the same manner as the third embodiment.

[0305] In addition, the semiconductor wafer 10 and the protective film 20 used in the pasting method (fourth embodiment) including this processing step are the same as those of the semiconductor wafer and the protective film used in the pasting methods of the above-described embodiments including the third embodiment, and a detailed description thereof is omitted.

[0306] In this processing step S11, as Figure 17 (a) and (b) of FIG. show, the processing apparatus 40 has a support post 45 and a pressing body 46. The support post 45 is erected beside the semiconductor wafer 10 so as to be along the outer peripheral edge of the second region 13 of the semiconductor wafer 10 supported and fixed on the chuck table 31. The pressing body 46 is disposed so as to be opposed to the support post 45 in the vertical direction with the protective film 20 sandwiched therebetween.

[0307] The support post 45 supports the edge portion of the protective film 20 so as to dispose the protective film 20 above the semiconductor wafer 10, and is configured to bring the protective film 20 close to the main surface 10A of the semiconductor wafer 10 by descending.

[0308] The pressing body 46 is formed in a disk shape and is configured to descend and approach the support post 45.

[0309] Further, when the pressing body 46 descends, the protective film 20 supported by the support post 45 is sandwiched between the support post 45 and the pressing body 46, and thus is flattened and processed.

[0310] The above-described support post 45 and pressing body 46 only need to be able to process the protective film 20, and there is no particular limitation on the material, driving method, and the like.

[0311] The processing step S11 using the above-described processing apparatus 40 will be described.

[0312] As Figure 17 (a) of FIG. shows, in the processing step S11, the protective film 20 is flattened in the thickness direction between the support post 45 and the pressing body 46.

[0313] As Figure 17 (b) of FIG. shows, the film thickness portion (concavo-convex absorbing layer 23) of the flattened portion of the protective film 20 flows and accumulates toward the portion adjacent to the flattened portion, thereby increasing the film thickness amount of the adjacent portion.

[0314] Further, on the protective film 20, a portion with different thicknesses is formed such that the flattened portion becomes thinner and the portion adjacent to the flattened portion becomes thicker, and the processed film 20A is obtained.

[0315] The processed film 20A has a relatively thick region 201 in the portions with different thicknesses, and since the support posts 45 are arranged along the outer peripheral edge of the second region 13 of the semiconductor wafer 10, the position of this relatively thick region 201 corresponds to the second region 13.

[0316] Therefore, in this processing step S11, as shown by the arrow in (b) of Figure 17 , the support posts 45 are lowered so that the relatively thick region 201 of the processed film 20A is disposed above the blank region surface 101A, and thus it can be carried out including the placement step S12.

[0317] Embodiment

[0318] Hereinafter, the present invention will be specifically described by way of embodiments.

[0319] [1] Protective film

[0320] As the protective film 20, a protective film attached to a 12-inch ring frame is used.

[0321] The structure of the protective film 20, the base layer 21, the adhesive layer 22, and the uneven absorption layer 23 are as follows.

[0322] Material of the base layer 21: polyethylene terephthalate film, thickness: 75 μm.

[0323] Material of the adhesive layer 22: UV-curable acrylic adhesive, thickness: 10 μm.

[0324] Material of the uneven absorption layer 23: thermoplastic ethylene-α-olefin copolymer (density: 0.861 g / cm 3 , G’(25): 5.15 MPa, G’(60): 0.14 MPa, melt flow rate (190 °C): 2.9 g / 10 minutes), thickness: 510 μm.

[0325] [2] Semiconductor wafer

[0326] As the semiconductor wafer 10 provided with the bumps 11, a wafer with the following specifications is used.

[0327] Diameter: 300 mm.

[0328] Thickness: 810 μm.

[0329] Material: silicon.

[0330] Average height of the bumps 11: 200 μm.

[0331] Pitch of the bumps 11: 400 μm.

[0332] Non-convex bump region (peripheral region 13A): 3 mm from the outer periphery.

[0333] Non-convex bump region (blank region 13B as the recognition region): Figure 1 L in (a) of 1 has a length of 90 mm, Figure 1 L in (a) of 2 has a length of 7 mm.

[0334] [3] Attachment of the protective film

[0335] 〈Example 1〉

[0336] Prepare a vacuum laminator device (model "TPL-0612W" manufactured by Takatori Corporation), place a support member 33 formed in an annular shape in plan view (thickness: 1 mm, width W 1 : 5 mm) on the chuck table 31, and make the pressing surface 32A of the pressing member 32 made of iron.

[0337] After placing the semiconductor wafer 10 inside the support member 33, in the configuration step S1, the protective film 20 is supplied batchwise and configured to cover the main surface 10A of the semiconductor wafer 10.

[0338] Then, set the heating temperature of the protective film 20 to 80°C, and set the pressing force of the pressing member 32 to 0.7 MPa, and perform each step in the order of the attachment step S2 and the compression step S3 to attach the protective film 20 to the main surface 10A of the semiconductor wafer 10.

[0339] Then, at the peripheral portion of the protective film 20, cut off the excess portion that has overflowed from the outer peripheral edge of the semiconductor wafer 10 to obtain the sample of Example 1.

[0340] 〈Comparative Example 1〉

[0341] Use a roll attachment device (model "DR-3000II" manufactured by Nitto Seiki Co., Ltd.), without using the support member 33, and perform the same operations as in Example 1 to attach the protective film 20 to the main surface 10A of the semiconductor wafer 10, and cut off the excess portion at the peripheral portion of the protective film 20 to obtain the sample of Comparative Example 1.

[0342] 〈Comparative Example 2〉

[0343] Except that the pressing surface 32A is made of silicone rubber and the support member 33 is not used, perform the same operations as in Example 1 to attach the protective film 20 to the main surface 10A of the semiconductor wafer 10, and cut off the excess portion at the peripheral portion of the protective film 20 to obtain the sample of Comparative Example 2.

[0344] [4] Measurement of the unevenness on the surface of the protective film

[0345] At the end of the periphery of the semiconductor wafer, Figure 10 The position shown in the explanatory drawing at the lower part was set as the horizontal position of 0 mm and the vertical position of 0 μm, and the vertical position of the surface of the protective film at a predetermined horizontal position was measured. The results are shown in a curve in Figure 10 the upper part.

[0346] It should be noted that Figure 10 In the explanatory drawing at the lower part, with respect to the curve graph in the upper part, it is depicted in a corresponding manner with respect to the horizontal position, and exaggeratedly depicted with respect to the vertical position.

[0347] The vertical position of the surface of the protective film was measured, and the following was found from the curve graph of Figure 10 As follows.

[0348] In Example 1, there was almost no height difference in the vertical position at any horizontal position, and the surface of the protective film was flat.

[0349] In Comparative Example 1, in the vicinity of the horizontal position of 4 mm, that is, in the second region, the vertical position became lower, and in the range of the horizontal position of 7 to 8 mm, that is, in the first region, the vertical position became higher. From this result, it can be seen that in Comparative Example 1, corresponding to the step generated between the second region and the first region, a depression was formed on the surface of the protective film in the second region.

[0350] In Comparative Example 2, in the range where the horizontal position is 5 mm or less, that is, in the second region, there is a tendency for the vertical position to become higher, while on the other hand, in the range where the horizontal position is 7 mm or more, that is, in the first region, there is a tendency for the vertical position to become lower. From this result, it can be seen that in Comparative Example 2, due to the spread of the influence of the step generated between the second region and the first region, in the second region, the protective film bends in a parabolic shape, and in the first region, a depression is formed on the surface of the protective film.

[0351] Industrial Applicability

[0352] The method for attaching the protective film of the present invention is widely used in the use of manufacturing semiconductor components. In particular, for a semiconductor wafer subjected to a back grinding process, it has the characteristic of being able to flatten the surface of the protective film well, and thus is suitable for manufacturing components with excellent productivity.

[0353] Symbol Explanation

[0354] 10: Semiconductor wafer, 10A: Main surface, 11: Bump, 12: First region, 13: Second region, 13A: Peripheral region, 13B: Blank region, 14: Chamfered portion, 20: Protective film, 20A: Processed film, 21: Base layer, 22: Adhesive material layer, 23: Concavo-convex absorption layer, 30: Bonding device, 31: Chuck table, 32: Pressing member, 32A: Pressing surface, 33: Supporting member, 33A: Supporting surface, 40: Processing device, 41: First roller, 42: Second roller, 43: Protrusion, 45: Support post, 46: Pressing body.

Claims

1. A method for pasting a protective film, characterized in that, it comprises: a disposing step of disposing the protective film so as to cover the main surface of the semiconductor wafer; and a pasting step of pressing and pasting the protective film onto the main surface, the main surface has a first region and a second region, the first region is provided with bumps, and the second region is a region including at least a part of the periphery of the main surface and is a region where no bumps are provided, the pasting step includes a compressing step of compressing the protective film in its thickness direction, the compressing step is performed using a pressing member for pressing the protective film onto the main surface and a support member provided along the outer periphery of the second region, the disposing step is a step of disposing the protective film attached to the annular frame so as to cover the main surface of the semiconductor wafer after the semiconductor wafer is disposed inside the support member, the compressing step is a step of compressing the edge portion of the protective film by sandwiching the edge portion between the support member and the pressing member with the support member supporting the edge portion of the protective film, thereby restricting the flow of the film thickness portion of the protective film to the outside beyond the periphery of the main surface.

2. The method for pasting a protective film according to claim 1, wherein, the disposing step is a step of disposing the protective film such that the edge portion of the protective film extends outward from the periphery of the second region.

3. The method for pasting a protective film according to claim 1, wherein, in the support member, the support surface for supporting the edge portion of the protective film is parallel to the main surface or inclined toward the main surface side.

4. The method for pasting a protective film according to claim 3, wherein, When the gap between the main surface of the semiconductor wafer and the pressing surface of the pressing member is set to C 1 , and the gap between the supporting surface of the supporting member and the pressing surface of the pressing member is set to C 2 , in this case, C 1 > C 2 .

5. The method for pasting a protective film according to claim 1, wherein, the protective film has a layer capable of exhibiting fluidity or plasticity.

6. The method for pasting a protective film according to claim 5, wherein, the compressing step is performed in a state where the protective film is heated to exhibit the fluidity or the plasticity.

7. The method for pasting a protective film according to claim 1, wherein, when the average height of the bumps is set to H1 and the average thickness of the protective film is set to H2, 0.5 ≤ H2 / H1.

8. A method for manufacturing a semiconductor component, characterized in that, it includes the method for pasting a protective film according to any one of claims 1 to 7.

9. A protective film, characterized in that, it is used for the method for pasting a protective film according to any one of claims 1 to 7.

10. A method for pasting a protective film, characterized in that, it comprises: a disposing step of disposing the protective film so as to cover the main surface of the semiconductor wafer; and a pasting step of pressing and pasting the protective film onto the main surface, the main surface has a first region and a second region, the first region is provided with bumps, and the second region is a region including at least a part of the periphery of the main surface and is a region where no bumps are provided, the pasting step includes a compressing step of compressing the protective film in its thickness direction, The compression step is performed using a pressing member for pressing the protective film against the main surface and a support member provided along the outer peripheral edge of the second region. The positioning step is a step of positioning the protective film such that an edge portion of the protective film is located on the inner peripheral side of the support member. The compression step is a step of compressing the edge portion by blocking, with the inner peripheral surface of the support member, the bulging of the protective film in the outer peripheral direction of the second region due to being sandwiched between the pressing member and the main surface, and using the pressing member, the inner peripheral surface of the support member, and the main surface.

11. The method for attaching a protective film according to claim 10, wherein, the protective film has a layer capable of exhibiting fluidity or plasticity.

12. The method for attaching a protective film according to claim 11, wherein, the compression step is performed in a state where the protective film is heated to exhibit the fluidity or the plasticity.

13. The method for attaching a protective film according to claim 10, wherein, when the average height of the bump is set to H1 and the average thickness of the protective film is set to H2, 0.5 ≤ H2 / H1.

14. A method for manufacturing a semiconductor component, characterized in that, it includes the method for attaching a protective film according to any one of claims 10 to 13.

15. A protective film, characterized in that, it is used for the method for attaching a protective film according to any one of claims 10 to 13.

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