Wilkinson divider

Abstract

A hybrid millimeter-wave Wilkinson divider comprises an input port (1), a first output port (2), a second output port (3), and a transmission line. The input port (1) is connected to the first and second output ports (2, 3) via the transmission line in a carrier substrate (PCB, 31). An isolation resistor of the Wilkinson divider connected between the first and second output ports (2, 3) is integrated into a monolithic microwave integrated circuit (MMIC) chip (40) mounted on the carrier substrate. On the MMIC chip, the isolation resistor is connected between RF input metal pads. A compensation circuit for parasitic capacitance caused by the RF input metal pads is provided on the MMIC chip (40), so that the on-chip resistor appears as a pure resistor to the output ports (2, 3) of the Wilkinson divider on the carrier substrate (PCB, 31).

Description

Technical Field

[0001] The present invention relates to millimeter wave devices, and in particular to a millimeter wave Wilkinson divider and a millimeter wave phased array. Background Art

[0002] The use of a three-port power divider is particularly important for antenna array systems that utilize power splitting networks (such as cooperative or parallel feed systems). Coordination is simply a strategy for splitting power among n output ports while maintaining equal path lengths from the input to the output port. It can be implemented using an n-way power splitter, in which a three-port power divider is often used.

[0003] The Wilkinson power divider is a three-port network that is lossless when the output ports are matched; only the reflected power is dissipated. It can split the input power into two or more in-phase signals with the same amplitude. Figure 1 As shown in FIG, the Wilkinson divider circuit may include two quarter wavelength (λ / 4) transmission lines TL1 and TL2 directly connected together at one end (port 1), and a resistor R connected between the other ends of the transmission lines (ports 1 and 3). s . Resistor R s Port 2 and port 3 are isolated and all three ports are allowed to match. Typically, for an equal-amplitude combiner / divider in a Z0 impedance system, the transmission lines TL1 and TL2 have a characteristic impedance of Z0√2 and the lumped isolation resistor is 2Z0 and all three ports are matched, resulting in high isolation between the output ports. Due to the symmetry, equal-amplitude, in-phase combining / distribution is automatically guaranteed. A section of the transmission line with an impedance of Z0 can be further connected to each of the three ports. For the case of an equal-amplitude combiner / divider in a 50Ω system, the resistance of the resistor is 100Ω and the characteristic impedance of both transmission lines TL1 and TL2 is 50√2Ω (~70.7Ω). The design of the equal-amplitude (3dB) Wilkinson is often made in stripline or microstrip form. The isolation resistor R is usually implemented with the help of a discrete resistor, such as a surface mount device (SMD) resistor. s , the surface mount device (SMD) resistor is the preferred technology for resistors in modern printed circuits. SMD resistors are available in different sizes, which means that different sized pads are required to attach (solder) the isolated resistor.

[0004] Antenna arrays, or phased array antennas, are often used in modern telecommunications and radar systems. As is well known in the art, phased arrays include multiple radiating elements, such as 16, 64, or 256 elements. A power distribution network or feed network is provided that splits the signal power from a single input (a transmitter) between multiple output ports (multiple radiating elements). In essence, like a Wilkinson power divider, each 2-way power split can be performed compliantly. Figure 2 The figure shows a 1-to-8 feed network 2, in which the Tx signal is split by a first Wilkinson splitter W1 into two parallel 1-to-4 feed networks W2, W3, W4 and W2', W3', W4', respectively, feeding a total of eight output or radiating elements AF1-AF8n. The Wilkinson splitter feed network requires a lot of wiring, but on the other hand, it ensures signal amplitude and phase consistency among all front ends. However, as the size of the array grows, the amount of wiring and the size of the feed network increase rapidly.

[0005] Millimeter wave bands have been commonly used in radar systems. Recently, because microwave bands used in mobile cellular systems such as the Global System for Mobile Communications (GSM) and the Universal Mobile Telecommunications System (UMTS) cannot support high data rate services, millimeter wave bands have received more attention, such as the 60 GHz band, which can provide several GHz of bandwidth for these short-range communications. In addition, communication in the 60 GHz band has certain advantages, such as the possible miniaturization of simulation components and antennas.

[0006] It is also possible to use a Wilkinson divider configuration for the millimeter wave antenna array feed network. In one approach, the feed network for the antenna array includes a stripline Wilkinson divider on a PCB. However, a challenge in a PCB environment is the implementation of the isolation resistors for the Wilkinson divider. Discrete resistors such as SMD resistors at frequencies of 60 GHz and higher are expensive, and for large arrays, they may not be easy to assemble. An alternative approach could be LTCC (low temperature co-fired ceramic) technology, which has "built-in" resistors, but the price of LTCC technology is higher than that of basic PCB technology.

[0007] The Wilkinson power splitter can also be implemented using monolithic millimeter-wave integrated circuit (MMIC) technology, where the passive components and interconnects are fabricated on the same semiconductor substrate as the active devices. An example of this approach is disclosed in Samet Zihir et al., “60-GHz 64- and 256-Elements Wafer-Scale Phased-Array Transmitters Using Full-Reticle and Subreticle Stitching Techniques,” IEEE Transactions on Microwave Theory and Techniques, Vol. 64, No. 12, pp. 4701-4719, December 2016. The same silicon wafer is used for the RF distribution network, power, and SPI distribution, and the phased array channel antennas are located on a separate quartz wafer mounted on top of the silicon wafer. The 1-64 distribution network distributes power equally to all phased array channels that are on the same die and are very similar to each other.

[0008] However, a problem with such on-chip power splitters is that they consume expensive MMIC area and, in addition, may result in additional power losses due to the additional wiring required between the phased array elements. Summary of the Invention

[0009] One aspect of the present invention provides a novel Wilkinson divider for millimeter-wave frequencies that offers a cost-effective and feasible implementation, particularly in large array feed networks. This aspect of the invention is characterized by what is stated in the independent claim. Preferred embodiments of the invention are disclosed in the dependent claims.

[0010] One aspect of the present invention is a hybrid millimeter-wave Wilkinson divider device comprising

[0011] carrier substrate,

[0012] an input port, a first output port, a second output port, and a transmission line in the carrier substrate, wherein the input port is connected to the first output port and the second output port via the transmission line,

[0013] An isolation resistor is connected between the first output port and the second output port, and the isolation resistor of the Wilkinson divider is integrated into a monolithic microwave integrated circuit (MMIC) chip mounted on a carrier substrate, wherein the MMIC chip includes a first input metal pad and a second input metal pad respectively connected to the first output port and the second output port on the carrier substrate, and wherein in the MMIC chip the isolation resistor is connected between the first input metal pad and the second input metal pad, and the MMIC chip further includes a first parallel resonant circuit for compensating for a parasitic capacitance of the first input metal pad and a second parallel resonant circuit for compensating for a parasitic capacitance of the second input metal pad.

[0014] Another aspect of the present invention is a hybrid millimeter wave device comprising

[0015] carrier substrate,

[0016] at least one monolithic microwave integrated circuit (MMIC) chip mounted on a carrier substrate,

[0017] a signal distribution network configured to feed an input signal to a plurality of outputs, the signal distribution network comprising a plurality of Wilkinson dividers, each of the plurality of Wilkinson dividers comprising an input port, a first output port, a second output port, a transmission line connecting the input port to the first output port and the second output port, and an isolation resistor connected between the first output port and the second output port, and

[0018] wherein the transmission line of each Wilkinson divider is implemented in a carrier substrate, and the isolation resistor of each Wilkinson divider is integrated in at least one MMIC chip, and

[0019] The MMIC chip includes a first input metal pad and a second input metal pad respectively connected to a first output port and a second output port on a carrier substrate, and an isolation resistor is connected between the first input metal pad and the second input metal pad in the MMIC chip, and the MMIC chip also includes a first parallel resonant circuit for compensating for the parasitic capacitance of the first input metal pad and a second parallel resonant circuit for compensating for the parasitic capacitance of the second input metal pad.

[0020] In an embodiment, the signal distribution network is a 1 to 4, 1 to 8, 1 to 16, 1 to 64, 1 to 256, or 1 to 512 network, or any combination thereof.

[0021] In an embodiment, the first parallel resonant circuit includes a first inductor connected from a first input metal pad to ground in the MMIC chip and thus in parallel with a parasitic capacitance of the first input metal pad, and whereby the second parallel resonant circuit includes a second inductor connected from a second input metal pad to ground in the MMIC chip and thus in parallel with a parasitic capacitance of the second input metal pad.

[0022] In an embodiment, the MMIC chip includes a third metal pad and a fourth metal pad connected to ground, and wherein the first inductor is connected between the first input metal pad and the third metal pad, and wherein the second inductor is connected between the second input metal pad and the fourth metal pad.

[0023] In an embodiment, the third metal pad and the fourth metal pad are configured as ground contacts between the MMIC chip and the carrier substrate.

[0024] In an embodiment, the MMIC chip further includes at least one additional integrated component and / or electronic circuit. In an embodiment, the carrier substrate is based on printed circuit board (PCB) technology, low temperature co-fired ceramic (LTCC) technology, integrated passive device (IPD) technology, or a quartz substrate. Another aspect of the present invention is a millimeter wave phased array comprising at least one or more millimeter wave Wilkinson divider devices according to an embodiment of the present invention.

[0025] Another aspect of the present invention is a monolithic microwave integrated circuit (MMIC) chip comprising

[0026] at least a first input metal pad and a second input metal pad for mounting the MMIC chip on a carrier substrate,

[0027] at least one integrated isolation resistor configured to be connected to a transmission line in the carrier substrate via the first input metal pad and the second input metal pad to form a hybrid millimeter-wave Wilkinson divider with the carrier substrate transmission line when the MMIC chip is mounted on the carrier substrate, and

[0028] The MMIC chip includes a first parallel resonant circuit and a second parallel resonant circuit on the MMIC chip, the first parallel resonant circuit and the second parallel resonant circuit being configured to compensate for the parasitic capacitances of the first input metal pad and the second input metal pad, respectively, and the first parallel resonant circuit preferably includes a first inductor connected from the first input metal pad to the ground and thus connected in parallel with the parasitic capacitance of the first input metal pad, and the second parallel resonant circuit preferably includes a second inductor connected from the second input metal pad to the ground and thus connected in parallel with the parasitic capacitance of the second input metal pad.

[0029] In an embodiment, the MMIC chip includes a third metal pad and a fourth metal pad connected to ground, and wherein the first inductor is connected between the first input metal pad and the third metal pad, and wherein the second inductor is connected between the second input metal pad and the fourth metal pad, and wherein the third metal pad and the fourth metal pad are preferably configured as ground contacts between the MMIC chip and the carrier substrate.

[0030] In an embodiment, an MMIC chip includes a plurality of integrated isolation resistors with corresponding pairs of first input metal pads and second input metal pads, the plurality of integrated isolation resistors being connected to a plurality of transmission lines in a carrier substrate to form a plurality of hybrid millimeter-wave Wilkinson dividers, and wherein the MMIC chip optionally includes at least one additional integrated component and / or electronic circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In the following, the invention will be described in more detail with the aid of exemplary embodiments with reference to the accompanying drawings, in which

[0032] Figure 1 The figure shows the basic configuration of the Wilkinson power divider;

[0033] Figure 2 is a schematic block diagram illustrating an exemplary 1 to 8 power distribution network;

[0034] Figure 3 A top view of a hybrid Wilkinson power divider according to an embodiment of the present invention is shown;

[0035] Figure 4 A partial cross-sectional perspective view of a multi-layer PCB is shown;

[0036] Figure 5 FIGURE 1 illustrates an exemplary design of a hybrid Wilkinson power divider according to an embodiment of the present invention;

[0037] Figure 6 FIG. 1 illustrates an exemplary design of an MMIC chip resistor according to an embodiment of the present invention;

[0038] Figure 7 FIGURE 1 illustrates an exemplary design of a 1-to-4 feeding network including three hybrid Wilkinson power dividers according to an embodiment of the present invention;

[0039] Figure 8 schematically illustrates an exemplary MMIC chip including a plurality of MMIC isolation resistors and other circuitry according to an embodiment of the present invention; and

[0040] Figure 9 、 101 and 11 show S-parameter graphs for a 1 to 4 feed network where port 1 is "IN" and ports 2-5 are "AF1-AF4" respectively. Figure 7 ) respectively illustrate the simulated port matching, simulated coupling, and simulated isolation in function of signal frequency (60-90GHz). DETAILED DESCRIPTION

[0041] One aspect of the present invention is a hybrid Wilkinson power divider or splitter that uses a carrier substrate or board for transmission line routing and monolithic millimeter wave integrated circuit (MMIC) technology for resistor implementation. The transmission line can be implemented in various alternative structures such as microstrip, stripline, coplanar waveguide (CPW), etc. In the exemplary embodiment, the transmission line is primarily implemented using microstrip lines, but the embodiments of the present invention are not limited to the use of microstrip lines. A carrier substrate or board (which can also be referred to as an RF platform) suitable for embodiments of the present invention can be manufactured using various different types of technologies such as printed circuit boards (PCBs), low temperature co-fired ceramics (LTCCs), integrated passive devices (IPDs), quartz wafers, etc. PCB technology will be used as an example to describe and illustrate the exemplary embodiments herein, and it is not intended to limit the embodiments of the present invention to this technology. The novel hybrid (e.g., PCB / MMIC or LTCC / MMIC) Wilkinson power divider design can result in minimal signal loss due to routing and minimal MMIC area consumption. The use of PCB technology for transmission line routing and the implementation of isolation resistors with very small MMIC area results in a very cost-effective Wilkinson design compared to conventional designs. The low manufacturing cost of the Wilkinson divider is particularly advantageous in applications with large arrays, such as in 5G telecommunications applications, where each lamppost can have a phased array radio front end with hundreds of radiating elements.

[0042] exist Figure 3 The figure shows an example of a hybrid Wilkinson power divider according to an embodiment of the present invention. The exemplary Wilkinson divider 30 has transmission lines and wiring in the form of microstrip lines 32 in one or more conductive layers (e.g., metal layers) of a carrier substrate (e.g., a printed circuit board PCB) 31. In an embodiment, the carrier substrate 31 can be a multi-layer carrier substrate (e.g., a PCB or LTCC), and at least a portion of the microstrip lines 32 implementing the transmission line wiring can be provided in an intermediate conductive layer between dielectric layers 33, for example, in Figure 4 However, any one or more of the conductive layers, such as the top and bottom conductive layers 34 and 35, and possibly other layers, may be utilized for transmission line routing. The dielectric layer 33 of the carrier substrate 31 may be made of any suitable dielectric material. Figure 3In FIG, an MMIC chip resistor 40 is mounted on a carrier substrate 31 and connected between output ports 2 and 3. Contact bumps or pads 41 and 42 may be provided for making the connection.

[0043] exist Figure 5 The figure shows an exemplary model of a hybrid Wilkinson power divider according to an embodiment of the present invention. Port 1 is connected to a T-branch microstrip line SL1 (e.g., a width of 1 mm at input branch 3 and a width of 2 mm at output branches 1 and 2) via a transmission line TL5 (e.g., a straight microstrip line with a length of 4 mm and a width of 1 mm). A series connection of a straight transmission line TL8 (e.g., a straight microstrip line with a length of 1 / 2 mm and a width of 2 mm), an angle microstrip line SL3 (e.g., a width of 2 mm), a straight transmission line TL6 (e.g., a straight microstrip line with a length of 1 / 2 mm and a width of 2 mm), an angle microstrip line SL4 (e.g., a width of 2 mm), and a straight transmission line TL8 (e.g., a straight microstrip line with a length of 1 / 2 mm and a width of 2 mm) is connected to one input branch (e.g., branch 2) of a T-branch microstrip line SL61 (e.g., a width of 2 mm at input branches 1 and 2 and 3 mm at output branch 3). The output of the T-branch microstrip line SL16 is connected to port 2 of the Wilkinson divider via a series connection of an angle microstrip line SL18 (e.g., having a width of 3 mm) and a straight transmission line TL10 (e.g., a straight microstrip line having a length of 3 mm and a width of 3 mm). Figure 5 The upper part of the Wilkinson divider shown in Figure 3 In or roughly Figure 1 . Similarly, a series connection of a straight transmission line TL12 (e.g., a straight microstrip line having a length of 1 / 2 mm and a width of 2 mm), a corner microstrip line SL2 (e.g., having a width of 2 mm), a straight transmission line TL7 (e.g., a straight microstrip line having a length of 1 mm and a width of 2 mm), a corner microstrip line SL5 (e.g., having a width of 2 mm), and a straight transmission line TL13 (e.g., a straight microstrip line having a length of 1 / 2 mm and a width of 2 mm) is connected to one input branch (e.g., branch 1) of a T-branch microstrip line SL17 (e.g., having a width of 2 mm at input branches 1 and 2 and 3 mm at output branch 3). The output of the T-branch microstrip line SL17 is connected to port 3 of the Wilkinson divider via a series connection of a corner microstrip line SL19 (e.g., having a width of 3 mm) and a straight transmission line TL10 (e.g., a straight microstrip line having a length of 3 mm and a width of 3 mm). Thus, Figure 5 The lower part of the Wilkinson divider shown in Figure 3 In or roughly Figure 13. The transmission line between ports 1 and 3 in the Wilkinson divider is shown in FIG. In addition, branch 1 of T-branch microstrip line SL16 is connected to RF pad 42 on carrier substrate 31, and branch 2 of T-branch microstrip line SL17 is connected to RF pad 41 on carrier substrate 31. An MMIC chip resistor 40 implementing an isolation resistor Rs (e.g., 80 ohms) is connected between RF pads 41 and 42, and thus between ports 2 and 3 of the Wilkinson divider.

[0044] exist Figure 6 The figure shows an exemplary model of an MMIC chip resistor 40 according to an embodiment of the present invention. The exemplary MMIC chip resistor 40 may include a first radio frequency (RF) input metal pad X1 and a second radio frequency (RF) input metal pad X3. The first radio frequency (RF) input metal pad X1 may be connected to a corresponding RF pad 42 on a carrier substrate 31, and the second radio frequency (RF) input metal pad X3 may be connected to a corresponding RF pad 41 on the carrier substrate 31. The exemplary MMIC chip 40 further includes an isolation resistor R integrated on the chip. s . The isolation resistor Rs can be implemented in any form that is suitable for MMIC technology. Examples of different types of MMIC resistors include polysilicon resistors and diffused resistors for CMOS, NiCr resistors for GaAS, and so on. The material can be, for example, tantalum or nitride. Resistor Rs can be a thin film MMIC resistor. In an exemplary embodiment, resistor Rs can be an 80 ohm tantalum thin film resistor. Resistor Rs is connected between the RF input metal pads X1 and X3 by appropriate means (for example, by means of metal lines L2 and L3).

[0045] RF input metal pads X1 and X3 may have parasitic capacitance toward ground potential. In an embodiment, a compensation circuit for the parasitic capacitance caused by RF input metal pads X1 and X3 may be provided on MMIC chip 40, so that on-chip resistor Rs appears as a pure resistor to ports 2 and 3 of the Wilkinson divider on carrier substrate 31. In an embodiment, the compensation circuit may be configured to generate a parallel resonant circuit about the corresponding RF input metal pad X1 or X3, thereby resonating out the effect of the parasitic capacitance. In an embodiment, a metal pad X2 connected to a reference potential or ground may be provided on the chip adjacent to RF input metal pad X1. In addition, an inductor L1 (e.g., a metal wire) is connected between metal pads X1 and X2 in parallel with the parasitic capacitance caused by RF input metal pad X1. This results in a parallel resonant circuit that compensates for the parasitic capacitance of RF input metal pad X1. Similarly, a metal pad X4 connected to a reference potential or ground may be provided on the chip adjacent to RF input metal pad X3. Additionally, an inductor L4 (eg, a metal line) may be connected between metal pads X3 and X4 in parallel with the parasitic capacitor caused by the RF input metal pad X3, thereby obtaining a parallel resonant circuit that compensates for the parasitic capacitance of the RF input metal pad X3.

[0046] In an embodiment, ground metal pads X2 and X4 are configured as ground contacts between the MMIC chip and carrier substrate 31, i.e., to contact corresponding ground pads on carrier substrate 31. Therefore, metal pads X2 and X4 are connected or grounded to both the local ground of the MMIC chip and the ground of carrier substrate 31, i.e., the MMIC chip and carrier substrate 31 share the same ground. Therefore, a well-defined return path, i.e., a common ground, can be obtained for the return current of the resonant circuit.

[0047] A hybrid Wilkinson divider according to an embodiment of the present invention can be employed as a building element to construct a larger feeding network, such as Figure 2 The 1 to 8 feed network 2 is shown in the figure. Figure 7 The figure shows an exemplary model of a 1 to 4 feed network 70 including three hybrid Wilkinson power dividers according to an embodiment of the present invention. The feed network 70 may, for example, implement two parallel 1 to 4 feed networks W2, W3, W4 and W2', W3', W4', respectively, feeding eight output or radiating elements FA1-FA8. Figure 3-7 In the drawings, the same reference numerals denote the same or similar structures or functions. Similarly, a larger feed or power divider network can be provided to feed, for example, 16, 64, 256, or 512 elements.

[0048] In an embodiment, the MMIC chip contains integrated isolation resistors for a hybrid Wilkinson divider with striplines for transmission line routing on a carrier substrate on which the MMIC chip is to be mounted.

[0049] In an embodiment, an MMIC chip contains integrated isolation resistors for multiple hybrid Wilkinson dividers (ie, two or more dividers) with striplines for transmission line routing on a carrier substrate on which the MMIC chip is to be mounted.

[0050] In an embodiment, in addition to the one or more integrated isolation resistors, the MMIC chip further includes additional MMIC components and / or electronic circuits, such as any one or more of passive components, active components, analog circuits, digital circuits, control circuits, etc. The MMIC area saved by using a hybrid Wilkinson divider according to an embodiment of the present invention can allow for more additional circuits on the same chip area, or allow for the same circuits with a smaller MMIC chip area.

[0051] Figure 8 The schematic diagram illustrates an exemplary MMIC chip including a plurality of MMIC isolation resistors 40 according to an embodiment of the present invention. The MMIC isolation resistors 40 are shown with diagonal fill. The MMIC isolation resistors 40 can be located on the MMIC chip 80 layout so that they are easily connectable to the transmission line wiring of the corresponding Wilkinson divider on the base carrier substrate when the MMIC chip is mounted. The positioning of each MMIC isolation resistor 40 and the associated contact pads X1 and X3, and optional ground pads X2 and X4 on the MMIC chip 80 layout can be such that there is an effective use of the area of ​​the MMIC chip with minimal wiring on the chip. The contact pads X1 and X3 of the MMIC isolation resistors 40, and the ground contact pads X2 and X3 can be located on the edge of the MMIC chip 80, for example as shown in FIG. Figure 8 The contact pads X1 and X3 of the MMIC isolation resistor and the ground contact pads X2 and X3 can also be close to the MMIC isolation resistor 40 on the MMIC chip 80 and away from the edge of the MMIC chip 80, as shown in FIG. Figure 8 As shown in the figure. Figure 8 The MMIC chip 80 shown in FIG. 8 may be suitable for example for Figure 2 1 to 8 feed network 2 is shown in FIG. MMIC chip 80 may also include additional MMIC components and / or electronic circuits, such as element 81 shown by dashed lines. Such components may include any one or more of passive components, active components, analog circuits, digital circuits, control circuits, etc.

[0052] Figure 9 、 10 1 and 11 are S-parameter graphs for a 1 to 4 feed network where port 1 is "IN" and ports 2-5 are "AF1-AF4" respectively. Figure 7 ) illustrate simulated port matching, simulated coupling, and simulated isolation as a function of signal frequency (60-90 GHz). These simulations demonstrate the excellent performance of a hybrid Wilkinson divider according to an embodiment of the present invention. Embodiments of the present invention are not intended to be limited to these exemplary frequencies, but are applicable to all microwave and millimeter wave signals, and are particularly applicable to frequencies above 20 GHz.

[0053] It will be obvious to a person skilled in the art that the invention and its embodiments are not limited to the examples described above, but they may vary within the scope of the claims.

Claims

1. A hybrid millimeter-wave Wilkinson divider device comprising carrier substrate, an input port, a first output port, a second output port, and a transmission line, wherein the input port is connected to the first output port and the second output port by the transmission line in the carrier substrate. an isolation resistor connected between the first output port and the second output port, and the isolation resistor of the Wilkinson divider is integrated into a monolithic microwave integrated circuit chip mounted on the carrier substrate, wherein The monolithic microwave integrated circuit chip includes a first input metal pad and a second input metal pad respectively connected to a first output port and a second output port on the carrier substrate, and wherein the isolation resistor is connected between the first input metal pad and the second input metal pad in the monolithic microwave integrated circuit chip, and the monolithic microwave integrated circuit chip also includes a first parallel resonant circuit for compensating for the parasitic capacitance of the first input metal pad and a second parallel resonant circuit for compensating for the parasitic capacitance of the second input metal pad.

2. A hybrid millimeter wave device comprising carrier substrate, at least one monolithic microwave integrated circuit chip mounted on said carrier substrate, a signal distribution network configured to feed one input signal to a plurality of outputs, the signal distribution network comprising a plurality of Wilkinson dividers, each of the plurality of Wilkinson dividers comprising an input port, a first output port, a second output port, a transmission line connecting the input port to the first output port and the second output port, and an isolation resistor connected between the first output port and the second output port, in, The transmission line of each Wilkinson divider is implemented in the carrier substrate, and the isolation resistor of each Wilkinson divider is integrated in at least one monolithic microwave integrated circuit chip, and wherein the monolithic microwave integrated circuit chip includes a first input metal pad and a second input metal pad respectively connected to a first output port and a second output port on the carrier substrate, and wherein in the monolithic microwave integrated circuit chip the isolation resistor is connected between the first input metal pad and the second input metal pad, and the monolithic microwave integrated circuit chip also includes a first parallel resonant circuit for compensating for the parasitic capacitance of the first input metal pad and a second parallel resonant circuit for compensating for the parasitic capacitance of the second input metal pad.

3. The device according to claim 2, wherein The signal distribution network is a 1 to 4, 1 to 8, 1 to 16, 1 to 64, 1 to 256, or 1 to 512 network, or any combination thereof.

4. The apparatus according to claim 1, 2 or 3, wherein: The first parallel resonant circuit includes a first inductor, which is connected from the first input metal pad to the ground in the monolithic microwave integrated circuit chip and is therefore connected in parallel with the parasitic capacitance of the first input metal pad, and the second parallel resonant circuit includes a second inductor, which is connected from the second input metal pad to the ground in the monolithic microwave integrated circuit chip and is therefore connected in parallel with the parasitic capacitance of the second input metal pad.

5. The device according to claim 4, wherein The monolithic microwave integrated circuit chip includes a third metal pad and a fourth metal pad connected to ground, and wherein the first inductor is connected between the first input metal pad and the third metal pad, and wherein the second inductor is connected between the second input metal pad and the fourth metal pad.

6. The device according to claim 5, wherein The third metal pad and the fourth metal pad are configured as ground contacts between the monolithic microwave integrated circuit chip and the carrier substrate.

7. The apparatus according to claim 1, 2 or 3, wherein: The monolithic microwave integrated circuit chip further comprises at least one additional integrated component and / or electronic circuit.

8. The apparatus according to claim 1, 2 or 3, wherein: The carrier substrate is based on printed circuit board (PCB) technology, low temperature co-fired ceramic (LTCC) technology, integrated passive device (IPD) technology, or a quartz substrate.

9. A millimeter wave phased array comprising a plurality of hybrid millimeter wave Wilkinson divider devices according to claim 1.

10. A millimeter wave phased array comprising at least one hybrid millimeter wave device according to any one of claims 2-8.

11. A monolithic microwave integrated circuit chip, comprising at least a first input metal pad and a second input metal pad for mounting the monolithic microwave integrated circuit chip on a carrier substrate, at least one integrated isolation resistor configured to be connected to a transmission line in the carrier substrate via the first input metal pad and the second input metal pad when the monolithic microwave integrated circuit chip is mounted on the carrier substrate to form a hybrid millimeter-wave Wilkinson divider with the transmission line in the carrier substrate, and in, The monolithic microwave integrated circuit chip includes a first parallel resonant circuit and a second parallel resonant circuit on the monolithic microwave integrated circuit chip, and the first parallel resonant circuit and the second parallel resonant circuit are configured to compensate for the parasitic capacitance of the first input metal pad and the parasitic capacitance of the second input metal pad, respectively.

12. The monolithic microwave integrated circuit chip according to claim 11, wherein: The first parallel resonant circuit includes a first inductor connected from the first input metal pad to ground and thus in parallel with the parasitic capacitance of the first input metal pad, and whereby the second parallel resonant circuit includes a second inductor connected from the second input metal pad to ground and thus in parallel with the parasitic capacitance of the second input metal pad.

13. The monolithic microwave integrated circuit chip according to claim 12, wherein: The monolithic microwave integrated circuit chip includes a third metal pad and a fourth metal pad connected to ground, and wherein the first inductor is connected between the first input metal pad and the third metal pad, and wherein the second inductor is connected between the second input metal pad and the fourth metal pad.

14. The monolithic microwave integrated circuit chip according to claim 13, wherein: The third metal pad and the fourth metal pad are configured as ground contacts between the monolithic microwave integrated circuit chip and the carrier substrate.

15. The monolithic microwave integrated circuit chip according to any one of claims 10 to 14, wherein: The monolithic microwave integrated circuit chip includes a plurality of integrated isolation resistors connected to a plurality of transmission lines in the carrier substrate with corresponding pairs of first and second input metal pads to form a plurality of hybrid millimeter-wave Wilkinson dividers.

16. The monolithic microwave integrated circuit chip according to claim 15, wherein: The monolithic microwave integrated circuit chip comprises at least one further integrated component and / or electronic circuit.

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