Zinc oxide resistive random access memory performance optimization method based on different vacancy concentrations

A technology of resistive memory and optimization method, applied in design optimization/simulation, special data processing applications, etc., can solve problems such as unstable performance, and achieve the effect of improving storage performance and increasing formation speed

CN113656950APending Publication Date: 2021-11-16XIAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2021-11-16

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Abstract

The invention discloses a zinc oxide resistive random access memory performance optimization method based on different vacancy concentrations. The method specifically comprises the following steps: taking a resistive layer as a research object of a zinc oxide resistive random access memory; constructing a ZnO single cell model by adopting a first principle calculation method based on a density functional theory; on the basis, expanding the ZnO single cell model towards the A direction, the B direction and the C direction to obtain a 3 * 2 * 2 ZnO super cell model and a 2 * 2 * 1 ZnO super cell model; constructing a vacancy defect state on the supercell model to obtain five zinc oxide resistive layer models; based on a first principle method, reducing the energy of five zinc oxide resistive layer model systems to the minimum, and enabling the structure to be optimal, so that the performance optimization of the zinc oxide resistive random access memory is realized. According to the invention, the energy state structure of the zinc oxide resistive random access memory is researched to determine the optimal vacancy concentration of the resistive random layer, so that the formation speed of the conductive filament can be effectively increased, and the storage performance of the resistive random access memory is improved.
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Description

technical field

[0001] The invention belongs to the technical field of performance research of a resistive variable memory, and relates to a method for optimizing the performance of a zinc oxide resistive variable memory based on different vacancy concentrations. Background technique

[0002] The development of network, big data, and electronic information technology makes our life more convenient and faster, but this is accompanied by problems such as information explosion caused by the rapid growth of global data production, so the memory used for data storage has huge applications Prospects, but it also brings serious challenges to the memory field. Zinc oxide (ZnO) is known as the most potential resistive memory material, the formation and fracture of its conductive filaments control the writing and erasing of data. The formation of conductive filaments is accompanied by changes in crystal structure and atomic migration barrier. Under the action of the applied voltage,...

Examples

Embodiment

[0042] This embodiment provides a method for optimizing the performance of a ZnO RRAM based on different vacancy concentrations, which specifically includes the following steps:

[0043] Taking the resistive layer as the research object of ZnO resistive memory, the ZnO single cell model is constructed by using the first-principle calculation method based on density functional theory. On this basis, the ZnO single cell model is extended to A, B, C extended in three directions to obtain a 3×2×2 ZnO supercell model and a 2×2×1 ZnO supercell model, construct vacancy defect states on the supercell model, and obtain five ZnO resistive switch layer models , based on the first-principle method, the energy of the five ZnO resistive variable layer model systems is minimized and the structure is optimized, and the performance optimization of the ZnO resistive variable memory is realized.

[0044] Specifically follow the steps below:

[0045] Step 1, taking the most stable wurtzite struc...