69results about How to "Increase the speed of formation" patented technology

An image forming apparatus is provided which includes a first image forming section for performing image formation based on monochromatic image data, and a second image forming section for performing image formation based on color image data. The first and second image forming sections are arranged in mutually different positions along a path for conveying recording paper. The image forming apparatus further includes an image processing section for outputting monochromatic image data and color image data, which have undergone image processing, to the first image forming section and the second image forming section respectively, at individual timings for forming images an either one or both sides of the recording paper.

A method for anodizing aluminum, wherein an object (29) made of aluminum or an aluminum alloy is anodized in an electrolytic solution (25), and thereby an anodized aluminum film is formed on a surface of the object (29), is provided. The electrolytic solution (25) is comprised of at least one acid selected from organic acids having two or more carboxylic groups, moves at an average speed of 15 cm / sec or less along at least an outer surface of the object (29). The anodization is performed under conditions that a temperature of the outer surface of the object (29) is 80° C. or less, and current density is in a range from 10 to 170 A / dm2.

A colloidal suspension of particles is rapidly self-assembled with a minimum number of defects into a densely packed array of particles on a substrate under simultaneous sedimentation and annealing forces. The particles may be ordered as an opal structure. Optionally, the synthesized structure may incorporate an electrolyte and be used as a sacrificial form for micromolding an inverse structure. The inverse structure may exhibit a photonic band gap. Optionally, necking between particles may be adjusted after micromolding. Furthermore, a shell may alter physical properties, such as protecting a thermally stimulated photonic band gap device. These low cost methods allow more applications to become commercially viable.

The invention discloses a producing method for a full-tantalum-gas sealed capacitor, belongs to a capacitor manufacture method and aims to provide a manufacture method for non-solid tantalum electrolytic capacitors. The method comprises calcining a green body with the press density ranging from 5.5g / cm3 to 7.5g / cm3 into an anode tantalum block, immersing the tantalum block in an electrolyte solution to perform electrochemical treatment according to a grading boosting mode, performing vacuum heat treatment on the anode tantalum block provided with dielectric oxidation film, immersing the anode tantalum in a phosphoric acid to perform secondary electrochemical treatment, cleaning and drying the anode tantalum block which is subjected to secondary electrochemical treatment, and packaging the anode block in a tantalum casing to be prepared into a capacitor product, putting the capacitor product in an aging device to perform heating and energizing aging. The capacitor product produced through the method has the advantages of being low in equivalent series resistance and impedance, small in leakage current and capacitance change and the like.

The invention belongs to the field of glass, and particularly discloses a scratch-proof float glass conveying device. The scratch-proof float glass conveying device comprises a transitional roller table and an annealing furnace which are successively connected to one side of a molten tin bath part, wherein a plurality of conveying rollers are arranged in each of the transitional roller table and the annealing furnace; the bottom sides of the conveying rollers are rotatably connected with a gas supply box; a supply opening is formed in the top of the gas supply box; each conveying roller is hollow; sealing plates are arranged at two ends of each conveying roller; an inner boss is arranged on the inner wall of each conveying roller; each inner boss is matched with a piston plate; a first compression cavity and a second compression cavity are formed by each piston plate and the corresponding conveying roller; air holes are formed in different ends of each first compression cavity and the corresponding second compression cavity; a spring is fixed between each piston plate and the sealing plate of the corresponding second compression cavity; a connecting rod is fixed at one end of each piston plate; one end, which is away from a piston of each connecting rod is statically connected with a cam; each cam comprises projections and pits; and one side of each cam is matched with an ejector rod. By the scheme, efficiency of forming a protecting film by SO2 gas and float glass can be improved, and pollution of SO2 gas to the environment can be reduced.

The invention discloses a high-efficiency environment-friendly pulse plating metallurgy method for performing thick chromium plating based on trivalent chromium in a sulfate system. The method is characterized by comprising the following steps: dissolving rare earth oxides in an acid, so as to obtain a rare-earth salt solution; dissolving chromium sulfate salt, aluminum sulfate, boric acid, a complexing agent and methanol with water, and adding the rare-earth salt solution, so as to obtain a chromium sulfate salt-aluminum sulfate-boric acid-complexing agent-methanol-rare-earth salt plating solution; electroplating a to-be-plated plating piece into the electroplating solution; controlling the electroplating process conditions as follows: the distance between a pulse electroplating power supply and a plating tank is 2-3m, a wire refers to a multi-stranded core wire, and an anode refers to a Cu-matrix coating electrode plate; the current density of a connecting wire is 28-90A / dm<2> and needs to be far higher than the average current, the pH value of the electroplating solution is 2-4, the temperature refers to 25-60 DEG C, the stirring speed is 100-600rpm, the plating time refers to 30-90 minutes, the pulse frequency refers to 100-500Hz, and the duty ratio is 5-100 percent; and washing the plating piece subjected to complete electroplating, and airing. The method disclosed by the invention has the advantages of coating flatness and compactness, good adhesiveness, high current efficiency, high environmental friendliness and the like.

The invention discloses a picea koraiensis tissue culture medium and a culture method. The method comprises the following steps: selecting picea koraiensis dormant buds, needles or tender stems as explants, and performing disinfection treatment; pretreating the explants before induction, and soaking the explants in an 8g / L NaCl solution for 3-5 minutes; performing callus tissue induction; performing proliferation of callus tissue; and inducing differentiation of buds. Based on the superiority of tissue culture, the method provided by the invention can solve the problems of low reproductive rate, low yield and the like of traditional manners of seed propagation, cutting propagation and the like to the greatest extent, and realizes the tissue culture of picea koraiensis; in addition, the success rate of taking dormant buds as the explants is the highest; and besides, the possibility of taking needles, tender stems and the like as the explants is also provided, so that the tissue cultureof the picea koraiensis is not only limited to picking the dormant buds in winter, but induction can still be performed by picking the needles and the tender stems in spring.

The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting a tuning condenser of a matching box toward the high frequency electrode is the high frequency electrode; placing a substrate on the susceptor electrode; applying high frequency electric power on the high frequency electrode and the susceptor electrode respectively; and forming a silicon oxide layer on the substrate by generating plasma with using a reaction gas of which main reaction gas is a mixing gas of monosilane and nitrous oxide.

A process of forming a polyol includes the steps of providing an alkylene oxide, providing an initiator composition having an average functionality of at least four, and providing an alkaline earth metal hydroxide and an amine. The process also includes the step of reacting the initiator composition and the alkylene oxide in the presence of the alkaline earth metal hydroxide and the amine to form the polyol. This allows the polyol to have consistent chain length and be formed with increased speed and in high yield, while reducing costs and maximizing efficiency. The polyol is reacted with an isocyanate and used to form a polyurethane article.

The present invention relates to continuous casting technology of monotectic alloy, and is especially continuous casting process of monotectic alloy sheet. In a common continuous sheet casting apparatus, constant magnetic field of 0.3-1 tesla strength is applied to the cooling section and the crystallizing section. The constant magnetic field can increase the effective viscosity of alloy melt, retard the moving speed of dispersed phase liquid drop in liquid-liquid phase change temperature region in monotectic alloy, reduce the collision coalescence coursing speed of dispersed phase liquid drop and the separation speed of two liquid phase and decrease segregation of alloy, so that the said process of the present invention can obtain monotectic alloy with homogeneous dispersed phase particle distribution.

The present invention relates to a preparation method of an N-type crystalline silicon cell, a cell thereof, a battery and a system. The preparation method of the N-type crystalline silicon cell comprises the following steps of texturing, conducting the boron diffusion operation on the front surface to form a borosilicate glass layer, conducting the etching and boron diffusion operation on the back surface, enabling edge isolation, cleaning, plating a film, printing and sintering. The invention has the following beneficial effects: through adjusting the process parameters of boron diffusion, the borosilicate glass layer formed through boron diffusion has the ability of preventing the phosphorous diffusion, so that a simple N-type crystalline silicon cell fabrication process is developed; the process is simple, controllable, low in equipment investment; based on the diffusion method, formed PN junctions are less in pollution and better in quality compared with PN junctions formed through the boron- source spin coating process or the screen printing process; the diffusion coefficient of boron in silicon dioxide is higher than that of silicon, so that a thick borosilicate glass layer facilitates the reduction of the boron concentration on the surface of a p + region so as to reduce the surface recombination and improve the open-circuit voltage. The prepared N-type crystalline silicon cell is higher in open-circuit voltage and better in photoelectric conversion efficiency.

The invention belongs to the technical field of winter jujube tree wound protection, and particularly relates to a winter jujube tree cutting opening protection agent and a preparation method thereof. The winter jujube tree cutting opening protection agent comprises the following components: corn oil, sesame oil, washing powder, pitaya pulp, shell powder, a penetrant and pig blood powder. The obtained winter jujube tree cutting opening protection agent is specially used for protecting winter jujube tree cuts, has obvious action effect, greatly improves the cutting opening healing rate, remarkably shortens healing time, is low in cost and simple to prepare, can be prepared by jujube farmers, is convenient to use, is used for directly spraying after a cutting opening is flattened by a branch cutting tool, and is green, environment-friendly, free of waste and pollution-free.