Preparation method of N-type crystalline silicon cell, cell thereof, battery and system

Abstract

The present invention relates to a preparation method of an N-type crystalline silicon cell, a cell thereof, a battery and a system. The preparation method of the N-type crystalline silicon cell comprises the following steps of texturing, conducting the boron diffusion operation on the front surface to form a borosilicate glass layer, conducting the etching and boron diffusion operation on the back surface, enabling edge isolation, cleaning, plating a film, printing and sintering. The invention has the following beneficial effects: through adjusting the process parameters of boron diffusion, the borosilicate glass layer formed through boron diffusion has the ability of preventing the phosphorous diffusion, so that a simple N-type crystalline silicon cell fabrication process is developed; the process is simple, controllable, low in equipment investment; based on the diffusion method, formed PN junctions are less in pollution and better in quality compared with PN junctions formed through the boron- source spin coating process or the screen printing process; the diffusion coefficient of boron in silicon dioxide is higher than that of silicon, so that a thick borosilicate glass layer facilitates the reduction of the boron concentration on the surface of a p + region so as to reduce the surface recombination and improve the open-circuit voltage. The prepared N-type crystalline silicon cell is higher in open-circuit voltage and better in photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing an N-type crystalline silicon cell and the cell, component and system thereof. Background technique [0002] A solar cell is a semiconductor device that converts solar energy into electricity. At present, the mainstream products in the industry are P-type crystalline silicon solar cells. The battery process is simple, but it has a light-induced decay effect, that is, the efficiency of the battery will gradually decay with time, which is mainly due to the combination of boron atoms doped into the P-type silicon substrate and oxygen atoms in the substrate. Produces boron-oxygen pair results. Studies have shown that the boron-oxygen pair acts as a carrier trap, reducing the minority carrier lifetime, which leads to the attenuation of the photoelectric conversion efficiency of the battery. Compared with P-type crystalline silicon solar cells, N-type crys...

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Problems solved by technology

The disadvantages of this solution are: 1) spin coating and drying equipment need to be added; 2) in order to meet the requirements of spin coating, certain organic solvents or surfactants must be added to the boron source, and these substances cannot be completely removed after drying. At the same time, some pollution is inevitably introduced in the spin coating operation, which will affect the quality of the PN junction formed by subsequent high-temperature doping; 3) The front BSG layer formed by the spin coating method is relatively loose, and it is difficult to completely block the diffusion of phosphorus

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