Zinc oxide resistive random access memory performance optimization method based on different vacancy concentrations

Abstract

The invention discloses a zinc oxide resistive random access memory performance optimization method based on different vacancy concentrations. The method specifically comprises the following steps: taking a resistive layer as a research object of a zinc oxide resistive random access memory; constructing a ZnO single cell model by adopting a first principle calculation method based on a density functional theory; on the basis, expanding the ZnO single cell model towards the A direction, the B direction and the C direction to obtain a 3 * 2 * 2 ZnO super cell model and a 2 * 2 * 1 ZnO super cell model; constructing a vacancy defect state on the supercell model to obtain five zinc oxide resistive layer models; based on a first principle method, reducing the energy of five zinc oxide resistive layer model systems to the minimum, and enabling the structure to be optimal, so that the performance optimization of the zinc oxide resistive random access memory is realized. According to the invention, the energy state structure of the zinc oxide resistive random access memory is researched to determine the optimal vacancy concentration of the resistive random layer, so that the formation speed of the conductive filament can be effectively increased, and the storage performance of the resistive random access memory is improved.

Description

technical field [0001] The invention belongs to the technical field of performance research of a resistive variable memory, and relates to a method for optimizing the performance of a zinc oxide resistive variable memory based on different vacancy concentrations. Background technique [0002] The development of network, big data, and electronic information technology makes our life more convenient and faster, but this is accompanied by problems such as information explosion caused by the rapid growth of global data production, so the memory used for data storage has huge applications Prospects, but it also brings serious challenges to the memory field. Zinc oxide (ZnO) is known as the most potential resistive memory material, the formation and fracture of its conductive filaments control the writing and erasing of data. The formation of conductive filaments is accompanied by changes in crystal structure and atomic migration barrier. Under the action of the applied voltage,...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for optimizing the performance of ZnO RRAMs based on different vacancy concentrations, which solves the problem of a large number of intrinsic defects and unstable performance in existing ZnO RRAMs

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