Current detection device, semiconductor chip, battery management system and power equipment
By using MOS transistors and a calibration current generation circuit in the current detection device and adaptively adjusting the channel width-to-length ratio, the energy loss and insufficient precision problems in current detection are solved, and high-precision current detection is achieved.
Patent Information
- Application Number
- CN202110947958.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-08-18
- Publication Date
- 2025-09-09
- Estimated Expiration
- 2041-08-18
AI Technical Summary
The current detection method in the existing technology has problems such as energy loss, heat generation and insufficient detection accuracy. In addition, the current detection circuit structure cannot be adjusted according to the size of the charge and discharge current, which may cause the current detection circuit to be damaged or have poor accuracy.
By using charging MOS transistors and discharging MOS transistors, combined with a calibration current generation circuit and a sampling calibration controller, adaptive current detection is achieved by adjusting the current detection MOS transistors with channel width-to-length ratios of 1:M and 1:N, and calibration parameters are generated to optimize detection accuracy.
It achieves high-precision current detection under different charge and discharge current conditions, reduces energy consumption, avoids circuit damage, and improves detection accuracy and stability.
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Figure CN113675922B_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of current detection, and in particular to a current detection device, a semiconductor chip, a battery management system, and an electrical device. Background Art
[0002] In the prior art, a large number of electrical devices (electric vehicles, mobile phones, etc.) use battery packs (or battery cells, battery packs) to provide electrical energy. The discharge of the battery pack is required to provide electrical energy to the load, and an external charger is also required to charge the battery pack.
[0003] During the charging and discharging process of the battery pack, the charging current and discharging current need to be detected to avoid safety accidents.
[0004] In the prior art, current detection is usually performed by setting a detection resistor in the battery pack circuit. However, the setting of the detection resistor will inevitably lead to energy loss, heat generation, etc., resulting in many adverse consequences.
[0005] In addition, the magnitude of the charge and discharge current often changes, and the current detection circuit in the existing technology cannot adjust the current detection circuit structure according to the magnitude of the charge and discharge current. For example, a larger charge and discharge current may cause damage to the current detection circuit, and a smaller charge and discharge current may result in poor detection accuracy. Summary of the Invention
[0006] In order to solve at least one of the above technical problems, the present disclosure provides a current detection device, a semiconductor chip, a battery management system and an electric device.
[0007] The current detection device, semiconductor chip, battery management system and electrical equipment disclosed in the present invention are implemented through the following technical solutions.
[0008] According to one aspect of the present disclosure, there is provided a current detection device, comprising:
[0009] a charging MOS transistor, wherein a gate of the charging MOS transistor is used to receive a charging control signal to control charging of the battery device;
[0010] at least one charging current detection MOS transistor, the charging current detection MOS transistor detecting a charging current of the battery device, the drain of the charging current detection MOS transistor being connected to the drain of the charging MOS transistor, the gate of the charging current detection MOS transistor being configured to receive a charging detection control signal to detect the charging current, the ratio of a channel width-to-length ratio of the charging current detection MOS transistor to a channel width-to-length ratio of the charging MOS transistor being 1:M, where M is greater than 1;
[0011] a calibration current generating circuit, the calibration current generating circuit providing a calibration current to at least the charging MOS transistor; and
[0012] a sampling and calibration controller, wherein the sampling and calibration controller obtains an ideal charging current detection value of the charging current detection MOS transistor based on the calibration current and the ratio, and when the charging MOS transistor is provided with the calibration current, the sampling and calibration controller collects a test charging current detection value of the charging current detection MOS transistor, and generates a calibration parameter based on the ideal charging current detection value and the test charging current detection value.
[0013] According to at least one embodiment of the present disclosure, the current detection device further includes:
[0014] a discharge MOS transistor, wherein a gate of the discharge MOS transistor is used to receive a discharge control signal to control the discharge of the battery device;
[0015] At least one discharge current detection MOS transistor, the discharge current detection MOS transistor detecting the discharge current of the battery device, the drain of the discharge current detection MOS transistor being connected to the drain of the discharge MOS transistor, the gate of the discharge current detection MOS transistor being used to receive a discharge detection control signal to detect the discharge current, and the ratio of the channel width-to-length ratio of the discharge current detection MOS transistor to the channel width-to-length ratio of the discharge MOS transistor being 1:N, where N is greater than 1.
[0016] In the current detection device according to at least one embodiment of the present disclosure, the calibration current generating circuit provides a calibration current to at least the discharge MOS transistor, and the sampling calibration controller obtains an ideal discharge current detection value of the discharge current detection MOS transistor based on the calibration current and the ratio 1:N. When the discharge MOS transistor is provided with the calibration current, the sampling calibration controller collects a test discharge current detection value of the discharge current detection MOS transistor and generates a calibration parameter based on the ideal discharge current detection value and the test discharge current detection value.
[0017] According to the current detection device of at least one embodiment of the present disclosure, the calibration current generating circuit includes a reference voltage device and a reference resistor. The reference voltage device provides a reference voltage, and the reference voltage is applied to the reference resistor to generate the calibration current.
[0018] According to the current detection device of at least one embodiment of the present disclosure, the sampling calibration controller includes a control unit, which provides at least the charging control signal (GMB) to the gate of the charging MOS transistor, provides a charging detection control signal to the gate of the charging current detection MOS transistor, provides a discharge control signal (GMA) to the gate of the discharging MOS transistor, and provides a discharge detection control signal to the gate of the discharge current detection MOS transistor.
[0019] According to the current detection device of at least one embodiment of the present disclosure, the sampling calibration controller further includes a sampling measurement circuit, which collects the detection current detected by the charging current detection MOS transistor and / or collects the detection current detected by the discharging current detection MOS transistor.
[0020] According to the current detection device of at least one embodiment of the present disclosure, the sampling and measurement circuit includes a first switch unit, a first current mirror, a second switch unit, a second current mirror, and a current detection circuit. The second switch unit is turned on based on the detection current detected by the charging current detection MOS transistor, so that the detection current detected by the charging current detection MOS transistor is mirrored by the second current mirror and then detected by the current detection circuit; the first switch unit is turned on based on the detection current detected by the discharging current detection MOS transistor, so that the detection current detected by the discharging current detection MOS transistor is mirrored by the first current mirror and then detected by the current detection circuit.
[0021] According to the current detection device of at least one embodiment of the present disclosure, the current detection circuit includes a sensing resistor and a voltage detection unit. The current detection circuit obtains the detection current detected by the charging current detection MOS transistor based on the detection voltage detected by the voltage detection unit from the output end of the second current mirror and the resistance value of the sensing resistor.
[0022] According to the current detection device of at least one embodiment of the present disclosure, the current detection circuit obtains the detection current detected by the discharge current detection MOS transistor based on the detection voltage detected by the voltage detection unit from the output end of the first current mirror and the resistance value of the sensing resistor.
[0023] According to the current detection device of at least one embodiment of the present disclosure, the output end of the first current mirror is connected to the output end of the second current mirror.
[0024] According to the current detection device of at least one embodiment of the present disclosure, the sampling calibration controller further includes a calibration unit, which generates a calibration parameter based on the detection current detected by the charging current detection MOS transistor and the ideal charging current detection value collected by the sampling measurement circuit.
[0025] According to the current detection device of at least one embodiment of the present disclosure, the calibration unit generates a calibration parameter based on the detection current detected by the discharge current detection MOS transistor and collected by the sampling measurement circuit and the ideal discharge current detection value.
[0026] According to the current detection device of at least one embodiment of the present disclosure, the number of the charging current detection MOS transistors is n, where n is an integer greater than or equal to 1, and the ratio of the channel width-to-length ratio of the nth charging current detection MOS transistor to the channel width-to-length ratio of the charging MOS transistor is 1:M to the power of n-1.
[0027] According to the current detection device of at least one embodiment of the present disclosure, the number of the charging current detection MOS transistors is n, where n is an integer greater than or equal to 1, and the ratio of the channel width-to-length ratio of the nth charging current detection MOS transistor to the channel width-to-length ratio of the charging MOS transistor is 1:M to the power of n.
[0028] According to the current detection device of at least one embodiment of the present disclosure, the number of the discharge current detection MOS transistors is n, where n is an integer greater than or equal to 1, and the ratio of the channel width-to-length ratio of the nth discharge current detection MOS transistor to the channel width-to-length ratio of the discharge MOS transistor is 1:N to the power of n-1.
[0029] According to the current detection device of at least one embodiment of the present disclosure, the number of the discharge current detection MOS transistors is n, where n is an integer greater than or equal to 1, and the ratio of the channel width-to-length ratio of the nth discharge current detection MOS transistor to the channel width-to-length ratio of the discharge MOS transistor is 1:N to the power of n.
[0030] According to the current detection device of at least one embodiment of the present disclosure, the charging MOS transistor and the charging current detection MOS transistor are NMOS transistors or PMOS transistors, and the M value is 100.
[0031] According to the current detection device of at least one embodiment of the present disclosure, the discharge MOS transistor and the discharge current detection MOS transistor are NMOS transistors or PMOS transistors, and the N value is 100.
[0032] According to at least one embodiment of the present disclosure, the current detection device further includes a second gating device, which includes at least one gating switch. The number of gating switches of the second gating device is the same as the number of the charging current detection MOS transistors. Charging current detection is performed when the gating switches corresponding to the charging current detection MOS transistors are turned on.
[0033] According to at least one embodiment of the present disclosure, the current detection device further includes a first gating device, which includes at least one gating switch. The number of gating switches of the first gating device is the same as the number of the discharge current detection MOS transistors. Discharge current detection is performed when the gating switches corresponding to the discharge current detection MOS transistors are turned on.
[0034] According to at least one embodiment of the present disclosure, the current detection device is in the form of a semiconductor chip.
[0035] According to another aspect of the present disclosure, a semiconductor chip is provided, on which any of the above-mentioned current detection devices is formed.
[0036] According to another aspect of the present disclosure, there is provided a battery management system, comprising:
[0037] The current detection device described in any one of the above items controls the charging / discharging of the battery device and detects the charging current / discharging current of the battery device.
[0038] According to another aspect of the present disclosure, there is provided an electrical device, comprising:
[0039] A battery device; and the above-mentioned battery management system, wherein the battery management system at least controls the charge / discharge of the battery device and detects the charge current / discharge current of the battery device. BRIEF DESCRIPTION OF THE DRAWINGS
[0040] The accompanying drawings illustrate exemplary embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. These drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this specification.
[0041] Figure 1 1 is a schematic diagram of the circuit structure of a current detection device according to an embodiment of the present disclosure.
[0042] Figure 2 3 is a circuit structure diagram of a current detection device according to another embodiment of the present disclosure.
[0043] Figure 31 is a schematic diagram of the circuit structure of a sampling and calibration controller of a current detection device according to an embodiment of the present disclosure.
[0044] Figure 4 3 is a circuit structure diagram of a current detection device according to another embodiment of the present disclosure.
[0045] Figure 5 FIG. 1 is a schematic block diagram of a battery management system according to an embodiment of the present disclosure.
[0046] Figure 6 It is a schematic block diagram of the structure of an electric device according to one embodiment of the present disclosure. DETAILED DESCRIPTION
[0047] The present disclosure will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only intended to explain the relevant content and are not intended to limit the present disclosure. It should also be noted that, for ease of description, only the portions relevant to the present disclosure are shown in the accompanying drawings.
[0048] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in the present disclosure can be combined with each other. The technical solution of the present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0049] Unless otherwise stated, the exemplary embodiments / examples shown are to be understood as providing exemplary features of various details of some ways in which the technical concepts of the present disclosure can be implemented in practice. Therefore, unless otherwise stated, the features of the various embodiments / examples may be further combined, separated, interchanged, and / or rearranged without departing from the technical concepts of the present disclosure.
[0050] The use of cross hatching and / or shading in the accompanying drawings is generally used to make the boundaries between adjacent components clear. As such, unless otherwise indicated, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for the specific materials, material properties, dimensions, proportions, commonalities between the components shown, and / or any other characteristics, attributes, properties, etc. of the components. In addition, in the accompanying drawings, the sizes and relative sizes of the components may be exaggerated for clarity and / or descriptive purposes. When the exemplary embodiments can be implemented differently, the specific process sequence can be performed in a different order than described. For example, two successively described processes can be performed substantially simultaneously or in an order opposite to the order described. In addition, the same figure numbers represent the same components.
[0051] When a component is referred to as being “on,” “over,” “connected to,” or “coupled to” another component, the component may be directly on, directly connected to, or directly coupled to the other component, or intervening components may be present. However, when a component is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another component, there are no intervening components present. For this purpose, the term “connected” may refer to a physical connection, an electrical connection, etc., with or without intervening components.
[0052] For descriptive purposes, the present disclosure may use spatially relative terms such as "below," "beneath," "under," "down," "above," "upper," "above," "higher," and "side (e.g., in a "sidewall")," to describe the relationship of one component to another (other) component as shown in the accompanying drawings. The spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the accompanying drawings. For example, if the device in the drawings is turned over, a component described as "below" or "beneath" another component or feature would then be positioned "above" the other component or feature. Thus, the exemplary term "below" can encompass both the "above" and "below" orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and as such, the spatially relative descriptors used herein should be interpreted accordingly.
[0053] The terms used herein are for the purpose of describing specific embodiments and are not intended to be restrictive. As used herein, unless the context clearly indicates otherwise, the singular forms "one (kind, person)" and "said (the)" are also intended to include plural forms. In addition, when the terms "comprise" and / or "include" and their variations are used in this specification, the features, integral bodies, steps, operations, parts, assemblies and / or their groups stated are explained, but the presence or addition of one or more other features, integral bodies, steps, operations, parts, assemblies and / or their groups is not excluded. It should also be noted that, as used herein, the terms "substantially", "approximately" and other similar terms are used as approximate terms and not as degree terms, so that they are used to explain the inherent deviations of the measured values, calculated values and / or the values provided that will be recognized by those of ordinary skill in the art.
[0054] Combined with the following Figures 1 to 6 The current detection device, battery management system and electrical equipment disclosed in the present invention are described in detail.
[0055] First reference Figure 1 and Figure 2 , a current detection device according to an embodiment of the present disclosure includes:
[0056] a charging MOS transistor 120 , wherein a gate of the charging MOS transistor 120 is configured to receive a charging control signal (GMB) to control charging of the battery device 20 ;
[0057] at least one charging current detection MOS transistor 121 (CHG), the charging current detection MOS transistor 121 detecting the charging current of the battery device 20, the drain of the charging current detection MOS transistor 121 being connected to the drain of the charging MOS transistor 120, the gate of the charging current detection MOS transistor 121 being configured to receive a charging detection control signal to detect the charging current, and the ratio of the channel width-to-length ratio of the charging current detection MOS transistor 121 to the channel width-to-length ratio of the charging MOS transistor 120 being 1:M, where M is greater than 1;
[0058] a calibration current generating circuit, the calibration current generating circuit providing a calibration current (Itest) to at least the charging MOS transistor 120; and
[0059] The sampling and calibration controller 30 obtains an ideal charging current detection value of the charging current detection MOS transistor 121 based on the calibration current and the ratio. When the calibration current (Itest) is provided to the charging MOS transistor 120, the sampling and calibration controller 30 collects a test charging current detection value of the charging current detection MOS transistor 121 and generates a calibration parameter based on the ideal charging current detection value and the test charging current detection value.
[0060] The calibration parameter is preferably a ratio parameter, that is, the ratio P of the ideal charging current detection value to the test charging current detection value is used as the calibration parameter associated with the M value in the above ratio. For example, if the M value is 100, that is, the ratio of the channel width-to-length ratio of the charging current detection MOS transistor 121 to the channel width-to-length ratio of the charging MOS transistor 120 is 1:100, the calibration current can be set to 1A. In this case, the ideal charging current detection value of the charging current detection MOS transistor 121 is 0.01A. However, due to the non-idealities of the integrated circuit manufacturing process, although the ratio of the channel width-to-length ratio of the charging current detection MOS transistor to the channel width-to-length ratio of the charging MOS transistor is designed to be 1:M during circuit design, the ratio of the detection current of the charging current detection MOS transistor to the charging current of the charging MOS transistor cannot accurately follow 1:M during actual measurement. The technical solution of the present disclosure generates calibration parameters based on the difference between the ideal charging current detection value and the test charging current detection value (i.e., the measured charging current detection value) through the sampling calibration controller 30, thereby enabling the current detection device of the present disclosure to output a nearly ideal charging current detection value. The M value can be 100, 1000, 10000, etc.
[0061] Based on the current detection device of the above embodiment, preferably, the current detection device further includes:
[0062] a discharge MOS transistor 110 , wherein a gate of the discharge MOS transistor 110 is used to receive a discharge control signal (GMA) to control the discharge of the battery device 20 ;
[0063] At least one discharge current detection MOS transistor 111 (DSG) is provided. The discharge current detection MOS transistor 111 detects the discharge current of the battery device 20. The drain of the discharge current detection MOS transistor 111 is connected to the drain of the discharge MOS transistor 120. The gate of the discharge current detection MOS transistor 111 is used to receive a discharge detection control signal to detect the discharge current. The ratio of the channel width-to-length ratio of the discharge current detection MOS transistor 111 to the channel width-to-length ratio of the discharge MOS transistor 110 is 1:N, where N is greater than 1.
[0064] Figure 1 , a charging current detection MOS transistor 121 and a discharging current detection MOS transistor 111 are shown. According to a preferred embodiment of the present disclosure, the channel width-to-length ratio of the charging current detection MOS transistor 121 is different from the channel width-to-length ratio of the charging MOS transistor 120, and the channel width-to-length ratio of the charging current detection MOS transistor 121 is smaller than the channel width-to-length ratio of the charging MOS transistor 120. The channel width-to-length ratio of the discharging current detection MOS transistor 111 is different from the channel width-to-length ratio of the discharging MOS transistor 110, and the channel width-to-length ratio of the discharging current detection MOS transistor 111 is smaller than the channel width-to-length ratio of the discharging MOS transistor 110.
[0065] Figure 2 , n charging current detection MOS transistors and n discharging current detection MOS transistors are shown, where n is an integer greater than or equal to 1.
[0066] Those skilled in the art will understand that the larger the channel width-to-length ratio of a MOS transistor, the smaller its on-resistance, and thus the greater the current flowing through it. In the present disclosure, by using charging and discharging MOS transistors with large width-to-length ratios, their on-resistance will be very small, so that the energy consumed in the charge and discharge circuit will be very small. When it is necessary to detect the current, a detection MOS transistor with a relatively small channel width-to-length ratio is used, so that its on-resistance is large, and therefore the current flowing through it is small, which facilitates detection without the need for subsequent acquisition units and other requirements for high current resistance. At the same time, since the detection MOS transistor is in the detection branch, it will not affect the normal charge and discharge circuit, such as consuming the battery's electrical energy.
[0067] In the case of including multiple charge detection MOS transistors, the external circuit of the device can switch which charge detection MOS transistor to use for detection according to the magnitude of the detected charging current. For example, the detection current is obtained through transistor 121. When the detection current is too large, it can be switched to transistor 122 to obtain the detection current. When the detection current is even larger, it can also be switched to other transistors. When the detected charging current is too small, the reverse sequence can also be switched. In addition, the charge detection MOS transistor used to detect the charging current can be selected based on the specific value of the detected charging current.
[0068] In the case of including multiple discharge detection MOS transistors, the device's external circuitry can switch which discharge detection MOS transistor to use for detection based on the magnitude of the detected discharge current. For example, if the detection current is obtained through transistor 111, when the detection current is too large, the detection current can be switched to transistor 112. If the detection current is even larger, the detection current can be switched to another transistor. If the detected discharge current is too small, the switching sequence can also be reversed. In addition, the discharge detection MOS transistor used for discharge current detection can be selected based on the specific value of the detected discharge current.
[0069] That is, the current detection device of the present invention can adaptively select a transistor with a suitable channel width-to-length ratio among n charging current detection MOS transistors and n discharging current detection MOS transistors for charging / discharging current detection based on the size of the charging / discharging current. For example, when a certain charging current detection MOS transistor is used for charging current detection, if the detection current is large or oversaturated, it can be switched to other charging current detection MOS transistors to output a detection current of a suitable size. If the detection current is too small, it can be switched to other charging current detection MOS transistors to output a detection current of a suitable size, thereby realizing automatic gain control of the current detection device of the present invention.
[0070] For the current detection devices of each of the above-mentioned embodiments, preferably, the calibration current generating circuit provides a calibration current (Itest) to at least the discharge MOS transistor 110, and the sampling calibration controller 30 obtains an ideal discharge current detection value of the discharge current detection MOS transistor 111 based on the calibration current and the ratio 1:N. When the calibration current (Itest) is provided to the discharge MOS transistor 110, the sampling calibration controller 30 collects a test discharge current detection value of the discharge current detection MOS transistor 111 and generates a calibration parameter based on the ideal discharge current detection value and the test discharge current detection value.
[0071] According to the current detection device of the preferred embodiment of the present disclosure, refer to Figure 1 and Figure 2The calibration current generating circuit includes a reference voltage device 140 and a reference resistor 130 . The reference voltage device 140 provides a reference voltage, and the reference voltage is applied to the reference resistor 130 to generate the calibration current (Itest).
[0072] According to a preferred embodiment of the present disclosure, the reference resistor 130 is a reference resistor external to the reference voltage device 140 . According to another embodiment of the present disclosure, the reference resistor 130 is a reference resistor built into the reference voltage device 140 .
[0073] The reference resistor is preferably a precision resistor device having an accurate resistance value, and its resistance value is preferably not affected by factors such as temperature.
[0074] The reference voltage device 140 may be a low dropout regulator (LDO).
[0075] For the current detection device in each of the above embodiments, preferably, reference is made to Figure 2 and Figure 3 The sampling and calibration controller 30 includes a control unit 320, which provides at least a charging control signal (GMB) to the gate of the charging MOS transistor 120, a charging detection control signal to the gate of the charging current detection MOS transistor 121, a discharge control signal (GMA) to the gate of the discharging MOS transistor 110, and a discharge detection control signal to the gate of the discharge current detection MOS transistor 111.
[0076] Among them, the charging control signal, the discharging control signal, the charging detection control signal and the discharging detection control signal can all be in the form of voltage signals, that is, the control unit 320 can be a device that outputs a voltage control signal, such as a logic control chip or a part of a logic control chip. The generation and output of the control signal belong to the existing technology, and the present disclosure does not intend to specifically limit the structure of the control unit 320.
[0077] According to the current detection device of the preferred embodiment of the present disclosure, refer to Figure 2 and Figure 3 The sampling and calibration controller 30 further includes a sampling and measuring circuit 310. The sampling and measuring circuit 310 detects the detection current (I SC ) is collected and / or the detection current (I SD ) for collection.
[0078] For the current detection device in each of the above embodiments, preferably, reference is made to Figure 4The sampling and measuring circuit 310 includes a first switch unit 311, a first current mirror 313, a second switch unit 312, a second current mirror 314 and a current detection circuit 315. The second switch unit 312 detects the detection current (I SC ) is turned on to detect the detection current (I SC ) is mirrored by the second current mirror 314 and then detected by the current detection circuit 315; the first switch unit 311 detects the detection current (I SD ) is turned on to detect the discharge current detection MOS transistor 111. SD ) is mirrored by the first current mirror 313 and then detected by the current detection circuit 315.
[0079] Preferably, reference Figure 4 The current detection circuit 315 includes a sensing resistor Rsense and a voltage detection unit ADC. The current detection circuit 315 obtains the detection current (I SC ).
[0080] Preferably, reference Figure 4 The current detection circuit 315 obtains the detection current (I SD ).
[0081] like Figure 4 As shown, more preferably, the output end of the first current mirror is connected to the output end of the second current mirror.
[0082] The present disclosure implements automatic control of current collection based on discharge detection current and charge detection current by designing the circuit structure of the sampling measurement circuit 310 .
[0083] For the current detection devices of the above-mentioned various embodiments, preferably, the sampling and calibration controller 30 further includes a calibration unit 330, which is based on the detection current (I SC ) and the ideal charging current detection value (associated with M or N described above) generate calibration parameters.
[0084] Furthermore, the calibration unit 330 detects the detection current (ISD ) and the ideal discharge current detection value (associated with M or N described above) generate calibration parameters.
[0085] Among them, the calibration unit 330 can be a logic processing chip or a part of a logic processing chip. A division circuit can be formed on a substrate through a chip manufacturing process to obtain a calibration parameter through the ratio P of the ideal charge / discharge current detection value to the test charge / discharge current detection value.
[0086] Those skilled in the art can adjust the circuit form of the calibration unit 330 based on a full understanding of the technical solution of the present disclosure. How to obtain the current ratio belongs to the existing technology, and the present disclosure does not intend to specifically limit the circuit structure of the calibration unit 330.
[0087] For the current detection devices of the above-mentioned embodiments, preferably, the number of charging current detection MOS transistors is n, where n is an integer greater than or equal to 1, and the ratio of the channel width-to-length ratio of the nth charging current detection MOS transistor to the channel width-to-length ratio of the charging MOS transistor is 1:M to the power of n-1.
[0088] For the current detection devices of the above-mentioned embodiments, preferably, the number of charging current detection MOS transistors is n, where n is an integer greater than or equal to 1, and the ratio of the channel width-to-length ratio of the nth charging current detection MOS transistor to the channel width-to-length ratio of the charging MOS transistor is 1:M to the power of n.
[0089] For the current detection devices of the above-mentioned embodiments, preferably, the number of discharge current detection MOS transistors is n, where n is an integer greater than or equal to 1, and the ratio of the channel width-to-length ratio of the nth discharge current detection MOS transistor to the channel width-to-length ratio of the discharge MOS transistor is 1:N to the power of n-1.
[0090] For the current detection devices of the above-mentioned embodiments, preferably, the number of discharge current detection MOS transistors is n, where n is an integer greater than or equal to 1, and the ratio of the channel width-to-length ratio of the nth discharge current detection MOS transistor to the channel width-to-length ratio of the discharge MOS transistor is 1:N to the power of n.
[0091] In the current detection device of each of the above embodiments, the charging MOS transistor and the charging current detection MOS transistor are NMOS transistors or PMOS transistors, and the M value is preferably 100.
[0092] In the current detection device of each of the above embodiments, the discharge MOS transistor and the discharge current detection MOS transistor are NMOS transistors or PMOS transistors, and the N value is 100.
[0093] For the current detection device in each of the above embodiments, refer to Figure 4 , preferably also includes a second gating device 170, the second gating device 170 includes at least one gating switch, the number of gating switches of the second gating device 170 is the same as the number of charging current detection MOS transistors, and charging current detection is performed when the gating switch corresponding to the charging current detection MOS transistor is turned on.
[0094] Furthermore, it also includes a first gating device 160, which includes at least one gating switch. The number of gating switches in the first gating device 160 is the same as the number of discharge current detection MOS transistors. When the gating switch corresponding to the discharge current detection MOS transistor is turned on, discharge current detection is performed.
[0095] According to a battery management system of one embodiment of the present disclosure, referring to Figure 5 ,include:
[0096] In any of the above-mentioned embodiments, the current detection device controls the charge / discharge of the battery device 20 and detects the charge current / discharge current of the battery device 20 .
[0097] The current detection device may be connected in series between the battery device 20 and the charger / load to control charging and discharging, and may also detect the charging current and the discharging current.
[0098] The present disclosure also provides an electrical device, such as an electric tool, a portable terminal, an electric car, etc. Figure 6 As shown, the electrical equipment may include the above-mentioned battery device and the above-mentioned battery management system, and the battery management system at least controls the charging / discharging of the battery device and detects the charging current / discharging current of the battery device.
[0099] In the description of this specification, the description with reference to the terms "one embodiment / method", "some embodiments / methods", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment / method or example are included in at least one embodiment / method or example of the present disclosure. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment / method or example. Moreover, the specific features, structures, materials or characteristics described may be combined in an appropriate manner in any one or more embodiments / methods or examples. In addition, those skilled in the art may combine and combine different embodiments / methods or examples described in this specification and the features of different embodiments / methods or examples, unless they are contradictory.
[0100] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. Throughout the present disclosure, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.
[0101] Those skilled in the art will appreciate that the above embodiments are merely intended to clearly illustrate the present disclosure and are not intended to limit the scope of the present disclosure. Other changes or modifications may be made based on the above disclosure, and such changes or modifications are still within the scope of the present disclosure.
Claims
1. A current detection device, characterized in that: include: a charging MOS transistor, wherein a gate of the charging MOS transistor is used to receive a charging control signal to control charging of the battery device; at least one charging current detection MOS transistor, the charging current detection MOS transistor detecting a charging current of the battery device, the drain of the charging current detection MOS transistor being connected to the drain of the charging MOS transistor, the gate of the charging current detection MOS transistor being configured to receive a charging detection control signal to detect the charging current, the ratio of a channel width-to-length ratio of the charging current detection MOS transistor to a channel width-to-length ratio of the charging MOS transistor being 1:M, where M is greater than 1; a calibration current generating circuit, the calibration current generating circuit providing a calibration current to at least the charging MOS transistor, the calibration current generating circuit comprising a reference voltage device and a reference resistor, the reference voltage device providing a reference voltage, the reference voltage being applied to the reference resistor to generate the calibration current; as well as a sampling and calibration controller, wherein the sampling and calibration controller obtains an ideal charging current detection value of the charging current detection MOS transistor based on the calibration current and the ratio 1:M, and when the calibration current is provided to the charging MOS transistor, the sampling and calibration controller collects a test charging current detection value of the charging current detection MOS transistor, and generates a calibration parameter based on the ideal charging current detection value and the test charging current detection value, wherein the calibration parameter is the ratio of the ideal charging current detection value to the test charging current detection value; The sampling and calibration controller includes a sampling and measurement circuit, which collects the detection current detected by the charging current detection MOS transistor.
2. The current detection device according to claim 1, characterized in that Also includes: a discharge MOS transistor, wherein a gate of the discharge MOS transistor is used to receive a discharge control signal to control the discharge of the battery device; At least one discharge current detection MOS transistor, the discharge current detection MOS transistor detecting the discharge current of the battery device, the drain of the discharge current detection MOS transistor being connected to the drain of the discharge MOS transistor, the gate of the discharge current detection MOS transistor being used to receive a discharge detection control signal to detect the discharge current, and the ratio of the channel width-to-length ratio of the discharge current detection MOS transistor to the channel width-to-length ratio of the discharge MOS transistor being 1:N, where N is greater than 1.
3. The current detection device according to claim 2, characterized in that: The calibration current generating circuit provides a calibration current to at least the discharge MOS transistor. The sampling calibration controller obtains an ideal discharge current detection value of the discharge current detection MOS transistor based on the calibration current and a ratio of 1:N. When the discharge MOS transistor is provided with the calibration current, the sampling calibration controller collects a test discharge current detection value of the discharge current detection MOS transistor and generates a calibration parameter based on the ideal discharge current detection value and the test discharge current detection value.
4. The current detection device according to claim 2, characterized in that: The sampling and calibration controller includes a control unit, which provides at least the charging control signal to the gate of the charging MOS transistor, provides a charging detection control signal to the gate of the charging current detection MOS transistor, provides a discharge control signal to the gate of the discharging MOS transistor, and provides a discharge detection control signal to the gate of the discharge current detection MOS transistor.
5. The current detection device according to claim 4, characterized in that: The sampling and measuring circuit collects the detection current detected by the discharge current detection MOS transistor.
6. The current detection device according to claim 5, characterized in that: The sampling and measuring circuit includes a first switch unit, a first current mirror, a second switch unit, a second current mirror, and a current detection circuit, wherein the second switch unit is turned on based on the detection current detected by the charging current detection MOS transistor, so that the detection current detected by the charging current detection MOS transistor is mirrored by the second current mirror so as to be detected by the current detection circuit; The first switch unit is turned on based on the detection current detected by the discharge current detection MOS transistor so that the detection current detected by the discharge current detection MOS transistor is mirrored by the first current mirror and then detected by the current detection circuit.
7. A semiconductor chip, characterized in that: A current detection device according to any one of claims 1 to 6 is provided.
8. A battery management system, characterized in that: include: The current detection device according to any one of claims 1 to 6, wherein the current detection device controls the charge / discharge of the battery device and detects the charge current / discharge current of the battery device.
9. An electrical device, characterized in that: include: Battery device; as well as The battery management system according to claim 8, wherein the battery management system at least controls the charge / discharge of the battery device and detects the charge current / discharge current of the battery device.
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