Substrate processing equipment

Abstract

A substrate processing device capable of locally controlling plasma intensity and improving thin film characteristics and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate supporting unit below the processing unit, wherein the substrate supporting unit includes a first ground electrode and a second ground electrode.

Description

Technical Field

[0001] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus configured to process a substrate by supplying plasma power through a processing unit disposed on the substrate. Background Art

[0002] Substrate processing equipment includes a heating block for heating a substrate to perform processing on the substrate. The substrate support unit including the heating block can also serve as an electrode during plasma processing. For example, in an in-situ plasma process, the heating block and showerhead facing each other in the reaction space function as the lower electrode and upper electrode, respectively.

[0003] As the size of a substrate to be processed increases, local variations in plasma density occur. As a result, thin film properties and thickness uniformity may deteriorate at the center and edge of the substrate. Japanese Patent Publication No. 2004-363552 also mentions the issue of deteriorated plasma uniformity. More specifically, according to paragraph

[0004] , one or more embodiments include a substrate processing apparatus capable of reducing plasma non-uniformity across a substrate. Summary of the Invention

[0004] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0005] According to one or more embodiments, a substrate processing apparatus includes a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate supporting unit below the processing unit, wherein the substrate supporting unit includes a first ground electrode and a second ground electrode.

[0006] According to one embodiment of the substrate processing apparatus, the processing unit may be configured as an electrode for supplying power to the reaction space.

[0007] According to another embodiment of the substrate processing apparatus, the second ground electrode may be spaced apart from the first ground electrode and arranged to surround the first ground electrode.

[0008] According to another embodiment of the substrate processing apparatus, the first ground electrode and the second ground electrode may be electrically connected to ground, and the substrate processing apparatus may include at least one of: a first plasma intensity controller connected between the first ground electrode and the ground, and a second plasma intensity controller connected between the second ground electrode and the ground.

[0009] According to another embodiment of the substrate processing apparatus, at least one of the first plasma intensity controller and the second plasma intensity controller may include an LC circuit including an inductor, a capacitor, and a variable capacitor.

[0010] According to another embodiment of the substrate processing apparatus, at least one of the first ground electrode and the second ground electrode may include a plate-shaped ground electrode.

[0011] According to another embodiment of the substrate processing apparatus, at least one of the first ground electrode and the second ground electrode may include a mesh ground electrode.

[0012] According to another embodiment of the substrate processing apparatus, the mesh ground electrode includes a first ground line extending in a first direction and a second ground line extending in a second direction different from the first direction, wherein the first and second ground lines may be electrically connected to each other.

[0013] According to another embodiment of the substrate processing apparatus, the first and second ground lines contact each other at portions where the first and second ground lines intersect each other, and the first and second ground lines may be electrically connected to each other at the contact therebetween.

[0014] According to another embodiment of the substrate processing equipment, the first ground wire and the second ground wire are spaced apart from each other at a portion where the first ground wire and the second ground wire intersect each other, and the first ground wire and the second ground wire can be electrically connected to each other by a conductive member connected between an end portion of the first ground wire and an end portion of the second ground wire.

[0015] According to another embodiment of the substrate processing device, in multiple first parts where the first ground line and the second ground line intersect each other, the distance between the upper surface of the substrate supporting unit and the first ground line is greater than the distance between the upper surface of the substrate supporting unit and the second ground line, and in the second part other than the first part, the distance between the upper surface of the substrate supporting unit and the first ground line can be equal to the distance between the upper surface of the substrate supporting unit and the second ground line.

[0016] According to another embodiment of the substrate processing apparatus, the first ground electrode may include a first meshed ground electrode, and the second ground electrode may include a second meshed ground electrode, wherein the first meshed ground electrode and the second meshed ground electrode may have different mesh densities.

[0017] According to another embodiment of the substrate processing apparatus, the first ground electrode may be arranged at a different level than the second ground electrode.

[0018] According to another embodiment of the substrate processing apparatus, the first ground electrode and the second ground electrode may partially overlap.

[0019] According to another embodiment of the substrate processing apparatus, the substrate processing apparatus may further include a first electrode rod in contact with the first ground electrode, and a first connecting rod electrically connecting the first electrode rod to ground.

[0020] According to another embodiment of the substrate processing apparatus, the substrate processing apparatus may further include a first buffer rod between the first electrode rod and the first connecting rod.

[0021] According to another embodiment of the substrate processing apparatus, the first electrode rod may include a first metal composition, and the first connecting rod may include a second metal composition different from the first metal composition, wherein the first buffer rod may include an alloy composition of the first and second metal compositions.

[0022] According to another embodiment of the substrate processing apparatus, the substrate supporting unit may include a first heating unit under the first ground electrode and a second heating unit under the second ground electrode, wherein the first heating unit and the second heating unit may be independently controlled.

[0023] According to one or more embodiments, a substrate processing apparatus includes a power supply unit, a showerhead electrode electrically connected to the power supply unit, and a heating block below the showerhead electrode, wherein the heating block includes a disk-shaped first ground electrode and an annular second ground electrode, the annular second ground electrode being spaced apart from and surrounding the disk-shaped first ground electrode, at least one of the disk-shaped first ground electrode and the annular second ground electrode being connected to an LC circuit including an inductor, a capacitor, and a variable capacitor, the LC circuit being connected to ground, and at least one of the density and intensity of the plasma in the reaction space can be adjusted by controlling parameters of the LC circuit.

[0024] According to one or more embodiments, a substrate processing apparatus includes a first ground electrode connected to a ground, and a second ground electrode spaced apart from the first ground electrode and connected to the ground. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0026] Figure 1 is a view of a substrate processing apparatus according to an embodiment of the inventive concept;

[0027] Figure 2 and Figure 3 A view of a mesh grounding electrode according to the inventive concept;

[0028] Figure 4A and 4B is a view of a substrate processing apparatus according to an embodiment of the inventive concept;

[0029] Figure 5 is a view of an RF ground electrode in a heating block according to an embodiment of the inventive concept;

[0030] Figure 6 is a view showing a case where the distance between the RF ground electrode and the surface of the heating block is different for each position according to an embodiment of the inventive concept;

[0031] Figure 7 is a view showing the arrangement of an RF ground line according to an embodiment of the inventive concept;

[0032] Figure 8 is a view showing a substrate processing apparatus according to the inventive concept;

[0033] Figure 9 is a cross-sectional view of a heating block according to an embodiment of the inventive concept;

[0034] Figure 10 is a view of a connection structure between an RF ground electrode and an RF electrode rod according to an embodiment of the inventive concept;

[0035] Figure 11 is a diagram of an arrangement of an RF ground electrode and a heating element such as a heating wire according to an embodiment of the inventive concept; and

[0036] Figure 12 is a view of plasma intensity distribution in a reactor equipped with a heating block according to an embodiment of the inventive concept. DETAILED DESCRIPTION

[0037] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always represent the same elements. In this regard, the present embodiment may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments will be described below only by reference to the accompanying drawings to explain various aspects of this specification. As used herein, the term "and / or" includes any and all combinations of one or more associated listed items. Before a list of elements, expressions such as "at least one of..." modify the entire list of elements without modifying the individual elements in the list.

[0038] In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Rather, these embodiments are provided to make this disclosure more thorough and complete and to fully convey the scope of this disclosure to those skilled in the art.

[0039] The terms used herein are for the purpose of describing specific embodiments and are not intended to limit the present disclosure. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an", and "said" are also intended to include the plural forms. It will also be understood that the terms "include" and / or "comprise" as used herein specify the presence of stated features, integers, steps, operations, components, parts, and / or groups, but do not exclude the presence or addition of one or more other features, integers, steps, operations, components, parts, and / or groups. As used herein, the term "and / or" includes any and all combinations of one or more associated listed items.

[0040] It will be understood that although the terms "first," "second," etc. may be used herein to describe various components, parts, regions, layers, and / or portions, these components, parts, regions, layers, and / or portions should not be limited by these terms. These terms do not indicate any order, quantity, or importance, but are merely used to distinguish one component, region, layer, and / or portion from another component, region, layer, and / or portion. Thus, a first component, component, region, layer, or portion discussed below may be referred to as a second component, component, region, layer, or portion without departing from the teachings of the embodiments.

[0041] Embodiments of the present disclosure will be described below with reference to the accompanying drawings, in which embodiments of the present disclosure are schematically shown. In the drawings, variations in the illustrated shapes are to be expected due to, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments of the present disclosure should not be construed as limited to the specific shapes of the regions shown herein, but may include deviations in shapes resulting from, for example, the manufacturing process.

[0042] Figure 1 is a view of a substrate processing apparatus according to an embodiment of the inventive concept.

[0043] refer to Figure 1 , the substrate processing apparatus may include a power supply unit PWR, a processing unit 110 and a substrate supporting unit 150 .

[0044] The power supply unit PWR can generate power. The power can be, for example, electrical energy used to generate plasma. In another example, the power can be the plasma itself. The generated power can be transmitted to the processing unit 110. For example, the power supply unit PWR can be electrically connected to the processing unit 110 via an RF rod, so that the power generated by the power supply unit (e.g., RF power) can be transmitted to the processing unit 110 via the RF rod.

[0045] The processing unit 110 may be located on a substrate support unit 150 configured to support a substrate. A reaction space 51 may be defined between the substrate support unit 150 and the processing unit 110. The processing unit 110 may be a conductor and may be used as an electrode for generating plasma. In other words, the processing unit 110 may serve as an electrode for generating plasma. Plasma may be generated in the reaction space 51 by the processing unit 110 being electrically connected to the power supply unit PWR. In other words, the processing unit 110 may serve as a plasma electrode for supplying power to the reaction space 51.

[0046] The processing unit 110 may include components that perform appropriate functions depending on the function of the substrate processing apparatus. For example, when the substrate processing apparatus performs a deposition function, the processing unit 110 may include a reactant supplier (e.g., a showerhead assembly). In another embodiment, when the reactor performs a polishing function, the processing unit 110 may include a polishing pad. In some embodiments, when the processing unit 110 itself acts as a showerhead assembly and also functions as an electrode, the processing unit 110 may be referred to as a showerhead electrode.

[0047] The substrate support unit 150 can be configured to provide an area on which a substrate S to be processed (e.g., a semiconductor substrate or a display substrate) is seated. The substrate support unit 150 can be below the processing unit 110. The substrate support unit 150 can be supported by a support member (not shown) that can rotate up and down. In addition, the substrate support unit 150 can include a conductor, and the substrate support unit 150 can serve as an electrode for generating plasma using the conductor (i.e., an opposite electrode to the gas supply electrode).

[0048] The substrate supporting unit 150 may include a first ground electrode GE1, a second ground electrode GE2, a first heating unit HU1, a second heating unit HU2, a first plasma intensity controller PC1, and a second plasma intensity controller PC2. This structure including the ground electrodes and the heating units may be referred to herein as a heating block.

[0049] The first ground electrode GE1 and the second ground electrode GE2 may be spaced apart from each other. For example, the first ground electrode GE1 may be at the center of the substrate support unit 150, and the second ground electrode GE2 may be arranged to surround the first ground electrode GE1. In an example, the first ground electrode GE1 may be in the form of a disk (e.g., a circular or square disk), and the second ground electrode GE2 may be in the form of a ring (e.g., a circular ring or a square ring) surrounding the first ground electrode GE1.

[0050] In some embodiments, the substrate supporting unit 150 may include three or more ground electrodes. For example, the three or more ground electrodes may include a central electrode disposed in the center, a first ring electrode surrounding the central electrode, and a second ring electrode surrounding the first ring electrode.

[0051] The first ground electrode GE1 and the second ground electrode GE2 can each be selectively electrically connected to the ground GND. That is, the ground electrodes GE1 and GE2 in the substrate support unit 150 are not connected to the power supply unit PWR that supplies power, but are connected to the ground GND. Therefore, the path through which the power (e.g., RF power) supplied by the processing unit 110 moves to the ground GND may include a first path passing through the first ground electrode GE1 and a second path passing through the second ground electrode GE2.

[0052] At least one of the first channel and the second channel may include a rod. For example, when the first channel includes a rod, the first channel may include a single rod. In some embodiments, the first channel may include multiple rods. The second channel may include a rod, and in some examples, the first channel and the second channel may include separate rods.

[0053] When the first channel includes multiple rods, the first channel may include a first electrode rod and a first connecting rod. The first electrode rod may contact the first ground electrode GE1. The first connecting rod may electrically connect the first electrode rod to the ground GND. In some embodiments, a first buffer rod may be arranged between the first electrode rod and the first connecting rod.

[0054] In another embodiment, the first buffer rod may include an alloy composition of the first electrode rod and the first connecting rod. For example, when the first electrode rod includes molybdenum (Mo) and the first connecting rod includes nickel (Ni), the first buffer rod may include a Mo-Ni alloy.

[0055] A first plasma intensity controller PC1 may be connected between the first ground electrode GE1 and the ground GND. Thus, the first plasma intensity controller PC1 may control the power flowing through the first path to the ground GND. A second plasma intensity controller PC2 may be connected between the second ground electrode GE2 and the ground GND. Thus, the second plasma intensity controller PC2 may control the power flowing through the second path to the ground GND.

[0056] In some embodiments, the plasma intensity controllers (e.g., first plasma intensity controller PC1 and / or second plasma intensity controller PC2) may include an LC circuit comprising an inductor, a capacitor, and a variable capacitor. In some embodiments, the LC circuit may be included only in first plasma intensity controller PC1, while in other embodiments, the LC circuit may be included only in second plasma intensity controller PC2. In another embodiment, the LC circuit may be included in both first plasma intensity controller PC1 and second plasma intensity controller PC2.

[0057] The first plasma intensity controller PC1 and the second plasma intensity controller PC2 may have different parameters. By controlling these parameters, the density and intensity of the plasma in the reaction space may be adjusted. In another example, the plasma intensity controller may include a circuit configuration other than an LC circuit (e.g., a bandpass filter).

[0058] In some embodiments, the first ground electrode GE1 and the second ground electrode GE2 (or any one of them) may include plate-shaped ground electrodes. For example, the first ground electrode GE1 may include a circular plate or a square plate, and the second ground electrode GE2 may be a circular disk or a square disk surrounding the first ground electrode GE1.

[0059] In some other embodiments, the first ground electrode GE1 and the second ground electrode GE2 (or either one thereof) may comprise mesh ground electrodes. For example, the first ground electrode GE1 may be a disc-shaped mesh ground electrode having multiple conductor lines intersecting therein, and the second ground electrode GE2 may be a ring-shaped mesh ground electrode i having multiple conductor lines intersecting therein. In an example where the first ground electrode GE1 comprises a first mesh ground electrode and the second ground electrode GE2 comprises a second mesh ground electrode, the first mesh ground electrode and the second mesh ground electrode may have different mesh densities. Due to this difference in mesh density, the plasma density or intensity on the substrate can be adjusted.

[0060] In some embodiments of the mesh ground electrode, reference Figure 2 and Figure 3 The mesh ground electrode may include a first ground line C1 extending in a first direction and a second ground line C2 extending in a second direction different from the first direction. Furthermore, the first ground line C1 and the second ground line C2 may be electrically connected to each other. The first ground line C1 and the second ground line C2 may be arranged to be inserted into the substrate support unit 150.

[0061] In some examples, reference Figure 2 The first ground line C1 and the second ground line C2 may contact each other at a portion P where the first ground line C1 and the second ground line C2 intersect. A mesh ground electrode in which the first ground line C1 and the second ground line C2 are electrically connected may be implemented by the contact at the intersection.

[0062] In another example, reference Figure 3, the first ground line C1 and the second ground line C2 can be spaced apart from each other at the portion P' where the first ground line C1 and the second ground line C2 intersect. In this case, the first ground line C1 and the second ground line C2 can touch each other at the edge. For example, the conductive member C3 can connect the end of the first ground line C1 to the end of the second ground line C2. The mesh ground electrode in which the first ground line C1 and the second ground line C2 are electrically connected can be realized by the contact at the edge.

[0063] like Figure 2 and Figure 3 As shown, in a plurality of first portions where the first grounding line C1 and the second grounding line C2 intersect, a distance F1 between the upper surface of the substrate supporting unit 150 and the first grounding line C1 may be greater than a distance F2 between the upper surface of the substrate supporting unit 150 and the second grounding line C2. On the other hand, in a second portion other than the first portion, a distance F2′ between the upper surface of the substrate supporting unit 150 and the first grounding line C1 may be greater than a distance F2″ between the upper surface of the substrate supporting unit 150 and the second grounding line C2. Figure 2 ), in this second portion, the first ground line C1 and the second ground line C2 do not intersect. Therefore, in the central area of ​​the mesh ground electrode, the distance between the upper surface of the substrate support unit 150 and the ground wires (i.e., the first ground line C1 and the second ground line C2) can be kept constant.

[0064] although Figure 1 The first ground electrode GE1 and the second ground electrode GE2 are shown to be arranged at the same height, but the first ground electrode GE1 may be arranged at a different level from the second ground electrode GE2. In other words, the distance between the upper surface of the substrate supporting unit 150 and the first ground electrode GE1 may be different from the distance between the upper surface of the substrate supporting unit 150 and the second ground electrode GE2.

[0065] Due to the level difference between the first ground electrode GE1 and the second ground electrode GE2, the density or intensity of the plasma can be adjusted for each position of the reaction space. For example, when the first ground electrode GE1 at the center of the reaction space is arranged at a higher level than the second ground electrode GE2 at the edge of the reaction space, plasma with greater intensity can be applied to the center or edge of the reaction space.

[0066] When the first ground electrode GE1 is arranged at a different height from the second ground electrode GE2, the distance between the first ground electrode GE1 and the second ground electrode GE2 in the horizontal direction (i.e., the extending direction of the first ground electrode GE1 and the second ground electrode GE2) may be zero. In addition, in some other embodiments, the first ground electrode GE1 and the second ground electrode GE2 may partially overlap in the horizontal direction.

[0067] Reference again Figure 1 , the first heating unit HU1 may be below the first ground electrode GE1, and the second heating unit HU2 may be below the second ground electrode GE2. The shape of the first heating unit HU1 may correspond to the first ground electrode GE1, and the shape of the second heating unit HU2 may correspond to the second ground electrode GE2. For example, when the first ground electrode GE1 is a disk-shaped electrode, the first heating unit HU1 may have a disk shape. Alternatively, when the second ground electrode GE2 is a ring-shaped electrode, the second heating unit HU2 may also have a ring shape.

[0068] The first heating unit HU1 and the second heating unit HU2 can be independently controlled. For example, the controller CON can be electrically connected to the first heating unit HU1 and the second heating unit HU2, and can generate a first signal for controlling the first heating unit HU1 and a second heating signal for controlling the heating unit HU2 from the controller CON. The first signal and the second signal can be transmitted to the first heating unit HU1 and the second heating unit HU2 via different channels, respectively. In the above embodiment, multiple heating units are disclosed, but the present disclosure is not limited thereto and can be configured as a single unit. In this case, the controller CON can generate a single signal and transmit the single signal to the heating unit.

[0069] Figure 4A and 4B The present invention is a substrate processing apparatus according to an embodiment of the inventive concept, and is shown in a state where heating elements such as heating wires are omitted for ease of understanding. The substrate processing apparatus according to these embodiments may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given here.

[0070] refer to Figure 4A and Figure 4B The heating block 1 includes RF ground electrodes therein, wherein a plurality of RF ground electrodes are arranged independently of each other. The RF ground electrodes include a first RF ground electrode 2 and a second RF ground electrode 3, and the second RF ground electrode 3 is configured to surround the first RF ground electrode 2. Figure 4A In the embodiment, the first RF ground rod 4 is connected to the first RF ground electrode 2, the second RF ground rod 5 is connected to the second RF ground electrode 3, and the first RF ground electrode 2 and the second RF ground electrode 3 are connected to the ground through the first RF ground rod 4 and the second RF ground rod 5, respectively.

[0071] When a heating block includes a plate-shaped electrode, the electrode's characteristics are process variables that affect processes performed on the substrate. For example, differences in thermal expansion coefficients between the electrode and the heating block during high-temperature processes, the specific shape of the plate-shaped electrode, and other factors can affect the repeatability and uniformity of processes performed on the substrate, such as the uniformity of deposited thin films and the uniformity of plasma on the heating block during thin-film processing. Typically, the plate-shaped electrode in the heating block comprises a single layer of plate-shaped electrodes to achieve plasma uniformity across the substrate. However, in practice, this can lead to degradation of substrate process uniformity due to heat loss, uneven gas flow supplied across the substrate, and other factors. For example, due to uneven gas distribution across the substrate, local deviations in plasma density can occur, potentially degrading the uniformity of thin film properties and thickness at the center and edges of the substrate. However, in the substrate processing apparatus according to the inventive concept, the first RF ground electrode 2 and the second RF ground electrode 3 are arranged spaced apart from each other, enabling independent control of plasma non-uniformity at the center and edges of the substrate, thereby improving the uniformity of thin film properties and the thickness of the thin film on the substrate.

[0072] The first RF ground electrode 2 and the second RF ground electrode 3 can be formed in a grid shape and spaced apart by a distance d1. Typically, the RF ground electrode embedded in the heating block is printed to have a complete plate-like shape. However, during high-temperature processes, the difference in thermal expansion coefficients between the heating block and the embedded RF ground electrode may cause stress differences, leading to damage to the heating block. For example, since the thermal expansion coefficient of the heating block made of AlN material is 4.5x10 -6 / ℃, and the thermal expansion coefficient of the RF ground electrode including Mo material is 4.8x10 -6 / ℃, the stress difference at high temperature may cause the heating block to separate or be damaged.

[0073] On the other hand, in the present disclosure, since the RF ground electrode is mesh-shaped, the constituent material of the heating block (e.g., AlN) is filled between the electrode lines to minimize damage to the heating block due to stress difference. More specifically, as Figure 5 FIG. 1 shows an integrated RF ground electrode 2 in a conventional heating block. The heating block 1 is divided into an upper portion A and a lower portion B by the RF ground electrode 2. During high temperature processing, the upper and lower portions of the heating block may separate or break due to the stress difference (see arrows) between the heating block 1 and the RF ground electrode 2. However, in the embodiment of the present disclosure, Figure 5 In the structure of B, the upper part A and the lower part B of the heating block are connected to each other through the area C between the parts of the mesh of the RF ground electrode. Therefore, the technical feature of this structure is that it can suppress the separation or breakage of the heating block 1 during high temperature processes.

[0074] Reference again Figure 4A and4B , the first RF grounding rod 4 is connected to the first LC resonant circuit 7, and the second RF grounding rod 5 is connected to the second LC resonant circuit 8. The LC circuit includes an inductor L, a capacitor C and a variable capacitor C var , and controls the plasma intensity on the RF ground electrode. In addition to the LC circuit, a circuit for controlling the plasma intensity on the RF ground electrode is also applicable. As an example of the technical features of this configuration, the thickness and characteristics of a thin film on a substrate can be locally controlled. In the case of a heating block, the temperature of the peripheral portion is lower than that of the central portion, and the characteristics or thickness of the thin film in the peripheral portion may be different from those in the central portion. Alternatively, when the exhaust ports of a substrate processing apparatus equipped with a plurality of reactors are arranged asymmetrically, the characteristics or thickness of the thin film at a specific position on the substrate may be different from those of the thin film at the central portion. Therefore, by configuring the heating block according to the present disclosure, it is possible to control and improve the film characteristics and thickness uniformity.

[0075] although Figure 4A The first LC resonant circuit 7 and the second LC resonant circuit 8 are shown to be grounded (i.e., connected to the ground). In other embodiments, the first LC resonant circuit 7 and the second LC resonant circuit 8 may be connected to a controller (not shown). The controller may receive plasma intensity information measured by a plasma probe capable of monitoring the plasma in the reactor in real time, and may control the first LC resonant circuit 7 or the second LC resonant circuit 8 based on the plasma intensity information.

[0076] like Figure 4B As shown, the first RF ground electrode 2 and the second RF ground electrode 3 are separated by a distance d1, thereby facilitating plasma control at the center and edge of the substrate, respectively. Distance d1 has the technical feature of preventing the first RF ground electrode 2 and the second RF ground electrode 3 from contacting each other due to thermal expansion. Preferably, distance d1 is configured to be at least 5 mm or greater.

[0077] Also in Figure 4A In the embodiment, the diameter of the first RF ground electrode 2 is smaller than the diameter of the substrate 6. Therefore, plasma control is facilitated on the inner surface portion except for the edge portion of the substrate 6. The inner diameter of the second RF ground electrode 3 is at least larger than the inner diameter of the substrate 6. Therefore, plasma control is facilitated on the edge portion of the substrate 6.

[0078] exist Figure 4AIn the embodiment of the present invention, the distance d2 between the RF ground electrodes 2 and 3 and the upper surface of the heating block 1 is preferably maintained at 1 mm. When the distance d2 is 1 mm or less, the heating block 1 may be damaged due to deformation caused by thermal expansion of the RF ground electrodes at high temperatures, and when the distance d2 is 1 mm or more, the plasma intensity on the substrate may be reduced, and more RF power needs to be provided to maintain process uniformity.

[0079] The distance d2 between the RF ground electrodes 2 and 3 and the upper surface of the heating block 1 affects the plasma distribution and plasma intensity on the substrate. The RF ground electrodes according to the present disclosure are configured in a mesh shape, and because the portions where the electrode lines intersect in the horizontal and vertical directions (XY axes) are protruding, the distance d2 between the intersecting portions and the surface of the heating block 1 can be different from the distance d2 between the non-intersecting portions and the surface of the heating block 1.

[0080] Figure 6 is a view of a case where the distance between the RF ground electrode and the heating block surface is different for each position; Figure 6 (a) and Figure 6 In (b), the distance from the position where the RF ground electrode line W2 arranged in the X-axis direction and the RF ground electrode line W3 arranged in the Y-axis direction intersect to the upper surface of the heating block 1 is different from the distance from the position where the RF ground electrode line W2 and the RF ground electrode line W3 do not intersect to the upper surface of the heating block 1 (d3 ≠ d4). Therefore, regardless of whether the RF ground lines intersect, the RF ground lines must be arranged so that the distance to the upper surface of the heating block is constant.

[0081] Figure 7 is a diagram of an example of the arrangement of the RF ground line according to the present disclosure. Figure 7 , the distance from the portion where the RF ground electrode lines W2 and W3 arranged in the X and Y axis directions intersect to the upper surface of the heating block 1 is the same as the distance from the portion where the RF ground electrode lines W2 and W3 do not intersect to the upper surface of the heating block 1 (d3=d4). Therefore, Figure 7 The technical feature of the embodiment is that it is easier to accurately control the plasma on the substrate.

[0082] Figure 8 1 is a view of another embodiment of a substrate processing apparatus according to the present disclosure. Figure 8 , the distance d5 between the first RF ground electrode 2 and the surface of the heating block is different from the distance d6 between the second RF ground electrode 3 and the surface of the heating block (d5≠d6).

[0083] according to Figure 8 An embodiment of Figure 4A and 4BAs shown, by utilizing the distance difference between the corresponding RF ground electrodes and the upper surface of the heating block, the plasma intensity can be controlled separately at the center and periphery of the substrate even if a single LC resonant circuit is applied. Figure 4A and 4B Unlike shown, since the two RF ground electrodes are not on the same plane, the distance can be set without taking thermal expansion into account (g=0).

[0084] Figure 9 are cross-sectional views of the heating block according to the present disclosure viewed from different directions.

[0085] refer to Figure 9 , RF ground electrodes 2 and 3 are located between the heating element 9 and the upper surface of the heating block 1. The first RF ground electrode 2 and the second RF ground electrode 3 are connected to the first RF ground rod 4 and the second RF ground rod 5, respectively, and the power rod 10 of the heating block 1 supplies power to the heating element 9.

[0086] Figure 10 is a view of a connection structure between an RF ground electrode and an RF electrode rod.

[0087] refer to Figure 10 , the RF ground electrode 11 is mesh-shaped. Figure 10 In the embodiment, the RF ground electrode 11 and the RF ground electrode rod 12 include the same material, such as Mo, and the RF ground rod 14 includes a conductive material, such as Ni. The buffer electrode rod 13 connects the RF ground electrode rod 12 to the RF ground rod 14 and includes the constituent materials of the RF ground electrode rod 12 and the RF ground rod 14. For example, when the RF ground electrode rod 12 includes Mo and the RF ground rod 14 includes Ni, the buffer electrode rod 13 includes a Mo-Ni alloy. As a result, Figure 10 The technical feature of the embodiment is that the RF ground electrode rod 12 and the RF ground rod 14 including metal materials having different thermal expansion coefficients can be prevented from deviating or separating from each other at high temperatures.

[0088] Figure 11 Shown Figure 9 The upper surface of the heating block 1 is shown, illustrating the arrangement of the RF ground electrodes 2 and 3 and the heating element 9. As described above, each of the RF ground electrodes 2 and 3 is mesh-shaped, and the heating element 9 is arranged to form a two-zone heating block, which is independently disposed at the center and periphery of the heating block 1 and forms a concentric shape with respect to the center of the heating block 1. The second boundary line B2 dividing the two zones of the heating block corresponds to the first boundary line B1 dividing the first RF ground electrode 2 and the second RF ground electrode 3. The first boundary line B1 and the second boundary line B2 can be symmetrical to each other. For example, when the first boundary line B1 and the second boundary line B2 are circles, they can have the same diameter.

[0089] Figure 12 The plasma intensity distribution in a reactor equipped with a heating block according to the present disclosure is shown. Figure 12 It is shown that the plasma intensity is controlled individually by the RF ground electrodes arranged at the center and the periphery, and the plasma intensity can be the same or different depending on the purpose at the substrate.

[0090] Thus, according to an embodiment of the present invention, by arranging mesh-type RF ground electrodes at the center and periphery of a heating block, respectively, and connecting an LC resonant circuit to each RF ground electrode, the plasma intensity on a substrate can be locally controlled during plasma processing, and thin film characteristics or thickness uniformity can be improved.

[0091] It should be understood that the shape of each part of the drawings is exemplary to clearly understand the present disclosure. It should be noted that in addition to the shapes shown, these parts can be modified into various shapes.

[0092] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. The description of features or aspects in each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the appended claims.

Claims

1. A substrate processing device comprising: Power supply unit; a processing unit electrically connected to the power supply unit; as well as a substrate supporting unit below the processing unit, wherein the substrate supporting unit comprises a first grounding electrode and a second grounding electrode, wherein at least one of the first ground electrode and the second ground electrode comprises a mesh ground electrode, The mesh ground electrode comprises: a first ground line extending in a first direction; and a second ground line extending in a second direction different from the first direction, wherein the first grounding line and the second grounding line are electrically connected to each other; wherein, in a plurality of first portions where the first grounding line and the second grounding line intersect each other, a distance between an upper surface of the substrate supporting unit and the first grounding line is greater than a distance between an upper surface of the substrate supporting unit and the second grounding line, and In a second portion excluding the first portion, a distance between an upper surface of the substrate supporting unit and the first ground line is equal to a distance between an upper surface of the substrate supporting unit and the second ground line. 2 . The substrate processing apparatus according to claim 1 , wherein the processing unit is configured to function as an electrode for supplying power to the reaction space. 3 . The substrate processing apparatus according to claim 1 , wherein the second ground electrode is spaced apart from the first ground electrode and is arranged to surround the first ground electrode.

4. The substrate processing apparatus according to claim 1 , wherein the first ground electrode and the second ground electrode are electrically connected to ground, and The substrate processing equipment includes at least one of the following: a first plasma intensity controller connected between the first ground electrode and the ground; and A second plasma intensity controller is connected between the second ground electrode and the ground. 5 . The substrate processing apparatus of claim 4 , wherein at least one of the first plasma intensity controller and the second plasma intensity controller comprises an LC circuit including an inductor, a capacitor, and a variable capacitor. 6 . The substrate processing apparatus of claim 1 , wherein at least one of the first ground electrode and the second ground electrode comprises a plate-shaped ground electrode.

7. The substrate processing apparatus according to claim 1 , wherein the first ground line and the second ground line are in contact with each other at a portion where the first ground line and the second ground line intersect with each other, and The first ground line and the second ground line are electrically connected to each other at a contact therebetween.

8. The substrate processing apparatus according to claim 1 , wherein the first ground line and the second ground line are spaced apart from each other at a portion where the first ground line and the second ground line intersect each other, and The first ground line and the second ground line are electrically connected to each other by a conductive member that connects an end portion of the first ground line to an end portion of the second ground line.

9. The substrate processing apparatus according to claim 1, wherein the first ground electrode comprises a first mesh ground electrode, and The second ground electrode comprises a second mesh ground electrode, The first meshed ground electrode and the second meshed ground electrode have different mesh densities. 10 . The substrate processing apparatus of claim 1 , wherein the first ground electrode is arranged at a different level from that of the second ground electrode. 11 . The substrate processing apparatus of claim 10 , wherein the first ground electrode and the second ground electrode partially overlap.

12. The substrate processing apparatus according to claim 1, further comprising: a first electrode rod contacting the first ground electrode; as well as The first electrode rod is electrically connected to a grounded first connecting rod. 13 . The substrate processing apparatus of claim 12 , further comprising a first buffer rod between the first electrode rod and the first connecting rod.

14. The substrate processing apparatus of claim 13, wherein the first electrode rod comprises a first metal component, and the first connecting rod comprising a second metal composition different from the first metal composition, The first buffer rod includes an alloy component of the first metal component and the second metal component.

15. The substrate processing apparatus according to claim 1, wherein the substrate supporting unit further comprises: a first heating unit below the first ground electrode; as well as a second heating unit below the second ground electrode, The first heating unit and the second heating unit are independently controlled.

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