Chip package and method of forming chip package

Abstract

A chip package is provided, which may include: at least one chip; an exposed metal region; a metal protection layer structure on the exposed metal region and configured to protect the metal region from oxidation, the protection layer structure including a low-temperature deposited oxide; and a hydrothermally converted metal oxide layer located on the protection layer structure.

Description

Technical Field

[0001] Various embodiments generally relate to a chip package and a method of forming a chip package. Background Art

[0002] The chip package may include various materials that form interfaces with encapsulation materials, such as molding compounds. In order to ensure high reliability of the chip package, it may be necessary to form a strong and long-term reliable bond between the various materials, especially the metal surface and the molding compound. In addition, the chip package may need protection to prevent moisture and oxidation of the metal surface. Summary of the invention

[0003] A chip package is provided, which may include: at least one chip; an exposed metal region; a metal protection layer structure on the exposed metal region and configured to protect the metal region from oxidation, the protection layer structure including a low-temperature deposited oxide; and a hydrothermally converted metal oxide layer located on the protection layer structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] In the accompanying drawings, similar or identical reference numerals generally refer to the same parts throughout the different views. The drawings are not necessarily drawn to scale, but emphasis is generally placed on illustrating the principles of the invention. In the following description, various embodiments of the invention will be described with reference to the following drawings, in which:

[0005] Figure 1 Visually presenting a method of forming a chip package according to the prior art;

[0006] Figure 2A-2C shows a schematic cross-sectional view of a chip package according to various embodiments;

[0007] Figures 3A-3D visually presenting a method of forming a chip package according to various embodiments; and

[0008] Figure 4 A flowchart of a method of forming a chip package according to various embodiments is shown. DETAILED DESCRIPTION

[0009] The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and embodiments in which the invention may be practiced.

[0010] The word “exemplary” is used herein to mean “serving as an example, instance, or illustration.” Any embodiment or design described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments or designs.

[0011] The term "above" as used in relation to forming a deposited material "above" a side or surface may be used herein to indicate that the deposited material may be formed "directly" on, for example, in direct contact with, the corresponding side or surface. The term "above" as used in relation to forming a deposited material "above" a side or surface may also be used herein to indicate that the deposited material may be formed "indirectly" on the corresponding side or surface such that one or more additional layers are disposed between the corresponding side or surface and the deposited material.

[0012] Future requirements for chip packages will require withstanding temperatures of up to 200°C in testing and service while providing the same or better reliability. To achieve this, new solutions must be found that prevent substrate oxidation and are compatible with current and future material sets.

[0013] Various methods have been proposed or used in the past to enhance the adhesion of encapsulation materials to encapsulated structures, such as metal surfaces, in chip packages, all of which have one or more disadvantages.

[0014] In a known method of forming an inorganic binder, Zn / Cr dendrites are electrochemically grown on a (e.g., metal) surface. This can be a relatively inexpensive method that can allow for reliable bonding between the surface and the encapsulating material and can even provide moisture and oxidation protection. However, the electrochemical process used to form the dendrites requires Cr-6, which is carcinogenic.

[0015] In a so-called primer treatment, a difunctional silane (e.g. aminopropyltriethoxysilane) may be dispensed on a (e.g. metal) surface to provide adhesion between the metal and an encapsulating material such as an epoxy molding compound. This may be easy to achieve, and the silane is not carcinogenic. However, the bond is not as reliable as that provided by the A2 process, and no protection against oxidation is provided.

[0016] Surface roughening can be performed on the leadframe surface, which is easy to implement and provides a cheap, strong adhesion promotion. However, no protection against oxidation is provided and the adhesion promotion is limited to the leadframe even though the top of the chip is always a critical area.

[0017] Aluminum oxide (Al2O3) layers (doped with silicon or covered with silicon oxide (SiO2) to prevent Al2O3 degradation) can be used as reaction inhibitors and moisture barriers. However, doped aluminum oxide or silicon oxide may not allow for strong adhesion to the encapsulation material.

[0018] By converting aluminum oxide (Al2O3) into a "coral"-like pseudo-boehmite structure by means of a hydrothermal process, very strong adhesion promotion is achieved, the material is non-carcinogenic and can grow on every surface even without an electrical connection to the frame. However, protection against oxidation is not guaranteed and no moisture protection is provided.

[0019] exist Figure 1 1 shows a metal region 102 that may be part of a prior art chip package. On the metal region 102, a converted aluminum oxide 106 may be disposed by forming an aluminum oxide layer 104 (shown on the left) and hydrothermally converting the aluminum oxide layer 104 to form a hydrothermally converted metal oxide layer 106 (shown on the right).

[0020] AlOOH dendrites have an open porous structure that has shown very good potential to be used as a suitable adhesion promoter for current and future molding materials over a wide range of filler sizes and viscosities.

[0021] However, the hydrothermally converted metal oxide layer 106 has weak points with respect to corrosion protection under humid conditions.

[0022] Typically, the hydrothermal conversion may convert the entire aluminum oxide layer 104 into the hydrothermally converted metal oxide layer 106, or may leave only a very thin residual unconverted aluminum oxide layer (not shown).

[0023] The reason for this is that the aluminum oxide layer 104 must be as thin as possible for economic reasons and needs to have the necessary thickness to provide sufficient roughness to provide strong adhesion. In this thickness range (approximately between 1 and 30 nm), it may be difficult to control the remaining thickness of the dense (i.e., non-hydrothermally converted) aluminum oxide layer 104 to be sufficient to prevent future oxidation of the metal region 102. However, it may be necessary to ensure good adhesion, especially in the case where the metal region 102 is a copper lead frame. Therefore, if only the temperature and time are controlled during the hydrothermal conversion process, there is a high risk that the remaining aluminum oxide layer 104 is too thin to protect the metal structure from moisture and oxidation.

[0024] However, even if it were possible to control the residual thickness of the desired dense layer of aluminum oxide that may remain after the (in this case partial) hydrothermal conversion, guaranteed long-term protection cannot be achieved: experiments have shown that the conversion process continues in a humid hot environment and further adhesion degradation and moisture penetration cannot be prevented.

[0025] In various embodiments, a chip package having a layer stack structure is provided, which includes a metal protective layer structure on an exposed metal region of the chip package, and a hydrothermally converted metal oxide layer on the protective layer structure. The protective layer structure can be configured to protect the metal region from oxidation (in other words, "metal protective layer structure" should be understood as "protective layer structure for protecting metal", rather than "protective layer structure made of metal").

[0026] In various embodiments, the protective layer structure may have an oxidation protective layer and a degradation protective layer, wherein the degradation protective layer protects the oxidation protective layer from degradation, for example by acting as a moisture barrier. The oxidation protective layer may, for example, include or consist of a metal oxide, such as aluminum oxide. The degradation protective layer may, for example, include or consist of an oxide, such as silicon dioxide.

[0027] A hydrothermally converted metal oxide layer, such as a hydrothermally converted aluminum oxide layer (also known as "bohemite aluminum hydroxide"), can act as an adhesion promoter to increase adhesion between exposed metal areas (optionally, additionally between other exposed surfaces) and the encapsulating material.

[0028] In various embodiments, a method of forming a chip package is provided that increases process control over the process of forming an adhesion promoter via hydrothermal conversion of aluminum oxide, thereby improving the reliability of the formed chip package.

[0029] Figure 2A-2C Each of them shows a schematic cross-sectional view of a chip package 200 according to various embodiments, Figures 3A-3D Each of 200 visually presents a method of forming a chip package 200 according to various embodiments.

[0030] Chip package 200 may include at least one chip 222 , eg a semiconductor chip.

[0031] Chip package 200 may include exposed metal region 102 . Figure 2A An embodiment is shown in which the exposed metal region 102 is a chip pad, such as a source pad and / or a gate pad. In various embodiments, the exposed metal region may alternatively or additionally include a different or additional chip pad (e.g., a drain pad), a lead frame (e.g., Figure 2B and 2C As shown), wire connection structure, clip and belt connection structure, etc.

[0032] In various embodiments, the exposed metal region 102 may include at least one of a group of materials, the group consisting of: copper (Cu), nickel (Ni), aluminum (Al), gold (Au), silver (Ag), palladium (Pd) and their alloys, such as NiP and / or PdAuAg.

[0033] The chip package 200 may further include a metal protection layer structure 220 over the exposed metal region 102 .

[0034] The chip package 200 may further include a hydrothermally converted metal oxide layer 106 on the metal protection layer structure 220 .

[0035] The metal protection layer structure 220 may be configured to protect the exposed metal region 102 from oxidation. The metal protection layer structure 220 may include or consist of a low temperature deposited oxide. The low temperature deposited oxide may include or consist of an amorphous oxide or a microcrystalline oxide.

[0036] The thickness of the metal protection layer structure 220 may be in the range of about 0.1 nm to about 20 nm, for example, in the range of about 0.1 nm to about 10 nm, for example, about 0.5 nm to about 10 nm.

[0037] The low temperature deposited oxide may include or consist of a metal oxide, such as titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5) and zirconium dioxide. Alternatively or additionally, silicon dioxide may be used. In various embodiments, the low temperature deposited oxide may be arranged as a top layer of the metal protective layer structure 220. In other words, the topmost layer of the metal protective layer structure 220 that may be in direct contact with the hydrothermally converted metal oxide layer 106 may include or consist of titanium dioxide, zinc oxide, hafnium dioxide, zirconium dioxide, tantalum pentoxide (Ta2O5) and / or silicon dioxide.

[0038] Figure 3A and Figure 3D The case where the entire metal protection layer structure 220 is formed of metal oxide is shown.

[0039] In various embodiments, the metal protection layer structure 220 may include aluminum oxide, for example as the oxidation protection layer 220_1 . In this case, the aluminum oxide may be susceptible to moisture.

[0040] As described in the literature, if a cover layer is added, degradation of Al2O3 in a humid hot environment can be prevented. Therefore, in various embodiments, the oxidation protection layer 220_1 can be protected by a cover layer 220_2, for example, the cover layer includes or consists of titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5) and zirconium dioxide and / or silicon dioxide. This is Figure 3B It is shown in an exemplary manner.

[0041] Alternatively or additionally, the aluminum oxide layer 220_1 may be doped, for example with silicon, in order to render the aluminum oxide layer 220_1 moisture-proof by forming a moisture-proof doped region 332 in the aluminum oxide layer 220_1. Figure 3C It is shown in an exemplary manner.

[0042] In various embodiments, the hydrothermally converted metal oxide layer 106 may include or consist of an aluminum hydroxide layer. The hydrothermally converted metal oxide layer 106 may be formed on the metal capping layer structure 220 by forming a metal oxide layer, such as an aluminum oxide layer 104, on the metal capping layer structure 220, and by inducing hydrolysis in the aluminum oxide layer 104, such as by applying heat and moisture simultaneously.

[0043] The thickness of the hydrothermally converted metal oxide layer 106 may be in a range from about 1 nm to about 50 nm, for example, in a range from about 3 nm to about 30 nm.

[0044] The hydrothermal conversion process may, for example, include placing the metal oxide layer (e.g., a portion of the chip package 200 that has not yet been encapsulated, such as a complete chip package 200 that has not yet been encapsulated, wherein the metal oxide layer forms the top surface) in a heated aqueous solution. Depending on the temperature and duration of the hydrothermal conversion process, the metal oxide layer may be completely converted into the hydrothermally converted metal oxide layer 106, or the metal oxide layer (which may be a partial layer) may remain between the metal protection layer structure 220 and the hydrothermally converted metal oxide layer 106.

[0045] In various embodiments, the chip package 200 may further include an encapsulation material 226 , eg a molding compound, eg a molding compound known in the art. The encapsulation material 226 may be attached to at least a portion of the exposed metal region 102 through the metal protection layer structure 220 and the hydrothermally converted metal oxide layer 106 .

[0046] In various embodiments, the metal capping layer structure 220 and the hydrothermally converted metal oxide layer 106 may be formed not only over the one or more exposed metal regions 102 , but may also be additionally formed over other regions.

[0047] In various embodiments, the metal capping layer structure 220 and the hydrothermally converted metal oxide layer 106 may be formed on a non-metallic region, for example, on a semiconductor material. Figure 2C It is shown in an exemplary manner in FIG. 2 , wherein metal protection layer structure 220 and hydrothermally converted metal oxide layer 106 cover portions of chip 222 that are not covered by metal regions 102 used as metal pads.

[0048] In various embodiments, the chip package 200 may include an additional non-metallic region, for example, a non-metallic layer (not shown), wherein the encapsulation material is also attached to at least a portion of the non-metallic region, for example, the non-metallic layer. The non-metallic layer may, for example, include or consist of an organic material, for example, imide.

[0049] The metal capping layer structure 220 may be an adhesive layer structure. In various embodiments where the metal capping layer structure 220 is a single layer, e.g., formed of a single material, the material may be selected to adhere to the exposed metal region 102 and the hydrothermally converted metal oxide layer 106. This may be the case for each of the materials listed above for the metal capping layer structure 220.

[0050] In various embodiments where the metal cap layer structure 220 is a multi-layer formed from a plurality of individual layers, it may be sufficient to select the material of each layer to adhere to the corresponding layer with which it forms an interface.

[0051] The following will describe in more detail an exemplary embodiment Figure 3B The process shown in .

[0052] The first layer, for example, the oxidation protection layer 220_1, which may be composed of, for example, Al2O3, the aluminum oxide layer 104, which also serves as an oxidation protection layer, may be disposed on the substrate, for example, at least on the exposed metal region 102 (for example, the assembled device after wire connection), for example, using atomic layer deposition (ALD). The thickness of the aluminum oxide layer 220_1 may be, for example, in the range of about 1 nm to about 20 nm, preferably, for example, in the range of about 3 nm to about 8 nm, for example, about 5 nm.

[0053] Subsequently, a second layer, for example, a covering layer 220_2 which may include or consist of silicon dioxide, titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5) and / or zirconium dioxide or / and may be deposited on the first (Al2O) layer (i.e., oxidation protection layer 220_1, aluminum oxide layer 104) to prevent further degradation of the first (Al2O3) layer 220_1 under humid conditions and to act as a reaction stopper in subsequent hydrothermal conversion.

[0054] Thereafter, an aluminum oxide layer 104 may be deposited as a third layer on the second layer 220_2. The aluminum oxide layer 104 may be hydrothermally converted into a porous boehmite, such as an AlOOH structure, which may provide excellent adhesion promotion.

[0055] Through the above process, the metal protection layer structure 220 may be formed into a stacked structure of Al 2 O 3 / SiO 2 / Al 2 O 3 .

[0056] The bottom layer 220_1 of Al2O3 may be deposited at a temperature and thickness sufficient to prevent future oxidation of the underlying substrate (eg, Cu lead frame).

[0057] A top aluminum oxide layer 104 may be deposited at a certain thickness, which may be subsequently converted into an adhesion promoting structure (hydrothermally converted metal oxide layer 106) by hydrothermal treatment (eg, hot water immersion).

[0058] As another way of expressing this: since it is difficult to control the hydrothermal conversion without completely converting the entire alumina layer 104 present into the adhesion promoting structure 106 (otherwise the oxidation protection provided by the alumina would be lost), in order to make the process controllable, a core layer is provided.

[0059] The central layer, which may for example include or consist of silicon dioxide, titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5) and / or zirconium dioxide, can actively prevent the entire aluminum oxide layer 104 from being converted into the adhesion promoting structure 106, thus ensuring that after the hydrothermal treatment, there is still enough aluminum oxide 220_1 on the underlying substrate to prevent future oxidation. In addition to feasible process control (self-limiting process), the intermediate layer of silicon dioxide, titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5) and / or zirconium dioxide can be an effective moisture barrier to prevent moisture migration to the chip surface, for example into and / or along the exposed metal area 102.

[0060] Chip package 200 may provide excellent adhesion promotion between exposed metal region 102 (and optionally other regions of chip package 200 forming an interface with an encapsulation material) and encapsulation material 226 , such as a molding compound.

[0061] The chip package 200 can further ensure that the dense aluminum oxide layer 104 will not degrade further, and the aluminum oxide layer can serve as oxidation protection for the exposed metal area 102. In addition, the intermediate layer can provide a self-limiting process stop for the hydrothermal conversion step, which can greatly reduce the machine cost of the process.

[0062] Can be used Figure 2A-2C Combinations of the embodiments with each other and / or Figures 3A-3D The embodiments of the present invention are combined with each other, for example, the Al2O3 layer 220_2 is below the metal protection layer structure 220 (such as Figure 3B ) and the aluminum oxide layer 104 is above the metal protection layer structure 220 (as shown Figure 3D As shown), or for example, a doped Al2O3 layer is used as a metal protective layer structure 220 (as shown Figure 3C ) and combining it with the Al2O3 layer above the metal protection layer structure 220 (as shown Figure 3D shown). Figure 2A The chip pad, that is, the metal area 102, Figure 2B The chip pad, i.e., the metal area 102 and the lead frame surface 224 and / or Figure 2C The entire surface shown in contact with the encapsulation material 226 can be used in conjunction with their corresponding metal protective layer structures 220. Figures 3A-3D Any layer structure shown in the above.

[0063] Figure 4 A flowchart 400 of a method of forming a chip package including a chip and an exposed metal region according to various embodiments is shown.

[0064] The method may include forming a metal protective layer structure over the exposed metal region, wherein the metal protective layer structure is configured to protect the metal region from oxidation, forming the protective layer structure includes low temperature depositing an oxide (410), and forming a hydrothermally converted metal oxide layer over the protective layer structure (420).

[0065] Each example is described below:

[0066] Example 1 is a chip package. The chip package includes: at least one chip; an exposed metal region; a metal protection layer structure on the exposed metal region and configured to protect the metal region from oxidation, the protection layer structure including a low-temperature deposited oxide; and a hydrothermally converted metal oxide layer on the protection layer structure.

[0067] In Example 2, the subject matter of Example 1 can optionally further include that the low temperature deposited oxide includes or consists of a metal oxide.

[0068] In Example 3, the subject matter of Example 1 or 2 can optionally further include that the hydrothermally converted metal oxide layer includes or consists of an aluminum hydroxide layer.

[0069] In Example 4, the subject matter of any of Examples 1-3 can optionally further include an aluminum oxide layer between the metal protective layer structure and the hydrothermally converted metal oxide layer.

[0070] In Example 5, the subject matter of any one of Examples 1-4 may optionally further include: the metal protective layer structure includes a top layer, the top layer includes at least one of a group of materials, the group including silicon dioxide, titanium dioxide, zinc oxide, hafnium dioxide, tantalum pentoxide (Ta2O5) and zirconium dioxide.

[0071] In Example 6, the subject matter of Example 5 can optionally further include that the metal protection layer structure includes an aluminum oxide layer between the top layer and the exposed metal region.

[0072] In Example 7, the subject matter of any one of Examples 1-4 can optionally further include that the metal cap layer structure includes aluminum oxide having a top layer of doped aluminum oxide.

[0073] In Example 8, the subject matter of any of Examples 1-7 can optionally further include that the exposed metal region includes at least one of a group of metal regions, the group including a die pad, a lead frame, a wire connection structure, a clip, and a ribbon connection structure.

[0074] In Example 9, the subject matter of any of Examples 1-8 may optionally further include: the exposed metal area includes at least one of a group of materials, the group including copper (Cu), nickel (Ni), aluminum (Al), gold (Au), silver (Ag), palladium (Pd) and alloys thereof, such as nickel phosphide (NiP) and / or PdAuAg.

[0075] In Example 10, the subject matter of any one of Examples 1-9 can optionally further include: the low temperature deposited oxide of the metal protection layer structure is an amorphous oxide or a microcrystalline.

[0076] In Example 11, the subject matter of any of Examples 1-10 can optionally further include: an encapsulation material attached to at least a portion of the exposed metal region through the metal protective layer structure and the hydrothermally converted metal oxide layer.

[0077] In Example 12, the subject matter of any of Examples 1-11 can optionally further include: a non-metallic layer, wherein the encapsulation material is also attached to at least a portion of the non-metallic layer.

[0078] In Example 13, the subject matter of Example 12 can optionally further include that the non-metallic layer includes or consists of an organic material, such as imide.

[0079] In Example 14, the subject matter of any one of Examples 1-13 can optionally further include: the metal protection layer structure forming a hydrolysis stop layer.

[0080] In Example 15, the subject matter of any one of Examples 1-14 can optionally further include: the metal protection layer structure is an adhesive layer structure.

[0081] Example 16 is a method of forming a chip package including a chip and an exposed metal region. The method may include: forming a metal protection layer structure over the exposed metal region, wherein the metal protection layer structure is configured to protect the metal region from oxidation, wherein forming the protection layer structure includes low temperature deposition of oxide; and forming a hydrothermally converted metal oxide layer over the protection layer structure.

[0082] In Example 17, the subject matter of Example 16 can optionally further include that the low temperature deposited oxide includes or consists of a metal oxide.

[0083] In Example 18, the subject matter of Example 16 or 17 can optionally further include: the hydrothermally converted metal oxide layer includes or consists of an aluminum hydroxide layer.

[0084] In Example 19, the subject matter of any of Examples 16-18 can optionally further include: forming an aluminum oxide layer between the metal protective layer structure and the hydrothermally converted metal oxide layer.

[0085] In Example 20, the subject matter of any one of Examples 16-19 may optionally further include: forming the metal protective layer structure includes forming a top layer, the top layer including at least one of a group of materials, the group including silicon dioxide, hafnium dioxide, titanium dioxide, zinc oxide, and zirconium dioxide.

[0086] In Example 21, the subject matter of Example 20 can optionally further include: forming the metal protection layer structure includes forming an aluminum oxide layer between the top layer and the exposed metal area.

[0087] In Example 22, the subject matter of any one of Examples 16-19 may optionally further include: forming the metal protection layer structure includes: forming an aluminum oxide layer; and doping a top layer of the aluminum oxide layer, for example, doping with silicon.

[0088] In Example 23, the subject matter of any of Examples 16-22 can optionally further include: the exposed metal region includes at least one of a group of metal regions, the group consisting of a chip pad, a lead frame, a wire connection structure, a clip, and a ribbon connection structure.

[0089] In Example 24, the subject matter of any of Examples 16-23 may optionally further include: the exposed metal area includes at least one of a group of materials, the group including copper (Cu), nickel (Ni), aluminum (Al), gold (Au), silver (Ag), palladium (Pd) and their alloys, such as nickel phosphide (NiP) and / or PdAuAg.

[0090] In Example 25, the subject matter of any one of Examples 16-24 can optionally further include: the low temperature deposited oxide of the metal cap structure is an amorphous oxide or a microcrystalline.

[0091] In Example 26, the subject matter of any of Examples 16-25 can optionally further include forming an encapsulation material attached to at least a portion of the exposed metal region through the metal protection layer structure and the hydrothermally converted metal oxide layer.

[0092] In Example 27, the subject matter of Example 26 can optionally further include: forming a non-metallic layer; wherein the encapsulation material is also attached to at least a portion of the non-metallic layer.

[0093] In Example 28, the subject matter of Example 27 can optionally further include that the non-metallic layer includes or consists of an organic material, such as imide.

[0094] In Example 29, the subject matter of any of Examples 16-28 can optionally further include: the metal protection layer structure forming a hydrolysis stop layer.

[0095] In Example 30, the subject matter of any of Examples 16-29 can optionally further include: the metal protection layer structure being configured to serve as an adhesion layer for the exposed metal area.

[0096] In Example 31, the subject matter of any of Examples 16-30 can optionally further include: forming a hydrothermally converted metal oxide layer over the protective layer structure includes forming the metal oxide layer over the protective layer structure, and placing the metal oxide layer in a heated aqueous solution.

[0097] Although the present invention has been particularly shown and described with reference to specific embodiments, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the present invention as defined by the appended claims. Therefore, the scope of the present invention is indicated by the appended claims, and therefore it is intended to include all changes within the meaning and scope of the equivalence of the claims.

Claims

1. A chip package, comprising: At least one chip; Exposed metal areas; a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation, the protection layer structure comprising a low temperature deposited oxide; and • A hydrothermally converted metal oxide layer located on top of the protective layer structure.

2. The chip package according to claim 1, in, The low temperature deposited oxide comprises or consists of a metal oxide.

3. The chip package according to claim 1 or 2, in, The hydrothermally converted metal oxide layer comprises or consists of an aluminum hydroxide layer.

4. The chip package according to claim 1 or 2, wherein: The chip package further comprises: An aluminum oxide layer is located between the metal protective layer structure and the hydrothermally converted metal oxide layer.

5. The chip package according to claim 1 or 2, in, The metal protective layer structure includes a top layer, the top layer includes at least one of a group of materials, the group including: Silicon dioxide; Titanium dioxide; Zinc oxide; Hafnium dioxide; Tantalum pentoxide; and Zirconium dioxide.

6. The chip package according to claim 5, in, The metal cap layer structure includes an aluminum oxide layer between the top layer and the exposed metal area.

7. The chip package according to claim 1 or 2, in, The metal cap layer structure includes aluminum oxide having a top layer of doped aluminum oxide.

8. The chip package according to any one of claims 1 to 2 and 6, in, The exposed metal region comprises at least one of a group of metal regions, the group comprising: Chip pads; Lead frame; Wire connection structure; Clip; and With connecting structure.

9. The chip package according to any one of claims 1 to 2 and 6, in, The exposed metal region comprises at least one of a group of materials, the group consisting of: Copper (Cu); Nickel (Ni); Nickel phosphide (NiP); Aluminum (Al); Gold (Au); Silver (Ag); Palladium (Pd) and Their alloys.

10. The chip package according to claim 9, wherein: The alloy is PdAuAg.

11. The chip package according to any one of claims 1 to 2, 6 and 10, wherein: The chip package further comprises: An encapsulating material is attached to at least a portion of the exposed metal region through the metal protective layer structure and the hydrothermally converted metal oxide layer.

12. The chip package according to claim 11, wherein: The chip package further comprises: Non-metallic layer; Wherein, the encapsulating material is further attached to at least a portion of the non-metallic layer.

13. The chip package according to any one of claims 1 to 2, 6, 10 and 12, in, The metal protection layer structure forms a hydrolysis stop layer.

14. The chip package according to any one of claims 1 to 2, 6, 10 and 12, in, The metal protective layer structure is an adhesive layer structure.

15. A method of forming a chip package comprising a chip and an exposed metal region, the method comprising: forming a metal protection layer structure over the exposed metal region, wherein the metal protection layer structure is configured to protect the metal region from oxidation, wherein forming the protection layer structure comprises low temperature deposition of oxide; and • Formation of a hydrothermally converted metal oxide layer on top of the protective layer structure.

16. The method according to claim 15, in, The low temperature deposited oxide comprises or consists of a metal oxide.

17. The method according to claim 15 or 16, in, The hydrothermally converted metal oxide layer comprises or consists of an aluminum hydroxide layer.

18. The method according to claim 15 or 16, in, Forming the metal protective layer structure includes forming a top layer, the top layer including at least one of a group of materials, the group including: Silicon dioxide; Hafnium dioxide; Titanium dioxide; Zinc oxide; Tantalum pentoxide; and Zirconium dioxide.

19. The method according to claim 15 or 16, in, Forming the metal protective layer structure includes: Forming an aluminum oxide layer; and • Doping the top layer of the aluminum oxide layer.

20. The method according to claim 15 or 16, wherein: The method further comprises: An encapsulation material is formed that is attached to at least a portion of the exposed metal region through the metal protective layer structure and the hydrothermally converted metal oxide layer.

21. The method according to claim 15 or 16, in, The hydrothermally converted metal oxide layer is formed on the protective layer structure including: forming a metal oxide layer over the protective layer; and • Placing the metal oxide layer in a heated aqueous solution.

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