Film thickness measuring device, film forming device, film thickness measuring method, method for manufacturing electronic device, and storage medium

Abstract

The present invention relates to a film thickness measuring device, a film forming device, a film thickness measuring method, a method for manufacturing an electronic device, and a storage medium. It is possible to suppress a decrease in the measurement accuracy of the film thickness of a substrate cut out from a large substrate. The film thickness measuring device comprises: a substrate supporting member that supports any one of a plurality of substrates obtained by dividing a large substrate; a measuring member that optically measures the film thickness of a film formed on a substrate supported by the substrate supporting member; and a control member that controls the measuring member. The acquisition member acquires substrate information related to a position of the substrate supported by the substrate supporting member in the large substrate before division. The control member determines the measurement conditions of the measuring member based on the substrate information acquired by the acquisition member.

Description

Technical Field

[0001] The present invention relates to a film thickness measuring device, a film forming device, a film thickness measuring method, a method for manufacturing an electronic device, and a storage medium. Background Art

[0002] The manufacturing process of an organic EL display or the like includes a film forming process of forming a film on a substrate. In order to confirm the film thickness of the film formed in the film forming process, the film thickness of the film formed on the substrate is sometimes measured by an optical method (Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application No. 2012-502177

[0006] Problems to be solved by the invention

[0007] Organic EL displays are manufactured by forming multiple layers on a substrate using various film-forming processes. At this time, depending on the situation of the production line, a large substrate (also called mother glass) is sometimes processed before a certain process, and then the large substrate is cut and divided into multiple smaller substrates, and the divided substrates are subjected to film-forming and other processes in subsequent processes. For example, in the manufacture of organic EL displays for smartphones, the backplane process (TFT formation process, anode formation process, etc.) performs film-forming processes on the sixth-generation large substrate (about 1500mm×about 1850mm). Afterwards, the large substrate is cut in half to make a sixth-generation half-cut substrate (about 1500mm×about 925mm), and the subsequent process performs film-forming and other processes on the sixth-generation half-cut substrate.

[0008] In this case, when measuring the film thickness of the film formed in the film forming process after the segmentation process, the film thickness is measured sequentially for substrates with different cut-out parts. However, among the substrates cut out from the large substrate, depending on which part of the large substrate is cut out (for example, from the left half or the right half of the mother glass), the characteristics of the substrate such as size and rigidity distribution are sometimes different. If the characteristics of the substrate are different, the bending mode and undulation mode of the substrate are also different, and sometimes the positional relationship of the substrate relative to the film thickness measuring device, such as the distance and inclination, changes according to the characteristics of the substrate. As a result, the measurement conditions during the film thickness measurement change, which sometimes affects the measurement accuracy. Summary of the invention

[0009] The present invention provides a technology for suppressing a decrease in the measurement accuracy of the film thickness of a substrate cut out from a large substrate.

[0010] Solutions to Solve Problems

[0011] According to one aspect of the present invention, there is provided a film thickness measuring device, comprising:

[0012] a substrate support member for supporting any one of a plurality of substrates obtained by dividing a large substrate;

[0013] a measuring member that optically measures a film thickness of a film formed on the substrate supported by the substrate supporting member; and

[0014] a control member, the control member controlling the measuring member,

[0015] It is characterized in that

[0016] The film thickness measuring device includes an acquisition unit that acquires substrate information related to a portion of the substrate supported by the substrate support member before being divided in the large substrate.

[0017] The control means determines a measurement condition of the measurement means based on the substrate information acquired by the acquisition means.

[0018] According to another aspect of the present invention, there is provided a film thickness measuring device, comprising:

[0019] a substrate support member for supporting any one of a plurality of substrates obtained by dividing a large substrate;

[0020] a measuring member that optically measures a film thickness of a film formed on the substrate supported by the substrate supporting member; and

[0021] a control member, the control member controlling the measuring member,

[0022] It is characterized in that

[0023] The film thickness measuring device includes an acquisition unit that acquires substrate information related to a portion of the substrate supported by the substrate support member before being divided in the large substrate.

[0024] The measuring means measures the film thickness under different measuring conditions according to the substrate information acquired by the acquiring means.

[0025] According to another aspect of the present invention, there is provided a film forming device, comprising:

[0026] a film forming member that forms a film on a substrate; and

[0027] a film thickness measuring device for measuring the film thickness of a film formed on the substrate by the film forming member,

[0028] It is characterized in that

[0029] The film thickness measuring device is the film thickness measuring device of the above-mentioned embodiment.

[0030] According to another aspect of the present invention, there is provided a film thickness measuring method, comprising a supporting step and a measuring step, wherein in the supporting step, any one of a plurality of substrates obtained by dividing a large substrate is supported, and in the measuring step, the film thickness of a film formed on the substrate supported by the supporting step is optically measured.

[0031] It is characterized in that

[0032] The film thickness measurement method comprises:

[0033] an acquisition step of acquiring substrate information related to a portion of the substrate to be measured before being divided in the large substrate; and

[0034] A determination step in which measurement conditions in the measurement step are determined based on the substrate information acquired in the acquisition step.

[0035] According to another aspect of the present invention, there is provided a film thickness measuring method, comprising a supporting step and a measuring step, wherein in the supporting step, any one of a plurality of substrates obtained by dividing a large substrate is supported, and in the measuring step, the film thickness of a film formed on the substrate supported by the supporting step is optically measured.

[0036] It is characterized in that

[0037] The film thickness measurement method comprises an acquisition step, in which substrate information related to a portion of the large substrate before the substrate to be measured is acquired.

[0038] In the measuring step, the film thickness is measured under different measuring conditions according to the acquired substrate information.

[0039] In addition, according to another embodiment of the present invention, a method for manufacturing an electronic device is provided, wherein the method for manufacturing an electronic device comprises:

[0040] a film forming step of forming a film on a substrate; and

[0041] A film thickness measuring step, in which the film thickness of the film formed on the substrate in the film forming step is measured using the film thickness measuring method of the above-mentioned aspect.

[0042] According to another aspect of the present invention, there is provided a storage medium that can be read by a computer, wherein the storage medium stores a program for causing the computer to execute each step of the film thickness measuring method according to the above aspect.

[0043] Effects of the Invention

[0044] According to the present invention, it is possible to provide a technique for suppressing a decrease in the measurement accuracy of the film thickness of a substrate cut out from a large substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 A schematic diagram of a portion of a production line for electronic devices.

[0046] Figure 2 This is a schematic diagram of a film forming apparatus according to one embodiment.

[0047] Figure 3 (A) is a cross-sectional view schematically showing the internal structure of the delivery chamber. Figure 3 (B) is a plan view schematically showing the structure of the support unit.

[0048] Figure 4 This is a block diagram showing a configuration example of hardware of a device installed in a delivery room and its control device.

[0049] Figure 5 It is a diagram showing an overview of edge alignment.

[0050] Figure 6 It is a schematic diagram showing the structure of a substrate.

[0051] Figure 7 The diagram shows examples of a large substrate and a cut substrate.

[0052] Figure 8 This is a diagram for explaining the influence of the difference in the length of the short side of the substrate on the film thickness measurement.

[0053] Fig. 9 (A) and (B) are diagrams for explaining the influence of differences in substrate characteristics on film thickness measurement.

[0054] Fig.10 (A) and (B) are flowcharts showing processing examples of the processing unit.

[0055] Fig.11 It is a diagram showing an example of information managed by the storage unit.

[0056] Fig.12(A) is an overall view of an organic EL display device, and (B) is a view showing a cross-sectional structure of one pixel.

[0057] Description of Reference Numerals

[0058] 1 film forming device, 16 alignment mechanism, 161 support unit (substrate support member), 17 film thickness measuring unit (measuring member), 172 sensor unit, 173 adjustment unit, 3111 processing unit (acquisition member, control member), 100 substrate, 101 mask DETAILED DESCRIPTION

[0059] Hereinafter, the embodiments are described in detail with reference to the accompanying drawings. In addition, the following embodiments do not limit the invention involved in the claims. A plurality of features are described in the embodiments, but all of these plurality of features are not limited to the features necessary for the invention, and a plurality of features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same or similar structures are marked with the same reference numerals, and repeated descriptions are omitted.

[0060] <Production line for electronic devices>

[0061] Figure 1 This is a schematic diagram showing a part of the structure of a production line of electronic devices to which the film-forming apparatus of the present invention can be applied. Figure 1 In a production line for manufacturing a display panel of an organic EL display device for a smartphone, for example, the substrate 100 is sequentially conveyed to the film forming module 301 , and an organic EL film is formed on the substrate 100 .

[0062] In the film forming module 301, a plurality of film forming chambers 303a to 303d for performing film forming on the substrate 100 and a mask storage chamber 305 for storing masks before and after use are arranged around a conveying chamber 302 which is octagonal in shape when viewed from above. A conveying robot 302a for conveying the substrate 100 is arranged in the conveying chamber 302. The conveying robot 302a includes a hand for holding the substrate 100 and a multi-joint arm for moving the hand in a horizontal direction. In other words, the film forming module 301 is a group-type film forming unit in which a plurality of film forming chambers 303a to 303d are arranged in a manner surrounding the conveying robot 302a. It should be noted that in the following description, when the film forming chambers 303a to 303d are not specifically distinguished, they are sometimes referred to as the film forming chamber 303.

[0063] In the conveying direction (arrow direction) of the substrate 100, a buffer chamber 306, a swirl chamber 307, and a transfer chamber 308 (also called a passage chamber) are respectively arranged on the upstream and downstream sides of the film forming module 301. During the manufacturing process, each chamber is maintained in a vacuum state. Figure 1Only one film forming module 301 is shown in the figure, but the production line of this embodiment has a plurality of film forming modules 301, and the plurality of film forming modules 301 have a structure connected by a connecting device consisting of a buffer chamber 306, a swirl chamber 307, and a delivery chamber 308. It should be noted that the structure of the connecting device is not limited to this, and for example, it can also be composed of only the buffer chamber 306 or the delivery chamber 308.

[0064] The transfer robot 302a transfers the substrate 100 from the upstream delivery chamber 308 to the transfer chamber 302, transfers the substrate 100 between the film forming chambers 303, transfers the mask between the mask storage chamber 305 and the film forming chamber 303, and transfers the substrate 100 from the transfer chamber 302 to the downstream buffer chamber 306.

[0065] The buffer chamber 306 is a chamber for temporarily storing substrates 100 according to the operation status of the production line. The buffer chamber 306 is provided with: a substrate storage shelf (also called a box) of a multi-layer structure, which can store a plurality of substrates 100 in a horizontal state with the processed surface (film-forming surface) of the substrate 100 facing downward in the direction of gravity; and a lifting mechanism, which lifts and lowers the substrate storage shelf in order to align the layer of the substrate 100 sent in or out with the conveying position. In this way, a plurality of substrates 100 can be temporarily stored in the buffer chamber 306 and stay in the buffer chamber 306.

[0066] The swirling chamber 307 is provided with a device for changing the orientation of the substrate 100. In the present embodiment, the swirling chamber 307 rotates the orientation of the substrate 100 by 180 degrees by a conveying robot provided in the swirling chamber 307. The conveying robot provided in the swirling chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and delivers it to the delivery chamber 308, thereby exchanging the front end and the rear end in the conveying direction (arrow direction) of the substrate 100 in the buffer chamber 306 and the delivery chamber 308. Thus, the orientation of the substrate 100 when it is delivered to the film forming chamber 303 becomes the same orientation in each film forming module 301, so that the scanning direction of the film formed with respect to the substrate 100 and the orientation of the mask can be made consistent in each film forming module 301. By adopting the structure as described above, the orientation of the mask set in the mask storage chamber 305 in each film forming module 301 can be made consistent, which can simplify the management of the mask and improve the usability.

[0067] The delivery chamber 308 is a chamber for delivering the substrate 100 sent from the device of the swirl chamber 307 to the transfer robot 302a of the downstream film forming module 301. In this embodiment, as described later, the substrate 100 is aligned and the film thickness of the film formed on the substrate 100 is measured in the delivery chamber 308.

[0068] The control system of the production line includes a host device 300 that controls the entire production line as a host computer and control devices 14a to 14d, 309, 310, and 311 that control each structure, and they can communicate via a wired or wireless communication line 300a. The control devices 14a to 14d are provided corresponding to the film forming chambers 303a to 303d, and control the film forming device 1 described later. The control device 309 controls the conveying robot 302a. The control device 310 controls the conveying robot provided in the swirl chamber 307. The control device 311 controls the alignment mechanism 16 and the film thickness measuring unit 17 provided in the delivery chamber 308, which are described later. The host device 300 sends information related to the substrate 100, instructions such as conveying timing, etc. to each control device 14a to 14d, 309, 310, and 311, and each control device 14a to 14d, 309, 310, and 311 controls each structure based on the received instructions. In addition, in the following description, when the control devices 14a to 14d are not particularly distinguished, they may be referred to as the control device 14.

[0069] <Overview of Film Forming Apparatus>

[0070] Figure 2 1 is a schematic diagram of a film forming device 1 according to an embodiment of the present invention. The film forming device 1 is a device for forming a film of a vapor-deposited substance on a substrate 100, and a mask 101 is used to form a thin film of the vapor-deposited substance of a predetermined pattern. The material of the substrate 100 for film formation in the film forming device 1 can be appropriately selected from materials such as glass, resin, and metal, and preferably a material having a resin layer such as polyimide formed on glass. As the vapor-deposited material, there are organic materials, inorganic materials (metals, metal oxides, etc.) and the like. The film forming device 1 can be applied to manufacturing devices for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, organic photoelectric conversion elements (organic thin-film imaging elements), optical components, etc., and can be applied to manufacturing devices for manufacturing organic EL panels, etc. In the following description, an example of film formation by vacuum evaporation on the substrate 100 by the film forming device 1 is described, but the present invention is not limited thereto, and various film forming methods such as sputtering and CVD can be applied. It should be noted that in each figure, the arrow Z represents the up and down direction (gravity direction), and the arrows X and Y represent mutually orthogonal horizontal directions.

[0071] The film forming device 1 has a box-shaped vacuum chamber 3. The internal space 3a of the vacuum chamber 3 is maintained as a vacuum environment or an inert gas environment such as nitrogen. In the present embodiment, the vacuum chamber 3 is connected to a vacuum pump not shown in the figure. It should be noted that in this specification, "vacuum" refers to a state filled with a gas with a pressure lower than the atmospheric pressure, in other words, a reduced pressure state. A substrate support unit 6 that supports the substrate 100 in a horizontal posture, a mask stage 5 that supports the mask 101, a film forming unit 4, and a plate unit 9 are arranged in the internal space 3a of the vacuum chamber 3. The mask 101 is a metal mask having an opening pattern corresponding to the thin film pattern to be formed on the substrate 100, and is fixed on the mask stage 5. As the mask 101, a mask having a structure in which a mask foil with a thickness of about several μm to tens of μm is welded and fixed on a frame-shaped mask frame can be used. The material of the mask 101 is not particularly limited, but it is preferable to use a metal with a small thermal expansion coefficient such as an Invar alloy material. The film forming process is performed in a state where the substrate 100 is placed on the mask 101 and the substrate 100 and the mask 101 overlap each other.

[0072] The plate unit 9 includes a cooling plate 10 for cooling the substrate 100 during film formation and a magnet plate 11 for attracting the mask 101 by magnetic force to bring the substrate 100 and the mask 101 into close contact. The plate unit 9 is provided to be movable up and down in the Z direction by a lifting unit 13 including, for example, a ball screw mechanism.

[0073] The film forming unit 4 is composed of a heater, a baffle, a driving mechanism of an evaporation source, an evaporation rate monitor, etc., and is an evaporation source that evaporates the evaporation material onto the substrate 100. More specifically, in this embodiment, the film forming unit 4 is a linear evaporation source in which a plurality of nozzles (not shown) are arranged in the X direction and the evaporation material is discharged from each nozzle. The film forming unit 4 reciprocates in the Y direction (the direction away from the connection portion of the film forming chamber 303 and the conveying chamber 302) by an evaporation source moving mechanism (not shown).

[0074] The film forming apparatus 1 also includes an alignment device 2 for aligning the substrate 100 and the mask 101. In summary, the alignment device 2 detects alignment marks formed on the substrate 100 and the mask 101 using cameras 7 and 8, and adjusts the relative position of the substrate 100 and the mask 101 based on the detection result.

[0075] The alignment device 2 includes a substrate support unit 6 that supports the peripheral portion of the substrate 100. The substrate support unit 6 includes a pair of base portions 62 that are separated from each other in the X direction and extend in the Y direction, and a plurality of claw-shaped carrier portions 61 that protrude inward from the base portion 62. It should be noted that the carrier portion 61 is sometimes also referred to as a "receiving claw" or a "finger portion". The plurality of carrier portions 61 are arranged at intervals on each of the pair of base portions 62. The portion on the long side of the peripheral portion of the substrate 100 is placed on the carrier portion 61. The base portion 62 is suspended from the beam member 222 via a plurality of pillars 64.

[0076] By providing a pair of base parts 62 separately in the X direction and not forming a structure of the base part 62 on the short side of the substrate 100 as in the present embodiment, the interference between the conveying robot 302a and the base part 62 when the conveying robot 302a hands over the substrate to the loading part 61 can be suppressed. However, the base part 62 may also be a rectangular frame shape that surrounds the entire peripheral portion of the substrate 100. Thus, the efficiency of conveying and handing over the substrate 100 can be improved. In addition, the base part 62 may also be a rectangular frame shape with a cutout in part. By forming a rectangular frame shape with a cutout in part, the interference between the conveying robot 302a and the base part 62 when the conveying robot 302a hands over the substrate to the loading part 61 can be suppressed, and the efficiency of conveying and handing over the substrate 100 can be improved.

[0077] The substrate support unit 6 further includes a clamping unit 63. The clamping unit 63 includes a plurality of clamping portions 66. Each clamping portion 66 is provided corresponding to each placement portion 61, and the peripheral edge of the substrate 100 can be clamped and held by the clamping portion 66 and the placement portion 61. As a method of supporting the substrate 100, in addition to the method of clamping and holding the peripheral edge of the substrate 100 by the clamping portion 66 and the placement portion 61, a method of simply placing the substrate 100 on the placement portion 61 without providing the clamping portion 66 can also be adopted.

[0078] In addition, the alignment device 2 includes an adjustment unit 20 that adjusts the relative position of the substrate 100 supported at the peripheral portion by the substrate support unit 6 and the mask 101. The adjustment unit 20 displaces the substrate support unit 6 on the XY plane based on the detection results of the alignment marks provided on the substrate 100 and the mask 101 by the cameras 7 and 8, thereby adjusting the relative position of the substrate 100 with respect to the mask 101. In the present embodiment, the position of the mask 101 is fixed, and the relative position thereof is adjusted by displacing the substrate 100, but the mask 101 may be displaced to perform the adjustment, or both the substrate 100 and the mask 101 may be displaced.

[0079] In addition, the alignment device 2 includes a contact and separation unit 22 that moves the substrate support unit 6 upward and downward to bring the substrate 100 and the mask 101, whose peripheral portion is supported by the substrate support unit 6, closer and farther apart in the thickness direction (Z direction) of the substrate 100. In other words, the contact and separation unit 22 can bring the substrate 100 and the mask 101 closer in the overlapping direction. As the contact and separation unit 22, for example, an electric actuator using a ball screw mechanism may be used.

[0080] <Description of the Handover Room>

[0081] Figure 3 (A) is a cross-sectional view schematically showing the internal structure of the transfer chamber 308. Figure 3 (B) is a top view schematically showing the structure of the support unit 161. Figure 3 and the following Figures 5-6 8 to 9 show a coordinate system that is fixed relative to the delivery chamber 308 and that takes the conveying direction of the substrate 100 (the direction of the arrow in the figure) as the Y direction. That is, Figure 2 The XY direction and Figure 3 , 5 The XY directions of ~6 and 8~9 are not necessarily consistent.

[0082] The delivery chamber 308 is a chamber for delivering the substrate 100 introduced from the swirl chamber 307 to the transfer robot 302a of the downstream film forming module 301. In this embodiment, the delivery chamber 308 includes a chamber 3081 whose inner space 3081a is maintained as a vacuum environment, an alignment mechanism 16, and a film thickness measuring unit 17.

[0083] <<Control Device>>

[0084] First, the structure of the control device 311 which controls the alignment mechanism 16 and the film thickness measurement unit 17 provided in the delivery chamber 308 will be described. Figure 4 This is a block diagram showing a hardware configuration example of a device installed in the delivery room 308 and its control device 311. The control device 311 includes a processing unit 3111 (control means), a storage unit 3112, an input / output interface (I / O) 3113, and a communication unit 3114.

[0085] The processing unit 3111 is a processor represented by a CPU (Central Processing Unit), and executes the program stored in the storage unit 3112 to control the alignment mechanism 16. The storage unit 3112 is a storage device (storage component) such as ROM (Read Only Memory), RAM (Random Access Memory), HDD (Hard Disk Drive), etc., and stores various control information in addition to the program executed by the processing unit 3111. The I / O (Input / Output) 3113 is an interface for sending and receiving signals between the processing unit 3111 and external devices. The communication unit 3114 is a communication device that communicates with the upper device 300 via the communication line 300a. The processing unit 3111 receives information from the upper device 300 via the communication unit 3114, or sends information to the upper device 300. It should be noted that all or part of the control device 311 may also be composed of a PLC (Programmable Logic Controller), an ASIC (Application Specific Integrated Circuit), or an FPGA (Field Programmable Gate Array). The control device 311 controls the film thickness measuring unit 17. From a certain perspective, it can be said that the control device 311 and the film thickness measuring unit 17 constitute a film thickness measuring device for measuring the film thickness of the film formed on the substrate 100.

[0086] <<Alignment Mechanism>>

[0087] (summary)

[0088] The substrate 100 is transported to the delivery chamber 308 through the transport chamber 302, the buffer chamber 306, and the swirl chamber 307. Therefore, the substrate 100 may have a position deviation during its transport due to the accuracy of the position control of the transport robot used in the transport. If the substrate 100 is transported to the film forming chamber 303 on the downstream side in a state where such a deviation occurs, the alignment in the film forming chamber 303 may be affected. Therefore, in the present embodiment, after preliminary alignment is performed in the delivery chamber 308 by the alignment mechanism 16, the substrate 100 is transported to the film forming chamber 303. Thus, the influence of the position deviation caused by the transport of the substrate 100 on the alignment in the film forming chamber 303 is suppressed.

[0089] Reference Figure 3 (A)~ Figure 5 . Figure 516 is a diagram showing an overview of edge alignment, and is a diagram of the interior of the chamber 3081 viewed from the bottom. The alignment mechanism 16 performs edge alignment based on the position of the edge of the substrate 100. The alignment mechanism 16 includes a position adjustment mechanism 162 and a camera 163. In the present embodiment, the alignment mechanism 16 aligns the substrate 100 supported by the support unit 161.

[0090] The support unit 161 (substrate support member) supports any one of the plurality of substrates obtained by dividing a large substrate, and is sometimes referred to as a substrate stage. In the present embodiment, the substrate 100 transported from the vortex chamber 307 is supported. However, when the buffer chamber 306 and the vortex chamber 307 are not provided on the production line, the substrate 100 transported by the transport robot 302a on the upstream side may also be supported. The support unit 161 includes: a support portion 1611 that supports the substrate 100 in the internal space 3081a of the chamber 3081; and a shaft 1612 that connects the support portion 1611 to a position adjustment mechanism 162 of the alignment mechanism 16 provided outside the chamber 3081.

[0091] The support portion 1611 includes: a pair of frame members 1611a separately arranged in a direction (X direction) intersecting the conveying direction of the substrate 100; and a plurality of receiving claws 1611b extending inward from the frame member 1611a and receiving the substrate 100. The frame member 1611a is configured to include: a long strip portion extending in the conveying direction (Y direction) of the substrate 100; and portions extending from both ends of the long strip portion to the side of the other frame member 1611a (X direction). The receiving claws 1611b are respectively provided in the portion extending in the Y direction and the portion extending in the X direction of the frame member 1611a. The peripheral portion of the substrate 100 is supported by the plurality of receiving claws 1611b.

[0092] The shaft 1612 connects the support portion 1611 to the position adjustment mechanism 162 outside the chamber 3081 via an opening formed in the chamber 3081. The shaft 1612 is configured to be relatively movable relative to the chamber 3081 while maintaining the vacuum state in the chamber 3081 using a known technique such as a vacuum bellows. When edge alignment is performed by the alignment mechanism 16, the position of the support portion 1611 is adjusted via the shaft 1612 by the position adjustment mechanism 162.

[0093] The position adjustment mechanism 162 is a mechanism for adjusting the position of the substrate 100 supported by the support unit 161. In the present embodiment, the position adjustment mechanism 162 can adjust the position of the substrate 100 by moving the support unit 161 in the XY direction or rotating it around the Z axis to displace it in the XY plane. For example, the position adjustment mechanism 162 can also displace the support unit 161 in the XY plane by controlling the extension and contraction of one electric cylinder that can be displaced in the X direction and two electric cylinders that can be displaced in the Y direction and are separated in the X direction.

[0094] The camera 163 detects the edge of the substrate 100 supported by the support unit 161. In the present embodiment, two cameras 163 are provided in a manner capable of detecting the periphery of two corners on the diagonal line of the substrate 100. In the present embodiment, the camera 163 is provided outside the chamber 3081, and detects the edge of the substrate 100 via a transparent window provided on the bottom surface of the chamber 3081. In addition, in the present embodiment, the camera 163 is provided so as to be capable of detecting the reference mark 1651 provided inside the chamber 3081. It should be noted that the alignment mechanism 16 may either provide all structural components inside the chamber 3081, or provide at least a part of the structural elements outside the chamber 3081. In addition, in the present specification, the "edge" of the substrate refers to the entire end of the substrate, including not only the "side" but also the "corner".

[0095] (Edge alignment example)

[0096] An example of edge alignment performed by the alignment mechanism 16 is described. The detection range 163a of the camera 163 is set to the edge 1001 of the storage substrate 100 and the reference mark 1651 of the reference member 165 fixedly installed in the chamber 3081. In addition, the storage unit 3112 stores information that associates the coordinate system (camera coordinate system) within the detection range 163a with the coordinate system (world coordinate system) of the entire alignment mechanism 16.

[0097] When the substrate 100 is sent into the chamber 3081, the processing unit 3111 obtains the edge 1001 of the substrate 100 and the center positions C1 and C2 of the reference mark 1651, respectively, based on the captured image of the camera 163 and the information stored in the storage unit 3112. In the present embodiment, the center position C2 of the reference mark 1651 becomes the reference position of the center position C1 of the substrate 100. Next, the processing unit 3111 adjusts the position of the support unit 161 through the position adjustment mechanism 162 so that the center position C1 of the substrate 100 is consistent with the center position C2 of the reference mark 1651. Through the above processing, the edge alignment is completed. It should be noted that the processing unit 3111 can also calculate the angle of the substrate 100 in addition to the center position C1 based on the detection result of the camera 163. In addition, the processing unit 3111 can also rotate the substrate 100 around the Z axis through the position adjustment mechanism 162 so that the angle of the substrate 100 is consistent with the angle used as the reference.

[0098] <<Film thickness measurement department>>

[0099] (summary)

[0100] Reference Figure 3 (A)~ Figure 4 . The film thickness measuring unit 17 (measuring member) optically measures the film thickness of the film formed on the substrate 100 supported by the supporting unit 161 and located in the internal space 3081a. During the film formation of the film forming device 1 in the film forming chamber 303, control is performed by the above-mentioned evaporation rate monitor and the like so that the film thickness of the formed film becomes a target value. However, the evaporation rate monitor does not directly measure the thickness of the film formed on the substrate 100, but indirectly measures the film thickness through a quartz resonator arranged at a position different from the substrate 100. Therefore, due to various reasons such as the amount of material deposited on the quartz resonator and the temperature of the quartz resonator, sometimes the film thickness of the film deposited on the quartz resonator of the evaporation rate monitor is different from the film thickness of the film deposited on the substrate 100, or an error occurs in the measured value itself. This measurement error will cause a deviation in the film thickness of the film formed on the substrate 100, which may sometimes lead to a reduction in panel quality and a reduction in yield. Therefore, in this embodiment, the film thickness of the film formed on the substrate 100 in the film forming chamber 303 on the upstream side is optically measured in the delivery chamber 308. Thus, the film thickness of the film formed on the substrate 100 can be directly measured. In this embodiment, the film thickness measuring unit 17 includes a sensor unit 172 and an adjustment unit 173.

[0101] The sensor unit 172 is a sensor (optical sensor) for measuring the film thickness of the film formed on the substrate 100 supported by the support unit 161, and is a reflection spectroscopic film thickness meter. In the present embodiment, a plurality of sensor units 172 are provided corresponding to a plurality of measuring sheets 1005 described later. The sensor unit 172 includes a sensor head 1721, a light source 1722, and a spectrometer 1723. It should be noted that in the present embodiment, the sensor unit 172 is set as a reflection spectroscopic film thickness meter, but the type of the sensor unit 172 is not particularly limited as long as it is a film thickness meter for optically measuring the film thickness of the film formed on the substrate 100, and for example, it may also be a spectroscopic ellipsometer.

[0102] The sensor head 1721 collects the light from the substrate and guides the collected light to the spectrometer 1723, which is a photoelectric conversion element of this embodiment. The sensor head 1721 is provided, for example, at the lower part of the internal space 3081a of the chamber 3081, and is connected to the light source 1722 and the spectrometer 1723 via an optical fiber (not shown). The sensor head 1721 has a function of setting the irradiation area of ​​the light guided from the light source 1722 via the optical fiber, and optical components such as an optical fiber, a pinhole, and a lens can be used.

[0103] The light source 1722 is a device that outputs measurement light, and for example, a deuterium lamp, a xenon lamp, a halogen lamp, etc. are used. The light source 1722 can use light with a wavelength in the range of 200nm to 1μm, for example. The spectrometer 1723 (photoelectric conversion element) is a device that splits the reflected light input from the sensor head 1721 and measures the spectrum (intensity of each wavelength), and for example, it is composed of a spectrometer element (grating, prism, etc.) and a detector that performs photoelectric conversion. In this embodiment, the sensor head 1721, the light source 1722, and the spectrometer 1723 are integrally arranged inside the chamber 3081.

[0104] Here, the structure of the substrate 100 which is the detection target of the sensor unit 172 will be described. Figure 61 is a schematic diagram showing the structure of the substrate 100, and is a diagram of the substrate 100 supported by the support unit 161 as viewed from the bottom. A film-forming region 1003 for forming a display panel of an organic EL display device and a film thickness measurement region 1004 located at a position not overlapping with the film-forming region 1003 are provided on the substrate 100. In the present embodiment, the film thickness measurement region 1004 is provided at two locations (region 1004a, region 1004b) along the peripheral portion of the substrate 100. During the film forming process in each film forming chamber 303, film formation is also performed at a predetermined position in the film thickness measurement region 1004 in parallel with film formation in the film-forming region 1003, thereby forming a thin film for film thickness measurement (hereinafter referred to as a measurement sheet 1005) in the film thickness measurement region 1004. This can be easily formed by pre-forming an opening for the measurement sheet 1005 on the mask 101 used in each film forming chamber 303.

[0105] The film thickness measurement area 1004 is set to an area where a plurality of measuring sheets 1005 can be formed, and the formation position of the measuring sheet 1005 can be changed by the layer unit of the film thickness measurement object. That is, in the case where the film thickness of a film (a single film or a laminated film with a plurality of films laminated) formed in one film forming chamber is to be measured, only the film (a single film or a laminated film) formed in one film forming chamber can be formed in the part of the measuring sheet 1005, and in the case where the film thickness of a laminated film formed through a plurality of film forming chambers is to be measured, the laminated film identical to the laminated film to be measured can be formed in the part of the measuring sheet 1005. In this way, by making the measuring sheet 1005 different for each layer to be measured, the accurate measurement of the film thickness of each layer can be achieved. It should be noted that if a plurality of measuring sheets 1005 are formed when a layer is formed, the distribution of the film thickness of the layer on the substrate 100 (the deviation of the film thickness in the X direction or the Y direction) can also be measured.

[0106] In the present embodiment, a plurality of sensor units 172 are provided corresponding to the plurality of measurement sheets 1005. More specifically, the sensor units 172 are provided so that the sensor heads 1721 are located below the plurality of measurement sheets 1005, respectively.

[0107] The adjustment unit 173 is a unit for adjusting the relative position of the support unit 161 and the sensor unit 172. In the present embodiment, the relative position of the sensor unit 172 is adjusted by moving the sensor unit 172. For example, the adjustment unit 173 has: a vertical direction moving portion capable of moving the sensor head 1721 of the sensor unit 172 in the Z direction; and a horizontal direction moving portion capable of moving the sensor head 1721 in the XY direction (neither of which is shown in the figure). The vertical direction moving portion and the horizontal direction moving portion can apply well-known technologies such as electric cylinders. The adjustment unit 173 adjusts the distance between the substrate 100 supported by the support unit 161 and the sensor head 1721 through the vertical direction moving portion, and adjusts the relative position of the sensor head 1721 relative to the substrate 100 in a direction parallel to the film-forming surface of the substrate 100 (XY direction) through the horizontal direction moving portion.

[0108] In this embodiment, a plurality of sensor units 172 are provided corresponding to a plurality of measurement sheets 1005. Therefore, the adjustment unit 173 adjusts the relative position of each sensor unit 172 with respect to each measurement sheet 1005. For example, the adjustment unit 173 may independently adjust each sensor unit 172 in both the horizontal direction and the vertical direction. In addition, for example, the horizontal direction may be adjusted for a plurality of sensor units 172 in common, and the vertical direction may be adjusted for each sensor unit 172 independently.

[0109] It should be noted that the adjustment unit 173 may also be configured to be able to adjust the position of a local structure in the sensor unit 172. For example, when only the sensor head 1721 is provided in the internal space 3081a, and the light source 1722 and the spectrometer 1723 are provided outside the chamber 3081, the adjustment unit 173 may also be configured to be able to adjust the position of the sensor head 1721. The adjustment unit 173 only needs to be able to adjust the position of the light projecting portion and the light receiving portion of the sensor unit 172 relative to the substrate 100.

[0110] It should be noted that the film thickness measuring unit 17 may have all its components disposed inside the chamber 3081, or at least a portion of its components disposed outside the chamber 3081. For example, only the sensor head 1721 may be disposed inside the chamber 3081, and the light source 1722 and the spectrometer 1723 may be disposed outside the chamber 3081. Furthermore, the sensor head 1721 disposed inside the chamber 3081 and the light source 1722 and the spectrometer 1723 disposed outside the chamber 3081 may be connected by an optical fiber via an opening disposed in the chamber 3081.

[0111] (Example of film thickness measurement)

[0112] An example of film thickness measurement performed by the film thickness measuring unit 17 is described. After the edge alignment performed by the alignment mechanism 16 is completed, the processing unit 3111 performs film thickness measurement performed by the film thickness measuring unit 17. The processing unit 3111 causes the light source 1722 to output measurement light. The measurement light output from the light source 1722 is guided to the sensor head 1721 via the optical fiber, and is projected from the sensor head 1721 to the substrate 100. The projected light is reflected by the substrate 100 and input to the spectrometer 1723 from the sensor head 1721 via the optical fiber. At this time, the light reflected from the surface of the thin film on the substrate 100 and the light reflected from the interface between the thin film and its base layer interfere with each other. By being affected by the interference and absorption generated by the thin film, the reflection spectrum is affected by the optical path length difference, that is, the film thickness. The processing unit 3111 can measure the film thickness of the thin film by analyzing the reflection spectrum. For example, the processing unit 3111 can also control the adjustment unit 173 to scan the sensor unit 172 while performing the measurement, thereby confirming the deviation of the film thickness in the X direction or the Y direction.

[0113] For the film thickness evaluation of the above-mentioned reflection spectrometry, the evaluation of the organic film with a thickness of several nm to several 100 nm can be performed with high accuracy in a short time, and therefore, it can be used for the evaluation of the organic layer of the organic EL element. Here, as the material of the organic layer, hole transport materials such as αNPD: α-naphthylphenylbenzenediamine, light-emitting materials such as Ir(ppy)3: iridium-phenylpyrimidine complex, electron transport materials such as Alq3: tris(8-quinoline)aluminum, Liq: 8-hydroxyquinoline-lithium) can be listed. In addition, it can also be applied to mixed films of the above-mentioned organic materials.

[0114] <Explanation of Large Substrates and Cut Substrates>

[0115] Figure 7 1 is a diagram showing an example of a large substrate and a cut substrate. The substrate 100 of the present embodiment is a cut substrate cut from a large substrate. The large substrate MG is a sixth-generation full-size (approximately 1500 mm × approximately 1850 mm) mother glass having a rectangular shape. An orientation plane OF for determining the orientation of the large substrate MG is formed at a portion of the corners of the large substrate MG.

[0116] It should be noted that, here, an example is shown in which only one of the four corners of the large substrate MG is cut off to form the orientation plane OF, but the present invention is not limited thereto, and a configuration may be made such that, although all four corners are cut off, the orientation plane OF is formed by cutting off one corner larger than the other corners. In this case, the portion formed by cutting off a shape different from the other corners may be understood as the orientation plane OF.

[0117] As described above, for example, in the manufacture of an organic EL display for a smartphone, a backplane process (TFT formation process, anode formation process, etc.) performs film formation on a sixth-generation full-size large substrate MG. Thereafter, the large substrate MG is cut into half (cutting process), and the substrate 100 of the sixth-generation half-cut size (approximately 1500 mm × approximately 925 mm) obtained by cutting is fed to a film forming module 301 for forming an organic layer in the production line of this embodiment. The substrate 100 fed to the film forming module 301 is any one of the divided substrates obtained by cutting out from the large substrate MG, and in this embodiment, it is substrate 100A or substrate 100B. The large substrate MG is cut along a cutting line CTL at a position at a distance L from a reference edge serving as one side thereof, to obtain substrate 100A and substrate 100B. In the Figure 1 In the illustrated production line, substrates 100A and substrates 100B are mixed and conveyed as substrates 100 to undergo various processes.

[0118] It should be noted that, here, the large substrate MG is cut into half, but this is not limited to this, as long as the large substrate MG is cut into a plurality of substrates of substantially the same size. For example, the large substrate MG may be divided into four to form four substrates 100 , which are then fed into the film forming module 301 .

[0119] Here, sometimes the characteristics of substrates such as the size and rigidity distribution of substrates 100A and 100B are different. For example, substrate 100A is a substrate whose short side length is measured as L, but substrate 100B does not measure the length of the short side, and the length of the short side is sometimes different between substrate 100A and substrate 100B. The difference in the length of the short side sometimes has an impact when the film thickness of substrate 100 is measured in the delivery chamber 308. It is described in detail below.

[0120] Figure 8 1 is a diagram for explaining the effect of the difference in the length of the short side of the substrate 100 on the film thickness measurement. In this embodiment, the length of the short side of the substrate 100A is measured as L, so the center position based on the alignment mark 1002 used for alignment in the alignment device 2 is consistent with the center position based on the edge 1001 (center position C10). On the other hand, the length of the short side of the substrate 100B is not measured. Figure 8 In the example of , the length LB of the short side is longer than the length L. Therefore, a deviation of a distance c occurs between the center position C111 based on the alignment mark 1002 and the center position C112 based on the edge 1001 .

[0121] In the edge alignment in the alignment mechanism 16, alignment is performed so that the center position C10 or C112 calculated based on the position information of the plurality of edges 1001 is consistent with the center position of the reference mark 1651 as the reference position. Therefore, in the substrate 100A and the substrate 100B, there is a case where the center position based on the alignment mark 1002 is offset after the edge alignment. In addition, the film thickness measurement area 1004 is formed based on the position of the alignment mark 1002. In other words, the film thickness measurement area 1004 is set at a position where the distance from the alignment mark 1002 becomes a predetermined distance. Therefore, if the center position based on the alignment mark 1002 is offset, the position of the film thickness measurement area 1004 is sometimes offset in the substrate 100A and the substrate 100B. As a result, the actual measurement position of the film thickness measurement unit 17 is sometimes offset from the film thickness measurement area 1004 formed on the substrate 100, which becomes the main cause of the measurement error.

[0122] Furthermore, differences in characteristics such as rigidity distribution of the substrate 100 may also have an influence on the film thickness measurement. Fig. 9 (A) and (B) are diagrams for explaining the influence of the characteristic difference of the substrate 100 on the film thickness measurement. Fig. 9 (A) illustrates the downward deflection of the substrate 100 supported by the support unit 161. The substrate 100 supported at the periphery bends downward near the central portion due to its own weight. Depending on the difference in the characteristics of the substrate 100, the deflection amount H sometimes varies. When the deflection amount H changes, the distance d between the sensor unit 172 and the measurement position of the substrate 100 changes. When the distance d between the sensor unit 172 and the measurement position of the substrate 100 changes, the amount of reflected light from the substrate 100 changes greatly, and when the distance d increases, the amount of light decreases significantly. As a result, the result of the film thickness measurement may be affected. In addition, Fig. 9 (B) shows an example of Fig. 9 (A) For different substrates 100, the position where the deflection of the substrate 100 becomes the maximum. If the rigidity distribution of the substrate 100 is uniform, then relative to the width W0 of the substrate 100 (the X coordinate of the position of the long side of one side is set to 0, and the X coordinate of the position of the long side of the other side is set to W0), the position W1 where the deflection becomes the maximum is W1=1 / 2·W0, but if the rigidity distribution is biased, as in the example shown in the figure, W1≠1 / 2·W0. The difference in the position where the deflection becomes the maximum will also lead to a difference in the distance d between the sensor unit 172 and the measurement position of the substrate 100, which may affect the result of the film thickness measurement. In addition, when the deflection amount H or the position W1 where the deflection becomes the maximum changes, the inclination of the measurement area of ​​the substrate 100 relative to the sensor unit 172 changes. As a result, the result of the film thickness measurement may be affected.

[0123] In addition, in the present embodiment, there is an orientation plane OF on the substrate 100B, but there is no orientation plane OF on the substrate 100A. The magnitude of the residual stress on the cut surface is sometimes different between the substrate 100A and the substrate 100B. In addition, the position of the cut surface is the right side in the substrate 100A and the left side in the substrate 100B, and the position is different. Due to such differences in the characteristics of the substrates, the bending mode of the substrate 100 when supported by the support unit 161 is different, which sometimes affects the result of the film thickness measurement.

[0124] Therefore, in the present embodiment, as described below, control of the film thickness measuring unit is performed according to the portion of the large substrate MG from which the substrate 100 is cut out.

[0125] <Control Example>

[0126] An example of control of the film thickness measuring unit 17 executed by the processing unit 3111 of the control device 311 will be described. Fig.10 (A) is a flowchart showing an example of processing by the processing unit 3111. This flowchart starts, for example, when the processing unit 3111 receives an instruction to perform film thickness measurement from the host device 300. It should be noted that, as described above, in this embodiment, the edge alignment performed by the alignment mechanism 16 is completed at the moment when the processing unit 3111 receives an instruction to perform film thickness measurement from the host device 300.

[0127] In step S1 (hereinafter referred to as S1. The same applies to other steps), the processing unit 3111 obtains substrate information of the substrate 100 supported by the supporting unit 161 (acquisition process). In the present embodiment, the substrate information includes information related to the relative position of the substrate 100 in the large substrate MG before being divided. In other words, the information is position information related to the portion of the large substrate MG from which the substrate 100 is cut out, and may also be referred to as "cutting information" or "cutting information". In this way, the processing unit 3111 has a function as an acquisition component for obtaining information related to the portion of the substrate 100 in the large substrate MG before being divided. In the present embodiment, in Figure 7 In the figure, the substrate 100A corresponding to the portion on the left side of the cutting line CTL of the large substrate MG and whose cutting position is on the right side of the drawing is set as A-cut, and the substrate 100B corresponding to the portion on the right side of the cutting line CTL of the large substrate MG and whose cutting position is on the left side of the drawing is set as B-cut. The processing unit 3111 obtains whether the substrate 100 supported by the support unit 161 is A-cut or B-cut as the portion information.

[0128] In addition, in the present embodiment, the substrate information is managed by the host device 300 in association with other information of the substrate 100. The host device 300 stores the identification information for identifying each substrate 100 and the location information of the substrate 100 (substrate 100A or substrate 100B) in correspondence. Moreover, when the host device 300 instructs the processing unit 3111 to perform the film thickness measurement of the substrate 100, the identification information and the location information are sent to the processing unit 3111. That is, in S1, the processing unit 3111 receives information related to the substrate 100 from the host device 300 via the communication unit 3114, thereby obtaining the substrate information. It should be noted that the host device 300 can obtain the substrate information from, for example, a cutting device (substrate dividing device) that cuts off a large substrate MG, other devices arranged on the production line at an upstream side of the film forming device 1, or a device outside the production line, or can accept the input of the operator of the production line and obtain the substrate information through the input of the operator.

[0129] In S2, the processing unit 3111 determines the measurement conditions (measurement condition determination step). More specifically, the processing unit 3111 determines the measurement conditions of the film thickness measurement unit 17 based on the substrate information acquired in S1. Thus, the measurement method of the film thickness measurement unit 17 is changed.

[0130] As examples of the measurement conditions of the film thickness measuring unit 17, for example, the relative position of the sensor unit 172 with respect to the substrate 100 supported by the support unit 161, the conditions related to the light source 1722, etc. can be listed. The relative position of the sensor unit 172 with respect to the substrate 100 can also be the distance between the substrate 100 and the sensor unit 172 and / or the positional relationship in the direction parallel to the substrate 100 supported by the support unit 161 (XY direction). In addition, the conditions related to the light source 1722 can also be, for example, the intensity of the measurement light output by the light source 1722, the irradiation angle of the measurement light, etc. That is, the processing unit 3111 can also make the adjustment unit 173 adjust the relative position of the substrate 100 and the sensor unit 172, or update the set value of the intensity of the measurement light output by the light source 1722 based on the substrate information.

[0131] In S3, the processing unit 3111 executes the measurement operation. Specifically, the processing unit 3111 executes the measurement operation described in the above (film thickness measurement) using the measurement method changed in S2.

[0132] Fig.10 (B) is a flowchart showing an example of processing by the processing unit 3111, showing a specific example of the processing of S2. Fig.10 (B) shows an example in which the relative position of the substrate 100 and the sensor unit 172 is changed based on the substrate information, which is one of the measurement methods of the film thickness measurement unit 17 .

[0133] In S21 , the processing unit 3111 checks the substrate information acquired in S1 , and proceeds to S22 if it is A-cut, and proceeds to S23 if it is B-cut. In S22 , the processing unit 3111 acquires the adjustment amount of the adjustment unit 173 . Fig.11 31 is a diagram showing an example of information stored in the storage unit 3112. In the present embodiment, the storage unit 3112 stores the substrate information in a relationship with the adjustment amount by which the adjustment unit 173 adjusts the relative position of the substrate 100 and the sensor unit 172. The processing unit 3111 obtains the adjustment amount corresponding to the A cut (X=x1, Y=y1, Z=z1). On the other hand, when entering S23, the processing unit 3111 obtains the adjustment amount corresponding to the B cut (X=x2, Y=y2, Z=z2).

[0134] If used Figure 8 Taking the example of , after edge alignment, the center position C111 of the alignment mark 1002 based on the substrate 100B is offset by a distance c in the -X direction compared to the center position C10 of the alignment mark 002 based on the substrate 100A. Therefore, in the case of B cutting, the position of the sensor unit 172 after adjustment is offset by -c compared to the position of the sensor unit 172 after adjustment in the case of A cutting, and the X component of the adjustment amount relative to each substrate information is set. In addition, Figure 8 In the example of FIG. 1 , the lengths of the long sides of the substrate 100A and the substrate 100B are the same, so the Y components of the adjustment amounts for each substrate information may be the same (including the case where both are 0). In addition, the Z component of the adjustment amount may also be set based on the tendency of the bending of each cut, etc. These adjustment amounts can be set by prior testing, etc.

[0135] In S24, the processing unit 3111 controls the adjustment unit 173 based on the adjustment amount acquired in S22 or S23. Thus, the relative position of the substrate 100 and the sensor unit 172 is changed when the substrate 100 is A-cut or B-cut.

[0136] As described above, in the present embodiment, the processing unit 3111 controls the film thickness measuring unit 17 based on the substrate information of the substrate 100 to change the measuring method of the film thickness measuring unit 17. Thus, it is possible to suppress the reduction in the measurement accuracy of the film thickness of the substrate cut out from the large substrate. Further, in the present embodiment, the film thickness of the substrates 100A and 100B cut out from the large substrate MG is measured in different measuring methods based on the substrate information. Thus, for the substrates 100 cut out from different locations, the film thickness measurement can be performed in consideration of the size of the substrate, the tendency of bending, etc. caused by the difference in characteristics.

[0137] In addition, in the present embodiment, in the substrates 100A and 100B, the measurement method of the film thickness measuring unit 17 is changed so as to suppress the deviation between the film thickness measurement region 1004 of the substrate 100 and the measurement position of the sensor unit 172 caused by edge alignment. This can suppress the influence of the characteristic difference of the substrate cut out from the large substrate on the film thickness measurement.

[0138] It should be noted that, in this embodiment, Fig.11 As shown in FIG. 1 , an adjustment amount from the reference position to be adjusted by the adjustment unit 173 is set with respect to the substrate information. However, the adjustment amount to be adjusted by the adjustment unit 173 may be set for each of the plurality of sensor units 172 with respect to the substrate information. Fig. 9 As shown in (A), the distance d between the sensor unit 172 and the substrate 100 tends to become smaller near the center of the substrate 100 due to the influence of the bending of the substrate 100. Therefore, the adjustment amount adjusted by the adjustment unit 173 can be set so that the sensor unit 172 that measures near the center of the base 100 is located further downward in the Z direction.

[0139] <Method for manufacturing electronic device>

[0140] Next, an example of a method for manufacturing an electronic device is described. Hereinafter, the structure and manufacturing method of an organic EL display device are illustrated as an example of an electronic device. In this example, Figure 1 The film forming modules 301 shown as an example are provided at, for example, three locations in the production line.

[0141] First, the manufactured organic EL display device will be described. Fig.12 (A) is an overall view of an organic EL display device 50. Fig.12 (B) is a diagram showing a cross-sectional structure of one pixel.

[0142] like Fig.12 As shown in (A), a plurality of pixels 52 including a plurality of light emitting elements are arranged in a matrix in a display area 51 of an organic EL display device 50. Each light emitting element has a structure including an organic layer sandwiched by a pair of electrodes, and the details will be described later.

[0143] It should be noted that the pixel referred to here refers to the smallest unit that can display the desired color in the display area 51. In the case of a color organic EL display device, the pixel 52 is formed by a combination of multiple sub-pixels of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that show different light emission from each other. Most of the pixels 52 are composed of a combination of three sub-pixels, namely a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but are not limited to this. The pixel 52 only needs to include at least one sub-pixel, preferably includes two or more sub-pixels, and more preferably includes three or more sub-pixels. As the sub-pixels constituting the pixel 52, for example, it can also be a combination of four sub-pixels, namely a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0144] Fig.12 (B) Yes Fig.12 (A) is a partial cross-sectional schematic diagram at the AB line. The pixel 52 has a plurality of sub-pixels composed of organic EL elements, and the organic EL element has a first electrode (anode) 54, a hole transport layer 55, any one of the red layer 56R / green layer 56G / blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58 on a substrate 53. Among them, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 are equivalent to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed into patterns corresponding to light-emitting elements (sometimes also referred to as organic EL elements) that emit red light, green light, and blue light, respectively.

[0145] In addition, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed together over the plurality of light-emitting elements 52R, 52G, and 52B, or may be formed for each light-emitting element. Fig.12 As shown in (B), after the hole transport layer 55 is formed as a common layer in multiple sub-pixel areas, the red layer 56R, the green layer 56G, and the blue layer 56B are formed separately according to each sub-pixel area, and then the electron transport layer 57 and the second electrode 58 are formed as a common layer thereon in multiple sub-pixel areas.

[0146] In order to prevent short circuits between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0147] exist Fig.12In (B), the hole transport layer 55 and the electron transport layer 57 are shown as one layer, but according to the structure of the organic EL display element, they can also be formed by multiple layers having a hole blocking layer and an electron blocking layer. In addition, a hole injection layer can be formed between the first electrode 54 and the hole transport layer 55, and the hole injection layer has an energy band structure that can smoothly inject holes from the first electrode 54 to the hole transport layer 55. Similarly, an electron injection layer can also be formed between the second electrode 58 and the electron transport layer 57.

[0148] Each of the red layer 56R, the green layer 56G, and the blue layer 56B can be formed by a single light-emitting layer or by stacking multiple layers. For example, the red layer 56R can be composed of two layers, with the red light-emitting layer forming the upper layer and the hole transport layer or the electron blocking layer forming the lower layer. Alternatively, the lower layer can be formed by the red light-emitting layer and the upper layer can be formed by the electron transport layer or the hole blocking layer. By providing a layer on the lower side or the upper side of the light-emitting layer in this way, the light-emitting position in the light-emitting layer is adjusted, and the optical path length is adjusted, thereby having the effect of improving the color purity of the light-emitting element.

[0149] It should be noted that, although the example of the red layer 56R is shown here, the same structure can also be used in the green layer 56G and the blue layer 56B. In addition, the number of stacked layers can also be two or more. Moreover, layers of different materials can be stacked, such as the light-emitting layer and the electron blocking layer, or layers of the same material can be stacked, such as stacking two or more light-emitting layers.

[0150] Next, an example of a method for manufacturing an organic EL display device is specifically described. Here, it is assumed that the red layer 56R is composed of two layers, the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

[0151] First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. It should be noted that the material of the substrate 53 is not particularly limited, and it can be made of glass, plastic, metal, etc. In this embodiment, as the substrate 53, a substrate in which a polyimide film is laminated on a glass substrate is used.

[0152] On the substrate 53 formed with the first electrode 54, a resin layer such as acrylic acid or polyimide is applied by bar coating or spin coating, and the resin layer is patterned by photolithography so as to form an opening in the portion where the first electrode 54 is formed, thereby forming an insulating layer 59. The opening corresponds to the light-emitting region where the light-emitting element actually emits light. It should be noted that in this embodiment, the large substrate is processed before the insulating layer 59 is formed, and a dividing step of dividing the substrate 53 is performed after the insulating layer 59 is formed.

[0153] The substrate 53 with the insulating layer 59 patterned thereon is introduced into the first film forming chamber 303, and the hole transport layer 55 is formed as a common layer on the first electrode 54 in the display region. The hole transport layer 55 is formed using a mask having an opening formed in each display region 51 of the panel portion of an organic EL display device.

[0154] Next, the substrate 53 formed up to the hole transport layer 55 is sent to the second film forming chamber 303. The substrate 53 and the mask are aligned, the substrate is placed on the mask, and the red layer 56R is formed on the portion of the substrate 53 on the hole transport layer 55 where the element emitting red light is arranged (the region forming the red sub-pixel). Here, the mask used in the second film forming chamber is a high-precision mask having openings formed only in the multiple regions on the substrate 53 that become the sub-pixels of the organic EL display device, which are the multiple regions that become the red sub-pixels. Thus, the red layer 56R including the red light-emitting layer is formed only in the region that becomes the red sub-pixel among the regions on the substrate 53 that become the multiple sub-pixels. In other words, the red layer 56R is not formed in the region that becomes the blue sub-pixel and the region that becomes the green sub-pixel among the regions on the substrate 53 that become the multiple sub-pixels, but is selectively formed in the region that becomes the red sub-pixel.

[0155] Similar to the formation of the red layer 56R, the green layer 56G is formed in the third film forming chamber 303, and the blue layer 56B is further formed in the fourth film forming chamber 303. After the formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed in the entire display area 51 in the fifth film forming chamber 303. The electron transport layer 57 is formed as a common layer in the three color layers 56R, 56G, and 56B.

[0156] The substrate formed up to the electron transport layer 57 is moved to the sixth film forming chamber 303 to form the second electrode 58. In the present embodiment, the film formation of each layer is performed by vacuum evaporation in the first film forming chamber 303 to the sixth film forming chamber 303. However, the present invention is not limited to this, for example, the film formation of the second electrode 58 in the sixth film forming chamber 303 can also be performed by sputtering. Thereafter, the substrate formed up to the second electrode 58 is moved to a sealing device, and a protective layer 60 is formed by plasma CVD (sealing process), and the organic EL display device 50 is completed. It should be noted that, here, the protective layer 60 is formed by the CVD method, but it is not limited to this, and it can also be formed by the ALD method or the inkjet method.

[0157] Here, the film formation in the first film forming chamber 303 to the sixth film forming chamber 303 is performed using a mask having openings corresponding to the patterns of the respective layers to be formed. When forming the film, after the relative position adjustment (alignment) of the substrate 53 and the mask is performed, the substrate 53 is placed on the mask to form the film. Here, the alignment process performed in each film forming chamber is performed as in the above-mentioned alignment process.

[0158] <Other Implementation Methods>

[0159] In the above-described embodiment, the storage unit 3112 stores the substrate information and the adjustment of the adjustment unit 173 in association with each other. However, the host device 300 may manage these information collectively.

[0160] In addition, in the above-mentioned embodiment, the processing unit 3111 obtains the substrate information from the host device 300 through communication (step S1). However, the processing unit 3111 may obtain the substrate information in other ways. For example, the camera 163 or a camera separately provided in the delivery room 308 may detect the presence or absence of the orientation plane OF, and the processing unit 3111 may obtain the substrate information based on the detection result. In addition, for example, a code indicating the substrate information may be given to each substrate 100 in advance, and the processing unit 3111 may obtain the substrate information by reading the code.

[0161] In addition, in the above-mentioned embodiment, the substrate information is managed by the host device 300 in association with the identification information of the substrate 100, but the substrate information may be included in the identification information of the substrate 100 itself. For example, a part representing the substrate information may be included in the character string constituting the identification information. In this case, the processing unit 3111 can obtain the substrate information based on the identification information of the substrate 100 received from the host device 300.

[0162] In addition, in the above-mentioned embodiment, a plurality of sensor units 172 are provided corresponding to a plurality of measurement sheets 1005, and one or more sensor units 172, which are less in number than the measurement sheets 1005, may be moved below each measurement sheet 1005 to perform measurement. For example, when each measurement sheet 1005 is measured while one sensor unit 172 is moved in the XY direction, the storage unit 3112 may store the reference position of the sensor unit 172 for each measurement sheet 1005 and the adjustment amount from the reference position for each substrate information. The processing unit 3111 may control the position of the sensor unit 172 based on the acquired substrate information and the information stored in the storage unit 3112.

[0163] In addition, in the above-mentioned embodiment, the relative position of the substrate 100 and the sensor unit 172 is adjusted by the adjustment unit 173. That is, their relative positions are adjusted by moving the sensor unit 172. However, the position of the support unit 161 side of the support substrate 100 may also be adjusted. In this case, the processing unit 3111 may also control the position adjustment mechanism 162 to adjust the position of the support unit 161. That is, the position adjustment mechanism 162 may also function as an adjustment unit of the film thickness measuring unit 17. In addition, a mechanism for moving the support unit 161 during film thickness measurement may also be provided independently of the position adjustment mechanism 162. Alternatively, the adjustment unit 173 may also be configured to enable a plurality of sensor units 172 to be independently moved only in the Z direction, and the relative positions in the XY directions are adjusted by the position adjustment mechanism 162, and the relative positions in the Z direction are adjusted by the adjustment unit 173.

[0164] The present invention can also be implemented by providing a program that implements one or more functions of the above-mentioned embodiments to a system or device via a network or storage medium, and one or more processors in a computer of the system or device read and execute the processing of the program. In addition, it can also be implemented by a circuit (such as an ASIC) that implements one or more functions.

[0165] The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are added to disclose the scope of the invention.

Claims

1. A film thickness measuring device, comprising: a substrate support member for supporting any one of a plurality of substrates obtained by dividing a large substrate; a measuring member that optically measures a film thickness of a film formed on the substrate supported by the substrate supporting member; as well as a control member, the control member controlling the measuring member, It is characterized in that The film thickness measuring device includes an acquisition unit that acquires substrate information related to a portion of the substrate supported by the substrate support member before being divided in the large substrate. The control means determines a measurement condition of the measurement means based on the substrate information acquired by the acquisition means.

2. The film thickness measuring device according to claim 1, characterized in that: The substrate supporting member supports a periphery of the substrate.

3. The film thickness measuring device according to claim 1, characterized in that: The film thickness measuring device further comprises: an edge detecting member that detects an edge of the substrate supported by the substrate supporting member; and a position adjusting member for adjusting the position of the substrate supported by the substrate supporting member based on the detection result of the edge detecting member, The measurement performed by the measuring member is performed on a region that is a predetermined distance from an alignment mark formed on the substrate. The measurement by the measuring means is performed after the position of the substrate is adjusted by the position adjusting means.

4. The film thickness measuring device according to claim 1, characterized in that: The measurement conditions include a relative positional relationship between the substrate supporting member and the measurement member.

5. The film thickness measuring device according to claim 4, characterized in that: The measuring member comprises: Photoelectric conversion element; a sensor head that receives light from the substrate and guides the light to the photoelectric conversion element; and an adjustment unit that moves at least one of the substrate support member and the sensor head to adjust a relative position of the substrate supported by the substrate support member and the sensor head, The control member determines a relative positional relationship of the sensor head with respect to the substrate supported by the substrate support member based on the substrate information.

6. The film thickness measuring device according to claim 5, characterized in that: The adjustment unit moves the sensor head to adjust a relative position between the substrate supported by the substrate support member and the sensor head.

7. The film thickness measuring device according to claim 5, characterized in that: The relative positional relationship includes a distance between the substrate supported by the substrate supporting member and the sensor head.

8. The film thickness measuring device according to claim 5, characterized in that: The relative positional relationship includes a positional relationship between the substrate supported by the substrate supporting member and the sensor head in a direction parallel to a film formation surface of the substrate supported by the substrate supporting member.

9. The film thickness measuring device according to claim 1, characterized in that: The measuring member includes a plurality of sensor units for optically measuring the film thickness of the substrate. The control means determines measurement conditions of each of the plurality of sensor units based on the substrate information acquired by the acquisition means.

10. The film thickness measuring device according to claim 1, wherein: The measuring member includes a light source for outputting measuring light. The measurement conditions include conditions related to the measurement light output from the light source.

11. The film thickness measuring device according to claim 10, characterized in that: The condition related to the measurement light output from the light source includes the illuminance of the measurement light.

12. The film thickness measuring device according to claim 1, characterized in that: The substrate information is included in identification information for identifying the substrate.

13. The film thickness measuring device according to claim 1, characterized in that: The measuring member is disposed in a delivery chamber for delivering the substrate sent out from an external device to another external device different from the external device.

14. A film thickness measuring device, comprising: a substrate support member for supporting any one of a plurality of substrates obtained by dividing a large substrate; a measuring member that optically measures a film thickness of a film formed on the substrate supported by the substrate supporting member; as well as a control member, the control member controlling the measuring member, It is characterized in that The film thickness measuring device includes an acquisition unit that acquires substrate information related to a portion of the substrate supported by the substrate support member before being divided in the large substrate. The measuring means measures the film thickness under different measuring conditions according to the substrate information acquired by the acquiring means.

15. The film thickness measuring device according to claim 14, characterized in that: The substrate supporting member supports a periphery of the substrate.

16. The film thickness measuring device according to claim 14, characterized in that: The film thickness measuring device further comprises: an edge detecting member that detects an edge of the substrate supported by the substrate supporting member; and a position adjusting member for adjusting the position of the substrate supported by the substrate supporting member based on the detection result of the edge detecting member, The measurement performed by the measuring member is performed on a region that is a predetermined distance from an alignment mark formed on the substrate. The measurement by the measuring means is performed after the position of the substrate is adjusted by the position adjusting means.

17. The film thickness measuring device according to claim 14, characterized in that: The measurement conditions include a relative positional relationship between the substrate supporting member and the measurement member.

18. The film thickness measuring device according to claim 17, characterized in that: The measuring member comprises: Photoelectric conversion element; a sensor head that receives light from the substrate and guides the light to the photoelectric conversion element; and an adjustment unit that moves at least one of the substrate support member and the sensor head to adjust a relative position of the substrate supported by the substrate support member and the sensor head, The control member determines a relative positional relationship of the sensor head with respect to the substrate supported by the substrate support member based on the substrate information.

19. The film thickness measuring device according to claim 18, characterized in that: The adjustment unit moves the sensor head to adjust a relative position between the substrate supported by the substrate support member and the sensor head.

20. The film thickness measuring device according to claim 18, wherein: The relative positional relationship includes a distance between the substrate supported by the substrate supporting member and the sensor head.

21. The film thickness measuring device according to claim 18, characterized in that: The relative positional relationship includes a positional relationship between the substrate supported by the substrate supporting member and the sensor head in a direction parallel to a film formation surface of the substrate supported by the substrate supporting member.

22. The film thickness measuring device according to claim 14, characterized in that: The measuring member includes a plurality of sensor units for optically measuring the film thickness of the substrate. The control means determines measurement conditions of each of the plurality of sensor units based on the substrate information acquired by the acquisition means.

23. The film thickness measuring device according to claim 14, characterized in that: The measuring member includes a light source for outputting measuring light. The measurement conditions include conditions related to the measurement light output from the light source.

24. The film thickness measuring device according to claim 23, characterized in that: The condition related to the measurement light output from the light source includes the illuminance of the measurement light.

25. The film thickness measuring device according to claim 14, characterized in that: The substrate information is included in identification information for identifying the substrate.

26. The film thickness measuring device according to claim 14, characterized in that: The measuring member is disposed in a delivery chamber for delivering the substrate sent out from an external device to another external device different from the external device.

27. A film forming device, comprising: a film forming member that forms a film on a substrate; and a film thickness measuring device for measuring the film thickness of a film formed on the substrate by the film forming member, It is characterized in that The film thickness measuring device is the film thickness measuring device according to any one of claims 1 to 26.

28. A film thickness measuring method, comprising a supporting step and a measuring step, wherein in the supporting step, any one of a plurality of substrates obtained by dividing a large substrate is supported, and in the measuring step, the film thickness of a film formed on the substrate supported in the supporting step is optically measured, It is characterized in that The film thickness measurement method comprises: an acquisition step of acquiring substrate information related to a portion of the substrate to be measured before being divided in the large substrate; and A determination step in which measurement conditions in the measurement step are determined based on the substrate information acquired in the acquisition step.

29. A film thickness measuring method, comprising a supporting step and a measuring step, wherein in the supporting step, any one of a plurality of substrates obtained by dividing a large substrate is supported, and in the measuring step, the film thickness of a film formed on the substrate supported by the supporting step is optically measured, It is characterized in that The film thickness measurement method comprises an acquisition step, in which substrate information related to a portion of the large substrate before the substrate to be measured is acquired. In the measuring step, the film thickness is measured under different measuring conditions according to the acquired substrate information.

30. A method for manufacturing an electronic device, characterized in that: The method for manufacturing the electronic device comprises: a film forming step of forming a film on a substrate; and A film thickness measuring step, in which the film thickness of the film formed on the substrate in the film forming step is measured using the film thickness measuring method according to claim 28 or 29.

31. A storage medium, computer readable, characterized in that: The storage medium stores a program for causing a computer to execute each step of the film thickness measuring method according to claim 28 or 29.

Images