Multiple substrate processing systems

Abstract

The vacuum processing module has a pre-formed top plate and / or a bottom formed to be an outward protrusion. The shape of the top plate and / or the processing module offsets deformation caused by vacuum pressure and / or high temperature when processing substrates in the processing module. The processing module has a side that is accessible to the transfer chamber and a side opposite the openable side. The protrusion can be asymmetrical, with the peak of the protrusion eccentric on the top plate and closer to the opposite side than the openable side. A rigid structure can be mounted on the top plate to adjust the size of the protrusion in the top plate. The beam can be a rigid beam having an adjustable lifting mechanism to lift the attached portion of the top plate. The processing module can accommodate multiple substrates for processing, each substrate occupying a dedicated table in the processing module.

Description

Technical Field

[0001] The present application relates to substrate processing systems, and more particularly, to substrate processing modules in which substrates are processed. Background Art

[0002] Manufacturing semiconductor devices, such as in integrated circuit manufacturing, typically involves subjecting a substrate (e.g., a semiconductor wafer) to numerous processes, such as polishing, deposition, etching, photolithography, and thermal processing. Due to stringent requirements for the quality of the processing results, these various processes are sometimes performed in dedicated chambers configured to process a single substrate at a time. To increase processing throughput and reduce processing costs, processing modules have been developed that accommodate multiple substrates and process them in parallel. Each substrate desirably has a similar and uniform local environment within the processing module to provide uniform processing results across substrates.

[0003] Therefore, there is an ongoing need for a substrate processing system that provides a uniform local environment for substrate processing. Summary of the Invention

[0004] In some embodiments, a process module for processing a substrate includes a plurality of stages, each configured to receive a substrate, and a housing enclosing the stages, the housing including a bottom, a top plate, and sidewalls extending from the bottom to the top plate. As can be seen from a cross-sectional side view, the top plate is shaped to define an upwardly extending protrusion.

[0005] In some embodiments, the housing further comprises a rigid structure disposed on and spanning the top plate, the rigid structure comprising a lifting mechanism attached to the top plate for maintaining the upward extension of the protrusion.

[0006] In some embodiments, the lifting mechanism is adjustable to adjust the height of the protrusion. The lifting mechanism may include a threaded rod attached to a corresponding threaded portion of the top plate, wherein the height of the apex of the protrusion is adjustable by relative rotation of the rod and the corresponding threaded portion of the top plate.

[0007] In some embodiments, the rigid structure comprises a rigid beam.

[0008] In some embodiments, the top plate is a cover assembly comprising a plurality of covers corresponding to the plurality of stages, and wherein the rigid structure extends between pairs of covers.

[0009] In some embodiments, a plurality of covers are disposed on corresponding stages of the stages, wherein the covers are not parallel to the corresponding stages. The total number of stages and the number of covers can both be four, wherein the stages and covers are arranged in a 2×2 matrix. The apex of the protrusions protrudes within a range of 0.2 mm to 4 mm higher than the periphery of the top plate.

[0010] In some embodiments, the bottom of the housing extends outward to form a convex shape.

[0011] In some embodiments, a process module for processing a substrate includes one or more stages, each configured to receive a substrate; a housing enclosing the one or more stages, the housing including a bottom, a top plate, and sidewalls extending from the bottom to a lid assembly; and a rigid structure disposed above the top plate. The rigid structure includes an adjustable lift mechanism attached to the top plate for changing the shape of the top plate.

[0012] In some embodiments, the rigid structure includes a beam extending above and across the top plate. In some embodiments, the lifting mechanism includes an external thread and an internal thread, the internal thread configured to couple with and rotatable relative to the external thread. One of the external thread and the internal thread is attached to the rigid structure, and the other of the external thread and the internal thread is attached to the top plate.

[0013] In some embodiments, the number of stages and the number of covers are four, and both the stages and the covers are arranged in a 2×2 matrix, with the rigid structure disposed between two rows of two covers.

[0014] In some embodiments, the lifting mechanism is attached to the top plate at an off-center point of the top plate as seen in a top view.

[0015] In some embodiments, a semiconductor processing system includes a transfer chamber and one or more processing modules attached to the transfer chamber. The one or more processing modules include a plurality of stages, each configured to accommodate a substrate, and a housing enclosing the one or more stages. The housing includes a bottom, a top plate, a door providing access to the transfer chamber, and a sidewall extending from the bottom to the top plate, opposite the door. As can be seen in the cross-sectional side view, the top plate has a convex shape. The convex shape has an apex that is closer to the sidewall opposite the door than to the openable door.

[0016] In some embodiments, each stage has a corresponding cover, wherein the top plate is the cover assembly, and when substrates are processed on the stages, the convex shape can change to a flat shape in which the cover is parallel to the corresponding stage.

[0017] In some embodiments, the processing module further comprises a rigid structure having a lifting mechanism for adjusting the shape of the top plate. The lifting mechanism comprises an external thread and an internal thread, the internal thread being configured to couple with and rotatable relative to the external thread. One of the external thread and the internal thread is attached to the rigid structure, and the other of the external thread and the internal thread is attached to the top plate.

[0018] In some embodiments, a method for processing a semiconductor substrate includes providing a semiconductor processing module, determining one or both of a process temperature and a process pressure of a semiconductor process, and adjusting a shape of a top plate using a lifting mechanism based on one or both of the process temperature and the process pressure. The semiconductor processing module includes a housing enclosing a plurality of stages, the plurality of stages being configured to accommodate a plurality of semiconductor substrates for processing, and a rigid structure disposed above the top plate. The rigid structure includes an adjustable lifting mechanism attached to the top plate for changing the shape of the top plate. The housing includes a bottom, a top plate, and sidewalls extending from the bottom to the top plate. A lid assembly includes a plurality of lids, each lid corresponding to one of the plurality of stages.

[0019] In some embodiments, adjusting the shape of the top plate with the lift mechanism includes changing the shape of the top plate based on a process temperature and a process pressure.

[0020] In some embodiments, adjusting the shape of the top plate with the lifting mechanism includes increasing the height of a portion of the top plate attached to the lifting mechanism.

[0021] In some embodiments, the method further includes heating the plurality of stages to a process temperature and evacuating the plurality of stages to a process pressure.

[0022] In some embodiments, the method further includes subsequently processing the plurality of semiconductor substrates in the plurality of stations.

[0023] In some embodiments, the plurality of stages are heated to a process temperature and evacuated to a process pressure to flatten the upward deflection in the shape of the top plate.

[0024] In some embodiments, the cover is parallel to the stage during processing of the semiconductor substrate.

[0025] In some embodiments, processing the semiconductor substrate includes processing an LCD panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic plan view of a substrate processing system equipped with a process module assembly.

[0027] Figure 2 Yes, you can Figure 1 An example of a schematic cross-sectional view of a process module used in a substrate processing system.

[0028] Figure 3 and Figure 4 yes Figure 2 Schematic cross-sectional side view of a process module showing a deformation of the process module.

[0029] Figure 5-7 is an example of a process module having a housing with a convex top and / or bottom.

[0030] Figure 8 is a table showing the relationship between the temperature inside the process module under vacuum and the inward deformation of the top plate of the process module.

[0031] Figure 9 is another example of a schematic cross-sectional view of a process module having a convex top plate.

[0032] Figure 10 yes Figure 9 An example of a perspective view of a processing module.

[0033] Figure 11 yes Figure 9 Another example of a perspective view of a processing module.

[0034] Figure 12 is a perspective view of a process module of a substrate processing system illustrating a temperature gradient.

[0035] Figure 13 yes Figure 11 Schematic cross-sectional view of a processing module of a substrate processing system.

[0036] Figure 14 A comparison of deposition process results between a process module having a convexly shaped top plate and a similar process module having a flat top plate is shown.

[0037] Figure 15 is a flow chart illustrating a process for processing a semiconductor substrate. DETAILED DESCRIPTION

[0038] As discussed herein, processing throughput can be increased by increasing the size of substrate processing modules, allowing them to accommodate multiple substrates at once and process multiple substrates simultaneously. Furthermore, the size of the substrates themselves has also increased over time. These and other factors have increased the size of processing modules. As the size of processing modules increases, their sensitivity to external atmospheric pressure also increases.

[0039] In some cases, this sensitivity can be exacerbated by the materials used to form the process modules. For example, a process module may be made of aluminum, which offers advantages such as low levels of heavy metal contamination on processed devices and resistance to chemical corrosion due to exposure to process gases. However, process modules using aluminum can be relatively prone to deformation.

[0040] For many processes, the interior of the processing module may be evacuated to provide a low-pressure processing environment for the substrates contained therein. This may expose the processing module to an abnormally large pressure difference between the interior of the processing module and the external environment. For example, under certain process pressures, compressive forces caused by several tons of atmospheric pressure may be exerted on the processing module. Unfortunately, such compressive forces may cause the wide top and / or bottom portions of the processing module housing to deform. Such deformation may cause the top and / or bottom portions of the processing module housing to bend inward, which may negatively impact the process environment surrounding the substrate and, thereby, negatively impact the process results of the substrate. Furthermore, it will be appreciated that substrate processing may be performed at high temperatures, and these high temperatures may further cause deformation of the processing module.

[0041] In some embodiments, a vacuum processing module has a volume defined by a bottom, a top plate, and walls extending between the bottom and top plates. The processing module can accommodate multiple substrates for processing, with each substrate occupying a dedicated "stage" within the processing module. In some embodiments, each stage can have an associated substrate support and a lid, with the lids for each stage collectively forming a lid assembly. The stages can also have internal dividers separating them from other stages. The top and bottom plates extend across and encompass all stages. The top plate and / or the processing module bottom are formed to bulge outwardly to form a convex shape to offset deformation caused by vacuum pressure and / or high temperatures when processing substrates in the processing module. In some embodiments, the top plate and / or the processing module bottom are "pre-formed," or have a shape with a bulge of a specific size that is calibrated so that, when exposed to the vacuum pressure and temperature of substrate processing, the top plate and the processing module bottom become substantially parallel when compressed.

[0042] In some embodiments, the outward projection can be formed using a rigid structure positioned above the top plate and / or below the bottom of the processing module. For example, the rigid structure can be mounted across the top plate. The rigid structure can be attached to an adjustable lifting mechanism to adjust the size of the projection in the top plate. For example, the adjustable lifting mechanism can be a threaded rod that can be rotated relative to a mating threaded portion of the top plate to increase or decrease the size of the upward extension of the projection or convex shape. In some embodiments, the rigid structure can be a beam.

[0043] The processing module can be part of a semiconductor processing system having a transfer chamber. The processing module can have an openable side with a door that can be opened to provide access between the processing module and the transfer chamber. In some embodiments, the top plate protrusion can be asymmetrical, with the peak of the protrusion offset from the top plate. For example, the peak of the protrusion can be further away from the openable side than from the side of the processing module opposite the openable side.

[0044] Advantageously, the top plate and / or process module bottom can be shaped to resist deformation or be biased so that, even with an expected amount of deformation, the top plate and process module bottom remain substantially parallel during processing. It will be appreciated that providing such a process environment can improve process results relative to unpreformed process modules. For example, a shaped top plate and / or process module bottom can provide a more uniform processing environment, which can include improved precursor access to the substrate surface. As a result, process yield and / or the quality of process results can be improved.

[0045] Reference will now be made to the drawings, wherein like reference numerals refer to like parts throughout.

[0046] Figure 1 FIG1 is a schematic plan view of a substrate processing system 100 equipped with a process module assembly 110. The process module assembly 110 may include a plurality of process modules 115a, 115b, 115c, and 115d arranged around a central transfer chamber 118. Each of the process modules 115a, 115b, 115c, and 115d may include a plurality of reaction chambers 112 for processing substrates, with one substrate housed in a dedicated chamber during processing. In the illustrated embodiment, four process modules are shown. In other embodiments, the substrate processing system 100 may include various other numbers of process module assemblies, such as five, six, and so forth.

[0047] The processing system 100 may further include a controller 140, which may include a hardware microprocessor, a microcontroller, a programmable logic controller, dedicated hardware and / or memory, etc. It should be understood that the various hardware forming the controller 140 may reside in a common location, or may be distributed hardware that communicates with each other. The controller may be programmed or otherwise configured to perform the various processes and related actions described herein. These processes may, for example, include any of the following: loading, processing, determining process pressure and / or temperature, adjusting the top plate and / or bottom shape, and / or unloading sequence described herein. In some embodiments, these processes may be programmed into the controller by storing them as instructions in a non-transitory computer-readable medium (e.g., memory). The controller may communicate with the various power supplies, heating systems, pumps, robots (e.g., substrate transport arms), and airflow controllers or valves of the processing system 100 and be configured to send instructions thereto to complete the programmed processes, as will be understood by those skilled in the art.

[0048] The substrate processing system 100 may also include a load lock chamber 120 and a transport chamber 130. The transport chamber 118 may include a substrate transfer device 114, which may be a transfer arm. The substrate transfer device 114 is configured to receive a substrate and transfer the substrate to one of the processing modules 115a, 115b, 115c, 115d. A module door 190 (schematically shown as a pair of rectangular partitions) is provided between each processing module 115a, 115b, 115c, 115d and the transport chamber 118. It should be understood that the module door 116 may be a resealable closure, such as a gate valve, and Figure 1 The number of module doors 116 in FIG. 1 is for illustrative purposes only and may be varied as needed to facilitate substrate access and volume sealing. When the substrate transfer apparatus 114 transfers a substrate to or from one of the processing modules 115 a, 115 b, 115 c, and 115 d, the module door 116 for that processing module 115 a, 115 b, 115 c, and 115 d may be opened. After the substrate is transferred to or removed from one of the processing modules 115 a, 115 b, 115 c, and 115 d, the corresponding module door 116 may be closed. It should be understood that the operation of the module doors 116, substrate transfer apparatus 114, and the like may be controlled by a controller 140.

[0049] Continue to refer Figure 1 As described herein, in some embodiments, the process module assembly 110 may include multiple process modules, such as four first process modules 115a, 115b, 115c, and 115d, each of which may be similar. In some embodiments, each process module 115a, 115b, 115c, and 115d may include multiple reaction chambers 112, such as four first reaction chambers 112. As shown, the four reaction chambers 112 may be arranged in a 2×2 matrix, but it should be understood that other arrangements are possible. Each reaction chamber 112 may be used to process a substrate. Preferably, each reaction chamber 112 is a single-substrate chamber configured to process a single substrate at a time. For example, the reaction chamber 112 may be sized and have a substrate support configured to accommodate only a single substrate. In some embodiments, the reaction chamber 112 may be a plasma-enhanced chemical vapor deposition (CVD) reactor, a thermal CVD reactor, a plasma-enhanced alumina deposition (ALD) reactor, a thermal ALD reactor, an etching reactor, a UV curing reactor, or the like.

[0050] In some embodiments, the substrate transfer device 114 may be a transfer arm including two or more transfer sub-arms. In some embodiments, the main drive portion of each of the two or more transfer sub-arms may have various articulated structures, such as a 3-link selectively compliant articulated robot arm (SCARA), a 4-link SCARA, a bi-symmetrical arm, a frog leg / scissor-type arm, and a linear sliding arm. Each of the two or more transfer sub-arms may include one or more end effectors. For example, each of the two or more transfer sub-arms may include a plurality of end effectors, for example, two end effectors. The number of end effectors may be equal to the number of stages arranged in a matrix in the load lock chamber 130, or equal to Figure 1 The number of reaction chambers 112 in one process module 115a, 115b, 115c, 115d is shown in FIG.

[0051] Each of the process modules 115a, 115b, 115c, 115d can be connected to the transfer chamber 112 via a module door 116. The module door 116 can be configured to open and close to provide access to and isolation between the reaction chamber 112 and the transfer chamber 118, respectively. For example, after a substrate is transferred to the reaction chamber 112 and while the substrate is being processed, the reaction chamber 112 can be isolated from the transfer chamber 118. Thus, a highly controlled process environment in the reaction chamber 112 can be maintained, and cross contamination (e.g., between different process modules) can be prevented.

[0052] Continue to refer Figure 1 The load lock chamber 120 may include a plurality of load lock stations 120a. The transport chamber 130 may include a plurality of loading ports 130b for docking with an external substrate carrier 101, and a plurality of actuators 130a, such as robotic arms, for moving substrates from the substrate carrier 101 to the load lock stations 120a. In some embodiments, the transport chamber 130 may be an equipment front end module (EFEM). In some embodiments, the substrate carrier 101 may be a front opening unification unit (FOUP).

[0053] In some embodiments, the load lock chamber 120 can be connected to the transport chamber 130 via a transport door 122 (e.g., a gate valve) and to the transfer chamber 135 via a load lock door 124 (e.g., a gate valve). In some embodiments, the transport chamber 130 and the transfer chamber 118 can be connected to opposite sides of the load lock chamber 120. The load lock chamber 120 can be configured to provide a vacuum atmosphere approximately equal to the pressure in the transfer chamber 118 when the substrate transfer device 114 of the transfer chamber 118 loads substrates into the load lock chamber 120 or unloads them from the load lock chamber 140. Similarly, when receiving unprocessed substrates from the transport chamber 130 or returning processed substrates to the transport chamber 130, the pressure within the load lock chamber 120 can be changed to match the pressure in the transport chamber 130. A plurality of load lock stations 120a can be disposed in the load lock chamber 120. As shown, the load lock stations 120a can be arranged in a 2×2 matrix, but other arrangements are possible. A load lock door 124 may be provided between the transfer chamber 118 and the load lock chamber 120. Figure 1 The number of load lock doors 124 in FIG. 1 is for illustrative purposes and may vary. The load lock doors 124 may be opened when the substrate transfer device 114 transfers substrates into and out of the load lock chamber 120. After transferring substrates into and out of the load lock chamber 120, the load lock doors 124 may be closed. The operation of the load lock doors 124, transfer arms, etc. may be controlled by a controller 140.

[0054] The transport chamber 130 may include a door opener (not shown) for opening and closing the door of the load port 130b, thereby providing access for the robot 130a to transfer substrates between the load port 130b and the load lock chamber 120. The robot 130a can move within the transport chamber 130, for example, using rails to guide the movement of the robot 130a. The load port 130b contains the substrates in a sealed space (e.g., within a docked substrate carrier) to protect the substrates from atmospheric impurities or chemical contamination. In some embodiments, two robots 130a are provided, and each robot 130a may include two transfer arms. Thus, four substrates can be transferred simultaneously from the load port 130a to the load lock chamber 120. As shown, it will be understood that in some embodiments, the number of substrates that can be simultaneously transferred by the robot 130a (e.g., four substrates) is equal to the number of load lock stations 120a, which in turn is equal to the number of reaction chambers in each process module within each process module assembly.

[0055] Figure 2 Yes, you can Figure 1An example of a schematic cross-sectional view of a process module for use in a substrate processing system is shown. The process module 150 includes a housing 155, which includes a top plate 160, a bottom plate 165, and sidewalls 170 extending from the bottom plate 165 to the top plate 160. The top plate 160 and the bottom plate 165 can be flat and can each define a horizontal plane. The top plate 160 is parallel to the bottom plate 165.

[0056] Figure 3 and Figure 4 yes Figure 2 FIG1 is a schematic cross-sectional side view of a process module 150, illustrating the deformation of the top plate 160 and the bottom plate 165 when a relatively large external pressure is applied to the process module 150. Typically, processes for depositing layers on substrates, such as CVD and ALD, can be performed at very low pressures. Due to the large pressure differential between the interior of the process module 150 and the external environment, the atmospheric pressure (which may be several tons) that compresses the top plate 160 and the bottom plate 165 can be large, as shown in FIG1. Figure 3 This pressure may cause the top plate 160 and / or the bottom plate 165 to deform in shape, as shown by the arrows. Figure 4 For example, in other words, both top plate 160 and bottom plate 165 may be compressed; the center portion of top plate 160 may sink due to the high pressure, and the center portion of bottom plate 165 may warp within housing 155. This can negatively impact process results. For example, when top plate 160 and / or bottom plate 165 are deformed and non-parallel to each other, the uniformity of the plasma generated between these two structures may be negatively impacted.

[0057] Figure 5-7 is an example of an embodiment of a processing module of a substrate processing system. Each figure can be understood as Figure 1 Schematic cross-sectional view of one of the processing modules of the substrate processing system, the cross section is taken along the plane BB'. Figure 5 The processing module 200 includes a plurality of stages 230 and a housing 205, wherein the stages 230 are disposed in the housing 205. Each stage 230 may include a substrate support for supporting a substrate during processing. It should be understood that each stage 230 may correspond to one of the reaction chambers 112 ( Figure 1 ). Additionally, in some embodiments, the stages may be separated by partitions (not shown).

[0058] Continue to refer Figure 5, the housing 205 includes a top plate 225, a bottom 240, and a side wall 215 extending from the bottom 240 to the top plate 225. As discussed herein, the side wall 215 extends between the top plate 225 and the bottom 240 to form a space in which the stage 230 is set and processing is performed. In some embodiments, the top plate 225 can be a cover assembly, including a frame 220 and a plurality of covers 210. As shown, the stage 230 for accommodating the substrate is provided in the housing 205, and the corresponding cover 210 is provided above the corresponding stage 230. The frame 220 can have an opening, and each cover 210 can be inserted into the opening to seal the housing 205. In some embodiments, the cover 210 can facilitate the generation of plasma in the space between the corresponding stage 230 and the cover 210. A gas pipe (not shown) and an opening for supplying gas to the space between the stage 230 and the cover 210 can be formed through the cover 210. It should be understood that Figure 5-7 The processing module can correspond to Figure 1 Some processing modules 115a, 115b, 115c, 115d are shown.

[0059] refer to Figure 5 , top plate 225 has an outwardly convex shape so that the inner surface of the top plate extends upward. In certain embodiments, the inner surface of the top plate 225 can have a convex shape, an arcuate shape, a pyramid shape and / or a curved shape. In certain embodiments, the lid 210 can be tilted. For example, as shown in the figure, the lid 210 can be approximately parallel to the part of the top plate 200 to which it is attached, and therefore, can be tilted relative to the horizontal plane. In certain embodiments, the outer surface of the top plate 225 convex upward.

[0060] In some embodiments, the center portion of the top plate 225 can protrude upward relative to the outer portion of the top plate 225 (e.g., relative to the outer portion of the top plate 225 that is in contact with the sidewall 215). In some embodiments, the height Hc of the center portion at the apex of the inner protrusion can be in the range of 0.2 mm to 2.0 mm, 0.3 mm to 3.0 mm, or 0.4 mm to 4.0 mm. It should be understood that the height Hc can vary based on the width Wc of the top plate 225, such that Hc can increase as Wc increases. In some embodiments, the width Wc of the top plate 225 can be in the range of 500 mm to 1000 mm, 1000 mm to 1500 mm, or 1500 mm to 2000 mm, corresponding to the values of Hc described above. In addition, as discussed herein, process pressure and / or process temperature can also affect the degree of deformation of the top plate 225, thereby affecting the magnitude of the height Hc. For example, Hc can increase as the pressure differential between the internal pressure of the process module 200 and the ambient pressure outside the process module 200 increases (assuming the ambient pressure is higher than the internal pressure). Alternatively or additionally, Hc can increase as the process temperature increases because the increase in temperature softens the material (e.g., metal) forming the top plate 225.

[0061] In some embodiments, the shape and height Hc of the top plate 225 can be selected such that, upon deformation during substrate processing, the height Hc decreases to a level where the top plate 225 and lid 210 are substantially parallel to the stage 230 and any substrate being processed on the stage 230. As discussed herein, deformation of the top plate 225 during processing can be particularly problematic in process modules that include multiple stages and / or process large substrates.

[0062] In some embodiments, the central portion of the bottom 240 may be outwardly convex (e.g., downwardly convex) compared to the peripheral portion of the bottom 240 (e.g., the peripheral portion of the bottom 240 in contact with the sidewall 215). In some embodiments, the inner surface of the bottom 240 may have a convex shape, an arcuate shape, an inverted pyramid shape, and / or an arcuate shape. The platform 230 may be inclined and substantially parallel to the portion of the bottom 240 where the platform 230 is located. In some other embodiments, the platform 230 is not inclined and is approximately parallel to the top plate 225 and the lid 210. In some embodiments, at its lowest point, the outward convexity in the bottom 240 may extend downward to a height Hb relative to the peripheral portion of the bottom 240 in contact with the sidewall 215. In some embodiments, Hb may be in the range of 0.2 mm to 2.0 mm, 0.3 mm to 3.0 mm, or 0.4 mm to 4.0 mm. With respect to the height Hc, it should be understood that the height Hb may vary depending on the width Wb of the bottom 240, such that Hb may increase as Wb increases. In some embodiments, the width Wb of the bottom 240 can be in the range of 500 mm to 1000 mm, 1000 mm to 1500 mm, or 1500 mm to 2000 mm, corresponding to the values of Hb described above. As also discussed herein, in the case where the ambient pressure is higher than the internal pressure, the height Hb can increase with an increase in the pressure differential between the internal pressure of the process module 200 and the ambient pressure outside the process module 200. In some embodiments, Hb can also increase with an increase in process temperature.

[0063] Now refer to Figure 7 , the top plate 225 and the bottom plate 240 may both protrude outward, as described above with respect to Figure 5 and Figure 6 As discussed herein, in some embodiments, each of the top plate 225 and the bottom plate 240 can have a convex shape, an arcuate shape, a pyramidal shape, and / or a curved shape. The shapes of the top plate 225 and the bottom plate 240 can be adjusted to effectively flatten (become substantially parallel) during processing, for example, in response to a pressure differential generated during processing of a substrate within the process module 200. In some embodiments, during processing, the top plate 225 and the lid 210 are parallel to the stage 230.

[0064] Figure 8 is a table showing the relationship between the temperature inside the process module and the inward depression of the top plate. The pressure inside the process module was kept constant at 3.0 Torr, and the external ambient pressure was 1 atm. As discussed herein, the amount of depression increases with temperature. Notably, the simulation provides a good approximation of the actual measured depression, indicating that effective pre-forming of the top plate and / or bottom plate of the process module can be achieved based on the expected process conditions. In some embodiments, Hc( Figure 5-7 ) can be substantially equal to the inverse of the expected depression.

[0065] Figure 9 is another example of a schematic cross-sectional view of a process module having a convex top plate. Figure 10 yes Figure 9 An example of a perspective view of a processing module.

[0066] Figure 9 and Figure 10 The processing module shown is similar to Figure 5-7 The processing module shown in Figure 9 and Figure 10 Additional details are provided regarding techniques for achieving the desired shape of the top plate. Figure 9 As discussed herein, the processing module 200 includes a plurality of stages 230 and a housing 205 in which the stages 230 are disposed. The housing 205 includes a top plate 225, sidewalls 215, and a bottom 240. In some embodiments, the top plate 225 may include a plurality of covers 210.

[0067] refer to Figure 9 , a rigid structure 270 may be disposed above the top plate 225 and mechanically connected to the top plate 225. The rigid structure 270 may adjust the shape of the top plate 225 and preferably has a greater rigidity than the top plate 225 below. The rigid structure 270 may apply a force to lift the top plate 225, for example, at the connection point with the top plate 225, so that the connection portion of the top plate 225 moves upward, for example, by an amount Hc ( Figure 5 and Figure 7 As a result, the top plate 225 may have a convex shape, an arc shape, a pyramid shape, a curved shape, etc.

[0068] In some embodiments, the rigid structure 270 may include a beam 250 and a lifting mechanism 260. The beam 250 may be disposed above and across the top plate 225. Figure 11 As shown, beams 250 can be disposed between the covers 210. As discussed herein, beams 250 are more rigid than the top plate 225. In some embodiments, beams 250 can be constructed from a different material than the material forming the top plate 225. For example, the beams can be formed from steel, while the top plate can be formed from another material, such as aluminum. In some other embodiments, the rigid structure 270 and the top plate 225 can be formed from the same or similar materials, and the shape and size of the rigid structure 270 can be used to provide enhanced rigidity.

[0069] Continue to refer Figure 9, the ends of the rigid structure 270 can be coupled to the housing 205. For example, one end of the rigid structure 270 can be coupled to one edge portion of the top plate 220, and the other end of the rigid structure 270 can be coupled to the opposite edge portion of the top plate 220. It should be understood that the rigid structure 270 can be coupled to the housing 205 by various means, including by welding, mechanical fasteners, etc.

[0070] In some embodiments, the central portion of the rigid structure 270 may be above and spaced apart from the top plate 220. The rigid structure 270 may include two rod segments 252 and 254, such as Figure 10 As shown. Rod segments 252 and 254 may form an obtuse angle therebetween, such that a gap exists between beam 250 and top plate 220. Alternatively, the rods may have any shape that provides a gap between rigid structure 270 and top plate 220, such as an arcuate shape. In some other embodiments, rigid structure 270 may simply be a straight beam that is separated from top plate 225 by spacers.

[0071] Continue to refer Figure 9 , the lifting mechanism 260 is mounted approximately at the center portion of the rigid structure 270 and the top plate 225. In some embodiments, the lifting mechanism 260 can extend through the rigid structure 270 and the top plate 225, such as the frame 220. The lifting mechanism 260 connects the rigid structure 270 and the top plate 225. In some embodiments, the lifting mechanism 260 can include a threaded rod 262 and a threaded receiving portion 264 in the top plate 225. The threaded rod 262 can be disposed above the beam 250 and pass through the beam 250, and the threaded portion 264 can extend through the top plate 225 and below the top plate 225. The threaded rod 262 can have an external thread, and the threaded portion 264 can have an internal thread. When the external thread of the rod 252 and the internal thread of the portion 264 are rotated relative to each other in a first direction, the top plate 225 moves toward the space between the top plate 225 and the beam 250, so that the center portion of the top plate 225 is higher than the peripheral portion of the top plate 225, thereby increasing the height Hc( Figure 5 and Figure 7 As a result, the top plate 225 may have a convex shape. Rotating the external threads of the rod 252 and the internal threads of the portion 264 in opposite directions may lower the top plate 225, thereby reducing the height Hc ( Figure 5 and Figure 7 ).

[0072] Figure 11 yes Figure 9Another example of a perspective view of a processing module. In some embodiments, the rigid structure 270 includes a plurality of rods 250 that are above and span the top plate 225. It should be understood that the plurality of rods 250 can provide increased rigidity and mechanical strength relative to a single rod 250. For example, two rods 250 can be arranged so that they cross each other (e.g., perpendicularly). Figure 10 As shown, the rods 250 may be disposed in the space between the pair of covers 210. In some embodiments, the lifting mechanism 260 may be disposed at the intersection of the rods 250. In some other embodiments, the lifting mechanism 260 may be disposed along one of the rods 250 and spaced apart from the other rods 250.

[0073] Figure 12 is a perspective view of a process module showing a temperature gradient. As discussed herein, the process module 200 shown may correspond to Figure 1 Any one of the processing modules 115a, 115b, 115c, 115d. The processing module 115b can be selected as an example for discussion. The other processing modules 115a, 115c, 115d can show similar temperature gradients. Figure 12 , the figure can be understood as showing in detail Figure 1 The portion A includes a process module 115b. The process module 115b is connected to the transfer chamber 118 at a side having a door 116. When a substrate is processed in the process module 115b, a temperature gradient II′ occurs due to heat loss from the process module 115b to the transfer chamber 118 caused by a temperature difference between the process module 115b and the transfer chamber 118. Figure 12 As shown. For example, it should be understood that transfer chamber 118 may not be heated or may not be at the same elevated temperature as process module 115b. Therefore, I may be at a higher temperature than I', and the temperature of the central portion of process module 200 may be higher than I and I'. As a result, the temperature difference between I' and the central portion of process chamber 200 may be greater than the temperature difference between I and these central portions. In some embodiments, to compensate for temperature gradients, the shape of top plate 225 may be asymmetrical, for example, having an asymmetrical convex shape, an asymmetrical curved shape, an asymmetrical pyramidal shape, or an asymmetrical curved shape.

[0074] For example, reference Figure 13To provide an asymmetrical shape, the lifting mechanism 260 can be offset from the top plate 225. The lifting mechanism 260 can be positioned closer to the side of the process module where the temperature is higher. For example, the lifting mechanism 260 can be positioned away from the transfer chamber 118 and closer to the side of the process module opposite the door 116 and the transfer chamber 118. Thus, when the lifting mechanism 260 applies a force to lift the top plate, the top plate can have an asymmetrical convex, arcuate, pyramidal, or curved shape with the apex of the shape closer to the side of the process module where the temperature is higher, thereby offsetting the potential increased sensitivity of the top plate 225 to concavity in that portion of the top plate 225.

[0075] Figure 14 Deposition process results are shown for a process module having a convex top plate according to some embodiments and a similar process module having a flat top plate. The deposition was PE ALD deposition to deposit SiN films in a quad chamber module (QCM) commercially available from ASM International NV. The SiN films were deposited under the following conditions: 400-550°C, 10-30 Torr, 500-800 W (13.56 MHz-27 MHz) using a silicon precursor and a nitrogen reactant. The results are considered representative of depositions with various silicon precursors (e.g., aminosilanes, halosilanes, monosilanes, and disilanes) and various nitrogen reactants (e.g., N2, N2 / H2, NH3, etc.).

[0076] Continue to refer Figure 14 To achieve result A, the center of the top plate of the processing module is 0.8 mm higher than the peripheral portion of the top plate. Figure 14 In result B, the process module has a flat top plate. The process conditions of A and B are the same. In the case of a process module having a convex top plate, the top plate is understood to become flat during the deposition process due to the temperature and / or pressure used in the deposition process. Therefore, during the deposition process, the cover of the process module can be understood to be parallel to the stage, which is conducive to uniform deposition, as shown in FIG. Figure 14 On the other hand, in the case where the process module initially has a flat top plate, the center portion of the top plate may be concave due to the temperature and / or pressure generated by the deposition process. Therefore, during the deposition process, the cover of the process module is not parallel to the stage, which leads to uneven deposition results, as shown in FIG. Figure 14 As shown in B.

[0077] Figure 151 is a flow chart illustrating a process 1000 for processing a semiconductor substrate. At block 1010, a semiconductor processing module is provided. The semiconductor processing module may be the processing module 200 discussed herein. For example, the processing module may include a housing enclosing a plurality of stages for accommodating a plurality of semiconductor substrates for processing, and a rigid structure disposed above a lid assembly. The housing may include a bottom, a top plate, and sidewalls extending from the bottom to the lid assembly. The top plate may be a lid assembly, which may include a plurality of lids, each lid corresponding to one of the plurality of stages. The rigid structure may include an adjustable lift mechanism attached to the top plate to change the shape of the top plate.

[0078] At block 1020 , a process temperature and a process pressure of a semiconductor process are determined.

[0079] At block 1030, the lift mechanism is adjusted based on one or both of the process temperature and the process pressure. In some embodiments, adjusting the lift mechanism may include changing the shape of the lid assembly based on both the process temperature and the process pressure. Changing the shape of the lid assembly may include increasing the height of a portion of the lid assembly attached to the lift mechanism to define a shape having a protrusion. For example, as the temperature increases and / or the pressure differential between the low pressure in the process module and the high pressure in the surrounding environment increases, the height of the apex of the protrusion may increase.

[0080] In some embodiments, process 1000 may further include heating the plurality of stages to a process temperature and evacuating the plurality of stages to a process pressure. In some embodiments, process 1000 may further include subsequently processing a plurality of semiconductor substrates in the plurality of stages. In some embodiments, heating the plurality of stages to a process temperature and evacuating the plurality of stages to a process pressure flattens the upward deflection of the lid assembly. In some embodiments, the top plate of the processing module may be shaped such that the lid may lie parallel to the stages during processing of the semiconductor substrate. In some embodiments, process 1000 may be used to process semiconductor substrates. In some embodiments, process 1000 may be used to process LCD panels.

[0081] Although the present invention has been described with reference to some embodiments in the foregoing description, the present invention is not limited thereto. In fact, in addition to those shown and described herein, various modifications of the present invention will become apparent to those skilled in the art based on the foregoing description, and fall within the scope of the appended claims. In all disclosed embodiments, any element used in certain embodiments can be used interchangeably or additionally in another embodiment, unless such replacement is infeasible, or causes adverse effects or cannot be used for its intended purpose. For all purposes, all publications, patents and patent applications cited herein are incorporated herein by reference in their entirety, to the same extent as specifically and individually pointing out that each individual publication, patent or patent application is incorporated herein by reference. Further details of the present invention are provided in the following non-limiting examples.

[0082] Throughout this application, the use of the singular includes the plural unless expressly stated otherwise. In this application, the use of "or" includes "and / or" unless expressly stated otherwise. Furthermore, the terms "include," "comprise," and "comprising" are not limiting.

Claims

1. A processing module for processing a substrate, the processing module comprising: a plurality of stages, each stage configured to receive a substrate; as well as a housing enclosing the plurality of stages, the housing comprising a bottom, a top plate, and side walls extending from the bottom to the top plate, wherein the shape of the top plate defines a protrusion extending upward, The housing further comprises a rigid structure disposed above and spanning the top plate, wherein the rigid structure comprises a lifting mechanism attached to the top plate for maintaining the upward extension of the protrusion.

2. The process module of claim 1, wherein the lifting mechanism is adjustable to adjust the height of the protrusion.

3. The process module of claim 2 , wherein the lifting mechanism comprises a threaded rod attached to a corresponding threaded portion of the top plate, wherein the height of the apex of the protrusion is adjustable by relative rotation of the rod and the corresponding threaded portion of the top plate.

4. The process module of claim 1 , wherein the rigid structure comprises a rigid beam.

5. The process module of claim 1, wherein the top plate is a lid assembly comprising a plurality of lids corresponding to the plurality of stages, and wherein the rigid structure extends between pairs of lids. 6 . The process module of claim 1 , wherein a plurality of covers are disposed above corresponding ones of the stages, wherein the plurality of covers are not parallel to the corresponding stages. 7 . The process module of claim 6 , wherein the total number of the stages and the number of the covers are both four, and wherein the stages and the covers are both arranged in a 2×2 matrix.

8. The process module of claim 1, wherein an apex of the protrusion protrudes within a range of 0.2 mm to 4 mm higher than an outer periphery of the top plate.

9. The process module of claim 1, wherein a bottom portion of the housing extends outward to form a convex shape.

10. A processing module for processing a substrate, comprising: one or more stages, each stage configured to receive a substrate; a housing enclosing the one or more stages, the housing comprising a bottom, a top plate, and sidewalls extending from the bottom to a cover assembly; as well as a rigid structure disposed above the top plate, the rigid structure including an adjustable lifting mechanism attached to the top plate for changing the shape of the top plate, wherein said top plate is said cover assembly, wherein the rigid structure comprises beams extending above and across the top plate, The beam includes a first end and a second end, wherein the first end and the second end are connected to a top plate, the adjustable lift mechanism is attached to the beam at a point between the first end and the second end of the beam, wherein the adjustable lift mechanism is configured to adjust the height between the top plate and the point between the first end and the second end of the beam.

11. The process module of claim 10, wherein the beam is more rigid than the top plate.

12. The process module of claim 10, wherein the lifting mechanism comprises: External thread; as well as an internal thread configured to be coupled to the external thread and rotatable relative to the external thread, wherein one of the external thread and the internal thread is attached to the rigid structure, and the other of the external thread and the internal thread is attached to the top plate.

13. The process module of claim 10, wherein the cover assembly comprises a plurality of covers, the number of the stages and the number of the covers are four, and The platforms and covers are arranged in a 2×2 matrix, and the rigid structure is disposed between two rows of two covers.

14. The processing module of claim 10, wherein: As can be seen in the top view, the lifting mechanism is attached to the top plate at an off-center point of the top plate.

15. A semiconductor processing system comprising: Transporter Room; One or more processing modules attached to the transfer chamber, the one or more processing modules each comprising: a plurality of stages, each stage configured to receive a substrate; a housing enclosing the one or more stations, the housing comprising: bottom; roof; a door providing access to the transfer chamber; and a side wall opposite the door and extending from the bottom to the top panel, wherein the top plate has a convex shape, wherein the convex shape has an apex that is closer to the side wall opposite the door than to the openable door.

16. The semiconductor processing system of claim 15, wherein each stage has a corresponding cover, wherein the top plate is a cover assembly, wherein when the substrate is processed on the stage, the convex shape can be changed to a flat shape in which the cover is parallel to the corresponding stage.

17. The semiconductor processing system of claim 15, further comprising a rigid structure having a lifting mechanism for adjusting the shape of the top plate.

18. The semiconductor processing system of claim 17, wherein the lifting mechanism comprises: External thread; as well as an internal thread configured to be coupled to the external thread and rotatable relative to the external thread, wherein one of the external thread and the internal thread is attached to the rigid structure, and the other of the external thread and the internal thread is attached to the top plate.

19. A method for processing a semiconductor substrate, the method comprising: A semiconductor processing module is provided, the semiconductor processing module comprising: a housing enclosing a plurality of stages for accommodating a plurality of semiconductor substrates for processing, the housing comprising a bottom, a top plate, and sidewalls extending from the bottom to the top plate, wherein the top plate is a lid assembly, wherein the lid assembly comprises a plurality of lids, each lid corresponding to one of the plurality of stages; and a rigid structure disposed above the top plate, the rigid structure including an adjustable lifting mechanism attached to the top plate for changing the shape of the top plate; determining one or both of a process temperature and a process pressure of a semiconductor process; and adjusting the shape of the top plate using the lifting mechanism based on one or both of the process temperature and the process pressure, wherein the rigid structure comprises beams extending above and across the top plate, The beam includes a first end and a second end, wherein the first end and the second end are connected to a top plate, the adjustable lift mechanism is attached to the beam at a point between the first end and the second end of the beam, wherein the adjustable lift mechanism is configured to adjust the height between the top plate and the point between the first end and the second end of the beam.

20. The method of claim 19, wherein the beam is more rigid than the top plate.

21. The method of claim 19, wherein adjusting the shape of the top plate using the lift mechanism comprises changing the shape of the top plate based on both the process temperature and the process pressure.

22. The method of claim 21, wherein adjusting the shape of the top panel using the lifting mechanism comprises increasing a height of a portion of the top panel that is attached to the lifting mechanism.

23. The method of claim 19, further comprising heating the plurality of stages to the process temperature and evacuating the plurality of stages to the process pressure.

24. The method of claim 23, further comprising subsequently processing a plurality of semiconductor substrates in the plurality of stations.

25. The method of claim 24, wherein heating the plurality of stages to the process temperature and evacuating the plurality of stages to the process pressure flattens the upward deflection of the shape of the top plate.

26. The method of claim 25, wherein: During processing of a semiconductor substrate, the cover is parallel to the stage.

27. The method of claim 24, wherein processing a semiconductor substrate comprises processing an LCD panel.

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