Mounting table, inspection device and temperature correction method

Abstract

The present invention provides a loading platform, an inspection device and a temperature correction method. The loading platform is a loading platform for loading a substrate to be inspected, and has a plurality of temperature sensors and electrode pads. The plurality of temperature sensors respectively measure the temperature of a plurality of parts of the loading platform. The electrode pads are respectively connected to the temperature sensors and are arranged on the loading surface.

Description

Technical Field

[0001] The invention relates to a mounting table, an inspection device and a temperature correction method. Background Art

[0002] As an example of an inspection device for inspecting a wafer having a plurality of semiconductor devices formed thereon, a detector can be cited. The detector has a probe card having a plurality of columnar contact terminals, i.e., contact probes. In the detector, by bringing the wafer into contact with the probe card, each contact probe is brought into contact with an electrode pad or a solder bump in the semiconductor device. In the detector, electricity (signals) are further made to flow from each contact probe to a circuit of the semiconductor device connected to each electrode pad or each solder bump, thereby inspecting the conduction state of the circuit, etc.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2012-231040 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a mounting table, an inspection device, and a temperature calibration method capable of easily calibrating a temperature sensor for controlling the mounting table in a vacuum adsorption state.

[0008] Technical solutions for solving technical problems

[0009] A mounting platform of one embodiment of the present invention is a mounting platform for mounting a substrate to be inspected, and has a plurality of temperature sensors and electrode pads. The plurality of temperature sensors respectively measure the temperature of a plurality of locations of the mounting platform. The electrode pads are respectively connected to the temperature sensors and are arranged on the mounting surface.

[0010] Effects of the Invention

[0011] According to the present invention, the control temperature sensor of the mounting table can be easily calibrated in a vacuum adsorption state. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram showing an example of a wafer inspection apparatus in the first embodiment of the present invention.

[0013] Figure 2 It is along Figure 1 Cross-sectional view along line II-II in FIG.

[0014] Figure 3 This is a diagram showing an example of the structure of the chuck top in the first embodiment of the present invention.

[0015] Figure 4 It is along Figure 3 Cross-sectional view along line III-III in FIG.

[0016] Figure 5 It is a diagram showing an example of the configuration of the transport table and the tester in the first embodiment.

[0017] Figure 6 This is a diagram showing a detailed example of the structure of the conveyor table.

[0018] Figure 7 This is a flowchart showing an example of the temperature correction method in the first embodiment. DETAILED DESCRIPTION

[0019] Hereinafter, embodiments of the disclosed mounting table, inspection device, and temperature calibration method will be described in detail based on the drawings. In addition, the disclosed technology is not limited to the following embodiments.

[0020] In recent years, in order to improve the inspection efficiency of wafers, a wafer inspection device has been developed, which has multiple probe cards and can inspect the semiconductor devices of the wafer using other probe cards while the wafer is being transported to one probe card using a conveyor. In this wafer inspection device, when each wafer is brought into contact with each probe card, the wafer is placed on the top of a chuck, which is a thick plate component, and the space between the probe card and the top of the chuck is evacuated so that the wafer and the top of the chuck are brought into contact with the probe card together. Here, when the wafer is brought into contact with the probe card, the top of the chuck is placed on the conveyor, and the conveyor moves the top of the chuck toward the probe card. Afterwards, the top of the chuck goes to the probe card and is adsorbed, and is separated from the conveyor.

[0021] However, in recent years, the inspection conditions for wafer inspection have become more complicated, especially in high temperature environments and low temperature environments where many inspections are performed. In this case, it is required to adjust the temperature of the top of the chuck (mounting table) to the temperature for inspection. The temperature of the top of the chuck is adjusted based on the temperature measured by the temperature sensor for temperature control set at the top of the chuck. The temperature sensor for temperature control is calibrated, for example, from one month to every six months. The calibration of the temperature sensor for temperature control can be considered, for example, in an open state to the atmosphere, by configuring a brick-type temperature sensor (thermocouple type) for calibration on the top of the chuck and measuring it manually. However, in an open state to the atmosphere, unlike a vacuum adsorption state, heat (heat) sometimes dissipates from the top of the chuck to the atmosphere, and the temperature distribution is different from that in a vacuum adsorption state. In addition, regarding the calibration of the temperature sensor for temperature control, for example, a method of using a calibration wafer provided with a temperature measuring resistor for calibration is proposed. However, when measuring the resistance value of the temperature measuring resistor of the calibration wafer, the measurement becomes complicated sometimes by considering the resistance value of the wiring. Therefore, people expect a mounting table that can easily calibrate the control temperature sensor in a vacuum adsorption state.

[0022] [First embodiment]

[0023] [Structure of Wafer Inspection Device 10]

[0024] Figure 1 1 is a diagram showing an example of a wafer inspection apparatus in the first embodiment of the present invention. Figure 2 It is along Figure 1 Cross-sectional view along line II-II in FIG. Figure 1 and Figure 2 The wafer inspection apparatus 10 shown has an inspection chamber 11. The inspection chamber 11 has an inspection area 12 for inspecting the electrical characteristics of each semiconductor device of the wafer W, a loading and unloading area 13 for loading and unloading the wafer W relative to the inspection chamber 11, and a conveying area 14 provided between the inspection area 12 and the loading and unloading area 13.

[0025] The inspection area 12 is provided with a tester 15 as an interface for inspecting a plurality of wafers, and a plurality of inspection spaces 12a corresponding to each tester 15 are provided. Specifically, the inspection area 12 has a three-layer structure of a tester row consisting of a plurality of testers arranged horizontally, and one tester side camera 16 is arranged corresponding to each tester row. Each tester side camera 16 moves horizontally along the corresponding tester row to check the position of the wafer W and the like that is located in front of each tester 15 constituting the tester row and is transported by the transport stage 18 described later, and the degree of inclination of the chuck top 29 described later.

[0026] The loading and unloading area 13 is divided into a plurality of storage spaces 17. Ports 17a, aligners 17b, loaders 17c, and controllers 17d are provided in each storage space 17. Port 17a receives a FOUP as a container for storing a plurality of wafers. Aligner 17b performs position alignment of the wafers. In loader 17c, a probe card 19 described later is loaded and unloaded. Controller 17d controls the operation of each component of wafer inspection device 10.

[0027] In the conveying area 14, there is provided a conveying stage 18 which can move not only in the conveying area 14 but also to the inspection area 12 and the carrying-in and carrying-out area 13. One conveying stage 18 is provided corresponding to each tester row, and receives a wafer W from a port 17a of the carrying-in and carrying-out area 13 and conveys it to each inspection space 12a, and conveys the wafer W after the inspection of the electrical characteristics of the semiconductor device is completed from each inspection space 12a to the port 17a.

[0028] In the wafer inspection apparatus 10, electrical characteristics of each semiconductor device of the wafer W conveyed to each tester 15 are inspected. At this time, in the wafer inspection apparatus 10, while the conveying stage 18 conveys the wafer W to one inspection space 12a, the electrical characteristics of each semiconductor device of another wafer W can be inspected in another inspection space 12a, thereby improving the inspection efficiency of the wafer.

[0029] Here, use Figure 3 and Figure 4 , the chuck top 29 serving as a mounting table will be described. Figure 3 1 is a diagram showing an example of the structure of the chuck top in the first embodiment of the present invention. Figure 4 It is along Figure 3 A cross-sectional view of line III-III in FIG. Figure 3 and Figure 4 As shown, the chuck top 29 has a plurality of temperature sensors 70 and a control temperature sensor 71 inside the mounting surface side. In addition, the chuck top 29 has a plurality of electrode pads 72 on the mounting surface that come into contact with the contact probes 25 of the probe card 19 described later.

[0030] The temperature sensors 70 are provided in plurality on the mounting surface of the chuck top 29, for example, within a range covering a wafer of 200 mm to 300 mm. Figure 3In the example, the number is 25, but as long as the number can be used to grasp the temperature distribution of the mounting surface, it can be less than 25 or more than 25. The number of temperature sensors 70 can be set to any number in the range of 17 to 1000, for example. The temperature sensor 70 can use a digital temperature sensor, for example. By using a digital temperature sensor, the influence of wiring resistance, noise, etc. can be minimized. The temperature sensor 70 has an accuracy of ±0.3°C (maximum value) in the range of -55°C to +150°C, for example. The temperature sensor 70 has an I 2 C, SMBus interface, output temperature data. Figure 3 and Figure 4 In the figure, the size of the temperature sensor 70 is described as larger than the actual size for the purpose of explanation. The actual size of the temperature sensor 70 is, for example, 2 mm square and about 0.8 mm thick, or 1.5 mm×0.95 mm and about 0.5 mm thick.

[0031] The control temperature sensor 71 is a temperature sensor for controlling the temperature of the chuck top 29 when the wafer W to be inspected is inspected by the wafer inspection apparatus 10. The control temperature sensor 71 is a temperature sensor using a platinum resistance temperature measuring body, for example. The wafer inspection apparatus 10 measures the temperature by measuring the resistance value of the control temperature sensor 71 and calculating the temperature of the chuck top 29 based on the measured resistance value.

[0032] The electrode pads 72 are electrode pads for power supply and communication with each temperature sensor 70. The electrode pads 72 are electrically connected to corresponding terminals of the temperature sensor 70 via through holes 73. That is, the electrode pads 72 are terminals of the temperature sensor 70 on the mounting surface, and the temperature signal (temperature data) measured by the temperature sensor 70 can be read by the tester 15 via the probe card 19.

[0033] Next, use Figure 5 and Figure 6 , the structure of the conveyor table and the tester is explained. Figure 5 1 is a diagram showing an example of the structure of the conveyor table and the tester in the first embodiment. Figure 5 The transport stage 18 shows a state where the chuck top 29 is in contact with the probe card 19 of the tester 15, and the structure of the inspection space 12a is mainly shown in a cross-sectional view. Figure 5 In the description, the state where the chip W is not placed is described.

[0034] exist Figure 5In the embodiment, the tester 15 is installed on a telescopic frame (pogo frame) 20 fixed to an apparatus frame (not shown). A probe card 19 is mounted on the lower portion of the telescopic frame 20. A flange 22 is arranged so as to surround the probe card 19.

[0035] The probe card 19 has: a disk-shaped body 24; a plurality of electrodes (not shown) arranged on substantially one side of the upper surface of the body 24; and a plurality of contact probes 25 (contact terminals) arranged so as to protrude downward in the figure from the lower surface of the body 24. Each electrode is connected to a corresponding contact probe 25. When the chuck top 29 abuts against the probe card 19, each contact probe 25 contacts an electrode pad 72 formed on the mounting surface of the chuck top 29. In addition, when the wafer W is placed on the chuck top 29, each contact probe 25 contacts an electrode pad or a solder bump of each semiconductor device formed on the wafer W.

[0036] The telescopic frame 20 has a main body 26 that is substantially in the form of a plate, and a plurality of telescopic block insertion holes 27 that are through holes that are provided near the center of the main body 26. A telescopic block 28 formed by arranging a plurality of pogo pins is inserted into each of the telescopic block insertion holes 27. The telescopic block 28 is connected to an inspection circuit (not shown) provided in the tester 15, and contacts a plurality of electrodes on the upper surface of the main body 24 in the probe card 19 mounted on the telescopic frame 20. The telescopic block 28 is electrically connected to each contact probe 25 of the probe card 19 connected to the electrodes, and allows signals of temperature data output from the plurality of temperature sensors 70 to flow to the inspection circuit via each contact probe 25. In addition, when the wafer W is placed on the chuck top 29, the telescopic block 28 allows electrical signals to flow to each contact probe 25 of the probe card 19, and allows electrical signals flowing from the circuits of each semiconductor device of the wafer W to flow to the inspection circuit via each contact probe 25.

[0037] The flange 22 has an upper flange 22a and a lower flange 22b. In addition, the flange 22 has a cylindrical bellows 23 between the upper flange 22a and the lower flange 22b. The upper flange 22a is engaged with the telescopic frame 20 and sealed using a seal or the like. The lower flange 22b can move in the up-down direction relative to the telescopic frame 20.

[0038] Before the lower flange 22b contacts the chuck top 29, it moves downward due to its own weight, so that the lower surface of the lower flange 22b is located below the front end of each contact probe 25 of the probe card 19. The bellows 23 is a metal zigzag structure that can be extended and retracted in the vertical direction. The lower end and the upper end of the bellows 23 are in close contact with the upper surface of the lower flange 22b and the lower surface of the upper flange 22a, respectively.

[0039] The space between the telescopic frame 20 and the base 21 of the tester 15 is sealed by the sealing member 30, and the base 21 is mounted on the telescopic frame 20 by evacuating the space. The space between the telescopic frame 20 and the probe card 19 is also sealed by the sealing member 31, and the probe card 19 is mounted on the telescopic frame 20 by evacuating the space.

[0040] The conveyor 18 has a chuck top 29 and an aligner 32 as thick plate members. The chuck top 29 is placed on the aligner 32, and a wafer W is placed on the upper surface of the chuck top 29 during inspection. The chuck top 29 is vacuum-adsorbed to the aligner 32, and the wafer W is vacuum-adsorbed to the chuck top 29. Therefore, when the conveyor 18 moves, the wafer W can be prevented from moving relative to the conveyor 18. In addition, the method of holding the chuck top 29 and the wafer W is not limited to vacuum adsorption, as long as the method can prevent the chuck top 29 and the wafer W from moving relative to the aligner 32, for example, it can also be held by electromagnetic adsorption or clamping. In addition, a step 29a is formed on the peripheral portion of the upper surface of the chuck top 29, and a sealing member 33 is arranged on the step 29a.

[0041] The conveyor stage 18 is movable, so that the wafer W placed on the chuck top 29 can be moved to the bottom of the probe card 19 in the inspection space 12a to face the probe card 19, and can be moved to the tester 15. In addition, when the temperature of the chuck top 29 is calibrated, the chuck top 29 is placed opposite to the probe card 19 without placing the wafer W. The space S is a space formed when the chuck top 29 abuts against the lower flange 22b, and the chuck top 29 or the wafer W abuts against the probe card 19. That is, the space S is a space surrounded by the chuck top 29, the flange 22, the telescopic frame 20, and the probe card 19, and is sealed by the bellows 23 and the sealing member 33. In the space S, the space S is evacuated via the vacuum line 26a, so that the chuck top 29 is held on the probe card 19 side. In the space S, the chuck top 29 or the wafer W placed on the chuck top 29 abuts against the probe card 19. At this time, the electrode pads 72 of the chuck top 29 abut against the contact probes 25 of the probe card 19. Alternatively, the electrode pads and solder bumps in the semiconductor devices of the wafer W abut against the contact probes 25 of the probe card 19. In addition, in the wafer inspection apparatus 10, the movement of the conveyor stage 18 is controlled by the controller 17d, and the controller 17d grasps the position and movement amount of the conveyor stage 18.

[0042] The aligner 32 adjusts the relative position and inclination of the chuck top 29 with respect to the probe card 19. In the wafer inspection device 10, the chuck top 29 of each inspection space 12a is equipped with a temperature control mechanism such as a heater and a coolant passage (not shown) to realize inspection in a high temperature environment or a low temperature environment. Therefore, during the inspection in a high temperature environment or a low temperature environment, the aligner 32 adjusts the position and inclination of the probe card 19 and the chuck top 29, which are accompanied by deformation caused by heat dissipation from the heater built into the chuck top 29 and heat absorption into the coolant passage. In addition, as the temperature range, for example, a range of 130°C to -40°C can be cited.

[0043] Figure 6 FIG. 1 is a diagram showing an example of a detailed structure of a conveyor. Figure 6 In the figure, for easy understanding, the state of seeing through the inside of the aligner 32 is depicted. In addition, the state of being separated from the aligner 32 by a gap is depicted, and the left-right direction in the figure is set as the X direction, the up-down direction is set as the Z direction, the depth direction is set as the Y direction, and the rotation direction around the axis in the Z direction is set as the θ direction.

[0044] like Figure 6 As shown, the aligner 32 includes an X base 34, an X guide 35, an X block 36, a Y base 37, a Y guide 38, a Y block 39, and a Z base 40, which are plate-like members. The X guide 35 is a rail-shaped guide extending in the X direction on the X base 34. The X block 36 is a plurality of blocks engaged with the X guide 35 and movable in the X direction. The Y base 37 is a plate-like member supported by each X block 36. The Y guide 38 is a rail-shaped guide extending in the Y direction on the Y base 37. The Y block 39 is a plurality of blocks engaged with the Y guide 38 and movable in the Y direction. The Z base 40 is a plate-like member supported by each Y block 39. The Y base 37 is movable in the X direction relative to the X base 34 by each X block 36 moving in the X direction. In addition, the Z base 40 is movable in the Y direction relative to the Y base 37 and the X base 34 by each Y block 39 moving in the Y direction.

[0045] In addition, a Z block hole 41 is formed at the center of the Z base 40, and a Z block 42 having an H-shaped cross section is inserted in the Z block hole 41. The Z block 42 has a flange-shaped portion 43 inside, and the flange-shaped portion 43 is screwed with a ball screw 44 extending in the Z direction. The ball screw 44 rotates around the axis using the rotational force transmitted from the Z-axis motor 45 via the drive belt 46, and the flange-shaped portion 43 screwed with the rotating ball screw 44 moves in the Z direction. As a result, the Z block 42 moves in the Z direction along a guide member not shown in the figure. A plurality of actuators 47 are arranged on the upper surface of the flange-shaped portion 43, and each actuator 47 supports a chuck base 49 having a substantially circular plate shape via a roller ring 48. The roller ring 48 has a driving mechanism in the θ direction not shown in the figure, and supports the chuck base 49 in a manner that the chuck base 49 can rotate in the θ direction. The number of actuators 47 to be configured only needs to be 2 or more. For example, 3 actuators 47 may be configured, or 2 actuators 47 and 1 height fixed support portion (not shown) may be configured. The chuck base 49 rotates in the θ direction using a structure not shown in the figure. The chuck base 49 has a chuck top adsorption surface 52 formed by the central portion of the upper surface, and the bottom plate 53 of the chuck top 29 is vacuum adsorbed on the chuck top adsorption surface 52. Thus, the chuck top 29 is placed and mounted on the aligner 32. In addition, the chuck base 49 has a plurality of height sensors 54 arranged on the peripheral portion of the upper surface and a positioning pin 55 with a hemispherical upper end. On the other hand, the chuck top 29 has: a plurality of detection plates 56 arranged on the lower surface at a position opposite to each height sensor 54; and a plurality of positioning blocks 57 arranged at a position opposite to each positioning pin 55.

[0046] When the chuck top 29 is placed on the aligner 32, each height sensor 54 measures the relative positional relationship between the chuck top 29 and the chuck base 49 (aligner 32), that is, the distance from the upper surface of the chuck base 49 to the lower surface of the chuck top 29. Specifically, the height sensor 54 measures the distance from each height sensor 54 to each corresponding detection plate 56 (hereinafter referred to as "chuck top height"). The measured chuck top heights are stored in the memory of the controller 17d, etc. Each height sensor 54 measures the chuck top height. Here, when the chuck top 29 is placed on the aligner 32, due to the inclination of the chuck top adsorption surface 52, etc., the chuck top 29 and the chuck base 49 are sometimes not necessarily completely parallel. That is, the chuck top 29 is sometimes slightly inclined relative to the chuck base 49, so, for example, even if the chuck top height measured by a certain height sensor 54 is 500μm, there is a case where the chuck top height measured by another height sensor 54 is 550μm. In the wafer inspection apparatus 10 , the chuck top heights measured by the height sensors 54 are associated with the height sensors 54 and stored.

[0047] The lower end of each positioning block 57 is formed into a conical shape and engages with the hemispherical upper end of the corresponding positioning pin 55. In the wafer inspection device 10, each positioning block 57 engages with each corresponding positioning pin 55, thereby defining the position of the chuck top 29 relative to the chuck base 49 (aligner 32).

[0048] In addition, the aligner 32 has an upper confirmation camera 62 for confirming the degree of inclination of the probe card 19 and the telescopic frame 20. The upper confirmation camera 62 is installed on the Z block 42. In addition, in the aligner 32, each actuator 47 raises the chuck base 49, and the raising amount of each actuator 47 can be adjusted individually. That is, the aligner 32 can adjust the inclination of the chuck base 49 and the inclination of the chuck top 29 by making the raising amount of each actuator 47 different.

[0049] [Temperature correction method]

[0050] Next, the temperature correction method in the first embodiment will be described. Figure 7 This is a flowchart showing an example of the temperature correction method in the first embodiment.

[0051] The wafer inspection apparatus 10 transports the probe card 19 from the loader 17c to the inspection space 12a where temperature correction (calibration) is performed using the transport stage 18. The wafer inspection apparatus 10 vacuum-suctions the probe card 19 from the transport stage 18 to the telescopic frame 20 (step S1).

[0052] Next, the wafer inspection apparatus 10 uses the conveying stage 18 to convey the chuck top 29 to the inspection space 12a where the temperature correction is performed. The wafer inspection apparatus 10 uses the conveying stage 18 to convey the chuck top 29 to the lower part of the probe card 19. The wafer inspection apparatus 10 raises the chuck top 29 so that the electrode pads 72 of the chuck top 29 come into contact with the contact probes 25 of the probe card 19. In addition, the wafer inspection apparatus 10 vacuum-adsorbs the chuck top 29 to the probe card 19 side (step S2).

[0053] The wafer inspection apparatus 10 moves the conveyor stage 18 away from the inspection space 12a, controls the temperature control mechanism (cooling device) (not shown) of the chuck top 29, and controls the chuck top 29 to a first temperature that serves as a reference for temperature correction (step S3). The wafer inspection apparatus 10 controls, for example, when the first temperature is -40°C, the refrigerant at -45°C and the heater in the chuck top 29 are controlled to maintain -40°C.

[0054] The tester 15 acquires the temperature data measured at the arrangement position of each temperature sensor 70 on the chuck top 29 (step S4). The tester 15 calculates the deviation of the control temperature sensor 71 based on the acquired temperature data. That is, the tester 15 measures the correlation between the surface temperature of the chuck top 29 and the control temperature sensor 71. For example, when the set temperature of the chuck top 29 in the wafer inspection device 10 is a first temperature, the tester 15 calculates the difference between the average value of the temperature distribution of the mounting surface based on the temperature measured by each temperature sensor 70 and the first temperature as the deviation. The tester 15 calibrates the control temperature sensor 71 based on the calculated deviation (step S5). After the temperature calibration is completed, the wafer inspection device 10 transfers to the inspection of the wafer W as the inspection object.

[0055] Thus, in the first embodiment, the control temperature sensor of the stage can be easily calibrated in the vacuum adsorption state. In addition, in the first embodiment, in the wafer inspection device 10 with multiple test heads, the control temperature sensor of the stage can be calibrated without stopping other test heads (tester 15). That is, in the first embodiment, the standby time (downtime) of the wafer inspection device 10 can be shortened. In addition, in the first embodiment, since the temperature calibration can be performed under normal alignment, it is also possible not to wait for the dew point to recover by opening the cover of the inspection chamber 11 in order to set the jig on the chuck top 29.

[0056] [Second Embodiment]

[0057] In the first embodiment, the control temperature sensor 71 of the chuck top 29 is calibrated using the tester 15 of the wafer inspection device 10, but the control temperature sensor 71 may be calibrated using a test jig instead of the tester 15. The jig calculates, for example, the deviation of the control temperature sensor 71 based on the temperature data measured by the temperature sensor 70, similarly to the tester 15. The jig calibrates the control temperature sensor 71 based on the calculated deviation. In addition, the jig is connected to the telescopic frame 20 and the like so that electric signals can be transmitted and received via the contact probe 25 without exposing the inspection space 12a to the external atmosphere where the wafer inspection device 10 is installed. In this way, in the second embodiment, the control temperature sensor of the stage can be easily calibrated in a vacuum adsorption state without using the tester 15. That is, in the second embodiment, for example, the inspection and maintenance of the tester 15 and the calibration of the control temperature sensor 71 of the chuck top 29 can be performed simultaneously.

[0058] As described above, according to the first embodiment, the stage (chuck top 29) is a stage on which the substrate to be inspected (wafer W) is placed, and has a plurality of temperature sensors 70 and electrode pads 72. The plurality of temperature sensors 70 respectively measure the temperatures of a plurality of locations of the stage. The electrode pads 72 are respectively connected to the temperature sensors 70 and are provided on the placement surface. As a result, the temperature sensor for controlling the stage can be easily calibrated in a vacuum adsorption state.

[0059] According to the first embodiment, the temperature sensor 70 is disposed inside the mounting table (chuck top 29) and is electrically connected to the electrode pad 72. As a result, the temperature data of each part of the mounting table can be acquired through the probe card 19.

[0060] According to the first embodiment, the electrode pad 72 is provided so as to be contactable with the probe of the probe card 19. The temperature signal measured by the temperature sensor 70 can be read via the probe card 19. As a result, the control temperature sensor of the mounting table can be easily calibrated in a vacuum state.

[0061] According to the first embodiment, the mounting table (chuck top 29) further includes a control temperature sensor 71 for controlling the temperature of the mounting table. The control temperature sensor 71 is calibrated based on the temperatures measured by the plurality of temperature sensors 70. As a result, the standby time of the wafer inspection apparatus 10 can be shortened.

[0062] In addition, according to the first embodiment, the stage (chuck top 29) is vacuum-adsorbed to the telescopic frame 20 supporting the probe card 19. In addition, the measurement of the plurality of temperature sensors 70 is performed in a state where the space between the stage and the probe card 19 is vacuum-drawn. As a result, the control temperature sensor of the stage can be easily calibrated in a vacuum-adsorbed state.

[0063] In addition, according to the first embodiment, the inspection device (wafer inspection device 10) is an inspection device for inspecting an inspected substrate (wafer W), and has a mounting table (chuck top 29) on which the inspected substrate is mounted. The mounting table has a plurality of temperature sensors 70 and electrode pads 72. The plurality of temperature sensors 70 respectively measure the temperature of a plurality of locations on the mounting table. The electrode pads 72 are respectively connected to the temperature sensors 70 and are provided on the mounting surface. As a result, the control temperature sensor of the mounting table can be easily calibrated in a vacuum adsorption state.

[0064] In addition, according to the first embodiment, the temperature correction method of the stage (chuck top 29) on which the substrate to be inspected is placed is to vacuum adsorb the stage to the probe card 19 side formed with probes that contact the stage. In addition, the temperature correction method uses a plurality of temperature sensors 70 provided on the stage to measure the temperatures of a plurality of locations of the stage, respectively. In addition, the temperature correction method corrects the control temperature sensor 71 that controls the temperature of the stage based on the measured temperatures of the plurality of locations. As a result, the control temperature sensor of the stage can be easily calibrated in the vacuum adsorption state.

[0065] The embodiments disclosed herein are illustrative in all aspects and should not be considered restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the appended claims and the gist thereof.

[0066] Description of Reference Numerals

[0067] 10 Wafer inspection device

[0068] 15 Tester

[0069] 18 Conveyor platform

[0070] 19 Probe Card

[0071] 20 Spring rack

[0072] 25 Contact probe

[0073] 29 Chuck Top

[0074] 32 Alignment

[0075] 70 Temperature Sensor

[0076] 71 Control temperature sensor

[0077] 72 electrode pad

[0078] 73 Through Holes

[0079] W chip.

Claims

1. A mounting table for mounting a substrate to be inspected, characterized in that: include: A plurality of temperature sensors, which respectively measure the temperatures of a plurality of locations of the mounting table; Electrode pads connected to the temperature sensors respectively and arranged on the mounting surface; and a control temperature sensor for controlling the temperature of the mounting table, The electrode pads are configured to be contactable with probes of a probe card, The temperature signal measured by the temperature sensor can be read via the probe card. The control temperature sensor is calibrated based on the temperatures respectively measured by the plurality of temperature sensors.

2. The mounting table according to claim 1, wherein: The temperature sensor is disposed inside the mounting table and is electrically connected to the electrode pad.

3. The mounting table according to claim 1 or 2, characterized in that: The stage is vacuum-adsorbed to a telescopic frame supporting the probe card. The measurement using the plurality of temperature sensors is performed in a state where a space between the mounting table and the probe card is evacuated.

4. An inspection device for inspecting an inspected substrate, characterized in that: include: A mounting table is provided for mounting the substrate to be inspected, The mounting platform comprises: A plurality of temperature sensors, which respectively measure the temperatures of a plurality of locations of the mounting table; Electrode pads connected to the temperature sensors respectively and disposed on the mounting surface; and a control temperature sensor for controlling the temperature of the mounting table, The electrode pads are configured to be contactable with probes of a probe card, The temperature signal measured by the temperature sensor can be read via the probe card. The control temperature sensor is calibrated based on the temperatures respectively measured by the plurality of temperature sensors.

5. A method for calibrating the temperature of a stage for mounting a substrate to be inspected, characterized in that: include: A step of vacuum-adsorbing the mounting table to a probe card side on which probes contacting the mounting table are formed; The step of measuring the temperatures of the plurality of locations on the mounting table using a plurality of temperature sensors disposed on the mounting table and respectively measuring the temperatures of the plurality of locations, and reading the temperature signals measured by the temperature sensors via electrode pads and the probe card, wherein the electrode pads are respectively connected to the temperature sensors and are disposed on the mounting surface so as to be contactable with the probes; and A control temperature sensor that controls the temperature of the mounting table is corrected based on the measured temperatures of the plurality of locations.

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