Substrate processing method and substrate processing apparatus

Abstract

The substrate W supported by the central portion of the rotary chuck 5 is rotated around the rotation axis Al. In the outer peripheral portion etching process, an etching liquid is discharged from the discharge port 6a of the processing liquid nozzle 6 to the liquid landing position 105 provided to the outer peripheral portion 102 of the upper surface of the rotating substrate W. In the outer peripheral portion etching process, the height of the outer peripheral portion 102 of the upper surface (height strain HD of the outer peripheral portion 102 of the upper surface) is monitored, and the liquid landing position 105 is moved in the radial direction RD based on the height strain HD of the outer peripheral portion 102 of the upper surface obtained (height strain monitoring process (S6) & liquid landing position moving process (S7)). Thereby, the inner peripheral position LFa of the liquid film LF formed by the etching liquid supplied to the liquid landing position 105 is adjusted to be close to the desired position.

Description

TECHNICAL FIELD

[0001] This application claims priority from Japanese Patent Application No. 2019-100238 filed May 29, 2019, the entire contents of which are incorporated herein by reference.

[0002] The present application relates to a substrate processing method and a substrate processing apparatus. Examples of a substrate to be processed include semiconductor wafers, substrates for liquid crystal display devices, substrates for FPDs (Flat Panel Displays) such as organic EL (Electroluminescence) display devices, optical discs, magnetic discs, optical magnetic discs, photomasks, ceramic substrates, substrates for solar cells, and the like. BACKGROUND

[0003] In a manufacturing process of semiconductor devices, liquid crystal display devices, and the like, a peripheral portion of a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display device, or the like is subjected to processing using an etching liquid (peripheral portion etching). A single-wafer substrate processing apparatus that processes substrates one by one, for example, is provided with a spin chuck that holds a substrate horizontally and rotates it, and a processing liquid nozzle that discharges an etching liquid to an upper surface peripheral portion of a substrate held to the spin chuck (see Patent Literature 1 described below).

[0004] Sometimes, a substrate supported to a spin chuck can be warped. When a substrate is warped, a peripheral portion of the substrate is displaced in the up-down direction with respect to a central portion of the substrate (in this case, a vicinity of the center of the substrate). In other words, a height position of the peripheral portion of the substrate is displaced in the up-down direction with respect to the center of the substrate. If the height position of the surface peripheral portion of the substrate deviates from a desired height position, an etching width at the surface peripheral portion of the substrate can deviate from a desired width.

[0005] In Patent Literature 1 described below, it is described that, in order to make an actual etching width coincide with a desired width, a discharge direction of a processing liquid discharged from a discharge port (an angle of incidence at a liquid landing position provided to the upper surface peripheral portion of the substrate) is changed according to a magnitude of a height strain of each portion of the upper surface peripheral portion of the substrate.

[0006] PRIOR ART DOCUMENTS

[0007] PATENT LITERATURE

[0008] Patent Literature 1: Japanese Patent Application Publication No. 20018-46105 SUMMARY

[0009] PROBLEMS TO BE SOLVED BY THE INVENTION

[0010] However, the incident angle at the liquid landing position is set to an angle at which the performance of the fine particles after the outer peripheral portion is etched is kept optimal. Therefore, if the magnitude of the height strain of each portion of the surface outer peripheral portion of the substrate is detected as in Patent Document 1, and the incident angle at the liquid landing position is changed according to the height variation of each portion detected, although the uniformity of the etching width (i.e., the processing width) can be kept, on the other hand, the performance of the fine particles after the outer peripheral portion processing (the outer peripheral portion etching) can not be kept optimal.

[0011] The present application has been achieved in such a background, and provides a substrate processing method and a substrate processing apparatus capable of precisely controlling the processing width at the surface outer peripheral portion of the substrate, and capable of inhibiting or preventing the adhesion of fine particles to the surface outer peripheral portion of the substrate after the outer peripheral portion processing.

[0012] Means for solving the problem

[0013] One embodiment of the present application provides a substrate processing method including: a substrate rotation step of rotating a substrate held by a substrate holding unit about a rotation axis passing through a central portion of the substrate; an outer peripheral portion processing step of, in parallel with the substrate rotation step, discharging a processing liquid from a discharge port arranged on an inner side in a radius direction of the rotation of the substrate to a liquid landing position provided at a surface outer peripheral portion of the substrate, and processing the surface outer peripheral portion with the processing liquid, with respect to the liquid landing position; a height strain acquisition step of acquiring a height strain of the surface outer peripheral portion of the substrate; and an inner peripheral position adjustment step of adjusting an inner peripheral position of the processing liquid supplied to the liquid landing position based on the height strain acquired by the height strain acquisition step, while keeping constant a discharge direction of the processing liquid discharged from the discharge port.

[0014] According to this method, the inner peripheral position of the processing liquid (hereinafter, sometimes referred to simply as "liquid landing processing liquid") supplied to the liquid landing position is adjusted based on the acquired height strain of the surface outer peripheral portion. Therefore, the inner peripheral position of the liquid landing processing liquid can be adjusted to a position corresponding to the warping condition of the substrate. By this adjustment, the width of the liquid film (hereinafter, referred to simply as "liquid width") formed by the liquid landing processing liquid can be precisely controlled.

[0015] In addition, since the inner peripheral position of the liquid landing processing liquid is adjusted while keeping constant the discharge direction of the processing liquid, the incident angle at the time when the processing liquid discharged from the discharge port is incident on the liquid landing position can be continuously kept to an angle in the vicinity of the optimal angle at which the performance of the fine particles is high. Therefore, the adhesion of fine particles to the surface outer peripheral portion of the substrate after the outer peripheral portion processing can be inhibited or prevented.

[0016] Thus, a substrate processing method capable of precisely controlling the processing width at the surface peripheral portion of the substrate and capable of suppressing or preventing the attachment of particles to the surface peripheral portion of the substrate after the peripheral portion processing can be provided.

[0017] The height strain acquisition process includes at least one of a "before processing" height strain acquisition process of acquiring the height strain of the surface peripheral portion of the substrate before the processing liquid discharged from the discharge port is supplied to the surface peripheral portion of the substrate, and a "during processing" height strain acquisition process of acquiring the height strain of the surface peripheral portion of the substrate while the processing liquid is discharged from the discharge port to the surface peripheral portion of the substrate.

[0018] Also, the inner peripheral position adjustment process includes at least one of a "before processing" inner peripheral position adjustment process of adjusting the inner peripheral position of the processing liquid supplied to the liquid landing position based on the height strain acquired by the height strain acquisition process while keeping the discharge direction of the processing liquid discharged from the discharge port constant before the processing liquid discharged from the discharge port is supplied to the surface peripheral portion of the substrate, and a "during processing" inner peripheral position adjustment process of adjusting the inner peripheral position of the processing liquid supplied to the liquid landing position based on the height strain acquired by the height strain acquisition process while keeping the discharge direction of the processing liquid discharged from the discharge port constant while the processing liquid is discharged from the discharge port to the surface peripheral portion of the substrate.

[0019] In one embodiment of the present application, the inner peripheral position adjustment process includes a process of moving the liquid landing position in a moving direction intersecting with the tangential direction at the liquid landing position while keeping the discharge direction constant.

[0020] According to this method, the liquid landing position is moved in the moving direction based on the acquired height strain of the surface peripheral portion. By the movement of the liquid landing position in the moving direction, the inner peripheral position of the liquid processing liquid can be adjusted relatively easily. Thus, the precise control of the inner peripheral position of the liquid processing liquid can be achieved relatively easily.

[0021] In one embodiment of the present application, the inner peripheral position adjustment process includes a process of changing the flow rate of the processing liquid discharged from the discharge port while keeping the discharge direction constant.

[0022] According to this method, the discharge flow rate of the processing liquid is changed based on the acquired height strain of the surface peripheral portion. By the change of the discharge flow rate of the processing liquid, the inner peripheral position of the liquid processing liquid can be adjusted relatively easily. Thus, the precise control of the inner peripheral position of the liquid processing liquid can be achieved relatively easily.

[0023] In one embodiment of the present invention, the inner periphery position adjustment process includes a process of changing a flow rate of the gas sprayed toward the processing liquid sprayed at the surface outer periphery portion from the inside in the radial direction of the substrate while keeping the discharge direction constant.

[0024] According to this method, the flow rate of the gas sprayed toward the processing liquid is changed based on the height strain of the surface outer periphery portion obtained. By changing the flow rate, the inner periphery position of the processing liquid can be adjusted relatively easily. Thus, the inner periphery position of the processing liquid can be controlled precisely relatively easily.

[0025] In one embodiment of the present invention, the height strain obtaining process includes a process of obtaining an average of the height strain at a plurality of positions in the surface outer periphery portion separated in the circumferential direction of the substrate as the height strain of the surface outer periphery portion of the substrate.

[0026] The warping condition and the warping direction of the substrate held by the substrate holding unit sometimes vary in the circumferential direction of the substrate.

[0027] According to this method, the average of the height strain at a plurality of positions in the circumferential direction of the surface outer periphery portion is obtained as the height strain of the surface outer periphery portion of the substrate. Thus, even in the case where the warping condition and the warping direction of the substrate vary in the circumferential direction of the substrate, an optimum value can be obtained as the height strain of the surface outer periphery portion.

[0028] In one embodiment of the present invention, the substrate processing method further includes a substrate heating process of heating at least the outer periphery portion of the substrate in parallel with the substrate rotating process and the outer periphery portion processing process, and the height strain obtaining process includes a process of obtaining a height strain caused by warping of the substrate accompanying the progress of the substrate heating process.

[0029] According to this method, a height strain caused by warping of the substrate accompanying the progress of the substrate heating process is obtained. The warping of the substrate changes as the progress of the substrate heating process, that is, as the time during which the substrate is heated increases. The height strain of the surface outer periphery portion of the substrate also changes as the progress of the substrate heating process. Based on such a height strain, the inner periphery position of the processing liquid is adjusted.

[0030] As the progress of the substrate heating process, the warping amount of the substrate increases and the height strain changes (for example, increases). Even in the case where the height strain changes due to heating of the substrate, as long as the inner periphery position of the processing liquid is adjusted based on the obtained height strain, the inner periphery position of the processing liquid can be kept at a desired position regardless of the increase in the warping of the substrate. Thus, the inner periphery position of the processing liquid can be controlled precisely favorably.

[0031] In one embodiment of the present application, the substrate heating step includes a heater arrangement step of arranging a heater at a heating position at which the substrate is heated at least by radiation heat from the back surface side of the substrate.

[0032] According to this method, the heater is arranged at the heating position, and the substrate is heated at least by radiation heat from the back surface side of the substrate. Thus, the processing rate at the outer peripheral portion of the surface of the substrate can be improved.

[0033] In one embodiment of the present application, the height strain acquisition step includes a height strain monitoring step of monitoring the height strain of the outer peripheral portion of the surface in parallel with the substrate heating step. Also, the inner peripheral position adjustment step includes a step of adjusting the inner peripheral position based on the monitoring result of the height strain in the height strain monitoring step in parallel with the substrate rotation step and the outer peripheral portion processing step.

[0034] According to this method, in the outer peripheral portion processing step, the height strain of the outer peripheral portion of the surface is monitored. Also, based on the monitoring result of the height strain, the inner peripheral position of the liquid processing liquid is adjusted. That is, the inner peripheral position of the liquid processing liquid can be adjusted in real time according to the change in the height strain of the outer peripheral portion of the surface. The inner peripheral position of the liquid processing liquid is adjusted based on the actual measurement, and thus the inner peripheral position of the liquid processing liquid can be adjusted with high accuracy.

[0035] In one embodiment of the present application, the height strain acquisition step includes a heating height strain calculation step of calculating the height strain of the outer peripheral portion of the surface based on the elapsed time from the start of the substrate heating step. Also, the inner peripheral position adjustment step includes a step of adjusting the inner peripheral position based on the height strain calculated by the heating height strain calculation step.

[0036] According to this method, the height strain of the outer peripheral portion of the surface is calculated based on the elapsed time from the start of the substrate heating step. That is, in the outer peripheral portion processing step, it is not necessary to monitor the height strain of the outer peripheral portion of the surface in advance. That is, the inner peripheral position of the liquid processing liquid can be adjusted with high accuracy without measuring the height strain of the outer peripheral portion of the surface in the outer peripheral portion processing step.

[0037] In one embodiment of the present application, the heating height strain calculation step includes a step of calculating the height strain with reference to a correspondence relation between the elapsed time from the start of the substrate heating step and the height strain of the outer peripheral portion of the surface.

[0038] According to the method, the height strain of the surface peripheral portion is calculated by referring to the correspondence relationship. Thus, the height strain of the surface peripheral portion can be obtained without measuring the height strain of the surface peripheral portion.

[0039] In one embodiment of the present invention, the correspondence relationship is obtained by experiment using a substrate processing apparatus that implements the substrate processing method.

[0040] According to the method, the correspondence relationship is obtained by experiment using a substrate processing apparatus that implements the substrate processing method. Thus, the height strain of the surface peripheral portion can be further obtained with good accuracy.

[0041] In one embodiment of the present invention, the substrate holding unit includes a unit that holds the substrate in contact with the central portion of the substrate without contacting the peripheral portion of the substrate.

[0042] According to the method, the central portion of the substrate is supported by the substrate holding unit, not the peripheral portion of the substrate. Even if the peripheral portion of the substrate is displaced in the up-down direction, if the peripheral portion of the substrate is supported by the substrate holding unit, the magnitude of displacement of the peripheral portion of the substrate is somewhat mitigated by the support of the substrate holding unit. However, in the case where the central portion of the substrate is supported by the substrate holding unit, the magnitude of displacement of the peripheral portion of the substrate is not mitigated by the support of the substrate holding unit.

[0043] Even in this case, by keeping the discharge direction constant while adjusting the inner peripheral position of the liquid processing liquid based on the obtained height strain of the surface peripheral portion, the processing width at the surface peripheral portion of the substrate can be precisely controlled, and the attachment of particles to the surface peripheral portion of the substrate after the processing of the peripheral portion can be suppressed or prevented.

[0044] Another embodiment of the present invention provides a substrate processing apparatus including: a substrate holding unit that holds a substrate; a substrate rotating unit that rotates the substrate held by the substrate holding unit around a rotation axis that passes through the central portion of the substrate; a processing liquid nozzle that has a discharge port configured to be located on the inner side of the substrate in the radial direction of the rotation of the substrate with respect to the surface peripheral portion of the substrate held by the substrate holding unit; a processing liquid supply unit that supplies a processing liquid to the processing liquid nozzle; a height strain acquisition unit that acquires a height strain of the surface peripheral portion of the substrate; an inner peripheral position adjustment unit that adjusts the inner peripheral position of a processing liquid supplied to a liquid landing position provided at the surface peripheral portion of the substrate, i.e., a liquid landing processing liquid; and a control device that controls the substrate rotating unit, the processing liquid supply unit, the height strain acquisition unit, and the inner peripheral position adjustment unit.

[0045] The control device executes: a substrate rotation process of rotating the substrate held by the substrate holding unit around the rotation axis by the substrate rotation unit; a peripheral portion treatment process of discharging a treatment liquid from the discharge port to the liquid landing position to treat the surface peripheral portion of the substrate with the treatment liquid in parallel with the substrate rotation process; a height strain acquisition process of acquiring the height strain of the surface peripheral portion of the substrate by the height strain acquisition unit; and an inner peripheral position adjustment process of adjusting the inner peripheral position of the treatment liquid (i.e., the liquid landing treatment liquid) supplied to the liquid landing position by the inner peripheral position adjustment unit based on the height strain acquired by the height strain acquisition process while keeping the discharge direction of the treatment liquid discharged from the discharge port constant.

[0046] According to this structure, the inner peripheral position of the liquid landing treatment liquid is adjusted based on the acquired height strain of the surface peripheral portion. Therefore, the inner peripheral position of the liquid landing treatment liquid can be adjusted to a position corresponding to the warping condition of the substrate. By this adjustment, the liquid width can be precisely controlled.

[0047] In addition, the inner peripheral position of the liquid landing treatment liquid is adjusted while keeping the discharge direction of the treatment liquid constant. Therefore, the angle of incidence of the treatment liquid discharged from the discharge port when incident on the liquid landing position can be continuously kept to an angle near the optimum angle of high particle performance. Therefore, the attachment of particles to the surface peripheral portion of the substrate after the peripheral portion treatment can be suppressed or prevented.

[0048] Thus, a substrate processing device capable of precisely controlling the treatment width at the surface peripheral portion of the substrate and suppressing or preventing the attachment of particles to the surface peripheral portion of the substrate after the peripheral portion treatment can be provided.

[0049] The above or further other objects, features and effects of the present application will become more apparent from the following description of the embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF DRAWINGS

[0050] Figure 1 is a diagrammatical plan view for explaining the internal layout of the substrate processing device of the first embodiment of the present application.

[0051] Figure 2 is a diagrammatical sectional view for explaining a structure example of a processing unit possessed by the substrate processing device.

[0052] Figure 3 is a sectional view showing a state where a treatment liquid is discharged from a treatment liquid nozzle to the upper surface peripheral portion of a substrate.

[0053] Figure 4 is a sectional view showing a first mode of warping generated in a substrate to be held by a spin chuck.

[0054] Figure 5 is a sectional view showing a second mode of warping that should be generated in a substrate held by the rotary chuck.

[0055] Figures 6A-6C is a view showing a third mode of warping that should be generated in a substrate held by the rotary chuck.

[0056] Figure 7 is a sectional view showing a state in which a processing liquid is discharged from a processing liquid nozzle toward an upper surface outer periphery portion of a substrate exhibiting a first mode.

[0057] Figure 8 is a sectional view showing a state in which a processing liquid is discharged from a processing liquid nozzle toward an upper surface outer periphery portion of a substrate exhibiting a second mode.

[0058] Figure 9 is a plan view showing a main portion of a processing width of an upper surface outer periphery portion of a substrate.

[0059] Figure 10 is a block diagram for describing an electrical structure of a main portion of the substrate processing apparatus.

[0060] Figure 11 is a flowchart for describing a substrate processing example performed by the processing unit.

[0061] Figure 12 is a schematic view for describing contents of a process before the outer periphery portion etching process shown in Figure 11

[0062] is a schematic view for describing contents of the outer periphery portion etching process. Figure 13

[0063] is a flowchart for describing contents of a height strain measurement process shown in Figure 14A Figure 11 is a flowchart for describing contents of a height strain monitoring process and a liquid landing position moving process shown in

[0064] Figure 14B Figure 11 is a sectional view showing an example of a discharge state of an etching liquid in the outer periphery portion etching process.

[0065] Figure 15 is a sectional view showing another example of a discharge state of an etching liquid in the outer periphery portion etching process.

[0066] Figure 16 is a sectional view showing another example of a discharge state of an etching liquid in the outer periphery portion etching process.

[0067] Figure 17 ​​is a block diagram for explaining an electrical structure of a main part of the substrate processing apparatus of the second embodiment of the present application.

[0068] Figure 18 is a diagram showing the contents of the heating time-height strain correspondence table stored in the heating time-height strain correspondence table storage section shown in Figure 17

[0069] Figure 19 is a flowchart for explaining a substrate processing example performed by the processing unit of the second embodiment.

[0070] Figure 20 is a flowchart for explaining Figure 19

[0071] Figure 21 is a sectional view for explaining the first modification example of the droplet landing position moving step.

[0072] Figure 22 is a sectional view for explaining the first modification example of the droplet landing position moving step.

[0073] Figure 23 is a sectional view showing one example of the discharge state of the etching liquid in the outer peripheral portion etching step performed in the substrate processing apparatus of the third embodiment.

[0074] Figure 24 is a sectional view showing one example of the discharge state of the etching liquid in the outer peripheral portion etching step performed in the substrate processing apparatus of the third embodiment.

[0075] Figure 25 is a sectional view showing one example of the discharge state of the etching liquid in the outer peripheral portion etching step performed in the substrate processing apparatus of the fourth embodiment.

[0076] Figure 26 is a sectional view showing one example of the discharge state of the etching liquid in the outer peripheral portion etching step performed in the substrate processing apparatus of the fourth embodiment.

[0077] Figure 27 is a sectional view showing one example of the discharge state of the etching liquid in the outer peripheral portion etching step performed in the substrate processing apparatus of the fourth embodiment.

[0078] Figure 28 is a sectional view for explaining the second modification example of the droplet landing position moving step.

[0079] Figure 29 ​​is a sectional view for describing a second modification of the liquid application position moving process.

[0080] Figure 30 is a diagram showing a modification of the height strain sensor. DETAILED DESCRIPTION

[0081] Figure 1 is a diagrammatical plan view for describing an internal layout of a substrate processing apparatus of a first embodiment of the present application. The substrate processing apparatus 1 is a single-wafer type apparatus that processes a circular plate-like substrate W such as a semiconductor wafer, one piece at a time, using a processing liquid and / or a processing gas.

[0082] The substrate processing apparatus 1 includes a plurality of processing units 2 that process the substrate W using a processing liquid, a load port LP that places a carrier C that accommodates a plurality of substrates W processed by the processing units 2, a conveyance robot IR and a conveyance robot CR that convey the substrate W between the load port LP and the processing units 2, and a control apparatus 3 that controls the substrate processing apparatus 1. The conveyance robot IR conveys the substrate W between the carrier C and the conveyance robot CR. The conveyance robot CR conveys the substrate W between the conveyance robot IR and the processing units 2. The plurality of processing units 2 have, for example, the same structure.

[0083] Figure 2 is a diagrammatical sectional view for describing a structure example of the processing unit 2. Figure 3 is a sectional view showing a state in which a processing liquid is discharged from a processing liquid nozzle 6 disposed at a processing position.

[0084] As Figure 2 shown, the processing unit 2 is a unit that processes (top side processing) an outer peripheral portion 101 (see Figure 3 , etc.) of the substrate W, more specifically, an outer peripheral portion 101 of an upper surface (a surface (a device formation surface)) of the substrate W (hereinafter, referred to as "an upper surface outer peripheral portion 102" (a surface outer peripheral portion). See Figure 3 , etc.) of the substrate W, and a peripheral end surface 103 (see Figure 3 , etc.) of the substrate W, with a processing liquid (for example, a chemical liquid and a rinse liquid). In this embodiment, the outer peripheral portion 101 includes the upper surface outer peripheral portion 102, the peripheral end surface 103 of the substrate W, and an outer peripheral portion of a lower surface (a back surface (a non-device formation surface)) of the substrate W. In addition, in this embodiment, the upper surface outer peripheral portion 102 refers to, for example, a ring-like region having a width of several millimeters or so from the peripheral end surface 103 of the substrate W in the outer peripheral portion of the upper surface of the substrate W.

[0085] As Figure 2As shown, the processing unit 2 includes: a box-shaped processing chamber 4 having an internal space; a spin chuck (substrate holding unit) 5 that holds a substrate W in a horizontal posture within the processing chamber 4 and rotates the substrate W about a vertical rotation axis Al passing through the center of the substrate W; a processing liquid nozzle 6 for discharging a processing liquid to an upper surface peripheral portion 102 of the substrate W held by the spin chuck 5; an etching liquid supply unit (processing liquid supply unit) 7 for supplying an etching liquid, which is one example of a chemical liquid, to the processing liquid nozzle 6; a rinse liquid supply unit (processing liquid supply unit) 8 for supplying a rinse liquid to the processing liquid nozzle 6; a shielding member 9 disposed above the substrate W held by the spin chuck 5; a heating plate (heater) 10 disposed below the substrate W held by the spin chuck 5; a cylindrical processing cup 11 that surrounds the side of the spin chuck 5; and a height strain sensor 12 for measuring a height strain HD (height position) of the upper surface peripheral portion 102 of the substrate W held by the spin chuck 5 with respect to an upper surface central portion (in this case, the vicinity of the center of the substrate W).

[0086] As shown, the processing chamber 4 includes: a partition wall 13 in a box shape; an FFU (fan filter unit) 14 as an air supply unit that supplies clean air into the processing chamber 4 from the upper portion of the partition wall 13; and an exhaust device (not shown) that exhausts gas in the processing chamber 4 from the lower portion of the partition wall 13. Figure 2 As shown, the FFU 14 is disposed above the partition wall 13 and is installed on the top portion of the partition wall 13. The FFU 14 supplies clean air into the processing chamber 4 from the top portion of the partition wall 13. The exhaust device is connected to the bottom portion of the processing cup 11 via an exhaust duct 15 connected to the inside of the processing cup 11 and sucks the inside of the processing cup 11 from the bottom portion of the processing cup 11. By the FFU 14 and the exhaust device, a down flow (downward flow) is formed in the processing chamber 4.

[0087] Figure 2 As shown, the FFU 14 is disposed above the partition wall 13 and is installed on the top portion of the partition wall 13. The FFU 14 supplies clean air into the processing chamber 4 from the top portion of the partition wall 13. The exhaust device is connected to the bottom portion of the processing cup 11 via an exhaust duct 15 connected to the inside of the processing cup 11 and sucks the inside of the processing cup 11 from the bottom portion of the processing cup 11. By the FFU 14 and the exhaust device, a down flow (downward flow) is formed in the processing chamber 4.

[0088] As shown, the FFU 14 is disposed above the partition wall 13 and is installed on the top portion of the partition wall 13. The FFU 14 supplies clean air into the processing chamber 4 from the top portion of the partition wall 13. The exhaust device is connected to the bottom portion of the processing cup 11 via an exhaust duct 15 connected to the inside of the processing cup 11 and sucks the inside of the processing cup 11 from the bottom portion of the processing cup 11. By the FFU 14 and the exhaust device, a down flow (downward flow) is formed in the processing chamber 4. Figure 2 ​As shown, in this embodiment, the rotary chuck 5 is a vacuum suction chuck. The rotary chuck 5 suctions and supports the central portion of the lower surface of the substrate W. The rotary chuck 5 includes a vertically extending rotation shaft 16, a rotation base 17 mounted on the upper end of the rotation shaft 16 and horizontally suctioning and holding the lower surface of the substrate W, and a rotary motor (substrate rotation unit) 18 having a rotation shaft coaxially coupled to the rotation shaft 16. The rotation base 17 includes a horizontally circular upper surface 17a having an outer diameter smaller than the outer diameter of the substrate W. The central portion of the lower surface of the substrate W is placed on the upper surface 17a such that the center of the substrate W coincides with the center of the upper surface 17a. With the lower surface of the substrate W, corresponding to the back surface of the substrate W, suctioned and held on the rotation base 17, the outer periphery 101 of the substrate W extends further outward than the peripheral edge of the rotation base 17. The rotary motor 18 is driven, thereby rotating the substrate W about the central axis of the rotation shaft 16.

[0089] like Figure 2 As shown, the processing liquid nozzle 6 is, for example, a straight nozzle that discharges liquid in a continuous flow state. The processing liquid nozzle 6 is a scanning nozzle capable of changing the liquid contact position on the upper surface of the substrate W. The processing liquid nozzle 6 is mounted at the front end of a nozzle arm 40 that extends approximately horizontally. An arm moving unit (outlet position moving unit, inner circumferential position adjustment unit) 41 is incorporated into the nozzle arm 40, which causes the nozzle arm 40 to swing about a vertical swing axis provided on the side of the rotating chuck 5. The arm moving unit 41 is, for example, a servo motor. Driven by the arm moving unit 41, the nozzle arm 40 can swing in a horizontal plane about the swing axis, thereby enabling the processing liquid nozzle 6 to rotate. Due to the rotation of the processing liquid nozzle 6, at the outer circumference 102 of the upper surface, the processing liquid nozzle 6 moves along the rotational radius direction RD of the substrate W (a direction orthogonal to the rotation axis A1, hereinafter referred to as "radial RD").

[0090] like Figure 3 As shown, the processing liquid nozzle 6 discharges processing liquid from the liquid-receiving position (hereinafter referred to as "liquid-receiving position 105") within the outer periphery 102 of the upper surface. The discharge port 6a of the processing liquid nozzle 6 is disposed inside the liquid-receiving position 105 in the radial direction RD. Therefore, the processing liquid nozzle 6 discharges processing liquid (chemical solution or rinsing liquid) downward in a discharge direction extending obliquely outward from the discharge port 6a toward the liquid-receiving position 105. The upper surface of the substrate W is the device formation surface for device formation, and the circular region within the upper surface of the substrate W, surrounded by the annular outer periphery 102 of the upper surface, is the device formation region for device formation. Since the processing liquid is discharged from the inner side of the radial direction RD toward the liquid-receiving position 105, liquid splashing of the processing liquid into the device formation region can be suppressed or prevented.

[0091] The direction in which the processing liquid is discharged from the discharge port 6a is a direction along the radial direction RD in a plan view and a direction in which the processing liquid is incident on the upper surface of the substrate W at a prescribed angle (incident angle). As the incident angle, an optimum angle is determined by experiments or the like. The direction in which the processing liquid is discharged from the discharge port 6a is set so that, in the case where the substrate W is held by the rotary chuck 5 without warping, the incident angle becomes the optimum angle. In this embodiment, the processing liquid nozzle 6 cannot change its posture. Even if warping of the substrate W exists, the amount is small. Therefore, the angle (incident angle) at which the processing liquid is incident on the liquid landing position 105 is constant regardless of warping of the substrate W.

[0092] After the processing liquid discharged from the processing liquid nozzle 6 hits the liquid landing position 105, the processing liquid is diffused radially from the liquid landing position 105 along the upper surface of the substrate W. In the case where the substrate W is rotated, the processing liquid diffused radially from the liquid landing position 105 flows along the upper surface of the substrate W while diffusing to the outside in the radial direction RD of the substrate W and to the downstream in the rotation direction R of the substrate W. Thus, a liquid film LF of the processing liquid in a circular ring shape is formed on the upper surface peripheral portion 102 and held on the upper surface peripheral portion 102.

[0093] The width W1 (hereinafter referred to as "liquid width W1") of the liquid film LF of the processing liquid refers to the length in the radial direction RD of the substrate W from the innermost position in the radial direction RD to the peripheral end surface 103 of the substrate W in the region where the liquid film LF of the processing liquid is in contact with the upper surface of the substrate W. The liquid width W1 corresponds to the processing width. The inner peripheral position (liquid-landing processing liquid inner peripheral position) LFa of the liquid film LF of the processing liquid refers to the innermost position in the radial direction RD in the region where the liquid film LF of the processing liquid is in contact with the upper surface of the substrate W. The inner peripheral position LFa is disposed on a circumference at a constant distance from the rotation axis Al in the radial direction RD.

[0094] The inner peripheral position (liquid-landing processing liquid inner peripheral position) LFa of the liquid film LF of the processing liquid and the liquid width W1 vary depending on the liquid landing position 105. That is, when the liquid landing position 105 is moved to the outside in the radial direction RD, the inner peripheral position LFa is moved to the outside in the radial direction RD and the liquid width W1 is decreased. When the liquid landing position 105 is moved to the inside in the radial direction RD, the inner peripheral position LFa is moved to the inside in the radial direction RD and the liquid width W1 is increased. Therefore, by controlling the liquid landing position 105 with high precision, the inner peripheral position LFa and the liquid width W1 can be controlled with high precision, and further the processing width can be controlled with high precision.

[0095] As Figure 2As shown in FIG. 1, the etching liquid supply unit 7 includes an etching liquid pipe 20 connected to the processing liquid nozzle 6, for supplying etching liquid from an etching liquid supply source to the processing liquid nozzle 6, and an etching liquid valve 21 interposed in a middle portion of the etching liquid pipe 20, for opening and closing the etching liquid pipe 20. As the etching liquid supplied from the etching liquid supply source, dilute hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF) are used. In addition, as the etching liquid, concentrated hydrofluoric acid (conc HF), fluoboric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), ammonium fluoride, etc. can also be used.

[0096] As shown in FIG. 1, the etching liquid supply unit 7 includes an etching liquid pipe 20 connected to the processing liquid nozzle 6, for supplying etching liquid from an etching liquid supply source to the processing liquid nozzle 6, and an etching liquid valve 21 interposed in a middle portion of the etching liquid pipe 20, for opening and closing the etching liquid pipe 20. As the etching liquid supplied from the etching liquid supply source, dilute hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF) are used. In addition, as the etching liquid, concentrated hydrofluoric acid (conc HF), fluoboric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), ammonium fluoride, etc. can also be used. Figure 2 As shown in FIG. 1, the etching liquid supply unit 7 includes an etching liquid pipe 20 connected to the processing liquid nozzle 6, for supplying etching liquid from an etching liquid supply source to the processing liquid nozzle 6, and an etching liquid valve 21 interposed in a middle portion of the etching liquid pipe 20, for opening and closing the etching liquid pipe 20. As the etching liquid supplied from the etching liquid supply source, dilute hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF) are used. In addition, as the etching liquid, concentrated hydrofluoric acid (conc HF), fluoboric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), ammonium fluoride, etc. can also be used.

[0097] If the etching liquid valve 21 is opened in a state where the rinse liquid valve 23 is closed, the etching liquid supplied from the etching liquid pipe 20 to the processing liquid nozzle 6 is discharged from the discharge port 6a (refer to FIG. 1) provided in the lower end of the processing liquid nozzle 6. Note that if the rinse liquid valve 23 is opened in a state where the etching liquid valve 21 is closed, the rinse liquid supplied from the rinse liquid pipe 22 to the processing liquid nozzle 6 is discharged from the discharge port 6a. Figure 3

[0098] As shown in FIG. 1, the etching liquid supply unit 7 includes an etching liquid pipe 20 connected to the processing liquid nozzle 6, for supplying etching liquid from an etching liquid supply source to the processing liquid nozzle 6, and an etching liquid valve 21 interposed in a middle portion of the etching liquid pipe 20, for opening and closing the etching liquid pipe 20. As the etching liquid supplied from the etching liquid supply source, dilute hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF) are used. In addition, as the etching liquid, concentrated hydrofluoric acid (conc HF), fluoboric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), ammonium fluoride, etc. can also be used. Figure 2 Figure 3 As shown in FIG. 1, the etching liquid supply unit 7 includes an etching liquid pipe 20 connected to the processing liquid nozzle 6, for supplying etching liquid from an etching liquid supply source to the processing liquid nozzle 6, and an etching liquid valve 21 interposed in a middle portion of the etching liquid pipe 20, for opening and closing the etching liquid pipe 20. As the etching liquid supplied from the etching liquid supply source, dilute hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF) are used. In addition, as the etching liquid, concentrated hydrofluoric acid (conc HF), fluoboric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), ammonium fluoride, etc. can also be used.

[0099] The shut-off plate 24 has an outer diameter smaller than that of the substrate W. The shut-off plate 24 has a circular substrate opposing surface 24a on the lower surface thereof, which opposes the upper surface of the substrate W. A cylindrical through-hole 24b is formed in the central portion of the substrate opposing surface 24a, which penetrates the shut-off plate 24 in the up-down direction. The upper surface nozzle 25 is inserted into the through-hole 24b. Since the diameter of the shut-off plate 24 is smaller than that of the substrate W, in a state where the shut-off plate 24 is brought close to the upper surface of the substrate W, the central portion of the upper surface of the substrate W is covered with the shut-off plate 24, but the outer peripheral portion 102 of the upper surface is exposed.

[0100] ​​The upper surface nozzle 25 is integrally and movably mounted on the baffle plate 24. The upper surface nozzle 25 has an outlet 25a at its lower end, opposite to the center of the upper surface of the substrate W held in the rotating chuck 5. A gas pipe 28 is connected to the upper surface nozzle 25. A gas valve 29 is installed in the gas pipe 28 to open and close it. The gas supplied to the gas pipe 28 is a dehumidified gas, particularly a non-reactive gas. Non-reactive gases include, for example, nitrogen and argon. By opening the gas valve 29, non-reactive gas is supplied to the upper surface nozzle 25. As a result, the non-reactive gas is discharged downwards from the outlet 25a and blown onto the surface of the substrate W. Alternatively, the gas can also be a reactive gas such as air.

[0101] like Figure 2 As shown, the blocking member 9 is equipped with a blocking member lifting unit 27, which includes a motor, ball screw, etc. The blocking member lifting unit 27 moves the blocking plate 24 and the upper surface nozzle 25 up and down in the vertical direction V. The blocking member lifting unit 27 moves the blocking member 9 up and down between a blocking position and a retracting position. The blocking position is when the substrate-facing surface 24a is close to the center of the upper surface of the substrate W held in the rotating chuck 5. Figure 13 The position shown is a position that is significantly higher than the blocking position. Figure 2 and Figure 12 (as shown in the diagram). The blocking member lifting unit 27 can hold the blocking plate 24 in both the blocking position and the retracted position. The blocking position of the blocking member 9 is the position where a blocking space is formed between the substrate opposing surface 24a and the surface of the substrate W. This blocking space is not completely isolated from its surrounding space, but rather no fluid (gas or liquid) flows into the blocking space from the surrounding space. That is, the blocking space is substantially blocked from its surrounding space.

[0102] like Figure 2 As shown, the heating plate 10 is formed in an annular shape and is arranged to surround the outer periphery of the rotating chuck 5. The heating plate 10 has an upper surface 10a. The heating plate 10 has an outer diameter equal to the outer diameter of the substrate W. The outer periphery of the upper surface 10a of the heating plate 10 is opposite to all areas of the outer periphery of the lower surface of the substrate W held in the rotating chuck 5. A built-in heater 31 is built into the heating plate 10. The built-in heater 31 is a heater that generates Joule heat, such as an electric heating wire that heats up by being energized. The heating plate 10 does not rotate even when the rotating chuck 5 rotates. The temperature of the upper surface 10a of the heating plate 10 is uniform in-plane. The outer periphery 101 of the substrate W is uniformly heated by radiant heat from the heating plate 10. By using the heating plate 10 to heat the outer periphery 101 of the substrate W from the lower surface side of the substrate W, the processing rate (etching rate (amount etched per unit time)) at the outer periphery 102 of the upper surface can be increased.

[0103] As Figure 2 shown, a heating plate lift unit (heater moving unit) 32 for lifting the heating plate 10 while maintaining the heating plate 10 in a horizontal posture is incorporated in the heating plate 10. The heating plate lift unit 32 is constituted by, for example, a ball screw and a motor. By driving the heating plate lift unit 32, the heating plate 10 is capable of being lifted between a heating position (position shown in Figure 13 ) at which the upper surface 10a approaches the outer peripheral portion of the lower surface of the substrate W and a retreat position (position shown in Figure 12 ) provided at a position lower than the heating position. The heating plate lift unit 32 is capable of holding the heating plate 10 at both the heating position and the retreat position.

[0104] In a state in which the heating plate 10 is disposed at the heating position, the radiant heat from the heating plate 10 reaches the outer peripheral portion 101 of the substrate W, and the outer peripheral portion 101 is heated. On the other hand, in a state in which the heating plate 10 is disposed at the retreat position, the radiant heat from the heating plate 10 hardly reaches the outer peripheral portion 101 of the substrate W, and the outer peripheral portion 101 is not heated by the heating plate 10. In addition, by lifting the heating plate 10, the interval between the upper surface 10a and the lower surface of the substrate W is changed.

[0105] As Figure 2 shown, the process cup 11 is disposed at a position outward (in a direction away from the rotation axis Al) of the substrate W held by the rotary chuck 5. The process cup 11 surrounds the rotary base 17. In a state in which the rotary chuck 5 rotates the substrate W, when the process liquid is supplied to the substrate W, the process liquid supplied to the substrate W is flung to the periphery of the substrate W. In the supply of the process liquid to the substrate W, the upper end portion 11a of the process cup 11 opened upward (refer to Figure 2 ) is disposed at a position upward of the rotary base 17. Therefore, the process liquid such as etching liquid and rinse liquid discharged to the periphery of the substrate W is caught by the process cup 11. Then, the process liquid caught by the process cup 11 is subjected to a drain treatment.

[0106] As Figure 2 shown, in the present embodiment, the height strain sensor 12 includes a height position sensor that detects the height position of the upper surface outer peripheral portion 102. The height strain sensor 12 is, for example, a reflection type photoelectric sensor including a light projecting portion and a light receiving portion. The light projected from the light projecting portion is reflected by the upper surface outer peripheral portion 102, and the reflected light is received by the light receiving portion. The height strain sensor 12 measures the height position of the upper surface outer peripheral portion 102 based on the amount of light entering the light receiving portion. The height strain sensor 12 is mounted to the front end portion of a sensor arm 33 extending substantially horizontally.

[0107] In the present embodiment, the height strain measuring unit (height strain acquisition unit) that measures the height strain HD (the magnitude of the height strain HD and the direction of the height strain HD) is constituted by the height strain sensor 12 and the control device 3. The height strain HD (refer to Figure 4 , Figure 5 and Figure 6C ) indicates the displacement of the upper surface outer peripheral portion 102 of the substrate W in the up-and-down direction with respect to the upper surface central portion of the substrate W (in this case, the vicinity of the center of the upper surface of the substrate W). The height strain HD includes the magnitude of the height strain HD and the direction of the height strain HD (the up direction and the down direction).

[0108] The sensor arm 33 is provided with an arm moving unit 34 that swings the sensor arm 33 about a vertical swing axis provided to the side of the rotary chuck 5. The arm moving unit 34 is, for example, a servo motor. The sensor arm 33 is swung in the horizontal plane about the swing axis by the driving of the arm moving unit 34, whereby the height strain sensor 12 is able to be moved between a measurement position at which the height strain sensor 12 is opposed to the upper surface outer peripheral portion 102 in the up-and-down direction and a retreat position provided to the side of the rotary chuck 5. The measurement position is set to a position at which the height of the upper surface outer peripheral portion 102 is able to be detected by the height strain sensor 12 even in the case where the magnitude of the height strain HD is large.

[0109] Figure 4 is a sectional view showing a first mode of warping that occurs in the substrate W that is to be held by the rotary chuck 5. Figure 5 is a sectional view showing a second mode of warping that occurs in the substrate W that is to be held by the rotary chuck 5. Figure 6A is a plan view showing a third mode of warping that occurs in the substrate W that is to be held by the rotary chuck 5. Figure 6B is a sectional view of the substrate W along the cut line VIB-VIB shown in Figure 6A . Figure 6C is a sectional view of the substrate W along the cut line VIC-VIC shown in Figure 6A .

[0110] As shown in Figures 4-6C , there are cases in which warping occurs in the substrate W that is to be carried into the processing unit 2. With the large-diametering of the substrate W and the high integration of devices into the substrate W in recent years, warping of the substrate W is gradually becoming significant. In the substrate W in which warping occurs, the outer peripheral portion 101 of the substrate W is displaced in the up-and-down direction V with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W). In the case where the displacement of the upper surface outer peripheral portion 102 of the substrate W with respect to the upper surface central portion is displacement upward as shown in Figure 4 , the height strain HD of the upper surface outer peripheral portion 102 is a positive value. On the other hand, in the case where the displacement of the upper surface outer peripheral portion 102 with respect to the upper surface central portion is displacement downward as shown in Figure 5As shown, the displacement of the outer periphery 102 of the upper surface of the substrate W relative to the center of the upper surface is as follows: Figure 5 When the displacement is downward as shown, the height strain HD of the outer periphery 102 of the upper surface is negative.

[0111] As a warping pattern generated on substrate W, there is a first pattern where substrate W is convex downwards in a bowl shape (refer to...). Figure 4 The second pattern, with the substrate W convex in an upward-convex bowl shape (see reference). Figure 5 In the first embodiment, approximately the entire area of ​​the outer peripheral portion 101 is displaced relative to the central portion of the substrate W (in this case, near the center of the substrate W) toward the surface (device formation surface) side (i.e., upward). In the second embodiment, approximately the entire area of ​​the outer peripheral portion 101 is displaced relative to the central portion of the substrate W (in this case, near the center of the substrate W) toward the back side (the side opposite to the device formation surface) side (i.e., downward).

[0112] Especially in 3D-NAND type vertically stacked memory cell arrays, the load on substrate W is large as it approaches the center. Therefore, in 3D-NAND type, substrate W sometimes exhibits the first state.

[0113] Furthermore, the warping pattern of substrate W is not limited to the first and second bowl-shaped patterns. Among the warping patterns of substrate W, there is also a third pattern where a portion in the circumferential direction is displaced relative to the center of substrate W in the vertical direction V (see [reference]). Figures 6A-6C (So-called potato chip type). The third type also includes a type in which a portion of the outer periphery 101 of the substrate W is displaced relative to the center of the substrate W in one of the directions above and below, while other portions of the outer periphery 101 of the substrate W are displaced relative to the center of the substrate W in the other direction above and below.

[0114] Furthermore, the rotary chuck 5 that holds the substrate W supports the central portion of the substrate W (especially in this embodiment, the region with a small diameter including the center of the substrate W) instead of the outer periphery 101, thus holding the substrate W in this manner. Assuming that the rotary chuck 5 supports the outer periphery 101 of the substrate W instead of the central portion, the warping of the substrate W (i.e., the magnitude of the height strain HD) is somewhat mitigated. However, when the rotary chuck 5 supports the central portion of the substrate W instead of the outer periphery 101, the warping of the substrate W (i.e., the magnitude of the height strain HD) is not mitigated by the support of the rotary chuck 5.

[0115] Furthermore, in the processing unit 2, when the substrate W held in the rotating chuck 5 is heated by the heating plate 10 or the like, as the heating proceeds, that is, as the heating time of the substrate W increases, the amount of warpage generated in the substrate W (i.e., the magnitude of the height strain HD) may increase.

[0116] Figure 7 This is a cross-sectional view showing the state in which processing liquid is discharged from the processing liquid nozzle 6 to the outer periphery 102 of the upper surface of the substrate W exhibiting the first state. Figure 8 This is a cross-sectional view showing the state in which the processing liquid is discharged from the processing liquid nozzle 6 to the outer periphery 102 of the upper surface of the substrate W exhibiting the second state. Figure 9 This is a top view showing the main portion of the processing width of the outer periphery 102 of the upper surface of the substrate W.

[0117] Since the discharge direction of the processing liquid from the processing liquid nozzle 6 is inclined relative to the upper surface of the substrate W, when the outer peripheral portion 101 of the substrate W is displaced in the vertical direction V relative to the central portion of the substrate W (in this case, near the center of the substrate W), the liquid contact position 105 of the processing liquid in the outer peripheral portion 102 of the upper surface changes in the radial direction RD according to the displacement (displacement direction and displacement amount) of the outer peripheral portion 101 of the substrate W.

[0118] Specifically, when the outer periphery 101 of the substrate W is displaced upward relative to the central portion of the substrate W (in this case, near the center of the substrate W) (see reference...) Figure 4 as well as Figure 6B (etc.), such as Figure 7 As shown, compared to the case without such displacement (refer to...) Figure 3 Compared to the reference, the liquid application position 105 is positioned at a location opposite to the peripheral end face 103 of the substrate W. Moreover, the inner peripheral position LFa of the liquid film LF is located closer to the inside, resulting in a liquid width LW (liquid width W2) of the liquid film LF being wider than the desired liquid width W1 (liquid width W2 > liquid width W1).

[0119] On the other hand, when the outer periphery 101 of the substrate W is displaced downward relative to the central portion of the substrate W (in this case, near the center of the substrate W) (see reference...) Figure 5 (etc.), such as Figure 8 As shown, compared to the case without this displacement (refer to...) Figure 3 Compared to the substrate W, the liquid application position 105 is positioned close to the peripheral end face 103 of the substrate W. Moreover, the inner peripheral position LFa of the liquid film LF is located at a relatively outer position, resulting in the liquid width LW (liquid width W3) of the liquid film LF being narrower than the desired liquid width W1 (liquid width W3 < liquid width W1).

[0120] The result, such asFigure 9 As shown, the processing width (i.e., the liquid width LW of the liquid film LF) differs between a case where the outer peripheral portion 101 of the substrate W is displaced upward with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W) (in Figure 9 the processing width is indicated by a double-dot chain line in the middle), a case where the outer peripheral portion 101 of the substrate W is displaced downward with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W) (in Figure 9 the processing width is indicated by a single-dot chain line in the middle), and a case where there is no such displacement (in Figure 9 the processing width is indicated by a broken line in the middle).

[0121] Figure 10 is a block diagram for describing the electrical structure of the main portion of the substrate processing apparatus 1.

[0122] The control device 3 is constituted, for example, by a microcomputer. The control device 3 has an arithmetic unit 51 such as a CPU, a storage unit 52 such as a fixed storage device (not shown), a hard disk drive, and the like, an output unit 53, and an input unit (not shown). The storage unit 52 stores therein a program executed by the arithmetic unit 51.

[0123] The storage unit 52 includes a nonvolatile memory in which data can be electrically rewritten. The storage unit 52 includes a recipe storage section that stores a recipe that specifies the contents of each processing for the substrate W.

[0124] The control device 3 is connected as a control target to the rotary motor 18, the arm moving unit 41, the arm moving unit 34, the built-in heater 31, the heating plate lifting unit 32, the etching liquid valve 21, the rinsing liquid valve 23, the gas valve 29, and the like. The control device 3 controls the operations of the rotary motor 18, the arm moving unit 41, the arm moving unit 34, the built-in heater 31, the heating plate lifting unit 32, and the like. In addition, the control device 3 opens and closes the etching liquid valve 21, the rinsing liquid valve 23, the gas valve 29, and the like. In addition, the detection value of the height strain sensor 12 is input to the control device 3.

[0125] Figure 11 is a flowchart for describing the contents of the substrate processing example of the processing unit 2. Figure 12 is a schematic view for describing the contents of the process before the outer peripheral portion etching process (S5). Figure 13 is a schematic view for describing the contents of the outer peripheral portion etching process (S5). Figure 14A is a flowchart for describing the contents of the height strain measurement process (S4). Figure 14B is a flowchart for describing the contents of the height strain monitoring process (S6) and the liquid landing position moving process (inner peripheral position adjustment process, S7). Figure 15This is a cross-sectional view showing an example of the discharge state of the etching solution in the peripheral etching process (S5). Figure 16 This is a cross-sectional view showing another example of the discharge state of the etching solution in the peripheral etching process (S5).

[0126] Reference Figure 1 , Figure 2 , Figure 10 , Figure 11 The substrate processing example will be described below. See appropriate references. Figure 3 , Figures 12-16 .

[0127] First, the untreated substrate W is moved into the interior of the processing chamber 4. Figure 11 (S1). Specifically, by bringing the hand H of the transport robot CR holding the substrate W into the interior of the processing chamber 4, so that the device forming surface is facing upwards, the substrate W is handed over to the rotary chuck 5. At this time, the processing liquid nozzle 6 and the height strain sensor 12 are positioned in the retracted position, and the heating plate 10 is positioned in the retracted position. The blocking member 9 is also positioned in the retracted position.

[0128] Then, after the substrate W is moved into the interior of the processing chamber 4, the central part of the lower surface (back side) of the substrate W is adsorbed and supported, thereby holding the substrate W by the rotating chuck 5 (substrate rotation process). Figure 11 (S2).

[0129] Next, the control device 3 controls the rotary motor 18 to start rotating the substrate W. Figure 11 (S3).

[0130] Additionally, the control device 3 generates Joule heat through the built-in heater 31, thereby raising the upper surface 10a of the heating plate 10 to a predetermined high temperature and maintaining it at that temperature. At this time, as... Figure 12 As shown, the heating plate 10 is positioned in the retracted position.

[0131] Additionally, the control device 3 controls the arm moving unit 34 to move the height strain sensor 12 from the retracted position to the measuring position. As a result, as... Figure 12 As shown, the height strain sensor 12 is positioned at the measurement location.

[0132] When the substrate W rotates to a specified measurement speed (e.g., 50 rpm to 200 rpm), the control device 3 maintains the rotation speed of the substrate W at the measurement speed while using the height strain sensor 12 to start measuring the height strain HD of the outer periphery of the upper surface 102. Figure 11S4: Height Strain Measurement Process. Specifically, while rotating the substrate W around the rotation axis A1, the control device 3 measures the height strain HD in the region located below the height strain sensor 12 on the outer periphery 102 of the upper surface using the height strain sensor 12. After the measurement of height strain HD begins, when the substrate W completes at least one full rotation (360°), the control device 3 considers that the height strain HD at each part in the circumferential direction has been measured, and ends the measurement of height strain HD.

[0133] Specifically, such as Figure 14A As shown, in the height strain gauge measurement process (S4), the control device 3 uses the height strain sensor 12 to measure the height strain HD (the magnitude and direction of the height strain HD) at various locations on the outer periphery 102 of the upper surface. Figure 14A S11). Then, based on the measurement results, the control device 3 calculates the average height strain HD at each part of the outer periphery 102 of the upper surface, that is, the average height strain (S11). Figure 14A (S12).

[0134] By performing the height strain gauge measurement process (S4), the control device 3 can determine the warpage (height strain HD at various points in the circumferential direction) of the substrate W (the substrate W moved into the processing chamber 4) held in the rotating chuck 5. The execution time of the height strain gauge measurement process (S4) is, for example, about 5 seconds.

[0135] After the high strain gauge measurement process (S4) is completed, the control device 3 controls the rotary motor 18 to accelerate the substrate W to the processing speed.

[0136] Then, when the rotation speed of the substrate W reaches a predetermined processing speed (approximately 300 rpm to approximately 1000 rpm), the control device 3 then performs an outer peripheral etching process (outer peripheral processing process) to etch the outer peripheral portion 101 of the substrate W. Figure 11 In the peripheral etching process (S5), while the substrate W is rotated, etching solution is discharged from the processing solution nozzle 6 to the outer peripheral portion 102 of the upper surface.

[0137] Before the outer peripheral etching process (S5) begins, the control device 3 controls the arm movement unit 41, such as... Figure 13 As shown, move the treatment fluid nozzle 6 from the retracted position to the treatment position. Figure 3 and Figure 13 (as shown in the image). Then, the control device 3 opens the etching solution valve 21 while keeping the rinsing solution valve 23 closed, thereby discharging the etching solution from the outlet 6a of the processing solution nozzle 6. With the discharge of the etching solution, the peripheral etching process (S5) begins.

[0138] Additionally, at the start of the peripheral etching process (S5), the control device 3 controls the heating plate lifting unit 32 to move the heating plate 10 from the retracted position. Figure 12 The position shown rises to the heating position. Figure 13 (as shown in the figure), and hold the heating plate 10 at that heating position (heater configuration process). Thus, the outer periphery 101 of the substrate W is heated by the heating plate 10 (substrate heating process).

[0139] Furthermore, in the peripheral etching process (S5), the control device 3 opens the gas valve 29. This allows gas to be discharged from the outlet 25a. The gas discharged from the upper surface nozzle 25 forms a radial airflow above the substrate W, flowing from the center of the substrate W to the outer periphery 101. This allows for more effective suppression or prevention of the etching solution supplied to the outer periphery 102 of the upper surface of the substrate W from entering the center of the upper surface of the substrate W (device formation area) during the peripheral etching process (S5).

[0140] Additionally, before the outer peripheral etching process (S5) begins, the control device 3 controls the blocking member lifting unit 27 to move the blocking member 9 from the retracted position. Figure 12 The position shown) descends to the blocking position ( Figure 13 The shielding member 9 is held at the position shown in the diagram. Thus, the space above the center of the upper surface of the substrate W is blocked relative to its surroundings by the shielding plate 24 of the shielding member 9. Therefore, during the peripheral etching process (S5), the etchant supplied to the peripheral portion 102 of the upper surface of the substrate W can be effectively suppressed or prevented from entering the center of the upper surface of the substrate W (device formation region). Furthermore, the control device 3 controls the shielding plate rotation unit 26 to rotate the shielding plate 24 in the same direction and at the same speed as the substrate W.

[0141] The substrate W to be moved into processing unit 2 is generated Figures 4-6C In the case of any of the warpages shown, in order to suppress the variation in processing width (etch width) caused by the warpage of the substrate W, before the peripheral etching process (S5), based on the height strain HD of the outer periphery 102 of the upper surface obtained by the height strain gauge measurement process (S4), the processing position (initial processing position) of the processing liquid nozzle 6 is moved radially RD. This allows the inner periphery position LFa of the liquid film LF after the start of the peripheral etching process (S5) to be adjusted close to the desired position.

[0142] Furthermore, due to the heating of the substrate W by the heating plate 10 in the peripheral etching process (S5), the amount of warpage generated on the substrate W (i.e., the magnitude of the height strain HD) may increase. To address this increase in warpage, after the start of the peripheral etching process (S5), the height position (i.e., the height strain HD) of the upper surface peripheral portion 102 is continuously monitored throughout the entire peripheral etching process (S5), and the inner peripheral position LFa of the liquid film LF is adjusted to be close to the desired position based on the monitored height strain HD. That is, the inner peripheral position LFa of the liquid film LF is adjusted in real time based on the current height strain HD of the upper surface peripheral portion 102 (height strain monitoring process (S6) and liquid position movement process (S7)).

[0143] The following is a detailed explanation. For example... Figure 14B As shown, in the height strain monitoring process (S6) and the liquid-coating position movement process (S7), the control device 3 continuously monitors the detection value of the height strain sensor 12. Therefore, the height position at each part of the outer periphery 102 of the upper surface is measured. Figure 14B S16). Specifically, the control device 3 (operation unit 51 (refer to S16) Figure 10 Based on the measured height positions of various parts of the outer periphery 102 of the upper surface and the values ​​pre-stored in the storage unit 52 (refer to...), Figure 10 The height difference of the central part of the upper surface of the substrate W is used to determine the height strain HD (magnitude and direction of height strain HD) at each part of the outer periphery 102 of the upper surface.

[0144] Then, the control device 3 calculates the current average height strain (HD) as the average of the height strains HD at each part of the outer periphery of the upper surface 102, based on the calculated height strains HD at each part of the outer periphery of the upper surface 102. Figure 14B S17: Heating height strain calculation process).

[0145] in addition, Figure 14B In steps S16 and S17, the average height position of each part of the outer periphery 102 of the upper surface can be calculated in advance, i.e., the current average height position. In this case, the average height position can also be calculated based on the average height position and the position pre-stored in the storage unit 52 (see reference). Figure 10 The difference in height position of the central part of the upper surface of the substrate W is used to calculate the average height strain HD at each part of the outer periphery 102 of the upper surface, i.e., the average height strain.

[0146] Then, if the calculated current average height strain is above the threshold ( Figure 14BIn S18, the etching solution nozzle 6 is moved radially RD while keeping the discharge direction of the etching solution discharged from the outlet 6a constant relative to the rotation axis A (S19 in Figure 14). The high strain monitoring process (S6) and the liquid-coating position moving process (S7) are carried out throughout the entire period of the outer peripheral etching process (S5).

[0147] In the peripheral etching process (S5), when the peripheral portion 101 of the substrate W is displaced upward relative to the central portion of the substrate W (in this case, near the center of the substrate W) (see reference...) Figure 4 as well as Figure 6B (etc.), such as Figure 15 As shown, control device 3 and the case without such displacement (refer to...) Figure 3 Compared to the previous position, the position of the treatment fluid nozzle 6 was changed from its original position. Figure 16 The position (shown by the dashed line) is moved radially outward from the outlet RD, while maintaining a constant discharge direction of the etchant from the outlet 6a, and bringing the liquid-attached position 105 close to the peripheral end face 103 of the substrate W. In this case, the control device 3 positions the inner peripheral position LFa of the liquid film LF as if there were no such displacement (see reference). Figure 3 At the same location. As a result, the liquid width LW of the liquid film LF can be maintained as the liquid width W1.

[0148] On the other hand, in the peripheral etching process (S5), when the peripheral portion 101 of the substrate W is displaced downward relative to the central portion of the substrate W (in this case, near the center of the substrate W) (see reference...) Figure 5 (etc.), such as Figure 16 As shown, compared to the case without such displacement (refer to...) Figure 3 Compared to (etc.), the control device 3 changes the position of the treatment fluid nozzle 6 from its original position (etc.). Figure 16 The position (shown by the dashed line) is moved radially inward towards the inside of the RD, while maintaining a constant discharge direction of the etchant from the outlet 6a, and making the liquid-attached position 105 away from the peripheral end face 103 of the substrate W. In this case, the inner peripheral position LFa of the liquid film LF can be configured in a position similar to that without such displacement ( Figure 3 (Refer to the same position). As a result, the liquid width LW of the liquid film LF can be maintained as the liquid width W1.

[0149] In the peripheral etching process (S5), when a predetermined period has elapsed since the start of etching solution discharge, the control device 3 closes the etching solution valve 21. This stops (ends) the discharge of etching solution from the processing solution nozzle 6. The peripheral etching process (S5) ends with the completion of etching solution discharge.

[0150] Further, the control device 3 controls the heating plate lifting unit 32 to lower the heating plate 10 from the heating position (the position shown by the dotted line) to the retreat position (the position shown by the solid line). The control device 3 controls the arm moving unit 41 and the arm moving unit 34 to retreat the processing liquid nozzle 6 and the height strain sensor 12 to the retreat positions, respectively. Figure 13 Figure 12 Further, the control device 3 controls the heating plate lifting unit 32 to lower the heating plate 10 from the heating position (the position shown by the dotted line) to the retreat position (the position shown by the solid line). The control device 3 controls the arm moving unit 41 and the arm moving unit 34 to retreat the processing liquid nozzle 6 and the height strain sensor 12 to the retreat positions, respectively.

[0151] After the completion of the outer periphery etching process (S5), the control device 3 executes an outer periphery rinsing process (S8 of Figure 11 ) for processing the outer periphery 101 of the substrate W with the rinsing liquid. The outer periphery rinsing process (S8) is executed in a state where the rotation of the substrate W is at a prescribed processing speed (a prescribed speed of about 300 rpm to about 1000 rpm). Specifically, when the rotation of the substrate W reaches the processing speed, the control device 3 opens the rinsing liquid valve 23 while closing the etching liquid valve 21, thereby starting the discharge of the rinsing liquid from the discharge port 6a of the processing liquid nozzle 6. The outer periphery rinsing process (S8) is started by the start of the discharge of the rinsing liquid. When a prescribed period elapses from the start of the discharge of the rinsing liquid, the control device 3 closes the rinsing liquid valve 23. Thus, the discharge of the rinsing liquid from the processing liquid nozzle 6 is stopped (completed). The outer periphery rinsing process (S8) is completed by the completion of the discharge of the rinsing liquid.

[0152] Next, a rotation drying (S9 of Figure 11 ) is performed to dry the substrate W. Specifically, the control device 3 controls the rotation motor 18 to accelerate the substrate W to a drying speed (for example, several thousands of rpm) greater than the rotation speed in each of the processes of S2 to S8, and rotates the substrate W at the drying speed. Further, the control device 3 controls the shutter plate rotating unit 26 to rotate the shutter plate 24 at the same speed in the same direction as the substrate W.

[0153] Further, by this, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhered to the outer periphery 101 of the substrate W is flung to the periphery of the substrate W. In this way, the liquid is removed from the outer periphery 101 of the substrate W, and the outer periphery 101 of the substrate W is dried.

[0154] When a prescribed period elapses from the start of the high-speed rotation of the substrate W, the control device 3 stops the rotation of the substrate W by the rotation chuck 5 by controlling the rotation motor 18. After the rotation of the substrate W is stopped, the control device 3 raises the shutter member 9 to the retreat position, and closes the gas valve 29. Further, the control device 3 controls the shutter plate rotating unit 26 to stop the rotation of the shutter plate 24.

[0155] Then, the substrate W is carried out from the processing chamber 4 (S10 of Figure 11 ).​​​​​​Specifically, the control device 3 causes the hand H of the transfer robot CR to enter the inside of the processing chamber 4. Then, the control device 3 releases the suction of the substrate W by the rotary chuck 5, and holds the substrate W on the rotary chuck 5 by the hand H of the transfer robot CR. After that, the control device 3 causes the hand H of the transfer robot CR to retreat from the inside of the processing chamber 4. Thus, the processed substrate W is carried out from the processing chamber 4.

[0156] As described above, according to the present embodiment, the liquid application position 105 is moved in the radial direction RD based on the measured height position of the upper surface peripheral portion 102, so that the inner peripheral position LFa of the liquid film LF formed by the etching liquid supplied to the liquid application position 105 is adjusted to approach the intended position. Therefore, the inner peripheral position LFa of the liquid film LF can be adjusted to a position corresponding to the warping condition of the substrate W. By this adjustment, the liquid width LW can be precisely controlled.

[0157] In addition, since the discharge direction of the etching liquid discharged from the discharge port 6a is kept constant while the inner peripheral position LFa of the liquid film LF is adjusted, the incident angle can be continuously kept to an angle near the optimum angle at which the particle performance is high. Therefore, the particle adhesion at the upper surface peripheral portion 102 after the peripheral portion etching process (S5) can be suppressed or prevented.

[0158] Thus, the etching width of the upper surface peripheral portion 102 can be precisely controlled, and the particle adhesion at the upper surface peripheral portion 102 after the peripheral portion etching process (S5) can be suppressed or prevented.

[0159] In addition, by the movement of the liquid application position 105 in the radial direction RD, the inner peripheral position LFa of the liquid film LF can be adjusted relatively easily. Thus, the precise control of the liquid width LW can be relatively easily achieved.

[0160] In addition, sometimes the warping condition of the substrate W, the direction of warping has a deviation in the circumferential direction of the substrate W. Not limited to the case of the 3rd mode (refer to Figures 6A-6C ), even if the warping mode of the substrate W is a bowl shape (the 1st mode (refer to Figure 4 ), the 2nd mode (refer to Figure 4 )), sometimes such a deviation exists.

[0161] The average value of the height strain HD at each portion in the circumferential direction of the upper surface peripheral portion 102 is obtained as the height strain HD of the upper surface peripheral portion 102. Therefore, even in the case where the warping condition of the substrate W, the direction of warping has a deviation in the circumferential direction of the substrate W, the optimum value can be obtained as the height strain HD of the upper surface peripheral portion 102.

[0162] In addition, in the outer peripheral portion etching process (S5), the height strain HD that increases in conjunction with the progress of heating of the substrate W is acquired, and the inner peripheral position LFa of the liquid film LF is adjusted on the basis of the acquired height strain HD. The amount of warping of the substrate W increases in conjunction with the progress of heating of the substrate W, and the height strain HD changes (for example, increases). By adjusting the inner peripheral position LFa of the liquid film LF on the basis of the change in the height strain HD in conjunction with the progress of heating of the substrate W, it is possible to maintain the inner peripheral position LFa of the liquid film LF at a desired position regardless of the increase in the warping of the substrate W caused by the progress of heating of the substrate W. Thus, it is possible to achieve precise control of the liquid width LW favorably.

[0163] In addition, in the outer peripheral portion etching process (S5), the height strain HD of the upper surface outer peripheral portion 102 is monitored. Then, on the basis of the monitoring result of the height strain HD, the inner peripheral position LFa of the liquid film LF is adjusted. That is, it is possible to adjust the inner peripheral position LFa of the liquid film LF in real time in accordance with the change in the height strain HD of the upper surface outer peripheral portion 102. Since the inner peripheral position LFa of the liquid film LF is adjusted on the basis of actual measurement, it is possible to adjust the inner peripheral position LFa of the liquid film LF with high precision.

[0164] Figure 17 is a block diagram for describing an electrical structure of main portions of the substrate processing apparatus 201 of the second embodiment of the present application. Figure 18 is a diagram showing the content of the heating time-height strain correspondence table 203 stored in the heating time-height strain correspondence table storage unit 202. Figure 17 is a diagram showing the content of the heating time-height strain correspondence table 203 stored in the heating time-height strain correspondence table storage unit 202.

[0165] In the second embodiment, the same reference numerals are assigned to portions common to the first embodiment (the embodiment shown in FIG. 1) and the description thereof is omitted. Figures 1-16 Figures 1-16 In the second embodiment, the same reference numerals are assigned to portions common to the first embodiment (the embodiment shown in FIG. 1) and the description thereof is omitted.

[0166] The substrate processing apparatus 201 differs from the substrate processing apparatus 1 of the first embodiment mainly in that the heating time-height strain correspondence table storage unit 202 is provided in the storage unit 52. The heating time-height strain correspondence table 203 shown in FIG. 3 is stored in the heating time-height strain correspondence table storage unit 202. The heating time-height strain correspondence table 203 defines the correspondence relationship between the elapsed time from the start of heating of the substrate W and the height strain HD of the upper surface outer peripheral portion 102 in the outer peripheral portion etching process (S4). Figure 18 As shown in FIG. 3, the heating time-height strain correspondence table 203 is a table in which the elapsed time from the start of heating of the substrate W is plotted on the abscissa axis and the height strain HD of the upper surface outer peripheral portion 102 is plotted on the ordinate axis. In the heating time-height strain correspondence table 203, the correspondence relationship between the elapsed time from the start of heating of the substrate W and the height strain HD of the upper surface outer peripheral portion 102 is defined.

[0167] Figure 18 ​​As shown in FIG. 7, the heating time-height strain correspondence table 203 defines a plurality of elapsed times from the start of heating of the substrate W and the height strain HD of the upper surface outer peripheral portion 102 corresponding to each elapsed time. The elapsed time from the start of heating of the substrate W is specifically the elapsed time from the time when the heating plate 10 is disposed to the heating position. The heating time-height strain correspondence table 203 is obtained by a prior experiment using the substrate processing apparatus 1.

[0168] Figure 19 is a flowchart for describing the substrate processing example by the processing unit of the second embodiment. Figure 20 is a flowchart for describing the substrate processing example by the processing unit of the second embodiment. Figure 19 is a flowchart for describing the contents of the height strain calculation step (S26) and the liquid landing position moving step (inner peripheral position adjustment step S27) shown in FIG. 7.

[0169] Reference is made to Figures 17-19 and the like for the substrate processing example. Reference is made to Figure 20 A, 20B.

[0170] In the substrate processing example, an unprocessed substrate W is carried into the inside of the processing chamber 4 (S21) and is handed over to the rotary chuck 5 in a state where the device formation surface (surface) faces upward. Then, the substrate W is held by the rotary chuck 5 with the central portion of the lower surface (back surface) of the substrate W being adsorbed and supported (S22). Subsequently, the control device 3 controls the rotary motor 18 so as to start rotation of the substrate W (S23). Figure 19 The steps S21 to S23 of FIG. 6 are equivalent to the steps S1 to S3 of FIG. 1, respectively. Figure 19 The steps S21 to S23 of FIG. 6 are equivalent to the steps S1 to S3 of FIG. 1, respectively. Figure 19 Figure 19 In addition, the control device 3 raises the temperature of the upper surface 10a of the heating plate 10 to a predetermined high temperature and maintains the high temperature by generating Joule heat from the built-in heater 31. At this time, the heating plate 10 is disposed at the retreat position. Figure 11 In addition, the control device 3 controls the arm moving unit 34 so as to move the height strain sensor 12 from the retreat position to the measurement position. Then, the control device 3 executes the height strain measurement step (S24).

[0171] The height strain measurement step (S24) of FIG. 6 is equivalent to the height strain measurement step (S4) of FIG. 2. The height strain measurement step (S24) of FIG. 6 is equivalent to the height strain measurement step (S4) of FIG. 2.

[0172] Figure 19 In addition, the control device 3 controls the arm moving unit 34 so as to move the height strain sensor 12 from the retreat position to the measurement position. Then, the control device 3 executes the height strain measurement step (S24). Figure 11 The height strain measurement step (S24) of FIG. 6 is equivalent to the height strain measurement step (S4) of FIG. 2.

[0173] ​After the height strain gauge measurement process (S24) is completed, the control device 3 controls the arm moving unit 34 to retract the height strain sensor 12 to the retracted position. Additionally, after the height strain gauge measurement process (S24) is completed, the control device 3 controls the rotary motor 18 to accelerate the substrate W to the processing speed.

[0174] Then, when the rotational speed of the substrate W reaches a predetermined processing speed (approximately 300 rpm to approximately 1000 rpm), the control device 3 then performs an outer peripheral etching process to etch the outer peripheral portion 101 of the substrate W. Figure 18 (S25).

[0175] Etching process on the outer periphery ( Figure 18 In step S25, the control device 3 opens the etching solution valve 21 while keeping the rinsing solution valve 23 closed, allowing the etching solution to be discharged from the outlet 6a of the processing solution nozzle 6. Additionally, at the start of the peripheral etching process (S25), the control device 3 controls the heating plate lifting unit 32 to move the heating plate 10 from the retracted position (…). Figure 12 The position shown rises to the heating position. Figure 13 The position shown is maintained in the heating position (heater configuration process). Additionally, before the outer peripheral etching process (S25) begins, the control device 3 controls the blocking member lifting unit 27 to lower the blocking member 9 from the retracted position to the blocking position. Figure 13 The shielding plate 24 of the shielding member 9 is positioned as shown in the diagram and remains in that blocked position. Thus, the space above the center of the upper surface of the substrate W is blocked relative to its surroundings by the shielding plate 24 of the shielding member 9. Furthermore, the control device 3 controls the shielding plate rotation unit 26 to rotate the shielding plate 24 in the same direction and at the same speed as the substrate W.

[0176] Peripheral etching process ( Figure 18 S25) is the peripheral etching process of the first embodiment ( Figure 11 The same process as S5 in the first embodiment. Therefore, regarding the peripheral etching process (S25), only the peripheral etching process in the first embodiment (S25) is considered. Figure 11 The different parts of S5 will be explained.

[0177] Before the outer peripheral etching process (S25) begins, the control device 3 controls the arm moving unit 41 to move the processing liquid nozzle 6 from the retracted position to the processing position. Figure 3 and Figure 13 (The location shown). Generated on the substrate W to be moved into processing unit 2. Figures 4-6CWith either of the warping shown, in order to suppress variation in the processing width (etching width) caused by warping of the substrate W, before the outer peripheral portion etching process (S25) is performed, the processing position (initial processing position) of the processing liquid nozzle 6 is moved in the radial direction RD based on the height strain HD of the upper surface outer peripheral portion 102 calculated through the height strain measurement process (S24). Thereby, the inner peripheral position LFa of the liquid film LF after the outer peripheral portion etching process (S25) is started can be adjusted to be close to the desired position.

[0178] In addition, in order to cope with an increase in warping (i.e., height strain HD) of the substrate W due to heating of the substrate W by the hot plate 10 in the outer peripheral portion etching process (S25), the height position of the upper surface outer peripheral portion 102 (i.e., the height strain HD) is always monitored after the outer peripheral portion etching process (S25) is started, and the inner peripheral position LFa of the liquid film LF is adjusted to be close to a predetermined determined position according to the monitored height strain HD throughout the entire period of the outer peripheral portion etching process (S25). That is, the inner peripheral position LFa of the liquid film LF is adjusted in real time according to variation in the height strain HD of the upper surface outer peripheral portion 102 (height strain calculation process (S26) and liquid landing position moving process (S27)).

[0179] Specifically, as shown in Figure 20 In the height strain calculation process (S26), the control device 3 always calculates the current height strain HD through calculation. Specifically, the control device 3 calculates the amount of variation in the height strain HD from the start of heating based on the elapsed time from the start of heating and the heating time-height strain correspondence table 203 through calculation. Then, the control device 3 calculates the current average height strain (average height strain HD) by adding the amount of variation in the height strain HD to the initial average height strain calculated through the height strain measurement process (S24) through calculation. Figure 20

[0180] Then, in a case where the magnitude of the calculated average height strain is equal to or greater than a threshold value (YES in S32 of Figure 20 , the control device 3 moves the processing liquid nozzle 6 in the radial direction RD (S26 and S33 of Figure 19 ) while keeping the discharge direction of the etching liquid discharged from the discharge port 6a constant. Figure 20 Figure 19 The respective processes of the height strain calculation process (S26) and the liquid landing position moving process (S27) are performed throughout the entire period of the outer peripheral portion etching process (S25). Except for the difference described above, the respective processes of the height strain calculation process (S26) and the liquid landing position moving process (S27) are processes equivalent to the height strain monitoring process (S6) and the liquid landing position moving process (S7).

[0181] ​​After the peripheral etching process (S25) is completed, the control device 3 then performs a peripheral rinsing process to treat the peripheral portion 101 of the substrate W with a rinsing solution. Figure 19 (S28). Figure 19 The height strain gauge measurement process (S28) is related to Figure 11 The same process as the peripheral rinsing process (S8).

[0182] After the peripheral rinsing process (S28), a rotary drying process is performed to dry the substrate W. Figure 19 (S9). Figure 19 Rotary drying (S29) is with Figure 11 The same process as rotary drying (S9).

[0183] When the high-speed rotation of substrate W has elapsed for a predetermined period, control device 3 stops the rotation of substrate W using rotary chuck 5 by controlling rotary motor 18. After the rotation of substrate W stops, control device 3 raises blocking member 9 to the retracted position and closes air valve 29. In addition, control device 3 controls blocking plate rotation unit 26 to stop the rotation of blocking plate 24.

[0184] Then, the substrate W is removed from the processing chamber 4. Figure 11 Process S30). Figure 19 The process of S30 is related to Figure 11 The same process as rotary drying (S9).

[0185] In the second embodiment, based on the first embodiment, the following effects are achieved.

[0186] That is, the height strain HD is calculated based on the elapsed time since the start of heating. In other words, it is not necessary to monitor the height strain HD in advance during the peripheral etching process (S25). That is, the inner peripheral position LFa of the liquid film LF can be adjusted with high precision without measuring the height strain HD during the peripheral etching process (S25).

[0187] Furthermore, the control device 3 (processing unit 51) calculates the height strain HD by referring to the heating time-height strain correspondence table 203 stored in the heating time-height strain correspondence table storage unit 202. As a result, the height strain HD can be obtained accurately.

[0188] Furthermore, the heating time-high strain correspondence table storage unit 202 is obtained experimentally using the substrate processing device 201. Therefore, the high strain (HD) can be obtained with higher accuracy.

[0189] In the first and second embodiments, the position of the processing liquid nozzle 6 can also be moved in the vertical direction V instead of in the radial direction RD, whereby the liquid position 105 is moved in the radial direction RD while the discharge direction of the etching liquid discharged from the discharge port 6a is kept constant.

[0190] Specifically, in the outer peripheral portion etching process (S5, S25), in the case where the outer peripheral portion 101 of the substrate W is displaced upward with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W) (refer to Figure 4 and Figure 6B etc.), the control device 3 moves the position of the processing liquid nozzle 6 upward from the original position (the position shown by a broken line in Figure 21 , as shown in Figure 3 , compared to the case where there is no such displacement (refer to Figure 21 ), while keeping the discharge direction of the etching liquid discharged from the discharge port 6a constant, the liquid position 105 is brought close to the peripheral end surface 103 of the substrate W. In this case, the inner peripheral position LFa of the liquid film LF can be disposed at the same position as in the case where there is no such displacement (refer to Figure 3 . As a result, the liquid width LW of the liquid film LF is kept at the liquid width W1.

[0191] In addition, in the outer peripheral portion etching process (S5, S25), in the case where the outer peripheral portion 101 of the substrate W is displaced downward with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W) (refer to Figure 5 etc.), the control device 3 moves the position of the processing liquid nozzle 6 downward from the original position (the position shown by a broken line in Figure 22 , as shown in Figure 3 , compared to the case where there is no such displacement (refer to Figure 22 etc.), while keeping the discharge direction of the etching liquid discharged from the discharge port 6a constant, the liquid position 105 is brought away from the peripheral end surface 103 of the substrate W. In this case, the inner peripheral position LFa of the liquid film LF can be disposed at the same position as in the case where there is no such displacement (refer to Figure 3 . As a result, the liquid width LW of the liquid film LF is kept at the liquid width W1.

[0192] In the second embodiment, the case where the correspondence relationship between the elapsed time from the start of heating of the substrate W and the height strain HD of the upper surface outer peripheral portion 102 corresponding to each elapsed time is shown in the heating time-height strain correspondence table 203 is described as an example, and the correspondence relationship between the elapsed time and the height strain HD of the upper surface outer peripheral portion 102 can also be defined by an equation or the like, which is stored in the storage unit 52.

[0193] Figure 23 andFigure 24 This is a cross-sectional view showing an example of the discharge state of the etching solution during the peripheral etching process performed in the substrate processing apparatus 301 of the third embodiment. The peripheral etching process performed in the substrate processing apparatus 301 is respectively related to... Figure 11 The peripheral etching process (S5) shown and Figure 19 The etching process (S25) shown is the same as the etching process on the outer periphery.

[0194] In the third embodiment, compared with the first embodiment ( Figures 1-16 The common parts of the embodiments shown are labeled with the same as those in the embodiments shown. Figures 1-16 The same reference numerals are used in the attached figures, and the descriptions are omitted.

[0195] The main difference between the substrate processing apparatus 301 and the substrate processing apparatus 1 of the first embodiment is that the etchant flow regulating valve 302, which adjusts the flow rate of the etchant supplied to the processing liquid nozzle 6, is installed in the etchant piping 20. The etchant flow regulating valve 302 includes a valve body with a valve seat inside, a valve core for opening and closing the valve seat, and an actuator for moving the valve core between an open position and a closed position. The control device 3 adjusts the opening degree of the etchant flow regulating valve 302 by moving the valve core using the actuator.

[0196] As the discharge flow rate of the etching solution (processing solution) towards liquid position 105 increases, the liquid width LW tends to widen. On the other hand, as the discharge flow rate of the etching solution (processing solution) towards liquid position 105 decreases, the liquid width LW tends to narrow.

[0197] In the third embodiment, when the outer peripheral portion 101 of the substrate W is displaced in the vertical direction V relative to the central portion of the substrate W (in this case, near the center of the substrate W), based on the obtained height strain HD, in the outer peripheral etching process (S5, S25), while keeping the discharge direction of the etching liquid discharged from the discharge port 6a constant, the discharge flow rate of the etching liquid discharged from the discharge port 6a is changed, thereby adjusting the inner peripheral position LFa of the liquid film LF (inner peripheral position adjustment process).

[0198] That is, in the peripheral etching process (S5, S25), when the peripheral portion 101 of the substrate W is displaced upward relative to the central portion of the substrate W (in this case, near the center of the substrate W) (refer to...) Figure 4 and Figure 6B (etc.), control device 3 such as Figure 26 As shown, compared to the case without this displacement ( Figure 25In comparison, by reducing the opening degree of the etching liquid flow rate adjustment valve 302 while keeping the discharge direction of the etching liquid discharged from the discharge port 6a constant, the discharge flow rate of the etching liquid discharged from the discharge port 6a is reduced. In this case, the inner peripheral position LFa of the liquid film LF can be disposed at the same position as in the case where there is no such displacement (refer to FIG. 6A). This is because the range of the processing liquid that spreads toward the inner side of the radial direction RD from the landing position 105 is reduced. As a result, the liquid width LW of the liquid film LF is kept as the liquid width Wl. Figure 25 In comparison, by reducing the opening degree of the etching liquid flow rate adjustment valve 302 while keeping the discharge direction of the etching liquid discharged from the discharge port 6a constant, the discharge flow rate of the etching liquid discharged from the discharge port 6a is reduced. In this case, the inner peripheral position LFa of the liquid film LF can be disposed at the same position as in the case where there is no such displacement (refer to FIG. 6A). This is because the range of the processing liquid that spreads toward the inner side of the radial direction RD from the landing position 105 is reduced. As a result, the liquid width LW of the liquid film LF is kept as the liquid width Wl.

[0199] In addition, in the outer peripheral etching process (S5, S25), in the case where the outer peripheral portion 101 of the substrate W is displaced downward with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W) (refer to FIG. 6A, etc.), the control device 3, as shown in FIG. 6B, in comparison with the case where there is no such displacement (refer to FIG. 6A, etc.), by increasing the opening degree of the etching liquid flow rate adjustment valve 302 while keeping the discharge direction of the etching liquid discharged from the discharge port 6a constant, the discharge flow rate of the etching liquid discharged from the discharge port 6a is increased. In this case, the inner peripheral position LFa of the liquid film LF can be disposed at the same position as in the case where there is no such displacement (refer to FIG. 6A). This is because the range of the processing liquid that spreads toward the inner side of the radial direction RD from the landing position 105 is increased. As a result, the liquid width LW of the liquid film LF is kept as the liquid width Wl. Figure 5 Figure 27 Figure 25 In comparison, by reducing the opening degree of the etching liquid flow rate adjustment valve 302 while keeping the discharge direction of the etching liquid discharged from the discharge port 6a constant, the discharge flow rate of the etching liquid discharged from the discharge port 6a is reduced. In this case, the inner peripheral position LFa of the liquid film LF can be disposed at the same position as in the case where there is no such displacement (refer to FIG. 6A). This is because the range of the processing liquid that spreads toward the inner side of the radial direction RD from the landing position 105 is reduced. As a result, the liquid width LW of the liquid film LF is kept as the liquid width Wl. Figure 25

[0200] According to the third embodiment, the discharge flow rate of the etching liquid is changed based on the acquired height strain HD, whereby the inner peripheral position LFa of the liquid film LF can be adjusted relatively easily. Thus, the precise control of the inner peripheral position LFa of the liquid film LF can be achieved relatively easily.

[0201] Figure 4 is a cross-sectional view showing one example of the discharge state of the etching liquid in the outer peripheral etching process performed in the substrate processing device 401 of the fourth embodiment. The outer peripheral etching process performed in the substrate processing device 401 is a process equivalent to the outer peripheral etching process (S5) shown in FIG. 5A and the outer peripheral etching process (S25) shown in FIG. 5B. Figure 6B Figure 28

[0202] In the fourth embodiment, the portions common to the first embodiment (refer to FIG. 1A) are denoted by the same reference numerals as in the case of the first embodiment and the description thereof is omitted. Figure 25 Figure 25

[0203] ​​​​​​​The substrate processing apparatus 401 differs from the substrate processing apparatus 1 of the first embodiment mainly in that the gas blowing unit 402 that blows gas, one example of which is a non-reactive gas, as a gas from the inside of the processing liquid in the radial direction RD toward the upper surface outer peripheral portion 102 of the processing liquid (etching liquid) is provided in the substrate processing apparatus 401.

[0204] The gas blowing unit 402 includes a gas nozzle 403, a gas pipe 404 connected to the gas nozzle 403, a gas valve 405 and a gas flow rate adjustment valve 406 interposed in the gas pipe 404, and a nozzle moving unit 407 that moves the gas nozzle 403. Although not shown, the gas flow rate adjustment valve 406 includes a valve body in which a valve seat is provided inside, a valve core that opens and closes the valve seat, and an actuator that moves the valve core between an open position and a closed position. The non-reactive gas from a non-reactive gas supply source is supplied to the gas pipe 404. The non-reactive gas as a gas is, for example, nitrogen, but is not limited to nitrogen, and can be air, helium, argon, or other non-reactive gas.

[0205] When the gas valve 405 is opened, the non-reactive gas supplied from the gas pipe 404 to the gas nozzle 403 is discharged from a gas discharge port 403a formed in the lower end of the gas nozzle 403. The nozzle moving unit 407 moves the gas nozzle 403 between a processing position at which the gas blown from the gas nozzle 403 is blown to the upper surface outer peripheral portion 102 of the substrate W and a retreat position at which the gas nozzle 403 is retreated to the side of the rotary chuck 5 in a plan view.

[0206] When the gas valve 405 is opened in a state in which the gas nozzle 403 is disposed at the processing position, the gas discharge port 403a discharges the gas (non-reactive gas) from the position inside the processing liquid in the radial direction RD to the outside in the radial direction RD toward the processing liquid (i.e., the inner peripheral position LFa of the liquid film LF) on the upper surface outer peripheral portion 102.

[0207] In the fourth embodiment, in a state in which the processing liquid (etching liquid) is discharged to the upper surface outer peripheral portion 102 of the substrate W, when the gas valve 405 is opened, the gas nozzle 403 discharges the gas toward the blow region 408 located on the inside of the radial direction RD of the landing position 105 from the inside of the radial direction RD obliquely downward. The gas discharged from the gas discharge port 403a of the gas nozzle 403 flows along the upper surface of the substrate W to the outside in the radial direction RD after being blown to the blow region 408, and hits (blows) the liquid film LF at the inner peripheral position LFa of the liquid film LF.

[0208] As the flow rate (discharge flow rate) of the gas discharged from the gas discharge port 403a increases, the flow rate (blow flow rate) of the gas that blows the inner peripheral position LFa of the liquid film LF increases. As the blow flow rate increases, the inner peripheral position LFa of the liquid film LF approaches the peripheral end surface 103, and there is a tendency for the liquid width LW to narrow.

[0209] On the other hand, as the flow rate of the gas (discharge flow rate) discharged from the gas discharge port 403a decreases, the flow rate of the gas at the inner peripheral position LFa of the blown liquid film LF (blown flow rate) decreases. As the blown flow rate decreases, the inner peripheral position LFa of the liquid film LF moves away from the peripheral end surface 103, and there is a tendency for the liquid width LW to widen.

[0210] Therefore, in the fourth embodiment, in the outer peripheral portion etching process (S5, S25), in a case where the outer peripheral portion 101 of the substrate W is displaced in the upward direction V with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W), based on the acquired height strain HD, the discharge direction of the etching liquid discharged from the discharge port 6a is kept constant while the flow rate of the gas blown at the inner peripheral position LFa of the blown liquid film LF is changed, whereby the inner peripheral position LFa of the liquid film LF is adjusted (inner peripheral position adjustment process).

[0211] In addition, since the gas is blown at the inner peripheral position LFa of the liquid film LF from the inside of the radial direction RD, the processing liquid (etching liquid) at the liquid landing position 105 can be suppressed from flying to the inside of the radial direction RD. Thus, the processing liquid can be more effectively suppressed from entering the device formation region.

[0212] In the fourth embodiment, in the outer peripheral portion etching process (S5, S25), in a case where the outer peripheral portion 101 of the substrate W is displaced upward with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W) (refer to Figure 5 and the like), the control device 3, as shown in Figure 29 , increases the opening degree of the gas flow rate adjustment valve 406 compared to a case where there is no such displacement (refer to Figure 25 ), whereby the flow rate of the gas blown at the inner peripheral position LFa of the liquid film LF from the inside of the radial direction RD is increased while the discharge direction of the etching liquid discharged from the discharge port 6a is kept constant. In this case, the inner peripheral position LFa of the liquid film LF can be disposed at the same position as in a case where there is no such displacement (refer to Figure 25 ). As a result, the liquid width LW of the liquid film LF is kept as the liquid width Wl. Figure 26

[0213] In addition, in the outer peripheral portion etching process (S5, S25), in a case where the outer peripheral portion 101 of the substrate W is displaced downward with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W) (refer to Figure 28 and the like), the control device 3, as shown in Figure 30 , increases the opening degree of the gas flow rate adjustment valve 406 compared to a case where there is no such displacement (refer to Figure 4 ​) compared, the opening degree of the gas flow adjustment valve 406 is adjusted by reducing the flow rate of the gas blown toward the inner peripheral position LFa of the liquid film LF from the inner side of the radial direction RD, thereby reducing the flow rate of the gas blown toward the inner peripheral position LFa of the liquid film LF from the inner side of the radial direction RD while keeping the discharge direction of the etching liquid discharged from the discharge port 6a constant. In this case, the inner peripheral position LFa of the liquid film LF can be arranged at the same position as in the case where there is no such displacement (refer to Figure 11 ) compared. As a result, the liquid width LW of the liquid film LF is kept as the liquid width W1.

[0214] According to the fourth embodiment, the blow-off flow rate of the gas blown toward the inner peripheral position LFa of the liquid film LF from the inner side of the radial direction RD is changed based on the acquired height strain HD, whereby the inner peripheral position LFa of the liquid film LF can be adjusted relatively easily. Thus, the precise control of the inner peripheral position LFa of the liquid film LF can be achieved relatively easily.

[0215] In the fourth embodiment, it can also be that the blow-off flow rate of the gas blown toward the inner peripheral position LFa of the liquid film LF from the inner side of the radial direction RD is adjusted by moving the position of the gas nozzle 403 in the radial direction RD.

[0216] As the gas discharge port 403a approaches the peripheral end surface 103, the pressure of the gas blown toward the inner peripheral position LFa of the liquid film LF increases. As the pressure of the gas increases, the inner peripheral position LFa of the liquid film LF approaches the peripheral end surface 103, and there is a tendency for the liquid width LW to narrow.

[0217] On the other hand, as the gas discharge port 403a moves away from the peripheral end surface 103, the pressure of the gas blown toward the inner peripheral position LFa of the liquid film LF decreases. As the pressure of the gas decreases, the inner peripheral position LFa of the liquid film LF moves away from the peripheral end surface 103, and there is a tendency for the liquid width LW to widen.

[0218] That is, by changing the position of the gas discharge port 403a in the radial direction RD, the position of the inner peripheral position LFa of the liquid film LF can be adjusted without changing the flow rate of the gas discharged from the gas discharge port 403a.

[0219] In this modification, in the outer peripheral portion etching process (S5, S25), in the case where the outer peripheral portion 101 of the substrate W is displaced upward with respect to the central portion of the substrate W (in this case, the vicinity of the center of the substrate W) (refer to Figure 19 and ​ , etc.), the control device 3 controls the gas flow adjustment valve 406 so as to keep the discharge direction of the etching liquid discharged from the discharge port 6a constant, as shown in ​ , compared to the case where there is no such displacement (refer to ​Compared to (see reference), by moving the position of the gas nozzle 403 outward in the radial direction RD, the blowing area 408 is moved outward in the radial direction RD. This allows for maintaining a constant discharge direction of the etching solution from the outlet 6a while increasing the flow rate of the gas blown from the inside of the radial direction RD to the inner circumferential position LFa of the liquid film LF. In this case, the inner circumferential position LFa of the liquid film LF can be positioned as if there were no such displacement (see reference). ​ At the same location. As a result, the liquid width LW of the liquid film LF remains the same as the liquid width W1.

[0220] Furthermore, in the peripheral etching process (S5, S25), when the peripheral portion 101 of the substrate W is displaced downward relative to the central portion of the substrate W (in this case, near the center of the substrate W) (see reference...) ​ (etc.), control device 3 such as ​ As shown, compared to the case without such displacement (refer to...) ​ Compared to other methods, by moving the position of the gas piping 404 outward in the radial direction RD, the blowing region 408 is moved outward in the radial direction RD. This maintains a constant discharge direction of the etching solution from the outlet 6a while reducing the flow rate of the blowing gas discharged from the inner side of the radial direction RD to the inner circumferential position LFa of the liquid film LF. In this case, the inner circumferential position LFa of the liquid film LF can be positioned as if there were no such displacement (see [reference]). ​ At the same location. As a result, the liquid width LW of the liquid film LF remains the same as the liquid width W1.

[0221] Alternatively, combinations are also possible. ​ , 27 The fourth embodiment shown and ​ , 29 The modified example shown. That is, the gas flow rate towards the inner periphery of the liquid film LF can also be adjusted by changing the gas discharge flow rate from the gas outlet 403a and the blowing area 408.

[0222] The above describes four aspects of the present invention, but the present invention can also be implemented in other ways.

[0223] For example, in ​ In the modified example shown, the high strain HD of the outer periphery 102 of the upper surface (i.e., the warping state of the substrate W) is considered. ​ The height strain sensor 502, which measures the strain of the substrate W held in the rotating chuck 5, also serves as an eccentric sensor for measuring the eccentricity of the substrate W.

[0224] If the substrate W is eccentric with respect to the rotary chuck 5, that is, the center of the substrate W is not located on the rotation axis A, the distance in the radial direction RD from the liquid application position 105 to the peripheral end surface 103 of the substrate W varies depending on the rotation angle of the substrate W. In this case, in the outer peripheral portion etching process S5, S25, the etching width of the outer peripheral portion 102 of the upper surface of the substrate W is deviated, and it is not possible to maintain the uniformity of the processing width.

[0225] In the fifth embodiment, in order to improve the uniformity of the etching width at the outer peripheral portion 102 of the upper surface of the substrate W, after the substrate W is held by the rotary chuck 5, the eccentricity of the substrate W is measured by the height strain sensor 502, and in the case where the substrate W is eccentric, the center alignment is performed by moving the substrate in the horizontal direction using a centering mechanism. That is, the center of the substrate W is brought close to the rotation axis A, and is located on or near the rotation axis A.

[0226] The height strain sensor 502 includes a height strain detection portion 506 that detects the height strain HD of the outer peripheral portion 102 of the upper surface, and a radial position detection portion 507 that detects the position of the radial direction RD of the peripheral end surface 103 of the substrate W held by the rotary chuck 5. The radial position detection portion 507 detects the position of the radial direction RD of the peripheral end surface 103 of the substrate W. The height strain sensor 502 is installed at the front end portion of the sensor arm 33.

[0227] The measurement of the eccentricity of the substrate W using the height strain sensor 502 is performed in the height strain measurement process (S4, S24) of the first embodiment, the second embodiment, the third embodiment, and the fourth embodiment. ​ ​ The control device 3 measures the height strain HD of the outer peripheral portion 102 of the upper surface using the height strain detection portion 506, and measures the position of the radial direction RD of the peripheral end surface 103 of the substrate W using the radial position detection portion 507 in the height strain measurement process (S4, S24). Thus, by the height strain sensor 502, it is possible to measure not only the height strain HD but also the eccentricity of the substrate W.

[0228] In addition, in each of the embodiments, the structure in which the height strain sensor 12, 502 is installed at the front end portion of the sensor arm 33 and is movable by the arm moving unit 34 is described. In each of the embodiments, the height strain sensor 12, 502 can also be a fixed type sensor that is fixedly arranged.

[0229] ​Further, the height strain sensor 12, 502 can also detect the height position of the outer peripheral portion of the back surface (lower surface) of the substrate W instead of the upper surface outer peripheral portion 102. The height strain sensor 12, 502 can also directly detect the height strain HD by detecting the height from the reference position instead of detecting the height position of the upper surface outer peripheral portion 102.

[0230] Further, the height strain sensor 12, 502 can also be configured using a transmissive type (i.e., light receiving / emitting separation type) photoelectric sensor instead of a reflective type. Further, the height strain sensor 12, 502 can also be configured using a sensor other than a photoelectric sensor (e.g., a CCD camera).

[0231] Further, in each of the embodiments, the measurement of the warping state of the substrate W can also be performed at a prescribed site other than the substrate processing apparatus 1, 201, 301, 401, and the height strain HD measured at the site can be imparted to the substrate processing apparatus.

[0232] Further, in the first and second embodiments, the movement direction of the landing position 105 is described as the radial direction RD, but the movement direction of the landing position 105 can also be inclined with respect to the radial direction RD as long as it is a direction along the upper surface of the substrate W and intersects with the tangential direction at the landing position 105.

[0233] Further, the processing liquid nozzle 6 is not limited to a scanning type that can move while tracing a circular arc trajectory, but can also be a straight type that can move in a straight line shape.

[0234] Further, the third and fourth embodiments can also be combined into the first and second embodiments. That is, the inner peripheral position LDa of the liquid film LD can also be adjusted by combining the adjustment of the discharge flow rate of the etching liquid from the discharge port 6a and the adjustment of the landing position 105. Further, the inner peripheral position LDa of the liquid film LD can also be adjusted by combining the adjustment of the blowout flow rate of the gas toward the inner peripheral position LDa and the adjustment of the landing position 105. Further, the inner peripheral position LDa of the liquid film LD can also be adjusted by combining the adjustment of the discharge flow rate of the etching liquid from the discharge port 6a, the adjustment of the blowout flow rate of the gas toward the inner peripheral position LDa, and the adjustment of the landing position 105.

[0235] Further, the adjustment of the inner peripheral position LDa based on the measured height strain HD can also be performed not only in the outer peripheral portion etching process (S5, S25) but also in the outer peripheral portion washing process (S6, S26).

[0236] In addition, in each of the embodiments described above, the processing liquid nozzle 6 is described as an example of a processing liquid nozzle that discharges both etching liquid and rinsing liquid, but a processing liquid nozzle that discharges etching liquid (etching liquid nozzle) and a processing liquid nozzle that discharges rinsing liquid (rinsing liquid nozzle) can be provided separately.

[0237] In addition, in each of the embodiments described above, the processing liquid discharged from the processing liquid nozzle 6 can also be a processing liquid other than etching liquid. Such a liquid is a liquid of at least one of hydrofluoric acid, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, buffered hydrofluoric acid (BHF), diluted hydrofluoric acid (DHF), ammonia water, hydrogen peroxide water, an organic acid (for example, citric acid, oxalic acid, and the like), an organic base (for example, TMAH: tetramethylammonium hydroxide, and the like), an organic solvent (for example, IPA (isopropyl alcohol), and the like), a surfactant, and an anticorrosive agent.

[0238] The substrate processing apparatus 1, 201, 301, 401 is not limited to an apparatus that processes a circular plate-shaped substrate W, and can also be an apparatus that processes a polygonal substrate W such as a glass substrate for FPD.

[0239] The embodiments of the present application have been described in detail, but these are merely specific examples used to clarify the technical contents of the present application, and the present application should not be construed as being limited to these specific examples, and the spirit and scope of the present application are defined only by the appended claims.

[0240] Explanation of Reference Signs

[0241] 1: Substrate processing apparatus

[0242] 3: Control device (height strain gauge measurement unit, height strain acquisition unit)

[0243] 5: Rotary chuck (substrate holding unit)

[0244] 6: Processing liquid nozzle

[0245] 6a: Discharge port

[0246] 7: Etching liquid supply unit (processing liquid supply unit)

[0247] 10: Hot plate (heater)

[0248] 12: Height strain sensor (height strain gauge measurement unit)

[0249] 18: Rotary motor (substrate rotation unit)

[0250] 32: Hot plate lifting unit (heater moving unit)

[0251] 41: Arm moving unit (discharge port position moving unit)

[0252] 102: upper surface outer peripheral portion (surface outer peripheral portion)

[0253] 105: liquid landing position

[0254] 201: substrate processing apparatus

[0255] 203: heating time-height strain correspondence table (correspondence)

[0256] 301: substrate processing apparatus

[0257] 302: etching liquid flow rate adjustment valve (discharge flow rate changing unit, height strain acquisition unit)

[0258] 401: substrate processing apparatus

[0259] 406: gas flow rate adjustment valve (blowing flow rate changing unit, inner peripheral position adjustment unit)

[0260] 407: nozzle moving unit (blowing flow rate changing unit, inner peripheral position adjustment unit)

[0261] A1: rotation axis

[0262] HD: height difference

[0263] LFa: inner peripheral position of liquid film (inner peripheral position of liquid landing processing liquid)

[0264] W: substrate

Claims

1. A substrate processing method comprising: a substrate rotation process of rotating a substrate held by a substrate holding unit about an axis of rotation passing through a central portion of the substrate; an outer peripheral portion processing process, in parallel with the substrate rotation process, of discharging a processing liquid from a discharge port arranged on an inner side in a radial direction of rotation of the substrate to a liquid landing position provided on an outer peripheral portion of a surface of the substrate, and processing the outer peripheral portion of the surface with the processing liquid; a height strain acquisition process of acquiring a height strain of the outer peripheral portion of the surface of the substrate; an inner peripheral position adjustment process of adjusting an inner peripheral position of the processing liquid supplied to the liquid landing position while keeping constant a discharge direction of the processing liquid discharged from the discharge port, on the basis of the height strain acquired by the height strain acquisition process; and a substrate heating process of heating at least the outer peripheral portion in the substrate in parallel with the substrate rotation process and the outer peripheral portion processing process, the height strain acquisition process includes a heating height strain calculation process of calculating the height strain of the outer peripheral portion on the basis of an elapsed time from the start of the substrate heating process, the inner peripheral position adjustment process includes a process of adjusting the inner peripheral position on the basis of the height strain calculated by the heating height strain calculation process.

2. The substrate processing method according to claim 1, wherein the inner peripheral position adjustment process includes a process of moving the liquid landing position in a movement direction intersecting a tangential direction at the liquid landing position while keeping constant the discharge direction.

3. The substrate processing method according to claim 1 or 2, wherein the inner peripheral position adjustment process includes a process of changing a flow rate of the processing liquid discharged from the discharge port while keeping constant the discharge direction.

4. The substrate processing method according to claim 1 or 2, wherein the inner peripheral position adjustment process includes a process of changing a flow rate of a gas jetted toward the outer peripheral portion of the surface from an inner side in the radial direction of rotation of the substrate while keeping constant the discharge direction.

5. The substrate processing method according to claim 1 or 2, wherein the height strain acquisition process includes a process of acquiring, as the height strain, an average of height strains at a plurality of positions in the outer peripheral portion of the surface separated in a circumferential direction of the substrate.

6. The substrate processing method according to claim 1 or 2, wherein the substrate heating process includes a heater arrangement process of arranging a heater at a heating position at which the substrate can be heated at least with radiant heat from a back surface side of the substrate.

7. The substrate processing method according to claim 1 or 2, wherein the height strain acquisition process includes a height strain monitoring process of monitoring the height strain of the outer peripheral portion in parallel with the substrate heating process, The inner periphery position adjustment process includes a process of adjusting the inner periphery position based on a monitoring result of the height strain in the height strain monitoring process in parallel with the substrate rotation process and the outer periphery portion treatment process.

8. The substrate processing method according to claim 1 or 2, wherein The heating height strain calculation process includes a process of calculating the height strain with reference to a correspondence relationship between an elapsed time from the start of the substrate heating process and the height strain of the surface outer periphery portion.

9. The substrate processing method according to claim 8, wherein The correspondence relationship is calculated by an experiment using a substrate processing apparatus that executes the substrate processing method.

10. The substrate processing method according to claim 1 or 2, wherein The substrate holding unit includes a unit that holds the substrate in contact with a central portion of the substrate without being in contact with an outer periphery portion of the substrate.

11. A substrate processing apparatus comprising: a substrate holding unit that holds a substrate; a substrate rotation unit that rotates the substrate held by the substrate holding unit about a rotation axis that passes through a central portion of the substrate; a processing liquid nozzle that has a discharge port disposed on an inner side in a radius direction of rotation of the substrate with respect to a surface outer periphery portion of the substrate held by the substrate holding unit; a processing liquid supply unit that supplies processing liquid to the processing liquid nozzle; a height strain acquisition unit that acquires a height strain of the surface outer periphery portion of the substrate; an inner periphery position adjustment unit that adjusts an inner periphery position of processing liquid supplied to a liquid landing position provided to the surface outer periphery portion of the substrate; a heating unit that heats at least an outer periphery portion in the substrate; and a control device that controls the substrate rotation unit, the processing liquid supply unit, the height strain acquisition unit, the inner periphery position adjustment unit, and the heating unit, the control device executes: a substrate rotation process of rotating the substrate held by the substrate holding unit about the rotation axis by the substrate rotation unit; an outer periphery portion treatment process of discharging processing liquid from the discharge port to the liquid landing position in parallel with the substrate rotation process, and treating the surface outer periphery portion with processing liquid; a height strain acquisition process of acquiring the height strain of the surface outer periphery portion of the substrate by the height strain acquisition unit; an inner periphery position adjustment process of adjusting the inner periphery position of processing liquid supplied to the liquid landing position by the inner periphery position adjustment unit while keeping a discharge direction of processing liquid discharged from the discharge port constant based on the height strain acquired by the height strain acquisition process; and a substrate heating process of heating at least the outer periphery portion in the substrate in parallel with the substrate rotation process and the outer periphery portion treatment process, the control device executes, in the height strain acquisition process, a heating height strain calculation process of calculating the height strain of the surface outer periphery portion based on an elapsed time from the start of the substrate heating process, ​ ​ The control device performs a process of adjusting the inner periphery position based on the height strain obtained by the heating height strain calculation process in the inner periphery position adjustment process.

Images