Organic device, display device, photoelectric conversion device, electronic device, lighting device, mobile device lighting appliance, and mobile device

By setting through-holes in the interlayer insulation layer and using conductive components to connect wires and electrodes, the problems of increased size and leakage current in organic devices are solved, resulting in reduced costs and improved reliability.

CN113921567BActive Publication Date: 2026-01-02CANON KK
View PDF 3 Cites 0 Cited by

Patent Information

Application Number
CN202110760980.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-07-10
Filing Date
2021-07-06
Publication Date
2026-01-02
Estimated Expiration
2041-07-06

AI Technical Summary

Technical Problem

In the prior art, the increased size of organic devices leads to increased costs, and the leakage current between the upper and lower electrodes is difficult to control.

Method used

By creating vias in the interlayer insulation layer and connecting wires and electrodes using conductive components, the organic layer is ensured to be discontinuous in the via region, thereby reducing the area of ​​the organic device and suppressing the generation of leakage current.

Benefits of technology

It effectively reduces the manufacturing cost of organic devices and improves device reliability and leakage current suppression.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN113921567B_ABST
    Figure CN113921567B_ABST
Patent Text Reader

Abstract

An organic device, display device, photoelectric conversion device, electronic device, lighting device, mobile device lighting appliance, and mobile device. An organic device is provided that includes a first lead wire and a second lead wire, an insulator disposed above the first lead wire and the second lead wire, a first electrode disposed above the insulator, an organic layer disposed above the first electrode, a second electrode disposed above the organic layer, a first via including a first conductor connecting the first lead wire and the first electrode, and a second via including a second conductor connecting the second lead wire and the second electrode. An upper portion of the first via is filled with the first conductor. An upper portion of the second via includes a region that is not filled with the second conductor and is covered by the second conductor. A region of the second conductor along an inner wall of the second via includes no organic layer in contact with the second electrode.
Need to check novelty before this filing date? Find Prior Art

Description

TECHNICAL FIELD

[0001] The present application relates to an organic device, a display device, a photoelectric conversion device, an electronic device, an illumination device, a mobile device lighting appliance, and a mobile device. BACKGROUND

[0002] An organic device including a photoelectric conversion element or a light-emitting element including an organic layer for light emission or photoelectric conversion has been attracting attention. In an organic device, an organic layer or an upper electrode can be integrally formed on the entire surface of a light-emitting region or a photoelectric conversion region. If a power supply unit for the upper electrode is arranged outside the light-emitting region or outside the photoelectric conversion region where the organic layer is arranged, the region without the organic layer will increase, thereby increasing the size of the organic device. If the size of the organic device increases, the number of organic devices that can be obtained from a single substrate will decrease, thereby increasing the cost of each organic device. Japanese Patent Application Publication No. 2018-129265 discloses that an auxiliary electrode layer connected to a common electrode layer (upper electrode) can be arranged in a portion where the organic layer is to be arranged.

[0003] In Japanese Patent Application Publication No. 2018-129265, a pixel electrode layer (lower electrode) and a wire are connected at the bottom of a connection recess portion formed by making a portion of the pixel electrode layer recessed in a contact hole arranged in an interlayer insulating layer. A bank on the connection recess portion can have a concave shape on the upper surface thereof corresponding to the shape of the connection recess portion. If the concave shape is formed on the upper surface of the bank, the portion of the organic layer arranged in the concave shape of the bank can be thinned due to the concave shape of the bank. If the organic layer is thinned, the leakage current between the upper electrode and the lower electrode can increase. SUMMARY

[0004] Some embodiments of the present application provide a technique that is advantageous in suppressing the manufacturing cost of an organic device and suppressing the leakage current.

[0005] According to some embodiments, there is provided an organic device including a substrate, a first conductor and a second conductor disposed over a main surface of the substrate, an interlayer insulating layer disposed over the first conductor and the second conductor, a first electrode disposed over the interlayer insulating layer, an organic layer disposed over the first electrode, and a second electrode disposed over the organic layer, wherein the interlayer insulating layer is provided with a first via and a second via in a region thereof in which the organic layer is disposed in an orthogonal projection with respect to the main surface, wherein the first via is provided with a first conductive member configured to electrically connect the first conductor and the first electrode, and the second via is provided with a second conductive member configured to electrically connect the second conductor and the second electrode, at least an upper portion of the first via is filled with the first conductive member, at least an upper portion of the second via includes a region not filled with the second conductive member, a side surface of the second via is covered with the second conductive member in the region of the second via not filled with the second conductive member, an inner wall of the second conductive member along the side surface of the second via includes a region not having the organic layer, and the second electrode is in contact with the region not having the organic layer of the inner wall of the second conductive member along the side surface of the second via.

[0006] Other features of the present application will become apparent from the following description of example embodiments, given by way of example only, with reference to the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1 is a cross-sectional view illustrating a configuration example of an organic device according to an embodiment;

[0008] Figure 2 is a plan view illustrating a configuration example of the organic device of Figure 1 ;

[0009] Figure 3 is a cross-sectional enlarged view illustrating a configuration example of the organic device of Figure 1 ;

[0010] Figures 4A to 4E is a view illustrating a method of manufacturing the organic device of Figure 1 ;

[0011] Figure 5A and Figure 5B is a view illustrating a method of manufacturing the organic device of Figure 1 ;

[0012] Figure 6 is a view illustrating a modification example of the cross section shown in Figure 3 ;

[0013] Figure 7is a cross-sectional view showing a configuration example of a light-emitting device according to an embodiment;

[0014] Figure 8 is a diagram showing an example of a display device using the light-emitting device according to an embodiment;

[0015] Figure 9 is a diagram showing an example of a photoelectric conversion device using the light-emitting device according to an embodiment;

[0016] Figure 10 is a diagram showing an example of an electronic device using the light-emitting device according to an embodiment;

[0017] Figure 11A and Figure 11B are diagrams each showing an example of a display device using the light-emitting device according to an embodiment;

[0018] Figure 12 is a diagram showing an example of an illumination device using the light-emitting device according to an embodiment; and

[0019] Figure 13 is a diagram showing an example of a mobile device using the light-emitting device according to an embodiment. DETAILED DESCRIPTION

[0020] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the application. Various features will be described which can be implemented in the embodiments, but the application is not intended to be limited to having all of the features, and a plurality of such features can be appropriately combined. Moreover, in the drawings, the same or similar components are denoted by the same reference numerals, and repeated explanation of these components is omitted.

[0021] Reference will be made to Figures 1 to 13 An organic device according to an embodiment of the present application will be described. Figure 1 is a cross-sectional view showing a configuration example of an organic device 100 according to an embodiment. Figure 2 is a bird's-eye view of an upper surface of a portion of the organic device 100. Figure 3 is Figure 1 is an enlarged view of a region B enclosed by a broken line in Figure 2 is a cross section taken along a line A-A' of Figure 1 and shows an example in which a single pixel is formed of three light-emitting elements 10. Although the present embodiment shows an example of a pixel of a delta array, the present application is not limited to this. The pixel can be configured in a stripe array or a square array.

[0022] In the present embodiment, the organic device 100 can be an organic light-emitting device which will be described later. In this case, the organic layer will include, for example, a light-emitting layer. Further, the organic device 100 according to the present embodiment is not limited to the organic light-emitting device. The organic device 100 can also be a photoelectric conversion device. In this case, the organic layer will include, for example, a photoelectric conversion layer.

[0023] The organic device 100 includes a substrate 1 and a plurality of light-emitting elements 10 disposed on the substrate 1. Figure 1 Three light-emitting elements 10R, 10G, and 10B of the plurality of light-emitting elements 10 included in the organic device 100 are shown. The "R" of the light-emitting element 10R indicates that this element emits red light. Similarly, the "G" of the light-emitting element 10G indicates that this element emits green light, and the "B" of the light-emitting element 10B indicates that this element emits blue light. In the present specification, when a specific light-emitting element of the plurality of light-emitting elements 10 is indicated, a suffix such as "R" of the light-emitting element 10R will be added after the reference sign. In addition, when any one of the plurality of light-emitting elements 10 is indicated, it will simply be indicated as the light-emitting element "10". This applies in a similar manner to other constituent elements.

[0024] The organic device 100 includes the substrate 1, the conductive lines 9 and 11 disposed on a main surface 19 of the substrate 1, the interlayer insulating layer 12 disposed on the conductive lines 9 and 11, the lower electrode 2 disposed on the interlayer insulating layer 12, the organic layer 4 disposed on the lower electrode 2, and the upper electrode 5 disposed on the organic layer 4. Further, in an orthogonal projection with respect to the main surface 19, the region of the interlayer insulating layer 12 in which the organic layer 4 is disposed is disposed with the via holes 13 each provided with the conductive member 15 electrically connecting the corresponding conductive line 9 to the corresponding lower electrode 2, and the via hole 14 provided with the conductive member 18 electrically connecting the conductive line 11 to the upper electrode 5. The lower electrode 2 is separated according to the respective light-emitting elements 10 by the insulating layer 3. As shown, the organic layer 4 is continuously formed on the substrate 1 and shared by the plurality of light-emitting elements 10. Therefore, in the present embodiment, the region in which the organic layer 4 is disposed is a region in which the organic layer 4 is continuously (integrally) formed, and refers to a region including a portion in which the organic layer 4 is discontinuous (not formed) within the via hole 14, in an orthogonal projection with respect to the main surface 19. Figure 1

[0025] ​Here, the case where the organic device 100 is a light-emitting device will be described in detail. In the present embodiment, the organic device 100 is a top-emission light-emitting device that extracts light from the upper electrode 5. Therefore, the organic layer 4 includes a light-emitting layer as a functional layer. Further, the organic device 100 can include a protective layer 6 disposed to cover the upper electrode 5 and a plurality of color filters 7 disposed on the protective layer 6 in correspondence with the plurality of light-emitting elements 10. Further, the organic device 100 can also include a planarization layer 8 between the protective layer 6 and the color filters 7. Here, the case where the organic device 100 is a light-emitting device will be described. However, in the case where the organic device 100 is a photoelectric conversion device, the organic layer 4 will include a photoelectric conversion layer as a functional layer.

[0026] In the present embodiment, the organic layer 4 emits white light, and the color filters 7R, 7G, and 7B separate the white light emitted from the organic layer 4 into R, G, and B light beams, respectively. The color filters can also form a color conversion layer that absorbs light emitted from the organic layer 4 and converts the absorbed light into another color.

[0027] In the present embodiment, the terms "upper" and "lower" indicate the vertical direction in Figure 1 Therefore, the surface of the lower electrode 2 on the side of the substrate 1 will be referred to as the "lower surface" of the lower electrode 2, and the surface of the lower electrode 2 on the side of the organic layer 4 will be referred to as the "upper surface". Here, the lower surface of the lower electrode 2 indicates the surface in contact with the interlayer insulating layer 12. For example, in the case where a conductive member 15 or the like for connection to the lead wire 9 is connected to the lower surface of the lower electrode 2, the substantially flat portion other than the connection portion will be the lower surface of the lower electrode 2.

[0028] Although not shown in Figure 1 , the substrate 1 can include a lead wire and a drive circuit including a transistor connected to the lead wire 9 and the lead wire 11. The interlayer insulating layer 12 is disposed to the main surface 19 of the substrate 1. The interlayer insulating layer can be made of an inorganic compound such as silicon oxide, silicon nitride, silicon oxynitride, or the like. It can also be made of an organic compound such as a polyimide, a polyacrylic compound, or the like. Since the organic layer 4 such as the functional layer can be deteriorated due to moisture, the interlayer insulating layer can be made of an inorganic material from the viewpoint of preventing the entry of moisture. The interlayer insulating layer 12 can also be referred to as a planarization layer for reducing the roughness of the surface on which the lower electrode 2 is formed.

[0029] For example, a metal such as Al, Ag, or the like or an alloy obtained by doping such a metal with Si, Cu, Ni, Nd, or the like can be used for each of the conductive lines 9 and 11. Each of the conductive lines 9 and 11 can have a multilayer structure including a barrier layer. A metal such as Ti, W, Mo, Au, or the like or an alloy of such a metal can be used as a material of the barrier layer. The barrier layer can be a metal layer that forms an upper surface of each of the conductive lines 9 and 11. Although the conductive lines 9 and 11 are illustrated as being formed in the same layer in the configuration shown in FIG. 1, they can be formed in different layers from each other. Here, the conductive lines formed in the same layer mean conductive lines formed of the same conductive member film formed on the substrate 1, for example, by using a photolithography process or the like. Figure 1 The conductive lines 9 and 11 can be formed in different layers from each other. Here, the conductive lines formed in different layers mean conductive lines formed of different conductive member films formed on the substrate 1, for example, by using a photolithography process or the like.

[0030] A metal such as Al, Ag, Cu, W, or the like or an alloy obtained by doping such a metal with Si, Ni, Nd, or the like can be used as each of the conductive members 15. The conductive members 15 can also have a multilayer configuration including a barrier layer. A metal such as Ti, W, Mo, Au, Ta, or the like or an alloy of such a metal can be used as a material of the barrier layer. The barrier layer can be a layer in contact with a surface of the conductive member 15 on the side of the corresponding via 13.

[0031] A metal material having a reflectance of 80% or more with respect to the wavelength of light emitted from the organic layer 4 can be used for each of the lower electrodes 2. For example, a metal such as Al, Ag, or the like or an alloy obtained by doping such a metal with Si, Cu, Ni, Nd, or the like can be used for each of the lower electrodes 2. Here, the wavelength of light emitted means a spectral range of light emitted from the organic layer 4. If the lower electrode 2 has a high reflectance with respect to the wavelength of light emitted from the organic layer 4, the lower electrode 2 can have a multilayer structure including a barrier layer. A metal such as Ti, W, Mo, Au, or the like or an alloy of such a metal can be used as a material of the barrier layer. The barrier layer can be a metal layer disposed on an upper surface of the lower electrode 2.

[0032] As described above, the conductive members 15 can be formed of a metal such as Al, Ag, Cu, W, or the like or an alloy obtained by doping such a metal with Si, Ni, Nd, or the like. The conductive members 15 can also have a multilayer configuration including a barrier layer. A metal such as Ti, W, Mo, Au, Ta, or the like or an alloy of such a metal can be used as a material of the barrier layer. The barrier layer can be a layer in contact with a surface of the conductive member 15 on the side of the corresponding via 13. Figure 3As shown, the conductive member 18 includes a surface 184 in contact with the side surface 141 of the through-hole 14 and an inner wall 181 disposed along the side surface 141 of the through-hole 14 on the opposite side of the surface 184. The conductive member 18 can have a multilayer structure including a member 16 including the surface 184 in contact with the side surface 141 of the through-hole 14 and a member 17 forming the inner wall 181 along the side surface 141 of the through-hole 14. In this case, for example, the member 16 can contain the same material as the conductive member 15. Further, the member 16 can be made of the same material as the conductive member 15. In addition, in the case where the conductive member 18 has a multilayer structure, the member 17 can contain, for example, the same material as each lower electrode 2. Further, the member 17 can be made of the same material as each lower electrode 2. In the present embodiment, as shown in FIG. 1, the conductive member 18 has a two-layer structure formed of the member 16 and the member 17. However, a multilayer structure of three or more layers can be provided. Figure 1 and Figure 3 As shown, the conductive member 18 has a two-layer structure formed of a member 16 and a member 17. However, a multilayer structure of three or more layers can be provided.

[0033] The insulating layer 3 can cover the outer edge portion of each lower electrode 2 and be disposed between the organic layer 4 and each lower electrode 2. The plan view shape of the upper surface of the light emitting region of each light emitting element 10 can be a shape defined by a corresponding opening formed in the insulating layer 3. The insulating layer 3 is sufficient to have a function of electrically separating the lower electrode 2 below each light emitting element 10 and a function of defining the light emitting region of each light emitting element 10, and is not limited to the shape shown in Figure 1 and Figure 2

[0034] The insulating layer 3 can be formed, for example, by a chemical vapor deposition method (CVD method), a physical vapor deposition method (PVD method), or the like. The insulating layer 3 can be made of, for example, silicon nitride (SiN), silicon oxynitride (SiON), silicon oxide (SiO), or the like. The insulating layer 3 can be a multilayer film made of silicon nitride, silicon oxynitride, silicon oxide, or the like.

[0035] The organic layer 4 is disposed between the upper electrode 5 and the lower electrode 2 and the insulating layer 3. The organic layer 4 is formed continuously on the substrate 1 and can be shared by the plurality of light emitting elements 10. That is, the plurality of light emitting elements 10 can share one organic layer 4. The organic layer 4 can be integrally formed on the entire surface of the display region for displaying an image on the organic device 100 as a light emitting device.

[0036] ​The organic layer 4 can include a hole-transporting layer, a light-emitting layer, and an electron-transporting layer. Suitable materials can be selected for the organic layer 4 from the viewpoints of light-emitting efficiency, driving life, and optical interference. The hole-transporting layer can function as an electron-blocking layer or a hole-injecting layer, and can also have a multi-layer structure including a hole-injecting layer, a hole-transporting layer, and an electron-blocking layer. The light-emitting layer as a functional layer can have a multi-layer structure including light-emitting layers that emit different colors, and can also be a mixed layer in which light-emitting dopants for emitting different colors are mixed. The electron-transporting layer can function as a hole-blocking layer or an electron-injecting layer, and can also have a multi-layer structure including an electron-injecting layer, an electron-transporting layer, and a hole-blocking layer.

[0037] Further, the organic layer 4 can also include an intermediate layer disposed between the plurality of functional layers (light-emitting layers) and the plurality of functional layers. The organic device 100 can also be a light-emitting device having a tandem structure in which the intermediate layer is a charge generation layer. In the tandem structure, a charge-transporting layer such as a hole-transporting layer, an electron-transporting layer, or the like can be formed between the charge generation layer and the light-emitting layer.

[0038] The charge generation layer is a layer that contains an electron-donating material and an electron-accepting material and generates charges. The electron-donating material is a material that donates electrons, and the electron-accepting material is a material that accepts electrons. Since positive and negative charges are generated in the charge generation layer, the positive or negative charges can be supplied to the layers above and below the charge generation layer. The electron-donating material can be, for example, an alkali metal such as lithium or cesium. Further, the electron-donating material can be, for example, lithium fluoride, a lithium complex, cesium carbonate, a cesium complex, or the like. In this case, the electron-donating property can be exhibited by the electron-donating material together with a reducible material such as aluminum, magnesium, or calcium. The electron-accepting material can be, for example, an inorganic compound such as molybdenum oxide, or an organic compound such as [Dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile] or the like. The electron-accepting material and the electron-donating material can be mixed or stacked.

[0039] The upper electrode 5 is an electrode disposed on the organic layer 4. The upper electrode 5 is continuously formed on the substrate 1 and can be shared by the plurality of light-emitting elements 10. The upper electrode 5 can be integrally formed on the entire display region of the organic device 100 as a light-emitting device for displaying an image in a similar manner to the organic layer 4. The upper electrode 5 is a light-transmitting electrode for transmitting light emitted by the light-emitting layer of the organic layer 4. The upper electrode 5 can also be an electrode that transmits at least some of the light beams that reach the lower surface of the upper electrode 5. The upper electrode 5 can function as a semi-transmissive reflective layer (i.e., a layer having semi-transmissive reflectivity) that transmits some light beams but reflects the remaining light beams.

[0040] The upper electrode 5 can be made of, for example, a metal such as magnesium or silver, an alloy in which magnesium or silver is a main component, or an alloy material containing an alkali metal or an alkaline earth metal. An oxide conductor or the like can also be used as the upper electrode 5. The upper electrode 5 can have a multilayer structure as long as it has an appropriate transmittance.

[0041] The protective layer 6 can be made of, for example, a material having a low permeability to oxygen and moisture from the outside, such as silicon nitride, silicon oxynitride, aluminum oxide, silicon oxide, titanium oxide, or the like. Silicon nitride and silicon oxynitride can be formed using, for example, a CVD method. On the other hand, aluminum oxide, silicon oxide, and titanium oxide can be formed using an atomic layer deposition method (ALD method).

[0042] The combination of the constituent material and the manufacturing method of the protective layer 6 is not limited to those exemplified above, and can be appropriately selected in consideration of the thickness of the layer to be formed, the time required to form the layer, and the like. The protective layer 6 can have a single-layer structure or a multilayer structure as long as it transmits light transmitted through the upper electrode 5 and has sufficient moisture barrier properties.

[0043] Each color filter 7 can be formed on the protective layer 6. Similarly to the color filter 7R and the color filter 7G shown in FIG. 1, the color filters 7 can be in contact with each other without a gap. Furthermore, color filters of different colors can be arranged so as to overlap each other. Figure 1

[0044] In the present embodiment, a planarization layer 8 is formed between the protective layer 6 and the color filter 7. The planarization layer 8 can be made of, for example, an organic compound such as a polyimide, a polyacrylic compound, or the like. It can also have a multilayer structure formed by using an inorganic compound and an organic compound.

[0045] In the present embodiment, the through-hole 13 and the through-hole 14 are arranged in the region in which the organic layer 4 is formed in the orthogonal projection with respect to the main surface 19 of the substrate 1. Since the through-hole 14 in which the conductive member 18 for connecting the conductive wire 11 and the upper electrode 5 is arranged in the region in which the organic layer 4 is arranged, the area of the region in which the organic layer 4 is arranged (the area outside the region in which the organic layer 4 is formed) can be reduced more than in the case where the through-hole 14 is arranged outside the region in which the organic layer 4 is arranged. This will reduce the area of the entire organic device 100, and more organic devices 100 can be obtained from a single substrate. Therefore, it can reduce the cost of each organic device 100.

[0046] ​The via 14 can be formed simultaneously with the light-emitting element 10. In this case, the via 14 is disposed in the light-emitting region where the organic layer 4 is disposed. Therefore, compared to the case where the via 14 is disposed in a region where the organic layer 4 is not disposed, the voltage drop of the upper electrode 5 at the center of the light-emitting region can be suppressed. That is, the desired current can be easily supplied to the organic layer 4, thereby allowing for improved display characteristics when the organic device 100 is a light-emitting device. In addition, when the organic device 100 is a photoelectric conversion device, the characteristics of the obtained image can be improved.

[0047] Conductive members 15 for connecting wire 9 and lower electrode 2 are disposed in each through hole 13. In this embodiment, at least the upper part of the through hole 13 is filled with conductive members 15. For example, the conductive members 15 can be embedded in the upper part of the through hole 13 without gaps. As a result, uneven formation of the upper surface of the lower electrode 2 on the through hole 13 can be suppressed, and the upper surface of the lower electrode 2 will be flatter. Therefore, the organic layer 4 disposed on the lower electrode 2 will hardly become thinner, thereby suppressing the occurrence of leakage current between the upper electrode 5 and the lower electrode 2.

[0048] In this case, the upper part of the through hole 13 can be a portion exceeding 1 / 2 of the vertical length of the through hole 13. Alternatively, the upper part of the through hole 13 can be a portion exceeding 1 / 3 of the vertical length of the through hole 13. Furthermore, the upper part of the through hole 13 can be a portion exceeding 1 / 4 or 1 / 5 of the vertical length of the through hole 13. Additionally, the upper part of the through hole 13 can be the portion where the conductive member 15 and the lower electrode 2 are in contact with each other.

[0049] In addition, such as Figure 1 As shown, the through-hole 13 can be completely filled by the conductive member 15. In this case, the lower part of the through-hole 13, which is the area other than the upper part described above, may include a gap. The shape of the lower part of the conductive member 15 in the through-hole 13 is sufficient to allow the conductive member 15 to electrically connect the wire 9 and the lower electrode 2 within a desired resistance value range.

[0050] The following will refer to Figure 3 The configuration of the wires 11 used to electrically connect the upper electrode 5 to the organic device 100 is described in detail.

[0051] As described above, the conductive member 18 includes the surface 184 in contact with the side surface 141 of the through-hole 14 and the inner wall 181 disposed along the side surface 141 of the through-hole 14 on the opposite side of the surface 184. The inner wall 181 of the conductive member 18 disposed along the side surface 141 of the through-hole 14 can be a portion of the surface of the conductive member 18 substantially parallel to the side surface 141 of the through-hole 14. Unlike the through-hole 13, at least the upper portion of the through-hole 14 includes a region not filled with the conductive member 18. The side surface 141 of the through-hole 14 is covered with the conductive member 18 in the region of the through-hole 14 not filled with the conductive member 18. Since the through-hole 14 is not filled with the conductive member 18, the organic layer 4 is not formed on the inner wall 181 of the conductive member 18, and a region without the organic layer 4 is created. Thus, the upper electrode 5 can include a portion of the conductive member 18 disposed in the through-hole 14 in contact with the inner wall 181 of the conductive member 18 in a region in which the organic layer 4 is not formed on the inner wall 181 along the side surface 141 of the through-hole 14. As a result, the upper electrode 5 and a circuit portion such as a drive circuit formed in the substrate 1 can be electrically connected via the conductive member 18 and the conductive wire 11.

[0052] In an orthogonal projection with respect to the main surface 19 of the substrate 1, the length between the portions of the side surface of each through-hole 13 facing each other can be shorter than the length between the portions of the side surface 141 of the through-hole 14 facing each other. Here, the length between the portions of the side surface of each through-hole 13 and 14 is the length from the portion of the side surface of interest to the portion existing in the normal direction in the orthogonal projection with respect to the main surface 19 of the substrate 1. For example, in the case where each of the through-holes 13 and 14 is circular, the length between the portions of the side surface of each of the through-holes 13 and 14 facing each other is the length of the diameter of each of the circular through-holes 13 and 14. Alternatively, in the case where each of the through-holes 13 and 14 is square, the length between the portions of the side surface of each of the through-holes 13 and 14 facing each other is the length of one side of each of the square through-holes 13 and 14. Such a configuration allows each of the through-holes 13 to be filled with the conductive member 15 and allows the through-hole 14 to have a structure not filled with the conductive member 18 even in the case where the conductive member 15 and the conductive member 18 are formed simultaneously.

[0053] Furthermore, each of the through holes 13 and 14 can have a tapered structure. Therefore, in an orthogonal projection relative to the main surface 19 of the substrate 1, the length between the facing portions of the upper ends of the sides of the through hole 13 can be shorter than the length between the facing portions of the upper ends 142 of the sides 141 of the through hole 14. In an orthogonal projection relative to the main surface 19 of the substrate 1, the through holes 13 and 14 can have various shapes other than circular or square, such as rectangles, polygons, etc. Therefore, in an orthogonal projection relative to the main surface 19 of the substrate 1, the area of ​​the upper end of the through hole 13 can be smaller than the area of ​​the upper end 142 of the through hole 14. The relationship between the lengths or areas of the upper ends of the sides of each of the through holes 13 and 14 applies to cases where the shapes of each of the aforementioned through holes 13 and 14 are circular or square. By configuring each of the through holes 13 and 14 with this relationship, each through hole 13 will have a structure filled with conductive members 15, and the through hole 14 will have a structure without embedded conductive members 18.

[0054] like Figure 3 As shown, the organic layer 4 can cover a portion of the inner wall 181 of the conductive member 18, including the upper end 182 of the inner wall 181 along the side surface 141 of the through hole 14. This will suppress the thinning of the upper electrode 5 in the portion where the upper electrode 5 on the organic layer 4 bends towards the interior of the through hole 14 from a direction parallel to the main surface 19 of the substrate 1. Furthermore, this also suppresses the state where the upper electrode 5 is not partially formed. As a result, the resistance value of the upper electrode 5 will increase, thereby establishing a state that can suppress the increase of the operating voltage of the organic device 100. If a general semiconductor process is used, the upper end 142 of the side surface 141 of the through hole 14 will have an angle. In addition, the upper end 182 of the inner wall 181 of the conductive member 18 formed to cover the through hole 14 will tend to have an angle. On the other hand, forming the organic layer 4 on the upper end 182 of the angle of the inner wall 181 of the conductive member 18 allows the upper surface of the organic layer 4 to be formed into a curved shape. Therefore, the thinning of the upper electrode 5 disposed on the organic layer 4 can be suppressed. The manufacturing process of organic device 100 will be described later.

[0055] Japanese Patent Application Publication No. 2018-129265 discloses deposition in a manner in which an organic layer (electron transport layer) is not formed on the side surface of the recess of the power supply auxiliary electrode layer. In this case, in the portion in which the upper electrode is bent toward the side surface of the recess, the shape of the upper electrode (common electrode layer) changes sharply, thereby increasing the possibility that the film thickness of the upper electrode will decrease. In contrast, according to the present embodiment, the organic layer 4 formed on the upper end 182 of the inner wall 181 of the conductive member 18 will cover a portion of the inner wall 181 of the conductive member 18, and the upper surface of the organic layer 4 will have a curved shape. Thus, the change in the shape of the upper electrode 5 will be moderated, and it is possible to suppress a state in which the film thickness of the upper electrode 5 will decrease and a state in which a portion of the upper electrode 5 will not be partially formed.

[0056] Further, the effect of the organic layer 4 covering a portion of the inner wall 181 including the upper end 182 of the inner wall 181 of the conductive member 18 is to improve the moisture barrier performance of the protective layer 6. A case in which the protective layer 6 is formed on a corner (such as the corner of the upper end 182 of the inner wall 181 of the conductive member 18) will be considered. In this case, during the growth of the protective layer 6, the density of the protective layer 6 will tend to decrease in the region in which the portion of the protective layer 6 to be grown above the inner wall 181 of the conductive member 18 and the portion of the protective layer 6 to be grown above the upper surface of the conductive member 18 converge. Since the region in which the density of the protective layer 6 decreases reaches the lower portion of the protective layer 6, it will allow moisture to more easily enter the organic layer 4 via the low-density region. In contrast, according to the present embodiment, since the organic layer 4 covers a portion of the inner wall 181 including the upper end 182 of the inner wall 181 of the conductive member 18, the upper surface of the organic layer 4 will have a curved shape and have a structure in which the inclination angle continuously changes. Thus, the portions of the protective layer 6 growing at different inclination angles will continuously converge, thereby suppressing the formation of a region in which the density of the protective layer 6 will decrease.

[0057] Further, in the orthogonal projection with respect to the main surface 19 of the substrate 1, the length D between the portions of the upper end 182 of the inner wall 181 of the conductive member 18 along the side surface 141 of the through-hole 14 that face each other can be longer than twice the thickness C of the organic layer 4 (D > 2C). This will suppress a state in which the inner side of the inner wall 181 of the conductive member 18 will be buried in the organic layer 4. As a result, it is possible to make the upper electrode 5 and the conductive member 18 more easily contact each other.

[0058] As described above, according to the present embodiment, by filling the upper portions of the through holes 13 with the conductive members 15 and suppressing the formation of the concavo-convex on the upper surface of the lower electrode 2 formed on the through holes 13, the thinning of the organic layer 4 disposed on the upper surface of the lower electrode 2 will be suppressed. As a result, the generation of the leakage current between the upper electrode 5 and the lower electrode 2 will also be suppressed. Further, the through holes 14 in which the conductive members 18 for connecting the conductive lines 11 and the upper electrode 5 are disposed are disposed within the region in which the organic layer 4 is disposed. Therefore, the area of the region in which the organic layer 4 is not disposed is reduced, and the area of the entire organic device 100 is reduced. As a result, as described above, the cost of each organic device 100 can be suppressed. Further, based on the above-described shape of the upper electrode 5 and the organic layer 4 formed near the upper end 182 of the inner wall 181 of the conductive member 18, the thinning of the upper electrode 5 is suppressed, and the upper electrode 5 and the conductive member 18 will be able to be brought into contact with each other more reliably. As a result, the reliability of the organic device 100 can be improved. In this way, according to the present embodiment, the manufacturing cost of the organic device 100 can be suppressed, and an organic device 100 in which the generation of the leakage current between the upper electrode 5 and the lower electrode 2 is suppressed can be realized. Further, an organic device 100 having high reliability can be realized.

[0059] The present application will be described below with reference to Figures 4A to 4E A method of manufacturing the above-described organic device 100 will be described. First, after forming a conductive layer made of metal or the like on the substrate 1, as shown in FIG. 2, the respective conductive lines 9 and the conductive lines 11 are formed by using a photolithography method. Next, the interlayer insulating layer 12 is deposited, and the upper surface of the interlayer insulating layer 12 is planarized by using, for example, a CMP method, a back-etching method, or the like. Further, as shown in FIG. 3, the respective through holes 13 and the through holes 14 extending through the interlayer insulating layer 12 are formed. Figure 4A Figure 4B

[0060] Next, the respective conductive members 15 and the members 16 including the surface 184 of the conductive member 18 that will contact the side surface 141 of the through hole 14 are formed. First, a first material film of the respective conductive members 15 and the members 16 is formed using a CVD method or the like. At this time, the respective through holes 13 can be filled with the first material film. On the other hand, in the through holes 14, the first material film will cover only the side surface 141, and will not be embedded in the through holes 14. Next, the first material film formed on the upper surface of the interlayer insulating layer 12 is polished or etched by using a CMP method, a back-etching method, or the like, and the respective conductive members 15 and the members 16 are formed as shown in FIG. 4. Figure 4C

[0061] Next, the respective lower electrodes 2 and the members 17 of the conductive members 18 are formed. First, a second material film of the respective lower electrodes 2 and the members 17 is formed using a sputtering method or the like. Next, the respective lower electrodes 2 and the members 17 shown in FIG. 6 are formed by patterning using a photolithography method or the like. Figure 4D ​​​​

[0062] Subsequently, a third material film of the insulating layer 3 is formed using a sputtering method or the like, and is patterned by using a photolithography method or the like. In this process, the conductive member 18 formed in the through-hole 14 needs to be exposed. That is, since the third material film formed on the inner wall 181 of the conductive member 18 needs to be etched, isotropic dry etching or wet etching can be used in the etching process of the third material film. By this process, the insulating layer 3 as shown in Figure 4E will be formed.

[0063] The inner wall 181 of the upper surface of the conductive member 18 can be made of titanium or a titanium-containing alloy. By making the inner wall 181 of the conductive member 18 contain titanium, the process resistance after the formation of the conductive member 18 will be improved, and the formation of an oxide film (insulating film) on the inner wall 181 of the conductive member 18 will be suppressed. Therefore, even in the case where the structure as shown in Figure 4E undergoes atmospheric exposure, the increase in the resistance value due to the presence of the insulating film between the upper electrode 5 and the conductive member 18 will be suppressed. As a result, the increase in the operating voltage of the organic device 100 will be prevented.

[0064] Next, the formation of the organic layer 4 and the upper electrode 5 will be described with reference to Figure 5A and Figure 5B . Figure 5A is a view showing the positional relationship between the deposition sources 201 and 202 and the substrate 1 when the organic layer 4 and the upper electrode 5 are to be formed. The substrate 1 is rotated when the organic layer 4 and the upper electrode 5 are to be formed. The deposition source 202 for forming the organic layer 4 and the deposition source 201 for forming the upper electrode 5 are both disposed at a position at a distance R from the center of rotation of the substrate 1 in a direction parallel to the main surface 19 of the substrate 1. Further, the deposition source 202 for forming the organic layer 4 is disposed at a position at a distance i from the center of rotation of the substrate 1 in a direction perpendicular to the main surface 19 of the substrate 1. Further, the deposition source 201 for forming the upper electrode 5 is disposed at a position at a distance h from the center of rotation of the substrate 1 in a direction perpendicular to the main surface 19 of the substrate 1. At this time, the distance i is shorter than the distance h. That is, the deposition source 202 for forming the organic layer 4 is disposed closer to the substrate 1 than the deposition source 201 for forming the upper electrode 5. In Figure 5A , the deposition source 201 and the deposition source 202 are illustrated as if they are disposed in a single deposition apparatus (chamber). However, Figure 5A is merely a view showing the positional relationship between the substrate 1 and the deposition sources 201 and 202 when the organic layer 4 and the upper electrode 5 are to be formed. Therefore, the deposition source 201 and the deposition source 202 can be disposed in separate deposition apparatuses (chambers) or can be disposed in the same deposition apparatus (chamber).

[0065] Figure 5Bis an enlarged view of the organic device 100 at a position 204 at a distance r from the center of rotation of the substrate 1, which has been formed to the above-described Figure 4E process. Based on the configuration explained with reference to Figure 5A , the incident angle 205 at which the deposition material enters from the deposition source 201 used to form the upper electrode 5 will be different from the incident angle 206 at which the deposition material enters from the deposition source 202 used to form the organic layer 4. As a result, the deposition material for the upper electrode 5 will reach a position 207 deeper than a position 208, which is the limit of the depth at which the deposition material for the organic layer 4 enters the through-hole 14. As a result, the upper electrode 5 is able to come into contact with the inner wall 181 of the conductive member 18. Although the case where the deposition method is used as the formation method of the organic layer 4 has been explained here, the organic layer 4 can also be formed by using, for example, a laser ablation method or the like.

[0066] Figure 6 is a view showing a modification of the through-hole 14 and the conductive member 18 shown in Figure 3 . In the configuration shown in Figure 6 , the inner wall 181 of the conductive member 18 along the side surface 141 of the through-hole 14 includes an inclined portion 185 whose angle with respect to a surface parallel to the main surface 19 of the substrate 1 is a first angle, and an inclined portion 186 disposed between the inclined portion 185 and the upper end 182 of the inner wall 181 and whose angle with respect to the surface parallel to the main surface 19 is a second angle smaller than the first angle. That is, the inclination of the portions near the upper ends 142 and 182 of the conductive member 18 and the through-hole 14 has become gentler. By configuring so that the inclination of the inner wall 181 of the region near the upper end 182 of the conductive member 18 becomes gentler, the upper electrode 5 will become more difficult to thin and more difficult to generate a low-density region in the protective layer 6, compared to the configuration shown in Figure 3 . That is, the reliability of the organic device 100 will be further improved.

[0067] Figure 6 The structure shown in is able to be formed by etching the portion of the through-hole 14 to which the inclined portion 186 is to be disposed under high isotropic conditions. For example, dry etching can be performed under high anisotropic conditions to extend the through-hole 14 through the interlayer insulating layer, and dry etching or wet etching can be performed under high isotropic conditions to form the portion of the through-hole 14 to which the inclined portion 186 is to be disposed. The etching under high anisotropic conditions can be performed first, or the etching under high isotropic conditions can be performed first.

[0068] The light emitting element 10 will be described here. Each light emitting element 10 is configured by forming an anode, an organic compound layer, and a cathode on the substrate 1. The protective layer 6 and the color filter 7 can be formed on the cathode. If the color filter 7 is to be configured, the planarization layer 8 can be configured between the protective layer 6 and the color filter 7. The planarization layer 8 can be made of an acrylic resin or the like.

[0069] The above embodiment describes that a semiconductor substrate such as silicon will be used as the substrate 1. However, the present application is not limited to this. Quartz, glass, a silicon wafer, resin, metal, or the like can be used as the substrate 1. In addition, as described in the above embodiment, a switching element such as a transistor and a wire can be configured on the substrate 1, and an insulating layer can be configured on these elements. The material of the insulating layer is not particularly limited, as long as it is a material that can form a contact hole to ensure conduction between the anode of the light emitting element 10 and the transistor formed on the substrate and can ensure insulation from a wire that is not intended to be connected. For example, resin such as polyimide, silicon oxide, silicon nitride, or the like can be used.

[0070] A pair of electrodes (the upper electrode 5 described above and each lower electrode 2) can be used as electrodes. The pair of electrodes can have an anode and a cathode. If an electric field is to be applied in the direction in which each light emitting element 10 emits light, the electrode having a higher potential will be the anode, and the other electrode will be the cathode. It can also be said that the electrode that supplies holes to the light emitting layer of the light emitting element 10 is the anode, and the electrode that supplies electrons is the cathode.

[0071] As a material constituting the anode, a material having a large work function can be used. For example, a metal such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, or the like, a mixture containing some of the above metals, an alloy in which some of the above metals are combined, or a metal oxide such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), or indium zinc oxide can be used as the anode. In addition, a conductive polymer such as polyaniline, polypyrrole, or polythiophene can also be used as the anode.

[0072] One of these electrode materials can be used alone, or two or more of them can be used in combination. The anode can be formed of a single layer or multiple layers.

[0073] When the anode is used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, an alloy thereof, a laminate thereof, or the like can be used. When the anode is used as a transparent electrode, an oxide transparent conductive layer made of indium tin oxide (ITO), indium zinc oxide, or the like can be used, but the present application is not limited to this. The electrode can be formed using a photolithography technique.

[0074] On the other hand, as a material constituting the cathode, a material having a small work function can be used. Examples of the material include alkali metals such as lithium, alkaline earth metals such as calcium, metals such as aluminum, titanium, manganese, silver, lead, or chromium, and mixtures containing some of them. Alternatively, an alloy in which these metals are combined can also be used. For example, a magnesium-silver alloy, an aluminum-lithium alloy, an aluminum-magnesium alloy, a silver-copper alloy, a zinc-silver alloy, or the like can be used as the cathode. A metal oxide such as indium tin oxide (ITO) can also be used. One of these electrode materials can be used alone, or two or more of them can be used in combination. The cathode can have a single-layer structure or a multi-layer structure. For the cathode, silver can be used, or a silver alloy can be used to suppress aggregation of silver. The proportion of the alloy is not limited, as long as the aggregation of silver can be suppressed. For example, the ratio between silver and a material other than silver can be 1:1.

[0075] The cathode can be a top emission element using an oxide conductive layer made of ITO or the like, or a bottom emission element using a reflective electrode made of aluminum (Al) or the like, and is not particularly limited. The method of forming the cathode is not particularly limited, but if direct current sputtering or alternating current sputtering is used, good film coverage is provided and the resistance is easily reduced.

[0076] A protective layer 6 can be provided to the cathode. For example, by attaching a glass provided with a moisture absorbent to the cathode, penetration of water or the like into a light-emitting layer such as an organic EL layer or the like can be suppressed, and occurrence of display defects can be suppressed. Furthermore, as another embodiment, a passivation film made of silicon nitride or the like can be provided to the cathode to suppress penetration of water or the like into the light-emitting layer. For example, after the cathode is formed, it is transferred to another chamber without breaking the vacuum, a silicon nitride film having a thickness of 2 μm can be formed by a chemical vapor deposition method (CVD method), thereby obtaining the protective layer 6. The protective layer 6 can be provided using an atomic deposition method (ALD method) after the film is formed using the CVD method.

[0077] A color filter 7 can be provided to the protective layer 6. For example, the color filter 7 can be provided to another substrate in consideration of the size of the light-emitting element 10, and the substrate provided with the color filter 7 can be bonded to the substrate 1 on which the light-emitting element 10 is provided. Alternatively, the color filter 7 can be patterned on the above-described protective layer 6 by using a photolithography technique. The color filter 7 can be formed of a polymeric material.

[0078] A planarization layer 8 can be provided between the color filter 7 and the protective layer 6. The planarization layer 8 can be formed of an organic compound, and can be made of a low molecular material or a polymeric material. For example, the planarization layer 8 can be formed of a polymeric organic compound.

[0079] The planarization layers 8 can be provided above and below the color filters, and they can use the same or different materials. More specifically, examples of the materials include polyvinylcarbazole resins, polycarbonate resins, polyester resins, ABS resins, acrylic resins, polyimide resins, phenol resins, epoxy resins, silicone resins, and urea resins.

[0080] A counter substrate can be provided on the planarization layer 8. The counter substrate is called so because it is provided at a position corresponding to the above-described substrate. The constituent material of the counter substrate can be the same as the constituent material of the above-described substrate 1.

[0081] The organic layer 4 (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) of the light emitting element 10 according to the embodiment of the present application is formed by a method described later. The organic layer 4 can be formed by a dry process using a vacuum deposition method, an ionization deposition method, a sputtering method, a plasma method, etc. Instead of the dry process, a wet process of forming a layer by dissolving a solute in a proper solvent and using a publicly known coating method (e.g., a spin coating method, an immersion method, a casting method, an LB method, an inkjet method, etc.) can be used.

[0082] Here, when the organic layer 4 is formed by a vacuum deposition method, a solution coating method, etc., crystallization, etc. hardly occur and excellent time stability is obtained. Further, when the organic layer 4 is formed using a coating method, a film can be formed in combination with a proper adhesive resin.

[0083] Examples of the adhesive resin include polyvinylcarbazole resins, polycarbonate resins, polyester resins, ABS resins, acrylic resins, polyimide resins, phenol resins, epoxy resins, silicone resins, and urea resins. However, the adhesive resin is not limited thereto.

[0084] One of these adhesive resins can be used alone as a homopolymer or a copolymer, or two or more of them can be used in combination. Further, additives of a publicly known plasticizer, antioxidant, ultraviolet absorber, etc. can also be used as needed.

[0085] Next, an organic device according to the present embodiment will be described with reference to the drawings. Figure 7 is a schematic cross-sectional view showing an example of an organic device 100 including a light emitting element 2326 which is an example of the above-described light emitting element 10 and a TFT element connected to the light emitting element 2326. The TFT element is an example of an active element.

[0086] As Figure 7The light emitting device 2310 of the illustrated example of the organic device 100 is provided with a substrate 2311 of glass, silicon, or the like, and an insulating layer 2312 thereon. An active element such as a TFT 2318 is arranged on the insulating layer 2312, and is provided with a gate electrode 2313, a gate insulating film 2314, and a semiconductor layer 2315 of the TFT 2318. Figure 7 The TFT 2318 is an example of a drive circuit of a transistor. The TFT 2318 further includes a semiconductor layer 2315, a drain electrode 2316, and a source electrode 2317. An insulating film 2319 is provided on the TFT 2318. The source electrode 2317 and an anode 2321 forming a light emitting element are connected via a contact hole 2320 formed in the insulating film 2319.

[0087] Note that the method of electrically connecting the electrodes (anode and cathode) included in the light emitting element and the electrodes (source electrode and drain electrode) included in the TFT is not limited to Figure 7 the illustrated method. That is, one of the anode and the cathode is electrically connected to one of the source electrode and the drain electrode of the TFT 2318. TFT denotes thin film transistor.

[0088] In Figure 7 the illustrated light emitting device 2310, the organic layer 2322 is illustrated as one layer. However, the organic layer 2322 can include a plurality of layers. A protective layer 2324 and 2325 is provided to the cathode 2323 to suppress deterioration of the light emitting element.

[0089] A transistor is used as Figure 7 a switching element in the illustrated light emitting device 2310, but can also be used as other switching elements.

[0090] Figure 7 The transistor used in the illustrated light emitting device 2310 is not limited to a transistor using a single-crystal silicon wafer, but can also be a thin film transistor including an active layer on an insulating surface of a substrate. Examples of the active layer include single-crystal silicon, amorphous silicon, non-single-crystal silicon such as microcrystalline silicon, and non-single-crystal oxide semiconductor such as indium zinc oxide and indium gallium zinc oxide. Note that the thin film transistor is also referred to as a TFT element.

[0091] Figure 7 The transistor included in the illustrated light emitting device 2310 can be formed in a substrate such as a Si substrate. Here, formed in a substrate means that the transistor is formed by processing the substrate itself such as a Si substrate. In other words, including the transistor in the substrate can be regarded as integrally forming the substrate and the transistor.

[0092] The light emission luminance of the light emitting element 10 according to the present embodiment is controlled by a TFT as an example of a switching element, and the light emitting element is provided in a plurality of planes to display an image with the light emission luminance of each element. Note that the switching element according to the present embodiment is not limited to a TFT, and can be a transistor formed of low-temperature polysilicon or an active matrix driver formed on a substrate such as a Si substrate. The term "on a substrate" can mean "in a substrate". The choice of whether to provide a transistor in a substrate or to use a TFT is based on the size of the display unit. For example, if the size is about 0.5 inches, an organic light emitting element can be provided to a Si substrate.

[0093] Next, an application example of the organic device 100 according to each of the above-described embodiments will be described. Figures 8 to 13 Application examples of the organic device in which the above-described organic layer 4 includes a light emitting layer will be described. In addition, the organic device 100 can be applied to an exposure light source of an electrophotographic image forming apparatus, a backlight of a liquid crystal display apparatus, a light emitting device including a color filter in a white light source, and the like. The display apparatus can be an image information processing apparatus including an image input unit for inputting image information from a face array CCD, a line array CCD, a memory card, or the like, and an information processing unit for processing the input information, and displaying the input image on a display unit. In addition, the display unit included in a camera or an inkjet printer can have a touch panel function. The driving type of the touch panel function can be infrared, capacitive, resistive film, or electromagnetic induction, and is not particularly limited. The display apparatus can be used for a display unit of a multifunction printer.

[0094] Figure 8 is a schematic view showing an example of a display apparatus using the organic device 100 according to the present embodiment. The display apparatus 2400 can include a touch panel 2403, a display panel 2405, a frame 2406, a circuit board 2407, and a battery 2408 between an upper cover 2401 and a lower cover 2409. Flexible printed circuits (FPCs) 2402 and 2404 are connected to the touch panel 2403 and the display panel 2405, respectively. An active element such as a transistor is provided on the circuit board 2407. If the display apparatus 2400 is not a portable device, the battery 2408 is not needed. Even when the display apparatus 2400 is a portable device, the battery 2408 is not necessarily provided at this position. The above-described organic device 100 in which the light emitting layer of the organic layer 4 contains an organic light emitting material such as an organic EL can be applied to the display panel 2405. The organic device 100 serving as the display panel 2405 is operated by an active element such as a transistor provided on the circuit board 2407.

[0095] Figure 8The display device 2400 illustrated can also function as a display unit of an optical-electric conversion device (imaging device) including an optical unit having a plurality of lenses and an imaging element for receiving light that has passed through the optical unit and opto-electrically converting the light into an electric signal. The optical-electric conversion device can have a display unit for displaying information acquired by the imaging element. In addition, the display unit can be a display unit exposed to the outside of the optical-electric conversion device or a display unit arranged in a viewfinder. The optical-electric conversion device can also be a digital camera or a digital video camera. Furthermore, the organic device 100 according to the present embodiment, in which the functional layer of the organic layer 4 includes an optical-electric conversion layer, can be used as an opto-electric conversion element of an optical-electric conversion device.

[0096] Figure 9 is a schematic view showing an example of an optical-electric conversion device using the organic device 100 according to the present embodiment. The optical-electric conversion device 2500 can include a viewfinder 2501, a rear display 2502, an operation unit 2503, and a housing 2504. The optical-electric conversion device 2500 can also be referred to as an imaging device. The above-described organic device 100 in which the light-emitting layer of the organic layer 4 contains an organic light-emitting material can be applied to the viewfinder 2501 as a display unit. In this case, the organic device 100 can display not only an image to be captured but also environmental information, a shooting instruction, and the like. Examples of the environmental information are the intensity and direction of external light, the moving speed of a subject, and the possibility that the subject is covered by an obstacle.

[0097] The timing suitable for imaging is usually very short time, and thus it is preferable to display information as soon as possible. Therefore, the above-described organic device 100 in which the light-emitting layer of the organic layer 4 contains an organic light-emitting material can be used as the viewfinder 2501. This is because the organic light-emitting material has a high response speed. With the organic device 100 using the organic light-emitting material, a display speed is obtained. The organic device 100 is more suitable for such devices than a liquid crystal display device.

[0098] The optical-electric conversion device 2500 includes an optical unit (not shown). The optical unit has a plurality of lenses, and forms an image of light that has passed through the optical unit on an opto-electric conversion element (not shown) housed in the housing 2504 and receiving the light. The focal points of the plurality of lenses can be adjusted by adjusting the relative positions. This operation can also be performed automatically.

[0099] The above-described organic device 100 in which the light-emitting layer of the organic layer 4 contains an organic light-emitting material can be applied to a display unit of an electronic device. At this time, the organic device 100 can have both a display function and an operation function. Examples of the portable terminal are a portable telephone such as a smartphone, a tablet, and a head-mounted display device.

[0100] Figure 10is a schematic view showing an example of an electronic device using the organic device 100 according to the present embodiment. The electronic device 2600 includes a display unit 2601, an operation unit 2602, and a housing 2603. The housing 2603 can accommodate a circuit, a printed board having the circuit, a battery, and a communication unit. The operation unit 2602 can be a button or a touch panel type reaction unit. The operation unit 2602 can also be a biometric identification unit that performs unlocking and the like by identifying a fingerprint. A portable device including the communication unit can also be regarded as a communication device. The above-described organic device 100 in which the light-emitting layer of the organic layer 4 contains an organic light-emitting material is applicable to the display unit 2601.

[0101] Figure 11A and Figure 11B is a schematic view showing an example of a display device using the organic device 100 according to the present embodiment. Figure 11A A display device such as a television monitor or a PC monitor is shown. The display device 2700 includes a frame 2701 and a display unit 2702. The above-described organic device 100 in which the light-emitting layer of the organic layer 4 contains an organic light-emitting material is applicable to the display unit 2702. The display device 2700 can further include a stand 2703 that supports the frame 2701 and the display unit 2702. The stand 2703 is not limited to the form shown. For example, the lower side of the frame 2701 can also function as the stand 2703. In addition, the frame 2701 and the display unit 2702 can be curved. The radius of curvature in this case can be 5,000 mm or more (inclusive) and 6,000 mm or less (inclusive). Figure 11A

[0102] Figure 11B is a schematic view showing another example of a display device using the organic device 100 according to the present embodiment. Figure 11B The display device 2710 shown can be folded, that is, the display device 2710 is a so-called foldable display device. The display device 2710 includes a first display unit 2711, a second display unit 2712, a housing 2713, and a folding point 2714. The above-described organic device 100 in which the light-emitting layer of the organic layer 4 contains an organic light-emitting material can be applicable to each of the first display unit 2711 and the second display unit 2712. The first display unit 2711 and the second display unit 2712 can also be one seamless display device. The first display unit 2711 and the second display unit 2712 can be divided by the folding point. The first display unit 2711 and the second display unit 2712 can display different images, or can display one image together.

[0103] Figure 12 ​is a schematic diagram showing an example of a lighting device using the organic device 100 according to the present embodiment. The lighting device 2800 can include a housing 2801, a light source 2802, a circuit board 2803, an optical film 2804, and a light diffusion unit 2805. The above-described organic device 100 whose light-emitting layer of the organic layer 4 contains an organic light-emitting material is applicable to the light source 2802. The optical film 2804 can be a color filter that improves color rendering properties of the light source. The light diffusion unit 2805 can project light of the light source into a wide range by efficiently diffusing light when lighting or the like is performed. The lighting device 2800 can further include a cover located at the outermost portion as needed. The lighting device 2800 can include both the optical film 2804 and the light diffusion unit 2805, or can include only one of them.

[0104] The lighting device 2800 is a device for illuminating a room or the like. The lighting device 2800 can emit white light, natural white light, or light of any color from blue to red. The lighting device 2800 can further include a light control circuit for controlling these light components. The lighting device 2800 can further include a power supply circuit connected to the organic device 100 serving as the light source 2802. The power supply circuit can be a circuit for converting an AC voltage into a DC voltage. "White" has a color temperature of 4,200 K, and "natural white" has a color temperature of 5,000 K. The lighting device 2800 can also have a color filter. Furthermore, the lighting device 2800 can have a heat dissipation unit. The heat dissipation unit dissipates heat inside the device to the outside of the device, examples of which are a metal and liquid silicon having a high specific heat.

[0105] Figure 13 is a schematic diagram of an automobile including a tail light as an example of a vehicle lighting appliance using the organic device 100 according to the present embodiment. The automobile 2900 has a tail light 2901 that can be turned on when a brake operation or the like is performed. The organic device 100 according to the present embodiment can be used as a headlight as a vehicle lighting appliance. The automobile is an example of a mobile device, and the mobile device can be a ship, a drone, an airplane, a rail vehicle, or the like. The mobile device can include a main body and a mobile device lighting appliance installed in the main body. The lighting appliance can also be a device that sends a notification about a current position of the main body.

[0106] The above-described organic device 100 whose light-emitting layer of the organic layer 4 contains an organic light-emitting material is applicable to the tail light 2901. The tail light 2901 can have a protective member for protecting the organic device 100 serving as the tail light 2901. The material of the protective member is not limited as long as the material is a transparent material having a certain degree of high strength, and can be polycarbonate. The protective member can also be formed by mixing furandicarboxylic acid derivatives or acrylonitrile derivatives in polycarbonate.

[0107] The automobile 2900 can include a vehicle body 2903 and a window 2902 mounted to the vehicle body 2903. The window can be a window for checking the front and rear of the automobile, and can also be a transparent display. The organic device 100 whose light-emitting layer of the organic layer 4 contains an organic light-emitting material can be used as the transparent display. In this case, the constituent material of the electrode such as the organic device 100 is formed of a transparent member.

[0108] According to the present application, a technique that is advantageous in suppressing the manufacturing cost of an organic device and suppressing a leakage current can be provided.

[0109] While the present application has been described with reference to exemplary embodiments, it is to be understood that the application is not limited to the disclosed exemplary embodiments. The scope of the claims is to be accorded the broadest interpretation so as to encompass all such variations, equivalents and alternatives.

Claims

1. An organic device comprising a substrate, a first conductor and a second conductor disposed over a main surface of the substrate, an interlayer insulating layer disposed over the first conductor and the second conductor, a first electrode disposed over the interlayer insulating layer, an organic layer disposed over the first electrode, and a second electrode disposed over the organic layer, characterized in that, in a region of the interlayer insulating layer in which the organic layer is disposed in an orthogonal projection with respect to the main surface, a first via and a second via are disposed, wherein a first conductive member configured to electrically connect the first conductor and the first electrode is disposed in the first via, and a second conductive member configured to electrically connect the second conductor and the second electrode is disposed in the second via, at least an upper portion of the first via is filled with the first conductive member, at least an upper portion of the second via includes a region in which the second conductive member is not filled, a side surface of the second via is covered with the second conductive member in the region of the second via in which the second conductive member is not filled, an inner wall of the second conductive member along the side surface of the second via includes a region in which the organic layer is not present, the second electrode is in contact with the region in which the organic layer is not present in the inner wall of the second conductive member along the side surface of the second via, the organic layer covers a portion including an upper end of the inner wall of the second conductive member along the side surface of the second via, and an upper surface of the organic layer has a curved shape in a vicinity of the upper end of the inner wall of the second conductive member. The first via is completely filled with the first conductive member. In an orthogonal projection with respect to the main surface, an area of an upper end of the first via is smaller than an area of an upper end of the second via. In an orthogonal projection with respect to the main surface, a length between portions of the side surface of the first via that face each other is shorter than a length between portions of the side surface of the second via that face each other. In an orthogonal projection with respect to the main surface, a length between portions of an upper end of the side surface of the first via that face each other is shorter than a length between portions of an upper end of the side surface of the second via that face each other. In an orthogonal projection with respect to the main surface, a length between portions of the upper end of the inner wall of the second conductive member along the side surface of the second via that face each other is longer than twice a thickness of the organic layer. The inner wall of the second conductive member along the side surface of the second via includes a first inclined portion and a second inclined portion, an angle of the first inclined portion with respect to a surface parallel to the main surface is a first angle, an angle of the second inclined portion with respect to a surface parallel to the main surface is a second angle smaller than the first angle, and the second inclined portion is disposed between the first inclined portion and an upper end of the inner wall of the second conductive member along the side surface of the second via.

8. The device according to claim 1, further comprising: a protective layer disposed over the second electrode. ​ 2. The device of claim 1, wherein, ​ 3. The device of claim 1, wherein, ​ 4. The device of claim 1, wherein, ​ 5. The device of claim 1, wherein, ​ 6. The device of claim 1, wherein, ​ 7. The device of claim 1, wherein, ​ ​ ​ The protective layer is in contact with the inner wall of the second conductive member along the side surface of the second through-hole.

9. The device of claim 1, wherein, The inner wall of the second conductive member along the side surface of the second through-hole contains titanium.

10. The device of claim 1, wherein, The second conductive member has a multilayer structure including a first member and a second member, the first member is configured to contact the side surface of the second through-hole, and the second member is configured to form the inner wall of the second conductive member along the side surface of the second through-hole, The first member contains the same material as the first conductive member, and The second member contains the same material as the first electrode.

11. The device of claim 1, wherein, The organic layer includes one of a light-emitting layer and a photoelectric conversion layer.

12. A display device comprising: the organic device according to any one of claims 1 to 11; and an active element connected to the organic device.

13. A photoelectric conversion device comprising: an optical unit including a plurality of lenses; an image pickup element configured to receive light that has passed through the optical unit; and a display unit configured to display an image, wherein the display unit is a display unit configured to display an image picked up by the image pickup element and includes the organic device according to any one of claims 1 to 11.

14. An electronic device comprising: a housing in which a display unit is arranged; and a communication unit configured to communicate with an external device, wherein the display unit includes the organic device according to any one of claims 1 to 11.

15. An illumination device comprising: a light source; and at least one of a light diffusion unit and an optical film, wherein the light source includes the organic device according to any one of claims 1 to 11.

16. A mobile device illumination appliance comprising: the organic device according to any one of claims 1 to 11; and a protective member configured to protect the organic device.

17. A mobile device comprising: a main body; and an illumination appliance arranged to the main body, wherein the illumination appliance includes the organic device according to any one of claims 1 to 11. ​

Citation Information

Patent Citations

  • Organic el display panel, and method of manufacturing organic el display panel

    JP2018129265A

  • Auxiliary lines reducing resistance in a cathode of an organic light emitting display device

    CN106057844A

  • Organic light emitting display device and method of fabricating the same

    KR1020170014728A