Substrate processing device and substrate processing method

Abstract

A substrate processing device comprises: a chuck that holds a substrate horizontally; a processing unit that presses a processing tool against the outer periphery of the substrate held by the chuck to process the substrate; and a lower cup that recovers processing chips that fall from the substrate within the entire periphery of the substrate, and a discharge port for discharging the processing chips is formed in the lower cup.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] Patent Document 1 discloses a technique for grinding the outer periphery of a semiconductor wafer into an L-shape. The semiconductor wafer is formed by bonding two silicon wafers, and the chamfer of one silicon wafer is removed by grinding. The purpose of removing the chamfer is to prevent chipping, etc.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 9-216152 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] One aspect of the present disclosure provides a technology capable of appropriately recovering machining chips generated when a machining tool is pressed against the outer periphery of a substrate and maintaining a clean state.

[0008] Solutions for solving problems

[0009] A substrate processing device according to a technical solution of the present disclosure comprises:

[0010] a chuck that holds the substrate horizontally;

[0011] a processing unit that presses a processing tool against the outer periphery of the substrate held by the chuck to process the substrate; and

[0012] a lower cup for collecting machining chips dropped from the substrate within the entire periphery of the substrate,

[0013] The lower cup is formed with a discharge port for discharging the machining chips.

[0014] Effects of the Invention

[0015] According to an aspect of the present disclosure, machining chips generated when a machining tool is pressed against the outer periphery of a substrate can be appropriately recovered, and a clean state can be maintained. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 1 is a top view showing a thinning system according to one embodiment.

[0017] Figure 2 It is a cross-sectional view showing a processing substrate, a device layer, and a support substrate according to one embodiment.

[0018] Figure 31 is a flowchart showing a thinning method according to one embodiment.

[0019] Figure 4A Yes means Figure 3 A cross-sectional view of an example of laser processing is shown.

[0020] Figure 4B Yes means Figure 4A A top view showing the positions of the first dividing plane and the second dividing plane.

[0021] Figure 5 Yes means Figure 3 A cross-sectional view of an example of chamfer removal is shown.

[0022] Figure 6 Yes means Figure 3 A cross-sectional view of one example of thinning is shown.

[0023] Figure 7 It is a top view showing a chamfering device according to one embodiment.

[0024] Figure 8 Observed from the positive side of the Y axis Figure 7 Figure 2 shows a chamfer removal device.

[0025] Fig.9A It is along Figure 7 It is a cross-sectional view taken along the IX-IX line and is a cross-sectional view showing the open position of the upper cover.

[0026] Fig. 9B It is along Figure 7 It is a cross-sectional view taken along the IX-IX ray and is a cross-sectional view showing the blocking position of the upper cover.

[0027] Fig.10 It is a side view showing an example of a lower cup and a discharge pipe.

[0028] Fig.11 This is a cross-sectional view showing an example of the flow of gas formed around the outer periphery of the superimposed substrates during processing.

[0029] Fig.12 This is a diagram showing the components of a control unit according to one embodiment in the form of functional blocks.

[0030] Fig.13 yes Fig. 9B An enlarged view of the processing unit is shown.

[0031] Fig.14A It is a top view showing a pressing portion according to one embodiment.

[0032] Fig. 14B It is along Fig.14A Cross-sectional view of the XIVB-XIVB line.

[0033] Fig.15 This is a plan view showing an example of a range in contact with the blade on the outer periphery of the superimposed substrate.

[0034] Fig.16 This is a cross-sectional view showing a state where the levelness is measured by a measuring device according to one embodiment.

[0035] Fig.17 This is a cross-sectional view showing a state where the height is measured by a measuring device according to one embodiment.

[0036] Fig.18 Yes means Figure 6 Cross-sectional view of a variation of the chamfer removal and thinning shown. DETAILED DESCRIPTION

[0037] Hereinafter, the embodiments of the present disclosure will be described with reference to the accompanying drawings. In addition, the same reference numerals are used for the same or corresponding structures in the drawings, and the description is sometimes omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are mutually perpendicular directions. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0038] Figure 1 1 is a top view of a thinning system according to an embodiment. The thinning system 1 thins a processing substrate 100. In addition, the thinning system 1 removes a chamfer 104 of the processing substrate 100 before thinning the processing substrate 100. The chamfer 104 is a portion on which a chamfering process is performed. Figure 2 The portion in the figure is the portion subjected to R chamfering processing, and may be the portion subjected to C chamfering processing.

[0039] Figure 2 1 is a cross-sectional view showing a processing substrate, a device layer, and a supporting substrate according to an embodiment. The processing substrate 100 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. A device layer 110 is pre-formed on one side of the processing substrate 100. The device layer 110 is, for example, an electronic circuit. Hereinafter, the main surface of the processing substrate 100 on which the device layer 110 is formed is also referred to as the first main surface 101. In addition, the main surface facing opposite to the first main surface 101 is also referred to as the second main surface 102. The second main surface 102 is close to the first main surface 101 due to the thinning of the processing substrate 100.

[0040] An oxide layer 120 is formed on the surface of the device layer 110 on the side opposite to the processing substrate 100. The oxide layer 120 is formed to have a diameter smaller than that of the processing substrate 100 so as to smoothly remove the chamfer 104 of the processing substrate 100. The oxide layer 120 is, for example, a silicon oxide layer. The silicon oxide layer is formed of, for example, tetraethyl orthosilicate (TEOS).

[0041] The support substrate 130 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, similarly to the processing substrate 100. The support substrate 130 is bonded to the processing substrate 100 via the device layer 110. An oxide layer 140 is formed on the surface of the support substrate 130 opposite to the device layer 110. The oxide layer 140 is formed similarly to the oxide layer 120. In addition, a device layer (not shown) may be formed between the oxide layer 140 and the support substrate 130.

[0042] The superposed substrate 150 includes a processing substrate 100, a device layer 110, two oxide layers 120, 140, and a support substrate 130. The two oxide layers 120, 140 are bonded by heat treatment. In addition, the superposed substrate 150 may include only one of the two oxide layers 120, 140.

[0043] like Figure 1 As shown, the thinning system 1 includes a feeding station 2, a first processing station 3, a second processing station 6, and a control device 9. The feeding station 2, the first processing station 3, and the second processing station 6 are arranged in order from the negative side in the X-axis direction to the positive side in the X-axis direction.

[0044] The feeding and unloading station 2 includes a plurality of loading sections 21. The plurality of loading sections 21 are arranged in a row in the Y-axis direction. Cassettes CS are respectively placed on the plurality of loading sections 21. Cassettes CS store a plurality of superimposed substrates 150 at intervals in the vertical direction. In addition, the number of loading sections 21 is not particularly limited. Similarly, the number of cassettes CS is not particularly limited.

[0045] In addition, the delivery station 2 includes a conveyor 23. The conveyor 23 is arranged next to the plurality of placement sections 21, for example, on the positive side of the X-axis direction thereof. In addition, the conveyor 23 is arranged next to the interface 26, for example, on the negative side of the X-axis direction of the interface 26. The conveyor 23 is provided with a conveying device 24 inside.

[0046] The conveying device 24 includes a holding portion for holding the superimposed substrate 150. The holding portion can move in the horizontal direction (two directions of the X-axis direction and the Y-axis direction) and the vertical direction and rotate around the vertical axis. The conveying device 24 conveys the superimposed substrate 150 between the plurality of cassettes CS placed on the plurality of placement portions 21 and the delivery portion 26.

[0047] In addition, the delivery station 2 is provided with a delivery section 26. The delivery section 26 is arranged beside the conveying section 23, for example, on the positive side of the conveying section 23 in the X-axis direction. In addition, the delivery section 26 is arranged beside the first processing station 3, for example, on the negative side of the first processing station 3 in the X-axis direction. The delivery section 26 has a transition device 27. The transition device 27 temporarily stores the overlapped substrate 150. A plurality of transition devices 27 may also be stacked in the vertical direction. The arrangement and number of the transition devices 27 are not particularly limited.

[0048] The first processing station 3 includes a processing block 4. The processing block 4 includes a laser processing device 41, a cleaning device 42, and an etching device 43. Figure 4A As shown, the laser processing device 41 forms a focal point P of the laser beam LB inside the processing substrate 100, and forms a first modified layer M1, a second modified layer M2, and a third modified layer M3 at the focal point P. The cleaning device 42 cleans the second main surface 102 of the thinned processing substrate 100. The etching device 43 etches the second main surface 102 of the thinned processing substrate 100. In addition, the arrangement and number of the various devices constituting the processing block 4 are not limited to Figure 1 Configuration and quantity shown.

[0049] The first processing station 3 includes a conveyor 5. The conveyor 5 is arranged beside the transition device 27 of the in-and-out station 2, for example, on the positive side of the transition device 27 in the X-axis direction. In addition, the conveyor 5 is arranged beside the processing block 4, for example, on the positive side of the Y-axis direction of the processing block 4. Furthermore, the conveyor 5 is arranged beside the second processing station 6, for example, on the negative side of the X-axis direction of the second processing station 6. The conveyor 5 is provided with a first conveyor 51 inside.

[0050] The first conveyor device 51 includes a holding portion for holding the overlapped substrate 150. The holding portion can move in the horizontal direction (two directions of the X-axis direction and the Y-axis direction) and the vertical direction, and can rotate around the vertical axis. The first conveyor device 51 conveys the overlapped substrate 150 to the transition device 27 of the delivery station 2, the processing block 4 of the first processing station 3, and the chamfer removal device 61 of the second processing station 6.

[0051] The second processing station 6 includes a chamfering device 61 and a thinning device 62. The chamfering device 61 is as shown in FIG. Figure 5 As shown in the figure, an external force is applied to the processing substrate 100, so that the first crack C1 formed with the first modified layer M1 as the starting point and the second crack C2 formed with the second modified layer M2 as the starting point extend, and the chamfer 104 of the processing substrate 100 is removed. Figure 6As shown, an external force is applied to the processing substrate 100, so that the third crack C3 formed with the third modified layer M3 as the starting point is extended, and the processing substrate 100 is thinned. The thinning device 62 includes, for example, a second conveying device 63 and a grinding device 64. The second conveying device 63 conveys the superimposed substrate 150 from the chamfer removal device 61 to the grinding device 64. The grinding device 64 grinds the second main surface 102 of the thinned processing substrate 100 to further thin the processing substrate 100. The thinned processing substrate 100 is conveyed by the second conveying device 63 to the cleaning device 42. In addition, the configuration and number of various devices in the second processing station 6 are not limited to. Figure 1 For example, the thinning device 62 may be provided independently of the second transport device 63 .

[0052] The control device 9 is, for example, a computer. Figure 1 As shown, the thinning system 1 is provided with a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs for controlling various processes executed in the thinning system 1. The control device 9 controls the operation of the thinning system 1 by causing the CPU 91 to execute the programs stored in the storage medium 92. In addition, the control device 9 is provided with an input interface 93 and an output interface 94. The control device 9 receives signals from the outside using the input interface 93 and sends signals to the outside using the output interface 94.

[0053] The above-mentioned program is stored in a storage medium readable by a computer, for example, and is loaded from the storage medium to the storage medium 92 of the control device 9. Examples of the storage medium readable by a computer include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, etc. In addition, the program can also be downloaded from a server via the Internet and loaded into the storage medium 92 of the control device 9.

[0054] Figure 3 FIG. 1 is a flow chart showing a thinning method according to an embodiment of the present invention. The thinning method includes, for example, Figure 3 The processes S101 to S107 are shown. These processes S101 to S107 are executed under the control of the control device 9.

[0055] First, the transport device 24 takes out the superimposed substrate 150 from the cassette CS placed on the placement section 21 and transports it to the transfer device 27. Next, the first transport device 51 receives the superimposed substrate 150 from the transfer device 27 and transports it to the laser processing device 41.

[0056] Next, the laser processing device 41 performs laser processing on the processing substrate 100 ( Figure 3 S101). The laser processing device 41 is as follows Figure 4AAs shown, a focal point P of the laser beam LB is formed inside the processing substrate 100 from the side opposite to the device layer 110 (for example, the upper side) with respect to the processing substrate 100, and a modified layer is formed at the focal point P. The laser beam LB is pulsed, and a plurality of modified layers are formed at intervals.

[0057] When the processing substrate 100 is single crystal silicon, infrared light is used as the laser light LB. Infrared light has a high transmittance to single crystal silicon, and an amorphous silicon layer is formed as a modified layer at the infrared light focusing point P. The modified layer becomes the starting point for dividing the processing substrate 100. The division of the processing substrate 100 is performed by applying stress.

[0058] Figure 4A Yes means Figure 3 A cross-sectional view of an example of laser processing is shown. Figure 4B Yes means Figure 4A A top view showing the positions of the first dividing plane and the second dividing plane.

[0059] The laser processing device 41 forms the first modified layer M1 on the first divided surface D1 of the processed substrate 100 along the radial direction. Figure 4B As shown in FIG. 1 , the first modified layer M1 is a concentric circumferential surface with the outer circumference 103 of the processing substrate 100. Figure 4A As shown, a plurality of the first cracks C1 are formed at intervals in the circumferential direction of the processed substrate 100 and in the thickness direction of the processed substrate 100. When the first modified layer M1 is formed, the first cracks C1 connecting the first modified layers M1 to each other are generated. The first cracks C1 are preferably formed so as to reach the first main surface 101 and not reach the second main surface 102.

[0060] The first dividing surface D1 is arranged radially inward of the chamfer 104 of the processed substrate 100. The chamfer 104 can be removed by removing the peripheral edge portion 105 radially outward of the first dividing surface D1. The processed substrate 100 can be thinned after the chamfer 104 is removed, and the generation of the so-called knife edge 106 can be prevented.

[0061] In addition, the laser processing device 41 is as follows Figure 4B As shown in FIG. 1 , the second modified layer M2 is formed on a plurality of second divided surfaces D2 extending radially from the first divided surface D1 to the outer periphery 103 of the processing substrate 100. Figure 4A As shown in FIG. 1 , a plurality of second split faces D2 are formed at intervals in the radial direction and the thickness direction of the processing substrate 100. When the second modified layer M2 is formed, second cracks C2 are generated to connect the second modified layers M2 to each other. The number of second split faces D2 is Figure 4BAs long as the number of the second dividing faces D2 is two or more, the annular peripheral edge portion 105 can be divided into a plurality of arc-shaped scraps (Japanese: end materials) 107 and removed.

[0062] Furthermore, the laser processing device 41 is as follows Figure 4A As shown, the third modified layer M3 is formed on the third dividing surface D3 that divides the processing substrate 100 along the thickness direction. The third dividing surface D3 is a flat surface parallel to the first main surface 101 and the second main surface 102 of the processing substrate 100. A plurality of third modified layers M3 are formed in a manner spaced apart in the circumferential direction and radial direction of the processing substrate 100, and are arranged in a concentric circle shape. In addition, a plurality of third modified layers M3 can also be arranged in a spiral shape. When the third modified layer M3 is formed, a third crack C3 that connects the third modified layers M3 to each other is generated.

[0063] In addition, the formation order of the first modified layer M1, the second modified layer M2, and the third modified layer M3 is not particularly limited. After forming the first modified layer M1, the second modified layer M2, and the third modified layer M3, the first conveying device 51 receives the superimposed substrate 150 from the laser processing device 41 and conveys the superimposed substrate 150 to the chamfer removal device 61.

[0064] Figure 5 Yes means Figure 3 A cross-sectional view of an example of chamfer removal is shown. Figure 5 As shown, the chamfer removal device 61 uses a blade 160 as a processing tool to apply external force to the processing substrate 100. The blade 160 is inserted between the processing substrate 100 and the support substrate 130, rather than cutting the processing substrate 100. Due to the insertion of the blade 160, the first crack C1 formed with the first modified layer M1 as the starting point and the second crack C2 formed with the second modified layer M2 as the starting point extend, and the chamfer 104 ( Figure 3 S102). Due to the removal of the chamfer 104, the processing substrate 100 is reduced in the radial direction. The outer periphery 103 of the processing substrate 100 reduced in the radial direction is consistent with the first dividing surface D1. In addition, as a processing tool, a blade 160 is used in this embodiment, but a roller can also be used instead of the blade. In this embodiment, the processing tool is pressed against the outer periphery of the processing substrate 100 from the side of the processing substrate 100, but it can also be pressed against the outer periphery of the processing substrate 100 from the top of the processing substrate 100.

[0065] Next, the chamfer removal device 61 takes an image of the outer periphery 103 of the processing substrate 100 ( Figure 3 S103), performing image processing on the captured image ( Figure 3S104). The completion of the removal of the chamfer 104 can be confirmed by image processing. In addition, it can be confirmed by image processing whether the third crack C3 reaches the outer periphery 103 of the processed substrate 100, that is, the first dividing surface D1. Afterwards, the second conveying device 63 receives the superimposed substrate 150 from the chamfer removal device 61 and conveys it to the grinding device 64.

[0066] For example, Figure 1 As shown, the grinding device 64 includes a rotating table 641, two chucks 642, and a processing unit 643. The number and arrangement of the chucks 642 are not particularly limited. The number and arrangement of the processing units 643 are not particularly limited either.

[0067] The rotating table 641 rotates about a vertical rotation center line Z1. Two chucks 642 are arranged across the rotation center line Z1 of the rotating table 641. The two chucks 642 rotate together with the rotating table 641 and move alternately to the carrying-in / carrying-out position A0 and the grinding position A1.

[0068] The carrying position A0 is used as both a carrying position for carrying in the superimposed substrate 150 by the second conveyor 63 and a carrying position for carrying out the superimposed substrate 150 by the second conveyor 63. On the other hand, the grinding position A1 is a position where the processing unit 643 grinds the processed substrate 100.

[0069] Figure 6 Yes means Figure 3 The grinding device 64 and the second conveying device 63 are at the feeding and unfeeding position A0 as shown in FIG. Figure 6 As shown in the figure, the processing substrate 100 is divided at the third dividing surface D3, so that the processing substrate 100 is thinned ( Figure 3 The thinning device 62 includes the second conveying device 63 and the grinding device 64 as described above.

[0070] In a state where the second transport device 63 holds the processed substrate 100 from above and the grinding device 64 holds the processed substrate 100 from below, the holding portion 631 of the second transport device 63 rises relative to the chuck 642 of the grinding device 64. As a result, the third cracks C3 extend in a planar shape, and adjacent third cracks C3 are connected to each other, so that the processed substrate 100 is divided at the third dividing surface D3.

[0071] The holding portion 631 of the second conveying device 63 may also be raised while rotating around the vertical rotation axis so as to spirally cut the processed substrate 100 at the third dividing surface D3. The chuck 642 of the grinding device 64 may rotate instead of the holding portion 631 of the second conveying device 63. In addition, the holding portion 631 of the second conveying device 63 and the chuck 642 of the grinding device 64 may rotate in opposite directions.

[0072] The device layer 110 is formed on the first main surface 101 of the processed substrate 100 divided by the third dividing surface D3. In addition, the second main surface 102 of the processed substrate 100 divided by the third dividing surface D3 has irregularities generated when the third cracks C3 are connected to each other.

[0073] Next, the grinding device 64 grinds the second main surface 102 of the processed substrate 100. Grinding is a part of thinning. The second main surface 102 of the processed substrate 100 is flattened by grinding. The thickness of the processed substrate 100 after grinding is set to a desired value according to the purpose of the processed substrate 100, etc. The change in the thickness of the processed substrate 100 before and after grinding, that is, the grinding amount, is set in a manner to remove the third modified layer M3 by grinding. After that, the second conveying device 63 receives the superimposed substrate 150 from the grinding device 64 and conveys it to the cleaning device 42.

[0074] Next, the cleaning device 42 cleans the second main surface 102 ( Figure 3 The cleaning method is, for example, scrubbing. By cleaning the second main surface 102, particles generated by thinning can be removed. Afterwards, the first conveying device 51 receives the superimposed substrate 150 from the cleaning device 42 and conveys it to the etching device 43.

[0075] Next, the etching device 43 etches the second main surface 102 ( Figure 3 The etching method is, for example, wet etching. By etching the second main surface 102, the damaged layer caused by thinning can be removed.

[0076] Thereafter, the first transport device 51 receives the superimposed substrate 150 from the etching device 43 and transports it to the transition device 27. Next, the transport device 24 receives the superimposed substrate 150 from the transition device 27 and transports it to the cassette CS placed on the placement section 21. Thereafter, the current process is completed.

[0077] In addition, the order of the above-mentioned processes S101 to S107 is not limited to Figure 3The order shown. For example, the formation of the first modified layer M1 and the second modified layer M2, the division at the first dividing plane D1 and the second dividing plane D2, the formation of the third modified layer M3, and the division at the third dividing plane D3 may be performed in sequence. In addition, it is also possible to perform grinding without performing the formation of the third modified layer M3 and the division at the third dividing plane D3. In other words, it is also possible to perform thinning only by grinding. In addition, thinning may not include grinding, but only include division at the third dividing plane D3.

[0078] Figure 7 1 is a top view showing a chamfering removal device according to one embodiment. Figure 7 In FIG. 1 , hollow arrows indicate the carrying-in direction and the carrying-out direction of the superimposed substrate 150. The carrying-in direction and the carrying-out direction are, for example, perpendicular directions. Figure 8 Observed from the positive side of the Y axis Figure 7 Figure 2 shows a chamfer removal device. Fig.9A It is along Figure 7 It is a cross-sectional view taken along the IX-IX line and is a cross-sectional view showing the open position of the upper cover. Fig. 9B It is along Figure 7 It is a cross-sectional view taken along the IX-IX ray and is a cross-sectional view showing the blocking position of the upper cover.

[0079] The chamfer removal device 61 is a substrate processing device, such as Figure 5 As shown in the figure, the horizontal blade 160 is pressed against the outer periphery of the superimposed substrate 150 to remove the chamfer 104 of the processing substrate 100. The blade 160 is inserted between the processing substrate 100 and the support substrate 130. Hereinafter, the processing performed by the blade 160 is also referred to as "processing". Figure 7 , Figure 8 , Fig.9A as well as Fig. 9B As shown, a base 210 , a chuck 220 , a rotation mechanism 230 , a protection cup 240 , a first storage table 250 , a second storage table 260 , and an internal transport mechanism 270 are provided.

[0080] Base 210 Fig.9A and Fig. 9B As shown, for example, a horizontal plate supports a protection cup 240 via at least one support 211. The protection cup 240 includes a vertical cylindrical barrel 241 and a cover 242 that blocks an opening at the lower end of the barrel 241. A rotation mechanism 230 is accommodated inside the barrel 241 to protect the rotation mechanism 230 from machining chips. The rotation mechanism 230 rotates the chuck 220 around a vertical rotation axis 231.

[0081] Chuck 220 Fig.11As shown, the second main surface 102 of the processing substrate 100 is directed upward and the processing substrate 100 is held horizontally from below. The chuck 220 holds the processing substrate 100 via the support substrate 130. The chuck 220 is, for example, a vacuum chuck, but may also be an electrostatic chuck or a mechanical chuck. The processing substrate 100 is processed while being held by the chuck 220.

[0082] No. 1 storage station 250 Figure 8 As shown in the figure, the first storage table 250 receives and stores the unprocessed superimposed substrate 150 which is sent from the outside by the first transport device 51. The first storage table 250 includes a plurality of first pillars 251 fixed to the base 210 and a first horizontal plate 252 which is supported horizontally by the plurality of first pillars 251. The first pillars 251 can reduce the height difference between the position where the superimposed substrate 150 is stored by the first storage table 250 and the position where the superimposed substrate 150 is held by the chuck 220. As a result, the lifting and lowering action when the superimposed substrate 150 is transported by the internal transport mechanism 270 can be reduced.

[0083] The first storage table 250 has three or more first guide pins 253 for centering the superimposed substrate 150. The three or more first guide pins 253 are arranged at intervals in the circumferential direction of the superimposed substrate 150, and each has a tapered surface that becomes thinner toward the upper side, and the tapered surface is used to center the superimposed substrate 150.

[0084] The first storage table 250 has three or more first support pins 254 for supporting the superimposed substrate 150. The three or more first support pins 254 support the superimposed substrate 150 so that the superimposed substrate 150 centered by the three or more first guide pins 253 floats from the first horizontal plate 252 so that the superimposed substrate 150 does not contact the first horizontal plate 252. A gap is formed between the first horizontal plate 252 and the superimposed substrate 150. In addition, the first storage table 250 may have one first support table for supporting the central portion of the superimposed substrate 150 instead of the three or more first support pins 254.

[0085] The first transport device 51 includes a holding portion 52 for holding the superimposed substrate 150. The holding portion 52 is formed in a forked shape, for example, and holds the superimposed substrate 150 horizontally from below with the second main surface 102 of the processed substrate 100 facing upward. After placing the superimposed substrate 150 on the first storage table 250, the holding portion 52 releases the suction of the superimposed substrate 150, slightly descends, and is pulled out from the gap formed between the superimposed substrate 150 and the first horizontal plate 252.

[0086] In addition, the first supporting pin 254 does not adsorb the overlapping substrate 150 in the present embodiment, but may adsorb the overlapping substrate 150. That is, the first supporting pin 254 may also be an adsorption portion that adsorbs the overlapping substrate 150. Before the first conveying device 51 releases the adsorption of the overlapping substrate 150, the first supporting pin 254 can start adsorbing the overlapping substrate 150, thereby preventing the overlapping substrate 150 from being misaligned during the handover. Compared with the case of using the first guide pin 253, the centering accuracy of the overlapping substrate 150 can be improved. The first supporting platform may also be an adsorption portion instead of the first supporting pin 254.

[0087] The second storage table 260 stores the processed superimposed substrate 150 until it is sent out to the outside by the second conveying device 63. Figure 8 As shown, the second storage table 260 includes: a plurality of second pillars 261 fixed to the first horizontal plate 252 of the first storage table 250; and a second horizontal plate 262 supported horizontally by the plurality of second pillars 261. The first storage table 250 and the second storage table 260 are stacked in the vertical direction, so that the chamfering device 61 can be miniaturized when viewed in the vertical direction. In addition, the arrangement of the first storage table 250 and the arrangement of the second storage table 260 may be opposite, and the first storage table 250 may be arranged on the second storage table 260.

[0088] The second storage table 260 has three or more second guide pins 263 for centering the superimposed substrate 150. The three or more second guide pins 263 are arranged at intervals in the circumferential direction of the superimposed substrate 150, and each has a tapered surface that becomes thinner toward the upper side, and the tapered surface is used to center the superimposed substrate 150.

[0089] The second storage table 260 has three or more second support pins 264 for supporting the superimposed substrate 150. The three or more second support pins 264 support the superimposed substrate 150 so that the superimposed substrate 150 centered by the three or more second guide pins 263 floats from the second horizontal plate 262 so that the superimposed substrate 150 does not contact the second horizontal plate 262. A gap is formed between the second horizontal plate 262 and the superimposed substrate 150. In addition, the second storage table 260 may have one second support table for supporting the central portion of the superimposed substrate 150 instead of the three or more second support pins 264.

[0090] The second conveying device 63 is as follows Figure 6 As shown, there is a holding portion 631 for holding the superimposed substrate 150 horizontally. The holding portion 631 is formed in a disk shape, for example, and sucks the entire upper surface of the superimposed substrate 150 from above. The holding portion 631 receives the superimposed substrate 150 from the second storage table 260, rises while sucking the superimposed substrate 150, and moves to the outside of the chamfer removal device 61.

[0091] Furthermore, as described above, when the thinning device 62 is provided independently of the second transport device 63, the holding portion 631 of the second transport device 63 may be formed into a forked shape similar to the holding portion 52 of the first transport device 51, so that the second main surface 102 of the processed substrate 100 faces upward and the superposed substrate 150 is held horizontally from below. In this case, the holding portion 631 is inserted into the gap formed between the superposed substrate 150 and the second horizontal plate 262, and then rises to receive the superposed substrate 150 from the second storage table 260.

[0092] In addition, the second support pin 264 does not adsorb the overlapping substrate 150 in the present embodiment, but may adsorb the overlapping substrate 150. That is, the second support pin 264 may also be an adsorption portion that adsorbs the overlapping substrate 150. Before the second conveying device 63 releases the adsorption of the overlapping substrate 150, the second support pin 264 can start adsorbing the overlapping substrate 150, thereby preventing the overlapping substrate 150 from being misaligned during the handover. Compared with the case of using the second guide pin 263, the centering accuracy of the overlapping substrate 150 can be improved. The second support table may also be an adsorption portion instead of the second support pin 264.

[0093] The internal transport mechanism 270 transports the superimposed substrate 150 before processing from the first storage table 250 to the chuck 220, and transports the superimposed substrate 150 after processing from the chuck 220 to the second storage table 260. The internal transport mechanism 270 transports the superimposed substrate 150 in and out of the chuck 220, so there is no restriction on setting the chuck 220 within the range reached by the first transport device 51 and the second transport device 63, and the degree of freedom of the setting position of the chuck 220 is high.

[0094] like Figure 7 As shown, the internal transport mechanism 270 includes a rotating arm 271 that rotates about, for example, a vertical rotating axis Z2, and a holding portion 272 attached to the top end of the rotating arm 271. The rotating arm 271 and the holding portion 272 are capable of rotating and being raised and lowered.

[0095] The holding portion 272 holds the superimposed substrate 150 horizontally from above with the second main surface 102 of the processing substrate 100 facing upward. The holding portion 272 and the chuck 220 hold the superimposed substrate 150 from opposite sides to each other, so that when one of them is adsorbing the superimposed substrate 150, the other can adsorb the superimposed substrate 150, which can reduce misalignment during handover.

[0096] The holding portion 272 preferably does not adsorb the entire upper surface of the superimposed substrate 150, but preferably adsorbs, for example, the center of the superimposed substrate 150, so as to be compact so as not to hit the second support column 261 of the second storage table 260 during rotation. The holding portion 272 is formed, for example, in a disk shape, and its diameter is smaller than, for example, the diameter of the superimposed substrate 150. In addition, the first support column 251 and the second support column 261 are arranged at positions that do not hinder the rotation of the rotating arm 271 and the holding portion 272.

[0097] According to the present embodiment, the first storage table 250 and the second storage table 260 are provided, respectively, so that a plurality of overlapped substrates 150 can be stored inside the chamfer removal device 61, and the overlapped substrates 150 before processing can be introduced before the delivery of the processed overlapped substrates 150 is completed. The overlapped substrates 150 before processing can be always prepared inside the chamfer removal device 61, so the number of sheets processed per unit time can be increased.

[0098] In addition, according to the present embodiment, the first storage table 250 and the second storage table 260 are provided separately, so that the unprocessed superimposed substrate 150 can be simultaneously carried out from the outside to the first storage table 250 and the processed superimposed substrate 150 can be simultaneously carried out from the second storage table 260 to the outside. At this time, the first storage table 250 receives the unprocessed superimposed substrate 150 from the first conveying device 51, and the second storage table 260 transfers the processed superimposed substrate 150 to the second conveying device 63. Since a plurality of processes can be carried out simultaneously, the number of sheets processed per unit time can be increased.

[0099] Furthermore, according to the present embodiment, the chuck 220, the first storage table 250, and the second storage table 260 are provided separately, so that the following processes (1) and (2) can also be performed. (1) The unprocessed superimposed substrate 150 is simultaneously introduced into the first storage table 250 from the outside and the processed superimposed substrate 150 is simultaneously transported from the chuck 220 to the second storage table 260. (2) The unprocessed superimposed substrate 150 is simultaneously transported from the first storage table 250 to the chuck 220 and the processed superimposed substrate 150 is simultaneously transported from the second storage table 260 to the outside.

[0100] like Fig.9A and Fig. 9BThe chamfer removal device 61 shown in this way includes a lower cup 280, and the lower cup 280 recovers machining chips dropped from the overlapping substrate 150 within the entire circumference of the outer circumference of the overlapping substrate 150. The machining chips are generated by machining using the blade 160, and include at least one of, for example, scraps 107 and dust. The overlapping substrate 150 rotates together with the chuck 220 during machining, so the machining chips can drop at various rotation angles. The lower cup 280 recovers the machining chips dropped from the overlapping substrate 150 within the entire circumference of the outer circumference of the overlapping substrate 150 as described above, so that the machining chips can be reliably recovered, and the chamfer removal device 61 and the overlapping substrate 150 can be maintained in a clean state.

[0101] The lower cup 280 has a lower cylinder portion 281 that is larger than the superimposed substrate 150 in a plan view. The lower cylinder portion 281 is formed in a cylindrical shape so as to surround the superimposed substrate 150 held by the chuck 220 in a plan view. The lower cylinder portion 281 preferably has a notch 282 for avoiding interference between the lower cylinder portion 281 and the processing unit 330. The diameter of the lower cylinder portion 281 can be reduced, and the lower cup 280 can be miniaturized. The lower cylinder portion 281 is preferably arranged at a position lower than the superimposed substrate 150 to prevent interference with the rotating arm 271 and the holding portion 272.

[0102] The lower cup 280 has a lower cover 283 that blocks the opening of the lower end of the lower cylinder 281. A discharge port 284 for discharging machining chips is formed in the lower cover 283. Since the discharge port 284 is formed, the machining chips can be prevented from accumulating inside the lower cup 280. The lower cover 283 has a discharge port 284 in the center, and has an inclined surface 285 that is inclined downward from the lower cylinder 281 toward the discharge port 284 within the entire circumferential range of the lower cylinder 281. The inclined surface 285 is formed in a cone shape, for example. Compared with the case where the discharge port 284 is provided at one end of the lower cover 283, an inclined surface 285 with the same height difference but a steeper inclination can be formed, which makes it easy for the machining chips to fall. Alternatively, compared with the case where the discharge port 284 is provided at one end of the lower cover 283, an inclined surface 285 with the same inclination but a smaller height difference can be formed, which can reduce the vertical dimension of the lower cover 283.

[0103] Fig.10 : is a side view showing an example of the lower cup and the discharge pipe. The lower cup 280 is formed of a conductive material such as metal, or is formed of an insulating material and coated with an antistatic agent, or is formed of a mixed material of an insulating material and an antistatic agent. The antistatic agent is an agent that prevents the accumulation of static electricity. Under the action of, for example, a surfactant, moisture in the air is adsorbed on the surface of the insulating material to reduce the resistance. It is possible to prevent the lower cup 280 from being charged, and it is possible to suppress machining chips from adhering to the lower cup 280 due to static electricity, and it is possible to suppress machining chips from accumulating inside the lower cup 280. In order to reliably prevent the lower cup 280 from being charged, for example Fig.10 The grounding shown is preferred.

[0104] The chamfer removal device 61 includes a discharge pipe 290, which guides downward the machining chips dropped from the discharge port 284 of the lower cup 280. The machining chips can be guided to a desired position by means of the discharge pipe 290. The discharge pipe 290 is formed of a conductive material similar to the lower cup 280, or is formed of an insulating material and coated with an antistatic agent, or is formed of a mixed material of an insulating material and an antistatic agent. The discharge pipe 290 can be prevented from being charged, the machining chips can be prevented from adhering to the discharge pipe 290 due to static electricity, and the machining chips can be prevented from clogging the inside of the discharge pipe 290. In order to reliably prevent the discharge pipe 290 from being charged, for example Fig.10 The grounding shown is preferred.

[0105] The chamfering removal device 61 includes an aspirator 291, which aspirates the gas inside the discharge pipe 290. The aspirator 291 is, for example, a vacuum pump. An ejector may be used instead of the vacuum pump. The aspirator 291 aspirates the gas inside the discharge pipe 290, so that the machining chips can fall with the flow of the gas, and the clogging of the machining chips can be suppressed. The aspirator 291 may be connected to the chamfering removal device 61, or may not be provided in the chamfering removal device 61.

[0106] The chamfer removal device 61 includes a suction box 292, which is provided in the middle of the suction path of the gas from the exhaust pipe 290 toward the suction device 291. The suction device 291 sucks the inside of the suction box 292 from above. The inside of the suction box 292 is sealed, and an exhaust pipe 293 is installed on the top of the suction box 292. The suction device 291 sucks the gas inside the exhaust pipe 290 with the help of the exhaust pipe 293 and the suction box 292. In the inside of the suction box 292, the gas is lighter, so it is sucked upward against gravity, while the machining chips are heavier, so they fall directly under the action of gravity. The gas and the machining chips can be separated, so the failure of the suction device 291 can be suppressed.

[0107] The chamfer removal device 61 includes a recovery box 294 for recovering machining chips dropped from the discharge pipe 290. The recovery box 294 is disposed, for example, below the suction box 292. The extension pipe 295 guides the machining chips dropped from the discharge pipe 290 to the recovery box 294. The machining chips accumulated in the recovery box 294 are periodically discarded.

[0108] The chamfering removal device 61 is provided with a detector 296 for detecting a poor falling of machining chips. The detector 296 includes, for example, a weight sensor 297, and the weight sensor 297 detects, for example, a weight change of a recovery box 294. If the machining chips are blocked in the middle of falling, the weight increase of the recovery box 294 becomes smaller than the machining amount. In addition, the setting position of the weight sensor 297 is not particularly limited. For example, the weight sensor 297 can also detect a weight change of the lower cup 280. In this case, as the machining chips accumulate on the lower cup 280, the weight of the lower cup 280 becomes heavier.

[0109] An imaging sensor (not shown) may be used as the detector 296. The imaging sensor is provided inside at least one of the lower cup 280, the discharge pipe 290, the suction box 292, the recovery box 294, and the extension pipe 295 to capture the interior. If the machining chips are blocked in the middle of falling, the machining chips are reflected in the image captured by the imaging sensor.

[0110] The detector 296 sends its detection result to the control unit of the chamfer removal device 61. The control unit detects that the machining chips are not falling properly, so it can urge the user to perform maintenance on the chamfer removal device 61. For example, if the control unit detects that the machining chips are not falling properly, it will issue an alarm. The alarm is reported by image or sound. In addition, the detection result of the weight sensor 297 can also be used to urge the user to discard the machining chips that have been accumulated inside the recovery box 294.

[0111] like Figure 8 As shown, the chamfer removal device 61 includes an upper cover 300 and an upper cover moving mechanism 310. The upper cover 300 is in a blocking position (see FIG. 1 ) for blocking at least part of the opening of the upper end of the lower cup 280. Fig. 9B ) and the opening position where the opening of the upper end of the lower cup 280 is opened (refer to Fig.9A ). The upper cover moving mechanism 310 is, for example, a cylinder, which moves the upper cover 300 between the blocking position and the open position. The upper cover 300 is raised and lowered between the blocking position and the open position, so that the superimposed substrate 150 can be sent in and out relative to the chuck 220 and the processing chips can be prevented from flying from the superimposed substrate 150. In addition, the upper cover moving mechanism 310 can also move the upper cover 300 not only in the vertical direction but also in the horizontal direction.

[0112] When the internal conveying mechanism 270 conveys the superimposed substrate 150 before processing from the first storage table 250 to the chuck 220, the upper cover 300 waits at the open position. Figure 8As shown, the upper cover 300 passes between the upper cover 300 and the lower cup 280, and transfers the overlapped substrate 150 to the chuck 220. Thereafter, if the internal conveying mechanism 270 withdraws from between the upper cover 300 and the lower cup 280, the upper cover 300 descends from the open position to the blocked position. Next, while the processing unit 330 processes the overlapped substrate 150 using the blade 160, the upper cover 300 suppresses the scattering of processing chips at the blocked position. If the processing of the overlapped substrate 150 is completed, the upper cover 300 rises from the blocked position to the open position. Thereafter, the internal conveying mechanism 270 passes between the upper cover 300 and the lower cup 280, receives the processed overlapped substrate 150 from the chuck 220, and conveys it to the second storage table 260.

[0113] like Figure 8 As shown, it is preferable that the position where the overlapped substrate 150 is stored by the second storage table 260 is lower than the open position of the upper cover 300. Compared with the case where the positional relationship is reversed, the chamfer removal device 61 can be miniaturized. In the case where the positional relationship is reversed, the overlapped substrate 150 passes between the upper cover 300 and the second storage table 260 and rises further relative to the upper cover 300 and the second storage table 260. In order to enable this rise, the horizontal distance between the upper cover 300 and the second storage table 260 is larger than the diameter of the overlapped substrate 150. According to this embodiment, the horizontal distance between the upper cover 300 and the second storage table 260 can be shortened, and the chamfer removal device 61 can be miniaturized.

[0114] The upper cover 300 has Fig. 9B As shown, the upper cylinder portion 301 surrounds the outer circumference of the overlapping substrate 150 held by the chuck 220. Even in the case where the lower cylinder portion 281 of the lower cup 280 is arranged at a lower position than the overlapping substrate 150, the upper cylinder portion 301 of the upper cover 300 can suppress the lateral scattering of machining chips from the overlapping substrate 150. The upper cylinder portion 301 is formed, for example, in a cylindrical shape, and its diameter is larger than the diameter of the overlapping substrate 150. The upper cylinder portion 301 preferably has a notch 302 for avoiding interference between the upper cylinder portion 301 and the machining unit 330. The diameter of the upper cylinder portion 301 can be reduced, and the upper cover 300 can be miniaturized. The notch 302 is provided with, for example, a blade 160 and a blade mounting portion 331.

[0115] The upper cover 300 has a top portion 303 that covers at least the outer circumference of the superimposed substrate 150 held by the chuck 220 from above. The top portion 303 is formed, for example, in a ring shape. The outer diameter of the top portion 303 is larger than the diameter of the superimposed substrate 150, and the inner diameter of the top portion 303 is smaller than the diameter of the superimposed substrate 150. Alternatively, the top portion 303 may be formed in a disk shape that covers the entire superimposed substrate 150 from above. The top portion 303 covers at least the outer circumference of the superimposed substrate 150 from above, thereby suppressing the scattering of machining chips from the superimposed substrate 150 in an upward direction.

[0116] Fig.11 2 is a cross-sectional view showing an example of the flow of gas formed around the outer periphery of the superimposed substrate during processing. The aspirator 291 sucks the gas inside the exhaust pipe 290 as described above, and therefore also sucks the gas inside the lower cup 280. As a result, the interior of the lower cup 280 becomes negative pressure, so that the gas flows into the interior of the lower cup 280 from the opening of the annular top 303. The gas flows into the interior of the lower cup 280 through the gap formed between the top 303 and the superimposed substrate 150. The gas forms a flow toward the radial outward at the upper surface of the superimposed substrate 150, so that the processing chips can be made to fall from the superimposed substrate 150 to the lower cup 280 by utilizing this flow, and the adhesion of the processing chips to the upper surface of the superimposed substrate 150 can be suppressed.

[0117] Furthermore, in the vicinity of the superposed substrate 150, a flow of gas is also formed due to the rotation of the superposed substrate 150. The gas flows radially outward due to the centrifugal force while being dragged by the superposed substrate 150 and rotating.

[0118] The top portion 303 includes an annular first horizontal portion 304 that forms a gap with the superimposed substrate 150, and an annular second horizontal portion 305 that forms a gap smaller than the gap formed by the first horizontal portion 304 at a position inward of the first horizontal portion 304. By throttling the flow of the gas using the second horizontal portion 305, the flow velocity of the gas can be increased by the same principle as the venturi tube, and the flow of the gas can be enhanced.

[0119] The top portion 303 preferably has an annular first inclined portion 306 connecting the first horizontal portion 304 and the second horizontal portion 305. The first inclined portion 306 is inclined upward as it moves radially outward. The first horizontal portion 304 is preferably disposed directly above the outer circumference of the superimposed substrate 150. In addition, the top portion 303 preferably has an annular second inclined portion 307 connecting the first horizontal portion 304 and the upper tube portion 301. The second inclined portion 307 is inclined downward as it moves radially outward.

[0120] The chamfer removal device 61 preferably has an upper nozzle 308, and the upper nozzle 308 ejects gas from the upper side toward the overlapped substrate 150 in order to form a flow of gas from the outer periphery of the overlapped substrate 150 held by the chuck 220 toward the radially outward side. The gas forms a flow toward the radially outward side at the upper surface of the overlapped substrate 150, and thus, the flow can be utilized to cause the machining chips to fall from the overlapped substrate 150 toward the lower cup 280, and the adhesion of the machining chips to the upper surface of the overlapped substrate 150 can be suppressed. The upper nozzle 308 is formed, for example, in a ring shape, and forms a flow of gas within the entire outer periphery of the overlapped substrate 150. In order to prevent interference between the upper nozzle 308 and the internal conveying mechanism 270, the upper nozzle 308 preferably moves together with the upper cover 300.

[0121] The chamfer removal device 61 preferably has a lower nozzle 309, which ejects gas from the bottom toward the overlapped substrate 150 in order to form a flow of gas from the outer periphery of the overlapped substrate 150 held by the chuck 220 toward the radial outward. The diameter of the substrate holding surface 221 of the chuck 220 is smaller than the diameter of the overlapped substrate 150, and the lower surface of the overlapped substrate 150 protrudes radially outward from the chuck 220 over the entire circumference thereof. The lower nozzle 309 ejects gas from obliquely downward toward the protruding portion. The gas forms a flow toward the radial outward at the lower surface of the overlapped substrate 150, thereby suppressing the adhesion of machining chips to the lower surface of the overlapped substrate 150. The lower nozzle 309 is formed, for example, in a ring shape, and forms a flow of gas within the entire outer periphery of the overlapped substrate 150.

[0122] The lower nozzle 309 is, for example, disposed at the barrel 241 of the protective cup 240, and a gas flow path is formed between the lower nozzle 309 and the inclined surface 222 of the chuck 220, which flows radially outward and upward. Gas is supplied from the gas supply device 311 to the interior of the barrel 241, and the interior of the barrel 241 becomes a positive pressure. The gas inside the barrel 241 is ejected by the lower nozzle 309. Therefore, it is possible to prevent machining chips from entering the interior of the barrel 241, and it is possible to prevent malfunctions of the rotating mechanism 230 disposed inside the barrel 241. In addition, as Fig.9A and Fig. 9B As shown, the protection cup 240 is disposed inside the lower cup 280. The lower cup 280 and the protection cup 240 are preferably supported by the same support column 211.

[0123] like Figure 8 As shown in FIG. 1 , the chamfer removal device 61 includes an imaging sensor 320 for imaging the outer periphery of the superimposed substrate 150 (more specifically, the processed substrate 100) held by the chuck 220. Figure 7 As shown, the chamfer removal device 61 includes a photographing sensor moving mechanism 321 that moves the photographing sensor 320 between a photographing position and a standby position. The photographing position is a position where the photographing sensor 320 photographs the outer periphery of the overlapped substrate 150 between the upper cover 300 and the lower cup 280. The standby position is a position where the photographing sensor 320 stands by outside the lifting and lowering range of the upper cover 300. According to the present embodiment, the processing of the overlapped substrate 150 and the photographing of the overlapped substrate 150 can be performed while the overlapped substrate 150 is held by the same chuck 220. Compared with the case where a chuck for processing and a chuck for photographing are provided separately, the number of times the overlapped substrate 150 is handed over can be reduced, and the misalignment caused by the handover can be suppressed.

[0124] While the processing unit 330 processes the overlapped substrate 150 using the blade 160, the upper cover 300 suppresses the scattering of processing chips at the blocking position. When the overlapped substrate 150 is processed, the imaging sensor 320 waits at the standby position, so that the scattering of processing chips to the imaging sensor 320 can be suppressed, and the failure of the imaging sensor 320 can be suppressed. When the processing of the overlapped substrate 150 is completed, the upper cover 300 rises from the blocking position to the open position. Thereafter, the imaging sensor moving mechanism 321 moves the imaging sensor 320 from the standby position to the imaging position, and the imaging sensor 320 photographs the outer periphery 103 of the processing substrate 100. During this period, the rotating mechanism 230 rotates the processing substrate 100, and the imaging sensor 320 photographs the entire outer periphery 103 of the processing substrate 100. When the photographing is completed, the imaging sensor moving mechanism 321 moves the imaging sensor 320 from the photographing position to the standby position. Next, the internal transport mechanism 270 passes between the upper cover 300 and the lower cup 280 , receives the processed superimposed substrate 150 from the chuck 220 , and transports the superimposed substrate 150 to the second storage table 260 .

[0125] Fig.12 This is a diagram showing the components of the control unit of one embodiment in the form of functional blocks. Fig.12 The functional modules are conceptual and do not necessarily need to be physically configured as shown in the figure. All or part of the functional modules can be functionally or physically dispersed or combined in arbitrary units. All or any part of the processing functions performed by each functional module can be realized by a program executed by the CPU, or can be realized as hardware based on wiring logic. The control unit 500 is a part of the chamfer removal device 61 and is composed of a computer like the control device 9. In addition, the control device 9 can also have the function of the control unit 500.

[0126] The control unit 500 includes a correction unit 501 that performs image processing on the image captured by the imaging sensor 320, obtains the deviation between the rotation center of the chuck 220 and the center of the superimposed substrate 150, and corrects the path of the superimposed substrate 150 transported by the internal transport mechanism 270 so that the deviation becomes smaller next time and thereafter. The center of the superimposed substrate 150 is obtained as, for example, the positions of at least three points of the outer periphery 103 of the processing substrate 100 are measured by image processing, and the center of a circle passing through the measured three points. The path corrected by the correction unit 501 is the path for transporting the superimposed substrate 150 from the first storage table 250 to the chuck 220.

[0127] The correction unit 501 corrects at least one of the starting point and the end point of the path. The starting point of the path is the position where the holding unit 272 of the internal conveying mechanism 270 receives the superimposed substrate 150 from the first storage table 250, that is, the position where the holding unit 272 grabs the superimposed substrate 150. The end point of the path is the position where the holding unit 272 of the internal conveying mechanism 270 transfers the superimposed substrate 150 to the chuck 220, that is, the position where the holding unit 272 releases the superimposed substrate 150.

[0128] The correction unit 501 corrects at least one of the starting point and the end point of the path, thereby reducing the deviation between the rotation center of the chuck 220 and the center of the superimposed substrate 150. The superimposed substrate 150 can be suppressed from shaking when the chuck 220 rotates. If it is assumed that the superimposed substrate 150 shakes, the insertion depth of the blade 160 changes according to the circumferential position of the superimposed substrate 150. The insertion depth of the blade 160 refers to the depth of insertion into the gap between the processing substrate 100 and the supporting substrate 130. If the insertion depth of the blade 160 is too large, the load applied to the blade 160 is too large, and therefore, there is a problem of causing failures such as deformation of the blade 160. In addition, if the insertion depth of the blade 160 is too small, the load applied to the superimposed substrate 150 is too small, and therefore, there is a problem of failure in removing the chamfer 104. According to the present embodiment, the correction unit 501 can suppress the shaking of the superimposed substrate 150, and therefore, these problems can be solved.

[0129] In addition, the control unit 500 preferably includes a command transmission unit 504, which performs image processing on the image captured by the imaging sensor 320, obtains the deviation between the rotation center of the chuck 220 and the center of the superimposed substrate 150, and transmits a command to at least one of the first conveyor 51 and the second conveyor 63. The command transmission unit 504 transmits a command to the first conveyor 51 for correcting the position of the superimposed substrate 150 before processing, which is transferred to the first storage table 250 by the first conveyor 51 so that the deviation is reduced next time and thereafter. In addition, the command transmission unit 504 further obtains the displacement of the superimposed substrate 150 on the second storage table 260 from the deviation, and transmits a command to the second conveyor 63 for correcting the position of the superimposed substrate 150 after processing, which is received by the second conveyor 63 from the second storage table 260 so as to absorb the displacement. The second conveyor 63 can maintain the desired position of the superimposed substrate 150 after processing.

[0130] In addition, the control unit 500 has a determination unit 502, which performs image processing on the image captured by the imaging sensor 320 to determine the quality of the processing result of the overlapped substrate 150. The determination unit 502 obtains the position of the outer periphery 103 of the processed substrate 100 through image processing, and determines whether the outer periphery 103 of the processed substrate 100 as a whole is reduced to the first dividing surface D1. In the case where the outer periphery 103 of the processed substrate 100 as a whole is reduced to the first dividing surface D1, it is determined that the processing result is good. On the other hand, in the case where at least a part of the outer periphery 103 of the processed substrate 100 is not reduced to the first dividing surface D1, it is determined that the processing result is poor. The overlapped substrate 150 with a poor processing result is processed again by changing the processing conditions (for example, the load of the blade 160 during processing) in the chamfer removal device 61 before being provided to the thinning device 62, or is returned to the box CS on the carrier 21 without being provided to the thinning device 62.

[0131] Fig.13 yes Fig. 9B An enlarged view of the processing unit shown. The chamfer removal device 61 includes a processing unit 330, which presses a horizontal blade 160 against the outer periphery of the overlapping substrate 150 to process the overlapping substrate 150 (more specifically, the processing substrate 100). The blade 160 is pressed against the outer periphery of the overlapping substrate 150 and passively rotates as the overlapping substrate 150 rotates. The rotation direction of the blade 160 is opposite to the rotation direction of the overlapping substrate 150, and the rotation speed of the outer periphery of the blade 160 is consistent with the rotation speed of the outer periphery of the overlapping substrate 150. Therefore, it is possible to suppress damage to the overlapping substrate 150 and the blade 160. In addition, the blade 160 can also rotate independently of the overlapping substrate 150.

[0132] For example, Figure 5 As shown, the blade 160 has a horizontal lower disk portion 161, a wedge-shaped blade portion 162, and a horizontal upper disk portion 163 in sequence from the bottom to the top. The blade portion 162 extends radially outward from both the lower disk portion 161 and the upper disk portion 163, and includes a horizontal surface 164 and an inclined surface 165 at its top. The inclined surface 165 is inclined downward as it is directed radially outward. The blade portion 162 contacts the upper surface of the support substrate 130 through the horizontal surface 164, and pushes the portion to be removed (e.g., the scrap 107) of the processing substrate 100 upward through the inclined surface 165. The blade 160 is a consumable, and therefore, it is replaced appropriately.

[0133] Processing unit 330 Fig.13As shown, there is a blade mounting portion 331 for mounting the blade 160. The blade mounting portion 331 has a horizontal mounting surface 332, and a plurality of bolt holes are formed on the mounting surface 332 in a spaced manner. Bolts 333 are respectively screwed into the plurality of bolt holes, and the blade 160 is mounted on the blade mounting portion 331 in a replaceable manner using the bolts 333. A magnet not shown in the figure may also be used instead of the bolt 333. The magnet may also be either a permanent magnet or an electromagnet.

[0134] The blade 160 has a flat surface 166 that is in surface contact with the mounting surface 332 of the machining unit 330. The flat surface 166 is formed in, for example, a recess 167 on the lower surface of the blade 160. The flat surface 166 is in contact with the horizontal surface 164 (see Figure 5 ) are parallel and have a desired height difference, or are arranged on the same surface. No matter which situation, the height of the horizontal plane 164 and the horizontal degree of the horizontal plane 164 can be maintained before and after the replacement of the blade 160.

[0135] The processing unit 330 has a driving unit 340 for advancing and retreating the blade mounting unit 331 in the direction of contact and separation relative to the chuck 220. By advancing and retreating the blade 160, which is lighter than the chuck 220, instead of advancing and retreating the chuck 220, the driving force required for contact and separation between the blade 160 and the superimposed substrate 150 can be reduced.

[0136] The driving unit 340 includes, for example, a rotary motor 341 and a ball screw 342 that converts the rotary motion of the rotary motor 341 into a linear motion. The ball screw 342 includes a screw 343 and a nut 344. The screw 343 is connected to the output shaft of the rotary motor 341 by, for example, a shaft joint 345, and rotates together with the output shaft. On the other hand, the nut 344 advances and retreats by the rotation of the screw 343, and as a result, the blade mounting unit 331 advances and retreats.

[0137] The processing unit 330 includes: a first slider 351 that moves forward and backward by the driving unit 340; a second slider 352 that moves forward and backward following the first slider 351; and an elastic body 353 that connects the first slider 351 and the second slider 352. For example, a coil spring is used as the elastic body 353. The first slider 351 is provided with a nut 344, and the second slider 352 is provided with a blade mounting portion 331. The blade mounting portion 331 moves forward and backward together with the second slider 352. The second slider 352 is arranged in front of the first slider 351.

[0138] If the overlapped substrate 150 before processing is held on the chuck 220, the first slider 351 moves forward from the standby position to the processing position, and the second slider 352 is moved forward by the elastic body 353, so that the blade 160 is pressed against the overlapped substrate 150. The further forward the processing position of the first slider 351 is and the shorter the interval between the first slider 351 and the second slider 352 is, the stronger the elastic restoring force of the elastic body 353 is, and therefore, the load on the blade 160 becomes stronger. During processing, the first slider 351 is stopped at the processing position. After processing, the first slider 351 returns from the processing position to the standby position, and the second slider 352 is moved backward by the elastic body 353, so that the blade 160 is pulled away from the overlapped substrate 150.

[0139] However, if the rotation center of the chuck 220 deviates from the center of the superimposed substrate 150 and an eccentricity occurs, the superimposed substrate 150 will shake when the chuck 220 rotates. The elastic body 353 elastically deforms in the advancing and retreating direction of the blade 160 so as to advance and retreat the blade 160 in a manner that absorbs the shaking of the superimposed substrate 150. According to the present embodiment, the elastic body 353 absorbs the shaking of the superimposed substrate 150, and thus the above-mentioned problem caused by the shaking can be solved.

[0140] In addition, when the elastic body 353 is not present, not only the nut 344 but also the blade mounting portion 331 is provided on the first slider 351. In this case, it is also possible that Fig.12 The processing control unit 503 shown in the figure moves the processing position of the first slider 351 forward and backward so as to move the blade 160 forward and backward in a manner that absorbs the shaking of the superimposed substrate 150 caused by the eccentricity. However, in the case where the elastic body 353 is present, the shaking of the superimposed substrate 150 can be absorbed while the processing position of the first slider 351 is stopped, and the control of the processing control unit 503 can be facilitated.

[0141] The machining unit 330 has a rotation support mechanism 360 that supports the blade mounting portion 331 so as to be free to rotate. The rotation support mechanism 360 has a rotation shaft 361, a bearing box 362, and a bearing Br. The blade mounting portion 331 is fixed relative to the bearing box 362 by means of the vertical rotation shaft 361. The bearing box 362 has a cylindrical portion 363 that holds the outer ring of the bearing Br and a cover portion 364 that blocks the opening at the upper end of the cylindrical portion 363. The rotation shaft 361 is fixed to the cover portion 364. The height adjustment shaft 371 is vertically arranged on the extension line of the rotation shaft 361, and the height adjustment shaft 371 holds the inner ring of the bearing Br. The blade mounting portion 331 is supported by the bearing Br so as to be free to rotate.

[0142] The processing unit 330 has a height adjustment mechanism 370 for adjusting the height of the mounting surface 332 of the blade mounting portion 331 relative to the substrate holding surface 221 of the chuck 220. The height adjustment mechanism 370 includes, for example, a height adjustment shaft 371 and a height adjustment base 372. The height adjustment shaft 371 has a screw 373, and the screw 373 is screwed into a threaded hole formed in the height adjustment base 372. By rotating the height adjustment shaft 371, the height adjustment shaft 371 can be raised and lowered, and the height of the mounting surface 332 of the blade mounting portion 331 can be adjusted. The height adjustment base 372 is fixed relative to the second slider 352, and the blade mounting portion 331 is provided on the second slider 352 by means of the height adjustment mechanism 370 and the rotation support mechanism 360.

[0143] In addition, the structure of the height adjustment mechanism 370 is not particularly limited. For example, the height adjustment mechanism 370 may also have an actuator for raising and lowering the height adjustment shaft 371. For example, a piezoelectric element or the like is used as the actuator. The height adjustment shaft 371 can be automatically raised and lowered by the actuator. The actuator is mounted on the height adjustment base 372.

[0144] The machining unit 330 has a rotation limiting mechanism 380 for limiting the rotation of the blade mounting portion 331. The rotation limiting mechanism 380 has a stopper pin 381 and a pin hole 382 for engaging the stopper pin 381. The pin hole 382 is formed on the outer peripheral surface of the cylindrical portion 363 of the bearing box 362, and moves forward and backward together with the bearing box 362. When the driving unit 340 moves the bearing box 362 backward and the stopper pin 381 engages with the pin hole 382, ​​the rotation of the bearing box 362 is limited, and as a result, the rotation of the blade mounting portion 331 is limited. The blade 160 can be replaced in this state, so the blade 160 can be easily replaced.

[0145] The pin hole 382 rotates together with the bearing box 362, and therefore sometimes deviates from the extension line of the stop pin 381 when the rotation of the bearing box 362 stops. In this state, if the drive unit 340 causes the bearing box 362 to retreat, the bearing box 362 hits the front end of the stop pin 381. The stop pin 381 can move in the forward and backward directions of the bearing box 362, and is urged toward the forward limit position by an elastic body 383 such as a coil spring. If the stop pin 381 is pushed backward by the bearing box 362, the elastic body 383 is elastically deformed to allow the stop pin 381 to retreat. Thereafter, if the bearing box 362 is rotated and the pin hole 382 is arranged on the extension line of the stop pin 381, the stop pin 381 is pushed back to the forward limit position by the elastic restoring force of the elastic body 383 and fits into the pin hole 382.

[0146] Processing unit 330 Fig.9A and Fig. 9BAs shown in the figure, there is a parallelism adjustment mechanism 390 for adjusting the parallelism of the mounting surface 332 of the blade mounting portion 331 with respect to the substrate holding surface 221 of the chuck 220. The parallelism adjustment mechanism 390 is as shown in the figure. Figure 7 As shown, there are a plurality of (eg, three) height adjustment parts 392 for adjusting the heights of different parts of the bottom plate 391 .

[0147] A guide rail Gd is fixed to the bottom plate 391, and the guide rail Gd guides the first slider 351 and the second slider 352. The blade mounting portion 331 is provided on the bottom plate 391 via the guide rail Gd and the second slider 352, etc.

[0148] The height adjustment part 392 is mounted on the upper end of each of the plurality of (eg, three) pillars 212, and the lower end of the pillar 212 is mounted on the base 210. The height of three points of the bottom plate 391 can be adjusted, and the parallelism of the mounting surface 332 of the blade mounting part 331 can be adjusted.

[0149] The height adjustment part 392 is a so-called leveling bolt, and has, for example, a nut 393, a screw rod 394, and a fixing bolt 395. The nut 393 is fixed to the base plate 391. The screw rod 394 is screwed into the threaded hole of the nut 393, inserted into the through hole of the base plate 391, and contacts the upper end surface of the support column 212 in a rotatable manner. A threaded hole is formed in the upper end surface of the support column 212, and the fixing bolt 395 is screwed into the threaded hole. The fixing bolt 395 penetrates the inside of the cylindrical screw rod 394 and is screwed into the threaded hole of the support column 212. The outer diameter of the threaded hole of the support column 212 is smaller than the inner diameter of the cylindrical screw rod 394, and the screw rod 394 contacts the upper end surface of the support column 212 in a rotatable manner.

[0150] When adjusting the height of each point of the bottom plate 391, first, the fixing bolts 395 are loosened, and then the screw rods 394 are rotated to raise and lower the nuts 393. Thereafter, by tightening the fixing bolts 395, the height can be fixed.

[0151] In addition, the height adjustment part 392 may have an actuator instead of the leveling bolt. For example, a piezoelectric element or the like is used as the actuator. The height of each point of the bottom plate 391 can be automatically adjusted by the actuator.

[0152] In addition, the parallelism adjustment mechanism 390 has a height adjustment portion 392, and therefore, can also be used as the height adjustment mechanism 370, but it is preferably provided independently of the height adjustment mechanism 370. The height adjustment mechanism 370 maintains the parallelism adjusted by the parallelism adjustment mechanism 390, and adjusts the height of the mounting surface 332 of the blade mounting portion 331 relative to the substrate holding surface 221 of the chuck 220. Therefore, as long as the height adjustment mechanism 370 and the parallelism adjustment mechanism 390 are provided separately, the number of times of parallelism adjustment, which is relatively difficult, can be reduced.

[0153] like Fig.13 As shown, the processing unit 330 preferably has a processing cover 354 that moves forward and backward together with the second slide 352. The processing cover 354, for example, has a front surface plate 355, an upper surface plate 356, and a pair of left and right side panels 357. The front surface plate 355 is vertically arranged to face the cylindrical portion 241 of the protective cup 240. The upper surface plate 356 has a through hole for the rotation shaft 361 to be arranged. The processing cover 354 has a cylindrical portion 358 extending upward from the edge of the through hole of the upper surface plate 356. The cylindrical portion 358 is arranged inside the skirt 334 of the blade mounting portion 331, and a labyrinth structure is formed between the cylindrical portion 358 and the skirt 334. The processing cover 354 accommodates at least a part of the height adjustment mechanism 370 and the rotation support mechanism 360 therein, and suppresses the scattering of processing chips to them.

[0154] like Fig.13 As shown, the processing unit 330 preferably has a screen 396, which extends upward from the front end of the bottom plate 391 and is used to partition the interior of the processing cover 354. The screen 396 is vertically arranged at a position behind the front surface plate 355 of the processing cover 354 and in front of the guide rail Gd, and a labyrinth structure is formed between the screen 396 and the front surface plate 355. The screen 396 and the front surface plate 355 of the processing cover 354 together suppress the scattering of processing chips to the rotation support mechanism 360, the height adjustment mechanism 370, and the guide rail Gd.

[0155] Fig.14A It is a top view showing a pressing portion according to one embodiment. Fig. 14B It is along Fig.14A The cross-sectional view of the XIVB-XIVB line. Fig.14A and Fig. 14B The chamfer removal device 61 preferably includes a pressing portion 400. The pressing portion 400 presses the scrap 107 pushed from the processing substrate 100 by the blade 160 from above in a manner spaced apart from the blade 160 in the circumferential direction of the processing substrate 100. The scrap 107 is a material in a circular arc shape when viewed from above divided by the first dividing surface D1 and the second dividing surface D2, and includes the chamfer 104. Fig. 14B As shown, the pressing part 400 presses the portion of the substrate 100 that is further rearward than the blade 160 in the rotation direction. The pressing part 400 can push up the scrap 107 at a steep angle, and can promote the division at the second division surface D2.

[0156] The pressing part 400 includes, for example, a ball 401 pressed against the scrap 107 and a support tool 402 supporting the ball 401 so as to be free to rotate. The ball 401 contacts the scrap 107 through the spherical surface, thereby reducing the frictional resistance between the ball 401 and the scrap 107. In addition, the support tool 402 supports the ball 401 so as to be free to rotate, thereby further reducing the frictional resistance between the ball 401 and the scrap 107.

[0157] The pressing part 400 is preferably fixed relative to the upper cover 300, and preferably rises and falls together with the upper cover 300. When the upper cover 300 is lowered to the blocking position, the pressing part 400 is pressed against the scrap 107. The pressing part 400 can also be fixed relative to the upper cover 300 by means of an elastic body such as a coil spring. The elastic body presses the pressing part 400 against the scrap 107 by its elastic restoring force.

[0158] Fig.15 FIG. 1 is a top view showing an example of the range of contact with the blade in the outer periphery of the overlapped substrate. Fig.12 As shown, the control unit 500 includes a processing control unit 503 for controlling the rotation mechanism 230 of the chuck 220 and the processing unit 330. Fig.15 As shown, the processing control unit 503 moves the blade 160 forward and backward so that the circumferential part of the outer periphery of the superimposed substrate 150 (for example, the second dividing surface D2) does not hit the blade 160 while the superimposed substrate 150 and the chuck 220 are rotated together. Fig.15 , reference numeral SP is the contact start point where the blade 160 starts to hit the outer periphery of the superimposed substrate 150, and reference numeral EP is the contact end point where the blade 160 starts to separate from the outer periphery of the superimposed substrate 150. A second dividing surface D2 is disposed between the contact start point SP and the contact end point EP.

[0159] If the superimposed substrate 150 before processing is held on the chuck 220, the imaging sensor moving mechanism 321 moves the imaging sensor 320 from the standby position to the imaging position before the first slider 351 moves from the standby position to the processing position, and the imaging sensor 320 photographs the notch 108 of the processing substrate 100. The notch 108 is used to indicate the crystal orientation of the processing substrate 100, and is formed on the outer periphery 103 of the processing substrate 100. Instead of the notch 108, an orientation plane may be formed on the outer periphery 103 of the processing substrate 100. When the imaging of the notch 108 is completed, the imaging sensor moving mechanism 321 moves the imaging sensor 320 from the imaging position to the standby position.

[0160] The processing control unit 503 performs image processing on the image of the notch 108 captured by the imaging sensor 320, and measures the position of the notch 108. The relationship between the position of the notch 108 and the position of the second dividing surface D2 is pre-stored in the storage medium. The processing control unit 503 refers to the above relationship pre-stored in the storage medium, and detects the position of the second dividing surface D2 based on the measured position of the notch 108.

[0161] The processing control unit 503 moves the blade 160 forward and backward so as to avoid the position of the second dividing surface D2 when the blade 160 is pressed against the outer periphery of the processing substrate 100 while rotating the processing substrate 100. If it is assumed that the blade 160 hits the second dividing surface D2, since the second modified layer M2 is formed on the second dividing surface D2, an impact is generated at this moment. If the impact is large, the following problems may occur. Unexpected cracks are generated, and the scraps 107 fall at unexpected positions. Multiple adjacent scraps 107 are not divided at the second dividing surface D2, but fall directly in a connected state and become blocked. The life of the blade 160 is shortened. According to this embodiment, the processing control unit 503 moves the blade 160 forward and backward in a manner that avoids the position of the second dividing surface D2, so these problems can be solved.

[0162] Fig.16 This is a cross-sectional view showing a state where the levelness is measured by a measuring device according to one embodiment. Fig.17 1 is a cross-sectional view showing a state where a height is measured using a measuring device according to one embodiment. Fig.16 and Fig.17 As shown in FIG. 1 , the processing unit 330 includes a measuring device mounting portion on which the measuring device 410 is mounted. A blade mounting portion 331 is used as the measuring device mounting portion, and the measuring device 410 and the blade 160 are mounted on the same mounting surface 332 of the blade mounting portion 331 by means of bolts 333 or the like in a replaceable manner. As described above, a magnet may be used instead of the bolts 333. Compared with the case where the measuring device mounting portion and the blade mounting portion 331 are separately provided, the processing unit 330 can be miniaturized.

[0163] The measuring device 410 is used to measure at least one of the parallelism and the height (in the present embodiment, both) of the mounting surface 332 of the blade 160 relative to the substrate holding surface 221 of the chuck 220. Compared with the case where the parallelism or the height is measured visually without using the measuring device 410, the parallelism or the height can be adjusted with good accuracy regardless of the proficiency of the operator, and the blade 160 can be properly and easily mounted.

[0164] The measuring device 410 includes, for example, a rotating arm 411 mounted on the mounting surface 332 of the blade mounting portion 331 and a height sensor 412 mounted on one end of the rotating arm 411. The height sensor 412 measures the height of the substrate holding surface 221 of the chuck 220. The height sensor 412 is a contact type in the present embodiment, but may be a non-contact type.

[0165] The rotation support mechanism 360 supports the blade mounting portion 331 so as to be rotatable as described above. If the blade mounting portion 331 is rotated, the rotation arm 411 can be rotated, and the height distribution of the substrate holding surface 221 of the chuck 220 relative to the mounting surface 332 of the blade mounting portion 331 can be measured, and the parallelism can be known based on the height distribution. If the mounting surface 332 is completely parallel to the substrate holding surface 221, even if the rotation angle of the blade mounting portion 331 changes, the measured value of the height sensor 412 does not change.

[0166] As described above, the drive unit 340 moves the blade mounting portion 331 forward and backward in the direction of contact and separation with respect to the chuck 220. If the blade mounting portion 331 is moved forward and backward, the swivel arm 411 can be moved forward and backward, and the height distribution of the substrate holding surface 221 of the chuck 220 relative to the mounting surface 332 of the blade mounting portion 331 can be measured, and the parallelism can be known based on the height distribution. If the mounting surface 332 is completely parallel to the substrate holding surface 221, the measured value of the height sensor 412 does not change even if the blade mounting portion 331 moves forward and backward.

[0167] The operator adjusts the parallelism using the parallelism adjustment mechanism 390 based on the measurement result of the measuring device 410 so that the parallelism of the blade mounting portion 331 with respect to the substrate holding surface 221 of the chuck 220 is within a predetermined allowable range. The parallelism adjustment is preferably performed with the measuring device 410 mounted on the blade mounting portion 331. It is preferably performed repeatedly until the parallelism is within a predetermined allowable range.

[0168] It is preferred to measure the height after the parallelism is adjusted. A height sensor 412 may be used for the height measurement, but a block gauge 413 is used in this embodiment. The block gauge 413 is mounted on the other end of the rotating arm 411. The block gauge 413 has a step 414.

[0169] The height sensor 412 and the block gauge 413 are mounted on the same rotating arm 411. Therefore, after adjusting the parallelism, the operator moves the blade mounting portion 331 from Fig.16 The state shown is reversed to Fig.17In the state shown, the block gauge 413 is directed toward the chuck 220. It can be known whether the height of the substrate holding surface 221 of the chuck 220 is within the range of the step 414 of the block gauge 413, and whether the height of the mounting surface 332 of the blade mounting portion 331 is within the predetermined allowable range. The confirmation is preferably performed visually. In the case where the height of the substrate holding surface 221 is not within the range of the step 414, the operator uses the height adjustment mechanism 370 to adjust the height until it is within the range. The height adjustment is implemented in the state where the measuring device 410 is installed on the blade mounting portion 331.

[0170] After the height is adjusted, the rotation limiting mechanism 380 limits the rotation of the blade mounting portion 331. After that, the measuring device 410 is removed and the blade 160 is installed instead. These operations are performed in a state where the rotation of the blade mounting portion 331 is limited, so the measuring device 410 and the blade 160 can be easily replaced.

[0171] In addition, the height sensor 412 and the block gauge 413 may also be installed in a replaceable manner on the blade mounting portion 331. In addition, the block gauge 413 may not be installed on the blade mounting portion 331, but may be set on the substrate holding surface 221 of the chuck 220, and it is also possible to visually confirm whether the height of the mounting surface 332 of the blade mounting portion 331 is within the range of the step 414 of the block gauge 413.

[0172] The substrate processing device and substrate processing method of the present disclosure are described above, but the present disclosure is not limited to the above-mentioned embodiments, etc. Various changes, corrections, substitutions, additions, deletions and combinations can be made within the scope of the claims. These also naturally belong to the protection scope of the present disclosure.

[0173] In the above embodiment, the chamfer removal device 61 is used as the substrate processing device. The substrate processing device only needs to press the horizontal blade 160 against the outer periphery of the substrate and process the substrate. The use of the substrate processing device is not limited to removing the chamfer 104.

[0174] For example, the substrate processing device may also be Fig.18 Before the chamfering and thinning shown in the figure, the blade 160 is inserted between the processing substrate 100 and the supporting substrate 130 to extend the first crack C1, or both the first crack C1 and the third crack C3. A crack that becomes the starting point of chamfering or chamfering and thinning can be formed before thinning. That is, the substrate processing device can also form a crack that becomes the starting point before simultaneously performing chamfering and thinning of the processing substrate 100. In this case, the dust generated when the crack is formed can also be reliably recovered by the lower cup 280, and the chamfering device 61 and the superimposed substrate 150 can be maintained in a clean state.

[0175] Fig.18 Yes means Figure 6 A cross-sectional view of a modified example of chamfer removal and thinning is shown. Fig.18 In the modified example shown, an external force is applied to the substrate 100 to extend the first crack C1 and the third crack C3. The first modified layer M1 reaches the first main surface 101 through the first crack C1 and does not reach the first main surface 101. Fig.18 The third modified layer M3 is formed in a manner such that the third crack C3 intersects the first dividing surface D1 and does not reach the outer periphery 103. The first modified layer M1 and the third modified layer M3 are formed by the laser processing device 41. However, the second modified layer M2 is not formed. Figure 6 In the thinning device 62 shown in FIG. Fig.18 As shown, chamfer removal and thinning are performed simultaneously.

[0176] In addition, the substrate processing apparatus may form a crack that becomes a starting point for separating the superposed substrate 150 into the processing substrate 100 and the support substrate 130. In this case, the processing substrate 100 and the support substrate 130 may be bonded together using an adhesive or the like.

[0177] The processing substrate 100 is not limited to a silicon wafer. The processing substrate 100 may be, for example, a silicon carbide wafer, a gallium nitride wafer, a gallium oxide wafer, etc. In addition, the processing substrate 100 may be a glass substrate. The same applies to the support substrate 130.

[0178] This application claims priority based on Japanese Patent Application No. 2019-104802 filed with the Japan Patent Office on June 4, 2019, and the entire contents of Japanese Patent Application No. 2019-104802 are hereby incorporated by reference into this application.

[0179] Description of Reference Numerals

[0180] 51. First conveying device; 61. Chamfering removal device (substrate processing device); 63. Second conveying device; 100. Processing substrate (first substrate); 107. Scrap (processing chips); 130. Support substrate (second substrate); 150. Overlapping substrate; 160. Blade (processing tool); 220. Chuck; 221. Substrate holding surface; 230. Rotating mechanism; 250. First storage platform; 260. Second storage platform; 270. Internal conveying mechanism; 280. Lower cup; 281. Lower cylinder; 282. Notch; 283. Lower cover; 284. Discharge port; 290. Discharge pipe; 291. Suction device; 292. Suction box; 296 , detector; 300, upper cover; 301, upper cylinder; 302, notch; 303, top; 304, first horizontal part; 330, processing unit; 331, blade mounting part (processing tool mounting part, measuring instrument mounting part); 332, mounting surface; 340, driving part; 351, first slider; 352, second slider; 353, elastic body; 360, rotation support mechanism; 370, height adjustment mechanism; 380, rotation limiting mechanism; 390, parallelism adjustment mechanism; 391, bottom plate; 392, height adjustment part; 501, correction part; 502, determination part; 503, processing control part; 504, instruction sending part; Gd, guide rail.

Claims

1. A substrate processing device comprising: a chuck that holds the substrate horizontally; a processing unit that presses a processing tool against the outer periphery of the substrate held by the chuck to process the substrate; and a lower cup for collecting machining chips dropped from the substrate within the entire periphery of the substrate, The lower cup is provided with a discharge port for discharging the machining chips. The lower cup includes a lower tube portion that is larger than the base plate in a plan view and a lower cover portion that closes an opening at a lower end of the lower tube portion. The discharge port is formed in the lower cover portion, The lower cylinder includes a notch to avoid interference between the lower cylinder and the processing unit. The machining unit includes: a machining tool mounting portion on which the machining tool is mounted; and a driving portion that moves the machining tool mounting portion forward and backward in a direction of contacting with and separating from the chuck from the side.

2. The substrate processing device according to claim 1, wherein: The substrate processing device includes a rotating mechanism for rotating the chuck around a vertical axis. The processing unit presses the processing tool against the outer periphery of the substrate rotating together with the chuck.

3. The substrate processing device according to claim 1, wherein: The lower cover portion has the discharge port at the center, and has an inclined surface that inclines downward from the lower tube portion toward the discharge port over the entire circumferential direction of the lower tube portion.

4. The substrate processing device according to any one of claims 1 to 3, wherein: The lower cup is formed of a conductive material, or formed of an insulating material and coated with an antistatic agent, or formed of a mixed material of an insulating material and an antistatic agent.

5. The substrate processing device according to any one of claims 1 to 3, wherein: The substrate processing device includes a discharge pipe for guiding the processing chips falling from the discharge port of the lower cup downward. The discharge pipe is formed of a conductive material, or formed of an insulating material and coated with an antistatic agent, or formed of a mixed material of an insulating material and an antistatic agent.

6. The substrate processing device according to claim 5, wherein: The substrate processing apparatus includes a suction device for sucking gas inside the exhaust pipe.

7. The substrate processing device according to claim 6, wherein: The substrate processing device includes a suction box provided in the middle of a suction path of gas from the exhaust pipe toward the suction device. The suction device sucks the interior of the suction box from above.

8. The substrate processing device according to any one of claims 1 to 3, wherein: The substrate processing apparatus includes a detector for detecting a falling failure of the processing chips.

9. The substrate processing device according to any one of claims 1 to 3, wherein: The substrate processing device includes an upper cover that is raised and lowered between a blocking position that blocks at least a portion of an opening at an upper end of the lower cup and an opening position that opens the opening at the upper end of the lower cup.

10. The substrate processing device according to claim 9, wherein: The upper cover has an upper cylindrical portion surrounding the outer periphery of the substrate held by the chuck. The upper cylinder portion includes a notch to avoid interference between the upper cylinder portion and the processing unit.

11. The substrate processing device according to claim 9, wherein: The upper cover has a top portion that covers at least the outer periphery of the substrate held by the chuck from above. The top portion includes: an annular first horizontal portion that forms a gap with the substrate held by the chuck; and an annular second horizontal portion that forms a gap smaller than the gap formed by the first horizontal portion at an inner position than the first horizontal portion.

12. The substrate processing device according to any one of claims 1 to 3, wherein: The substrate processing apparatus includes an upper nozzle that ejects gas from above toward the substrate held by the chuck so as to form a flow of gas from the outer periphery of the substrate toward the outside in the radial direction.

13. The substrate processing device according to any one of claims 1 to 3, wherein: The substrate processing apparatus includes a lower nozzle that ejects gas from below toward the substrate held by the chuck so as to form a flow of gas from the outer periphery of the substrate toward the outside in the radial direction.

14. The substrate processing device according to claim 1, wherein: The processing unit comprises: a first slider that moves forward and backward by the driving unit; a second slider that moves forward and backward following the first slider; and an elastic body that connects the first slider and the second slider. The processing tool mounting portion moves together with the second slide block.

15. The substrate processing device according to claim 1 or 14, wherein: The substrate processing device includes a processing control unit that advances and retreats the processing tool while rotating the substrate together with the chuck so that a circumferential portion of the outer periphery of the substrate does not hit the processing tool.

16. The substrate processing device according to any one of claims 1 to 3, wherein: The substrate processing device includes a pressing portion that presses the processing chips pushed from the substrate by the processing tool from above so as to be spaced apart from the processing tool in the circumferential direction of the substrate.

17. The substrate processing device according to claim 1, wherein: The processing tool is a blade that contacts the outer peripheral portion of the substrate, and the blade is arranged in the notch.

18. A substrate processing method, wherein: In this substrate processing method, the substrate processing apparatus according to any one of claims 1 to 17 is used, and the substrate is processed by the processing tool.

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